KR20170050733A - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

According to an embodiment of the present invention, an organic light emitting display device comprises an anode electrode, an organic light emitting layer, a cathode electrode, and an auxiliary electrode connected to the cathode electrode in the same layer as the anode electrode. And a passivation layer includes a signal pad provided on the pad area of a substrate, and a contact hole to expose the upper side of the signal pad and hide the side of the signal pad. The signal pad includes a lower signal pad, a center signal pad, and an upper signal pad. The center signal pad is surrounded by the lower signal pad, the upper signal pad, and the passivation layer. The present invention can prevent the corrosion of a pad electrode.

Description

Technical Field [0001] The present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to an organic light emitting diode display, and more particularly, to a top emission organic light emitting diode display and a method of manufacturing the same.

The organic light emitting diode (OLED) is a self-luminous element having low power consumption, high response speed, high luminous efficiency, high brightness and wide viewing angle.

The organic light emitting diode (OLED) is divided into a top emission type and a bottom emission type according to a transmission direction of light emitted through the organic light emitting diode. In the lower light emitting method, since the circuit element is located between the light emitting layer and the image display surface, the aperture ratio is lowered due to the circuit element. On the other hand, in the upper light emitting method, a circuit element is located between the light emitting layer and the image display surface There is an advantage that the aperture ratio is improved.

1 is a schematic cross-sectional view of a conventional top emission type OLED display.

1, an active layer 11, a gate insulating film 12, a gate electrode 13, an interlayer insulating film 14, and a source electrode 15 are formed in an active area AA on the substrate 10, And a drain electrode 16. A passivation layer 20 and a planarization layer 30 are sequentially formed on the thin film transistor layer T. The passivation layer 20 and the planarization layer 30 are sequentially formed on the thin film transistor layer T. [

On the planarization layer 30, an anode electrode 40 and an auxiliary electrode 50 are formed. The auxiliary electrode 50 serves to reduce the resistance of a cathode electrode 80, which will be described later.

A bank region 60 is formed on the anode electrode 40 and the auxiliary electrode 50 to define a pixel region and an organic light emitting layer 70 is formed in a pixel region defined by the bank 60, A cathode electrode 80 is formed on the organic light emitting layer 70.

In the case of the top emission type, light emitted from the organic light emitting layer 70 passes through the cathode electrode 80. Therefore, the cathode electrode 80 is formed using a transparent conductive material, thereby causing a problem that the resistance of the cathode electrode 80 is increased. In order to reduce the resistance of the cathode electrode 80, the cathode electrode 80 is connected to the auxiliary electrode 50.

The gate insulating film 12 and the interlayer insulating film 14 are formed in a pad area PA on the substrate 10 and a signal pad 90 is formed on the interlayer insulating film 14, The passivation layer 20 is formed on the signal pad 90. The passivation layer 20 is provided with a contact hole, and the signal pad 90 is exposed through the contact hole. A pad electrode 95 is formed on the passivation layer 20. The pad electrode 95 is connected to the signal pad 90 exposed through the contact hole.

Such a conventional top emission type OLED display has the following problems.

Since the pad electrode 95 is formed when the anode electrode 40 is formed, the pad electrode 95 is made of the same material as the anode electrode 40. At this time, the anode electrode 40 is made of a metal such as silver (Ag) having high reflectivity because the light emitted from the organic light emitting layer 70 must be reflected toward the cathode electrode 80. However, metals such as silver, which have excellent reflectivity, have a weak corrosion problem. Since the side surface of the anode electrode 40 is covered by the bank 60 and the top surface of the anode electrode 40 is covered with the organic light emitting layer 70, the problem of corrosion of the anode electrode 40 is prevented . However, since the pad electrode 95 is connected to an external driving unit, the pad electrode 95 is exposed to the outside, thereby causing the pad electrode 95 to corrode.

Particularly, in order to prevent corrosion, the top surface of the pad electrode 95 may be formed of a material having excellent corrosion resistance. In this case, however, corrosion occurring through the side surface of the pad electrode 95 can not be prevented.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an organic light emitting display device of a top emission type capable of preventing corrosion of a pad electrode and a manufacturing method thereof.

According to an aspect of the present invention, there is provided an OLED display including a substrate including an active region and a pad region, an anode electrode provided in an active region of the substrate, A cathode electrode provided on the organic light emitting layer, an auxiliary electrode connected to the cathode electrode in the same layer as the anode electrode, a first bank covering the edge of the anode electrode, and a second bank covering the edge of the auxiliary electrode, And the first bank and the second bank may be spaced apart from each other.

According to another aspect of the present invention, there is provided an organic light emitting display including a substrate, a source electrode and a signal pad, a passivation layer formed on the source electrode and the signal pad, and a planarization layer on the passivation layer, Forming a contact hole for exposing the source electrode to the outside by removing a predetermined region of the passivation layer and the planarization layer; forming a first anode electrode connected to the source electrode and a second anode electrode spaced apart from the first anode electrode, A step of forming a first auxiliary electrode, a step of forming a top electrode covering the top and side surfaces of the first anode electrode and the top and side surfaces of the first auxiliary electrode, Forming a pattern on the passivation layer, removing a predetermined region of the passivation layer using the photoresist pattern as a mask, Forming a contact hole for exposing the arc pad to the outside, dividing the top electrode into a second anode electrode and a second auxiliary electrode using the photoresist pattern as a mask, Forming a bank using a resist pattern; a thermal reflow process for connecting the bank to the planarization layer; forming an organic light emitting layer on the second anode electrode; And then forming a cathode electrode to be connected.

According to the present invention as described above, the following effects can be obtained.

According to an embodiment of the present invention, side surface corrosion of the signal pad can be prevented by forming a signal pad below the passivation layer instead of forming the pad electrode, thereby preventing the side surface of the signal pad from being exposed.

According to an embodiment of the present invention, the signal pad includes a lower signal pad, a central signal pad, and an upper signal pad, and the central signal pad vulnerable to corrosion is divided into the lower signal pad, By being surrounded by the passivation layer, corrosion of the signal pad can be prevented.

According to an embodiment of the present invention, in order to lower the resistance of the cathode electrode, the resistance characteristics of a required auxiliary electrode can be more easily adjusted by forming two auxiliary electrodes of a first auxiliary electrode and a second auxiliary electrode.

According to an embodiment of the present invention, since the contact hole, the bank, and the first bank that expose the signal pad to the outside can be formed together through one mask process, there is an advantage that the number of times of the mask process can be reduced.

1 is a schematic cross-sectional view of a conventional top emission type OLED display.
2 is a cross-sectional view of an OLED display according to an embodiment of the present invention.
3A to 3K are cross-sectional views illustrating a method of manufacturing an OLED display according to an exemplary embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

2 is a cross-sectional view of an OLED display according to an embodiment of the present invention.

2, the organic light emitting display according to an embodiment of the present invention includes an active area (AA) and a pad area (PA area) provided on a substrate 100.

A passivation layer 165, a planarization layer 170, a first anode electrode 180 and a second anode electrode 200, a first passivation layer 165, a second passivation layer 165, The electrode 190 and the second auxiliary electrode 210, the banks 220b and 220c, the partition 230, the organic light emitting layer 240, and the cathode electrode 250 are formed.

The thin film transistor layer T includes an active layer 110, a gate insulating layer 120, a gate electrode 130, an interlayer insulating layer 140, a source electrode 150, and a drain electrode 160.

The active layer 110 is formed on the substrate 100 so as to overlap with the gate electrode 130. The active layer 110 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. Although not shown, a light shielding film may be additionally formed between the substrate 100 and the active layer 110. In this case, external light incident through the lower surface of the substrate 100 is shielded by the light shielding film, The problem that the active layer 110 is damaged by external light can be prevented.

The gate insulating layer 120 is formed on the active layer 110. The gate insulating layer 120 functions to isolate the active layer 110 from the gate electrode 130. The gate insulating layer 120 may be formed of an inorganic insulating material, for example, a silicon oxide layer (SiOx), a silicon nitride layer (SiNX), or a multilayer thereof. However, the gate insulating layer 120 is not limited thereto. The gate insulating layer 120 may extend to the pad region PA.

The gate electrode 130 is formed on the gate insulating layer 120. The gate electrode 130 is formed to overlap the active layer 110 with the gate insulating layer 120 therebetween. The gate electrode 130 may be formed of any one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, And may be a single layer or multiple layers made of these alloys, but it is not necessarily limited thereto.

The interlayer insulating layer 140 is formed on the gate electrode 130. The interlayer insulating layer 140 may be formed of the same inorganic insulating material as the gate insulating layer 120, for example, a silicon oxide layer (SiOX), a silicon nitride layer (SiNX), or a multilayer thereof. However, no. The interlayer insulating layer 140 may extend to the pad region PA.

The source electrode 150 and the drain electrode 160 are formed to face each other on the interlayer insulating layer 140. The first contact hole CH1 exposing the one end region of the active layer 110 and the second contact hole CH1 exposing the other end region of the active layer 110 are formed in the gate insulating layer 120 and the interlayer insulating layer 140, The source electrode 150 is connected to the other end region of the active layer 110 through the second contact hole CH2 and the drain electrode 160 is connected to the first contact hole CH2, (CH1) to the one end region of the active layer (110).

The source electrode 150 may include a lower source electrode 151, a central source electrode 152, and an upper source electrode 153.

The lower source electrode 151 may be formed between the interlayer insulating layer 140 and the central source electrode 152 to improve adhesion between the interlayer insulating layer 140 and the central source electrode 152. [ have. In addition, the lower source electrode 151 may protect the lower surface of the central source electrode 152, thereby preventing the lower surface of the central source electrode 152 from being corroded. Therefore, the degree of oxidation of the lower source electrode 151 may be less than the degree of oxidation of the central source electrode 152. That is, the material of the lower source electrode 151 may be made of a material having higher corrosion resistance than the material of the central source electrode 152. As described above, the lower source electrode 151 serves as an adhesion promoting layer or an anti-corrosion layer, and may be made of an alloy of molybdenum and titanium (MoTi), but is not limited thereto.

The central source electrode 152 is formed between the lower source electrode 151 and the upper source electrode 153. The central source electrode 152 may be made of copper (Cu), which is a metal having a low resistance, but is not limited thereto. The central source electrode 152 may be formed of a metal having a relatively lower resistance than the lower source electrode 151 and the upper source electrode 153. The thickness of the central source electrode 152 may be greater than the thickness of the lower source electrode 151 and the upper source electrode 153 to reduce the total resistance of the source electrode 150. [

The upper source electrode 153 is formed on the upper surface of the central source electrode 152 to prevent the upper surface of the central source electrode 152 from being corroded. Thus, the degree of oxidation of the upper source electrode 153 may be less than the degree of oxidation of the central source electrode 152. That is, the material of the upper source electrode 153 may be made of a material having higher corrosion resistance than the material of the central source electrode 152. The upper source electrode 153 may be made of a transparent conductive material such as ITO, but is not limited thereto.

The drain electrode 160 may include a lower drain electrode 161, a center drain electrode 162, and an upper drain electrode 163, similar to the source electrode 150 described above.

The lower drain electrode 161 is formed between the interlayer insulating layer 140 and the central drain electrode 162 to improve adhesion between the interlayer insulating layer 140 and the center drain electrode 162 Also, the lower surface of the central drain electrode 162 can be prevented from being corroded. Therefore, the degree of oxidation of the lower drain electrode 161 may be lower than the degree of oxidation of the center drain electrode 162. That is, the material forming the lower drain electrode 161 may be made of a material having a higher corrosion resistance than the material forming the center drain electrode 162. As described above, the lower drain electrode 161 may be made of the same molybdenum and titanium alloy (MoTi) as the lower source electrode 151, but is not limited thereto.

The central drain electrode 162 is formed between the lower drain electrode 161 and the upper drain electrode 163 and may be made of the same copper as the central source electrode 152 described above, It is not. The center drain electrode 162 may be made of a metal having a lower resistance than the lower drain electrode 161 and the upper drain electrode 163. The thickness of the center drain electrode 162 may be greater than the thickness of each of the lower drain electrode 161 and the upper drain electrode 163 to reduce the total resistance of the drain electrode 160.

The upper drain electrode 163 is formed on the upper surface of the center drain electrode 162 to prevent the upper surface of the center drain electrode 162 from being corroded. Accordingly, the degree of oxidation of the upper drain electrode 163 may be smaller than the degree of oxidation of the center drain electrode 162. That is, the material of the upper drain electrode 163 may be made of a material having higher corrosion resistance than the material of the central drain electrode 162. The upper drain electrode 163 may be made of a transparent conductive material such as ITO, but is not limited thereto.

The upper drain electrode 163 may be formed of the same material and the same thickness as the upper source electrode 153 and the center drain electrode 162 may be formed of the same material and the same thickness as the central source electrode 152 And the lower drain electrode 161 may be formed of the same material and the same thickness as the lower source electrode 151. In this case, the drain electrode 160 and the source electrode 150 may be formed at the same time There is an advantage that it can be formed.

The structure of the thin film transistor layer T as described above is not limited to the structure shown in the drawings, but may be variously modified in a structure known to those skilled in the art. For example, although the top gate structure in which the gate electrode 130 is formed on the active layer 110 is shown in the drawing, the gate electrode 130 may be formed on the bottom layer of the active layer 110, Or a bottom gate structure.

The passivation layer 165 is formed on the thin film transistor layer T and more specifically on the upper surfaces of the source electrode 150 and the drain electrode 160. The passivation layer 165 functions to protect the thin film transistor layer T. The passivation layer 165 may be formed of an inorganic insulating material such as a silicon oxide film (SiOX) or a silicon nitride film (SiNX). However, the present invention is not limited thereto. The passivation layer 165 may extend to the pad region PA.

The planarization layer 170 is formed on the passivation layer 165. The planarization layer 170 functions to flatten the upper surface of the substrate 100 on which the thin film transistor T is formed. The planarization layer 170 may be formed of an organic insulating material such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. However, the present invention is not limited thereto. The planarization layer 170 may not extend to the pad region PA.

The first anode electrode 180 and the first auxiliary electrode 190 are formed on the planarization layer 170. That is, the first anode 180 and the first auxiliary electrode 190 are formed on the same layer. The third contact hole CH3 exposing the source electrode 150 is formed in the passivation layer 165 and the planarization layer 170. The third contact hole CH3 is formed in the passivation layer 165 and the planarization layer 170, And the first anode electrode 180 are connected to each other.

The first anode electrode 180 may include a first lower anode electrode 181 and a first upper anode electrode 182.

The first lower anode electrode 181 is formed between the planarization layer 170 and the first upper anode electrode 182 to reduce the adhesive force between the planarization layer 170 and the first upper anode electrode 182 It can play a role of promoting. In addition, the first lower anode electrode 181 may protect the lower surface of the first upper anode electrode 182, thereby preventing the lower surface of the first upper anode electrode 182 from being corroded. Accordingly, the degree of oxidation of the first lower anode electrode 181 may be lower than that of the first upper anode electrode 182. That is, the material of the first lower anode 181 may be made of a material having higher corrosion resistance than the material of the first upper anode 182. The first lower anode 181 may be made of an alloy of molybdenum and titanium (MoTi), but it is not limited thereto.

The first upper anode electrode 182 is formed on the upper surface of the first lower anode electrode 181. The first upper anode electrode 182 may be made of copper (Cu) having a low resistance, but is not limited thereto. The first upper anode electrode 182 may be made of a metal having a lower resistance than the first lower anode electrode 181. The thickness of the first upper anode electrode 182 may be greater than the thickness of the first lower anode electrode 181 to reduce the overall resistance of the first anode electrode 180.

The first auxiliary electrode 190 may include a first lower auxiliary electrode 191 and a first upper auxiliary electrode 192 similar to the first anode 180 described above.

The first lower auxiliary electrode 191 is formed between the planarization layer 170 and the first upper auxiliary electrode 192 to improve the adhesive force between the planarization layer 170 and the first upper auxiliary electrode 192 And it is also possible to prevent the lower surface of the first upper auxiliary electrode 192 from being corroded. Accordingly, the degree of oxidation of the first lower auxiliary electrode 191 may be lower than that of the first upper auxiliary electrode 192. That is, the material of the first lower auxiliary electrode 191 may be made of a material having higher corrosion resistance than the material of the first upper auxiliary electrode 192. The first lower auxiliary electrode 191 may be made of the same molybdenum and titanium alloy MoTi as the first lower electrode 181, but is not limited thereto.

The first upper auxiliary electrode 192 is formed on the upper surface of the first lower auxiliary electrode 191 and may be made of the same copper as the first upper anode electrode 182. However, It is not. The thickness of the first upper auxiliary electrode 192 having a relatively low resistance is formed thicker than the thickness of the first lower auxiliary electrode 191 having a relatively high resistance to reduce the total resistance of the first auxiliary electrode 190 desirable.

The first upper auxiliary electrode 192 may be formed of the same material and the same thickness as the first upper anode electrode 182. The first lower auxiliary electrode 191 may be formed of the same material as the first upper auxiliary electrode 182, And the first auxiliary electrode 190 and the first anode 180 may be formed simultaneously through the same process. Referring to FIG.

The second anode electrode 200 is formed on the upper surface of the first anode electrode 180. The second anode 200 is formed to be in contact with the upper surface and the entire side surface of the first anode 180. That is, an additional insulating layer is not formed between the second anode electrode 200 and the first anode electrode 180, thereby omitting the insulating layer and the contact hole forming process. The second anode electrode 200 reflects light emitted from the organic light emitting layer 240 in an upward direction, and thus includes a material having high reflectivity. The second anode 200 may be formed to cover the top and side surfaces of the first anode 180 and prevent the top and sides of the first anode 180 from being corroded. do.

The second anode electrode 200 may include a second lower anode electrode 201, a second central anode electrode 202, and a second upper anode electrode 203.

The second lower anode electrode 201 is formed between the first anode electrode 180 and the second central anode electrode 202. The second lower anode electrode 201 is formed to cover the upper surface and side surfaces of the first anode electrode 180, thereby preventing the first anode electrode 180 from being corroded. The degree of oxidation of the second lower anode electrode 201 may be lower than the degree of oxidation of the first lower anode electrode 181 and the first upper anode electrode 182 constituting the first anode electrode 180 . That is, the material of the second lower anode electrode 201 may be made of a material having higher corrosion resistance than the material of the first lower anode electrode 181 and the first upper anode electrode 182. In addition, the second lower anode electrode 201 protects the lower surface of the second central anode electrode 202, thereby preventing the lower surface of the second central anode electrode 202 from being corroded. Therefore, the degree of oxidation of the second lower anode electrode 201 may be lower than that of the second middle anode electrode 202. [ That is, the material of the second lower anode electrode 201 may be made of a material having higher corrosion resistance than the material of the second central anode electrode 202. The second lower anode electrode 201 may be made of a transparent conductive material such as ITO, but is not limited thereto.

The second central anode electrode 202 is formed between the second lower anode electrode 201 and the second upper anode electrode 203. The second central anode electrode 202 is made of a material having a lower resistance and an excellent reflectivity than the second lower anode electrode 201 and the second upper anode electrode 203. For example, However, the present invention is not limited thereto. The thickness of the second central anode electrode 202 having a relatively low resistance is greater than the thickness of each of the second lower anode electrode 201 and the second upper anode electrode 203, It is possible to reduce the total resistance of the semiconductor device 200, which is desirable.

The second upper anode electrode 203 is formed on the upper surface of the second middle anode electrode 202 to prevent the upper surface of the second middle anode electrode 202 from being corroded. Therefore, the degree of oxidation of the second upper anode electrode 203 may be lower than that of the second central anode electrode 202. That is, the material of the second upper anode electrode 203 may be made of a material having higher corrosion resistance than the material of the second central anode electrode 202. The second upper anode electrode 203 may be made of a transparent conductive material such as ITO, but is not limited thereto.

The second auxiliary electrode 210 is formed on the upper surface of the first auxiliary electrode 190. The second auxiliary electrode 210 is formed on the same layer as the second anode 200 described above. The second auxiliary electrode 210 is formed to be in contact with the upper surface and the entire side surface of the first auxiliary electrode 190. That is, an additional insulating layer is not formed between the second auxiliary electrode 210 and the first auxiliary electrode 190, thereby omitting the insulating layer and the contact hole forming process. The second auxiliary electrode 210 serves to lower the resistance of the cathode electrode 250 together with the first auxiliary electrode 190. According to an embodiment of the present invention, two auxiliary electrodes of a first auxiliary electrode 190 and a second auxiliary electrode 210 are laminated in order to lower the resistance of the cathode electrode 250, The characteristics can be adjusted more easily. More specifically, since the first auxiliary electrode 190 is formed on the same layer as the first anode 180, there is a limit to increase the size of the first auxiliary electrode 190. Therefore, according to an embodiment of the present invention, the resistance of the cathode electrode 150 can be effectively lowered by stacking the second auxiliary electrode 210 on the first auxiliary electrode 190. The second auxiliary electrode 210 is formed to cover the top and side surfaces of the first auxiliary electrode 190 to prevent the top and sides of the first auxiliary electrode 190 from being corroded. do.

The second auxiliary electrode 210 may include a second lower auxiliary electrode 211, a second central auxiliary electrode 212, and a second upper auxiliary electrode 213.

The second lower auxiliary electrode 211 is formed between the first auxiliary electrode 190 and the second center auxiliary electrode 212. The second lower auxiliary electrode 211 is formed to cover the upper surface and side surfaces of the first auxiliary electrode 190, thereby preventing the first auxiliary electrode 190 from being corroded. The oxidation degree of the second lower auxiliary electrode 211 may be lower than the oxidation degree of the first lower auxiliary electrode 191 and the first upper auxiliary electrode 192 constituting the first auxiliary electrode 190 . That is, the material of the second lower auxiliary electrode 211 may be made of a material having higher corrosion resistance than the material of the first lower auxiliary electrode 191 and the first upper auxiliary electrode 192. In addition, the second lower auxiliary electrode 211 protects the lower surface of the second central assist electrode 212, thereby preventing the lower surface of the second central assist electrode 212 from being corroded. Accordingly, the degree of oxidation of the second lower auxiliary electrode 211 may be lower than that of the second central auxiliary electrode 102. That is, the material of the second lower auxiliary electrode 211 may be made of a material having higher corrosion resistance than the material of the second central auxiliary electrode 212. The second lower auxiliary electrode 211 may be made of a transparent conductive material such as ITO, but is not limited thereto.

The second central assist electrode 212 is formed between the second lower auxiliary electrode 211 and the second upper auxiliary electrode 213. The second central assist electrode 212 is formed of a material having a lower resistance and a higher reflectivity than the second lower auxiliary electrode 211 and the second upper auxiliary electrode 213. For example, However, the present invention is not limited thereto. The thickness of the second central assist electrode 212 having a relatively low resistance is greater than the thickness of each of the second lower assist electrode 211 and the second upper assist electrode 213 having a relatively high resistance, The total resistance of the electrode 210 can be reduced.

The second upper auxiliary electrode 213 is formed on the upper surface of the second central auxiliary electrode 212 to prevent the upper surface of the second central auxiliary electrode 212 from being corroded. Therefore, the oxidation degree of the second upper auxiliary electrode 213 may be lower than that of the second auxiliary central electrode 212. That is, the material of the second upper auxiliary electrode 213 may be made of a material having a higher corrosion resistance than the material of the second central auxiliary electrode 212. The second upper auxiliary electrode 213 may be formed of a transparent conductive material such as ITO, but is not limited thereto.

The second upper auxiliary electrode 213 is formed of the same material and thickness as those of the second upper anode electrode 203 and the second central auxiliary electrode 212 is formed to have the same thickness as the second central anode electrode 202 And the second lower auxiliary electrode 211 may be formed of the same material and the same thickness as the second lower anode electrode 201. In this case, 2 anode electrode 200 can be simultaneously formed through the same process.

The banks 220b and 220c are formed on the second anode electrode 200 and the second auxiliary electrode 210, respectively. More specifically, the banks 220b and 220c include a first bank 220b covering an edge of the second anode electrode 200 and a second bank 220c covering an edge of the second auxiliary electrode 210 . The first bank 220b and the second bank 220c are spaced apart from each other.

The first bank 220b is formed on one side and the other side of the second anode electrode 200 while exposing a part of the upper surface of the second anode electrode 200. [ The first bank 220b is formed to overlap the third contact hole CH3 exposing the source electrode 150 in the passivation layer 165 and the planarization layer 170. [ Since the first bank 220b is overlapped with the third contact hole CH3, it is possible to prevent moisture from penetrating into the organic light-emitting layer 240.

In addition, the first bank 220b is formed to expose a part of the upper surface of the second anode electrode 200, thereby securing an area for displaying an image. In addition, since the first bank 220b is formed on one side and the other side of the second anode electrode 200, the side surface of the second central anode electrode 202, which is susceptible to corrosion, is prevented from being exposed to the outside, It is possible to prevent the side surface of the second central anode electrode 202 from being corroded.

The second bank 220c is formed on one side and the other side of the second auxiliary electrode 210 while exposing a part of the upper surface of the second auxiliary electrode 210. [ The second bank 220c is formed to expose a part of the upper surface of the second auxiliary electrode 210 to secure an electrical connection space between the second auxiliary electrode 210 and the cathode electrode 250 . In addition, since the second bank 220c is formed on one side and the other side of the second auxiliary electrode 210, the side surface of the second central auxiliary electrode 212, which is susceptible to corrosion, is prevented from being exposed to the outside, The side surface of the second central assist electrode 212 can be prevented from being corroded.

The second bank 220c is formed between the second anode electrode 200 and the second auxiliary electrode 210 so that the second anode electrode 200 and the second auxiliary electrode 210 are connected to each other Insulated.

The first bank 220b and the second bank 220c may be formed of an organic insulating material such as polyimide resin, acryl resin and benzocyclobutene (BCB) It is not.

As shown in FIG. 2, the first bank 220b and the second bank 220c are spaced apart from each other. The effect of the first bank 220b and the second bank 220c will be described later with reference to FIG.

The barrier rib 230 is formed on the second auxiliary electrode 210. The barrier rib 230 is spaced apart from the second bank 220c by a predetermined distance and is electrically connected to the second auxiliary electrode 210 through a spaced space between the barrier rib 230 and the second bank 220c. And the cathode electrode 250 are electrically connected to each other. The second auxiliary electrode 210 and the cathode electrode 250 may be electrically connected to each other without forming the barrier ribs 230. However, if the barrier rib 230 is formed, the organic light emitting layer 240 can be formed more easily by vapor deposition. This will be described in more detail as follows.

If the barrier rib 230 is not formed, when the organic light emitting layer 240 is deposited to prevent the upper surface of the second auxiliary electrode 210 from being covered with the organic light emitting layer 240, A mask pattern for covering the upper surface of the auxiliary electrode 210 is required. However, when the barrier rib 230 is formed, the upper surface of the barrier rib 230 functions as eaves when the organic luminescent layer 240 is deposited, so that the organic luminescent layer 240 Is not deposited on the second auxiliary electrode 210, so that a mask pattern for covering the upper surface of the second auxiliary electrode 210 is not required. That is, when the upper surface of the partition 230 serving as an eave is configured to cover the spaced space between the partition 230 and the second bank 220c, The light emitting layer 240 does not penetrate into the spaced space between the partition 230 and the banks 220b and 220c so that the second light emitting layer 240 is spaced apart from the partition 230 and the banks 220b and 220c. The auxiliary electrode 210 can be exposed. Particularly, since the organic light emitting layer 240 can be formed through a deposition process having an excellent linearity of a deposition material such as an evaporation process, The organic light emitting layer 240 is not deposited in the spaced space between the two banks 220c.

The width of the upper surface of the partition 230 is greater than the width of the lower surface of the partition 230 so that the upper surface of the partition 230 serves as eaves. The barrier rib 230 may include a lower first barrier rib 231 and an upper second barrier rib 232. The first barrier rib 231 is formed on the upper surface of the second auxiliary electrode 210 and may be formed through the same process using the same material as the wp2 bank 220c. The second barrier ribs 232 are formed on the upper surface of the first barrier ribs 231. The width of the upper surface of the second barrier rib 232 is greater than the width of the lower surface of the second barrier rib 232. The upper surface of the second barrier rib 232 is spaced apart from the barrier rib 230, And 220c, thereby performing an eaves function.

The organic light emitting layer 240 is formed on the second anode 200. The organic light emitting layer 240 includes a hole injecting layer, a hole transporting layer, an emitting layer, an electron transporting layer, and an electron injecting layer. Lt; / RTI > The structure of the organic light emitting layer 240 may be changed into various forms known in the art.

The organic light emitting layer 240 may extend to the upper surfaces of the banks 220b and 220c. However, the organic light emitting layer 240 does not extend to the upper surface of the second auxiliary electrode 210 while covering the upper surface of the second auxiliary electrode 210. When the organic light emitting layer 240 covers the upper surface of the second auxiliary electrode 210, electrical connection between the second auxiliary electrode 210 and the cathode 250 becomes difficult. The organic light emitting layer 240 may be formed by a deposition process without a mask covering the upper surface of the second auxiliary electrode 210. In this case, But also on the upper surface. However, the organic light emitting layer 240 is not formed in the spaces where the banks 220b and 220c are spaced apart.

The cathode 250 is formed on the organic light emitting layer 240. The cathode 250 is formed of a transparent conductive material since it is formed on the surface where light is emitted. Since the cathode electrode 250 is made of a transparent conductive material, the resistance of the cathode electrode 250 is increased and therefore, the cathode electrode 250 is connected to the second auxiliary electrode 210 to reduce the resistance of the cathode electrode 250. That is, the cathode electrode 250 is connected to the second auxiliary electrode 210 through a spaced space between the barrier 230 and the second bank 220c. Since the cathode 250 can be formed by a deposition process such as sputtering in which the linearity of the evaporation material is not favorable, the barrier 230 and the second bank 250, The cathode electrode 250 may be deposited in a spaced-apart space between the first and second electrodes 220c.

Although not shown in the drawing, an encapsulation layer may be additionally formed on the cathode electrode 250 to prevent moisture from penetrating. As the sealing layer, various materials known in the art can be used. Also, although not shown, a color filter may be additionally formed on the cathode electrode 250 for each pixel. In this case, white light may be emitted from the organic light emitting layer 240.

A gate insulating layer 120, an interlayer insulating layer 140, a signal pad 300, and a passivation layer 165 are formed on the pad region PA on the substrate 100.

The gate insulating layer 120 is formed on the substrate 100 and the interlayer insulating layer 140 is formed on the gate insulating layer 120. The gate insulating layer 120 and the interlayer insulating layer 140 extend from the active area AA and are formed on the entire surface of the pad area PA.

The signal pad 300 is formed on the interlayer insulating layer 140. The signal pad 300 may be formed on the same layer as the source electrode 150 and the drain electrode 160 of the active area AA described above. The signal pad 300 is exposed to the outside through a fourth contact hole CH4 provided in the passivation layer 165 and is connected to an external driver.

The signal pad 300 may include a lower signal pad 301, a center signal pad 302, and an upper signal pad 303.

The lower signal pad 301 may be formed between the interlayer insulating layer 140 and the central signal pad 302 to improve the adhesion between the interlayer insulating layer 140 and the central signal pad 302. have. In addition, the lower signal pad 301 may prevent the lower surface of the center signal pad 302 from being corroded. Therefore, the degree of oxidation of the lower signal pad 301 may be less than the degree of oxidation of the central signal pad 302. That is, the material of the lower signal pad 301 may be made of a material having higher corrosion resistance than the material of the central signal pad 302. The lower signal pad 161 may be made of the same molybdenum and titanium alloy (MoTi) as the lower source electrode 151 or the lower drain electrode 161, but is not limited thereto.

The center signal pad 302 is formed between the lower signal pad 301 and the upper signal pad 303. The central signal pad 302 may be made of copper (Cu), which is a metal having a low resistance, but is not limited thereto. The center signal pad 302 may be made of a metal having a lower resistance than the lower signal pad 301 and the upper signal pad 303. In order to reduce the overall resistance of the signal pad 300, The thickness of the signal pad 302 may be greater than the thickness of the lower signal pad 301 and the upper signal pad 303, respectively.

The upper signal pad 303 is formed on the upper surface of the central signal pad 302 to prevent the upper surface of the central signal pad 302 from being corroded. Thus, the degree of oxidation of the upper signal pad 303 may be less than the degree of oxidation of the central signal pad 302. That is, the material of the upper signal pad 303 may be made of a material having higher corrosion resistance than the material of the central signal pad 302. The upper signal pad 303 may be made of a transparent conductive material such as ITO, but is not limited thereto.

According to one embodiment of the present invention, there is an advantage that corrosion of the central signal pad 302 vulnerable to the corrosion can be prevented. That is, the lower surface of the central signal pad 302 can be prevented from being corroded by the lower signal pad 301, and the upper surface of the central signal pad 302 can be prevented from being corroded by the upper signal pad 303. [ And the side surface of the central signal pad 302 can be prevented from being corroded by the passivation layer 165. According to an embodiment of the present invention, the central signal pad 302 vulnerable to corrosion is surrounded by the lower signal pad 301, the upper signal pad 303, and the passivation layer 165 Corrosion can be prevented.

The upper signal pad 303 may be formed of the same material and the same thickness as the upper source electrode 153 and / or the upper drain electrode 163, The lower signal pad 301 may be formed of the same material and the same thickness as the electrode 152 and / or the central drain electrode 162. The lower signal pad 301 may be formed of the lower source electrode 151 and / The signal pad 300 and the source electrode 150 and / or the drain electrode 160 can be formed simultaneously through the same process.

The passivation layer 165 is formed on the signal pad 300. The passivation layer 165 extends from the active region AA. The passivation layer 165 is provided with a fourth contact hole CH4 for exposing a part of the signal pad 300. [ Particularly, since the passivation layer 165 covers the side surface of the signal pad 300, particularly, the side surface of the central signal pad 302, which is susceptible to corrosion, corrosion occurs on the side surface of the signal pad 300 Can be prevented.

FIGS. 3A to 3K are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an embodiment of the present invention, which is related to the method of manufacturing the OLED display of FIG. Therefore, the same reference numerals are assigned to the same components, and redundant description of the repetitive portions in the materials, structures, etc. of the respective components is omitted.

3A, an active layer 110, a gate insulating layer 120, a gate electrode 130, an interlayer insulating layer 140, a source electrode 150, and a drain electrode 160 are formed on a substrate 100, And a signal pad 300 in this order.

More specifically, the active layer 110 is formed on the substrate 100, the gate insulating layer 120 is formed on the active layer 110, the gate insulating layer 120 is formed on the gate insulating layer 120, A gate electrode 130 is formed on the gate insulating layer 140 and the interlayer insulating layer 140 is formed on the gate electrode 130. The gate insulating layer 140 and the gate insulating layer 140 are formed with first contact holes CH1, 2 contact hole CH2 and then the drain electrode 160 and the second contact hole CH2 connected to one end region of the active layer 110 through the first contact hole CH1, The source electrode 150 connected to the other end region of the active layer 110, and the signal pad 300 are formed.

The active layer 110, the gate electrode 130, the source electrode 150 and the drain electrode 160 are formed in the active region AA and the gate insulating layer 120 and the interlayer insulating layer 140 are formed in the active region AA. The signal pad 140 is formed to extend from the active area AA to the pad area PA and the signal pad 300 is formed in the pad area PA. The thin film transistor layer T is formed in the active region AA and the signal pad 300 is formed in the pad region PA.

The source electrode 150 includes a lower source electrode 151, a center source electrode 152 and an upper source electrode 153. The drain electrode 160 includes a lower drain electrode 161, And an upper drain electrode 163. The signal pad 300 includes a lower signal pad 301, a center signal pad 302 and an upper signal pad 303. The source electrode 150, the drain electrode 160, and the signal pad 300 may be formed at the same time by the same patterning process using the same material.

3B, a passivation layer 165 is formed on the source electrode 150, the drain electrode 160, and the signal pad 300, and a passivation layer 165 is formed on the passivation layer 165. Then, Layer 170 is formed. The third contact hole CH3 is formed in a predetermined region of the passivation layer 165 and the planarization layer 170 so that the source electrode 150 is exposed through the third contact hole CH3 .

The passivation layer 165 is formed to extend from the active area AA to the pad area PA and the planarization layer 170 is formed in the active area AA. Since a thin film transistor is not formed in the pad region PA, there is little need to planarize the surface of the pad region PA, and thus the planarization layer 170 may not be formed in the pad region PA.

The passivation layer 165, the planarization layer 170, and the third contact hole CH3 having different patterns may be formed through a single mask process using a half-tone mask. have.

According to an embodiment of the present invention, the signal pad 300 is not exposed to the outside during the process of forming the third contact hole CH3 for exposing the source electrode 150 to the outside. Since the signal pad 300 is connected to an external driving unit, the passivation layer 165 covering the upper surface of the signal pad 300 must be removed. In addition, The step of removing the passivation layer 165 region may be performed simultaneously with the step of forming the third contact hole CH3. However, if the step of removing the passivation layer 165 covering the upper surface of the signal pad 300 is performed simultaneously with the step of forming the third contact hole CH3, The signal pad 300 may be damaged by the etchant used in the pattern formation of the first auxiliary electrode 180 and the first auxiliary electrode 190. Therefore, the signal pad 300 is not exposed to the outside during the process of forming the third contact hole CH3 in order to prevent the signal pad 300 from being damaged by the etchant.

Next, as shown in FIG. 3C, the first anode electrode 180 and the first auxiliary electrode 190 are formed on the planarization layer 170 in the active region AA.

The first anode 180 is formed to be connected to the source electrode 150 through the third contact hole CH3.

The first anode electrode 180 includes a first lower anode electrode 181 and a first upper anode electrode 182. The first auxiliary electrode 190 includes a first lower auxiliary electrode 191, And an upper auxiliary electrode 192.

The first anode 180 and the first auxiliary electrode 190 may be formed of the same material through the same patterning process.

3D, a top electrode 200a composed of a lower top electrode 201a, a middle top electrode 202a and an upper top electrode 203a is formed on the entire surface. That is, the top electrode 200a is formed on the entire surface of the planarization layer 170, the first anode electrode 180, and the first auxiliary electrode 190 of the active region including the passivation layer 165 of the pad region.

The upper surface electrode 200a is patterned to cover the upper surface and side surfaces of the first anode electrode 180 and the first auxiliary electrode 190. At this time, the upper surface electrode 200a is divided into the second anode electrode 200 and the second auxiliary electrode 210 through a subsequent process.

That is, the lower top electrode 201a is finally divided into a second lower anode electrode 201 and a second lower auxiliary electrode 211, and the middle top electrode 202a is finally divided into a second central anode electrode 202 And a second central assist electrode 212. The upper surface electrode 203a is finally divided into a second upper anode electrode 203 and a second upper auxiliary electrode 213. [

Next, as shown in FIG. 3E, a pattern of photoresist 220a is formed on the entire surface except for a part of the active area AA and the pad area PA.

The photoresist pattern 220a includes a region having a relatively thin first thickness t1 and a region having a relatively thick second thickness t2.

The region having the first thickness t1 overlaps with the side portion of the pad region and a central portion of the top electrode 200a overlapping the first anode electrode 180 of the active region and the first auxiliary electrode 190 Corresponds to one central side portion of the top surface electrode. A region having the second thickness t2 corresponds to a region between the regions having the first thickness t1.

 Specifically, the region having the second thickness t2 corresponds to a side portion of the top electrode 200a overlapping the first anode electrode 180 and a side portion of the top electrode overlapped with the first auxiliary electrode 190, In particular, a region having a second thickness t2 is formed at the center of the central portion of the top electrode overlapped with the first auxiliary electrode 190 for forming barrier ribs.

 The photoresist pattern 220a including the region having the first thickness t1 and the region having the second thickness t2 and not being formed in the specific region may be formed by a halftone mask process Can be obtained.

3F, using the photoresist pattern 220a as a mask, the upper surface of the first anode electrode 180 and the upper surface electrodes 200a formed on the upper surface of the first auxiliary electrode 190, 220a are not formed. The upper surface electrode 200a which is not overlapped with the upper surface of the first anode electrode 180 and the upper surface of the first auxiliary electrode 190 is removed so that the upper surface electrode 200a is electrically connected to the second anode electrode 200 and the second auxiliary electrode 190. [ 210).

At the same time, the passivation layer 165 covering the upper surface of the signal pad 300 is removed using the photoresist pattern 220a as a mask to form a fourth contact hole CH4. That is, by forming the fourth contact hole CH4 in the passivation layer 165, the signal pad 300 is exposed to the outside through the fourth contact hole CH4. The signal pad 300 may be connected to an external driver through the fourth contact hole CH4.

When the photoresist pattern 220a is ashing, the photoresist pattern 220a is removed in a region having a relatively thin first thickness t1, and a relatively thick second thickness t2 is removed. The photoresist pattern 220a remains and the banks 220b and 220c and the first bank 231 are formed by the remaining photoresist pattern 220a.

According to one embodiment of the present invention, since the photoresist pattern 220a is divided into the second anode electrode 200 and the second auxiliary electrode 210, the fourth contact hole CH4, the banks 220b and 220c, and the first bank 231 can be formed together. That is, the top electrode 200a is exposed through the space in which the first bank 220b and the second bank 220c are spaced apart from each other, thereby overlapping the exposed top electrode 200a and the pad 300 in the spaced- The top electrode 200a and the passivation layer 165 can be simultaneously removed. Therefore, according to one embodiment of the present invention, there is an advantage in that the number of mask processes can be reduced

Next, as shown in FIG. 3G, the banks 220b and 220c are connected to the planarization layer 170 using a thermal reflow process.

A thermal reflow process is a process of deforming a structure by using a high temperature. The side portions of the banks 220b and 220c are melted by the high temperature, and the bond between the polymer (polymer) of the photoresist 220a is partially broken. As a result, the edge of the photoresist pattern 220a is melted and contracted and connected to the planarization layer 170.

Next, as shown in FIG. 3H, the remaining upper surface electrode 200a of the pad region is removed. That is, the surface where the pad region contacts the planarization layer 170, to remove the top electrode 200a.

3I, a second barrier rib 232 is formed on the first barrier rib 231 to complete the barrier rib 230 including the first barrier rib 231 and the second barrier rib 232 .

The barrier rib 230 is spaced apart from the second bank 220c by a predetermined distance so that a predetermined space is provided between the barrier rib 230 and the second bank 220c.

The width of the upper surface of the second barrier rib 232 is greater than the width of the lower surface of the second barrier rib 232 in order for the upper surface of the barrier rib 230 to function as eaves. In particular, the upper surface of the second bank 232 covers the spaced space between the bank 230 and the second bank 220c on the basis of the front view, thereby forming the organic light emitting layer 240 It is possible to prevent the organic light emitting layer 240 from being deposited in the spaced space between the barrier rib 230 and the second bank 220c.

3J, an organic light emitting layer 240 is formed on the second anode 200. Next, as shown in FIG. The organic light emitting layer 240 may be formed by depositing the deposition material such as an evaporation material having an excellent linearity so that the organic light emitting layer 240 is formed on the banks 220b and 220c, But is not deposited in the spaced space between the barrier ribs 230 and the second bank 220c. That is, since the upper surface of the barrier rib 230 functions as eaves when depositing the organic luminescent layer 240, the organic luminescent layer 240 (FIG. 2) can be formed without a mask pattern covering the upper surface of the second auxiliary electrode 210, The organic light emitting layer 240 may be prevented from being deposited in a spaced space between the barrier rib 230 and the second bank 220c.

Next, as shown in FIG. 3K, a cathode electrode 250 is formed on the organic light emitting layer 240.

The cathode electrode 250 is formed to be connected to the second auxiliary electrode 210 through a spaced space between the barrier 230 and the second bank 220c. The cathode 250 may be formed through a deposition process such as sputtering in which the linearity of the evaporation material is not favorable and thus the barrier 230 and the second The cathode electrode 250 may be deposited in a spaced space between the banks 220c.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100: substrate T: thin film transistor layer
165: passivation layer 170: planarization layer
180: first anode electrode 190: first auxiliary electrode
200: second anode electrode 210: second auxiliary electrode
220: bank 230: partition wall
240: organic light emitting layer 250: cathode electrode
300: signal pad

Claims (13)

A substrate comprising an active region and a pad region;
An anode electrode provided in an active region of the substrate;
An organic light emitting layer provided on the anode electrode;
A cathode electrode provided on the organic light emitting layer;
An auxiliary electrode connected to the cathode electrode and provided in the same layer as the anode electrode; And
A first bank covering an edge of the anode electrode, and a second bank covering an edge of the auxiliary electrode,
Wherein the first bank and the second bank are spaced apart from each other. The method according to claim 1,
A planarization layer having a contact hole below the anode electrode is additionally provided,
And the first bank overlaps with the contact hole. The method according to claim 1,
A signal pad provided in a pad region of the substrate; And
And a passivation layer covering the side surface of the signal pad, the passivation layer including a contact hole to expose an upper surface of the signal pad,
Wherein the signal pad includes a lower signal pad, a center signal pad, and an upper signal pad, and the center signal pad is surrounded by the lower signal pad, the upper signal pad, and the passivation layer. The method of claim 3,
Wherein an oxidation degree of the lower signal pad and the upper signal pad is smaller than an oxidation degree of the central signal pad and a resistance of the center signal pad is lower than a resistance of the lower signal pad and the upper signal pad. The method according to claim 1,
Wherein the auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode covering the top and side surfaces of the first auxiliary electrode. 6. The method of claim 5,
The first auxiliary electrode includes a first lower auxiliary electrode and a first upper auxiliary electrode, and the second auxiliary electrode includes a second lower auxiliary electrode, a second central auxiliary electrode, and a second upper auxiliary electrode Lt; / RTI > The method according to claim 6,
Wherein the oxidation degree of the first lower auxiliary electrode is smaller than the oxidation degree of the first upper auxiliary electrode, the resistance of the first upper auxiliary electrode is lower than the resistance of the first lower auxiliary electrode,
Wherein the degree of oxidation of the second lower auxiliary electrode and the second upper auxiliary electrode is less than the degree of oxidation of the second central auxiliary electrode and the resistance of the second central auxiliary electrode is less than the degree of oxidation of the second lower auxiliary electrode, Electrode is lower than the resistance of the electrode. The method according to claim 1,
And a barrier provided on the auxiliary electrode and spaced apart from the bank,
And the cathode electrode is connected to the auxiliary electrode through a spaced space between the bank and the barrier rib. Forming a source electrode and a signal pad on a substrate;
Forming a passivation layer on the source electrode and the signal pad, forming a planarization layer on the passivation layer, removing a predetermined region of the passivation layer and the planarization layer to expose the source electrode to the outside, ;
Forming a first anode electrode connected to the source electrode and a first auxiliary electrode spaced apart from the first anode electrode;
Forming a top electrode covering the top and side surfaces of the first anode electrode and the top and side surfaces of the first auxiliary electrode;
Forming a photoresist pattern on the upper surface electrode except for a part of the region;
Removing a predetermined region of the passivation layer using the photoresist pattern as a mask to form a contact hole exposing the signal pad to the outside;
Dividing the top electrode into a second anode electrode and a second auxiliary electrode using the photoresist pattern as a mask;
A step of ashing the photoresist pattern to form a bank using the remaining photoresist pattern;
A thermal reflow process to connect the bank to the planarization layer;
A step of forming an organic light emitting layer on the second anode electrode,
And forming a cathode electrode connected to the second auxiliary electrode on the organic light emitting layer. 10. The method of claim 9,
Wherein the photoresist pattern comprises a region having a relatively thick first thickness and a region having a relatively thin second thickness. 9. The method of claim 9,
Wherein the remaining photoresist pattern by ashing the photoresist pattern corresponds to a region having the second thickness. 10. The method of claim 9,
Wherein the step of forming the bank includes a step of forming a first bank that is spaced apart from the bank using the remaining photoresist pattern. 13. The method of claim 12,
A second barrier rib is formed on the first barrier rib to form barrier ribs including the first barrier rib and the second barrier rib,
Wherein the organic light emitting layer is not deposited in a spaced space between the bank and the barrier ribs, and the cathode electrode is deposited in a spaced space between the bank and the barrier ribs.

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