KR102520874B1 - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

The present invention is connected to a substrate including an active region and a pad region, an anode electrode provided in the active region of the substrate, an organic light emitting layer provided on the anode electrode, a cathode electrode provided on the organic light emitting layer, and the cathode electrode. An auxiliary electrode provided on the same layer as the anode electrode, wherein the anode electrode includes a first anode electrode and a second anode electrode provided on an upper surface of the first anode electrode, and the width of the first anode electrode is An organic light emitting diode display having a width greater than the width of the second anode electrode is provided.

Description

Organic light emitting display device and manufacturing method thereof

The present invention relates to an organic light emitting display device, and more particularly, to a top emission type organic light emitting display device and a manufacturing method thereof.

An organic light emitting display (OLED) is a self-light emitting device and has low power consumption, high speed response speed, high luminous efficiency, high luminance, and wide viewing angle.

The organic light emitting display device (OLED) is divided into a top emission type and a bottom emission type according to a transmission direction of light emitted through the organic light emitting element. The bottom emission method has a disadvantage in that the aperture ratio is lowered due to the circuit element because the circuit element is located between the light emitting layer and the image display surface, whereas the top emission method has no circuit element located between the light emitting layer and the image display surface. Therefore, there is an advantage in that the aperture ratio is improved.

1 is a schematic cross-sectional view of a conventional top emission type organic light emitting display device.

As can be seen in FIG. 1 , the active layer 11, the gate insulating film 12, the gate electrode 13, the interlayer insulating film 14, and the source electrode 15 are formed in the active area (AA) on the substrate 10. And a thin film transistor layer (T) including a drain electrode 16 is formed, and a passivation layer 20 and a planarization layer 30 are sequentially formed on the thin film transistor layer (T).

An anode electrode 40 and an auxiliary electrode 50 are formed on the planarization layer 30 . The auxiliary electrode 50 serves to reduce the resistance of a cathode electrode 80 to be described later.

A bank 60 is formed on the anode electrode 40 and the auxiliary electrode 50 to define a pixel area, and an organic light emitting layer 70 is formed in the pixel area defined by the bank 60. A cathode electrode 80 is formed on the organic light emitting layer 70 .

In the case of the top emission method, light emitted from the organic light emitting layer 70 passes through the cathode electrode 80 and proceeds. Therefore, the cathode electrode 80 is formed using a transparent conductive material, and as a result, the resistance of the cathode electrode 80 increases. In order to reduce the resistance of the cathode electrode 80, the cathode electrode 80 is connected to the auxiliary electrode 50.

The gate insulating film 12 and the interlayer insulating film 14 are formed in a pad area (PA) on the substrate 10, and a signal pad 90 is formed on the interlayer insulating film 14, The passivation layer 20 is formed on the signal pad 90 . A hole is provided in the passivation layer 20, and the signal pad 90 is exposed to the outside through the hole. Since the signal pad 90 needs to be connected to an external driving circuit, a hole is formed in the passivation layer 20 to expose the signal pad 90 to the outside.

Such a conventional top emission type organic light emitting display device has the following problems.

Such a conventional organic light emitting display device is an organic light emitting display device to which a top emission method is applied, and light generated from the organic light emitting layer 70 is emitted toward the cathode electrode 80 . Accordingly, the cathode electrode 80 may be made of a transparent conductive material or a metallic material formed to a thickness of several hundreds of angstroms or less. However, the transparent conductive material has a disadvantage of high resistance, and even when the cathode electrode 80 is made of a metallic material formed to a thickness of several hundreds of angstroms or less, the resistance may be relatively high because the thickness of the cathode electrode 80 is formed thin. .

Therefore, although the auxiliary electrode 50 is provided to lower the resistance, there is a spatial restriction in increasing the size of the auxiliary electrode 50 because the auxiliary electrode 50 is provided on the same layer as the anode electrode 40. There is a limit to lowering the resistance of the cathode electrode 80, such as following. In addition, since the anode electrode 40 is not connected to the auxiliary electrode 50, there is a limit to lowering resistance. In order to improve this, a process of forming additional electrodes on the anode electrode 40 and the cathode electrode 80 may be performed separately, but in this case, there is a disadvantage in that a separate mask process is added.

The present invention has been devised to solve the above-mentioned conventional problems, and provides an organic light emitting display device capable of reducing the resistance of an anode electrode and a cathode electrode without adding a separate mask process and a manufacturing method thereof. make it a task

In addition to the technical problems of the present invention mentioned above, other features and advantages of the present invention will be described below, or will be clearly understood by those skilled in the art from such description and description.

In order to achieve the above object, an organic light emitting display device according to an exemplary embodiment of the present invention includes a substrate including an active area and a pad area, an anode electrode provided in the active area of the substrate, and an organic light emitting layer provided on the anode electrode. And a cathode electrode provided on the organic light emitting layer and an auxiliary electrode connected to the cathode electrode and provided on the same layer as the anode electrode, wherein the anode electrode is provided on a first anode electrode and an upper surface of the first anode electrode. and a second anode electrode, wherein the width of the first anode electrode is greater than that of the second anode electrode.

In addition, a method of manufacturing an organic light emitting diode display according to an embodiment of the present invention includes a process of sequentially forming a first anode electrode and a second anode electrode on a substrate, and sequentially forming a first auxiliary electrode and a second auxiliary electrode on the substrate. forming an organic light emitting layer on the second anode electrode and forming a cathode electrode connected to the second auxiliary electrode on the organic light emitting layer; It is formed on the upper surface of the first auxiliary electrode without covering the side surface of the auxiliary electrode.

According to the present invention as described above, there are the following effects.

According to an embodiment of the present invention, signal pads are formed in a three-layer structure, so that corrosion of the signal pads can be prevented.

According to one embodiment of the present invention, in order to lower the resistance of the anode electrode, the required resistance characteristics of the anode electrode can be more easily adjusted by stacking two anode electrodes, the first anode electrode and the second anode electrode.

According to an embodiment of the present invention, by stacking two auxiliary electrodes, the first auxiliary electrode and the second auxiliary electrode, in order to lower the resistance of the cathode electrode, the required resistance characteristic of the auxiliary electrode can be more easily adjusted.

According to one embodiment of the present invention, the first anode electrode and the second anode electrode can be formed at the same time, and accordingly, an increase in one mask process can be prevented.

The effects obtainable in the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below. .

1 is a schematic cross-sectional view of a conventional top emission type organic light emitting display device.
2 is a cross-sectional view of an organic light emitting display device according to an exemplary embodiment of the present invention.
3A to 3H are process cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the detailed description of the following embodiments taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only the present embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention belongs. It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative, so the present invention is not limited to the details shown. Like reference numbers designate like elements throughout the specification. In addition, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification is used, other parts may be added unless 'only' is used. In the case where a component is expressed in the singular, the case including the plural is included unless otherwise explicitly stated.

In interpreting the components, even if there is no separate explicit description, it is interpreted as including the error range.

In the case of a description of a positional relationship, for example, 'on top of', 'on top of', 'at the bottom of', 'next to', etc. Or, unless 'directly' is used, one or more other parts may be located between the two parts.

In the case of a description of a temporal relationship, for example, 'immediately' or 'directly' when a temporal precedence relationship is described in terms of 'after', 'following', 'next to', 'before', etc. It can also include non-continuous cases unless is used.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may also be the second component within the technical spirit of the present invention.

Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, technically various interlocking and driving are possible, and each embodiment can be implemented independently of each other or can be implemented together in a related relationship. may be

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view of an organic light emitting display device according to an exemplary embodiment of the present invention.

As can be seen in FIG. 2 , the organic light emitting diode display according to an exemplary embodiment includes an active area (AA) and a pad area (PA) provided on a substrate 100 .

In the active area AA on the substrate 100, a thin film transistor layer T, a passivation layer 165, a planarization layer 170, a first anode electrode 180 and a second anode electrode 200, and a first auxiliary An electrode 190 , a second auxiliary electrode 210 , a bank 220 , a barrier rib 230 , an organic emission layer 240 , and a cathode electrode 250 are formed.

The thin film transistor layer T includes an active layer 110 , a gate insulating layer 120 , a gate electrode 130 , an interlayer insulating layer 140 , a source electrode 150 and a drain electrode 160 .

The active layer 110 is formed on the substrate 100 to overlap the gate electrode 130 . The active layer 110 may be made of a silicon-based semiconductor material or an oxide-based semiconductor material. Although not shown, a light blocking film may be additionally formed between the substrate 100 and the active layer 110. In this case, external light incident through the lower surface of the substrate 100 is blocked by the light blocking film, A problem that the active layer 110 is damaged by external light can be prevented.

The gate insulating layer 120 is formed on the active layer 110 . The gate insulating layer 120 serves to insulate the active layer 110 from the gate electrode 130 . The gate insulating layer 120 may be formed of an inorganic insulating material, such as silicon oxide (SiOX), silicon nitride (SiNX), or a multilayer thereof, but is not necessarily limited thereto. The gate insulating layer 120 may extend to the pad area PA.

The gate electrode 130 is formed on the gate insulating layer 120 . The gate electrode 130 is formed to overlap the active layer 110 with the gate insulating layer 120 interposed therebetween. The gate electrode 130 is any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or It may be a single layer or multi-layer made of these alloys, but is not necessarily limited thereto.

The interlayer insulating layer 140 is formed on the gate electrode 130 . The interlayer insulating film 140 may be formed of the same inorganic insulating material as the gate insulating film 120, for example, silicon oxide (SiOX), silicon nitride (SiNX), or a multilayer thereof, but is not necessarily limited thereto. no. The interlayer insulating layer 140 may extend to the pad area PA.

The source electrode 150 and the drain electrode 160 are formed to face each other on the interlayer insulating layer 140 . In the aforementioned gate insulating layer 120 and interlayer insulating layer 140, a first contact hole CH1 exposing one end region of the active layer 110 and a second contact hole exposing the other end region of the active layer 110 (CH2) is provided, the source electrode 150 is connected to the other end region of the active layer 110 through the second contact hole (CH2), and the drain electrode 160 is connected to the first contact hole (CH2). It is connected to one end of the active layer 110 through (CH1).

The source electrode 150 may include a lower source electrode 151 , a central source electrode 152 , and an upper source electrode 153 .

The lower source electrode 151 may be formed between the interlayer insulating film 140 and the central source electrode 152 to increase adhesion between the interlayer insulating film 140 and the central source electrode 152. there is. In addition, the lower source electrode 151 may prevent the lower surface of the central source electrode 152 from being corroded by protecting the lower surface of the central source electrode 152 . Accordingly, the oxidation degree of the lower source electrode 151 may be smaller than that of the central source electrode 152 . That is, a material constituting the lower source electrode 151 may be made of a material having stronger corrosion resistance than a material constituting the central source electrode 152 . As such, the lower source electrode 151 serves as an adhesion promoting layer or an anti-corrosion layer, and may be made of an alloy of molybdenum and titanium (MoTi), but is not necessarily limited thereto.

The central source electrode 152 is formed between the lower source electrode 151 and the upper source electrode 153 . The central source electrode 152 may be made of copper (Cu), a metal having low resistance, but is not necessarily limited thereto. The central source electrode 152 may be made of a metal having relatively low resistance compared to the lower source electrode 151 . In order to reduce the total resistance of the source electrode 150 , the thickness of the central source electrode 152 may be formed thicker than that of the lower source electrode 151 .

The upper source electrode 153 may be formed between the central source electrode 152 and the passivation layer 165 to increase adhesion between the central source electrode 152 and the passivation layer 165. there is. In addition, the upper source electrode 153 may protect the upper surface of the central source electrode 152 from being corroded. Accordingly, the oxidation degree of the upper source electrode 153 may be smaller than that of the central source electrode 152 . That is, a material constituting the upper source electrode 153 may be made of a material having stronger corrosion resistance than a material constituting the central source electrode 152 . As described above, the upper source electrode 153 serves as an adhesion promoting layer or an anti-corrosion layer, and may be made of an alloy of molybdenum and titanium (MoTi), a transparent conductive material such as ITO, but is not necessarily limited thereto.

Similar to the aforementioned source electrode 150, the drain electrode 160 may include a lower drain electrode 161, a central drain electrode 162, and an upper drain electrode 163.

The lower drain electrode 161 may be formed between the interlayer insulating film 140 and the central drain electrode 162 to increase adhesion between the interlayer insulating film 140 and the central drain electrode 162. there is. In addition, the lower drain electrode 161 protects the lower surface of the central drain electrode 162 to prevent the lower surface of the central drain electrode 162 from being corroded. Accordingly, the oxidation degree of the lower drain electrode 161 may be smaller than that of the central drain electrode 162 . That is, a material forming the lower drain electrode 161 may be made of a material having stronger corrosion resistance than a material forming the central drain electrode 162 . As described above, the lower drain electrode 161 serves as an adhesion promoting layer or an anti-corrosion layer, and may be made of an alloy of molybdenum and titanium (MoTi), but is not necessarily limited thereto.

The central drain electrode 162 is formed between the lower drain electrode 161 and the upper drain electrode 163 . The central drain electrode 162 may be made of copper (Cu), a metal having low resistance, but is not necessarily limited thereto. The central drain electrode 162 may be made of a metal having relatively low resistance compared to the lower drain electrode 161 . In order to reduce the total resistance of the drain electrode 160 , the thickness of the central drain electrode 162 may be formed thicker than that of the lower drain electrode 161 .

The upper drain electrode 163 may be formed between the central drain electrode 162 and the passivation layer 165 to increase adhesion between the central drain electrode 162 and the passivation layer 165. there is. In addition, the upper drain electrode 163 protects the upper surface of the central drain electrode 162, thereby preventing the upper surface of the central drain electrode 162 from being corroded. Accordingly, the oxidation degree of the upper drain electrode 163 may be smaller than that of the central drain electrode 162 . That is, a material forming the upper drain electrode 163 may be made of a material having stronger corrosion resistance than a material forming the central drain electrode 162 . As described above, the upper drain electrode 163 serves as an adhesion promoting layer or an anti-corrosion layer, and may be made of an alloy of molybdenum and titanium (MoTi), a transparent conductive material such as ITO, but is not necessarily limited thereto.

The upper drain electrode 163 may be formed of the same material and thickness as the upper source electrode 153, and the central drain electrode 162 may be formed of the same material and thickness as the central source electrode 152. It can be. In addition, the lower drain electrode 161 may be formed of the same material and the same thickness as the lower source electrode 151. In this case, the drain electrode 160 and the source electrode 150 may be formed at the same time through the same process. There are advantages to being able to

The configuration of the thin film transistor layer T as described above is not limited to the illustrated structure, and may be variously modified with configurations known to those skilled in the art. As an example, although the figure shows a top gate structure in which the gate electrode 130 is formed on the active layer 110, the bottom gate structure in which the gate electrode 130 is formed under the active layer 110 is shown. It may also consist of a bottom gate structure.

The passivation layer 165 is formed on the thin film transistor layer T, more specifically, on the upper surfaces of the source electrode 150 and the drain electrode 160. The passivation layer 165 serves to protect the thin film transistor layer T, and the passivation layer 165 may be made of an inorganic insulating material, such as silicon oxide (SiOX) or silicon nitride (SiNX). However, it is not necessarily limited thereto. The passivation layer 165 may extend to the pad area PA.

The planarization layer 170 is formed on the passivation layer 165 . The planarization layer 170 performs a function of flattening the upper portion of the substrate 100 on which the thin film transistor T is provided. The planarization layer 170 may be made of an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. However, it is not necessarily limited thereto. The planarization layer 170 may not extend to the pad area PA.

The first anode electrode 180 and the first auxiliary electrode 190 are formed on the planarization layer 170 . That is, the first anode electrode 180 and the first auxiliary electrode 190 are formed on the same layer. The passivation layer 165 and the planarization layer 170 described above are provided with a third contact hole CH3 exposing the source electrode 150, and the source electrode 150 through the third contact hole CH3. ) and the first anode electrode 180 are connected.

The first anode electrode 180 may include a first lower anode electrode 181 , a first central anode electrode 182 and a first upper anode electrode 183 .

The first lower anode electrode 181 is formed between the planarization layer 170 and the first central anode electrode 182 to increase adhesion between the planarization layer 170 and the first central anode electrode 182. can play a stimulating role. In addition, the first lower anode electrode 181 protects the lower surface of the first central anode electrode 182 to prevent the lower surface of the first central anode electrode 182 from being corroded. Accordingly, the oxidation degree of the first lower anode electrode 181 may be smaller than that of the first central anode electrode 182 . That is, the material forming the first lower anode electrode 181 may be made of a material having stronger corrosion resistance than the material forming the first central anode electrode 182 . As such, the first lower anode electrode 181 serves as an adhesion promoting layer or an anti-corrosion layer, and may be made of an alloy of molybdenum and titanium (MoTi), but is not necessarily limited thereto.

The first central anode electrode 182 is formed on the upper surface of the first lower anode electrode 181 . The first central anode electrode 182 may be made of copper (Cu), a metal having low resistance, but is not necessarily limited thereto. The first central anode electrode 182 may be made of a metal having relatively low resistance compared to the first lower anode electrode 181 . In order to reduce the total resistance of the first anode electrode 180, the thickness of the first central anode electrode 182 may be formed thicker than the thickness of the first lower anode electrode 181.

The first upper anode electrode 183 is formed on the upper surface of the first central anode electrode 182 . The first upper anode electrode 183 may protect the upper surface of the first central anode electrode 182 from being corroded. Accordingly, the oxidation degree of the first upper anode electrode 183 may be smaller than that of the first central anode electrode 182 . That is, the material forming the first upper anode electrode 183 may be made of a material having stronger corrosion resistance than the material forming the first central anode electrode 182 . As such, the first upper anode electrode 183 serves as an anti-corrosion layer, and may be made of a transparent conductive material such as ITO or an alloy of molybdenum and titanium (MoTi), but is not necessarily limited thereto.

Similar to the first anode electrode 180 described above, the first auxiliary electrode 190 includes a first auxiliary electrode 191, a central auxiliary electrode 192, and an auxiliary upper electrode 193, It can be done.

The first lower auxiliary electrode 191 is formed between the planarization layer 170 and the first central auxiliary electrode 192 to increase the adhesive force between the planarization layer 170 and the first central auxiliary electrode 192. It plays a role in improving the temperature and can prevent the lower surface of the first central auxiliary electrode 192 from being corroded. Accordingly, the oxidation degree of the first auxiliary lower electrode 191 may be smaller than that of the first central auxiliary electrode 192 . That is, a material constituting the first lower auxiliary electrode 191 may be made of a material having stronger corrosion resistance than a material constituting the first central auxiliary electrode 192 . In this way, the first lower auxiliary electrode 191 may be made of the same alloy of molybdenum and titanium (MoTi) as the first lower anode electrode 181 described above, but is not necessarily limited thereto.

The first central auxiliary electrode 192 is formed on the upper surface of the first lower auxiliary electrode 191 and may be made of the same copper (Cu) as the first upper anode electrode 182 described above, but is necessarily limited thereto. It is not. The overall resistance of the first auxiliary electrode 190 can be reduced when the thickness of the first central auxiliary electrode 192 having a relatively low resistance is thicker than that of the first lower auxiliary electrode 191 having a relatively high resistance. desirable.

The first upper auxiliary electrode 193 is formed on the upper surface of the first central auxiliary electrode 192 . The first upper auxiliary electrode 193 may prevent the upper surface of the first central auxiliary electrode 192 from being corroded. Accordingly, the oxidation degree of the first auxiliary upper electrode 193 may be smaller than that of the first central auxiliary electrode 192 . That is, the material forming the first auxiliary upper electrode 193 may be made of a material having stronger corrosion resistance than the material forming the first central auxiliary electrode 192 . In this way, the first upper auxiliary electrode 193 may be made of the same transparent conductive material such as ITO as the above-described first upper anode electrode 183 or an alloy of molybdenum and titanium (MoTi), but is not necessarily limited thereto. no.

The first upper auxiliary electrode 193 may be formed of the same material and the same thickness as the first upper anode electrode 183, and the first central auxiliary electrode 192 may be formed of the first central anode electrode 182 It may be formed of the same material and the same thickness as. In addition, the first lower auxiliary electrode 191 may be formed of the same material and the same thickness as the first lower anode electrode 181. In this case, the first auxiliary electrode 190 and the first anode electrode 180 There is an advantage that can be formed simultaneously through the same process.

The second anode electrode 200 is formed on the upper surface of the first anode electrode 180 . The second anode electrode 200 is formed to contact the upper surface of the first anode electrode 180 without covering the side surface of the first anode electrode 180 . In addition, the width of the first anode electrode 200 may be formed to be greater than the width of the second anode electrode 180 . That is, a separate insulating layer is not formed between the second anode electrode 200 and the first anode electrode 180, and thus the insulating layer and contact hole formation process can be omitted. The second anode electrode 200 serves to reflect the light emitted from the organic light emitting layer 240 upward, and thus includes a material having excellent reflectivity. In addition, the second anode electrode 200 is formed to cover the top surface of the first anode electrode 180, so that the top surface of the first anode electrode 180 is prevented from being corroded.

The second anode electrode 200 may include a second lower anode electrode 201 and a second upper anode electrode 202 .

The second lower anode electrode 201 is formed between the first anode electrode 180 and the second upper anode electrode 202 . The second lower anode electrode 201 is made of a material having lower resistance and higher reflectivity than the second upper anode electrode 202, and may be made of, for example, silver (Ag), but is not necessarily limited thereto. When the thickness of the second lower anode electrode 201 having a relatively low resistance is thicker than that of the second upper anode electrode 202 having a relatively high resistance, the overall resistance of the second anode electrode 200 can be reduced. may be desirable.

The second upper anode electrode 202 is formed on the upper surface of the second lower anode electrode 201 to prevent the upper surface of the second lower anode electrode 201 from being corroded. Accordingly, the oxidation degree of the second upper anode electrode 202 may be smaller than that of the second lower anode electrode 201 . That is, the material constituting the second upper anode electrode 202 may be made of a material having stronger corrosion resistance than the material constituting the second lower anode electrode 201 . The second upper anode electrode 202 may be made of a transparent conductive material such as ITO, but is not necessarily limited thereto.

The second auxiliary electrode 210 is formed on the top surface of the first auxiliary electrode 190 without covering the side surface of the first auxiliary electrode 190 . In addition, the width of the first auxiliary electrode 190 may be formed to be greater than the width of the second auxiliary electrode 210 . The second auxiliary electrode 210 is formed on the same layer as the second anode electrode 200 described above. The second auxiliary electrode 210 is formed to contact the upper surface of the first auxiliary electrode 190 . That is, a separate insulating layer is not formed between the second auxiliary electrode 210 and the first auxiliary electrode 190, and thus the insulating layer and contact hole formation process can be omitted. The second auxiliary electrode 210 serves to lower the resistance of the cathode electrode 250 together with the first auxiliary electrode 190 . In addition, the second auxiliary electrode 210 is formed to cover the top surface of the first auxiliary electrode 190, thereby preventing the top surface of the first auxiliary electrode 190 from being corroded.

The second auxiliary electrode 210 may include a second lower auxiliary electrode 211 and a second upper auxiliary electrode 212 .

The second lower auxiliary electrode 211 is formed between the first auxiliary electrode 190 and the second upper auxiliary electrode 212 . The second auxiliary lower electrode 211 is made of a material having lower resistance and higher reflectivity than the second auxiliary upper electrode 212, and may be made of, for example, silver (Ag), but is not necessarily limited thereto. The overall resistance of the second auxiliary electrode 210 can be reduced when the thickness of the second auxiliary lower electrode 211 having a relatively low resistance is thicker than that of each of the auxiliary second upper electrodes 212 having a relatively high resistance. may be desirable.

The second auxiliary upper electrode 212 is formed on the upper surface of the auxiliary lower electrode 211 to prevent the upper surface of the auxiliary lower electrode 211 from being corroded. Accordingly, the oxidation degree of the second auxiliary upper electrode 212 may be smaller than that of the second auxiliary lower electrode 211 . That is, the material forming the second auxiliary upper electrode 212 may be made of a material having stronger corrosion resistance than the material forming the second auxiliary lower electrode 211 . The second upper auxiliary electrode 212 may be made of a transparent conductive material such as ITO, but is not necessarily limited thereto.

The second upper auxiliary electrode 212 is formed of the same material and the same thickness as the second upper anode electrode 202, and the second lower auxiliary electrode 211 has the same material as the second lower anode electrode 201. It may be formed of the same material and thickness, and in this case, there is an advantage in that the second auxiliary electrode 210 and the second anode electrode 200 can be simultaneously formed through the same process.

The bank 220 is formed on the second anode electrode 200 and the second auxiliary electrode 210 .

The bank 220 is formed on one side and the other side to cover both the side surfaces of the first anode electrode 180 and the second anode electrode 200 while exposing the top surface of the second anode electrode 200. Since the bank 220 is formed to expose the upper surface of the second anode electrode 200, an area where an image is displayed can be secured. In addition, since the bank 220 is formed on one side and the other side of the first anode electrode 180 and the second anode electrode 200, the side surface of the second central anode electrode 202 vulnerable to corrosion is exposed to the outside. It is possible to prevent the side surface of the second central anode electrode 202 from being corroded.

The bank 220 is formed on one side and the other side to cover both side surfaces of the first auxiliary electrode 190 and the second auxiliary electrode 210 while exposing the top surface of the second auxiliary electrode 210 . Since the bank 220 is formed to expose the upper surface of the second auxiliary electrode 210 , an electrical connection space between the second auxiliary electrode 210 and the cathode electrode 250 may be secured. In addition, since the bank 220 is formed on one side and the other side of the first auxiliary electrode 190 and the second auxiliary electrode 210, the side surface of the second central auxiliary electrode 212 vulnerable to corrosion is exposed to the outside. It is possible to prevent the side surface of the second central auxiliary electrode 212 from being corroded.

In addition, the bank 220 is formed between the second anode electrode 200 and the second auxiliary electrode 210 to insulate the second anode electrode 200 and the second auxiliary electrode 210 from each other. . Such a bank 220 may be made of an organic insulating material such as polyimide resin, acrylic resin, or benzocyclobutene (BCB), but is not necessarily limited thereto.

The barrier rib 230 is formed on the second auxiliary electrode 210 . The barrier rib 230 is spaced apart from the bank 220 by a predetermined distance, and the second auxiliary electrode 210 and the cathode electrode ( 250) are electrically connected to each other. The second auxiliary electrode 210 and the cathode electrode 250 may be electrically connected without forming the barrier rib 230 . However, when the barrier rib 230 is formed, there is an advantage in that the organic light emitting layer 240 can be deposited and formed more easily. A more detailed description of this is as follows.

If the barrier rib 230 is not formed, the second auxiliary electrode 210 is not covered by the organic light emitting layer 240 when the organic light emitting layer 240 is deposited. A mask pattern covering the upper surface of the auxiliary electrode 210 is required. However, when the barrier rib 230 is formed, the upper surface of the barrier rib 230 serves as an eaves during deposition of the organic light emitting layer 240, so that the organic light emitting layer 240 is formed in a region under the eaves. ) is not deposited, so a mask pattern covering the upper surface of the second auxiliary electrode 210 is not needed. That is, when the upper surface of the barrier rib 230 serving as an eaves is configured to cover the space between the barrier rib 230 and the bank 220 based on a front view, the organic light emitting layer ( 240) does not penetrate into the spaced apart space between the partition wall 230 and the bank 220, so that the second auxiliary electrode 210 operates in the spaced space between the partition wall 230 and the bank 220. may be exposed. In particular, since the organic light emitting layer 240 can be formed through a deposition process having excellent linearity of a deposition material such as evaporation, during the deposition process of the organic light emitting layer 240, the barrier rib 230 and the bank The organic light emitting layer 240 is not deposited in the spaced space between the layers 220 .

As described above, in order for the upper surface of the barrier rib 230 to serve as an eaves, the width of the upper surface of the barrier rib 230 is greater than that of the lower surface of the barrier rib 230 . The barrier rib 230 may include a first barrier rib 231 at a lower portion and a second barrier rib 232 at an upper portion. The first barrier rib 231 is formed on the upper surface of the second auxiliary electrode 210 and may be formed of the same material as the bank 220 through the same process. The second barrier rib 232 is formed on an upper surface of the first barrier rib 231 . The width of the upper surface of the second partition 232 is greater than the width of the lower surface of the second partition 232. By being configured to cover the spaced apart space between the eaves (eaves) can perform the role.

The organic emission layer 240 is formed on the second anode electrode 200 . The organic light emitting layer 240 includes a hole injecting layer, a hole transporting layer, an emitting layer, an electron transporting layer, and an electron injecting layer, It can be done. The structure of the organic light emitting layer 240 may be changed into various shapes known in the art.

The organic emission layer 240 may extend to an upper surface of the bank 220 . However, the organic emission layer 240 does not extend to the upper surface of the second auxiliary electrode 210 while covering the upper surface of the second auxiliary electrode 210 . This is because when the organic light emitting layer 240 covers the upper surface of the second auxiliary electrode 210, electrical connection between the second auxiliary electrode 210 and the cathode electrode 250 becomes difficult. As described above, the organic light emitting layer 240 may be formed through a deposition process without a mask covering the upper surface of the second auxiliary electrode 210. In this case, the organic light emitting layer 240 is formed of the barrier rib 230. It can also be formed on the upper surface.

The cathode electrode 250 is formed on the organic emission layer 240 . Since the cathode electrode 250 is formed on a surface from which light is emitted, it is made of a transparent conductive material. Since the cathode electrode 250 is made of a transparent conductive material, the resistance is high, and thus the cathode electrode 250 is connected to the second auxiliary electrode 210 to reduce the resistance of the cathode electrode 250. That is, the cathode electrode 250 is connected to the second auxiliary electrode 210 through a spaced space between the barrier rib 230 and the bank 220 . Since the cathode electrode 250 can be formed through a deposition process in which the straightness of the deposition material is poor, such as sputtering, during the deposition process of the cathode electrode 250, the barrier rib 230 and the bank 220 ) The cathode electrode 250 may be deposited in a spaced space between.

Although not shown in the drawings, an encapsulation layer may be additionally formed on the cathode electrode 250 to prevent penetration of moisture. The sealing layer may use various materials known in the art. Also, although not shown, a color filter may be additionally formed for each pixel on the cathode electrode 250, and in this case, white light may be emitted from the organic light emitting layer 240.

A gate insulating layer 120 , an interlayer insulating layer 140 , a signal pad 300 , and a passivation layer 165 are formed in the pad area PA on the substrate 100 .

The gate insulating layer 120 is formed on the substrate 100 , and the interlayer insulating layer 140 is formed on the gate insulating layer 120 . The gate insulating layer 120 and the interlayer insulating layer 140 extend from the active area AA and are formed on the entire surface of the pad area PA.

The signal pad 300 is formed on the interlayer insulating layer 140 . The signal pad 300 may be formed on the same layer as the aforementioned source electrode 150 and drain electrode 160 of the active area AA.

The signal pad 300 may include a lower signal pad 301 , a central signal pad 302 and an upper signal pad 303 .

The lower signal pad 301 may be formed between the interlayer insulating film 140 and the central signal pad 302 to increase adhesion between the interlayer insulating film 140 and the central signal pad 302. there is. Also, the bottom surface of the lower signal pad 301 may be prevented from being corroded. Accordingly, the oxidation degree of the lower signal pad 301 may be smaller than that of the central signal pad 302 . That is, a material constituting the lower signal pad 301 may be made of a material having stronger corrosion resistance than a material constituting the central signal pad 302 . In this way, the lower signal pad 161 may be formed of the same alloy of molybdenum and titanium (MoTi) as the lower source electrode 151 or the lower drain electrode 161 described above, but is not necessarily limited thereto.

The central signal pad 302 is formed between the lower signal pad 301 and the upper signal pad 303 . The center signal pad 302 may be made of copper (Cu), which is a low resistance metal, but is not necessarily limited thereto. The central signal pad 302 may be made of a metal having relatively low resistance compared to the lower signal pad 301. In order to reduce the total resistance of the signal pad 300, the thickness of the central signal pad 302 is It may be preferable to be thicker than the thickness of the lower signal pad 301 .

The upper signal pad 303 may be formed between the central signal pad 302 and the passivation layer 165 to increase adhesion between the central signal pad 302 and the passivation layer 165. there is. In addition, the upper signal pad 303 can prevent the upper surface of the lower signal pad 302 from being corroded. Accordingly, the oxidation degree of the upper signal pad 303 may be smaller than that of the central signal pad 302 . That is, a material constituting the upper signal pad 303 may be made of a material having stronger corrosion resistance than a material constituting the central signal pad 302 . As such, the upper signal pad 303 may be made of an alloy of molybdenum and titanium (MoTi), a transparent conductor such as ITO, which is the same as the upper source electrode 153 or the upper drain electrode 163 described above, but is necessarily limited thereto. it is not going to be

The upper signal pad 303 may be formed of the same material and the same thickness as the upper source electrode 153 and/or the upper drain electrode 163, and the central signal pad 302 may be formed of the central source electrode ( 152) and/or may be formed of the same material and the same thickness as the central drain electrode 162. Also, the lower signal pad 301 may be formed of the same material and the same thickness as the lower source electrode 151 and/or the lower drain electrode 161. In this case, the signal pad 300 and the source electrode 150 and/or the drain electrode 160 can be simultaneously formed through the same process.

The passivation layer 165 is formed on the signal pad 300 . The passivation layer 165 extends from the active area AA. A fourth contact hole CH4 exposing a part of the signal pad 300 is provided in the passivation layer 165 . The passivation layer 165 is formed to cover all side surfaces of the signal pad 300 while exposing the upper surface of the signal pad 300 . Since the passivation layer 165 is formed to expose the upper surface of the signal pad 300, an area connected to an external driving circuit may be secured. In addition, since the passivation layer 165 is formed on one side and the other side of the signal pad 300, the side surface of the central signal pad 302, which is vulnerable to corrosion, is prevented from being exposed to the outside, thereby preventing the central signal pad 302 from being exposed to the outside. ) can prevent the side surface from being corroded.

3A to 3H are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention, which relates to the method of manufacturing the organic light emitting display device according to FIG. 2 described above. Therefore, the same reference numerals are assigned to the same components, and redundant descriptions of repetitive parts in materials and structures of each component are omitted.

First, as can be seen in FIG. 3A, an active layer 110, a gate insulating film 120, a gate electrode 130, an interlayer insulating film 140, a source electrode 150, and a drain electrode 160 are formed on a substrate 100. , and the signal pad 300 are sequentially formed.

More specifically, the active layer 110 is formed on the substrate 100, the gate insulating film 120 is formed on the active layer 110, and the gate insulating film 120 is formed on the active layer 110. A gate electrode 130 is formed, the interlayer insulating film 140 is formed on the gate electrode 130, and a first contact hole (CH1) and a second contact hole (CH1) are formed in the gate insulating film 120 and the interlayer insulating film 140. 2 A contact hole CH2 is formed, and then the drain electrode 160 connected to one end of the active layer 110 through the first contact hole CH1 and the second contact hole CH2 are formed. The source electrode 150 connected to the other end of the active layer 110 and the signal pad 300 are formed.

Here, the active layer 110, the gate electrode 130, the source electrode 150, and the drain electrode 160 are formed in the active area AA, and the gate insulating layer 120 and the interlayer insulating layer 140 is formed to extend from the active area AA to the pad area PA, and the signal pad 300 is formed in the pad area PA. Through this process, the thin film transistor layer T is formed in the active area AA, and the signal pad 300 is formed in the pad area PA.

The source electrode 150 includes a lower source electrode 151, a central source electrode 152, and an upper source electrode 153, and the drain electrode 160 includes a lower drain electrode 161 and a central drain electrode 162. ) and an upper drain electrode 163, and the signal pad 300 includes a lower signal pad 301, a central signal pad 302 and an upper signal pad 303. The source electrode 150, the drain electrode 160, and the signal pad 300 may be simultaneously formed of the same material through the same patterning process.

Next, as shown in FIG. 3B, a passivation layer 165 is formed on the source electrode 150, the drain electrode 160, and the signal pad 300, and planarization is performed on the passivation layer 165. Layer 170 is formed. The planarization layer 170 is formed to have a third contact hole CH3.

The passivation layer 165 is formed to extend from the active area AA to the pad area PA, and the planarization layer 170 is formed in the active area AA. Since the thin film transistor is not formed in the pad area PA, there is little need to planarize the surface thereof, and thus the planarization layer 170 may not be formed in the pad area PA.

Next, as shown in FIG. 3C , a third contact hole CH3 is formed in the passivation layer 165 by removing a predetermined area of the passivation layer 165 . Then, a first electrode layer 171, a second electrode layer 172, a third electrode layer 173, a fourth electrode layer 174, and a fifth electrode layer 171 are sequentially stacked on the planarization layer 170 from below. An electrode layer 175 is formed. At this time, the third electrode layer 173 is formed thicker than the fifth electrode layer 175 . Portions of the first electrode layer 171, the second electrode layer 172, the third electrode layer 173, the fourth electrode layer 174, and the fifth electrode layer 175 form the third contact hole (CH3). ) through which it is formed to be connected to the source electrode 150.

Then, on the first electrode layer 171, second electrode layer 172, third electrode layer 173, fourth electrode layer 174, and fifth electrode layer 175, the first pattern portion 215) and the second pattern part 216 are formed. The first pattern part 215 and the second pattern part 216 are spaced apart from each other, and the first pattern part 215 may be formed to overlap the source electrode 150 . The first pattern part 215 and the second pattern part 216 may have a structure in which a width of an upper surface is narrower than a width of a lower surface thereof. The first pattern part 215 and the second pattern part 216 may be made of, for example, photo acryl.

Next, as can be seen in FIG. 3D, the first electrode layer 171, the second electrode layer 172, and the third electrode layer are formed using the first pattern portion 215 and the second pattern portion 216 as masks. (173), when the fourth electrode layer 174 and the fifth electrode layer 175 are etched, the fourth and fifth electrode layers 174 and 175 form the first pattern portion 215 and the fifth electrode layer 175. 2 It is etched to the inside of the pattern portion 216 . At this time, since the third electrode layer 173 is formed thickly, it may be shaved off a little, but remains. Thus, the fourth and fifth electrode layers 174 and 175 are formed to be spaced apart in two, and the second anode electrode 200 and the second auxiliary electrode 210 are respectively formed.

Next, as can be seen in FIG. 3E, when heat is applied to the first pattern part 215 and the second pattern part 216, the first pattern part 215 and the second pattern part 216 flow by the heat It becomes a form that surrounds both sides of the second anode electrode 200 and the second auxiliary electrode 210, respectively. Therefore, the first pattern part 215 and the second pattern part 216 can protect the second anode electrode 200 and the second auxiliary electrode 210 from being further etched from the next etching process.

Then, when the first, second and third electrode layers 171, 172 and 173 are etched using the first pattern part 215 and the second pattern part 216 as masks, the first pattern part 215 and the second pattern part 216 are etched. The first, second and third electrode layers 171 , 172 and 173 are etched to the inside of the first pattern part 215 and the second pattern part 216 . The first, second, and third electrode layers 171, 172, and 173 are formed by being spaced apart in two, and the first anode electrode 180 and the first auxiliary electrode 190 are the second anode electrode 200 and the second auxiliary electrode 210 and layers are formed, respectively. That is, the second anode electrode 200 is formed on the upper surface of the first anode electrode 180 without covering the side surface of the first anode electrode 180 . Also, the second auxiliary electrode 210 is formed on the upper surface of the first auxiliary electrode 190 without covering the side surface of the first auxiliary electrode 190 . At this time, the first anode electrode 180 and the second anode electrode 200 are connected to the source electrode 150 through the third contact hole CH3.

Then, the first pattern part 215 and the second pattern part 216 are removed by a strip process.

In this way, the first anode electrode 180 and the first auxiliary electrode 190 are formed at the same time, and the second anode electrode 200 and the second auxiliary electrode 210 are formed at the same time. In this case, the first anode electrode 180 and the first auxiliary electrode 190 are formed after the second anode electrode 200 and the second auxiliary electrode 210 are formed. In addition, by using the first pattern part 215 and the second pattern part 216, the first anode electrode 180, the first auxiliary electrode 190, the second anode electrode 200 and the second auxiliary electrode 180 are all at once. Since the electrode 210 can be formed, an increase in the mask process can be prevented.

Next, as can be seen in FIG. 3F, forming a bank 220 on one side and the other side of the first anode electrode 180 and the second anode electrode 200 while exposing the upper surface of the second anode electrode 200 In addition, the bank 220 is formed on one side and the other side of the first auxiliary electrode 190 and the second auxiliary electrode 210 while exposing the upper surface of the second auxiliary electrode 210 .

In addition, a first barrier rib 231 and a second barrier rib 232 are sequentially formed on the exposed upper surface of the second auxiliary electrode 210 . The first barrier rib 231 may be simultaneously formed of the same material as the bank 220 through the same pattern forming process. The barrier rib 230 is formed to be spaced apart from the bank 220 by a predetermined distance, and thus, a spaced space is provided between the barrier rib 230 and the bank 220 .

In order for the upper surface of the barrier rib 230 to serve as an eaves, the width of the upper surface of the second barrier rib 232 is greater than that of the lower surface of the second barrier rib 232 . In particular, when viewed from the front, the upper surface of the second barrier rib 232 covers the space between the barrier rib 230 and the bank 220, so that during the deposition process of the organic light emitting layer 240 described later It is possible to prevent the organic emission layer 240 from being deposited in a space between the barrier rib 230 and the bank 220 .

Next, as shown in FIG. 3G , an organic emission layer 240 is formed on the second anode electrode 200 . The organic light emitting layer 240 is formed through a deposition process having excellent linearity of a deposition material such as evaporation. Accordingly, the organic light emitting layer 240 is formed on the upper surfaces of the bank 220 and the barrier rib 230. However, it is not deposited in the spaced apart space between the barrier rib 230 and the bank 220 . That is, since the upper surface of the barrier rib 230 serves as an eaves during deposition of the organic light emitting layer 240, the organic light emitting layer 240 does not have a mask pattern covering the upper surface of the second auxiliary electrode 210. ) may prevent the organic light emitting layer 240 from being deposited into the space between the barrier rib 230 and the bank 220 .

Next, as shown in FIG. 3H , a cathode electrode 250 is formed on the organic light emitting layer 240 .

The cathode electrode 250 is formed to be connected to the second auxiliary electrode 210 through a spaced space between the barrier rib 230 and the bank 220 . The cathode electrode 250 may be formed through a deposition process in which the straightness of the deposition material is poor, such as sputtering, and thus, during the deposition process of the cathode electrode 250, the barrier rib 230 and the bank ( 220, the cathode electrode 250 may be deposited in the spaced apart space.

Then, a predetermined area of the passivation layer 165 corresponding to the pad area PA is removed to form a fourth contact hole CH4 in the passivation layer 165 .

The signal pad 300 is exposed to the outside by the fourth contact hole CH4 provided in the passivation layer 165 .

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and may be variously modified and implemented without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed according to the scope of the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100: substrate T: thin film transistor layer
165: passivation layer 170: planarization layer
180: first anode electrode 190: first auxiliary electrode
200: second anode electrode 210: second auxiliary electrode
220: bank 230: bulkhead
240: organic light emitting layer 250: cathode electrode
300: signal pad

Claims (12)

a substrate including an active region and a pad region;
an anode electrode provided in an active region of the substrate;
an organic light emitting layer provided on the anode electrode;
a cathode electrode provided on the organic light emitting layer; and
An auxiliary electrode connected to the cathode electrode and provided on the same layer as the anode electrode,
The anode electrode includes a first anode electrode and a second anode electrode provided on an upper surface of the first anode electrode, and the width of the first anode electrode is greater than that of the second anode electrode,
the first anode electrode comprises a first lower anode electrode, a first central anode electrode on the first lower anode electrode, and a first upper anode electrode on the first central anode electrode;
The second anode electrode includes a second lower anode electrode on the first upper anode electrode and a second upper anode electrode on the second lower anode electrode,
Resistance of the second lower anode electrode is lower than resistances of the first upper anode electrode and the second upper anode electrode,
The thickness of the first upper anode electrode is formed thicker than the thickness of the second upper anode electrode,
The auxiliary electrode is sequentially provided on the same layer as each of the first lower anode electrode, the first central anode electrode, the first upper anode electrode, the second lower anode electrode, and the second upper anode electrode, and is spaced apart from each other. a first lower auxiliary electrode, a first central auxiliary electrode, a first upper auxiliary electrode, a second lower auxiliary electrode, and a second upper auxiliary electrode disposed thereon;
a width of an upper surface of the first central auxiliary electrode is smaller than a width of an upper surface of the first lower auxiliary electrode and wider than a width of an upper surface of the first auxiliary upper electrode;
The upper surface of the second auxiliary lower electrode has a width smaller than that of the first auxiliary upper electrode and wider than the width of the second auxiliary upper electrode. delete According to claim 1,
The oxidation degree of the first lower anode electrode and the first upper anode electrode is smaller than the oxidation degree of the first central anode electrode, and the resistance of the first central anode electrode is the resistance of the first lower anode electrode and the first upper anode electrode. lower than the resistance of the electrode,
The oxidation degree of the second upper anode electrode is smaller than the oxidation degree of the second lower anode electrode. According to claim 1,
A signal pad is included in a pad region of the substrate;
The signal pad includes a lower signal pad, a central signal pad, and an upper signal pad,
The oxidation degree of the lower signal pad and the upper signal pad is less than that of the central signal pad, and the resistance of the central signal pad is lower than that of the lower signal pad and the upper signal pad. According to claim 1,
The auxiliary electrode is provided to cover the first auxiliary electrode including the first lower auxiliary electrode, the first center auxiliary electrode, and the first upper auxiliary electrode and the upper surface of the first auxiliary electrode, and the second lower auxiliary electrode and a second auxiliary electrode including the second upper auxiliary electrode. According to claim 5,
The organic light emitting display device further includes a bank to cover both side surfaces of the first auxiliary electrode and the second auxiliary electrode. According to claim 6,
It is provided on the second auxiliary electrode and further comprises a barrier rib provided to be spaced apart from the bank,
The cathode electrode is connected to the second auxiliary electrode through a spaced apart space between the bank and the barrier rib. sequentially forming a first anode electrode and a second anode electrode on a substrate;
sequentially forming a first auxiliary electrode and a second auxiliary electrode on a substrate;
forming an organic light emitting layer on the second anode electrode; and
Forming a cathode electrode connected to the second auxiliary electrode on the organic light emitting layer;
The second auxiliary electrode is formed on the upper surface of the first auxiliary electrode without covering the side surface of the first auxiliary electrode,
The step of sequentially forming the first anode electrode and the second anode electrode may include sequentially stacking a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer, and a fifth electrode layer on the substrate. Including the forming process,
The resistance of the fourth electrode layer is lower than the resistances of the third electrode layer and the fifth electrode layer,
The thickness of the third electrode layer is formed thicker than the thickness of the fifth electrode layer,
The step of sequentially forming the first auxiliary electrode and the second auxiliary electrode on the substrate,
A pattern having a structure in which the width of the upper surface is narrower than the width of the lower surface on the first electrode layer, the second electrode layer, the third electrode layer, the fourth electrode layer, and the fifth electrode layer formed by sequentially stacking the pattern. the process of building wealth;
etching the fourth electrode layer and the fifth electrode layer using the pattern portion as a mask to sequentially form a second lower auxiliary electrode and a second upper auxiliary electrode included in the second auxiliary electrode; and
The first lower auxiliary electrode, the first central auxiliary electrode, and the first upper part included in the first auxiliary electrode are formed by etching the first electrode layer, the second electrode layer, and the third electrode layer using the pattern portion as a mask. Including the step of sequentially forming auxiliary electrodes,
a width of an upper surface of the first central auxiliary electrode is smaller than a width of an upper surface of the first lower auxiliary electrode and wider than a width of an upper surface of the first auxiliary upper electrode;
The width of the upper surface of the second auxiliary lower electrode is narrower than that of the upper surface of the first auxiliary upper electrode and wider than the width of the second auxiliary upper electrode. According to claim 8,
In the step of sequentially forming the first anode electrode and the second anode electrode, the first electrode layer, the second electrode layer, the third electrode layer, the fourth electrode layer, and the fifth electrode layer have a width of the upper surface when the width is Further comprising a step of forming a pattern portion having a structure narrower than the width of
The step of sequentially forming the first auxiliary electrode and the second auxiliary electrode on the substrate,
applying heat to the pattern part after the second upper auxiliary electrode and the second lower auxiliary electrode are sequentially formed to flow the pattern part so as to surround side surfaces of the second auxiliary upper electrode and the second lower auxiliary electrode; and
and removing the pattern portion after the first upper auxiliary electrode, the first center auxiliary electrode, and the first lower auxiliary electrode are sequentially formed using the pattern portion as a mask. delete According to claim 8,
The step of forming a bank to cover both side surfaces of the first auxiliary electrode and the second auxiliary electrode and forming a barrier rib on an upper surface of the second auxiliary electrode is further included before the step of forming the organic light emitting layer;
The method of claim 1 , wherein the organic light emitting layer is not deposited in a space separated from the bank and the barrier rib, and the cathode electrode is deposited in a space separated between the bank and the barrier rib. According to claim 8,
The first anode electrode and the first auxiliary electrode are formed at the same time, the second anode electrode and the second auxiliary electrode are formed at the same time,
The method of claim 1 , wherein the first anode electrode and the first auxiliary electrode are formed after the second anode electrode and the second auxiliary electrode are formed.

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