KR20170047846A - Fabricating method for mems device, mems package and user terminal - Google Patents

Fabricating method for mems device, mems package and user terminal Download PDF

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KR20170047846A
KR20170047846A KR1020150148418A KR20150148418A KR20170047846A KR 20170047846 A KR20170047846 A KR 20170047846A KR 1020150148418 A KR1020150148418 A KR 1020150148418A KR 20150148418 A KR20150148418 A KR 20150148418A KR 20170047846 A KR20170047846 A KR 20170047846A
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South Korea
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pattern
hard mask
mems
mask pattern
mems structure
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KR1020150148418A
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Korean (ko)
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서평보
문상희
이종성
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주식회사 스탠딩에그
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Publication of KR20170047846A publication Critical patent/KR20170047846A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00198—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B5/00—Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/14—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of gyroscopes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2605—Measuring capacitance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Micromachines (AREA)

Abstract

Provided are a manufacturing method of an MEMS device, an MEMS package, and a user terminal. The manufacturing method of the MEMS device comprises: a step of providing a substrate including a silicon oxide layer and a silicon layer formed on the silicon oxide layer; a step of forming a hard mask pattern on the silicon layer; a step of reducing a thickness of a region of the hard mask pattern where stepped portions are required; a step of forming an MEMS structure pattern by performing a first etching of the silicon layer using the hard mask pattern; a step of forming stepped portions on the MEMS structure pattern by performing a second etching on the MEMS structure pattern using the hard mask pattern; and a step of removing a portion of the silicon oxide layer to complete the moveable MEMS structure. The manufacturing method of the MEMS device is capable of improving an alignment property between a plurality of plates of a parallel plate-based MEMS device.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a MEMS device, a MEMS package,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a MEMS device, and more particularly, to a method of manufacturing a parallel-plate based MEMS device, a MEMS package, and a user terminal.

Micro Electro Mechanical Systems (MEMS) are used in the field of automobiles such as satellite, missile, and unmanned airplane, air bag, ESC (Electronic Stability Control) and automobile black box And motion sensors such as game machines, and navigation systems.

In a MEMS device that senses the capacitance between a plurality of plates, the parallel plate method should form a step on a plurality of plates. Conventionally, it has been difficult to realize the alignment characteristics between a plurality of plates in the same manner as the design conditions by forming steps by using a plurality of masks (hard mask or photoresist mask or the like). Further, there is a problem that the sensitivity of the other axis sensitivity deteriorates as the capacitance in the unintended direction is sensed by the gap difference between the plurality of plates.

Korean Patent Registration No. 10-0492105, 2005.05.20

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a MEMS device capable of improving alignment characteristics between a plurality of plates of a parallel plate-based MEMS device.

It is another object of the present invention to provide a method of manufacturing a MEMS device capable of improving the other axis sensitivity characteristics of a parallel plate-based MEMS device.

Another object of the present invention is to provide a MEMS package including a MEMS device manufactured by the above-described method and a user terminal.

The technical objects of the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a method of manufacturing a MEMS device, comprising: providing a substrate including a silicon oxide layer and a silicon layer formed on the silicon oxide layer; Forming a pattern of a hard mask pattern; reducing a thickness of a region of the hard mask pattern where a step difference is required; forming a MEMS structure pattern by first etching the silicon layer using the hard mask pattern; Forming a step on the MEMS structure pattern by secondary etching the pattern of the MEMS structure, and completing the movable MEMS structure by removing a part of the silicon oxide layer.

In some embodiments of the present invention, the hard mask pattern may comprise silicon oxide.

In some embodiments of the present invention, the step of reducing the thickness of the region of the hard mask pattern that requires a step difference includes: forming a photoresist pattern for exposing a region of the hard mask pattern, And etching the region of the hard mask pattern where a step is required by using the photoresist pattern.

In some embodiments of the present invention, the step of forming the step on the MEMS structure pattern may include removing the reduced-thickness portion of the hard mask pattern, and patterning the MEMS structure pattern using a second hard mask pattern, Thereby forming a step on the MEMS structure pattern.

In some embodiments of the present invention, the method further comprises forming a metal pad on the silicon layer, wherein forming the hard mask pattern comprises: forming a hard mask pattern on the silicon layer and the metal pad have.

In some embodiments of the present invention, the MEMS structure may have a Parallel-Plate based structure.

In addition, the pattern portion having the first thickness of the MEMS structure corresponds to the movable plate, and the pattern portion having the second thickness may correspond to the fixed plate.

According to another aspect of the present invention, there is provided a method of manufacturing a MEMS device, including: providing a substrate including a silicon oxide layer and a silicon layer formed on the silicon oxide layer; A method of manufacturing a semiconductor device, comprising: forming a pattern; reducing a thickness of a portion of the hard mask pattern; forming a MEMS structure pattern by first etching the silicon layer using the hard mask pattern; A step of secondly etching the MEMS structure pattern to reduce a thickness of a part of the pattern of the MEMS structure, and a step of removing a part of the silicon oxide layer to complete a moveable MEMS structure.

According to another aspect of the present invention, there is provided a MEMS package including a MEMS device manufactured by any one of the above-described methods.

According to another aspect of the present invention, there is provided a user terminal comprising a MEMS device manufactured by any one of the above-described methods.

Other specific details of the invention are included in the detailed description and drawings.

According to the method of manufacturing a MEMS device of the present invention, since a MEMS structure pattern is formed by using one hard mask pattern, the alignment between a plurality of plates of a parallel plate-based MEMS device is not affected by alignment between a plurality of masks. The characteristics can be improved.

Further, as the alignment characteristics between the plurality of plates are improved, the capacitance in the unintended direction is not sensed, and the other axis sensitivity characteristic of the parallel plate-based MEMS device can be improved.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a flow chart schematically showing a method of manufacturing a MEMS device according to an embodiment of the present invention.
2 to 7 are cross-sectional views schematically showing a method of manufacturing a MEMS device according to an embodiment of the present invention.
8 is a view schematically showing a MEMS device manufactured by a method of manufacturing a MEMS device according to an embodiment of the present invention.
9 is a view schematically showing a MEMS package including a MEMS device manufactured by a method of manufacturing a MEMS device according to an embodiment of the present invention.
10 to 11 are views schematically showing a sensor hub including a MEMS device manufactured by a method of manufacturing a MEMS device according to an embodiment of the present invention.
12 is a view schematically showing a user terminal including a MEMS device manufactured by the method of manufacturing a MEMS device according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. However, it is to be understood that the present invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It is to be understood by those of ordinary skill in the art that the present invention is not limited to the above embodiments, but may be modified in various ways. Like reference numerals refer to like elements throughout the specification.

Although the first, second, etc. are used to describe various elements, components and / or sections, it is needless to say that these elements, components and / or sections are not limited by these terms. These terms are only used to distinguish one element, element or section from another element, element or section. Therefore, it goes without saying that the first element, the first element or the first section mentioned below may be the second element, the second element or the second section within the technical spirit of the present invention.

It is to be understood that when an element or layer is referred to as being "on" or " on "of another element or layer, All included. On the other hand, a device being referred to as "directly on" or "directly above" indicates that no other device or layer is interposed in between. The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figure, an element described as " below or beneath "of another element may be placed" above "another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, in which case spatially relative terms can be interpreted according to orientation.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. In addition, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. The terms " comprises "and / or" comprising "used in the specification do not exclude the presence or addition of one or more other elements in addition to the stated element.

Hereinafter, an acceleration sensor of various MEMS devices will be described as an example of the present invention. However, it should be understood that the present invention is not limited thereto. Those skilled in the art will appreciate that the present invention is applicable not only to accelerometers but also to a plurality of parallel plate-based plates, such as gyro sensors, pressure sensors, It is to be understood that the present invention can be practically applied to any MEMS device that senses a plurality of MEMS devices without changing their technical ideas or essential features.

FIG. 1 is a flow chart schematically illustrating a method of manufacturing a MEMS device according to an embodiment of the present invention, and FIGS. 2 to 5 are cross-sectional views schematically showing a method of manufacturing a MEMS device according to an embodiment of the present invention.

Referring to Figs. 1 to 5, first, in step S10, a substrate is provided. The substrate may include a lower silicon layer 110, an upper silicon layer 130, and a silicon oxide layer 120 interposed between the lower silicon layer 110 and the upper silicon layer 130. The silicon oxide layer 120 may function as an insulating layer. The substrate may be provided by oxidizing a silicon substrate 110 to form a silicon oxide layer 120 and depositing a silicon layer 130 on the silicon oxide layer 120. Alternatively, a silicon-on-insulator (SOI) substrate may be provided. The MEMS structure described below may be formed in the device layer 130 of the SOI substrate.

Then, in step S20, a metal pad 140 is formed on the silicon layer 130. [ For example, the metal pad 140 may include, but is not limited to, germanium (Ge). The metal pad 140 may function as a bonding pad for bonding the sensor wafer 100 and the cap wafer 200. The metal pad 140 may be bonded by eutectic bonding. As shown, the metal pad 140 may be formed with the MEMS structure in the manufacturing process of the sensor wafer 100, or may be formed after the fabrication of the sensor wafer 100 is completed, though not clearly shown.

Subsequently, in step S30, a hard mask pattern 155 is formed on the silicon layer 130 and the metal pad 140. Then, For example, the hard mask pattern 155 may include, but is not limited to, silicon oxide. A silicon oxide layer 150 is formed on the silicon layer 130 and the metal pad 140 to form a hard mask pattern 155 and a photoresist pattern 160 is formed on the silicon oxide layer 150 And the silicon oxide layer 150 may be etched using the photoresist pattern 160.

Subsequently, in step S40, the thickness of the hard mask pattern 155 in which the step is required is reduced. A step of the hard mask pattern 155 on the silicon layer 130 and the hard mask pattern 155 is formed so as to form a portion 151 having a different thickness (i.e., a small thickness) A photoresist pattern 170 for exposing a necessary region is formed and a region of the hard mask pattern 155 in which a step is required can be etched using the photoresist pattern 170. [

Subsequently, in step S50, the silicon layer 130 is firstly etched using the hard mask pattern 155 to form the MEMS structure pattern 135. Next, as shown in FIG. For example, the primary etching can be, but not limited to, a deep reactive ion etching (DRIE) process. Subsequently, in step S60, the MEMS structure pattern 135 is secondarily etched using the hard mask pattern 155 to form a step on the MEMS structure pattern 135. Next, as shown in FIG. Specifically, only the portion 151 for forming the step of the hard mask pattern 155 is removed and the remaining portion is maintained, and a part of the MEMS structure pattern 135 covered by the portion 151 is exposed. In order to remove the portion 151, a front surface etching (Blanket Etching) process or the like may be used. The MEMS structure pattern 135 is then etched using only the remaining hard mask pattern 155 to form the portion 136 of the MEMS structure pattern 135 having a different thickness. For example, the second etching may use a recess etching process, but the present invention is not limited thereto.

Subsequently, in step S70, a part of the silicon oxide layer 120 under the MEMS structure pattern 135 is released to form a silicon oxide pattern 125, and a movable MEMS structure is completed. A vapor etching process may be used to remove the silicon oxide layer 120, but is not limited thereto. The MEMS structure may have a parallel plate-based structure. The pattern portion 136 of the MEMS structure having a first thickness (relatively small thickness) functions as a movable plate, and a portion of the pattern having a second thickness (which is the same thickness as the other portion) It can function as a plate (Fixed Plate).

8 is a view schematically showing a MEMS device manufactured by a method of manufacturing a MEMS device according to an embodiment of the present invention.

Referring to FIG. 8, the MEMS device 1 includes a sensor wafer 100 and a cap wafer 200.

The sensor wafer 100 can be manufactured by the manufacturing method of the MEMS device described with reference to Figs. 1 to 7. The sensor wafer 100 may include a MEMS structure having a parallel plate-based structure. A portion of the MEMS structure may be used for z-axis (i.e., vertical axis) sensing (right side of Figure 8) and the other portion may be used for x and / or y axis ). Although not explicitly shown, a mass may be associated with the movable plate 136 of the MEMS structure. The mass is movable according to an external force (or an inertial force due to an external force). When an external force is applied to the MEMS device 1, the overlapping area between the movable plate 136 and the fixed plate 135 is changed according to the movement of the mass, and the acceleration Can be sensed.

The cap wafer 200 may be formed on the sensor wafer 100. The sensor wafer 100 and the cap wafer 200 may be bonded by a bonding pad.

9 is a view schematically showing a MEMS package including a MEMS device manufactured by a method of manufacturing a MEMS device according to an embodiment of the present invention.

9, a MEMS package 1000 includes a PCB substrate 1100, a MEMS device 1200 stacked and bonded on a PCB substrate 1100, and an ASIC device 1300. The MEMS device 1200 may be formed substantially the same as the MEMS device described with reference to FIG. Although FIG. 9 shows the wire bonding method, the present invention is not limited thereto, and a flip chip method may be used.

10 to 11 are views schematically showing a sensor hub including a MEMS device manufactured by a method of manufacturing a MEMS device according to an embodiment of the present invention.

Referring to FIG. 10, the sensor hub 2000 may include a processing device 2100, a MEMS device 2200, and an application specific integrated circuit (ASIC) device 2300. The MEMS device 2200 can be formed substantially the same as the MEMS device 1 described with reference to Fig. The ASIC device 2300 can process the sensing signal of the MEMS device 2200. The processing device 2100, on behalf of the application processor, may serve as a coprocessor for professionally performing sensor data processing.

Referring to FIG. 11, the sensor hub 3000 may include a plurality of MEMS devices 3200 and 3400 and a plurality of ASIC devices 3300 and 3500. At least one of the plurality of MEMS devices 3200 and 3400 may be formed substantially the same as the MEMS device 1 described with reference to FIG. The first MEMS device 3200 may be an acceleration sensor and the second MEMS device 3400 may be a gyro sensor, but is not limited thereto. The plurality of ASIC devices 3300 and 3500 can process the sensing signals of the corresponding MEMS devices 3200 and 3400, respectively. The processing device 3100, on behalf of the application processor, may function as a coprocessor to professionally perform sensor data processing. As shown, three or more MEMS devices and ASIC devices may be provided in the sensor hub 3000.

12 is a view schematically showing a user terminal including a MEMS device manufactured by the method of manufacturing a MEMS device according to an embodiment of the present invention.

12, the user terminal 200 includes a wireless communication unit 4100, an A / V input unit 4200, a user input unit 4300, a sensing unit 4400, an output unit 4500, a storage unit 4600, An interface unit 4700, a control unit 48000, and a power supply unit 4900.

The wireless communication unit 4100 can wirelessly communicate with an external device. The wireless communication unit 4100 may wirelessly communicate with an external device using various wireless communication methods such as mobile communication, WiBro, WiFi, Bluetooth, Zigbee, ultrasound, infrared, and RF . The wireless communication unit 4100 may transmit data and / or information received from an external device to the control unit 4800 and may transmit data and / or information transmitted from the control unit 4800 to the external device. For this purpose, the wireless communication unit 4100 may include a mobile communication module 4110 and a short-range communication module 4120.

Also, the wireless communication unit 4100 can acquire the location information of the user terminal 4000 including the location information module 4130. The location information of the user terminal 4000 may be provided from, for example, a GPS positioning system, a WiFi positioning system, a cellular positioning system, or beacon positioning systems, but is not limited thereto, Lt; / RTI > The wireless communication unit 4100 can transmit the position information received from the positioning system to the control unit 4800. [

The A / V input unit 4200 is for inputting video or audio signals, and may include a camera module 4210 and a microphone module 4220. The camera module 4210 may include an image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) sensor, a CCD (Charge Coupled Device) sensor, or the like.

The user input unit 4300 receives various information from the user. The user input unit 4300 may include input means such as a key, a button, a switch, a touch pad, and a wheel. When the touch pad has a mutual layer structure with a display module 4510 described later, a touch screen can be configured.

The sensor unit 4400 detects the state of the user terminal 4000 or the state of the user. The sensing unit 4400 may include sensing means such as a touch sensor, a proximity sensor, a pressure sensor, a vibration sensor, a geomagnetic sensor, a gyro sensor, an acceleration sensor, and a biometric sensor. The sensing unit 240 may be used for user input.

The output unit 4500 notifies the user of various kinds of information. The output unit 4500 can output information in the form of text, image, or voice. To this end, the output unit 4500 may include a display module 4510 and a speaker module 4520. The display module 4510 may be provided in any form well known in the PDP, LCD, TFT LCD, OLED, flexible display, three-dimensional display, electronic ink display, or the art. The output unit 4500 may further comprise any type of output means well known in the art.

The storage unit 4600 stores various data and commands. The storage unit 4600 may store system software and various applications for operation of the user terminal 4000. The storage unit 4600 may include RAM, ROM, EPROM, EEPROM, flash memory, a hard disk, a removable disk, or any form of computer readable recording medium known in the art.

The interface unit 4700 serves as a channel with an external device connected to the user terminal 4000. The interface unit 4700 receives data and / or information from an external device, receives power and transmits the received data and / or information to the internal components of the user terminal 4000, Or supply internal power. The interface unit 4700 may include, for example, a wired / wireless headset port, a charging port, a wired / wireless data port, a memory card port, a universal serial bus An audio input / output port, a video input / output (I / O) port, and the like.

The control unit 4800 controls the overall operation of the user terminal 4000 by controlling other components. The control unit 4800 can execute the system software stored in the storage unit 4600 and various applications. The control unit 2800 may include an integrated circuit such as a microprocessor, a microcontroller, a digital signal processing core, a graphics processing core, an application processor, and the like.

The power supply unit 4900 includes a wireless communication unit 4100, an A / V input unit 4200, a user input unit 4300, a sensor unit 4400, an output unit 4500, a storage unit 4600, an interface unit 4700, And supplies power necessary for the operation of the control unit 4800. [ The power supply 4900 may include an internal battery.

The MEMS device 1 described with reference to Fig. 8, or the sensor hub 2000, 3000 described with reference to Figs. 10 to 11, may be provided in the sensor portion 4400. Fig.

The methods described in connection with the embodiments of the present invention may be implemented with software modules executed by a processor. The software modules may reside in RAM, ROM, EPROM, EEPROM, flash memory, hard disk, removable disk, CD-ROM, or any form of computer readable recording medium known in the art .

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

Claims (10)

Providing a substrate comprising a silicon oxide layer and a silicon layer formed on the silicon oxide layer;
Forming a hard mask pattern on the silicon layer;
Reducing a thickness of a region of the hard mask pattern where steps are required;
Forming a MEMS structure pattern by first etching the silicon layer using the hard mask pattern;
Forming a step on the pattern of the MEMS structure by performing a second etching process on the pattern of the MEMS structure using the hard mask pattern; And
And removing a portion of the silicon oxide layer to complete a moveable MEMS structure. The method according to claim 1,
Wherein the hard mask pattern comprises silicon oxide. The method according to claim 1,
Wherein the step of reducing the thickness of the region of the hard mask pattern,
Forming a photoresist pattern on the silicon layer and the hard mask pattern, the photoresist pattern exposing a region of the hard mask pattern that requires a step,
And etching the region of the hard mask pattern where steps are required using the photoresist pattern. The method according to claim 1,
The step of forming a step in the MEMS structure pattern includes:
Removing the reduced portion of the hard mask pattern and secondarily etching the MEMS structure pattern using the remaining hard mask pattern to form a step in the MEMS structure pattern. The method according to claim 1,
Further comprising forming a metal pad on the silicon layer,
Wherein forming the hard mask pattern comprises: forming a hard mask pattern on the silicon layer and the metal pad. The method according to claim 1,
Wherein the MEMS structure has a parallel-plate based structure. The method according to claim 6,
Wherein a pattern portion of the MEMS structure having a first thickness corresponds to a movable plate and a pattern portion having a second thickness corresponds to a fixed plate. Providing a substrate comprising a silicon oxide layer and a silicon layer formed on the silicon oxide layer;
Forming a hard mask pattern on the silicon layer;
Reducing a thickness of a part of the hard mask pattern;
Forming a MEMS structure pattern by first etching the silicon layer using the hard mask pattern;
Etching the MEMS structure pattern using the hard mask pattern to reduce a thickness of a part of the pattern of the MEMS structure; And
And removing a portion of the silicon oxide layer to complete a moveable MEMS structure. 9. A MEMS package comprising a MEMS device manufactured by the method of any one of claims 1 to 8. 9. A user terminal comprising a MEMS device manufactured by the method of any one of claims 1 to 8.
KR1020150148418A 2015-10-26 2015-10-26 Fabricating method for mems device, mems package and user terminal KR20170047846A (en)

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