KR20170041238A - Pattern formation method, protective-film-forming composition, electronic device manufacturing method, and electronic device - Google Patents

Abstract

The present invention relates to a pattern forming method which is excellent in focus margin and exposure margin and can form a pattern in which line edge roughness is suppressed, and a protective film forming composition suitably used in the pattern forming method . The pattern forming method of the present invention comprises a step of applying a sensitizing actinic ray or radiation-sensitive resin composition onto a substrate to form a sensitizing actinic ray or radiation-sensitive film, a step of coating a composition for forming a protective film with the actinic ray- A step of forming a protective film by coating on a protective film, a step of exposing a sensitizing actinic ray or radiation-sensitive film covered with the protective film, and a step of exposing the exposed actinic ray or radiation-sensitive film to a developer containing an organic solvent Wherein the protective film comprises a compound (A) containing at least one group or a bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond ) And a resin (X).

Description

TECHNICAL FIELD [0001] The present invention relates to a pattern forming method, a composition for forming a protective film, a method of manufacturing an electronic device, and an electronic device.

INDUSTRIAL APPLICABILITY The present invention can be suitably used in a semiconductor manufacturing process such as IC, a process for producing a circuit substrate such as a liquid crystal and a thermal head, a pattern forming process used for lithography process of other photofabrication, A composition for forming a protective film, a method for manufacturing an electronic device, and an electronic device. The present invention relates to a pattern forming method suitable for exposure with an immersion projection exposure apparatus, a composition for forming a protective film used in the pattern forming method, a method of manufacturing an electronic device, and an electronic device.

After the resist for the KrF excimer laser (248 nm), an image forming method called chemical amplification is used as an image forming method of a resist in order to compensate for a decrease in sensitivity due to light absorption. An example of the positive-type chemical amplification image forming method will be described. An acid generator is decomposed by exposure to generate an acid, and the generated acid is used as a reaction catalyst in a post exposure bake (PEB) An insoluble group is changed to an alkali-soluble group, and an exposed portion is removed by alkali development.

On the other hand, a negative type image forming method (hereinafter also referred to as an "NTI process") using a developer containing an organic solvent (hereinafter also referred to as an "organic solvent developer") as well as a positive type, (See, for example, Patent Documents 1 and 2). For example, in Patent Document 2, in pattern formation by alkaline development using a conventional negative resist composition, line width width (LWR) and focus margin (LWR), which are presumed to be caused by swelling at the time of development In the negative pattern formation method using a developing solution containing an organic solvent, a specific compound containing at least one of a fluorine atom and a silicon atom Is used as a photoresist.

In addition, in order to miniaturize a semiconductor device, the exposure light source has become shorter in wavelength and the projection lens has become higher in NA (high NA), and an exposure apparatus using an ArF excimer laser having a wavelength of 193 nm as a light source has been developed. As a technique for further increasing the resolving power, a so-called immersion method in which a projection lens and a sample are filled with a liquid having a high refractive index (hereinafter also referred to as "immersion liquid") has been proposed.

When the chemically amplified resist is applied to liquid immersion lithography, the resist layer comes into contact with the immersion liquid at the time of exposure, so that it is pointed out that the resist layer is altered and that a component that adversely affects the immersion liquid from the resist layer is spilled out . Patent Document 3 describes an example in which the resist performance is changed by immersing the resist for ArF exposure in water before and after exposure, and points out that this is a problem in liquid immersion lithography.

As a solution to avoid such a problem, there has been known a method of providing a protective film (hereinafter also referred to as "top coat") between a resist and a lens so that the resist and water are not in direct contact (see, 6).

In the NTI process in which excess acid is generated in the surface layer of the resist by decomposition of the acid generator by exposure to light, an excessive deprotection reaction of the acid decomposable group is caused in the surface layer and the exposed portion is left as a pattern after development, . When the pattern becomes a T-top shape, performance such as focus depth (DOF) and exposure latitude (EL) deteriorates, for example. Thus, for example, Patent Documents 7 and 8 disclose a technique of adding basicity to a topcoat layer covering a resist film for the purpose of neutralizing excess acid generated on the resist surface.

Patent Document 1: JP-A-2008-292975 Patent Document 2: JP-A No. 2011-141494 Patent Document 3: International Publication No. 04-068242 Patent Document 4: International Publication No. 04-074937 Patent Document 5: International Publication No. 05-019937 Patent Document 6: JP-A-2005-109146 Patent Document 7: JP-A-2013-61647 Patent Document 8: JP-A-2013-61648

As a result of intensive research conducted by the present inventors, it has been found that when basicity is added to the topcoat layer, an excess of the acid moves from the resist surface layer to the topcoat layer, while the basicity shifts from the topcoat layer to the resist layer . As a result, it was found that the pattern was reduced and the line edge roughness (LER) deteriorated. This is a serious problem in the NTI process of leaving the exposure as a pattern after development.

An object of the present invention is to provide a negative type image forming process using an NTI process, that is, an organic solvent developer, which is excellent in a focus margin (DOF) and an exposure margin (EL) , And a composition for forming a protective film suitably used in the pattern forming method. The present invention also provides an electronic device manufacturing method including the pattern forming method, and an electronic device manufactured by the electronic device manufacturing method.

The present invention, in one aspect, is as follows.

[1] A process for producing a photothermographic material, comprising the steps of: (a) applying a sensitizing actinic ray or radiation-sensitive resin composition onto a substrate to form a sensitizing actinic ray or radiation-

(b) a step of applying a composition for forming a protective film onto the above-mentioned actinic ray-sensitive or radiation-sensitive film to form a protective film,

(c) exposing the sensitizing actinic radiation or radiation-sensitive film coated with the protective film, and

(d) developing the exposed actinic ray sensitive or radiation-sensitive film with a developer containing an organic solvent,

(A) comprising at least one group or a bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond, and a resin (X) ≪ / RTI > Provided that the compound (A) is neither a chain amide, a cyclic amide, an aromatic amine, a chain aliphatic amine or a cyclic aliphatic amine.

[2] The pattern forming method according to [1], wherein the molecular weight of the compound (A) is 3,000 or less.

[3] The pattern forming method according to [1] or [2], wherein the compound (A) is a compound containing at least 8 carbon atoms.

[4] The pattern forming method according to any one of [1] to [3], wherein the content of the compound (A) relative to the total solid content in the protective film is 0.1 to 30 mass%.

[5] The pattern forming method according to any one of [1] to [4], wherein the protective film has a thickness of 10 to 300 nm.

[6] The pattern forming method according to any one of [1] to [5], wherein the compound (A) is a compound having at least one ether bond.

[7] The pattern forming method according to [6], wherein the compound (A) is a compound having a structure represented by the following general formula (1).

[Chemical Formula 1]

Wherein,

R ₁₁ represents an alkylene group which may have a substituent,

n represents an integer of 2 or more,

* Indicates a combined hand.

[8] The pattern forming method according to any one of [1] to [7], wherein the resin (X) has a fluorine atom content of 20 mass% or less.

[9] The method may further include a step of heating the substrate coated with the actinic ray-sensitive or radiation-sensitive film and the protective film after the step (b) for forming the protective film and before the step (c) Wherein the pattern forming method comprises the steps of:

[10] A composition for forming a protective film used for forming a protective film covering a sensitive active ray-sensitive or radiation-sensitive film, which comprises a compound (A) having a structure represented by the following general formula (1) A composition for forming a protective film. Provided that the compound (A) is neither a chain amide, a cyclic amide, an aromatic amine, a chain aliphatic amine or a cyclic aliphatic amine.

(2)

Wherein,

R ₁₁ represents an alkylene group which may have a substituent,

n represents an integer of 2 or more,

* Indicates a combined hand.

[11] A method of manufacturing an electronic device, comprising the pattern formation method according to any one of [1] to [9].

[12] An electronic device manufactured by the method for manufacturing an electronic device according to [11].

According to the present invention, there is provided a pattern forming method capable of forming a pattern having excellent focus margin (DOF) and exposure margin (EL) and suppressing line edge roughness (LER) It is possible to provide a protective film forming composition which can be suitably used. Further, according to the present invention, it is possible to provide an electronic device manufacturing method including the pattern forming method, and an electronic device manufactured by the electronic device manufacturing method.

Hereinafter, embodiments of the present invention will be described in detail.

In the notation of the group (atomic group) in the present specification, the notation in which substitution and non-substitution are not described includes a group (atomic group) having a substituent group together with a group (atomic group) having no substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (an unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

The term "actinic ray" or "radiation " in this specification means, for example, a line spectrum of mercury lamps, far ultraviolet rays represented by an excimer laser, extreme ultraviolet rays (EUV light), X rays, . In the present invention, light means an actinic ray or radiation.

The term "exposure" in this specification refers to not only exposure by deep ultraviolet rays, X-rays, EUV light, etc. represented by mercury lamps and excimer lasers, Is also included in the exposure.

Hereinafter, the pattern forming method of the present invention, the protective film forming composition suitably used in the pattern forming method, and the actinic ray-sensitive or radiation-sensitive resin composition will be described in detail.

<Composition for forming protective film>

The pattern forming method of the present invention includes a protective film forming step of forming a protective film so as to cover an actinic ray-sensitive or radiation-sensitive film in an NTI process for forming a negative type image using an organic solvent developer. The protective film forming composition used for forming this protective film contains the following compound (A) and resin (X). The composition for forming a protective film preferably contains a solvent in order to uniformly form a film on the actinic ray-sensitive or radiation-sensitive film. The protective film forming composition may further contain a surfactant.

[Compound (A)]

The compound (A) is a compound containing at least one of a group or a bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond. Provided that the compound (A) is neither a chain amide, a cyclic amide, an aromatic amine, a chain aliphatic amine or a cyclic aliphatic amine.

As described above, by neutralizing an acid excessively generated in the surface layer of the resist by exposure to basicity added to the topcoat layer, the pattern shape is prevented from becoming a T-top, and deterioration of DOF and EL performance is suppressed (See Patent Documents 7 and 8).

However, as a result of extensive studies by the present inventors, the following problems have been found. That is, the basic difference is neutralized by neutralizing the acid transferred from the surface layer of the resist to the topcoat layer, and the basicity shifts from the topcoat layer to the resist layer, and the acid in the resist exposed portion is neutralized. As a result, it was found that the film of the pattern was reduced and the LER deteriorated.

As a result of further studies by the present inventors, it has been found that a compound having at least one group or a bond selected from an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond, (A) is added to the top coat layer, it has been found that the pattern shape can be prevented from becoming a T-top shape and the pattern can be formed with reduced LER by suppressing film reduction while improving DOF and EL performance.

Since the compound (A) is neither a chain amide, a cyclic amide, an aromatic amine, a chain aliphatic amine, or a cyclic aliphatic amine and has no basicity, neutralization by neutralizing an acid such as a basic? It does not. The reason why the addition of the compound (A) reduces the LER by suppressing the film reduction while improving the DOF and EL performance is not necessarily clear, but is presumed as follows. That is, the ether bond, the thioether bond, the hydroxyl group, the thiol group or the ketone bond contained in the compound (A) trap the acid by interaction with the acid without causing neutralization, have. As a result, the compound (A) traps the excess acid which has migrated from the surface layer of the resist to the topcoat layer in the topcoat layer. On the other hand, since the compound (A) which has migrated from the top coat layer to the resist layer does not ignite the acid present in the exposed portion, the acid generated in the exposed portion is an acid as it is, . As a result, it is presumed that it becomes possible to suppress the pattern from becoming a T-top shape, to improve DOF and EL performance, to suppress film reduction, and to reduce LER.

The compound (A) will be described in more detail.

As described above, the compound (A) is a compound containing at least one of a group or a bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond. Since the oxygen or sulfur atom contained in these groups or bonds has a non-covalent electron pair, the acid can be trapped by the interaction with the acid diffused from the actinic ray-sensitive or radiation-sensitive film.

The compound (A) is a compound having no basicity. The pKa of the conjugate acid of the compound (A) is preferably 0 or less, more preferably -1 or less, further preferably -2 or less, and particularly preferably -3 or less. The lower limit value of pKa is not particularly limited, and is, for example, -15 or more. In the present invention, the pKa value is represented as a value calculated by ACD / Chem Sketch (ACD / Labs 8.00 Release Product Version: 8.08). The compound (A) is preferably a neutral compound. The pH is preferably 6.0 to 8.0, more preferably 6.5 to 7.5, even more preferably 6.8 to 7.2, and particularly preferably 6.9 to 7.1.

It is preferable that the compound (A) does not have a functional group having a nitrogen atom having a lone pair of electrons with a small contribution of the pi conjugation. The nitrogen atom having a lone pair of electrons with a small contribution of the pi conjugation includes, for example, a nitrogen atom having a partial structure represented by the following general formula. Examples of the structure (compound) having a functional group having a nitrogen atom and having a lone electron pair having a small contribution of the pi conjugation include a chain amide, a cyclic amide, an aromatic amine, a chain aliphatic amine and a cyclic aliphatic amine.

(3)

Specific examples of the cyclic and cyclic amides include N, N-bis (2-hydroxyethyl) pivalamide, N, N-diethylacetamide, N1, N1, N3, N3-tetrabutylmalone Amide, 1-methylazepan-2-one, 1-allyazepan-2-one and tert-butyl 1,3-dihydroxy- 2- (hydroxymethyl) propan- .

Specific examples of the aromatic amine include, for example, pyridine, and di-tert-butylpyridine.

Specific examples of the chain-like aliphatic amine include, for example, triisopropanolamine, n-tert-butyldiallylethanolamine, tris (2-acetoxy-ethyl) amine, 2,2 ' (Ethene-1,2-diylbis (azetriyl)) tetraethanol, 2- (butylamino) ethanol, 2,2 ', 2 "-nitrilotriethanol and the like.

Specific examples of the cyclic aliphatic amine include, for example, 1- (tert-butoxycarbonyl) -4-hydroxypiperidine, tert-butyl 1-pyrrolidinecarboxylate, tert- Imidazole-1-carboxylate, di-tert-butylpiperazine-1,4-dicarboxylate, and N (2-acetoxy-ethyl) morpholine.

As described above, the compound (A) contains at least one group or a bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond. In one aspect of the present invention, the compound (A) preferably has two or more groups or bonds selected from the group, more preferably three or more, and more preferably four or more. In this case, the groups or bonds selected from the ether bond, the thioether bond, the hydroxyl group, the thiol group, the carbonyl bond and the ester bond included in the compound (A) may be mutually the same or different.

In one aspect of the present invention, the compound (A) preferably has a molecular weight of 3000 or less, more preferably 2500 or less, more preferably 2000 or less, and particularly preferably 1500 or less. The molecular weight (weight average molecular weight) of the compound (A) is a standard polystyrene reduced value obtained from Gel Permeation Chromatography (GPC) under the following conditions.

Column type: TSK gel Multipore HXL-M (manufactured by Tosoh Corporation, 7.8 mm ID x 30.0 cm)

Solvent: THF (tetrahydrofuran)

Column temperature: 40 ° C

· Flow rate: 1 ml / min

Sample injection volume: 10 μl

Device name: HLC-8120 (manufactured by TOSOH CORPORATION)

In one embodiment of the present invention, the number of carbon atoms contained in the compound (A) is preferably 8 or more, more preferably 9 or more, and more preferably 10 or more.

In one embodiment of the present invention, the number of carbon atoms contained in the compound (A) is preferably 30 or less, more preferably 20 or less, and even more preferably 15 or less.

In one embodiment of the present invention, the compound (A) is preferably a compound having a boiling point of 200 ° C or higher, more preferably a compound having a boiling point of 220 ° C or higher, and more preferably a compound having a boiling point of 240 ° C or higher .

In an embodiment of the present invention, the compound (A) is preferably a compound having an ether bond, more preferably two or more ether bonds, more preferably three or more, and four or more Is more preferable.

In one aspect of the present invention, it is more preferable that the compound (A) contains a repeating unit containing an oxyalkylene structure represented by the following general formula (1).

[Chemical Formula 4]

Wherein,

R ₁₁ represents an alkylene group which may have a substituent,

n represents an integer of 2 or more,

* Indicates a combined hand.

The number of carbon atoms of the alkylene group represented by R ₁₁ in the general formula (1) is not particularly limited, but is preferably from 1 to 15, more preferably from 1 to 5, still more preferably 2 or 3, Particularly preferred. When the alkylene group has a substituent, the substituent is not particularly limited, and for example, an alkyl group (preferably having 1 to 10 carbon atoms) is preferable.

n is preferably an integer of 2 to 20, and more preferably 10 or less, because the DOF becomes larger.

The average value of n is preferably 20 or less, more preferably from 2 to 10, even more preferably from 2 to 8, and particularly preferably from 4 to 6, because the DOF becomes larger. Here, the "average value of n" means the value of n determined by measuring the weight average molecular weight of the compound (A) by GPC and determining the weight average molecular weight to match with the general formula. If n is not an integer, rounding is used.

The plurality of R &lt; ₁₁ &gt; present may be the same or different.

The compound having a partial structure represented by the general formula (1) is preferably a compound represented by the following general formula (1-1) for the reason that the DOF becomes larger.

[Chemical Formula 5]

Wherein,

The definition of R _11, specific examples and a suitable embodiment is the same as R ₁₁ in the above-mentioned general formula (1).

R ₁₂ and R ₁₃ each independently represent a hydrogen atom or an alkyl group. The number of carbon atoms of the alkyl group is not particularly limited, but is preferably 1 to 15. R ₁₂ and R ₁₃ may be bonded to each other to form a ring.

m represents an integer of 1 or more. m is preferably an integer of 1 to 20, and more preferably 10 or less, because the DOF becomes larger.

The average value of m is preferably 20 or less, more preferably from 1 to 10, even more preferably from 1 to 8, and particularly preferably from 4 to 6, because the DOF becomes larger. Here, the "average value of m" agrees with the above-mentioned "average value of n ".

When m is 2 or more, plural R _{11 s} present may be the same or different.

In one aspect of the present invention, the compound having a partial structure represented by the general formula (1) is preferably an alkylene glycol having at least two ether linkages.

The compound (A) may be a commercially available product or may be synthesized by a known method.

Specific examples of the compound (A) are shown below, but the present invention is not limited thereto.

[Chemical Formula 6]

(7)

The content of the compound (A) is preferably 0.1 to 30 mass%, more preferably 1 to 25 mass%, further preferably 2 to 20 mass%, and more preferably 3 to 18 mass%, based on the total solid content in the protective film %, And most preferably 5 to 15% by mass.

[Resin (X)]

The resin (X) which can be suitably used for the composition for forming a protective film is preferably transparent to the exposure light source to be used, since light passes through the protective film to reach the actinic ray-sensitive or radiation-sensitive film at the time of exposure. When used for ArF liquid immersion lithography, it is preferable that the resin has substantially no aromatic group in terms of transparency to ArF light.

In one embodiment of the present invention, the resin (X) preferably has a fluorine atom content of 20 mass% or less. Specifically, the content of fluorine atoms in the resin (X) is preferably 20% by mass or less, more preferably 10% by mass or less, ideally substantially 0 mass% %to be.

In another embodiment of the present invention, the resin (X) is preferably a resin having a CH ₃ partial structure in the side chain portion.

Here, the CH ₃ partial structure of the side chain portion in the resin (hereinafter, simply referred to as "side chain CH ₃ partial structure") includes a CH ₃ partial structure of an ethyl group, a propyl group or the like.

On the other hand, the methyl group directly bonded to the main chain of the resin (X) (for example, the? -Methyl group of the repeating unit having a methacrylic acid structure) is not included in the CH ₃ partial structure in the present invention.

More specifically, when the resin (X) contains a repeating unit derived from a monomer having a polymerizable moiety having a carbon-carbon double bond, such as a repeating unit represented by the following formula (M) And R ₁₁ to R ₁₄ are CH ₃ "itself", the CH ₃ is not included in the CH ₃ partial structure of the side chain portion in the present invention.

On the other hand, CH ₃ partial structure exists through any atom from the CC main chain, it is assumed for the CH ₃ a partial structure of the present invention. For example, when R ₁₁ is an ethyl group (CH ₂ CH ₃ ), it is assumed that the CH ₃ partial structure in the present invention has "one".

[Chemical Formula 8]

In the above general formula (M)

R ₁₁ to R ₁₄ each independently represent a side chain moiety.

Examples of R ₁₁ to R _{14 in the} side chain moiety include a hydrogen atom and a monovalent organic group.

Examples of the monovalent organic group for R ₁₁ to R ₁₄ include an alkyl group, a cycloalkyl group, an aryl group, an alkyloxycarbonyl group, a cycloalkyloxycarbonyl group, an aryloxycarbonyl group, an alkylaminocarbonyl group, a cycloalkylaminocarbonyl group, Carbonyl group and the like, and these groups may further have a substituent.

The resin (X) is preferably a resin having a repeating unit having a CH ₃ partial structure in the side chain portion. The repeating unit represented by the following general formula (II) and the repeating unit represented by the following general formula It is more preferable to have at least one repeating unit (x) among the repeating units appearing. Particularly when KrF, EUV and electron beam (EB) are used as the exposure light source, the resin (X) may suitably contain the repeating unit represented by the general formula (III).

Hereinafter, the repeating unit represented by formula (II) will be described in detail.

[Chemical Formula 9]

In formula (II), X _b1 represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom, and R ₂ represents an organic group stable to an acid having at least one CH ₃ partial structure. Here, the organic group which is stable with respect to the acid is more specifically an acid group which is decomposed by the action of an acid to generate an alkali-soluble group, which is described in the acid-decomposable resin contained in the below-mentioned actinic ray- Group "

The alkyl group of X _b1 preferably has 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, and a trifluoromethyl group, preferably a methyl group.

X _b1 is preferably a hydrogen atom or a methyl group.

R ₂ includes an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an aryl group, and an aralkyl group having at least one CH ₃ partial structure. The above cycloalkyl group, alkenyl group, cycloalkenyl group, aryl group, and aralkyl group may further have an alkyl group as a substituent.

R ₂ is preferably an alkyl group or an alkyl-substituted cycloalkyl group having at least one CH ₃ partial structure.

The organic group which is stable in an acid having at least one CH ₃ partial structure as R ₂ preferably has 2 to 10 and more preferably 3 to 8 CH ₃ partial structures.

As the alkyl group having at least one CH ₃ partial structure in R ₂ , an alkyl group having 3 to 20 carbon atoms is preferred. Specific examples of the preferable alkyl group include an isopropyl group, an isobutyl group, a 3-pentyl group, a 2-methyl-3-butyl group, a 3-hexyl group, Hexyl group, 3,5-dimethyl-4-pentyl group, isooctyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, Methyl-3-heptyl group, and 2,3,5,7-tetramethyl-4-heptyl group. More preferred examples thereof include an isobutyl group, a t-butyl group, a 2-methyl-3-butyl group, a 2-methyl-3-pentyl group, Pentyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl-3-heptyl group, 2,3,5,7-tetra Methyl-4-heptyl group.

The cycloalkyl group having at least one CH ₃ partial structure in R ₂ may be monocyclic or polycyclic. Specifically, a group having a monocycle having 5 or more carbon atoms, a bicyclo, a tricyclo, a tetracyclo structure, or the like can be given. The number of carbon atoms thereof is preferably from 6 to 30, particularly preferably from 7 to 25 carbon atoms. Preferred examples of the cycloalkyl group include an adamantyl group, a noradamantyl group, a decalin residue, a tricyclododecanyl group, a tetracyclododecanyl group, a norbornyl group, a sidolyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, A decanyl group, and a cyclododecanyl group. More preferred examples thereof include an adamantyl group, a norbornyl group, a cyclohexyl group, a cyclopentyl group, a tetracyclododecanyl group and a tricyclodecanyl group. More preferred are a novinyl group, a cyclopentyl group, and a cyclohexyl group. R ₂ is preferably a cycloalkyl group having at least one CH ₃ partial structure. That comprises at least one CH ₃ partial structure polycyclic cycloalkyl group is more preferable, and it is more preferred cyclic cycloalkyl group having two or more CH ₃ partial structure, and a polycyclic cycloalkyl group having not less than 3 CH ₃ partial structure Particularly preferred. Among them, a polycyclic cycloalkyl group substituted by at least three alkyl groups is preferable.

As the alkenyl group having at least one CH ₃ partial structure in R ₂ , a straight chain or branched alkenyl group having 1 to 20 carbon atoms is preferable, and a branched alkenyl group is more preferable.

The aryl group having at least one CH ₃ partial structure in R ₂ is preferably an aryl group having 6 to 20 carbon atoms, and examples thereof include a phenyl group and a naphthyl group, preferably a phenyl group.

The aralkyl group having at least one CH ₃ partial structure in R ₂ is preferably an aralkyl group having 7 to 12 carbon atoms, and examples thereof include a benzyl group, a phenethyl group and a naphthylmethyl group.

Specific examples of the hydrocarbon group having two or more CH ₃ partial structures in R ₂ include isopropyl, isobutyl, t-butyl, 3-pentyl, 2-methyl- , 3-hexyl group, 2,3-dimethyl-2-butyl group, 2-methyl-3-pentyl group, 3- Methylpentyl group, a 2-ethylhexyl group, a 2,6-dimethylheptyl group, a 1,5-dimethyl-3-heptyl group, a 2,3,5,7-tetramethyl 4-heptyl group, 3,5-dimethylcyclohexyl group, 4-isopropylcyclohexyl group, 4-t-butylcyclohexyl group and isobornyl group. More preferred examples include isobutyl, t-butyl, 2-methyl-3-butyl, 2,3-dimethyl-2-butyl, Dimethyl-4-pentyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5- Dimethyl cyclohexyl group, 3,5-ditert-butylcyclohexyl group, 4-isopropylcyclohexyl group, 4-isopropyl cyclohexyl group, -t-butylcyclohexyl group, and isobornyl group.

Preferred specific examples of the repeating unit represented by formula (II) are shown below. The present invention is not limited to this.

[Chemical formula 10]

The repeating unit represented by the general formula (II) is preferably a repeating unit which is stable (non-acid-decomposing) to the acid, and specifically, it is preferably a repeating unit having no group capable of generating a polar group by the action of an acid Do.

Hereinafter, the repeating unit represented by the general formula (III) will be described in detail.

(11)

In the general formula (III), X _b2 represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom, R ₃ represents an organic group stable to an acid having at least one CH ₃ partial structure, Lt; / RTI &gt;

The alkyl group of X _b2 preferably has 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, and a trifluoromethyl group, preferably a hydrogen atom.

X _b2 is preferably a hydrogen atom.

More specifically, R ₃ is preferably an organic group which does not have a group which is decomposed by the action of an acid to generate an alkali-soluble group, which will be described later in the acid-decomposable resin .

As R ₃ , there can be mentioned an alkyl group having at least one CH ₃ partial structure.

The organic group which is stable in an acid having at least one CH ₃ partial structure as R ₃ preferably has 1 to 10 or less CH ₃ partial structures, more preferably 1 to 8, and more preferably 1 to 4 Or less.

As the alkyl group having at least one CH ₃ partial structure in R ₃ , an alkyl group having 3 to 20 carbon atoms is preferable. Specific examples of the preferable alkyl group include an isopropyl group, an isobutyl group, a 3-pentyl group, a 2-methyl-3-butyl group, a 3-hexyl group, Hexyl group, 3,5-dimethyl-4-pentyl group, isooctyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, Methyl-3-heptyl group, and 2,3,5,7-tetramethyl-4-heptyl group. More preferred examples thereof include an isobutyl group, a t-butyl group, a 2-methyl-3-butyl group, a 2-methyl-3-pentyl group, Pentyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl-3-heptyl group, 2,3,5,7-tetra Methyl-4-heptyl group.

Specific examples of the alkyl group having at least two CH ₃ partial structures in R ₃ include isopropyl, isobutyl, t-butyl, 3-pentyl, 2,3-dimethylbutyl, 2 Methyl-3-pentyl group, 3-methyl-4-hexyl group, 3,5-dimethyl-4-pentyl group, isooctyl group, 2,4 , 4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl-3-heptyl group, 2,3,5,7-tetramethyl- And the like. More preferably 5 to 20 carbon atoms, and more preferably an isopropyl group, a t-butyl group, a 2-methyl-3-butyl group, a 2-methyl-3-pentyl group, Dimethyl-4-pentyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl- , 2,3,5,7-tetramethyl-4-heptyl group, 2,6-dimethylheptyl group.

n represents an integer of 1 to 5, more preferably an integer of 1 to 3, and more preferably 1 or 2.

Preferable specific examples of the repeating unit represented by the formula (III) are shown below. The present invention is not limited to this.

[Chemical Formula 12]

The repeating unit represented by the general formula (III) is preferably a repeating unit which is stable (non-acid decomposable) in an acid, and specifically, it is preferably a repeating unit having no group capable of generating a polar group by the action of an acid Do.

In the case where the resin (X) contains a CH ₃ partial structure in the side chain portion, and particularly when it does not have a fluorine atom and a silicon atom, the repeating unit represented by the general formula (II) and the repeating unit represented by the general formula (III) The content of the at least one repeating unit (x) in the unit is preferably 90 mol% or more, more preferably 95 mol% or more, based on the total repeating units of the resin (X). The content is usually 100 mol% or less based on the total repeating units of the resin (X).

The resin (X) is obtained by copolymerizing at least one repeating unit (x) among repeating units represented by the general formula (II) and repeating units represented by the general formula (III) By mole or more, the surface free energy of the resin (X) increases. As a result, it becomes difficult for the resin (X) to be unevenly distributed on the surface of the actinic ray-sensitive or radiation-sensitive composition film to reliably improve the static / dynamic contact angle of the actinic ray-sensitive or radiation-sensitive film against water, The followability can be improved.

In another aspect of the present invention, the resin (X) is preferably a resin containing a repeating unit derived from a monomer containing at least one fluorine atom and / or at least one silicon atom, and at least one More preferably a water-insoluble resin containing a repeating unit derived from a monomer containing a fluorine atom and / or at least one silicon atom. By containing a repeating unit derived from a monomer containing at least one fluorine atom and / or at least one silicon atom, good solubility in an organic solvent developer can be obtained and the effect of the present invention can be sufficiently obtained.

The fluorine atom or the silicon atom in the resin (X) may be contained in the main chain of the resin, or may be substituted in the side chain.

The resin (X) is preferably a resin having an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom as a partial structure having a fluorine atom.

The alkyl group having a fluorine atom (preferably having 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms) is a straight chain or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and may further have another substituent.

The cycloalkyl group having a fluorine atom is a monocyclic or polycyclic cycloalkyl group in which at least one hydrogen atom is substituted with a fluorine atom and may further have another substituent.

Examples of the aryl group having a fluorine atom include those in which at least one hydrogen atom in an aryl group such as a phenyl group or a naphthyl group is substituted with a fluorine atom and may further have another substituent.

Specific examples of the alkyl group having a fluorine atom, the cycloalkyl group having a fluorine atom, or the aryl group having a fluorine atom are shown below, but the present invention is not limited thereto.

[Chemical Formula 13]

Among the general formulas (F2) to (F3)

Each of R ₅₇ to R ₆₄ independently represents a hydrogen atom, a fluorine atom or an alkyl group. Provided that at least one of R ₅₇ to R ₆₁ and R ₆₂ to R ₆₄ represents a fluorine atom or an alkyl group (preferably having 1 to 4 carbon atoms) in which at least one hydrogen atom has been substituted with a fluorine atom. It is preferable that all of R ₅₇ to R ₆₁ are fluorine atoms. R ₆₂ and R ₆₃ are preferably an alkyl group (preferably having 1 to 4 carbon atoms) in which at least one hydrogen atom is substituted with a fluorine atom, and more preferably a perfluoroalkyl group having 1 to 4 carbon atoms. R ₆₂ and R ₆₃ may be connected to each other to form a ring.

Specific examples of the group represented by formula (F2) include p-fluorophenyl group, pentafluorophenyl group, and 3,5-di (trifluoromethyl) phenyl group.

Specific examples of the group represented by the general formula (F3) include a trifluoroethyl group, a pentafluoropropyl group, a pentafluoroethyl group, a heptafluorobutyl group, a hexafluoroisopropyl group, a heptafluoroisopropyl group, a hexafluoro (2-methyl) isopropyl group, nonafluorobutyl group, octafluoroisobutyl group, nonafluorohexyl group, nonafluoro-t-butyl group, perfluoroisopentyl group, perfluorooctyl group , A perfluoro (trimethyl) hexyl group, a 2,2,3,3-tetrafluorocyclobutyl group, and a perfluorocyclohexyl group. A hexafluoroisopropyl group, a heptafluoroisopropyl group, a hexafluoro (2-methyl) isopropyl group, an octafluoroisobutyl group, a nonafluoro-t-butyl group and a perfluoroisopentyl group are preferable , A hexafluoroisopropyl group, and a heptafluoroisopropyl group are more preferable.

The resin (X) is preferably a resin having an alkylsilyl structure (preferably a trialkylsilyl group) or a cyclic siloxane structure as a partial structure having a silicon atom.

As the resin (X), a resin having at least one kind selected from the group of repeating units represented by the following formulas (C-I) to (C-V) can be mentioned.

[Chemical Formula 14]

Among the general formulas (C-I) to (C-V)

R ₁ to R ₃ each independently represent a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms.

W ₁ to W ₂ each represent an organic group having at least any one of a fluorine atom and a silicon atom.

R ₄ to R ₇ each independently represent a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms. Provided that at least one of R ₄ to R ₇ represents a fluorine atom. R ₄ and R ₅ or R ₆ and R ₇ may form a ring.

R ₈ represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms.

R ₉ represents a linear or branched alkyl group having 1 to 4 carbon atoms or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms.

L ₁ to L _{2 each} represent a single bond or a divalent linking group, and are the same as L ₃ to L ₅ .

Q represents a monocyclic or polycyclic aliphatic group. That is, an atomic group containing two bonded carbon atoms (C-C) and forming an alicyclic structure.

R ₃₀ and R ₃₁ each independently represent hydrogen or a fluorine atom.

R ₃₂ and R ₃₃ each independently represent an alkyl group, a cycloalkyl group, a fluorinated alkyl group or a fluorinated cycloalkyl group.

However, the repeating unit represented by the general formula (CV) has at least one fluorine atom in at least one of R ₃₀ , R ₃₁ , R ₃₂ and R ₃₃ .

The resin (X) preferably has a repeating unit represented by the general formula (C-I), more preferably a repeating unit represented by the following general formulas (C-Ia) to (C-Id).

[Chemical Formula 15]

In the general formulas (C-Ia) to (C-Id)

R ₁₀ and R _{11 each} represent a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms.

W ₃ to W ₆ each represent an organic group having at least one of a fluorine atom and a silicon atom.

When W ₁ to W ₆ are an organic group having a fluorine atom, a fluorinated, straight-chain, branched alkyl group or cycloalkyl group having 1 to 20 carbon atoms or a fluorinated straight-chain, branched or cyclic alkyl ether group having 1 to 20 carbon atoms .

Examples of the fluorinated alkyl group of W ₁ to W ₆ include a trifluoroethyl group, a pentafluoropropyl group, a hexafluoroisopropyl group, a hexafluoro (2-methyl) isopropyl group, a heptafluorobutyl group, Propyl group, propyl group, octafluoroisobutyl group, nonafluorohexyl group, nonafluoro-t-butyl group, perfluoroisopentyl group, perfluorooctyl group, perfluoro (trimethyl) .

When W ₁ to W ₆ are an organic group having a silicon atom, it is preferably an alkylsilyl structure or a cyclic siloxane structure. Specific examples thereof include groups represented by the general formulas (CS-1) to (CS-3).

Specific examples of the repeating unit represented by formula (CI) are shown below. X represents a hydrogen atom, -CH ₃ , -F, or -CF ₃ .

[Chemical Formula 16]

[Chemical Formula 17]

The resin (X) may have a repeating unit represented by the following general formula (Ia) in order to adjust the solubility in an organic solvent developer.

[Chemical Formula 18]

In the general formula (Ia)

Rf represents a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom.

R ₁ represents an alkyl group.

R ₂ represents a hydrogen atom or an alkyl group.

The alkyl group in which at least one hydrogen atom of Rf in the general formula (Ia) is substituted with a fluorine atom is preferably a carbon number of 1 to 3, more preferably a trifluoromethyl group.

The alkyl group represented by R ₁ is preferably a linear or branched alkyl group having 3 to 10 carbon atoms, more preferably a branched alkyl group having 3 to 10 carbon atoms.

R ₂ is preferably a linear or branched alkyl group having 1 to 10 carbon atoms, more preferably a linear or branched alkyl group having 3 to 10 carbon atoms.

Specific examples of the repeating unit represented by formula (Ia) are shown below, but the present invention is not limited thereto.

[Chemical Formula 19]

The resin (X) may further have a repeating unit represented by the following general formula (III).

[Chemical Formula 20]

In the general formula (III)

R ₄ represents an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, a trialkylsilyl group or a group having a cyclic siloxane structure.

L ₆ represents a single bond or a divalent linking group.

The alkyl group represented by R &lt; ₄ &gt; in the general formula (III) is preferably a linear or branched alkyl group having 3 to 20 carbon atoms.

The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms.

The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms.

The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms.

The trialkylsilyl group is preferably a trialkylsilyl group having 3 to 20 carbon atoms.

The group having a cyclic siloxane structure is preferably a group having a cyclic siloxane structure having 3 to 20 carbon atoms.

The bivalent linking group of L ₆ is preferably an alkylene group (preferably having 1 to 5 carbon atoms) or an oxy group.

The resin (X) may have the same group as the acid-decomposable group in a lactone group, an ester group, an acid anhydride, or an acid-decomposable resin to be described later. The resin (X) may further have a repeating unit represented by the following general formula (VIII).

[Chemical Formula 21]

The resin (X) preferably contains a repeating unit (d) derived from a monomer having an alkali-soluble group. As a result, the solubility in the immersion liquid and the solubility in the coating solvent can be controlled. Examples of the alkali-soluble group include a phenolic hydroxyl group, a carboxylic acid group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonylimide group, (alkylsulfonyl) (alkylcarbonyl) methylene group, (alkylsulfonyl) (Alkylcarbonyl) methylene group, a bis (alkylcarbonyl) imide group, a bis (alkylsulfonyl) methylene group, a bis (alkylsulfonyl) imide group, And a group having a tris (alkylsulfonyl) methylene group.

The monomer having an alkali-soluble group is preferably a monomer having an acid dissociation constant pKa of 4 or more, more preferably a monomer having a pKa of 4 to 13, and most preferably a monomer having a pKa of 8 to 13. By containing a monomer having a pKa of 4 or more, swelling of the negative type and the positive type at the time of development is suppressed, and not only excellent developability for an organic solvent developer but also good developing property is obtained even when a weakly basic alkali developer is used .

The acid dissociation constant pKa is described in the Chemical Manual (II) (revised edition 4, 1993, published by the Japan Chemical Society, Maruzen Co., Ltd.), and the value of the pKa of the monomer containing an alkali soluble group is, for example, It can be measured at 25 캜 using a diluting solvent.

The monomer having a pKa of 4 or more is not particularly limited and includes, for example, monomers having an acid group (alkali-soluble group) such as a phenolic hydroxyl group, a sulfonamido group, -COCH ₂ CO-, a fluoroalcohol group, . In particular, monomers containing a fluoroalcohol group are preferred. The fluoroalcohol group is a fluoroalkyl group substituted with at least one hydroxyl group, preferably having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms. Specific examples of the fluoroalcohol group include -CF ₂ OH, -CH ₂ CF ₂ OH, -CH ₂ CF ₂ CF ₂ OH, -C (CF ₃ ) ₂ OH, -CF ₂ CF (CF ₃ ) OH, -CH ₂ C (CF ₃ ) ₂ OH, and the like. Particularly preferred as the fluoroalcohol group is the hexafluoroisopropanol group.

The total amount of the repeating units derived from the monomer having an alkali-soluble group in the resin (X) is preferably from 0 to 90 mol%, more preferably from 0 to 80 mol%, based on all repeating units constituting the resin (X) %, Still more preferably from 0 to 70 mol%.

The monomer having an alkali-soluble group may contain only one acid group or two or more acid groups. The repeating unit derived from this monomer preferably has two or more acid groups per repeating unit, more preferably has 2 to 5 acid groups, and particularly preferably has 2 to 3 acid groups.

Specific preferred examples of the repeating unit derived from a monomer having an alkali-soluble group are shown below, but are not limited thereto.

[Chemical Formula 22]

(23)

&Lt; EMI ID =

(25)

(26)

The resin (X) is preferably any resin selected from the following (X-1) to (X-8).

A resin having a repeating unit (a) having a (X-1) fluoroalkyl group (preferably having a carbon number of 1 to 4), more preferably a resin having only a repeating unit (a).

(B) a repeating unit (X-2) trialkylsilyl group or a cyclic siloxane structure, more preferably a resin having only a repeating unit (b).

(Preferably having 4 to 20 carbon atoms), a cycloalkyl group (preferably having 4 to 20 carbon atoms), a repeating unit (a) having a fluoroalkyl group (X-3) , A resin having a repeating unit (c) having an alkenyl group (preferably having 4 to 20 carbon atoms), a cycloalkenyl group (preferably having 4 to 20 carbon atoms) or an aryl group (preferably having 4 to 20 carbon atoms) More preferably, the copolymer resin of the repeating unit (a) and the repeating unit (c).

(Preferably having 4 to 20 carbon atoms), a cycloalkyl group (preferably having 4 to 20 carbon atoms), a branching phase (X-4) trialkylsilyl group or a cyclic siloxane structure, A resin having a repeating unit (c) having an alkenyl group (preferably having 4 to 20 carbon atoms), a cycloalkenyl group (preferably having 4 to 20 carbon atoms) or an aryl group (preferably having 4 to 20 carbon atoms) Is a copolymer resin of the repeating unit (b) and the repeating unit (c).

A resin having a repeating unit (a) having a (X-5) fluoroalkyl group (preferably having a carbon number of 1 to 4) and a repeating unit (b) having a trialkylsilyl group or cyclic siloxane structure, The copolymer resin of the repeating unit (a) and the repeating unit (b).

(B) a repeating unit (a) having a repeating unit (X-6) fluoroalkyl group (preferably having 1 to 4 carbon atoms), a trialkylsilyl group or a cyclic siloxane structure, (Preferably having 4 to 20 carbon atoms), a cycloalkenyl group (preferably having 4 to 20 carbon atoms) or an aryl group (preferably having 4 to 20 carbon atoms), a cycloalkyl group (preferably having 4 to 20 carbon atoms) A repeating unit (a), a repeating unit (b), and a repeating unit (c).

Examples of the repeating unit (c) having a branched alkyl group, cycloalkyl group, branched chain alkenyl group, cycloalkenyl group or aryl group in the resins (X-3), (X- A suitable functional group can be introduced in consideration of water-solubility, interactivity, and the like.

(X-7) a repeating unit having an alkali-soluble group (d) (preferably, a repeating unit having an alkali-soluble group having a pKa of 4 or more and a repeating unit having a repeating unit constituting the repeating units (X-1) Unit).

(X-8) a resin having only a repeating unit having an alkali-soluble group (d) having a fluoro alcohol group.

The repeating unit (a) having a fluoroalkyl group and / or the trialkylsilyl group or the cyclic siloxane structure (a) and the cyclic siloxane structure (X-3) Is preferably 10 to 99 mol%, and more preferably 20 to 80 mol%.

By having the alkali-soluble group (d) in the resin (X-7), not only the ease of peeling when an organic solvent developer is used, but also other peeling liquids, for example, an alkaline aqueous solution as a peeling liquid The ease of peeling in use is improved.

The resin (X) is preferably a solid at room temperature (25 캜). The glass transition temperature (Tg) is preferably from 50 to 200 DEG C, more preferably from 80 to 160 DEG C.

A solid at 25 占 폚 means a melting point of 25 占 폚 or higher.

The glass transition temperature (Tg) can be measured by a differential scanning calorimeter. For example, the glass transition temperature (Tg) can be measured by changing the temperature of the sample once, Can be measured by interpreting the value.

The resin (X) is insoluble in an immersion liquid (preferably water) and is preferably soluble in an organic solvent developer (preferably a developer containing an ester solvent). When the pattern forming method of the present invention further includes a step of developing using an alkaline developer, it is preferable that the resin (X) is also usable for an alkaline developer from the viewpoint that development can be carried out using an alkaline developer .

When the resin (X) has a silicon atom, the content of the silicon atom is preferably 2 to 50 mass%, more preferably 2 to 30 mass%, based on the molecular weight of the resin (X). The repeating unit containing a silicon atom is preferably 10 to 100% by mass, more preferably 20 to 100% by mass in the resin (X).

By setting the content of the silicon atom and the content of the repeating unit containing silicon atom within the above range, insolubility in an immersion liquid (preferably water), ease of peeling of the protective film when an organic solvent developer is used, It is possible to improve both the incompatibility with the radiation-sensitive or radiation-sensitive film.

By setting the content of the fluorine atom and the content of the repeating unit containing fluorine atom within the above range, insolubility in an immersion liquid (preferably water), ease of peeling of the protective film when an organic solvent developer is used, It is possible to improve both the incompatibility with the radiation-sensitive or radiation-sensitive film.

The weight average molecular weight of the resin (X) in terms of standard polystyrene is preferably 1,000 to 100,000, more preferably 1,000 to 50,000, even more preferably 2,000 to 15,000, and particularly preferably 3,000 to 15,000.

The amount of residual monomer is preferably from 0 to 10 mass%, more preferably from 0 to 5 mass%, from the viewpoint of reducing the elution from the protective film to the immersion liquid, , And more preferably 0 to 1 mass%. The molecular weight distribution (Mw / Mn, also referred to as dispersion degree) is preferably from 1 to 5, more preferably from 1 to 3, still more preferably from 1 to 1.5.

As the resin (X), various commercially available products can be used, and the resin (X) can be synthesized by a usual method (for example, radical polymerization). Examples of the general synthesis method include a batch polymerization method in which a monomer species and an initiator are dissolved in a solvent and heated to effect polymerization, a drop polymerization method in which a solution of a monomer species and an initiator is added dropwise to a heating solvent for 1 to 10 hours, And a dropwise polymerization method is preferable. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane and diisopropyl ether, ketones such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate, , Amide solvents such as dimethylacetamide, and solvents for dissolving the composition of the present invention, such as propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and cyclohexanone, which will be described later .

The polymerization reaction is preferably carried out in an inert gas atmosphere such as nitrogen or argon. As the polymerization initiator, polymerization is initiated by using a commercially available radical initiator (azo type initiator, peroxide, etc.). As the radical initiator, azo-based initiators are preferable, and azo-based initiators having an ester group, a cyano group and a carboxyl group are preferable. Preferred initiators include azobisisobutyronitrile, azobisdimethylvaleronitrile, and dimethyl 2,2'-azobis (2-methylpropionate). If necessary, a chain transfer agent may be used. The concentration of the reactant is usually 5 to 50 mass%, preferably 20 to 50 mass%, and more preferably 30 to 50 mass%. The reaction temperature is usually from 10 to 150 캜, preferably from 30 to 120 캜, more preferably from 60 to 100 캜.

After completion of the reaction, the reaction mixture is cooled to room temperature and purified. The purification may be carried out by a liquid-liquid extraction method in which residual monomer or oligomer component is removed by combining water or an appropriate solvent, a purification method in a solution state such as ultrafiltration in which only a substance having a specific molecular weight or less is extracted and removed, A conventional method such as a reprecipitation method in which residual monomer or the like is removed by coagulating the resin in a poor solvent or a solid state purification method such as washing a resin slurry after separation by filtration with a poor solvent can be applied. For example, the resin is precipitated as a solid by contacting the poor or insoluble solvent (poor solvent) with a volume of 10 times or less, preferably 10 to 5 times the volume of the reaction solution.

The solvent (precipitation or re-precipitation solvent) to be used in the precipitation or reprecipitation operation from the polymer solution may be a poor solvent of the polymer. Depending on the kind of the polymer, for example, hydrocarbons (pentane, Alicyclic hydrocarbons such as benzene, toluene and xylene; aromatic hydrocarbons such as benzene, toluene and xylene; aromatic hydrocarbons such as methylene chloride, chloroform, (E.g., halogenated aliphatic hydrocarbons such as carbon tetrachloride, halogenated aromatic hydrocarbons such as chlorobenzene and dichlorobenzene), nitro compounds (such as nitromethane and nitroethane), nitriles (such as acetonitrile, (Cyclic ethers such as tetrahydrofuran, dioxane, etc.), ketones (such as acetone, methylene chloride, and the like) Ketones, diisobutyl ketone, etc.), esters (ethyl acetate, butyl acetate and the like), carbonates (dimethyl carbonate, diethyl carbonate, ethylene carbonate and propylene carbonate), alcohols (methanol, ethanol, propanol, isopropyl alcohol, Ethanol, etc.), carboxylic acids (such as acetic acid), water, mixed solvents containing these solvents, and the like. Among them, as the solvent for precipitation or reprecipitation, at least an alcohol (particularly, methanol or the like) or a solvent containing water is preferable. In such a solvent containing at least hydrocarbon, the ratio of the alcohol (particularly, methanol etc.) to another solvent (for example, an ester such as ethyl acetate, an ether such as tetrahydrofuran, etc.) (Volume ratio: 25 캜) = 10/90 to 99/1, preferably electrons / latter (volume ratio; 25 캜) = 30/70 to 98/2, more preferably electrons / latter ) = 50/50 to 97/3.

The amount of the precipitation or reprecipitation solvent to be used may be appropriately selected in consideration of the efficiency and the yield. Generally, 100 to 10000 parts by mass, preferably 200 to 2000 parts by mass, Is from 300 to 1000 parts by mass.

The diameter of the nozzle when supplying the polymer solution to the precipitation or reprecipitation solvent (poor solvent) is preferably 4 mm or less (for example, 0.2 to 4 mm?). The feed rate (dropping rate) of the polymer solution into the poor solvent is, for example, about 0.1 to 10 m / sec, preferably about 0.3 to 5 m / sec, as the linear velocity.

The precipitation or reprecipitation operation is preferably carried out under stirring. As agitating blades used for stirring, for example, there may be used a stirring blade such as a desk turbine, a fan turbine (including puddles), a curved blade turbine, an arrow wing turbine, a pauldler type, a bull margin type, an angled vane fan turbine a vane fan turbine, a propeller, a multistage, an anchor (or horseshoe), a gate, a double ribbon, and a screw. Stirring is preferably performed for 10 minutes or more, particularly 20 minutes or more, even after the supply of the polymer solution is completed. When the stirring time is short, the monomer content in the polymer particles may not be sufficiently reduced. The polymer solution and the poor solvent may be mixed and stirred using a line mixer instead of the stirring wing.

The temperature at the time of precipitation or reprecipitation may be suitably selected in consideration of efficiency and operability, and is usually about 0 to 50 ° C, preferably about room temperature (for example, about 20 to 35 ° C). The precipitation or reprecipitation operation can be carried out by a known method such as a batch method, a continuous method, or the like, using a conventional mixing vessel such as a stirring tank.

The particulate polymer precipitated or reprecipitated is usually subjected to ordinary solid-liquid separation such as filtration and centrifugation, and is then used for drying. Filtration is carried out using a solvent-resistant filter medium, preferably under pressure. The drying is carried out at normal pressure or reduced pressure (preferably under reduced pressure) at a temperature of about 30 to 100 캜, preferably about 30 to 50 캜.

Alternatively, the resin may be once separated and precipitated and then dissolved in a solvent, and the resin may be contacted with a solvent which is poorly soluble or insoluble.

That is, after completion of the radical polymerization reaction, the polymer is contacted with a solvent which is hardly soluble or insoluble to precipitate the resin (step a), separate the resin from the solution (step b) (Step c). Thereafter, a resin which is hardly soluble or insoluble in the resin is brought into contact with the resin solution A at a volume of less than 10 times (preferably 5 times or less the volume) of the resin solution A, (Step d) of precipitating the precipitated resin (step d) and separating the precipitated resin (step e).

The solvent used for preparing the resin solution A may be the same solvent as the solvent for dissolving the monomer during the polymerization reaction and may be the same as or different from the solvent used in the polymerization reaction.

The resin (X) may be used singly or in combination.

When the topcoat composition contains a plurality of resins (X), it is preferable to include at least one resin (XA) having a fluorine atom and / or a silicon atom. It is more preferable that the topcoat composition contains a resin (XB) containing at least one resin (XA) having a fluorine atom and / or a silicon atom and at least one fluorine atom and / or a silicon atom (XA) . As a result, when the top coat film is formed, the resin XA is localized on the surface of the top coat film, so that the performance such as development characteristics and immersion liquid followability can be improved.

The content of the resin (XA) is preferably 0.01 to 30% by mass, more preferably 0.1 to 10% by mass, further preferably 0.1 to 8% by mass, based on the total solid content in the topcoat composition, And particularly preferably 0.1 to 5% by mass. The content of the resin (XB) is preferably from 50.0 to 99.9 mass%, more preferably from 60 to 99.9 mass%, still more preferably from 70 to 99.9 mass%, based on the total solid content in the topcoat composition, And particularly preferably 80 to 99.9 mass%.

The preferable range of the content of the fluorine atom and the silicon atom in the resin (XA) is the same as the preferable range in the case where the resin (X) has a fluorine atom and the resin (X) has a silicon atom.

As the resin (XB), a form containing substantially no fluorine atom and silicon atom is preferable. Specifically, in this case, specifically, the total content of the repeating unit having a fluorine atom and the repeating unit having a silicon atom Is preferably 0 to 20 mol%, more preferably 0 to 10 mol%, still more preferably 0 to 5 mol%, and particularly preferably 0 to 3 mol%, based on the total repeating units in the repeating units 0 mol%, i.e., does not contain a fluorine atom and a silicon atom.

The blending amount of the resin (X) in the whole topcoat composition is preferably 50 to 99.9 mass%, more preferably 60 to 99.0 mass%, of the total solid content.

[solvent]

The composition for forming a protective film used in the pattern forming method of the present invention is preferably used by dissolving the resin in a solvent in order to uniformly form the protective film forming composition on the actinic ray-sensitive or radiation-sensitive film.

In order to form a good pattern without dissolving the actinic ray-sensitive or radiation-sensitive film, the protective film-forming composition of the present invention preferably contains a solvent which does not dissolve the actinic ray or radiation-sensitive film, and the negative- It is more preferable to use a solvent of a component different from that of the developer. From the viewpoint of prevention of elution to the immersion liquid, the lower solubility in the immersion liquid is preferable, and the lower solubility in water is more preferable. In the present specification, "the solubility in an immersion liquid is low" means that the immersion liquid is insoluble. Likewise, "low solubility in water" means water insoluble. From the viewpoint of volatility and coatability, the boiling point of the solvent is preferably 90 占 폚 to 200 占 폚.

For example, when the composition for forming a protective film is coated on a silicon wafer and dried to form a film, the film is dipped in purified water at 23 ° C for 10 minutes, and the film thickness after drying Of the initial film thickness is within 3% of the initial film thickness (typically 50 nm).

In the present invention, a solvent is used so as to have a solid concentration of 0.01 to 20 mass%, more preferably 0.1 to 15 mass%, and most preferably 1 to 10 mass% from the viewpoint of uniformly applying the protective film.

The solvent that can be used is not particularly limited as long as the resin (X) described later is dissolved and the actinic ray-sensitive or radiation-sensitive film is not dissolved, but an alcohol solvent, a fluorine solvent, a ketone solvent, It is preferable to use an ether-based solvent or an ester-based solvent. This further improves the non-solubility of the actinic ray-sensitive or radiation-sensitive film, dissolves the actinic ray-sensitive or radiation-sensitive film when the composition for forming a protective film is applied on the actinic-ray-sensitive or radiation-sensitive film The protective film can be formed more uniformly. The viscosity of the solvent is preferably 5 cP (centipoise) or less, more preferably 3 cP or less, more preferably 2 cP or less, and particularly preferably 1 cP or less. Also, in Centipoise, Pascal eligibility can be converted to the following formula. 1000 cP = 1 Pa · s

The alcoholic solvent is preferably a monohydric alcohol, more preferably a monohydric alcohol having 4 to 8 carbon atoms, from the viewpoint of coating properties. As the monohydric alcohol having 4 to 8 carbon atoms, straight chain, branched, or cyclic alcohols can be used, and linear or branched alcohols are preferred. Examples of the alcoholic solvent include aliphatic alcohols such as 1-butanol, 2-butanol, 3-methyl-1-butanol, isobutyl alcohol, tert- 2-heptanol, 3-heptanol, 3-heptanol, 3-octanol, 4-octanol, 4-octanol, 4-heptanol, 1-heptanol, Methyl-1-pentanol, 4-methyl-2-pentanol and the like can be used, and among them, 1-butanol, 1-hexanol, Ethanol, 4-methyl-2-pentanol.

Examples of the fluorine-based solvent include 2,2,3,3,4,4-hexafluoro-1-butanol, 2,2,3,3,4,4,5,5-octafluoro-1 Pentanol, 2,2,3,3,4,4,5,5,6,6-decafluoro-1-hexanol, 2,2,3,3,4,4-hexafluoro-1 , 5-pentanediol, 2,2,3,3,4,4,5,5-octafluoro-1,6-hexanediol, 2,2,3,3,4,4,5 , 5,6,6,7,7-dodecafluoro-1,8-octanediol, 2-fluoroanisole, 2,3-difluoroanisole, perfluorohexane, perfluoro Perfluoro-2-pentanone, perfluoro-2-butyltetrahydrofuran, perfluorotetrahydrofuran, perfluorotributylamine, perfluorotetrapentylamine, and the like. Of these, fluorinated alcohol or fluorinated hydrocarbon solvents can be suitably used.

Examples of the ketone solvent include 4-methyl-2-pentanone, 2,4-dimethyl-2-pentanone, Methylcyclopentanone, and the like can be used.

Examples of the hydrocarbon solvents include aromatic hydrocarbon solvents such as toluene, xylene and anisole, aromatic hydrocarbons such as n-heptane, n-nonene, n-octane, n-decane, And aliphatic hydrocarbon solvents such as heptane, 3,3-dimethylhexane and 2,3,4-trimethylpentane.

As the ether-based solvent, for example, dioxane, tetrahydrofuran, isoamylether and the like can be mentioned in addition to the above glycol ether type solvent. Of the ether-based solvents, ether-based solvents having a branched structure are preferred.

Examples of the ester solvents include methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate (n-butyl acetate), pentyl acetate, hexyl acetate, isoamyl acetate, butyl propionate (n-butyl propionate) , Propyleneglycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether But are not limited to, ethyl acetate, ethyl 3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, , 2-hydroxyisobutyrate methyl, 2-hydroxyisobutyrate methyl, isobutyrate isobutyl, propionate butyl, etc. There. Among ester-based solvents, ester-based solvents having a branched structure are preferable.

These solvents may be used singly or in combination.

When a solvent other than the above is mixed, the mixing ratio thereof is usually 0 to 30 mass%, preferably 0 to 20 mass%, more preferably 0 to 10 mass%, based on the total solvent amount of the protective film forming composition . By mixing a solvent other than the above, the solubility in the actinic ray-sensitive or radiation-sensitive film, the solubility of the resin in the composition for forming a protective film, and the elution characteristics from the actinic ray-sensitive or radiation-sensitive film can be suitably adjusted .

[Surfactants]

The protective film forming composition of the present invention preferably further contains a surfactant.

The surfactant is not particularly limited, and an anionic surfactant, a cationic surfactant, and a nonionic surfactant can be used as long as the composition for forming a protective film can be uniformly formed and dissolved in a solvent for a protective film forming composition. have.

The addition amount of the surfactant is preferably 0.001 to 20% by mass, more preferably 0.01 to 10% by mass.

The surfactant may be used alone or in combination of two or more.

Examples of the surfactant include alkyl cationic surfactants, amide type quaternary cationic surfactants, ester type quaternary cationic surfactants, amine oxide surfactants, betaine surfactants, alkoxylate surfactants, A fluorine-containing surfactant, a silicon-containing surfactant, a fluorine-containing surfactant, a silicon-containing surfactant, a surfactant having both of a fluorine atom and a silicon atom, a surfactant having a fluorine atom and a silicon atom, a surfactant selected from the group consisting of a fatty acid ester type surfactant, an amide type surfactant, an alcohol type surfactant, Active agent) can be suitably used.

Specific examples of the surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether and polyoxyethylene oleyl ether, polyoxyethylene octylphenol Ether, polyoxyethylene alkyl allyl ethers such as polyoxyethylene nonylphenol ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, Polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, Surfactants such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan trioleate and polyoxyethylene sorbitan monostearate, It can be used as surfactants are commercially available lifting.

As commercially available surfactants that can be used, there may be mentioned, for example, surfactants EF301 and EF303 (manufactured by Shin-Akita Kasei Co., Ltd.), Fluorad FC430, 431 and 4430 (manufactured by Sumitomo 3M Co., (Manufactured by Dainippon Ink and Chemicals, Inc.), Surflon S-382, SC101, 102, 103, 104, 105 and 106 (manufactured by Dainippon Ink and Chemicals, Inc.), F173, F176, F189, F113, F110, F177, F120 and R08 GF-300 (manufactured by Toagosei Chemical Industry Co., Ltd.), Surflon S-393 (manufactured by Seiyi Chemical Co., Ltd.) FTX-204D, 208G (manufactured by OMNOVA), PF636, PF656, PF6320, PF6520 (manufactured by OMNOVA), EF122B, RF122C, EF125M, EF135M, EF351, 352, EF801, EF802, EF601 , 218G, 230G, 204D, 208D, 212D, 218, and 222D (manufactured by Neos Co., Ltd.), and silicone surfactants. Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can also be used as a silicone surfactant.

[Other additives]

It is preferable that the protective film forming composition of the present invention further contains at least one selected from the following (A1), (A2) and (A3) as an additive within a range that does not impair the effect of the present invention.

(A1) a basic compound or a base generator

(A2) an ionic compound

(A3) Compound having a radical trapping group

<(A1) Basic compound or base generator>

The topcoat composition preferably further contains at least one of a basic compound and a base generator (hereinafter sometimes collectively referred to as "additive" or "compound (A1)").

(Basic compound)

As the basic compound that can contain the topcoat composition, an organic basic compound is preferable, and a nitrogen-containing basic compound is more preferable. For example, those described as basic compounds that may contain a sensitizing actinic ray-sensitive or radiation-sensitive resin composition described later can be used. Specifically, the compounds having a structure represented by the following formulas (A) to (E) Can be suitably selected.

Further, for example, the following compounds (1) to (7) can be used.

(1) a compound represented by the general formula (BS-1)

(27)

In the general formula (BS-1)

Each R independently represents a hydrogen atom or an organic group. Provided that at least one of the three Rs is an organic group. The organic group is a linear or branched alkyl group, a monocyclic or polycyclic cycloalkyl group, an aryl group or an aralkyl group.

The number of carbon atoms of the alkyl group as R is not particularly limited, but is usually 1 to 20, preferably 1 to 12.

The number of carbon atoms of the cycloalkyl group as R is not particularly limited, but is usually 3 to 20, preferably 5 to 15.

The carbon number of the aryl group as R is not particularly limited, but is usually 6 to 20, preferably 6 to 10. Specific examples thereof include a phenyl group and a naphthyl group.

The carbon number of the aralkyl group as R is not particularly limited, but is usually 7 to 20, preferably 7 to 11. Specific examples thereof include a benzyl group and the like.

The alkyl group, cycloalkyl group, aryl group and aralkyl group as R may have a hydrogen atom substituted by a substituent. Examples of the substituent include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, a hydroxyl group, a carboxy group, an alkoxy group, an aryloxy group, an alkylcarbonyloxy group and an alkyloxycarbonyl group.

In the compound represented by formula (BS-1), it is preferable that at least two of R groups are organic groups.

Specific examples of the compound represented by the general formula (BS-1) include tri-n-butylamine, tri-isopropylamine, tri-n-pentylamine, tri-n-octylamine, tri- There may be mentioned amine compounds such as isodecylamine, dicyclohexylmethylamine, tetradecylamine, pentadecylamine, hexadecylamine, octadecylamine, didecylamine, methyloctadecylamine, dimethylundecylamine, N, , Methyl dioctadecylamine, N, N-dibutylaniline, N, N-dicyclohexylamine, 2,6-diisopropylaniline and 2,4,6-tri (t-butyl) aniline .

As preferable basic compounds represented by the general formula (BS-1), at least one R is an alkyl group substituted with a hydroxy group. Specific examples thereof include triethanolamine and N, N-dihydroxyethylaniline.

The alkyl group as R may have an oxygen atom in the alkyl chain. That is, an oxyalkylene chain may be formed. As the oxyalkylene chain, -CH ₂ CH ₂ O- is preferable. Specifically, there can be mentioned, for example, tris (methoxyethoxyethyl) amine, and compounds exemplified after column 60 of column 3 of US 6040112.

Examples of the basic compound represented by the general formula (BS-1) include the followings.

(28)

[Chemical Formula 29]

(30)

(2) A compound having a nitrogen-containing heterocyclic structure

The nitrogen-containing heterocycle may have aromaticity or may not have aromaticity. In addition, a plurality of nitrogen atoms may be contained. And may further contain a hetero atom other than nitrogen. Specifically, for example, a compound having an imidazole structure (2-phenylbenzoimidazole, 2,4,5-triphenylimidazole or the like), a compound having a piperidine structure [N-hydroxyethylpiperazine (4-dimethylaminopyridine and the like) having a pyridine structure and a compound having an antipyrine structure (Such as antipyrine and hydroxyantipyrine).

A compound having two or more ring structures is also suitably used. Specific examples thereof include 1,5-diazabicyclo [4.3.0] nor-5-ene and 1,8-diazabicyclo [5.4.0] undec-7-ene.

(3) Ammonium salt

As the basic compound, an ammonium salt can also be suitably used. Examples of the anion of the ammonium salt include halides, sulfonates, borates and phosphates. Of these, halides and sulfonates are particularly preferred.

As the halide, chloride, bromide and iodide are particularly preferable.

As the sulfonate, an organic sulfonate having 1 to 20 carbon atoms is particularly preferable. Examples of the organic sulfonate include alkyl sulfonates having 1 to 20 carbon atoms and aryl sulfonates.

The alkyl group contained in the alkyl sulfonate may have a substituent. Examples of the substituent include a fluorine atom, a chlorine atom, a bromine atom, an alkoxy group, an acyl group and an aryl group. Specific examples of the alkyl sulfonate include methanesulfonate, ethanesulfonate, butanesulfonate, hexanesulfonate, octanesulfonate, benzylsulfonate, trifluoromethanesulfonate, pentafluoroethanesulfate Nate and nonafluorobutane sulfonate.

The aryl group contained in the aryl sulfonate includes, for example, a phenyl group, a naphthyl group and an anthryl group. These aryl groups may have a substituent. As the substituent, for example, a straight chain or branched chain alkyl group having 1 to 6 carbon atoms and a cycloalkyl group having 3 to 6 carbon atoms are preferable. Specifically, for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, i-butyl, t-butyl, n-hexyl and cyclohexyl groups are preferable. Examples of the other substituent include an alkoxy group having 1 to 6 carbon atoms, a halogen atom, a cyano group, a nitro group, an acyl group and an acyloxy group.

The ammonium salt may be a hydroxide or a carboxylate. In this case, the ammonium salt is preferably a tetraalkylammonium hydroxide having 1 to 8 carbon atoms (tetramethylammonium hydroxide and tetraalkylammonium hydroxide such as tetraethylammonium hydroxide and tetra- (n-butyl) ammonium hydroxide) Lockside) is particularly preferable.

Preferable basic compounds include, for example, guanidine, aminopyridine, aminoalkylpyridine, aminopyrrolidine, indazole, imidazole, pyrazole, pyrazine, pyrimidine, purine, imidazoline, pyrazoline, Nymoporphine and aminoalkyl morpholine. These may further have a substituent.

(4) a compound (PA) which has a proton acceptor functional group and is decomposed by irradiation with an actinic ray or radiation to generate a compound in which the proton acceptor property is decreased, lost, or changed from proton acceptor property to acidic,

The composition according to the present invention is a composition comprising a basic compound which has a proton acceptor functional group and is decomposed by irradiation with an actinic ray or radiation to change the proton acceptor property from a degraded, (Hereinafter also referred to as &quot; compound (PA) &quot;).

The proton acceptor functional group is a functional group having a group or an electron capable of electrostatically interacting with the proton and includes, for example, a functional group having a macrocyclic structure such as a cyclic polyether or a non-conjugated electron pair Quot; means a functional group having a nitrogen atom.

The nitrogen atom having a non-covalent electron pair which does not contribute to a pi -conjugation is, for example, a nitrogen atom having a partial structure represented by the following general formula.

(31)

Preferable partial structures of the proton acceptor functional groups include, for example, crown ethers, azacrown ethers, primary to tertiary amines, pyridine, imidazole and pyrazine structures.

Compound (PA) is decomposed by irradiation with an actinic ray or radiation to generate a compound in which the proton acceptor property is decreased, lost, or changed from proton acceptor property to acidic. Here, the change in the proton acceptor property from the degradation, disappearance, or change from the proton acceptor property to the acid is a change in the proton acceptor property due to the addition of a proton to the proton acceptor functional group. Specifically, Means that the equilibrium constant in the chemical equilibrium is reduced when a proton adduct is produced from a compound (PA) having a functional group and a proton.

The proton acceptor property can be confirmed by performing pH measurement. In the present invention, it is preferable that the acid dissociation constant pKa of the compound generated by decomposition of the compound (PA) by irradiation with an actinic ray or radiation satisfies pKa <-1, more preferably -13 <pKa < 1, and more preferably -13 &lt; pKa &lt; -3.

In the present invention, the acid dissociation constant pKa represents an acid dissociation constant pKa in an aqueous solution and is described in, for example, Chemical Manual (II) (revised edition 4, 1993, edited by The Japan Chemical Society, Maruzen Co., Ltd.) , And the lower this value is, the larger the acid strength is. Specifically, the acid dissociation constant pKa in the aqueous solution can be measured by measuring an acid dissociation constant at 25 ° C using an infinitely dilute aqueous solution. Further, using the following software package 1, A value based on a database of document values may be obtained by calculation. The values of pKa described in this specification all represent values obtained by calculation using this software package.

Software Package 1: Advanced Chemistry Development (ACD / Labs) Software V8.14 for Solaris (1994-2007ACD / Labs)

The compound (PA) generates, for example, a compound represented by the following formula (PA-1) as the proton adduct resulting from decomposition by irradiation with an actinic ray or radiation. The compound represented by the general formula (PA-1) has an acidic group together with a proton acceptor functional group, whereby the proton acceptor property of the compound (PA) is lowered, disappearance, or is changed from a proton acceptor property to an acid to be.

(32)

In the general formula (PA-1)

Q represents -SO ₃ H, -CO ₂ H, or -X ₁ NHX ₂ Rf. Here, Rf represents an alkyl group, a cycloalkyl group or an aryl group, and each of X ₁ and X ₂ independently represents -SO ₂ - or -CO-.

A represents a single bond or a divalent linking group.

X represents -SO ₂ - or -CO-.

n represents 0 or 1;

B represents a single bond, an oxygen atom or -N (Rx) Ry-. Rx represents a hydrogen atom or a monovalent organic group, and Ry represents a single bond or a divalent organic group. May form a ring by combining with R &lt; h &gt;, or may be bonded to R to form a ring.

R represents a monovalent organic group having a proton acceptor functional group.

The general formula (PA-1) will be described in more detail.

The divalent linking group in A is preferably a divalent linking group having 2 to 12 carbon atoms, and examples thereof include an alkylene group and a phenylene group. More preferably an alkylene group having at least one fluorine atom, preferably 2 to 6 carbon atoms, and more preferably 2 to 4 carbon atoms. The alkylene chain may have a linking group such as an oxygen atom or a sulfur atom. The alkylene group is preferably an alkylene group in which 30 to 100% of the number of hydrogen atoms is substituted with a fluorine atom, and more preferably the carbon atom bonded to the Q moiety has a fluorine atom. Further, a perfluoroalkylene group is preferable, and a perfluoroethylene group, a perfluoropropylene group, and a perfluorobutylene group are more preferable.

The monovalent organic group in Rx preferably has 1 to 30 carbon atoms, and examples thereof include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. These groups may further have a substituent.

The alkyl group in Rx may have a substituent, preferably a straight chain or branched alkyl group having 1 to 20 carbon atoms, and may have an oxygen atom, a sulfur atom and a nitrogen atom in the alkyl chain.

The divalent organic group in Ry is preferably an alkylene group.

As the ring structure in which Rx and Ry may be bonded to each other, a 5- to 10-membered ring containing a nitrogen atom, particularly preferably a 6-membered ring, may be mentioned.

Examples of the alkyl group having a substituent include a group in which a straight chain or branched alkyl group is substituted with a cycloalkyl group (for example, an adamantylmethyl group, an adamantylethyl group, a cyclohexylethyl group, a camphor residue, etc.).

The cycloalkyl group in Rx may have a substituent, preferably a cycloalkyl group having 3 to 20 carbon atoms, and may contain an oxygen atom in the ring.

The aryl group in Rx may have a substituent, and is preferably an aryl group having 6 to 14 carbon atoms.

The aralkyl group in Rx may have a substituent and is preferably an aralkyl group having 7 to 20 carbon atoms.

The alkenyl group in Rx may have a substituent, and examples thereof include a group having a double bond at an arbitrary position of the alkyl group as Rx.

The proton acceptor functional group in R is as described above and includes a group having a heterocyclic aromatic structure containing an azacrown ether, a primary to tertiary amine, nitrogen such as pyridine or imidazole, and the like.

As an organic group having such a structure, the number of carbon atoms is preferably from 4 to 30, and examples thereof include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group.

The alkyl group, the cycloalkyl group, the aryl group, the aralkyl group and the alkenyl group in the alkyl group, cycloalkyl group, aryl group, aralkyl group and alkenyl group, which contain a proton acceptor functional group or an ammonium group in R, , A cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group.

Examples of the substituent which each of the above groups may have include a halogen atom, a hydroxyl group, a nitro group, a cyano group, a carboxy group, a carbonyl group, a cycloalkyl group (preferably having 3 to 10 carbon atoms) (Preferably having 1 to 10 carbon atoms), an alkoxy group (preferably having 1 to 10 carbon atoms), an acyl group (preferably having 2 to 20 carbon atoms), an acyloxy group (preferably having 2 to 10 carbon atoms), an alkoxycarbonyl group (Preferably having 2 to 20 carbon atoms), and an aminoacyl group (preferably having 2 to 20 carbon atoms). The cyclic structure and the aminoacyl group in the aryl group, cycloalkyl group and the like may further include an alkyl group (preferably having 1 to 20 carbon atoms) as a substituent.

When B is -N (Rx) Ry-, it is preferable that R and Rx are bonded to each other to form a ring. By forming a ring structure, the stability is improved and the storage stability of the composition using the same is improved. The number of carbon atoms forming the ring is preferably from 4 to 20, and may be monocyclic or polycyclic, and may contain an oxygen atom, a sulfur atom and a nitrogen atom in the ring.

Examples of the monocyclic structure include a 4-membered ring, a 5-membered ring, a 6-membered ring, a 7-membered ring and an 8-membered ring including a nitrogen atom. As the polycyclic structure, a structure composed of a combination of two or three or more monocyclic structures is exemplified. The monocyclic structure or the polycyclic structure may have a substituent and may be, for example, a halogen atom, a hydroxyl group, a cyano group, a carboxy group, a carbonyl group, a cycloalkyl group (preferably having 3 to 10 carbon atoms) (Preferably having from 6 to 14 carbon atoms), an alkoxy group (preferably having from 1 to 10 carbon atoms), an acyl group (preferably having from 2 to 15 carbon atoms), an acyloxy group (preferably having from 2 to 15 carbon atoms), an alkoxycarbonyl group Preferably 2 to 15 carbon atoms, and an aminoacyl group (preferably 2 to 20 carbon atoms). As the cyclic structure in the aryl group and the cycloalkyl group, examples of the substituent include an alkyl group (preferably having 1 to 15 carbon atoms). As the aminoacyl group, an alkyl group (preferably having a carbon number of 1 to 15) as a substituent may be mentioned.

Rf in -X ₁ NHX ₂ Rf represented by Q is preferably an alkyl group which may have a fluorine atom of 1 to 6 carbon atoms, more preferably a perfluoroalkyl group of 1 to 6 carbon atoms. It is preferable that at least one of X ₁ and X ₂ is -SO ₂ -, and more preferably both of X ₁ and X ₂ are -SO ₂ -.

Of the compounds represented by formula (PA-1), compounds in which the Q moiety is sulfonic acid can be synthesized by using a general sulfonamidation reaction. For example, a method in which one sulfonyl halide moiety of the bis-sulfonyl halide compound is selectively reacted with an amine compound to form a sulfonamide bond, and then the other sulfonyl halide moiety is hydrolyzed, or a method in which a cyclic sulfonic anhydride (Opened ring) by reacting the compound of the present invention with an amine compound.

The compound (PA) is preferably an ionic compound. The proton acceptor functional group may be contained in any of the anion moiety and the cation moiety, and is preferably contained in the anion moiety.

(5) a low-molecular compound having a nitrogen atom and having a group which is cleaved by the action of an acid

The topcoat composition may contain a low molecular weight compound having a nitrogen atom and having a group which is cleaved by the action of an acid (hereinafter also referred to as "low molecular weight compound (D)" or "compound (D)"). It is preferable that the low-molecular compound (D) has a basicity after the group which is eliminated by the action of an acid is desorbed.

The group to be cleaved by the action of an acid is not particularly limited, but an acetal group, a carbonate group, a carbamate group, a tertiary ester group, a tertiary hydroxyl group and a hemiaminalde group are preferable, and a carbamate group, It is particularly preferable that the rotor is a rotor.

The molecular weight of the low-molecular compound (D) having a group which is cleaved by the action of an acid is preferably 100 to 1000, more preferably 100 to 700, and particularly preferably 100 to 500.

As the compound (D), an amine derivative having a group which desorbs by the action of an acid on a nitrogen atom is preferable.

The compound (D) may have a carbamate group having a protecting group on the nitrogen atom. The protecting group constituting the carbamate group can be represented by the following general formula (d-1).

(33)

In the general formula (d-1)

R 'each independently represents a hydrogen atom, a linear or branched alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkoxyalkyl group. R 'may be bonded to each other to form a ring.

R 'is preferably a straight chain or branched alkyl group, cycloalkyl group or aryl group. More preferably, it is a straight chain or branched alkyl group or cycloalkyl group.

The specific structure of such a group is shown below.

(34)

The compound (D) may be constituted by arbitrarily combining the basic compound described later with the structure represented by the general formula (d-1).

It is particularly preferable that the compound (D) has a structure represented by the following formula (J).

The compound (D) may be equivalent to the basic compound as long as it is a low-molecular compound having a group capable of leaving by the action of an acid.

In general formula (J)

(35)

In formula (J), Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. When n = 2, the two Ras may be the same or different and two Ras may be bonded to each other to form a divalent heterocyclic hydrocarbon group (preferably having a carbon number of 20 or less) or a derivative thereof .

R b each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkoxyalkyl group. Provided that when at least one Rb is a hydrogen atom, at least one of the remaining Rb is a cyclopropyl group, a 1-alkoxyalkyl group or an aryl group in -C (Rb) (Rb) (Rb).

And at least two R b may combine to form an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic hydrocarbon group or a derivative thereof.

n represents an integer of 0 to 2, m represents an integer of 1 to 3, and n + m = 3.

In the general formula (J), the alkyl group, cycloalkyl group, aryl group or aralkyl group represented by Ra and Rb is preferably a hydroxyl group, a cyano group, an amino group, a pyrrolidino group, a piperidino group, , An alkoxy group, and a halogen atom. The same applies to the alkoxyalkyl group represented by Rb.

Examples of the alkyl group, cycloalkyl group, aryl group, and aralkyl group (wherein the alkyl group, cycloalkyl group, aryl group, and aralkyl group may be substituted with the functional group, alkoxy group, or halogen atom) of Ra and /

For example, a linear or branched alkane such as methane, ethane, propane, butane, pentane, hexane, heptane, octane, nonene, decane, undecane and dodecane Groups derived from these alkenes are substituted with at least one or more than one of cycloalkyl groups such as cyclobutyl group, cyclopentyl group and cyclohexyl group,

Groups derived from cycloalkanes such as cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, norbornene, adamantane and no adamantane, and groups derived from these cycloalkanes, For example, one kind of linear or branched alkyl group such as methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, Or at least one substituent group,

A group derived from an aromatic compound such as benzene, naphthalene and anthracene, and a group derived from these aromatic compounds, for example, a methyl group, ethyl group, n-propyl group, i-propyl group, n- , A 1-methylpropyl group, a t-butyl group, and other straight-chain or branched alkyl groups substituted with one or more,

Groups derived from heterocyclic compounds such as pyrrolidine, piperidine, morpholine, tetrahydrofuran, tetrahydropyrane, indole, indoline, quinoline, perhydroquinoline, indazole and benzimidazole, A group derived from a linear or branched alkyl group or a group derived from an aromatic compound or one or more groups derived from an aromatic compound, a group derived from a straight chain or branched alkane, a group derived from a cycloalkane, , A naphthyl group, and an anthracene group, or a group substituted by one or more of the groups derived from an aromatic compound such as a hydroxyl group, a cyano group, an amino group, a pyrrolidino group, a piperidino group , A morpholino group, an oxo group, and the like.

Examples of the divalent heterocyclic hydrocarbon group (preferably having 1 to 20 carbon atoms) or derivatives thereof formed by combining Ra with each other include pyrrolidine, piperidine, morpholine, 1,4 , 5,6-tetrahydropyrimidine, 1,2,3,4-tetrahydroquinoline, 1,2,3,6-tetrahydropyridine, homopiperazine, 4-azabenzimidazole, benzotriazole, 5 -Azabenzotriazole, 1H-1,2,3-triazole, 1,4,7-triazacyclononane, tetrazole, 7-azaindole, indazole, benzimidazole, imidazo [1,2 -a] pyridine, (lS, 4S) - (+) - 2,5- diazabicyclo [2.2.1] heptane, 1,5,7- triazabicyclo [4.4.0] , Groups derived from heterocyclic compounds such as indole, indoline, 1,2,3,4-tetrahydroquinoxaline, perhydroquinoline and 1,5,9-triazacyclododecane, and groups derived from these heterocyclic compounds To a linear, branched alkane A group derived from a cycloalkane, a group derived from an aromatic compound, a group derived from a heterocyclic compound, a hydroxyl group, a cyano group, an amino group, a pyrrolidino group, a piperidino group, a morpholino group , An oxo group, and the like, and the like.

Specific examples of the compound (D) particularly preferred in the present invention include compounds described in paragraphs [0786] to [0788] of JP-A No. 2013-83966, but the present invention is not limited thereto no.

Compounds represented by the general formula (J) can be synthesized based on JP-A-2007-298569, JP-A-2009-199021 and the like.

In the present invention, the low-molecular compound (D) may be used singly or in combination of two or more.

Other compounds that can be used include compounds synthesized in Examples of JP-A No. 2002-363146 and compounds described in paragraph 0108 of JP-A No. 2007-298569.

As the basic compound, a photosensitive basic compound may be used. As the photosensitive basic compound, for example, JP-A 2003-524799 and J. Photopolym. Sci & Tech. Vol. 8, P. 543-553 (1995), and the like can be used.

As the basic compound, a compound called a photodegradable base may be used. Examples of the photodegradable base include an onium salt of a carboxylic acid and an onium salt of a sulfonic acid in which the alpha -phosphorus is not fluorinated. Specific examples of photodegradable bases include WO 0114 / 133048A1, paragraphs 0145, 2008-158339, and 399146.

(Content of basic compound)

The content of the basic compound in the topcoat composition is preferably 0.01 to 5% by mass, more preferably 0.01 to 1% by mass, and still more preferably 0.01 to 0.5% by mass, based on the solid content of the topcoat composition .

(Base generator)

Examples of the base generator (photo-base generator) that can contain the top coat composition include those disclosed in JP-A Nos. 4-151156, 4-162040, 5-197148, 5-5995 , 6-194834, 8-146608, 10-83079, and European Patent Publication 622682.

The compounds described in JP-A-2010-243773 are also suitably used.

Specific examples of the photoacid generators include 2-nitrobenzyl carbamate, 2,5-ditrobenzyl cyclohexylcarbamate, N-cyclohexyl-4-methylphenylsulfonamide and 1,1- Dimethyl-2-phenylethyl-N-isopropyl carbamate, but are not limited thereto.

(Content of base generator)

The content of the base generator in the topcoat composition is preferably 0.01 to 20% by mass, more preferably 0.1 to 10% by mass, and more preferably 1 to 5% by mass, based on the solid content of the topcoat composition Do.

&Lt; (A2) Ionic compound >

The topcoat composition may contain an ionic compound that is relatively weakly acidic to the acid generator. As the ionic compound, an onium salt is preferable. When an acid generated from an acid generator by irradiation of actinic ray or radiation collides with an onium salt having an unreacted weak acid anion, it releases a weak acid by salt exchange to generate an onium salt having a strong acid anion. In this process, since the strong acid is exchanged into the weak acid having a lower catalytic activity, the acid is inactivated in appearance and the acid diffusion can be controlled.

The onium salt which is relatively weak acid with respect to the acid generator is preferably a compound represented by the following general formula (d1-1) to (d1-3).

(36)

In the formula, R ⁵¹ is a hydrocarbon group which may have a substituent, and Z ^2c is a hydrocarbon group having 1 to 30 carbon atoms which may have a substituent (provided that the carbon adjacent to S is not substituted with a fluorine atom) ), R ⁵² is an organic group, Y ³ is a straight chain, branched chain or cyclic alkylene group or arylene group, Rf is a hydrocarbon group containing a fluorine atom, M ⁺ Iodonium cation.

Preferable examples of the sulfonium cation or the iodonium cation represented by M ⁺ include the sulfonium cation represented by the formula (ZI) and the iodonium cation represented by the formula (ZII).

A preferable example of the anion moiety of the compound represented by the general formula (d1-1) is the structure exemplified in the paragraph [0198] of JP-A No. 2012-242799.

As a preferable example of the anion moiety of the compound represented by the formula (d1-2), the structure exemplified in paragraph [0201] of JP-A No. 2012-242799 is exemplified.

Preferable examples of the anion moiety of the compound represented by the general formula (d1-3) include the structures exemplified in paragraphs [0209] and [0210] of JP-A No. 2012-242799.

The onium salt which is relatively weakly acidic with respect to the acid generator is a compound in which (C) a cation moiety and an anion moiety are contained in the same molecule, and the cation moiety and the anion moiety are linked by a covalent bond (hereinafter, CA) ").

The compound (CA) is preferably a compound represented by one of the following general formulas (C-1) to (C-3).

(37)

Among the general formulas (C-1) to (C-3)

R ₁ , R ₂ and R ₃ each represent a substituent having 1 or more carbon atoms.

L ₁ represents a divalent linking group or a single bond connecting a cation site and an anion site.

-X ^- it _{^{is, -COO -, -SO 3 -,}} -SO 2 -, -N - represents an anion portion selected from -R _4. R ₄ is a group having a carbonyl group: -C (= O) -, a sulfonyl group: -S (= O) ₂ -, or a sulfinyl group: -S &Lt; / RTI &gt;

R ₁ , R ₂ , R ₃ , R ₄ and L ₁ may be bonded to each other to form a ring structure. In (C-3), two of R ₁ to R ₃ may be combined to form a double bond with an N atom.

Examples of the substituent having 1 or more carbon atoms in R ₁ to R ₃ include an alkyl group, a cycloalkyl group, an aryl group, an alkyloxycarbonyl group, a cycloalkyloxycarbonyl group, an aryloxycarbonyl group, an alkylaminocarbonyl group, a cycloalkylaminocarbonyl group, Aminocarbonyl group and the like. Preferably, it is an alkyl group, a cycloalkyl group or an aryl group.

L ₁ as a divalent linking group may be a linear or branched alkylene group, a cycloalkylene group, an arylene group, a carbonyl group, an ether bond, an ester bond, an amide bond, a urethane bond, a urea bond, And the like. L ₁ is more preferably an alkylene group, an arylene group, an ether linkage, an ester linkage, and a group formed by combining two or more of these.

Preferred examples of the compound represented by the general formula (C-1) include compounds represented by the formulas [0037] to [0039] of Japanese Patent Application Laid-Open No. 2013-6827 and the compounds [0027] to [0029] of the Japanese Patent Application Laid- Compounds.

Preferable examples of the compound represented by the general formula (C-2) include the compounds exemplified in paragraphs [0012] to [0013] of JP-A No. 2012-189977.

Preferable examples of the compound represented by the general formula (C-3) include the compounds exemplified in paragraphs [0029] to [0031] of JP-A No. 2012-252124.

(Content of onium salt)

The content of the onium salt in the topcoat composition is preferably 0.5% by mass or more, more preferably 1% by mass or more, further preferably 2.5% by mass or more based on the solid content of the topcoat composition.

On the other hand, the upper limit of the content of the onium salt is preferably 25 mass% or less, more preferably 20 mass% or less, more preferably 10 mass% or less, and 8 mass% or less, based on the solid content of the topcoat composition Particularly preferred.

&Lt; (A3) Compound having a radical trapping group >

(A3) The compound having a radical trapping group is also referred to as compound (A3).

A radical trapping group is a group that captures an active radical and stops a radical reaction. Examples of such a radical trapping group include a group which is reacted with an active radical to be converted into a stable free radical, and a group having a stable free radical.

Examples of such a compound having a radical trapping group include hydroquinone, catechol, benzoquinone, nitroxyl radical compound, aromatic nitro compound, N-nitroso compound, benzothiazole, dimethyl aniline, phenothiazine , Vinylpyrene, and derivatives thereof, and the like.

Specific examples of the radical trapping group having no basicity include at least one group selected from the group consisting of a hindered phenol group, a hydroquinone group, an N-oxyl free radical group, a nitroso group, The species of the species may suitably be mentioned.

The number of radical trapping groups of the compound (A3) is not particularly limited, but when the compound (A3) is a compound other than a polymer compound, the radical trapping group is preferably 1 to 10, more preferably 1 to 5, , And one to three are more preferable.

On the other hand, when the compound (A3) is a polymer compound having a repeating unit, it is preferable that the compound (A3) has a radical trapping group having 1 to 5 repeating units having a radical trapping group, more preferably a radical trapping group having 1 to 3. The composition ratio of the repeating unit having a radical trapping group in the polymer compound is preferably from 1 to 100 mol%, more preferably from 10 to 100 mol%, still more preferably from 30 to 100 mol%.

As the compound (A3) having a radical trapping group, a compound having a nitrogen-oxygen bond is preferable, and a compound represented by any one of the following general formulas (1) to (3) is more preferable.

The compound represented by the following general formula (1) corresponds to a compound having an N-oxyl free radical group, and the compound represented by the following general formula (2) corresponds to a compound having a nitroso group, 3) corresponds to a compound having an nitrone group.

(38)

In the general formulas (1) to (3), R ₁ to R ₆ each independently represent an alkyl group, a cycloalkyl group or an aryl group. In formula (1), R ₁ and R ₂ may combine to form a ring. In formula (3), at least two of R ₄ to R ₆ may be bonded to form a ring.

R ₁ ~ R ₆ represents an alkyl group, a cycloalkyl group, and aryl group, R ₁ and R ₂ are combined ring, which may form by R ₄ ~ R ₆ 2 with at least have a ring, substituents may form and bond .

Examples of the alkyl group represented by R ₁ to R ₆ include linear or branched alkyl groups having 1 to 10 carbon atoms. Specific examples thereof include methyl, ethyl, n-propyl, i-propyl, n- Butyl group, n-pentyl group, n-hexyl group and the like. Of these, methyl group, ethyl group, n-butyl group , t-butyl group is preferable.

Examples of the cycloalkyl group represented by R ₁ to R ₆ include a cycloalkyl group having 3 to 15 carbon atoms, and specific examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group , A cyclooctyl group, a norbornyl group, an adamantyl group, and the like.

Examples of the aryl group represented by R ₁ to R ₆ include an aryl group having 6 to 14 carbon atoms, and specific examples thereof include a phenyl group, a tolyl group and a naphthyl group.

The ring which R ₁ and R ₂ may form and the ring which R ₄ to R ₆ may form are preferably a 5- to 10-membered ring, more preferably a 5-membered or 6-membered ring.

An alkyl group, a cycloalkyl group and an aryl group represented by R ₁ to R ₆ , a ring which may be formed by bonding of R ₁ and R ₂ and a substituent which may have a ring which may be formed by bonding at least two of R ₄ to R ₆ (For example, a fluorine atom), a hydroxyl group, a carboxyl group, a cyano group, a nitro group, an amino group, an oxy group, an alkoxy group, an alkoxyalkyl group, an alkoxycarbonyl group, An acyl group (RCONH-: R represents a substituted or unsubstituted alkyl group or phenyl group), -SO ₂ Na, -P (= O) (OC ₂ H ₅ ) ₂ , and the like.

The cycloalkyl group represented by R ₁ to R ₆ and the substituent which the aryl group may have include alkyl groups.

The compound represented by any one of formulas (1) to (3) may be in the form of a resin. In this case, at least one of R ₁ to R ₆ may be bonded to the main chain or side chain of the resin.

Specific examples of the compound (A3) having a radical trapping group are shown below, but the present invention is not limited thereto.

[Chemical Formula 39]

As described above, the compound (A3) may be a polymer compound having a repeating unit. Specific examples of the repeating unit of the polymer compound (A3) are shown below, but the present invention is not limited thereto.

(40)

When the compound (A3) having a radical trapping group is a low molecular weight compound, the molecular weight thereof is not particularly limited, and the molecular weight is preferably 100 to 5000, more preferably 100 to 2000, and even more preferably 100 to 1000.

When the compound (A3) having a radical trapping group is a polymer compound having a repeating unit, its weight average molecular weight is preferably 5,000 to 20,000, and more preferably 5,000 to 10,000.

As the compound (A3) having a radical trapping group, a commercially available compound may be used, or a compound synthesized by a known method may be used. The compound (A3) can also be synthesized by reacting a commercially available low-molecular compound having a radical trapping group with a polymer compound having a reactive group such as an epoxy group, a halogenated alkyl group, an acid halide group, a carboxyl group or an isocyanate group do.

The content of the compound (A3) having a radical trapping group is usually 0.001 to 10 mass%, preferably 0.01 to 5 mass%, based on the total solid content of the topcoat composition.

The topcoat composition may contain a plurality of compounds selected from the group consisting of (A1) to (A3). For example, two or more compounds (A1) may be included which are distinguished from each other.

The topcoat composition may contain two or more compounds selected from the group consisting of (A1) to (A3). For example, both of the compound (A1) and the compound (A2) may be contained.

When the topcoat composition contains a plurality of compounds selected from the group consisting of (A1) to (A3), the total content of these compounds is usually 0.001 to 20 mass%, based on the total solid content of the topcoat composition %, Preferably 0.01 to 10% by mass, and more preferably 1 to 8% by mass.

The compound (A3) having a radical trapping group may be used alone or in combination of two or more.

[Method of adjusting composition for forming protective film]

In the composition for forming a protective film of the present invention, it is preferable to dissolve each of the above-described components in a solvent and filter it. The filter is preferably made of polytetrafluoroethylene, polyethylene or nylon having a pore size of 0.1 μm or less, more preferably 0.05 μm or less, and further preferably 0.03 μm or less. A plurality of filters may be connected in series or in parallel. Further, the composition may be filtered a plurality of times, or the step of filtering a plurality of times may be a circulating filtration step. The composition may be degassed before or after the filtration of the filter. The topcoat composition of the present invention preferably contains no impurities such as metals. The content of the metal component contained in these materials is preferably 10 ppm or less, more preferably 5 ppm or less, more preferably 1 ppm or less, and particularly preferably substantially no content (less than the detection limit of the measuring apparatus) .

&Lt; Pattern formation method >

As described above, in the pattern forming method of the present invention,

A step of applying an active ray-sensitive or radiation-sensitive resin composition on a substrate to form a radiation-sensitive or radiation-sensitive film;

Forming a protective film (top coat) by applying a composition for forming a protective film on the above-mentioned active ray-sensitive or radiation-sensitive film;

A step of exposing an actinic ray-sensitive or radiation-sensitive film coated with the protective film;

And developing the exposed sensitized actinic ray or radiation-sensitive film with a developer containing an organic solvent.

The pattern forming method of the present invention may include a heating step in one form or may include a heating step plural times.

In the pattern forming method of the present invention, in one aspect, the exposure step may be included plural times.

In one embodiment, the pattern forming method of the present invention may further include a developing step a plurality of times, for example, a developing step using a developer containing an aqueous alkaline solution.

Further, the pattern forming method of the present invention may include a rinsing step in one form.

The pattern forming method of the present invention may, in an aspect, dissolve the protective film in the organic solvent developer in the organic solvent developing step to separate the protective film simultaneously with the organic solvent development, or separate from the organic solvent developing step, And a step of removing the protective film using a predetermined stripping agent.

Hereinafter, each step included in the pattern forming method of the present invention will be described in detail.

&Lt; Process of forming an actinic ray-sensitive or radiation-sensitive film &

The application of the actinic ray-sensitive or radiation-sensitive resin composition onto the substrate may be carried out by any method as far as the actinic ray-sensitive or radiation-sensitive resin composition can be coated on the substrate. The known spin- A spray method, a roller coating method, an immersion method, or the like can be used. Preferably, the resist composition is applied by a spin coat method.

The substrate on which the film is to be formed in the present invention is not particularly limited, and examples thereof include inorganic substrates such as silicon, SiN, SiO ₂ and TiN, and coating inorganic substrates such as SOG; semiconductor manufacturing processes such as IC; liquid crystal; A substrate commonly used for a manufacturing process of a circuit board, and further lithography of other fabrication can be used.

An antireflection film may be preliminarily formed (coated) on the substrate before forming the active ray-sensitive or radiation-sensitive film.

As the antireflection film, an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon, amorphous silicon and the like and an organic film type comprising a light absorber and a polymer material can be used. As the organic antireflection film, commercially available ARC series such as DUV30 series manufactured by Brewer Science, DUV-40 series, AR-2, AR-3, AR-5 manufactured by Shipley and ARC29A manufactured by Nissan Kagaku Co., An organic antireflection film may also be used.

Further, the usable active ray-sensitive or radiation-sensitive resin composition will be described in detail in the following description.

&Lt; Step of forming protective film &

The pattern forming method of the present invention is characterized in that after the step of forming the actinic ray-sensitive or radiation-sensitive film and before the step of exposing the actinic-ray-sensitive or radiation-sensitive film to the organic solvent developer, And a step of forming a protective film (top coat) by applying the composition for forming a protective film on the film. The functions required for the topcoat are titration onto the actinic ray-sensitive or radiation-sensitive film, transparency to radiation, in particular to 193 nm, immersion liquid (preferably water) poorly soluble. It is preferable that the actinic radiation sensitive or radiation sensitive resin composition is not mixed with the actinic ray-sensitive or radiation-sensitive film, and is uniformly applied to the surface of the actinic-ray-sensitive or radiation-sensitive film.

The method for applying the composition for forming a protective film is not particularly limited, and for example, a spin coat method or the like can be applied.

The film thickness of the protective film (the film thickness after the PB process before forming the protective film) is not particularly limited, but is usually from 1 nm to 300 nm, preferably from 10 nm to 300 nm, more preferably from 10 nm to 300 nm, from the viewpoint of transparency to an exposure light source 20 nm to 200 nm, and more preferably 30 nm to 100 nm.

After forming the protective film, the substrate is heated as necessary.

The refractive index of the protective film is preferably close to the refractive index of the actinic ray-sensitive or radiation-sensitive film from the viewpoint of resolution.

The protective film is preferably insoluble in the immersion liquid, and more preferably insoluble in water.

The receding contact angle of the protective film is preferably 70 deg. To 100 deg., More preferably 80 deg. To 100 deg., From the viewpoint of the immersion liquid followability. More preferably, the receding contact angle (23 DEG C) of water relative to the protective film is between 70 DEG C and 100 DEG C, and most preferably, the contact angle of water (23 DEG C) with respect to the protective film is between 80 DEG C and 100 DEG C.

In the case where the exposure process in the pattern forming method of the present invention is a liquid immersion exposure process, since the immersion liquid needs to move on the wafer in order to follow the movement in which the exposure head scans the wafer at high speed and forms an exposure pattern, The contact angle of the immersion liquid with respect to the actinic ray-sensitive or radiation-sensitive film in the dynamic state becomes important, and it is desirable to have the above-mentioned specific range of the receding contact angle in order to obtain better resist performance.

&Lt; Peeling step of protective film &

As described above, when peeling the protective film, an organic solvent developer may be used, or a separate release agent may be used. When peeling is carried out separately from the developing step, the peeling time is preferably after the exposure, and in the case where the PEB step to be described later is included, the after PEB is more preferable. As the releasing agent, a solvent having a small penetration into the actinic ray-sensitive or radiation-sensitive film is preferable. It is preferable that the peeling process can be peeled off with an organic solvent developer in that the peeling process can be performed simultaneously with the development processing process of the actinic ray-sensitive or radiation-sensitive film. The organic solvent developing solution used for peeling is not particularly limited as long as it can dissolve and remove the low exposed portions of the actinic ray-sensitive or radiation-sensitive film, and may be a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent, , And it is preferable to use a developing solution containing a ketone solvent, an ester solvent, an alcohol solvent and an ether solvent, and it is preferable to use a developing solution containing an ester solvent Is more preferably used, and it is most preferable to use a developer containing butyl acetate. From the viewpoint of peeling with an organic solvent developer, the dissolution rate of the protective film to the organic solvent developer is preferably 1 nm / sec to 300 nm / sec, more preferably 10 nm / sec to 100 nm / sec.

Here, the dissolution rate of the protective film to the organic solvent developer is a rate of film thickness decrease when the protective film is formed and then exposed to a developing solution. In the present invention, the dissolution rate is set to a value obtained by immersing in a butyl acetate solution at 23 占 폚.

When the dissolution rate of the protective film in the organic solvent developer is set to 1 / sec sec or more, preferably 10 nm / sec or more, the occurrence of development defects after development is reduced. In addition, when it is 300 nm / sec or less, preferably 100 nm / sec, there is an effect that the line edge roughness of the pattern after development becomes favorable because of the effect that exposure unevenness during exposure is reduced.

The protective film may be removed by using another known developer, for example, an aqueous alkali solution or the like. Specific examples of the aqueous alkaline solution which can be used include an aqueous solution of tetramethylammonium hydroxide.

<Exposure Step>

Exposure to the actinic radiation-sensitive or radiation-sensitive film can be carried out by a generally well-known method. Preferably, the actinic ray-sensitive or radiation-sensitive film is irradiated with an actinic ray or radiation through a predetermined mask. The exposure dose can be appropriately set, and is usually 1 to 100 mJ / cm ² .

The wavelength of the light source used in the exposure apparatus of the present invention is not particularly limited, but it is preferable to use light having a wavelength of 250 nm or less. Examples thereof include KrF excimer laser light (248 nm), ArF excimer laser light F ₂ excimer laser light (157 nm), EUV light (13.5 nm), and electron beam. Of these, ArF excimer laser light (193 nm) is more preferable.

In the case of carrying out the exposure process, the surface of the film is cleaned with a chemical liquid of a water system before (1) a step of forming a film on a substrate, before exposing, and / or (2) May be carried out.

In the case of liquid immersion lithography, the liquid immersion liquid is preferably as small as possible with a temperature coefficient of refractive index so as to minimize the distortion of the optical image projected onto the film, and is transparent to the exposure wavelength. In the case of laser light (wavelength: 193 nm), water is preferably used in terms of ease of acquisition and ease of handling in addition to the above-mentioned points.

When water is used, an additive (liquid) for increasing the surface activity may be added in a small proportion while reducing the surface tension of the water. It is preferable that the additive does not dissolve the actinic ray sensitive or radiation-sensitive film on the wafer and can neglect the influence of the lower surface of the lens element on the optical coat. As the water to be used, distilled water is preferable. It is also possible to use pure water that has been filtered through an ion exchange filter or the like. This makes it possible to suppress the distortion of the optical image projected onto the resist due to the incorporation of impurities.

It is also possible to use a medium having a refractive index of 1.5 or more in order to further improve the refractive index. The medium may be an aqueous solution or an organic solvent.

The pattern forming method of the present invention may have a plurality of exposure steps. In this case, plural exposures may use the same light source or different light sources, but it is preferable to use ArF excimer laser light (wavelength: 193 nm) for the first exposure.

&Lt; Organic solvent development step &

The pattern forming method of the present invention includes a step of developing using an organic solvent developer.

As the organic solvent that can be used in the organic solvent development, a polar solvent such as a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent or an ether solvent, and a hydrocarbon hydrocarbon solvent may be used. For example, there may be mentioned 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutylketone, cyclohexanone, Methyl cyclohexanone, phenylacetone, methyl ethyl ketone, methyl isobutyl ketone, acetylacetone, acetone diacetone, ionone, diacetone diol alcohol, acetylcarbinol, acetophenone, methylnaphthyl ketone, isophorone, propylene carbonate Ketone solvents such as methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, isoamyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl Ether acetate, diethylene glycol monoethyl ether acetate, ethyl 3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, Butyl, propyl formate, ethyl lactate, butyl lactate, propyl lactate, ester solvents such as 2-hydroxy-iso-butyric acid methyl, butyl view carbonate can be used.

Examples of the alcohol solvent include aliphatic alcohols such as methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, - alcohols such as octyl alcohol and n-decanol, glycol solvents such as ethylene glycol, diethylene glycol and triethylene glycol, ethylene glycol monomethyl ether, propylene glycol Glycol ether solvents such as monomethyl ether, ethylene glycol, propylene glycol, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, and methoxymethyl butanol; .

As the ether-based solvent, dioxane, tetrahydrofuran and the like can be mentioned in addition to the above glycol ether type solvent.

Examples of the amide solvents include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, hexamethylphosphoric triamide, Diazolidinone and the like can be used.

Examples of the hydrocarbon hydrocarbon solvents include aromatic hydrocarbon solvents such as toluene and xylene, and aliphatic hydrocarbon solvents such as pentane, hexane, octane and decane.

A plurality of the above-mentioned solvents may be mixed, or they may be mixed with a solvent or water other than the above.

As a developing method, there are a method (puddle method) in which the developer is raised by surface tension on the surface of the substrate to stop the development for a predetermined time (puddle method), a method in which the developer is sprayed on the substrate surface (spray method) (Dynamic dispensing method) in which the developing solution is continuously drawn while scanning the developing solution nozzle (dispensing nozzle) at a speed.

The vapor pressure of the negative type developer is preferably 5 kPa or less at 20 캜, more preferably 3 kPa or less, and most preferably 2 kPa or less. By setting the vapor pressure of the negative-working developer to 5 kPa or less, evaporation of the developer on the substrate or in the developing cup is suppressed, temperature uniformity within the wafer surface is improved, and as a result, dimensional uniformity within the wafer surface is improved.

Specific examples having a vapor pressure of 2 kPa or less at 20 캜, which is the most preferable range, include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, Ketone solvents such as acetone, methyl ethyl ketone, cyclohexanone, methylcyclohexanone, and phenylacetone, acetyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, Diethyleneglycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, ethyl lactate, butyl lactate , Ester solvents such as propyl alcohol, isopropyl alcohol, n-butyl alcohol, isopropyl alcohol, isopropyl alcohol, n-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, Based solvent, ethylene glycol , Glycol solvents such as diethylene glycol and triethylene glycol, ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol, propylene glycol, diethylene glycol Glycol ether solvents such as glycol monomethyl ether, triethylene glycol monoethyl ether and methoxymethylbutanol, N-methyl-2-pyrrolidone, N, N-dimethylacetamide , Amide solvents of N, N-dimethylformamide, aromatic hydrocarbon solvents such as xylene, and aliphatic hydrocarbon solvents such as octane and decane.

A suitable amount of a surfactant may be added to the developer that can be used in the negative type development, if necessary.

The surfactant is not particularly limited, and for example, ionic or nonionic fluorine-based and / or silicon-based surfactants can be used. As such fluorine- and / or silicon-based surfactants, for example, JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP- Japanese Unexamined Patent Application Publication No. Hei 8-62834, Japanese Unexamined Patent Application, First Publication No. Hei 9-54432, Japanese Unexamined Patent Application, First Publication No. Hei 9- And surfactants described in U.S. Patent Nos. 5,605,792, 5,908,588, 5,405,720, 5,360,692, 5,529,881, 5,863,330, 5,563,148, 5,576,143, 5,259,451 and 5,824,451, It is a nonionic surfactant. The nonionic surfactant is not particularly limited, but a fluorinated surfactant or a silicone surfactant is more preferably used.

The amount of the surfactant to be used is generally 0.001 to 5 mass%, preferably 0.005 to 2 mass%, more preferably 0.01 to 0.5 mass%, based on the total amount of the developer.

The organic solvent developer may contain a basic compound. Specific examples and preferred examples of the basic compound that can be included in the organic solvent developer used in the present invention are the same as those described below as basic compounds that can contain the actinic ray-sensitive or radiation-sensitive resin composition.

Examples of the developing method include a method (dip method) in which the substrate is immersed in a bath filled with a developing solution for a predetermined time (a dipping method), a method in which the developing solution is raised by surface tension on the substrate surface for a predetermined period of time A method of spraying a developer (spraying method), a method of continuously drawing a developer while scanning a developer introducing nozzle at a constant speed on a substrate rotating at a constant speed (dynamic dispensing method), and the like can be applied.

<Rinse process>

After the step of developing the organic solvent, a rinsing step may be carried out in which development is stopped while replacing with another solvent.

As the rinse solution used in the rinsing step after the organic solvent development, there is no particular limitation as long as the resist pattern is not dissolved, and a solution containing a general organic solvent can be used. As the rinsing liquid, it is preferable to use a rinsing liquid containing at least one organic solvent selected from a hydrocarbon hydrocarbon solvent, a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent and an ether solvent. More preferably, after the negative type development, a cleaning step is performed using a rinsing liquid containing at least one kind of organic solvent selected from a ketone type solvent, an ester type solvent, an alcohol type solvent and an amide type solvent. More preferably, after the negative-type development, a step of cleaning with a rinsing liquid containing an alcohol-based solvent or an ester-based solvent is performed. Particularly preferably, after the negative-type development, a step of rinsing with a rinsing liquid containing a monohydric alcohol is carried out. Examples of the monohydric alcohol used in the rinse process after the negative development include linear, branched, and cyclic monohydric alcohols. Specific examples thereof include 1-butanol, 2-butanol, 3-methyl Propanol, 1-pentanol, 1-hexanol, 1-heptanol, 1-octanol, 2-hexanol, 2-heptanol, 2-octanol , 3-hexanol, 3-heptanol, 3-octanol, 4-octanol and the like can be used, and preferable examples thereof include 1-hexanol, - Butanol.

A plurality of these components may be mixed, or they may be mixed with other organic solvents.

The water content in the rinsing liquid is preferably 10 mass% or less, more preferably 5 mass% or less, particularly preferably 3 mass% or less. By setting the moisture content to 10 mass% or less, good developing characteristics can be obtained.

The vapor pressure of the rinsing liquid used after organic solvent development is preferably 0.05 kPa or more and 5 kPa or less at 20 캜, more preferably 0.1 kPa or more and 5 kPa or less, most preferably 0.12 kPa or more and 3 kPa or less. By adjusting the vapor pressure of the rinsing liquid to 0.05 kPa or more and 5 kPa or less, temperature uniformity in the wafer surface is improved, swelling due to infiltration of the rinsing liquid is suppressed, and dimensional uniformity within the wafer surface is improved.

An appropriate amount of surfactant may be added to the rinse solution.

In the rinsing process, the wafer subjected to organic solvent development is subjected to a cleaning treatment using a rinsing liquid containing the organic solvent. The method of the rinsing treatment is not particularly limited, and examples thereof include a method (rotation coating method) of continuously extracting the rinsing liquid on a substrate rotating at a constant speed, a method of immersing the substrate in the rinsing bath (Dip method), a method of spraying a rinsing liquid onto the surface of a substrate (spray method), and the like can be applied. Among them, a cleaning treatment is carried out by a rotation coating method. After cleaning, the substrate is rotated at a rotation speed of 2000 rpm to 4000 rpm, It is preferable to remove the liquid from the substrate.

&Lt; Alkali development step &

The pattern forming method of the present invention may further include a step of performing development using an alkali developing solution.

Examples of the alkali developing solution include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and ammonia water, primary amines such as ethylamine and n-propylamine, primary amines such as diethylamine, , Tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tertiary amines such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, and tertiary amines such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. An alkaline aqueous solution such as cyclic amines such as a basic ammonium salt, pyrrole, and piperidine can be used. Among them, it is preferable to use an aqueous solution of tetraethylammonium hydroxide.

In addition, alcohols and surfactants may be added to the alkali developing solution in an appropriate amount.

The alkali concentration of the alkali developing solution is usually 0.01 to 20% by mass.

The pH of the alkali developing solution is usually from 10.0 to 15.0.

The time for developing with an alkali developing solution is usually 10 to 300 seconds.

The alkali concentration (and pH) of the alkali developing solution and the developing time can be appropriately adjusted according to the pattern to be formed.

As the rinse solution in the rinsing step performed after the alkali developing step, pure water may be used and an appropriate amount of surfactant may be added.

After the developing treatment or the rinsing treatment, the developer or rinsing liquid adhering to the pattern can be removed by supercritical fluid.

Further, after the rinsing treatment or the treatment with the supercritical fluid, a heat treatment may be performed to remove moisture remaining in the pattern.

[Heating process]

The pattern forming method of the present invention may further include a heating step or may include a heating step plural times.

The pattern forming method of the present invention is characterized in that the pattern forming method of the present invention is characterized in that in one form, after the formation of the actinic ray or radiation-sensitive film and / or the formation of the protective film, pre-heating (hereinafter referred to as "PB" Bake ")) process.

That is, in the pattern forming method of the present invention, the prebaking step may be included between the step of forming the actinic ray-sensitive or radiation-sensitive film and the step of forming the protective film, and includes a step of forming a protective film, And may include a prebake step in both of them. By the pre-baking, the insoluble residual solvent is removed, and a uniform film can be formed. Hereinafter, the pre-baking step performed between the step of forming the actinic ray-sensitive or radiation-sensitive film and the step of forming the protective film is referred to as a " PB step before forming the protective film ", and the step of forming the protective film and the step of exposing Is referred to as "PB process after formation of protective film" and the like.

The heating temperature in the PB step before forming the protective film is preferably, for example, 50 to 160 캜, more preferably 60 to 140 캜.

The heating temperature in the PB step after formation of the protective film is preferably, for example, 80 to 160 ° C, more preferably 100 to 150 ° C, more preferably 110 to 145 ° C, and more preferably 120 to 140 ° C Is particularly preferable. By increasing the prebake temperature after formation of the protective film, the low molecular components are more likely to collect on the resist film side of the topcoat, and the DOF improvement effect is further enhanced.

The compound (A) is preferably a compound which is not removed from the protective film by the PB process after formation of the protective film. The compound (A) is preferably, for example, a solvent different from the compound described below as a solvent for the actinic ray-sensitive or radiation-sensitive resin composition.

In another embodiment, the pattern forming method of the present invention preferably includes a post exposure bake (PEB) step after the exposure step and before the developing step. The reaction of the exposed portion is promoted by PEB, and the sensitivity and pattern profile are improved.

The heating temperature in the PEB step is preferably 40 占 폚 to 160 占 폚, for example.

The heating time is not particularly limited in any of the PB step and the PEB step, but is preferably 30 to 300 seconds, more preferably 30 to 180 seconds, and most preferably 30 to 90 seconds.

The heating can be performed by means provided in a conventional exposure and development apparatus, or may be performed using a hot plate or the like.

<Sensitive actinic ray or radiation sensitive resin composition>

Next, the actinic ray-sensitive or radiation-sensitive resin composition suitably used in the pattern forming method of the present invention will be described.

<Sensitive actinic ray or radiation sensitive resin composition>

(A) a resin whose polarity is increased by the action of an acid

The resin used in the active radiation-sensitive or radiation-sensitive resin composition of the present invention which exhibits an increased polarity by the action of an acid is a resin which decomposes by the action of an acid on the main chain or side chain of the resin, Acid-decomposable resin (A) "or" resin (A) ") having a group capable of generating an alkali-soluble group (hereinafter also referred to as an" acid-decomposable group " (Hereinafter referred to as "alicyclic hydrocarbon-based acid-decomposable resin") having a polycyclic alicyclic hydrocarbon structure and having a polarity increased by the action of an acid and having increased solubility in an alkali developer, ). Although the reason for this is not clear, it is presumed that the polarity of the resin is greatly changed before and after the irradiation of the actinic ray or radiation, whereby the positive developer (preferably an alkaline developer) and the negative developer ) Is used to improve the dissolution contrast in the case of development. Further, the resin having a monocyclic or polycyclic alicyclic hydrocarbon structure has a high hydrophobicity, and a region in which the light irradiation intensity of the actinic ray-sensitive or radiation-sensitive film is weak by a negative type developer (preferably organic solvent) It is considered that the developability in the case of the above-mentioned method is improved.

The actinic ray-sensitive or radiation-sensitive resin composition of the present invention containing a resin whose polarity increases by the action of an acid can be suitably used in the case of irradiating ArF excimer laser light.

Examples of the alkali-soluble group contained in the alicyclic hydrocarbon-based acid-decomposable resin include a phenolic hydroxyl group, a carboxylic acid group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonylimide group, (alkylsulfonyl) (alkylcarbonyl) methylene (Alkylsulfonyl) methylene group, a bis (alkylsulfonyl) imide group, a bis (alkylsulfonyl) imide group, , A tris (alkylcarbonyl) methylene group, and a group having a tris (alkylsulfonyl) methylene group.

Preferable examples of the alkali-soluble group include a carboxylic acid group, a fluorinated alcohol group (preferably, hexafluoro isopropanol), and a sulfonic acid group.

A preferable group as the acid decomposable group is a group in which the hydrogen atom of the alkali-soluble group is substituted with a group capable of leaving an acid.

The group to elimination with an acid, _{e.g., -C (R 36) (R} 37) (R 38), -C (R 36) (R 37) (OR 39), -C (R 01) (R 02 ) (OR ₃₉ ).

In the formulas, R ₃₆ to R ₃₉ each independently represent an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group. R ₃₆ and R ₃₇ may be bonded to each other to form a ring.

R ₀₁ to R ₀₂ each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.

The acid decomposable group is preferably a cumyl ester group, an enol ester group, an acetal ester group, or a tertiary alkyl ester group. More preferably, it is a tertiary alkyl ester group.

Examples of the alicyclic hydrocarbon-based acid-decomposable resin of the present invention include repeating units having a partial structure containing an alicyclic hydrocarbon represented by the following general formulas (pI) to (pV) and repeating units represented by the following general formula (II-AB) Is preferably a resin containing at least one kind selected from the group of repeating units.

(41)

Among the general formulas (pI) to (pV)

R ₁₁ represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group and Z represents an atomic group necessary for forming a cycloalkyl group together with a carbon atom.

Each of R ₁₂ to R ₁₆ independently represents a linear or branched alkyl group or cycloalkyl group having 1 to 4 carbon atoms. Provided that at least one of R ₁₂ to R ₁₄ , or any one of R ₁₅ and R ₁₆ represents a cycloalkyl group.

Each of R ₁₇ to R ₂₁ independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a cycloalkyl group. Provided that at least one of R ₁₇ to R ₂₁ represents a cycloalkyl group. Any one of R ₁₉ and R ₂₁ represents a linear or branched alkyl group or cycloalkyl group having 1 to 4 carbon atoms.

R ₂₂ to R ₂₅ each independently represent a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a cycloalkyl group. Provided that at least one of R ₂₂ to R ₂₅ represents a cycloalkyl group. R ₂₃ and R ₂₄ may be bonded to each other to form a ring.

(42)

Among the general formula (II-AB)

R ₁₁ 'and R ₁₂ ' each independently represent a hydrogen atom, a cyano group, a halogen atom or an alkyl group.

Z 'represents an atomic group containing two bonded carbon atoms (C-C) and forming an alicyclic structure.

It is more preferable that the formula (II-AB) is represented by the following formula (II-AB1) or (II-AB2).

(43)

Of the formulas (II-AB1) and (II-AB2)

R ₁₃ 'to R ₁₆ ' each independently represent a hydrogen atom, a halogen atom, a cyano group, -COOH, -COOR ₅ , a group which is decomposed by the action of an acid, -C (═O) '-R ₁₇ ', an alkyl group or a cycloalkyl group. At least two bond R _l3 '~ R _16' is to form a ring.

Here, R ₅ represents an alkyl group, a cycloalkyl group, or a group having a lactone structure.

X represents an oxygen atom, a sulfur atom, -NH-, -NHSO ₂ - or -NHSO ₂ NH-.

A 'represents a single bond or a divalent linking group.

R ₁₇ 'represents a group having -COOH, -COOR ₅ , -CN, a hydroxyl group, an alkoxy group, -CO-NH-R ₆ , -CO-NH-SO ₂ -R ₆ or a lactone structure.

R ₆ represents an alkyl group or a cycloalkyl group.

n represents 0 or 1;

In the formulas (pI) to (pV), the alkyl group in R ₁₂ to R ₂₅ represents a straight-chain or branched alkyl group having 1 to 4 carbon atoms.

The cycloalkyl group represented by R ₁₁ to R ₂₅ or the cycloalkyl group formed by Z and the carbon atom may be monocyclic or polycyclic. Specifically, a group having a monocycle having 5 or more carbon atoms, a bicyclo, a tricyclo, a tetracyclo structure, or the like can be given. The number of carbon atoms thereof is preferably from 6 to 30, particularly preferably from 7 to 25 carbon atoms. These cycloalkyl groups may have substituents.

Preferred examples of the cycloalkyl group include an adamantyl group, a noradamantyl group, a decalin residue, a tricyclododecanyl group, a tetracyclododecanyl group, a norbornyl group, a sidolyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, A decanyl group, and a cyclododecanyl group. More preferred examples thereof include an adamantyl group, a norbornyl group, a cyclohexyl group, a cyclopentyl group, a tetracyclododecanyl group and a tricyclodecanyl group.

Examples of the substituent of the alkyl group and the cycloalkyl group include an alkyl group (having 1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group (having 2 to 6 carbon atoms). Examples of the substituent which the above alkyl group, alkoxy group, alkoxycarbonyl group and the like may further have include a hydroxyl group, a halogen atom and an alkoxy group.

The structure represented by the general formulas (pI) to (pV) in the above resin can be used for protecting an alkali-soluble group. Examples of the alkali-soluble group include various groups known in the art.

Specifically, a structure in which a hydrogen atom of a carboxylic acid group, a sulfonic acid group, a phenol group or a thiol group is substituted with a structure represented by any one of formulas (pI) to (pV), and the like, and preferably a structure in which a hydrogen atom of a carboxylic acid group, (PI) to (pV).

As the repeating unit having an alkali-soluble group protected by the structure represented by the general formulas (pI) to (pV), a repeating unit represented by the following general formula (pA) is preferable.

(44)

Here, R represents a hydrogen atom, a halogen atom, or a linear or branched alkyl group having 1 to 4 carbon atoms. The plural Rs may be the same or different.

A is a single bond or a combination of two or more groups selected from the group consisting of a single bond, an alkylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amide group, a sulfonamide group, . Preferably a single bond.

Rp ₁ represents any one of the above-mentioned formulas (pI) to (pV).

The repeating unit represented by the general formula (pA) is particularly preferably a repeating unit derived from 2-alkyl-2-adamantyl (meth) acrylate, dialkyl (1-adamantyl) methyl (meth) to be.

Specific examples of the repeating unit represented by formula (pA) are shown below, but the present invention is not limited thereto.

[Chemical Formula 45]

(46)

Examples of the halogen atom in the general formulas (II-AB), R ₁₁ 'and R ₁₂ ' include a chlorine atom, a bromine atom, a fluorine atom, and an iodine atom.

Examples of the alkyl group for R ₁₁ 'and R ₁₂ ' include a linear or branched alkyl group having 1 to 10 carbon atoms.

The atomic group for forming the alicyclic structure of Z 'is an atomic group which forms a repeating unit of an alicyclic hydrocarbon which may have a substituent on a resin. Among them, a bridged polycyclic hydrocarbon group, which forms a repeating unit of a bridged alicyclic hydrocarbon, An atomic group for forming an alicyclic structure of the formula is preferable.

Examples of the alicyclic hydrocarbon skeleton to be formed include the same alicyclic hydrocarbon groups as R ₁₂ to R _{25 in} the formulas (pI) to (pV).

The skeleton of the alicyclic hydrocarbon may have a substituent. Examples of such a substituent include R ₁₃ 'to R ₁₆ ' in the general formula (II-AB1) or (II-AB2).

In the alicyclic hydrocarbon-based acid-decomposable resin according to the present invention, the group decomposed by the action of an acid is preferably a repeating unit having an alicyclic hydrocarbon-containing partial structure represented by any one of formulas (pI) to (pV) , A repeating unit represented by the general formula (II-AB), and a repeating unit of the following copolymerization component. The group decomposed by the action of an acid is preferably contained in a repeating unit having a partial structure containing an alicyclic hydrocarbon represented by the general formula (pI) to the general formula (pV).

The various substituents of R ₁₃ 'to R ₁₆ ' in the general formula (II-AB1) or the general formula (II-AB2) Or a substituent of the atomic group Z for forming a bridged alicyclic structure.

Examples of the repeating unit represented by the formula (II-AB1) or the formula (II-AB2) include the following specific examples, but the present invention is not limited to these specific examples.

(47)

The alicyclic hydrocarbon-based acid-decomposable resin of the present invention preferably has a lactone group. As the lactone group, any contribution can be used as far as it contains a lactone structure, preferably a group containing a 5- to 7-membered cyclic lactone structure, and a bicyclic structure and a spiro structure in a 5- to 7-membered cyclic lactone structure It is preferable that other ring structures are ringed. It is more preferable to have a repeating unit having a group having a lactone structure represented by any one of the following general formulas (LC1-1) to (LC1-16). The group having a lactone structure may be directly bonded to the main chain. Preferred examples of the lactone structure include those represented by the general formulas (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-13) Line edge roughness and development defects are improved.

(48)

The lactone structure moiety may or may not have a substituent (Rb ₂ ). Examples of the preferable substituent (Rb ₂ ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 8 carbon atoms, a carboxyl group, a halogen atom, An anion group, and an acid-decomposable group. n2 represents an integer of 0 to 4; when n2 is 2 or greater, Rb ₂ that there is a plurality, may be the same or different, and, again, there may be formed a plurality of ring is bonded between the _two Rb.

Of R ₁₃ '~ R _16' in general formula (LC1-1) ~ Examples of any one repeating unit having a group having a lactone structure represented the general formula (II-AB1) or (II-AB2) of (LC1-16) having at least one group represented by the general formula (LC1-1) ~ (LC1-16) (for example, the R ₅ of -COOR ₅ represents a group represented by the general formula (LC1-1) ~ (LC1-16)) , Or a repeating unit represented by the following general formula (AI).

(49)

Among the general formula (AI)

R _b0 represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms.

The preferable substituent which the alkyl group of R _b0 may have include a hydroxyl group and a halogen atom.

Examples of the halogen atom of R _b0 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

R _b0 is preferably a hydrogen atom or a methyl group.

A _b represents a divalent linking group having a single bond, an alkylene group, a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group, or a divalent group combining these groups. Preferably a single bond, a linking group represented by -Ab ₁ -CO ₂ -. Ab ₁ is a straight chain, branched alkylene group, monocyclic or polycyclic cycloalkylene group, and is preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group or a norbornylene group.

V represents a group represented by any one of the general formulas (LC1-1) to (LC1-16).

The repeating unit having a lactone structure usually has an optical isomer, and any of the optical isomers may be used. In addition, one kind of optical isomers may be used alone, or a plurality of optical isomers may be used in combination. When one kind of optical isomer is mainly used, the optical purity (ee) thereof is preferably 90 or more, more preferably 95 or more.

Specific examples of the repeating unit having a group having a lactone structure are set forth below, but the present invention is not limited thereto.

(50)

(51)

(52)

The alicyclic hydrocarbon-based acid-decomposable resin of the present invention preferably has a repeating unit containing an organic group having a polar group, particularly a repeating unit having an alicyclic hydrocarbon structure substituted with a polar group. This improves substrate adhesion and developer affinity. As the alicyclic hydrocarbon structure of the alicyclic hydrocarbon structure substituted with a polar group, adamanthyl group, dianthmyl group and novone are preferred. As the polar group, a hydroxyl group and a cyano group are preferable.

As the alicyclic hydrocarbon structure substituted with a polar group, a partial structure represented by the following general formulas (VIIa) to (VIId) is preferable.

(53)

Among the general formulas (VIIa) to (VIIc)

R _2c to R _4c each independently represent a hydrogen atom, a hydroxyl group or a cyano group. Provided that at least one of R _2c to R _4c represents a hydroxyl group or a cyano group. Preferably one or two of R _2c to R _4c are a hydroxyl group and the remainder is a hydrogen atom.

In formula (VIIa), two of R _2c to R _4c are more preferably a hydroxyl group and the remainder are hydrogen atoms.

As the repeating unit having a group represented by the general formulas (VIIa) to (VIId), at least one of R ₁₃ 'to R ₁₆ ' in the general formula (II-AB1) or (II- having a group represented (e.g., a represents an R ₅ in -COOR ₅ represented by the general formula (VIIa) ~ (VIId)) , or to the following formula (AIIa) ~, such as repeating unit represented by (AIId) .

(54)

Of the general formulas (AIIa) to (AIId)

R _1c represents a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

R _2c ~ R _4c is a ~ R _2c and R _4c agree in the general formula (VIIa) ~ (VIIc).

Specific examples of the repeating unit having a structure represented by formulas (AIIa) to (AIId) are set forth below, but the present invention is not limited thereto.

(55)

The alicyclic hydrocarbon-based acid-decomposable resin of the present invention may have a repeating unit represented by the following general formula (VIII).

(56)

In the above general formula (VIII)

Z ₂ represents -O- or -N (R ₄₁ ) -. R ₄₁ represents a hydrogen atom, a hydroxyl group, an alkyl group or -OSO ₂ -R ₄₂ . R ₄₂ represents an alkyl group, a cycloalkyl group or a camphor residue. The alkyl group of R ₄₁ and R ₄₂ may be substituted with a halogen atom (preferably a fluorine atom) or the like.

As the repeating unit represented by the above general formula (VIII), the following specific examples can be given, but the present invention is not limited thereto.

(57)

The alicyclic hydrocarbon-based acid-decomposable resin of the present invention preferably has a repeating unit having an alkali-soluble group, and more preferably a repeating unit having a carboxyl group. By including them, the resolution in the use of contact holes is increased. Examples of the repeating unit having a carboxyl group include a repeating unit in which a carboxyl group is directly bonded to a main chain of the resin such as a repeating unit derived from acrylic acid or methacrylic acid or a repeating unit in which a carboxyl group is bonded to the main chain of the resin through a connecting group, A polymerization initiator having a solubilizing group and a chain transfer agent are introduced at the end of the polymer chain by polymerization, and the linking group may have a monocyclic or polycyclic hydrocarbon structure. Particularly preferred is a repeating unit derived from acrylic acid or methacrylic acid.

The alicyclic hydrocarbon-based acid-decomposable resin of the present invention may also have a repeating unit having 1 to 3 groups represented by the general formula (F1). This improves line edge roughness performance.

(58)

Among the general formula (F1)

Each of R ₅₀ to R ₅₅ independently represents a hydrogen atom, a fluorine atom or an alkyl group. Provided that at least one of R ₅₀ to R ₅₅ represents a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom.

Rx represents a hydrogen atom or an organic group (preferably an acid-decomposable protecting group, an alkyl group, a cycloalkyl group, an acyl group, or an alkoxycarbonyl group).

The alkyl group of R ₅₀ to R ₅₅ may be substituted with a halogen atom such as a fluorine atom, a cyano group or the like, preferably an alkyl group having 1 to 3 carbon atoms, such as a methyl group and a trifluoromethyl group have.

It is preferable that all of R ₅₀ to R ₅₅ are fluorine atoms.

The organic group represented by Rx is preferably an acid-decomposable protecting group, an alkyl group, a cycloalkyl group, an acyl group, an alkylcarbonyl group, an alkoxycarbonyl group, an alkoxycarbonylmethyl group, an alkoxymethyl group or a 1-alkoxyethyl group which may have a substituent.

The repeating unit having a group represented by the general formula (F1) is preferably a repeating unit represented by the following general formula (F2).

[Chemical Formula 59]

Among the general formula (F2)

Rx represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. The preferable substituent which the alkyl group of Rx may have include a hydroxyl group and a halogen atom.

And Fa represents a single bond, a straight chain or branched alkylene group (preferably a single bond).

Fb represents a monocyclic or polycyclic cyclic hydrocarbon group.

Fc represents a single bond, a straight chain or branched alkylene group (preferably a single bond, a methylene group).

F ₁ represents a group represented by the general formula (F1).

P ₁ represents 1 to 3;

The cyclic hydrocarbon group in Fb is preferably a cyclopentylene group, a cyclohexylene group or a norbornylene group.

Specific examples of the repeating unit having a group represented by formula (F1) are shown, but the present invention is not limited thereto.

(60)

The alicyclic hydrocarbon-based acid-decomposable resin of the present invention may further contain a repeating unit which has an alicyclic hydrocarbon structure and does not exhibit acid decomposability. This makes it possible to reduce the elution of low-molecular components from the actinic ray-sensitive or radiation-sensitive film into the immersion liquid at the time of immersion exposure. As such a repeating unit,

For example, 1-adamantyl (meth) acrylate, tricyclodecanyl (meth) acrylate, cyclohexyl (meth) acrylate and the like.

The alicyclic hydrocarbon-based acid-decomposable resin of the present invention may contain, in addition to the repeating structural units described above, for the purpose of adjusting dry etching resistance, standard developer suitability, substrate adhesion, resist profile and resolution, heat resistance, And may contain various repeating structural units.

Such repeating structural units include repeating structural units corresponding to the following monomers, but are not limited thereto.

As a result, the performance required for the alicyclic hydrocarbon-based acid-decomposable resin,

(1) solubility in a coating solvent,

(2) Film formability (glass transition temperature),

(3) solubility in a positive developer and a negative developer,

(4) membrane reduction (selectable for hydrophilic, alkali soluble groups),

(5) adhesion of the unexposed portion to the substrate,

(6) dry etching resistance,

And the like can be finely adjusted.

Examples of such monomers include monomers having one addition polymerizable unsaturated bond selected from acrylic acid esters, methacrylic acid esters, acrylamides, methacrylamides, allyl compounds, vinyl ethers, Compounds and the like.

In addition, the addition polymerizable unsaturated compound copolymerizable with the monomers corresponding to the above various repeating structural units may be copolymerized.

In the alicyclic hydrocarbon-based acid-decomposable resin, the molar ratio of each repeating structural unit is adjusted by controlling the dry etching resistance of a resist, the standard developer suitability, the substrate adhesion, the resist profile, and furthermore, the resolving power, heat resistance, .

Preferred embodiments of the alicyclic hydrocarbon-based acid-decomposable resin of the present invention include the following.

(1) Containing a repeating unit having a partial structure containing an alicyclic hydrocarbon represented by the above general formulas (pI) to (pV) (side chain type).

Containing a (meth) acrylate repeating unit having a structure of (pI) to (pV).

(2) those containing a repeating unit represented by the general formula (II-AB) (main chain type).

However, in (2), for example, the following may be further added.

(3) a repeating unit represented by the general formula (II-AB), a maleic anhydride derivative and a (meth) acrylate structure (hybrid type).

The content of the repeating unit having an acid-decomposable group in the alicyclic hydrocarbon-based acid-decomposable resin is preferably 10 to 60 mol%, more preferably 20 to 50 mol%, and still more preferably 25 to 40 mol% Mol%.

The content of the repeating unit having an acid-decomposable group in the acid-decomposable resin is preferably 10 to 60 mol%, more preferably 20 to 50 mol%, and still more preferably 25 to 40 mol% in the total repeating structural units.

In the alicyclic hydrocarbon-based acid-decomposable resin, the content of the repeating unit having a partial structure containing alicyclic hydrocarbon represented by formulas (pI) to (pV) is preferably 20 to 70 mol% , More preferably 20 to 50 mol%, and still more preferably 25 to 40 mol%.

The content of the repeating unit represented by formula (II-AB) in the alicyclic hydrocarbon-based acid-decomposable resin is preferably from 10 to 60 mol%, more preferably from 15 to 55 mol% Is 20 to 50 mol%.

The content of the repeating unit having a lactone ring in the acid-decomposable resin is preferably 10 to 70 mol%, more preferably 20 to 60 mol%, and still more preferably 25 to 40 mol% in the total repeating structural units.

The content of the repeating unit having an organic group having a polar group in the acid-decomposable resin is preferably 1 to 40 mol%, more preferably 5 to 30 mol%, and still more preferably 5 to 20 mol% to be.

The content of the repeating structural unit based on the monomer of the additional copolymerization component in the resin can be appropriately set in accordance with the performance of the desired resist. Generally, the content of the alicyclic hydrocarbon represented by the general formulas (pI) to (pV) Is preferably 99 mol% or less, more preferably 90 mol% or less, further preferably 90 mol% or less based on the total molar amount of the repeating structural unit having the partial structure including the repeating unit represented by the formula (II-AB) Is 80 mol% or less.

When the actinic ray-sensitive or radiation-sensitive resin composition of the present invention is used for ArF exposure, it is preferable that the resin does not have an aromatic group in view of transparency to ArF light.

As the alicyclic hydrocarbon-based acid-decomposable resin to be used in the present invention, all repeating units are preferably composed of (meth) acrylate-based repeating units. In this case, any of the repeating units may be any of a methacrylate repeating unit, an acrylate repeating unit, and a methacrylate repeating unit / acrylate repeating unit in all of the repeating units, It is preferable that the acrylate-based repeating unit is 50 mol% or less of the total repeating units.

The (meth) acrylate-based repeating unit having a lactone ring, the (meth) acrylate-based repeating unit having an organic group substituted with at least one of a hydroxyl group and a cyano group, and a And a (meth) acrylate-based repeating unit having a repeating unit (s).

Preferably 20 to 50 mol% of repeating units having a partial structure containing an alicyclic hydrocarbon represented by formulas (pI) to (pV), 20 to 50 mol% of repeating units having a lactone structure, A ternary copolymerizable polymer containing 5 to 30 mol% of a repeating unit having a hydrocarbon structure, or a quaternary copolymerizable polymer containing 0 to 20% of other repeating units.

Particularly preferred resins are those containing 20 to 50 mol% of repeating units having an acid-decomposable group represented by the following general formulas (ARA-1) to (ARA-7), lactones represented by the following general formulas (ARL-1) to And a repeating unit having an alicyclic hydrocarbon structure substituted with a polar group represented by the following general formulas (ARH-1) to (ARH-3) , Or a quaternary copolymerizable polymer containing 5 to 20 mol% of a repeating unit having a carboxyl group or a structure represented by the general formula (F1) or a repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposability.

(Wherein Rxy ₁ represents a hydrogen atom or a methyl group, Rxa ₁ and Rxb ₁ each independently represent a methyl group or an ethyl group, and Rxc ₁ represents a hydrogen atom or a methyl group.

(61)

(Wherein Rxy ₁ represents a hydrogen atom or a methyl group, Rxd ₁ represents a hydrogen atom or a methyl group, and Rxe ₁ represents a trifluoromethyl group, a hydroxyl group or a cyano group.)

(62)

(Wherein Rxy ₁ represents a hydrogen atom or a methyl group).

(63)

The alicyclic hydrocarbon-based acid-decomposable resin used in the present invention can be synthesized by a conventional method (for example, radical polymerization). Examples of the general synthesis method include a batch polymerization method in which a monomer species and an initiator are dissolved in a solvent and heated to effect polymerization, a drop polymerization method in which a solution of a monomer species and an initiator is added dropwise to a heating solvent for 1 to 10 hours, And a dropwise polymerization method is preferable. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane and diisopropyl ether, ketones such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate, , Amide solvents such as dimethylacetamide, and solvents for dissolving the composition of the present invention, such as propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and cyclohexanone, which will be described later . More preferably, the polymerization is carried out by using the same solvent as the solvent used for the active radiation-sensitive or radiation-sensitive resin composition of the present invention. This makes it possible to suppress the generation of particles during storage.

The polymerization reaction is preferably carried out in an inert gas atmosphere such as nitrogen or argon. As the polymerization initiator, polymerization is initiated by using a commercially available radical initiator (azo type initiator, peroxide, etc.). As the radical initiator, azo-based initiators are preferable, and azo-based initiators having an ester group, a cyano group and a carboxyl group are preferable. Preferred initiators include azobisisobutyronitrile, azobisdimethylvaleronitrile, and dimethyl 2,2'-azobis (2-methylpropionate). An initiator is added according to the purpose or added in portions. After completion of the reaction, the polymer is added to a solvent to recover a desired polymer by a method such as powder or solid recovery. The concentration of the reactant is 5 to 50 mass%, preferably 10 to 30 mass%. The reaction temperature is usually from 10 to 150 캜, preferably from 30 to 120 캜, more preferably from 60 to 100 캜.

The purification may be carried out in the same manner as the resin (C) described later, and may be carried out by a liquid-liquid extraction method for removing residual monomers or oligomer components by washing with water or an appropriate solvent, a solution state such as ultrafiltration A method of refining in a solid state such as a reprecipitation method in which a resin is dripped into a poor solvent to solidify the resin in a poor solvent to remove residual monomer or the like, and a method in which a resin slurry after separation by filtration is washed with a poor solvent A purification method and the like can be applied.

The weight average molecular weight of the resin according to the present invention is preferably 1,000 to 200,000, more preferably 1,000 to 20,000, and most preferably 1,000 to 15,000 in terms of polystyrene by GPC method. By setting the weight average molecular weight to 1,000 to 200,000, deterioration of heat resistance and dry etching resistance can be prevented, deterioration of developability or viscosity and deterioration of film formability can be prevented.

The dispersion degree (molecular weight distribution) is usually 1 to 5, preferably 1 to 3, more preferably 1.2 to 3.0, and particularly preferably 1.2 to 2.0. The smaller the degree of dispersion, the better the resolution and the resist shape, and the sidewall of the resist pattern is smooth and the roughness is excellent.

In the active radiation-sensitive or radiation-sensitive resin composition of the present invention, the amount of the acid-decomposable resin to be incorporated in the entire composition is preferably 50 to 99.9 mass%, more preferably 60 to 99.0 mass%, of the total solid content.

In the present invention, the acid-decomposable resin may be used singly or in combination.

The aliphatic hydrocarbon-based acid-decomposable resin of the present invention, more preferably the active radiation-sensitive or radiation-sensitive resin composition of the present invention, is preferably an alicyclic hydrocarbon-based acid-decomposable resin containing no fluorine atom and silicon atom .

(B) a compound which generates an acid upon irradiation with an actinic ray or radiation

The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a compound (also referred to as a "photoacid generator" or "compound (B)") that generates an acid upon irradiation with an actinic ray or radiation.

Examples of such photoacid generators include photoinitiators for photocationic polymerization, photoinitiators for photo radical polymerization, photochromic agents for dyes, photochromic agents, and known compounds that generate an acid by irradiation with an actinic ray or radiation used in a micro- Compounds and mixtures thereof can be appropriately selected and used.

Examples thereof include diazonium salts, phosphonium salts, sulfonium salts, iodonium salts, imide sulfonates, oxime sulfonates, diazodisulfone, dysulfone and o-nitrobenzylsulfonate.

Also, a group or a group capable of generating an acid upon irradiation with these actinic rays or radiation is introduced into the main chain or side chain of the polymer, for example, compounds disclosed in U.S. Patent No. 3,849,137, German Patent Publication No. 3914407, Japanese Patent Application Laid-Open Nos. 63-26653, 55-164824, 62-69263, 63-146038, 63-163452, The compounds described in JP-A-62-153853, JP-A-63-146029, and the like can be used.

Compounds that generate an acid by the light described in U.S. Patent No. 3,779,778 and European Patent Publication No. 126,712 can also be used.

Among the compounds decomposing by irradiation with an actinic ray or radiation to generate an acid, compounds represented by the following general formulas (ZI), (ZII) and (ZIII) can be mentioned.

&Lt; EMI ID =

In the general formula (ZI), R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represent an organic group.

X ^- represents an unsubstituted anion, preferably a sulfonic acid anion, a carboxylic acid anion, a bis (alkylsulfonyl) amide anion, a tris (alkylsulfonyl) methide anion, BF ₄ ^- , PF ₆ ^- , SbF ₆ ^- , And preferably an organic anion containing a carbon atom.

The organic anion preferably includes organic anions represented by the following formulas.

(65)

Wherein,

Rc is _1, represents an organic group.

As the organic group in Rc ₁ , those having 1 to 30 carbon atoms can be enumerated. Preferably, the optionally substituted alkyl group, aryl group, or a plurality of these groups is a single bond, -O-, -CO ₂ -, -S -, -SO ₃ -, -SO ₂ N (Rd ₁ ) -, and the like. Rd ₁ represents a hydrogen atom or an alkyl group.

Rc _3, Rc _4, Rc ₅ each independently represent an organic group. As the organic group of Rc ₃ , Rc ₄ and Rc ₅ , preferable examples include the same organic groups as those of Rc ₁ , and most preferred are perfluoroalkyl groups having 1 to 4 carbon atoms.

Rc ₃ and Rc ₄ may combine to form a ring. Examples of the group formed by combining Rc ₃ and Rc ₄ include an alkylene group and an arylene group. And preferably a perfluoroalkylene group having 2 to 4 carbon atoms.

Rc _1, is a phenyl group substituted with an alkyl group in the alkyl group, a fluorine atom or fluorine-substituted, especially preferably an alkyl group 1 above is a fluorine atom or a perfluoroalkyl group as the organic group of Rc ₃ ~ Rc _5. By having a fluorine atom or a fluoroalkyl group, the acidity of the acid generated by the light irradiation is increased, and the sensitivity is improved. Further, the combination of Rc ₃ and Rc ₄ forms a ring to increase the acidity of the acid generated by light irradiation, thereby improving the sensitivity.

The number of carbon atoms of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is generally 1 to 30, preferably 1 to 20.

Also, R ₂₀₁ and R ~ form a ring structure by combining two of the dogs _203, may contain an oxygen atom, a sulfur atom, an ester bond in the ring, an amide bond, a carbonyl group. Examples of R groups to form ₂₀₁ ~ R ₂₀₃ 2 dogs in combination of, there may be mentioned an alkylene group (e.g., tert-butyl group, a pentylene group).

Specific examples of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ include corresponding groups in the following compounds (ZI-1), (ZI-2) and (ZI-3).

Further, a compound having a plurality of structures represented by the general formula (ZI) may be used. For example, at least one of R ₂₀₁ to R ₂₀₃ of the compound represented by formula (ZI) is a compound having a structure bonded to at least one of R ₂₀₁ to R ₂₀₃ of another compound represented by formula (ZI) do.

Examples of the preferable (ZI) component include the following compounds (ZI-1), (ZI-2) and (ZI-3).

The compound (ZI-1) is an arylsulfonium compound in which at least one of R ₂₀₁ to R ₂₀₃ in the general formula (ZI) is an aryl group, that is, a compound in which arylsulfonium is a cation.

Aryl sulfonium compounds, R ₂₀₁ ~ R ₂₀₃ are all aryl contribution, R ₂₀₁ ~ R ₂₀₃ is part of an aryl group, and the remaining credit is alkyl, cycloalkyl.

Examples of the arylsulfonium compound include a triarylsulfonium compound, a diarylalkylsulfonium compound, an aryl dialkylsulfonium compound, a diarylcycloalkylsulfonium compound, and an aryldicycloalkylsulfonium compound.

The aryl group of the arylsulfonium compound is preferably a heteroaryl group such as an aryl group such as a phenyl group or a naphthyl group, an indole residue or a pyrrole residue, more preferably a phenyl group or an indole residue. When the arylsulfonium compound has two or more aryl groups, the aryl groups present in two or more groups may be the same or different.

The alkyl group optionally possessed by the arylsulfonium compound is preferably a straight chain or branched alkyl group having 1 to 15 carbon atoms, and examples thereof include a methyl group, ethyl group, propyl group, n-butyl group, sec- Butyl group and the like.

The cycloalkyl group that the arylsulfonium compound optionally has is preferably a cycloalkyl group having 3 to 15 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.

R ₂₀₁ ~ aryl group, an alkyl group, a cycloalkyl group of R ₂₀₃ is an alkyl group (e.g., having from 1 to 15 carbon atoms), a cycloalkyl group, an aryl group (for example, the carbon number of 6 to 14 g) (for example, a carbon number of 3 to 15 g), An alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, and a phenylthio group. Preferred examples of the substituent include a linear or branched alkyl group having 1 to 12 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, a linear, branched or cyclic alkoxy group having 1 to 12 carbon atoms, particularly preferably an alkyl group having 1 to 4 carbon atoms, Alkoxy group having 1 to 4 carbon atoms. The substituent may be substituted in any one of three R ₂₀₁ to R ₂₀₃ , or may be substituted in all three of R ₂₀₁ to R ₂₀₃ . When R ₂₀₁ to R ₂₀₃ are aryl groups, the substituent is preferably substituted on the p- side of the aryl group.

Next, the compound (ZI-2) is described. The compound (ZI-2) is a compound in which R ₂₀₁ to R ₂₀₃ in the formula (ZI) each independently represent an organic group not containing an aromatic ring. Here, the aromatic ring includes an aromatic ring containing a hetero atom.

The organic group containing no aromatic ring as R ₂₀₁ to R ₂₀₃ generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.

R ₂₀₁ to R ₂₀₃ are each independently preferably an alkyl group, a cycloalkyl group, an allyl group or a vinyl group, more preferably a straight chain, branched, cyclic 2-oxoalkyl group, alkoxycarbonylmethyl group, , Branched 2-oxoalkyl group.

R ₂₀₁ ~ alkyl group as R ₂₀₃ is a straight chain, branched, it may be any of the gas phase, preferably, for a straight-chain or branched alkyl group (e.g., having 1 to 10 carbon atoms, a methyl group, an ethyl group, a propyl group, a view group, a pentyl group ). Alkyl group as R ₂₀₁ ~ R ₂₀₃ is preferably a straight-chain or branched 2-oxoalkyl group, alkoxycarbonyl group.

R is the cycloalkyl group as R ₂₀₁ ~ ₂₀₃ are, preferably, there may be mentioned a cycloalkyl group having 3 to 10 carbon atoms (cyclopentyl group, cyclohexyl group, norbornene group). Cycloalkyl group as R ₂₀₁ ~ R ₂₀₃ is preferably a cyclic 2-oxoalkyl group.

The straight-chain, branched or cyclic 2-oxoalkyl group as R ₂₀₁ to R ₂₀₃ is preferably a group having> C = O above the above-mentioned alkyl group or cycloalkyl group.

As the R ₂₀₁ ~ R ₂₀₃ as an alkoxycarbonyl group the alkoxy group of the, preferably there may be mentioned an alkoxy group having a carbon number of 1 to 5 (a methoxy group, an ethoxy group, a propoxy group, byutok group, a pentoxy group).

R ₂₀₁ to R ₂₀₃ may be further substituted by a halogen atom, an alkoxy group (for example, having 1 to 5 carbon atoms), a hydroxyl group, a cyano group or a nitro group.

The compound (ZI-3) is a compound represented by the following general formula (ZI-3) and is a compound having a phenacylsulfonium salt structure.

(66)

In the general formula (ZI-3)

R _1c to R _5c each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group or a halogen atom.

R _6c and R _7c each independently represent a hydrogen atom, an alkyl group or a cycloalkyl group.

Rx and Ry each independently represent an alkyl group, a cycloalkyl group, an allyl group or a vinyl group.

Any two or more of R _1c to R _7c and R _x and R _y may be bonded to each other to form a ring structure, and the ring structure may contain an oxygen atom, a sulfur atom, an ester bond, or an amide bond . _Examples of the group formed by combining any two or more of R _1c to R _7c and R _x and R _y include a butylene group and a pentylene group.

X ^- represents an unconjugated anion and includes the same as the non-nucleophilic anion of X &lt; ^- &gt; in the general formula (ZI).

The alkyl group as R _1c to R _7c may be either linear or branched and may be, for example, a linear or branched alkyl group having 1 to 20 carbon atoms, preferably a linear or branched alkyl group having 1 to 12 carbon atoms For example, a methyl group, an ethyl group, a straight chain or branched propyl group, a straight chain or branched butyl group, a straight chain or branched pentyl group).

The cycloalkyl group as R _1c to R _7c is preferably a cycloalkyl group having 3 to 8 carbon atoms (for example, cyclopentyl group, cyclohexyl group).

The alkoxy group as R _1c to R _5c may be any of linear, branched and cyclic alkoxy groups, for example, an alkoxy group having 1 to 10 carbon atoms, preferably a straight chain and branched alkoxy group having 1 to 5 carbon atoms (for example, A linear or branched propoxy group, a straight or branched propoxy group, a straight chain or branched butoxy group, a straight chain or branched pentoxy group), a cyclic alkoxy group having 3 to 8 carbon atoms (e.g., cyclopentyloxy group, cyclohexyloxy group) .

Preferably, any one of R _1c to R _5c is a straight-chain or branched alkyl group, a cycloalkyl group, or a straight-chain, branched or cyclic alkoxy group, more preferably the sum of the carbon numbers of R _1c to R _5c is 2 to 15. As a result, the solvent solubility is further improved, and generation of particles during storage is suppressed.

The alkyl group as R _x and R _y may be the same as the alkyl group as R _1c to R _7c . The alkyl group as R _x and R _y is preferably a linear or branched 2-oxoalkyl group or an alkoxycarbonylmethyl group.

The cycloalkyl group as R _x and R _y is the same as the cycloalkyl group as R _1c to R _7c . The cycloalkyl group as R _x and R _y is preferably a cyclic 2-oxoalkyl group.

The straight chain, branched or cyclic 2-oxoalkyl group may be an alkyl group as R _1c to R _{7c or} a group having> C═O on the second position of the cycloalkyl group.

The alkoxy group in the alkoxycarbonylmethyl group may be the same as the alkoxy group as R _1c to R _5c .

R _x and R _y are preferably an alkyl group having 4 or more carbon atoms, more preferably 6 or more, and still more preferably 8 or more alkyl groups.

Among the general formulas (ZII) and (ZIII)

Each of R ₂₀₄ to R ₂₀₇ independently represents an aryl group, an alkyl group or a cycloalkyl group.

The aryl group represented by R ₂₀₄ to R ₂₀₇ is preferably a phenyl group or a naphthyl group, more preferably a phenyl group.

The alkyl group as R ₂₀₄ ~ R ₂₀₇ is a straight chain, branched, it may be any of the gas phase, preferably, for a straight-chain or branched alkyl group (e.g., having 1 to 10 carbon atoms, a methyl group, an ethyl group, a propyl group, a view group, a pentyl group ).

The cycloalkyl group as R ₂₀₄ to R ₂₀₇ preferably includes a cycloalkyl group having 3 to 10 carbon atoms (cyclopentyl group, cyclohexyl group, and norbornyl group).

R ₂₀₄ to R ₂₀₇ may have a substituent. Examples of the substituent which R ₂₀₄ to R ₂₀₇ may have include an alkyl group (for example, having 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms), an aryl group (for example, , An alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, a phenylthio group, and the like.

X ^- represents an unconjugated anion and includes the same as the non-nucleophilic anion of X &lt; ^- &gt; in the general formula (ZI).

Among the compounds capable of generating an acid upon irradiation with an actinic ray or radiation, compounds represented by the following general formulas (ZIV), (ZV) and (ZVI) can be mentioned.

(67)

Among the general formulas (ZIV) to (ZVI)

Ar ₃ and Ar ₄ each independently represent an aryl group.

R ₂₂₆ represents an alkyl group or an aryl group.

R ₂₂₇ and R ₂₂₈ each independently represent an alkyl group, an aryl group or an electron-withdrawing group. R ₂₂₇ is preferably an aryl group.

R ₂₂₈ is preferably an electron-withdrawing group, more preferably a cyano group or a fluoroalkyl group.

A represents an alkylene group, an alkenylene group or an arylene group.

As compounds capable of generating an acid upon irradiation with an actinic ray or radiation, compounds represented by formulas (ZI) to (ZIII) are preferred.

The compound (B) is preferably a compound which generates an aliphatic sulfonic acid having a fluorine atom or a benzenesulfonic acid having a fluorine atom by irradiation with actinic rays or radiation.

The compound (B) preferably has a triphenylsulfonium structure.

The compound (B) is preferably a triphenylsulfonium salt compound having an alkyl group or a cycloalkyl group which is not fluorine-substituted in the cation moiety.

Of the compounds capable of generating an acid upon irradiation with an actinic ray or radiation, particularly preferred examples are shown below.

(68)

(69)

(70)

(71)

(72)

(73)

The photoacid generators may be used alone or in combination of two or more. When two or more kinds are used in combination, it is preferable to combine compounds that generate two kinds of organic acids in which the total number of atoms other than hydrogen atoms is 2 or more.

The content of the photoacid generator is preferably from 0.1 to 20% by mass, more preferably from 0.5 to 10% by mass, and still more preferably from 1 to 20% by mass, based on the total solid content of the actinic ray- 7% by mass. By setting the content of the photoacid generator within this range, it is possible to improve the exposure margin when the resist pattern is formed and to improve the crosslinking reactivity with the crosslinking layer forming material.

(C) Solvent

The active ray-sensitive or radiation-sensitive resin composition of the present invention may contain a solvent. Examples of the solvent that can be used in dissolving each of the above components to prepare the active radiation-sensitive or radiation-sensitive resin composition include alkylene glycol monoalkyl ether carboxylates, alkylene glycol monoalkyl ethers, Examples of the solvent include lactic acid alkyl ester, alkyl alkoxypropionate, cyclic lactone having 4 to 10 carbon atoms, monoketone compound having 4 to 10 carbon atoms, which may contain a ring, alkylene carbonate, alkyl alkoxyacetate and alkyl pyruvate.

The alkylene glycol monoalkyl ether carboxylate includes, for example, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol Monobutyl ether acetate, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate .

The alkylene glycol monoalkyl ether includes, for example, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, Ethylene glycol monomethyl ether, and ethylene glycol monoethyl ether.

As the lactic acid alkyl ester, for example, methyl lactate, ethyl lactate, propyl lactate, and butyl lactate are preferably used.

As the alkyl alkoxypropionate, for example, ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate and ethyl 3-methoxypropionate are preferably used.

Examples of the cyclic lactone having 4 to 10 carbon atoms include, for example,? -Propiolactone,? -Butyrolactone,? -Butyrolactone,? -Methyl-? -Butyrolactone,? -Methyl- ,? -valerolactone,? -caprolactone,? -octanoic lactone, and? -hydroxy-? -butyrolactone.

Examples of the monoketone compound having 4 to 10 carbon atoms and containing a ring include 2-butanone, 3-methylbutanone, pinacolone, 2-pentanone, 3-pentanone, Methyl-2-pentanone, 4,4-dimethyl-2-pentanone, 2,4-dimethyl-3-pentanone, 2,2,4 Methyl-3-hexanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-methyl-3 3-heptanone, 2-octanone, 3-octanone, 2-nonanone, 3-nonanone, 5-nonanone, 2-one, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopentanone, 2-decanone, 3-decanone, 4-decanone, , 2-dimethylcyclopentanone, 2,4,4-trimethylcyclopentanone, cyclohexanone, 3-methylcyclohexanone, 4-methylcyclohexanone, 4-ethylcyclohexanone, 2,2- Dimethyl cyclohexanone, 2,6-dimethyl cyclohexanone, 2,2,6-tris Preferred examples thereof include methylcyclohexanone, cycloheptanone, 2-methylcycloheptanone and 3-methylcycloheptanone.

As the alkylene carbonate, for example, propylene carbonate, vinylene carbonate, ethylene carbonate, and butylene carbonate are preferably used.

Examples of the alkyl alkoxyacetate include 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2- (2-ethoxyethoxy) acetic acid ethyl, 3-methoxy- , And acetic acid-1-methoxy-2-propyl.

As the alkyl pyruvate, for example, methyl pyruvate, ethyl pyruvate and propyl pyruvate are preferably used.

As the solvent which can be preferably used, a solvent having a boiling point of 130 캜 or higher can be mentioned under ordinary temperature and normal pressure. Specific examples thereof include cyclopentanone,? -Butyrolactone, cyclohexanone, ethyl lactate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, ethyl 3-ethoxypropionate, ethyl pyruvate , 2-ethoxyethyl acetate, 2- (2-ethoxyethoxy) ethyl acetate and propylene carbonate. Butyl isobutyl acetate, isoamyl acetate and methyl 2-hydroxyisobutyrate may be used as a solvent.

In the present invention, the above-mentioned solvents may be used alone, or two or more of them may be used in combination.

In the present invention, a mixed solvent obtained by mixing a solvent containing a hydroxyl group and a solvent not containing a hydroxyl group in the structure may be used as the organic solvent.

Examples of the solvent containing a hydroxyl group include ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monomethyl ether, Ethyl lactate, etc. Among them, propylene glycol monomethyl ether and ethyl lactate are particularly preferable.

Examples of the solvent not containing a hydroxyl group include propylene glycol monomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone,? -Butyrolactone, cyclohexanone, butyl acetate, N-methyl Propyleneglycol monomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide and the like. Particularly preferred are lactolone, cyclohexanone and butyl acetate, and propylene glycol monomethyl ether acetate, ethyl ethoxypropionate and 2-heptanone are most preferred.

The mixing ratio (mass) of the hydroxyl group-containing solvent to the hydroxyl group-containing solvent is from 1/99 to 99/1, preferably from 10/90 to 90/10, more preferably from 20/80 to 60/40 . A mixed solvent containing 50 mass% or more of a solvent not containing a hydroxyl group is particularly preferable in view of coating uniformity.

The solvent is preferably two or more mixed solvents containing propylene glycol monomethyl ether acetate.

(D) a basic compound

The active photopolymerizable or radiation-sensitive resin composition of the present invention preferably contains (E) a basic compound in order to reduce the performance change over time from exposure to heating.

The basic compound is preferably a compound having a structure represented by the following formulas (A) to (E).

&Lt; EMI ID =

Among the general formulas (A) to (E)

R ²⁰⁰ , R ²⁰¹ and R ²⁰² may be the same or different and each represents a hydrogen atom, an alkyl group (preferably having 1 to 20 carbon atoms), a cycloalkyl group (preferably having 3 to 20 carbon atoms) ), Wherein R ²⁰¹ and R ²⁰² may be bonded to each other to form a ring.

As the alkyl group having a substituent for the alkyl group, an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms is preferable.

R ²⁰³ , R ²⁰⁴ , R ²⁰⁵ and R ²⁰⁶ may be the same or different and each represents an alkyl group having 1 to 20 carbon atoms.

The alkyl groups in the general formulas (A) to (E) are more preferably unoriented.

Preferred examples of the compound include guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine, piperidine and the like. More preferred compounds include imidazole structure, diazabicyclic An onium hydroxide structure, an onium carboxylate structure, a trialkylamine structure, an aniline structure or a pyridine structure, an alkylamine derivative having a hydroxyl group and / or an ether bond, an aniline derivative having a hydroxyl group and / or an ether bond, etc. .

Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, and benzimidazole. Examples of the compound having a diazabicyclo structure include 1,4-diazabicyclo [2,2,2] octane, 1,5-diazabicyclo [4,3,0] Javancyclo [5,4,0] undec-7-ene, and the like. Examples of the compound having an onium hydroxide structure include triarylsulfonium hydroxide, phenacysulfonium hydroxide, sulfonium hydroxide having a 2-oxoalkyl group, specifically, triphenylsulfonium hydroxide, tris (t -Butylphenyl) sulfonium hydroxide, bis (t-butylphenyl) iodonium hydroxide, phenacylthiophenium hydroxide, 2-oxopropylthiophenium hydroxide and the like. As the compound having an onium carboxylate structure, the anion portion of the compound having an onium hydroxide structure is converted to a carboxylate, and examples thereof include acetate, adamantane-1-carboxylate and perfluoroalkyl carboxylate . Examples of the compound having a trialkylamine structure include tri (n-butyl) amine and tri (n-octyl) amine. Examples of the aniline compound include 2,6-diisopropylaniline, N, N-dimethylaniline, N, N-dibutyl aniline and N, N-dibutylaniline. Examples of the alkylamine derivative having a hydroxyl group and / or an ether bond include ethanolamine, diethanolamine, triethanolamine, tris (methoxyethoxyethyl) amine and the like. Examples of the aniline derivative having a hydroxyl group and / or an ether bond include N, N-bis (hydroxyethyl) aniline and the like.

These basic compounds may be used alone or in combination of two or more.

The amount of the basic compound to be used is usually 0.001 to 10% by mass, preferably 0.01 to 5% by mass, based on the solid content of the actinic ray-sensitive or radiation-sensitive resin composition.

The ratio of the acid generator to the basic compound in the composition is preferably from 2.5 to 300 as the acid generator / basic compound (molar ratio). That is, the molar ratio is preferably 2.5 or more in terms of sensitivity and resolution, and is preferably 300 or less from the viewpoint of suppressing reduction in resolution due to thickening of the resist pattern with time after exposure to heat treatment. The acid generator / basic compound (molar ratio) is more preferably 5.0 to 200, and still more preferably 7.0 to 150.

(E) Hydrophobic resin

The active ray-sensitive or radiation-sensitive resin composition of the present invention may further contain a hydrophobic resin. As the hydrophobic resin, those having at least one of a fluorine atom, a silicon atom, and a CH ₃ partial structure contained in the side chain portion of the resin can be suitably used. Specifically, the same resin as the resin (X) contained in the protective film forming composition described above can be used.

(F) Surfactant

The fluorine-containing and / or radiation-sensitive resin composition of the present invention preferably further contains (F) a surfactant. The fluorine-containing and / or silicon-based surfactant (fluorine-containing surfactant, Surfactant having both of them), or more preferably two or more of them.

By containing the (F) surfactant in the active radiation-sensitive or radiation-sensitive resin composition of the present invention, it is possible to provide a photosensitive resin composition which is excellent in sensitivity and resolution and has low adhesion and development defects when using an exposure light source of 250 nm or less, A resist pattern can be provided.

As the fluorine-based and / or silicon-based surfactants, there can be mentioned, for example, JP-A 62-36663, JP-A 61-226746, JP-A 61-226745, JP-A 62-170950 Japanese Patent Application Laid-Open No. 63-34540, Japanese Patent Application Laid-Open No. 7-230165, Japanese Patent Application Laid-Open No. 8-62834, Japanese Laid-Open Patent Application No. 9-54432, Japanese Laid-Open Patent Publication No. 9-5988 Surfactants described in Japanese Patent Application Laid-Open No. 2002-277862, U.S. Patent Nos. 5405720, 5360692, 5529881, 5296330, 5436098, 5576143, 5294511 and 5824451 And the following surfactants commercially available may be used as they are.

Examples of commercially available surfactants that can be used include surfactants such as EFtop EF301 and EF303 (manufactured by Shin-Akita Kasei Corporation), Fluorad FC430, 431 and 4430 (manufactured by Sumitomo 3M Co., Ltd.), Megafac F171, F173 and F176 , Surflon S-382, SC101, 102, 103, 104, 105 and 106 (manufactured by Asahi Glass Co., Ltd.), F189, F113, F110, F177, F120 and R08 (manufactured by Dainippon Ink and Chemicals, , GF-300, GF-150 (manufactured by Toagosei Chemical Industry Co., Ltd.), Surflon S-393 (manufactured by Seiyi Chemical Co., Ltd.) FTX-204D, 208G, 218G, 230G (manufactured by OMNOVA), PF636, PF656, PF6320, PF652 (manufactured by OMNOVA), EF121, EF122A, EF122B, RF122C, EF125M, EF135M, EF351, 352, EF801, EF802, EF601 , 204D, 208D, 212D, 218, and 222D (manufactured by Neos Co., Ltd.), and silicone surfactants. Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can also be used as a silicone surfactant.

In addition to the known surfactants described above, examples of the surfactant include fluorosurfactants derived from fluoroaliphatic compounds prepared by the telomerization method (also referred to as the telomer method) or the oligomerization method (also referred to as the oligomer method) A surfactant using a polymer having an aliphatic group can be used. The fluoroaliphatic compound can be synthesized according to the method described in JP-A-2002-90991.

As the polymer having a fluoroaliphatic group, a copolymer of a monomer having a fluoroaliphatic group and a (poly (oxyalkylene)) acrylate and / or a (poly (oxyalkylene)) methacrylate is preferable and is distributed irregularly Or may be block-copolymerized. Examples of the poly (oxyalkylene) group include a poly (oxyethylene) group, a poly (oxypropylene) group and a poly (oxybutylene) group, and also poly (oxyethylene, oxypropylene and oxyethylene Or a poly (block-linked product of oxyethylene and oxypropylene), or a unit having alkylene having different chain length in the same chain. Further, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate (or methacrylate) is not limited to a binary copolymer but also a monomer having two or more different fluoroaliphatic groups, (Poly (oxyalkylene)) acrylate (or methacrylate) or the like may be copolymerized at the same time.

Examples of commercially available surfactants include Megacopak F178, F-470, F-473, F-475, F-476 and F-472 (manufactured by Dainippon Ink and Chemicals, Incorporated). In addition, copolymers of (meth) acrylate (or methacrylate) and (poly (oxyalkylene)) acrylate (or methacrylate) having C ₆ F ₁₃ groups, acrylates having C ₃ F ₇ groups ) And copolymers of (poly (oxyethylene)) acrylate (or methacrylate) and (poly (oxypropylene)) acrylate (or methacrylate).

In the present invention, surfactants other than fluorine-based and / or silicon-based surfactants may also be used. Specific examples thereof include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether and polyoxyethylene oleyl ether, polyoxyethylene octyl phenol ether , Polyoxyethylene alkyl allyl ethers such as polyoxyethylene nonylphenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitol Polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, Polyoxyethylene sorbitan fatty acid esters such as ethylene propylene tereolate, polyoxyethylene sorbitan sesquioleate, , And the like.

These surfactants may be used alone or in combination of several.

The amount of the surfactant (F) to be used is preferably 0.01 to 10% by mass, more preferably 0.1 to 5% by mass, based on the total amount of the actinic ray-sensitive or radiation-sensitive resin composition (excluding the solvent).

(G) Carboxylic acid onium salt

The actinic ray-sensitive or radiation-sensitive resin composition in the present invention may contain (G) a carboxylic acid onium salt. Examples of the carboxylic acid onium salt include a carboxylic acid sulfonium salt, a carboxylic acid iodonium salt, and a carboxylic acid ammonium salt. Particularly, as the (G) carboxylic acid onium salt, an iodonium salt or a sulfonium salt is preferable. It is also preferable that the carboxylate residue of the (H) carboxylic acid onium salt of the present invention does not contain an aromatic group or a carbon-carbon double bond. As a particularly preferable anion moiety, a linear, branched, monocyclic or polycyclic cyclic alkylcarboxylic acid anion having 1 to 30 carbon atoms is preferable. More preferably an anion of a carboxylic acid in which a part or all of these alkyl groups are fluorine-substituted. The alkyl chain may contain an oxygen atom. As a result, transparency to light of 220 nm or less is ensured, sensitivity and resolving power are improved, density dependency and exposure margin are improved.

Examples of the anion of the fluorine-substituted carboxylic acid include fluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, pentafluoropropionic acid, heptafluorobutyric acid, nonafluoropentanoic acid, perfluorododecanoic acid, perfluorotridecane Acid, perfluorocyclohexanecarboxylic acid, and an anion of 2,2-bistrifluoromethylpropionic acid.

These (G) carboxylic acid onium salts can be synthesized by reacting sulfonium hydroxide, iodonium hydroxide, ammonium hydroxide and carboxylic acid with silver oxide in a suitable solvent.

The content of the (G) carboxylic acid onium salt in the composition is generally 0.1 to 20 mass%, preferably 0.5 to 10 mass%, and more preferably 1 to 7 mass%, based on the total solid content of the composition.

(H) Other additives

To the active radiation-sensitive or radiation-sensitive resin composition of the present invention, a compound which accelerates the solubility in a dye, a plasticizer, a photosensitizer, a light absorber, an alkali-soluble resin, a dissolution inhibitor and a developer (for example, A phenol compound having a molecular weight of 1000 or less, an alicyclic group having a carboxyl group, or an aliphatic compound), and the like.

Such a phenol compound having a molecular weight of 1,000 or less is described in, for example, Japanese Unexamined Patent Application Publication No. 4-122938, Japanese Unexamined Patent Publication No. 2-28531, US Patent No. 4,916, 210, European Patent Publication No. 219294 And can be easily synthesized by those skilled in the art.

Specific examples of alicyclic or aliphatic compounds having a carboxyl group include carboxylic acid derivatives having a steroid structure such as cholic acid, deoxycholic acid and lithocholic acid, adamanthanecarboxylic acid derivatives, adamantanedicarboxylic acid, cyclohexanecarboxylic acid, cyclohexanecarboxylic acid, Dicarboxylic acid, and the like, but are not limited thereto.

The organic solvent developing solution, the alkali developing solution and / or the rinsing solution which can be used in the present invention preferably have few impurities such as various kinds of fine particles and metallic elements. In order to obtain such a chemical solution having a small amount of impurities, these chemical solutions are prepared in a clean room, and filtration is performed by various filters such as a Teflon (registered trademark) filter, a polyolefin filter, and an ion exchange filter to reduce impurities . It is preferable that the metal element concentration of the metal elements of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn is all 10ppm or less and more preferably 5ppm or less.

The storage container for developer or rinse liquid is not particularly limited and a container such as a polyethylene resin, a polypropylene resin, or a polyethylene-polypropylene resin which is used for electronic materials can be suitably used. In order to reduce the impurities, it is also preferable to select a container having a small amount of component eluted from the inner wall of the container with the chemical liquid. As such a container, a container in which the inner wall of the container is made of a perfluororesin (for example, a Fluoro Pure PFA composite drum (liquid contact inner surface; PFA resin lining) manufactured by Entegris, a forced drum .

(For example, a developer, a rinse liquid, a composition for forming an antireflection film, a composition for forming a top coat, etc.) used in the pattern forming method of the present invention, It is preferable that it does not contain impurities such as metals. The content of the metal component contained in these materials is preferably 10 ppm or less, more preferably 5 ppm or less, more preferably 1 ppm or less, and particularly preferably substantially no content (less than the detection limit of the measuring apparatus) .

Examples of the method for removing impurities such as metals from the various materials include filtration using a filter. The filter hole diameter is preferably 50 nm or less in pore size, more preferably 10 nm or less, and more preferably 5 nm or less. As the material of the filter, a filter made of polytetrafluoroethylene, polyethylene or nylon is preferable. In the filter filtering step, a plurality of types of filters may be connected in series or in parallel. When a plurality of types of filters are used, filters having different hole diameters and / or different materials may be used in combination. In addition, the various materials may be filtered a plurality of times, and the step of filtering a plurality of times may be a circulating filtration step.

As a method for reducing impurities such as metals contained in the above various materials, a method of selecting a raw material having a small metal content as a raw material constituting various materials or filtering the raw material constituting various kinds of materials . Preferable conditions for filter filtration performed on raw materials constituting various materials are the same as those described above.

In addition to filter filtration, impurities may be removed by the adsorbent, or a combination of filter filtration and adsorbent may be used. As the adsorbent, known adsorbents can be used. For example, inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon can be used.

The organic-based treatment liquid (developer, rinse liquid or the like) of the present invention is preferably used in an amount sufficient to prevent electrostatic charge, May be added. The conductive compound is not particularly limited, and for example, methanol may be mentioned. The addition amount is not particularly limited, but is preferably not more than 10% by mass, more preferably not more than 5% by mass from the viewpoint of maintaining desirable developing characteristics. As for the member of the chemical liquid pipe, various pipes coated with SUS (stainless steel) or polyethylene, polypropylene, or fluorine resin (polytetrafluoroethylene, perfluoroalkoxy resin, etc.) subjected to antistatic treatment may be used . As for the filter and the O-ring, polyethylene, polypropylene, or a fluorine resin (polytetrafluoroethylene, perfluoroalkoxy resin, etc.) subjected to antistatic treatment may also be used.

The pattern formed by the method of the present invention is typically used as a mask in an etching process of semiconductor fabrication, but can also be used for other purposes. Other applications include the formation of guide patterns in DSA (Directed Self-Assembly) (see ACS Nano Vol. 4, No. 8 Page 4815-4823, etc.), the use of so-called spacer processes as cores (for example, JP-A-3-270227, JP-A-2013-164509, etc.).

The present invention also relates to a manufacturing method of an electronic device and an electronic device manufactured by the manufacturing method including the above-described pattern forming method of the present invention.

INDUSTRIAL APPLICABILITY The electronic device of the present invention is suitably mounted in electric and electronic devices (such as home appliances, OA and media-related devices, optical devices, and communication devices).

Example

Hereinafter, the present invention will be described in detail by way of examples, but the content of the present invention is not limited thereto.

&Lt; Synthesis of acid-decomposable resin &

Synthesis Example 1: Synthesis of Resin (1)

And 102.3 parts by mass of cyclohexanone were heated at 80 占 폚 under a nitrogen stream. 22.2 parts by mass of a monomer represented by the following structural formula M-1, 22.8 parts by mass of a monomer represented by the following structural formula M-2, 6.6 parts by mass of a monomer represented by the following structural formula M-3, 189.9 parts by mass of cyclohexanone, , And 2.40 parts by mass of dimethyl 2'-azobisisobutyrate (V-601, manufactured by Wako Pure Chemical Industries, Ltd.) was added dropwise over 5 hours. After completion of the dropwise addition, the mixture was further stirred at 80 DEG C for 2 hours. The reaction solution was cooled, reprecipitated with a large amount of hexane / ethyl acetate (mass ratio 9: 1), filtered, and the obtained solid was vacuum-dried to obtain 41.1 parts by mass of Resin (1).

(75)

The weight average molecular weight (Mw: in terms of polystyrene) of the resin (1) obtained from GPC (carrier: tetrahydrofuran (THF)) was Mw = 9500 and the degree of dispersion was Mw / Mn = 1.62. The composition ratio measured by ¹³ C-NMR was 40/50/10 in molar ratio.

(2) to (12) described below as an acid-decomposable resin were synthesized.

[Preparation of resist composition]

The components shown in Table 1 were dissolved in a solvent to prepare solutions each having a solid content concentration of 3.5% by mass. Each solution was filtered with a polyethylene filter having a pore size of 0.03 m to prepare a resist composition.

[Table 1]

The following abbreviations are used in the table.

&Lt; Acid decomposable resin &

[Formula 76]

Table 2 shows the composition ratios (molar ratios, corresponding to the order from the left), weight average molecular weights (Mw) and dispersion degrees (Mw / Mn) of the respective repeating units. These were obtained in the same manner as in the above-mentioned Resin (1).

[Table 2]

&Lt;

[Formula 77]

&Lt; Basic compound >

As the acid diffusion controlling agent, the following compounds were used.

(78)

&Lt; Hydrophobic resin &

As the hydrophobic resin, the following resins were used.

(79)

Table 3 shows the composition ratios (molar ratios, corresponding to the order from the left), weight average molecular weights (Mw), and degree of dispersion (Mw / Mn) of the respective repeating units. These were obtained in the same manner as in the above-mentioned Resin (1).

[Table 3]

<Surfactant>

W-1: Megafac F176 (manufactured by DIC Corporation) (fluorine-based)

W-2: Megapac R08 (manufactured by DIC Corporation) (fluorine and silicon)

W-3: PF6320 (manufactured by OMNOVA Solutions Inc.) (fluorine-based)

<Solvent>

A1: Propylene glycol monomethyl ether acetate (PGMEA)

A2: Cyclohexanone

A3:? -Butyrolactone

B1: Propylene glycol monomethyl ether (PGME)

[Preparation of protective film forming composition]

The components shown in Table 4 were dissolved in a solvent shown in the table and a solution having a solid content concentration of 2.7% by mass was prepared, and the solution was filtered with a polyethylene filter having a pore size of 0.03 m as in the case of the resist, . In the composition A-23, X23 and X1 were mixed as a resin (X) at a mixing ratio (by mass) of 7: 3.

[Table 4-1]

[Table 4-2]

The following abbreviations are used in the table.

&Lt; Compound (A) >

As the compound (A), the following compounds TQ-1 to TQ-21 were used. Compound TQ-22 is a control compound.

(80)

[Formula 81]

&Lt; Resin (X) >

The respective repeating units contained in the resins X1 to X27 are as follows. The composition ratio (molar ratio), weight average molecular weight (Mw) and dispersion degree (Mw / Mn) of each of the repeating units in Resins X1 to X27 were determined in the same manner as in Resin (1).

(82)

[Formation of hole pattern]

ARC29SR (manufactured by Brewer) for forming an organic antireflection film was applied on a silicon wafer and baked at 205 deg. C for 60 seconds to form an antireflection film having a film thickness of 86 nm, and an active ray-sensitive or radiation-sensitive resin composition And baked (PB) at 100 DEG C for 60 seconds to form a resist film having the film thickness shown in Table 5. [ Further, a composition for forming a protective film was applied, and baking was carried out at the temperature shown in Table 5 for 60 seconds to form a protective film having the film thickness shown in Table 5. [

The wafer thus obtained was subjected to etching using an ArF excimer laser immersion scanner (manufactured by ASML, XT1700i, NA1.20, C-Quad, outer Sigma 0.730, Inner Sigma 0.630, XY deflection) to form a square having a hole portion of 65 nm and a hole pitch of 100 nm Pattern exposure was performed through a halftone mask of the array. Ultrapure water was used as the immersion liquid. Thereafter, the wafer was heated (PEB: Post Exposure Bake) at 105 DEG C for 60 seconds. Then, it was puddled with a butyl acetate developer for 30 seconds, developed, and rinsed with a rinse solution of methyl isobutyl carbinol (MIBC) for 30 seconds (in Example 13, rinsing step Was not implemented). Subsequently, the wafer was rotated at a rotational speed of 2000 rpm for 30 seconds to obtain a hole pattern having a hole diameter of 50 nm.

[Formation of line and space pattern]

ARC29SR (manufactured by Brewer) for forming an organic antireflection film was applied on a silicon wafer and baked at 205 deg. C for 60 seconds to form an antireflection film having a film thickness of 86 nm, and an active ray-sensitive or radiation-sensitive resin composition And baked (PB) at 100 DEG C for 60 seconds to form a resist film having the film thickness shown in Table 5. [ Further, a composition for forming a protective film was applied, and baking was carried out at the temperature shown in Table 5 for 60 seconds to form a protective film having the film thickness shown in Table 5. [

The resultant wafer was subjected to a halftone mask having a space portion of 55 nm and a space between spaces of 110 nm using an ArF excimer laser immersion scanner (manufactured by ASML, XT1700i, NA1.20, Dipole, outer Sigma 0.800, Inner Sigma 0.564, Y deflection) To perform pattern exposure. Ultrapure water was used as the immersion liquid. Thereafter, the wafer was heated (PEB: Post Exposure Bake) at 105 DEG C for 60 seconds. Then, it was puddled with a butyl acetate developer for 30 seconds, developed, and rinsed with an MIBC rinse solution for 30 seconds (however, the rinse process was not carried out for Example 13). Then, the wafer was rotated at a rotational speed of 2000 rpm for 30 seconds to obtain a line and space pattern with a line width of 50 nm.

[evaluation]

&Lt; Depth of Focus (DOF) >

In exposure and development conditions of the above-mentioned "formation of a hole pattern ", exposure and development were carried out by changing the condition of the exposure focus in the unit of 20 nm in the focus direction at the exposure amount for forming a hole pattern with a hole diameter of 50 nm, The critical diameter (CD) of the pattern was measured using a line width measuring scanning electron microscope SEM (Hitachi Seisakusho S-9380), and the peak value or the maximum value of the curve obtained by plotting each CD The corresponding focus was set as the best focus. When the focus was changed around the best focus, the variation range of the focus allowing the hole diameter of 50 nm +/- 10%, that is, the focus margin (DOF) (nm) was calculated. The evaluation results are shown in Table 5.

&Lt; Evaluation of line edge roughness (LER) >

In the exposure amount for forming a line pattern having a line width of 50 nm in the exposure and development conditions of the "formation of a line and space pattern", the line edge roughness was measured using a line scanning scanning electron microscope (SEM) The pattern was observed, and the distance from the reference line on which the edge should be located was measured at 50 points by the measurement SEM with respect to the range of 5 mu m in the longitudinal direction of the line pattern, and the standard deviation was calculated to calculate 3 sigma (nm). The smaller the value, the better the performance. The evaluation results are shown in Table 5.

&Lt; Exposure Latitude >

In the exposure and development conditions of the above-mentioned [formation of a line and space pattern], exposure and development are carried out by changing the exposure amount at the exposure amount for forming a space pattern having a pitch of 200 nm and a space width of 50 nm, and the space line width Dimension: CD) was measured using a line width measuring scanning electron microscope SEM (Hitachi SEISAKUSHO S-9380), and the exposure amount corresponding to the extreme value or the maximum value of the curve obtained by plotting each CD was plotted as the optimum exposure amount . When the exposure amount was changed around the optimum exposure amount, the variation width of the exposure amount allowing a line width of 50 nm +/- 10% was determined, and this value was divided by the optimum exposure amount to indicate the percentage. The larger the value, the smaller the change in performance due to the change in exposure amount, and the better the exposure latitude is.

[Table 5]

From the results shown in Table 5, it was found that the pattern obtained by the pattern forming method of the present invention had excellent focus margin (DOF) and exposure margin (EL) and suppressed line edge roughness (LER) .

Claims (11)

(a) a step of applying a sensitizing actinic ray or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film,
(b) a step of applying a composition for forming a protective film onto the above-mentioned actinic ray-sensitive or radiation-sensitive film to form a protective film,
(c) exposing the sensitizing actinic radiation or radiation-sensitive film coated with the protective film, and
(d) developing the exposed actinic ray sensitive or radiation-sensitive film with a developer containing an organic solvent,
(A) comprising at least one group or a bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond, and a resin (X) &Lt; / RTI &gt; Provided that the compound (A) is neither a chain amide, a cyclic amide, an aromatic amine, a chain aliphatic amine or a cyclic aliphatic amine. The method according to claim 1,
Wherein the molecular weight of the compound (A) is 3000 or less. The method according to claim 1 or 2,
Wherein the compound (A) is a compound containing at least 8 carbon atoms. The method according to any one of claims 1 to 3,
Wherein the content of the compound (A) relative to the total solid content in the protective film is 0.1 to 30 mass%. The method according to any one of claims 1 to 4,
Wherein the protective film has a thickness of 10 to 300 nm. The method according to any one of claims 1 to 5,
Wherein the compound (A) is a compound having at least one ether bond. According to claim 6,
Wherein the compound (A) is a compound having a structure represented by the following general formula (1).
[Chemical Formula 1]

Wherein,
R ₁₁ represents an alkylene group which may have a substituent,
n represents an integer of 2 or more,
* Indicates a combined hand. The method according to any one of claims 1 to 7,
The resin (X) has a content of fluorine atoms of 20 mass% or less. The method according to any one of claims 1 to 8,
A step of heating the substrate coated with the actinic ray-sensitive or radiation-sensitive film and the protective film after the step (b) of forming the protective film and before the step (c) Way. (A) having a structure represented by the following general formula (1), and a protective film containing a resin (X), which is used for forming a protective film for covering the active ray- Composition. Provided that the compound (A) is neither a chain amide, a cyclic amide, an aromatic amine, a chain aliphatic amine or a cyclic aliphatic amine.
(2)

Wherein,
R ₁₁ represents an alkylene group which may have a substituent,
n represents an integer of 2 or more,
* Indicates a combined hand. A method of manufacturing an electronic device comprising the pattern forming method according to any one of claims 1 to 9.