KR20170039062A - Light emitting device package - Google Patents

Abstract

A light emitting device package according to an exemplary embodiment of the present invention includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and includes a first surface and a second surface facing the first surface, A separation insulating layer extending from the first surface to the second surface to divide the light emitting structure into a plurality of light emitting regions, a first insulating layer connected to the first conductive semiconductor layer in each of the plurality of light emitting regions, A second electrode pad disposed on the first surface of the light emitting structure and connected in common to the second conductive semiconductor layer included in each of the plurality of light emitting regions, And a plurality of wavelength conversion layers disposed on the second surface in each of the plurality of light emitting regions.

Description

[0001] LIGHT EMITTING DEVICE PACKAGE [0002]

Technical aspects of the present invention relate to a light emitting device package.

Semiconductor light emitting devices are known as next generation light sources having advantages such as long lifetime, low power consumption, fast response speed, and environmental friendliness, and they are attracting attention as an important light source in various products such as a backlight of a lighting device and a display device. In particular, a group III nitride-based light-emitting device such as GaN, AlGaN, InGaN, InAlGaN or the like plays an important role as a semiconductor light emitting device that outputs blue light or ultraviolet light.

Accordingly, as the use of LEDs in various aspects is expanded, a miniaturized package is required in order to secure freedom of design for each application.

SUMMARY OF THE INVENTION One of the technical problems to be solved by the technical idea of the present invention is to provide a miniaturized light emitting device package capable of implementing various colors.

SUMMARY OF THE INVENTION One of the technical problems to be solved by the technical idea of the present invention is to provide a miniaturized light emitting device package having an extended bonding pad.

A light emitting device package according to an embodiment of the present invention includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and includes a first surface and a second surface facing the first surface A first insulation layer formed on the first surface of the first conductive semiconductor layer and extending from the first surface to the second surface to separate the light emitting structure into a plurality of light emitting regions, A second electrode pad disposed on the first surface of the light emitting structure and connected to the second conductive semiconductor layer included in each of the plurality of light emitting regions, And a plurality of wavelength conversion layers disposed on the second surface in each of the plurality of light emitting regions.

A light emitting device package according to an embodiment of the present invention includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a separation insulating layer dividing the light emitting structure into a plurality of light emitting regions, A plurality of first connection electrodes disposed on the first surface of the light emitting structure and connected to the first conductive semiconductor layers included in each of the plurality of light emitting regions, A second connection electrode electrically connecting the second conductivity type semiconductor layers included in each of the plurality of light emitting regions to each other, a plurality of first electrode pads connected to each of the plurality of first connection electrodes, And a second electrode pad connected to the second connection electrode.

A light emitting device package according to an embodiment of the present invention includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and includes a first surface and a second surface facing the first surface A first insulating layer formed on the first surface and extending from the first surface to the second surface to separate the light emitting structure into a plurality of light emitting regions, A second connection electrode electrically connecting the second conductivity type semiconductor layers included in each of the plurality of light emission regions to each other, and a plurality of first connection electrodes connected to the first conductivity type semiconductor layers, A plurality of first electrode pads connected to each of the plurality of first connection electrodes, a second electrode pad connected to the second connection electrodes, conversion A plurality of filter layers disposed on the plurality of wavelength conversion layers, and barrier ribs disposed between the plurality of wavelength conversion layers and on the isolation insulating layer.

According to an embodiment of the present invention, it is possible to provide a miniaturized light emitting device package capable of realizing various colors.

According to an embodiment of the present invention, a miniaturized light emitting device package having an extended bonding pad can be provided.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1A and 1B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.
FIGS. 2A and 2B are cross-sectional views taken along a line I-I 'and a line II-II' of the light emitting device package shown in FIG. 1A.
3A to 9B are cross-sectional views of major processes for explaining a method of manufacturing a light emitting device package according to an embodiment of the present invention.
10A and 10B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.
11A and 11B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.
12A and 12B are cross-sectional views taken along line III-III 'and line IV-IV' of the light emitting device package shown in FIG. 11A.
13A and 13B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.
14A and 14B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.
15A and 15B are cross-sectional views schematically showing a light emitting device package according to an embodiment of the present invention.
16A and 16B are cross-sectional views schematically showing a light emitting device package according to an embodiment of the present invention.
17A and 17B are cross-sectional views schematically showing a light emitting device package according to an embodiment of the present invention.
18A and 18B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.
19A and 19B are cross-sectional views taken along line V-V 'and line VI-VI' of the light emitting device package shown in FIG. 18A.
20A and 20B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.
FIGS. 21A and 21B are cross-sectional views taken along lines VII-VII 'and VIII-VIII' of the light emitting device package shown in FIG. 20A.
FIGS. 22A to 25 illustrate processes of a method of manufacturing a light emitting device package according to an embodiment of the present invention.
26A and 26B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.
27A and 27B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.
28A and 28B are cross-sectional views taken along the line X-X 'and line XI-XI' of the light emitting device package shown in FIG. 27A.
29 is a schematic view of a display panel including a light emitting device package according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1A and 1B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention. FIGS. 2A and 2B are cross-sectional views taken along a line I-I 'and a line II-II' of the light emitting device package shown in FIG. 1A.

1A and 1B, a light emitting device package 10 according to an embodiment of the present invention includes three light emitting regions C1, C2, and C3, first and second insulating layers 121a and 121b, The first insulating layer 126, the first contact electrodes 123, the first connection electrodes 127, the first electrode pads 131a, 131b and 131c, the second contact electrodes 124, And may include a connection electrode 128, a second electrode pad 132, a molding portion 134, light control portions 150a, 150b, and 150c, The light adjusting sections 150a, 150b and 150c may include wavelength conversion layers 151a, 151b and 151c and filter layers 153a, 153b and 153c.

Specifically, the light emitting device package 10 may include a light emitting structure LS including a first conductive semiconductor layer 113, an active layer 115, and a second conductive semiconductor layer 117. The light emitting structure LS may be divided into three light emitting regions C1, C2, and C3 by a separation insulating layer 126. [ The light emitting structure LS has a first surface provided by the second conductive type semiconductor layer 117 and a second surface provided by the first conductive type semiconductor layer 113 and facing the first surface, The isolation insulating layer 126 may extend from the first surface to the second surface to divide the light emitting structure LS into three light emitting regions C1, C2, and C3. One side of the isolation insulating layer 126 may be co-planar with the second side. The active layer 115 of the first to third light emitting regions C1, C2, and C3 may be configured to emit the same light. For example, the active layer 115 may emit blue light (e.g., 440 nm to 460 nm) or ultraviolet light (e.g., 380 nm to 440 nm).

The light emitting device package 10 is provided for each of the light emitting regions C1, C2 and C3 and is connected to the first conductivity type semiconductor layer 113 through the second conductivity type semiconductor layer 117 and the active layer 115, The first contact electrodes 123 and the first connection electrodes 127 disposed between the first conductive type semiconductor layer 113 and the first connection electrodes 127. The first connection electrodes 127, The first electrode pads 131a, 131b and 131c are arranged in the same number as the number of the light emitting regions, and the second electrode pads 131a, 131b and 131c, Type semiconductor layers 117 and second contact electrodes 124 disposed between the second conductivity type semiconductor layers 117 and the second connection electrodes 128. The second contact electrodes 124 are connected to the second conductivity type semiconductor layers 117, And a second electrode pad 132 disposed on the same side as the first electrode pads 131a, 131b and 131c and provided on the second connection electrode 128. The first connection electrode 127 connected to the second light emitting region C2 arranged in the middle has a portion extending to cover a part of the neighboring third light emitting region C3, A pad 131b may be provided. The second connection electrode 128 may be integrally disposed over the first to third light emitting regions C1, C2, and C3. The first connection electrode 127 is connected to the first conductivity type semiconductor layer 113 through a first through hole H1 formed in the insulating layers 121a, 121b and 126, And may be connected to the second conductive type semiconductor layer 117 through a second through hole H2 formed in the insulating layers 121a, 121b, and 126. The first electrode pads 131a, 131b and 131c and the second electrode pads 132 may be disposed on the first surface of the light emitting structure LS. The first electrode pads 131a, 131b and 131c and the second electrode pads 132 may be disposed adjacent to the vertex of the first surface of the light emitting structure LS. The first electrode pad 131a and the second electrode pad 132 are disposed under the first light emitting region C1 and the first electrode pads 131b and 131b are disposed under the third light emitting region C3 . In one embodiment, the first conductive semiconductor layer 113 is an n-type semiconductor layer, the second conductive type semiconductor layer 117 is a p-type semiconductor layer, and the second electrode pad 132 is a p- And may be a common anode connected to the p-type semiconductor layers of the three light emitting regions C1, C2, and C3. Alternatively, in one embodiment, the first conductive semiconductor layer 113 is a p-type semiconductor layer, the second conductive semiconductor layer 117 is an n-type semiconductor layer, and the second electrode pad 132 is a p- And may be a common cathode connected to the n-type semiconductor layers of the third light emitting regions C1, C2, and C3.

The light emitting device package 10 includes first and second insulating layers 121a and 121b for electrically insulating the first connection electrodes 127 from the second conductive type semiconductor layers 117 and the active layers 115, 131b and 131c and the second electrode pads 132 surrounding the light emitting structure LS, the first electrode pads 131a, 131b and 131c and the second electrode pads 132. The first electrode pads 131a, A molding part 134 which exposes the lower surface of the electrode pad 132 and a molding part 134 which is provided on the first to third light emitting areas C1, C2 and C3 to form the first to third light emitting areas C1, C2 First to third wavelength conversion layers 151a, 151b and 151c for converting light emitted from the first to third wavelength conversion layers 151a, 151b and 151c, First to third filter layers 153a, 153b and 153c selectively blocking light emitted from at least one of the first, second, third, and fourth light emitting regions C1, C2, and C3, (151a, 151b And 151c and a partition wall 145 disposed between the first to third filter layers 153a, 153b, and 153c. The barrier ribs 145 may be disposed on the isolation insulating layer 126 to be connected to the isolation insulating layer 126. The barrier ribs 145 may include a light blocking material so that light transmitted through the first through third wavelength conversion layers 151a, 151b, and 151c does not interfere with each other. For example, the barrier ribs 145 may include silicon (Si), black matrix resin, or the like.

The first wavelength tuning layer 151a and the first filter layer 153a constitute the first light modulating section 150a and the second wavelength converting layer 151b and the second filter layer 153b constitute the second light modulating section 150b And the third wavelength conversion layer 151c and the first filter layer 153c may form the third light modulating part 150c.

The first to third wavelength conversion layers 151a, 151b, and 151c may include a phosphor or a wavelength conversion material such as a quantum dot (QD). In one embodiment, the first to third light emitting regions C1, C2, and C3 emit UV light, and the first wavelength conversion layer 151a and the second wavelength conversion layer 151b emit red light, And the first to third filter layers 153a, 153b, and 153c are formed on the first to third light emitting regions C1, C2, and C3, respectively, when the third wavelength conversion layer 151c includes a blue phosphor. C3, and transmit the red light, the green light, and the blue light emitted from the first through third wavelength conversion layers 151a, 151b, and 151c.

Alternatively, the first to third light emitting regions C1, C2, and C3 may emit blue light, and the first wavelength conversion layer 151a may emit red light and the second wavelength conversion layer 151b And the third wavelength conversion layer 151c includes a green phosphor having a concentration lower than that of the second wavelength conversion layer 151b, the first and second filter layers 153a and 153b may be formed of a green phosphor, The blue light emitted from the first and second light emitting regions C1 and C2 may be selectively blocked and the third filter layer 153c may transmit the blue light emitted from the third light emitting region C3.

In addition, the filter layers 153a, 153b, and 153c may selectively block a specific wavelength region of light emitted from the plurality of wavelength conversion layers 151a, 151b, and 151c. Thus, the half width FWHM of the light emitted from the wavelength conversion layers 151a, 151b, and 151c can be reduced in the filter layers 153a, 153b, and 153c.

The wavelength conversion layers 151a, 151b, and 151c are not limited to the above-described embodiments and may include various combinations of phosphors.

3A to 9B are cross-sectional views of major processes for explaining a method of manufacturing the light emitting device package 10 of FIGS. 1A and 2B. Specifically, the method of manufacturing the light emitting device package is a method of manufacturing a wafer level chip-scale package. Hereinafter, in a main process drawing, a section of some light emitting device packages is enlarged and shown for easier understanding. 3A, 4A, 5A, 6A, 7A, 8A and 9A are sectional views taken along the line II 'in FIG. 1A and FIGS. 3B, 4B, 5B, 6B, 7b, 8b and 9b are shown on the basis of a cross section taken along line II-II 'in FIG. 1a.

3A and 3B, a method of manufacturing the light emitting device package 10 includes a light emitting structure including a first conductive semiconductor layer 113, an active layer 115, and a second conductive semiconductor layer 117 LS may be formed on the substrate 101.

The substrate 101 may be an insulating, conductive, or semiconductor substrate, if desired. For example, the substrate 101 may be sapphire, SiC, Si, MgAl ₂ O ₄ , MgO, LiAlO ₂ , LiGaO ₂ , GaN.

The light emitting structure LS may include epitaxial layers of a Group III nitride-based semiconductor layer formed on the substrate 101 to form a plurality of light emitting regions. The first conductivity type semiconductor layer 113 is a nitride semiconductor semiconductor that satisfies n-type In _x Al _y Ga _{1 -x- y} N (0? _X <1, 0? _Y <1, 0? _X + y < And the n-type impurity may be Si, Ge, Se, Te, or the like. The active layer 115 may be a multiple quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer are alternately stacked. For example, the quantum well layer and the quantum barrier layer may have In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) . In a particular example, the quantum well layer comprises In _x Ga _{1 - x} N (0 < x < = 1), and the quantum barrier layer may be GaN or AlGaN. The second conductivity type semiconductor layer 117 is a nitride semiconductor layer that satisfies a relation of p? In _x Al _y Ga _{1 -x- y} N (0? _X <1, 0? _Y <1, 0? _X + y < And the p-type impurity may be Mg, Zn, Be, or the like. A buffer layer may be formed between the substrate 101 and the first conductivity type semiconductor layer 113. The buffer layer may be In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1). For example, the buffer layer may be AlN, AlGaN, or InGaN. If necessary, the buffer layer may be formed by combining a plurality of layers having different compositions, or may be formed as a single layer whose composition is gradually changed.

Next, an opening is formed so as to expose a part of the first conductivity type semiconductor layer 113 by removing a part of the second conductivity type semiconductor layer 117 and the active layer 115, and then the first insulation layer 121a, Can be deposited. One or a plurality of the openings may be formed for each light emitting region.

Referring to FIGS. 4A and 4B, first and second contact electrodes 123 and 124 made of a conductive material may be formed at a portion where a part of the first insulating layer 121a is removed.

A part of the first insulating layer 121a formed on the second conductive type semiconductor layer 117 is removed and a second contact electrode 124 is formed to be electrically connected to the second conductive type semiconductor layer 117 . Next, the second insulating layer 121b covering the second contact electrode 124 and the first insulating layer 121a may be formed. The first and second insulating layers 121a and 121b are partially removed and the first conductive semiconductor layer 113 in the opening is electrically connected to the first conductive semiconductor layer 113. [ The first contact electrode 123 may be formed.

The first and second contact electrodes 123 and 124 may be formed of at least one of Ag Al, Ni, Cr, Cu, Au, Pd, Pt, Sn, W, Rh, Ir, Ru, Mg, Zn, May be a reflective electrode including one.

5A and 5B, an isolation process for separating the light emitting structure LS into a plurality of light emitting regions, and a process for forming a first connection electrode and a second connection electrode may be performed.

5A, the isolation region I includes a second insulating layer 121b, a second contact electrode 124, and the light emitting structure LS (LS) between the first contact electrode 123 and the second contact electrode 124, As shown in Fig. Through the above process, the light emitting structure LS is separated into a plurality of light emitting regions and supported by the substrate 101. Referring to FIG. 5B, the isolation region I may be formed for each of the three emission regions C1, C2, and C3. The light emitting structure can be separated into individual light emitting chip units by the separation region (I). A sub-isolation region Ia may be formed between the three light emitting regions C1, C2, and C3. The isolation process may include a process of forming the isolation region I using a blade, but the present invention is not limited thereto. The sub-separation region Ia may be formed by a separate process, but may be formed by the same process as the separation region I. The sub-separation region Ia may be formed to have a narrower width than the isolation region I. In one embodiment, the sub-separation region Ia may be formed to have the same width as the isolation region I. The light emitting regions C1, C2, and C3 obtained by the isolation process may have a trapezoidal shape whose upper portion is narrower than the lower portion. Thus, the light emitting regions C1, C2, Lt; RTI ID = 0.0 &gt; a &lt; / RTI &gt;

Next, a separation insulating layer 126 may be formed on the side surfaces of the light emitting regions C1, C2, and C3 and on the second insulating layer 121b. In FIG. 5B, the sub-isolation region Ia is shown as being embedded in the isolation insulating layer 126, but the present invention is not limited thereto.

The separating insulating layer 126 may be any material that is electrically insulating, and a material having a low light absorptivity may be used. The isolation insulating layer 126 may use, for example, silicon oxide, silicon oxynitride, or silicon nitride. Alternatively, in one embodiment, the isolation insulating layer 126 may comprise a reflective material or reflective material. The isolation insulating layer 126 may be a multilayered reflection structure in which a plurality of insulating films having different refractive indices are alternately stacked. The multi-layer reflection structure may be a DBR (Distributed Bragg Reflector) in which a first insulating layer having a first refractive index and a second insulating layer having a second refractive index are alternately stacked. The multi-layered reflection structure may be formed by repeating a plurality of insulating films having different refractive indices from 2 to 100 times. The plurality of insulating films of the multilayer reflective structure may be formed of an oxide or a nitride such as SiO ₂ , SiN, SiO _x N _y , TiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , ZrO ₂ , TiN, AlN, TiAlN, TiSiN, Lt; / RTI &gt;

The first and second through holes H1 and H2 are formed to expose a part of the first and second contact electrodes 123 and 124 by removing a part of the isolation insulating layer 126 and the second insulating layer 121b. Can be formed. A first connection electrode 127 connected to the exposed first contact electrode 123 and a second connection electrode 128 connected to the exposed second contact electrode 124 may be formed. The first connection electrode 127 may be formed for each light emitting region, and the second connection electrode 128 may be integrally formed over the three light emitting regions.

6A and 6B, a first electrode pad 131a connected to the first connection electrode 127 and a second electrode pad 132 connected to the second connection electrode 128 may be formed. The first electrode pad 131a and the second electrode pad 132 may be formed by a plating process. The first electrode pad 131a and the second electrode pad 132 may be formed of copper (Cu), but the present invention is not limited thereto. The first electrode pad 131a and the second electrode pad 132 may be formed of a conductive material other than copper.

A molding part 134 for filling the first electrode pad 131a and the second electrode pad 132 and the separation area I (see FIGS. 5A and 5B) may be formed. The molding part 134 may be formed by a process of applying a molding material so as to cover the tops of the first electrode pad 131a and the second electrode pad 132 and a process of applying a molding material to the first electrode pad 131a and the second electrode pad 132 using a planarization process such as grinding, And exposing the end portions of the second electrode pads 132. The molding part 134 must have a high Young's modulus because it must be capable of supporting the light emitting structure LS and a material having a high thermal conductivity in order to emit heat generated from the light emitting structure LS Can be used. The molding portion 134 may be, for example, an epoxy resin or a silicone resin. In addition, the molding portion 134 may include light reflective particles for reflecting light. As the light-reflective particles, titanium dioxide (TiO ₂ ) and / or aluminum oxide (Al ₂ O ₃ ) may be used, but the present invention is not limited thereto.

Referring to FIGS. 7A and 7B, the substrate 101 may be removed to expose the first conductive semiconductor layer 113 and the isolation insulating layer 126.

The supporting substrate 140 may be attached on the molding part 134. [ A bonding layer 138, such as an ultraviolet curable material, may be used for bonding the support substrate 140. Thereafter, when the substrate 101 is a transparent substrate such as sapphire, the substrate 101 may be separated from the light emitting structure LS through a laser lift-off (LLO). The laser used in the laser lift-off process may be at least one of a 193 nm excimer laser, a 248 nm excimer laser, a 308 nm excimer laser, an Nd: YAG laser, a He-Ne laser, and an Ar ion laser. Further, when the substrate 101 is an opaque substrate such as Si, the substrate 101 may be removed by grinding, polishing, dry etching, or a combination thereof.

If necessary, after the substrate 101 is removed, irregularities may be formed on the upper surface of the first conductive type semiconductor layer 113 to increase the light emission efficiency. The irregularities can be formed by, for example, a wet etching process using a solution containing KOH or NaOH, or a dry etching process using an etching gas containing BCl ₃ gas.

8A and 8B, a barrier rib 145 is formed on the isolation insulating layer 126 between the light emitting regions C1, C2, and C3, and the first conductive semiconductor layers 113, The wavelength conversion layers 151a, 151b, and 151c and the filter layers 153a, 153b, and 153c may be sequentially formed on the substrate. That is, the light modulating units 150a, 150b, and 150c may be formed.

The wavelength conversion layers 151a, 151b, and 151c may include various wavelength conversion materials such as phosphors and quantum dots. For example, the wavelength conversion layers 151a, 151b, and 151c may include different phosphors to emit light of different colors.

Referring to FIGS. 9A and 9B, a process of cutting each individual package can be finally performed. The cutting process can be performed, for example, in such a manner that the support substrate 140 is removed and then the adhesive tape is attached and separated into individual packages using the blades.

7A and 7B, when the substrate 101 is a Si substrate, the process of forming the barrier ribs 145 by patterning the substrate 101 Can be performed.

The chip scale package obtained through the above process can achieve substantially the same package size as the semiconductor light emitting device (i.e., the LED chip). Therefore, when used in a lighting device or the like, a high light quantity per unit area can be obtained, and when used in a display panel, pixel size and pixel pitch can be reduced. In addition, since all the processes are performed at the wafer level, it is suitable for mass production, and an optical structure such as a wavelength conversion layer or a filter layer including a phosphor can be integrally manufactured together with an LED chip.

10A and 10B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention. The light emitting device package 10A shown in Figs. 10A and 10B has the arrangement structure of the light emitting device package 10 and the plurality of light emitting regions C1 ', C2', C3 'described with reference to Figs. 1A and 2B And therefore will be briefly described. The description of the light emitting device package 10 described above with reference to FIGS. 1A and 2B can be equally applied to the light emitting device package 10A of the present embodiment unless otherwise noted.

10A and 10B, a light emitting device package 10A according to an embodiment of the present invention includes a light emitting structure LS divided into three light emitting regions C1 ', C2', and C3 ' can do. The first and second emission regions C1 'and C3' are arranged in one direction and the second and third emission regions C2 'and C3' are arranged in a direction substantially perpendicular to the long side of the first emission region C1 ' .

The light emitting device package 10A includes first connection electrodes 227, first electrode pads 231a, 231b and 231c, a second connection electrode 228, a second electrode pad 232, a molding part 234 , Light modulators 250a, 250b, 250c, and barrier ribs 245, and the like. The light modulators 250a, 250b, and 250c may include a wavelength conversion layer and a filter layer. The second connection electrode 128 may be integrally disposed over the first to third light emitting regions C1, C2, and C3. The first and second connection electrodes 227 and 228 may be connected to the first and second conductive type semiconductor layers through the first and second through holes H1 and H2, respectively.

A first electrode pad 231c and a second electrode pad 232 are disposed under the first light emitting region C1 'and a first electrode pad 231a is disposed under the second light emitting region C2' And a first electrode pad 231b may be disposed below the third light emitting region C3 '.

11A and 11B are a plan view and a rear view schematically showing a light emitting device package 10B according to an embodiment of the present invention. 12A and 12B are cross-sectional views taken along line C-C 'and line D-D' of the light emitting device package 10B shown in FIG. 11A. The light emitting device package 10B shown in FIGS. 11A to 12B is a structure in which the number of light emitting regions is different from that of the light emitting device package 10 described with reference to FIGS. 1A and 2B. The description of the light emitting device package 10 described above with reference to FIGS. 1A and 2B can be equally applied to the light emitting device package 10B of the present embodiment unless otherwise noted.

11A to 12B, the light emitting device package 10B according to an embodiment of the present invention includes four light emitting regions C1, C2, C3, and C4, first and second insulating layers 321a, The first contact electrodes 321 and the second contact electrodes 321a and 321b and the isolation insulating layer 326 and the first contact electrodes 323, the first connection electrodes 327, the four first electrode pads 331a, 331b, 331c, and 331d, The first electrode pad 324, the second connection electrode 328, the second electrode pad 332, the molding portion 334, the light modulating portions 350a, 350b, 350c and 350d and the barrier ribs 345. The light modulation units 350a, 350b, 350c, and 350d may include wavelength conversion layers 351a, 351b, 351c, and 351d and filter layers 353a, 353b, 353c, and 353d.

The light emitting device package 10B may include a light emitting structure LS including a first conductivity type semiconductor layer 313, an active layer 315, and a second conductivity type semiconductor layer 317. In addition, The light emitting structure LS may be divided into first to fourth light emitting regions C1, C2, C3 and C4 by a separation insulating layer 326. [

The light emitting device package 10B is provided for each of the light emitting regions C1, C2, C3 and C4 and the first conductive semiconductor layer 313 is formed through the second conductive semiconductor layer 317 and the active layer 315, First contact electrodes 323 disposed between the first conductive type semiconductor layer 313 and the first connection electrodes 327, first connection electrodes 323 connected to the first connection electrodes 327, 331b, 331c, and 331d disposed on the first electrode pad 327 and having the same number as the number of the light emitting regions, the first to fourth light emitting regions C1, C2, C3, A second connection electrode 328 connected to the second conductivity type semiconductor layers 317 of the first conductivity type semiconductor layer 314 and a second connection type semiconductor layer 317 of the second conductivity type semiconductor layer 314, Contact electrodes 324 and second electrode pads 332 disposed on the same side as the first electrode pads 331a, 331b, 331c and 331d and provided on the second connection electrode 328 . The first connection electrode 327 connected to the third emission region C3 disposed on the inner side has a portion extending to cover a part of the neighboring fourth emission region C4, And an electrode pad 331c may be provided. The second connection electrode 328 may be disposed integrally over the first to fourth light emitting regions C1, C2, C3, and C4. The first connection electrode 327 is connected to the first conductivity type semiconductor layer 313 through the first through hole H1 formed in the insulating layers 321a, 321b and 326, And may be connected to the second conductive type semiconductor layer 317 through a second through hole H2 formed in the insulating layers 321a, 321b, and 326. [ The first electrode pads 331a, 331c, and 331d and the second electrode pad 132 may be disposed adjacent to the vertex of the light emitting structure LS. The first electrode pad 331b may be disposed adjacent to an edge of the light emitting structure LS. The first electrode pad 331a and the second electrode pad 332 are disposed under the first light emitting region C1 and the first electrode pad 331b is disposed under the second light emitting region C2, First electrode pads 331c and 331d may be disposed under the fourth light emitting region C4.

The light emitting device package is provided on the first to fourth light emitting regions C1, C2, C3 and C4 to emit light emitted from the first to fourth light emitting regions C1, C2, C3 and C4 The wavelength conversion layers 351a, 351b, 351c and 351d are provided on the wavelength conversion layers 351a, 351b and 351c and are emitted from at least one of the light emitting regions C1, C2, C3 and C4. 353b, 353c, and 353d disposed between the wavelength conversion layers 351a, 351b, 351c, and 353d and the filter layers 353a, 353b, 353c, and 353d, (345). The first wavelength conversion layer 351a and the first filter layer 353a form a first light modulation section 350a and the second wavelength conversion layer 351b and the second filter layer 353b form a second light modulation section 350b The third wavelength conversion layer 351c and the first filter layer 353c constitute the third light modulation section 350c and the fourth wavelength conversion layer 351d and the first filter layer 353d constitute the third light modulation section 350d ).

The first to fourth light emitting regions C1, C2, C3 and C4 emit UV light and the first wavelength converting layer 351a and the second wavelength converting layer 351b emit red phosphors and green phosphors, respectively The third wavelength conversion layer 351c is a blue phosphor, and the fourth wavelength conversion layer 351d is a white phosphor. In this case, the first to fourth filter layers 353a, 353b, 353c, and 353d selectively block the UV light emitted from the first to fourth light emitting regions C1, C2, C3, and C4, Green light, blue light, and white light emitted from the first to fourth wavelength conversion layers 351a, 351b, 351c, and 353d. In addition, the filter layers 353a, 353b, 353c, and 353d can selectively block a certain wavelength region of light emitted from the wavelength conversion layers 351a, 351b, 351c, and 351d, 351a, 351b, 351c, and 351d may be reduced.

13A and 13B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention. The light emitting device package 10C shown in FIGS. 13A and 13B includes the light emitting device package 10B and the plurality of light emitting regions C1 ', C2', C3 ', and C4' described with reference to FIGS. 11A to 12B. And therefore will be briefly described. The description of the light emitting device package 10B described above with reference to Figs. 11A to 12B can be equally applied to the light emitting device package 10C of this embodiment, as long as it is not contradictory.

13A and 13B, a light emitting device package 10C according to an embodiment of the present invention includes a light emitting structure divided into four light emitting regions C1 ', C2', C3 ', and C4' can do. Four light emitting regions C1 ', C2', C3 ', and C4' may be arranged in two rows and two columns.

The light emitting device package 10C includes first connection electrodes 427 disposed on the respective light emitting regions C1 ', C2', C3 ', and C4', first and second connection electrodes 427 and 427 disposed on the first connection electrodes 427, The second connection electrode 428 disposed over the four light emitting regions C1 ', C2', C3 ', and C4', the second connection electrode 428, the first connection pads 431a, 431b, 431c, and 431d, A molding portion 434, light modulating portions 450a, 450b, 450c, and 450d, and a barrier rib 445, which are disposed on the first electrode pad 432, The light modulating units 450a, 450b, 450c and 450d may include a wavelength conversion layer and a filter layer and may correspond to the light modulating units 350a, 350b, 350c and 350d of the light emitting device package 10B.

The first connection electrode 427 is connected to the first conductive semiconductor layer of the light emitting regions C1 ', C2', C3 ', C4' through the first through hole H1, and the second connection electrode 428 may be respectively connected to the second conductivity type semiconductor layers of the light emitting regions C1 ', C2', C3 ', C4' through the second through holes H2. The second electrode pad 432 may be disposed adjacent to the center of the light emitting structure and four first electrode pads 431a, 431b, 431c, and 431d may be disposed adjacent to the vertex of the light emitting structure. A first electrode pad 431a is disposed below the first light emitting region C1 ', a first electrode pad 431b is disposed below the second light emitting region C2', a third light emitting region C3 The first electrode pad 431c may be disposed under the fourth emission region C4 'and the first electrode pad 431d may be disposed under the fourth emission region C4'. The second electrode pad 432 may be disposed at the same time as the vertices of the first to fourth light emitting regions C1 ', C2', C3 ', and C4'.

14A and 14B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention. The light emitting device package 10D shown in FIGS. 14A and 14B has a structure in which the number of light emitting regions is different from that of the light emitting device package 10 described with reference to FIGS. 1A and 2B. The description of the light emitting device package 10 described above with reference to FIGS. 1A and 2B may be applied to the light emitting device package 10D of the present embodiment, as long as it is not contradictory.

14A and 14B, the light emitting device package 10D according to an embodiment of the present invention may include a light emitting structure LS divided into two light emitting regions C1 and C2.

The light emitting device package 10D includes first connection electrodes 527 disposed in the respective light emitting regions, first electrode pads 531a and 531b disposed on the first connection electrodes 527, The second connection electrode 528 disposed over the regions C1 and C2, the second electrode pad 532 disposed on the second connection electrode 528, the molding portion 534, the light control portions 550a, 550b, and a partition 545, and the like.

Each of the first and second light controllers 550a and 550b may include first and second wavelength conversion layers including different phosphors and quantum dots.

The second electrode pad 532 may be disposed longer than the first electrode pads 531a and 531b. The second electrode pad 532 may be disposed integrally over the two light emitting regions C1 and C2.

15A and 15B are cross-sectional views schematically showing a light emitting device package according to an embodiment of the present invention.

15A and 15B, the light emitting device package 10E further includes a glass layer 160 disposed on the light controllers 150a, 150b and 150c of the light emitting device package 10 of FIGS. 1A and 2B . The glass layer 160 can prevent the wavelength conversion layers 151a, 151b, and 151c from being deteriorated by moisture or gas of the outside air. A concave-convex structure for improving light extraction efficiency may be formed on the upper surface of the glass layer 160.

16A and 16B are cross-sectional views schematically showing a light emitting device package according to an embodiment of the present invention.

16A and 16B, the light emitting device package 10E may further include a glass layer 160 and a buffer layer 112 as compared to the light emitting device package 10 of FIGS. 1A and 2B. The glass layer 160 is disposed on the light control portions 150a, 150b, and 150c, and can prevent the wavelength conversion layers 151a, 151b, and 151c from being deteriorated by moisture or gas of the outside air. A concave-convex structure for improving light extraction efficiency may be formed on the upper surface of the glass layer 160. The buffer layer 112 may be disposed between the wavelength conversion layers 151a, 151b, and 151c and the first conductivity type semiconductor layer 113. [ The buffer layer 112 may be disposed between the barrier ribs 145 and the isolation insulating layer 126. A part of the separation insulating layer 126 may be inserted into the buffer layer 112. [ The buffer layer 112 is formed on the growth substrate to reduce the defects of the light emitting structure LS and may remain after the growth substrate is removed. The buffer layer 112 may be In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1). For example, the buffer layer may be AlN, AlGaN, or InGaN. If necessary, the buffer layer 112 may be formed of a plurality of layers having different compositions, or may be formed of a single layer whose composition is gradually changed.

17A and 17B are cross-sectional views schematically showing a light emitting device package according to an embodiment of the present invention.

17A and 17B, the light emitting device package 10G differs from the light emitting device package 10 of FIGS. 1A and 2B in that a glass layer 160 is formed on the light control portions 150a, 150b, and 150c And may further include a buffer layer 112 between the wavelength conversion layers 151a, 151b, and 151c and the first conductivity type semiconductor layer 113. In addition, The light emitting device package 10G may have a partition 145 'having a width larger than the width of the upper portion of the isolation insulating layer 126. The barrier ribs 145 'may be formed by patterning a silicon substrate used as a growth substrate. A part of the separating insulating layer 126 may be inserted into the partition wall 145 '. A portion of the second connection electrode 128 'may be disposed between the light emitting regions C1, C2, C3 below the partition wall 145'.

18A and 18B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention. 19A and 19B are cross-sectional views taken along line V-V 'and line VI-VI' of the light emitting device package shown in FIG. 18A.

18A to 19B, the light emitting device package 10H according to an embodiment of the present invention may include a light emitting structure LS having one light emitting region C1.

The light emitting device package 10H includes first and second connection electrodes 627 and 628 disposed in the light emitting region C1, a first electrode pad 631 disposed on the first connection electrode 627, A second electrode pad 632 disposed on the connection electrode 628, a molding portion 634, a light control portion 650, and a barrier rib 645, and the like.

The light control unit 650 may include a wavelength conversion layer 651 and a filter layer 653. The luminescent region C1 may emit UV light or blue light, and the wavelength conversion layer 651 may include a phosphor or a quantum dot.

The light emitting device package 10H may further include a glass layer 660 disposed on the light control part 650. [ A concave-convex structure for improving light extraction efficiency may be formed on the upper surface of the glass layer 660.

The first and second electrode pads 631 and 632 may be disposed adjacent to the sides of the light emitting structure LS.

20A and 20B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention. FIGS. 21A and 21B are cross-sectional views taken along lines VII-VII 'and VIII-VIII' of the light emitting device package shown in FIG. 20A.

20A to 21B, the light emitting device package 20 according to an embodiment of the present invention includes three light emitting regions C1, C2, and C3, like the light emitting device package 10 of FIGS. 1A and 2B. And the first electrode pads 131a and 131b are formed on the first and second insulating layers 121a and 121b, the isolation insulating layer 126, the first contact electrodes 123, the first connection electrodes 127, The second electrode pad 132, the molding part 134, the light modulating parts 150a, 150b, and 150c, and the barrier ribs 145, .

The light emitting device package 20 may further include an encapsulant 180 surrounding the light modulating portions 150a, 150b and 150c, the barrier ribs 145, and the molding portion 134. [ The sealing portion 180 may include a light-transmitting resin. For example, the sealing portion 180 may include an epoxy resin. The lower surface of the first and second electrode pads 131a, 131b, 131c and 132 and the lower surface of the molding part 134 may have a substantially flat surface. And has a bottom surface that is flush with the bottom surface.

The first bonding pads 135a, 135b and 135c connected to the first electrode pads 131a, 131b and 131c and the second bonding pads 136 connected to the second electrode pads 132 may be formed .

The first bonding pads 135a, 135b and 135c and the second bonding pads 136 are formed on the lower surface of the sealing part 180 from the lower surfaces of the first and second electrode pads 131a, 131b, 131c and 132, As shown in FIG.

If the area of the light emitting structure LS is small due to the reduction in chip size, it may be difficult to secure a formation region of the bonding pads. In this case, the sealing region 180 can be used to secure a sufficient formation region of the bonding pads.

The size of the bonding pads 135a, 135b, 135c, and 136 can be set to a predetermined size or larger (for example, the size of one side is 180um or more) The SMT process for mounting the light emitting device package on the substrate can be facilitated.

22A to 25B are views showing process steps for explaining a method of manufacturing a light emitting device package according to an embodiment of the present invention.

Referring to Figs. 22A and 22B, the light emitting chips CP can be attached in a matrix form on the expandable film 190. Fig. The light emitting chips CP may be arranged to have a first spacing dx1 in the first direction (x direction) and a second spacing dy1 in the second direction (y direction). The light emitting chips CP may have the same structure as, for example, the light emitting device package 10 of Figs. 1A and 2B. The electrode pads 131a, 131b, 131c, and 132 of the light emitting chips CP may be attached so as to contact the film 190. [

Referring to FIGS. 23A and 23B, the distance between the light emitting chips CP can be increased by pulling the film 190 in all directions. Therefore, the light emitting chips CP can be arranged to have the third spacing dx2 in the first direction (x direction) and the fourth spacing dy2 in the second direction (y direction). The third spacing dx2 is greater than the first spacing dx1 and the fourth spacing dy2 is greater than the second spacing dy1. The third spacing dx2 and the fourth spacing dy2 may be determined in consideration of the size of the bonding pads to be formed subsequently.

24A and 24B, a sealing portion 180 covering the light emitting chips CP can be formed. The sealing portion 180 may include an epoxy resin having light transmittance. The sealing portion 180 may be applied, for example, by a slit coating method, and then cured. Alternatively, a glass layer may be formed on the top of the sealing part 180.

Referring to FIGS. 25A and 25B, after the film 190 is removed, the remaining structures can be reversed such that the electrode pads 131a, 131b, 131c and 132 face upward. Subsequently, first bonding pads 135a, 135b and 135c connected to the first electrode pads 131a, 131b and 131c and second bonding pads 136 connected to the second electrode pads 132 are formed can do. The first bonding pads 135a, 135b and 135c and the second bonding pads 136 may extend to the surface of the sealing part 180 to have a predetermined size (or area).

Next, by cutting each individual package, the light emitting device package 20 of FIGS. 20A to 21B can be obtained.

26A and 26B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.

Referring to FIGS. 26A and 26B, similar to the light emitting device package 10C of FIGS. 13A to 13B, the light emitting device package 20A according to an embodiment of the present invention includes four light emitting areas C1 ', C2 ', C3', and C4 '). Four light emitting regions C1 ', C2', C3 ', and C4' may be arranged in two rows and two columns. The light emitting device package 20A includes first connection electrodes 427 disposed on the respective light emitting regions C1 ', C2', C3 ', and C4', first and second connection electrodes 427 and 427 disposed on the first connection electrodes 427, The second connection electrode 428 disposed over the four light emitting regions C1 ', C2', C3 ', and C4', the second connection electrode 428, the first connection pads 431a, 431b, 431c, and 431d, A molding portion 434, light modulating portions 450a, 450b, 450c, and 450d, and a barrier rib 445, which are disposed on the first electrode pad 432,

Similar to the light emitting device package 20 of FIGS. 20A to 21B, the light emitting device package 20A surrounds the light modulating portions 450a, 450b, 450c, and 450d, the partition wall 445, and the molding portion 434 And may further include an encapsulating portion 480. The sealing portion 480 may include a light-transmitting resin. For example, the encapsulation 480 may comprise an epoxy resin.

The first bonding pads 435a, 435b, 435c and 453d connected to the first electrode pads 431a, 431b, 431c and 431d and the second bonding pads 436 connected to the second electrode pads 432, Can be formed. The first bonding pads 435a, 435b, 435c and 435d may extend from the lower surface of the first electrode pads 431a, 431b, 431c and 431d to the lower surface of the sealing part 480. The second bonding pad 436 may be formed to have a larger size than the second electrode pad 142 and spaced apart from the first bonding pads 435a, 435b, 435c, and 435d.

If the area of the light emitting structure LS is small due to the reduction in chip size, it may be difficult to secure a formation region of the bonding pads. In this case, the sealing region 480 can be used to secure a sufficient formation region of the bonding pads.

27A and 28B are a plan view and a rear view schematically showing a light emitting device package according to an embodiment of the present invention.

28A and 28B are cross-sectional views taken along the line X-X 'and line XI-XI' of the light emitting device package shown in FIG. 27A.

27A to 28B, the light emitting device package 20B has a structure similar to that of the light emitting device package 20 of FIGS. 20A to 21B, and has an edge of the light emitting structure LS And may further include a metal layer 129 disposed thereon. The metal layer 129 may be disposed below the barrier ribs 145. The width of the partition 145 located at the edge of the light emitting structure LS may be larger than that of the light emitting device package 20. [

The metal layer 129 can prevent the light emitted from the light emitting structure LS from leaking to the side surface of the light emitting device package 20B.

29 is a schematic view of a display panel including a light emitting device package according to an embodiment of the present invention.

29, the display panel 1000 includes a circuit board 1010 including a driving circuit and a control circuit, a pixel 1030 arranged in a plurality of rows and a plurality of rows on a circuit board 1010, 1050, and a polarizing layer 1070. The light emitting device packages according to the embodiments of the present invention may be employed in the pixel 1030. [ In this case, since the size of the pixel 1030 and the pitch of the pixel 1030 can be reduced, a high-resolution image can be displayed. For example, when the light emitting device package 10 described with reference to FIGS. 1A to 2A is employed in the pixel 1030, the three light emitting regions C1, C2, and C3 include three sub- pixel &lt; / RTI &gt;

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative and not restrictive in every respect.

101: substrate
113: a first conductivity type semiconductor layer
115:
117: a second conductivity type semiconductor layer
LS: Light emitting structure
121a, 121b: first and second insulating layers
126: separating insulating layer
123, 124: first and second contact electrodes
127, 128: first and second connecting electrodes
131a, 131b, and 131c:
132: second electrode pad
134: molding part
135a, 135b, 135c: a first bonding pad
136: 2nd bonding pad
145:
150a, 150b, and 150c: first, second, and third light-
151a, 151b and 151c: first, second and third wavelength conversion layers
153a, 153b, and 153c: first, second, and third filter layers
180:

Claims (20)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, the light emitting structure having a first surface and a second surface facing the first surface;
A separation insulating layer extending from the first surface to the second surface to divide the light emitting structure into a plurality of light emitting regions;
A plurality of first electrode pads connected to the first conductivity type semiconductor layer in each of the plurality of light emitting regions, and disposed on the first surface;
A second electrode pad disposed on the first surface of the light emitting structure and connected in common to the second conductivity type semiconductor layer included in each of the plurality of light emitting regions; And
A plurality of wavelength conversion layers disposed on the second surface in each of the plurality of light emitting regions; Emitting device package. The method according to claim 1,
And one surface of the isolation insulating layer is co-planar with the second surface. The method according to claim 1,
And a barrier rib disposed between the plurality of wavelength conversion layers. The method of claim 3,
And the barrier ribs are connected to the isolation insulating layer. 5. The method of claim 4,
And a part of the isolation insulating layer is inserted into the barrier rib. The method according to claim 1,
Wherein at least a part of the plurality of first electrode pads and the second electrode pads is disposed adjacent to a vertex of the first surface. The method according to claim 1,
Wherein the second electrode pad is disposed adjacent to the center of the first surface and the plurality of first electrode pads are disposed adjacent to the vertex of the first surface. The method according to claim 1,
And the second electrode pad is disposed longer than the plurality of first electrode pads. The method according to claim 1,
And a plurality of first connection electrodes provided in each of the plurality of light emitting regions and connecting the first electrode pads to the first conductive type semiconductor layers. 10. The method of claim 9,
Wherein the first connection electrodes are connected to the first conductive type semiconductor layer through the second conductive type semiconductor layer and the active layer. The method according to claim 1,
And a second connection electrode connecting the second electrode pad and the second conductivity type semiconductor layer. 12. The method of claim 11,
And the second connection electrode connects the second conductive semiconductor layers to each other. The method according to claim 1,
And a plurality of filter layers provided on each of the wavelength conversion layers. 14. The method of claim 13,
Wherein the filter layers selectively block light emitted from at least one of the plurality of light emitting regions. The method according to claim 1,
And a glass layer provided on the plurality of wavelength conversion layers. The method according to claim 1,
And a molding part surrounding the light emitting structure, the first electrode pads, and the second electrode pad, and exposing the first electrode pads and the second electrode pads. 17. The method of claim 16,
Wherein the molding part comprises light reflective particles. 17. The method of claim 16,
An encapsulating portion surrounding the light emitting structure, the wavelength conversion layer, and the molding portion; And
First bonding pads connected to the first electrode pads and second bonding pads connected to the second electrode pads; Emitting device package. 19. The method of claim 18,
And at least a part of the first bonding pads and the second bonding pads extend to a bottom surface of the sealing part. The method according to claim 1,
Wherein the isolation insulating layer is a multilayered reflection structure in which a plurality of insulating films having different refractive indices are alternately stacked.

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