KR20170038599A - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

According to an embodiment of the present invention, an organic light emitting display device comprises: an anode electrode; an organic light emitting layer; a cathode electrode; an auxiliary electrode; and a bank. The bank includes: a first bank provided in one side and the other side of the auxiliary electrode; and a second bank connected to the first bank to be separated from an upper surface of the auxiliary electrode. The cathode electrode is connected to the auxiliary electrode through a space separated between the second bank and the upper surface of the auxiliary electrode. The organic light emitting display device can normally connect the cathode electrode and the auxiliary electrode without an effect by penetrating the organic light emitting layer.

Description

Technical Field [0001] The present invention relates to an organic light emitting diode (OLED) display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to an organic light emitting diode display, and more particularly, to a top emission organic light emitting diode display and a method of manufacturing the same.

The organic light emitting diode (OLED) is a self-luminous element having low power consumption, high response speed, high luminous efficiency, high brightness and wide viewing angle.

The organic light emitting diode (OLED) is divided into a top emission type and a bottom emission type according to a transmission direction of light emitted through the organic light emitting diode. In the lower light emitting method, since the circuit element is located between the light emitting layer and the image display surface, the aperture ratio is lowered due to the circuit element. On the other hand, in the upper light emitting method, a circuit element is located between the light emitting layer and the image display surface There is an advantage that the aperture ratio is improved.

1 is a schematic cross-sectional view of a conventional top emission type OLED display.

1, an active layer 11, a gate insulating film 12, a gate electrode 13, an interlayer insulating film 14, a source electrode 15 and a drain electrode 16 are formed on a substrate 10 A passivation layer 20, a planarization layer 30, an anode electrode 40 and an auxiliary electrode 50, a bank 60, and a barrier rib 60 are formed on the thin film transistor layer T, A light emitting layer 70, an organic light emitting layer 80, and a cathode electrode 80 are sequentially formed.

The anode electrode 40 and the auxiliary electrode 50 are formed on the planarization layer 30. The auxiliary electrode 50 serves to reduce the resistance of the cathode electrode 80.

The bank 60 is formed on the anode electrode 40 and the auxiliary electrode 50 to define a pixel region. The bank 60 is formed on one side and the other side of the anode electrode 40 and the auxiliary electrode 50 while exposing the top surfaces of the anode electrode 40 and the auxiliary electrode 50.

The barrier ribs 70 are formed on the auxiliary electrode 50. The barrier ribs 70 are spaced apart from the banks 60 by a predetermined distance and are electrically connected to the auxiliary electrodes 50 and the cathode electrodes 80 through spaced spaces between the barrier ribs 70 and the banks 60. [ Thereby reducing the resistance of the cathode electrode.

The width of the upper surface of the barrier ribs 70 is greater than the width of the lower surface of the barrier ribs 70 so that the upper surface of the barrier ribs 70 covers the spaced spaces between the barrier ribs 70 and the banks 60, 80 do not penetrate into the spaced space between the partition 70 and the bank 60.

The organic light emitting layer 80 is formed in the pixel region defined by the bank 60 and the cathode electrode 90 is formed on the organic light emitting layer 70.

 Such a conventional top emission type OLED display has the following problems.

Fig. 2 is a cross-sectional view specifically showing the partition of Fig. 1;

3A and 3B are diagrams illustrating peeling of barrier ribs generated in a conventional top emission type OLED display.

2, when the barrier ribs 70 are formed in an inverted taper shape, the width X of the upper surface of the barrier ribs 70 must be increased so that the barrier ribs 70 and the banks 60 The organic emission layer 80 can not penetrate into the spaced-apart space.

However, when the width X of the upper surface of the partition 70 is increased, the shape of the partition 70 may be uneven as shown in FIG. 3A due to energy unbalance in the substrate 10, Peeling may occur between the barrier rib 70 and the auxiliary electrode 50. As shown in FIG. 3B, the defective point P is generated in the display panel due to the peeling between the barrier 70 and the auxiliary electrode 50.

Accordingly, in order to prevent peeling between the barrier 70 and the auxiliary electrode 50, the ratio Y / X of the width Y of the lower surface of the partition 70 to the width X of the upper surface is 0.5 Or less.

However, as the organic light emitting diode (OLED) display device becomes larger, equipment for depositing the organic light emitting layer 80 on the substrate 10 is changed. In this equipment, the organic light emitting layer 80 is formed between the partition wall 70 and the bank 60, There is a problem that the cathode electrode 90 can not be connected to the auxiliary electrode 50 due to penetration of the cathode 80.

FIGS. 4A and 4B are views schematically illustrating a structure for depositing an organic light emitting layer in a conventional top emission type OLED display.

4A, conventionally, the organic light emitting layer 80 is evaporated at the corners of the chamber to fix the discharged source S, and the substrate 10 is rotated while the organic A light emitting layer 80 was deposited.

In recent years, as the organic light emitting display device has become larger, there is a problem that it is difficult to uniformly deposit the organic light emitting layer 80 through the fixed source S, so that the substrate 10 is fixed The organic light emitting layer 80 is deposited on the substrate 10 while moving the source S formed in a line shape.

In this case, the organic light emitting layer 80 penetrates between the barrier ribs 70 and the bank 60, and thus the cathode electrode 90 can not be normally connected to the auxiliary electrode 50.

That is, in order to prevent peeling of the barrier ribs 70 and the auxiliary electrodes 50, the width of the upper surface of the barrier ribs 70 should be limited to a certain extent. As the OLED display becomes larger, There is a problem that the organic light emitting layer 80 penetrates through the banks 60 and the cathode electrode 90 can not be connected to the auxiliary electrode 50.

SUMMARY OF THE INVENTION The present invention has been devised to solve the problems of the prior art described above, and it is an object of the present invention to provide an organic light emitting display device of a top emission type capable of normally connecting a cathode electrode and an auxiliary electrode without influence of penetration of the organic emission layer, .

It is another object of the present invention to provide an organic light emitting display device of a top emission type capable of preventing an organic light emitting layer from penetrating into a region where a cathode electrode and an auxiliary electrode are connected through a bank without forming a barrier rib, do

According to an aspect of the present invention, there is provided an organic light emitting diode display having an anode, an organic light emitting layer, a cathode, an auxiliary electrode, and a bank, wherein the bank is provided on one side and the other side of the auxiliary electrode. And a second bank connected to the first bank so as to be spaced apart from the upper surface of the auxiliary electrode. The cathode electrode is connected to the auxiliary electrode through a spaced space between the second bank and the upper surface of the auxiliary electrode.

According to an embodiment of the present invention, there is provided an organic light emitting diode display having a first anode electrode and a first auxiliary electrode formed on a substrate, forming a planarization layer on the first anode electrode and the first auxiliary electrode, A second anode electrode connected to the first anode electrode on the planarization layer, and a second anode electrode connected to the first auxiliary electrode, wherein the first anode electrode and the first auxiliary electrode are formed on the planarization layer, 2 auxiliary electrodes, a first bank is formed on one side and the other side of the second auxiliary electrode, and a second bank connected to the first bank is formed so as to be spaced apart from the upper surface of the second auxiliary electrode.

According to the present invention as described above, the following effects can be obtained.

According to an embodiment of the present invention, the bank is patterned on the upper surface of the auxiliary electrode to prevent the organic light emitting layer from being formed on the upper surface of the auxiliary electrode, thereby electrically connecting the cathode electrode and the auxiliary electrode.

According to an embodiment of the present invention, the time and cost required for the process can be reduced by eliminating the process of forming the barrier ribs.

1 is a schematic cross-sectional view of a conventional top emission type OLED display.
Fig. 2 is a cross-sectional view specifically showing the partition of Fig. 1;
3A and 3B are diagrams illustrating peeling of barrier ribs generated in a conventional top emission type OLED display.
FIGS. 4A and 4B are views schematically illustrating a structure for depositing an organic light emitting layer in a conventional top emission type OLED display.
5 is a plan view of an OLED display according to an embodiment of the present invention.
6 is a cross-sectional view of an OLED display according to an embodiment of the present invention taken along the line " AA " shown in Fig.
7 is a cross-sectional view of an organic light emitting display according to an embodiment of the present invention taken along the line " BB " shown in Fig.
8A to 8H are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention.
9A to 9D are process cross-sectional views illustrating a method of forming a bank of an organic light emitting display according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

5 is a plan view of an OLED display according to an embodiment of the present invention.

Although only one sub-pixel and an auxiliary electrode are shown in FIG. 5, each pixel may include an emissive area (EA) and a transmissive area (TA) provided with four sub-pixels.

Each of the four sub-pixels may be composed of pixels emitting red (R), white (W), blue (B), and green (G), but the present invention is not limited thereto. Hereinafter, each configuration will be described in detail.

A first anode electrode 180, a first auxiliary electrode 190, a second anode electrode 200, a second auxiliary electrode 210, and a cathode electrode 240 are formed on the active region of the pixel, Respectively.

The thin film transistor T supplies a data signal from a data line (not shown) to the first anode electrode 180 in response to a gate signal from a gate line (not shown).

The first anode electrode 180 is formed in the light emitting region of the active region. The first anode 180 is connected to a source electrode (not shown) of the thin film transistor T through a contact hole, and receives a data signal from the thin film transistor T.

The first auxiliary electrode 190 is spaced apart from the first anode 180. The first auxiliary electrode 190 is connected to a cathode electrode 240 together with a second auxiliary electrode 210 to be described later to lower the resistance of the cathode electrode 240. The first auxiliary electrode 190 and the first anode 180 may be formed on the same layer and the same thickness as the first anode 180. In this case, Can be simultaneously formed through the same process.

The second anode electrode 200 is formed in the light emitting region of each sub-pixel. The second anode electrode 200 is connected to the first anode electrode 180 through a contact hole and receives a data signal from the first anode electrode 180.

The second auxiliary electrode 210 is formed on the first auxiliary electrode 190 so as to be spaced apart from the second anode electrode 200. The second auxiliary electrode 210 is connected to the first auxiliary electrode 190 through a contact hole and is connected to the cathode electrode 240 together with the first auxiliary electrode 190, To reduce the resistance. The second auxiliary electrode 210 may be formed on the same layer and the same thickness as the second anode electrode 200. In this case, the second auxiliary electrode 210 may be formed on the second anode electrode 200 ) Can be formed at the same time through the same process.

As described above, the transparent organic light emitting display includes a light emitting region and a transmissive region. The second auxiliary electrode 210 includes a gate line (not shown) and a sensing line (not shown) And can be located on the same wiring. That is, in the embodiment of the present invention, the second auxiliary electrode 210 may be formed between the pixel regions, but the present invention is not limited thereto, so that the second auxiliary electrode 210 may be formed in any region that does not affect the aperture ratio.

The cathode electrode 240 is formed in the entire region including the pixel region including the light emitting region and the transmissive region and between the pixel regions. The cathode electrode 240 is connected to a driving power supply unit (not shown) to receive driving power.

6 is a cross-sectional view of an OLED display according to an embodiment of the present invention taken along the line " A-A " shown in Fig. 6 illustrates a cross-sectional view of the organic light emitting display according to an exemplary embodiment of the present invention taken along the longitudinal direction in which the second auxiliary electrode 210 is formed. In this case, the longitudinal direction means the major axis direction of the second auxiliary electrode 210.

As shown in FIG. 6, the OLED display includes an active area AA and a pad area (not shown) provided on a substrate 100.

A passivation layer 165, a first planarization layer 171, a first anode 180 and a first auxiliary electrode 190, and a second passivation layer 180. The active region AA on the substrate 100 includes a thin film transistor layer T, a passivation layer 165, A second auxiliary electrode 210, a bank 220, an organic light emitting layer 230, and a cathode electrode 240 are formed on the second planarization layer 172, the second anode electrode 200, and the second auxiliary electrode 210, respectively.

The thin film transistor layer T includes an active layer 110, a gate insulating layer 120, a gate electrode 130, an interlayer insulating layer 140, a source electrode 150, and a drain electrode 160.

The active layer 110 is formed on the substrate 100 so as to overlap with the gate electrode 130. The active layer 110 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. Although not shown, a light shielding film may be additionally formed between the substrate 100 and the active layer 110. In this case, external light incident through the lower surface of the substrate 100 is shielded by the light shielding film, The problem that the active layer 110 is damaged by external light can be prevented.

The gate insulating layer 120 is formed on the active layer 110. The gate insulating layer 120 functions to isolate the active layer 110 from the gate electrode 130. The gate insulating layer 120 may be formed of an inorganic insulating material, for example, a silicon oxide layer (SiOx), a silicon nitride layer (SiNX), or a multilayer thereof. However, the gate insulating layer 120 is not limited thereto. The gate insulating layer 120 may extend to the entire pixel region including the transmissive region.

The gate electrode 130 is formed on the gate insulating layer 120. The gate electrode 130 is formed to overlap the active layer 110 with the gate insulating layer 120 therebetween. The gate electrode 130 may be formed of any one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, And may be a single layer or multiple layers made of these alloys, but it is not necessarily limited thereto.

The interlayer insulating layer 140 is formed on the gate electrode 130. The interlayer insulating layer 140 may be formed of the same inorganic insulating material as the gate insulating layer 120, for example, a silicon oxide layer (SiOX), a silicon nitride layer (SiNX), or a multilayer thereof. However, no. The interlayer insulating layer 140 may extend to the entire pixel region including the transmissive region.

The source electrode 150 and the drain electrode 160 are formed to face each other on the interlayer insulating layer 140. The first contact hole CH1 exposing the one end region of the active layer 110 and the second contact hole CH1 exposing the other end region of the active layer 110 are formed in the gate insulating layer 120 and the interlayer insulating layer 140, The source electrode 150 is connected to the other end region of the active layer 110 through the second contact hole CH2 and the drain electrode 160 is connected to the first contact hole CH2, (CH1) to the one end region of the active layer (110).

The source electrode 150 may include a lower source electrode 151 and an upper source electrode 152.

The lower source electrode 151 may be formed between the interlayer insulating layer 140 and the upper source electrode 152 to enhance adhesion between the interlayer insulating layer 140 and the upper source electrode 152. [ have. In addition, the lower source electrode 151 may protect the lower surface of the upper source electrode 152, thereby preventing the lower surface of the upper source electrode 152 from being corroded. Therefore, the degree of oxidation of the lower source electrode 151 may be lower than the degree of oxidation of the upper source electrode 152. That is, the material of the lower source electrode 151 may be made of a material having higher corrosion resistance than the material of the upper source electrode 152. As described above, the lower source electrode 151 serves as an adhesion promoting layer or an anti-corrosion layer, and may be made of an alloy of molybdenum and titanium (MoTi), but is not limited thereto.

The upper source electrode 152 is formed on the upper surface of the lower source electrode 151. The upper source electrode 152 may be made of copper (Cu), which is a metal having a low resistance, but is not limited thereto. The upper source electrode 152 may be formed of a metal having a relatively lower resistance than the lower source electrode 151. In order to reduce the total resistance of the source electrode 150, the thickness of the upper source electrode 152 may be greater than the thickness of the lower source electrode 151.

The drain electrode 160 may include a lower drain electrode 161 and an upper drain electrode 162 similar to the source electrode 150 described above.

The lower drain electrode 161 is formed between the interlayer insulating layer 140 and the upper drain electrode 162 to improve adhesion between the interlayer insulating layer 140 and the upper drain electrode 162 Also, it is possible to prevent the lower surface of the upper drain electrode 162 from being corroded. Therefore, the degree of oxidation of the lower drain electrode 161 may be lower than the degree of oxidation of the upper drain electrode 162. That is, the material of the lower drain electrode 161 may be made of a material having higher corrosion resistance than the material of the upper drain electrode 162. As described above, the lower drain electrode 161 may be made of the same molybdenum and titanium alloy (MoTi) as the lower source electrode 151, but is not limited thereto.

The upper drain electrode 162 is formed on the upper surface of the lower drain electrode 161 and may be made of the same copper as the upper source electrode 152 described above but is not limited thereto. The thickness of the upper drain electrode 162 may be greater than the thickness of the lower drain electrode 161 to reduce the overall resistance of the drain electrode 160.

The upper drain electrode 162 may be formed of the same material and the same thickness as the upper source electrode 152 and the lower drain electrode 161 may be formed of the same material and the same thickness as the lower source electrode 151 In this case, the drain electrode 160 and the source electrode 150 can be simultaneously formed through the same process.

The structure of the thin film transistor layer T as described above is not limited to the structure shown in the drawings, but may be variously modified in a structure known to those skilled in the art. For example, although the top gate structure in which the gate electrode 130 is formed on the active layer 110 is shown in the drawing, the gate electrode 130 may be formed on the bottom layer of the active layer 110, Or a bottom gate structure.

The passivation layer 165 is formed on the thin film transistor layer T and more specifically on the upper surfaces of the source electrode 150 and the drain electrode 160. The passivation layer 165 functions to protect the thin film transistor layer T. The passivation layer 165 may be formed of an inorganic insulating material such as a silicon oxide film (SiOX) or a silicon nitride film (SiNX). However, the present invention is not limited thereto. The passivation layer 165 may extend to the entire pixel region including the transmissive region.

The first planarization layer 171 is formed on the passivation layer 165. The first planarization layer 171 functions to flatten the upper surface of the substrate 100 on which the thin film transistor T is formed. The first planarization layer 171 may be an organic insulation material such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. But it is not necessarily limited thereto. The first planarization layer 171 may extend to the entire pixel region including the transmissive region.

The first anode 180 and the first auxiliary electrode 190 are formed on the first planarization layer 171. That is, the first anode 180 and the first auxiliary electrode 190 are formed on the same layer. The third contact hole CH3 exposing the source electrode 150 is formed in the passivation layer 165 and the first planarization layer 171. The third contact hole CH3 is formed through the third contact hole CH3, (150) and the first anode electrode (180) are connected to each other.

The first anode electrode 180 may include a first lower anode electrode 181, a first upper anode electrode 182, and a first cover anode electrode 183.

The first lower anode electrode 181 is formed between the first planarization layer 171 and the first upper anode electrode 182 and is formed between the first planarization layer 171 and the first upper anode electrode 182, The adhesive strength between the adhesive layer and the adhesive layer can be improved. In addition, the first lower anode electrode 181 may protect the lower surface of the first upper anode electrode 182, thereby preventing the lower surface of the first upper anode electrode 182 from being corroded. Accordingly, the degree of oxidation of the first lower anode electrode 181 may be lower than that of the first upper anode electrode 182. That is, the material of the first lower anode 181 may be made of a material having higher corrosion resistance than the material of the first upper anode 182.

In addition, the first lower anode electrode 181 may protect the upper surface of the source electrode 150, thereby preventing the upper surface of the source electrode 150 from being corroded. Therefore, the degree of oxidation of the first lower anode electrode 181 may be lower than that of the source electrode 150. That is, the material of the first lower anode electrode 181 may be made of a material having higher corrosion resistance than the material of the source electrode 150. Since the first lower anode electrode 181 can prevent the top surface of the source electrode 150 from being corroded, the source electrode 150 can have a two-layer structure. The first lower anode 181 may be made of an alloy of molybdenum and titanium (MoTi), but it is not limited thereto.

The first upper anode electrode 182 is formed between the first lower anode electrode 181 and the first cover anode electrode 183. The first upper anode electrode 182 may be made of copper (Cu) having a low resistance, but is not limited thereto. The first upper anode electrode 182 may be made of a metal having a relatively lower resistance than the first lower anode electrode 181 and the first cover anode electrode 183. In order to reduce the total resistance of the first anode electrode 180, the thickness of the first upper anode electrode 182 is thicker than the thickness of the first lower anode electrode 181 and the first cover anode electrode 183 May be preferably formed.

The first cover anode 183 is formed on the first upper anode 182. The first cover anode 183 is formed to cover the upper surface and side surfaces of the first upper anode electrode 182, thereby preventing the first upper anode electrode 182 from being corroded. Therefore, the degree of oxidation of the first cover anode 183 may be lower than that of the first upper anode 182. That is, the material of the first cover anode 183 may be made of a material having a higher corrosion resistance than the material of the first upper anode 182.

In addition, the first cover anode 183 may be formed to cover the side surface of the first lower anode 181. At this time, the degree of oxidation of the first cover anode 183 may be lower than that of the first lower anode 181. That is, the material of the first cover anode 183 may be made of a material having higher corrosion resistance than the material of the first lower anode 181. The first cover anode 183 may be made of a transparent conductive material such as ITO, however, the present invention is not limited thereto.

The first auxiliary electrode 190 includes a first lower auxiliary electrode 191, a first upper auxiliary electrode 192 and a first cover auxiliary electrode 193 similar to the first anode 180 described above .

The first lower auxiliary electrode 191 is formed between the first planarization layer 171 and the first upper auxiliary electrode 192 and is formed between the first planarization layer 171 and the first upper auxiliary electrode 192, And it is also possible to prevent the lower surface of the first upper auxiliary electrode 192 from being corroded. Accordingly, the degree of oxidation of the first lower auxiliary electrode 191 may be lower than that of the first upper auxiliary electrode 192. That is, the material of the first lower auxiliary electrode 191 may be made of a material having higher corrosion resistance than the material of the first upper auxiliary electrode 192. The first lower auxiliary electrode 191 may be made of the same molybdenum and titanium alloy MoTi as the first lower electrode 181, but is not limited thereto.

The first upper auxiliary electrode 192 is formed between the first lower auxiliary electrode 191 and the first cover auxiliary electrode 193 and is made of the same copper (Cu) as the first upper anode electrode 182 But is not limited thereto. The thickness of the first upper auxiliary electrode 192 having a relatively low resistance is greater than the thickness of each of the first lower auxiliary electrode 191 and the first cover auxiliary electrode 193, The total resistance of the capacitor 190 can be reduced.

The first cover auxiliary electrode 193 is formed on the first top auxiliary electrode 192. The first cover auxiliary electrode 193 is formed to cover the top and side surfaces of the first top auxiliary electrode 192 to prevent the first top auxiliary electrode 192 from being corroded. Therefore, the degree of oxidation of the first cover auxiliary electrode 193 may be lower than that of the first upper auxiliary electrode 192. That is, the material of the first cover auxiliary electrode 193 may be made of a material having higher corrosion resistance than the material of the first upper auxiliary electrode 192.

In addition, the first cover auxiliary electrode 193 may be formed to cover the side surface of the first lower auxiliary electrode 191. At this time, the degree of oxidation of the first cover auxiliary electrode 193 may be lower than that of the first lower auxiliary electrode 191. That is, the material of the first cover auxiliary electrode 193 may be made of a material having higher corrosion resistance than the material of the first lower auxiliary electrode 191. The first cover auxiliary electrode 193 may be made of a transparent conductive material such as ITO, but is not limited thereto.

The first cover auxiliary electrode 193 may be formed of the same material and the same thickness as the first cover anode 183 and the first upper auxiliary electrode 192 may be formed of the same material as the first upper anode electrode 182, The first lower auxiliary electrode 191 may be formed of the same material and the same thickness as the first lower auxiliary electrode 181. In this case, 190 and the first anode 180 can be simultaneously formed through the same process.

The second planarization layer 172 is formed on the first anode 180 and the first auxiliary electrode 190. The second planarization layer 172 functions to flatten the top of the substrate 100 together with the first planarization layer 171 described above. The second planarization layer 172 may be an organic insulation material such as acryl resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, But it is not necessarily limited thereto. The second planarization layer 172 may extend to the entire pixel region including the transmissive region.

The second planarization layer 172 includes a fourth contact hole CH4 and a fifth contact hole CH5. The first anode electrode 180 is exposed by the fourth contact hole CH4 and the first auxiliary electrode 190 is exposed by the fifth contact hole CH5.

The second anode 200 is formed on the second planarization layer 172. The second anode electrode 200 is connected to the first anode electrode 180 through the fourth contact hole CH4. The second anode 200 reflects light emitted from the organic light emitting layer 230 in an upward direction, and thus includes a material having high reflectivity.

Although the second anode 200 is illustrated as a single layer in the exemplary embodiment of the present invention, the second anode 200 may be a double layer or a multi-layer structure including an upper electrode and a lower electrode, The upper electrode, the center electrode, and the lower electrode.

The second auxiliary electrode 210 is formed on the second planarization layer 172 in the same manner as the second anode 200. The second auxiliary electrode 210 is connected to the first auxiliary electrode 190 through the fifth contact hole CH5. The second auxiliary electrode 210 serves to lower the resistance of the cathode electrode 240 together with the first auxiliary electrode 190.

Although the second auxiliary electrode 210 is illustrated as a single layer in the embodiment of the present invention, the second auxiliary electrode 210 may be a double layer or a multi-layered structure including an upper electrode and a lower electrode, The upper electrode, the center electrode, and the lower electrode.

The second anode electrode 200 and the second auxiliary electrode 210 may be formed of the same material and the same thickness. In this case, the second anode electrode 200 and the second auxiliary electrode 210 may be formed by the same process. There is an advantage that it can be formed at the same time.

According to an embodiment of the present invention, two auxiliary electrodes, i.e., a first auxiliary electrode 190 and a second auxiliary electrode 210, which are connected to each other to reduce the resistance of the cathode electrode 240, It is possible to more easily adjust the resistance characteristics of the semiconductor device.

More specifically, since the second auxiliary electrode 210 is formed on the same layer as the second anode electrode 200, when the width of the second auxiliary electrode 210 is increased, the second anode electrode 200, There is a limitation in increasing the width of the second auxiliary electrode 210 because there is a disadvantage in that the pixel area of the display device is reduced. According to an embodiment of the present invention, the first auxiliary electrode 190 connected to the second auxiliary electrode 210 under the second auxiliary electrode 210 is additionally formed, so that the pixel area is not reduced The resistance of the cathode electrode 240 can be effectively lowered.

The first auxiliary electrode 190 is formed on the same layer as the first anode 180. The first anode 180 is connected to the source electrode 150 and the second anode 200, The width of the first anode electrode 180 can be reduced and thus the width of the first auxiliary electrode 190 can be increased. That is, the width of the first auxiliary electrode 190 may be greater than the width of the first anode electrode 180, and further, the first auxiliary electrode 190 may be formed to be larger than the width of the second anode electrode 200 The width of the first auxiliary electrode 190 may be increased so that the resistance of the cathode electrode 240 may be more effectively reduced.

The bank 220 is formed on the second anode electrode 200 and the second auxiliary electrode 210.

The bank 220 is formed on one side and the other side of the second anode electrode 200 while exposing the top surface of the second anode electrode 200. The bank 220 is formed to expose the upper surface of the second anode 200, thereby securing an area for displaying an image. In addition, since the bank 220 is formed on one side and the other side of the second anode electrode 200, the side surface of the second anode electrode 200, which is susceptible to corrosion, is prevented from being exposed to the outside, It is possible to prevent the side surface of the electrode 200 from being corroded.

The bank 220 is formed between the second anode electrode 200 and the second auxiliary electrode 210 to isolate the second anode electrode 200 and the second auxiliary electrode 210 from each other .

Particularly, the bank 220 according to the embodiment of the present invention includes the first bank 220a provided on one side and the other side of the second auxiliary electrode 210, and the first bank 220b disposed on the other side of the second auxiliary electrode 210, And a second bank 220b connected to the first bank 220b. Specifically, the first bank 220a and the second bank 220b are connected to each other at one side and the other side in the longitudinal direction in which the second auxiliary electrode 210 is formed, and the second auxiliary electrode 210 is formed And are spaced apart from each other at one side and the other side in the width direction. 6, when the second bank 220b is cut at one side and the other side of the second auxiliary electrode 210, as shown in FIG. 6, It can be confirmed that the first bank 220a is connected to the first bank 220a.

In this case, if the first bank 220a and the second bank 220b are connected at one side and the other side in the width direction where the second auxiliary electrode 210 is formed, the cathode electrode 240 is connected to the second auxiliary electrode 210, The second auxiliary electrode 210 can be deposited only on one side of the longitudinal direction of the first auxiliary electrode 210 and on the other side of the second auxiliary electrode 210 in the longitudinal direction, have.

Accordingly, in the embodiment of the present invention, the first bank 220a and the second bank 220b are connected at one side and the other side in the longitudinal direction where the second auxiliary electrode 210 is formed, and the second auxiliary electrode 210 The first bank 220a and the second bank 220b are not connected at one side and the other side in the width direction where the second auxiliary electrode 210 is formed, (240) can be connected to the second auxiliary electrode (210). That is, the cathode electrode 240 can be connected to the second auxiliary electrode 210 relatively widely, so that the normal connection between the cathode electrode 240 and the second auxiliary electrode 210 can be realized .

The second auxiliary electrode 210 and the cathode electrode 240 are electrically connected to each other through a spaced space between the upper surface of the second auxiliary electrode 210 and the second bank 220b. As such, in the embodiment of the present invention, the second bank 220b is formed so as to be spaced apart from the second auxiliary electrode 210 to function as eaves, so that it is not necessary to form a separate bank, The resistance of the cathode electrode 240 can be lowered because the cathode electrode 240 is connected to the second auxiliary electrode 210 through the space. The specific process for forming the bank 220 will be described later.

The organic light emitting layer 230 is formed on the second anode 200. The organic light emitting layer 230 includes a hole injecting layer, a hole transporting layer, an emitting layer, an electron transporting layer, and an electron injecting layer. Lt; / RTI > The structure of the organic light emitting layer 230 may be changed into various forms known in the art.

The organic light emitting layer 230 may extend to the upper surface of the bank 220. However, the organic light emitting layer 230 does not extend to the upper surface of the second auxiliary electrode 210 while covering the upper surface of the second auxiliary electrode 210. If the organic light emitting layer 230 covers the upper surface of the second auxiliary electrode 210, electrical connection between the second auxiliary electrode 210 and the cathode electrode 240 becomes difficult. As described above, since the second bank 220b is formed to function like an eave, the organic light emitting layer 230 can be formed through a deposition process without a mask covering the top surface of the second auxiliary electrode 210 .

The cathode electrode 240 is formed on the organic light emitting layer 230. The cathode electrode 240 is formed of a transparent conductive material because it is formed on a surface where light is emitted. The cathode electrode 240 is connected to the second auxiliary electrode 210 in order to reduce the resistance of the cathode electrode 240 because the cathode electrode 240 is made of a transparent conductive material. That is, the cathode electrode 240 is connected to the second auxiliary electrode 210 through a spaced space between the second auxiliary electrode 210 and the second bank 220b. Since the cathode electrode 240 can be formed through a deposition process in which the deposition material such as sputtering is poorly formed, the second auxiliary electrode 210 and the second auxiliary electrode 210 may be formed during the deposition process of the cathode electrode 240. The cathode electrode 240 may be deposited in a spaced space between the second banks 220b.

Although not shown in the drawing, an encapsulation layer may be additionally formed on the cathode electrode 240 to prevent the penetration of moisture. As the sealing layer, various materials known in the art can be used. Further, although not shown, a color filter may be additionally formed on the cathode electrode 240 for each pixel. In this case, white light may be emitted from the organic light emitting layer 230.

7 is a cross-sectional view of an OLED display according to an embodiment of the present invention taken along the line " B-B " shown in Fig. 7 is a cross-sectional view of the organic light emitting display according to an embodiment of the present invention taken along the longitudinal direction in which the second auxiliary electrode 210 is formed. In this case, the direction perpendicular to the longitudinal direction means the minor axis direction of the second auxiliary electrode 210.

7, a gate insulating layer 120, an interlayer insulating layer 140, a passivation layer 165, and a first planarization layer 171 (not shown) are formed on a substrate 100 of an OLED display according to an exemplary embodiment of the present invention. A first auxiliary electrode 190, a second planarization layer 172, a second auxiliary electrode 210, a bank 220, an organic emission layer 230, and a cathode electrode 240 are formed. Although not shown in the drawing, wirings such as a gate line (not shown) and a sensing line (not shown) may be provided on the lower surfaces of the first and second auxiliary electrodes 210 and 210, The first auxiliary electrode 210 and the second auxiliary electrode 210 do not affect the aperture ratio of the transmissive region.

The gate insulating layer 120, the interlayer insulating layer 140, the passivation layer 165, the first planarization layer 171, the first auxiliary electrode 190, the second planarization layer 172, the second auxiliary electrode 210, Are the same as those of the organic light emitting diode display according to FIG. 6, and thus the same reference numerals are assigned to the same components, and only the components that are stacked with different structures will be described below.

The bank 220 includes a first bank 220a provided on one side and the other side of the second auxiliary electrode 210 and a second bank 220b spaced apart from an upper surface of the second auxiliary electrode 210, And a second bank 220b connected thereto.

Particularly, as described above, the first bank 220a and the second bank 220b are connected to each other at one side and the other side in the longitudinal direction in which the second auxiliary electrode 210 is formed, and the second auxiliary electrode The first auxiliary electrode 210 and the second auxiliary electrode 210 are formed so as not to be connected to each other at one side and the other side in the width direction in which the second auxiliary electrode 210 is formed. 220b are separated from the first bank 220a without being connected to the first bank 220a.

In addition, the second bank 220b is formed to have a width that prevents the organic light emitting layer 230 from being deposited in a region below the eaves. The width of the second bank 220b, which can prevent the deposition of the organic light emitting layer 230, may be determined according to an experimental value according to the width of the second auxiliary electrode 210, but is not limited thereto. For example, the second auxiliary electrode 210 is connected to the first auxiliary electrode 190 through the contact hole, and the second bank 220b is formed to have a width wider than the width of the contact hole, It is possible to prevent the light emitting layer 230 from penetrating into the contact hole region.

As described above, in the embodiment of the present invention, the second bank 220b serving as an eave is formed in the step of forming the bank 220 without forming a separate partition, so that the organic light- Deposition on the upper surface of the auxiliary electrode 210 can be prevented.

In particular, when the organic light emitting layer 230 is prevented from being deposited through the barrier ribs, it is necessary to prevent peeling of the barrier ribs, so that the width of the upper surface of the barrier ribs can not be freely adjusted. However, in the embodiment of the present invention, The width of the second bank 220b can be freely adjusted according to the distance the organic light emitting layer 230 penetrates, so that the organic light emitting layer 230 can be prevented from penetrating more effectively.

The organic light emitting layer 230 is formed on the second anode electrode 200 to extend to the upper surfaces of the first and second banks 220a and 220b. However, since the second bank 220b is spaced apart from the upper surface of the second auxiliary electrode 210, the organic light emitting layer 230 may be formed on the second auxiliary electrode 210, And does not extend to the upper surface of the second auxiliary electrode 210 while covering the upper surface.

The cathode electrode 240 is formed on the organic light emitting layer 230. The cathode electrode 240 is connected to the second auxiliary electrode 210 in order to reduce the resistance of the cathode electrode 240 because the cathode electrode 240 is made of a transparent conductive material. Particularly, the cathode electrode 240 according to the embodiment of the present invention is connected to the second auxiliary electrode 210 through a spaced space between the second auxiliary electrode 210 and the second bank 220b have.

8A to 8H are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an embodiment of the present invention, which is related to the method of manufacturing the organic light emitting display according to FIG.

8A, an active layer 110, a gate insulating film 120, a gate electrode 130, an interlayer insulating film 140, a source electrode 150, and a drain electrode 160 are formed on a substrate 100, Respectively.

More specifically, the active layer 110 is formed on the substrate 100, the gate insulating layer 120 is formed on the active layer 110, the gate insulating layer 120 is formed on the gate insulating layer 120, A gate electrode 130 is formed on the gate insulating layer 140 and the interlayer insulating layer 140 is formed on the gate electrode 130. The gate insulating layer 140 and the gate insulating layer 140 are formed with first contact holes CH1, 2 contact hole CH2 and then the drain electrode 160 and the second contact hole CH2 connected to one end region of the active layer 110 through the first contact hole CH1, The source electrode 150 connected to the other end region of the active layer 110 is formed.

The source electrode 150 includes a lower source electrode 151 and an upper source electrode 152 and the drain electrode 160 includes a lower drain electrode 161 and an upper drain electrode 162. The source electrode 150 and the drain electrode 160 may be formed at the same time by the same patterning process using the same material.

8B, a passivation layer 165 is formed on the source electrode 150 and the drain electrode 160, a first planarization layer 171 is formed on the passivation layer 165, do.

The passivation layer 165 and the first planarization layer 171 are formed to have a third contact hole CH3 so that the source electrode 150 is exposed to the outside through the third contact hole CH3 .

Next, as shown in FIG. 8C, the first anode 180 and the first auxiliary electrode 190 are formed on the first planarization layer 171 so as to be spaced apart from each other.

The first anode 180 is formed to be connected to the source electrode 150 through the third contact hole CH3.

The first auxiliary electrode 190 includes a first lower anode electrode 181, a first upper anode electrode 182, and a first cover anode electrode 183, A first lower auxiliary electrode 191, a first upper auxiliary electrode 192, and a first cover auxiliary electrode 193.

The first anode 180 and the first auxiliary electrode 190 may be formed of the same material through the same patterning process.

Next, as shown in FIG. 8D, a second planarization layer 172 is formed on the first anode electrode 180 and the first auxiliary electrode 190.

The second planarization layer 173 is formed to include a fourth contact hole CH4 and a fifth contact hole CH5 so that the first anode electrode 180 is electrically connected to the outside through the fourth contact hole CH4. And the first auxiliary electrode 190 is exposed to the outside through the fifth contact hole CH5.

Next, as shown in FIG. 8E, a second anode electrode 200 and a second auxiliary electrode 210 are formed on the second planarization layer 172 to be spaced apart from each other. The second anode electrode 200 is connected to the first anode electrode 180 through the fourth contact hole CH4 and the second auxiliary electrode 210 is connected to the fifth contact hole CH5 through the fourth contact hole CH4. And is connected to the first auxiliary electrode 190. The second anode electrode 200 and the second auxiliary electrode 210 may be formed of the same material at the same time through the same patterning process.

Next, as shown in FIG. 8F, the banks 220 are formed on the second anode electrode 200 and the second auxiliary electrode 210. Specifically, the first bank 220a is formed on one side and the other side of the second anode electrode 200 while exposing the upper surface of the second anode electrode 200, and the upper surface of the second auxiliary electrode 210 A first bank 220a is formed on one side and the other side of the second auxiliary electrode 210 and a second bank 220b is formed on the other side of the second bank 220a, Thereby forming the bank 220b. Accordingly, in the embodiment of the present invention, it is not necessary to form a separate barrier, and the cathode electrode 240 is electrically connected to the second auxiliary electrode 220 through the spaced space between the second auxiliary electrode 210 and the second bank 220b. The resistance of the cathode electrode 240 can be lowered because it is connected to the electrode 210.

The first bank 220a and the second bank 220b may be formed simultaneously using a halftone mask. Hereinafter, a process of simultaneously forming the first bank 220a and the second bank 220b using a halftone mask will be described in detail.

9A to 9D are process cross-sectional views illustrating a method of forming a bank of an organic light emitting display according to an embodiment of the present invention.

First, as shown in FIG. 9A, a bank layer 220 is formed on the second anode electrode 200 and the second auxiliary electrode 210. More specifically, the bank layer 220 is formed on the entire surface of the active region including the second anode electrode 200 and the second auxiliary electrode 210. In particular, the bank layer 220 according to the embodiment of the present invention may be formed of a photosensitive material of a negative type.

That is, since the bank layer 220 is formed of a photosensitive material of a negative type, the region irradiated with light at the time of exposure remains after the developing process, and the region where light is blocked at the time of exposure has a characteristic of being removed after the developing process .

Next, as shown in FIG. 9B, a photoresist pattern M is formed on the bank layer 220 and aligned. In particular, the photoresist pattern M may be formed in the form of a half-tone mask. Specifically, the photoresist pattern M may include a light-shielding pattern M1 for blocking light at all during exposure, A semi-transmissive pattern M2 and a transmissive pattern M3 through which light is entirely transmitted at the time of exposure.

Next, as shown in FIG. 9C, the bank layer 220 is exposed and developed using the photoresist pattern M as a mask.

9B, since the photoresist pattern M includes the light-shielding pattern M1, the transflective pattern M2, and the transmissive pattern M3, the photoresist pattern M may include the light- Only half of the light is irradiated to the bank layer 220 corresponding to the transflective pattern M2 and only the half of the light is irradiated to the bank layer 220 corresponding to the transmissive pattern M3, 220 are all irradiated with light.

9D, the photoresist pattern M is removed through a strip process so that the first and second banks 220a and 220b are exposed to the outside of the substrate 100, . More specifically, a first bank 220a is formed on one side and the other side of the second anode electrode 200 and on one side and the other side of the second auxiliary electrode 210, A second bank 220b connected to the first bank 220a is formed.

That is, as described above, since the bank layer 220 is made of a photosensitive material of a negative type, all of the bank layers 220 corresponding to the light-shielding pattern M1 and not irradiated with light are all removed, Since the bank layer 220 corresponding to the transmissive pattern M2 and irradiating only half of the light is irradiated with light only to the upper portion, the lower portion is removed to form the second bank 220b, and the bank layer 220 corresponding to the transmissive pattern M3 All of the bank layers 220 irradiated with light are all left to form the first bank 220a. The first bank 220a and the second bank 220b, which are formed at different positions with different thicknesses, can be formed through one halftone mask.

9A to 9D, in the embodiment of the present invention, the first bank 220a and the second bank 220b are simultaneously formed through the same patterning process of the same material.

8G, the organic light emitting layer 230 is formed on the second anode 200. Next, as shown in FIG. The organic light emitting layer 230 may be deposited on the upper surface of the bank 220. The organic light emitting layer 230 may be formed on the upper surface of the bank 220, Deposition is not performed in the spaced space between the second bank 220b and the second auxiliary electrode 210. That is, since the second bank 220b functions as eaves when depositing the organic light emitting layer 230, the organic light emitting layer 230 The organic emission layer 230 may be prevented from being deposited in the spaced space between the second bank 220b and the second auxiliary electrode 210. [

8 (h), a cathode electrode 240 is formed on the organic light emitting layer 230. Next, as shown in FIG.

The cathode electrode 240 is formed to be connected to the second auxiliary electrode 210 through a spaced space between the second bank 220b and the second auxiliary electrode 210. The cathode 240 may be formed by a deposition process such as sputtering in which the linearity of the evaporation material is not favorable. Accordingly, during the deposition process of the cathode 240, The cathode electrode 240 may be deposited in a spaced-apart space between the second auxiliary electrodes 210.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be interpreted as being included in the scope of the present invention.

100: substrate T: thin film transistor layer
165: passivation layer 171, 172: first and second planarization layers
180: first anode electrode 190: first auxiliary electrode
200: second anode electrode 210: second auxiliary electrode
220: bank 230: organic light emitting layer
240: cathode electrode

Claims (10)

An anode electrode provided on the substrate;
An organic light emitting layer provided on the anode electrode;
A cathode electrode provided on the organic light emitting layer;
An auxiliary electrode connected to the cathode electrode; And
And a bank provided on the auxiliary electrode,
Wherein the bank includes a first bank provided on one side and the other side of the auxiliary electrode and a second bank connected to the first bank so as to be spaced apart from an upper surface of the auxiliary electrode,
And the cathode electrode is connected to the auxiliary electrode through a spaced space between the second bank and the upper surface of the auxiliary electrode. The method according to claim 1,
Wherein the first bank and the second bank are connected to each other at one side and the other side in the longitudinal direction in which the auxiliary electrode is formed and are spaced from each other at one side and the other side in the width direction in which the auxiliary electrode is formed. The method according to claim 1,
Wherein the anode electrode comprises a first anode electrode and a second anode electrode connected to the first anode electrode through a contact hole,
The auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode connected to the first auxiliary electrode through a contact hole,
Wherein a width of the first auxiliary electrode is greater than a width of the first anode electrode. The method of claim 3,
Wherein the first auxiliary electrode overlaps with the second anode electrode. The method of claim 3,
The first anode electrode and the first auxiliary electrode are provided in the same layer,
The first anode electrode includes a first lower anode electrode, a first upper anode electrode, and a first cover anode electrode,
Wherein the first auxiliary electrode includes a first lower auxiliary electrode, a first upper auxiliary electrode, and a first cover auxiliary electrode. 6. The method of claim 5,
Wherein an oxidation degree of the first lower anode electrode and the first cover anode is lower than an oxidation degree of the first upper anode electrode and a resistance of the first upper anode electrode is higher than a degree of oxidation of the first lower anode electrode and the first cover anode The degree of oxidation of the electrode is lower,
Wherein the oxidation degree of the first lower auxiliary electrode and the first cover auxiliary electrode is smaller than the oxidation degree of the first upper auxiliary electrode and the resistance of the first upper auxiliary electrode is lower than the oxidation degree of the first lower auxiliary electrode, The degree of oxidation of the electrode is lower than that of the electrode. Forming a first anode electrode on the substrate and a first auxiliary electrode spaced apart from the first anode electrode;
A planarization layer is formed on the first anode electrode and the first auxiliary electrode and a predetermined region of the planarization layer is removed to form contact holes for exposing the first anode electrode and the first auxiliary electrode to the outside fair;
Forming a second anode electrode connected to the first anode electrode on the planarization layer and a second auxiliary electrode connected to the first auxiliary electrode; And
Forming a first bank on one side and the other side of the second auxiliary electrode and forming a second bank connected to the first bank so as to be spaced apart from an upper surface of the second auxiliary electrode; Gt; 8. The method of claim 7,
Wherein the step of forming the first bank and the second bank includes:
Forming a bank layer made of a photosensitive material of a negative type on the second anode electrode and the second auxiliary electrode;
Forming a photoresist pattern on the bank layer;
Exposing and developing the bank layer using the photoresist pattern as a mask, and forming the first bank and the second bank by the remaining bank layers; And
And removing the photoresist pattern. The method of manufacturing an organic light emitting display according to claim 1, 9. The method of claim 8,
Wherein the first bank and the second bank are formed simultaneously using a halftone mask. 8. The method of claim 7,
Forming an organic light emitting layer on the second anode electrode; And
Further comprising forming a cathode electrode on the organic light emitting layer, the cathode electrode being connected to the second auxiliary electrode,
Wherein the organic light emitting layer is deposited in a spaced space between the second bank and the second auxiliary electrode.

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