KR20170036524A - Liquid crystal display device and method for fabricating the same - Google Patents

Abstract

The present invention provides a liquid crystal display device which comprises: a first substrate and a second substrate which are defined by a display unit and a non-display unit and bonded through a seal pattern; a seal pattern blocking dam installed on the non-display unit of the first substrate; a dummy light blocking pattern installed in the second substrate; and a seal pattern installed between the seal pattern blocking dam of the first substrate and the dummy light blocking pattern of the second substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to a liquid crystal display device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display, and more particularly, to a liquid crystal display having a color filter on TFT (COT) structure and a method of manufacturing the same.

In a typical liquid crystal display device, a liquid crystal is injected into a space portion between a top plate and a bottom plate, an electric field is applied between a common electrode formed on a plate surface formed for each pixel and a pixel electrode to change the arrangement of liquid crystals, .

1 is a view schematically showing a conventional liquid crystal display device.

1, a liquid crystal display according to a related art includes a lower substrate (not shown) having a plurality of thin film transistors T formed on a top surface in a vertical direction and having flattening films 33 formed on the top surfaces of the thin film transistors T A color filter 55 and a black matrix 53 and 53a are formed on the lower surface of the lower substrate 11 by a sealant 61. The color filter 55 and the black matrix 53, And a liquid crystal layer 71 which is injected into an inner space between the upper substrate 51 and the lower substrate 11. The liquid crystal layer

The liquid crystal display device is defined by a display portion DA and a non-display portion NDA around the display portion. A column spacer 59 is formed in the display portion DA in correspondence with the periphery of a pixel region (not shown) And functions to maintain a distance between the two substrates 11 and 51. [

The first black matrix 53 among the black matrices 53 and 53a is disposed at a boundary portion between a plurality of pixel regions formed in the display portion DA and the second black matrix 53a is disposed at a boundary portion between non- NDA).

A gate electrode 13 is formed on the lower substrate 11 and a gate insulating film 21 is formed on the gate electrode 13.

A semiconductor layer 23 is formed on the gate insulating film 21 on the gate electrode 13. A source electrode 27 and a drain electrode 29 spaced apart from each other are formed on the semiconductor layer 23 . At this time, the source electrode 27 and the drain electrode 29, and the active layer 23 and the gate electrode 13 constitute a thin film transistor T.

A semiconductor layer 31 is formed on the entire surface of the substrate including the source electrode 27 and the drain electrode 29 and a planarization layer 33 is formed thereon.

A drain contact hole (not shown) for exposing the drain electrode 29 is formed in the planarization film 33. The drain electrode 29 is formed on the planarization film 33 through the drain contact hole 29 are electrically connected to each other.

A seal pattern 61 is disposed between the lower substrate 11 and the upper substrate 51, which are bonded together to form a non-display portion NDA, thereby blocking the liquid crystal from escaping to the outside. At this time, the seal pattern 61 is brought into contact with the second black matrix 53a of the upper substrate 51 located on the non-display portion NDA and the dummy planarizing film 33a of the lower substrate 11. [

A common wiring (not shown), a link portion (not shown), a pad portion (not shown), and the like are disposed under the dummy planarizing film 33a of the non-display portion NDA. Here, the common wiring (not shown), the link portion (not shown), and the pad portion (not shown) will be collectively referred to as the drive circuit wiring 207.

As described above, in the case of manufacturing a liquid crystal panel by attaching the lower substrate 11 and the upper substrate 51 together by attaching the lower substrate 11 and the upper substrate 51, There is a high probability that defects such as light leakage will occur due to errors.

In the conventional liquid crystal display device, the black matrices 53 and 53a of the upper substrate 51 are designed to have a sufficiently wide width in consideration of the cohesion margin of the upper substrate 51 and the lower substrate 11, Is lowered.

The upper surface and the lower surface of the seal pattern 61 disposed in the non-display portion NDA are disposed in contact with the black matrix 53a and the dummy planarizing film 33a, The seal pattern 61 may not be fixed at the time of attaching the seal member 11 or at the time of panel operation, but may be moved to the inside and outside of the non-display portion NDA and spread.

The seal pattern 61 is not fixed at the time of coalescence or panel movement of the two substrates and is moved inward and outward of the non-display portion NDA, considering the fact that studies for trying to reduce the bezel portion, which is the non-display portion of the panel outer frame portion, It is impossible to minimize the size of the bezel of the display device.

In the liquid crystal display device according to the related art, since the width of the black matrix should be designed to be sufficiently wide in consideration of the cohesion margin of the upper plate and the lower plate, there arises a problem that the aperture ratio is lowered.

Further, since the liquid crystal display device according to the related art has a structure in which a color filter is formed on the upper plate, the non-display portion of the lower plate can not effectively block the light incident from the lower portion of the lower plate, do.

SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid crystal display device and a method of manufacturing the same that can prevent a spread of an actual pattern formed at an edge portion between a top plate and a bottom plate by applying a color filter on TFT (COT) have.

According to an aspect of the present invention, there is provided a display device including a first substrate and a second substrate defined by a display portion and a non-display portion, There is provided a liquid crystal display device including a dam, a dummy light blocking pattern provided on the second substrate, and an actual pattern provided between the actual pattern blocking dam on the first substrate and the dummy light blocking pattern on the second substrate .

In the liquid crystal display device according to the present invention, a thread pattern inserting section for holding the thread pattern in the dummy light blocking pattern of the second substrate can be provided.

In the liquid crystal display device according to the present invention, a light shielding pattern may be provided under the yarn pattern blocking dam.

Furthermore, in the liquid crystal display device according to the present invention, the dummy planarization film pattern may be further provided on the actual pattern blocking dam.

In the liquid crystal display device according to the present invention, a black column spacer may be provided on the display portion of the second substrate.

According to another aspect of the present invention, there is provided a method of manufacturing a display device, including: forming a seal pattern blocking dam on a first substrate; forming a dummy light blocking pattern on a display portion of a second substrate, And forming a seal pattern between the seal pattern blocking dam of the first substrate and the dummy light blocking pattern of the second substrate.

In this method of manufacturing a liquid crystal display device, a step of forming a light shielding pattern may be further provided below the thread pattern blocking dam.

Furthermore, in the method for manufacturing a liquid crystal display device, it may further comprise forming a dummy planarization film pattern on the actual pattern blocking dam.

In this method of manufacturing a liquid crystal display device, it may further comprise forming a black column spacer on a display portion of the second substrate.

In this method of manufacturing a liquid crystal display device, the step of forming the black column spacer and the dummy light blocking pattern may be performed simultaneously.

The liquid crystal display device and the method of manufacturing the same according to the present invention can be realized by changing a conventional structure in which a color filter is formed on a top plate to a color filter on TFT (COT) structure in which a color filter is formed on a bottom plate, By forming the yarn pattern blocking dam for controlling the yarn pattern, the spread of the yarn pattern can be prevented, and the bezel size of the apparatus can be minimized.

The liquid crystal display device and the method of manufacturing the same according to the present invention do not need to form a separate black matrix on the upper plate because the COT structure is applied. Therefore, considering the cohesion margin of the upper plate and the lower plate in the existing structure, The problem that the aperture ratio is lowered can be solved.

Furthermore, the liquid crystal display device and the method of manufacturing the same according to the present invention can minimize the size of the bezel by changing the conventional structure in which the color filter is formed on the top plate to a color filter on TFT (COT) structure in which a color filter is formed on the bottom plate , It is possible to effectively block the light incident from the lower portion of the lower plate by using the color pigment in the non-display portion of the lower plate, thereby improving the afterimage characteristic in the non-display portion.

In the present invention, by using an optical density BM column spacer (OD BCS) having a low dielectric constant and omitting a black matrix on a top plate, a light blocking function and a cell gap holding function as well as a light leakage prevention function are effectively Can be performed.

1 is a view schematically showing a conventional liquid crystal display device.
2 is a plan view schematically showing a liquid crystal display device according to the present invention.
FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2, and is a cross-sectional view schematically showing a liquid crystal display device according to an embodiment of the present invention.
4 is a cross-sectional view schematically showing a liquid crystal display device according to another embodiment of the present invention.
5 is a cross-sectional view schematically showing a liquid crystal display device according to another embodiment of the present invention.
6A to 6H are process sectional views schematically showing a method of manufacturing a liquid crystal display device according to an embodiment of the present invention.
7A to 7H are process sectional views schematically showing a method of manufacturing a liquid crystal display device according to another embodiment of the present invention.
8A to 8J are process sectional views schematically showing a method of manufacturing a liquid crystal display device according to another embodiment of the present invention.

Hereinafter, a liquid crystal display according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a plan view schematically showing a liquid crystal display device according to the present invention.

2, a liquid crystal display according to the present invention includes a first substrate 101 on which a pixel electrode, a thin film transistor and a color filter layer are formed, and a second substrate 151 corresponding thereto, The structure is divided into a display unit DA for displaying an image and a non-display unit (NDA) for applying a data signal and a driving signal.

A seal pattern 161 is formed on the non-display portion NDA located around the display portion DA of the liquid crystal panel so as to adhere the first substrate 101 and the second substrate 151, 161 are formed on the inner side and the outer side of the seal pattern 161 to prevent the spreading of the seal pattern 161 to the alignment film (not shown) and the liquid crystal layer (not shown).

Since the seal pattern preventing dam 135b prevents the seal pattern 161 from spreading in and out of the non-display portion NDA, the seal pattern 161 spreads and damages the alignment film, To prevent defects such as stain and light leakage.

FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2, and is a cross-sectional view schematically showing a liquid crystal display device according to an embodiment of the present invention.

3, a liquid crystal display according to an exemplary embodiment of the present invention includes a first substrate 101 having a COT structure in which a display part DA and a non-display part NDA are defined, and a second substrate 151 are bonded together through the seal pattern 161 in the non-display portion NDA of the first substrate 101 and the second substrate 151 with the liquid crystal layer 171 interposed therebetween.

The first substrate 101 may define a plurality of pixel regions (not shown) including a switching region (not shown), and the gate electrode 103, the semiconductor layer 123, and the source electrode And a drain electrode 129. The transparent pixel electrode 141 is formed in the pixel region so as to be in contact with the drain electrode 129. [

Although not shown in the drawing, a gate wiring (not shown) extending from the gate electrode 103 is formed on one side of the pixel region (not shown), and the gate wiring (not shown) is formed on the other side of the pixel region Data interconnections (not shown) that vertically cross each other are formed.

Although not shown in the drawing, a common electrode (not shown) is formed on the first substrate 101. At this time, the common electrode and the pixel electrode 141 are formed on the first substrate 101 and applied with a structure of IPS (In-Plane Switching) or FFS (Fringe Field Switching) mode. However, the present invention is not limited to such a structure, but the pixel electrode 141 is formed on the first substrate 101, and the common electrode (not shown) is formed on the second substrate 151 It is also applicable to a structure of TN (Twist Nematic) type.

A passivation film 131 is formed on the entire surface of the first substrate 101 on which the thin film transistor T is formed.

Blue (G), red (R), and green (B) color filters 133a and 135a (not shown) are formed on the passivation film 131 located in a plurality of pixel regions (not shown). Here, the case where the blue (G) and red (R) color filters 133a and 135a are formed is described in the present invention, but the present invention is not limited thereto. That is, a green (B) color filter (not shown) is formed adjacent to the blue (G) and red (R) color filters 133a and 135a.

A planarizing film 137 made of an organic insulating material, for example, Photo Acryl, is formed on the blue (G) and red (R) color filters 133a and 135a.

A transparent pixel electrode 141 electrically connected to the drain electrode 129 of the thin film transistor T is formed on the planarization film 137 of the pixel region (not shown).

A common electrode (not shown), a link portion (not shown), and a pad portion (not shown) are formed on the non-display portion NDA of the first substrate 101 together with the gate electrode 103. Here, the common wiring (not shown), the link portion (not shown), and the pad portion (not shown) will be collectively referred to as the drive circuit wiring 107.

A light blocking pattern 133b is formed on the driver circuit wiring 107 of the non-display portion NDA. At this time, the light blocking pattern 133b is made of the same material as the material of the blue color filter 133a. The light blocking film pattern 133b is formed to be thinner than the thickness of the blue color filter 133aa.

An actual pattern blocking dam 135b is formed on the light blocking pattern 133b at a predetermined distance. At this time, the seal pattern blocking dam 135b is formed on the non-display portion NDA of the first substrate 101 so as to surround the display portion DA. The seal pattern 161 is seated in the seal pattern blocking dam 135b and is not moved to the inside or outside of the non-display portion NDA. The thread pattern blocking dam 135b may be made of the same material as the red color filter 135a or may be made of the same material as the green color filter (not shown). In the present invention, the case where the yarn pattern blocking dam 135b is made of the same material as the material of the red color filter is described as an example.

The thread pattern blocking dam 135b is formed to be thinner than the red color filter 135a.

 A black column spacer (BCS) 153a is formed on the display portion DA of the second substrate 151 corresponding to the first substrate 101 to maintain a constant cell gap. The black column spacer (BCS) 153a may be formed of a material capable of performing the functions of the black matrix spacer (BCS) 153a without using a conventional black matrix and a column spacer, for example, And OD BCS (Optical Density Black Column Spacer), which has a low dielectric constant.

In particular, the OD BCS (Optical Density Black Column Spacer) has a high transmittance for red pigments but a low transmittance for blue pigments or green pigments, so that it can be used as a substitute for a conventional black matrix.

The non-display portion NDA of the second substrate 151 corresponding to the first substrate 101 is provided with a dummy pattern having a thread pattern inserting portion 154 so that the upper surface of the thread pattern 161 can be seated and fixed. A light blocking pattern 153b is formed. The dummy light blocking pattern 153b is made of the same material as the black column spacer 153a. At this time, the dummy light blocking pattern 153b is formed on the non-display portion NDA of the second substrate 151 so as to surround the display portion DA.

A liquid crystal layer 171 is interposed in the display portion DA between the first substrate 101 and the second substrate 151 and a non-display portion NDA between the first substrate 101 and the second substrate 151 The seal pattern 161 is formed to surround the liquid crystal layer 171 in the display unit DA.

At this time, the lower side of the seal pattern 161 is seated in the seal pattern blocking dam 135b provided in the non-display portion NDA of the first substrate 101 and is not moved to the inside and outside of the non-display portion NDA And the upper side of the thread pattern 161 is seated in the thread pattern insertion portion 154 of the dummy light blocking pattern 15b and fixed without moving.

As described above, in the liquid crystal display device according to an embodiment of the present invention, the conventional structure in which the color filter is formed on the top plate is changed to a COT (color filter on TFT) structure in which a color filter is formed on the bottom plate, By forming the yarn pattern blocking dam for controlling the yarn pattern on the non-display portion of the non-display portion, the spread of the yarn pattern can be prevented.

Since the liquid crystal display device according to the embodiment of the present invention does not need to form a separate black matrix on the top plate because of the COT structure, the width of the black matrix is sufficiently wide considering the cohesion margin of the top plate and the bottom plate in the conventional structure. It is possible to solve the problem of lowering the aperture ratio caused by the design.

Furthermore, the liquid crystal display device according to an embodiment of the present invention can minimize the bezel size by changing the existing structure in which the color filter is formed on the top plate to a color filter on TFT (COT) structure in which a color filter is formed on the bottom plate And the afterimage characteristic can be improved by blocking the light incident from the outside by using the color filter pigment in the non-display portion of the lower plate.

A liquid crystal display according to another embodiment of the present invention will be described with reference to FIG.

4 is a cross-sectional view schematically showing a liquid crystal display device according to another embodiment of the present invention.

4, a liquid crystal display device according to another embodiment of the present invention includes a first substrate 201 having a COT structure in which a display part DA and a non-display part NDA are defined, and a second substrate The first substrate 201 and the second substrate 251 are bonded together through the seal pattern 261 in the non-display portion NDA of the first substrate 201 and the second substrate 251 with the liquid crystal layer 271 interposed therebetween.

The first substrate 201 may define a plurality of pixel regions (not shown) including a switching region (not shown), and the gate electrode 203, the semiconductor layer 223, and the source electrode 227 and a drain electrode 229. A transparent pixel electrode 241 in contact with the drain electrode 229 is formed in the pixel region.

Although not shown in the figure, a gate wiring (not shown) extending from the gate electrode 203 is formed on one side of the pixel region (not shown), and the gate wiring (not shown) is formed on the other side of the pixel region Data interconnections (not shown) that vertically cross each other are formed.

Although not shown in the drawing, a common electrode (not shown) is formed on the first substrate 201. At this time, the common electrode and the pixel electrode 241 are formed on the first substrate 201 and are applied in a structure of IPS (In-Plane Switching) or FFS (Fringe Field Switching) mode. However, the present invention is not limited to such a structure, but the pixel electrode 241 is formed on the first substrate 201 and the common electrode (not shown) is formed on the second substrate 251 It is also applicable to a structure of TN (Twist Nematic) type.

A passivation film 231 is formed on the entire surface of the first substrate 201 on which the thin film transistor T is formed.

Blue (G), red (R), and green (B) color filters 233a and 235a (not shown) are formed on the passivation film 231 located in a plurality of pixel regions (not shown). At this time, the case where the blue (G) and red (R) color filters 233a and 235a are formed is described in the present invention, but the present invention is not limited thereto. That is, a green (B) color filter (not shown) is formed adjacent to the blue (G) and red (R) color filters 233a and 235a.

A planarizing film 237 made of an organic insulating material such as Photo Acryl is formed on the blue (G) and red (R) color filters 233a and 235a.

A transparent pixel electrode 241 electrically connected to the drain electrode 229 of the thin film transistor T is formed on the planarization film 237 of the pixel region (not shown).

A common electrode (not shown), a link portion (not shown), and a pad portion (not shown) are formed on the non-display portion NDA of the first substrate 201 together with the gate electrode 203. Here, the common wiring (not shown), the link portion (not shown), and the pad portion (not shown) will be collectively referred to as the drive circuit wiring 207.

On the driver circuit wiring 207 of the non-display portion NDA, an actual pattern blocking dam 233b having a thread pattern insertion groove 234 into which the lower side of the thread pattern can be inserted is formed. At this time, the seal pattern blocking dam 233b serves to fix the seal pattern 161 without spreading and to block light from being introduced into the lower portion of the non-display portion NDA of the first substrate 101 .

The seal pattern blocking dam 233b is formed on the non-display portion NDA of the first substrate 201 so as to surround the display portion DA. The yarn pattern blocking dam 233b may be made of the same material as the blue color filter 233a or may be made of the same material as the green color filter (not shown). At this time, in the present invention, the case where the yarn pattern blocking dam 233b is formed of the same material as the blue color filter material is described as an example.

The thickness of the thread pattern insertion groove 234 is smaller than the thickness of the blue color filter 233a while the thread pattern blocking dam 233b maintains the same thickness as the thickness of the blue color filter 233a. do.

 A black column spacer (BCS) 253a is formed on the display portion DA of the second substrate 251 corresponding to the first substrate 201 so as to maintain a constant cell gap. The black column spacer (BCS) 253a may be formed of a material capable of performing these functions at the same time, for example, a high optical density and a high color density, instead of a black matrix and a column spacer, And OD BCS (Optical Density Black Column Spacer), which has a low dielectric constant.

In particular, the OD BCS (Optical Density Black Column Spacer) has a high transmittance for red pigments but a low transmittance for blue pigments or green pigments, so that it can be used as a substitute for a conventional black matrix.

The dummy display portion NDA of the second substrate 251 corresponding to the first substrate 201 is provided with a thread pattern inserting portion 254 so that the upper surface of the thread pattern 261 can be seated and fixed. A light blocking pattern 253b is formed. The dummy light blocking pattern 253b is made of the same material as the black column spacer 253a. At this time, the dummy light blocking pattern 253b is formed on the non-display portion NDA of the second substrate 251 so as to surround the display portion DA.

A liquid crystal layer 271 is interposed in the display portion DA between the first substrate 201 and the second substrate 251 and a non-display portion NDA between the first substrate 201 and the second substrate 251 The seal pattern 261 is formed to surround the liquid crystal layer 271 in the display portion DA.

The lower side of the seal pattern 261 is seated in the seal pattern insertion groove 234 of the seal pattern blocking dam 233b of the non-display portion NDA of the first substrate 201, And the upper side of the seal pattern 261 is seated in the seal pattern inserting portion 254 of the dummy light intercepting pattern 253b and fixed without moving.

As described above, in the liquid crystal display device according to another embodiment of the present invention, a conventional structure in which a color filter is formed on a top plate is changed to a COT (color filter on TFT) structure in which a color filter is formed on a bottom plate, By forming a yarn pattern blocking dam for controlling the yarn pattern using a blue pigment having a low transmittance in the non-display portion of the non-display portion, spread of the yarn pattern can be prevented.

Since the liquid crystal display according to another embodiment of the present invention adopts the COT structure, it is unnecessary to form a separate black matrix on the upper plate. Therefore, considering the cohesion margin of the upper plate and the lower plate in the conventional structure, It is possible to solve the problem of lowering the aperture ratio caused by the design.

Further, the liquid crystal display device according to another embodiment of the present invention can minimize the bezel size by changing the existing structure in which the color filter is formed on the upper plate to a color filter on TFT (COT) structure in which a color filter is formed on the lower plate And the afterimage characteristic can be improved by blocking the light incident from the outside by using the color filter pigment in the non-display portion of the lower plate.

A liquid crystal display according to another embodiment of the present invention will now be described with reference to FIG.

5 is a cross-sectional view schematically showing a liquid crystal display device according to another embodiment of the present invention.

5, a liquid crystal display according to another embodiment of the present invention includes a first substrate 301 having a COT structure in which a display portion DA and a non-display portion NDA are defined, The first substrate 301 and the second substrate 351 are joined together through the seal pattern 361 in the non-display portion NDA of the second substrate 351 with the liquid crystal layer 371 interposed therebetween.

The first substrate 301 may define a plurality of pixel regions (not shown) including a switching region (not shown), and the gate electrode 303, the semiconductor layer 323, and the source electrode And a drain electrode 329. A transparent pixel electrode 341 which is in contact with the drain electrode 329 is formed in the pixel region.

Although not shown in the figure, a gate wiring (not shown) extending from the gate electrode 303 is formed on one side of the pixel region (not shown), and the gate wiring (not shown) is formed on the other side of the pixel region Data interconnections (not shown) that vertically cross each other are formed.

Although not shown in the drawing, a common electrode (not shown) is formed on the first substrate 301. At this time, the common electrode and the pixel electrode 341 are formed on the first substrate 301 and are applied in a structure of IPS (In-Plane Switching) or FFS (Fringe Field Switching) mode. However, the present invention is not limited to such a structure, but the pixel electrode 341 is formed on the first substrate 301, and the common electrode (not shown) is formed on the second substrate 351 It is also applicable to a structure of TN (Twist Nematic) type.

A passivation film 331 is formed on the entire surface of the first substrate 301 on which the thin film transistor T is formed.

Blue (G), red (R) and green (B) color filters 333a and 335a (not shown) are formed on the passivation film 331 located in a plurality of pixel regions (not shown). At this time, the case where the blue (G) and red (R) color filters 333a and 335a are formed is described in the present invention, but the present invention is not limited thereto. That is, a green (B) color filter (not shown) is formed adjacent to the blue (G) and red (R) color filters 333a and 335a.

A planarizing film 337 made of an organic insulating material, for example, Photo Acryl, is formed on the blue (G) and red (R) color filters 333a and 335a.

A transparent pixel electrode 341 electrically connected to the drain electrode 329 of the thin film transistor T is formed on the planarization film 137 of the pixel region (not shown).

A common electrode (not shown), a link portion (not shown), and a pad portion (not shown) are formed on the non-display portion NDA of the first substrate 301 together with the gate electrode 303. Here, the common wiring (not shown), the link portion (not shown), and the pad portion (not shown) will be collectively referred to as the drive circuit wiring 307.

A light blocking pattern 333b is formed on the driver circuit wiring 307 of the non-display portion NDA. At this time, the light blocking pattern 333b is made of the same material as the material of the blue color filter 333a. As the light blocking pattern 333b, a green color filter (not shown) may be used instead of the blue color filter 333a. The light blocking film pattern 333b is formed to be thinner than the thickness of the blue color filter 333aa.

An actual pattern blocking dam 335b is formed on the light blocking pattern 333b at a predetermined distance. At this time, the seal pattern blocking dam 335b is formed on the non-display portion NDA of the first substrate 301 so as to surround the display portion DA. The seal pattern 361 is seated in the seal pattern blocking dam 335b and is not moved left and right. The yarn pattern blocking dam 335b may be made of the same material as the red color filter 335a or may be made of the same material as the green color filter (not shown). In the present invention, the case where the yarn pattern blocking dam 335b is formed of the same material as the material of the red color filter is described as an example.

The thread pattern blocking dam 335b is formed to be thinner than the red color filter 335a.

Furthermore, a dummy planarization film pattern 337a is formed on the seal pattern blocking dam 335b. At this time, a certain thread pattern insertion groove (not shown) is formed at the center of the dummy planarization film pattern 337a so that the thread pattern 361 can be seated. The dummy planarization film pattern 337a is formed to be thinner than the planarization film 337 formed on the display portion of the first substrate 301.

A black column spacer (BCS) 353a is formed on the display portion DA of the second substrate 351 corresponding to the first substrate 301 to maintain a constant cell gap. The black column spacer (BCS) 353a may be formed of a material capable of performing the functions of the black matrix spacer (BCS) 353a without using a conventional black matrix and column spacer, for example, And OD BCS (Optical Density Black Column Spacer), which has a low dielectric constant.

In particular, the OD BCS (Optical Density Black Column Spacer) has a high transmittance for red pigments but a low transmittance for blue pigments or green pigments, so that it can be used as a substitute for a conventional black matrix.

The non-display portion NDA of the second substrate 351 corresponding to the first substrate 301 is provided with a dummy pattern having a thread pattern inserting portion 354 so that the upper surface of the thread pattern 361 can be seated and fixed. A light blocking pattern 353b is formed. The dummy light blocking pattern 353b is made of the same material as the black column spacer 353a. At this time, the dummy light blocking pattern 353b is formed on the non-display portion NDA of the second substrate 351 so as to surround the display portion DA.

A liquid crystal layer 371 is interposed in the display portion DA between the first substrate 301 and the second substrate 351 and a non-display portion NDA between the first substrate 301 and the second substrate 351 The seal pattern 361 is formed to surround the liquid crystal layer 371 in the display portion DA.

At this time, the lower side of the seal pattern 361 is located inside the thread pattern insertion groove of the dummy planarization film pattern 337a stacked on the thread pattern blocking dam 335b provided in the non-display portion NDA of the first substrate 301 And the upper side of the seal pattern 361 is seated in the seal pattern inserting portion 354 of the dummy light intercepting pattern 353b and fixed without moving.

As described above, in the liquid crystal display according to another embodiment of the present invention, a conventional structure in which a color filter is formed on a top plate is changed to a COT (color filter on TFT) structure in which a color filter is formed on a bottom plate, It is possible to effectively prevent the spreading of the actual pattern by forming the actual pattern blocking dam and the dummy planarizing film pattern for controlling the actual pattern on the non-display portion of the substrate.

In addition, since the liquid crystal display device according to another embodiment of the present invention adopts the COT structure, it is unnecessary to form a separate black matrix on the upper plate. Therefore, considering the cohesion margin of the upper plate and the lower plate in the conventional structure, It is possible to solve the problem of the reduction of the aperture ratio caused by the design of forming a large area.

Furthermore, the liquid crystal display according to another embodiment of the present invention can minimize the bezel size by changing the existing structure in which the color filter is formed on the top plate to a color filter on TFT (COT) structure in which a color filter is formed on the bottom plate And the color filter pigment is used for the non-display portion of the lower plate to block the light incident from the outside, whereby the afterimage characteristic can be improved.

A method of manufacturing a liquid crystal display device according to an embodiment of the present invention having the above-described structure will be described with reference to FIGS. 6A to 6H.

6A to 6H are process sectional views schematically showing a method of manufacturing a liquid crystal display device according to an embodiment of the present invention.

6A, a first substrate 101 and a second substrate 151 corresponding to the first substrate 101 are prepared. In the method of manufacturing a liquid crystal display device according to an embodiment of the present invention, as shown in FIG.

Then, a display portion DA is defined on the first substrate 101 and a second substrate 151, and a non-display portion NDA is defined around the display portion DA.

Next, a plurality of pixel regions (not shown) including a switching region (not shown) are defined on the display portion DA of the first substrate 101. [

Then, a gate electrode 103 corresponding to the switching region and a gate wiring (not shown) connected thereto and extending along one side of the pixel region are formed at the same time. At this time, a common electrode (not shown) may be formed at the time of forming the gate electrode 103.

A common wiring (not shown), a link portion (not shown), and a pad portion (not shown) are formed in the non-display portion NDA of the first substrate 101 together with the gate electrode 103. Here, the common wiring (not shown), the link portion (not shown), and the pad portion (not shown) will be collectively referred to as the drive circuit wiring 107.

Next, a semiconductor layer 123 is formed on the gate electrode 103 with the gate insulating layer 121 therebetween. At this time, the semiconductor layer 123 has a stacked structure of an active layer (not shown) and an ohmic contact layer (not shown).

A source electrode 127 and a drain electrode 129 spaced from each other on the semiconductor layer 123 and a data line (not shown) extending from the source electrode 127 are formed.

The gate electrode 103, the semiconductor layer 123, the source electrode 127 and the drain electrode 129 constitute a thin film transistor T.

The common electrode (not shown) is formed on the first substrate 101 and is applied to a structure of IPS (In-Plane Switching) or FFS (Fringe Field Switching) mode. However, the present invention is not limited to such a structure, but can be applied to a TN (Twist Nematic) type structure in which a common electrode (not shown) is formed on a second substrate 151.

Next, a passivation film (not shown in FIG. 3) is formed on the entire surface of the first substrate 101 on which the thin film transistor T is formed, though it is not shown in the drawing.

Then, blue (G), red (R) and green (B) color filters 133a and 135a (not shown) are sequentially formed on the passivation film 131 located in a plurality of pixel regions do.

The process of forming the blue (G), red (R) and green (B) color filters 133a and 135a (not shown) will be described in detail. A photosensitive blue color filter pigment layer 133 is formed on the entire surface of the first substrate 101 including the first substrate 101 and the driving circuit wiring 107.

Then, the exposure process is performed using the first halftone mask 134 using the diffraction characteristic of light. At this time, the first halftone mask 134 includes a transmissive portion 134a for transmitting light entirely, a transflective portion 134b for transmitting a part of light, and a blocking portion 134c for blocking light.

Then, after the exposure process using the first halftone mask 134 is performed, a development process is performed to remove a portion of the blue color filter pigment layer 133 exposed to light. As a result, as shown in FIG. 6C, A blue color filter 133a is formed in a pixel region (not shown) of the display portion DA of the first substrate 101 and a light blocking pattern 133b is formed in the non-display portion NDA of the first substrate 101 . The light blocking pattern 133b is formed after the exposure process is performed through the transflective portion 134b of the first halftone mask 134. The thickness of the light blocking pattern 133b is set so that the thickness of the blue color filter 133a Is formed to be thinner than the thickness.

6D, a photosensitive red color filter pigment layer 135 is formed on the entire surface of the first substrate 101 including the blue color filter 133a and the light blocking pattern 133b.

Then, the exposure process is performed using the second halftone mask 136 using the diffraction characteristics of light. The second halftone mask 136 includes a transmissive portion 136a for transmitting light entirely, a transflective portion 136b for transmitting a part of light, and a blocking portion 136c for blocking light.

Then, after the exposure process using the second halftone mask 136 is performed, a development process is performed to remove the red color filter pigment layer 135 exposed to light, A red color filter 135a is formed adjacent to the blue color filter 133a in a pixel region (not shown) of the display portion DA of the first substrate 101 and a non-display portion NDA of the first substrate 101 is formed. An actual pattern blocking dam 135b is formed on the light blocking pattern 133b so that an actual pattern can be inserted. In this case, the thread pattern blocking dam 135b is formed after the exposure process through the semi-transparent portion 136b of the second halftone mask 136, As shown in FIG.

Next, a planarizing layer (not shown in FIG. 3) formed of an organic material, for example, Photo Acryl, is formed on the entire surface of the first substrate 101, though not shown in the drawing.

Then, a drain contact hole (not shown) exposing the drain electrode 129 to the planarization film 137 is performed by exposing the planarization film 137 to an exposed portion through a developing process, . At this time, when the drain contact hole (not shown) is formed, the blue or red color filter portion under the planarizing film 137 is also removed.

Next, although not shown in the drawing, a transparent conductive material layer (not shown) is formed on the planarization film 137, and the exposed portion of the conductive material layer is exposed and developed to remove the exposed portions of the drain contact hole The pixel electrode 141 is formed to be electrically connected to the drain electrode 129 through a through hole (not shown).

Then, a lower alignment layer (not shown) is formed on the entire surface of the first substrate 101 including the pixel electrode 141, although not shown in the drawing.

On the other hand, as shown in FIG. 6F, an optical density black column spacer (OD BCS) 153 is formed on the second substrate 151.

Then, the exposure process is performed using the third halftone mask 155 using the diffraction characteristics of light. The third halftone mask 155 includes a transmissive portion 155a for transmitting light entirely, a transflective portion 155b for transmitting a part of light, and a blocking portion 155c for blocking light.

Then, after the exposure process using the third halftone mask 155 is performed, a developing process is performed to remove the portion of the light-density black column spacer layer 153 exposed to light, as shown in FIG. 6G A black column spacer 153a is formed in a pixel region (not shown) of the display portion DA of the second substrate 151 and the upper side of the seal pattern is inserted into the non-display portion NDA of the second substrate 151 A dummy light blocking pattern 153b having a thread pattern insertion portion 154 is formed. The black column spacer 153a serves as a conventional column spacer, i.e., to maintain a cell gap.

 Here, the thread pattern inserting portion 154 of the dummy light blocking pattern 153b is formed after the exposure process is performed through the transflective portion 155b of the third halftone mask 155, Is formed to be thinner than the thickness of the black column spacer 153a.

Next, although not shown, an upper alignment layer (not shown) is formed on the entire surface of the second substrate 151 including the black column spacer 153a.

6H, a liquid crystal layer 171 is filled in the display portion DA between the first substrate 101 and the second substrate 151, and the liquid crystal layer 171 is filled in the display portion DA between the first substrate 101 and the second substrate 151. Then, The LCD device manufacturing process according to an embodiment of the present invention is completed by forming the seal pattern 161 on the non-display portion NDA between the first substrate 151 and the second substrate 151. [

At this time, the seal pattern 161 is disposed between the seal pattern blocking dam 135b in the non-display portion NDA between the first substrate 101 and the second substrate 151, Is formed in the pattern inserting section (154). Particularly, the seal pattern 161 is fixed without moving to the inside and outside of the non-display portion by the seal pattern blocking dam 135b and the dummy light blocking pattern 153b, thereby preventing breakage of the seal pattern.

As described above, in the method of manufacturing a liquid crystal display device according to an embodiment of the present invention, a conventional structure in which a color filter is formed on a top plate is changed to a COT (color filter on TFT) structure in which a color filter is formed on a bottom plate, By forming an actual pattern blocking dam for controlling the actual pattern on the non-display portion of the substrate on which the substrate is to be formed, the spread of the actual pattern can be prevented.

Since the method of manufacturing a liquid crystal display device according to an embodiment of the present invention does not require a black matrix to be formed on the top plate because the COT structure is used, It is possible to solve the problem of lowering the aperture ratio caused by designing to be sufficiently wide.

Further, in the method of manufacturing a liquid crystal display device according to an embodiment of the present invention, the existing structure in which a color filter is formed on a top plate is changed to a color filter on TFT (COT) structure in which a color filter is formed on a bottom plate, And the afterimage characteristic can be improved by blocking the light incident from the outside by using the color filter pigment in the non-display portion of the lower plate.

A method of manufacturing a liquid crystal display device according to another embodiment of the present invention will be described with reference to FIGS. 7A to 7H.

7A to 7H are process sectional views schematically showing a method of manufacturing a liquid crystal display device according to another embodiment of the present invention.

7A, a first substrate 201 and a second substrate 251 corresponding to the first substrate 201 are prepared according to another embodiment of the present invention.

Then, a display portion DA is defined on the first substrate 201 and a second substrate 251, and a non-display portion NDA is defined around the display portion DA.

Next, a plurality of pixel regions (not shown) including a switching region (not shown) are defined in the display portion DA of the first substrate 201.

Then, corresponding to the switching region, a gate electrode 203 and a gate wiring (not shown) connected thereto and extending along one side of the pixel region are formed at the same time. At this time, a common electrode (not shown) may be formed at the time of forming the gate electrode 203.

A common wiring (not shown), a link portion (not shown), and a pad portion (not shown) are formed on the non-display portion NDA of the first substrate 201 together with the gate electrode 203. Here, the common wiring (not shown), the link portion (not shown), and the pad portion (not shown) will be collectively referred to as the drive circuit wiring 207.

Next, a semiconductor layer 223 is formed on the gate electrode 202 with a gate insulating film 221 therebetween. At this time, the semiconductor layer 223 has a stacked structure of an active layer (not shown) and an ohmic contact layer (not shown).

A source electrode 227 and a drain electrode 229 spaced from each other on the semiconductor layer 223 and a data line (not shown) extending from the source electrode 227 are formed.

The gate electrode 203, the semiconductor layer 223, the source electrode 227 and the drain electrode 229 constitute a thin film transistor T.

The common electrode (not shown) is formed on the first substrate 201 and is applied in a structure of IPS (In-Plane Switching) or FFS (Fringe Field Switching) mode. However, the present invention is not limited to such a structure, but can be applied to a TN (Twist Nematic) type structure in which a common electrode (not shown) is formed on a second substrate 251.

Next, a passivation film (not shown in FIG. 4, 231) is formed on the entire surface of the first substrate 201 on which the thin film transistor T is formed.

Then, blue (G), red (R) and green (B) color filters 233a and 235a (not shown) are sequentially formed on the passivation film 231 located in a plurality of pixel regions do.

The process of forming the blue (G), red (R) and green (B) color filters 233a and 235a (not shown) will be described in detail. A blue color filter layer 233 of a photosensitive color is formed on the entire surface of the first substrate 201 including the first substrate 201 and the driving circuit wiring 207.

Then, the exposure process is performed using the first halftone mask 234 using the diffraction characteristics of light. At this time, the first halftone mask 234 includes a transmissive portion 234a for transmitting light entirely, a transflective portion 234b for transmitting a part of light, and a blocking portion 234c for blocking light.

Next, after the exposure process using the first halftone mask 234 is performed, a development process is performed to remove the portion of the blue color filter pigment layer 233 exposed to light. As a result, as shown in FIG. 7C, A blue color filter 233a is formed in a pixel region (not shown) of the display portion DA of the first substrate 201 and a non-display portion NDA of the first substrate 201 is provided with a thread pattern insertion Thereby forming an actual pattern blocking dam 233b having a groove 233c.

At this time, the thread pattern insertion groove 233c is formed after the exposure process through the transflective portion 234b of the first halftone mask 234, and its thickness is the same as the thickness of the blue color filter 233a, As shown in FIG.

The yarn pattern blocking dam 233b functions to confine the yarn pattern and to block the light incident from the lower portion of the first substrate 201. [ In particular, the yarn pattern blocking dam 233b is made of the same material as the blue color filter 233a, and functions to block light because the light transmittance is remarkably low.

7D, a photosensitive red color filter pigment layer 235 is formed on the entire surface of the first substrate 201 including the blue color filter 233a and the seal pattern blocking dam 233b.

Then, the exposure process is performed using the exposure mask 236. At this time, the exposure mask 236 is composed of a transmission portion 236a for transmitting light entirely, and a blocking portion 236b for blocking light.

Then, after the exposure process using the exposure mask 236 is performed, a development process is performed to remove the red color filter pigment layer 235 exposed to the light, thereby forming the first substrate A red color filter 235a is formed adjacent to the blue color filter 233a in a pixel region (not shown) of the display portion DA of the liquid crystal display panel 201. [ At this time, the red color filter pigment layer 235 in the non-display area NDA of the first substrate 201 is completely removed.

Next, a planarizing film (not shown in FIG. 4) formed of an organic material, for example, Photo Acryl, is formed on the entire surface of the first substrate 201, though not shown in the drawing.

Then, a drain contact hole (not shown) exposing the drain electrode 229 to the planarization layer 237 is performed by exposing the planarization layer 237 to an exposure process, . At this time, when forming the drain contact hole (not shown), the blue or red color filter portion under the planarization film 237 is also removed.

Although not shown in the drawing, after a transparent conductive material layer (not shown) is formed on the planarization layer 237, the exposed portion of the conductive material layer is exposed and developed to remove the exposed portions of the drain contact hole (See 241 in FIG. 4) that is electrically connected to the drain electrode 229 through a gate electrode (not shown).

Then, although not shown in the drawing, a lower alignment layer (not shown) is formed on the entire surface of the first substrate 201 including the pixel electrode 241.

On the other hand, as shown in FIG. 7F, an optical density black column spacer (OD BCS) 253 is formed on the second substrate 251.

Then, the exposure process is performed using the second halftone mask 255 using the diffraction characteristic of light. The second halftone mask 255 includes a transmissive portion 255a for transmitting light entirely, a transflective portion 255b for transmitting a part of light, and a blocking portion 255c for blocking light.

Then, after the exposure process using the second halftone mask 255 is performed, a developing process is performed to remove the portion of the light-density black column spacer layer 253 exposed to the light, as shown in FIG. 7G A black column spacer 253a is formed in a pixel region (not shown) of the display portion DA of the second substrate 251 and the upper side of the seal pattern is inserted into the non-display portion NDA of the second substrate 251 A dummy light blocking pattern 253b having a thread pattern insertion portion 254 is formed. The black column spacer 253a serves as a conventional column spacer, that is, to maintain a cell gap.

 At this time, the thread pattern inserting portion 254 of the dummy light blocking pattern 253b is formed after the exposure process through the semi-transparent portion 255b of the second halftone mask 255, Is formed to be thinner than the thickness of the black column spacer 253a.

Next, an upper alignment layer (not shown) is formed on the entire surface of the second substrate 151 including the black column spacer 253a.

7H, a liquid crystal layer 271 is filled in the display part DA between the first substrate 201 and the second substrate 251, and the liquid crystal layer 271 is filled with the liquid crystal layer 271, The liquid crystal display device manufacturing process according to another embodiment of the present invention is completed by forming the seal pattern 261 in the non-display portion NDA between the first substrate 251 and the second substrate 251.

At this time, the seal pattern 261 is inserted into the seal pattern insertion groove 233c in the seal pattern blocking dam 235b in the non-display portion NDA between the first substrate 201 and the second substrate 251, Pattern insertion portion 254 of the cut-off pattern 253b. Particularly, the seal pattern 261 is fixed without being moved laterally by the seal pattern blocking dam 235b and the dummy light blocking pattern 253b, thereby preventing the seal pattern from breaking.

As described above, in the method of manufacturing a liquid crystal display device according to another embodiment of the present invention, a conventional structure in which a color filter is formed on a top plate is changed to a COT (color filter on TFT) structure in which a color filter is formed on a bottom plate, By forming an actual pattern blocking dam for controlling the actual pattern on the non-display portion of the substrate on which the substrate is to be formed, the spread of the actual pattern can be prevented.

Since the method of manufacturing a liquid crystal display device according to another embodiment of the present invention does not require a black matrix to be formed on the top plate because the COT structure is used, It is possible to solve the problem of lowering the aperture ratio caused by designing to be sufficiently wide.

Further, in the method of manufacturing a liquid crystal display device according to another embodiment of the present invention, the existing structure in which a color filter is formed on a top plate is changed to a COT (color filter on TFT) structure in which a color filter is formed on a bottom plate, And the afterimage characteristic can be improved by blocking the light incident from the outside by using the color filter pigment in the non-display portion of the lower plate.

A method of manufacturing a liquid crystal display device according to another embodiment of the present invention will be described with reference to FIGS. 8A to 8J.

8A to 8J are process sectional views schematically showing a method of manufacturing a liquid crystal display device according to another embodiment of the present invention.

8A, a first substrate 301 and a second substrate 351 corresponding to the first substrate 301 are prepared. In the method of manufacturing a liquid crystal display device according to another embodiment of the present invention, as shown in FIG.

Next, a display portion DA is defined on the first substrate 301 and a second substrate 351, and a non-display portion NDA is defined around the display portion DA.

Next, a plurality of pixel regions (not shown) including a switching region (not shown) are defined in the display portion DA of the first substrate 301.

Then, a gate electrode 303 corresponding to the switching region and a gate wiring (not shown) connected to the gate electrode 303 and extending along one side of the pixel region are formed at the same time. At this time, a common electrode (not shown) may be formed at the time of forming the gate electrode 303.

A common wiring (not shown), a link portion (not shown), and a pad portion (not shown) are formed in the non-display portion NDA of the first substrate 301 together with the gate electrode 303. Here, the common wiring (not shown), the link portion (not shown), and the pad portion (not shown) will be collectively referred to as the drive circuit wiring 307.

Next, a semiconductor layer 323 is formed on the gate electrode 303 with a gate insulating film 321 interposed therebetween. At this time, the semiconductor layer 323 has a stacked structure of an active layer (not shown) and an ohmic contact layer (not shown).

A source electrode 327 and a drain electrode 329 spaced from each other on the semiconductor layer 323 and a data line (not shown) extending from the source electrode 327 are formed.

The gate electrode 303, the semiconductor layer 323, the source electrode 327 and the drain electrode 329 constitute a thin film transistor T.

The common electrode (not shown) is formed on the first substrate 301 and is applied in a structure of IPS (In-Plane Switching) or FFS (Fringe Field Switching) mode. However, the present invention is not limited to such a structure but may be applied to a TN (Twist Nematic) type structure in which a common electrode (not shown) is formed on a second substrate 351.

Next, a passivation film (not shown in FIG. 5, 331) is formed on the entire surface of the first substrate 301 on which the thin film transistor T is formed.

Then, blue (G), red (R) and green (B) color filters 333a and 335a (not shown) are sequentially formed on the passivation film 331 located in a plurality of pixel regions do.

The process of forming these blue (G), red (R) and green (B) color filters 333a and 335a (not shown) will be described in detail. A photosensitive blue color filter pigment layer 333 is formed on the entire surface of the first substrate 301 including the first substrate 301 and the driving circuit wiring 307.

Then, the exposure process is performed using the first halftone mask 334 using the diffraction characteristic of light. The first halftone mask 334 includes a transmissive portion 334a for transmitting light entirely, a transflective portion 334b for transmitting a part of light, and a blocking portion 334c for blocking light.

Then, after the exposure process using the first halftone mask 334 is performed, a development process is performed to remove a portion of the blue color filter pigment layer 333 exposed to light, A blue color filter 333a is formed on a pixel region (not shown) of the display portion DA of the first substrate 301 and a light blocking pattern 333b is formed on the non-display portion NDA of the first substrate 301 . The light blocking pattern 333b is formed after the exposure process is performed through the transflective portion 334b of the first halftone mask 334. The thickness of the light blocking pattern 333b is set such that the thickness of the blue color filter 333a Is formed to be thinner than the thickness.

8D, a photosensitive red color filter pigment layer 335 is formed on the entire surface of the first substrate 301 including the blue color filter 333a and the light blocking pattern 333b.

Then, the exposure process is performed using the second halftone mask 336 using the diffraction characteristics of light. At this time, the second halftone mask 336 includes a transmissive portion 336a for transmitting light entirely, a transflective portion 336b for transmitting a part of light, and a blocking portion 336c for blocking light.

Then, after the exposure process using the second halftone mask 336 is performed, a development process is performed to remove the red color filter pigment layer 335 exposed to light, The red color filter 335a is formed adjacent to the blue color filter 333a in the pixel region (not shown) of the display portion DA of the first substrate 301 and the non-display portion NDA of the first substrate 301, An actual pattern blocking dam 335b is formed on the light blocking pattern 333b so that an actual pattern can be inserted. At this time, the actual pattern blocking dam 335b is formed after the exposure process through the semi-transparent portion 336b of the second halftone mask 336, As shown in FIG.

8F, a planarizing film 337 made of an organic material such as Photo Acryl is formed on the entire surface of the first substrate 301. Next, as shown in FIG.

Then, the exposure process is performed using the third halftone mask 339 using the diffraction characteristic of light. The third halftone mask 339 includes a transmissive portion 339a for transmitting light entirely, a transflective portion 339b for transmitting a part of light, and a blocking portion 339c for blocking light.

Then, after the exposure process using the third halftone mask 339 is performed, a developing process is performed to form a portion of the flattening film 337 in the non-display portion NDA of the first substrate 301 exposed to light 8G, a flattening film pattern 337a is formed on the display portion DA of the first substrate 301 and the flattening film pattern 337a is formed on the surface of the yarn pattern blocking dam 335b on the non-display portion NDA A dummy planarization film pattern 337b is formed. The dummy light shielding film pattern 337b is formed after the exposure process through the transflective portion 339b of the third halftone mask 339. The thickness of the dummy light shielding film pattern 337b is the same as the thickness of the planarizing film pattern 337a, As shown in FIG.

Although not shown in the drawing, the planarizing film pattern 337a is subjected to an exposure process, and then the exposed portion is removed by a developing process, thereby to expose the drain electrode 329 to the planarization film pattern 337a Thereby forming a contact hole (not shown). At this time, when the drain contact hole (not shown) is formed, the blue or red color filter portion under the planarization film pattern 337a is also removed.

Then, although not shown in the drawing, a transparent conductive material layer (not shown) is formed on the planarization film pattern 337a, and then the exposed portion of the conductive material layer is exposed and developed, And a pixel electrode 341 electrically connected to the drain electrode 329 is formed through a hole (not shown).

Next, a lower alignment layer (not shown) is formed on the entire surface of the first substrate 301 including the pixel electrode 341, although not shown in the figure.

On the other hand, as shown in FIG. 8H, an optical density black column spacer (OD BCS) 353 is formed on the second substrate 351.

Then, the exposure process is performed using the third halftone mask 355 using the diffraction characteristic of light. The third halftone mask 355 includes a transmissive portion 355a for transmitting light entirely, a transflective portion 355b for transmitting a part of light, and a blocking portion 355c for blocking light.

Then, after the exposure process using the fourth halftone mask 355 is performed, a development process is performed to remove the portion of the light-density black column spacer layer 353 exposed to light, as shown in FIG. 8I, A black column spacer 353a is formed in the pixel region (not shown) of the display portion DA of the second substrate 351 and the upper side of the seal pattern is inserted into the non- A dummy light blocking pattern 353b having a thread pattern inserting portion 354 is formed. The black column spacer 353a serves as a conventional column spacer, that is, to maintain a cell gap.

 The thread pattern inserting portion 354 of the dummy light blocking pattern 353b is formed after the exposure process through the semi-transparent portion 355b of the fourth halftone mask 355, Is formed to be thinner than the thickness of the black column spacer 353a.

Then, an upper alignment layer (not shown) is formed on the entire surface of the second substrate 351 including the black column spacer 353a.

8J, a liquid crystal layer 371 is filled in the display portion DA between the first substrate 301 and the second substrate 351, and the liquid crystal layer 371 is filled in the display portion DA between the first substrate 301 and the second substrate 351, The LCD device manufacturing process according to still another embodiment of the present invention is completed by forming the seal pattern 361 on the non-display portion NDA between the first and second substrates 351 and 351. [

At this time, the seal pattern 361 is formed on the dummy planarization film pattern 337b on the seal pattern blocking dam 335b in the non-display portion NDA between the first substrate 301 and the second substrate 351, Pattern insertion portion 354 of the light intercepting pattern 353b. Particularly, the seal pattern 361 is fixed without being moved left and right by the seal pattern blocking dam 335b and the dummy light blocking pattern 353b, thereby preventing the seal pattern from breaking.

As described above, in the method of manufacturing a liquid crystal display device according to another embodiment of the present invention, a conventional structure in which a color filter is formed on a top plate is changed to a COT (color filter on TFT) structure in which a color filter is formed on a bottom plate, It is possible to prevent the spreading of the actual pattern by forming the actual pattern blocking dam and the dummy planarization film pattern for controlling the actual pattern on the non-display portion of the substrate on which the substrate is located.

In addition, since the method of manufacturing a liquid crystal display device according to another embodiment of the present invention does not require a black matrix to be formed on the top plate because the COT structure is used, in consideration of the cohesion margin between the top plate and the bottom plate, The problem of lowering the aperture ratio due to the design of forming a sufficiently large area can be solved.

Further, in the method of manufacturing a liquid crystal display device according to another embodiment of the present invention, the existing structure in which the color filter is formed on the top plate is changed to a color filter on TFT (COT) structure in which a color filter is formed on the bottom plate, And the afterimage characteristic can be improved by blocking the light incident from the outside by using the color filter pigment in the non-display portion of the lower plate.

133b: light blocking pattern 135b: yarn pattern blocking dam
153a: Black column spacer 153b: Dummy light blocking pattern
154: yarn pattern insertion section 161: yarn pattern

Claims (16)

A first substrate and a second substrate which are defined by a display portion and a non-display portion and are joined together through an actual pattern;
An actual pattern blocking dam provided on a non-display portion of the first substrate;
A dummy light blocking pattern provided on the second substrate; And
And a seal pattern provided between the seal pattern blocking dam of the first substrate and the dummy light blocking pattern of the second substrate. The liquid crystal display device according to claim 1, further comprising a thread pattern insertion portion for holding the thread pattern in the dummy light blocking pattern in the non-display portion of the second substrate. The liquid crystal display of claim 1, wherein a light blocking pattern is provided under the seal pattern blocking dam. The liquid crystal display of claim 1, wherein a dummy planarization film pattern is provided on the seal pattern blocking dam. The liquid crystal display of claim 1, wherein a black column spacer is provided on a display portion of the second substrate. The liquid crystal display of claim 5, wherein the black column spacer and the dummy light blocking pattern are formed of the same material layer. 2. The liquid crystal display device of claim 1, wherein the seal pattern blocking dam is provided with a thread pattern insertion groove for holding a thread pattern. The liquid crystal display of claim 1, wherein the seal pattern blocking dam is provided in a non-display portion in a form of enclosing a display portion of the first substrate. Forming an actual pattern blocking dam on the first substrate;
Forming a dummy light blocking pattern on a display portion of a second substrate that is attached to the first substrate in correspondence with the first substrate; And
And forming a seal pattern between the seal pattern blocking dam of the first substrate and the dummy light blocking pattern of the second substrate. 10. The method of claim 9, further comprising forming a light blocking pattern under the seal pattern blocking dam. 10. The method of claim 9, further comprising forming a dummy planarization film pattern on the seal pattern blocking dam. 10. The method of claim 9, further comprising forming a black column spacer on a display portion of the second substrate. The method of claim 9, wherein forming the black column spacer and the dummy light blocking pattern are simultaneously performed. The method of claim 9, further comprising forming blue, red, and green color filters on a display portion of the first substrate. 15. The method of claim 14, wherein forming the seal pattern blocking dam and forming the red color filter are simultaneously performed. 15. The method of claim 14, wherein forming the seal pattern blocking dam and forming the blue color filter are simultaneously performed.

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