KR20170034496A - Crystallization method of polycrystalline for Amorphous silicon thin film - Google Patents

Crystallization method of polycrystalline for Amorphous silicon thin film Download PDF

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KR20170034496A
KR20170034496A KR1020150132813A KR20150132813A KR20170034496A KR 20170034496 A KR20170034496 A KR 20170034496A KR 1020150132813 A KR1020150132813 A KR 1020150132813A KR 20150132813 A KR20150132813 A KR 20150132813A KR 20170034496 A KR20170034496 A KR 20170034496A
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amorphous silicon
thin film
silicon layer
silicon thin
polycrystalline
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KR1020150132813A
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Korean (ko)
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김주식
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김주식
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Abstract

The present invention relates to a method of crystallizing an amorphous silicon thin film into a polycrystalline silicon thin film, and more particularly, to a method of crystallizing an amorphous silicon thin film by forming an amorphous silicon layer on an upper portion of the buffer layer, Depositing an amorphous silicon layer on the amorphous silicon layer, irradiating the amorphous silicon layer with pulsed light to melt the amorphous silicon layer, and crystallizing the melted silicon layer to form a polycrystalline silicon layer.
The use of the polycrystalline crystallization method of the amorphous silicon thin film according to the present invention makes it possible to replace the excimer laser used for crystallizing amorphous silicon without damaging the substrate, The construction of the process is simplified, and the cost for installing and maintaining the heat source generating device is reduced, so that the manufacturing cost can be reduced.

Description

[0001] The present invention relates to a method of crystallizing a polycrystalline silicon thin film,

The present invention relates to a method of crystallizing an amorphous silicon thin film formed on an insulating film such as a glass substrate into a polycrystalline silicon thin film, and more particularly, to a method of crystallizing an amorphous silicon thin film into a polycrystalline silicon thin film by replacing excimer lasers By using pulsed light as a heat source, it is possible to easily control a process by replacing a laser apparatus which is complicated in the conventional structure and which requires a high cost, in forming amorphous silicon into a polycrystalline silicon thin film without damaging the substrate, It becomes possible to simplify the process and reduce the manufacturing cost.

In general, silicon can be divided into amorphous silicon and crystalline silicon depending on the crystal state.

Amorphous silicon can be deposited at a low temperature to form a thin film and is mainly used for a switching device of a liquid crystal panel using a glass having a low melting point as a substrate. However, the amorphous silicon thin film has difficulty in lowering the electrical characteristics and reliability of the liquid crystal panel driving device and the size of the display device.

In general, commercialization of a large-area, high-precision, high-definition and panel-image driving circuit, integrated laptop computer, and wall-mounted TV liquid crystal display device has excellent electric characteristics (for example, high field effect mobility (30 cm 2 / VS) And high-frequency operation characteristics and low leakage current), which require application of high-grade poly crystalline silicon. Particularly, the electric characteristics of the polycrystalline silicon thin film are greatly influenced by the grain size, and as the grain size increases, the field effect mobility also increases.

There are several methods for crystallizing a silicon thin film to form a polycrystalline silicon thin film. A brief description will be given below.

① Direct deposition of polycrystalline silicon thin film (as-deposition)

This method is a method of directly depositing on a glass substrate at a temperature of 580 캜 or higher and a pressure of 0.1-0.2 Torr. However, since a general glass substrate can not withstand such a high temperature for a long time, it is disadvantageous to apply it to a large glass panel.

② Solid Phase Crystallization (SPC) method

As the most direct and long-term method for obtaining a polycrystalline silicon thin film from amorphous silicon, silicon ions are implanted into the deposited film and annealed at a temperature of 600 ° C or less for at least several hours. The size of the final grain depends on the dose of the implanted silicon ions, the heating temperature, the heating time, and the like.

The polycrystalline silicon thin film obtained by this SPC method has relatively large grains of usually a few micrometers in size, but it has a disadvantage that there are many defects in the grain.

③ Rapid Thermal Annealing (RTA) method

As a method having high throughput, the heating temperature is about 700 ° C to 1,100 ° C, and the heating time is several seconds. Defects in grains are advantageous over SPC methods, but deformation or damage to the substrate during heating is a critical drawback.

④ CW (Continuous Wave) Argon (Ar) method

This is a method of crystallizing with an argon (Ar) laser using a continuous wave.

⑤ Eximer laser annealing method

Currently, a key method for fabricating low-temperature polycrystalline silicon TFT-LCDs is to turn amorphous silicon into polycrystalline silicon instantaneously by "turning on" the laser beam within a short time of 30-200 ns.

Most of the problems encountered in the production of poly-Si are that the process temperature can not be sufficiently raised to the temperature at which the amorphous silicon (a-Si) film is crystallized due to the use of the glass substrate which is weak at high temperatures.

Processes requiring high-temperature heat treatment in the production of poly-Si include crystallization, which converts an amorphous silicon (a-Si) thin film into a crystalline silicon thin film, and activation heat treatment, which activates electrons after doping Activation).

Currently, various processes (LTPS: Low Temperature poly-Si) for forming a polycrystalline silicon thin film within a short time at a low temperature allowed by a glass substrate have been proposed. Typical methods for forming a polycrystalline silicon thin film include solid phase crystallization SPC, Solid Phase Crystallization, Excimer Laser Annealing (ELA), and Metal Induced Crystallization (MIC).

Solid Phase Crystallization (SPC) is the most direct and long-term method for obtaining a poly-Si thin film from amorphous silicon (a-Si) as described above. The amorphous silicon thin film is heated at a temperature of 600 ° C or higher for several tens of hours To obtain a polycrystalline silicon thin film having a crystal grain size of a few microns or less.

The polycrystalline silicon thin film obtained by this method has a high defect density in the crystal grains and a high heat treatment temperature, which makes it difficult to use a glass substrate and has a long processing time due to a long heat treatment.

Excimer laser annealing (ELA) is a method of melting and recrystallizing an amorphous silicon thin film without damaging the glass substrate by irradiating the amorphous silicon thin film with an excimer laser for a nanosecond time. However, ELA has been known to have significant problems in the mass production process. The grain structure of the poly-Si thin film according to the laser dose is very uneven in the ELA. ELA has a problem in that it is difficult to produce a uniform crystalline silicon thin film because the process range is narrow. Further, the surface of the polycrystalline silicon thin film is rough, which adversely affects the characteristics of the device.

Such a problem is more serious in the application of an organic light emitting diode (OLED) in which the uniformity of a thin film transistor (TFT) is important.

To overcome these problems, the proposed method is Metal Induced Crystallization (MIC). The MIC is a method of inducing crystallization of silicon by applying a metal catalyst to amorphous silicon by sputtering or spin coating method followed by heat treatment at a low temperature. Various metals such as nickel (Ni), copper (Cu), aluminum (Al) and palladium (Pd) can be used as the metal catalyst. In general, nickel (Ni) is used as a metal catalyst in MICs, in which reaction control is easy and large grains are obtained. The MIC can be crystallized at a low temperature of less than 700 DEG C, but there is a considerable problem to be applied to an actual mass production process. This problem is that a considerable amount of metal diffused in the active region of the TFT causes typical metal contamination, thereby increasing leakage current, one of the TFT characteristics.

Also, according to Korean Patent Registration No. 1493600 (polycrystalline crystallization method of amorphous silicon thin film) in the prior art, in a crystallization method for polycrystallization of amorphous silicon thin film by irradiating laser light, it is possible to irradiate a pulse laser with the prepared amorphous silicon thin film A helium-neon laser source capable of irradiating a laser source and a helium-neon (He-Ne) laser capable of measuring TRR signals, respectively, and a detector capable of obtaining reflected light reflected from the two laser sources And a TRR signal (melting value) of the silicon thin film according to fluence is obtained through laser irradiation. The laser of the pulse laser source is irradiated twice at arbitrary intervals, The condition parameters of the laser for the second irradiation are TRR (corresponding to the molten value of the silicon thin film according to the first irradiation) Two crystal structures of the first to examine the pulse laser amorphous silicon (a-Si) at a time point after which the call is increased TRR signal decreases again crystallized into a polycrystalline silicon (poly silicon).

However, the above-mentioned invention has a complicated structure for a process including a laser device for irradiating a pulsed laser and a helium-neon laser device capable of irradiating a helium-neon (He-Ne) ) Is difficult to control the process for crystallizing the crystal structure into poly-silicon, and it takes a lot of cost to install and maintain the laser device, which increases manufacturing cost.

In addition, the development of low temperature poly-Si (LTPS) has been carried out for the purpose of application to liquid crystal display devices. However, recently, active matrix organic light emitting diodes (AMOLEDs) and thin film polycrystalline silicon solar cells And the need for development is increasing.

Korean Patent No. 1493600

In order to solve the above problems, the present invention provides a method of manufacturing a heat source device, which can easily control a process by replacing an excimer laser used for crystallizing amorphous silicon without damaging the substrate, The present invention provides a polycrystalline crystallization method of an amorphous silicon thin film which can reduce manufacturing cost by reducing the cost required for installation and maintenance.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems,

Preparing an insulating substrate (S1);

Forming a buffer layer on the insulating substrate;

Depositing an amorphous silicon layer on top of the buffer layer (S3);

(S5) of irradiating the amorphous silicon layer with pulsed light to melt the amorphous silicon layer; And

Crystallizing the molten silicon layer to form a polycrystalline silicon layer (S6);

The present invention also provides a method for polycrystalline crystallization of an amorphous silicon thin film.

The insulating substrate is made of any one of silicon, glass, and plastic.

Applying the conductive ink to the upper portion of the amorphous silicon layer, and removing the conductive ink using an etching process on the crystallized polycrystalline silicon layer.

The flash lamp includes a flash lamp for generating pulse light in the step of irradiating the amorphous silicon layer with pulse light to melt the amorphous silicon layer, a power supply for supplying power to the flash lamp, And a control unit for controlling the pulse light to emit pulsed light.

The pulse light is composed of a pulse duration of 1-10 ms and a pulse stop period of 1-50 ms, and has a pulse number of 1-100 pulses and a pulse energy of 1-80 J / cm 2.

As described above, by using the polycrystalline crystallization method of the amorphous silicon thin film according to the present invention, it becomes possible to replace the excimer laser used for crystallizing amorphous silicon without damaging the substrate in the past, Thereby simplifying the construction of the process and reducing the cost of installing and maintaining the heat source generating device, thereby reducing the manufacturing cost.

Fig. 1 is a diagram showing a configuration for a conventional excimer laser instantaneous illumination (ELA).
2 is a view showing a laser mask pattern used in the conventional excimer laser instantaneous irradiation method.
3 is a schematic process diagram of a polycrystalline crystallization method of an amorphous silicon thin film according to the present invention.
4 is a process diagram showing an embodiment of a polycrystalline crystallization method of an amorphous silicon thin film according to the present invention.
5 is a cross-sectional view of an amorphous silicon thin film according to the present invention.
6 is a configuration diagram of a photo-calcining apparatus for polycrystallization of an amorphous silicon thin film according to the present invention.

The present invention relates to a method for crystallizing an amorphous silicon thin film formed on an insulating film such as a glass substrate into a polycrystalline silicon thin film and includes a step S1 of preparing an insulating substrate 11 and a step of forming a buffer layer depositing an amorphous silicon layer 13 on the buffer layer 12 in step S3; depositing a pulsed light 110 on the amorphous silicon layer 13; (S5) of melting the amorphous silicon layer (13), and forming a polycrystalline silicon layer (14) by crystallizing the molten silicon layer (S6).

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

Most of the problems typically encountered in the production of polycrystalline silicon (poly-Si) are that the process temperature can not be sufficiently raised to the temperature at which the amorphous silicon (a-Si) film crystallizes due to the use of a vulnerable glass substrate at high temperatures.

As a result, a typical method for crystallizing a polycrystalline silicon thin film by crystallizing an amorphous silicon thin film is an excimer laser annealing (ELA), which is a method of instantly irradiating an amorphous silicon thin film with an excimer laser during a nano- And melting and recrystallizing the amorphous silicon thin film without damaging the glass substrate.

However, the ELA has a problem that the grain structure of a poly-Si thin film according to laser irradiation amount is very uneven.

This is because the process range through the excimer laser is narrow and it is difficult to produce a uniform crystalline silicon thin film.

As a method for solving this problem, there is used a method of repetitively irradiating a laser while overlapping a part of a transmissive region through which a laser is transmitted by using a laser mask as shown in Figs.

However, this method has a problem in that a discontinuous region exists in the crystallized silicon thin film because the crystallization characteristic is different in the overlap region.

In addition, there is a problem that installation and maintenance of a laser device for generating an excimer laser requires a large cost.

In order to solve the above problems, a pulse light 110 is used instead of a laser as a heat source for crystallizing an amorphous silicon thin film formed on an insulating film such as a glass substrate into a polycrystalline silicon thin film.

A step S1 of preparing an insulating substrate 11 and a step S2 of forming a buffer layer 12 on the insulating substrate 11 and a step S2 of forming an amorphous silicon layer on the buffer layer 12, (S5) of irradiating the amorphous silicon layer (13) with a pulsed light (110) to deposit the amorphous silicon layer (13) on the amorphous silicon layer (13) And forming a layer 14 (S6).

That is, by replacing the excimer laser used for crystallizing the amorphous silicon thin film into the polycrystalline silicon thin film without damaging the substrate, the use of the strong pulse light 110 as the heat source makes it possible to reduce the installation cost and maintenance cost of the photocasting apparatus, It is possible to treat the region of the heat source in a wider range than the excimer laser, and it is possible to simultaneously irradiate the amorphous silicon thin film with the pulse light 110 of the same intensity.

Accordingly, the polycrystalline silicon thin film according to the present invention has a wide process range, and thus it is possible to manufacture a uniform crystalline silicon thin film.

The conductive ink 15 is applied to the upper portion of the amorphous silicon layer 13 and the conductive ink 15 is removed using an etching process on the crystallized polycrystalline silicon layer 14 Step S7 may be further included.

That is, as another embodiment, the conduction efficiency of the heat source is increased by applying the conductive ink 150 to the upper portion of the amorphous silicon layer 13 and then irradiating the pulsed light 110 to adjust the intensity of the pulsed light 110 And the heat source is transferred to the amorphous silicon layer 13 through the uniformly coated conductive ink 150, thereby making it easier to manufacture uniform crystals.

A flash lamp 100 for generating a pulse light 110 in the step S5 of irradiating the amorphous silicon layer 13 with the pulsed light 110 to melt the amorphous silicon layer 13; And a controller 300 for controlling the flash lamp 100 and the power supply 200 to emit the pulsed light 110. The power supply 200 supplies power to the light source 100, .

That is, as a photolithography apparatus for generating the pulse light 110, a flash lamp 100 configured to be capable of irradiating light of uniform intensity, a power supply apparatus (not shown) electrically connected to the flash lamp 100 to supply power And a control unit 300 connected to the flash lamp 100 and the power supply unit 200 and controlling the flash lamp 100 to emit a strong pulse light 110 instantaneously.

Here, the pulse light 110 is composed of a pulse duration of 1-10 ms and a pulse stop period of 1-50 ms, and is configured to have a pulse number of 1-100 pulses and a pulse energy of 1-80 J / . An example of the photocasting apparatus for generating the specific pulse light 110 may be a pulsed phosphor of NOVACENTRIX.

However, the present invention is not limited thereto, and may be variously applied depending on the state of the buffer layer 12 including the amorphous silicon layer 13, the state of the insulating substrate 11, and the constitution of the conductive ink 15.

10: Body
11: insulating substrate
12: buffer layer
13: amorphous silicon layer (a-Si layer)
14: polycrystalline silicon layer
15: Conductive ink
100: Flash lamp
110: Pulse light
200: Power supply
300:

Claims (6)

Preparing an insulating substrate (S1);
Forming a buffer layer on the insulating substrate;
Depositing an amorphous silicon layer on top of the buffer layer (S3);
(S5) of irradiating the amorphous silicon layer with pulsed light to melt the amorphous silicon layer; And
Crystallizing the molten silicon layer to form a polycrystalline silicon layer (S6);
Wherein the amorphous silicon thin film is a polycrystalline silicon thin film. The method according to claim 1,
Wherein the insulating substrate is made of any one of silicon, glass, and plastic. The method according to claim 1,
Applying a conductive ink to the upper portion of the amorphous silicon layer (S4);
Removing the conductive ink using an etching process on top of the crystallized polycrystalline silicon layer (S7);
Wherein the amorphous silicon thin film is a polycrystalline silicon thin film. The method according to claim 1,
In the step (S5) of irradiating the amorphous silicon layer with pulsed light to melt the amorphous silicon layer,
A flash lamp for generating pulse light,
A power supply for supplying power to the flash lamp,
And a control unit for controlling the flash lamp and the power supply unit to emit the pulsed light. The method of polycrystalline crystallization of amorphous silicon thin film according to claim 1, The method according to claim 1,
Wherein the pulse light has a pulse duration of 1-10 ms and a pulse duration of 1-50 ms, and has a pulse number of 1-100 pulses and a pulse energy of 1-80 J / cm 2. / RTI > 6. The method of claim 5,
Wherein the light growth value is a pulse furnace of NOVACENTRIX corporation.
KR1020150132813A 2015-09-21 2015-09-21 Crystallization method of polycrystalline for Amorphous silicon thin film KR20170034496A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190111723A (en) * 2018-03-23 2019-10-02 잉 홍 Low temperature poly-Si Semiconductor Device and method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101493600B1 (en) 2013-07-12 2015-02-13 주식회사 에프에스티 Crystallization method of polycrystalline for Amorphous silicon thin film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101493600B1 (en) 2013-07-12 2015-02-13 주식회사 에프에스티 Crystallization method of polycrystalline for Amorphous silicon thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190111723A (en) * 2018-03-23 2019-10-02 잉 홍 Low temperature poly-Si Semiconductor Device and method thereof

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