KR20170029638A - 에피택셜 성장 동안 형성되는 핵을 제거 방법 - Google Patents

에피택셜 성장 동안 형성되는 핵을 제거 방법 Download PDF

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Publication number
KR20170029638A
KR20170029638A KR1020177005543A KR20177005543A KR20170029638A KR 20170029638 A KR20170029638 A KR 20170029638A KR 1020177005543 A KR1020177005543 A KR 1020177005543A KR 20177005543 A KR20177005543 A KR 20177005543A KR 20170029638 A KR20170029638 A KR 20170029638A
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KR
South Korea
Prior art keywords
group
semiconductor
semiconductor structures
etching
substrate
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Ceased
Application number
KR1020177005543A
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English (en)
Korean (ko)
Inventor
이제형
나열
김영식
정우식
Original Assignee
스트라티오 인코포레이티드
주식회사 스트라티오코리아
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Application filed by 스트라티오 인코포레이티드, 주식회사 스트라티오코리아 filed Critical 스트라티오 인코포레이티드
Priority to KR1020187006394A priority Critical patent/KR102424567B1/ko
Publication of KR20170029638A publication Critical patent/KR20170029638A/ko
Ceased legal-status Critical Current

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    • H01L21/30604—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H01L21/02057—
    • H01L21/02082—
    • H01L21/02636—
    • H01L21/3081—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned

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  • Recrystallisation Techniques (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020177005543A 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법 Ceased KR20170029638A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020187006394A KR102424567B1 (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562165816P 2015-05-22 2015-05-22
US62/165,816 2015-05-22
US15/051,362 US9378950B1 (en) 2015-05-22 2016-02-23 Methods for removing nuclei formed during epitaxial growth
US15/051,362 2016-02-23
PCT/US2016/033783 WO2016191371A1 (en) 2015-05-22 2016-05-23 Methods for removing nuclei formed during epitaxial growth

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187006394A Division KR102424567B1 (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법

Publications (1)

Publication Number Publication Date
KR20170029638A true KR20170029638A (ko) 2017-03-15

Family

ID=56136460

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020177005543A Ceased KR20170029638A (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법
KR1020187006394A Active KR102424567B1 (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020187006394A Active KR102424567B1 (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법

Country Status (6)

Country Link
US (1) US9378950B1 (enExample)
EP (2) EP3111466A4 (enExample)
JP (1) JP6787786B2 (enExample)
KR (2) KR20170029638A (enExample)
CN (1) CN106663598B (enExample)
WO (1) WO2016191371A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10256093B2 (en) * 2015-11-30 2019-04-09 Alliance For Sustainable Energy, Llc Selective area growth of semiconductors using patterned sol-gel materials
US10366884B1 (en) * 2018-11-08 2019-07-30 Stratio Methods for forming a germanium island using selective epitaxial growth and a sacrificial filling layer
KR102763596B1 (ko) 2019-03-25 2025-02-10 삼성전자주식회사 반도체 소자
FR3128819B1 (fr) * 2021-11-02 2023-09-22 Commissariat Energie Atomique Procédé de traitement de surface

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910164A (en) * 1988-07-27 1990-03-20 Texas Instruments Incorporated Method of making planarized heterostructures using selective epitaxial growth
JPH04188719A (ja) * 1990-11-21 1992-07-07 Mitsubishi Electric Corp 選択埋込み成長法
JPH0521357A (ja) * 1991-07-10 1993-01-29 Fujitsu Ltd 半導体装置の製造方法
JPH08203833A (ja) * 1995-01-20 1996-08-09 Hitachi Ltd 半導体装置の製造方法
US5981400A (en) * 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
US8278176B2 (en) * 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
KR20110102293A (ko) * 2008-11-28 2011-09-16 스미또모 가가꾸 가부시키가이샤 반도체 기판의 제조 방법, 반도체 기판, 전자 디바이스의 제조 방법, 및 반응 장치
SG169921A1 (en) * 2009-09-18 2011-04-29 Taiwan Semiconductor Mfg Improved fabrication and structures of crystalline material
JP2011108692A (ja) * 2009-11-12 2011-06-02 Ulvac Japan Ltd Ｃｍｏｓデバイス用シリコンウェハの製造方法
CN103367553B (zh) * 2012-03-28 2016-01-20 清华大学 外延衬底的制备方法
JP5931780B2 (ja) * 2013-03-06 2016-06-08 東京エレクトロン株式会社 選択エピタキシャル成長法および成膜装置
JP2014181170A (ja) * 2013-03-21 2014-09-29 Mitsubishi Chemicals Corp 半導体バルク結晶および半導体バルク結晶の製造方法

Also Published As

Publication number Publication date
CN106663598A (zh) 2017-05-10
JP6787786B2 (ja) 2020-11-18
KR20180029091A (ko) 2018-03-19
WO2016191371A1 (en) 2016-12-01
US9378950B1 (en) 2016-06-28
EP3111466A4 (en) 2017-03-29
EP3608944A1 (en) 2020-02-12
JP2018515904A (ja) 2018-06-14
CN106663598B (zh) 2018-08-07
KR102424567B1 (ko) 2022-07-25
EP3111466A1 (en) 2017-01-04

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