KR20170026823A - Color conversion panel, display device including the same and manufacturing method of the color conversion panel - Google Patents

Abstract

According to an embodiment of the present invention, a color conversion panel includes: a first insulating substrate; a first color conversion medium layer, a second color conversion medium layer, and a third color conversion medium disposed on the first insulating substrate and emitting light of different colors; a light shielding member disposed between the first color conversion medium, the second color conversion medium, and the third color conversion medium; a blue light cutting filter disposed on the first insulating substrate and overlapping the first color conversion medium and the second color conversion medium; and a bandpass filter disposed on the first color conversion medium, the second color conversion medium, the third color conversion medium and the light shielding member. So, color purity can be improved by preventing the color blending of the color conversion panel.

Description

TECHNICAL FIELD [0001] The present invention relates to a color conversion panel, a display device including the color conversion panel, and a manufacturing method of the color conversion panel. [0002]

The present invention relates to a color conversion panel, a display device including the same, and a manufacturing method of the color conversion panel.

The liquid crystal display device is one of the most widely used flat panel display devices and is composed of two display panels having an electric field generating electrode such as a pixel electrode and a common electrode and a liquid crystal layer interposed therebetween.

A voltage is applied to the electric field generating electrode to generate an electric field in the liquid crystal layer, thereby determining the orientation of the liquid crystal molecules in the liquid crystal layer and controlling the polarization of the incident light to display an image.

However, in such a liquid crystal display device, since a light loss occurs in a polarizing plate and a color filter, in order to reduce such light loss and realize a liquid crystal display device of high efficiency, a PL-liquid crystal display device including a color- Have been proposed.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a color conversion panel and a display device with improved color purity by preventing color mixing of a color conversion panel.

It is another object of the present invention to provide a method of manufacturing a color conversion panel that can simplify the manufacturing process of the color conversion panel and reduce cost and time.

According to an aspect of the present invention, there is provided a light emitting device including a first insulating substrate, a first color conversion medium layer disposed on the first insulating substrate and emitting light of different colors, And a third color conversion medium, a light shielding member positioned between adjacent color conversion media of the first color conversion medium, the second color conversion medium and the third color conversion medium, A blue light cutting filter located between the substrate and the color conversion medium layer and overlaid with the first color conversion medium and the second color conversion medium; and a second color conversion medium layer, The third color conversion medium layer, and the band-pass filter located on the light-shielding member.

The blue light cutting filter and the band pass filter may be a single layer containing at least two kinds of inorganic substances having different refractive indices or a plurality of layers in which the two or more kinds of inorganic substances are laminated.

The inorganic material may include SiOx and SiNx.

The blue light cutting filter may be a plurality of layers in which 3 to 20 layers are stacked, and the band pass filter may be a plurality of layers in which 20 to 40 layers are stacked.

The uppermost and lowermost layers of the blue light cutting filter comprise SiOx, and the top and bottom layers of the bandpass filter may comprise SiNx.

The thickness of each of the blue light cutting filter and the band pass filter may be 1 to 10 탆.

According to another embodiment of the present invention, there is provided a display device including a display panel and a color conversion panel disposed on the display panel, wherein the color conversion panel includes a band-pass filter positioned on the display panel, A first color conversion medium layer, a second color conversion medium layer, and a third color conversion medium layer, the first color conversion medium layer and the third color conversion medium layer emitting light of different colors, A first color conversion medium layer, a second color conversion medium layer, a third color conversion layer, and a first insulation layer located on the light shielding member, the light shielding member being positioned between adjacent color conversion medium layers of the conversion medium, And a blue light cutting filter disposed between the color conversion medium layer and the first insulating substrate and overlapping the first color conversion medium layer and the second color conversion medium layer.

The display panel may include a thin film transistor located on the second insulating substrate, and a pixel electrode connected to the thin film transistor.

A third insulating substrate facing away from the second insulating substrate, a common electrode positioned on the third insulating substrate, and a liquid crystal layer disposed between the pixel electrode and the common electrode.

And a liquid crystal layer filling the fine space. The liquid crystal display device according to any one of claims 1 to 3, wherein the first insulating substrate and the second insulating substrate are made of the same material. have.

An organic light emitting member disposed on the pixel electrode, and a common electrode formed on the organic light emitting member.

According to another embodiment of the present invention, there is provided a method of manufacturing a light emitting device, comprising: forming a light shielding member on a first insulating substrate; forming a blue light cutting filter on the first insulating substrate; Layer, a second color conversion medium layer, and a third color conversion medium layer, and sequentially forming the first color conversion medium layer, the second color conversion medium layer, the third color conversion medium layer, And forming a band-pass filter on the entire surface of the first insulating substrate, wherein the blue light cutting filter includes a first color conversion medium layer and a second color conversion medium layer, .

As described above, the color conversion panel and the display device including the color conversion panel according to the embodiment of the present invention can prevent the color conversion of the color conversion panel, and thus the color purity can be improved.

In addition, according to the method of manufacturing a color conversion panel according to an embodiment of the present invention, the manufacturing process of the color conversion panel is simplified, and cost and time can be reduced.

1 is a cross-sectional view of a color conversion panel according to an embodiment of the present invention.
2 is a schematic cross-sectional view of a display device according to an embodiment of the present invention.
3 is a plan view of a plurality of pixels in a liquid crystal display device according to an embodiment of the present invention.
4 is a sectional view taken along the line IV-IV in Fig.
5 is a plan view of a plurality of pixels in a liquid crystal display according to an embodiment of the present invention.
6 is a cross-sectional view taken along the line VI-VI of FIG.
7 is a plan view of a plurality of pixels in an OLED display according to an exemplary embodiment of the present invention.
8 is a cross-sectional view taken along line VIII-VIII of FIG.
9 to 11 are cross-sectional views sequentially illustrating the manufacturing process of the color conversion panel according to the embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which: FIG. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. It will be understood that when an element such as a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the element directly over another element, Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

Hereinafter, a color conversion panel according to an embodiment of the present invention will be described in detail with reference to FIG.

1 is a cross-sectional view of a color conversion panel according to an embodiment of the present invention.

As shown in FIG. 1, the color conversion panel 30 includes a blue cut filter 322 located on the first insulating substrate 310. The blue light cutting filter 322 may overlap the first color conversion medium layer 340R and the second color conversion medium layer 340G.

The blue light cutting filter 322 may be located under the first color conversion medium layer 340R and the second color conversion medium layer 340G, respectively. That is, the blue light cutting filter 322 overlapping the first color conversion medium layer 340R and the blue light cutting filter 322 overlapping the second color conversion medium layer 340G may be formed independently of each other.

The blue light cutting filter 322 passes blue light emitted from the backlight assembly 500 described in FIG. 3 through the first color conversion medium layer 340R and the second color conversion medium layer 340G to form red (R) and blue It is possible to prevent color mixing from occurring in the process of implementing the color of green (G).

That is, since the blue light cutting filter 322 absorbs light in a wavelength range of 400 to 500 nm, blue light having a wavelength range of 400 to 500 nm can be blocked. At this time, the transmittance of the blue light cutting filter 322 may be 5% or less at a wavelength of 450 nm, 80% or more at 535 nm, and 90% or more at 650 nm.

The blue light cutting filter 322 may include an inorganic material having a high refractive index and a low refractive index in a single layer and may be formed of a plurality of layers in which an inorganic material having a high refractive index and a low refractive index are repeatedly laminated. When the blue light cutting filter 322 is formed as a plurality of layers, the blue light cutting filter 322 may be stacked in three to twenty layers.

The total thickness of the blue light cutting filter 322 may be 1 to 10 탆, and more preferably 1 to 3 탆. This is because if the blue light cutting filter 322 is less than 1 탆, the blocking effect of the blue light generated from the backlight assembly may be insufficient, and if it exceeds 10 탆, the thickness of the blue light cutting filter 322 may become too thick, .

The uppermost layer and the lowermost layer of the blue light cutting filter 322 may include SiOx and SiNx as inorganic materials having a high refractive index and a low refractive index of the blue light cutting filter 322. When the blue light cutting filter 322 is formed of a plurality of layers, For example, any one of BiO ₂ , ZnO, and Ce ₂ O ₃ and any one of CaCO ₃ , ZrO ₂ , TiO ₂ , and Ar ₂ O _{3 may be used} . And the like.

Next, first to third color conversion mediation layers 340R, 340G and 340B are disposed on the first insulating substrate 310 and the blue light cutting filter 322, respectively.

Wherein the first color conversion medium layer 340R may be a red conversion medium layer, the second color conversion medium layer 340G may be a green conversion medium layer, and the third color conversion medium layer 340B may be a blue conversion medium layer But is not limited thereto.

The first color conversion medium layer 340R can convert the blue light supplied from the backlight assembly into red. A first color conversion parameter layer (340R) may include a red phosphor, a red phosphor (Ca, Sr, Ba) S , (Ca, Sr, Ba) 2 Si 5 N 8, kajeun (CaAlSiN _3), CaMoO ₄ , and Eu ₂ Si ₅ N ₈ .

The second color conversion medium layer 340G can convert the blue light supplied from the backlight assembly to green. Second color conversion medium layer (340G) may include a green phosphor, the green phosphor is yttrium aluminum garnet (yttrium aluminum garnet, YAG), (Ca, Sr, Ba) ₂ SiO _4, SrGa ₂ S _4, BAM , alpha-siAlON (α-siAlON), sialon between the beta _{(β-siAlON), Ca 3} Sc 2 Si 3 O 12, Tb 3 Al 5 O 12, BaSiO 4, CaAlSiON, (Sr 1 - x Ba x) Si 2 O ₂ N ₂ , and x may be any number between 0 and 1.

In addition, the first color conversion medium layer 340R and the second color conversion medium layer 340G may include a quantum dot for converting color. The Quantum Dot may be selected from Group II-VI compounds, Group IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.

The II-VI compound may be selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; A trivalent element selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, Small compounds; And a silane compound selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof. The III-V compound is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; A trivalent compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP and mixtures thereof; And a photonic compound selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof. Group IV-VI compounds are selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; A triple compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; And a silane compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. Group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof. The IV group compound may be the element compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

At this time, the elemental compound, the trivalent compound or the silane compound may be present in the particle at a uniform concentration, or may be present in the same particle by dividing the concentration distribution into a partially different state. In addition, one quantum dot may have a core / shell structure surrounding other quantum dots. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell becomes lower toward the center.

The quantum dot may have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, more preferably about 30 nm or less. In this range, color purity and color reproducibility can be improved. In addition, since light emitted through the quantum dot is emitted in all directions, a wide viewing angle can be improved.

In addition, the form of the quantum dot is not limited to a specific type commonly used in the art, but may be a spherical, pyramidal, multi-arm, or cubic nanoparticle, , Nanowires, nanofibers, nano-sized particles, and the like can be used.

The third color conversion medium layer 340B may be formed of a transparent polymer, and the blue light supplied from the backlight assembly is transmitted as it is and exhibits a blue color. And the third color conversion medium layer 340B corresponding to the blue light exiting area may include a separate phosphor or a material that emits blue light incident without a quantum dot.

The third color conversion medium layer (340B) is, but may include at least any one or more of the polymer and TiO _2, such as a photosensitive resin, and the like.

The first light blocking member 372 may be positioned between the first to third color conversion media 340R, 340G, and 340B.

The first light blocking member 372 defines an area where the first color conversion medium layer 340R, the second color conversion medium layer 340G and the third color conversion medium layer 340B are disposed, The layer 340R, the second color conversion medium layer 340G and the third color conversion medium layer 340B are located between the first light blocking members 372. [ The first light blocking member 372 serves to prevent the color mixture occurring between adjacent color conversion media 340R, 304G, and 340B.

Here, the blue light cutting filter 322 is not formed under the first light blocking member 372 of the color conversion panel according to the present embodiment.

This is because the blue light cutting filter 322 has a high reflectance of the external light so that the blue light cutting filter 322 is not formed in the region where the first light blocking member 372 is located, The external light reflectance can be reduced.

Next, the band-pass filter 350 is located on the first to third color conversion media layers 340R, 340G, 340B. The bandpass filter 350 overlies the first to third color conversion media 340R, 340G and 340B and is also located on the light shielding member 372 exposed between the color conversion media 340R, 340G and 340B.

That is, the band-pass filter 350 is located on the front surface of the first insulating substrate 310.

The bandpass filter 350 may reflect light diverging in multiple directions in the backlight assembly to the front to improve the light efficiency and the color gamut.

The band-pass filter 350 may include an inorganic material having a high refractive index and a low refractive index in a single layer, and may be formed of a plurality of layers in which an inorganic material having a high refractive index and a low refractive index are repeatedly laminated. When the band-pass filter 350 is formed as a plurality of layers, the band-pass filter 350 may be stacked in a layer of 20 to 40 layers.

The total thickness of the bandpass filter 350 may be between 1 and 10 탆, and more preferably between 1 and 3 탆. This is because when the band-pass filter 350 is less than 1 탆, the light efficiency and color reproduction ratio improvement effect may be insufficient, and when the band-pass filter 350 is more than 10 탆, the thickness becomes too thick and light transmittance may decrease.

SiOx and SiNx as inorganic substances having a high refractive index and a low refractive index of the band-pass filter 350, and the uppermost layer and the lowermost layer when the band-pass filter 350 is formed of a plurality of layers may be SiNx.

Hereinafter, a display device according to an embodiment of the present invention will be schematically described with reference to FIG.

2 is a schematic cross-sectional view of a display device according to an embodiment of the present invention.

Referring to FIG. 2, a display device according to an embodiment of the present invention includes a color conversion panel 30, a display panel 10, and a light assembly 500 . The color conversion panel 30 included in the display device according to the embodiment of the present invention is the same as the color conversion panel 30 according to the embodiment of FIG. 1 described above, and a duplicate description will be omitted.

The display panel 10 positioned on the back surface of the color conversion panel 30 may include a liquid crystal panel 50 representing an image and polarizers 12 and 22 located on both surfaces of the liquid crystal panel 50. [ That is, the first polarizing plate 12 and the second polarizing plate 22 for polarizing light incident from the backlight assembly 500 are positioned on both sides of the liquid crystal panel 50. The first polarizing plate 12 may face the backlight assembly 500 and the second polarizing plate 22 may face or contact the color conversion panel 30.

The backlight assembly 500 is disposed on the back surface of the first polarizer 12 and includes a light source for generating light and a light guide plate for guiding the received light toward the display panel 10 and the color conversion panel 30 ). ≪ / RTI >

By way of example, the backlight assembly 500 may include at least one light emitting diode, which may be a blue light emitting diode or a UV light source. The light source according to an embodiment of the present invention may be an edge type backlight assembly disposed on at least one side surface of the light guide plate, or may be a direct type where the light source of the backlight assembly 500 is positioned below the light guide plate (not shown) The position of the light source can be variously formed.

Hereinafter, a liquid crystal display device, which is one embodiment of the display panel 10 described above with reference to FIGS. 3 to 4, will be described in detail. FIG.

FIG. 3 is a plan view of a plurality of pixels in a liquid crystal display device according to an exemplary embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along the line IV-IV in FIG.

The color conversion panel 30 shown in Figs. 3 to 4 is the same as the color conversion panel 30 according to the embodiment of Fig. 1 described above, and a duplicate description will be omitted.

The liquid crystal panel 50 located on the backside of the color conversion panel 30 faces the lower panel 100 and the lower panel 100 including the TFT and the second insulating substrate 110 to display an image, 3 includes an upper panel 200 including an insulating substrate 210 and a liquid crystal layer 3 interposed between the lower panel 100 and the upper panel 200.

The first and second polarizers 12 and 22 are disposed on both sides of the liquid crystal panel 50. The polarizers 12 and 22 may be formed of at least one of a coating type polarizer and a wire grid polarizer . The polarizing plates 12 and 22 may be positioned on one side of the upper panel 200 in various forms such as a film form, a coating form, and an attachment form.

A plurality of pixel electrodes 191 are disposed in a matrix form on the second insulating substrate 110 included in the lower panel 100.

On the second insulating substrate 110 are formed a gate line 121 extending in the row direction and including the gate electrode 124, a gate insulating film 140 positioned on the gate line 121, a semiconductor A data line 171 and a drain electrode 175 and a data line 171 and a drain electrode 175 that are positioned on the semiconductor layer 154 and extend in the column direction and include the source electrode 173, The pixel electrode 191 is physically and electrically connected to the drain electrode 175 through the protective film 180 and the contact hole 185 located above the pixel electrode 191.

The semiconductor layer 154 located on the gate electrode 124 forms a channel layer in the region exposed by the source electrode 173 and the drain electrode 175 and the gate electrode 124, the semiconductor layer 154, The electrode 173 and the drain electrode 175 form one thin film transistor.

The second light blocking member 220 is disposed on the third insulating substrate 210 facing the second insulating substrate 110. On the second light shielding member 220, a flat film 250 providing a flat surface may be positioned on which the common electrode 270 is located. In accordance with an embodiment of the invention, the flat film 250 may be omitted. The common electrode 270 may be formed on the lower panel 100.

The common electrode 270 receiving the common voltage forms an electric field with the pixel electrode 191 to arrange the liquid crystal molecules 31 located in the liquid crystal layer 3.

The liquid crystal layer 3 includes a plurality of liquid crystal molecules 31 and the alignment direction of the liquid crystal molecules 31 is controlled by the electric field between the pixel electrode 191 and the common electrode 270. The image can be displayed by controlling the transmittance of the light received from the backlight assembly 500 according to the arrangement of the liquid crystal molecules.

The color conversion panel 30 is disposed such that the band pass filter 350 of the color conversion panel 30 faces the third insulation substrate 210 of the display panel 10. [

The liquid crystal display device according to an embodiment of the present invention can enhance the light emission rate and the color reproducibility through the color conversion panel located on the display panel.

Hereinafter, a liquid crystal display device, which is one embodiment of the above-described display panel 10, will be described in detail with reference to FIGS. 5 to 6. FIG.

FIG. 5 is a plan view of a plurality of pixels in a liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 6 is a cross-sectional view taken along line VI-VI of FIG.

The color conversion panel 30 shown in Figs. 5 to 6 is the same as the color conversion panel 30 according to the embodiment of Fig. 1 described above, and a duplicated description will be omitted.

Referring to FIGS. 5 and 6, the liquid crystal display according to an embodiment of the present invention includes a display panel 10, a color conversion panel 30, and a backlight assembly 500. The display panel 10 may be positioned on the backlight assembly 500 and the color conversion panel 30 may be positioned on the display panel 10. [

The display panel 10 according to an embodiment of the present invention may include a liquid crystal panel 50 and first and second polarizers 12 and 22 located on both sides of the liquid crystal panel 50. [ At this time, at least one of a polarizer and a wire grid polarizer may be used for the polarizers 12 and 22. The polarizers 12 and 22 may be formed by various methods such as film form, (Not shown).

The liquid crystal panel 50 includes a plurality of gate conductors including a plurality of gate lines 121, a plurality of depression gate lines 123 and a plurality of sustain electrode lines 131 located on the second insulating substrate 110 do.

The gate line 121 and the decompression gate line 123 extend mainly in the lateral direction and transfer gate signals. The gate conductor further includes a first gate electrode 124h and a second gate electrode 124l projecting upward and downward from the gate line 121. A third gate electrode 124c protruding upward from the depression gate line 123 ). The first gate electrode 124h and the second gate electrode 124l are connected to each other to form one protrusion. At this time, the projecting shapes of the first, second, and third gate electrodes 124h, 124l, and 124c can be changed.

The sustain electrode line 131 also extends in the lateral direction mainly and delivers a predetermined voltage such as the common voltage Vcom. The sustain electrode line 131 includes a sustain electrode 129 protruding upward and downward, a pair of vertical portions 134 extending downward substantially perpendicular to the gate line 121, and a pair of vertical portions 134 And includes transverse portions 127 that connect to each other. The lateral portion 127 includes a downwardly extending capacitance electrode 137.

A gate insulating layer 140 is disposed on the gate conductors 121, 123, 124h, 124l, 124c, The gate insulating layer 140 may be formed of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or the like. In addition, the gate insulating film 140 may be composed of a single film or a multi-film.

A first semiconductor layer 154h, a second semiconductor layer 154l, and a third semiconductor layer 154c are disposed on the gate insulating layer 140. [ The first semiconductor layer 154h may be located above the first gate electrode 124h and the second semiconductor layer 154l may be above the second gate electrode 124l and the third semiconductor layer 154c May be located above the third gate electrode 124c. The first semiconductor layer 154h and the second semiconductor layer 154l may be connected to each other and the second semiconductor layer 154l and the third semiconductor layer 154c may be connected to each other. In addition, the first semiconductor layer 154h may extend to a position below the data line 171. [ The first to third semiconductor layers 154h, 154l and 154c may be formed of amorphous silicon, polycrystalline silicon, metal oxide, or the like.

An ohmic contact (not shown) may further be disposed on the first to third semiconductor layers 154h, 154l, and 154c, respectively. The resistive contact member may be made of a silicide or a material such as n + hydrogenated amorphous silicon which is heavily doped with n-type impurities.

A data line 171, a first source electrode 173h, a second source electrode 173l, a third source electrode 173c, and a data line 173b are formed on the first to third semiconductor layers 154h, A data conductor including one drain electrode 175h, a second drain electrode 1751, and a third drain electrode 175c is located.

The data line 171 transmits the data signal and extends mainly in the vertical direction and crosses the gate line 121 and the decompression gate line 123. Each data line 171 includes a first source electrode 173h and a second source electrode 173l that extend toward the first gate electrode 124h and the second gate electrode 124l and are connected to each other.

The first drain electrode 175h, the second drain electrode 1751, and the third drain electrode 175c include a wide one end and a rod-shaped other end. The rod-shaped end portions of the first drain electrode 175h and the second drain electrode 175l are partially surrounded by the first source electrode 173h and the second source electrode 173l. The wide one end of the second drain electrode 1751 extends again to form a third source electrode 173c bent in a U-shape. The wide end portion 177c of the third drain electrode 175c overlaps with the capacitor electrode 137 to form a reduced-pressure capacitor Cstd and the rod-end portion is partially surrounded by the third source electrode 173c.

The first gate electrode 124h, the first source electrode 173h and the first drain electrode 175h together with the first semiconductor layer 154h form the first thin film transistor Qh and the second gate electrode The second source electrode 173l and the second drain electrode 175l form a second thin film transistor Q1 together with the second semiconductor layer 154l and the third gate electrode 124c, The source electrode 173c and the third drain electrode 175c together with the third semiconductor layer 154c form a third thin film transistor Qc.

The first semiconductor layer 154h, the second semiconductor layer 154l and the third semiconductor layer 154c may be connected to form a linear shape and the source electrodes 173h, 173l and 173c and the drain electrodes 175h and 175l 173h, 173l, 173c, 175h, 175l, 175c, and the underlying resistive contact member, except for the channel region between the data conductors 171, 173h, 173l, 175c.

The first semiconductor layer 154h has a portion exposed between the first source electrode 173h and the first drain electrode 175h without being blocked by the first source electrode 173h and the first drain electrode 175h, The second semiconductor layer 154l has a portion exposed between the second source electrode 173l and the second drain electrode 175l without being blocked by the second source electrode 173l and the second drain electrode 175l, The third semiconductor layer 154c is exposed between the third source electrode 173c and the third drain electrode 175c without being blocked by the third source electrode 173c and the third drain electrode 175c.

The semiconductor layers 154h, 154l, and 154l exposed between the data conductors 171, 173h, 173l, 173c, 175h, 175l, and 175c and the respective source electrodes 173h, 173l, and 173c and the drain electrodes 175h, And 154c, a protective film 180 is disposed. The passivation layer 180 may be formed of an organic insulating material or an inorganic insulating material, and may be formed of a single layer or a multi-layer.

The second light blocking member 220 is disposed on the protection film 180. The second light blocking member 220 may be formed on the boundary of the pixel region PX and the thin film transistor to prevent light leakage.

The first insulating layer 240 may be disposed on the second light blocking member 220. The first insulating layer 240 may be formed of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon nitride oxide (SiOxNy), or the like. The first insulating layer 240 protects the light shielding member 220 made of an organic material and may be omitted if necessary.

The first insulating layer 240, the second light shielding member 220 and the passivation layer 180 are formed with a plurality of members for exposing the wide end portion of the first drain electrode 175h and the wide end portion of the second drain electrode 175l, 1 contact hole 185h and a plurality of second contact holes 185l are formed.

The pixel electrode 191 is located on the first insulating layer 240. The pixel electrode 191 may be formed of a transparent metal material such as indium tin oxide (ITO), indium zinc oxide (IZO), or the like.

The pixel electrodes 191 are separated from each other with the gate line 121 and the decompression gate line 123 sandwiched therebetween and are disposed above and below the pixel region PX around the gate line 121 and the decompression gate line 123 And includes a first sub-pixel electrode 191h and a second sub-pixel electrode 191l arranged in a column direction. That is, the first sub-pixel electrode 191h and the second sub-pixel electrode 191l are separated with the liquid crystal inlet region V1 therebetween, and the first sub-pixel electrode 191h is divided into the first sub-pixel region PXa , And the second sub-pixel electrode 191l is located in the second sub-pixel region PXb.

The first sub-pixel electrode 191h and the second sub-pixel electrode 191l are connected to the first drain electrode 175h and the second drain electrode 175l through the first contact hole 185h and the second contact hole 185l, ). Therefore, when the first thin film transistor Qh and the second thin film transistor Q1 are in the ON state, the data voltage is applied from the first drain electrode 175h and the second drain electrode 175l.

The first sub-pixel electrode 191h and the second sub-pixel electrode 191l are rectangular in shape and each of the first sub-pixel electrode 191h and the second sub-pixel electrode 191l has a lateral stripe portion 193h, 193l And a vertical stem portion 192h, 192l intersecting the horizontal stem portion 193h, 193l. The first sub-pixel electrode 191h and the second sub-pixel electrode 191l are protruded upward or downward from the edges of the plurality of fine branch portions 194h and 194l and the sub-pixel electrodes 191h and 191l, respectively. (197h, 1971).

The pixel electrode 191 is divided into four sub-regions by the horizontal line bases 193h and 193l and the vertical line bases 192h and 192l. The fine branch portions 194h and 1941 extend obliquely from the transverse trunk portions 193h and 193l and the trunk base portions 192h and 192l and extend in the direction of the gate line 121 or the transverse trunk portions 193h and 193l An angle of about 45 degrees or 135 degrees can be achieved. Also, the directions in which the fine branch portions 194h and 194l of the neighboring two sub-regions extend may be orthogonal to each other.

The arrangement of the pixel region, the structure of the thin film transistor, and the shape of the pixel electrode described above are only examples, and the present invention is not limited thereto and various modifications are possible. Also, the protective layer and the insulating layer described above are not limited thereto and may be omitted or added.

Next, the common electrode 270 is spaced apart from the pixel electrode 191 by a predetermined distance. A microcavity 305 is formed between the pixel electrode 191 and the common electrode 270. The width and the width of the fine space 305 can be variously changed according to the size and resolution of the display device.

The common electrode 270 may be formed of a transparent metal material such as indium tin oxide (ITO), indium zinc oxide (IZO), or the like. A constant voltage may be applied to the common electrode 270 and an electric field may be formed between the pixel electrode 191 and the common electrode 270.

The first alignment layer 11 is located on the pixel electrode 191. The second alignment layer 21 is located under the common electrode 270 so as to face the first alignment layer 11.

The first alignment layer 11 and the second alignment layer 21 may be formed of a vertical alignment layer and may be formed of an alignment material such as polyamic acid, polysiloxane, or polyimide. The first and second alignment films 11 and 21 may be connected to each other at the edge of the pixel region PX.

A liquid crystal layer composed of the liquid crystal molecules 31 is located in the fine space 305 located between the pixel electrode 191 and the common electrode 270. The liquid crystal molecules 31 may have a negative dielectric anisotropy or a positive dielectric anisotropy and may stand in a direction perpendicular to the second insulating substrate 110 in a state where no electric field is applied. That is, vertical orientation can be achieved.

The first sub-pixel electrode 191h and the second sub-pixel electrode 191l to which the data voltage is applied are formed in the micro space 305 between the two electrodes 191 and 270 by generating an electric field together with the common electrode 270 And the direction of the liquid crystal molecules 31 is determined. The luminance of the light passing through the liquid crystal layer varies depending on the direction of the liquid crystal molecules 31 thus determined.

A roof layer 370 is located on the common electrode 270. The roof layer 370 may be made of an organic material. A fine space 305 is formed under the roof layer 370 and the roof layer 370 is hardened by the hardening process to maintain the shape of the fine space 305. That is, the roof layer 370 is formed so as to be spaced apart from the pixel electrode 191 and the fine space 305.

The roof layer 370 is formed in each pixel region PX and the partition wall portion V2 along the pixel row and is not formed in the liquid crystal injection hole formation region V1. That is, the roof layer 370 is not formed between the first sub-pixel region PXa and the second sub-pixel region PXb. In each of the first sub-pixel region PXa and the second sub-pixel region PXb, a fine space 305 is formed under each of the roof layers 370. In the partition wall portion V2, the micro space 305 is not formed under the roof layer 370, and the roof layer 370 protrudes downward to form the partition wall portion V2, It is possible to partition the neighboring micro-spaces. Therefore, the thickness of the roof layer 370 located in the partition wall V2 is formed thicker than the thickness of the roof layer 370 located in each of the first sub-pixel region PXa and the second sub-pixel region PXb . The upper surface and both side surfaces of the fine space 305 are covered by the roof layer 370.

The common electrode 270 and the roof layer 370 are formed with an inlet portion 307 for exposing a part of the fine space 305. The entrance portion 307 may be formed to face the edges of the first sub-pixel region PXa and the second sub-pixel region PXb. That is, the entrance portion 307 may be formed to expose the side surface of the micro-space 305 corresponding to the lower side of the first sub-pixel region PXa and the upper side of the second sub-pixel region PXb. Since the fine space 305 is exposed by the inlet 307, the alignment liquid or the liquid crystal material can be injected into the fine space 305 through the inlet 307.

A cover layer 390 may be located on top of the roof layer 370. The cover layer 390 is formed so as to cover the entrance portion 307 formed in the liquid crystal injection hole formation region V1 into which the liquid crystal material and the alignment material are injected. That is, the cover layer 390 can seal the fine space 305 so that the liquid crystal molecules 31 formed in the fine space 305 do not protrude to the outside. The cover layer 390 is brought into contact with the liquid crystal molecules 31 and thus can be formed of a material which does not react with the liquid crystal molecules 31.

The cover layer 390 may be composed of multiple membranes, such as double membranes, triple membranes, and the like. The bilayer consists of two layers of different materials. The triple layer consists of three layers, and the materials of the adjacent layers are different from each other. For example, the cover layer 390 may comprise a layer of an organic insulating material and a layer of an inorganic insulating material.

The color conversion panel 30 is arranged so that the band pass filter 350 of the color conversion panel 30 faces the cover layer 390 of the display panel 10. [

The display device according to an embodiment of the present invention as described above can improve the luminous efficiency and the color reproducibility to provide excellent display quality.

Hereinafter, an organic light emitting diode display according to an embodiment of the display panel 10 will be described in detail with reference to FIGS. 7 to 8. FIG.

FIG. 7 is a plan view of a plurality of pixels in an OLED display according to an embodiment of the present invention, and FIG. 8 is a cross-sectional view taken along line VIII-VIII of FIG.

The color conversion panel 30 shown in FIGS. 7 to 8 is the same as the color conversion panel 30 according to the embodiment of FIG. 1 described above,

7 and 8, a plurality of gate lines 121 and a plurality of second gate electrodes 124b including a first gate electrode (control electrode) 124a are formed on a second insulating substrate 110 A plurality of gate conductors are formed.

The gate line 121 transmits the gate signal and extends mainly in the horizontal direction.

The first gate electrode 124a extends upward from the gate line 121 and the second gate electrode 124b is separated from the gate line 121. The first gate electrode 124a extends downward, And a storage electrode 127 extending long.

The gate conductors 121, 124a and 124b may be formed of a metal such as aluminum (Al) or an aluminum alloy, a metal such as silver (Ag) or a silver alloy, a copper metal such as copper or copper alloy, a molybdenum ), A molybdenum-based metal such as a molybdenum alloy, chromium (Cr), tantalum (Ta), and titanium (Ti). However, they may have a multi-film structure including two conductive films (not shown) having different physical properties.

A gate insulating layer 140 made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed on the gate conductors 121, 124a, and 124b.

A plurality of first and second semiconductors 154a and 154b made of hydrogenated amorphous silicon (amorphous silicon is abbreviated as a-Si) or polycrystalline silicon (polysilicon) are formed on the gate insulating layer 140 have. The first and second semiconductors 154a and 154b are located above the first and second gate electrodes 124a and 124b, respectively.

A plurality of pairs of ohmic contacts 163 and 165 are formed on the first and second semiconductors 154a and 154b, respectively. The resistive contact members 163 and 165 may be made of a material such as n + hydrogenated amorphous silicon, or may be made of silicide, which is heavily doped with phosphorous n-type impurities.

A plurality of data lines 171, a plurality of driving voltage lines 172 and a plurality of first and second drain electrodes 175a and 175b are formed on the resistive contact members 163 and 165 and the gate insulating layer 140, A plurality of data conductors are formed.

The data line 171 transmits a data signal and extends mainly in the vertical direction and crosses the gate line 121. Each data line 171 includes a plurality of first source electrodes 173a extending toward the first gate electrode 124a.

The driving voltage line 172 transmits the driving voltage and extends mainly in the vertical direction and crosses the gate line 121. Each of the driving voltage lines 172 includes a plurality of second source electrodes 173b extending toward the second gate electrode 124b. The driving voltage line 172 overlaps with the sustain electrode 127 and can be connected to each other.

The first and second drain electrodes 175a and 175b are separated from each other and are separated from the data line 171 and the driving voltage line 172. [ The first source electrode 173a and the first drain electrode 175a face each other with the first gate electrode 124a as the center and the second source electrode 173b and the second drain electrode 175b face the second gate electrode 124a. (124b).

The data conductors 171, 172, 173a, 173b, 175a and 175b are preferably made of a refractory metal such as molybdenum, chromium, tantalum and titanium, or an alloy thereof and may be made of a refractory metal film Film structure including a film (not shown).

Semiconductors 154a and 154b have exposed portions between source electrodes 173a and 173b and drain electrodes 175a and 175b.

A passivation layer 180 is formed on the data conductors 171, 172, 173a, 173b, 175a, and 175b and exposed semiconductor portions 154a and 154b. The protective film 180 is made of an inorganic insulating material such as silicon nitride or silicon oxide, an organic insulating material, or a low dielectric constant insulating material.

A plurality of contact holes 185a and 185b are formed in the passivation layer 180 to expose the first and second drain electrodes 175a and 175b. The passivation layer 180 and the gate insulating layer 140 A contact hole 184 for exposing the two-gate electrode 124b is formed.

A plurality of pixel electrodes 191 and a plurality of connecting members 85 are formed on the passivation layer 180. These may be made of a transparent conductive material such as ITO or IZO, or a reflective metal such as aluminum, silver or an alloy thereof.

The pixel electrode 191 is physically and electrically connected to the second drain electrode 175b through the contact hole 185b and the connecting member 85 is electrically connected to the second gate electrode 124b And the first drain electrode 175a.

A partition 361 is formed on the passivation layer 180. The barrier rib 361 surrounds the edge of the pixel electrode 191 like a bank to define an opening 365 and is made of an organic insulating material or an inorganic insulating material. The barrier ribs 361 may also be made of a photoresist containing a black pigment, in which case the barrier ribs 361 may serve as light shielding members.

An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 191 defined by the barrier rib 361. The organic light emitting member 470 of the organic light emitting display according to the present embodiment is made of only an organic material that emits blue light.

In general organic light emitting displays, organic light emitting devices include organic materials that uniquely emit light of any one of primary colors such as red, green, and blue. However, in the organic light emitting display according to the present embodiment, The color conversion panel 30 may be positioned on the upper surface of the display device to display red, green, and blue colors, and thus may include only organic materials that emit blue light.

The organic light emitting member 470 may have a multi-layer structure including an auxiliary layer (not shown) for improving the light emitting efficiency of the light emitting layer in addition to a light emitting layer (not shown). The sub-layer includes an electron transport layer (not shown) and a hole transport layer (not shown) for balancing electrons and holes and an electron injection layer (not shown) for enhancing the injection of electrons and holes an electron injecting layer (not shown) and a hole injecting layer (not shown).

A common electrode 270 is formed on the organic light emitting member 470. The common electrode 270 is made of a transparent conductive material, such as ITO or IZO, or a reflective metal including Ca, Ba, Mg, Al, and silver.

In this organic light emitting display device, the first gate electrode 124a connected to the gate line 121, the first source electrode 173a connected to the data line 171, and the first drain electrode 175a are formed in the The switching thin film transistor Qs forms a switching channel Qs between the first source electrode 173a and the first drain electrode 175a and the channel between the first source electrode 173a and the first drain electrode 175a. 1 semiconductor 154a. A second gate electrode 124b connected to the first drain electrode 175a, a second source electrode 173b connected to the driving voltage line 172, and a second drain electrode connected to the pixel electrode 191 And the channel of the driving thin film transistor Qd is connected to the second source electrode 173b and the second drain electrode 175b And is formed on the second semiconductor 154b. The pixel electrode 191, the organic light emitting member 470 and the common electrode 270 constitute an organic light emitting diode. The pixel electrode 191 is an anode, the common electrode 270 is a cathode, The electrode 191 serves as the cathode, and the common electrode 270 serves as the anode. The sustain electrode 127 and the drive voltage line 172 overlapping each other constitute a storage capacitor Cst.

The organic light emitting display device may emit light upward or downward from the second insulating substrate 110 to display an image.

The color conversion panel 30 is disposed such that the band pass filter 350 of the color conversion panel 30 faces the common electrode 270 of the display panel 10. [

The organic light emitting diode display according to an embodiment of the present invention can improve the luminous efficiency and the color reproducibility, thereby providing excellent display quality.

Hereinafter, a method of manufacturing a color conversion panel according to an embodiment of the present invention will be described with reference to FIGS. 9 to 11. FIG.

9 to 11 are cross-sectional views sequentially illustrating the manufacturing process of the color conversion panel according to the embodiment of the present invention.

9, a first light blocking member 372 for partitioning first to third color conversion mediation layers 340R, 340G, and 340B is formed on a first insulating substrate 310 using a first mask .

Next, the blue light cutting material layer 322 is coated on the entire surface, and then a blue light cutting filter 322 is formed on the first insulating substrate 310 using a second mask.

The blue light cutting filter 322 is formed only in the region between the first light blocking members 372 after the first light blocking member 372 is formed first. That is, unlike the case where the blue light cutting filter 322 is first formed and then the first light blocking member 372 is formed, according to the manufacturing method of the present embodiment, a blue light cutting filter 322 are not formed.

The blue light cutting filter 322 has a high external light reflectance and the blue light cutting filter 322 is not formed in the region where the first light shielding member 372 is located so that the external light reflectance in the region where the first light shielding member 372 is located is .

At this time, the blue light cutting filter 322 is formed only at a position corresponding to the first color conversion medium layer 340R and the second color conversion medium layer 340G to be formed later, and the third color conversion medium layer 340B and It is not formed at the corresponding position.

10, a third color conversion medium layer 340B is formed at a position where the blue light cutting filter 322 is not formed by using the third mask, and the third color conversion medium layer 340B is formed by using the fourth and fifth masks A first color conversion medium layer 340R and a second color conversion medium layer 340G which are positioned on the blue light cutting filter 322 are sequentially formed.

The order of forming the first to third color conversion media 340R, 340G, and 340B may be variously modified.

Next, a band-pass filter 350 is formed on the first insulating substrate 310, the first light blocking member 372, and the first to third color conversion mediation layers 340R, 340G, and 340B as shown in FIG. So that the color conversion panel 30 according to the embodiment of the present invention can be completed.

As described above, in the method of manufacturing the color conversion panel according to the embodiment of the present invention, the color conversion panel is manufactured using the five-sheet mask, and the manufacturing process can be simplified, Time can be saved.

As described above, the color conversion panel and the display device including the color conversion panel according to an embodiment of the present invention can prevent the color conversion of the color conversion panel, thereby improving the color purity. In addition, According to the manufacturing method of the color conversion panel according to the present invention, the manufacturing process of the color conversion panel can be simplified and cost and time can be saved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of the right.

10: display panel 12, 22: polarizer
30: color conversion panel 310: first insulating substrate
11: first alignment film 21: second alignment film
110: second insulating substrate 121: gate line
124: gate electrode 131: sustain electrode line
140: gate insulating film 171: data line
191: pixel electrode 220: second light blocking member
390: cover film 270: common electrode
300: sacrificial layer 305: fine space 307: entrance part 31: liquid crystal molecule
10: display panel 30: color conversion panel
372: first light blocking member 310: first insulating substrate
210: third insulating substrate 470: organic light emitting member
340R, 340G, 340B: color conversion medium layer

Claims (20)

A first insulating substrate,
A first color conversion medium layer and a third color conversion medium layer disposed on the first insulating substrate and emitting light of different colors,
A light shielding member positioned between adjacent color conversion media of the first color conversion medium, the second color conversion medium and the third color conversion medium,
A blue light cutting filter positioned between the first insulating substrate and the color conversion medium layer and overlapping the first color conversion medium and the second color conversion medium,
And a bandpass filter located on the first color conversion medium, the second color conversion medium, the third color conversion medium and the light shielding member. The method of claim 1,
Wherein the blue light cutting filter and the band pass filter are a single layer including at least two kinds of inorganic materials having different refractive indices or a plurality of layers in which the two or more types of inorganic materials are laminated. 3. The method of claim 2,
Wherein the inorganic material comprises SiOx and SiNx. 4. The method of claim 3,
The blue light cutting filter is a plurality of layers in which 3 to 20 layers are stacked,
Wherein the band-pass filter is a plurality of layers in which 20 to 40 layers are stacked. 5. The method of claim 4,
Wherein the uppermost and lowermost layers of the blue light cutting filter comprise SiOx,
Wherein the uppermost layer and the lowermost layer of the band-pass filter comprise SiNx. The method of claim 5,
Wherein each of the blue light cutting filter and the band pass filter has a thickness of 1 to 10 占 퐉. Display panel, and
And a color conversion panel disposed on the display panel,
Wherein the color conversion panel comprises:
A band-pass filter disposed on the display panel,
A first color conversion medium layer and a third color conversion medium layer that emit light of different colors located on the band pass filter,
A light shielding member positioned between adjacent color conversion media of the first color conversion medium, the second color conversion medium and the third color conversion medium,
A first color conversion medium, a third color conversion, and a first insulation substrate located on the light shielding member;
And a blue light cutting filter located between the color conversion medium and the first insulating substrate and overlapping the first color conversion medium and the second color conversion medium. 8. The method of claim 7,
Wherein the blue light cutting filter and the band pass filter are a plurality of layers in which SiOx and SiNx are stacked. 9. The method of claim 8,
The blue light cutting filter is a plurality of layers in which 3 to 20 layers are stacked,
Wherein the band-pass filter is a plurality of layers in which 20 to 40 layers are stacked. The method of claim 9,
Wherein the uppermost and lowermost layers of the blue light cutting filter comprise SiOx,
Wherein the uppermost layer and the lowermost layer of the band-pass filter comprise SiNx. 8. The method of claim 7,
In the display panel,
A thin film transistor positioned on the second insulating substrate,
And a pixel electrode connected to the thin film transistor. 12. The method of claim 11,
A third insulating substrate facing away from the second insulating substrate,
A common electrode located on the third insulating substrate, and
And a liquid crystal layer disposed between the pixel electrode and the common electrode. 12. The method of claim 11,
A roof layer facing the second insulating substrate,
A common electrode located on the roof layer,
A fine space defined by the second insulating substrate and the roof layer, and
And a liquid crystal layer filling the fine space. 12. The method of claim 11,
An organic light emitting member disposed on the pixel electrode, and
And a common electrode formed on the organic light emitting member. Forming a light shielding member on the first insulating substrate,
Forming a blue light cutting filter on the first insulating substrate,
Sequentially forming a first color conversion medium layer, a second color conversion medium layer and a third color conversion medium layer located between the light shielding members, and
And forming a band-pass filter on the entire surface of the first insulating substrate including the first color conversion medium layer, the second color conversion medium layer, the third color conversion medium layer, and the light shielding member,
Wherein the blue light cutting filter overlaps the first color conversion medium layer and the second color conversion medium layer. 16. The method of claim 15,
Wherein the blue light cutting filter and the band pass filter are formed of a single layer containing at least two kinds of inorganic substances having different refractive indices or a plurality of layers in which the two or more kinds of inorganic substances are laminated. 17. The method of claim 16,
Wherein the inorganic material comprises SiOx and SiNx. The method of claim 17,
The blue light cutting filter may be formed of a plurality of layers of 3 to 20 layers stacked,
Wherein the band-pass filter is formed of a plurality of layers in which 20 to 40 layers are stacked. The method of claim 18,
Wherein the uppermost and lowermost layers of the blue light cutting filter comprise SiOx,
Wherein the uppermost layer and the lowermost layer of the band-pass filter comprise SiNx. 20. The method of claim 19,
Wherein the thickness of each of the blue light cutting filter and the band pass filter is 1 to 10 占 퐉.

Images