KR20170025964A - Electrostatic chuck and substrate treating apparatus including the same - Google Patents
Electrostatic chuck and substrate treating apparatus including the same Download PDFInfo
- Publication number
- KR20170025964A KR20170025964A KR1020150123134A KR20150123134A KR20170025964A KR 20170025964 A KR20170025964 A KR 20170025964A KR 1020150123134 A KR1020150123134 A KR 1020150123134A KR 20150123134 A KR20150123134 A KR 20150123134A KR 20170025964 A KR20170025964 A KR 20170025964A
- Authority
- KR
- South Korea
- Prior art keywords
- adhesive layer
- filler
- adhesive
- dielectric plate
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 239000012790 adhesive layer Substances 0.000 claims abstract description 138
- 239000000945 filler Substances 0.000 claims abstract description 56
- 239000000853 adhesive Substances 0.000 claims abstract description 35
- 230000001070 adhesive effect Effects 0.000 claims abstract description 35
- 238000001816 cooling Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 58
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000002041 carbon nanotube Substances 0.000 claims description 9
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 9
- 239000007770 graphite material Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 39
- 239000012809 cooling fluid Substances 0.000 description 13
- 238000003860 storage Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 230000005672 electromagnetic field Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 electrons Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to an electrostatic chuck provided in a substrate processing apparatus. An electrostatic chuck according to an embodiment of the present invention includes a dielectric plate including an electrode for attracting the substrate with an electrostatic force; A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body, wherein the adhesive layer includes a first adhesive and a plurality of And a first adhesive layer comprising a first filler.
Description
The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus using plasma.
In order to manufacture a semiconductor device, a substrate is subjected to various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning to form a desired pattern on the substrate. Among them, the wet etching and the dry etching are used for removing the selected heating region from the film formed on the substrate.
Among them, an etching apparatus using a plasma is used for dry etching. Generally, in order to form a plasma, an electromagnetic field is formed in an inner space of a chamber, and an electromagnetic field excites a process gas provided in the chamber into a plasma state.
Plasma is an ionized gas state composed of ions, electrons, radicals, and so on. Plasma is generated by very high temperatures, strong electric fields, or RF electromagnetic fields. The semiconductor device fabrication process employs a plasma to perform the etching process. The etching process is performed by colliding the ion particles contained in the plasma with the substrate.
1 is a cross-sectional view showing a general
In this case, it is easy to overcome the structural reliability problem of the joint surface due to the difference in thermal expansion coefficient between the body 6 and the
In general, it is also possible to adjust the width and height of the
The present invention is to provide an apparatus which can thickly provide an adhesive layer for bonding a body and a dielectric plate.
It is another object of the present invention to provide a device capable of preventing a structural reliability problem of a joint surface due to a difference in thermal expansion coefficient between a body and a dielectric plate.
Further, the present invention is to provide a device capable of setting a large temperature difference between the substrate and the cooling channel.
It is another object of the present invention to provide an apparatus capable of easily controlling the heat distribution in each region when viewed from the top of the electrostatic chuck.
The present invention also provides a device capable of uniformly treating a substrate.
The present invention provides an electrostatic chuck. An electrostatic chuck according to an embodiment of the present invention includes a dielectric plate including a substrate and an electrostatic electrode for attracting the substrate by electrostatic force; A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body, wherein the adhesive layer includes a first adhesive and a plurality of And a first adhesive layer comprising a first filler.
The first pillar is provided in a polygonal plate shape. The first filler is provided as a graphite material in the shape of a hexagonal plate. The first filler is provided so as to be polygonal when viewed from the front.
The first filler may be provided in a cylindrical shape. The first filler may be provided as a carbon nanotube material. The first filler may be provided in the vertical direction in the longitudinal direction.
The first filler may be provided at different densities for each region of the first adhesive layer when viewed from above.
The first filler may be provided at an edge area of the first adhesive layer at a density higher than a central area of the first adhesive layer.
The adhesive layer may be provided to be laminated on the first adhesive layer, and may further include a second adhesive layer having a thermal conductivity lower than that of the first adhesive layer.
Wherein the second adhesive layer comprises: a second adhesive; And a plurality of second pillars in the second adhesive, wherein the second pillars have a lower thermal conductivity in the vertical direction than the first pillars.
The adhesive layer is differently provided for each region when the ratio of the thickness between the first adhesive layer and the second adhesive layer is viewed from the top.
The first adhesive layer is provided thicker in the edge region of the adhesive layer than in the central region of the adhesive layer when viewed from above.
The adhesive layer may be provided with the same thickness as a whole when viewed from the front.
The present invention also provides a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a chamber for processing a substrate and having a processing space therein; A support unit disposed in the processing space and having an electrostatic chuck on which a substrate is placed; A gas supply unit for supplying a process gas into the process space; A plasma source for generating a plasma from the process gas in the processing space, the electrostatic chuck comprising: a dielectric plate comprising an electrostatic electrode for adsorbing the substrate with an electrostatic force; A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body, wherein the adhesive layer includes a first adhesive and a plurality of And a first adhesive layer comprising a first filler.
The first pillar is provided in a polygonal plate shape. The first filler is provided as a graphite material in the shape of a hexagonal plate. The first filler is provided so as to be polygonal when viewed from the front.
The first filler may be provided in a cylindrical shape. The first filler may be provided as a carbon nanotube material. The first filler may be provided in the vertical direction in the longitudinal direction.
The first filler is provided at different densities for each region of the first adhesive layer when viewed from above.
The first filler is provided at an edge region of the first adhesive layer at a higher density than the central region of the first adhesive layer.
The adhesive layer is provided to be laminated on the first adhesive layer, and further includes a second adhesive layer having a thermal conductivity lower than that of the first adhesive layer.
Wherein the second adhesive layer comprises: a second adhesive; And a plurality of second pillars in the second adhesive, wherein the second pillars have a lower thermal conductivity in the vertical direction than the first pillars.
The adhesive layer is differently provided for each region when the ratio of the thickness between the first adhesive layer and the second adhesive layer is viewed from the top.
The first adhesive layer is provided thicker in the edge region of the adhesive layer than in the central region of the adhesive layer when viewed from above.
An apparatus according to an embodiment of the present invention can provide a thick adhesive layer for bonding the body and the dielectric plate.
In addition, the apparatus according to an embodiment of the present invention can prevent the reliability problem of the joint surface due to the difference in thermal expansion coefficient between the body and the dielectric plate.
Further, the apparatus according to an embodiment of the present invention can set a large temperature difference between the substrate and the cooling channel.
In addition, the apparatus according to an embodiment of the present invention can easily control heat distribution by region when viewed from the top of the electrostatic chuck.
Further, an apparatus according to an embodiment of the present invention can uniformly process a substrate.
1 is a sectional view showing a general substrate processing apparatus.
2 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
Figure 3 is a cross-sectional view showing the adhesive layer of Figure 2;
4 is a view showing a part of the adhesive layer of Fig.
5 is a view showing a part of the adhesive layer of Fig. 3 according to another embodiment.
6 is a view showing the adhesive layer of FIG. 2 according to another embodiment.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.
In an embodiment of the present invention, a substrate processing apparatus for etching a substrate using plasma will be described. However, the present invention is not limited to this, but can be applied to various kinds of apparatuses required to fix the body and the dielectric plate provided with mutually different materials to each other using an adhesive.
Further, in the embodiment of the present invention, a substrate processing apparatus for etching a substrate by generating a plasma by an inductively coupled plasma (ICP) method will be described. However, the present invention is not limited to this, and can be applied to various types of apparatuses that process substrates using a plasma, such as a capacitively coupled plasma (CCP) method or a remote plasma method.
2 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 2, the
The
The
The
The
The
The electrostatic chuck 201 includes a
The dielectric plate (200) is provided with a substrate (W). The
The
The
The
The
The
The
The
The
3 is a cross-sectional view showing the
Fig. 4 is a view showing a part of the
The first adhesive 281a is provided with a high-elasticity insulating material. For example, the first adhesive 281a may be provided with silicon (Si).
A plurality of
5 is a view showing a part of the adhesive layer of Fig. 3 according to another embodiment. Referring to FIG. 5, unlike the case of FIG. 4, the
The
The second
The second adhesive 282a is provided with a high-elasticity insulating material. For example, the second adhesive 282a may be provided as silicon (Si).
The
Referring again to FIG. 3, the
6 is a view showing the adhesive layer of FIG. 2 according to another embodiment. Referring to FIG. 6, only the first
When the ratio of the thicknesses between the first
Alternatively, the
Also, unlike the above, the
As described above, the
The
The
The
10: substrate processing apparatus W: substrate
100: chamber 200: support unit
201: electrostatic chuck 220: dielectric plate
223: electrostatic electrode 230: body
232: cooling member 280: adhesive layer
281: first
281b: first filler 282: second adhesive layer
282a: second adhesive 282b: second filler
300: gas supply unit 400: plasma source
500: Exhaust unit
Claims (27)
A dielectric plate including an electrostatic electrode that adsorbs the substrate with an electrostatic force;
A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And
And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body,
Wherein the adhesive layer comprises:
And a first adhesive layer including a first adhesive and a plurality of first fillers provided in a shape other than a sphere in the first adhesive.
Wherein the first filler is provided in the shape of a polygonal plate.
Wherein the first filler is provided in a hexagonal plate-like graphite material.
Wherein the first filler is provided so as to be polygonal when viewed from the front side.
Wherein the first filler is provided in a cylindrical shape.
Wherein the first filler is provided as a carbon nanotube material.
Wherein the first filler is provided in the longitudinal direction in a vertical direction.
Wherein the first filler is provided at different densities for each region of the first adhesive layer when viewed from above.
Wherein the first filler is provided at an edge area of the first adhesive layer at a density higher than a central area of the first adhesive layer.
Wherein the adhesive layer is provided so as to be laminated on the first adhesive layer and further comprises a second adhesive layer having a thermal conductivity lower than that of the first adhesive layer.
Wherein the second adhesive layer
A second adhesive; And
And a plurality of second fillers in the second adhesive,
Wherein the second filler has a lower thermal conductivity with respect to the vertical direction than the first filler.
Wherein the adhesive layer is differently provided for each region when the ratio of the thickness between the first adhesive layer and the second adhesive layer is viewed from the top.
Wherein the first adhesive layer is provided thicker in an edge region of the adhesive layer than in a central region of the adhesive layer when viewed from above.
Wherein the adhesive layer is provided with a uniform thickness as a whole when viewed from the front side.
A chamber having a processing space therein;
A support unit disposed in the processing space and having an electrostatic chuck on which a substrate is placed;
A gas supply unit for supplying a process gas into the process space;
And a plasma source for generating a plasma from the process gas in the processing space,
Wherein the electrostatic chuck comprises:
A dielectric plate including an electrostatic electrode that adsorbs the substrate with an electrostatic force;
A body located below the dielectric plate and provided with a cooling member for cooling the electrostatic chuck therein; And
And an adhesive layer disposed between the dielectric plate and the body and fixing the dielectric plate and the body,
Wherein the adhesive layer comprises:
And a first adhesive layer including a first adhesive and a plurality of first fillers provided in a shape other than a sphere in the first adhesive.
Wherein the first filler is provided in the shape of a polygonal plate.
Wherein the first filler is provided as a hexagonal plate-shaped graphite material.
Wherein the first filler is provided so as to be polygonal when viewed from the front side.
Wherein the first filler is provided in a cylindrical shape.
Wherein the first filler is provided as a carbon nanotube material.
Wherein the first filler is provided in the longitudinal direction in a vertical direction.
Wherein the first filler is provided at different densities for each region of the first adhesive layer when viewed from above.
Wherein the first filler is provided at an edge area of the first adhesive layer at a higher density than the central area of the first adhesive layer.
Wherein the adhesive layer is provided so as to be laminated on the first adhesive layer, and further comprises a second adhesive layer having a thermal conductivity lower than that of the first adhesive layer.
Wherein the second adhesive layer
A second adhesive; And
And a plurality of second fillers in the second adhesive,
Wherein the second pillars have lower thermal conductivities with respect to the vertical direction than the first pillars.
Wherein the adhesive layer is provided differently for each region when the ratio of the thickness between the first adhesive layer and the second adhesive layer is viewed from the top.
Wherein the first adhesive layer is provided thicker in an edge area of the adhesive layer than in a central area of the adhesive layer when viewed from above.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150123134A KR101791871B1 (en) | 2015-08-31 | 2015-08-31 | Electrostatic chuck and substrate treating apparatus including the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150123134A KR101791871B1 (en) | 2015-08-31 | 2015-08-31 | Electrostatic chuck and substrate treating apparatus including the same |
Publications (2)
Publication Number | Publication Date |
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KR20170025964A true KR20170025964A (en) | 2017-03-08 |
KR101791871B1 KR101791871B1 (en) | 2017-10-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020150123134A KR101791871B1 (en) | 2015-08-31 | 2015-08-31 | Electrostatic chuck and substrate treating apparatus including the same |
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KR (1) | KR101791871B1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190000783A (en) * | 2017-06-23 | 2019-01-03 | 신꼬오덴기 고교 가부시키가이샤 | Substrate fixing device |
JP2020047747A (en) * | 2018-09-19 | 2020-03-26 | 日本特殊陶業株式会社 | Holding device |
KR20200042330A (en) | 2018-10-15 | 2020-04-23 | 세메스 주식회사 | Apparatus for surpoting substrate and manufacturing mathod threrof |
KR102341865B1 (en) * | 2021-05-13 | 2021-12-21 | 고광노 | An easily repairable electrostatic chuck |
KR102418014B1 (en) * | 2021-08-27 | 2022-07-07 | 주식회사 동탄이엔지 | Electrostatic chuck including flim-type bonding layer having holes and electrostatic chuck manufacturing method |
Family Cites Families (5)
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JP4911981B2 (en) * | 2006-02-03 | 2012-04-04 | 旭化成イーマテリアルズ株式会社 | Curing agent for highly water-containing solvent-containing epoxy resin and epoxy resin composition |
JP5307445B2 (en) * | 2008-04-28 | 2013-10-02 | 日本碍子株式会社 | Substrate holder and method for manufacturing the same |
WO2010061740A1 (en) * | 2008-11-25 | 2010-06-03 | 京セラ株式会社 | Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus |
JP5267603B2 (en) * | 2010-03-24 | 2013-08-21 | Toto株式会社 | Electrostatic chuck |
JP2012238820A (en) * | 2011-05-13 | 2012-12-06 | Nitto Denko Corp | Thermally conductive sheet, insulating sheet and heat dissipating member |
-
2015
- 2015-08-31 KR KR1020150123134A patent/KR101791871B1/en active IP Right Grant
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190000783A (en) * | 2017-06-23 | 2019-01-03 | 신꼬오덴기 고교 가부시키가이샤 | Substrate fixing device |
JP2019009270A (en) * | 2017-06-23 | 2019-01-17 | 新光電気工業株式会社 | Board retainer |
US11145531B2 (en) | 2017-06-23 | 2021-10-12 | Shinko Electric Industries Co., Ltd. | Substrate fixing device |
JP2020047747A (en) * | 2018-09-19 | 2020-03-26 | 日本特殊陶業株式会社 | Holding device |
KR20200042330A (en) | 2018-10-15 | 2020-04-23 | 세메스 주식회사 | Apparatus for surpoting substrate and manufacturing mathod threrof |
US11011405B2 (en) | 2018-10-15 | 2021-05-18 | Semes Co., Ltd. | Apparatus for supporting substrate having gas supply hole and method of manufacturing same |
KR102341865B1 (en) * | 2021-05-13 | 2021-12-21 | 고광노 | An easily repairable electrostatic chuck |
KR102418014B1 (en) * | 2021-08-27 | 2022-07-07 | 주식회사 동탄이엔지 | Electrostatic chuck including flim-type bonding layer having holes and electrostatic chuck manufacturing method |
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