KR20170024412A - Lgiht emitting device - Google Patents

Abstract

The present invention provides a light emitting device using a fluoride fluorescent substance with excellent reliability. According to one embodiment of the present invention, the light emitting device comprises a light emitting device to emit first light, and a wavelength conversion layer to convert a wavelength of the first light. The wavelength conversion layer comprises: a first wavelength conversion substance absorbing the first light to emit light of a green wavelength range; and a second wavelength conversion substance absorbing the first light to emit light of a red wavelength range. The second wavelength conversion substance satisfies a structural formula which is K_2M_(1-x)Mn^(4+)_xF_6, wherein M is at least one element selected from a group including group 4 and 14 elements, and x satisfies 0.028 < x < 0.055.

Description

LIGHT EMITTING DEVICE

An embodiment relates to a light emitting device.

A light emitting device (LED) is a compound semiconductor device that converts electric energy into light energy. By controlling the composition ratio of the compound semiconductor, various colors can be realized.

The nitride semiconductor light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps. Accordingly, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting diode lighting device capable of replacing a fluorescent lamp or an incandescent lamp, And traffic lights.

The light emitting device can emit white light by combining a light emitting element (light emitting chip) and a phosphor. Recently, K ₂ SiF ₆ phosphors have been studied as red phosphors. However, when white light is implemented using such a fluorophosphor, the color coordinate may change in a high temperature environment.

The embodiment provides a light emitting device using a fluoride fluorescent substance and a fluoride fluorescent substance which are excellent in reliability.

The problems to be solved in the embodiments are not limited to these, and the objects and effects that can be grasped from the solution means and the embodiments of the problems described below are also included.

A light emitting device according to an embodiment of the present invention includes: a light emitting element that emits a first light; And a wavelength conversion layer for converting the wavelength of the first light, wherein the wavelength conversion layer comprises: a first wavelength converter for absorbing the first light and emitting light in a green wavelength range; And a second wavelength converter for absorbing the first light and emitting light of a red wavelength band, wherein the second wavelength converter can satisfy the following structural formula.

[constitutional formula]

K ₂ M _{1 - x} Mn ^{4 +} _X F ₆

Here, M is at least one element selected from the group consisting of Group 4 elements and Group 14 elements, and X satisfies 0.028? X?

The wavelength conversion layer may include a light transmitting resin in which the first wavelength converter and the second wavelength converter are dispersed.

The total amount of the first wavelength converter and the second wavelength converter may be 25 wt% to 50 wt% based on 100 wt% of the composition of the wavelength conversion layer.

The total amount of the first wavelength converter and the second wavelength converter may be 25 wt% to 45 wt% based on 100 wt% of the composition of the wavelength conversion layer.

The content ratio of the first wavelength converter may be 25% to 40%, and the content ratio of the second wavelength converter may be 60% to 75%.

The molar ratio of Mn of the second wavelength converter may be 0.04 mol to 0.055 mol.

The total amount of the first wavelength converter and the second wavelength converter may be 30 wt% to 50 wt% based on 100 wt% of the composition of the wavelength conversion layer.

The content ratio of the first wavelength converter may be 15% to 30%, and the content ratio of the second wavelength converter may be 70% to 85%.

The molar ratio of Mn of the second wavelength converter may be 0.028 mol to 0.399 mol.

According to the embodiment, the Cx change of the light emitting device can be controlled. Therefore, the reliability of the light emitting device can be improved.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a conceptual diagram of a light emitting device according to an embodiment of the present invention,
FIG. 2 is a graph of the color coordinates of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 75%
FIG. 3 is a graph of a luminous flux of white light realized using a red phosphor having a molar ratio of Mn of 100% and 75%
4 is a graph showing a spectrum of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 75%
FIG. 5 is a graph of the chromaticity coordinates of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 50%
6 is a graph showing the luminous fluxes of white light realized by using a red phosphor having a molar ratio of Mn of 100% and 50%
7 is a graph showing a spectrum of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 50%
8 is a graph in which the color coordinates of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 30%
9 is a graph showing the luminous fluxes of white light realized using a red phosphor having a molar ratio of Mn of 100% and 30%
10 is a graph showing a spectrum of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 30%
11 is a graph showing a spectrum of a red phosphor in which the molar ratios of Mn are adjusted to 100%, 75% and 50%.
12 is a graph showing a change in the luminous flux under the condition of the white light using the red phosphor in which the molar ratios of Mn are 100%, 75% and 50%
13 is a graph showing a change in Cx chromaticity coordinates of a white light using a red phosphor having molar ratios of Mn of 100%, 75% and 50% under a condition of 60 ° C,
FIG. 14 is a graph showing a change in the Cy color coordinate under the condition of the white light using the red phosphor having the molar ratios of Mn of 100%, 75% and 50% at 60 ° C,
15 is a graph showing a change in the luminous flux under the condition of 80 占 폚 of the white light using the red phosphor in which the molar ratios of Mn are 100%, 75% and 50%
16 is a graph showing a change in Cx chromaticity coordinates of white light using a red phosphor in which the molar ratios of Mn are 100%, 75% and 50% under the condition of 80 占 폚,
17 is a graph in which the Cy color coordinate changes under the condition of 80 占 폚 of the white light using the red phosphor in which the molar ratios of Mn are 100%, 75%, and 50%
18 is a graph showing a change in the luminous flux under the condition of 80 DEG C / 85% of the white light using the red phosphor in which the molar ratios of Mn are 100%, 75% and 50%
19 is a graph showing a change in the Cx color coordinates under the condition of the white light using the red phosphor having the molar ratios of Mn of 100%, 75% and 50% at 80 DEG C / 85%
20 is a graph showing a change in the Cy color coordinate under the condition of 80 ° C / 85% of white light using a red phosphor in which the molar ratios of Mn are 100%, 75%, and 50%
FIG. 21 is a conceptual diagram of the light emitting device of FIG. 1,
22 is a conceptual view of a light emitting device package according to an embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the embodiments of the present invention are not intended to be limited to the specific embodiments but include all modifications, equivalents, and alternatives falling within the spirit and scope of the embodiments.

Terms including ordinals, such as first, second, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the embodiments, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or &lt; / RTI &gt; includes any combination of a plurality of related listed items or any of a plurality of related listed items.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the embodiments of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

In the description of the embodiments, in the case where one element is described as being formed "on or under" another element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

1 is a conceptual diagram of a light emitting device according to an embodiment of the present invention.

1, the light emitting device of the embodiment includes a light emitting device 100 that emits a first light L1 and a wavelength conversion layer 200 that emits light by absorbing a part of the first light L1.

The light emitting device 100 may be a blue light emitting device emitting light of 420 nm to 470 nm or a UV emitting device emitting light of ultraviolet wavelength band. The structure of the light emitting element 100 is not particularly limited.

The wavelength conversion layer 200 includes a first wavelength converter 201, a second wavelength converter 202, and a light transmitting resin 204 into which the first wavelength converter 201 and the second wavelength converter 202 are dispersed. The structure of the wavelength conversion layer 200 is not limited.

The wavelength conversion layer 200 may be disposed only on the upper surface of the light emitting device 100, or may be disposed on the upper surface and the side surface. Alternatively, the light emitting device 100 may be entirely molded by being filled in the cavity of the package.

The light-transmitting resin 204 may be selected from the group consisting of an epoxy resin, a silicone resin, a polyimide resin, a urea resin, and an acrylic resin, but is not limited thereto.

The first light L1 emitted from the light emitting device 100 and the light converted by the wavelength conversion layer 200 may be mixed to realize the CIE color coordinate white light L2.

The first wavelength converter 201 may absorb a part of the first light L1 and emit light of a green wavelength band. The light in the green wavelength range has a peak at 525 nm to 545 nm, and the half width (FWHM) may be 45 nm to 55 nm.

The first wavelength conversion member 201 is β (beta) type _{SiAlON: Eu, BaYSi 4 N 7} : Eu, Ba 3 Si 6 O 12 N 2: Eu, CaSi 2 O 2 N 2: Eu, SrYSi 4 N 7: Eu, LuAG, and the like.

The second wavelength converter 202 may absorb a portion of the first light L1 and emit light of a red wavelength band. The light in the red wavelength range has a peak at 630 nm to 635 nm, and the half width (FWHM) may be 5 nm to 10 nm. The second wavelength converter may be a fluoride phosphor satisfying the following structural formula.

[constitutional formula]

K ₂ M _1-x Mn ⁴⁺ _X F ₆

Here, M may be at least one element selected from the group consisting of a Group 4 element and a Group 14 element. As an example, M may be Si or Ti. X may satisfy 0.028? X? 0.0555. That is, the molar ratio of the activating element Mn may be 0.024 mol to 0.055 mol. Hereinafter, for convenience of explanation, the second wavelength converter is described as a red phosphor represented by K ₂ SiF ₆ : Mn ^{4 +} .

The total amount of the first wavelength converter 201 and the second wavelength converter 202 may be from 25 wt% to 45 wt% based on 100 wt% of the composition of the wavelength conversion layer, when the molar ratio of Mn is 0.04 mol to 0.055 mol . For example, when the total amount of the first wavelength converter and the second wavelength converter is 40 wt%, the content of the light-transmitting resin 204 may be 60 wt%.

In this case, the content ratio of the first wavelength converter 201 may be 25% to 40%, and the content ratio of the second wavelength converter 202 may be 60% to 75%. When these conditions are satisfied, white light can be realized in the CIE coordinate system. In addition, as described later, the Cx color coordinate deviation can be improved.

When the molar ratio of Mn is 0.028 mol to 0.399 mol, the total amount of the first wavelength converter 201 and the second wavelength converter 202 may be 30 wt% to 50 wt% based on 100 wt% of the composition of the wavelength conversion layer . At this time, the content ratio of the first wavelength converter 201 may be 15% to 30%, and the content ratio of the second wavelength converter 202 may be 70% to 85%. When these conditions are satisfied, white light can be realized on the CIE coordinate system by mixing with the light of the light emitting device. Also, the Cx color coordinate deviation of the package can be improved.

Hereinafter, the case where the molar ratio of Mn is 0.07 mole is defined as Mn: 100%, 0.525 mole is defined as 75% of Mn, 0.035 mole is defined as 50% of Mn, and 0.021 mole is defined as Mn: 30%.

FIG. 2 is a graph of the color coordinates of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 75%. FIG. 3 is a graph FIG. 4 is a graph showing a spectrum of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 75%. FIG.

In the comparative example, white light was realized by using a blue light emitting element, a beta SiAlON green phosphor and a red phosphor of Mn: 100%. In the first embodiment, white light is realized by using a blue light emitting element, a green phosphor of beta SiAlON, and a red phosphor of Mn: 75%.

Table 1 below is a table in which luminous flux, CIE chromaticity coordinates, color reproducibility (NTSC) and wavelength peak (WP) of white light realized by the comparative example and the first embodiment are measured. Table.

division
Phosphor Flux
(lm) Flux
(%) Cx
Cy
NTSC
(%) WP
(nm) Green Red Comparative Example
Beta
SiAlON KSF
Mn: 100% 13.7 100.0 0.268 0.265 89.8 447.4 First Embodiment KSF
Mn: 75% 13.5 98.6 0.268 0.265 88.8 446.4

division Light-transmitting resin
Phosphor blending ratio (%) Total
(wt%) Green
Beta-SiAlON KSF
Mn: 100% KSF
Mn: 75% Comparative Example silicon
20.9 33.5 66.5 - First Embodiment 25.2 31.2 - 68.8

As shown in FIG. 2, both the white light of the comparative example and the first embodiment are white light in the CIE coordinate system. 3 and Table 1, the luminous flux of the first embodiment is almost the same as that of the comparative example.

Referring to Table 2, it can be seen that in the comparative example, the total amount of the phosphors was 20.9 wt% based on 100 wt% of the total composition, whereas the total amount increased to 25.2 wt% in the first embodiment. In the case of the first embodiment, the content ratio of the red phosphor is 68.8%, which is slightly higher than that of the comparative example.

That is, when the molar ratio of Mn of the red phosphor is lowered, it is understood that the total amount of the phosphor increases and the content of the red phosphor increases in order to maintain the white light in the CIE coordinates.

FIG. 5 is a graph showing the color coordinates of white light realized using a red phosphor having a molar ratio of Mn of 100% and 50%. FIG. 6 is a graph FIG. 7 is a graph showing a spectrum of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 50%. FIG.

In the comparative example, white light was realized by using a blue light emitting element, a green phosphor of beta SiAlON, and a red phosphor of Mn: 100%. The second embodiment implements white light using a blue light emitting element, a green phosphor of beta SiAlON, and a red phosphor of Mn: 50%.

Table 3 shows the luminous flux of the white light, the CIE chromaticity coordinates, the color reproducibility (NTSC), and the wavelength peak (WP) measured by the comparative example and the second embodiment. Table 4 shows the phosphor blending ratio.

division
Phosphor Flux
(lm) Flux
(%) Cx
Cy
NTSC
(%) WP
(nm) Green Red Comparative Example
Beta
SiAlON
KSF
Mn: 100% 11.96 100 0.245 0.220 91.0 446.7 Second Embodiment KSF
Mn: 50% 12.07 100.9 0.244 0.220 90.7 446.5

division Light-transmitting resin
Phosphor blending ratio (%) Total
(wt%) Green
Beta-SiAlON KSF
Mn: 100% KSF
Mn: 50% Comparative Example silicon
20.0 32 68 - Second Embodiment 33.0 18.5 - 81.5

As shown in FIG. 5, it can be seen that both the white light of the comparative example and the second embodiment are white light in the CIE coordinate system. 6 and Table 3, the luminous flux of the second embodiment is almost the same as that of the comparative example.

Referring to Table 4, it can be seen that the total amount of the phosphor was 20.0 wt% based on 100 wt% of the total composition, whereas the total amount of the phosphor increased to 33.0 wt% in the second embodiment. In the case of the second embodiment, the content ratio of the red phosphor is 81.5%, which is higher than that of the comparative example.

The total amount of the total phosphors and the content of the red phosphor are increased in the second embodiment using Mn: 50% as compared with the first embodiment.

FIG. 8 is a graph showing the color coordinates of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 30%, and FIG. 9 is a graph showing the relationship between a red phosphor having a molar ratio of Mn of 100% FIG. 10 is a graph showing a spectrum of a white light realized using a red phosphor having a molar ratio of Mn of 100% and 30%. FIG.

In the comparative example, white light was realized by using a blue light emitting element, a green phosphor of beta SiAlON, and a red phosphor of Mn: 100%. In the third embodiment, white light is realized by using a blue light emitting element, a green phosphor of beta SiAlON, and a red phosphor of Mn: 30%.

Table 5 shows the luminous flux of the white light, the CIE chromaticity coordinates, the color reproducibility (NTSC), and the wavelength peak (WP) of the white light realized by the comparative example and the third example. Table 6 shows the phosphor blend ratio.

division
Phosphor Flux
(lm) Flux
(%) Cx
Cy
NTSC
(%) WP
(nm) Green Red Comparative Example
Beta
SiAlON
KSF
Mn: 100% 15.92 100 0.259 0.248 87.0 447.9 Third Embodiment KSF
Mn: 30% 15.55 97.4 0.259 0.248 86.6 447.9

division Light-transmitting resin
Phosphor blending ratio (%) Total
(wt%) Green
Beta-SiAlON KSF
Mn: 100% KSF
Mn: 30% Comparative Example silicon
28.5 31.5 68.5 - Third Embodiment 91.0 10.5 - 89.5

8, both the first white light and the second white light are white light in the CIE coordinate system. However, referring to FIGS. 9 and 5, it can be seen that the luminous flux of the third embodiment is reduced by about 2.3% as compared with the comparative example.

In the comparative example, the total amount of the phosphors is 28.0 wt% based on 100 wt% of the total composition, whereas the total amount of the phosphors in the third embodiment is very high of 91.0 wt%. In the case of the third embodiment, the content ratio of the red phosphor is 89.5%, which is much higher than that of the comparative example.

Therefore, when the molar ratio of Mn is lowered to 30% or less, the light flux is lowered and the total amount of the fluorescent substance may be excessively increased. This can lead to reliability problems.

11 is a graph showing a spectrum of a red phosphor whose Mn molar ratio is adjusted to 100%, 75%, and 50%.

Table 7 below is a table for measuring the wavelength peak (WP), the relative luminance, the full width at half maximum, and the incidence size according to the molar ratio of Mn.

division Wavelength peak
[nm] Relative luminance
(%) Half width
[nm] Particle size [탆] D10 D50 D90 D90-D10 KSF-Mn 100% 632 100 7 18 26 40 22 KSF-Mn 75% 632 91 7 18 26 40 22 KSF-Mn 50% 632 77 7 18 26 40 22

Referring to Table 7 and FIG. 11, when the luminance of the red phosphor of 100% Mn is 100, the relative luminance of the red phosphor of Mn: 75% is 91% and the relative luminance of the red phosphor of Mn: 77%, respectively. However, it can be seen that the full width at half maximum, wavelength peak and particle size are substantially the same.

FIG. 12 is a graph showing a change in the luminous flux under the condition of 60 ° C of the white light using the red phosphor having the molar ratios of Mn of 100%, 75% and 50%. FIG. FIG. 14 is a graph showing a change in the Cx color coordinate under the condition of 60 ° C. FIG. 14 is a graph showing the change in the color coordinates of white light using a red phosphor having a molar ratio of Mn of 100%, 75%, and 50% And the change in Cy color coordinate under the condition of 60 占 폚.

Referring to FIG. 12, it can be seen that the variation of the light flux of white light is relatively low in the case of the third embodiment using a red phosphor of Mn: 50%. On the contrary, in the case of Comparative Example using a red phosphor of Mn: 100% and Example 1 using a red phosphor of Mn: 75%, it is understood that the luminous flux reduction width increases with time.

Referring to FIG. 13, in the case of the third embodiment, it is found that the width of Cx coordinate change of white light is the lowest. In the case of the comparative example, it can be seen that the width of the Cx coordinate varies with time.

Therefore, it can be seen that reliability of the package can be improved by lowering the molar ratio of Mn of the red phosphor. However, the Mn molar ratio of the red phosphor and the total amount of the phosphor may be in inverse proportion. That is, the lower the molar ratio of Mn, the lower the Cx change rate but the greater the amount of phosphor used.

However, referring to FIG. 14, it can be seen that the variation widths of the Cy coordinates are relatively similar even after the lapse of time in the comparative example, the first embodiment, and the second embodiment.

Similar deviations of the luminous flux, the Cx color coordinates, and the Cy color coordinates were obtained when the temperature was further increased to 80 ° C as shown in FIGS. 15 to 17. Similar results were also obtained under the conditions of high temperature / high humidity (80 DEG C / 85%) as shown in Figs. 18 to 20. Fig.

FIG. 21 is a conceptual view of the light emitting device of FIG. 1, and FIG. 22 is a conceptual view of a light emitting device package according to an embodiment of the present invention.

Referring to FIG. 21, the substrate 110 of the light emitting device 100 includes a conductive substrate or an insulating substrate. The substrate 110 may be a material suitable for semiconductor material growth or a carrier wafer. The substrate 110 may be formed of a material selected from the group consisting of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge.

The buffer layers 111 and 112 may mitigate the lattice mismatch between the substrate 110 and the light emitting structure provided on the substrate 110. The buffer layers 111 and 112 can be grown on the substrate 110 as a single crystal and the buffer layers 111 and 112 grown with a single crystal can improve the crystallinity of the first semiconductor layer 130.

The light emitting structure provided on the substrate 110 includes a first semiconductor layer 130, an active layer 140, and a second semiconductor layer 160. In general, the light emitting structure may be divided into a plurality of parts by cutting the substrate 110.

The first semiconductor layer 130 may be a compound semiconductor such as a III-V group or a II-VI group, and the first semiconductor layer 130 may be doped with a first dopant. The first semiconductor layer 130 may be a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga ₁ -x ₁ -y1 N (0? _{X1? 1} , 0 _{? Y1? 1} , 0? X1 + _{y1? 1} ) GaN, AlGaN, InGaN, InAlGaN, and the like. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first semiconductor layer 130 doped with the first dopant may be an n-type semiconductor layer.

The active layer 140 is a layer where electrons (or holes) injected through the first semiconductor layer 130 and holes (or electrons) injected through the second semiconductor layer 160 meet. As the electrons and the holes are recombined, the active layer 140 transits to a low energy level and can generate light having a wavelength corresponding thereto. There is no limitation on the emission wavelength in this embodiment.

The active layer 140 may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, Is not limited thereto.

The active layer 140 may have a structure in which a plurality of well layers and barrier layers are alternately arranged. The well layer and the barrier layer may have a composition formula of InxAlyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? 1), and the energy band gap of the barrier layer Band gap.

The second semiconductor layer 160 may be formed on the active layer 140 and may be formed of a compound semiconductor such as a group III-V or II-VI group. The second semiconductor layer 160 may be doped with a second dopant . A second semiconductor layer 160 is a semiconductor material having a compositional formula of _{In x5 Al y2 Ga 1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5 + y2≤1) or AlInN, AlGaAs , GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second semiconductor layer 160 doped with the second dopant may be a p-type semiconductor layer.

An electron blocking layer (EBL) 150 may be disposed between the active layer 140 and the second semiconductor layer 160. The electron blocking layer 150 blocks the flow of electrons supplied from the first semiconductor layer 130 to the second semiconductor layer 160 and increases the probability that electrons and holes recombine in the active layer 140 have. The energy band gap of the electron blocking layer 150 may be greater than the energy band gap of the active layer 140 and / or the second semiconductor layer 160.

The electron blocking layer 150 is a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga ₁ -x ₁ -y1 N (0? _{X1? 1} , 0 _{? Y1? 1} , 0? X1 + _{y1? 1} ) , InGaN, InAlGaN, and the like, but is not limited thereto.

The first electrode 180 may be formed on the exposed first semiconductor layer 130. Also, a second electrode 170 may be formed on the second semiconductor layer 160. The first electrode 180 and the second electrode 190 may be formed of various metals and transparent electrodes.

The first electrode 180 and the second electrode 170 may be formed of a metal such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, Cr, Mo, Nb, Al, Ni, Cu, and WTi. And may further include an ohmic electrode layer as needed.

22, the light emitting device package 10 according to the embodiment includes the first lead frame 11, the second lead frame 12, the light emitting device 100, the wavelength conversion layer 200, and the body 13 ).

The light emitting device 100 may be a light emitting device having various structures that emit blue or ultraviolet light. Further, the light emitting device 100 may be applied with the configuration described in Fig. 21 as it is.

The light emitting device 100 may be electrically connected to the first lead frame 11 and the second lead frame 12. The electrical connection between the light emitting device 100 and the first and second lead frames 11 and 12 can be determined by the electrode structure (vertical or horizontal) of the light emitting device.

The body 13 includes a cavity 13a in which the first lead frame 11 and the second lead frame 12 are fixed and the light emitting device 100 is exposed. The body 13 may include a polymer resin such as polyphthalamide (PPA).

The wavelength conversion layer 200 is disposed in the cavity 13a and includes first and second wavelength converters 201 and 202. The first and second wavelength converters 201 and 202 may be dispersed in the light-transmitting resin 204. The wavelength conversion layer 200 may include the above-described characteristics.

The light emitting device or the light emitting device package of the embodiment may further include an optical member such as a light guide plate, a prism sheet, and a diffusion sheet to function as a backlight unit. Further, the light emitting element of the embodiment can be further applied to a display device, a lighting device, and a pointing device.

At this time, the display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

The reflector is disposed on the bottom cover, and the light emitting module emits light. The light guide plate is disposed in front of the reflection plate to guide light emitted from the light emitting module forward, and the optical sheet includes a prism sheet or the like and is disposed in front of the light guide plate. The display panel is disposed in front of the optical sheet, and the image signal output circuit supplies an image signal to the display panel, and the color filter is disposed in front of the display panel.

The lighting device may include a light source module including a substrate and a light emitting device of the embodiment, a heat dissipation unit that dissipates heat of the light source module, and a power supply unit that processes or converts an electric signal provided from the outside and provides the light source module . Further, the lighting device may include a lamp, a head lamp, or a street lamp or the like.

It will be apparent to those skilled in the art that various changes, substitutions, and alterations can be made hereto without departing from the spirit and scope of the invention as defined in the appended claims. Will be apparent to those of ordinary skill in the art.

100: Light emitting element
200: wavelength conversion layer
201: first wavelength converter
202: second wavelength converter
204: light transmissive resin

Claims (9)

A light emitting element for emitting the first light; And
And a wavelength conversion layer for converting the wavelength of the first light,
Wherein the wavelength conversion layer comprises:
A first wavelength converter for absorbing the first light and emitting light of a green wavelength band; And
And a second wavelength converter for absorbing the first light and emitting light of a red wavelength band,
And the second wavelength converter satisfies the following structural formula.
[constitutional formula]
K ₂ M _1-x Mn ⁴⁺ _X F ₆
Here, M is at least one element selected from the group consisting of Group 4 elements and Group 14 elements, and X satisfies 0.028? X?
The method according to claim 1,
Wherein the wavelength conversion layer comprises a light-transmitting resin in which the first wavelength converter and the second wavelength converter are dispersed.
The method according to claim 1,
Wherein the total amount of the first wavelength converter and the second wavelength converter is 25 wt% to 50 wt% based on 100 wt% of the composition of the wavelength conversion layer.
The method according to claim 1,
Wherein the total amount of the first wavelength converter and the second wavelength converter is 25 wt% to 45 wt% based on 100 wt% of the composition of the wavelength conversion layer.
5. The method of claim 4,
Wherein a content ratio of the first wavelength converter is 25% to 40%, and a content ratio of the second wavelength converter is 60% to 75%.
5. The method of claim 4,
And the molar ratio of Mn of the second wavelength converter is 0.04 mol to 0.055 mol.
The method of claim 1,
Wherein the total amount of the first wavelength converter and the second wavelength converter is 30 wt% to 50 wt% based on 100 wt% of the composition of the wavelength conversion layer.
The method according to claim 6,
Wherein a content ratio of the first wavelength converter is 15% to 30%, and a content ratio of the second wavelength converter is 70% to 85%.
8. The method of claim 7,
And the molar ratio of Mn of the second wavelength converter is 0.028 mol to 0.399 mol.

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