KR20170023478A - Ultraviolet Light Emitting Device - Google Patents

Abstract

The present invention relates to a light emitting device. The light emitting device includes a substrate; a light emitting structure including a first conductivity type semiconductor layer disposed on the substrate, an active layer and a second conductivity type semiconductor layer; a sub-mount for supporting the light emitting structure; a first bump electrically connecting the sub-mount and the first conductive semiconductor layer; a second bump electrically connecting the sub-mount and the second conductive semiconductor layer; and a heat dissipation layer disposed on a lower surface of the sub-mount and emitting heat generated from the first bump and the second bump. So, an increase in the temperature of the light emitting device can be prevented.

Description

[0001] Ultraviolet Light Emitting Device [0002]

An embodiment relates to an ultraviolet light emitting element.

Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electricity into infrared rays or light by using the characteristics of compound semiconductors, exchange signals, or use as a light source.

III-V nitride semiconductors (group III-V nitride semiconductors) are attracting attention as a core material for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .

1 is a cross-sectional view of a conventional light emitting device, and includes a substrate 20 and a light emitting structure 30.

The light emitting structure 30 disposed on the substrate 20 in Fig. 1 is composed of an n-type semiconductor layer 32, an active layer 34, and a p-type semiconductor layer 36. If light in the ultraviolet wavelength band is emitted from the active layer 34 and each of the n-type and p-type semiconductor layers 32 and 36 is formed of GaN, light is absorbed in the n-type and p-type GaN layers 32 and 36 So that the light extraction efficiency can be deteriorated. In order to improve this, when the n-type and p-type semiconductor layers 32 and 36 are each formed of AlGaN, the amount of light is improved but injection of holes through the p-type AlGaN layer 36B may not be easy. In order to solve this problem, a p-type GaN layer 36A may be further disposed on the p-type AlGaN layer 36B.

Since the conventional ultraviolet light emitting device generally has low EQE (External Quantum Efficiency), there is a problem that the temperature of the light emitting device is increased due to a large amount of heat emitted from the inside of the light emitting device.

In addition, there has been a problem that the life of the light emitting element is reduced due to an increase in the temperature of the light emitting element.

In addition, since a heat dissipating structure for preventing the temperature of the light emitting device from rising is not provided, the temperature of the light emitting device can not be prevented from rising, and the lifetime of the light emitting device is reduced.

The light emitting device of the embodiment has a low external quantum efficiency (EQE) in general, and thus it is an object of the present invention to provide a light emitting device that prevents the temperature of the light emitting device from rising due to a large amount of heat emitted from the inside of the light emitting device.

Another object of the present invention is to provide a light emitting device which solves the problem that the lifetime of the light emitting device is reduced due to an increase in the temperature of the light emitting device.

A further object of the present invention is to provide a light emitting device having a heat dissipating structure for preventing the temperature of the light emitting device from rising, thereby preventing the temperature of the light emitting device from rising, thereby prolonging the life of the light emitting device.

According to an aspect of the present invention, there is provided a light emitting device including a substrate, a first conductive semiconductor layer disposed on the substrate, a light emitting structure including an active layer and a second conductive semiconductor layer, a submount supporting the light emitting structure, A first bump electrically connecting the submount and the first conductive semiconductor layer, a second bump electrically connecting the submount and the second conductive semiconductor layer, and a second bump electrically connecting the submount and the first conductive semiconductor layer, And a heat dissipating layer for dissipating heat generated from the first bump and the second bump.

In addition, the first bump and the second bump are provided in a state where they are electrically connected in series to each other.

The light emitting device may further include a first wire for applying a current to the first bump and a second wire for applying a current to the second bump, wherein the first wire and the second wire are mutually opposite in polarity As a solution to the problem.

The first bump is a Bi-Te-Se light-emitting device.

The second bump is a Bi-Sb-Te light-emitting device.

The light emitting device includes a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer, and a second conductive semiconductor layer disposed on the substrate, A semiconductor light emitting device comprising: a light emitting structure including a conductive semiconductor layer; a submount supporting the light emitting structure; a first bump electrically connecting the submount and the first conductive semiconductor layer; And a heat dissipation layer disposed on a lower surface of the submount for emitting heat generated in the first bump and the second bump, wherein at least a part of the side surface of the light emitting element and a bottom And a surface of the light emitting device package is coupled to the conductive substrate.

It is still another object of the present invention to provide a light emitting device package including a first wire for applying a current to the first bump and a second wire for applying a current to the second bump.

In addition, the first bump and the second bump are electrically connected in series to each other.

Further, the first bump is a Bi-Te-Se light-emitting device package.

Further, the second bump is a Bi-Sb-Te light-emitting device package.

The light emitting device of the embodiment has a low external quantum efficiency (EQE) in general, and thus provides a light emitting device that prevents the temperature of the light emitting device from rising due to a large amount of heat emitted from the inside of the light emitting device.

It is another object of the present invention to provide a light emitting device that solves the problem that the lifetime of the light emitting device is reduced due to an increase in the temperature of the light emitting device.

The present invention also provides a light emitting device having a heat dissipating structure for preventing the temperature of the light emitting device from rising, thereby preventing the temperature of the light emitting device from rising, thereby prolonging the life of the light emitting device.

1 is a cross-sectional view of a conventional light emitting device.
2 is a cross-sectional view of an ultraviolet light-emitting device according to an embodiment.
3A to 3C are cross-sectional views illustrating a method of manufacturing the ultraviolet light emitting device illustrated in FIG.
4 is a cross-sectional view of an ultraviolet light-emitting device according to another embodiment having a flip-bonding structure.
5 is a cross-sectional view of a light emitting device package according to an embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to facilitate understanding of the present invention. However, the embodiments according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the invention are provided to more fully describe the present invention to those skilled in the art.

In the description of the embodiment according to the present invention, in the case of being described as being formed on the "upper" or "on or under" of each element, on or under includes both elements being directly contacted with each other or one or more other elements being indirectly formed between the two elements. Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

It is also to be understood that the terms "first" and "second", "upper" and "lower", etc., as used below, do not necessarily imply or imply any physical or logical relationship or order between such entities or elements And may be used only to distinguish one entity or element from another entity or element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

Fig. 2 shows a cross-sectional view of the ultraviolet light-emitting device 100A according to the embodiment.

The ultraviolet light emitting device 100A shown in FIG. 2 includes a substrate 110, a buffer layer 120, a light emitting structure 130, and first and second electrodes 142 and 144.

The substrate 110 may comprise a conductive material or a non-conductive material. For example, the substrate 110 may include at least one of sapphire (Al ₂ O ₃ ), GaN, SiC, ZnO, GaP, InP, Ga ₂ O ₃ , GaAs and Si.

A buffer layer (or transition layer) 120 may be disposed between the substrate 110 and the light emitting structure 130 to improve the thermal expansion coefficient difference and the lattice mismatch between the substrate 110 and the light emitting structure 130. The buffer layer 120 may include, but is not limited to, at least one material selected from the group consisting of Al, In, N, and Ga, for example. Further, the buffer layer 120 may have a single-layer structure or a multi-layer structure.

The light emitting structure 130 includes a first conductive semiconductor layer 132, an active layer 134, and a second conductive semiconductor layer 136 sequentially disposed on the buffer layer 120.

The first conductive semiconductor layer 132 is disposed on the buffer layer 120 and may be formed of a compound semiconductor such as a group III-V or II-VI doped with a first conductive dopant. When the first conductivity type semiconductor layer 132 is an n-type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, and Te as an n-type dopant.

For example, the first conductive semiconductor layer 132 may be formed of Al _x In _y Ga _(1-xy) N (0? X?? _{1, 0? Y ? 1} , 0? X + y? 1). ≪ / RTI > The first conductive semiconductor layer 132 may include one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The active layer 134 is disposed on the first conductivity type semiconductor layer 132 and injects electrons or holes injected through the first conductivity type semiconductor layer 132 and the second conductivity type semiconductor layer 136 (Or electrons) of the active layer 134 meet each other to emit light having energy determined by the energy band inherent in the material of the active layer 134. The active layer 134 may be at least one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure Can be formed.

The well layer / barrier layer of the active layer 134 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) But are not limited thereto. The well layer may be formed of a material having a band gap energy lower than the band gap energy of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 134. The conductive cladding layer may be formed of a semiconductor having a band gap energy higher than the band gap energy of the barrier layer of the active layer 134. [ For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. Further, the conductive clad layer may be doped with n-type or p-type.

According to the embodiment, the active layer 134 emits light in the ultraviolet wavelength band. Here, the ultraviolet wavelength band means a wavelength band of 100 nm to 400 nm. In particular, the active layer 134 can emit light in a wavelength band of 100 nm to 280 nm.

The second conductive semiconductor layer 136 is disposed on the active layer 134 and may be formed of a semiconductor compound. III-V, or II-VI group. For example, the second conductive type semiconductor layer 136 is _{In x Al y Ga 1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) Lt; RTI ID = 0.0 > of < / RTI > The second conductive type semiconductor layer 136 may be doped with a second conductive type dopant. When the second conductivity type semiconductor layer 136 is a p-type semiconductor layer, the second conductivity type dopant may be a p-type dopant including Mg, Zn, Ca, Sr, Ba and the like.

The first conductive semiconductor layer 132 may be an n-type semiconductor layer and the second conductive semiconductor layer 136 may be a p-type semiconductor layer. Alternatively, the first conductivity type semiconductor layer 132 may be a p-type semiconductor layer and the second conductivity type semiconductor layer 136 may be an n-type semiconductor layer.

The light emitting structure 130 may have any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

According to the embodiment, when the active layer 134 emits light in the ultraviolet wavelength band as described above, the second conductivity type semiconductor layer 136 may include the second conductivity type first semiconductor layer 136A and the second conductivity type And a second semiconductor layer 136C.

The second conductive type first semiconductor layer 136A is disposed on the active layer 134. [ Each of the second conductive type first semiconductor layer 136A and the first conductive type semiconductor layer 132 may include AlGaN. This is because AlGaN absorbs less light in the ultraviolet wavelength band than GaN or InAlGaN.

The second conductive type second semiconductor layer 136C is disposed on the second conductive type first semiconductor layer 136A. The second conductive type second semiconductor layer 136C improves the electrical characteristics of the ultraviolet light emitting device 100A by uniformly supplying holes from the second electrode 144 to the active layer 134. [ For example, the second conductive type second semiconductor layer 136B may include GaN or InAlGaN.

If the first conductivity type is n-type and the second conductivity type is p-type, the second conductive type first semiconductor layer 136A may serve as an electron blocking layer (EBL). Alternatively, the second conductive type first semiconductor layer 136A serving as the electron blocking layer may have an AlGaN / AlGaN super lattice layer structure or an AlGaN bulk layer structure.

The energy band gap of the second conductive type first semiconductor layer 136A is set such that the light emitted from the active layer 134 can be transmitted without being absorbed by the second conductive type first semiconductor layer 136A, Lt; RTI ID = 0.0 > of the < / RTI > For this, the content ratio of aluminum contained in the second conductive type first semiconductor layer 136A may be 0.3 or more, although it depends on the wavelength of the light emitted from the active layer 134.

In addition, the second conductivity type semiconductor layer 136 may further include a second conductivity type third semiconductor layer 136B. The second conductive type third semiconductor layer 136B is disposed between the second conductive type first semiconductor layer 136A and the second conductive type second semiconductor layer 136C. For example, the second conductive type third semiconductor layer 136B may include at least one AlGaN layer. Here, when the second conductive type third semiconductor layer 136B includes a plurality of AlGaN layers, the aluminum concentration of the plurality of AlGaN layers may have a gradient or may be modulated.

Meanwhile, the first electrode 142 is disposed on the first conductive type semiconductor layer 132 exposed by mesa etching. The first electrode 142 may include an ohmic contact material and may serve as an ohmic layer so that a separate ohmic layer (not shown) may not be required. Another ohmic layer may be formed under the first electrode 142 .

And the second electrode 144 is disposed on the second conductive type second semiconductor layer 136C. Each of the first and second electrodes 142 and 144 may reflect or transmit the light emitted from the active layer 134 without absorbing it and may be formed on the first and second conductivity type semiconductor layers 132 and 136 Or the like. For example, each of the first and second electrodes 142 and 144 may be formed of a metal such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It can be made in an optional combination.

In particular, the second electrode 144 may be a transparent conductive oxide (TCO). For example, the second electrode 144 may be formed of a metal material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO zinc oxide, indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / IrOx / Au / ITO, and the material is not limited thereto. The second electrode 144 may include a material that makes an ohmic contact with the second conductive GaN layer 126C.

Further, the second electrode 144 may be formed as a single layer or multiple layers of a reflective electrode material having an ohmic characteristic. If the second electrode 144 functions as an ohmic layer, a separate ohmic layer (not shown) may not be formed.

Hereinafter, a manufacturing method according to an embodiment of the ultraviolet light emitting device 100A illustrated in FIG. 2 will be described as follows. However, it is needless to say that the ultraviolet light emitting device 100A illustrated in FIG. 2 can be manufactured by other methods without being limited thereto.

3A to 3C are cross-sectional views illustrating a method of manufacturing the ultraviolet light emitting device 100A illustrated in FIG. 2 according to an embodiment of the present invention.

Referring to FIG. 3A, a buffer layer 120 is formed on a substrate 110.

The substrate 110 can be formed of a conductive or non-conductive material. If the substrate 110 is a silicon substrate, the light emitting structure 130 is easily cracked due to the difference in thermal expansion coefficient between the silicon and the nitride based light emitting structure layer 130 and the lattice mismatch, cracks may be generated. In order to prevent this, the buffer layer 120 may be selectively formed on the substrate 110. The buffer layer 120 may be formed of at least one material selected from the group consisting of, for example, Al, In, N and Ga, but is not limited thereto. In addition, the buffer layer 120 may be formed in the form of a single layer or a multilayer structure.

The buffer layer 120 is formed on the substrate 110 and then the first conductive semiconductor layer 132, the active layer 134, the second conductive semiconductor layer 136A, and the second conductive semiconductor layer 132 are formed on the buffer layer 120, The third semiconductor layer 136B is formed.

The first conductivity type semiconductor layer 132 may be formed of a III-V or II-VI compound semiconductor doped with the first conductivity type dopant, and the first conductivity type semiconductor layer 132 may be an n- The first conductivity type dopant may include Si, Ge, Sn, Se, and Te as an n-type dopant, but is not limited thereto.

The first conductivity type semiconductor layer 132 may be formed of Al _x In _y Ga _(1-xy) N (0? _{X ? 1, 0? Y ? 1} , 0? X + y? 1). ≪ / RTI > The first conductive semiconductor layer 132 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP. As described above, when the active layer 134 emits light in the ultraviolet wavelength band, the first conductivity type semiconductor layer 132 may be formed of AlGaN.

The active layer 134 may be formed of at least one of a single well structure, a multi-well structure, a single quantum well structure, a multiple quantum well structure, a quantum wire structure, or a quantum dot structure. For example, the active layer 134 may be formed by implanting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 134 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) But are not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be further formed on and / or below the active layer 134. The conductive cladding layer may be formed of a semiconductor having a band gap energy higher than the band gap energy of the barrier layer of the active layer 134. [ For example, the conductive clad layer may be formed of GaN, AlGaN, InAlGaN, superlattice structure, or the like. Further, the conductive clad layer may be doped with n-type or p-type.

The second conductive type first and third semiconductor layers 136A and 136B may be formed using a compound semiconductor such as a group III-V or II-VI group, and the second conductive type dopant may be doped. For example, by using a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) the 2 conductive type first and third semiconductor layers 136A and 136B can be formed. When the first and third semiconductor layers 136A and 136B are a p-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants . If light in the ultraviolet wavelength band is emitted from the active layer 134, each of the first and third semiconductor layers 136A and 136B of the second conductivity type may be formed of AlGaN.

Referring to FIG. 3B, the second conductive type semiconductor layer 136B is formed on the second conductive type third semiconductor layer 136B with a thickness t of 50 nm to 150 nm at a slow rate of 4 ANGSTROM / sec, for example, Type second semiconductor layer 136C is grown. The second conductive type second semiconductor layer 136C may be formed using GaN or InAlGaN.

3C, a part of the first conductivity type semiconductor layer 132, the active layer 134, and the first to third semiconductor layers 136A, 136B and 136C of the second conductivity type is subjected to a mesa etching process Thereby exposing a part of the one conductivity type semiconductor layer 132.

2, a first electrode 142 is formed on the exposed first conductivity type semiconductor layer 132 and a second electrode 142 is formed on the second conductive type second semiconductor layer 136C. Two electrodes 144 are formed. Each of the first and second electrodes 142 and 144 may reflect or transmit the light emitted from the active layer 134 without absorbing it and may be formed on the first and second conductivity type semiconductor layers 132 and 136 Lt; RTI ID = 0.0 > a < / RTI > For example, each of the first and second electrodes 142 and 144 may be formed of a metal such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It can be made in an optional combination.

In particular, the second electrode 144 may be formed of a transparent conductive oxide (TCO). For example, the second electrode 144 may be formed of a metal material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO zinc oxide, indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / IrOx / Au / ITO, and the material is not limited to these materials.

Further, the second electrode 144 may be formed as a single layer or multiple layers of a reflective electrode material having an ohmic characteristic. If the second electrode 144 functions as an ohmic layer, a separate ohmic layer (not shown) may not be formed.

On the other hand, the ultraviolet light emitting device 100A according to the embodiment illustrated in FIG. 2 has a horizontal structure, but the embodiment is not limited thereto. That is, according to another embodiment, the ultraviolet light emitting device may have a vertical type or a flip bonding structure.

Fig. 4 shows a cross-sectional view of an ultraviolet light-emitting device 100B according to another embodiment having a flip-bonding structure.

Light emitted from the active layer 134 is emitted through the second conductive type semiconductor layer 136 and the second electrode 144 because the ultraviolet light emitting device 100A illustrated in FIG. 2 has a horizontal structure. The first conductivity type semiconductor layer 132, the buffer layer 120, and the substrate 110 are made of a light-transmitting material and the second conductivity type semiconductor layer 136 and the second electrode 144 are made of a light- And may be made of a material having non-light-transmitting property.

However, since the ultraviolet light emitting device 100B illustrated in FIG. 4 has a flip-chip bonding structure, light emitted from the active layer 134 is incident on the substrate 110, the buffer layer 120, and the first conductivity type semiconductor layer 132 . For this, the substrate 110, the buffer layer 120, and the first conductivity type semiconductor layer 132 are made of a light-transmitting material, and the second conductivity type semiconductor layer 136 and the second electrode 144 are transparent And may be made of a material having non-transparency.

Unlike the ultraviolet light emitting device 100A illustrated in FIG. 2, since the ultraviolet light emitting device 100B illustrated in FIG. 8 has a flip chip bonding structure, the first and second bumps 162A and 162B, the submount 164 A heat dissipation layer 166, and first and second metal layers (or electrode pads) 168A and 168B. Except for these differences, since the ultraviolet light emitting device 100B illustrated in FIG. 8 is the same as the ultraviolet light emitting device 100A illustrated in FIG. 2, the same reference numerals are used for the overlapped portions, and a detailed description thereof will be omitted .

The submount 164 may be formed of a semiconductor substrate such as AlN, BN, SiC, GaN, GaAs, Si, or the like, and may be formed of a semiconductor material having excellent thermal conductivity. In addition, an element for preventing electrostatic discharge (ESD) in the form of a Zener diode may be included in the submount 164.

The first and second metal layers 168A and 168B are disposed horizontally spaced apart from each other on the submount 164. The first bump 162A is disposed between the first metal layer 168A and the first electrode 142 and the second bump 162B is disposed between the second metal layer 168B and the second electrode 144. [

The first electrode 142 is connected to the first metal layer 168A of the submount 164 via the first bump 162A and the second electrode 144 is connected to the submount 164 via the second bump 162B. Of the second metal layer 168B.

Although not shown, a first upper bump metal layer (not shown) is further disposed between the first electrode 142 and the first bump 162A and a second upper bump metal layer (not shown) is disposed between the first metal layer 168A and the first bump 162A A first lower bump metal layer (not shown) may be further disposed. Here, the first upper bump metal layer and the first lower bump metal layer serve to indicate the position where the first bump 162A is to be located. Similarly, a second upper bump metal layer (not shown) is further disposed between the second electrode 144 and the second bump 162B, and a second lower bump metal layer (not shown) is disposed between the second metal layer 168B and the second bump 162B. A metal layer (not shown) may be further disposed. Here, the second upper bump metal layer and the second lower bump metal layer serve to indicate the position where the second bump 162B is to be positioned.

If the submount 164 is formed of a material having electrical conductivity such as Si, a heat dissipation layer (not shown) may be formed between the first and second metal layers 168A and 168B and the submount 164 as illustrated in FIG. 166 may be further disposed.

As described above, the conventional ultraviolet light emitting device has a low external quantum efficiency (EQE), and thus the amount of heat generated inside the light emitting device is large.

Heat is mainly generated in the first bump 162A and the second bump 162B and the heat generated in the first bump 162A and the second bump 162B does not move to raise the temperature inside the light emitting device .

To solve this problem, it is necessary to provide a heat dissipating structure for allowing heat generated in the first bump 162A and the second bump 162B to move to the submount 164.

Accordingly, the light emitting device of the embodiment may further include a heat dissipation layer 166 below the submount 164.

In order to allow the heat generated in the first bump 162A and the second bump 162B to move through the submount 164 to the heat dissipation layer 166 disposed below the submount 164, The first bump 162A and the second bump 162B may be electrically connected in series.

The light emitting device of the embodiment has the first bump 162A and the second bump 162B electrically connected in series by using the Peltier effect and the first bump 162A and the second bump 162B by parallel connection in terms of heat conduction, Can be configured to move toward the sub mount 164 and the heat dissipation layer 166.

The first bump 162A may be provided to connect the positive electrode and the second bump 162B may be provided to connect the negative electrode.

In addition, the first bump 162A may be connected to the (-) electrode and the second bump 162B may be connected to the (+) electrode.

That is, it suffices that the first bump 162A and the second bump 162B have opposite electrodes connected to each other and the first bump 162A and the second bump 162B are electrically connected in series.

Therefore, the light emitting device of the embodiment satisfies only the above-mentioned conditions and the detailed structure can be changed according to the needs of the user, and does not limit the scope of the right of the present invention.

The first bump 162A may be made of Bi-Te-Se.

Since the first bump 162A is made of Bi-Te-Se, the heat generated in the first bump 162A can be more efficiently moved toward the heat dissipation layer 166. [

And the second bump 162B may be made of Bi-Sb-Te.

Since the second bumps 162B are made of Bi-Sb-Te, the heat generated in the second bumps 162B can be more efficiently moved toward the heat dissipation layer 166. [

5 is a cross-sectional view of a light emitting device package 200 according to an embodiment.

The light emitting device package 200 according to the embodiment includes the light emitting device 100B, the substrate 210, the first and second package bodies 220A and 220B, the insulator 230, the first and second wires 242 and 244 And a molding member 250. The light emitting device 100B is the same as the light emitting device illustrated in FIG. 4, and the same reference numerals are used to omit a detailed description thereof.

The first and second package bodies 220A and 220B are disposed on the substrate 210. Here, the substrate 210 may be, but is not limited to, a printed circuit board (PCB). The first and second package bodies 220A and 220B may be made of aluminum, but are not limited thereto, in order to improve heat radiation characteristics when the light emitting device 100B emits ultraviolet light.

Although the submount 164 is shown as being disposed on the second package body 220B in Fig. 5, the embodiment is not limited to this. That is, the submount 164 may be disposed on the first package body 220A instead of the second package body 220B. The first and second metal layers 168A and 168B of the ultraviolet light emitting device 100B are connected to the first and second package bodies 220A and 220B by the first and second wires 242 and 244, respectively. When the first and second package bodies 220A and 220B are formed of an aluminum material having electrical conductivity, the insulator 230 electrically separates the first package body 220A and the second package body 220B from each other It plays a role.

The first conductive semiconductor layer 132 is electrically connected to the substrate 210 through the first electrode 142, the first bump 162A, the first metal layer 168A, the first wire 242 and the first package body 220A. As shown in FIG. The second conductive semiconductor layer 136 is electrically connected to the second electrode 144 through the second electrode 144, the second bump 162B, the second metal layer 168B, the second wire 244 and the second package body 220B. (Not shown).

The molding member 250 may be filled in a cavity formed by the first and second package bodies 220A and 220B to surround and protect the ultraviolet light emitting device 100B. In addition, the molding member 250 may include a phosphor to change the wavelength of the light emitted from the ultraviolet light emitting device 100B.

A plurality of light emitting device packages according to the embodiments may be arrayed on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit.

Further, the display device, the indicating device, and the lighting device including the light emitting device package according to the embodiment can be realized.

Here, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module for emitting light, a light guide plate disposed in front of the reflector for guiding light emitted from the light emitting module forward, An image signal output circuit connected to the display panel and supplying an image signal to the display panel; and a color filter disposed in front of the display panel, . Here, the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

In addition, the illumination device may include a light source module including a substrate and a light emitting device package according to an embodiment, a heat sink for dissipating heat of the light source module, and a power supply unit for processing or converting an electric signal provided from the outside, . For example, the lighting device may include a lamp, a head lamp, or a streetlight.

The head lamp includes a light emitting module including light emitting device packages disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, a lens for refracting light reflected by the reflector forward And a shade that reflects off or reflects a portion of the light reflected by the reflector and directed to the lens to provide the designer with a desired light distribution pattern.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100, 200a, 200b: light emitting device 120, 220: light emitting structure
122, 222: first conductivity type semiconductor layers 124, 224: active layer
126, 226: second conductivity type semiconductor layer 132: first electrode
136: second pole 232: first conductive layer
233: penetrating electrode 236: second conductive layer
236a, 236b: a second electrode 240: an ohmic layer
250: Reflective layer 260: Channel
270: conductive supporting substrate 280: passivation layer
285: insulating layer 300: conductive substrate
310: solder 320: dielectric layer
330: pad 340: wire
350: molding part

Claims (10)

Board;
A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate;
A submount for supporting the light emitting structure;
A first bump electrically connecting the submount and the first conductive semiconductor layer;
A second bump electrically connecting the submount and the second conductive semiconductor layer; And
And a heat dissipation layer disposed on a lower surface of the submount to emit heat generated in the first bump and the second bump. The method according to claim 1,
Wherein the first bump and the second bump are electrically connected in series. 3. The method of claim 2,
A first wire for applying a current to the first bump; And
And a second wire for applying a current to the second bump,
Wherein the first wire and the second wire are opposite in polarity to each other. The method according to claim 1,
Wherein the first bump is made of Bi-Te-Se. The method according to claim 1,
And the second bump is made of Bi-Sb-Te. A grooved conductive substrate; And
And a light emitting element, at least a part of which is inserted into the groove of the conductive substrate,
The light-
Board;
A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate;
A submount for supporting the light emitting structure;
A first bump electrically connecting the submount and the first conductive semiconductor layer;
A second bump electrically connecting the submount and the second conductive semiconductor layer; And
And a heat dissipation layer disposed on a lower surface of the submount to emit heat generated in the first bump and the second bump,
And at least a part of a side surface of the light emitting device and a bottom surface are coupled to the conductive substrate. The method according to claim 6,
A first wire for applying a current to the first bump; And
And a second wire for applying a current to the second bump. 8. The method of claim 7,
Wherein the first bump and the second bump are electrically connected in series. The method according to claim 6,
And the first bump is made of Bi-Te-Se. The method according to claim 6,
And the second bump is made of Bi-Sb-Te.

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