KR20170022097A - ETCHANT COMPOSITION FOR ETHCING TiN LAYER AND METHOD FOR FORMING METAL LINE USING THE SAME - Google Patents
ETCHANT COMPOSITION FOR ETHCING TiN LAYER AND METHOD FOR FORMING METAL LINE USING THE SAME Download PDFInfo
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Abstract
Description
본 발명은 Ti-Al계 합금막의 식각액 조성물 및 그를 이용한 금속배선의 형성 방법에 관한 것이다. The present invention relates to an etchant composition of a Ti-Al-based alloy film and a method of forming a metal wiring using the same.
전자재료분야에서 베리어 층(barrier layer)의 형성 등에 사용되는 Ti-Al계 합금막의 사용은 점차 확대되고 있다. 그러나, TiAl막, TiAlC막, TiAlN막, TiAlCr막 등의 Ti-Al계 합금막을 식각할 수 있는 효과적인 식각액 조성물은 알려져 있지 않다. 특히, W막이나 TiN막질을 손상시키지 않고 Ti-Al계 합금막을 선택적으로 식각할 수 있는 식각액 조성물의 개발은 시급히 요구되고 있다.The use of a Ti-Al-based alloy film used for forming a barrier layer in the field of electronic materials has been gradually expanded. However, an effective etchant composition capable of etching a Ti-Al alloy film such as a TiAl film, a TiAlC film, a TiAlN film, and a TiAlCr film is not known. In particular, it is urgently required to develop an etchant composition capable of selectively etching a Ti-Al alloy film without damaging the W film or the TiN film.
일본 특개 제2012-36488호Japan Special Publication 2012-36488
본 발명은 Ti-Al계 합금막을 효과적으로 식각할 수 있는 Ti-Al계 합금막 식각액 조성물을 제공하는 것을 목적으로 한다. An object of the present invention is to provide a Ti-Al-based alloy film etchant composition capable of effectively etching a Ti-Al-based alloy film.
또한, 본 발명은 W막이나 TiN막질을 손상시키지 않고 Ti-Al계 합금막을 선택적으로 식각할 수 있는 Ti-Al계 합금막 식각액 조성물을 제공하는 것을 목적으로 한다.Another object of the present invention is to provide a Ti-Al alloy film etching liquid composition capable of selectively etching a Ti-Al alloy film without damaging the W film or the TiN film.
조성물 총중량에 대하여,For the total weight of the composition,
(A) 하기 화학식 1로 표시되는 불화암모늄염 화합물 1~10 중량%, (A) 1 to 10% by weight of an ammonium fluoride salt compound represented by the following formula (1)
(B) 2개 이상의 카르복실기를 포함하는 유기산 1~10 중량%,(B) 1 to 10% by weight of an organic acid containing two or more carboxyl groups,
(C) 무기암모늄염 0.01~3 중량%, 및(C) 0.01 to 3% by weight of an inorganic ammonium salt, and
(D) 잔량의 물을 포함하는 Ti-Al계 합금막 식각액 조성물을 제공한다:(D) a residual amount of water, wherein the Ti-Al-
상기 식에서In the above formula
R1, R2, R3, 및 R4는 각각 독립적으로 수소 또는 탄소수 1 내지 10의 직쇄 또는 분지쇄의 알킬기이며,R1, R2, R3, and R4 are each independently hydrogen or a straight or branched alkyl group having 1 to 10 carbon atoms,
n은 0 또는 1이다.n is 0 or 1;
또한, 본 발명은In addition,
하부 금속막 또는 금속배선으로서 텅스텐(W) 또는 TiN을 포함하는 금속막 또는 금속배선을 포함하는 기판상에 Ti-Al계 합금막을 형성하는 방법에 있어서, A method of forming a Ti-Al-based alloy film on a substrate including a metal film or metal wiring including tungsten (W) or TiN as a lower metal film or metal wiring,
상기 텅스텐(W) 또는 TiN을 포함하는 금속막 또는 금속배선에 대하여 상기 Ti-Al계 합금막을 선택적으로 식각하는 단계를 포함하며, 상기 식각단계는 청구항 1 내지 청구항 6 중 어느 한 항의 식각액을 사용하여 이루어지는 것을 특징으로 하는 금속배선의 형성 방법을 제공한다. And selectively etching the Ti-Al-based alloy film with respect to a metal film or metal wiring including tungsten (W) or TiN, wherein the etching step is performed using the etching solution of any one of claims 1 to 6 And forming a metal wiring layer on the metal wiring layer.
본 발명의 Ti-Al계 합금막 식각용 조성물은 Ti-Al계 합금막에 대한 효율적인 습식식각을 가능하게 하며, Ti-Al계 합금막의 식각시 W막이나 TiN막질을 손상시키지 않기 때문에 매우 유용하게 사용될 수 있다. The composition for etching a Ti-Al alloy film of the present invention makes it possible to efficiently wet-etch a Ti-Al-based alloy film and is very useful because it does not damage the W film or TiN film during etching of a Ti-Al alloy film Can be used.
본 발명은, 조성물 총중량에 대하여, (A) 하기 화학식 1로 표시되는 하기 화학식 1로 표시되는 불화암모늄염 화합물 1~10 중량%, (B) 2개 이상의 카르복실기를 포함하는 유기산 1~10 중량%, (C) 무기암모늄염 0.01~3 중량%, 및 (D) 잔량의 물을 포함하는 Ti-Al계 합금막 식각액 조성물에 관한 것이다:(A) 1 to 10% by weight of an ammonium fluoride salt compound represented by the following formula (1), (B) 1 to 10% by weight of an organic acid containing two or more carboxyl groups, (C) an inorganic ammonium salt in an amount of 0.01 to 3% by weight, and (D) a residual amount of water.
[화학식 1][Chemical Formula 1]
상기 식에서In the above formula
R1, R2, R3, 및 R4는 각각 독립적으로 수소 또는 탄소수 1 내지 10의 직쇄 또는 분지쇄의 알킬기이며,R1, R2, R3, and R4 are each independently hydrogen or a straight or branched alkyl group having 1 to 10 carbon atoms,
n은 0 또는 1이다.n is 0 or 1;
상기 Ti-Al계 합금막은 Ti 및 Al을 포함하는 합금으로 이루어진 막을 의미하며, 대표적인 예로는 TiAl막, TiAlC막, TiAlN막, TiAlCr막 등을 들 수 있다. 본 발명의 식각액은 이들 중에서 특히 TiAlC막, TiAlN막에 바람직하게 사용될 수 있다.The Ti-Al-based alloy film means a film made of an alloy containing Ti and Al, and representative examples thereof include TiAl film, TiAlC film, TiAlN film, TiAlCr film, and the like. Among them, the etching solution of the present invention can be suitably used for TiAlC film, TiAlN film in particular.
상기 Ti-Al계 합금막 식각액 조성물은 특히, 텅스텐(W) 또는 TiN을 포함하는 금속막 또는 금속배선의 존재하에서 Ti-Al계 합금막의 선택적 식각을 위하여 유용하게 사용될 수 있다. The Ti-Al-based alloy etchant composition can be particularly useful for selective etching of a Ti-Al-based alloy film in the presence of a metal film containing tungsten (W) or TiN or a metal wiring.
본 발명의 Ti-Al계 합금막 식각액 조성물에 있어서, 상기 (A) 화학식 1로 표시되는 불화암모늄염 화합물은 식각 기능을 수행한다:In the Ti-Al-based alloy film etchant composition of the present invention, the ammonium fluoride salt compound represented by formula (1) (A) performs an etching function:
상기 화학식 1로 표시되는 불화암모늄염 화합물로는 불화암모늄염, 중불화암모늄염, 불화알킬암모늄염 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상을 조합하여 사용될 수 있다. Examples of the ammonium fluoride salt compound represented by the above formula (1) include ammonium fluoride, a neutralized ammonium salt, and an alkyl fluoride ammonium salt, and these may be used alone or in combination of two or more.
상기 불화알킬암모늄염으로는 대표적으로 테트라메틸암모늄플루오라이드, 테트라에틸암모늄플루오라이드, 테트라프로필암모늄플루오라이드, 테트라부틸암모늄플루오라이드 등을 들 수 있다. The fluoroalkylammonium salts are typically tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride, and the like.
상기 화학식 1로 표시되는 불화암모늄염 화합물로는 특히, 암모늄플루오라이드, 테트라메틸암모늄플루오라이드, 테트라부틸암모늄플루오라이드 등이 바람직하게 사용될 수 있다. As the fluorinated ammonium salt compound represented by the above formula (1), ammonium fluoride, tetramethylammonium fluoride, tetrabutylammonium fluoride and the like can be preferably used.
본 발명의 식각액 조성물에서 (A) 화학식 1로 표시되는 불화암모늄염은 조성물 총 중량에 대하여, 1 내지 10 중량%로 포함될 수 있으며, 더욱 바람직하게는 1 내지 8중량%로 포함되는 것이 좋다. 불화암모늄염 함량이 1 중량% 미만으로 포함되면 Ti-Al계 합금막의 식각속도가 감소되며, 10중량%를 초과하여 포함되면 보호막질인 W(tungsten)막 및 TiN(titanium nitride) 막질의 식각속도가 현저히 증가한다.In the etching solution composition of the present invention, (A) the ammonium fluoride salt represented by the formula (1) may be contained in an amount of 1 to 10% by weight, more preferably 1 to 8% by weight, based on the total weight of the composition. If the content of the ammonium fluoride salt is less than 1 wt%, the etching rate of the Ti-Al based alloy film is reduced. If the amount of the ammonium fluoride salt is more than 10 wt%, the etching rate of the tungsten (W) Increase significantly.
본 발명의 식각액 조성물에서 상기 (B) 2개 이상의 카르복실기를 포함하는 유기산은 조성물의 pH를 조절함과 동시에 Ti-Al계 합금막의 식각 속도를 조절한다. In the etchant composition of the present invention, (B) the organic acid containing two or more carboxyl groups controls the pH of the composition and simultaneously controls the etching rate of the Ti-Al alloy film.
상기 2개 이상의 카르복실기를 포함하는 유기산으로는 옥살산 (Oxalic acid), 시트르산 (Citric acid), 타타르산(Tartaric acid), 숙신산 (succinic acid) 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상을 조합하여 사용될 수 있다. 특히, 옥살산, 시트르산 등이 바람직하게 사용될 수 있다.Examples of the organic acid having two or more carboxyl groups include oxalic acid, citric acid, tartaric acid and succinic acid. These organic acids may be used singly or in combination of two or more kinds. May be used in combination. In particular, oxalic acid, citric acid and the like can be preferably used.
본 발명의 식각액 조성물에서 2개 이상의 카르복실기를 포함하는 유기산은 조성물의 총 중량에 대하여, 1 내지 10 중량%로 포함될 수 있으며, 더욱 바람직하게는 2 내지 5 중량%로 포함되는 것이 좋다. 2개 이상의 카르복실기를 포함하는 유기산은 1 중량% 미만으로 포함되면 Ti-Al계 합금막의 식각속도가 감소되며, 10중량%를 초과하면 Ti-Al계 합금막의 식각속도가 증가하는 동시에 W(tungsten)의 식각이 현저히 증가한다.In the etchant composition of the present invention, the organic acid containing two or more carboxyl groups may be contained in an amount of 1 to 10% by weight, more preferably 2 to 5% by weight, based on the total weight of the composition. When the content of the organic acid containing two or more carboxyl groups is less than 1% by weight, the etching rate of the Ti-Al-based alloy film is decreased. When the content of the organic acid is more than 10% by weight, Lt; RTI ID = 0.0 > significantly < / RTI >
본 발명의 식각액 조성물에서 상기 (C) 무기암모늄염은 W막 및 TiN막질에 대한 식각을 억제하는 기능을 수행한다. In the etchant composition of the present invention, the inorganic ammonium salt (C) performs the function of suppressing the etching for the W film and the TiN film.
상기 무기암모늄염으로는 인산암모늄, 황산암모늄, 초산암모늄, 질산암모늄, 붕산암모늄, 암모늄시트레이트, 암모늄옥살레이트, 암모늄포메이트, 암모늄카보네이트 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상을 조합하여 사용할 수 있다.Examples of the inorganic ammonium salt include ammonium phosphate, ammonium sulfate, ammonium acetate, ammonium nitrate, ammonium borate, ammonium citrate, ammonium oxalate, ammonium formate and ammonium carbonate. Can be used in combination.
특히, 인산암모늄, 황산암모늄, 초산암모늄 등이 바람직하게 사용될 수 있다. Particularly, ammonium phosphate, ammonium sulfate, ammonium acetate and the like can be preferably used.
상기 무기암모늄염은 상기 (A) 화학식 1로 표시되는 하기 화학식 1로 표시되는 불화암모늄염 화합물을 제외한 무기암모늄염을 의미한다.The inorganic ammonium salt means an inorganic ammonium salt except for the ammonium fluoride salt compound represented by the following general formula (1) represented by the general formula (1).
상기 무기암모늄염은 조성물 총 중량에 대하여, 0.01~3 중량%로 포함될 수 있으며, 더욱 바람직하게는 0.05 내지 1 중량%로 포함되는 것이 좋다. 무기암모늄염이 0.01 중량% 미만으로 포함되면 W막 및 TiN막질에 대한 식각억제 기능이 부족해지며, 3 중량%를 초과하면 Ti-Al계 합금막의 식각속도를 낮추는 문제를 야기할 수 있다.The inorganic ammonium salt may be contained in an amount of 0.01 to 3% by weight, more preferably 0.05 to 1% by weight based on the total weight of the composition. When the inorganic ammonium salt is contained in an amount less than 0.01% by weight, the etching inhibition function of the W film and the TiN film is insufficient, while if it exceeds 3% by weight, the etching rate of the Ti-Al type alloy film may be lowered.
본 발명의 조성물은 상기 기재된 성분을 이외에 (D)잔량의 물을 함유하는 것을 특징으로 한다. 물은 상기 화합물을 용해하는 역할을 한다.The composition of the present invention is characterized by containing, in addition to the components described above, (D) a residual amount of water. Water serves to dissolve the compound.
본 발명의 조성물에는 전술한 성분 이외에 통상의 첨가제를 더 첨가할 수 있으며, 첨가제로는 부식방지제, 금속이온 봉쇄제, 계면활성제 등을 들 수 있다. 또한, 상기 첨가제는 이에만 한정되지 않으며, 발명의 효과를 더욱 양호하게 하기 위하여, 이 분야에 공지되어 있는 여러 다른 첨가제들을 선택하여 사용할 수도 있다.In addition to the above-mentioned components, conventional additives may further be added to the composition of the present invention. Examples of additives include corrosion inhibitors, metal ion sequestrants, surfactants and the like. In addition, the additive is not limited thereto, and various other additives known in the art may be selected and used for better effect of the invention.
본 발명에서 사용되는 (A) 화학식 1로 표시되는 불화암모늄염, (B) 2개 이상의 카르복실기를 포함하는 유기산, (C) 무기암모늄염, 첨가제 등은 통상적으로 공지된 방법에 의해서 제조가 가능하며, 본 발명의 식각용 조성물은 반도체 공정용의 순도를 가지는 것이 바람직하다. (A) an ammonium fluoride salt represented by the formula (1), (B) an organic acid containing two or more carboxyl groups, (C) an inorganic ammonium salt, an additive and the like which are used in the present invention can be prepared by a conventionally known method, The etching composition of the invention preferably has purity for semiconductor processing.
또한, 본 발명은 In addition,
하부 금속막 또는 금속배선으로서 텅스텐(W) 또는 TiN을 포함하는 금속막 또는 금속배선을 포함하는 기판상에 Ti-Al계 합금막을 형성하는 방법에 있어서, 상기 텅스텐(W) 또는 TiN을 포함하는 금속막 또는 금속배선에 대하여 상기 Ti-Al계 합금막을 선택적으로 식각하는 단계를 포함하며, 상기 식각단계는 상기 본 발명의 식각액을 사용하여 이루어지는 것을 특징으로 하는 금속배선의 형성 방법에 관한 것이다.A method of forming a Ti-Al-based alloy film on a substrate including a metal film or metal wiring including tungsten (W) or TiN as a lower metal film or a metal wiring, And selectively etching the Ti-Al-based alloy film with respect to the metal film or the metal wiring, wherein the etching step is performed using the etching solution of the present invention.
상기 Ti-Al계 합금막 식각액 조성물에 관하여 기술된 내용은 상기 금속배선의 형성 방법에 대하여 그대로 적용될 수 있다.The content of the Ti-Al alloy film etchant composition described above can be directly applied to the method of forming the metal wiring.
이하에서, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나, 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 하기의 실시예는 본 발명의 범위 내에서 당업자에 의해 적절히 수정, 변경될 수 있다. Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.
실시예Example 1~8 및 1 to 8 and 비교예Comparative Example 1~ 1 ~ 4: Ti4: Ti -- Al계Al system 합금막Alloy film 식각액Etchant 조성물의 제조 Preparation of composition
하기 표 1에 기재된 성분들을 해당 성분으로 혼합하여 실시예 1~8 및 비교예 1~4의 Ti-Al계 합금막 식각액 조성물을 제조하였다. The Ti-Al based alloy film etchant compositions of Examples 1 to 8 and Comparative Examples 1 to 4 were prepared by mixing the components listed in Table 1 with the respective components.
(단위: 중량%)(Unit: wt%)
1) A-1 : 암모늄플루라이드 (Ammonium fluoride)1) A-1: Ammonium fluoride
2) A-2 : 테트라부틸암모늄플루라이드 (Tetrabutylammonium fluoride)2) A-2: Tetrabutylammonium fluoride
3) B-1 : 옥살산 (Oxalic acid)3) B-1: Oxalic acid
4) B-2 : 시트르산 (Citric acid)4) B-2: Citric acid
5) B-3 : 아세트산 (Acetic acid)5) B-3: Acetic acid
6) C-1 : 암모늄 설페이트 (Ammonium sulfate)6) C-1: Ammonium sulfate
7) C-2 : 암모늄 포스페이트 (Ammonium phosphate)7) C-2: Ammonium phosphate
시험예Test Example : : 식각특성Etch characteristics 평가 evaluation
실리콘 웨이퍼 위에 TiAlC막, 텅스텐막(W), 질화티타늄막(TiN)이 각각 단일막으로 증착된 웨이퍼를 준비하였다. 상기의 웨이퍼 기판을 2x2cm 크기로 샘플링하여, 표 1의 식각액 조성물을 60℃로 승온시킨 후, 상기 기판을 상기 승온된 식각액 조성물에 1분간 침적하였다. 초순수(DIW)로 세정한 후 Ellipsometer(SE-MG-1000)와 SEM을 통해 막두께의 변화를 측정하여 식각 속도를 계산하고 그 결과를 하기 표 2에 나타냈다. A wafer on which a TiAlC film, a tungsten film (W), and a titanium nitride film (TiN) were respectively deposited as a single film on a silicon wafer was prepared. The wafer substrate was sampled at a size of 2x2 cm, the temperature of the etchant composition of Table 1 was raised to 60 ° C, and the substrate was immersed in the heated etchant composition for one minute. The etching rate was calculated by measuring changes in film thickness through an Ellipsometer (SE-MG-1000) and SEM after cleaning with DIW. The results are shown in Table 2 below.
상기 표 2에 나타난 바와 같이, 본 발명의 식각액 조성물인 실시예 1 내지 8의 Ti-Al계 합금막 식각액 조성물은 TiAlC막에 대한 식각속도가 우수하였다. 또한, W막 및 TiN막에 대한 식각속도는 매우 느리기 때문에 TiAlC막의 식각시 W막 및 TiN막에 대한 손상은 무시할 정도임을 알 수 있었다. As shown in Table 2, the etching compositions of the Ti-Al based alloy films of Examples 1 to 8, which are the etching solution compositions of the present invention, exhibited excellent etching rates for TiAlC films. In addition, since the etching rate for the W film and the TiN film is very slow, the damage to the W film and the TiN film during the etching of the TiAlC film is negligible.
반면, 비교예 1 내지 4의 Ti-Al계 합금막 식각액 조성물은 TiAlC막에 대한 식각속도가 너무 느리거나, W막 또는 TiN막에 대한 식각속도는 너무 빠르기 때문에 TiAlC막의 식각에 적용하기 어려운 것을 확인하였다. On the other hand, the etching compositions of the Ti-Al based alloy films of Comparative Examples 1 to 4 were found to be difficult to apply to the etching of the TiAlC film because the etching rate for the TiAlC film was too slow or the etching rate for the W film or the TiN film was too fast Respectively.
Claims (7)
(A) 하기 화학식 1로 표시되는 불화암모늄염 화합물 1~10 중량%,
(B) 2개 이상의 카르복실기를 포함하는 유기산 1~10 중량%,
(C) 무기암모늄염 0.01~3 중량%, 및
(D) 잔량의 물을 포함하는 Ti-Al계 합금막 식각액 조성물:
[화학식 1]
상기 식에서
R1, R2, R3, 및 R4는 각각 독립적으로 수소 또는 탄소수 1 내지 10의 직쇄 또는 분지쇄의 알킬기이며,
n은 0 또는 1이다.For the total weight of the composition,
(A) 1 to 10% by weight of an ammonium fluoride salt compound represented by the following formula (1)
(B) 1 to 10% by weight of an organic acid containing two or more carboxyl groups,
(C) 0.01 to 3% by weight of an inorganic ammonium salt, and
(D) Ti-Al-based alloy film etchant composition comprising a residual amount of water:
[Chemical Formula 1]
In the above formula
R1, R2, R3, and R4 are each independently hydrogen or a straight or branched alkyl group having 1 to 10 carbon atoms,
n is 0 or 1;
상기 Ti-Al계 합금막 식각액 조성물은 텅스텐(W) 또는 TiN을 포함하는 금속막 또는 금속배선의 존재하에서 Ti-Al계 합금막의 선택적 식각을 위하여 사용되는 것을 특징으로 하는 Ti-Al계 합금막 식각액 조성물. The method according to claim 1,
Wherein the Ti-Al-based alloy film etching composition is used for selective etching of a Ti-Al-based alloy film in the presence of a metal film containing tungsten (W) or TiN or a metal wiring. Composition.
상기 (A) 화학식 1로 표시되는 불화암모늄염 화합물은 불화암모늄염, 중불화암모늄염 및 불화알킬암모늄염으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 Ti-Al계 합금막 식각액 조성물. The method according to claim 1,
Wherein the ammonium fluoride salt compound represented by the formula (A) comprises at least one selected from the group consisting of ammonium fluoride, a phosphorylated ammonium salt, and an alkyl fluoride ammonium salt.
상기 (B) 2개 이상의 카르복실기를 포함하는 유기산은 옥살산(Oxalic acid), 시트르산(Citric acid), 및 타타르산(Tartaric acid)으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 Ti-Al계 합금막 식각액 조성물. The method according to claim 1,
The organic acid (B) containing two or more carboxyl groups includes at least one selected from the group consisting of oxalic acid, citric acid, and tartaric acid. Al alloy film etchant composition.
상기 (C) 무기암모늄염은 인산암모늄, 황산암모늄, 초산암모늄, 질산암모늄, 붕산암모늄, 암모늄시트레이트, 암모늄옥살레이트, 암모늄포메이트, 및 암모늄카보네이트로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 Ti-Al계 합금막 식각액 조성물.The method according to claim 1,
The inorganic ammonium salt (C) includes at least one selected from the group consisting of ammonium phosphate, ammonium sulfate, ammonium acetate, ammonium nitrate, ammonium borate, ammonium citrate, ammonium oxalate, ammonium formate, and ammonium carbonate Wherein the Ti-Al-based alloy film etchant composition is a Ti-Al-based alloy film etchant composition.
상기 Ti-Al계 합금막은 TiAl막, TiAlC막, TiAlN막, 및 TiAlCr막으로 이루어진 군으로부터 선택되는 것을 특징으로 하는 Ti-Al계 합금막 식각액 조성물.The method according to claim 1,
Wherein the Ti-Al-based alloy film is selected from the group consisting of a TiAl film, a TiAlC film, a TiAlN film, and a TiAlCr film.
상기 텅스텐(W) 또는 TiN을 포함하는 금속막 또는 금속배선에 대하여 상기 Ti-Al계 합금막을 선택적으로 식각하는 단계를 포함하며, 상기 식각단계는 청구항 1 내지 청구항 6 중 어느 한 항의 식각액을 사용하여 이루어지는 것을 특징으로 하는 금속배선의 형성 방법.A method of forming a Ti-Al-based alloy film on a substrate including a metal film or metal wiring including tungsten (W) or TiN as a lower metal film or metal wiring,
And selectively etching the Ti-Al-based alloy film with respect to a metal film or metal wiring including tungsten (W) or TiN, wherein the etching step is performed using the etching solution of any one of claims 1 to 6 Wherein the metal wiring is formed by a sputtering method.
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