KR20170020681A

KR20170020681A - Sputtering device for communication filter and method for forming a thin film filter Communications using the same

Info

Publication number: KR20170020681A
Application number: KR1020150115004A
Authority: KR
Inventors: 전진국; 박성규; 유영상; 김종천
Original assignee: 주식회사 오킨스전자
Priority date: 2015-08-14
Filing date: 2015-08-14
Publication date: 2017-02-23

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for a communication filter and a method for forming a communication filter thin film using the same, and more particularly to a sputtering apparatus used for forming a thin film on a communication filter, A target made of a material for plating the communication filter, and a driving part for rotating the supporting part, wherein as the supporting part is rotated by the driving part, And a thin film is formed on the communication filter.
According to the present invention, the thin film can be formed uniformly on the surface of the communication filter, thereby improving the quality, reducing the working time and improving the working efficiency.

Description

TECHNICAL FIELD The present invention relates to a sputtering apparatus for a communication filter and a communication filter thin film forming method using the same.

The present invention relates to a sputtering apparatus and a thin film forming method, and more particularly, to a sputtering apparatus and a thin film forming method capable of improving the quality of a communication filter by rotating the substrate in a tilted state so as to uniformly form a thin film on a surface of a communication filter having a complicated structure The present invention relates to a sputtering apparatus for a communication filter capable of reducing work time and improving working efficiency, and a communication filter thin film forming method using the same.

Typically, RF communication equipment plies materials with good electrical conductivity, such as silver, over the base member to minimize losses.

Of course, plating to improve corrosion resistance may be further applied to RF communication equipment.

At present, a wet method is used for plating RF communication equipment, but the wet method is disadvantageous in that the manufacturing cost is increased and the plating time is long because not only a plating material but also an additive material is used in many cases.

In addition, as the wet method emits environmentally hazardous substances, there is a problem that the cost of environment is increased and the competitiveness is lowered.

To solve this problem, a plating (thin film) of communication equipment is deposited using a vacuum deposition apparatus having two symmetrically tilted targets, as disclosed in the prior art No. 10-2013-0114052.

In the conventional vacuum vapor deposition apparatus, when voltages are simultaneously applied to two targets, mutual interference is generated, and a voltage is sequentially applied to the targets to sequentially deposit them.

However, if the voltage is applied to one target and the voltage is applied to the other target after voltage is applied to one target and the voltage is applied to the other target, the formed thin film layer is formed, There is an increased problem.

Particularly, in the conventional vacuum vapor deposition apparatus, a process of inserting a device by applying a bias voltage is required, and when a coating material is adhered to an insulating layer during coating, if the insulating layer is electrically connected, there is a risk of electric shock.

Accordingly, a thin film is formed on a communication filter having a complicated structure, but it is required to develop a technology capable of improving quality, preventing safety accidents, reducing cost, and improving work efficiency.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a sputtering apparatus for forming a thin film on a communication filter, Wherein power is supplied to the target in a state in which the communication filter is rotated equally as the support portion is rotated by the driving portion so that the thin film is applied to the communication filter, A sputtering apparatus for a communication filter capable of uniformly forming a thin film on a surface of a communication filter and improving the quality of the communication filter, Forming method.

According to another aspect of the present invention, there is provided a sputtering apparatus used for forming a thin film on a communication filter, the sputtering apparatus comprising: a support on which a communication filter for forming a thin film is mounted; a target made of a material for plating the communication filter; As the support portion is rotated by the driving portion, electric power is supplied to the target in a state where the communication filter is rotated equally, so that a thin film is formed on the communication filter.

Preferably, the support portion is formed so as to be able to maintain a tilted state when the upper surface of the support portion is rotated in a vertical direction with respect to a center point of a support on which the communication filter is mounted, when viewed from the front, And is rotated in a fixed state at the same inclination.

The supporting part includes a supporting post rotated by the driving part, a support base which is mounted on the communication filter and is rotatable in an up-down direction at an upper end of the supporting post, and an angle adjusting part that adjusts the angle of the supporting base .

The angle adjusting unit may include a first angle adjusting mode in which the supporting unit is inclined upwards from the left end to the right end with respect to the center point when rotated by the driving unit, And a second angle adjusting mode for maintaining a downward inclined state from the left end to the right end.

The target is either copper or silver.

The target may further include a main target made of a material for plating the communication filter and an auxiliary target separated from the main target and made of a material for plating the communication filter, The target is positioned above one end of the support portion, and the auxiliary target is positioned above the other end of the support portion.

The target includes a main target made of a material for plating the communication filter, a first auxiliary target separated from one side of the main target and made of a material for plating the communication filter, and a second auxiliary target separated from the other side of the main target And a second auxiliary target made of a material for plating the communication filter, wherein the main target is located on the central axis of the support portion when viewed from the front, and the first auxiliary target is located on the upper side of one end of the support portion And the second auxiliary target is positioned above the other end of the support portion.

Also, a target adjusting part for adjusting the angle of the target is included, and as the angle is adjusted, the acceleration direction of the target material accelerated toward the supporting part is adjusted.

Before the power is supplied to the target, plasma treatment is performed at a low temperature of 200 ° C or less to remove contaminants on the surface of the communication filter.

Further, an intermediate layer film is further formed on the communication filter in which the pretreatment target is further provided and the contaminants are removed.

The pretreatment target is any one of nickel (Ni), chromium (Cr), titanium (Ti), and zinc (Zn)

The target may be formed in a square shape so as to cover the upper side of all the supporting portions when viewed in a plan view, and may be provided with a plurality of supporting portions A thin film is simultaneously formed on the stationary communication filter.

A step of mounting a communication filter on a support portion of the sputtering apparatus for a communication filter according to claim 2, a rotating step of rotating the supporting portion by a driving portion of the sputtering apparatus for communication filter, And a sputtering step of forming a thin film on the communication filter.

The sputtering step may include a first sputtering step in which the thin film is formed in a state in which the communication filter is tilted to the left by being rotated in an upward inclined state from the left end to the right end with respect to the center point of the support, And a second sputtering step in which the thin film is formed in a state in which the communication filter is tilted to the right by rotating in a downward inclined state from the left end to the right end with respect to the center point of the communication filter.

A surface treatment step of plasma-treating the communication filter surface before the sputtering step to remove contaminants on the surface of the communication filter, and an interlayer film forming step of forming an interlayer film on the communication filter from which the contaminants are removed.

As described above, according to the sputtering apparatus for a communication filter according to the present invention and the method for forming a communication filter thin film using the same, a thin film can be uniformly formed on the surface of a communication filter to improve quality, Which is a very useful and effective invention that can improve work efficiency.

1 is a view showing a sputtering apparatus for a communication filter according to the present invention,
2 is a view showing a target of another embodiment of the sputtering apparatus for a communication filter according to the present invention,
3 is a view showing a target of another embodiment according to the present invention,
4 is a view showing a support portion of a sputtering apparatus for a communication filter according to the present invention,
5 is a view showing an operating state of the support unit according to the present invention,
6 is a view showing another embodiment of the sputtering apparatus for a communication filter according to the present invention,
7 is a view showing a method of forming a communication filter thin film according to the present invention,
8 is a view showing the sputtering step according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

It should be noted that the present invention is not limited to the scope of the present invention but is only illustrative and various modifications are possible within the scope of the present invention.

FIG. 1 is a view showing a sputtering apparatus for a communication filter according to the present invention, FIG. 2 is a view showing a target of another embodiment of a sputtering apparatus for a communication filter according to the present invention, and FIG. 4 is a view showing a support portion of a sputtering apparatus for a communication filter according to the present invention, Fig. 5 is a view showing an operating state of a supporter according to the present invention, Fig. 6 is a cross- FIG. 7 is a view showing a method of forming a communication filter thin film according to the present invention, and FIG. 8 is a view showing a sputtering step according to the present invention .

As shown in the figure, a sputtering apparatus 10 for a communication filter is for forming a thin film on a communication filter 20, and comprises a support 100, a target 200, and a driver 300.

The supporting part 100 is equipped with a communication filter 20 for forming a thin film and the target 200 is made of a material for plating the communication filter 20.

Here, the target 200 is either copper or silver.

The driving unit 300 is provided to rotate the supporting unit 100.

As the supporting part 100 is rotated by the driving part 300, electric power is supplied to the target 200 in a state where the communication filter 20 is rotated in the same manner to form a thin film on the communication filter 20.

The vacuum degree of the sputtering process for thin film formation is

Lt; RTI ID = 0.0 > vacuum. &Lt; / RTI >

Here, the target 200 is composed of a main target 210 and an auxiliary target 220, as shown in FIG.

The main target 210 is made of a material for plating the communication filter 20 and the auxiliary target 220 is made of a material for plating the communication filter 20 separated from the main target 210.

The main target 210 is positioned above one end of the support 100 and the auxiliary target 220 is positioned above the other end of the support 100. [

The main target 210 and the auxiliary target 220 are inclined toward the support 100.

3, the target 200 'of another embodiment includes a main target 210', a first auxiliary target 220 ', and a second auxiliary target 230'.

The main target 210 'is made of a material for plating the communication filter 20 and the first auxiliary target 220' is separated into one side of the main target 210 ' Material.

The second auxiliary target 230 'is separated from the main target 210' and is made of a material for plating the communication filter 20.

The main target 210 'is positioned on the central axis of the support 100 and the first auxiliary target 220' is positioned on one side of the support 100 and the second auxiliary target 230 ' 'Is positioned above the other end of the support portion 100.

Of course, it is needless to say that the number of the targets 200 may be increased as needed.

The first auxiliary target 220 'and the second auxiliary target 230' are inclined toward the support 100.

Here, the target 200, 200 'of each embodiment includes a target adjusting portion 400 for adjusting the angle so that the acceleration direction of the target material accelerated toward the supporting portion 100 is .

The support portion 100 for this purpose is rotated in the vertical direction with respect to the center point of the support base 120 on which the communication filter 20 is mounted when viewed from the front and the upper surface 122 is inclined.

The support base 120 is formed to be able to maintain a tilted state and is rotated in a fixed state with the same inclination as the communication filter 20 is fixed to the upper surface 122.

4, the supporting unit 100 includes a supporting post 110, a supporting base 120, and an angle adjusting unit 130.

The support post 110 is rotated by the driving unit 300. [

The support base 120 supports the communication filter 20 and is vertically rotatable at the upper end of the support post 110.

The angle adjusting unit 130 adjusts and maintains the angle of the support base 120 to maintain and adjust the angle of the support base 120 rotated by the drive unit 300 in an inclined state.

As shown in FIG. 5, the angle adjusting unit 130 includes a first angle adjusting mode and a second angle adjusting mode.

The first angle adjusting mode maintains the upward inclination from the left end to the right end with respect to the center point when the support unit 120 is rotated by the driving unit 300.

In addition, the second angle adjusting mode maintains the downward tilting state from the left end toward the right end with respect to the center point of the support 120.

The angle adjusting unit 130 repeats the first angle adjusting mode and the second angle adjusting mode according to the thickness of the thin film to be formed on the communication filter 20. [

Meanwhile, the communication filter 20 is subjected to a plasma treatment at a low temperature of 200 ° C or lower to remove contaminants on the surface before power is supplied to the target 200 to form a thin film.

Further, an interlayer film is further formed on the communication filter from which the contaminants are removed.

To this end, a pretreatment target is further provided, and when an electric power is applied, an interlayer film is formed on the communication filter which is accelerated and contaminants are removed.

This intermediate layer film increases the bonding force of the thin film layer.

Such a pretreatment target is any one of nickel (Ni), chromium (Cr), titanium (Ti), and zinc (Zn)

As shown in FIG. 6, a plurality of supporting portions 100 are provided, and the driving portion 300 is provided to rotate the supporting portions 100, respectively.

Of course, it is also possible to rotate the plurality of supporting portions 100 by one driving portion 300 as occasion demands.

The target 200 may be formed in a square shape so as to cover the upper side of all the supporting portions 100 when viewed from the plane and simultaneously form a thin film on the communication filters respectively mounted on the supporting portions 100.

As shown in FIG. 7, the communication filter thin film forming method using the sputtering apparatus 10 for a communication filter is composed of a mounting step (S10), a rotating step (S20), and a sputtering step (S30).

The mounting step S10 includes placing the communication filter 20 on the supporting part 100 of the sputtering device 10 for communication filter and rotating the supporting part 100 by the driving part 300 of the sputtering device 10 for communication filter The support 100 is rotated.

The sputtering step S30 supplies electric power to the target 200 of the sputtering apparatus 10 for a communication filter to form a thin film on the communication filter 20. [

Here, as shown in FIG. 8, the sputtering step S30 includes a first sputtering step S31 and a second sputtering step S32.

The first sputtering step S31 rotates upward from the left end toward the right end with respect to the center point of the support base 120 to form the thin film with the communication filter 20 tilted to the left.

The second sputtering step S32 is rotated in a downward inclined state from the left end to the right end with respect to the center point of the supporter 120 to form the thin film in a state in which the communication filter 20 is tilted to the right .

The first sputtering step S31 and the second sputtering step S32 may repeat the first angle adjusting mode and the second angle adjusting mode depending on the thickness of the thin film to be formed on the communication filter 20, Do.

Meanwhile, before the sputtering step (S30), a surface treatment step of removing contaminants on the surface of the communication filter 20 by plasma treatment at a low temperature of 200 ° C or less, and an intermediate layer A film forming step is further included.

In the intermediate layer film forming step, an interlayer film is formed on the communication filter 20 from which contaminants are removed by applying electric power to the pre-treatment target.

Such an interlayer film can increase the bonding force of the thin film layer.

Here, the pretreatment target is any one of nickel (Ni), chromium (Cr), titanium (Ti), and zinc (Zn).

10: sputtering device 20: communication filter
100: Support part 110: Support post
120: Support base 130:
200: target 300:

Claims

A sputtering apparatus used for forming a thin film on a communication filter,
A support on which a communication filter for forming a thin film is mounted;
A target made of a material for plating the communication filter; And
And a driving unit for rotating the supporting unit,
Wherein power is supplied to the target in a state in which the communication filter is rotated in the same manner as the support portion is rotated by the driving portion to form a thin film on the communication filter.

The apparatus according to claim 1,
When viewed from the front,
The communication filter is formed so as to be able to maintain an inclined state while being tilted on its upper surface by being rotated in a vertical direction with respect to a center point of a support to which the communication filter is mounted,
Wherein the communication filter is fixed in the same inclination as the communication filter is fixed on the upper surface.

3. The apparatus according to claim 2,
A support post rotated by the driving unit;
A support table for supporting the communication filter and being rotatable up and down at an upper end of the support post; And
And an angle adjusting unit for adjusting an angle of the support base.

[5] The apparatus of claim 3,
When rotated by the driving unit,
A first angle adjustment mode in which the support is kept tilted upward from a left end to a right end with respect to a center point; And
And a second angle adjusting mode in which the support is kept inclined downward from a left end to a right end with respect to a center point.

2. The method of claim 1,
Wherein the sputtering target is one of copper and silver.

2. The method of claim 1,
A main target made of a material for plating the communication filter; And
And an auxiliary target separated from the main target and made of a material for plating the communication filter,
When viewed from the front,
Wherein the main target is positioned above one end of the support portion,
And the auxiliary target is positioned above the other end of the support portion.

2. The method of claim 1,
A main target made of a material for plating the communication filter;
A first auxiliary target separated from one side of the main target and made of a material for plating the communication filter; And
And a second auxiliary target separated from the main target by a material for plating the communication filter,
When viewed from the front,
The main target is located on the center axis of the support portion,
Wherein the first auxiliary target is positioned above one end of the support portion,
And the second auxiliary target is positioned above the other end of the support portion.

The method according to any one of claims 1, 6, and 7,
And a target adjusting unit for adjusting the angle of the target, wherein the acceleration direction of the target material accelerated toward the supporting unit is adjusted as the angle is adjusted.

The method according to claim 1,
Wherein plasma treatment is performed at a low temperature of 200 占 폚 or lower before power is supplied to the target to remove contaminants on the surface of the communication filter.

10. The method of claim 9,
Further comprising a pretreatment target to further form an intermediate layer film on the communication filter from which contaminants have been removed.

11. The method according to claim 10,
Wherein at least one of nickel (Ni) and chromium (Cr), titanium (Ti), and zinc (Zn) is an alloy of any one of them.

The method according to claim 1,
A plurality of support portions are provided,
The driving unit is provided to rotate the respective supporting parts,
The target may include:
Wherein a thin film is simultaneously formed on a communication filter formed in a square shape so as to cover the upper side of all the supporting portions when viewed from a plane and mounted on a plurality of support portions.

A mounting step of mounting a communication filter on a supporting part of the sputtering apparatus for a communication filter according to claim 2;
A rotating step of rotating the supporting part by a driving part of the sputtering device for communication filter; And
And a sputtering step of supplying power to the target of the sputtering apparatus for communication filter to form a thin film on the communication filter.

14. The method of claim 13,
A first sputtering step in which the thin film is formed in a state in which the communication filter is tilted to the left by being rotated upwardly inclined from the left end to the right end with respect to the center point of the support, And
And a second sputtering step of rotating the communication filter slanting downward from a left end to a right end with respect to a center point of the support to form a thin film with the communication filter tilted to the right.

14. The method of claim 13,
A surface treatment step of plasma-treating the surface of the communication filter before the sputtering step to remove contaminants from the surface of the communication filter; And
And forming an intermediate layer film on the communication filter from which contaminants have been removed.