KR20170016536A - Dual deposition system succsessively depositing two substrates - Google Patents

Dual deposition system succsessively depositing two substrates Download PDF

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Publication number
KR20170016536A
KR20170016536A KR1020150109327A KR20150109327A KR20170016536A KR 20170016536 A KR20170016536 A KR 20170016536A KR 1020150109327 A KR1020150109327 A KR 1020150109327A KR 20150109327 A KR20150109327 A KR 20150109327A KR 20170016536 A KR20170016536 A KR 20170016536A
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KR
South Korea
Prior art keywords
substrate
deposition
evaporation source
aligner
chamber
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KR1020150109327A
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Korean (ko)
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KR101721895B1 (en
Inventor
정하경
전옥철
최명운
김성문
김정용
정광호
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주식회사 야스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Abstract

It is an object of the present invention to provide a novel dual deposition system capable of continuously mounting thin film elements on two substrates in a more simplified device configuration.
In the present invention, two substrates are successively brought into one deposition chamber center portion, and a substrate frame in the chamber transfers each substrate to the aligner disposed on the left and right sides with respect to the center, One substrate is loaded and aligned, and when the aligned substrate is completely evaporated, the evaporation source is moved to the opposite side to perform a deposition process on the second substrate, which has undergone the alignment process, Take it to the side where there is no evaporation source and align it with the aligner.

Description

[0001] DUAL DEPOSITION SYSTEM SUCCSESSIVELY DEPOSITING TWO SUBSTRATES [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition system applied to a manufacturing process of an OLED, a solar cell, and the like, and more particularly, to a clustered evaporation system for depositing a thin film element using an evaporation source.

A vapor deposition system for manufacturing a thin film device by heating an evaporation source and spraying an evaporated material is characterized in that a mask is attached to a substrate to form a thin film device in a specific region of the substrate and the process is performed. The mask and the substrate require an alignment process to precisely match their positions, and the evaporated material is sprayed to the evaporation source in the state where the alignment is completed, thereby forming the thin film device. The alignment apparatus may also align the substrate with the mask by lifting the substrate and aligning the mask with respect to the substrate chucked to the chuck plate. In the case of a cluster type production facility, the deposition process and the alignment process are performed in the same chamber. Here, the alignment process takes a considerable time, and the deposition material is wasted while the alignment process is performed.

As an attempt to solve such a problem, Korean Patent Laid-Open No. 10-2015-0051732 discloses a method of depositing two substrates in succession in a deposition chamber to deposit and align another substrate while aligning and aligning the evaporation source To reduce the tack time of the thin film manufacturing process. However, in the publication, the two substrates are carried in different paths in the deposition chamber, and the arrangement of the substrates is radial, so that the evaporation source is rotated after the carry-in. In this type of dual deposition system, forming a non-rectangular chamber, setting the driving direction of the robot arm, driving according to the path of the evaporation source, and the like are extremely difficult.

It is therefore an object of the present invention to provide a novel dual deposition system capable of continuously depositing thin film elements on two substrates in each chamber in a cluster deposition system with a more simplified device configuration.

According to the above object, in the cluster deposition system of the present invention, two substrates are successively carried in one central portion of a deposition chamber, and a substrate shuttle in the chamber is placed on the left and right sides of the substrate with respect to the center If the substrate is transferred to the aligned aligner, one substrate is aligned and deposited while another substrate is loaded and aligned. When the aligned substrate is completely vaporized, the evaporation source is moved to the opposite side and the second The substrate is then subjected to a deposition process, in which the substrate is taken from the new substrate and transferred to the evaporation source side to align with the aligner.

In the present invention, the shape of the deposition chamber may be a rectangular parallelepiped, and the transport path of the substrate frame carrying the two substrates and the transport path of the evaporation source to be scanned to deposit the thin film on each substrate may be linear And does not require rotational drive.

The continuous process for these two substrates continues to be repeated, reducing the process time by half.

That is,

One deposition chamber in which two sheets of first and second substrates can be placed;

A substrate gate at a central portion of the deposition chamber into which the substrate is introduced;

First and second aligners disposed respectively to the left and right of the substrate gate of the deposition chamber;

A substrate chute disposed in the deposition chamber, the substrate chute being capable of loading a substrate on both sides thereof;

An evaporation source disposed in the deposition chamber, and an evaporation source scanner capable of transporting the evaporation source,

When the first substrate is loaded into the deposition chamber through the substrate gate, the first substrate is transferred to the first aligner to accommodate the shattle, thereby performing the alignment process and the deposition process,

While the first substrate is being aligned and the deposition process is being carried out, the chute receives the second substrate from the gate and transfers it to the second aligner to perform the alignment process, and the second substrate is subjected to the alignment process When the deposition process of the first substrate is completed,

The evaporation source is conveyed to the side where the second substrate is aligned by the evaporation source scanner, and the second substrate is subjected to the deposition process, and the deposition process for the substrate is continuously performed.

In the above, the substrate on which the deposition is completed is taken out through the take-out gate, and the subsequent dual deposition is carried out in the same manner after the subsequent transfer of the substrate.

In the above, the substrate frame for transferring the substrate may be a structure having both arms capable of housing the substrates at both ends thereof.

Further, the substrate shafts can be folded and folded so that the lengths of both arms can be increased or decreased.

Further, the substrate frame can be driven by a linear motor.

According to the present invention, since the two substrates are aligned and deposited in one deposition chamber at the same time, the tach time can be reduced by half and the processing speed can be doubled.

In addition, according to the present invention, since the robot arm arms the deposition area of the two substrates, the shuttle in the chamber receives the substrate from the same place without bringing in the deposition area, and the scan transfer path of the evaporation source is also straight. It is convenient to operate.

1A and 1B are a plan view and a cross-sectional view of the deposition system of the present invention.
2 is a cross-sectional view of a substrate shank of the present invention.
FIG. 3 is a sequence diagram sequentially showing two substrates to be continuously delivered to two aligners in the deposition system of the present invention.
Figures 4a and 4b are planar layouts for a cluster deposition system to which the present invention is applied in connection with Figures 1a and 1b, respectively.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1A and 1B are perspective plan views schematically illustrating a deposition system of the present invention. This deposition system is applied to the chambers constituting the cluster deposition system as shown in Figs. 4A and 4B, respectively.

In Fig. 1A, the substrate is transferred to the center of the deposition chamber, and in Fig. 1B, the substrate is transferred to the side of one side of the deposition chamber. This is because, when the size of the substrate is close to a square, as the substrate is carried in through the center of the chamber 100 as in FIGS. 1A and 4A, it saves the copper line. When the substrate is rectangular and longer in length, One end of the chamber is used as an entrance to reduce the burden of widening the doorway width. In such a case, the length of the chamber is increased by the longer substrate length, and the layout is as shown in FIG. 4B. That is, in FIGS. 1A and 4A, the central portion of the chamber constituting the cluster serves as a connection portion from which the substrate is transferred from the cluster. In FIGS. 1B and 4B, one end portion of the chamber serves as a connection portion to the cluster and a substrate entrance.

1A, there is shown an aligner 300 and an evaporation source 200, which are disposed on the right and left sides of one chamber 100, respectively. The substrate chute 400 also has a central backbone and both arms extended from it. Each of the arms of the substrate chute 400 can house one substrate, and the substrate that has entered the central portion can be transferred one by one to the left and right by a relatively short copper line. While aligning with respect to the substrate transferred to the left, the substrate chute 400 newly transfers another substrate to the right. The substrate that has been previously introduced is aligned, while the substrate that has been introduced later is aligned at the right aligner while the substrate is being deposited by the evaporation source, and the substrate on which deposition has been completed is removed when the alignment is completed, and the evaporation source is irradiated by the evaporation source scanner 200 And the substrate on the right side is deposited. The specific configuration of the shuttle 400 for such a process is shown in detail in FIG.

A first aligner 300 and a second aligner 300 are disposed on the upper side of the chamber 100. Each of the first aligner 300 and the second aligner 300 includes a substrate chute 400 for receiving a substrate carried in the center of the chamber 100, And an evaporation source scanner 200 for transferring the evaporation source and the evaporation source are disposed in the chamber 100.

The zone in which the first aligner is located is referred to as the first deposition zone for convenience and the zone in which the second aligner is located is referred to as the second deposition zone. The substrate is transferred through a gate (not shown) corresponding to a central portion between the first deposition section and the second deposition section. The first substrate carried is received by the substrate chute 400, and the substrate chute 400 can receive the substrate from both the left and right arms. The received substrate is transferred to the first deposition zone to align at the first aligner, and the substrate chute 400 again receives the central substrate and the second substrate. The second substrate is transported to a second deposition zone and aligned by a second aligner. While the first substrate is deposited by an evaporation source. At the end of the deposition, alignment of the second substrate is completed, the first substrate is taken out to the take-out gate, and the evaporation source is carried by the evaporation source scanner 200 and transferred to the second deposition section. While the second substrate is being deposited, the substrate chute 400 is moved to the center to receive the new substrate transfer and transfer the substrate to the first aligner, and the substrate is continuously transferred in the manner described above, Lt; RTI ID = 0.0 > 100 < / RTI > The evaporation source scanner 200 can be made of various types of transportation means, but in the present embodiment, the evaporation source scanner 200 is constructed as a folding type as shown in FIGS. 1A and 1B.

The substrate shafts 400 are of foldable type so that the length of both arms can be increased or decreased. That is, the substrate chute 400 can accommodate and carry the substrate by folding and stretching the length of both folded arms without moving the body for substrate transfer.

In addition, the substrate chute 400 may be driven by a linear motor.

According to the present invention, since the two substrates are aligned and deposited in one deposition chamber at the same time, the tach time can be reduced by half and the processing speed can be doubled.

As described above, in the present invention, the deposition chamber can be formed in a rectangular parallelepiped shape, and the robot arm continuously transports the substrate to a fixed point corresponding to the center of the deposition chamber, and the chamber in the chamber receives the substrate, The system operation is convenient. Furthermore, since the evaporation source transported for continuous deposition of two substrates also moves the linear distance, it is desirable to maintain the driving accuracy.

In addition, in the present invention, two aligners are disposed in the chamber, so that even when the gripper 310 is operated to coalesce and align the substrate and the mask, the substrate shuttle 400 ) Were allowed to avoid interference in a lifting manner. That is, when the gripper 310 receives the substrate delivered to the aligner 300 by the substrate chute 400, but the substrate chute 400 does not interfere with the path of the substrate chute 400 by the gripper 310 While passing through the aligner 300, the gripper 310 is routed upwards and is avoided. This substrate-gripper interference avoidance operation occurs naturally because the substrate chute 400 is atmospheric in the center or is delivering the substrate to another aligner 300 while the gripper 310 is lowering and aligning. The Vision Up / Down Unit 320 may also be down-driven to identify the alignment, but at this time, the Vision Up / Down Unit 320 may be in the standby state at the center or in the other aligner 300, When the substrate is being delivered to the aligner, the substrate is lifted up like the gripper 310 and does not interfere with the path of the substrate chute 400.

The internal state of the chamber shown in FIG. 1B is also similar to that shown in FIG. 1A, except that the substrate is introduced at one end of the chamber 100, not at the center. It is the same principle that the shattle 400 continuously delivers two substrates while going across two pairs of aligners 300 and the evaporation source is moved by the evaporation source scanner 200 to sequentially deposit the two substrates, The principle and method of interference prevention between the gripper 310 and the vision up / down unit 320 with respect to the path of the video camera 400 are also the same as those in FIG.

FIG. 2 is a cross-sectional view of the configuration of the chassis 400. The magnet 430 and the coil 440 constituting the linear motor 450, the chassis base 410, and the chassis guide 420 are illustrated.

FIG. 3 shows the process of aligning and depositing two sheets of substrates sequentially on two aligners according to the present invention, along with the movement path of the substrate frame.

It is to be understood that the invention is not limited to the disclosed embodiment, but is capable of many modifications and variations within the scope of the appended claims. It is self-evident.

100; chamber
200: evaporation source scanner
300: Earliner
310: gripper
320: Vision up / down unit
400: (substrate) chassis
410:
420: Shattle guide
430: Magnet
440: coil part
450: Linear motor

Claims (5)

In a cluster deposition system,
One deposition chamber in which two sheets of first and second substrates can be placed;
A substrate gate at a central portion of the deposition chamber into which the substrate is introduced;
First and second aligners disposed respectively to the left and right of the substrate gate of the deposition chamber;
A substrate chuck disposed in the deposition chamber, the substrate chuck being capable of loading a substrate and a mask, respectively, into first and second aligners;
At least one evaporation source disposed in the deposition chamber, and an evaporation source scanner capable of transporting the evaporation source,
When the first substrate is loaded into the deposition chamber through the substrate gate, the first substrate is transferred to the first aligner to accommodate the shattle, thereby performing the alignment process and the deposition process,
While the first substrate is being aligned and the deposition process is being carried out, the chute receives the second substrate from the gate and transfers it to the second aligner to perform the alignment process, and the second substrate is subjected to the alignment process When the deposition process of the first substrate is completed,
Wherein the evaporation source is conveyed by the evaporation source scanner to the side where the second substrate is aligned so that the second substrate is subjected to the deposition process and the deposition process is continuously performed on the substrate. The dual deposition system of claim 1, wherein the substrate transporting substrate is a structure having arms at both ends capable of housing substrates. 2. The dual deposition system of claim 1, wherein the substrate shuttle for transferring the substrate is foldable so that the length of both arms can be increased or decreased. The dual deposition system of claim 1, wherein the substrate shuttle and the evaporation source move along a linear travel path. The dual deposition system of claim 1, wherein the gripper is in an up position while the substrate chute passes the aligner so that the movement path of the substrate chute is not interfered with by the gripper provided on the aligner.


KR1020150109327A 2015-08-03 2015-08-03 Dual deposition system succsessively depositing two substrates KR101721895B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120028627A (en) * 2010-09-15 2012-03-23 삼성모바일디스플레이주식회사 Depositing system for substrate and depositing method using the same
KR20130109484A (en) * 2012-03-27 2013-10-08 에스엔유 프리시젼 주식회사 Organic matter evaporation system
KR20130142844A (en) * 2012-06-20 2013-12-30 주식회사 원익아이피에스 Semiconductor manufacturing apparatus having variable transferring paths and in-line system having the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120028627A (en) * 2010-09-15 2012-03-23 삼성모바일디스플레이주식회사 Depositing system for substrate and depositing method using the same
KR20130109484A (en) * 2012-03-27 2013-10-08 에스엔유 프리시젼 주식회사 Organic matter evaporation system
KR20130142844A (en) * 2012-06-20 2013-12-30 주식회사 원익아이피에스 Semiconductor manufacturing apparatus having variable transferring paths and in-line system having the same

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