KR20160149579A - Micro heater and Micro sensor - Google Patents

Micro heater and Micro sensor Download PDF

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Publication number
KR20160149579A
KR20160149579A KR1020150086766A KR20150086766A KR20160149579A KR 20160149579 A KR20160149579 A KR 20160149579A KR 1020150086766 A KR1020150086766 A KR 1020150086766A KR 20150086766 A KR20150086766 A KR 20150086766A KR 20160149579 A KR20160149579 A KR 20160149579A
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South Korea
Prior art keywords
sensor
electrode
heater
substrate
porous layer
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KR1020150086766A
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Korean (ko)
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KR101756357B1 (en
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안범모
박승호
변성현
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(주)포인트엔지니어링
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Priority to KR1020150086766A priority Critical patent/KR101756357B1/en
Priority to US15/181,976 priority patent/US20160370336A1/en
Priority to EP17194843.3A priority patent/EP3287777B1/en
Priority to EP17194842.5A priority patent/EP3287776A1/en
Priority to EP16174642.5A priority patent/EP3115775A3/en
Priority to CN201610428627.6A priority patent/CN106257961A/en
Publication of KR20160149579A publication Critical patent/KR20160149579A/en
Application granted granted Critical
Publication of KR101756357B1 publication Critical patent/KR101756357B1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/18—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—Specially adapted to detect a particular component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/16—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/78—Heating arrangements specially adapted for immersion heating
    • H05B3/82—Fixedly-mounted immersion heaters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

Abstract

The present invention relates to a micro-heater and a micro-sensor, and more particularly, to a micro-heater and a micro-sensor in which a heater electrode is formed on a barrier layer of a substrate and thereby a liquid photoresist is prevented from permeating into pores during formation of the heater electrode. Therefore, a pattern of the heater electrode can be smoothly formed and a small and precise pattern of the heater electrode can be obtained.

Description

[0001] Micro heater and Micro sensor [0002]

The present invention relates to a micro-heater and a micro-sensor, and more particularly to a micro-heater and a micro-sensor in which a heater electrode is formed on a barrier layer of a substrate.

Recently, as the interest in the environment has increased, it is required to develop a small sensor capable of obtaining accurate and various information in a short time. Especially, for the miniaturization, high precision and low price of micro sensor such as gas sensor to easily measure the concentration of the related gas for the improvement of the residential space, coping with harmful industrial environment, food and food production process management Efforts have been underway.

Currently, gas sensors are evolving into micro gas sensors in the form of micro electro mechanical systems (MEMS) by the application of semiconductor processing technology in the conventional ceramic sintering or thick film structure.

In terms of measurement methods, the most widely used method in current gas sensors is to measure the change in the electrical characteristics of a gas sensor when it is adsorbed to the sensor material. A metal oxide such as SnO 2 is used as a sensing material and a change in electric conductivity according to the concentration of a gas to be measured is measured to provide a relatively simple measurement method. At this time, the change of the measured value is more remarkable when the metal oxide sensing material is heated and operated at a high temperature. Accurate temperature control is therefore essential for fast and accurate measurement of gas concentrations. Also, at the time of measurement, the gas species or water adsorbed on the sensing material are forcibly removed by heating at high temperature, and the sensing substance is reset (restored) to the initial state and the gas concentration is measured. Therefore, temperature characteristics in gas sensors directly affect the main measurement parameters such as sensor sensitivity, recovery time, and reaction time.

Therefore, in order to efficiently heat the micro heater, it is effective to locally uniformly heat only the sensing material. However, if the power consumption for controlling the temperature of the microgas sensor is large, it requires a large battery or power source, even though the volume of the sensor and the measuring circuit is small, which ultimately determines the size of the entire measuring system. Therefore, in order to implement a micro gas sensor, a structure requiring low power consumption should be considered first.

In order to reduce the heat loss, etch pits or grooves are formed in the sensor structure by the bulk micromachining process since most of the micro gas sensors are manufactured using a silicon substrate having a very high thermal conductivity. And a micro heater, an insulating film, and a sensing material are sequentially formed on the structure to form a suspended structure separated from the substrate, thereby partially reducing heat loss. However, in this case, since it is a manufacturing method based on the wet etching using the crystal orientation of the substrate itself, there is a restriction on the miniaturization of the sensor element, and the physical properties of the etchant such as KOH (potassium hydroxide) used are difficult to be compatible with the standard CMOS semiconductor process .

1 is a perspective view of a humidity sensor which is one of conventional micro sensors.

The humidity sensor 10 includes a substrate 11 and an electrode 15 formed on the aluminum oxide porous layer 13 and an aluminum oxide oxide (AAO) layer 13 formed on the substrate 11 do.

The substrate 11 is made of aluminum and is formed in a substantially rectangular plate shape.

The aluminum oxide porous layer 13 is formed by oxidizing the substrate 11. When aluminum is oxidized, an aluminum oxide porous layer 13 having a plurality of holes 13a formed on its surface can be formed. A barrier layer is formed between the aluminum oxide porous layer 13 and aluminum.

At this time, the diameter of the hole 13a is formed to be 60 nm or less. When the diameter of the hole 13a is 60 nm or less, the hole 13a can be prevented from being damaged by the etching solution.

The electrode 15 is made of a metal such as platinum, aluminum, or copper, and may be formed by various methods such as a vapor deposition method.

The electrode 15 includes a first electrode 16 and a second electrode 17 disposed adjacent to the first electrode 16. The first electrode 16 includes a first electrode 16 and a second electrode 17, The electrode protrusion 16a is formed and the electrode protrusion 17a protruding toward the first electrode 16 is formed on the second electrode 17. [

However, when such a microsensor is provided, there is a problem that heat insulation is lost and heat loss occurs.

On the other hand, a liquid photoresist may be used for securing the resolution of the pattern when forming the electrode pattern. However, when such a liquid photoresist is applied to a microsensor having a conventional porous layer, there is a problem that the liquid photoresist penetrates into the pores and pattern formation is not smooth.

Korean Patent Publication No. 2009-0064693 Korean Patent Registration No. 1019576

The present invention has been conceived to solve the above-described problems. It is an object of the present invention to provide an ink jet recording head having excellent heat insulation and preventing the liquid photoresist from penetrating into the pores when the heater electrode is formed, And to provide a micro heater and a micro sensor which can be formed small and precisely.

In order to accomplish the above object, the present invention provides a micro heater comprising: a substrate including a porous layer having a plurality of pores formed in a vertical direction and a barrier layer disposed on the porous layer; and a heater electrode formed on the barrier layer .

The heater electrode is formed using a liquid photoresist, and the substrate may be formed by anodizing aluminum and removing only aluminum.

And a part of the barrier layer is removed to allow the pores of the porous layer to pass through in a vertical direction.

The heater electrode is platinum, and a tantalum oxide layer may be disposed between the substrate and the heater electrode.

An air gap formed by removing all of the upper surface to the lower surface of the substrate in a region excluding the portion supporting the heater electrode is provided, and a plurality of air gaps may be formed discontinuously.

In order to accomplish the above object, a microsensor of the present invention comprises a substrate having a porous layer formed with a plurality of pores in a vertical direction and a barrier layer disposed on the porous layer, a sensor electrode formed on the substrate, And a heater electrode formed on the substrate, wherein at least one of the sensor electrode and the heater electrode is formed on the barrier layer.

The sensor electrode or the heater electrode formed on the barrier layer is formed using a liquid photoresist, and the substrate may be formed by anodizing aluminum and removing only aluminum.

Wherein at least one of the heater electrode and the sensor electrode is made of platinum, and a tantalum oxide layer is formed between the substrate and the electrode formed of platinum, wherein a portion of the barrier layer is removed, Can be arranged.

An air gap formed by removing all of the upper surface to the lower surface of the substrate is provided in a region excluding a portion supporting the heater electrode and the sensor electrode at all times, and a plurality of air gaps may be discontinuously formed.

According to an aspect of the present invention, there is provided a micro heater including: a porous layer substrate having a plurality of pores formed thereon; and a heater electrode formed on the substrate, wherein an upper portion of the pores disposed under the heater electrode is closed .

The upper portion of the pore disposed under the heater electrode is blocked by the barrier layer and the lower portion of the pore disposed under the heater electrode can be opened.

In order to accomplish the above object, the micro sensor of the present invention includes: anodic oxidation treatment of aluminum, followed by removing only aluminum, thereby forming a porous layer having a plurality of pores formed in the vertical direction and a porous layer A sensor electrode formed on a barrier layer of the porous layer substrate, the sensor electrode including a sensor wiring and a sensor electrode pad connected to the sensor wiring; and a sensor electrode formed on the barrier layer of the porous layer substrate, A heater electrode including a heater wiring disposed closer to the sensor wiring than a pad and a heater electrode pad connected to the heater wiring and a portion excluding a portion supporting the sensor electrode and the heater electrode, And the air gap is formed by removing all of the air gap to the bottom surface.

In order to accomplish the above object, the micro sensor of the present invention includes: anodic oxidation treatment of aluminum, followed by removing only aluminum, thereby forming a porous layer having a plurality of pores formed in the vertical direction and a porous layer A first sensor electrode formed on the barrier layer of the porous layer substrate and including a first sensor wiring and a second sensor electrode pad connected to the first sensor wiring; A second sensor electrode formed on the barrier layer of the porous layer substrate and including a second sensor wiring and a second sensor electrode pad connected to the second sensor wiring; And a heater wire including first and second heater electrode pads which are connected to both ends of the heater wire and which are formed by surrounding at least a part of the first and second sensor electrodes from the outside, It characterized in that it comprises a pole, and the first sensor electrode and the second sensor electrode and the air gap to be removed both to when the upper surface of the porous layer the substrate is a plurality of formed discretely between regions of the heater electrode.

In order to accomplish the above object, the microsensor of the present invention comprises: a porous layer substrate formed of a porous layer having a plurality of pores with one end opened and the other end closed; a porous layer substrate formed on the other end of the porous layer substrate, And a sensor electrode disposed on the other end of the porous layer substrate, the heater wiring being disposed closer to the sensor wiring than the sensor electrode pad and the heater wiring being connected to the heater wiring, A heater electrode including a heater electrode pad, and an air gap formed in the region excluding the portion supporting the sensor electrode and the heater electrode, all of which are removed from the upper surface to the lower surface of the porous layer substrate.

According to the micro-heater and micro-sensor of the present invention as described above, the following effects can be obtained.

The heater electrode is formed on the barrier layer of the substrate to prevent the liquid photoresist (liquid phase) from permeating into the pores when the heater electrode is formed, so that the pattern of the heater electrode can be smoothly formed, . At the same time, the heat insulating property is improved due to the porous layer formed on the substrate, and the temperature can be increased to a high temperature by using low power. In addition, the electrode portion can be stably supported by the porous layer to maintain mechanical durability. In addition, during the heat treatment process, damage to the electrode due to organic matter remaining in the pores is prevented. In addition, it can be optimized for miniaturized devices such as mobile devices. Also, when the electrode or the sensing material is formed, the barrier layer serves to support the porous layer of the substrate, and the porous layer is maintained.

The heater electrode is formed using a liquid photoresist, and the product can be miniaturized, and the electrode pattern can be finely formed.

The substrate is formed of an aluminum oxide porous layer, and the porous layer can be easily formed.

The barrier layer is formed only in a part of the porous layer, and the porous layer includes pores penetrating in the up and down direction, thereby further improving the heat insulating property.

The heater electrode is platinum, and a tantalum oxide layer is disposed between the substrate and the heater electrode, thereby improving the adhesion of the electrode.

1 is a perspective view showing a conventional humidity sensor.
2 is an exploded perspective view of a conventional aluminum oxide porous layer.
3 is a plan view of a microsensor equipped with a micro heater according to a preferred embodiment of the present invention.
4 is a sectional view taken along the line AA of Fig.
5 is an enlarged view of a portion B in Fig.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

For reference, the same components as those of the conventional art will be described with reference to the above-described prior art, and a detailed description thereof will be omitted.

3 to 5, the micro sensor having the micro heater according to the present embodiment includes a porous layer 103 in which a plurality of pores 102 are formed in a vertical direction, A sensor electrode 300 formed on the substrate 100 and a heater electrode 200 formed on the substrate 100. The sensor electrode 300 is formed on the substrate 100, At least one of the electrode 300 and the heater electrode 200 is formed on the barrier layer 104.

The substrate 100 is formed of an aluminum material and is formed into a rectangular plate shape.

The substrate 100 includes a porous layer 103 and a barrier layer 104 formed on the porous layer 103. That is, the substrate 100 is formed of a porous material having a plurality of pores 102 formed in the vertical direction.

The diameter 102 and length of the pores shown in the figures are shown somewhat larger for convenience of explanation.

The substrate 100 can be formed by anodizing aluminum plate. Accordingly, the porous layer substrate is an aluminum oxide (AAO) layer. Aluminum is removed from the oxidized aluminum substrate 100. That is, the porous layer 103 and the barrier layer 104 are left on the substrate 100.

The upper portion of the pore 102 is blocked by the barrier layer 104 and the lower portion is opened. As a result, the adiabatic effect is increased.

The sensor electrode 300 is formed on the upper surface of the barrier layer 104 from which the aluminum is removed from the substrate 100.

The sensor electrode 300 senses gas.

As described above, the sensor electrode 300 may sense humidity or the like.

The sensor electrode 300 includes a first sensor electrode 300a and a second sensor electrode 300b spaced apart from the first sensor electrode 300a. The first sensor electrode 300a and the second sensor electrode 300b are spaced apart from each other in the left-right direction and are formed symmetrically with respect to a center line disposed vertically on the plane.

The first sensor electrode 300a includes a first sensor wiring and a first sensor electrode pad connected to the first sensor wiring.

The second sensor electrode 300b includes a second sensor wiring and a second sensor electrode pad connected to the second sensor wiring.

The sensor wiring 310 includes the first sensor wiring and the second sensor wiring.

The sensor electrode pad 320 includes the first sensor electrode pad and the second sensor electrode pad.

The sensor electrode 300 is formed of a platinum (Pt) material.

The sensor wiring 310 is disposed at the center of the substrate 100.

The sensor wiring 310 is formed in a linear shape having a constant width.

The sensor electrode pad 320 is formed to have a larger width than the sensor wiring 310. In addition, the sensor electrode pad 320 has a larger area when viewed from the plane than the sensor wiring 310.

The sensor electrode pads 320 of the first and second sensor electrodes 300a and 300b are disposed at two adjacent corners of the rectangular substrate 100 and are formed to have a wider width toward the free end. That is, the sensor electrode pad 320 is formed to be narrower toward the sensor wiring 310.

The heater electrode 200 is formed on the upper surface of the barrier layer 104 from which the aluminum is removed from the substrate 100.

The sensor electrode 300 and the heater electrode 200 formed on the barrier layer 104 are formed using a liquid photoresist (LPR). The liquid photoresist will not penetrate into the pores 102 due to the barrier layer 104. Accordingly, patterns of the sensor electrode 300 and the heater electrode 200 can be smoothly formed, and the pattern of the sensor electrode 300 and the heater electrode 200 can be formed small and precise.

The heater electrode 200 and the sensor electrode 300 are formed through sputtering or the like.

When the heater electrode 200 and the sensor electrode 300 are formed by sputtering or the like when the porous layer 103 is supported by the barrier layer 104 when the heater electrode 200 and the sensor electrode 300 are formed, The porous layer 103 can be maintained.

For example, a microsensor manufacturing method is as follows. After the aluminum substrate is anodized, the aluminum is removed by etching. Then, the heater electrode 200 and the sensor electrode 300 are formed by sputtering after the liquid photoresist. After the liquid photoresist is removed, the air gap 101 described below is formed by etching.

The heater electrode 200 is formed of a platinum (Pt) material.

The heater electrode 200 includes a heater wire 210 disposed closer to the sensor wire 310 than the sensor electrode pad 320 and a heater electrode pad 220 connected to the heater wire 210.

The heater wiring 210 is disposed at the central portion of the substrate 100. The heater wire 210 includes a first bend portion 211 and a second bend portion 213 spaced from the first bend portion 211 and a connection bend portion 213 connecting the first bend portion 211 and the second bend portion 213 212). The first bend section 211 and the second bend section 213 are formed to be curved in a '?' Shape when viewed from a plane. The connection bend section 212 is formed to be bent in a 'U' shape when viewed in a plan view. Therefore, a spacing space 214 is formed between the first bent portion 211 and the second bent portion 213. The sensor wiring 310 is disposed in the spacing space 214. That is, the heater wire 210 is formed by surrounding at least a part of the first and second sensor electrodes 300a and 300b from the outside. This allows the sensing material 400 described below to be effectively heated.

The heater electrode pad 220 includes first and second heater electrode pads 220a and 220b connected to both ends of the heater wire 210, respectively. As described above, the heater electrode pads 220 are formed of at least two or more.

The heater electrode pad 220 is disposed at two adjacent two corners of the substrate 100, and is formed so as to have a wider width toward the outside. That is, the heater electrode pad 220 is formed to have a narrower width toward the heater wiring 210.

The heater electrode pad 220 is formed to have a larger width than the heater wiring 210. In addition, the heater electrode pad 220 has a larger area when viewed from the plane than the heater wiring 210.

As described above, a part of the barrier layer may be removed so that the pores of the porous layer may penetrate up and down. That is, the barrier layer is formed only in a part of the porous layer, and the porous layer may include a pore penetrating in the up and down direction. That is, only the porous layer may be formed on the substrate except for the heater electrode and the sensor electrode by removing both the aluminum layer and the barrier layer.

A protective layer (not shown) of tantalum oxide (TaOx) may be formed on the heater electrode 200 and the sensor electrode 300. The heater electrode 200 and the sensor electrode 300 can be prevented from being oxidized and the heater electrode 200 and the sensor electrode 300 can be protected.

Further, a tantalum oxide layer 700 is disposed between the barrier layer 104 of the substrate 100 and the heater electrode 200 and the sensor electrode 300. Adhesion between the heater electrode 200 and the sensor electrode 300 is improved by the tantalum oxide layer 700.

A solder metal is formed on the ends of the heater electrode pad 220 and the sensor electrode pad 320.

The soldering metal may be formed on top of the protective layer.

The soldering metal may be at least one of gold, silver, and tin.

The air gap 101 is formed in the substrate 100 so as to surround the heater wiring 210 and the sensor wiring 310. The air gap 101 is disposed around the heater wiring 210 and the sensor wiring 310.

The maximum width (width of the air) of the air gap 101 is formed to be wider than the maximum width of the pores 102. [

The air gap 101 is formed in an arc shape, and three air gaps 101 are formed. A plurality of air gaps (101) are arranged circumferentially spaced apart. That is, a plurality of air gaps 101 are discontinuously formed.

The air gap 101 is formed between the sensor electrode pad 320 of the first sensor electrode 300a and the first heater electrode pad 220a and between the first heater electrode pad 220a and the second heater electrode pad 220a, And between the second heater electrode pad 220b and the sensor electrode pad 320 of the second sensor electrode 300b. That is, the air gap 101 is formed in a region excluding the portion supporting the heater electrode 200 and the sensor electrode 300.

The air gap 101 is formed to penetrate in the vertical direction. That is, the air gap 101 is formed by removing all of the upper surface to the lower surface of the substrate 100. As described above, the air gap may be formed in a groove shape.

The substrate 100 is provided with the first supporting portion 110 and the heater electrode pad 220 and the sensor electrode pad 320 which commonly support the heater wiring 210 and the sensor wiring 310, The second supporting portion 120 is formed. That is, an air gap 101 is formed between the first supporting part 110 and the second supporting part 120. As the width of the air gap 101 is widened, the exothermic peak temperature becomes higher.

The first supporting portion 110 is formed in a circular shape similar to the heater wiring 210 and the sensor wiring 310 so that the first supporting portion 110 and the second supporting portion 120 are connected to each other And the other portions are spaced apart from each other due to the air gap 101. Accordingly, the first support portion 110 and the second support portion 120 are connected at three points.

The first support portion 110 is formed in a circular shape and is surrounded by an air gap 101.

The first supporting portion 110 is formed to be wider than the area of the heater wiring 210 and the sensor wiring 310.

The air gap 101 is formed to surround the first support portion 110.

Air is disposed in the air gap 101, the heat insulating effect is improved, the thermal conductivity is reduced, and the heat capacity can be reduced.

Further, a sensing material 400 covering the heater wiring 210 and the sensor wiring 310 is formed on the first supporting part 110.

That is, the sensing material 400 is formed at a position corresponding to the first supporting portion 110.

The sensing material 400 is formed by printing. After the sensing material 400 is formed by printing, a mesh network type mark is left on the surface of the sensing material 400 after the sensing material 400 is formed.

Hereinafter, the operation of the present embodiment having the above-described configuration will be described.

In order to measure the gas concentration, a constant power is first applied to the two heater electrode pads 220 of the heater electrode 200, and the sensing material 400 in the central portion of the sensor is heated to a predetermined temperature.

The change in the characteristic of the sensing material 400 that occurs when the gas existing around the sensing material 400 is adsorbed or desorbed in the sensing material 400 corresponds to the concentration of the sensing material 400, And measuring the electric potential difference between the sensor electrode pads 320 connected to the sensor electrode pad 320 to measure the electric conductivity of the sensing material 400.

Further, in order to measure more precisely, other gas species or moisture that have already been adsorbed to the sensing material 400 are heated at a high temperature by the heater electrode 200 to forcibly remove the sensing material 400 to restore the sensing material 400 to an initial state, Is measured.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims .

DESCRIPTION OF REFERENCE NUMERALS
100: substrate
200: heater electrode 210: heater wiring
300: sensor electrode 310: sensor wiring

Claims (20)

A substrate comprising a porous layer in which a plurality of pores are formed in a vertical direction and a barrier layer located in an upper portion of the porous layer;
And a heater electrode formed on the barrier layer. The method according to claim 1,
Wherein the heater electrode is formed using a liquid photoresist. 3. The method according to claim 1 or 2,
Wherein the substrate is formed by anodizing aluminum and then removing only aluminum. 3. The method according to claim 1 or 2,
Wherein a part of the barrier layer is removed so that the pores of the porous layer penetrate in a vertical direction. 3. The method according to claim 1 or 2,
Wherein the heater electrode is platinum, and a tantalum oxide layer is disposed between the substrate and the heater electrode. The method according to claim 1,
Wherein an air gap is formed in a region except for a portion supporting the heater electrode, the air gap being formed by removing all the portions from the top surface to the bottom surface of the substrate. The method according to claim 6,
Wherein a plurality of the air gaps are discontinuously formed. A substrate comprising a porous layer in which a plurality of pores are formed in a vertical direction and a barrier layer located in an upper portion of the porous layer;
A sensor electrode formed on the substrate;
And a heater electrode formed on the substrate,
Wherein at least one of the sensor electrode and the heater electrode is formed on the barrier layer. 9. The method of claim 8,
Wherein the sensor electrode or the heater electrode formed on the barrier layer is formed using a liquid photoresist. 10. The method according to claim 8 or 9,
Wherein the substrate is formed by anodizing aluminum and then removing only aluminum. 10. The method according to claim 8 or 9,
Wherein a part of the barrier layer is removed to allow the pores of the porous layer to pass through in a vertical direction. 10. The method according to claim 8 or 9,
Wherein at least one of the heater electrode and the sensor electrode is platinum, and a tantalum oxide layer is disposed between the substrate and the electrode formed of platinum. 9. The method of claim 8,
Wherein an air gap is formed in the region except for the portion supporting the heater electrode and the sensor electrode at all, from the top surface to the bottom surface of the substrate. 14. The method of claim 13,
Wherein a plurality of the air gaps are discontinuously formed. A porous layer substrate on which a plurality of pores are formed;
And a heater electrode formed on the substrate,
And the upper portion of the pore disposed under the heater electrode is clogged. 16. The method of claim 15,
And the upper portion of the pore disposed under the heater electrode is blocked by the barrier layer. 17. The method according to claim 15 or 16,
And a lower portion of the pore disposed below the heater electrode is opened. A porous layer substrate composed of a porous layer in which a plurality of pores are formed in an up and down direction and a barrier layer located in an upper portion of the porous layer,
A sensor electrode formed on the barrier layer of the porous layer substrate and including a sensor wiring and a sensor electrode pad connected to the sensor wiring;
A heater electrode formed on the barrier layer of the porous layer substrate and including a heater wire arranged closer to the sensor wire than the sensor electrode pad and a heater electrode pad connected to the heater wire; And
And an air gap formed by removing all of the upper surface to the lower surface of the porous layer substrate in a region excluding a portion supporting the sensor electrode and the heater electrode. A porous layer substrate composed of a porous layer in which a plurality of pores are formed in an up and down direction and a barrier layer located in an upper portion of the porous layer,
A first sensor electrode formed on the barrier layer of the porous layer substrate and including a first sensor wiring and a second sensor electrode pad connected to the first sensor wiring;
A second sensor electrode formed on a barrier layer of the porous layer substrate and spaced apart from the first sensor electrode, the second sensor electrode including a second sensor wiring and a second sensor electrode pad connected to the second sensor wiring;
A heater wiring formed on a barrier layer of the porous layer substrate and formed by surrounding at least a part of the first and second sensor electrodes from outside thereof, and first and second heaters connected to both ends of the heater wiring, A heater electrode including an electrode pad;
And an air gap formed between the first sensor electrode, the second sensor electrode, and the heater electrode, wherein the air gap is discontinuously removed from the upper surface to the lower surface of the porous layer substrate. A porous layer substrate made of a porous layer having a plurality of pores each having an open end and a closed end;
A sensor electrode formed on the other end of the porous layer substrate and including a sensor wiring and a sensor electrode pad connected to the sensor wiring;
A heater electrode formed on the other end of the porous layer substrate and including a heater wire arranged closer to the sensor wire than the sensor electrode pad and a heater electrode pad connected to the heater wire; And
And an air gap formed by removing all of the upper surface to the lower surface of the porous layer substrate in a region excluding a portion supporting the sensor electrode and the heater electrode.
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KR20190009535A (en) * 2017-07-19 2019-01-29 (주)포인트엔지니어링 Sensor for process atmosphere
KR20190035306A (en) * 2017-09-26 2019-04-03 (주)포인트엔지니어링 Filter for gas sensor pakage and gas sensor pakage having the same

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US20140272280A1 (en) * 2013-03-18 2014-09-18 Asian Institute Of Technology Anodized aluminum oxide nanoporous membrane integrated with micro-channel and method of formation thereof

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KR20090064693A (en) 2007-12-17 2009-06-22 한국전자통신연구원 Micro gas sensor and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190009535A (en) * 2017-07-19 2019-01-29 (주)포인트엔지니어링 Sensor for process atmosphere
KR20190035306A (en) * 2017-09-26 2019-04-03 (주)포인트엔지니어링 Filter for gas sensor pakage and gas sensor pakage having the same

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