KR20160145881A - An apparatus for manufacturing a semiconductor having a liftpin and a method of assembling the same - Google Patents

An apparatus for manufacturing a semiconductor having a liftpin and a method of assembling the same Download PDF

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Publication number
KR20160145881A
KR20160145881A KR1020150081831A KR20150081831A KR20160145881A KR 20160145881 A KR20160145881 A KR 20160145881A KR 1020150081831 A KR1020150081831 A KR 1020150081831A KR 20150081831 A KR20150081831 A KR 20150081831A KR 20160145881 A KR20160145881 A KR 20160145881A
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KR
South Korea
Prior art keywords
shaft
lift pin
cathode
screw structure
electrostatic chuck
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Application number
KR1020150081831A
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Korean (ko)
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KR101748252B1 (en
Inventor
김남헌
장휘곤
Original Assignee
에이피티씨 주식회사
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Priority to KR1020150081831A priority Critical patent/KR101748252B1/en
Publication of KR20160145881A publication Critical patent/KR20160145881A/en
Application granted granted Critical
Publication of KR101748252B1 publication Critical patent/KR101748252B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A semiconductor manufacturing facility having a lift pin includes an electrostatic chuck having at least one hole, a cathode disposed below the electrostatic chuck, and a portion disposed inside the cathode, the portion having a portion having a female screw structure And at least one lift pin inserted into the shaft through the hole, wherein the lift pin is configured as a screw structure at the end, and the end of the screw structure is screwed to the female screw portion in the shaft.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor manufacturing facility having a lift pin and a method of assembling the semiconductor manufacturing facility,

BACKGROUND OF THE INVENTION [0002] Various embodiments of the present disclosure are directed to semiconductor manufacturing facilities, and more particularly, to semiconductor manufacturing facilities having lift pins and methods of assembling semiconductor manufacturing facilities.

In the course of manufacturing a semiconductor device such as an integrated circuit, a substrate such as a semiconductor wafer, for example, needs to be placed on a substrate support, for example, an electro-static chuck (ESC). In many applications, it is desirable to automatically position the substrate on an electrostatic chuck in order to increase the yield of the manufacturing process. One means for this is to position the substrate on an electrostatic chuck by placing the substrate on a lift pin protruding from the electrostatic chuck and then lowering the lift pin into a hole inside the electrostatic chuck.

In general, the holes in the electrostatic chuck have a larger diameter than the lift pins, thereby preventing friction between the lift pins and the electrostatic chuck. So that even after the substrate is placed on the electrostatic chuck, a portion of the hole is still open. In this case, for example, in the process of performing plasma etching, etching radicals may flow into the rear surface of the substrate, thereby causing an unwanted etching of the back surface of the substrate.

Further, in order to efficiently transfer the thermal energy of the coolant supplied for temperature control of the substrate to the substrate, helium (He) can be supplied into the minute gap between the substrate and the electrostatic chuck. In this case, helium (He) flows into an empty space of the bellows housing surrounding the bellows for sealing the lift pin under the electrostatic chuck. This helium (He) acts as a plasma generating source by a bias RF applied to the electrostatic chuck. As a result, an impendance in a semiconductor manufacturing facility is changed, and the manufacturing process is undesirably affected have.

On the other hand, in order to assemble a semiconductor manufacturing facility having a lift pin, a cathode is first mounted in a semiconductor manufacturing facility, and an electrostatic chuck is mounted on the cathode. For example, three to four lift pins, so that when the electrostatic chuck is mounted, the lift pins mounted on the cathode must pass through the holes of the electrostatic chuck. However, in this process, the lift pin collides with the electrostatic chuck due to carelessness of the user, and the lift pin may be damaged. Also, even if the electrostatic chuck is normally mounted, the height of the lift pins protruding from the electrostatic chuck is equal to each other, so that the substrate should not be tilted. If the height of the lift pins is different, .

SUMMARY OF THE INVENTION A problem to be solved by the present application is to provide a plasma processing apparatus which has a sealing structure for suppressing undesirable plasma generation under the electrostatic chuck and radicals flowing under the electrostatic chuck, The present invention provides a semiconductor manufacturing facility having a lift pin that can be adjusted.

Another problem to be solved by the present application is to provide a method of assembling such a semiconductor manufacturing facility.

A semiconductor manufacturing facility having a lift pin according to one example includes an electrostatic chuck having at least one hole, a cathode disposed under the electrostatic chuck, a cathode disposed within the cathode, a portion disposed to protrude below the cathode, And at least one lift pin inserted into the shaft through the hole, wherein the lift pin is configured as a screw structure at an end portion, and an end of the screw structure is screwed into the female screw portion in the shaft with a screw fastening do.

The shaft may have a cylindrical shape.

The shaft may include an upper first shaft portion having a different diameter and a lower second shaft portion.

The first shaft portion may have a relatively larger diameter than the second shaft portion.

The first shaft portion may comprise a leaf spring surrounding the lift pin and a socket surrounding the leaf spring.

The second shaft portion may be constituted by a female screw structure which can be engaged with a screw of the lift pin.

And a housing surrounding the shaft.

And a quadring disposed to surround the shaft at a lower portion within the housing.

The quadring may have a structure in which vacuum grease is applied to the surface.

And a scraper disposed to surround the shaft at an upper portion of the housing to block the movement of the grease.

And a sealing ring arranged to surround the lift pin at an upper portion of the shaft.

The sealing ring may comprise an o-ring or quadring.

Another example of a semiconductor manufacturing facility includes an electrostatic chuck having at least one hole, a cathode disposed under the electrostatic chuck, and a cathode disposed within the cathode, the cathode disposed at a portion projecting downward from the cathode, A shaft including a lower second shaft portion, and at least one lift pin inserted into the shaft through the hole, wherein a socket is disposed within the first shaft portion to support a lift pin, And the lift pin is constituted by a screw structure at the end portion and the end portion of the screw structure is screwed with the female screw portion in the second shaft portion.

A method of assembling a semiconductor manufacturing facility according to an example includes preparing a cathode having a shaft including a first shaft portion at an upper portion and a second shaft portion at a lower portion of the female screw structure, Inserting a lift pin having an end of a screw structure into the hole of the electrostatic chuck; and screwing the screw structure of the lift pin and the female screw structure of the second shaft portion into a lift pin And setting a position in the vertical direction.

A method of assembling a semiconductor manufacturing facility according to another example comprises the steps of preparing a cathode having a shaft including a first shaft portion at the top and a second shaft portion at the bottom of the internal thread structure, Inserting a lift pin having an end of a screw structure into the hole of the electrostatic chuck; screwing the screw structure of the lift pin and the female screw structure of the second shaft portion into a lift pin And sealing the top of the shaft in contact with the lift pin with a sealing ring.

O-rings or quad rings may be used for the sealing rings.

According to various embodiments, the position of the lift pin in the vertical direction can be easily adjusted even after the assembling process and the assembly of the semiconductor manufacturing facility are performed, and suppression of undesired plasma generation due to the inflow of helium (He) There is provided an advantage that a semiconductor manufacturing facility having a lift pin and a method of assembling a semiconductor manufacturing facility can be provided.

1 is a partial cutaway view showing a semiconductor manufacturing facility having a lift pin according to an example.
Fig. 2 is a diagram showing the "A" portion of Fig. 1 in detail.
Fig. 3 is a view for explaining the configuration of the first shaft portion of Fig. 2. Fig.
Fig. 4 is a view showing the second shaft portion of Fig. 2; Fig.
FIG. 5 is a view for explaining a sealing structure of the semiconductor manufacturing facility of FIG. 1. FIG.
FIG. 6 is a graph showing the Paschen curve of the semiconductor manufacturing facility according to the present example for comparison with the conventional case.
7 is a view for explaining another structure of a shaft of a semiconductor manufacturing facility.

In the description of the examples of the present application, descriptions such as " first "and" second "are for distinguishing members, and are not used to limit members or to denote specific orders. Further, the description that a substrate located on the "upper", "lower", or "side" of a member means a relative positional relationship means that the substrate is in direct contact with the member, or another member The present invention is not limited to a particular case. It is also to be understood that the description of "connected" or "connected" to one component may be directly or indirectly electrically or mechanically connected to another component, Separate components may be interposed to form a connection relationship or a connection relationship.

1 is a partial cutaway view showing a semiconductor manufacturing facility having a lift pin according to an example. Referring to FIG. 1, the semiconductor manufacturing facility 100 according to the present embodiment may be an etching chamber using a plasma. The semiconductor manufacturing facility 100 includes a chamber outer wall 110 that defines an inner space in which a manufacturing process for the substrate is performed. In the semiconductor manufacturing facility 100, a cathode 120 is disposed. The cathode 120 may be formed in a cylindrical shape. The side portions of the cathode 120 together with the chamber outer wall 110 define the side space of the semiconductor manufacturing facility 100. An electrostatic chuck 130 is disposed on the upper surface of the cathode 120. The electrostatic chuck 130 has a plurality of holes 132 passing through the electrostatic chuck 130 in the vertical direction. The number of holes 132 may coincide with the number of lift pins used. In one example, the number of holes 132 may be approximately three to four.

Shafts (150) are disposed within the cathode (120). Each of the shafts 150 is aligned with each of the holes 132 of the correction chuck 130. Thus, the number of shafts 150 coincides with the number of holes 132. A portion of the lift pin 140 is disposed within the upper certain region of the shaft 150. The remaining portion of the lift pin 140 protrudes from the upper portion of the shaft 150 and is disposed inside the hole 132 of the electrostatic chuck 130. Each of the shafts 150 is disposed so as to protrude downward from the lower surface of the upper surface portion of the cathode 120. A portion of the projecting portion of each of the shafts 150 is surrounded by a housing 160. The housing 160 is surrounded by a cover 170. The shaft 150 protrudes from the lower surface of the cover 170 through the housing 160 and the cover 170. The end of the protruding portion of the shaft 150 is inserted into the lift pin holder 180 and is processed. The lower surface of the lift pin holder 180 is connected to an actuator 190. The actuator 190 can move in the vertical direction. The lift pin holder 180 and the shafts 150 can be moved in the vertical direction in conjunction with the vertical movement of the actuator 190 and the lift pins 140 Can also be moved in the vertical direction.

Fig. 2 is a diagram showing the "A" portion of Fig. 1 in detail. Referring to FIG. 2, a lift pin 140 is inserted into the hole 132 in the electrostatic chuck 130. A portion of the lift pin 140 protruding from the lower surface of the electrostatic chuck 130 is inserted into the shaft 150. The shaft 150 into which the lift pin 140 is inserted may be divided into a first shaft portion 151 and a second shaft portion 152. The first shaft portion 151 is a portion for supporting the lift pin 140 inserted from the lower surface of the static chuck 130. The second shaft portion 152 is a portion for allowing the lift pin 140 to move up and down.

3 is a view for explaining the configuration of the first shaft portion 151 of FIG. Referring to FIG. 3, the first shaft portion 151 includes a socket 151a disposed within the shaft 150. As shown in FIG. In one example, the socket 151a may have a cylindrical shape with a predetermined diameter. A leaf spring 151b is disposed inside the socket 151a. The lift pin 140 vertically penetrates the leaf spring 151b inside the socket 151a. The leaf spring 151b allows vertical movement of the lift pin 140 and supports the lift pin 140 once the lift pin 140 is positioned in the vertical direction.

4 is a diagram illustrating the second shaft portion 152 of FIG. Referring to FIG. 4, the second shaft portion 152 shown on the right side in the drawing is formed in a cylindrical shape having a smaller diameter than the first shaft portion 151. The screw portion 140a of the lift pin 140 may be inserted into the second shaft portion 152. [ The screw portion 140a of the lift pin 140 and the second shaft portion 152 are fastened together by a screw fastening structure. To this end, the screw portion 140a of the lift pin 140 has a screw structure and the second shaft portion 152 has a female screw structure. As the screw portion 140a and the second shaft portion 152 of the lift pin 140 are fastened in the screw structure, the vertical position of the lift pin 140 is fixed by the screw portion of the lift pin 140 140a and the second shaft portion 152 by adjusting the screw engagement positions of the first shaft portion 140a and the second shaft portion 152. [ For example, when the lift pin 140 is to be positioned lower in the vertical direction, the lift pin 140 can be positioned deeper downward by tightening the lift pin 140 in the fastening direction, have. On the other hand, when the lift pin 140 is to be placed higher in the vertical direction, the lift pin 140 is loosened in a direction in which the lift pin 140 is not fastened, for example, .

5 is a view for explaining the sealing structure of the semiconductor manufacturing facility 100 of FIG. In Fig. 5, the same reference numerals as those in Fig. 1 denote the same components. Referring to FIG. 5, in order to prevent a phenomenon that helium (He) supplied between the electrostatic chuck (130 in FIG. 1) and the substrate flows into the housing 160 to form undesired plasma, A scrapper 161 and a quad ring 162 are respectively inserted into the upper portion and the lower portion of the main body 160. A vacuum grease may be applied to the quad ring 162 to reduce the frictional resistance between the quad ring 162 and the shaft 150 and increase the sealing effect of the quad ring 162. [ The scraper 161 prevents the grease from flowing out into the internal reaction space which is a vacuum region through the gap between the housing 160 and the shaft 150 and blocks the movement of the grease.

FIG. 6 is a graph showing a Paschen curve of the semiconductor manufacturing facility 100 according to the present embodiment in comparison with the conventional case. In Fig. 6, Po represents the degree of vacuum and d represents the distance, in particular, Po represents the degree of vacuum in the shaft and d represents the diameter in the shaft. Referring to FIG. 6, the Parsen curve showing the relationship between the product of the pressure and the gap and the voltage as a condition under which the plasma discharge is induced is compared with the case of using the bellows (610) In the case of the manufacturing facility 100 (611), the discharge voltage is relatively high in the product of the vacuum degree and the distance. This means that the undesired plasma generation in the shaft 150 in the semiconductor manufacturing facility 100 according to the present embodiment is relatively suppressed.

1 to 5, a cathode 120 is installed in the semiconductor manufacturing facility 100, and an electrostatic chuck 130 is installed on the cathode 120 . Next, the lift pin 140 is inserted into the hole 132 of the electrostatic chuck 130. The inserted lift pin 140 is inserted through the socket 151a in the first shaft portion 151 to the second shaft portion 152. [ Next, the lift pin 140 and the second shaft portion 152 are screwed together so that the length of the protrusion of the lift pin 140 protruding above the electrostatic chuck 130 becomes a desired length. The process of assembling the lift pins 140 is performed in the same manner for the remaining lift pins. According to the present example, the protruding length of each of the plurality of lift pins 140 can be easily adjusted individually.

7 is a view for explaining another structure of a shaft of a semiconductor manufacturing facility. Referring to Fig. 7, the shaft 250 according to this embodiment is the same as the shaft 250 except that it does not use the socket (151a in Fig. 3) described with reference to Fig. 3 but uses the sealing ring 255 Do. The sealing ring 255 is disposed at a portion where the shaft 250 and the lift pin 140 are in contact with each other, particularly, at an upper portion of the shaft 250. The sealing ring 255 may be an O-ring 255a or may be a quad ring 255b. In the case of employing the shaft 250 according to the present embodiment, in assembling the semiconductor manufacturing facility, after setting the positions of the lift pins 140 such that the lift pins 140 are all projected from the upper surface of the electrostatic chuck by the same length, And the position of the lift pin 140 is fixed by using the ring 255.

Although the embodiments of the present application as described above illustrate and describe the drawings, it is intended to illustrate what is being suggested in the present application and is not intended to limit what is presented in the present application in a detailed form.

100 ... semiconductor manufacturing facility 110 ... chamber outer wall
120 ... Cathode 130 ... Electrostatic chuck
140 ... lift pin 150 ... shaft
160 ... housing 170 ... cover
180 ... Lift pin holder 190 ... Actuator

Claims (16)

An electrostatic chuck having at least one hole;
A cathode disposed below the electrostatic chuck;
A shaft disposed within the cathode, the shaft having a portion having a female screw structure at a lower portion and a portion projecting to a lower portion of the cathode; And
And at least one lift pin inserted into the shaft through the hole,
Wherein the lift pin is formed in a screw structure at an end portion, and an end portion of the screw structure is screwed with a female screw portion in the shaft. The method according to claim 1,
Wherein the shaft is formed in a cylindrical shape. 3. The method of claim 2,
Wherein the shaft comprises a first upper shaft portion and a second lower shaft portion having different diameters. The method of claim 3,
Wherein the first shaft portion has a relatively larger diameter than the second shaft portion. The method of claim 3,
Wherein the first shaft portion comprises a leaf spring surrounding the lift pin and a socket surrounding the leaf spring. The method of claim 3,
Wherein the second shaft portion is formed of a female screw structure which can be fastened to a screw of the lift pin. The method according to claim 1,
And a housing surrounding the shaft. 8. The method of claim 7,
And a quadring disposed to surround the shaft at a lower portion within the housing. 9. The method of claim 8,
Wherein the quadring has a structure in which vacuum grease is applied to a surface thereof. 10. The method of claim 9,
And a scraper arranged to surround the shaft at an upper portion within the housing to block movement of the grease. The method according to claim 1,
And a sealing ring arranged to surround the lift pin at an upper portion of the shaft. 12. The method of claim 11,
Wherein the sealing ring comprises an o-ring or quadring. An electrostatic chuck having at least one hole;
A cathode disposed below the electrostatic chuck;
A shaft disposed within the cathode, the shaft including a first shaft portion at an upper portion and a second shaft portion at a lower portion; And
And at least one lift pin inserted into the shaft through the hole,
A socket for supporting the lift pin is disposed in the first shaft portion, a female screw structure is disposed in the second shaft portion,
Wherein the lift pin is constructed with a screw structure at an end portion and an end portion of the screw structure is screwed with a female screw portion in the second shaft portion. Preparing a cathode having a shaft including a first shaft portion at an upper portion and a second shaft portion at a lower portion of the female screw structure;
Installing the cathode in a semiconductor manufacturing facility;
Providing an electrostatic chuck on the cathode;
Inserting a lift pin having an end of a screw structure into the hole of the electrostatic chuck; And
And screwing the screw structure of the lift pin and the female screw structure of the second shaft portion to set the position of the lift pin in the vertical direction. Preparing a cathode having a shaft including a first shaft portion at an upper portion and a second shaft portion at a lower portion of the female screw structure;
Installing the cathode in a semiconductor manufacturing facility;
Providing an electrostatic chuck on the cathode;
Inserting a lift pin having an end of a screw structure into the hole of the electrostatic chuck;
Setting a position of the lift pin in the vertical direction by screwing the screw structure of the lift pin and the female screw structure of the second shaft portion; And
And sealing the upper portion of the shaft in contact with the lift pin with a sealing ring. 16. The method of claim 15,
Wherein an o-ring or quadring is used as said sealing ring.
KR1020150081831A 2015-06-10 2015-06-10 An apparatus for manufacturing a semiconductor having a liftpin and a method of assembling the same KR101748252B1 (en)

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KR1020150081831A KR101748252B1 (en) 2015-06-10 2015-06-10 An apparatus for manufacturing a semiconductor having a liftpin and a method of assembling the same

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KR1020150081831A KR101748252B1 (en) 2015-06-10 2015-06-10 An apparatus for manufacturing a semiconductor having a liftpin and a method of assembling the same

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KR101748252B1 KR101748252B1 (en) 2017-06-19

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200136907A (en) * 2018-03-27 2020-12-08 배트 홀딩 아게 Pin lifting device with couplings for receiving and releasing support pins
DE102019008104A1 (en) * 2019-11-21 2021-05-27 Vat Holding Ag Method for monitoring, determining and positioning a pin lifting system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210076345A (en) 2019-12-16 2021-06-24 삼성전자주식회사 Lift pin module

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4951536B2 (en) * 2007-03-27 2012-06-13 東京エレクトロン株式会社 Substrate mounting table and substrate processing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200136907A (en) * 2018-03-27 2020-12-08 배트 홀딩 아게 Pin lifting device with couplings for receiving and releasing support pins
US11784086B2 (en) 2018-03-27 2023-10-10 Vat Holding Ag Pin lifting device with coupling for receiving and releasing a supporting pin
DE102019008104A1 (en) * 2019-11-21 2021-05-27 Vat Holding Ag Method for monitoring, determining and positioning a pin lifting system

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