TWM557448U - Semiconductor process equipment - Google Patents

Abstract

Semiconductor process equipment is provided, including an upper element, a lower element, an annular recess and an elastomer. The upper element is configured to hold a wafer, and has a first sidewall surface. The lower element is configured to hold the upper element, and has a second sidewall surface. The annular recess is between the lower element and the upper element, and adjacent to the first and second sidewall surfaces. The elastomer is disposed in the annular recess, and has a main body and a first extending portion connected to the main body. The first extending portion protrudes from the main body and the first sidewall surface, and extends along the first sidewall surface.

Description

Semiconductor process equipment

The present invention relates to a semiconductor process device, and more particularly to a semiconductor process device having an elastomer.

In today's semiconductor processes, wafers are often etched to form circuit patterns on the semiconductor. Plasma etching is a type of etching process that directs a high-speed ion current to a wafer to etch the surface of the wafer to form a circuit pattern. In order to maintain the position of the wafer under the high-speed ion current in the plasma etching process, an electrostatic chuck (ESC) is often used to generate an electrostatic force to fix the position of the wafer. However, under the action of the etching gas, the electrostatic adsorption retainer may also be damaged by the etching gas, which affects the process yield. Therefore, there is a need for a semiconductor process equipment that is less susceptible to damage to overcome the aforementioned problems.

In order to solve the aforementioned problems, an embodiment of the present invention provides a semiconductor processing apparatus for carrying a wafer including an upper component, a lower component, an annular recess, and an elastomer. The upper component is for carrying a wafer and has a first sidewall surface. The lower element is for carrying the upper element and has a second side wall surface. The annular recess is located between the lower member and the upper member and abuts the first and second side wall surfaces. The elastomer has a body connected to each other and a first extension, wherein the body is disposed in the recess, the first extension protruding from the body and the first sidewall surface and extending along the first sidewall surface.

In an embodiment, wherein the elastic body further has a second extension, the second extension protrudes from the body and the second sidewall surface and extends along the second sidewall surface.

In one embodiment, the semiconductor process device further includes a connection layer between the upper component and the lower component for connecting the upper component and the lower component.

In one embodiment, wherein the semiconductor processing device further has an outer member surrounding the upper member and the lower member, and corresponding to the first sidewall surface of the upper member and the second sidewall surface of the lower member, wherein the outer member and the first extension There is a distance between the parts.

In an embodiment, the elastic body further has a protrusion that abuts the outer member.

In an embodiment, wherein the top surface of the first extension is lower than the top surface of the upper component.

In one embodiment, the first extension has a width in a radial direction of one of the elastic bodies, and the width of the first extension ranges between 0.05 mm and 1.0 mm.

In one embodiment, wherein the elastomer has a bevel, the bevel is angled with the second sidewall surface of the lower member and the angle is an obtuse angle.

In an embodiment, wherein the elastic body has a stepped table Face, and the stepped surface abuts the slope.

In an embodiment, the elastic body further has an angled surface formed on one of the outer edges of the first extension, and the angled surface is beveled or rounded.

In one embodiment, the elastomer has a Fluoro-elastomer, a Perfluoro-elastomer or a Fluorosilicone material.

The above and other objects, features and advantages of the present invention will become more apparent and understood.

1‧‧‧Semiconductor process equipment

10‧‧‧Upper components

10A‧‧‧First side wall surface

10B‧‧‧ top surface

11‧‧‧Electrode

20‧‧‧lower components

20A‧‧‧Second side wall surface

22‧‧‧heating unit

24‧‧‧Cooling system

241‧‧‧Cooling fluid

26‧‧‧Fluid Supply System

261‧‧‧ fluid

30‧‧‧Connection layer

40‧‧‧ annular notch

45‧‧‧Epoxy resin

50‧‧‧ Elastomers

51‧‧‧Ontology

52‧‧‧First Extension

52B‧‧‧ top surface

521‧‧‧guide angle

53‧‧‧Second extension

54‧‧‧Bumps

55, 57‧‧‧ slope

56‧‧‧stepped surface

60‧‧‧ wafer

70‧‧‧Outer components

80‧‧‧etching gas

A, B‧‧‧ area

D‧‧‧Distance

Θ‧‧‧ angle

W ₁ ‧‧‧first width

W ₂ ‧‧‧second width

Fig. 1 is a cross-sectional view showing a semiconductor process apparatus according to a comparative example.

Fig. 2 is an enlarged schematic view showing the area A in Fig. 1.

3A is a cross-sectional view showing a semiconductor process apparatus according to an embodiment of the present invention.

Fig. 3B is an enlarged schematic view showing a region B in Fig. 3A.

Figure 4 is a partial schematic view showing a semiconductor process apparatus according to another embodiment of the present invention.

Fig. 5 is a partial schematic view showing a semiconductor process apparatus according to another embodiment of the present creation.

Figure 6 is a partial schematic view showing a semiconductor process apparatus according to another embodiment of the present creation.

Figure 7 shows a semiconductor process device according to another embodiment of the present creation Partial schematic.

Figure 8 is a partial schematic view showing a semiconductor process apparatus according to another embodiment of the present creation.

The semiconductor process equipment of the present embodiment will be described below. However, it will be readily appreciated that the present creative embodiment provides many suitable creative concepts and can be implemented in a wide variety of specific contexts. The specific embodiments disclosed are merely illustrative of the use of the present invention in a particular way, and are not intended to limit the scope of the present invention.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning meaning It will be understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the context or context of the present disclosure, and should not be in an idealized or overly formal manner. Interpretation, unless specifically defined herein.

Please refer to FIG. 1. FIG. 1 is a cross-sectional view showing a semiconductor processing apparatus according to a comparative example. The semiconductor processing apparatus described above can be used to carry a wafer 60 for etching or other processes, and includes primarily an upper component 10, a lower component 20, and an outer component 70. As shown in FIG. 1, the lower member 20 can carry the upper member 10, and the outer member 70 can be disposed around the upper member 10 and the lower member 20. A connecting layer 30 may be disposed between the upper member 10 and the lower member 20 for connecting the upper member 10 and the lower member 20. An annular recess 40 is formed at the interface of the upper element 10 and the lower element 20. In addition, an electrode 11 is disposed inside the upper component 10 for receiving electricity. Pressed and acted as an electrode, wherein the electrode 11 comprises a conductive material such as copper or tungsten. Since the etch rate of the wafer is affected by the wafer temperature, a heating unit 22 and a cooling system 24 may be disposed inside the lower member 20 to control the temperature of the lower member 20. The heating unit 22 may, for example, comprise a resistive material that heats the aforementioned resistive material through a power supply to provide thermal energy to the lower element 20. A cooling fluid 241 is introduced into the cooling system 24 for cooling the lower member 20. By the cooperation of the heating unit 22 and the cooling system 24, the temperature of the lower member 20 can be stably controlled so that the temperature of the lower member 20 does not affect the crystal. The temperature of the circle 60, in turn, avoids affecting the etch rate of the wafer 60. A fluid supply system 26 can be disposed on the lower member 20 for injecting a fluid 261 (such as helium) into the back surface of the wafer 60 through the connection layer 30 and the upper member 10, thereby transferring the thermal energy of the wafer. Adjust the temperature of the wafer and control the etch rate. Therefore, an epoxy resin 45 or a replaceable O-ring can be filled into the annular recess 40 to prevent contamination of the fluid from leaking through the annular recess 40 as it passes through the connecting layer 30.

However, please refer to Fig. 2, which shows an enlarged schematic view of the area A in Fig. 1. The epoxy resin 45 tends to be easily damaged by the etching of the etching gas 80 during the etching process, so that the aforementioned fluid leaks out. Further, as shown in Fig. 2, the etching gas 80 may also erode the upper member 10 and the lower member 20 at the same time, so that the structure inside the electrode 11 or the lower member 20 located inside the upper member 10 is exposed, and leakage or voltage abnormality is generated. The phenomenon.

Please refer to FIG. 3A-3B. FIG. 3A is a cross-sectional view showing the semiconductor processing apparatus 1 according to an embodiment of the present invention, which can solve the problems of the above comparative example. Fig. 3B is an enlarged schematic view showing a region B in Fig. 3A. It should be noted that, in this embodiment, the semiconductor processing device 1 can be used to carry the wafer 60, for example, to carry the wafer 60 in an etching process, and dry etch the wafer 60 by using the etching gas 80 or Plasma etching.

As shown in FIG. 3A, the semiconductor processing apparatus 1 mainly includes an upper component 10, a lower component 20, a connecting layer 30, an annular recess 40, an elastic and replaceable elastic body 50, and an outer component 70. . Further, the semiconductor processing apparatus 1 in Fig. 3A has the same internal configuration as that of Fig. 1 (i.e., the foregoing electrode 11, heating unit 22, cooling system 24, and fluid supply system 26), which will not be described below.

The upper component 10 is used to carry the wafer 60 and has a top surface 10B and a first sidewall surface 10A. The lower component 20 is located below the upper component 10 for carrying the upper component 10 and has a second sidewall surface 20A. The aforementioned annular recess 40 is formed at the junction of the upper member 10 and the lower member 20, and abuts the first and second side wall surfaces 10A, 20A. Furthermore, a connection layer 30 is provided between the upper element 10 and the lower element 20 for connecting the upper element 10 and the lower element 20.

As shown in FIG. 3B, the elastic body 50 has a body 51 and a first extension 52 connected to the body 51. The body 51 can be sleeved in the annular recess 40 and has a first width W ₁ in the radial direction (X-axis direction) of the elastic body 50. Further, the first extension portion 52 protrudes from the body 50 and the annular recess 40, and extends along the first side wall surface 10A of the upper member 10 toward the axial direction (Y-axis direction) of the elastic body 50. In addition, the first extending portion 52 has a second width W ₂ in the radial direction (X-axis direction) of the elastic body 50, and the range is substantially between 0.05 mm and 1.0 mm, wherein the first width W of the body 51 _{1 is} greater than the second width W _{2 of the} first extension 52. In this embodiment, the elastomer 50 may have a Fluoro-elastomer, a Perfluoro-elastomer or a Fluorosilicone material to improve the corrosion resistance to the etching gas.

Further, as shown in FIG. 3B, the first extension 52 has a top surface 52B in which the top surface 52B of the first extension 52 is lower than the top surface 10B of the upper member 10. Through the arrangement of the first extension portion 52 and the upper member 10, it can be ensured that the top surface 52B of the first extension portion 52 does not contact the wafer 60 carried by the upper member 10 to avoid affecting the positioning of the wafer 60.

It should be understood that since the elastomer 50 of the present embodiment can be periodically replaced before being eroded by the etching gas, the effect of protecting the semiconductor process equipment and improving the process yield can be enhanced. In addition, the first side wall surface 10A of the upper member 10 is further protected by the first extending portion 52 extending upward from the body 51 to prevent the first side wall surface 10A from being exposed to the inside of the upper member 10 due to the etching of the etching gas 80. Arcing or leakage current failure caused by the electrode 11.

The aforementioned outer member 70 is disposed outside the lower member 20 and surrounds the upper member 10 and the lower member 20. As can be seen from Fig. 3B, the outer member 70 is spaced from the first side wall surface 10A of the upper member 10 and the second side wall surface 20A of the lower member 20 by a distance D ranging between approximately 0.1 and 2.0 mm. It should be noted that the distance D may be greater than the second width W _{2 of the} first extension 52 such that a gap is formed between the outer element 70 and the first extension 52.

Fig. 4 is a partial schematic view showing a semiconductor process apparatus 1 according to another embodiment of the present creation. The embodiment is different from the embodiment of FIG. 3A-3B in that the elastic body 50 further has a second extension portion 53 connected to the body 51. The second extension portion 53 protrudes from the body 50 and the annular recess. 40 and extending along the second side wall surface 20A of the lower member 20 toward the axial direction (Y-axis direction) of the elastic body 50. In addition, the width of the second extending portion 53 in the radial direction (X-axis direction) of the elastic body 50 is substantially equal to the second width W _{2 of the} first extending portion 52. The second side wall surface 20A of the lower member 20 can be simultaneously protected by the second extending portion 53 extending downward from the body 51 to prevent the second side wall surface 20A from being exposed by the etching gas 80 to expose the inside of the lower member 20. Arcing or leakage current failure caused by the structure.

Fig. 5 is a partial schematic view showing a semiconductor process apparatus 1 according to another embodiment of the present creation. The difference between the embodiment and the embodiment of FIG. 4 is that the outer edge of the first extending portion 52 is formed with a guiding surface 521, whereby the etching gas 80 can be more smoothly introduced into the outer member 70 and the first extending portion 52. And a gap between the second extensions 53. Further, the guide surface 521 may be beveled or rounded.

Fig. 6 is a partial schematic view showing a semiconductor process apparatus 1 according to another embodiment of the present creation. The embodiment is different from the embodiment of FIG. 5 in that the elastic body 50 further has at least one protrusion 54 formed on the outer surface of the elastic body 50, and the abutting outer member 70 corresponds to the upper member 10 and the lower member. One side wall of 20. Through the arrangement of the aforementioned bumps 54, the position of the elastic body 50 can be fixed so as not to be displaced by the flow of the etching gas or the change of the process temperature, so as to prevent the elastic body 50 from losing the protection of the upper component 10 or The role of the lower element 20.

Fig. 7 is a partial schematic view showing a semiconductor processing apparatus 1 according to another embodiment of the present creation. The embodiment is different from the embodiment of FIG. 6 in that the annular recess 40 has a polygonal structure corresponding to the O-ring 50, wherein the elastic body 50 has two inclined faces 55, 57, a slope 55 and a lower member 20. An angle θ is sandwiched between the second side wall surfaces 20A, and the angle θ is an obtuse angle, and the inclined surface 57 abuts the upper member 10. Further, the elastic body 50 further has an L-shaped stepped surface 56 adjacent to the inclined faces 55 and 57. The elastic body 50 can extend through the interior of the lower member 20 through the arrangement of the slopes 55, 57 and the stepped surface 56, thereby facilitating the smooth removal of air inside the annular recess 40 when the elastomer 50 is mounted. The adhesion between the elastomer 50 and the lower member 20 is maintained.

Figure 8 is a partial schematic view showing a semiconductor processing apparatus 1 according to another embodiment of the present invention. This embodiment differs from the embodiment of Fig. 7 in that the stepped surface 56 of the elastomer 50 comprises two L-shaped structures and abuts the upper element 10, whereby the contact area of the elastomer 50 with the lower element 20 can be increased. To reinforce the fixing effect between the elastic body 50 and the lower member 20 and the upper member 10.

Although the embodiments of the present invention and its advantages have been disclosed as above, it should be understood that those skilled in the art can make changes, substitutions and refinements without departing from the spirit and scope of the present invention. In addition, the scope of protection of the present invention is not limited to the processes, machines, manufacturing, material compositions, devices, methods, and steps in the specific embodiments described in the specification, and any one of ordinary skill in the art may disclose the present disclosure. Understand current processes, machines, manufacturing, and materials developed in the future The composition, the device, the method and the steps can be used according to the present invention as long as they can perform the same function or obtain substantially the same result in the embodiments described herein. Therefore, the scope of protection of the present invention includes the above processes, machines, manufacturing, material compositions, devices, methods and steps. In addition, each patent application scope constitutes an individual embodiment, and the scope of protection of the present invention also includes the combination of each patent application scope and embodiment.

Although the present invention has been disclosed above in the foregoing several preferred embodiments, it is not intended to limit the present invention. Those who have ordinary knowledge in the technical field of the present invention can make some changes and refinements without departing from the spirit and scope of the present creation. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached. In addition, each of the patent application scopes constitutes a separate embodiment, and the scope of the various patent applications and combinations of the embodiments are all within the scope of the present invention.

Claims (11)

A semiconductor processing device for carrying a wafer, comprising: an upper component for carrying a wafer and having a first sidewall surface; a lower component for carrying the upper component and having a second sidewall surface; An annular recess between the lower member and the upper member and adjacent to the first and second side wall surfaces; and an elastic body having a body connected to each other and a first extension, wherein the body The first extension protrudes from the body and the first sidewall surface and extends along the first sidewall surface. The semiconductor process device of claim 1, wherein the elastomer further has a second extension protruding from the body and the second sidewall surface and along the second sidewall surface extend. The semiconductor process device of claim 1, wherein the semiconductor process device further comprises a connection layer between the upper component and the lower component for connecting the upper component and the lower component. The semiconductor process device of claim 1, wherein the semiconductor process device further has an outer component surrounding the upper component and the lower component, and corresponding to the first sidewall surface and the lower component of the upper component The second side wall surface is disposed with the outer element spaced from the first extension by a distance. The semiconductor process apparatus of claim 4, wherein the elastomer further has a bump that abuts the outer component. The semiconductor process set according to any one of claims 1 to 5 The top surface of the first extension is lower than the top surface of the upper component. The semiconductor process apparatus of claim 1 to 5, wherein the first extension has a width in a radial direction of one of the elastic bodies, and the width of the first extension ranges from 0.05 Between mm~1.0mm. The semiconductor process apparatus according to any one of claims 1 to 5, wherein the elastic body has a slope, the slope is at an angle with the second side wall surface of the lower member, and the angle is Obtuse angle. The semiconductor process apparatus of claim 8, wherein the elastomer further has a stepped surface, and the stepped surface abuts the slope. The semiconductor processing apparatus according to any one of claims 1 to 5, wherein the elastic body further has an angled surface formed on an outer edge of the first extending portion, and the guiding surface is inclined Corner or rounded corners. The semiconductor process apparatus according to any one of claims 1 to 5, wherein the elastomer has a material of a Fluoro-elastomer, a Perfluoro-elastomer or a Fluorosilicone.