KR20160142141A - Composition for thermistor and thermistor using the same - Google Patents

Abstract

The present invention relates to a composition for a thermistor and the thermistor using the same. According to the present invention, the composition for a thermistor substitutes a location of at least one of Mn, Ni, Cu, and Co from a cubic spinel-based complex oxide consisting of 50-72 mol% of Mn_3O_4, 20-26 mol% of NiO, 10-40 mol% of CuO, and 5-40 mol% of CoO, with 0.01-10 mol% of Ce and/or Y, thereby forming chemical equilibrium (AB204).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a composition for a thermistor,

The present invention relates to a composition for a thermistor and a thermistor using the same.

A thermistor is a heat sensitive semiconducting resistor, which is an electronic component that uses the property that the resistance of a material changes with temperature.

These thermistors are classified into a positive temperature coefficient (PTC) thermistor whose resistance increases when the temperature rises and a negative temperature coefficient (NTC) thermistor whose resistance decreases when the temperature rises.

Among them, NTC thermistors are increasingly used as temperature sensor parts, circuit temperature compensation parts, etc. due to the exponential decrease in resistance over a wide temperature range.

The NTC thermistor used in the temperature sensor is required to have a low resistance and a high B constant, because the higher the B constant, the better the sensitivity to the temperature change.

However, one of the important characteristics of the NTC thermistor, the B integer, is closely related to the resistivity value of the semiconductor ceramics and the physical property, so that the lower the resistivity value, the lower the B integer.

Since NTC thermistor materials with high B constants generally have high room temperature resistance, the importance of material technology capable of controlling the resistance of NTC thermistor materials with high B constants is emphasized.

Korean Patent Laid-Open Publication No. 1998-079879

It is an object of the present invention to provide a composition for a thermistor capable of controlling resistivity and improving B integer value.

Another object of the present invention is to provide a thermistor using the above composition.

The present invention has been made in order to provide a composition for a thermistor of a novel composition design capable of overcoming the characteristic limitations of conventional general thermistor materials and to provide a thermistor using the same.

To this end, one object of the present invention, in mol _{(mol)%, Mn 3 O} 4: 50 ~ 72%, NiO: 20 ~ 26%, CuO: 10 ~ 40% , and CoO: cubic consisting of 5 to 40% There is provided a composition for a thermistor in which a chemical equilibrium (AB2O4) is formed by substituting 0.01 to 10% of Ce and / or Y in at least one of Mn, Ni, Cu and Co in a spinel- .

Still another object of the present invention is to provide a plasma display panel comprising a plurality of spaced apart electrodes; And a thermistor layer formed between the plurality of electrodes so that at least a part thereof overlaps, the thermistor layer comprising a thermistor composition,

The composition for a base thermistor is a cubic spinel type composite oxide consisting of 50 to 72% of Mn ₃ O ₄ , 20 to 26% of NiO, 10 to 40% of CuO, and 5 to 40% of CoO, Is provided by providing a thermistor having a composition for a thermistor which is substituted by 0.01 to 10% of Ce and / or Y in at least one of Mn, Ni, Cu and Co to form a chemical equilibrium (AB2O4).

The composition for the thermistor according to the present invention has a wide range of specific resistivity control and high B water purification characteristics by controlling the composition of Mn-Ni-Cu-Co main composition and substituting CeO ₂ and / or Y ₂ O ₃ Lt; / RTI >

According to the present invention, it is possible to manufacture a low-resistance or high-resistance thermistor having a high B constant by using the thermistor composition, and the temperature sensing capability of these thermistors can be improved.

1 is a cross-sectional view of a stacked chip thermistor according to an embodiment of the present invention.
2 is a cross-sectional view of a thick-film chip thermistor according to an embodiment of the present invention.
3 is a cross-sectional view of a disc-shaped thermistor according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. The present embodiments are provided so that the disclosure of the present invention is complete and that those skilled in the art will fully understand the scope of the present invention. Like reference numerals refer to like elements throughout the specification.

The terms used herein are intended to illustrate the embodiments and are not intended to limit the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is to be understood that the terms 'comprise', and / or 'comprising' as used herein may be used to refer to the presence or absence of one or more other components, steps, operations, and / Or additions.

Hereinafter, a composition for a thermistor according to the present invention and a thermistor using the same will be described in detail with reference to the accompanying drawings.

Composition for thermistor

This embodiment relates to a composition for a thermistor including at least any one of minor substituents Ce and Y in the main composition of a Mn-Ni-Cu-Co composite oxide.

That is, the composition for the thermistor of the present embodiment is a composition of a Mn-Ni-Cu-Co cube-spinel type composite oxide, in which at least one of Ce and Y And the like.

Specifically, the composition for a thermistor according to the present embodiment is composed of 50 to 72% of Mn ₃ O ₄ , 20 to 26% of NiO, 10 to 40% of CuO, and 5 to 40% of CoO in mol% (AB2O4) by substituting Ce and / or Y at 10% or less, preferably 0.01 to 10% at a position of at least one of Mn, Ni, Cu and Co in a cubic spinel-based composite oxide .

In the main composition of the composite oxide in which Ni and Co metal components are added in a Mn-Cu system having a usual cubic spinel type crystal structure, at least one of Mn, Ni, Cu and Co is mixed with a small amount of Ce And / or Y.

The composition for the thermistor of the above composition is composed of a main transition metal such as Mn, Ni, Cu, and Co, and constitutes a negative temperature coefficient (NTC) thermistor composition.

The composition for the thermistor of the above composition chemically has a spinel structure represented by AB2O4, and the trivalent cation occupies a part of the A-site and the trivalent and the divalent cations occupy the B-site It corresponds to an intermediate mixed-spinel structure.

For example, the composition for a thermistor of this embodiment can be expressed by any one of the following general formulas (1), (2) and (3).

(1): {Mn ₂ Cu _x Co _(1-xy) Ce _y O ₄ } (where 0.2? X? 0.64, 0.04? Y? 0.16)

(Mn _{2 -XYZ} Cu _X Ni _Y Y _Z O ₄ ) (where 0.159? X? 0.20, 0.4? Y? 0.48, 0.001? Z? 0.16)

(Mn _3-XYZ Co _x Ni _Y Ce _Z O ₄ ) (wherein 0.16? X? 0.28, 0.36? Y? 0.40, 0.001? Z? 0.16)

Hereinafter, the role and content of each component included in the thermistor composition of the present embodiment will be described.

Mn

In this embodiment, Mn is the main component of the composition for the thermistor, and serves as electron hopping to the divalent or trivalent cations.

Such Mn is preferably added in the form of Mn ₃ O ₄ oxide in an amount of 50 mol% to 72 mol% based on the entire content of the thermistor composition.

In this case, it is suitable to maintain a single crystal phase in the crystal structure of cubic spinel structure, and it is advantageous in resistance control because it can fully utilize the electron hopping action of divalent, trivalent or tetravalent Mn cations on the stable crystal structure.

If the content of Mn ₃ O ₄ is less than 50 mol% based on the total content of the thermistor composition, oxygen deficiency is caused and the thermistor material can not be properly performed. On the other hand, if the content of Mn ₃ O ₄ exceeds 72 mol% based on the total content of the composition for a thermistor, Mn ₂ O _{3 as a} secondary phase on the crystal structure may be generated and the resistance and the B constant may be lowered.

Meanwhile, throughout this specification, the B constant means a value calculated by the following equation (1), wherein T ₀ is 25 ° C and T is 85 ° C.

(Where B is a thermistor constant, R is a resistance value of temperature T, R ₀ is a resistance value of temperature T ₀ , T is absolute temperature, and T ₀ is an arbitrary reference absolute temperature in the vicinity of room temperature)

Cu

In this embodiment, Cu mainly serves to control the sintering density.

Such Cu is preferably added in the form of CuO oxide in an amount of 10 mol% to 40 mol% based on the entire content of the thermistor composition.

On the other hand, when the content of CuO is out of the above range, the sintering density control effect is insufficient and the resistance and B constant may be lowered.

Ni, Co

In this embodiment, Ni or Co is a 3d transition metal, and the electrons are balanced in the thermistor composition.

That is, in the composition of the thermistor, Ni or Co serves to maintain the equilibrium of the atomic molar ratio that forms the cubic spinel structure.

It is preferable that such Ni is added in the form of NiO oxide in an amount of 20 mol% to 26 mol% based on the entire content of the thermistor composition.

Co is preferably added in the form of a CoO oxide in an amount of 5 mol% to 40 mol% based on the entire content of the thermistor composition.

In this embodiment, the content of the Ni or Co oxide is freely adjustable within the above-mentioned range as long as the equilibrium of the atomic molar ratio in the composition of the thermistor and the factor determined by the content of Mn and Cu oxide is maintained.

However, if the content of CoO exceeds 40 mol% with respect to the total content of the thermistor composition, the magnetic properties become stronger than the electrical characteristics, which may result in deterioration of characteristics of the device due to signal interference or electromagnetic interference.

Ce, Y

In the present embodiment, Ce or Y is a substitution component which is substituted in at least one position of the metal contained in the main composition of Mn-Ni-Cu-Co system.

The purpose of replacing at least one of Ce and Y is to improve the B constant by facilitating the resistance control of the thermistor.

Specifically, in this embodiment, Ce or Y having a relatively large atomic number is substituted in the rare earth metal. This is because Ce or Y is relatively more cost competitive than other rare earth materials and exhibits tetravalent cation electrons in the 4f orbit. Therefore, when substituting Mn, Ni, Cu and Co moieties for casting, Thereby promoting resistance control. When the substitution of Ce or Y is performed and the resistance is controlled well, the thermistor composition has a high B integer value.

Of these, Ce has a higher atomic number than Y, and its resistance control effect becomes more pronounced as the resistance decreases. Therefore, it is more suitable for the development of a low-resistance and high-density thermistor.

For example, each of Ce and Y is in the form of an oxide of CeO ₂ or Y ₂ O _{3 in} an amount of 10 mol% or less based on the total amount of the composition for the thermistor, May be added in an amount of 0.01 mol% to 10 mol%.

At this time, if the content of CeO ₂ or Y ₂ O ₃ is less than 0.01 mol% based on the total amount of the composition for thermistor, the effect of improving the B constant may be insufficient or insufficient. On the other hand, if the content of CeO ₂ or Y ₂ O ₃ exceeds 10 mol% based on the total content of the composition for thermistor, a secondary phase on the crystal structure may be generated and the resistance and B constant characteristics may be deteriorated.

The composition for a thermistor of this embodiment has the same configuration, Mn-Ni-Cu-Co controls the main composition at a predetermined ratio and, CeO ₂ and / or Y ₂ O ₃ with a very small amount of hundreds resistivity through a composition designed to replace the Ω㎝ And it was possible to increase the B constant to 3000K or more. This is due to the fact that electron-hopping between atoms is facilitated through substitution of Ce and / or Y metal to increase resistance control effect.

As a result, the composition for the thermistor of this embodiment has a characteristic of a resistivity of 100? Cm to 200 k? Cm and a B _25/85 constant of 3000K to 4700K, preferably 4000K or more.

Further, the composition for the thermistor of the present embodiment is _applicable to a low-resistance thermistor product having a high B _25/85 constant of 3000 K or more and a resistivity of 1000 Ω or less.

Further, the composition for the thermistor of this embodiment is applicable to a high-resistance thermistor product having a resistivity of 100 k? Cm or more at a B _25/85 constant of 4000 K or more.

As described above, when Mn-Ni-Cu-Co spinel-based oxide powder having a main composition of Mn, Ni, Cu, Co oxide raw materials and a small amount of CeO ₂ and Y ₂ O ₃ is used, And B constants can be remarkably improved. In this case, the temperature sensing capability of the device can be further enhanced in the device manufactured using the resistivity and B integer value of the material.

In addition, the composition for the thermistor of this embodiment can have a sintered density characteristic of 3.9 g / cc or more, preferably 4.5 g / cc or more by the above composition design.

This means that the thermistor composition is stable as a ceramic and is excellent in stability of electrical characteristics and physical stability to withstand heat and mechanical shock, and reliability of the product using the same can be improved.

The composition for the thermistor of this embodiment can be sintered at a sintering temperature of 800 ° C to 1200 ° C, preferably 850 ° C, by the above compositional design.

On the other hand, the composition for the thermistor of the present embodiment may further comprise a glass-type additive in a Mn-Ni-Cu-Co spinel complex oxide in which CeO ₂ and Y ₂ O ₃ are substituted with a small amount.

Such glass additive may be at least one selected from BaO, B ₂ O ₃ , Al ₂ O ₃ , Bi ₂ O ₃ and the like, and serves to promote sintering.

In addition, the glass additive makes the composition for the thermistor more reliable. That is, the glass additive serves to reduce the resistance change of the thermistor under high temperature / low temperature and high humidity and the resistance change due to thermal shock.

For this purpose, the glass additive is preferably added in an amount of 0.01 to 20% by weight relative to the solid content in the thermistor composition, that is, the calcination powder for the thermistor.

Here, the calcination powder for the thermistor may be a powder obtained by weighing, milling, drying and pulverizing a thermistor material having a spinel structure and then calcining at a temperature of approximately 800 to 1200 ° C.

If the content of the glass additive is less than 0.01% by weight based on the calcined powder in the composition for the thermistor, the effect may be insufficient. On the other hand, if it exceeds 20% by weight, the resistance and the B constant may decrease.

An example of a process for producing the thermistor composition according to the present embodiment is as follows.

First, a thermistor material having a spinel structure is prepared. At this time, Mn ₃ O ₄ , NiO, CoO, CuO and CeO ₂ and / or Y ₂ O ₃ are prepared as the thermistor raw materials, and they are weighed. The thermistor raw material is then liquid milled and then dried in a drying oven to obtain a dry powder. Thereafter, the obtained dried powder is pulverized and then calcined at a temperature of 800 ° C to 1200 ° C to obtain a calcined powder. The calcination is carried out at a temperature and for a time such that the Mn oxide phase, which is the secondary phase, is produced as little as possible (or not).

Then, 0.01 to 20 wt% of at least one glass additive selected from BaO, B ₂ O ₃ , Al ₂ O _3, and Bi ₂ O ₃ is added to the calcined powder, followed by pulverization by milling and finally heat treatment at 850 ° C. Thereby constituting a composition for an NTC thermistor containing an NTC thermistor powder.

The molar percent of the NTC thermistor powder is 50.0 to 72.0% of Mn ₃ O ₄ , 20.0 to 26.0% of NiO, 10.0 to 40.0% of CuO, 5.0 to 40.0% of CoO, 0.01 to 10.0% of CeO ₂ and / Or Y ₂ O ₃ : 0.01 to 10.0%.

The above-described composition for the thermistor of the present embodiment is suitable for use in a low-resistance or high-resistance NTC thermistor product that is formed into a sheet or has a high B constant in a paste state, and a specific example thereof will be described later.

Thermistor

Hereinafter, a thermistor manufactured using the composition for a thermistor of this embodiment will be described. At this time, since the composition for the thermistor used for the thermistor is the same as that described above, a duplicate description will be omitted.

1 is a cross-sectional view of a stacked chip thermistor according to an embodiment of the present invention, and is a representative example of chip elements.

1, a multilayer chip thermistor 100 according to an embodiment of the present invention includes a chip-shaped thermistor body 110 and an external electrode 120 formed on the surface of the thermistor body 110.

The thermistor body 110 is a body of a thermistor having a rectangular parallelepiped shape in which a plurality of thermistor layers 112 are stacked and an inner electrode 114 is inserted between the plurality of thermistor layers 112 .

In this case, the thermistor layer 112 comprises an NTC thermistor material composition in the present embodiment, the thermistor compositions, such as CeO ₂ and / or Y ₂ O ₃ is the total Mn-Ni-Cu-Co substituted in trace amounts spinel composite oxide for do.

The internal electrode 114 is printed on a green sheet composed of the thermistor composition of the present embodiment, and a plurality of green sheets on which the internal electrodes 114 are printed are laminated, So that it is made in a body shape. Here, the green sheet is prepared by forming a slurry from a raw material in which the composition for a thermistor of the present embodiment is mixed, and then shaping the slurry into a sheet.

The plurality of internal electrodes 114 are spaced from each other by alternately stacked thermistor layers 112, and one end and the other end are exposed to one side and the other side. The internal electrode 120 may be formed of a conductive material, for example, a noble metal such as Pt, Ag, Pd, or Au, or an alloy thereof.

The thermistor body 110 includes an NTC thermistor material. Since the resistance of the NTC thermistor material decreases as the temperature rises, a current can flow between the internal electrodes 114 formed at a predetermined temperature range, Can be used as a sensor.

The outer electrode 120 is formed on the outer surface of the thermistor body 110 such as at both ends and is electrically connected to the inner electrode 114 at one side and the other side to transmit resistance of the element in the thermistor body 110 to the outside It is a role to do.

The outer electrode 120 may be formed of a metal layer and a plating layer sequentially stacked on the thermistor body 110. At this time, the metal layer may be formed of a sintered metal thin film which is sintered after a conductive paste containing a metal such as silver (Ag) or copper (Cu) is applied and then sintered.

Of the layers constituting the external electrode 120, the plating layer is formed for the purpose of preventing the oxidation of the metal layer and improving the solderability, and is formed by a plating process. Such a plating layer may be formed as a single layer or a multilayer using nickel (Ni), tin (Sn), copper (Cu) or the like. The plating layer is formed by plating a metal such as Ni, Sn, Cu or the like on the surface of the metal layer by dipping the thermistor body 110 in which a metal layer is formed in the plating liquid, To 900? Lt; RTI ID = 0.0 >%, < / RTI >

Although not shown in the drawing, the thermistor body 110 may further include a floating electrode that is spaced apart from the internal electrode 114 without being electrically connected to the external electrode 120. The number, position, and the like of the internal electrodes 114 may be variously changed according to the design.

2 is a cross-sectional view of a thick film chip thermistor according to an embodiment of the present invention, showing another example of a chip device.

2, a thick film chip thermistor 200 according to an embodiment of the present invention includes a substrate 210, an inner electrode 220 formed at both ends of the substrate 210, an inner electrode 220, A thick film thermistor layer 230 formed on the substrate 210 between the inner electrodes 220 which are spaced apart from each other and a protective layer 240 surrounding the thick film thermistor layer 230 and the inner electrode 220, And an external electrode 250 formed on an outer surface of the first electrode 210.

At this time, the thick film thermistor layer 230 is an NTC thermistor material composition in the present embodiment, the thermistor composition, for example, CeO ₂ and / or Y ₂ O ₃ is the total Mn-Ni-Cu-Co substituted in trace amounts spinel composite oxide .

The thick film thermistor layer 230 is formed by baking a paste for a thick film thermistor manufactured by adding an organic vehicle to the thermistor composition of the present embodiment.

The substrate 210 may be a ceramic substrate such as alumina (Al ₂ O ₃ ).

The protective layer 240 prevents the thick film thermistor layer 230 from being exposed to the outside, and may be formed of a glass material, a polymer resin, or the like, but is not limited thereto.

The thick film chip thermistor 200 is formed by printing a conductive paste on both ends of the substrate 210 and then firing the same to form the internal electrode 220. Then the internal electrode 220 spaced apart from the upper surface of the internal electrode 220 Forming a thick film thermistor layer 230 by printing and firing a thick film thermistor paste on a substrate 210 between the substrate 210 and the substrate 210.

The inner electrode 220 and the outer electrode 250 are formed in the same manner as the inner electrode 114 and the outer electrode 120 of FIG. 1 except for the material and the forming position.

3 is a cross-sectional view of a disc-shaped thermistor according to an embodiment of the present invention.

3, a disc-shaped thermistor 300 according to an embodiment of the present invention includes a disc-shaped thermistor body 310, electrodes 320 formed on both surfaces of the thermistor body 310, (Not shown).

In this case, the thermistor body 310 comprises an NTC thermistor material composition in the present embodiment, the thermistor composition, for example, CeO ₂ and / or Y ₂ O ₃ is the total Mn-Ni-Cu-Co substituted in trace amounts spinel composite oxide do.

This thermistor main body 310 is a thermistor sintered body formed by baking after the composition for a thermistor of this embodiment is formed into a disk-shaped molded body.

The pair of electrodes 320 are spaced apart from each other with the thermistor body 310 interposed therebetween and a conductive paste such as a silver (Ag) electrode may be applied to the front and rear surfaces of the thermistor body 310.

The lead wire 330 may be attached to the electrode 320 using a method such as soldering. In Fig. 3, the two lead wires 330 are drawn in a side-by-side direction, but may be drawn in different directions according to design, and may include bends.

The disc-shaped thermistor 300 may further include a protective layer 340 covering the thermistor body 310 and the electrode 320. The protective layer 340 may be formed of a polymer resin such as silicon or epoxy.

The thermistors 100, 200, and 300 of this configuration include an NTC thermistor material made of a Mn-Ni-Cu-Co spinel type composite oxide having CeO ₂ and / or Y ₂ O ₃ The resistivity is controlled to 100? Cm to 200 k? Cm in a wide range, and is manufactured as an NTC thermistor having a high B _25/85 constant characteristic of 3000K to 4700K, thereby improving the temperature sensing capability of the device when used as a temperature sensor have.

In addition, the thermistors 100, 200, and 300 having such a structure can further reduce the resistance change ratio due to relatively high temperature / low temperature, high humidity, thermal shock, and the like by adding glass additives to the NTC thermistor material.

For the sake of convenience of explanation, the present invention is limited to the laminate type, the thick film type and the disc type thermistor using the composition for the thermistor of this embodiment. However, the present invention is not limited thereto, And it can be applied to various electronic parts requiring low resistance or high resistance at the same time.

Example

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.

One. Preparation of sample

Specimens 1 to 11 of NTC thermistor compositions according to Examples 1 to 11 were prepared with the compositions shown in Table 1.

Examples 1 to 11

The thermistor raw materials were weighed according to the composition shown in Table 1. The weighed raw materials were then liquid milled and then dried in a drying oven at 120 DEG C to obtain a dry powder. Then, the dried powder was pulverized and calcined at 800 ° C to 1200 ° C for 2 hours according to the composition to obtain a calcined powder.

Then, BaO was added in the range of 0.01 to 0.5 wt% as a sintering additive to the calcined powder according to each composition. Subsequently, the calcined powder to which the sintering additive was added was further subjected to liquid-phase milling to produce a thermistor powder.

Then, PVA (polyvinyl alcohol) binder solution was added to the thermistor powder, and pressed at a pressure of 2 ton / m ² to prepare a disk-type 14 mm diameter sintered specimen. Finally, the specimens were sintered at 1000 ℃ to complete the final specimen.

2. Property evaluation

Resistivity of each specimen was measured at 25 캜 and 85 캜 according to the densities of Specimens 1 to 11 according to Examples 1 to 11, and the resistivity and B-constants were calculated. The results are shown in Table 2.

Referring to Tables 1 and 2, Examples 1 to 11 satisfying the thermistor composition range of the present invention all satisfied the sintered density of 3.9 g / cc or more and the B range of 3000K to 4700K.

In Examples 1 to 11, it was confirmed that the B constant was 3000 K or more and the resistivity was controlled in the range of 117? Cm to 168 k? Cm.

Specifically, in Examples 1 to 3 in which Ce is substituted for the Mn-Cu-Co thermistor composition, a low-resistance thermistor product having a B constant of 4000K period and a resistivity of several hundreds of? Cm and a B constant of 4000K or more And it can be applied.

Examples 8 and 11, in which Ce is substituted for the Mn-Co-Ni thermistor composition, have a B constant of 4000K and a resistivity of several hundreds of kΩcm, and can be applied to a high-resistance thermistor product having a high B constant of 4000K or more there was.

In Example 7 in which Y is substituted for the Mn-Cu-Ni thermistor composition, it is possible to apply the present invention to a low-resistance thermistor product having a B constant of 4000K or less and a resistivity of several hundreds of ohm- Could know.

Consequently, according to the present invention, it is possible to design a thermistor composition that can be applied to low resistance and high resistance products at a B constant of 3000K or more, preferably 4000K or more.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, and that various changes, substitutions and alterations can be made therein without departing from the spirit and scope of the invention. However, it should be understood that such substitutions, changes, and the like fall within the scope of the following claims.

100: stacked chip thermistor 110, 310: thermistor body
112: thermistor layer 114, 220: internal electrode
120, 250: external electrode 200: thick film chip thermistor
230: thick film thermistor layer 240, 340: protective layer
300: disc-shaped thermistor 320: electrode
330: Lead wire

Claims (14)

In a cubic spinel composite oxide consisting of 50 to 72% of Mn ₃ O ₄ , 20 to 26% of NiO, 10 to 40% of CuO and 5 to 40% of CoO, Wherein at least one of Mn, Ni, Cu and Co is substituted with 0.01 to 10% of Ce and / or Y to form a chemical equilibrium (AB2O4).
The method according to claim 1,
The composition for the thermistor
B _25/85 integer of 3000K to 4700K.
3. The method of claim 2,
The composition for the thermistor
B _25/85 Composition for a thermistor _{wherein the} integer is 4000 K or more.
The method according to claim 1,
The composition for the thermistor
Wherein the resistivity at 25 占 폚 is from 100? Cm to 200?? Cm.
The method according to claim 1,
The composition for the thermistor
A composition for a thermistor having secondary temperature coefficient characteristics.
The method according to claim 1,
The composition for the thermistor
Wherein the sintered density is 3.9 g / cc or more.
The method according to claim 1,
Wherein the thermistor composition is represented by any one of the following general formulas (1), (2) and (3).
(1): {Mn ₂ Cu _x Co _(1-xy) Ce _y O ₄ } (where 0.2? X? 0.64, 0.04? Y? 0.16)
(Mn _{2 -XYZ} Cu _X Ni _Y Y _Z O ₄ ) (where 0.159? X? 0.20, 0.4? Y? 0.48, 0.001? Z? 0.16)
(Mn _3-XYZ Co _x Ni _Y Ce _Z O ₄ ) (wherein 0.16? X? 0.28, 0.36? Y? 0.40, 0.001? Z? 0.16)
The method according to claim 1,
The composition for the thermistor
Further comprising at least one glass additive selected from BaO, B ₂ O ₃ , Al ₂ O _3, and Bi ₂ O ₃ .
The method according to claim 1,
The composition for the thermistor
A composition for a thermistor having a sintering temperature of 800 ° C to 1200 ° C.
A plurality of spaced apart electrodes; And
And a thermistor layer formed between the plurality of electrodes so that at least a part thereof overlaps the thermistor layer,
The composition for the thermistor,
By mole _{(mol)%, Mn 3 O} 4: 50 ~ 72%, NiO: 20 ~ 26%, CuO: 10 ~ 40% , and CoO: in cubic spinel composite oxide consisting of 5 ~ 40%, Mn, Ni , And a chemical balance (AB2O4) in which at least one of Cu and Co is substituted with 0.01 to 10% of Ce and / or Y.
11. The method of claim 10,
The thermistor
A B _25/85 constant of 3000K to 4700K, and a specific resistance at 25 캜 of 100 Ωcm to 200 kΩcm.
11. The method of claim 10,
The composition for the thermistor
Thermistor with secondary temperature coefficient characteristics.
11. The method of claim 10,
The thermistor
Thermistor as temperature sensor.
11. The method of claim 10,
The composition for the thermistor
Further comprising at least one glass additive selected from BaO, B ₂ O ₃ , Al ₂ O _3, and Bi ₂ O ₃ .

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