KR20160141245A - Substrate treating apparatus of furnace type, cluster equipment for treating substrate, and substrate processing method - Google Patents

Substrate treating apparatus of furnace type, cluster equipment for treating substrate, and substrate processing method Download PDF

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Publication number
KR20160141245A
KR20160141245A KR1020150076198A KR20150076198A KR20160141245A KR 20160141245 A KR20160141245 A KR 20160141245A KR 1020150076198 A KR1020150076198 A KR 1020150076198A KR 20150076198 A KR20150076198 A KR 20150076198A KR 20160141245 A KR20160141245 A KR 20160141245A
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South Korea
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substrate
nozzle
sub
process gas
gas
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KR1020150076198A
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Korean (ko)
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KR101785330B1 (en
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이성광
박용성
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국제엘렉트릭코리아 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The present invention provides a cluster equipment capable of forming an even membrane. According to the present invention, the cluster equipment includes: an equipment front end module (EFEM) having load ports wherein a cassette on which substrates are loaded is placed; a first load lock chamber connected to the EFEM by a gate valve and capable of selectively changing an inner space to be in a state of atmospheric pressure and vacuum pressure; a transfer chamber connected to the first load lock chamber by the gate valve and including a transfer device for transferring a substrate; second load lock chambers connected to the transfer chamber by the gate valve and including a substrate loading unit in which the substrates are arranged and loaded; and process chambers arranged in the upper part of each of the second load lock chambers and treating the substrates loaded on the substrate loading unit. Each of the process chambers includes: a processing tube including an inner tube accommodating the substrate loading unit and an outer tube enclosing the inner tube; a rotation unit rotating the substrate loading unit; a heater assembly enclosing the processing tube; a side main nozzle unit vertically installed on the inner side of the inner tube and having a main nozzle injecting processing gas in a first direction passing through the center of the substrate loaded on the substrate loading unit; and a sub nozzle vertically installed on the inner side of the inner tube and injecting the processing gas in a second direction different from the first direction to control the thickness of the membrane at the edge of the substrates loaded on the substrate loading unit.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a furnace type substrate processing apparatus, a cluster facility for substrate processing, and a substrate processing method,

The present invention relates to a furnace type substrate processing apparatus for forming a thin film on a substrate, a cluster facility for substrate processing, and a substrate processing method.

Generally, an insulating film such as an oxide film or a nitride film is formed on a predetermined region of a semiconductor substrate to expose a predetermined region of the semiconductor substrate, and a step of growing an identical or different semiconductor film having the same crystal structure on the exposed semiconductor substrate is selectively performed Called " Selctive Epitaxial Growth (SEG) ". The use of selective epitaxial growth is advantageous in that it is easy to fabricate a semiconductor device having a three-dimensional structure, which is difficult to manufacture with conventional flat plate technology. In a process involving this selective epitaxial growth (SEG), the gas supply and gas distribution on the substrate are very important.

However, in the conventional arrangement type selective single crystal growth apparatus, there is a problem that film uniformity after film formation is deteriorated according to characteristics (deposition tendency or etching tendency) of the supplied gas.

That is, in the process using the deposition gas, the supply gas injected from the nozzle first reacts with the edge of the substrate and is exhausted to the exhaust port through the center of the substrate, thereby increasing the thickness of the substrate edge portion and the thickness of the center portion Lt; / RTI >

On the contrary, in the process of using the etching gas of the feed gas, contrary to the above-mentioned phenomenon, the edge portion becomes thin due to the etching effect of the feed gas and the central portion becomes thick.

Embodiments of the present invention provide a furnace type substrate processing apparatus for uniform film formation, a cluster facility for substrate processing, and a substrate processing method.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to one aspect of the present invention, a process tube; A substrate loading unit positioned within the process tube; A side main nozzle unit vertically installed inside the process tube and having a main nozzle for spraying a process gas in a first direction passing through the center of the substrate mounted on the substrate loading unit; And at least one subnozzle vertically installed inside the process tube and injecting the process gas in a second direction different from the first direction to adjust the film thickness of the edge of the substrates loaded on the substrate loading unit To provide a furnace-type substrate processing apparatus including the furnace.

In addition, the angle between the second direction and the first direction may be close to perpendicular.

Further, the second direction may be directed to the center of the substrate loaded in the substrate loading unit.

In addition, the installation position of the sub nozzle may be positioned within a range of 80-100 ° from the main nozzle with respect to the center of the substrate stacking unit as viewed from a plane.

The apparatus may further include a gas supply unit for supplying a process gas to the main nozzle and the sub nozzle. The gas supply unit may supply an amount of the process gas supplied to the sub nozzle at a ratio different from the amount of the process gas supplied to the main nozzle.

Further, the gas supply unit supplies the process gas of the deposition tendency and the process gas of the etching tendency respectively; The main nozzle and the sub nozzle may be supplied with process gases of different tendencies.

The apparatus may further include a boat rotation unit for rotating the substrate loading unit.

In addition, the process tube may be provided in a dome shape in which the top portion is closed, and may include a main cutout portion located on one side thereof and aligned with the main nozzle.

In addition, the sub-nozzle may be positioned between the main nozzle and the main cut-out portion.

The sub-nozzle may include a first sub-nozzle and a second sub-nozzle, and the first sub-nozzle and the second sub-nozzle may be disposed to face each other with respect to the substrate.

In addition, the first sub-nozzle and the second sub-nozzle may inject the process gas toward the center of the substrate loaded in the substrate loading unit.

In addition, the first sub-nozzle and the second sub-nozzle may inject the process gas toward the edge of the substrate off-center of the substrate mounted on the substrate stacking unit.

In addition, the process tube may be provided in a dome shape having a closed top, a main cutout located on one side and aligned with the main nozzle; And a first sub-incision portion and a second sub-incision portion formed side by side on both sides of the main incision portion.

Also, the first sub-cutout portion may be positioned on a straight line with the ejection direction of the first sub-nozzle, and the second sub-cutout portion may be positioned on a straight line with the ejection direction of the second sub-nozzle.

The side nozzle portions are disposed side by side with the main nozzle interposed therebetween, and the side curtain nozzles inject inert gas for improving the straightness of the process gas injected from the main nozzle. And a pre-depo nozzle for precoating the inner tube.

According to an aspect of the invention, there is provided an apparatus front end module (EFEM) having load ports on which cassettes loaded with substrates are placed; A first load lock chamber connected to the facility front end module through a gate valve and having an internal space capable of selective switching to atmospheric pressure and vacuum pressure; A transfer chamber connected to the first load lock chamber through a gate valve and having a transfer device for substrate transfer; Second load lock chambers connected to the transfer chamber via a gate valve, the second load lock chambers having a substrate loading unit in which the substrates are loaded in a batch manner; And process chambers disposed above each of the second load lock chambers and processing the substrates loaded on the substrate loading unit; The process chamber having a process tube having an inner tube accommodating the substrate loading unit and an outer tube surrounding the inner tube; A rotating unit for rotating the substrate loading unit; A heater assembly installed to surround the process tube; A side main nozzle unit vertically installed on the inner side of the inner tube and having a main nozzle for spraying a process gas in a first direction passing through the center of the substrate mounted on the substrate mounting unit; And a subnozzle vertically installed on the inner side of the inner tube and injecting the process gas in a second direction different from the first direction to adjust a film thickness of the edge of the substrates mounted on the substrate loading unit Facilities.

The second direction may also be perpendicular to the first direction and toward the center of the substrate loaded in the substrate loading unit.

Further, the apparatus may further include a gas supply unit for supplying one of the process gas of the deposition tendency and the process gas of the etching tendency to the main nozzle and the other to the sub nozzle. The gas supply unit may supply the process gas amount supplied to the sub nozzle within 60% of the process gas amount supplied to the main nozzle.

The sub-nozzle includes a first sub-nozzle and a second sub-nozzle arranged to face each other with respect to the substrate, and the first sub-nozzle and the second sub- As shown in FIG.

The sub-nozzle includes a first sub-nozzle and a second sub-nozzle arranged to face each other with respect to the substrate, and the first sub-nozzle and the second sub- The process gas can be injected toward the edge of the substrate.

In addition, the process tube is provided in a dome shape with its top closed, and has a first sub-cutout portion located on one side and a straight line with the ejection direction of the first sub-nozzle, And a second sub-cutout portion positioned on the second sub-cutout portion.

According to an aspect of the present invention, there is provided a method of manufacturing a substrate processing apparatus, comprising: controlling a pressure inside a process tube in which a substrate loading unit is loaded; Forming a thin film on a substrate by injecting a process gas into substrates mounted on the substrate loading unit through a main nozzle and a sub nozzle provided in the process tube; And purging the interior of the process tube; Wherein the forming of the thin film comprises forming a thin film on the entire substrate by the process gas provided from the main nozzle and controlling the thin film thickness of the substrate edge by the process gas provided from the sub nozzle do.

In addition, the process gas injected from the sub nozzle may be orthogonal to the gas injection direction of the main nozzle for controlling the thickness of the substrate edge.

In addition, for adjusting the thickness of the substrate edge, the gas injection direction of the sub nozzle may pass the edge of the substrate off the center of the substrate mounted on the substrate stacking unit.

In addition, the gas injection direction of the sub nozzle may be opposed to a cut portion formed in the process tube.

Also, the main nozzle may eject one of a process gas of a deposition tendency and a process gas of an etching tendency, and the sub nozzle may spray another one.

In addition, the amount of the process gas injected from the sub nozzle may be less than 60% of the amount of the process gas injected from the main nozzle to control the thickness of the substrate edge.

According to the embodiment of the present invention, a uniform film can be formed.

According to the embodiment of the present invention, the thickness of the thin film on the edge of the substrate can be adjusted.

1 is a plan view showing a cluster facility for a selective epitaxial growth process according to an embodiment of the present invention.
2 is a side view of a cluster facility for substrate processing in accordance with an embodiment of the present invention.
3 is a cross-sectional view illustrating a process chamber according to one embodiment of the present invention.
4 is a plan sectional view of a process tube for explaining a side nozzle portion and a sub nozzle.
5 is a perspective view showing an inner tube provided with a side nozzle portion and a sub nozzle.
6A is a simulation showing the laminar flow of the upper part of the substrate under the condition of no sub nozzle
6B is a simulation showing the laminar flow of the upper portion of the substrate under the condition that the sub nozzle is present.
7 is a flow chart for explaining a substrate processing method in the above-described process chamber.
8 to 10 are views showing modifications of the present invention.

Other advantages and features of the present invention and methods for accomplishing the same will be apparent from the following detailed description of embodiments thereof taken in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

Unless defined otherwise, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. Terms defined by generic dictionaries may be interpreted to have the same meaning as in the related art and / or in the text of this application, and may be conceptualized or overly formalized, even if not expressly defined herein I will not.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms' comprise 'and / or various forms of use of the verb include, for example,' including, '' including, '' including, '' including, Steps, operations, and / or elements do not preclude the presence or addition of one or more other compositions, components, components, steps, operations, and / or components. The term 'and / or' as used herein refers to each of the listed configurations or various combinations thereof.

In this embodiment, the substrate may be a semiconductor wafer. However, the substrate is not limited to this, and the substrate may be another kind of substrate such as a glass substrate.

1 and 2 are a plan view and a side view showing a cluster facility for substrate processing according to an embodiment of the present invention.

1 and 2, the cluster facility 1 for substrate processing includes a facility front end module 900, a first load lock chamber 200, a transfer chamber 300, and a process module 400 do.

An Equipment Front End Module (EFEM) 900 is disposed in front of the cluster facility 1. The apparatus front end module 900 is provided with load ports 910 through which the cassette C is loaded and unloaded and a substrate transfer robot 930 through which the substrate is taken out from the cassette C, C and the first load lock chambers 200 to transfer the substrate. Here, an ATM (Atmosphere) robot is used as the substrate transfer robot 930.

The index chamber 920 is positioned between the load ports 910 and the first load lock chamber 200. The index chamber 920 has a rectangular parallelepiped shape including a front panel 922, a rear panel 924 and both side panels 926 and a substrate transfer robot 930 for transferring the substrate is provided therein. Although not shown, the index chamber 920 may include a controlled airflow system, such as vents, laminar flow system, to prevent particulate contaminants from entering the interior space.

The index chamber 920 is opened and closed by a gate valve GV1 for passage of the wafer with the load lock chamber 200 to the rear panel 924 in contact with the load lock chamber 200. [

The load ports 910 are arranged in a line on the front panel 922 of the index chamber 920. The cassette C is loaded and unloaded to the load port 204. [ The cassette C may be a front open unified pod having a front opened body and a door opening and closing the front of the body.

On both side panels 926 of the index chamber 920, a dummy substrate storage section 940 is provided. The dummy substrate storage portion 940 provides dummy substrate storage containers 942 in which the dummy substrates DW are stacked. The dummy substrates DW stored in the dummy substrate storage container 942 of the dummy substrate storage section 940 are used when the processing process module 300 lacks the substrates.

Although not shown, the dummy substrate storage container 942 can be provided in a different chamber than the side of the index chamber. As an example, the dummy substrate storage container 942 may be installed in the transfer chamber 300.

The first load lock chamber 200 is connected to the facility front end module 900 via the gate valve GV1. The first load lock chamber 200 is disposed between the facility front end module 900 and the transfer chamber 300. Three first load lock chambers 200 are provided between the facility front end module 900 and the transfer chamber 300. The first load lock chamber 200 is capable of selectively switching the internal space to atmospheric pressure and vacuum pressure. The first load lock chamber 200 is provided with a loading container 210 on which a substrate is loaded.

The transfer chamber 300 is connected to the first load lock chambers 200 through the gate valve GV2. The transfer chamber 300 is disposed between the first load lock chamber 200 and the process processing module 400. The transfer chamber 300 has a box shape of a rectangular parallelepiped, and a substrate transfer robot 330 for transferring the substrate is provided in the transfer chamber 300. The substrate transfer robot 330 transfers substrates between the first load lock chamber 200 and the substrate loading units 420 provided in the second load lock chamber 410 of the process processing module 400. The substrate transfer robot 330 may include an end effector capable of transferring a single substrate or five substrates. Here, the substrate transfer robot 330 uses a vacuum robot capable of transferring a substrate in a vacuum environment.

A plurality of process modules 400 may be connected to the transfer chamber 300 through a gate valve GV3. For example, the transfer chamber 300 may be connected to three process modules 400, which are selective epitaxial growth devices, and the number thereof may be variously provided.

Referring to FIG. 2, the cluster facility 1 includes a vacuum exhaust unit 500 and an inert gas supply unit 600. The vacuum evacuation unit 500 is connected to each of the first load lock chamber 200, the transfer chamber 300, the second load lock chamber 410 and the process chamber 100, Gt; 510 < / RTI > The inert gas supply unit 600 supplies an inert gas to each chamber for forming a differential pressure between the first load lock chamber 200, the transfer chamber 300, the second load lock chamber 410 and the process chamber 100 And a gas supply line 610.

The index chamber 110 and the first load lock chamber 200, the first load lock chamber 200 and the transfer chamber 300, and the transfer chamber 300 and the second load lock chamber 410 are connected to the gate valve GV1, GV2, GV3) to independently control the respective chamber pressures.

3 is a cross-sectional view showing a process chamber 100 according to an embodiment of the present invention.

Referring to FIGS. 1-3, process processing module 400 includes a second load lock chamber 410 and a process chamber 100.

The second load lock chamber 410 is connected to the transfer chamber 300 via the gate valve GV3. The second load lock chamber 410 includes an elevating member 430 for loading / unloading the substrate stacking unit 130 in which the substrates are mounted in a batch manner into the inner space of the process tube 110 of the process chamber 100 / RTI > In one example, the substrate loading unit 130 may include a boat with slots to allow loading of 25, 50 sheets of substrates. The process chamber 100 is disposed above the second load lock chamber 410.

The process chamber 100 may include an apparatus for processing a substrate. In one example, the process chamber 100 includes a process tube 110, a heater assembly 120, a substrate loading unit 130, a side nozzle unit 140, a sub nozzle 160, a boat rotation unit 172, a control unit 170 And a supply unit 190. [0030]

The process tube 110 includes an inner tube 112 in which the substrate stacking unit 130 is accommodated and an outer tube 114 surrounding the inner tube 112. The process tube 110 is loaded with a substrate loading unit 130 on which a substrate is loaded to provide an internal space in which a selective epitaxial growth process is performed on the substrates. The process tube 110 may be made of a material that can withstand high temperatures, such as quartz. The inner tube 112 and the outer tube 114 are formed in the shape of a circular tube with the upper portion closed. In particular, the inner tube 112 has a main cutout 113 formed along one side thereof in the longitudinal direction (vertical direction). The main cutout 113 may be provided in a slot shape. The main cutout 113 may be formed in a straight line with the first main nozzle 142.

For example, the main cut-out portion 113 may be provided in an inverted triangular shape that becomes wider from the lower end to the upper end and a triangular shape that becomes narrower from the lower end to the upper end. In addition, the main cut-out portion 113 may be provided in the form of a separate hole facing the injection hole of the first main nozzle 142. In addition, the cutout 113 can be provided with the same width as the first figure on the right side.

Referring again to FIGS. 1 to 3, the process tube 110 includes an exhaust port 119 for forcedly sucking and exhausting the inside air to reduce the pressure inside the flange 118, A nozzle port 118 for mounting a side nozzle portion 140 for injecting a process gas into the process tube 110 is provided. Although not shown in FIG. 3, the process tube 110 may be provided with a nozzle port for mounting the sub-nozzle 160. The exhaust port 119 is provided for discharging the air in the process tube 110 to the outside in the process. A vacuum exhausting device (not shown) is connected to the exhaust port 119, and the process gas supplied to the process tube 110 through the exhaust port 119 is exhausted and internally decompressed. The heater assembly 120 is installed to surround the process tube 110.

The substrate loading unit 130 may have slots into which a plurality of (for example, 50) substrates are inserted. The substrate stacking unit 130 is mounted on the seal cap 180 and the seal cap 180 is loaded into the process tube 110 by an elevator member 430 which is an elevator device or unloaded out of the process tube 110 do. When the substrate loading unit 130 is loaded into the process tube 110, the seal cap 180 engages the flange 111 of the process tube 110. On the other hand, a sealing member such as an O-ring for sealing is provided at a portion where the flange 111 of the process tube 110 and the seal cap 180 are in contact with each other, 110 and the seal cap 180. As shown in FIG.

On the other hand, the boat rotation unit 172 provides a rotational force for rotating the substrate stacking unit 130. [ The boat rotating part 172 may be a motor. The boat rotation part 172 is installed on the seal cap 180. The boat rotation unit 172 may be provided with a sensor for sensing the rotation speed of the substrate loading unit 130. [ The rotation speed of the substrate loading unit 130 sensed by the sensor may be provided to the control unit 170.

The control unit 170 controls the operation of the boat rotation unit 172. The control unit 170 controls the rotation speed of the boat rotation unit 172 according to the time for supplying the gas through the nozzles of the side nozzle unit 140.

FIG. 4 is a plan sectional view of a process tube for describing the side nozzle portion and the sub nozzle, and FIG. 5 is a perspective view showing an inner tube having a side nozzle portion and a sub nozzle.

3 to 5, the side nozzle portion 140 is provided perpendicularly to the inside of the process tube 110. As shown in FIG. The side nozzle portion 140 may include a plurality of nozzles that supply gases to the substrate surface that contribute to thin film growth by the process tube 110. For example, the side nozzle portion 140 includes a first main nozzle 142, a second main nozzle 144, a pair of side curtain nozzles 152, a pre-deposition nozzle 154, And may include a nozzle 156.

In one example, the first main nozzle 142 is positioned in a straight line so as to face the main cutout 113 provided in the inner tube 112. The gas injection direction of the first main nozzle 142 ejects the process gas in a first direction x1 that passes through the center of the substrate stacked on the substrate stacking unit 130 to the main cutout 113. [

A pair of side curtain nozzles 152 are arranged on both sides of the first main nozzle 142. The side curtain nozzle 152 injects the inert gas so that the process gas injected from the first main nozzle 142 goes straight toward the cutout 113 of the inner tube 112. As an example, the inert gas may include N2 gas, Ar gas, and H2 gas.

The second main nozzle 144 is provided on one side of the side curtain nozzle 152. The second main nozzle 144 may be disposed at a certain angle with the exhaust port 113.

The pre-depallon nozzle 154 injects the deposition gas for the purpose of pre-coating the interior of the process tube 110 after in-situ cleaning and pre-processes the substrate environment of the process tube 110 Can be provided as a condition to make. Of course, the pre-coating may be performed using the second main nozzle 144. However, since the pre-deform nozzle 154 is separately installed and operated, the frequency of use of the second main nozzle 144 is reduced, 144 and the thin film formation inside the nozzle can be reduced to prolong the duration of the in-to-clean period.

The lower cleaning nozzle 156 is provided for cleaning the lower end of the inner tube 112 during the in-situ cleaning process. The lower cleaning nozzle 156 is shorter in length than other nozzles and the gas for cleaning (for example, ClF3, ClF3, or the like) is supplied around the boat support unit 138 between the substrate loading unit 130 and the seal cap 180, F2. In the in-situ cleaning process, the gas for cleaning is also sprayed from the second main nozzle 144, and the lower cleaning nozzle 156 is sprayed to the booth support portion (not shown), which is a weak range deviating from the spray range of the second main nozzle 144 138) for the purpose of cleaning. The lower cleaning nozzle 156 can shorten the in-situ cleaning time.

The sub-nozzle 160 is provided between the first main nozzle 142 and the main cut-out portion 113. The sub nozzle 160 is provided for adjusting the film thickness of the edge of the substrates loaded on the substrate stacking unit 130. For example, the installation position of the sub nozzle 160 may be positioned within a range of 80-100 ° from the main nozzle 142 with respect to the center of the substrate stacking unit 130 when viewed from the plane. The sub nozzle 160 also injects the process gas in a second direction X2 different from the first direction x1. Here, the second direction x2 in which the sub nozzle 160 ejects the gas may be a direction orthogonal to the first direction x1 and toward the center c of the substrate.

Although not shown, the first main nozzle 142, the second main nozzle 144, and the sub nozzle 160 include periodic nozzles for spraying gas in a plurality of sections with respect to the longitudinal direction of the substrate stacking unit 130 . The sub nozzle 160 may include first and second zone nozzles for injecting gas into two zones, and the first zone nozzle may include an upper portion of the substrate stacking unit 130 And the second section nozzle can inject gas into the lower section of the substrate stacking unit 130. [0050]

The side nozzle unit 140 and the sub nozzle 160 can receive process gases contributing to thin film growth to the surface of the substrate through the supply unit 190.

The supply unit 190 may selectively provide a process gas of a defoaming nature, a process gas of an etching characteristic, a cleaning gas, and an inert gas (purge gas) to the side nozzle unit 140 and the sub nozzle 160. For example, a gas such as DCS, SiH4, or Si2H6 may be included in the gas having a propensity to be defoamed. A gas such as Cl2 or HCL may be included in the gas having an etching characteristic. When the gas is intended for doping with impurities, The same doping gas can be used.

According to one example, the supply unit 190 can supply the process gas of the deposition tendency and the process gas of the etching tendency to the first main nozzle 142 and the sub nozzle 160, respectively. That is, the first main nozzle 142 and the sub nozzle 160 can receive process gases of different tendencies.

In addition, the supply unit 190 may provide different amounts of process gases to the first main nozzle 142 and the sub nozzles 160, respectively. For example, the supply unit 190 may supply the process gas amount injected from the sub nozzle 160 for adjusting the thickness of the substrate edge at a different rate than the process gas amount injected from the first main nozzle 142, Or less.

The supply unit 190 supplies a process gas obtained by mixing a process gas of a deposition tendency (hereinafter referred to as A gas) with a process gas of an etching tendency (hereinafter referred to as B gas) and an inert gas (hereinafter referred to as a C gas) 1 main nozzle 142 and the sub nozzle 160, respectively. For example, when a mixed process gas having a high A gas ratio is supplied to the first main nozzle 142, a mixed process gas having a high B gas ratio is supplied to the sub nozzle 160, Is supplied to the first main nozzle 142, a mixed process gas having a high AB gas ratio is supplied to the sub nozzle 160, so that the thickness of the substrate edge can be controlled.

As another example, the sub nozzle 160 may additionally inject doping gas for doping concentration adjustment for the purpose of doping the impurities. For example, the doping gas may include B2H6, PH3, and the like.

FIG. 6A is a simulation showing the laminar flow of the upper portion of the substrate in the absence of the sub-nozzle, and FIG. 6B is a simulation showing the laminar flow of the upper portion of the substrate in the presence of the sub-nozzle.

6A and 6B, the process gas is further injected from the sub nozzle 160 compared with the case where the process gas is injected only from the first main nozzle 142, so that a uniform gas distribution is formed on the substrate, Can be further improved.

For example, when the first main nozzle 142 injects a process gas of a deposition tendency, the process gas of the deposition tendency first reacts with the edge portion of the substrate and is exhausted to the main cutout portion 113 through the substrate center portion, The thickness of the edge portion becomes thick and the thickness of the center portion becomes thin. However, the uniformity of the entire substrate can be improved by suppressing the deposition rate of the thin film at the edge portion of the substrate by spraying the process gas of the etching tendency by the sub nozzle 160.

7 is a flow chart for explaining a substrate processing method in the above-described process chamber.

A method of growing a substrate thin film using the process chamber 100 will be briefly described as follows.

First, when a plurality of substrates are stacked on the substrate stacking unit 130, the substrate stacking unit 130 is carried into the process tube 110 by the lifting operation of the lifting device 430. At this time, the lower end of the process tube 110 is sealed by the seal cap 180. Next, a vacuum evacuating device (not shown) is feedback-controlled such that the inside of the process tube 110 is at a desired pressure (degree of vacuum). In addition, the interior of the process tube 110 is heated by the heater assembly 120 to a desired temperature suitable for selective epitaxial growth.

Subsequently, the substrate rotating unit 130 is rotated by the boat rotating unit 172 to rotate the substrates.

Each of the nozzles and the sub nozzle 160 of the side nozzle unit 140 provided in the process tube injects the process gas into the substrates loaded on the substrate loading unit through the supply unit to form a thin film on the substrate.

In the step of forming the thin film, the thin film is formed on the entire substrate by the process gas supplied from the first main nozzle 142, and the thin film thickness of the substrate edge is adjusted by the process gas provided from the sub nozzle 160.

When the thin film formation is completed, the inside of the process tube 110 is purged. In the purge step, the first main nozzle 142 and the sub nozzle 160 inject purge gas (N2 or H2).

8 is a view showing a modification of the present invention.

As shown in FIG. 8, the sub nozzles 160 may be arranged to face each other with respect to the center of the substrate loaded on the substrate stacking unit 130. Further, the sub nozzle 160 can jet the process gas toward the center of the substrate. At this time, the two sub-nozzles 160 may be positioned within the range of 80 to 100 degrees with respect to the first main nozzle 142.

9 is a view showing still another modification of the present invention.

9, the process tube 110 includes a first sub-cutout 113a and a second sub-cutout 113a formed side by side on both sides of a main cutout 113 positioned on a straight line with the first main nozzle 142, (113b).

FIG. 10 is a view showing still another modification of the present invention.

As shown in Fig. 10, the two sub nozzles 160 can be provided so that the gas ejecting direction X3 is directed toward the edge of the substrate off-center of the substrate loaded in the substrate loading unit 130. [ Under these conditions, the first sub-incision 113a and the second sub-incision 113b may be provided so as to be located on a straight line with the ejection direction X3 of the two sub-nozzles 160. [

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: process chamber 110: process tube
120: heater assembly 130: substrate loading unit
140: side nozzle part 172: boat rotating part
170: control unit 190:

Claims (28)

A furnace type substrate processing apparatus comprising:
Process tube;
A substrate loading unit positioned within the process tube;
A side main nozzle unit vertically installed inside the process tube and having a main nozzle for spraying a process gas in a first direction passing through the center of the substrate mounted on the substrate loading unit; And
And at least one subnozzle vertically installed inside the process tube and injecting the process gas in a second direction different from the first direction to control the film thickness of the edge of the substrates stacked on the substrate loading unit The substrate processing apparatus comprising: The method according to claim 1,
Wherein an angle between the second direction and the first direction is close to a vertical direction. The method according to claim 1,
And the second direction is directed to the center of the substrate loaded on the substrate loading unit. The method according to claim 1,
The installation position of the sub-
Is located within a range of 80 to 100 DEG from the main nozzle with respect to the center of the substrate loading unit when viewed from a plane. The method according to claim 1,
Further comprising: a gas supply unit for supplying a process gas to the main nozzle and the sub nozzle;
The gas supply part
Wherein the amount of the process gas supplied to the sub nozzle is supplied at a rate different from the amount of the process gas supplied to the main nozzle. 6. The method of claim 5,
The gas supply part
Supplying a process gas of a deposition tendency and a process gas of an etching tendency;
Wherein the main nozzle and the sub nozzle are supplied with process gases of different tendencies. The method according to claim 1,
Further comprising a boat rotation unit for rotating the substrate loading unit. The method according to claim 1,
The process tube
And a main cutout portion provided on one side of the main cutout and aligned with the main nozzle. The method according to claim 1,
Wherein the sub-nozzle is positioned between the main nozzle and the main cut-out portion. The method according to claim 1,
The sub-
A first sub-nozzle and a second sub-nozzle,
Wherein the first sub-nozzle and the second sub-nozzle are arranged to face each other with respect to the substrate. 11. The method of claim 10,
The first sub-nozzle and the second sub-
Wherein the processing gas is injected toward the center of the substrate loaded on the substrate loading unit. 11. The method of claim 10,
The first sub-nozzle and the second sub-
Wherein the process gas is injected toward the edge of the substrate which is off-center of the substrate mounted on the substrate stacking unit. 11. The method of claim 10,
The process tube
A main cutout portion provided on one side of the main nozzle and positioned on a straight line with the main nozzle; And
And a first sub-cutout portion and a second sub-cutout portion formed side by side on both sides of the main cutout portion. 14. The method of claim 13,
Wherein the first sub-cutout portion is positioned on a straight line with the ejection direction of the first sub-
And the second sub-cutout portion is positioned on a straight line with the jetting direction of the second sub-nozzle. The method according to claim 1,
The side nozzle portion
Side curtain nozzles arranged side by side with the main nozzle interposed therebetween for spraying an inert gas for improving the straightness of the process gas injected from the main nozzles; And
Further comprising a pre-deposition nozzle for pre-coating the interior of the inner tube. CLAIMS What is claimed is:
A facility front end module (EFEM) having load ports on which cassettes loaded with substrates are placed;
A first load lock chamber connected to the facility front end module through a gate valve and having an internal space capable of selective switching to atmospheric pressure and vacuum pressure;
A transfer chamber connected to the first load lock chamber through a gate valve and having a transfer device for substrate transfer;
Second load lock chambers connected to the transfer chamber via a gate valve, the second load lock chambers having a substrate loading unit in which the substrates are loaded in a batch manner; And
And process chambers disposed above each of the second load lock chambers and processing substrates loaded on the substrate loading unit;
The process chamber
A process tube having an inner tube accommodating the substrate loading unit and an outer tube surrounding the inner tube;
A rotating unit for rotating the substrate loading unit;
A heater assembly installed to surround the process tube;
A side main nozzle unit vertically installed on the inner side of the inner tube and having a main nozzle for spraying a process gas in a first direction passing through the center of the substrate mounted on the substrate mounting unit; And
And a sub nozzle provided perpendicularly to the inner side of the inner tube for spraying the process gas in a second direction different from the first direction to adjust the film thickness of the edge of the substrates mounted on the substrate stacking unit. . 17. The method of claim 16,
The second direction being perpendicular to the first direction and toward the center of the substrate loaded in the substrate loading unit. 17. The method of claim 16,
Further comprising a gas supply unit for supplying either one of the process gas of the deposition tendency and the process gas of the etching tendency to the main nozzle and the other to the sub nozzle;
The gas supply part
Wherein the supply amount of the process gas supplied to the sub nozzle is within 60% of the process gas amount supplied to the main nozzle. 17. The method of claim 16,
The sub-
A first sub nozzle and a second sub nozzle arranged to face each other with respect to the substrate,
The first sub-nozzle and the second sub-
Wherein the process gas is injected toward the center of the substrate stacked on the substrate stacking unit. 17. The method of claim 16,
The sub-
A first sub nozzle and a second sub nozzle arranged to face each other with respect to the substrate,
The first sub-nozzle and the second sub-
Wherein the process gas is injected toward the edge of the substrate off-center of the substrate loaded on the substrate stacking unit. 21. The method according to claim 19 or 20,
The process tube
A first sub-cutout portion provided on one side of the first sub-nozzle and a second sub-cutout portion located on a second side of the second sub-nozzle, the first sub- Further comprising a sub-cutout. A substrate processing method in a furnace type semiconductor facility,
Controlling the pressure inside the process tube in which the substrate loading unit is loaded;
Forming a thin film on a substrate by injecting a process gas into substrates mounted on the substrate loading unit through a main nozzle and a sub nozzle provided in the process tube; And
Purging the interior of the process tube;
The step of forming the thin film
Wherein a thin film is formed on the entire substrate by the process gas provided from the main nozzle and the thin film thickness of the substrate edge is controlled by the process gas provided from the sub nozzle. 23. The method of claim 22,
Wherein the process gas injected from the sub nozzle for controlling the thickness of the substrate edge is orthogonal to the gas injection direction of the main nozzle. 23. The method of claim 22,
Wherein the gas injection direction of the sub-nozzle passes through the edge of the substrate off-center of the substrate loaded on the substrate loading unit for adjusting the thickness of the substrate edge. 23. The method of claim 22,
Wherein a gas injection direction of the sub nozzle faces a cut formed in the process tube. 23. The method of claim 22,
Wherein the main nozzle ejects one of a process gas of a deposition tendency and a process gas of an etching tendency, and the sub nozzle ejects the other. 23. The method of claim 22,
Wherein the amount of the process gas injected from the sub nozzle for adjusting the thickness of the substrate edge is within 60% of the amount of the process gas injected from the main nozzle. A computer-readable recording medium,
28. A recording medium on which a program for executing a substrate processing method according to any one of claims 22 to 27 is recorded.
KR1020150076198A 2015-05-29 2015-05-29 Substrate treating apparatus of furnace type, cluster equipment for treating substrate, and substrate processing method KR101785330B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108695202A (en) * 2017-03-31 2018-10-23 东京毅力科创株式会社 Processing system
TWI673765B (en) * 2017-05-31 2019-10-01 日商Ｔｄｋ股份有限公司 Device front end module and method for introducing replacement gas to device front end module
WO2023167732A1 (en) * 2022-03-02 2023-09-07 Applied Materials, Inc. Enclosure system with charging assembly

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101431087B1 (en) * 2013-03-19 2014-08-21 국제엘렉트릭코리아 주식회사 apparatus for Selctive Epitaxial Growth and Cluster Apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108695202A (en) * 2017-03-31 2018-10-23 东京毅力科创株式会社 Processing system
TWI673765B (en) * 2017-05-31 2019-10-01 日商Ｔｄｋ股份有限公司 Device front end module and method for introducing replacement gas to device front end module
WO2023167732A1 (en) * 2022-03-02 2023-09-07 Applied Materials, Inc. Enclosure system with charging assembly
US11817724B2 (en) 2022-03-02 2023-11-14 Applied Materials, Inc. Enclosure system with charging assembly

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