KR20160139635A - Organic Light Emitting Diode Display Device and Method of Fabricating the Same - Google Patents

Abstract

The present invention relates to an organic light emitting diode display device and a manufacturing method thereof. The manufacturing method forms a bank layer including a first bank and a second bank to form a light emitting layer in a pixel area in the bank layer by means of a solution process, wherein a bank hole is formed in the second bank between the adjacent pixel areas to have solution layers of the adjacent pixel areas mixed during the solution process, thereby minimizing a nozzle deviation between the pixel areas and forming a thin film having a uniform thickness.

Description

Technical Field [0001] The present invention relates to an organic light emitting diode (OLED) display device and a fabrication method thereof,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED) display device, and more particularly, to a large-area, high-resolution organic light emitting diode display device capable of providing uniform luminance and a method of manufacturing the same.

2. Description of the Related Art Flat panel displays having excellent characteristics such as thinning, lightening, and low power consumption have been widely developed and applied to various fields.

Among the flat panel display devices, an organic light emitting diode (OLED) display device, also referred to as an organic electroluminescent display device or organic electroluminescent display device, An electron injecting charge is injected into the light emitting layer formed between the anode which is the injection electrode, and the electron and the hole are paired, and then the light is emitted while disappearing. Such an organic light emitting diode display device can be formed not only on a flexible substrate such as a plastic but also because it has a large contrast ratio and response time of several microseconds since it is a self- It is easy to manufacture and design a driving circuit because it is easy to operate, is not limited in viewing angle, is stable at a low temperature, and can be driven at a relatively low voltage of 5 V to 15 V DC.

The organic light emitting diode display device can be classified into a passive matrix type and an active matrix type according to a driving method. An active type organic light emitting diode display device capable of low power consumption, fixed size, and large size is widely used in various display devices. .

FIG. 1 is a diagram showing a structure of a general organic light emitting diode display device in a band diagram.

1, an organic light emitting diode display device includes a light emitting material layer 4 between an anode 1, which is an anode, and a cathode 7, which is an anode. . Emitting material layer 4 and between the anode 1 and the luminescent material layer 4 and between the cathode 7 and the luminescent material layer 4 to inject holes from the anode 1 and electrons from the cathode 7 into the luminescent material layer 4. [ A hole transporting layer 3 and an electron transporting layer 5 are disposed between the electron transporting layer 5 and the electron transporting layer 5, respectively. A hole injecting layer 2 is formed between the anode 1 and the hole transporting layer 3 and electrons are injected between the electron transporting layer 5 and the cathode 7 in order to more efficiently inject holes and electrons. And an electron injecting layer (6).

1, the lower line is the highest energy level of the valence band, the highest occupied molecular orbital (HOMO), the upper line is the lowest energy level of the conduction band, LUMO (lowest unoccupied molecular orbital). The energy difference between the HOMO level and the LUMO level is the band gap.

(+) Injected from the anode 1 into the light emitting material layer 4 through the hole injecting layer 2 and the hole transporting layer 3 and positive holes injected from the cathode 7 into the light emitting material layer 4 in the organic light emitting diode display device having such a structure Electrons injected into the light emitting material layer 4 through the electron injecting layer 6 and the electron transporting layer 5 are combined with each other to form an exciton 8. From this exciton 8, And emits light of a color corresponding to the band gap of the layer (4).

The light emitting material layer 4 of the organic light emitting diode display device is formed by thermal evaporation by selectively vacuum depositing an organic light emitting material using a fine metal mask. , Deflection, shadow effect, etc., which are difficult to apply to large-area and high-resolution display devices.

To solve this problem, a method of forming a light emitting material layer by a solution process has been proposed. In the solution process, a bank layer surrounding the pixel region is formed, a nozzle of the injector is scanned in a predetermined direction to drop a light emitting material in a pixel region in the bank layer, and then the light emitting material layer is cured . At this time, the hole injecting layer and the hole transporting layer may also be formed by a solution process.

However, when the hole injection layer, the hole transport layer, the light emitting material layer, and the like are formed by the solution process, different nozzles are used for each pixel region for dropping the solution, A variation in the thickness of the thin film occurs. As a result, mura is generated in the scanning direction of the nozzle, and the image quality of the display device is deteriorated.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide an organic light emitting diode display device having excellent image quality, large area, and high resolution and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a thin film transistor comprising: a substrate; a thin film transistor on the substrate; a first electrode connected to a drain electrode of the thin film transistor; A bank layer having a corresponding transmission hole and including a first bank and a second bank above the first bank; a light emitting layer positioned above the first electrode in the transmission hole; and a second electrode disposed above the light emitting layer, Wherein the second bank has bank holes between adjacent sub-pixels, and a remaining film including the same material as the light emitting layer is disposed in the bank holes.

And the width of the second bank between the adjacent through hole and the bank hole has a value between 5 micrometers and 10 micrometers.

The light emitting layer includes a hole assist layer, a light emitting material layer, and an electron assist layer, and the remaining layer includes the same material as the hole assist layer.

The remaining film further includes the same material as the light emitting material layer.

The adjacent sub-pixels emit light of the same color.

The bank hole includes a first bank hole and a second bank hole, the first bank hole is located between adjacent sub-pixels of one pixel, and the second bank hole is located between adjacent pixels.

The method may further include forming a thin film transistor on the substrate, forming a protective film on the thin film transistor, forming a first electrode connected to the drain electrode of the thin film transistor on the protective film, Forming a first bank covering an edge of the first electrode, forming a first hole in the first bank and a second hole in the first hole, Forming a light emitting layer on the first electrode in the transmission hole; and forming a second electrode on the light emitting layer, wherein the step of forming the light emitting layer comprises the steps of: And forming a retentive film in the bank hole. The present invention also provides a method of manufacturing an organic light emitting diode display device.

Forming the light emitting layer includes forming a first solution layer in a transmission hole of the adjacent sub pixel, forming a second solution layer in the bank hole in contact with the first solution layer, Forming a single solution layer in the adjacent sub-pixels by causing the solution layer and the second solution layer to be agglomerated and mixed with each other; and drying the single solution layer.

The forming of the light emitting layer may include forming a hole assist layer or forming a hole assist layer and a light emitting material layer.

In the present invention, a light emitting layer of an organic light emitting diode display device is formed by a solution process, so that the present invention can be applied to a display device having a large area and a high resolution.

At this time, the bank layer may be formed of a double structure of the first bank and the second bank, so that the thickness of the light emitting layer in the pixel region can be made uniform.

Further, by forming bank holes in the second bank to mix the solution layers in the adjacent pixel regions, it is possible to minimize the deviation of the nozzles between the pixel regions and to obtain a thin film having a uniform thickness. Therefore, it is possible to prevent stains and improve image quality.

FIG. 1 is a diagram showing a structure of a general organic light emitting diode display device in a band diagram.
2 is a circuit diagram of one pixel region of an organic light emitting diode display according to an embodiment of the present invention.
3 is a cross-sectional view schematically showing an organic light emitting diode display device according to an embodiment of the present invention.
4A to 4I are cross-sectional views illustrating a display device in each step of a manufacturing process of an organic light emitting diode display device according to an embodiment of the present invention.
5 is a plan view schematically showing an organic light emitting diode display device according to a first embodiment of the present invention.
6 is a plan view schematically showing an organic light emitting diode display device according to a second embodiment of the present invention.
7 is a plan view schematically showing an organic light emitting diode display device according to a third embodiment of the present invention.
8 is a plan view schematically showing an organic light emitting diode display device according to a fourth embodiment of the present invention.
9 is a plan view schematically showing an organic light emitting diode display device according to a fifth embodiment of the present invention.
10 is a plan view schematically showing an organic light emitting diode display device according to a sixth embodiment of the present invention.

Hereinafter, an organic light emitting diode display and a method of manufacturing the same according to an embodiment of the present invention will be described in detail with reference to the drawings.

2 is a circuit diagram of one pixel region of an organic light emitting diode display according to an embodiment of the present invention.

2, the organic light emitting diode display device according to the embodiment of the present invention includes a gate line GL and a data line DL that define a pixel region P and intersect with each other, A switching thin film transistor Ts, a driving thin film transistor Td, a storage capacitor Cst, and an organic light emitting diode De are formed in the region P.

More specifically, the gate electrode of the switching thin film transistor Ts is connected to the gate wiring GL and the source electrode thereof is connected to the data wiring DL. The gate electrode of the driving thin film transistor Td is connected to the drain electrode of the switching thin film transistor Ts, and the source electrode thereof is connected to the high potential voltage VDD. The anode of the organic light emitting diode De is connected to the drain electrode of the driving thin film transistor Td and the cathode is connected to the low potential voltage VSS. The storage capacitor Cst is connected to the gate electrode and the drain electrode of the driving thin film transistor Td.

The switching TFTs turn on according to the gate signal applied through the gate line GL and the data line DL is turned on at this time. Is applied to the gate electrode of the driving thin film transistor Td and the one electrode of the storage capacitor Cst through the switching thin film transistor Ts.

The driving thin film transistor Td is turned on according to the data signal to control the current flowing through the organic light emitting diode De to display an image. The organic light emitting diode De emits light by a current of a high potential voltage (VDD) transmitted through the driving thin film transistor Td.

That is, the amount of current flowing through the organic light emitting diode De is proportional to the size of the data signal, and the intensity of light emitted by the organic light emitting diode De is proportional to the amount of current flowing through the organic light emitting diode De, The region P displays different gradations according to the size of the data signal, and as a result, the organic light emitting diode display displays an image.

The storage capacitor Cst maintains the charge corresponding to the data signal for one frame so that the amount of current flowing through the organic light emitting diode De is kept constant and the gradation displayed by the organic light emitting diode De is maintained constant .

3 is a cross-sectional view schematically showing an organic light emitting diode display device according to an embodiment of the present invention, and shows a structure corresponding to a plurality of pixel regions.

As shown in FIG. 3, a semiconductor layer 122 patterned corresponding to each pixel region is formed on an insulating substrate 110. The substrate 110 may be a glass substrate or a plastic substrate. In this case, a light shielding pattern (not shown) and a buffer layer (not shown) may be formed under the semiconductor layer 122, and the light shielding pattern may be formed on the semiconductor layer 122 And prevents the semiconductor layer 122 from being deteriorated by light. Alternatively, the semiconductor layer 122 may be made of polycrystalline silicon. In this case, impurities may be doped on both edges of the semiconductor layer 122.

A gate insulating layer 130 made of an insulating material is formed on the entire surface of the substrate 110 on the semiconductor layer 122. The gate insulating film 130 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ). When the semiconductor layer 122 is made of polycrystalline silicon, the gate insulating layer 130 may be formed of silicon oxide (SiO ₂ ) or silicon nitride (SiNx).

A gate electrode 132 made of a conductive material such as metal is formed on the gate insulating layer 130 in correspondence with the center of the semiconductor layer 122 in each pixel region. A gate line (not shown) and a first capacitor electrode (not shown) may be formed on the gate insulating layer 130. The gate wiring extends along the first direction, and the first capacitor electrode is connected to the gate electrode 132. [

In the embodiment of the present invention, the gate insulating layer 130 is formed on the entire surface of the substrate 110, but the gate insulating layer 130 may be patterned to have the same shape as the gate electrode 132.

An interlayer insulating layer 140 made of an insulating material is formed on the entire surface of the substrate 110 on the gate electrode 132. The interlayer insulating film 140 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x), or an organic insulating material such as photo acryl or benzocyclobutene .

The interlayer insulating film 140 has first and second contact holes 140a and 140b that expose both upper surfaces of the semiconductor layer 122. [ The first and second contact holes 140a and 140b are spaced apart from the gate electrode 132 on both sides of the gate electrode 132. Here, the first and second contact holes 140a and 140b are also formed in the gate insulating film 130. Alternatively, when the gate insulating film 130 is patterned to have the same shape as the gate electrode 132, the first and second contact holes 140a and 140b are formed only in the interlayer insulating film 140. [

Source and drain electrodes 142 and 144 are formed of a conductive material such as metal on the interlayer insulating layer 140 corresponding to each pixel region. A data line (not shown), a power supply line (not shown), and a second capacitor electrode (not shown) may be formed on the interlayer insulating layer 140 in the second direction.

The source and drain electrodes 142 and 144 are spaced around the gate electrode 132 and contact the two sides of the semiconductor layer 122 through the first and second contact holes 140a and 140b, respectively. Although not shown, the data wiring extends along the second direction and crosses the gate wiring to define each pixel region, and the power wiring for supplying the high potential voltage is located apart from the data wiring. The second capacitor electrode is connected to the drain electrode 144, and overlaps the first capacitor electrode to form a storage capacitor with the dielectric interlayer 140 between the two.

On the other hand, the semiconductor layer 122, the gate electrode 132, and the source and drain electrodes 142 and 144 constitute a thin film transistor. Here, the thin film transistor has a coplanar structure in which the gate electrode 132 and the source and drain electrodes 142 and 144 are located on one side of the semiconductor layer 122, that is, above the semiconductor layer 122.

Alternatively, the thin film transistor may have an inverted staggered structure in which a gate electrode is positioned below the semiconductor layer and source and drain electrodes are located above the semiconductor layer. In this case, the semiconductor layer may be made of amorphous silicon.

Here, the thin film transistor corresponds to a driving thin film transistor of an organic light emitting diode display, and a switching thin film transistor (not shown) having the same structure as the driving thin film transistor is further formed on the substrate 110 corresponding to each pixel region. The gate electrode 132 of the driving thin film transistor is connected to the drain electrode (not shown) of the switching thin film transistor and the source electrode 142 of the driving thin film transistor is connected to the power supply wiring (not shown). In addition, a gate electrode (not shown) and a source electrode (not shown) of the switching thin film transistor are connected to the gate wiring and the data wiring, respectively.

A first passivation layer 152 and a second passivation layer 154 are sequentially formed on the entire surface of the substrate 110 as insulating materials on the source and drain electrodes 142 and 144. The first protective film 152 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x), and the second protective film 154 may be formed of an organic insulating material such as benzocyclobutene or photoacryl And the upper surface of the second protective film 154 may be flat.

The first passivation layer 152 and the second passivation layer 154 have drain contact holes 156 exposing the drain electrodes 144. Here, the drain contact hole 156 is formed directly on the second contact hole 140b, but may be formed apart from the second contact hole 140b.

One of the first protective film 152 and the second protective film 154 may be omitted. For example, the first protective film 152 made of an inorganic insulating material may be omitted.

A first electrode 162 is formed on the second protective film 154 with a conductive material having a relatively high work function. The first electrode 162 is formed for each pixel region and contacts the drain electrode 144 through the drain contact hole 156. For example, the first electrode 162 may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

A bank layer 170 is formed of an insulating material on the first electrode 162. The bank layer 170 is located between adjacent pixel regions and has a through hole 170a for exposing the first electrode 162 and covers the edge of the first electrode 162. [

The bank layer 170 includes a first bank 172 and a second bank 174 above the first bank 172. The first bank 172 has a first width w1 and the second bank 174 has a second width w2 and the first width w1 of the first bank 172 is greater than the second width w1 of the second bank 172. [ 174, respectively. Therefore, the width of the transmission hole 170a corresponding to the first bank 172 is narrower than the width of the transmission hole 170b corresponding to the second bank 174.

The first bank 172 is made of a material having a relatively high surface energy to lower the contact angle with the later-formed light-emitting layer material. The second bank 174 is made of a material having a relatively low surface energy, By increasing the contact angle, it is possible to prevent the light emitting layer material from overflowing into adjacent pixel regions. For example, the first bank 172 may be formed of an inorganic insulating material or an organic insulating material having a hydrophilic property, and the second bank 174 may be formed of an organic insulating material having a hydrophobic property.

On the other hand, the second bank 174 has a bank hole 174a, and the second bank 174 corresponding to the bank hole 174a is completely removed and is transferred to the upper surface of the first bank 172 through the bank hole 174a Lt; / RTI > Alternatively, the second bank 174 corresponding to the bank hole 174a may be partially removed, so that the upper surface of the first bank 172 may not be exposed through the bank hole 174a. In this case, 174a to expose the surface of the second bank 174.

Here, the bank hole 174a is located between adjacent pixel regions, and may be selectively formed. That is, the bank holes 174a may be formed between all the pixel regions, or the bank holes 174a may be formed only between some of the pixel regions.

At this time, the bank hole 174a is formed adjacent to the transmission hole 170a, and the width of the second bank 174 between the adjacent bank hole 174a and the transmission hole 170a is between 5 micrometers and 10 micrometers Value.

The bank hole 174a may have a rectangular planar shape. The planar shape of the bank hole 174a is not limited to this, and may be a polygon including a triangle or a rectangle, or may be a circle or an ellipse. In addition, the rectangle may be square, rectangular, or rhombic, and may include curved edges.

A light emitting layer 180 is formed on the first electrode 162 exposed through the transmission hole 170a of the bank layer 170. [ The light emitting layer 180 includes a hole auxiliary layer 182 and a light-emitting material layer 184 sequentially stacked from the top of the first electrode 162, and an electron auxiliary layer layer 186. The hole assistant layer 182 may include at least one of a hole injecting layer and a hole transporting layer and the electron assistant layer 186 may include at least one of an electron transporting layer and an electron injecting layer, and an electron injecting layer.

Here, the hole-assist layer 182 and the light-emitting material layer 184 are formed only in the transmission hole 170a, and the electron-assist layer 186 is formed substantially on the entire surface of the substrate 110. [ The hole-assist layer 182 and the light-emitting material layer 184 may be formed through a solution process, and the electron-assist layer 186 may be formed through a vacuum deposition process. As the solution process, a printing method or a coating method using an injection device including a plurality of nozzles may be used, but the present invention is not limited thereto. As an example, an inkjet printing method may be used in a solution process.

On the other hand, a residual film 182a is formed in the bank hole 174a. The residual film 182a may be made of the same material as the hole auxiliary layer 182. [ When the bank hole 174a exposes the upper surface of the first bank 172, the residual film 182a contacts the first bank 172. [

For example, the hole assist layer 182 may be a hole injection layer, and the hole assist layer 182 may be a hole transport layer between the light emitting material layer 184 and the hole assist layer 182. In this case, the residual film 182a is formed only of the same material as the hole injection layer.

The light emitting material layer 184 of each pixel region may be one of red, green, and blue light emitting material layers, and one color corresponds to one pixel region.

A second electrode 192 is formed on the entire surface of the substrate 110 with a conductive material having a relatively low work function on the light emitting layer 180. Here, the second electrode 192 may be formed of aluminum, magnesium, silver, or an alloy thereof.

The first electrode 162 and the emission layer 180 and the second electrode 192 constitute an organic light emitting diode and the first electrode 162 serves as an anode and the second electrode 192 serves as a cathode cathode.

Here, the organic light emitting diode display according to the embodiment of the present invention may be a top emission type in which light emitted from the light emitting material layer 184 is output to the outside through the second electrode 192. At this time, the first electrode 162 further includes a reflective layer (not shown) made of an opaque conductive material. For example, the reflective layer may be formed of an aluminum-palladium-copper (APC) alloy, and the first electrode 162 may have a triple-layer structure of ITO / APC / ITO. Also, the second electrode 192 may have a relatively thin thickness to transmit light, and the second electrode 192 may have a light transmittance of about 45-50%.

Alternatively, the organic light emitting diode display according to the exemplary embodiment of the present invention may be a bottom emission type in which light emitted from the light emitting material layer 184 is output to the outside through the first electrode 162 .

In the organic light emitting diode display device according to the embodiment of the present invention, the bank layer 170 is formed in a double structure of the first bank 172 and the second bank 174, and the thickness of the light emitting layer 180 Can be mitigated.

At this time, the bank holes 174a are selectively formed in the second bank 174 between the adjacent pixel regions so that the solution layer in the adjacent pixel region is mixed, thereby minimizing the nozzle deviation between the pixel regions and preventing the deviation in the thickness of the thin film have. Therefore, it is possible to prevent stains and improve image quality.

Hereinafter, a method of manufacturing an organic light emitting diode display according to an embodiment of the present invention will be described with reference to the drawings.

4A to 4I are cross-sectional views illustrating a display device in each step of a manufacturing process of an organic light emitting diode display device according to an embodiment of the present invention.

4A, a semiconductor material is deposited on the insulating substrate 110 to form a semiconductor material layer (not shown), and then a semiconductor material layer is selectively removed through a photolithography process using a mask, The semiconductor layer 122 is formed.

Here, the insulating substrate 110 may be a glass substrate or a plastic substrate. In addition, the semiconductor layer 122 may be made of an oxide semiconductor material, and the oxide semiconductor material may be indium gallium zinc oxide (IGZO) or indium tin zinc oxide (ITZO) ), Indium zinc oxide (IZO), zinc oxide (ZnO), indium gallium oxide (IGO), or indium aluminum zinc oxide : IAZO). At this time, a light shielding pattern (not shown) and a buffer layer (not shown) may be further formed under the semiconductor layer 122.

Alternatively, the semiconductor layer 122 may be made of polycrystalline silicon.

Next, a gate insulating layer 130 is formed on the entire surface of the substrate 110 by depositing an insulating material on the semiconductor layer 122 by chemical vapor deposition or the like. The gate insulating film 130 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x). When the semiconductor layer 122 is formed of an oxide semiconductor material, the gate insulating layer 130 is preferably formed of silicon oxide (SiO ₂ ).

Next, a conductive material such as a metal is deposited on the gate insulating layer 130 by sputtering or the like to form a first conductive material layer (not shown), and then, through a photolithography process using a mask, So that the gate electrode 132 is formed. The gate electrode 132 has a width narrower than that of the semiconductor layer 122 and is positioned corresponding to the center of the semiconductor layer 122.

The gate electrode 132 may be formed of at least one of aluminum (A), copper (Cu), molybdenum (Mo), chromium (Cr), nickel (Ni), tungsten (W)

On the other hand, a first capacitor electrode (not shown) and a gate wiring (not shown) are formed together with the gate electrode 132. Although not shown, the first capacitor electrode is connected to the gate electrode 132, and the gate wiring extends along the first direction.

An interlayer insulating layer 140 is formed on the entire surface of the substrate 110 by depositing or coating an insulating material on the gate electrode 132. The interlayer insulating layer 140 and the gate insulating layer 130 Are selectively removed to form first and second contact holes 140a and 140b that expose both upper surfaces of the semiconductor layer 122. [ The first and second contact holes 140a and 140b are spaced apart from the gate electrode 132 on both sides of the gate electrode 132.

The interlayer insulating film 140 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x), or may be formed of an organic insulating material such as benzocyclobutene or photo acryl .

Next, a conductive material such as metal is deposited on the interlayer insulating layer 140 by sputtering or the like to form a second conductive material layer (not shown), and then, through a photolithography process using a mask, The source and drain electrodes 142 and 144 are formed. The source and drain electrodes 142 and 144 are spaced apart from each other around the gate electrode 132 and are in contact with both sides of the semiconductor layer 122 through the first and second contact holes 140a and 140b.

The source and drain electrodes 142 and 144 are formed of at least one of aluminum (A), copper (Cu), molybdenum (Mo), chromium (Cr), nickel (Ni), tungsten .

On the other hand, a data line (not shown), a second capacitor electrode (not shown) and a power line (not shown) are formed together with the source and drain electrodes 142 and 144. Although not shown, the data line extends along the second direction, and intersects the gate line to define the pixel region. The second capacitor electrode is connected to the drain electrode 144, and the power supply wiring is located apart from the data wiring.

Next, a first protective film 152 and a second protective film 154 are sequentially formed on the entire surface of the substrate 110 by depositing or applying an insulating material on the source and drain electrodes 142 and 144, The first passivation layer 152 and the second passivation layer 154 are selectively removed through the etching process to form a drain contact hole 156 exposing the drain electrode 144. As shown, the drain contact hole 156 may be formed directly on the second contact hole 140b. Alternatively, the drain contact hole 156 may be formed apart from the second contact hole 140b.

The first protective film 152 is formed of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x), and the second protective film 154 is formed of a photo acryl or benzocyclobutene or an organic insulating material such as benzocyclobutene. One of the first protective film 152 and the second protective film 154 may be omitted.

Next, as shown in FIG. 4B, a first electrode material layer (not shown) is formed by depositing a conductive material having a relatively high work function on the second protective film 154 by sputtering or the like, The first electrode material layer is selectively removed through the photolithography process to form the first electrode 162. The first electrode 162 is located in each pixel region and contacts the drain electrode 144 through the drain contact hole 156.

The first electrode 162 may include a transparent conductive layer made of indium tin oxide (ITO) or indium zinc oxide (IZO). In addition, the first electrode 162 may further include a reflective layer, and the reflective layer may be formed of an aluminum-palladium-copper (APC) alloy. For example, the first electrode 162 may have a triple-layer structure of ITO / APC / ITO.

Next, as shown in FIG. 4C, a first bank material layer (not shown) is formed on the entire surface of the substrate 110 by depositing or applying a first bank material on the first electrode 162, The first bank material layer is selectively removed through the photolithography process to form the first bank 172 having the first width w1 between adjacent pixel regions. The first bank 172 covers the edge of the first electrode 162 and exposes the upper surface of the first electrode 162 corresponding to the pixel region. The first bank material may be an inorganic insulating material or an organic insulating material having a hydrophilic property.

Next, as shown in FIG. 4D, a second bank material layer (not shown) is formed on the entire surface of the substrate 110 by depositing or applying a second bank material on the first bank 172, The second bank material layer is selectively removed through the photolithography process to form a second bank 174 having a second width w2 over the first bank 172. [ The second width w2 of the second bank 174 is narrower than the first width w1 of the first bank 172. [

At this time, a bank hole 174a is selectively formed in the second bank 174. The upper surface of the first bank 172 can be exposed through the bank hole 174a. Alternatively, the surface of the second bank 174 may be exposed through the bank hole 174a.

Here, the second bank material may be an organic insulating material having a hydrophobic property.

The first bank 172 and the second bank 174 constitute a bank layer 170. The bank layer 170 has a transmission hole 170a corresponding to the pixel region and exposing the upper surface of the first electrode 162 I have.

The bank holes 174a of the second bank 174 are positioned adjacent to the transmission holes 170a so that the solution layers formed in the bank holes 174a and the transmission holes 170a may be mixed with each other The width of the second bank 174 between the adjacent bank holes 174a and the transmission hole 170a preferably has a value between 5 micrometers and 10 micrometers.

Next, as shown in FIG. 4E, a hole-injecting material (not shown) including a plurality of nozzles is used to drop the hole-assist material, so that the hole- 1 solution layer 182b. On the other hand, a hole-assist material is selectively dropped into the bank holes 174a between adjacent pixel regions to form a second solution layer 182c.

At this time, the second solution layer 128c in the bank hole 174a between the adjacent pixel regions is brought into contact with the first solution layer 182b of each pixel region by adjusting the drop amount.

Then, as shown in FIG. 4F, the first solution layer (182b in FIG. 4E) in the adjacent pixel region and the second solution layer 128c therebetween are coalesced and mixed together, and a single solution layer A hole-assistant material layer 182d is formed.

At this time, the hole-assistant material layer 182d has a uniform thickness corresponding to each pixel region due to the nozzle mixing effect because the first solution layer (182b in FIG. 4E) dripped by different nozzles is formed by being agglomerated and mixed .

Next, as shown in FIG. 4G, the layer of the hole-assist material (128d in FIG. 4F) is dried to form the hole-assist layer 182 on the first electrode 162. At this time, a residual film 182a is selectively formed in the bank hole 174a. The residual film 182a is made of the same material as the hole auxiliary layer 182. [

Here, the hole-assist layer 182 may be a hole injection layer or a hole injection layer and a hole transport layer. Therefore, the remainder film 182a may be formed of the same material as the hole injection layer, or may be made of the same material as the hole injection layer and the hole transport layer.

Next, as shown in FIG. 4H, a light emitting material is applied onto the hole assist layer 182 in the transmission hole 170a and dried to form a light emitting material layer 184 by a solution process.

Here, the light emitting material layer 184 of adjacent pixel regions may emit light of different colors. At this time, a light emitting material solution layer (not shown) may be formed by dropping the light emitting material only in the transmission hole 170a using an injection device (not shown) including a plurality of nozzles, and then dried.

Alternatively, the light emitting material layer 184 in the adjacent pixel region may emit light of the same color. In this case, the light emitting material layer 184 may be formed through a process similar to the process of forming the hole assist layer 182 of FIGS. 4E to 4G, and may have a uniform thickness corresponding to each pixel region by the nozzle mixing effect .

That is, a light emitting material is dropped onto the hole-assist layer 182 in each of the transmission holes 170a of the adjacent pixel region to form a third solution layer (not shown) A light emitting material is selectively dropped to form a fourth solution layer (not shown). At this time, the fourth solution layer in the bank hole 174a is in contact with the third solution layer in each pixel region, so that the third solution layer and the fourth solution layer are cohered and mixed with each other. In the adjacent pixel region, A solution layer (not shown) is formed. Then, the light emitting material solution layer is dried to form a light emitting material layer 184 in the transmission hole 170a. At this time, a residual film (not shown) made of a light emitting material may be further formed on the residual film 182a made of the hole assist material in the bank hole 174a.

Here, the remaining film made of the light emitting material may be formed in another bank hole 174a from the remainder film 182a made of the hole-assistant material.

Next, as shown in FIG. 4I, an electron-assistant layer 186 is formed on the entire surface of the substrate 110 by vacuum depositing an electron-assist material on the bank layer 170 and the light-emitting material layer 184. The hole assist layer 182 and the light emitting material layer 184 and the electron assist layer 186 constitute the light emitting layer 180. The electron assist layer 186 may include at least one of an electron transport layer and an electron injection layer. The electron assist layer 186 can contact the residual film 182a in the bank hole 174a.

A second electrode 192 is formed on the entire surface of the substrate 110 by depositing a conductive material having a relatively low work function on the electron assist layer 186 by sputtering or the like. The second electrode 192 may be formed of a metal material such as aluminum, magnesium, and silver. The second electrode 192 may have a relatively thin thickness so that light is transmitted.

As described above, in the embodiment of the present invention, a display device having a large area and a high resolution can be realized by forming the hole assist layer and the light emitting material layer by a solution process.

In addition, since the bank holes 174a are formed in the second bank 174 to allow the solution layers in the bank holes 174a to aggregate the solution layers in the adjacent pixel regions, the nozzle loading amount variation can be reduced And a film having a uniform thickness can be formed.

In the exemplary embodiment of the present invention, the solution layers of adjacent two pixel regions are aggregated to each other. However, the present invention is not limited thereto, and the solution layers of a larger number of pixel regions may be aggregated together to obtain a nozzle mixing effect for more pixel regions It is possible.

The structure and position of the bank holes according to the embodiment of the present invention are variously applicable and will be described with reference to FIGS. 5 to 10. FIG.

5 is a plan view schematically showing an organic light emitting diode display device according to a first embodiment of the present invention.

5, the organic light emitting diode display according to the first embodiment of the present invention includes a plurality of pixels PX, each pixel PX includes a plurality of sub-pixels SP1, SP2, SP3, SP4), and each of the sub-pixels SP1, SP2, SP3, and SP4 corresponds to one pixel region. For example, each pixel PX may include first through fourth sub-pixels SP1, SP2, SP3, and SP4 sequentially disposed along a first direction, and the first sub-pixel SP1 may include red light The second and fourth sub-pixels SP2 and SP4 emit blue light, and the third sub-pixel SP3 emits green light. The arrangement and the number of the sub-pixels SP1, SP2, SP3 and SP4 are not limited thereto, and each pixel PX includes at least one red, green and blue sub-pixel. In addition, each pixel PX may further include white subpixels in addition to red, green, and blue subpixels.

In the organic light emitting diode display according to the first embodiment of the present invention, a bank layer 170 is formed between adjacent pixel regions. The bank layer 170 includes a first bank 172 and a second bank 174 and is formed in correspondence to each pixel region, that is, first through fourth sub-pixels SP1, SP2, SP3, and SP4, (170a). The second bank 174 is located above the first bank 172 and the width of the second bank 174 is narrower than the width of the first bank 172.

On the other hand, the second bank 174 has bank holes 174a between adjacent pixel regions. At this time, the bank hole 174a is located between adjacent sub-pixels SP1, SP2, SP3, SP4 along the first direction of each pixel PX. That is, the bank hole 174a is formed between the first and second sub-pixels SP1 and SP2 and between the second and third sub-pixels SP2 and SP3 and between the third and fourth sub-pixels SP3 and SP4 And no bank holes are formed between adjacent pixels PX. This bank hole 174a is located at one end of each of the sub-pixels SP1, SP2, SP3 and SP4, more specifically in correspondence with the lower ends of the sub-pixels SP1, SP2, SP3 and SP4 in the figure, (Not shown) of the sub-pixels SP1, SP2, SP3, and SP4.

In order to obtain a nozzle mixing effect between the sub-pixels SP1, SP2, SP3 and SP4 for each of the pixels PX, the second (third) pixel electrode PX between the adjacent bank holes 174a and the transmission hole 170a The width of the bank 174 is preferably between 5 micrometers and 10 micrometers.

In the organic light emitting diode display according to the first embodiment of the present invention, the hole assist layer (182 in FIG. 3) is formed through a solution process using an injector including a nozzle. Here, the second direction intersecting with the first direction is the scanning direction of the nozzle. That is, the nozzle of the injector moves along the second direction to drop the solution into each of the through hole 170a and the bank hole 174a.

Therefore, the solution layer dropped in the bank hole 174a and the solution layer dropped in each of the transmission holes 170a in each pixel PX are stacked and mixed together, and a single solution layer is formed corresponding to each pixel PX do. Subsequently, the single solution layer is dried to form a hole auxiliary layer (182 in FIG. 3) having a uniform thickness in the sub-pixels SP1, SP2, SP3 and SP4 of each pixel PX. At this time, a remainder (182a in Fig. 3) made of the same material as the hole assist layer (182 in Fig. 3) is formed in the bank hole 174a.

Here, the hole assist layer (182 in FIG. 3) may be a hole injection layer, or may be a hole injection layer and a hole transport layer. Therefore, the remainder (182a in FIG. 3) may be formed of the same material as the hole injection layer, or may be made of the same material as the hole injection layer and the hole transport layer.

In the first embodiment of the present invention, the nozzle blending effect between the sub-pixels SP1, SP2, SP3 and SP4 can be obtained for each pixel PX by the bank hole 174a, the nozzle loading amount deviation can be reduced, Can be formed. Therefore, it is possible to prevent stains and improve image quality.

6 is a plan view schematically showing an organic light emitting diode display device according to a second embodiment of the present invention.

6, the organic light emitting diode display according to the second embodiment of the present invention includes a plurality of pixels PX, each pixel PX includes a plurality of sub-pixels SP1, SP2, SP3, SP4), and each of the sub-pixels SP1, SP2, SP3, and SP4 corresponds to one pixel region. For example, each pixel PX may include first through fourth sub-pixels SP1, SP2, SP3, and SP4 sequentially disposed along a first direction, and the first sub-pixel SP1 may include red light The second and fourth sub-pixels SP2 and SP4 emit blue light, and the third sub-pixel SP3 emits green light. The arrangement and the number of the sub-pixels SP1, SP2, SP3 and SP4 are not limited thereto, and each pixel PX includes at least one red, green and blue sub-pixel. In addition, each pixel PX may further include white subpixels in addition to red, green, and blue subpixels.

In the organic light emitting diode display according to the second embodiment of the present invention, a bank layer 170 is formed between adjacent pixel regions. The bank layer 170 includes a first bank 172 and a second bank 174 and is formed in correspondence to each pixel region, that is, first through fourth sub-pixels SP1, SP2, SP3, and SP4, (170a). The second bank 174 is located above the first bank 172 and the width of the second bank 174 is narrower than the width of the first bank 172.

On the other hand, the second bank 174 has a first bank hole 274a and a second bank hole 274b between adjacent pixel regions. At this time, the first bank hole 274a and the second bank hole 274b are located between the adjacent sub-pixels SP1, SP2, SP3 and SP4 along the first direction of each pixel PX. That is, the first bank hole 274a and the second bank hole 274b are formed between the first and second sub-pixels SP1 and SP2 and between the second and third sub-pixels SP2 and SP3, Pixels are located between the fourth sub-pixels SP3 and SP4, and no bank holes are formed between the adjacent pixels PX. The first bank hole 274a and the second bank hole 274b are connected to the sub pixels SP1, SP2, SP3 and SP4 on one end and the other end of the sub pixels SP1, SP2, SP3 and SP4, As shown in Fig. Although not shown, the first bank hole 274a is located adjacent to the thin film transistor (not shown) of the sub-pixels SP1, SP2, SP3, and SP4.

Here, in order to obtain a nozzle mixing effect between the sub-pixels SP1, SP2, SP3, and SP4 for each pixel PX, the first bank hole 274a and the transmission hole 170a adjacent to each other in each pixel PX, The width of the second bank 174 between the second bank hole 274b and the transmission hole 170a preferably has a value between 5 micrometers and 10 micrometers.

In the organic light emitting diode display according to the second embodiment of the present invention, the hole assist layer (182 in FIG. 3) is formed through a solution process using an injector including a nozzle. Here, the second direction intersecting with the first direction is the scanning direction of the nozzle. That is, the nozzle of the injector moves along the second direction to drop the solution into each of the through holes 170a, the first bank hole 274a, and the second bank hole 274b.

Therefore, the solution layer dropped in the first bank hole 274a and the second bank hole 274b in each pixel PX and the solution layer dropped in each of the transmission holes 170a are aggregated and mixed with each other, PX), a single solution layer is formed. Subsequently, the single solution layer is dried to form a hole auxiliary layer (182 in FIG. 3) having a uniform thickness in the sub-pixels SP1, SP2, SP3 and SP4 of each pixel PX. At this time, a remainder (182a in FIG. 3) made of the same material as the hole assist layer (182 in FIG. 3) is formed in the first bank hole 274a and the second bank hole 274b.

Here, the hole assist layer (182 in FIG. 3) may be a hole injection layer, or may be a hole injection layer and a hole transport layer. Therefore, the remainder (182a in FIG. 3) may be formed of the same material as the hole injection layer, or may be made of the same material as the hole injection layer and the hole transport layer.

In the second embodiment of the present invention, the nozzle blending effect between the sub-pixels SP1, SP2, SP3 and SP4 can be obtained for each pixel PX by the first bank hole 274a and the second bank hole 274b, It is possible to form a film having a uniform thickness by decreasing the nozzle drop amount deviation. Therefore, it is possible to prevent stains and improve image quality.

7 is a plan view schematically showing an organic light emitting diode display device according to a third embodiment of the present invention.

7, the organic light emitting diode display according to the third embodiment of the present invention includes a plurality of pixels PX, each pixel PX includes a plurality of sub-pixels SP1, SP2, SP3, SP4), and each of the sub-pixels SP1, SP2, SP3, and SP4 corresponds to one pixel region. For example, each pixel PX may include first through fourth sub-pixels SP1, SP2, SP3, and SP4 sequentially disposed along a first direction, and the first sub-pixel SP1 may include red light The second and fourth sub-pixels SP2 and SP4 emit blue light, and the third sub-pixel SP3 emits green light. The arrangement and the number of the sub-pixels SP1, SP2, SP3 and SP4 are not limited thereto, and each pixel PX includes at least one red, green and blue sub-pixel. In addition, each pixel PX may further include white subpixels in addition to red, green, and blue subpixels.

In the organic light emitting diode display according to the third embodiment of the present invention, a bank layer 170 is formed between adjacent pixel regions. The bank layer 170 includes a first bank 172 and a second bank 174 and is formed in correspondence to each pixel region, that is, first through fourth sub-pixels SP1, SP2, SP3, and SP4, (170a). The second bank 174 is located above the first bank 172 and the width of the second bank 174 is narrower than the width of the first bank 172.

On the other hand, the second bank 174 has a first bank hole 374a and a second bank hole 374b between adjacent pixel regions. At this time, the first bank hole 374a is located between the adjacent sub-pixels SP1, SP2, SP3, SP4 along the first direction of each pixel PX. That is, the first bank hole 374a is formed between the first and second sub-pixels SP1 and SP2, between the second and third sub-pixels SP2 and SP3, and between the third and fourth sub-pixels SP3 and SP4 . On the other hand, the second bank holes 374b are located between adjacent pixels PX along the first direction. Here, the width of the second bankhole 374b in the first direction may vary according to the distance between adjacent pixels PX, and may be greater than the width of the first bankhole 374a in the first direction. Alternatively, the width of the second bankhole 374b in the first direction may be the same as the width of the first bankhole 374a in the first direction.

The first bank hole 374a and the second bank hole 374b are connected to one end of each of the sub pixels SP1, SP2, SP3 and SP4, in more detail, at the bottom of the sub pixels SP1, SP2, SP3, Respectively. Although not shown, the first bank hole 374a and the second bank hole 374b are located adjacent to the thin film transistors (not shown) of the sub-pixels SP1, SP2, SP3, and SP4.

Here, in order to obtain the nozzle mixing effect between the sub-pixels SP1, SP2, SP3 and SP4 for each pixel PX, a difference between the adjacent first bank holes 374a and the transmission holes 170a in each pixel PX The width of the second bank 174 is preferably between 5 micrometers and 10 micrometers. The width of the second bank 174 between the adjacent second bank holes 374b and the transmission hole 170a is set to a value between 5 micrometers and 10 micrometers in order to obtain a nozzle mixing effect between adjacent pixels PX. .

In the organic light emitting diode display according to the third embodiment of the present invention, the hole assist layer (182 in FIG. 3) is formed through a solution process using an injector including a nozzle. Here, the second direction intersecting with the first direction is the scanning direction of the nozzle. That is, the nozzle of the injector moves along the second direction to drop the solution into the respective transmission holes 170a, the first bank holes 374a, and the second bank holes 374b.

Therefore, the solution layer dropped in the first bank hole 374a in each pixel PX and the solution layer dropped in each of the transmission holes 170a are aggregated and mixed with each other, and the second layer between the adjacent pixels PX The solution layer dropped in the bank hole 374a and the solution layer of each pixel PX are agglomerated and mixed together to form a single solution layer corresponding to the plurality of pixels PX. Here, the number of pixels PX in which a single solution layer is formed is not limited.

Subsequently, the single solution layer is dried to form a hole-assist layer (182 in FIG. 3) having a uniform thickness in the sub-pixels SP1, SP2, SP3 and SP4 of each of the plurality of pixels PX. At this time, a remainder (182a in FIG. 3) made of the same material as that of the hole assist layer (182 in FIG. 3) is formed in the first bank hole 374a and the second bank hole 374b.

Here, the hole assist layer (182 in FIG. 3) may be a hole injection layer, or may be a hole injection layer and a hole transport layer. Therefore, the remainder (182a in FIG. 3) may be formed of the same material as the hole injection layer, or may be made of the same material as the hole injection layer and the hole transport layer.

In the third embodiment of the present invention, the nozzle blending effect between the sub-pixels SP1, SP2, SP3 and SP4 can be obtained for each pixel PX by the first bank hole 374a, and the second bank hole 374b, It is possible to obtain a nozzle mixing effect between adjacent pixels PX. Therefore, it is possible to form a film having a uniform thickness by decreasing the nozzle drop amount deviation, to prevent stains and to improve the image quality.

8 is a plan view schematically showing an organic light emitting diode display device according to a fourth embodiment of the present invention.

8, the OLED display according to the fourth exemplary embodiment of the present invention includes a plurality of pixels PX, each pixel PX includes a plurality of sub-pixels SP1, SP2, SP3, SP4), and each of the sub-pixels SP1, SP2, SP3, and SP4 corresponds to one pixel region. For example, each pixel PX may include first through fourth sub-pixels SP1, SP2, SP3, and SP4 sequentially disposed along a first direction, and the first sub-pixel SP1 may include red light The second and fourth sub-pixels SP2 and SP4 emit blue light, and the third sub-pixel SP3 emits green light. The arrangement and the number of the sub-pixels SP1, SP2, SP3 and SP4 are not limited thereto, and each pixel PX includes at least one red, green and blue sub-pixel. In addition, each pixel PX may further include white subpixels in addition to red, green, and blue subpixels.

In the organic light emitting diode display according to the fourth embodiment of the present invention, a bank layer 170 is formed between adjacent pixel regions. The bank layer 170 includes a first bank 172 and a second bank 174 and is formed in correspondence to each pixel region, that is, first through fourth sub-pixels SP1, SP2, SP3, and SP4, (170a). The second bank 174 is located above the first bank 172 and the width of the second bank 174 is narrower than the width of the first bank 172.

On the other hand, the second bank 174 has bank holes 474a between adjacent pixel regions. At this time, the bank hole 474a is located between the adjacent sub-pixels SP1, SP2, SP3, SP4 along the first direction of each pixel PX. That is, the bank hole 474a is formed between the first and second sub-pixels SP1 and SP2 and between the second and third sub-pixels SP2 and SP3, and between the third and fourth sub-pixels SP3 and SP4 And no bank holes are formed between adjacent pixels PX. These bank holes 474a are located corresponding to the centers of the sub-pixels SP1, SP2, SP3, and SP4.

Here, in order to obtain a nozzle mixing effect between the sub-pixels SP1, SP2, SP3 and SP4 for each pixel PX, in order to obtain the effect of mixing the nozzles between the bank holes 474a and the transmission holes 170a in the pixels PX, The width of the bank 174 is preferably between 5 micrometers and 10 micrometers.

In the organic light emitting diode display according to the fourth embodiment of the present invention, the hole assist layer (182 in FIG. 3) is formed through a solution process using an injector including a nozzle. Here, the second direction intersecting with the first direction is the scanning direction of the nozzle. That is, the nozzle of the injector moves along the second direction to drop the solution into each of the through holes 170a and the bank holes 474a.

Therefore, the solution layer dropped in the bank hole 474a in each pixel PX and the solution layer dropped in each of the through holes 170a are stacked and mixed together, and a single solution layer is formed corresponding to each pixel PX do. Subsequently, the single solution layer is dried to form a hole auxiliary layer (182 in FIG. 3) having a uniform thickness in the sub-pixels SP1, SP2, SP3 and SP4 of each pixel PX. At this time, a remainder (182a in FIG. 3) made of the same material as the hole assist layer (182 in FIG. 3) is formed in the bank hole 474a.

Here, the hole assist layer (182 in FIG. 3) may be a hole injection layer, or may be a hole injection layer and a hole transport layer. Therefore, the remainder (182a in FIG. 3) may be formed of the same material as the hole injection layer, or may be made of the same material as the hole injection layer and the hole transport layer.

In the fourth embodiment of the present invention, the nozzle blending effect between the sub-pixels SP1, SP2, SP3 and SP4 can be obtained for each pixel PX by the bank hole 474a, Can be formed. Therefore, it is possible to prevent stains and improve image quality.

9 is a plan view schematically showing an organic light emitting diode display device according to a fifth embodiment of the present invention.

9, the OLED display according to the fifth embodiment of the present invention includes a plurality of pixels PX, each pixel PX includes a plurality of sub-pixels SP1, SP2, SP3, SP4), and each of the sub-pixels SP1, SP2, SP3, and SP4 corresponds to one pixel region. For example, each pixel PX may include first through fourth sub-pixels SP1, SP2, SP3, and SP4 sequentially disposed along a first direction, and the first sub-pixel SP1 may include red light The second and fourth sub-pixels SP2 and SP4 emit blue light, and the third sub-pixel SP3 emits green light. The arrangement and the number of the sub-pixels SP1, SP2, SP3 and SP4 are not limited thereto, and each pixel PX includes at least one red, green and blue sub-pixel. In addition, each pixel PX may further include white subpixels in addition to red, green, and blue subpixels.

In the organic light emitting diode display according to the fifth embodiment of the present invention, a bank layer 170 is formed between adjacent pixel regions. The bank layer 170 includes a first bank 172 and a second bank 174 and is formed in correspondence to each pixel region, that is, first through fourth sub-pixels SP1, SP2, SP3, and SP4, (170a). The second bank 174 is located above the first bank 172 and the width of the second bank 174 is narrower than the width of the first bank 172.

On the other hand, the second bank 174 has a first bank hole 574a and a second bank hole 574b between adjacent pixel regions. At this time, the first bank hole 574a is located between adjacent sub-pixels SP1, SP2, SP3, SP4 along the first direction of each pixel PX. That is, the first bank hole 574a is provided between the first and second sub-pixels SP1 and SP2, between the second and third sub-pixels SP2 and SP3, and between the third and fourth sub-pixels SP3 and SP4 . On the other hand, the second bank holes 574b are located between adjacent pixels PX along the first direction. Here, the width of the second bank hole 574b in the first direction may vary depending on the distance between adjacent pixels PX, and may be larger than the width of the first bank hole 574a in the first direction. Alternatively, the width of the second bank hole 574b in the first direction may be the same as the width of the first bank hole 574a in the first direction.

The first bank hole 574a and the second bank hole 574b correspond to the centers of the sub-pixels SP1, SP2, SP3, and SP4.

Here, in order to obtain a nozzle mixing effect between the sub-pixels SP1, SP2, SP3, and SP4 for each pixel PX, it is preferable that the distance between the adjacent first bank holes 574a and the transmission holes 170a in each pixel PX The width of the second bank 174 is preferably between 5 micrometers and 10 micrometers. The width of the second bank 174 between the adjacent second bank holes 574b and the transmission hole 170a is set to a value between 5 micrometers and 10 micrometers in order to obtain a nozzle mixing effect between adjacent pixels PX. .

In the organic light emitting diode display according to the fifth embodiment of the present invention, the hole assist layer (182 in FIG. 3) is formed through a solution process using an injector including a nozzle. Here, the second direction intersecting with the first direction is the scanning direction of the nozzle. That is, the nozzles of the injection device move along the second direction to drop the solution into the respective through holes 170a and the first bank holes 574a and the second bank holes 574b.

Therefore, the solution layer dropped in the first bank hole 574a and the solution layer dropped in each of the transmission holes 170a in each pixel PX are aggregated and mixed with each other, and the second layer between the adjacent pixels PX The solution layer dropped in the bank hole 574a and the solution layer of each pixel PX are stacked and mixed together to form a single solution layer corresponding to the plurality of pixels PX. Here, the number of pixels PX in which a single solution layer is formed is not limited.

Subsequently, the single solution layer is dried to form a hole-assist layer (182 in FIG. 3) having a uniform thickness in the sub-pixels SP1, SP2, SP3 and SP4 of each of the plurality of pixels PX. At this time, a remainder (182a in FIG. 3) made of the same material as the hole assist layer (182 in FIG. 3) is formed in the first bank hole 574a and the second bank hole 574b.

Here, the hole assist layer (182 in FIG. 3) may be a hole injection layer, or may be a hole injection layer and a hole transport layer. Therefore, the remainder (182a in FIG. 3) may be formed of the same material as the hole injection layer, or may be made of the same material as the hole injection layer and the hole transport layer.

In the fifth embodiment of the present invention, the nozzle blending effect between the sub-pixels SP1, SP2, SP3 and SP4 can be obtained for each pixel PX by the first bank hole 574a, and the second bank hole 574b, It is possible to obtain a nozzle mixing effect between adjacent pixels PX. Therefore, it is possible to form a film having a uniform thickness by decreasing the nozzle drop amount deviation, to prevent stains and to improve the image quality.

10 is a plan view schematically showing an organic light emitting diode display device according to a sixth embodiment of the present invention.

10, the organic light emitting diode display according to the sixth embodiment of the present invention includes a plurality of pixels PX, each pixel PX includes a plurality of sub-pixels SP1, SP2, SP3, SP4), and each of the sub-pixels SP1, SP2, SP3, and SP4 corresponds to one pixel region. For example, each pixel PX may include first through fourth sub-pixels SP1, SP2, SP3, and SP4 sequentially disposed along a first direction, and the first sub-pixel SP1 may include red light The second and fourth sub-pixels SP2 and SP4 emit blue light, and the third sub-pixel SP3 emits green light. The arrangement and the number of the sub-pixels SP1, SP2, SP3 and SP4 are not limited thereto, and each pixel PX includes at least one red, green and blue sub-pixel. In addition, each pixel PX may further include white subpixels in addition to red, green, and blue subpixels.

In the organic light emitting diode display according to the sixth embodiment of the present invention, a bank layer 170 is formed between adjacent pixel regions. The bank layer 170 includes a first bank 172 and a second bank 174 and is formed in correspondence to each pixel region, that is, first through fourth sub-pixels SP1, SP2, SP3, and SP4, (170a). The second bank 174 is located above the first bank 172 and the width of the second bank 174 is narrower than the width of the first bank 172.

On the other hand, the second bank 174 has bank holes 674a between adjacent pixel regions. At this time, the bank hole 674a is located between the sub-pixels SP1, SP2, SP3, and SP4 of the adjacent pixel PX along the second direction. That is, the bank holes 674a are located between the sub-pixels SP1, SP2, SP3, and SP4 that emit light of the same color. The width of the bank hole 674a in the second direction may be larger than the width in the first direction.

Here, in order to obtain a nozzle mixing effect between the sub-pixels SP1, SP2, SP3, and SP4 that emit light of the same color, the width of the second bank 174 between the adjacent bank holes 674a and the transmission hole 170a is And has a value between 5 micrometers and 10 micrometers.

In the organic light emitting diode display according to the sixth embodiment of the present invention, the hole assist layer (182 in FIG. 3) and the light emitting material layer (184 in FIG. 3) are formed by a solution process . Here, the first direction is the scanning direction of the nozzle. That is, the nozzle of the injector moves along the first direction to drop the solution into each of the through hole 170a and the bank hole 674a.

Therefore, the solution layer dropped in the transmission hole 170a of the sub-pixels SP1, SP2, SP3, and SP4 emitting the same color and the solution layer dropped in the bank hole 474a between them are aggregated and mixed with each other, A single solution layer is formed corresponding to the sub-pixels SP1, SP2, SP3 and SP4 emitting the same color. Then, the single solution layer is dried to form a hole assist layer (182 in FIG. 3) and / or a light emissive material layer (FIG. 3) having a uniform thickness in the sub-pixels SP1, SP2, SP3, SP4 of each pixel PX. 184). At this time, a remainder (182a in FIG. 3) made of the same material as the hole assist layer (182 in FIG. 3) and / or the light emitting material layer (184 in FIG. 3) is formed in the bank hole 674a.

Here, the hole assist layer (182 in FIG. 3) may be a hole injection layer, or may be a hole injection layer and a hole transport layer.

In the sixth embodiment of the present invention, since the nozzle blending effect can be obtained between the sub-pixels SP1, SP2, SP3, and SP4 that emit light of the same color by the bank holes 674a, In addition, in forming the luminous material layer (184 in FIG. 3), it is possible to reduce the deviation of the nozzle loading amount and to form a film of uniform thickness. Therefore, it is possible to prevent stains and improve image quality.

While the hole assist layer and the light emitting material layer are formed by a solution process and the electron assist layer is formed by a vacuum deposition process in the embodiment of the present invention, the electron assist layer may be formed by a solution process have. At this time, the electron-assisted layer may also be formed through the same process as the hole-assisted layer forming process of FIGS. 4E to 4G and may have a uniform thickness corresponding to each pixel region by the nozzle-shuffling effect.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined in the appended claims. And changes may be made without departing from the spirit and scope of the invention.

110: substrate 122: semiconductor layer
130: gate insulating film 132: gate electrode
140: interlayer insulating film 140a, 140b: first and second contact holes
142: source electrode 144: drain electrode
152, 154: first and second protective films 156: drain contact holes
162: Substrate electrode 170: Bank layer
172: first bank 174: second bank
170a: Through hole 174a: Bank hole
180: light emitting layer 182: hole assist layer
184: luminescent material layer 186: electron assist layer
182a: residual film 192: second electrode

Claims (9)

Claims [1]
A thin film transistor on the substrate;
A first electrode connected to a drain electrode of the thin film transistor;
A bank layer covering the edge of the first electrode and having a through hole corresponding to the first electrode, the bank layer including a first bank and a second bank above the first bank;
A light emitting layer located above the first electrode in the transmission hole;
The second electrode
/ RTI >
The second bank having bank holes between adjacent sub-pixels,
And a remaining film including the same material as the light emitting layer is disposed in the bank hole.
The method according to claim 1,
And the width of the second bank between the adjacent through hole and the bank hole has a value between 5 micrometers and 10 micrometers.
The method according to claim 1,
Wherein the light emitting layer includes a hole assist layer, a light emitting material layer, and an electron assist layer, and the remaining layer includes the same material as the hole assist layer.
The method of claim 3,
Wherein the remaining film further comprises the same material as the light emitting material layer.
5. The method of claim 4,
And the adjacent sub-pixels emit light of the same color.
The method according to claim 1,
Wherein the bank hole includes a first bank hole and a second bank hole,
Wherein the first bank hole is located between adjacent sub-pixels of one pixel, and the second bank hole is located between adjacent pixels.
Forming a thin film transistor on a substrate;
Forming a protective film on the thin film transistor;
Forming a first electrode connected to the drain electrode of the thin film transistor on the protective film;
Forming a first bank covering an edge of the first electrode;
Forming a second bank having a bank hole above the first bank between adjacent sub-pixels and having a transmission hole exposing the first electrode together with the first bank;
Forming a light emitting layer on the first electrode in the transmission hole;
Forming a second electrode on the light emitting layer
Lt; / RTI >
Wherein the forming of the light emitting layer includes forming a remaining film in the bank hole.
8. The method of claim 7,
The forming of the light emitting layer may include:
Forming a first solution layer in a transmission hole of the adjacent sub-pixel;
Forming a second solution layer in the bank hole in contact with the first solution layer;
Forming a single solution layer in the adjacent sub-pixels by causing the first solution layer and the second solution layer to be aggregated and mixed with each other;
Drying the single solution layer
Wherein the organic light emitting diode display device comprises:
9. The method of claim 8,
Wherein the forming of the light emitting layer includes forming a hole auxiliary layer or forming a hole assist layer and a light emitting material layer.

Images