KR20160132189A - Method for separation of carbon parts for manufacturing of polycrystalline silicon and silicon - Google Patents

Method for separation of carbon parts for manufacturing of polycrystalline silicon and silicon Download PDF

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KR20160132189A
KR20160132189A KR1020150063342A KR20150063342A KR20160132189A KR 20160132189 A KR20160132189 A KR 20160132189A KR 1020150063342 A KR1020150063342 A KR 1020150063342A KR 20150063342 A KR20150063342 A KR 20150063342A KR 20160132189 A KR20160132189 A KR 20160132189A
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carbon
silicon
polycrystalline silicon
carbon part
separating
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KR101811690B1 (en
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김국광
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김국광
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification

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Abstract

Disclosed is a method for separating silicon from a carbon component for producing polycrystalline silicon, which can remarkably improve the regeneration productivity of carbon parts and maximize the recycling rate of the polycrystalline silicon adhered to the carbon parts. A silicon cutting step of cutting and removing polycrystalline silicon adhered to the carbon part by a predetermined thickness within a range in which no physical damage is applied to the carbon part; A silicon separating step of separating the polycrystalline silicon from the carbon part by infiltrating the silicon separating solution between the contact surfaces of the remaining polycrystalline silicon adhered to the polycrystalline silicon and the carbon part, And a carbon part cleaning step of repeatedly cleaning the carbon parts using water to remove the carbon parts.

Description

TECHNICAL FIELD [0001] The present invention relates to a method for separating carbon from a carbon material for polycrystalline silicon,

The present invention relates to a method for separating carbon parts for polycrystalline silicon production and silicon, and more particularly, to a method for separating carbon parts for polycrystalline silicon production from carbon parts used in producing high purity polycrystalline silicon for use in solar cells or semiconductors. And to a method for separating silicon and a carbon part for manufacturing polycrystalline silicon, which enables the separated silicon to be recycled.

Generally, polycrystalline silicon used in solar cells or semiconductors requires high purity. As the apparatus for producing polycrystalline silicon requiring high purity as described above, a manufacturing apparatus employing the Siemens method is widely known.

When a raw material gas containing a mixed gas of chlorosilane gas and hydrogen gas is supplied to bring the silicon rod in the reaction furnace into contact with the silicon rod through the manufacturing apparatus employing the Siemens method, The hydrogen reduction reaction and the thermal decomposition reaction of the raw material gas are generated on the surface of the silicon rod to precipitate the polycrystalline silicon.

On the other hand, in the case of a component used in the reaction furnace, parts made of carbon are used in order to prevent contamination of silicon. Particularly, in the case of parts such as a carbon chuck (graphite chuck) or a carbon bar, the consumable parts are discarded after they are used.

In order to reduce the amount of consumed carbon parts consumed, carbon parts are recycled through a method of carving out silicon adhered to the surfaces of the carbon parts. However, a method of carving out silicon adhering to the surface of carbon parts There is a problem in that the strength of the regenerated carbon product is lowered due to the physical damage to the carbon product due to the contact between the tool and the carbon product when the carbon part is regenerated. There is a problem that the recycling rate of the silicon is lowered.

On the other hand, in the case of the above-described carbon chuck, the carbon chuck is manufactured as a separate type rather than being integrated as a reusable type.

Fig. 4 is a view for explaining a detachable carbon chuck which is generally used.

Referring to FIG. 4, the detachable carbon chuck 110 may include a first body part 111, a second body part 112, and a carbon leaf 113.

The first body part 111 is formed by connecting first and second hole parts 111a and 111b having diameters different from each other on an inner peripheral surface of the first body part 111. A thread may be formed on the first hole part 111a.

The second body part 112 may have a thread formed on the outer circumferential surface thereof and may be screwed to the first hole part 111a of the first body part 111. [

A plurality of the carbon leaves 113 are fixedly interposed between the first and second body parts 111 and 112 and at least a part of the carbon leaf 113 is fixed to the second body part 111b through the second hole part 111b of the first body part 111, And protrudes outside the first body part 111 to fix the seed 114 on which the polycrystalline silicon 120 is formed.

When the formation of the polycrystalline silicon 120 is completed in the case of the removable carbon chuck 110, the second body part 112 is separated from the first body part 111, The carbon leaf 113 fixing the first and second body parts 114 and 112 is also separated from the first and second body parts 111 and 112.

At this time, the carbon leaf 113 separated from the first and second body parts 111 and 112 is discarded after being used once, and the first and second body parts 111 and 112 are reused . However, even in the case of the first and second body parts 111 and 112, the polycrystalline silicon 120 is accumulated on the surface every time when it is used, and if it is reused about 3 to 4 times, it can not be reused There is a problem that it must be discarded.

Recently, as disclosed in Korean Patent Laid-Open Publication No. 2014-0105910 (published on Sep. 03, 2014, entitled "Method for Recycling Carbon Parts in a Polysilicon Production Chamber"), silicon adhered to carbon parts There has been developed and used a method of removing silicon by a physical method and etching the silicon remaining on the carbon part by a chemical method.

However, in the conventional method of removing the polycrystalline silicon adhered to the carbon part, the polycrystalline silicon attached to the carbon part is removed first by a physical method, and then the remaining polycrystalline silicon is secondarily The polycrystalline silicon adhered to the carbon part is removed through a physical method so as to be close to the external shape of the carbon part, so that the physical removal time of the polycrystalline silicon is very long and troublesome.

That is, in the conventional method of removing polycrystalline silicon adhered to a carbon part, when the thickness of the polycrystalline silicon adhered to the carbon part is large, the polycrystalline silicon adhered to the carbon part is finally wet etched, that is, Not only the polycrystalline silicon from the carbon part takes a long time to be removed but also the polycrystalline silicon is not properly removed so that only polycrystalline silicon of about 0.1 mm to 8 mm from the surface of the carbon part is left, Polycrystalline silicon must be removed through physical methods.

Thus, in order to remove the polycrystalline silicon adhered to the carbon part through the physical method, first, the polycrystalline silicon adhered to the upper part of the carbon part is removed through the diamond wheel, and then the diamond core is attached to the periphery of the carbon part using the diamond core The polycrystalline silicon adhered to the periphery of the carbon part is removed secondarily by leaving only the polycrystalline silicon of about 0.1 mm to 8 mm from the surface of the carbon part by the water jet cutting method Thus, there is a problem that the operation time for removing polycrystalline silicon from the carbon part takes a very long time and is complicated and the productivity is lowered.

Meanwhile, as described above, the conventional silicon removing method can not separate silicon from broken carbon parts, and when silicon is separated from carbon parts, a considerable amount of silicon can not be recycled and discarded, There is a problem in that the recycling rate of the battery is lowered.

Korean Patent Laid-Open Publication No. 2014-0105910 (Publication Date: Sep. 03, 2014, entitled: Method for regenerating carbon parts in a polycrystalline silicon production chamber)

Therefore, it is an object of the present invention to provide a method of regenerating a carbon part by completely separating only polycrystalline silicon adhering to the surface of a carbon part from a carbon part without applying a physical change to the carbon part, And a method for separating silicon from a carbon part for producing polycrystalline silicon.

It is another object of the present invention to provide a method for separating silicon from a carbon part for producing polycrystalline silicon, which can shorten the process of separating the polycrystalline silicon from the carbon part, thereby improving the regeneration productivity of the carbon part and the polycrystalline silicon.

It is another object of the present invention to provide a method for separating silicon from a carbon part for producing polycrystalline silicon, which can completely separate and recycle polycrystalline silicon from broken carbon parts.

Other objects and advantages of the present invention will become apparent to those skilled in the art from the following detailed description.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a silicon cutting step of cutting and removing a predetermined thickness of polycrystalline silicon adhered to a carbon part within a range in which no physical damage is applied to the carbon part; A silicon separating step of separating the carbon part from the polycrystalline silicon by penetrating the silicon separating solution between the contact surfaces of the remaining polycrystalline silicon and the carbon part and removing the silicon separating solution absorbed in the carbon parts from which the polycrystalline silicon is separated And a carbon part cleaning step of repeatedly cleaning the carbon part by using water to separate the carbon part for producing polycrystalline silicon from silicon.

For example, in the silicon cutting step, the polycrystalline silicon attached to the carbon part can be cut and removed by a predetermined thickness by a diamond wheel.

For example, the silicon separation solution may be an alkali solution capable of separating the contact surfaces of the polycrystalline silicon and the carbon part from each other.

In another example, the silicon separation solution may include an alkali solution capable of separating the contact surfaces of the polycrystalline silicon and the carbon part from each other, and a surfactant penetrating between the contact surfaces of the polycrystalline silicon and the carbon part separated by the alkali solution .

The method may further include a drying step of heating and drying the carbon part to remove moisture from the cleaned carbon part.

In the drying step, the cleaned carbon part may be dried by heating to a temperature of at least 150 ° C in a state not in contact with oxygen.

For example, the cleaned carbon part can be heated and dried in a heating means in a vacuum state.

As another example, the cleaned carbon part may be heated and dried in a heating means in which a gas which does not react with the carbon parts is injected therein.

As described above, the method of separating silicon from a carbon part for manufacturing polycrystalline silicon according to an embodiment of the present invention can simplify a silicon cutting process for physically removing polycrystalline silicon from a carbon part, It is possible to remarkably improve the regeneration productivity of carbon parts for producing polycrystalline silicon.

In addition, there is no physical damage to the carbon part during the silicon cutting operation for physically removing the polycrystalline silicon from the carbon part, and the carbon part is not in contact with oxygen during the high-temperature drying of the cleaned carbon part So that oxidation of the carbon part is prevented and the regeneration rate of the carbon part is remarkably improved.

Since the polycrystalline silicon can be completely separated from the carbon part by penetrating the silicon separation solution between the contact surfaces of the remaining polycrystalline silicon and the carbon part attached to the carbon part after the silicon cutting step, The polycrystalline silicon can be recycled even if the polycrystalline silicon is damaged from the damaged carbon parts. Therefore, the recycling rate of the polycrystalline silicon can be maximized.

Thus, the present invention can remarkably improve the regeneration productivity and regeneration ratio of the carbon parts, and can improve the recycling rate of the polycrystalline silicon, thereby ultimately reducing the manufacturing cost of the polycrystalline silicon.

The effects of the present invention will be clearly understood and understood by those skilled in the art, either through the specific details described below, or during the course of practicing the present invention.

1 is a flow chart for explaining a method of separating a carbon part for producing polycrystalline silicon from silicon according to an embodiment of the present invention
2 is a view for explaining a silicon cutting step according to an embodiment of the present invention;
3 is a view for explaining a silicon cutting step by a conventional carbon part regeneration method
Fig. 4 is a view for explaining a detachable carbon chuck which is generally used.

The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprising" or "having ", and the like, are intended to specify the presence of stated features, integers, steps, operations, elements, parts, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, or combinations thereof.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the meaning in the context of the relevant art and are to be interpreted as ideal or overly formal in meaning unless explicitly defined in the present application Do not.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

FIG. 1 is a flow chart for explaining a method of separating a carbon part for polycrystalline silicon production and silicon according to an embodiment of the present invention, FIG. 2 is a view for explaining a silicon cutting step according to an embodiment of the present invention, 3 is a view for explaining the silicon cutting step by the conventional carbon part regeneration method.

Referring to FIGS. 1 to 3, a method of separating silicon and a carbon part for polycrystalline silicon production according to an embodiment of the present invention includes a silicon cutting step S110, a silicon separation step S120, and a cleaning step S130 can do.

The silicon cutting step S110 is a step of cutting the polycrystalline silicon 120 attached to the carbon part 110 by a predetermined thickness and removing the polycrystalline silicon 120 within a range in which the carbon part 110 is not physically damaged.

For example, in the silicon cutting step S110, the polycrystalline silicon 120 attached to the carbon part 110 is cut and removed by a predetermined thickness using a diamond wheel.

3, in the silicon cutting step using the conventional carbon part regeneration method, the polycrystalline silicon 120 attached to the upper end portion of the carbon part 110 is first cut to a predetermined thickness The polycrystalline silicon 120 attached to the outer circumferential surface of the carbon part 110 is removed by a predetermined thickness using a diamond core and then the outer shape of the carbon part 110 is cut by a water jet cutting method using a slurry, So that the polycrystalline silicon 120 attached to the outer circumferential surface of the carbon part 110 is removed.

On the other hand, in the silicon cutting step S110 according to the method of separating the silicon part from the carbon part for producing polycrystalline silicon according to the embodiment of the present invention, as shown in FIG. 2, The silicon cutting step S110 is completed by cutting and removing the attached polycrystalline silicon 120 by a predetermined thickness only.

As described above, in the method of separating silicon from a carbon part for producing polycrystalline silicon according to an embodiment of the present invention, only the polycrystalline silicon 120 attached to the upper part of the carbon part 110 is cut to a predetermined thickness, The polycrystalline silicon 120 attached to the outer circumferential surface of the carbon part 110 is not physically removed so that the carbon part 110 to be regenerated is not physically damaged and the carbon part 110 ) Can be improved.

After the polycrystalline silicon 120 attached to the carbon part 110 is cut and removed, the silicon separation step S120 is performed to remove the remaining polycrystalline silicon 120 attached to the carbon part 110 from the carbon part 110).

The silicon separation step S120 may be performed by penetrating the silicon separation solution between the contact surfaces of the remaining polycrystalline silicon 120 adhered to the carbon part 110 and the carbon part 110 to separate the carbon part 110 and the polycrystalline silicon 120 are separated.

For example, in the silicon separation step (S120), when the carbon part 110 from which the polycrystalline silicon 120 attached to the upper part is removed is submerged in the silicon separation solution, the silicon separation solution is separated from the polycrystalline silicon 120, So that the polycrystalline silicon 120 is separated from the carbon part 110.

For example, as the silicon separation solution, an alkali solution can be used. More preferably, 5% to 50% of calcium hydroxide (KOH) solution may be used as the silicon separation solution.

Meanwhile, the silicon separation solution may further contain a surfactant. Here, the surfactant may be mixed with 0.01% to 5% of the silicon separation solution.

In the case of the surfactant, in order to shorten the time for separating the polycrystalline silicon 120 from the carbon part 110 by increasing the penetration rate of the alkali solution between the contact surfaces of the polycrystalline silicon 120 and the carbon part 110 do.

After the remaining polycrystalline silicon 120 adhered to the carbon part 110 is separated from the carbon part 110 as described above, the carbon part 110 is cleaned through the cleaning step S130.

The cleaning step S130 is a step of repeatedly cleaning the carbon part 110 using water in order to remove the silicon separation solution absorbed by the separated carbon part 110 of the polycrystalline silicon 120. [

Meanwhile, the method for separating silicon from a carbon part for producing polycrystalline silicon according to an embodiment of the present invention may further include a drying step (S140) after the cleaning step (S130).

In the drying step S140, the carbon part 110 is repeatedly washed with water to remove the silicon separation solution absorbed in the carbon part 110, and the carbon part 110 is heated to a predetermined temperature to be dried .

For example, the carbon product 110 may be dried by heating to a temperature of at least 150 ° C. Preferably, the carbon product 110 may be dried by heating at a temperature of 150 ° C to 1500 ° C.

Meanwhile, in the drying step (S140), the cleaned carbon part 110 may be heated and dried without being in contact with oxygen.

For example, in the drying step (S140), the cleaned carbon part (110) may be heated to a temperature of 150 ° C to 1500 ° C in a heating means in a vacuum state.

Alternatively, the carbon part 110 cleaned in the drying step S140 may be heated at a temperature of 150 ° C to 1500 ° C in a heating means (not shown) into which a gas which does not react with the carbon part 110 is introduced Can be heated and dried.

As the gas that does not react with the carbon part 110, an inert gas such as nitrogen gas, helium gas, or argon gas may be used.

Alternatively, a gas which does not react with the carbon part 110 may be a hydrogen gas, a mixed gas of hydrogen and nitrogen, or a chlorine gas.

In the drying step (S140), a heating means such as an oven is made to be in a vacuum state, or a gas not reacting with the carbon part (110) is injected into the heating means to heat the carbon part (110) To be dried.

As described above, the carbon part 110 is heated and dried at a high temperature in a state not in contact with oxygen, thereby shortening the drying time of the carbon part 110 and preventing oxidation of the carbon part 110 .

In addition, an inert gas, a hydrogen gas, a nitrogen gas, a mixed gas of hydrogen and nitrogen, and a chlorine gas that do not react with the carbon part 110 prevent oxidation of the carbon part 110 and improve the heat transfer rate The drying time of the carbon part 110 can be further shortened.

Meanwhile, the method of separating the carbon part for producing polycrystalline silicon from silicon according to an embodiment of the present invention may include a method of separating the carbon part 110 from the dried carbon part 110, Step S150 may be further included.

For example, in the packaging step S150, the carbon part 110 may be packed using a wrapping paper on which particles are not generated.

1 and FIG. 3, the operation and effect of the method for separating silicon from a carbon part for producing polycrystalline silicon according to an embodiment of the present invention will be described.

Referring to FIGS. 1 to 3, a method of separating silicon and a carbon component for producing polycrystalline silicon according to an exemplary embodiment of the present invention includes a step of forming a polycrystalline silicon layer on a surface of a carbon product 110, The silicon separation solution is penetrated between the contact surfaces of the carbon part 110 and the polycrystalline silicon 120 so that the carbon part 110 and the polycrystalline silicon 120 are not etched by wet etching, 120 are removed to remove the polycrystalline silicon 120 from the carbon part 110.

More specifically, the polycrystalline silicon 120 having a very thin thickness of about 0.1 mm to 8 mm is etched through the wet etching process to remove the polycrystalline silicon 120 on the surface of the carbon product 110. Therefore, the polycrystalline silicon 120 attached to the carbon part 110 must be physically and precisely removed in three steps, such as diamond wheel cutting, diamond core cutting, and water jet cutting, The polycrystalline silicon 120 attached to the carbon part 110 can be completely removed by a wet etching method.

On the other hand, in the method of separating silicon from a carbon part for producing polycrystalline silicon according to an embodiment of the present invention, when the polycrystalline silicon 120 attached to the surface of the carbon product 110 is finally removed, The silicon separating solution is permeated through the contact surfaces of the polycrystalline silicon 120 to separate the polycrystalline silicon 120 from the carbon part 110 to remove the polycrystalline silicon 120. Therefore, in the silicon cutting step (S110) of physically removing the polycrystalline silicon 120 adhered to the carbon part 110, the polycrystalline silicon 120 attached to the carbon part 110 in one step using only the diamond wheel The remaining polycrystalline silicon 120 may be separated and removed from the carbon part 110 in the silicon separation step S120 even if the polycrystalline silicon 120 is roughly removed.

As described above, the method for recycling carbon parts for manufacturing polycrystalline silicon according to an embodiment of the present invention includes a step of removing the polycrystalline silicon 120 attached to the carbon parts 110 by a physical method And the regeneration productivity of the carbon part 110 can be improved.

In addition, when the polycrystalline silicon 120 is removed from the carbon product 110 in the silicon cutting step S110, the carbon component 110 is sufficiently removed from the carbon component 110 so that the carbon component 110 is not physically damaged. Only the spaced part of the polycrystalline silicon 120 may be cut and removed using a diamond wheel.

Therefore, by preventing the physical damage to the carbon part 110 due to the polycrystalline silicon cutting operation, the regeneration ratio of the carbon part 110 used for manufacturing the polycrystalline silicon can be improved.

Conventionally, in the case of polycrystalline silicon which is removed by water jet cutting and polycrystalline silicon which is corroded through a wet etching method, it can not be recycled and the recycling ratio of the polycrystalline silicon is lowered.

However, the method of separating silicon from polycrystalline silicon 120 and the carbon part 110 according to an embodiment of the present invention may be performed by penetrating the silicon separation solution between the contact surfaces of the polycrystalline silicon 120 and the carbon part 110, Since the polycrystalline silicon 120 can be completely separated, the polycrystalline silicon 120 can be recycled without loss, thereby improving the recycling rate of the polycrystalline silicon 120.

In addition, the method of separating the carbon parts for polycrystalline silicon production according to an embodiment of the present invention may include the steps of penetrating the silicon separation solution between the contact surfaces of the carbon part 110 and the polycrystalline silicon 120, It is possible to separate and recycle the polycrystalline silicon 120 from the carbon part 110 even if the carbon part 110 having the polycrystalline silicon 120 is broken by allowing the polycrystalline silicon 120 to be separated from the polycrystalline silicon 120, The recycling rate of the silicon 120 can be further improved.

In the drying step S140 of drying the cleaned carbon parts 110, the carbon parts 110 are heated to a high temperature in a state in which they are not in contact with oxygen, thereby drying the carbon parts 110 to prevent oxidation of the carbon parts 110 The regeneration ratio of the carbon part 110 can be further improved.

Meanwhile, in the drying step (S140), the carbon part 110 may be heated and dried in a heating unit to which a gas not reacting with carbon is charged. At this time, inert gas, hydrogen gas, Nitrogen gas, a mixed gas of hydrogen and nitrogen, and chlorine gas can improve the heat transfer rate and shorten the drying time of the carbon part 110.

As described above, the method for separating silicon from a carbon part for manufacturing polycrystalline silicon according to an embodiment of the present invention can simplify the silicon cutting process for physically removing the polycrystalline silicon 120 from the carbon part 110, Since the drying time of the carbon part 110 can be shortened, the regeneration productivity of the carbon part 110 for manufacturing polycrystalline silicon can be remarkably improved.

In addition, not only physical damage is applied to the carbon part 110 during the silicon cutting operation for physically removing the polycrystalline silicon 120 from the carbon part 110, The carbon part 110 is heated to a high temperature in a state in which the carbon part 110 is not in contact with oxygen at the time of drying, thereby preventing oxidation of the carbon part 110 and greatly improving the regeneration ratio of the carbon part.

After the silicon cutting step S110, the silicon separating solution penetrates between the contact surfaces of the remaining polycrystalline silicon 120 attached to the carbon part 110 and the carbon part 110, so that the polycrystalline silicon 120 is removed from the carbon part 110, It is possible to minimize the loss of the polycrystalline silicon 120 separated from the carbon part 110 and recycled to the polycrystalline silicon 120 from the broken carbon part 110, The recycling rate of the polycrystalline silicon 120 can be maximized.

Thus, the present invention can significantly improve the regeneration productivity and regeneration ratio of the carbon part 110 and improve the recycling rate of the polycrystalline silicon 120, and ultimately reduce the manufacturing cost of the polycrystalline silicon 120 There is an effect that can be done.

It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as set forth in the following claims It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

(110): carbon part (120): polycrystalline silicon

Claims (8)

A silicon cutting step of cutting and removing polycrystalline silicon adhered to the carbon part by a predetermined thickness within a range in which the carbon part is not physically damaged;
A silicon separating step of separating the carbon part from the polycrystalline silicon by penetrating the silicon separation solution between the contact surfaces of the remaining polycrystalline silicon adhered to the carbon part and the carbon part; And
And a carbon part cleaning step of repeatedly cleaning the carbon part by using water to remove the silicon separation solution absorbed by the separated carbon parts of the polycrystalline silicon. The method according to claim 1,
In the silicon cutting step,
Wherein the polycrystalline silicon adhered to the carbon part is cut and removed by a predetermined thickness by a diamond wheel. The method according to claim 1,
The silicon separation solution may contain,
Wherein the polycrystalline silicon is an alkaline solution capable of separating the contact surfaces of the polycrystalline silicon and the carbon parts from each other. The method according to claim 1,
The silicon separation solution may contain,
An alkaline solution capable of separating the contact surfaces of the polycrystalline silicon and the carbon component from each other and a surfactant penetrating between the contact faces of the polycrystalline silicon and the carbon component separated by the alkali solution are mixed with each other, And silicon. The method according to claim 1,
Further comprising a drying step of heating and drying the carbon part to remove moisture from the cleaned carbon part, and a method of separating silicon from a carbon part for producing polycrystalline silicon. 6. The method of claim 5,
In the drying step,
Wherein the cleaned carbon part is heated by being heated to a temperature of at least 150 ° C in a state in which it is not in contact with oxygen, so that the carbon part for manufacturing polycrystalline silicon and the silicon are separated. The method according to claim 6,
Wherein the cleaned carbon part is heated and dried in a heating means in a vacuum state. The method according to claim 6,
Wherein the cleaned carbon part is heated and dried in a heating means in which a gas which does not react with the carbon part is injected into the inside of the cleaned carbon part.
KR1020150063342A 2015-05-06 2015-05-06 Method for separation of carbon parts for manufacturing of polycrystalline silicon and silicon KR101811690B1 (en)

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