KR20160127658A - Front end circuit, module, and communication device - Google Patents

Abstract

The purpose of the present invention is to restrict interference between multiple bands. The present invention provides a front end circuit comprises a first antenna terminal T1, second antenna terminal T2, low band (LB) terminal TL, middle band (MB) terminal TM, high band (HB) terminal TH and a demultiplexer circuit. The first antenna terminal T1 is connected to an antenna and allows outputting/inputting of a transmission/reception signal between an LB and an HB with frequency higher than the LB. The second antenna terminal T2 allows outputting/inputting of a transmission/reception signal of a middle band (MB) with a higher frequency than the LB and lower than the HB. The LB terminal TL allows inputting/outputting of a transmission/reception signal of the LB. The MB terminal TM allows inputting/outputting of a transmission/reception signal of the LB. The HB terminal TH allows inputting/outputting of a transmission/reception signal of the HB. The demultiplexer circuit allows the transmission/reception signal to pass between the first antenna terminal and the LB terminal, blocks the transmission/reception signals of the MB and the HB, allows the transmission/reception signal of the HB to pass between the first antenna terminal and the HB terminal, and blocks the transmission/reception signal of the LB and the MB.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a front end circuit, a module,

The present invention relates to a front end circuit, a module and a communication device.

In a wireless communication device such as a cellular phone terminal, a plurality of bands may be transmitted and received. For example, LTE (Long Term Evolution) uses a low band of 1 GHz or less, a middle band around 2 GHz, and a high band around 2.5 GHz. The low band, the middle band, and the high band include a plurality of bands including a transmission band and a reception band, respectively.

Patent Literatures 1 to 3 disclose that a diplexer is used to commonly use an antenna terminal of a low band and a middle band. Patent Document 2 discloses the use of independent antenna terminals for low band, middle band and high band. Patent Document 3 describes the arrangement of a plurality of band filters.

Japanese Patent Publication No. 2014-526847 U.S. Patent Application Publication No. 2006/0128393 International Publication No. 2012/093539

As shown in Patent Documents 1 and 2, if the antenna terminals are provided independently, the interference between the bands can be suppressed (for example, the isolation can be improved), but three RF (Radio Frequency) And larger. On the other hand, if antenna terminals are shared, cost reduction and miniaturization can be achieved, but interference between the bands is increased. For example, if three antenna terminals are shared, only one RF connector is required, but the loss and / or interference between the bands of the multiplexer becomes large. Further, in the methods of Patent Documents 1 to 3, suppression of interference between a plurality of bands is not sufficient.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to enable cost reduction and miniaturization, and to suppress interference between a plurality of bands.

A first antenna terminal connected to an antenna and to which a transmission signal and a reception signal of a low band and a high band having a frequency higher than the low band are respectively outputted and inputted; A second antenna terminal for receiving and inputting a transmission signal and a reception signal of a middle band having a frequency higher than that of the low band and a frequency lower than that of the low band respectively and a second antenna terminal for receiving and inputting low band transmission and reception signals, A middle band terminal through which a transmission signal and a reception signal of the middle band are input and output respectively, a high band terminal through which the high band transmission signal and a reception signal are input and output, The low band terminal and the low band terminal are allowed to pass the transmission signal and the reception signal of the low band, Band signal and a reception signal of the low-band and the middle-band, and transmits the high-band transmission signal and the reception signal between the first antenna terminal and the high- And a demultiplexing circuit for interrupting the output of the demultiplexer.

In the above configuration, the branching circuit may include: a low-pass filter connected between the first antenna terminal and the low-band terminal; and a high-pass filter connected between the first antenna terminal and the high- .

In this configuration, the low band includes at least a part of a band from 699 MHz to 960 MHz, the middle band includes at least a part of a band from 1710 MHz to 2170 MHz, and the high band has a band of 2305 MHz At least a part of the frequency band from 2690 MHz to 2690 MHz.

In the above configuration, at least one of the low band, the middle band, and the high band may include a plurality of bands including a transmission band and a reception band, respectively.

In the above arrangement, the low band, the middle band, and the high band may include a plurality of bands including a transmission band and a reception band, respectively.

In the above configuration, a configuration may be employed in which a plurality of transmission band-pass filters for passing transmission signals of a plurality of bands, respectively, and a plurality of reception band-pass filters for passing reception signals of a plurality of bands, respectively.

In this configuration, the plurality of bands include a first band, a second band, and a third band, wherein a transmission band of the first band and a reception band of the second band are at least partially overlapped, The reception band of the band does not overlap with the transmission band of the first band and the reception band of the third band is provided between the reception filter of the first band and the reception filter of the second band .

The reception signal of the first band and the reception signal of the second band are received at the same time, and the received signals of the first band and the second band are received at the same time, The reception band of the third band overlaps with at least a part of the transmission band of the first band and the reception band of the fourth band does not overlap the transmission band of the first band and the second band, The reception filter of the fourth band may be provided between the reception filter and the reception filter of the third band.

In the above configuration, the reception signals of at least two of the low band, the middle band, and the high band may be simultaneously received and / or the transmission signals of the two bands may be simultaneously transmitted.

The present invention is a module including the front-end circuit.

The present invention is a communication device comprising the front-end circuit.

In the above configuration, it is preferable that the antenna further includes a low band antenna and a high band antenna connected to the first antenna terminal, and a middle band antenna connected to the second antenna terminal, And the antenna for the middle band is provided between the antenna for the middle band and the antenna for the middle band.

A first transmission filter for passing a transmission signal of a first band; a second transmission filter for passing a transmission signal of a second band; a second transmission filter for passing a transmission signal of a second band; A third transmission filter for passing a transmission signal of the third band and a third reception filter for passing the reception signal of the third band, Wherein a transmission band of the first band and a reception band of the second band are at least partially overlapped and a reception band of the third band is not overlapped with the transmission band of the first band and the second band, And the third reception filter is provided between the second reception filters.

In the above arrangement, the output of the first transmission filter and the input of the first reception filter are commonly connected to a first common terminal, and the output of the second transmission filter and the input of the second reception filter are common 2 common terminal.

In the above configuration, a configuration may be employed in which a switch for selecting one of the first common terminal and the second common terminal and connecting the third common terminal to the third common terminal is provided.

The first band is an LTE band 1 and the second band is an LTE band 2 or an LTE band 25 or the first band is an LTE band 2 or an LTE band 25 and the second band is an LTE band 3 or the first band is LTE band 8 and the second band is band 5 or LTE band 26 or the first band is band 5 or LTE band 26 and the second band is LTE band 20 .

A first transmission filter for passing a transmission signal of a first band; a second transmission filter for passing a transmission signal of a second band; a second transmission filter for passing a transmission signal of a second band; A third reception filter for allowing a reception signal of the third band to pass; a third reception filter for passing a reception signal of the third band; And a fourth reception filter for passing the reception signal of the fourth band, wherein the reception signal of the first band and the reception signal of the second band are simultaneously received, The reception band of the third band overlaps with at least a part of the transmission band of the first band and the reception band of the fourth band does not overlap the transmission band of the first band and the second band, A reception filter, And the reception filter of the fourth band is provided between the reception filters of the third band.

Wherein the first band is an LTE band 1, the second band is an LTE band 3, the third band is an LTE band 2 or an LTE band 25, the first band is an LTE band 2 or an LTE band 25, the second band is band 4, the third band is LTE band 3, the first band is LTE band 26, the second band is LTE band 12 or LTE band 17, The LTE band is 20 or the first band is the LTE band 8, the second band is the LTE band 20, and the third band is the LTE band 5 or 26. [

The present invention relates to an electronic device comprising at least three first filters connected between a first common terminal and at least three first terminals and having different passbands from each other and a second common terminal connected between one second common terminal and at least one second terminal At least one second filter connected to the first common terminal and at least three first filters, and a second wiring connected to the second common terminal and the at least one second filter Wherein the first common terminal and the second common terminal are provided on the same side with respect to the at least three first filters and the second common terminal is provided on the same side of the at least one second filter, The common terminal and the second common terminal are provided on opposite sides of the at least three first filters, and the second wiring intersects only with the first wiring at one place.

In the above configuration, the ground pattern may be provided between the first wiring and the second wiring at the intersection of the first wiring and the second wiring.

In the above configuration, the at least three first filters may be provided on both sides of the first wiring.

In the above configuration, the at least one second filter may be configured to have at least three second filters.

In the above arrangement, the first filter may include a first transmission filter and a first reception filter of a first band, a second transmission filter and a second reception filter of a second band, A third transmission filter and a third reception filter of three bands, and a fourth transmission filter and a fourth reception filter of the fourth band.

In the above structure, it is preferable that the substrate has a laminate of a plurality of insulating layers, the at least three first filters and the at least one second filter are mounted on the substrate, and the first wiring and the second wiring The first wiring and the second wiring may be formed on the surface of each of the other insulating layers in the insulating layer.

According to the present invention, cost reduction and miniaturization are possible, and interference between a plurality of bands can be suppressed.

1 is a diagram showing transmission bands and reception bands of respective bands used in Examples 1 to 5. Fig.
2 is a circuit diagram of the front end circuit according to the first embodiment.
3 is a circuit diagram of a front-end circuit according to Comparative Example 1. Fig.
4 is a circuit diagram of a front end circuit according to Comparative Example 2. Fig.
FIG. 5A is a block diagram of a diplexer in Comparative Example 1, and FIG. 5B is a diagram showing frequency characteristics of a diplexer.
FIG. 6A is a block diagram of the diplexer in the first embodiment, and FIG. 6B is a diagram showing the frequency characteristics of the diplexer.
7 is a circuit diagram of the front end circuit according to the second embodiment.
8 is a circuit diagram of a front end circuit according to a first modification of the second embodiment.
9 is a circuit diagram of a front end circuit according to a second modification of the second embodiment.
10 (a) to 10 (d) are circuit diagrams showing another example of the branching circuit in the second modification of the second embodiment.
11 is a circuit diagram of a middle band system circuit in the third embodiment.
12 (a) and 12 (b) are diagrams showing the module according to Comparative Example 3. Fig.
13 is a schematic plan view showing a module according to the third embodiment.
14 is a schematic plan view showing a module according to a modification 1 of the third embodiment.
15 is a schematic plan view showing a module according to a second modification of the third embodiment.
16 is a circuit diagram of a middle band system circuit according to a third modification of the third embodiment.
17 is a schematic plan view showing a module according to a modification 3 of the third embodiment.
18 is a circuit diagram of a low band system circuit according to a fourth modification of the third embodiment.
19 is a schematic plan view showing a module according to Comparative Example 4. Fig.
20 is a schematic plan view showing a module according to a fourth modification of the third embodiment.
Fig. 21 is a schematic plan view showing another module according to Modification 3 of Embodiment 3. Fig.
22 is a plan schematic diagram showing the module according to the fourth embodiment.
23 is a schematic plan view of a module according to Modification 1 of Embodiment 4. Fig.
24 is a schematic plan view showing a module according to a modification 2 of the fourth embodiment.
25 is a schematic plan view showing another module according to the fourth modification of the third embodiment.
26 is a schematic plan view showing a module according to a modification 3 of the fourth embodiment.
FIG. 27A is a block diagram of the vicinity of the antenna of the communication device according to the fifth embodiment, and FIG. 27B is a perspective view of the antenna.
Fig. 28 (a) is a block diagram of the vicinity of the antenna of the communication device according to the first modification of the fifth embodiment, and Fig. 28 (b) is a perspective view of the antenna.
29A is a plan view of the module according to the fourth embodiment, and FIG. 29B is a plan view of the module according to the sixth embodiment.
30 is a sectional view of the module according to the sixth embodiment.
31 (a) and 31 (b) are plan views (1) of respective insulating layers in the sixth embodiment.
Figs. 32 (a) and 32 (b) are plan views (2) of respective insulating layers in Example 6. Fig.
33 is a plan view of the insulating layer 60 in the fourth embodiment.
34 (a) and 34 (b) are plan views of respective insulating layers in Modification 1 of the sixth embodiment.

Hereinafter, embodiments will be described with reference to the drawings. The LTE band used in this embodiment is a frequency band corresponding to the LTE standard (E-UTRA Operating Band).

≪ Example 1 >

Embodiment 1 is an example of a front end circuit that performs so-called carrier aggregation, which simultaneously receives reception signals of a plurality of bands and / or simultaneously transmits transmission signals of a plurality of bands. As the plurality of bands, LTE bands B1, B2 (or B25), B3, B4, B5 (or B26), B7, B8, B12 (or B17), B13, B20 and B30 are used. In addition, " B " is added to the front of the number of the band, and it is distinguished from the reference number.

1 is a diagram showing transmission bands and reception bands of respective bands used in Examples 1 to 5. Fig. As shown in FIG. 1, LTE bands B5, B8, B12, B13, B17, B20, B26 and B29 are low band, LTE bands B1-B4 and B25 are middle band, and LTE bands B7 and B30 are high band to be.

2 is a circuit diagram of a communication device and a front-end circuit according to the first embodiment. The one-dot chain line is a line mainly transmitted by a transmission signal, the dashed line is a line mainly transmitted by a reception signal, and the solid line is a line transmitted by a transmission signal and a reception signal. As shown in Fig. 2, the front end circuit 104 mainly includes a terminal T1 (first antenna terminal), T2 (second antenna terminal), TL (low band terminal), TM (High band terminal), a diplexer 16, a low band system circuit 10L, a middle band system circuit 10M, a high band system circuit 10H and an RFIC (Radio Frequency Integrated Circuit) 48 . The communication apparatus includes a front end circuit 104 and antennas 40LH and 40M.

The terminals T1 and T2 are connected to the antennas 40LH and 40M, respectively. In the terminal TL, a low-band transmission signal and a reception signal are input and output, respectively. In the terminal TM, the transmission signal and the reception signal of the middle band are input and output, respectively. The terminal TH receives and outputs a high-band transmission signal and a reception signal, respectively. The diplexer 16 is connected to the terminals T1, TL and TH. The terminal T2 is connected to the terminal TM. Tuners 38a and 38b are connected between the terminal T1 and the diplexer 16 and between the terminal T2 and the terminal TM, respectively. The tuners 38a and 38b match the impedances when the impedances of the antennas 40LH and 40M are changed, respectively. The tuners 38a and 38b may not be provided. A coupler for feeding back a part of the transmission signal may be provided between the terminal T1 and the diplexer 16 and / or between the terminals T1 and TM.

The diplexer 16 has a low-pass filter connected between the terminals T1 and TL and a high-pass filter connected between the terminals T1 and TH. Thus, the diplexer 16 passes the transmission signal and the reception signal of the low band between the terminal T1 and the terminal TL, and blocks the transmission signal and the reception signal of the middle band and the high band. The diplexer 16 passes the high-band transmission signal and the reception signal between the terminal T1 and the terminal TH, and blocks the transmission signal and the reception signal of the low band and the middle band.

The low band system circuit 10L, the middle band system circuit 10M and the high band system circuit 10H are connected to the terminals TL, TM and TH, respectively. The RFIC 48 is connected to the low band system circuit 10L, the middle band system circuit 10M and the high band system circuit 10H. The RFIC 48 transmits the transmission signal before amplification to the low band system circuit 10L, the middle band system circuit 10M and the high band system circuit 10H. The RFIC 48 has a low noise amplifier and amplifies the received signal received from the low band system circuit 10L, the middle band system circuit 10M and the high band system circuit 10H.

The low band system circuit 10L includes quadruplexers 15h and 15i, a switch 20 and power amplifiers 36b and 36c. The middle band system circuit 10M includes quadruplexers 15c and 15d, switches 21 and 26, and power amplifiers 36d and 36e. The high band system circuit 10H includes a quadruplexer 15e, a switch 29 and a power amplifier 36f.

The quad-plexer 15h includes a transmission filter 12 and a reception filter 14 of LTE bands B5 / B26 and B12. The quad-plexer 15i includes a transmission filter 12 and a reception filter 14 of LTE bands B8 and B20. The quad-plexer 15c includes a transmission filter 12 and a reception filter 14 of LTE bands B2 and B4. The quad-plexer 15d includes a transmission filter 12 and a reception filter 14 of LTE bands B1 and B3. The quad-plexer 15e includes a transmission filter 12 and a reception filter 14 of LTE bands B7 and B30.

The transmission filter 12 is a band-pass filter, which passes a transmission signal in each band and blocks the reception signal. The reception filter 14 is a band-pass filter, passes a reception signal within each band, and blocks the transmission signal. In the LTE bands B5 and B26, the transmission bands and the reception bands overlap each other. As a result, the transmission filter 12 and the reception filter 14 of the LTE bands B5 / B26 can share the LTE bands B5 and B26.

The SP3T (Single Pole 3 Throw) switch 20 is connected between the common terminal of the quad-plexers 15h and 15i and the output of the power amplifier 36c for GSM (registered trademark) (global system for mobile communications) 1, and is connected to the terminal TL. A transmission signal is output from the RFIC 48 to the power amplifiers 36b to 36f. The SP4T (Single Pole 4 Throw) switch 25a outputs the output of the power amplifier 36b to one of the LTE bands B5 / B26, B12, B8 and B20.

The SP3T switch 21 selects one of the common terminal of the quadruplexers 15c and 15d and the output of the power amplifier 36d for GSM (trademark) of high band, and is connected to the terminal TM. The SP4T (Single Pole 4 Throw) switch 26 outputs the output of the power amplifier 36e to one of the transmission filters 12 of the LTE bands B2, B1, B4 and B3. The SPDT switch 29 outputs the output of the power amplifier 36f to one of the transmission filters 12 of the LTE bands B7 and B30.

A comparative example will be described in order to explain the effect of the first embodiment. 3 is a circuit diagram of a front-end circuit according to Comparative Example 1. Fig. As shown in Fig. 3, in the front-end circuit 110, the terminal T1 is connected to the antenna 40LM. The diplexer 16 is connected between the terminal T1 and the terminal TL and between the terminal T1 and the terminal TM. And the terminal T2 is connected to the antenna 40H. Terminal T2 and terminal TH are connected. Duplexers 15f and 15g and an SPDT switch 28 are provided instead of the quadruplexer 15e. The other structures are the same as those of the first embodiment, and a description thereof will be omitted.

4 is a circuit diagram of a front end circuit according to Comparative Example 2. Fig. As shown in Fig. 4, in the front-end circuit 112, the terminal T1 is connected to the antenna 40L and the terminal TL. The terminal T2 is connected to the middle band antenna 40M and the terminal TM. The terminal T3 is connected to the antenna 40H and the terminal TH. A tuner 38 is connected between the antennas 40L, 40M and 40H and the terminals TL, TM and TH, respectively. The other structures are the same as those of Comparative Example 1, and a description thereof will be omitted.

The problem of Comparative Example 1 will be described. FIG. 5A is a block diagram of a diplexer in Comparative Example 1, and FIG. 5B is a diagram showing frequency characteristics of a diplexer. As shown in Fig. 5A, the diplexer 16 includes a low-pass filter LPF 16a and a high-pass filter HPF 16b. The LPF 16a is connected between the terminals T1 and TL. The HPF 16b is connected between the terminals T1 and TM. As described above, in Comparative Example 1, the low band LB and the middle band MB are branched using the diplexer 16. As described above, by using the diplexer 16, it is possible to share the antenna.

As shown in Fig. 5B, the low band LB becomes the pass band of the LPF 16a, and becomes the suppression band of the HPF 16b. The middle band MB becomes the pass band of the HPF 16b and becomes the suppression band of the LPF 16a. However, the suppression characteristics of the HPF 16b in the low band LB and / or the suppression characteristics of the LPF 16a in the middle band MB are not sufficient. As a result, the loss in the low band LB of the LPF 16a and / or the loss in the middle band MB of the HPF 16b becomes large. Therefore, the power of the transmission signal in the terminals TL and TM is increased. This increases the power consumption of the power amplifier. Further, when the power of the transmission signal is large, harmonic signals, intermodulation distortion, and / or intermodulation distortion generated in a power amplifier, a switch, a filter and the like of the low band LB become large. These cause interference of the middle band MB and / or the high band HB.

Also, the loss in the low band LB of the LPF 16a and / or the loss in the middle band MB of the HPF 16b is large. As a result, the levels of the received signals in the terminals TL and TM become small.

FIG. 6A is a block diagram of the diplexer in the first embodiment, and FIG. 6B is a diagram showing the frequency characteristics of the diplexer. As shown in Fig. 6A, the LPF 16a is connected between the terminals T1 and TL. The HPF 16b is connected between the terminals T1 and TH. As described above, in the first embodiment, the low band LB and the high band HB are branched using the diplexer 16.

As shown in Fig. 6 (b), the low band LB becomes the pass band of the LPF 16a and becomes the suppression band of the HPF 16b. The high band HB becomes the pass band of the HPF 16b and becomes the suppression band of the LPF 16a. The frequency interval between the low band LB and the high band HB is wide, so that the suppression characteristics of the HPF 16b in the low band LB and the suppression characteristics of the LPF 16a in the high band HB can be improved. This makes it possible to reduce the loss in the low band LB of the LPF 16a and the loss in the high band HB of the HPF 16b. Therefore, the power of the transmission signal in the terminals TL and TH can be reduced. As a result, the power consumption of the power amplifier is reduced. Further, since the power of the transmission signal is small, harmonic signals, intermodulation distortion, and / or intermodulation distortion generated in the power amplifier, switch and filter of the low band LB are reduced. Therefore, the interference of the middle band MB and / or the high band HB of these signals can be suppressed.

It is also possible to reduce the loss in the low band LB of the LPF 16a and the loss in the high band HB of the HPF 16b. As a result, the level of the received signal at the terminals TL and TH can be increased.

The problem of Comparative Example 2 will be described. In Comparative Example 2, the antenna terminals T1 to T3 and the antennas 40L, 40M, and 40H are provided in the low band LB, the middle band MB, and the high band HB, respectively. In order to increase the isolation between the three antenna terminals T1 to T3 and / or the three antennas 40L, 40M and 40H, the antenna terminals T1 to T3 and / or the arrangement of the three antennas 40L, 40M and 40H . If the arrangement of the antenna terminal and / or the antenna is difficult, a filter is added, and the cost is also increased.

According to the first embodiment, low-band and high-band transmission signals and reception signals are output and input to the terminal T1, respectively. The terminal T 2 is connected to the other antenna, and the transmission signal and the reception signal of the middle band are output and input, respectively. And the diplexer 16 is used as a branching circuit of a low band and a high band.

Thereby, as compared with the case where three antenna terminals are provided as in the second comparative example, the antenna terminals can be reduced, and the RF connectors and the like can be reduced. Therefore, the cost can be reduced and the size can be reduced. In comparison with the case where the low-band and middle-band branching circuits are used and the low-band and middle-band antenna terminals are commonly used as in Comparative Example 1, power consumption is reduced, It is possible to suppress the interference of the harmonic signal, the intermodulation distortion, and / or the intermodulation distortion signal, and the sensitivity of the received signal.

≪ Example 2 >

7 is a circuit diagram of the front end circuit according to the second embodiment. 7, in the front-end circuit 100, the low-band system circuit 10L includes multiplexers 15a and 15b, switches 20, 22-24, and 30, and power amplifiers 36a- 36c. The multiplexer 15a includes a transmission filter 12 and a reception filter 14 of LTE bands B5 / B26, B13 and B29. The multiplexer 15b includes a transmission filter 12 and a reception filter 14 of LTE bands B8, B20 and B12.

The single pole double throw (SPDT) switch 22 connects the output of the power amplifier 36a to one of the transmission filters 12 of the LTE bands B12 and B13. The SPDT switch 23 selects one of the outputs of the reception filters 14 of the LTE bands B12 and B5 / B26 and outputs the selected one to the RFIC 48. [ The SPDT switch 24 selects one of the outputs of the reception filter 14 of the LTE bands B8 and B20 and outputs it to the RFIC 48. [ The SP3T switch 25 outputs the output of the power amplifier 36b to one of the LTE bands B5 / B26, B8 and B20.

The SPDT switch 30 outputs the output of the RFIC 48 to one of the power amplifiers 36b and 36c. The SPDT switch 31 outputs the output of the RFIC 48 to one of the power amplifiers 36d and 36e. The other structures are the same as those of the first embodiment, and a description thereof will be omitted.

8 is a circuit diagram of a front end circuit according to a first modification of the second embodiment. As shown in Fig. 8, in the front end circuit 101, the multiplexers 15a and 15b are replaced by duplexers, and the quadruplexers 15c to 15e are replaced by duplexers. In response to this, a multi-throw RF switch 20a capable of independently turning ON / OFF the SP3T switch 20 is provided with a multi-throw RF switch (multi -throw RF switch 21a. An SPDT switch 28 is provided between the terminal TH and the duplexer of the LTE bands B30 and B7. The other structures are the same as those in Fig. 7 of the second embodiment, and a description thereof will be omitted.

The multiplexers 15a and 15b and the quadruplexers 15c to 15e may be replaced by a duplexer as in the first modification of the second embodiment. Further, a part of the multiplexers 15a and 15b and the quadplexers 15c to 15e may be replaced with a duplexer.

9 is a circuit diagram of a front end circuit according to a second modification of the second embodiment. As shown in Fig. 9, in the front end circuit 102, a branching circuit 42 is provided in place of the diplexer 16. The demultiplexer circuit 42 includes a matching circuit 44 and an LPF 46. The matching circuit 44 is provided between the terminal T1 and the terminals TL and TH. The LPF 46 is provided between the matching circuit 44 and the terminal TL. The branching circuit 42 reduces the impedance in the low band in which the terminal TL is seen from the terminal T1 side and increases the impedance in the high band. On the other hand, the branching circuit 42 reduces the impedance in the high band seen from the terminal T1 side to the terminal TH, and increases the impedance in the low band. As described above, the diplexer may not be a diplexer.

10 (a) to 10 (d) are circuit diagrams showing another example of the branching circuit in the second modification of the second embodiment. As shown in Fig. 10A, the matching circuits 43 and 45 may be separately provided on the terminal TL side and the terminal TH side. The HPF 47 may be provided between the terminal T1 and the terminal TH without providing the LPF 46 as shown in Fig. 10 (b). In this way, either the LPF 46 or the HPF 47 may be provided. Only the matching circuit 44 may be provided without providing the LPF 46 and the HPF 47 as shown in Fig. 10 (c). The matching circuits 43 to 45, the LPF 46, and the HPF 47 need not be provided as shown in Fig. 10 (d). In the case of (d) in FIG. 10, the transmission filter 12 and the reception filter 14 function as a branching circuit.

As in the first and second embodiments and modifications thereof, the branching circuit includes a diplexer 16 having an LPF connected between terminals T1 and TL and an HPF connected between terminals T1 and TH . As a result, the low-band signal and the high-band signal can be further demultiplexed. As in the second modification of the second embodiment, the branching circuit may not include the diplexer.

Embodiments 1 and 2 and its modified examples are bands used for wireless communication such as LTE. The low band includes at least a part of the band from 699 MHz to 960 MHz, and the middle band includes the band from 1710 MHz to 2170 MHz And the high band includes at least a part of the band from 2305 MHz to 2690 MHz as an example. The low band, middle band, and high band may be other than these frequencies.

The low band, the middle band, and the high band all include a plurality of bands including a transmission band and a reception band, respectively. At least one of the low band, the middle band, and the high band may include a plurality of bands including a transmission band and a reception band, respectively. The low band, middle band, and high band may all include only one band.

In the second embodiment and its modifications, the switches 23 and 24 may be replaced by a multiplexer such as a diplexer. Thereby, it is possible to reduce the number of power sources used for the switch and the control signal. Therefore, the front end circuit can be downsized.

≪ Example 3 >

Embodiment 3 is an example of a module including a front end circuit or a part thereof. 11 is a circuit diagram of a middle band system circuit in the third embodiment. As shown in Fig. 11, the circuit of the third embodiment is the same as the middle band system circuit 10M of the first modification of the second embodiment.

12 (a) and 12 (b) are diagrams showing modules relating to Comparative Example 3. Fig. As shown in Figs. 12 (a) and 12 (b), the module includes a substrate 50, a transmission filter 12, and a reception filter 14. The transmission filter 12 and the reception filter 14 are mounted on the substrate 50 or embedded in the substrate 50. The substrate 50 is, for example, a wiring substrate on which resin layers are laminated. The transmission filter 12 and the reception filter 14 are connected via a wiring 52 formed in the substrate 50. B1Rx to B4Rx correspond to the reception filters 14 of the LTE bands B1 to B4 respectively and B1Tx to B4Tx correspond to the transmission filters 12 of the LTE bands B1 to B4, respectively.

As shown in Fig. 1, the transmission band of the LTE band B1 and the reception band of the LTE band B2 are partially overlapped. As shown by the dashed arrow in Fig. 12A, the signal input from the transmission terminal of the LTE band B1 is input to the switch 21a. Since the isolation in the switch 21a is finite, a part of the transmission signal of the LTE band B1 is leaked to the reception filter 14 of the LTE band B2. When the reception filters 14 of the LTE bands B2 and B1 are adjacent to each other, the coupling between the LTE bands B2 and B1 is large. As a result, the signal (part of the transmission signal of the LTE band B1) of the reception filter 14 of the LTE band B2 is output as the reception signal of the LTE band B1. As a result, the receiving sensitivity of the LTE band B1 is lowered.

Similarly, the transmission band of the LTE band B2 and the reception band of the LTE band B3 partially overlap. As shown by the dashed arrow in FIG. 12 (b), the signal input from the transmission terminal of the LTE band B2 is input to the switch 21a. A part of the transmission signal of the LTE band B2 is leaked to the reception filter 14 of the LTE band B3. The signal (a part of the transmission signal of the LTE band B2) of the reception filter 14 of the LTE band B3 is output as the reception signal of the LTE band B2 when the reception filter 14 of the LTE band B3 and B2 is adjacent. As a result, the reception sensitivity of the LTE band B2 is lowered.

13 is a schematic plan view showing a module according to the third embodiment. The transmission filter 12 and the reception filter 14 of the LTE bands B1 to B4 are mounted on the substrate 50 or embedded in the substrate 50. The duplex RF switch 21a is external to the module. The reception filter 14 is arranged in the order of the LTE bands B1, B3, B4 and B2. As described above, the reception filters 14 of the LTE bands B1 and B2 are not adjacent to each other and the reception filters 14 of the LTE bands B2 and B3 are not adjacent to each other. This makes it possible to suppress deterioration in the reception sensitivity of the LTE bands B1 and B2 as shown in Figs. 12 (a) and 12 (b).

14 is a schematic plan view showing a module according to a modification 1 of the third embodiment. As shown in Fig. 14, the switch 21a is mounted on or embedded in the substrate 50. Fig. The other configuration is the same as that of the third embodiment, and a description thereof is omitted.

15 is a schematic plan view showing a module according to a second modification of the third embodiment. As shown in Fig. 15, the switch 26 and the power amplifier 36e are mounted on or embedded in the substrate 50. In Fig. The rest of the configuration is the same as that of the first modification of the third embodiment, and a description thereof is omitted.

14 and 15, at least one of the switches 21a and 26 and the power amplifier 36e may be mounted or incorporated in the substrate 50 in addition to the transmission filter 12 and the reception filter 14. [ In addition, other components may be mounted on or embedded in the substrate 50.

16 is a circuit diagram of a middle band system circuit according to a third modification of the third embodiment. As shown in Fig. 16, the transmission filter 12 and the reception filter 14 of the LTE bands B2 and B4 are included in the quad-plexer 15c. The transmission filter 12 and the reception filter 14 of the LTE bands B1 and B3 are included in the quad-plexer 15d. The RF switch 21a is replaced by the SP3T switch 21. The other configuration is the same as that of the third embodiment, and a description thereof is omitted. Switches with fewer throws, such as SP3T, provide greater isolation between throws than switches with larger throw numbers. Therefore, the variation 3 of the third embodiment can further suppress the interference between the bands.

Even when the transmission filter 12 and the reception filter 14 form a multiplexer such as a quadruplexer as in the third modification of the third embodiment, the reception filter 14 between the LTE bands B1 and B2 is adjacent And the reception filters 14 between the LTE bands B2 and B3 are not adjacent to each other.

17 is a schematic plan view showing a module according to a modification 3 of the third embodiment. The transmission filter 12 and the reception filter 14 of the LTE bands B1 and B3 are mounted on the substrate 50 as a quadruplexer 15d as shown in Fig. The transmission filter 12 and the reception filter 14 of the LTE bands B2 and B4 are mounted on the substrate 50 as a quadruplexer 15c. The quadruplexers 15c and 15d are packaged individually. The rest of the configuration is the same as that of the second modification of the second embodiment, and a description thereof is omitted. Even when the transmission filter 12 and the reception filter 14 are mounted on the substrate 50 as the quadruplexes 15c and 15d, the reception filters 14 with the LTE bands B1 and B2 are not adjacent to each other, And the reception filter 14 of B3 are not adjacent to each other. This can suppress the isolation degradation of the LTE bands B2 and B3. The same is true when the transmission filter 12 and the reception filter 14 are packaged in units of a duplexer or a filter.

18 is a circuit diagram of a low band system circuit according to a fourth modification of the third embodiment. As shown in Fig. 18, the circuit of Modification 4 of Embodiment 3 includes a duplexer of LTE bands B8, B20, B12 and B26 of the low-band system circuit 10L of Modification Example 1 of Embodiment 2. Fig. The RF RF switch 20a having the seventh RF signal of the first modification of the second embodiment is replaced by a RF RF switch 20a having five RF signals. The other configuration is the same as that of the first modification of the second embodiment, and a description thereof is omitted.

19 is a schematic plan view showing a module according to Comparative Example 4. Fig. As shown in Fig. 19, the module includes a substrate 50, a transmission filter 12, and a reception filter 14. The transmission filter 12 and the reception filter 14 are mounted on or embedded in the substrate 50. The substrate 50 is, for example, a wiring substrate on which resin layers are laminated. The transmission filter 12 and the reception filter 14 are connected via a wiring 52 formed in the substrate 50. Transmit filter 12 and receive filter 14 correspond to LTE bands B8, B12, B20 and B26. The other structures are the same as those of Comparative Example 3, and a description thereof will be omitted.

As shown in Fig. 1, the transmission band of the LTE band B26 and the reception band of the LTE band B20 are partially overlapped. The transmission band of the LTE band B8 and the reception band of the LTE band B26 partially overlap. As a result, the signal input from the transmission terminal of the LTE band B26 is input to the switch 20a, as indicated by the dashed arrow in Fig. A part of the transmission signal of the LTE band B 26 leaks to the reception filter 14 of the LTE band B 20. When the LTE band B 26 and the reception filter 14 of the B 20 are adjacent to each other, the signal (part of the transmission signal of the LTE band B 26) of the reception filter 14 of the LTE band B 20 is output as the reception signal of the LTE band B 26. As a result, the reception sensitivity of the LTE band B26 is lowered. Likewise, when the reception filters 14 of the LTE bands B8 and B26 are adjacent to each other, a part of the transmission signals of the LTE band B8 is output as the reception signals of the LTE band B8. As a result, the reception sensitivity of the LTE band B8 is lowered.

20 is a schematic plan view showing a module according to a fourth modification of the third embodiment. As shown in Fig. 20, the transmission filter 12 and the reception filter 14 of the LTE bands B8, B12, B20 and B26 are mounted on or embedded in the substrate 50. Fig. The duplex RF switch 20a is external to the module. The reception filter 14 is arranged in the order of the LTE bands B8, B20, B12 and B26. As described above, the reception filters 14 of the LTE bands B8 and B26 are not adjacent to each other and the reception filters 14 of the LTE bands B20 and B26 are not adjacent to each other. This makes it possible to suppress deterioration of the reception sensitivity of the LTE bands B 26 and B 8 as shown in Fig.

At least one of the switch, the amplifier, and other components may be mounted on or embedded in the substrate 50, in addition to the transmission filter 12 and the reception filter 14. [ The transmission filter 12 and the reception filter 14 may form a multiplexer.

According to the third embodiment and its modifications, at least a part of the transmission band of the first band (for example, the LTE band B1) overlaps with the reception band of the second band (for example, the LTE band B2) The LTE band B4) does not overlap the transmission bands of the first band and the second band. At this time, a reception filter of the third band is provided between the reception filter of the first band and the reception filter of the second band. As a result, it is possible to suppress the transmission signal of the first band from passing through the reception filter of the second band and leaking to the reception filter of the first band. Therefore, deterioration of the reception sensitivity of the first band can be suppressed.

In the module including the transmission filter 12 and the reception filter 14 of the LTE bands B1 to B4, the reception filter 14 is arranged in the order of the LTE bands B1, B3, B4 and B2. This makes it possible to suppress deterioration of the reception sensitivity of the LTE bands B1 and B2. In the module including the transmission filter 12 and the reception filter 14 of the LTE bands B8, B12, B20 and B26, the reception filter 14 is divided into the LTE bands B8, B20, B12 and the LTE band B26 . As a result, deterioration in reception sensitivity of the LTE bands B8 and B26 can be suppressed.

1, the transmission band and the reception band of the LTE band B25 overlap with the transmission band and the reception band of the LTE band B2, respectively. Therefore, the reception filter 14 and the transmission filter 12 of the LTE band B2 of the third embodiment and its modifications 1 to 3 may be the reception filter 14 and the transmission filter 12 of the LTE band B25. The transmission band and the reception band of the LTE band B5 overlap with the transmission band and the reception band of the LTE band B26, respectively. Therefore, the reception filter 14 and the transmission filter 12 of the LTE band B26 of the fourth modification of the third embodiment may be the reception filter 14 and the transmission filter 12 of the LTE band B5. The transmission band and the reception band of the LTE band B17 overlap with the transmission band and the reception band of the LTE band B12, respectively. Therefore, the reception filter 14 and the transmission filter 12 of the LTE band B12 of the fourth modification of the third embodiment may be the reception filter 14 and the transmission filter 12 of the LTE band B17.

The transmission filter 12 and the reception filter 14 of the same band may be arranged side by side and the transmission filter 12 may be arranged in a different order from the reception filter 14 as in the third embodiment and its modification do.

Embodiments 1 and 2 and modifications thereof can be applied to Embodiment 3 and its modifications.

<Example 4>

Embodiment 4 is an example in which carrier aggregation is performed. Fig. 21 is a schematic plan view showing another module according to Modification 3 of Embodiment 3. Fig. As shown in Fig. 21, quad-plexers 15c and 15d are mounted on a substrate 50. Fig. And the reception filters 14 of the LTE bands B3 and B4 are provided adjacent to each other. The SP3T switch 21, the SP4T switch 26, and the power amplifier 36e are not mounted on the substrate 50. The other configuration is the same as that of the modification 3 of the third embodiment, and description thereof is omitted.

LTE bands B2 and B4 are bands received at the same time when carrier aggregation. At this time, leakage of signals from the transmission terminal of the LTE band B2 to the reception terminal of the LTE bands B2 and B4 and leakage of the signals from the transmission terminal of the LTE band B4 to the reception terminal of the LTE bands B4 and B2 are also problematic.

21, the transmission signal input from the transmission terminal of the LTE band B2 reaches the switch 21. [ A part of the transmission signal of the LTE band B2 is leaked to the reception filter 14 of the LTE band B3 in the switch 21 since the transmission band of the LTE band B2 and the reception band of the LTE band B3 partially overlap. When the reception filters 14 of the LTE bands B3 and B4 are adjacent to each other, the coupling between the LTE bands B3 and B4 is large. As a result, the signal (part of the transmission signal of the LTE band B2) of the reception filter 14 of the LTE band B3 is output as the reception signal of the LTE band B4. As a result, the reception sensitivity of the LTE band B4 is lowered.

22 is a plan schematic diagram showing the module according to the fourth embodiment. As shown in Fig. 22, a reception filter 14 is provided so that the reception filters 14 of the LTE bands B1 and B4 are adjacent to each other. The other structures are the same as those in Fig. 21, and a description thereof will be omitted. Even when a part of the transmission signal of the LTE band B2 is leaked to the reception filter 14 of the LTE band B3 as shown by the broken line arrow in FIG. 22, the reception filter 14 of the LTE band B3 and the reception filter 14 of the LTE band B2 and B4 (14). This can prevent a part of the transmission signal of the LTE band B2 from leaking to the reception terminals of the LTE bands B2 and B4. Therefore, deterioration of the reception sensitivity of the LTE bands B2 and B4 can be suppressed.

In addition, LTE bands B1 and B3 are simultaneously received when carrier aggregation is performed. Therefore, it is desirable to suppress the leakage of signals from the transmission terminal of the LTE band B1 to the reception terminal of the LTE bands B1 and B3 and the leakage of the signals from the transmission terminal of the LTE band B3 to the reception terminal of the LTE bands B3 and B1. The transmission band of the LTE band B1 and the reception band of the LTE band B2 are partially overlapped. As a result, a part of the transmission signal of the LTE band B1 is leaked to the reception filter 14 of the LTE band B2 via the switch 21 as indicated by the broken line arrows in the long intervals. However, the reception filter 14 of the LTE band B2 and the reception filter 14 of the LTE bands B3 and B1 are not adjacent to each other. As a result, it is possible to prevent a part of the transmission signal of the LTE band B1 from leaking to the reception terminals of the LTE bands B1 and B3. Therefore, it is possible to suppress deterioration of the reception sensitivity of the LTE bands B1 and B3.

23 is a schematic plan view of a module according to Modification 1 of Embodiment 4. Fig. As shown in Fig. 23, the switch 21 is mounted on or embedded in the substrate 50. Fig. The other configuration is the same as that of the fourth embodiment, and a description thereof will be omitted.

24 is a schematic plan view showing a module according to a modification 2 of the fourth embodiment. As shown in Fig. 24, the switch 26 and the power amplifier 36e are mounted on or embedded in the substrate 50. In Fig. The rest of the configuration is the same as that of the first modification of the fourth embodiment, and a description thereof is omitted.

At least one of the switches 21 and 26 and the power amplifier 36e may be mounted or embedded in the substrate 50 in addition to the transmission filter 12 and the reception filter 14 as shown in Figs. In addition, other components may be mounted on or embedded in the substrate 50.

25 is a schematic plan view showing another module according to the fourth modification of the third embodiment. As shown in Fig. 25, quadruplexers 15h and 15i are mounted on a substrate 50. Fig. The transmission filter 12 and the reception filter 14 of the LTE bands B8 and B20 are included in the quad-plexer 15i. The transmission filter 12 and the reception filter 14 of the LTE bands B12 and B26 are included in the quad-plexer 15h. The other structures are the same as those in Fig. 20, and a description thereof will be omitted.

LTE bands B12 and B26 are received simultaneously when carrier aggregation. Therefore, it is desirable to suppress the leakage of signals from the transmission terminal of the LTE band B12 to the reception terminal of the LTE bands B12 and B26 and the leakage of the signals from the transmission terminal of the LTE band B26 to the reception terminal of the LTE bands B12 and B26. The transmission band of the LTE band B26 and the reception band of the LTE band B20 partially overlap. As a result, a part of the transmission signal of the LTE band B26 leaks to the reception filter 14 of the LTE band B20 through the switch 20, as indicated by the broken line arrow. And the reception filters 14 of the LTE bands B12 and B20 are adjacent to each other. As a result, part of the transmission signal of the LTE band B 26 leaks to the reception terminal of the LTE band B 12. Therefore, the reception sensitivity of the LTE band B12 is lowered.

26 is a schematic plan view showing a module according to a modification 3 of the fourth embodiment. As shown in Fig. 26, a reception filter 14 is provided so that the reception filters 14 of the LTE bands B8 and B12 are adjacent to each other. Other configurations are the same as those in Fig. 25, and a description thereof will be omitted. Even when a part of the transmission signal of the LTE band B 26 leaks to the reception filter 14 of the LTE band B 20 as shown by the broken line arrow in FIG. 26, the reception filter 14 of the LTE band B 20 and the reception filter 14 of the LTE band B 12 and B 26 (14). This makes it possible to prevent a part of the transmission signal of the LTE band B26 from leaking to the reception terminals of the LTE bands B12 and B26. Therefore, deterioration of the reception sensitivity of the LTE bands B12 and B26 can be suppressed.

According to the fourth embodiment and its modifications, the reception signal of the first band (for example, the LTE band B1) and the reception signal of the second band (for example, the LTE band B3) are received at the same time. The reception band of the third band (for example, LTE band B2) overlaps at least a part of the transmission band of the first band. The reception band of the fourth band (for example, the LTE band B4) does not overlap the transmission band of the first band. At this time, a reception filter of the fourth band is provided between the reception filter of the first band and the second band and the reception filter of the third band. As a result, it is possible to prevent the transmission signal of the first band from passing through the reception filter of the third band and leaking to the reception filters of the first band and the second band. Therefore, it is possible to suppress deterioration of the reception sensitivity of the first band and the second band.

A part of the transmission signal of the second band leaks to the reception filter 14 of the fourth band and leaks from the reception filter 14 of the fourth band to the reception filter 14 of the first or second band It becomes a task. Therefore, it is preferable that the reception band of the fourth band does not overlap the transmission band of the second band.

In the module including the transmission filter 12 and the reception filter 14 of the LTE bands B1 to B4 so as to suppress the leakage of signals between different bands, the reception filter 14 is divided into the LTE bands B3, B1, B4, B2 in that order. In the module including the transmission filter 12 and the reception filter 14 of the LTE bands B8, B12, B20 and B26, the reception filter 14 is arranged in the order of the LTE bands B20, B8, B12 and the LTE bands B26 .

1, the transmission band and the reception band of the LTE band B25 overlap with the transmission band and the reception band of the LTE band B2, respectively. Therefore, the reception filter 14 and the transmission filter 12 of the LTE band B2 in the fourth embodiment and its modification may be the reception filter 14 and the transmission filter 12 of the LTE band B25. The transmission band and the reception band of the LTE band B5 overlap with the transmission band and the reception band of the LTE band B26, respectively. Therefore, the reception filter 14 and the transmission filter 12 of the LTE band B26 of the fourth embodiment and its modification may be the reception filter 14 and the transmission filter 12 of the LTE band B5. The transmission band and the reception band of the LTE band B17 overlap with the transmission band and the reception band of the LTE band B12, respectively. Therefore, the reception filter 14 and the transmission filter 12 of the LTE band B12 in the fourth embodiment and its modification may be the reception filter 14 and the transmission filter 12 of the LTE band B17.

Although the transmission filter 12 and the reception filter 14 are included in the quadruplexer in the fourth and the fourth modifications, the transmission filter 12 and the reception filter 14 are separately provided on the substrate 50 ). Further, a switch, a power amplifier, or the like may be mounted on the substrate 50.

&Lt; Example 5 >

FIG. 27A is a block diagram of the periphery of the antenna of the communication device according to the fifth embodiment, and FIG. 27B is a perspective view of the antenna. As shown in Fig. 27 (a), the terminal T1 is connected to the low band antenna 40L and the high band antenna 40H. And the terminal T2 is connected to the middle band antenna 40M.

As shown in Fig. 27 (b), a metal film 56 is formed on the dielectric 54. Fig. The metal film includes the feed terminals 50LH and 50M, the ground terminals 52LH and 52M, the low band antenna 40L, the high band antenna 40H and the middle band antenna 40M. The antennas 40L, 40H, and 40M are antenna copiers. The low band antenna 40L and the high band antenna 40H are connected on the dielectric 54. [ The feed terminal 50LH and the ground terminal 52LH are connected to the portions where the low band antenna 40L and the high band antenna 40H are connected. The middle band antenna 40M is electrically separated from the low band antenna 40L and the high band antenna 40H. The feed terminal 50M and the ground terminal 52M are connected to the middle band antenna 40M. Other configurations are the same as those of the first embodiment, and a description thereof will be omitted.

According to the fifth embodiment, the low-band antenna 40L and the high-band antenna 40H share the power supply terminal 50LH and the ground terminal 52LH. Thereby, miniaturization and cost reduction are possible.

Fig. 28 (a) is a block diagram of the vicinity of the antenna of the communication device according to the first modification of the fifth embodiment, and Fig. 28 (b) is a perspective view of the antenna. As shown in Figs. 28 (a) and 28 (b), the low band antenna 40L is provided between the high band antenna 40H and the middle band antenna 40M. The other configuration is the same as that of the fifth embodiment, and a description thereof will be omitted.

When the high band antenna 40H is provided between the low band antenna 40L and the middle band antenna 40M as in the fifth embodiment, the high band antenna 40H and the middle band antenna 40M Isolation is deteriorated.

In Modification 1 of Embodiment 5, the low band antenna 40L is provided between the high band antenna 40H and the middle band antenna 40M. As a result, the isolation between the high band antenna 40H and the middle band antenna 40M can be improved. The low band antenna 40L and the middle band antenna 40M are adjacent to each other. However, as shown in FIG. 1, the frequency interval between the low band and the middle band is wider than the frequency interval between the middle band and the high band. As a result, the isolation between the low band antenna 40L and the middle band antenna 40M does not deteriorate much. In addition, since the high-band and low-band power supply terminals can be commonly used, cost reduction and miniaturization are possible.

Embodiment 5 and its modifications can be applied to Embodiments 1 to 4 and its modifications.

&Lt; Example 6 >

Embodiment 6 is an example of a module having a plurality of common terminals as in Embodiment 3, Embodiment 4, and its modification. FIG. 29A is a plan view of the module according to the fourth embodiment, and FIG. 29B is a plan view of the module according to the sixth embodiment. As shown in Fig. 29A, in the module shown in Fig. 22 of Embodiment 4, the quad-plexer 15d includes a reception filter 14a and a transmission filter 12a (first filter) And the quad-plexer 15c includes a reception filter 14b and a transmission filter 12b (second filter). The reception filter 14a is connected between the common terminal Ant1 (first common terminal) and the reception terminal Rx (first terminal). The transmission filter 12a is connected between the common terminal Ant1 and the transmission terminal Tx (second terminal). The reception filter 14b is connected between the common terminal Ant2 (second common terminal) and the reception terminal Rx. The transmission filter 12b is connected between the common terminal Ant2 and the transmission terminal Tx.

The wiring L1 connects the reception filter 14a and the transmission filter 12a in common to the common terminal Ant1. The wiring L2 connects the reception filter 14b and the transmission filter 12b in common to the common terminal Ant2. The wirings L1 and L2 are formed in the substrate 50. [

The wiring L1 includes a wiring L11 for connecting the reception filter 14a of the LTE band B3 and the transmission filter 12a and a wiring L12 for connecting the reception filter 14a of the LTE band B1 and the transmission filter 12a. As a result, the wiring L2 intersects with the two wirings L11 and L12 of the wiring L1 at the intersection. At the intersection 78 between the lines L1 and L2, a high-frequency signal is reflected. As a result, high frequency characteristics are deteriorated.

29B, in the sixth embodiment, in the quad-plexer 15d, the reception filter 14a and the transmission filter 12a are connected by one wiring L13 of the wiring L1 have. The other configuration is the same as that of FIG. 29 (a) of the fourth embodiment, and a description thereof is omitted. Thereby, there is one intersection point 78 where the lines L1 and L2 intersect. Thus, deterioration of the high-frequency characteristics can be suppressed.

Next, a wiring example of the sixth embodiment will be described. 30 is a sectional view of the module according to the sixth embodiment. As shown in Fig. 30, the substrate 50 includes a plurality of insulating layers 60 to 62 which are laminated. The insulating layers 60 to 62 are, for example, resin layers. A metal layer 63 is formed on the upper surface of the insulating layers 60 to 62 and on the lower surface of the insulating layer 62. The metal layer 63 is, for example, a copper layer or a gold layer. The wiring 64, the pad 66 and the foot pad 67 are formed by the metal layer 63. And vias 65 penetrating the insulating layers 60 to 62 are formed, respectively. The via 65 is filled with a metal such as copper. The transmission filter 12 and the reception filter 14 are mounted on the pad 66 via the solder 68. [ The transmission filter 12 and the reception filter 14 are chips or packages in which the filter is formed.

31 (a) to 32 (b) are plan views of respective insulating layers in Example 6. Fig. Figs. 31A to 32A are plan views of the upper surfaces of the insulating layers 60 to 62, respectively, and Fig. 32B is a view of the lower surface of the insulating layer 62 seen from above. In Fig. 31 (a), the filters 12a, 12b, 14a and 14b are shown by broken lines.

31A, a metal layer 63 is formed on the upper surface of the insulating layer 60, and a via 65 penetrating the insulating layer 60 is formed. The receiving filter 14a and the transmitting filter 12a in the quadruplexer 15d and the receiving filter 14b and the transmitting filter 12b in the quadruplexer 15c are mounted on the insulating layer 60. [ The metal layer 63 includes a wiring 64 and a pad 66. The wiring 64 includes wirings L1 and L2 and a ground pattern Gnd and the like, and the pad 66 includes a receiving pad Prx, a transmitting pad Ptx, and a common pad Pant.

The reception filters 14a and 14b are connected to the reception pad Prx and the common pad Pant by the solder 68. [ Transmission filters 12a and 12b are connected by solder 68 to transmission pad Ptx and common pad Pant. The grounding of each of the filters 12a, 12b, 14a, and 14b is connected to the region 69 in the grounding pattern Gnd by the solder 68. The wiring L1 commonly connects the common pad Pant to which the receiving filter 14a and the transmitting filter 12a are connected. The wiring L2 commonly connects the common pad Pant to which the reception filter 14b and the transmission filter 12b are connected. The line L2 is not formed at the crossing point 78 where the lines L1 and L2 intersect. The ground pattern Gnd is formed so as to surround the wiring 64 and the pad 66. A via 65 connected to the wiring 64 is formed through the insulating layer 60. [

As shown in FIG. 31 (b), a metal layer 63 is formed on the upper surface of the insulating layer 61. The metal layer 63 includes the wiring 64. The wiring 64 includes a part of the wiring L2 in the intersection point 78 and the grounding pattern Gnd. And a via 65 connected to the wiring 64 is formed through the insulating layer 61. [ A metal layer 63 is formed on the upper surface of the insulating layer 62 as shown in Fig. 32 (a). A via 65 connected to the wiring 64 is formed through the insulating layer 62. [

A metal layer 63 is formed on the lower surface of the insulating layer 62, as shown in Fig. 32 (b). The metal layer 63 includes a foot pad 67. The foot pad 67 includes a receiving foot pad Frx, a transmitting foot pad Ftx, common foot pads Fant1, Fant2 and a grand foot pad Fgnd. The reception foot pad Frx, the transmission foot pad Ftx, and the common foot pads Fant1 and Fant2 correspond to the reception terminal Rx, the transmission terminal Tx, the common terminals Ant1 and Ant2 in FIG. 29 (b), respectively. A via 65 connected to the foot pad 67 is formed through the insulating layer 62.

As shown in Figs. 31A to 32B, the wiring L1 is electrically connected to the common foot pad Fant1 via the wiring 64 of the insulating layers 60 to 62, the via 65, and the like . The wiring L2 is electrically connected to the common foot pad Fant2 through the wiring 64 of the insulating layers 60 to 62, the via 65, and the like. The reception pad Prx and the transmission pad Ptx are electrically connected to the reception foot pad Frx and the transmission foot pad Ftx through the wiring 64 and the via 65, respectively. The ground pattern Gnd and the ground foot pad Fgnd formed on the upper surfaces of the insulating layers 60 to 62 are electrically connected through the vias 65. In FIGS. 31 (a) to 32 (b) The illustration of the via 65 is omitted.

33 is a plan view of the insulating layer 60 in the fourth embodiment. As shown in Fig. 33, in the fourth embodiment, the wirings L1 and L2 intersect at two intersection points 78. Fig. The other configurations are the same as those in Figs. 30 to 32 (b), and a description thereof will be omitted.

29B to 32B, the reception filter 14a and the transmission filter 12a have different passbands and the reception filter 14b and the transmission filter 12b ) Have different passbands. That is, the reception filter 14a and the transmission filter 12a do not overlap with each other, and the reception filter 14b and the transmission filter 12b do not overlap with each other. The common terminals Ant1 and Ant2 are provided on the same side with respect to the reception filter 14a and the transmission filter 12a. The reception filter 14b and the transmission filter 12b and the common terminals Ant1 and Ant2 are provided on the side opposite to the reception filter 14a and the transmission filter 12a. In this arrangement, the wiring L2 intersects only the wiring L1 at one place. Thus, as in the case of the embodiment 4 shown in Fig. 29 (a) and Fig. 33, the high frequency characteristics can be improved as compared with the case where the wiring L2 crosses the wiring L1 at a plurality of points.

In the sixth embodiment, four filters are connected to the wiring L1 and the wiring L2, respectively. The wiring L1 may be formed by connecting at least three first filters to the common terminal Ant1. The wiring L2 may be connected to at least one second filter to the common terminal Ant2. When there are at least three reception filters 14a and 12a, there are two or more intersections 78 between the wiring L1 and the wiring L2, and deterioration of high-frequency characteristics may occur. In the sixth embodiment, deterioration of the high frequency characteristic can be suppressed by setting the intersection point 78 at one place.

The reception filter 14a and the transmission filter 12a are provided on both sides of the wiring L1. In this case, the number of the crossing points 78 is likely to be plural, and high-frequency characteristics may deteriorate. In the sixth embodiment, deterioration of the high frequency characteristic can be suppressed by setting the intersection point 78 at one place. The reception filter 14a and the transmission filter 12a are provided on both sides of the wiring L1 so that the ground pattern Gnd and the ground via connected to the reception filter 14a and the transmission filter 12a are connected to the reception filter 14a It may be separated by the transmission filter 12a. As a result, the impedance shared by the reception filter 14a and the transmission filter 12a is reduced, so interference between the reception signal and the transmission signal can be suppressed.

Further, the wiring L2 is connected to the common terminal Ant2 with at least three second filters. In this case, even if the second filter is disposed on the side of the common terminals Ant1 and Ant2 from the first filter, the number of the crossing points 78 tends to become plural, and deterioration of high-frequency characteristics may occur. In the sixth embodiment, deterioration of the high frequency characteristic can be suppressed by setting the intersection point 78 at one place.

In the sixth embodiment, the first filter includes the reception filter 14a and the transmission filter 12a, and the second filter includes the reception filter 14b and the transmission filter 12b. The first filter may include only one of the receive filter and the transmit filter, and the second filter may include only one of the receive filter and the transmit filter.

As in Embodiment 6, the first filter includes a transmission filter 12a (first transmission filter) and a reception filter 14a (first reception filter) of the LTE band B3 (first band) Band) transmission filter 12a (second transmission filter) and a reception filter 14a (second reception filter). The second filter includes a transmission filter 12b (third transmission filter) and a reception filter 14b (third reception filter) of the LTE band B4 (third band) and a transmission filter 12b (fourth transmission filter) and a reception filter 14b (fourth reception filter). As described above, when the quadruplexes 15d and 15c of different bands are mounted on the substrate 50, the wiring becomes complicated and high-frequency characteristics are liable to deteriorate. The deterioration of the high frequency characteristic can be suppressed by setting the intersection point 78 at one place. LTE bands B3, B1, B4 and B2 have been described as an example, but they may be different bands.

In the intersection portion 78, the wiring L1 and the wiring L2 are formed on the surfaces of the insulating layers 60 and 61, respectively, of the insulating layers 60 to 62. [ Thus, the lines L1 and L2 can be simply crossed. However, the interval between the lines L1 and L2 in the intersection portion 78 becomes small, and the high-frequency signal is liable to interfere with each other. Therefore, deterioration of the high-frequency characteristic can be suppressed by setting the intersection point 78 at one place.

Figs. 34 (a) and 34 (b) are plan views of respective insulating layers in Modification 1 of Example 6. Fig. 34 (a) to 34 (b) are plan views of the insulating layers 61 and 62, respectively. The upper surface of the insulating layer 60 and the lower surface of the insulating layer 62 are the same as those shown in Figs. 31 (a) and 32 (b) of the sixth embodiment.

As shown in Fig. 34 (a), the wiring L2 is not formed at the intersection portion 78 of the insulating layer 61. [ A ground pattern Gnd is formed at the intersection point 78. As shown in Fig. 34 (b), a wiring L2 including an intersection point 78 is formed. The other configuration is the same as that of the sixth embodiment, and a description thereof will be omitted.

According to the first modification of the sixth embodiment, the ground pattern Gnd is provided between the wiring L1 and the wiring L2 of the intersection point 78 where the wiring L1 and L2 intersect. Thereby, the interference of the high-frequency signal at the intersection point 78 can be suppressed, and the high-frequency characteristic can be improved. In the intersection portion 78, a plurality of insulating layers may be formed between the wirings L1 and L2. In the intersection portion 78, a plurality of ground patterns Gnd may be provided between the lines L1 and L2.

The module according to the sixth embodiment and its modifications may be applied to the first to fifth embodiments and modifications thereof.

Although the embodiments of the present invention have been described in detail, the present invention is not limited to these specific embodiments, but various modifications and changes may be made within the scope of the present invention described in the claims.

10L: Low band system circuit
10M: middle band system circuit
10H: High band system circuit
12: Transmission filter
14: Receive filter
16: diplexer
40LH, 40M: Antenna
42: Dispersion circuit
50: substrate
61 to 63: insulating layer
63: metal layer
64: Wiring
65: Via
66: Pad
67: Footpad
78: Crossing point

Claims (23)

A first antenna terminal which is connected to the antenna and to which a transmission signal and a reception signal of a low band and a high band having a higher frequency than the low band are outputted and inputted,
A second antenna terminal connected to the antenna and different from the first antenna terminal and having a higher frequency than the low band and a lower frequency than the high band,
A low band terminal through which the transmission signal and the reception signal of the low band are input and output,
A middle band terminal through which the transmission signal and the reception signal of the middle band are input and output,
A high band terminal through which the transmission signal and the reception signal of the high band are input and output respectively,
Band signal and a high-band transmission signal and a reception signal between the first antenna terminal and the low-band terminal, A demultiplexer circuit for passing the transmission signal and the reception signal of the high band between the band terminals and for interrupting the transmission signal and the reception signal of the low band and the middle band,
And an output terminal connected to the output terminal. The method according to claim 1,
Wherein the branching circuit comprises a low pass filter connected between the first antenna terminal and the low band terminal and a high pass filter connected between the first antenna terminal and the high band terminal, Circuit. 3. The method according to claim 1 or 2,
The low band includes at least a part of the band from 699 MHz to 960 MHz,
The middle band includes at least a part of the band from 1710 MHz to 2170 MHz,
Wherein the high band includes at least a part of a band from 2305 MHz to 2690 MHz. 3. The method according to claim 1 or 2,
Wherein at least one of the low band, the middle band, and the high band includes a plurality of bands including a transmission band and a reception band, respectively. 3. The method according to claim 1 or 2,
Wherein the low band, the middle band, and the high band each include a plurality of bands including a transmission band and a reception band. 5. The method of claim 4,
A plurality of transmission band-pass filters for respectively passing transmission signals of a plurality of bands,
A plurality of reception band-pass filters
And an output terminal connected to the output terminal. The method according to claim 6,
Wherein the plurality of bands includes a first band, a second band, and a third band, wherein a transmission band of the first band and a reception band of the second band are at least partially overlapped, The transmission band of the first band and the transmission band of the second band do not overlap,
Wherein the reception filter of the third band is provided between the reception filter of the first band and the reception filter of the second band. The method according to claim 6,
The plurality of bands includes a first band, a second band, a third band, and a fourth band,
The reception signal of the first band and the reception signal of the second band are simultaneously received,
The reception band of the third band overlaps with at least a part of the transmission band of the first band,
The reception band of the fourth band does not overlap the transmission band of the first band and the second band,
Wherein the reception filter of the fourth band is provided between the reception filter of the second band and the reception filter of the third band. 3. The method according to claim 1 or 2,
Wherein the reception signals of at least two of the low band, the middle band and the high band are simultaneously received and / or the transmission signals of the two bands are simultaneously transmitted. A module comprising the front end circuit according to claim 1 or 2. A communication device comprising the front end circuit according to any one of claims 1 to 3. 12. The method of claim 11,
A low band antenna and a high band antenna connected to the first antenna terminal,
The antenna for middle band connected to the second antenna terminal
And,
Wherein the low band antenna is provided between the high band antenna and the middle band antenna. A first transmission filter for passing a transmission signal of the first band,
A first reception filter for passing a reception signal of the first band,
A second transmission filter for transmitting a transmission signal of the second band,
A second reception filter for passing a reception signal of the second band,
A third transmission filter for passing a transmission signal of the third band,
A third reception filter for passing a reception signal of the third band,
And,
Wherein a transmission band of the first band and a reception band of the second band overlap at least partially and a reception band of the third band does not overlap a transmission band of the first band and the second band,
And the third reception filter is provided between the first reception filter and the second reception filter. 14. The method of claim 13,
Wherein an output of the first transmission filter and an input of the first reception filter are commonly connected to a first common terminal,
Wherein an output of the second transmit filter and an input of the second receive filter are commonly connected to a second common terminal. 15. The method of claim 14,
And a switch for selecting one of the first common terminal and the second common terminal and connecting the selected one to the third common terminal. A first transmission filter for passing a transmission signal of the first band,
A first reception filter for passing a reception signal of the first band,
A second transmission filter for transmitting a transmission signal of the second band,
A second reception filter for passing a reception signal of the second band,
A third transmission filter for passing a transmission signal of the third band,
A third reception filter for passing a reception signal of the third band,
A fourth transmission filter for passing the transmission signal of the fourth band,
A fourth reception filter for passing a reception signal of the fourth band,
And,
The reception signal of the first band and the reception signal of the second band are simultaneously received,
The reception band of the third band overlaps with at least a part of the transmission band of the first band,
The reception band of the fourth band does not overlap the transmission band of the first band and the second band,
And a reception filter of the fourth band is provided between the reception filter of the second band and the reception filter of the third band. 17. The method of claim 16,
The first band is an LTE band 1, the second band is an LTE band 3, the third band is an LTE band 2 or an LTE band 25,
Wherein the first band is an LTE band 2 or an LTE band 25, the second band is a band 4, the third band is an LTE band 3,
The first band is an LTE band 26 and the second band is an LTE band 12 or an LTE band 17 and the third band is an LTE band 20,
Wherein the first band is an LTE band 8, the second band is an LTE band 20, and the third band is an LTE band 5 or 26. At least three first filters each connected between one first common terminal and at least three first terminals and having different passbands from each other,
At least one second filter connected between one second common terminal and at least one second terminal,
A first wiring connecting the one first common terminal and the at least three first filters,
And a second wiring connecting the one second common terminal and the at least one second filter
And,
The first common terminal and the second common terminal are provided on the same side with respect to the at least three first filters,
The at least one second filter and the first common terminal and the second common terminal are provided on the opposite sides of the at least three first filters,
And the second wiring crosses the first wiring only at one place. 19. The method of claim 18,
And a ground pattern provided between the first wiring and the second wiring at a portion where the first wiring and the second wiring cross each other. 20. The method according to claim 18 or 19,
And the at least three first filters are provided on both sides of the first wiring. 20. The method according to claim 18 or 19,
Wherein the at least one second filter has at least three second filters. 20. The method according to claim 18 or 19,
Wherein the first filter includes a first transmit filter and a first receive filter of a first band and a second transmit filter and a second receive filter of a second band,
Wherein the second filter comprises a third transmit filter and a third receive filter of the third band and a fourth transmit filter and a fourth receive filter of the fourth band. 20. The method according to claim 18 or 19,
And a substrate on which a plurality of insulating layers are stacked,
Wherein the at least three first filters and the at least one second filter are mounted on the substrate,
Wherein the first wiring and the second wiring are formed on the surface of each of the other insulating layers in the insulating layer in a portion where the first wiring and the second wiring cross each other.

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