KR20160122340A - . method for manufacturing flexable led - Google Patents
. method for manufacturing flexable led Download PDFInfo
- Publication number
- KR20160122340A KR20160122340A KR1020150051985A KR20150051985A KR20160122340A KR 20160122340 A KR20160122340 A KR 20160122340A KR 1020150051985 A KR1020150051985 A KR 1020150051985A KR 20150051985 A KR20150051985 A KR 20150051985A KR 20160122340 A KR20160122340 A KR 20160122340A
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- South Korea
- Prior art keywords
- gallium nitride
- thin film
- nitride thin
- layer
- junction
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title abstract description 20
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 84
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 13
- 239000010980 sapphire Substances 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 238000000206 photolithography Methods 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims description 42
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
Description
The present invention relates to a method of fabricating a flexible gallium nitride light emitting diode, and more particularly, to a flexible gallium nitride light emitting diode including a flexible metal substrate having excellent handling characteristics, wherein a laser beam is irradiated through a transparent sapphire substrate, To a method of manufacturing a flexible gallium nitride light emitting diode.
In recent years, studies for manufacturing an optical device element such as a light emitting diode using a flexible substrate have been actively conducted. Such a flexible optical device device manufacturing method manufactures devices on a substrate and separates the device from the substrate by a wet etching process. However, it takes a long time to chemically separate or remove the sapphire.
SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a flexible metal gallium nitride semiconductor light emitting device capable of easily separating a gallium nitride thin film from a sapphire substrate by irradiating a laser beam through a transparent sapphire substrate, And a method of manufacturing a diode.
In order to accomplish the above object, a method of manufacturing a flexible gallium nitride light emitting diode according to the present invention includes the steps of: (a) depositing a p-type gallium nitride thin film layer and an n-type gallium nitride thin film layer on a sapphire layer; (b) forming a lower electrode on the p-type gallium nitride thin film layer and plating a copper plate on the lower electrode; (c) separating the pn-junction gallium nitride thin film from the sapphire layer by a laser lift-off method; (d) fabricating a trench etch pattern on the separated pn junction gallium nitride thin film using a photoresist and a trench etch mask; (e) trenching the separated pn junction gallium nitride thin film with the trench etch pattern; (f) depositing an upper electrode and an upper electrode pattern on the separated pn-junction gallium nitride thin film using a photoresist and a photolithography process; And (g) removing the photoresist from the gallium nitride light emitting diode fabricated with the separated pn junction gallium nitride thin film.
The method of manufacturing a flexible gallium nitride light emitting diode according to the present invention is characterized in that it is made of a gallium nitride compound semiconductor having a wide band gap and thus has high energy conversion efficiency, long life, high light directivity, low voltage driving, Since it does not require a complicated driving circuit and is resistant to impact and vibration, it can be applied to various types of high-quality lighting systems. In the near future, solid-state lighting that can replace conventional light sources such as incandescent lamps, fluorescent lamps, ) Can be used as a light source.
The method of manufacturing a flexible gallium nitride light emitting diode according to the present invention is not only superior in thermal stability but also capable of emitting high output light even at low power consumption in order to replace a conventional mercury vapor lamp or fluorescent lamp as a white light source, In particular, when the recombination rate generated between gallium nitride pn junctions is increased, the efficiency of light output can be increased, and an energy band bending phenomenon through bending can be utilized to increase the recombination rate.
FIG. 1 is a perspective view of a light emitting diode manufactured by the method of manufacturing a flexible gallium nitride light emitting diode according to the present invention,
2 is a process flow diagram of a method for manufacturing flexible gallium nitride according to the present invention,
3 is a process flow diagram of a method for fabricating a flexible gallium nitride light emitting diode according to the present invention,
4 is a conceptual diagram illustrating the principle of a flexible gallium nitride light emitting diode manufactured by the method of manufacturing a flexible gallium nitride light emitting diode according to the present invention,
FIG. 5 is a view for explaining driving results of a flexible gallium nitride light emitting diode manufactured by the method of manufacturing a flexible gallium nitride light emitting diode according to the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms and words used in the present specification and claims should not be construed to be limited to ordinary or dictionary meanings, and the inventor should properly interpret the concept of the term to describe its own invention in the best way. The present invention should be construed in accordance with the meaning and concept consistent with the technical idea of the present invention.
Therefore, the embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, It is to be understood that equivalents and modifications are possible.
1 is a perspective view of a light emitting diode manufactured by the method of manufacturing a flexible gallium nitride light emitting diode according to the present invention.
1 and 2, the flexible gallium nitride light emitting diode according to the present invention includes a p-type gallium nitride
The p-type gallium nitride
The n-type gallium nitride
The
The
Finally, the
Hereinafter, a method of manufacturing the flexible gallium nitride light emitting diode according to the present invention having the above-described structure will be described with reference to Figs. 2 and 3. Fig.
For reference, FIG. 2 is a process chart of a method of manufacturing flexible gallium nitride according to the present invention, and FIG. 3 is a process diagram of a method of manufacturing a flexible gallium nitride light emitting diode according to the present invention.
The p-type gallium nitride
At this time, the p-type gallium nitride
A step of forming the
The
A step of separating the p-n junction gallium nitride thin film from the sapphire layer through a laser lift-off process is performed (S400).
At this time, laser lift-off is preferably performed using a Lambda Physik Lextra 200 KrF pulsed excimer laser to remove the sapphire layer of the gallium nitride light emitting diode device having the copper plate formed thereon.
A step of fabricating a trench etching pattern using the photoresist and the trench etching mask is performed on the separated p-n junction gallium nitride thin film (S500).
And performing trench etching on the separated p-n junction gallium nitride thin film according to the trench etching pattern (S600).
The step of attaching the
In addition, the
Thereafter, the photolithography process is performed to remove the photoresist from the gallium nitride light emitting diode fabricated with the separated p-n junction gallium nitride thin film (S800), thereby fabricating a final flexible gallium nitride light emitting diode.
In the following, the movement of charges and electrons according to strain will be described as a conceptual diagram explaining the principle of the flexible gallium nitride light emitting diode manufactured by the above-described manufacturing method.
In the flexible gallium nitride light emitting diode, when a strain due to an external force is applied, a piezoelectric charge is accumulated between the p-n junction by the strain, and the energy band reacts with charges in the depletion region.
In this case, as shown in FIG. 4A, in the case of concave bending, charge and hole accumulation occurs due to the formation of a deep energy band shape, and the recombination rate of charge and hole increases, thereby improving output current and electroluminescence efficiency .
Also, as shown in FIG. 4A, in the case of convex bending, the accumulation of charge and holes is depleted due to the formation of a hill-shaped energy band shape, and the recombination rate of charge and holes is lowered so that the output current and the electroluminescence efficiency Lower.
Hereinafter, with reference to FIG. 5, the results of driving according to the strain of the actual flexible gallium nitride light emitting diode according to the present invention including the above-described configuration will be described.
As shown in FIG. 5, the flexible gallium nitride light emitting diode according to the present invention can change the output current and the electroluminescence efficiency to a bending strain. At this time, concave bending increases the output current of 9.1% and the electroluminescence efficiency of 9.6%.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It is to be understood that various modifications and changes may be made without departing from the scope of the appended claims.
100: p-type gallium nitride thin film layer
200: n- type gallium nitride thin film layer
300: upper electrode
400: lower electrode
500: copper plate
600: upper electrode pattern
Claims (7)
(b) forming a lower electrode (400) on the p-type gallium nitride thin film layer (100) and plating the lower electrode (400) with a copper plate (500);
(c) separating the pn-junction gallium nitride thin film from the sapphire layer by a laser lift-off method;
(d) fabricating a trench etch pattern on the separated pn junction gallium nitride thin film using a photoresist and a trench etch mask;
(e) trenching the separated pn junction gallium nitride thin film with the trench etch pattern;
(f) attaching the upper electrode 300 and the upper electrode pattern 600 to the separated pn-junction gallium nitride thin film by using a photoresist and a photolithography process, and
(g) removing the photoresist from the gallium nitride light emitting diode fabricated with the separated pn junction gallium nitride thin film.
In the step (a)
The metal-organic chemical vapor deposition (MOCVD) method is used for the deposition of the p-type gallium nitride thin film layer 100 and the n-type gallium nitride thin film layer 200, and Cp 2 Mg and SiH 4 are used, Type and n-type doping are controlled.
In the step (a)
Wherein the p-type gallium nitride thin film layer (100) has a thickness of 200 nm to 500 nm, and the Mg doping concentration is 150 sccm to 1200 sccm.
In the step (a)
Wherein the n-type gallium nitride thin film is 200 nm to 500 nm thick.
In the step (b)
Wherein the lower electrode 400 is composed of one layer or a plurality of layers including Ni and Au which are in ohmic contact with the p-type gallium nitride thin film 100. The flexible gallium nitride light- Gt;
In the step (b)
Wherein the copper plate (500) is formed by an electroplating method and is deposited to a thickness of 20 占 퐉 to 200 占 퐉.
In the step (f)
The upper electrode 300 and the upper electrode pattern 600 may be formed of one layer or a plurality of layers including Ti and Au forming ohmic contact with the n-type gallium nitride thin film 200 Wherein the method comprises the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150051985A KR20160122340A (en) | 2015-04-13 | 2015-04-13 | . method for manufacturing flexable led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150051985A KR20160122340A (en) | 2015-04-13 | 2015-04-13 | . method for manufacturing flexable led |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160122340A true KR20160122340A (en) | 2016-10-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150051985A KR20160122340A (en) | 2015-04-13 | 2015-04-13 | . method for manufacturing flexable led |
Country Status (1)
| Country | Link |
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| KR (1) | KR20160122340A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101211322B1 (en) | 2011-02-16 | 2012-12-11 | 한국전자통신연구원 | Method for manufacturing flexible GaN light emitting diode and flexible GaN light emitting diode manufactured by the same |
-
2015
- 2015-04-13 KR KR1020150051985A patent/KR20160122340A/en not_active Application Discontinuation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101211322B1 (en) | 2011-02-16 | 2012-12-11 | 한국전자통신연구원 | Method for manufacturing flexible GaN light emitting diode and flexible GaN light emitting diode manufactured by the same |
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