KR20160121883A - Vertical chemical vapor deposition apparatus capable of selective deposition - Google Patents

Vertical chemical vapor deposition apparatus capable of selective deposition Download PDF

Info

Publication number
KR20160121883A
KR20160121883A KR1020150051668A KR20150051668A KR20160121883A KR 20160121883 A KR20160121883 A KR 20160121883A KR 1020150051668 A KR1020150051668 A KR 1020150051668A KR 20150051668 A KR20150051668 A KR 20150051668A KR 20160121883 A KR20160121883 A KR 20160121883A
Authority
KR
South Korea
Prior art keywords
space
processing space
processing
process gas
vapor deposition
Prior art date
Application number
KR1020150051668A
Other languages
Korean (ko)
Inventor
우창현
Original Assignee
주식회사 티씨케이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 티씨케이 filed Critical 주식회사 티씨케이
Priority to KR1020150051668A priority Critical patent/KR20160121883A/en
Publication of KR20160121883A publication Critical patent/KR20160121883A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a vertical chemical vapor deposition (CVD) apparatus capable of allowing selective deposition, comprising: a processing furnace to provide a processing space; multiple nozzles vertically arranged on an inner surface of the processing furnace and selectively injecting process gas; multiple partitions arranged between the nozzles to horizontally divide the processing space, wherein a processing target is selectively inserted into a part of the partition; and multiple discharge holes arranged in each processing space divided by the partitions. According to the present invention, a thin film is selectively deposited on an upper or lower part, one side surface, the inside or the outside of a processing target, so process corresponding to various needs of a market can be performed.

Description

[0001] The present invention relates to a vertical chemical vapor deposition apparatus capable of selective deposition,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical chemical vapor deposition apparatus capable of selective deposition, and more particularly, to a vertical chemical vapor deposition apparatus capable of selective deposition capable of depositing only a part of a product.

In general, the vertical chemical vapor deposition apparatus has a structure having a vertical type of deposition furnace (reactor), in which a plurality of substrates or deposition base structures are stacked upward, and a thin film having a desired physical property is supplied to the substrate or base Is a device for depositing on a structure. At this time, the temperature is controlled by an external heater in the reaction furnace.

The deposition furnace of the vertical chemical vapor deposition apparatus includes a nozzle for supplying the reaction gas and a gas discharge pipe for discharging the gas after the reaction to remove the gas.

For example, Japanese Patent Application Laid-Open No. 10-1382375 (vertical CVD apparatus, registered April 1, 2014) includes a process gas passage into which a process gas is injected and a plurality of process gas ejection openings formed along the process gas passage, It can be seen that the gas can be injected to a plurality of objects to be treated, and that the manifold is provided with an exhaust port for discharging the process gas or the like remaining therein.

Such a configuration will be briefly described as follows.

1 is a simplified schematic diagram of a conventional vertical CVD apparatus.

1, a conventional vertical CVD apparatus comprises a vapor deposition furnace 1, a heater 2 for heating the vapor deposition furnace 1 from the outside of the vapor deposition furnace 1, A plurality of nozzles 3 arranged vertically in the deposition furnace 1 for injecting a process gas into the deposition furnace 1 and an exhaust port 4 for depositing a thin film on the object 5 in the deposition path 1 and exhausting residual gas, .

In this configuration, a plurality of nozzles 3 can be vertically disposed inside the deposition furnace 1 to uniformly inject the process gas into the deposition furnace 1, and the deposition furnace 1 is provided with a plurality of objects to be treated 5) can be processed at the same time.

However, when a thin film is deposited on the object 5 having various shapes, it is impossible to deposit the thin film only on the inside or outside of the object 5, or selectively deposit the thin film only on the upper or lower part of the object 5 .

Accordingly, there is a need for a conventional vertical CVD apparatus to be able to improve a structure capable of selective coating in an industrial field to treat various objects to be treated 5. [

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to solve the above problems, and it is an object of the present invention to provide a method and apparatus for simultaneously processing a plurality of objects to be processed, And a vapor deposition apparatus.

According to an aspect of the present invention, there is provided a process chamber including: a processing furnace for providing a processing space; a plurality of nozzles vertically disposed on an inner surface of the processing furnace for selectively injecting a process gas; And a plurality of exhaust ports arranged in each of the plurality of processing spaces partitioned by the plurality of partition walls. The plurality of partition walls are divided into a plurality of processing spaces.

The vertical chemical vapor deposition apparatus of the present invention comprises a plurality of nozzles arranged vertically and a partition wall for horizontally closing the processing path between the nozzles, and the exhaust port corresponding to the nozzles in one-to-one correspondence with the partition And the upper or lower nozzle is selected based on the partition so as to inject the process gas in a state in which the object to be processed is inserted and fixed on the partition wall so that the upper or lower part of the object, It is possible to selectively deposit a thin film only on the inside or the outside, thereby enabling the processing to be performed in accordance with various demands of the market.

1 is a simplified schematic diagram of a conventional vertical chemical vapor deposition apparatus.
2 is a simplified block diagram of a vertical chemical vapor deposition apparatus capable of selective deposition according to a preferred embodiment of the present invention.

Hereinafter, a vertical chemical vapor deposition apparatus capable of selective deposition of the present invention will be described in detail with reference to the accompanying drawings.

2 is a simplified block diagram of a vertical chemical vapor deposition apparatus capable of selective deposition according to a preferred embodiment of the present invention.

Referring to FIG. 2, the vertical chemical vapor deposition apparatus capable of selective deposition according to the preferred embodiment of the present invention includes an evaporation furnace 10, a heater (not shown) for heating the evaporation furnace 10 from the outside of the evaporation furnace 10 First to fourth nozzles 31, 32, 33, 34 provided vertically on the inner surface of the deposition furnace 10 for injecting a process gas into the deposition furnace 10, First to third partition walls 61, 62, 63 for dividing the inner surface of the deposition furnace 10 between the first to fourth nozzles 31, 32, 33, 34 in a horizontal space, 41, 42, 43, 44 arranged for each space divided by the first, second, third, and fourth exhaust ports (61, 62, 63).

Hereinafter, the construction and operation of the vertical chemical vapor deposition apparatus capable of selective deposition according to a preferred embodiment of the present invention will be described in detail.

First, the deposition furnace 10 provides a closed processing space, and the first to third partition walls 61, 62, 63 in the horizontal direction are vertically arranged inside the deposition furnace 10, Into four spaces arranged vertically.

Each of the first, second, and third barrier ribs 61, 62, and 63 is adjustable in height so that the height of the divided space can be adjusted. Only the first to third partition walls 61, 62, 63 are positioned between the first to fourth nozzles 31, 32, 33, 34 arranged vertically inside the deposition path 10, respectively.

In the present embodiment, four nozzles and three partitions are exemplified. However, this is for convenience of explanation, and the present invention is not limited by the number of nozzles and the number of partitions.

In each of the first to third partition walls 61, 62 and 63, the objects to be treated 51 and 52 are inserted as needed, and the object to be treated is divided into the first to third partition walls 61, 62 and 63 Let each part be located in space.

In addition, first to fourth exhaust ports 41, 42, 43, and 44 are formed in order in the vertical direction for each space partitioned by the first to third partition walls 61, 62, and 63, respectively. It can be seen that the first to fourth exhaust ports 41, 42, 43, and 44 correspond to the first to fourth nozzles 31, 32, 33, and 34 in one-to-one correspondence.

In other words, it can be seen that one nozzle and one exhaust port are disposed in the spaces divided by the first to third partition walls 61, 62 and 63, respectively, so that the individual process gas can be supplied and exhausted.

When the process gas is supplied only through the selected one of the first to fourth nozzles 31, 32, 33, and 34 in this state, the objects to be processed 51, 52 located in the divided spaces, To selectively deposit a thin film on only a part of the substrate.

More specifically, first, the object to be treated 51 is a disc-shaped structure, a part of which is inserted into the first partition wall 61, and the upper part of the object is an upper part of the first partition wall 61, 61 and the second partition 62, as shown in FIG.

In this state, if the process gas is injected only through the first nozzle 31 and the process gas is not injected through the second nozzle 32, a thin film is deposited only on the upper side of the object to be treated 51, The gas used in the process is exhausted through the first exhaust port (41).

On the contrary, if the process gas is injected only through the second nozzle 32 without injecting the process gas through the first nozzle 31, the process gas is injected through the second nozzle 32 and is located in the space between the first partition wall 61 and the second partition wall 62 A thin film is deposited only on the lower portion of the object 52 to be treated. At this time, the residual process gas used for the treatment is exhausted through the second exhaust port 42.

As such, the present invention can selectively deposit a thin film on the upper or lower part of the object to be treated 51. In this case, although it is expressed as an upper portion or a lower portion of the object to be treated 51, it can be easily deduced that the thin film can be selectively deposited on the left or right side depending on the insertion direction of the object to be treated 51.

The object to be processed 52 to be inserted and fixed in the third partition 63 is a structure having an inner space from the upper side to the inner side and the third object 63 is located in the space between the third partition 63 and the second partition 62, A thin film is deposited on the inner space and the upper part of the object to be processed 52 when the fourth nozzle 34 is processed in a state in which the process gas is not sprayed.

At this time, the residual process gas used for the treatment is exhausted through the third exhaust port (43).

On the contrary, when the process gas is sprayed through the fourth nozzle 34 and not sprayed through the third nozzle 33, a thin film may be deposited only on the outside of the object to be treated 52.

As described above in detail, according to the present invention, a thin film can be selectively deposited only on the upper, lower, left, right, inside, and outside sides of the object to be treated, And the like.

In order to select the first through fourth nozzles 31, 32, 33, and 34 and supply the process gas through a specific nozzle, an individual pipe is connected to each of the first through fourth nozzles 31, 32, And a specific nozzle can be selected by adding a valve to the pipe.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention will be.

10: processing line 20: heater
31: first nozzle 32: second nozzle
33: third nozzle 34: fourth nozzle
41: first exhaust port 42: second exhaust port
43: third exhaust port 44: fourth exhaust port
51, 52: object to be treated 61: first partition
62: second partition 63: third partition

Claims (4)

A process for providing a processing space;
A plurality of nozzles vertically disposed on an inner surface of the processing furnace and selectively injecting a process gas;
A plurality of partition walls disposed between the plurality of nozzles and dividing the processing space in a horizontal direction and selectively inserting objects to be processed; And
And a plurality of exhaust ports arranged for each of the plurality of processing spaces partitioned by the plurality of partition walls.
The method according to claim 1,
Wherein,
Characterized in that it is provided with two processing spaces divided into an upper processing space and a lower processing space such that a part of the inserted object to be processed is located in the upper processing space and the other part is located in the lower processing space A vertical chemical vapor deposition apparatus capable of vapor deposition.
3. The method of claim 2,
Wherein the object to be treated has an upper portion in the upper processing space and a lower portion in the lower processing space,
Wherein a thin film is deposited only on the upper or lower portion of the vertical processing space or the lower processing space as the process gas is selectively injected by the nozzle.
3. The method of claim 2,
The object to be treated has a structure having an internal space,
An upper surface communicating with the inner space is located in the upper processing space and another portion not communicating with the inner space is located in the lower processing space,
Wherein the thin film is deposited only in the inner space or outside as the process gas is selectively injected into the upper process space or the lower process space by the nozzle.
KR1020150051668A 2015-04-13 2015-04-13 Vertical chemical vapor deposition apparatus capable of selective deposition KR20160121883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150051668A KR20160121883A (en) 2015-04-13 2015-04-13 Vertical chemical vapor deposition apparatus capable of selective deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150051668A KR20160121883A (en) 2015-04-13 2015-04-13 Vertical chemical vapor deposition apparatus capable of selective deposition

Publications (1)

Publication Number Publication Date
KR20160121883A true KR20160121883A (en) 2016-10-21

Family

ID=57257162

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150051668A KR20160121883A (en) 2015-04-13 2015-04-13 Vertical chemical vapor deposition apparatus capable of selective deposition

Country Status (1)

Country Link
KR (1) KR20160121883A (en)

Similar Documents

Publication Publication Date Title
US11821083B2 (en) Gas separation control in spatial atomic layer deposition
JP2020014004A (en) Chemical control features in wafer process equipment
JP5818288B2 (en) Injection member used for semiconductor manufacturing and substrate processing apparatus having the same
KR100931331B1 (en) Injection unit of thin film deposition apparatus
KR101710944B1 (en) Substrate Processing Apparatus
JP6151829B2 (en) Substrate processing equipment
TWI643977B (en) Film forming apparatus and shower head
US20140377039A1 (en) Unit and method for cooling, and apparatus and method for treating substrate
US10256075B2 (en) Gas splitting by time average injection into different zones by fast gas valves
KR20120012255A (en) Horizontal batch type ald
KR101006583B1 (en) Horizontal batch type ald
KR20160059968A (en) Nozzle and substrate processing apparatus using same
KR20160121883A (en) Vertical chemical vapor deposition apparatus capable of selective deposition
KR20140038070A (en) Gas injector and injector pipe thereof
KR101573689B1 (en) The apparatus for depositing the atomic layer
KR101393463B1 (en) Thin layer deposition apparatus
CN103215566B (en) Gas supply shower nozzle and substrate board treatment
KR20120066852A (en) Thin layer deposition apparatus
KR101478788B1 (en) Apparatus for depositing thin film and method for depositing thin film using it
KR102461199B1 (en) Substrate processing apparatus
KR100700448B1 (en) A triple showerhead and ald apparatus that have the triple showerhead
KR20160081437A (en) Vertical type chemical vapor deposition device
KR20160081342A (en) A ald apparatus for large substrate
KR101573687B1 (en) The apparatus for depositing the atomic layer
KR101219381B1 (en) Thin layer deposition method

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E601 Decision to refuse application