KR20160121715A - Substrate treating apparatus - Google Patents

Substrate treating apparatus Download PDF

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Publication number
KR20160121715A
KR20160121715A KR1020150050835A KR20150050835A KR20160121715A KR 20160121715 A KR20160121715 A KR 20160121715A KR 1020150050835 A KR1020150050835 A KR 1020150050835A KR 20150050835 A KR20150050835 A KR 20150050835A KR 20160121715 A KR20160121715 A KR 20160121715A
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KR
South Korea
Prior art keywords
chamber
chamber lid
chamber body
lid
exhaust
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KR1020150050835A
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Korean (ko)
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KR101724100B1 (en
Inventor
양승국
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피에스케이 주식회사
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Priority to KR1020150050835A priority Critical patent/KR101724100B1/en
Publication of KR20160121715A publication Critical patent/KR20160121715A/en
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Publication of KR101724100B1 publication Critical patent/KR101724100B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

A substrate processing apparatus is disclosed. A substrate processing apparatus according to an embodiment of the present invention includes a processing chamber having an upper opened chamber body and a chamber lid for sealing an open upper portion of the chamber body; An opening / closing unit for opening / closing the chamber lid from the chamber body; A plasma generator connected to the chamber lid and generating a plasma during a process to supply the plasma to a process chamber; A susceptor for supporting the substrate in the process chamber; And a baffle positioned between the susceptor and the chamber lid, the baffle having ejection holes for ejecting a plasma generated in the plasma generating portion to a substrate placed on the susceptor; Wherein the opening / closing unit comprises: a stationary frame fixed to the chamber lid; A vertical shaft connected to the fixed frame; And a vertical driving member installed on the vertical shaft for vertically elevating and lowering the vertical shaft and a rotation driving member for rotating the vertical shaft.

Description

[0001] SUBSTRATE TREATING APPARATUS [0002]

The present invention relates to a substrate processing apparatus.

In general, in order to manufacture a semiconductor device or a flat panel display device, a thin film deposition process for depositing a thin film of a specific material on a substrate, a photolithography process for exposing or hiding a selected region of the thin film using a photosensitive material, And an etching process for patterning as desired, and each of these processes proceeds inside a chamber designed as an optimal environment for the process.

More particularly, in recent years, there has been developed a process chamber for processing a substrate in order to process a large amount of substrates in a short time, a load lock chamber as a buffer region for entering and leaving the substrate, and a transfer chamber for transferring or transferring the substrate between the load lock chamber and the process chamber A transfer chamber and the like are integrally connected to each other.

Each of these chambers commonly includes a chamber body having a space formed therein and a lid at the top of the chamber body. And the chamber can be disassembled and assembled when the maintenance of the inside of the chamber is required by releasably coupling the chamber body and the lid.

On the other hand, since the lead is usually made of a metal such as aluminum and is very heavy, a separate opening and closing device is required in order to separate the chamber from the chamber body.

1 is a view showing a conventional chamber opening / closing structure.

Referring to Fig. 1, the chamber body 1 and the lid 2 are opened and closed by a hinge-type opening / closing device. Then, the lid 2 is placed with a Quartz part (not shown), and then the screw is fastened to fix the baffle 3 to the lid 2. Such a mounting structure may cause arcing damage because the baffle 3 is fixed to the lid 2 as well as the quart part is not properly aligned and the lug is weaker than the chamber body 1. Also, when the present structure is applied to a 450 mm substrate, the weight of the baffle 1 or major parts increases, making it difficult to fasten the baffle. In addition, this structure presents a drawback that is always at risk when replacing major parts inside the chamber.

Embodiments of the present invention are intended to provide a substrate processing apparatus that is easy to maintain.

Embodiments of the present invention are intended to provide a substrate processing apparatus capable of providing a uniform flow space in a chamber.

Embodiments of the present invention are intended to provide a substrate processing apparatus capable of minimizing radical losses in a plasma.

Embodiments of the present invention are intended to provide a substrate processing apparatus capable of reducing the time required for detachment or detachment of the chamber lid.

Embodiments of the present invention are intended to provide a substrate processing apparatus for minimizing arcing that occurs during processing in a chamber.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a process chamber having an upper opened chamber body and a chamber lid sealing the open top of the chamber body; An opening / closing unit for opening / closing the chamber lid from the chamber body; A plasma generator connected to the chamber lid and generating a plasma during a process to supply the plasma to a process chamber; A susceptor for supporting the substrate in the process chamber; And a baffle positioned between the susceptor and the chamber lid, the baffle having ejection holes for ejecting a plasma generated in the plasma generating portion to a substrate placed on the susceptor; Wherein the opening / closing unit comprises: a stationary frame fixed to the chamber lid; A vertical shaft connected to the fixed frame; And a vertical driving member installed on the vertical shaft for vertically moving the vertical shaft, and a rotation driving member for rotating the vertical shaft.

The exhaust system further includes an exhaust module for exhausting the inside of the process chamber, wherein the exhaust module includes sub exhaust lines connected to exhaust outlets formed on a bottom surface of the chamber body; An exhaust buffer tank having a flow buffer space and to which the sub-exhaust lines are connected; And a main exhaust line connected to the center of the bottom of the exhaust buffer tank.

In addition, the outlet may have a funnel shape in which the inlet is wide and the outlet is narrow.

And an inverted funnel shape having a narrow first end portion connected to the reactor of the plasma generation portion and a wide second end portion for guiding the plasma generated in the plasma generation portion to the baffle, Further comprising: The first end may have a larger diameter than the reactor.

The reactor may further include a reaction tube; A first rib formed at one end of the reaction tube and coupled with the chamber lid; And a second rib formed inside the first rib and extending in a straight line with the reaction tube, wherein a space is provided between the first rib and the second rib for fitting the first end have.

The focus adapter may further include a side end extending vertically from the second end and the chamber lead further includes supporter blocks mounted on a bottom surface of the chamber lead to support the side end of the focus adapter can do.

In addition, the side end portion may further include a focus adapter alignment portion protruding from one side, and the chamber lead may further include an alignment groove on the inner side of which the focus adapter alignment portion is located.

The process chamber may further include an alignment key for alignment between the chamber lid and the chamber body.

The alignment mark may be provided on one side of the rim of the chamber body that is in contact with the chamber lid and on one side of the rim of the chamber lid in contact with the chamber body.

The process chamber may further include a gasket for local grounding disposed at a predetermined distance from an upper surface of the chamber body in contact with the chamber lid for local grounding between the chamber lid and the chamber body.

Also, the gasket for local grounding may have a Z-shaped cross-sectional shape and may have a material having electrical conductivity.

The baffle may include a spray plate having the injection holes formed therein; And a fixing plate positioned around the injection plate and fixed to the process chamber; The fixing plate is provided in a ring shape, and fastening holes are formed and fixed to the upper surface of the edge of the chamber body through a fastening member inserted through the fastening holes.

Further, the baffle may further include a ring-shaped baffle rib protruding along the upper surface of the fixing plate, and the baffle rib may be fitted in a groove formed between the focus adapter and the chamber lid.

The baffle may include a spray plate having the injection holes formed therein; And a fixing plate positioned around the injection plate and fixed to the process chamber; The fixing plate is provided in a ring shape, is formed with fastening holes, and can be fixed to the bottom of the edge of the chamber lead through a fastening member inserted through the fastening holes.

In addition, the chamber lid may be formed with threaded holes passing along the edge thereof, and the fastening member may be fastened to the fastening holes of the fastening plate through the screw hole.

The focus adapter may further include a side end portion extending perpendicularly from the second end portion, and the side end portion may further include an alignment protrusion protruding from an upper surface adjacent to the second end portion.

The chamber lid may further include an alignment groove into which the alignment protrusion is inserted.

The baffle may further include a first support groove formed in a ring shape to support the focus adapter on an upper surface of the fixing plate, and a lower support end of the side end may be seated and supported in the first support groove.

The first support groove may be formed between two ribs protruding from the upper surface of the fixing plate.

The apparatus may further include an annular liner member provided to surround the interior of the chamber body, The liner member comprising: an upper flange secured to an upper surface of the chamber body; A vertical liner portion extending from the upper flange and covering an inner surface of the chamber body; And a horizontal liner portion horizontally extending from the vertical liner portion and having an end supported by an outer surface of the susceptor.

In addition, the horizontal liner portion may have exhaust holes through which residual gas and reaction by-products generated during the process are exhausted.

According to an aspect of the present invention, there is provided a process chamber having an upper opened chamber body and a chamber lid sealing the open top of the chamber body; An opening / closing unit for opening / closing the chamber lid from the chamber body; A plasma generator connected to the chamber lid and generating a plasma during a process to supply the plasma to a process chamber; And a second end connected to the reactor of the plasma generator for guiding the plasma generated in the plasma generator to the baffle, the first end having a larger diameter than the reactor, and the second end having a larger diameter than the first end, A focus adapter in the form of an inverted funnel; And an exhaust module for exhausting the inside of the process chamber, wherein the exhaust module includes sub exhaust lines connected to each of the funnel-shaped exhaust openings formed on the bottom surface of the chamber body; An exhaust buffer tank having a flow buffer space and to which the sub-exhaust lines are connected; And a main exhaust line connected to the center of the bottom of the exhaust buffer tank, wherein the opening / closing unit rotates the chamber lid in a vertical direction and rotates the chamber lid.

The focus adapter may further include a side end extending vertically from the second end and the chamber lead further includes supporter blocks mounted on a bottom surface of the chamber lead to support the side end of the focus adapter can do.

The process chamber may further include a gasket for local grounding having a Z-shaped cross-sectional shape that is spaced apart from the upper surface of the chamber body in contact with the chamber lid for local grounding between the chamber lid and the chamber body .

The apparatus may further include an annular liner member provided to surround the interior of the chamber body, The liner member comprising: a vertical liner portion covering an inner surface of the chamber body; And a horizontal liner portion horizontally extending from the vertical liner portion and having an end supported by an outer surface of the susceptor, wherein the horizontal liner portion may have exhaust holes through which residual gas and reaction by-products generated during the process are exhausted .

Embodiments of the present invention are easy to maintain.

Embodiments of the present invention can provide a uniform flow space in the chamber.

Embodiments of the present invention can minimize the radical losses in the plasma.

Embodiments of the present invention can reduce the time required for detachment of the chamber lid when detaching the chamber lid.

Embodiments of the present invention can minimize arcing that occurs during process operation.

1 is a view showing a conventional chamber opening / closing structure.
2 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
Fig. 3 is an external view of the substrate processing apparatus shown in Fig. 2. Fig.
4 and 5 are views for explaining the operation in which the chamber lid is opened and closed from the chamber body in the substrate processing apparatus.
6 is a cross-sectional view of the substrate processing apparatus shown in Fig.
7 is a perspective view showing a baffle and a liner member installed in the chamber body;
8 is a cross-sectional view taken along the line AA shown in Fig.
9 is a cross-sectional view taken along the BB line shown in Fig.
Fig. 10 is an enlarged view showing the coupling structure of the reactor and the focus adapter.
11 is an enlarged view of the main part of the substrate processing apparatus shown in Fig.
12 is a bottom view of the chamber lid equipped with the focus adapter.
Figure 13 is a plan view of the chamber body with the baffle mounted thereon.
14 is a plan view of the chamber body with the baffle removed.
15 is a cross-sectional view showing a substrate processing apparatus according to the second embodiment.
FIG. 16 is a sectional view showing a state in which the chamber lid is separated in FIG. 15. FIG.
17 is an enlarged view of a main portion of a substrate processing apparatus according to the second embodiment.
18A and 18B are views showing an alignment structure of the chamber lid and the liner member.
FIG. 19 is a view as viewed from the CC direction shown in FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings.

2 is a plan view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

In the substrate processing facility 1000, an index module 1110 called an equipment front end module (EFEM) is disposed in front. The index module 1110 includes a frame 1112 and a FOUP opener for opening and closing the cover of the FOUP F where two FOUPs (aka carriers) Lt; RTI ID = 0.0 > 1114 < / RTI > FOUP F is a carrier for a typical lot for production and is mounted on a load station 1114 by a logistics automation system (e.g., OHT, AGV, RGV, etc.).

Inside the frame 1112 there is provided a transfer robot 1118 that can operate to transfer the substrate between the FOUP F and the processing unit 1120 seated in the load station 1114. [ This transfer robot 1118 transfers the substrate between the FOUP F and the process processing unit 1120. That is, the transfer robot 1118 takes out the substrates from the FOUP F placed in the load station 1114 at least once in a single operation and transfers them to the load lock chamber 1122, respectively. The transfer robot 1118 installed in the index module 1110 can use various robots that are typically used in a semiconductor manufacturing process.

Referring again to FIG. 1, the processing unit 1120 is disposed behind the index module 1110. The process processing unit 1120 includes two loadlock modules 1122, a transfer module 1130, a substrate processing apparatus 10 and a substrate transfer apparatus 1150).

A processing module 1120 is disposed at the center and a transfer module 1130 having a polygonal shape is disposed between the index module 1110 and the transfer chamber 1130. Between the index module 1110 and the transfer chamber 1130, A load lock module 1122 is disposed. Typically, the loadlock module 1122 serves as a buffer between two or more different environments, for example between an atmospheric pressure environment and a vacuum environment, and the substrate for processing (or the substrate processed in the substrate processing module) .

In addition, on each side surface of the transport module 1130, a substrate processing apparatus 10 that performs a predetermined process with respect to the substrate is disposed. The substrate processing apparatus 10 includes a process chamber, and a susceptor may be provided in the process chamber so that the process is simultaneously performed on the substrate. The susceptors are arranged side by side facing the substrate entrance.

Where the substrate processing apparatus 10 may be configured to perform various substrate processing operations. For example, the substrate processing apparatus may be an ashing chamber that removes the photoresist using a plasma to remove the photoresist, and the substrate processing apparatus may be a CVD chamber configured to deposit an insulating film, The apparatus may be an etch chamber configured to etch apertures or openings in an insulating film to form interconnect structures, and the substrate processing apparatus may be a chamber for preheating or cooling the substrate.

In this embodiment, a plasma ashing apparatus for removing unnecessary photosensitivity remaining on a substrate after a photolithography process using a plasma will be described as an example. However, the technical spirit of the present invention is not limited thereto, and can be applied to other kinds of apparatuses for processing a semiconductor substrate by using plasma or other kinds of apparatuses for processing a semiconductor substrate by using a processing gas.

In this embodiment, microwave is used as an energy source for generating plasma, but various energy sources such as a high-frequency power source may be used.

Fig. 3 is an external view of the substrate processing apparatus shown in Fig. 1, and Figs. 4 and 5 are views for explaining the operation in which the chamber lid is opened and closed from the chamber body in the substrate processing apparatus.

3 to 4, a substrate processing apparatus 10 according to an embodiment of the present invention includes a semiconductor (not shown) for ashing a surface of a substrate for manufacturing a semiconductor device Manufacturing device.

The substrate processing apparatus 10 includes a process chamber 100 that provides a predetermined closed atmosphere, a plasma generation unit 900, and an opening / closing unit 800.

The process chamber 100 provides a process space in which an ashing process is performed.

The process chamber 100 includes a chamber body 110 and a chamber lid 120. The chamber lid 120 is opened and closed by the opening and closing unit 800 from the chamber body 110.

The opening and closing unit 800 is configured to open and close the chamber lid 120 from the chamber body 110. The opening and closing unit 800 includes a stationary frame 810, a vertical shaft 820, and a driving member 830 ).

The fixed frame 810 is fixed to the chamber lid 120. A vertical frame 812 fixed to the upper surface of the chamber lead 120 which is the fixed frame 810 and a connection frame 814 connecting the vertical frames 812.

The vertical shaft 820 is vertically installed on one side of the process chamber 100. The upper end of the vertical shaft 820 is connected to the fixed frame 812.

The driving member 830 may be installed in the vertical shaft 820. The driving member 830 may include a vertical driving member 832 for vertically moving the vertical shaft 820 and a turning driving member 834 for rotating the vertical shaft 820. The vertical driving member 832 may be a power generating device such as a linear actuator, and the turning driving member 834 may be a power generating device such as a motor.

Next, the opening operation of the chamber lid for maintenance such as part replacement and cleaning inside the process chamber will be described.

As shown in FIGS. 3 and 4, the opening operation of the chamber lead 120 may be performed by a first stage lift operation and a second stage rotation operation.

In the first stage lifting operation, the chamber lead 120 is lifted vertically from the chamber body 110 by the vertical driving member 832. The chamber lid 120 lifted from the chamber body 110 is rotated to one side of the chamber body 110 about the vertical shaft 820 by the rotation driving member 834. Since the chamber lid 120 is moved to one side of the upper portion of the chamber body 110 by the opening and closing member 800, there is no obstacle on the chamber body 110. Therefore, the working space is widened, Maintenance work becomes easy.

Meanwhile, the process chamber 100 has an alignment key 190 for facilitating alignment with the chamber body 110 when the chamber lid 120 is opened and closed. The alignment mark 190 may correspond to one side of the rim of the chamber body 110 contacting the chamber lid 120 and one side of the rim of the chamber lid 120 contacting the chamber body 110. For example, the alignment mark 190 may include an alignment pin 192 formed to protrude from one side of the chamber body 110, and an alignment hole 192 formed at one side of the chamber lead 120 and in which the alignment pin 192 is inserted Hole 194, as shown in FIG.

Since the process chamber 100 of the present invention can easily identify the position of the process chamber 100 by the alignment mark 190 with the naked eye, the process chamber 100 can be prevented from being damaged due to force applied to the chamber lead 120 or mismatch Can be prevented.

FIG. 6 is a cross-sectional view of the substrate processing apparatus shown in FIG. 3, and FIG. 7 is a perspective view showing a baffle and a liner member installed in the chamber body. Hereinafter, the opening and closing unit is omitted in the drawings and the description.

6 and 7, in one example, the substrate processing apparatus may be provided with an apparatus of an Inductively Coupled Plasma (ICP) type. The substrate processing apparatus 10 includes a processing section 12 and a plasma supply section 14. [ The plasma processing unit 12 provides a space in which the processing of the substrate W is performed and the plasma supplying unit 14 generates plasma used in the processing of the substrate W, (W). Hereinafter, each configuration will be described in detail.

The process processing section 12 includes a process chamber 100, a susceptor 200, a baffle 300, a focus adapter 400, a liner member 500 and an exhaust module 140.

The process chamber 100 provides a space in which process processing is performed. The process chamber 100 includes a chamber body 110 and a chamber lid 120.

An opening (not shown) through which the substrate W enters and exits is formed in a side wall of the chamber body 110, and the opening is opened and closed by an opening / closing member such as a slit door (not shown). The opening and closing member closes the opening while the processing of the substrate W in the processing chamber 100 is performed and when the substrate W is carried into the processing chamber 100 and out of the processing chamber 100 Open the opening.

FIG. 8 is a cross-sectional view taken along the line A-A shown in FIG. 6, and FIG. 9 is a cross-sectional view taken along line B-B shown in FIG.

As shown in FIGS. 8 and 9, exhaust holes 118 are formed in the lower wall of the chamber body 110. The exhaust ports 118 are connected to the sub-exhaust line 142 of the exhaust module 140. In order to smoothly conduct conductance in exhausting the exhaust module 140, the exhaust port 118 is formed in a funnel shape having a wide inlet and a narrow outlet, fume and reaction by-products can be easily exhausted.

The exhaust module 140 regulates the internal pressure of the process chamber 100 and discharges fumes and reaction by-products generated during the process to the outside of the process chamber 100. The exhaust module 140 has a sub-exhaust line 142 connected to each of the exhaust ports 118 formed in the bottom surface of the chamber body 110 and a floating buffer space 143, 142 connected to the exhaust buffer tank 144 and a main exhaust line 146 connected to the center of the bottom of the exhaust buffer tank 144. A mesh-shaped sieve 148 may be provided at the upper end of the sub-exhaust line 142 and the upper end of the main exhaust line 146, respectively.

On the other hand, the process chamber includes a gasket for local grounding for local grounding between the chamber lid and the chamber body. The gasket for local grounding is installed at a predetermined interval on the upper surface of the chamber body in contact with the chamber lid. The gasket for local grounding may be made of a material having a Z-shaped cross-sectional shape and having electrical conductivity.

Contacting the chamber body with the chamber lid as a metal may cause arcing damage in the fragile area. Therefore, most of the contacted parts are treated by enodizing to insulate, and only a part of the grounding gasket is inserted to induce perfect contact between the chamber body and the chamber lid so that it can be grounded with the local grounding gasket Respectively.

In FIG. 11, the contact surface indicated by the inverted triangle means a surface which is barely treated so as not to be insulated. The bare treated portion is limited to a portion where the bottom surface of the baffle comes in contact with the bottom surface of the baffle and a portion where the upper flange of the liner member comes into contact with the bare plate. Since the baffle 300 is a device for attracting a large number of charged particles, it is necessary to connect with the ground, and it is possible to minimize arcing damage by providing a sufficient grounding area.

The liner member may be an inner wall of the auxiliary chamber to prevent damage to the inner wall of the chamber. Therefore, although the liner member is designed to be easily detachable and attachable, the mounting of the liner member is mostly anodized. However, when the chamber body is mounted on the chamber body, Respectively.

Referring again to Figures 6 and 7, the susceptor 200 is positioned within the process body 110 and supports the substrate W. [ The susceptor 200 may be provided with an electrostatic chuck for fixing the substrate W by electrostatic force. Alternatively, the susceptor 200 may be provided in various ways, such as a vacuum chuck for fixing the substrate W by vacuum. Lift holes (not shown) may be formed in the susceptor 200. The lift holes may be provided with lift pins (not shown), respectively. The lift pins can be lifted and lowered along the lift holes when the substrate W is loaded / unloaded on the susceptor 200. A heater may be provided inside the susceptor 200. The heater heats the substrate W and maintains it at a temperature suitable for the process.

The baffle 300 filters the plasma. Plasma contains free radicals and ions. Free radicals have incomplete bonding and are electrically neutral. The free radicals are very reactive and perform the process primarily through chemical reactions with the material on the substrate (W). On the other hand, the ions accelerate in a constant direction according to the potential difference because they are charged. The accelerated ions physically collide with the material on the substrate W to perform the substrate processing. Therefore, in the ashing process, ions may collide with the substrate patterns as well as the photoresist film. Impacts of ions can damage the substrate pattern. In addition, the collision of ions can change the amount of charge of the patterns. The variation in charge of the patterns affects the subsequent process. As such, when the ions are supplied directly to the substrate W, the ions affect the processing. The baffle 3000 is grounded to solve the problem due to the ions mentioned above. The grounding of the baffle 300 moves the free radicals in the plasma to the substrate W and blocks the movement of ions.

In one example, the baffle 300 engages the top wall of the chamber body 111. The baffle 130 has a thin disk shape and is arranged to face the upper surface of the susceptor 200 in parallel. The baffle 300 may be provided with a flat surface facing the upper surface of the susceptor 200 and the opposite surface may be provided with a convex curved surface with a central portion. The baffle 300 may have a radius corresponding to the substrate W. [

Figure 13 is a plan view of the chamber body with the baffle mounted thereon.

Referring to FIGS. 6, 7 and 13, the baffle 300 includes an injection plate 310 and a fixing plate 320. Discharge holes 312 are formed in the ejection plate 310. The injection holes 312 are formed in the respective regions of the injection plate 310 uniformly through the through holes extending from the upper surface of the injection plate 310 to the bottom surface. The plasma supplied from the plasma generator 900 into the process chamber 100 passes through the injection holes 312 and is uniformly distributed into the process chamber 100.

The fixing plate 320 is provided around the injection plate 310 in an annular shape. The fixing plate 320 is formed with coupling grooves 322 and is fixed to the upper surface of the edge of the chamber body 110 through bolts inserted through the coupling holes 322.

The fixing plate 320 includes a baffle rib 330. The baffle ribs 330 protrude in a ring shape along the upper surface of the fixing plate 320. When the chamber lid 120 is coupled to the chamber body 110, the baffle rib 330 is fitted into the groove formed between the focus adapter 400 and the chamber lid 120.

The chamber lid 120 engages the upper wall of the chamber body 110 and covers the open top surface of the chamber body 110 to seal the interior of the chamber body 110. The upper end of the chamber lid 120 is connected to the plasma generator 900. The chamber lid 120 is formed with an induction space 120a. The guide space 120a has an inverted funnel shape. The plasma introduced from the plasma generator 900 is diffused in the guide space 120a and is transferred to the baffle 300. [

The plasma generator 900 is located above the chamber lid 120 and generates a plasma from the process gas. The plasma generator 900 includes a reaction tube 910, a gas injection port 920, an induction coil 930, and a power source (not shown).

The gas injection port 220 is coupled to the upper end of the reactor 210. The gas injection port 920 is connected to a gas supply part (not shown), and gas is introduced.

The induction coil 930 is wound several times around the reactor 910 to the reactor 910. One end of the induction coil 930 is connected to a power source (not shown), and the other end is grounded. The power source applies high frequency power or microwave power to the induction coil 930.

The gas supply unit supplies gas to the gas injection port. The process gas may include at least one of NH3, O2, N2, H3, and NF3CH4. As an example, the process gas may be subjected to an ashing process.

The reaction tube 910 has a cylindrical shape, and the upper surface and the lower surface are opened and a space is formed therein. The inside of the reaction tube 910 is provided to a discharge space 911 where the process gas is discharged. The lower end of the reaction tube 910 is connected to the upper end of the sealing cover 115, and the discharge space 211 is connected to the flow path 116. The process gas discharged in the discharge space 211 flows into the process chamber 110 through the flow path 116.

10 is an enlarged view showing the connection structure between the reaction tube and the focus adapter.

Referring to FIG. 10, the reaction tube 910 has a first rib 912 and a second rib at a lower end thereof. The first rib 912 is coupled to the chamber lid 120. The second rib 914 is spaced apart from the first rib 912 by a predetermined distance and extends in a straight line with the reaction tube 910. A gap 916 is formed between the first rib 912 and the second rib 914 and the first end 410 of the focus adapter 400 is fitted in the gap 916.

Referring again to FIG. 6, the focus adapter 400 is installed on the inner side of the chamber lid 110. The focus adapter 400 may be configured in the form of an inverted funnel having a narrow first end 410 and a wider second end 420 to guide the plasma generated in the plasma generating portion 900 to the baffle 300. [ Can be provided. The upper end of the first end portion 410 is fitted into the gap of the reaction tube 910. The diameter of the first end 410 is greater than the diameter of the reaction tube 910, which is a structure to minimize the loss of radicals produced in the reaction tube 910. When using this structure, the problem of ashing in the chamber can be alleviated since the charged particles never penetrate between the focus adapter 400 and the inner surface of the chamber lid 120.

On the other hand, the focus adapter 400 includes a side end portion 430. The side end portion 430 is formed to extend vertically from the second end portion 420.

The focus adapter 400 can be coupled to the chamber lid 120 without using a bolt. To this end, a supporter block 440 is fixed to the bottom surface of the chamber lead 120 by bolting, and a supporter block 440 supports the side end portion 430 of the focus adapter 400.

On the other hand, since the focus adapter 400 is not fixed to the chamber lead 120 by the bolt fastening, the focus adapter 400 may be shaken during flow and pumping / venting during the process. To prevent this, a reinforcing structure is required in which the focus adapter 400 can be fixed to the chamber lid 120 without shaking. If there is no such fixed structure, particles can be generated continuously. The present invention further provides a focus adapter aligning portion 432 at the side end portion 430 of the focus adapter 400 to supplement this portion.

12 is a view of the chamber lid viewed from the bottom with the focus adapter mounted on the chamber lid. 12, the focus adapter 400 is supported by three supporter blocks 440, and the focus adapter alignment portion 432 is formed protruding from one side of the side end portion 430. As shown in Fig. The chamber lid 120 has an alignment groove 129 in which the focus adapter alignment portion 432 is located. Thus, when the focus adapter alignment portion 432 is positioned in the alignment groove 129 of the chamber lead 120, the shake of the focus adapter 400 can be minimized.

14 is a plan view of the chamber body in a state where the liner member is mounted.

6, 7 and 14, the liner member 500 may be provided in an annular shape provided so as to surround the inside of the chamber body 110. The liner member 500 includes an upper flange 510 secured to the upper surface of the chamber body 110 and a vertical liner portion 520 extending from the upper flange 510 and covering the inner surface of the chamber body 110, And includes a horizontal liner portion 530 that extends horizontally from the vertical liner portion 520 and is supported at the outer surface of the susceptor 200 at its ends. The horizontal liner portion 530 has exhaust holes 532 through which the residual gas and reaction by-products generated in the process are exhausted. The end of the horizontal liner part 530 is supported on the side surface of the susceptor 200 and is designed in a free fall manner so that the ground can be perfectly secured and supported by the susceptor.

FIG. 15 is a cross-sectional view showing the substrate processing apparatus according to the second embodiment, FIG. 16 is a cross-sectional view showing a state in which the chamber lid is separated in FIG. 15, to be.

Hereinafter, a second embodiment of the present invention will be described with reference to Figs. In this case, the same configuration as that of the first embodiment described above will not be described. In the case where there is no special description for each configuration, the same configuration as that of the first embodiment is assumed, The description will be focused on the characteristic configuration according to the second embodiment of the present invention.

The baffle 301 may be secured to the bottom surface of the chamber lid 120 by fastening members (bolts) 390. However, the fastening members 390 for fixing the baffle 301 to the chamber lid 120 are fastened from the outside of the chamber lid 120. To this end, the chamber lid 120 is formed with threaded holes 127 penetrating along the edge thereof, and the fastening member 390 is fastened to the fastening holes 327 of the baffle 301 through the threaded hole 127 . When the baffle 301 is fixed to the chamber lid 120 by using the coupling members 390 from outside, the coupling member 390 is fastened in the ATM environment, so that the coupling member 390 in the pumping / Less.

16, the focus adapter 400 is not moved with the chamber lid 120 when the chamber lid 120 is opened, but is left on the baffle 301 as it is.

To this end, the baffle 301 is formed with a first support groove 329 in the shape of a ring so as to support the side end portion 430 of the focus adapter 400 on the upper surface of the fixing plate 320. The lower support end of the side end portion 430 is seated and supported in the first support groove 329. The first support groove 329 serves as an important guide for alignment of the focus adapter 400 when the chamber lid 120 is lowered to the chamber body 110.

The focus adapter 400 further includes an alignment protrusion 470 protruding from the upper surface of the side end portion 430 to align the chamber lead 120 and the focus adapter 400. [ The chamber lid 120 may have an alignment groove 126 into which the alignment protrusion 470 is inserted.

The baffle 301 is fixed to the chamber lid 120, so that the portion where the baffle 301 and the chamber lid face each other is bare. The portion where the baffle 301 and the liner member 500 are in contact with each other is subjected to an enodizing treatment to prevent arcing.

Figs. 18A and 18B are views showing the alignment structure of the chamber lid and the liner member, and Fig. 19 is a view as viewed in the direction of C-C shown in Fig.

18A to 19, in this embodiment, an alignment groove 125 is formed on the inner surface of the chamber lead 120 to prevent the focus adapter 400 from swinging, and the outer surface of the second end portion 420 And forms an allele protrusion 425 that can be inserted into the alignment groove 125 on the side surface.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: process chamber 200: susceptor
300: Baffle 400: Focus adapter
500: liner member

Claims (26)

A process chamber having a chamber body with an open top and a chamber lid sealing the open top of the chamber body;
An opening / closing unit for opening / closing the chamber lid from the chamber body;
A plasma generator connected to the chamber lid and generating a plasma during a process to supply the plasma to a process chamber;
A susceptor for supporting the substrate in the process chamber; And
And a baffle positioned between the susceptor and the chamber lid and having injection holes for injecting plasma generated in the plasma generating portion into a substrate to be placed on the susceptor;
The opening /
A fixed frame fixed to the chamber lid;
A vertical shaft connected to the fixed frame; And
A vertical driving member installed on the vertical shaft and vertically moving the vertical shaft, and a rotation driving member for rotating the vertical shaft. The method according to claim 1,
And an exhaust module for exhausting the inside of the process chamber,
The exhaust module
Sub exhaust lines connected to exhaust outlets formed on a bottom surface of the chamber body;
An exhaust buffer tank having a flow buffer space and to which the sub-exhaust lines are connected; And
And a main exhaust line connected to the center of the bottom of the exhaust buffer tank. 3. The method of claim 2,
Wherein the vent has a funnel shape with an inlet wide and an outlet narrow. The method according to claim 1,
An inverted funnel-shaped focus having a narrow first end connected to the reactor of the plasma generating section and a wide second end for guiding the plasma generated in the plasma generating section to the baffle, Further includes an adapter;
Wherein the first end has a wider diameter than the reactor. 5. The method of claim 4,
The reactor
Reaction tube;
A first rib formed at one end of the reaction tube and coupled with the chamber lid; And
And a second rib formed inside the first rib and extending in a straight line with the reaction tube,
Wherein a space is provided between the first rib and the second rib for fitting the first end. 5. The method of claim 4,
The focus adapter
Further comprising a side end extending vertically from the second end,
The chamber lid
Further comprising supporter blocks mounted on a bottom surface of the chamber lid to support the side ends of the focus adapter. The method according to claim 6,
The side end
Further comprising a focus adapter liner protruding from one side surface,
Wherein the chamber lid further comprises an alignment groove on the inner side of which the focus adapter alignment portion is located. The method according to claim 1,
The process chamber
Further comprising an alignment key for alignment between the chamber lid and the chamber body. 9. The method of claim 8,
The above-
And one side of a rim of the chamber body, which is in contact with the chamber lid, and one side of a rim of the chamber lid, which is in contact with the chamber body. 3. The method of claim 2,
The process chamber
Further comprising a local grounding gasket spaced apart from a top surface of the chamber body in contact with the chamber lid for local grounding between the chamber lid and the chamber body. 11. The method of claim 10,
The local grounding gasket
And has a Z-shaped cross-sectional shape and is made of a material having an electric conductivity (Conductivity). 5. The method of claim 4,
The baffle
An injection plate having the injection holes formed therein; And
A fixing plate positioned around the injection plate and fixed to the process chamber;
Wherein the fixing plate is provided in a ring shape and is fixed to an upper edge of the chamber body through a fastening member formed with fastening holes and inserted through the fastening holes. 13. The method of claim 12,
The baffle
And a ring-shaped baffle rib protruding along the upper surface of the fixing plate,
Wherein the baffle rib is fitted in a groove formed between the focus adapter and the chamber lid. 5. The method of claim 4,
The baffle
An injection plate having the injection holes formed therein; And
A fixing plate positioned around the injection plate and fixed to the process chamber;
Wherein the fixing plate is provided in a ring shape and is fixed to the bottom edge of the chamber lid through a fastening member formed with fastening holes and inserted through the fastening holes. 15. The method of claim 14,
The chamber lid
Screw holes are formed through the peripheries,
Wherein the fastening member is fastened to the fastening holes of the fixing plate through the screw hole. 15. The method of claim 14,
The focus adapter
And a side end extending vertically from the second end. 17. The method of claim 16,
The side end
And an alignment protrusion protruded from an upper surface adjacent to the second end. 18. The method of claim 17,
The chamber lid
And an alignment groove into which the alignment protrusion is inserted. 17. The method of claim 16,
The baffle
And a first support groove formed in a ring shape to support the focus adapter on the upper surface of the fixing plate,
And a lower support end of the side end portion is seated and supported in the first support recess. 20. The method of claim 19,
Wherein the first support groove is formed between two ribs protruding from the upper surface of the fixing plate. 13. The method of claim 12,
Further comprising: an annular liner member provided to surround the interior of the chamber body;
The liner member
An upper flange fixed to an upper surface of the chamber body;
A vertical liner portion extending from the upper flange and covering an inner surface of the chamber body; And
And a horizontal liner portion extending horizontally from the vertical liner portion and having an end supported by an outer surface of the susceptor. 22. The method of claim 21,
The horizontal liner portion
And exhaust holes through which the residual gas and reaction by-products generated in the process are exhausted. A process chamber having a chamber body with an open top and a chamber lid sealing the open top of the chamber body;
An opening / closing unit for opening / closing the chamber lid from the chamber body;
A plasma generator connected to the chamber lid and generating a plasma during a process to supply the plasma to a process chamber;
And a second end connected to the reactor of the plasma generator for guiding the plasma generated in the plasma generator to the baffle, the first end having a larger diameter than the reactor, and the second end having a larger diameter than the first end, A focus adapter in the form of an inverted funnel; And
And an exhaust module for exhausting the inside of the process chamber,
The exhaust module
Sub exhaust lines connected to each of the funnel-shaped exhaust openings formed on the bottom surface of the chamber body;
An exhaust buffer tank having a flow buffer space and to which the sub-exhaust lines are connected; And
And a main exhaust line connected to the center of the bottom of the exhaust buffer tank,
The opening /
And moves the chamber lid upwardly in a vertical direction, and then rotates to open the chamber lid. 24. The method of claim 23,
The focus adapter
Further comprising a side end extending vertically from the second end,
The chamber lid
Further comprising supporter blocks mounted on a bottom surface of the chamber lid to support the side ends of the focus adapter. 25. The method of claim 24,
The process chamber
Further comprising a local grounding gasket having a Z-shaped cross-sectional shape spaced a predetermined distance from an upper surface of the chamber body in contact with the chamber lid for local grounding between the chamber lid and the chamber body. 25. The method of claim 24,
Further comprising: an annular liner member provided to surround the interior of the chamber body;
The liner member
A vertical liner portion covering an inner surface of the chamber body; And
A horizontal liner portion extending horizontally from the vertical liner portion and having an end supported by an outer surface of the susceptor,
The horizontal liner portion
And exhaust holes through which the residual gas and reaction by-products generated in the process are exhausted.
KR1020150050835A 2015-04-10 2015-04-10 Substrate treating apparatus KR101724100B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190135829A (en) * 2018-05-29 2019-12-09 피에스케이홀딩스 (주) A baffle assembly and an apparatus for treating a substrate with the baffle
KR102406094B1 (en) * 2021-11-09 2022-06-08 박성원 Substrate plasma apparaus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010029087A (en) * 1999-09-29 2001-04-06 윤종용 A process chamber provided with separable lid
KR20080114151A (en) * 2007-06-27 2008-12-31 피에스케이 주식회사 Apparatus for treating substrates
KR20090067319A (en) * 2007-12-21 2009-06-25 주식회사 에이디피엔지니어링 Lid opening/closing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010029087A (en) * 1999-09-29 2001-04-06 윤종용 A process chamber provided with separable lid
KR20080114151A (en) * 2007-06-27 2008-12-31 피에스케이 주식회사 Apparatus for treating substrates
KR20090067319A (en) * 2007-12-21 2009-06-25 주식회사 에이디피엔지니어링 Lid opening/closing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190135829A (en) * 2018-05-29 2019-12-09 피에스케이홀딩스 (주) A baffle assembly and an apparatus for treating a substrate with the baffle
KR102406094B1 (en) * 2021-11-09 2022-06-08 박성원 Substrate plasma apparaus

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