KR20160117115A - sputter with rotatable substrate - Google Patents

sputter with rotatable substrate Download PDF

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Publication number
KR20160117115A
KR20160117115A KR1020150092887A KR20150092887A KR20160117115A KR 20160117115 A KR20160117115 A KR 20160117115A KR 1020150092887 A KR1020150092887 A KR 1020150092887A KR 20150092887 A KR20150092887 A KR 20150092887A KR 20160117115 A KR20160117115 A KR 20160117115A
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South Korea
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target
substrate
magnet
magnet array
rotating
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KR1020150092887A
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Korean (ko)
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KR101773668B1 (en
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이창규
정상권
배강
김화민
손선영
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(주)미주테크
정상권
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H01L21/203—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Computer Hardware Design (AREA)
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Abstract

A sputtering apparatus capable of rotating a substrate is disclosed. In one embodiment, the sputter apparatus includes a chamber, a tubular substrate disposed within the chamber and rotating about a central axis, a rotating mechanism for rotating the substrate about the central axis, A target for depositing a film on the surface of the substrate by sputtering, and a power source for generating a plasma in the chamber by applying a voltage between the substrate and the target. The rotating mechanism rotates the substrate so that the film deposited on the surface of the substrate by sputtering has a predetermined uniformity.

Figure P1020150092887

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a sputter-

The present invention relates to a sputtering apparatus, and more particularly, to a sputtering apparatus having a high deposition uniformity using a rotatable substrate and a sputtering method using the same.

Various methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and the like are used to form a thin film on a substrate. The sputtering method is an example of a PVD method and is a technique widely used for forming a thin film on a substrate. The sputtering method is a technique of colliding a cations on a plasma with a target to deposit a substance scattered from the target on a substrate to form a thin film on the substrate.

Generally, the sputtering apparatus is composed of an inline load-lock chamber, a process chamber, and an unload-lock chamber for improving the productivity and convenience of the deposition process. The substrate is introduced into the load lock chamber, the deposition process is performed in the process chamber, and the unload lock chamber performs the function of taking out the substrate on which the deposition is completed to the outside.

There has been much research on a substrate moving type sputtering apparatus for moving a substrate in order to prevent damage to the substrate due to heat generated in the substrate during the deposition process in the process chamber. In the case of the conventional substrate movable type sputtering apparatus, thermal damage of the substrate by continuous sputtering can be minimized. However, in the case of a conventional substrate moving type sputtering apparatus, the distance between the substrate and the target changes during the movement of the substrate, thereby changing the deposition rate of the thin film deposited on the substrate. Therefore, there is a problem that it is difficult to deposit a thin film having desired uniformity on a substrate. In order to solve this problem, the conventional substrate moving type sputtering apparatus uses the cathode having a narrow width to maintain the deposition uniformity, but the deposition rate is lowered in this case.

The present invention takes advantage of the advantages of conventional substrate transportable sputtering apparatus and provides a sputtering apparatus for solving the disadvantages. The sputtering apparatus of the present invention adopts a rotatable substrate. The substrate rotates around the rotation axis, thereby minimizing heat damage to the substrate by continuous sputtering. Also, the sputtering apparatus of the present invention employs a magnetron sputtering method, whereby the deposition rate of the thin film can be increased. In addition, the sputtering apparatus of the present invention employs a magnet array having a meander shape, thereby realizing large-area sputtering by enlarging the width of the cathode.

In one embodiment, a sputter device capable of substrate rotation is disclosed. The sputtering apparatus includes a chamber, a tubular substrate disposed inside the chamber and rotating about a central axis, a rotating mechanism rotating the substrate about the central axis, and a sputtering chamber disposed on one side of the substrate, A target for depositing a film on the surface, and a power source for generating a plasma in the chamber by applying a voltage between the substrate and the target. The rotating mechanism rotates the substrate so that the film deposited on the surface of the substrate by sputtering has a predetermined uniformity.

The sputtering apparatus may further include a moving mechanism for moving the substrate in a direction substantially parallel to the sputtered surface of the target.

The sputtering apparatus may further include a magnet array. The magnet array is disposed opposite to the other surface of the target, and generates a magnetic field to capture electrons in the plasma to a region adjacent to the one surface of the target, hereinafter referred to as an electron trap region, Thereby increasing the density and increasing the density of the plasma in the electron trap region.

The magnet array comprising an inner magnet extending in a direction substantially perpendicular to the one surface of the target and having an N pole or an S pole opposite the target, a magnet extending in a direction substantially perpendicular to the one surface of the target, An outer magnet surrounding the inner magnet and having a magnetic pole opposite to the inner magnet and facing the target, and a nonmagnetic material disposed between the inner magnet and the outer magnet and maintaining an interval between the inner magnet and the outer magnet Member.

Wherein the outer magnet has a pattern protruding in the direction of the inner magnet, the inner magnet is spaced apart from the protruding pattern of the outer magnet, and is alternately connected about the protruding pattern of the outer magnet, , meander). The area of the electron trap region can be increased through the meander shape.

The sputtering apparatus may further include a support in which the target and the magnet array are disposed. The target may be disposed on the support portion such that the one surface of the target is opposed to the substrate, and the magnet array may be disposed on the support portion against the other surface of the target. In this case, the magnet arrangement may be arranged in the support portion such that the inner magnet and the outer magnet are arranged to extend in a direction substantially perpendicular to the one face of the target.

The sputtering apparatus may further include a power section for rotating the target or the magnet array, or for providing a gradient to the target or the magnet array. In this case, the power section may act directly on the target or the magnet arrangement or act on the support to indirectly rotate the target or magnet arrangement, or provide a tilt to the target or the magnet arrangement.

The foregoing provides only a selective concept in a simplified form as to what is described in more detail hereinafter. The present disclosure is not intended to limit the scope of the claims or limit the scope of essential features or essential features of the claims.

1 is a conceptual diagram of a sputtering apparatus capable of rotating a substrate disclosed in this specification.
2 is a view for explaining the substrate and the cathode structure of the sputtering apparatus disclosed in this specification.
Figs. 3 and 4 are views for explaining the structure of the magnet array disclosed in this specification. Fig.

Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the drawings. Like reference numerals in the drawings denote like elements, unless the context clearly indicates otherwise. The exemplary embodiments described above in the detailed description, the drawings, and the claims are not intended to be limiting, and other embodiments may be utilized, and other variations are possible without departing from the spirit or scope of the disclosed technology. Those skilled in the art will appreciate that the components of the present disclosure, that is, the components generally described herein and illustrated in the figures, may be arranged, arranged, combined, or arranged in a variety of different configurations, all of which are expressly contemplated, As shown in FIG. In the drawings, the width, length, thickness or shape of an element, etc. may be exaggerated in order to clearly illustrate the various layers (or films), regions and shapes. When a component is referred to as being " deployed "to another component, it may include the case where the component is directly disposed on the other component, as well as the case where additional components are interposed therebetween.

When one component is referred to as being "disposed" to another component, it may include the case where the one component is disposed directly on the other component, as well as the case where additional components are interposed therebetween.

When one component is referred to as "connecting to another component ", it includes not only the case where the one component is directly connected to the other component, but also a case where an additional component is interposed therebetween.

The description of the disclosed technique is merely an example for structural or functional explanation and the scope of the disclosed technology should not be construed as being limited by the embodiments described in the text. That is, the embodiments are to be construed as being variously embodied and having various forms, so that the scope of the rights of the disclosed technology should be understood to include equivalents capable of realizing the technical ideas.

It is to be understood that the singular " include " or " have " are to be construed as including the stated feature, number, step, operation, It is to be understood that the combination is intended to specify that it is present and not to preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof.

All terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the disclosed technology belongs, unless otherwise defined. Terms defined in commonly used dictionaries should be interpreted to be consistent with meaning in the context of the relevant art and can not be construed as having ideal or overly formal meaning unless expressly defined in the present application.

1 is a conceptual diagram of a sputtering apparatus capable of rotating a substrate disclosed in this specification. 2 is a view for explaining the substrate and the cathode structure of the sputtering apparatus disclosed in this specification. Figs. 3 and 4 are views for explaining the structure of the magnet array disclosed in this specification. Fig. FIG. 2 (a) is a view showing the arrangement of a substrate inside the sputtering apparatus, and FIG. 2 (b) is a view showing a structure of a cathode. FIG. 3 (a) is a view showing a structure of a conventional magnet array, and FIG. 3 (b) is a view showing a structure of a magnet array applied to a sputter disclosed in this specification. 4 (a) and 4 (b) are views showing the structure of the magnet array disclosed in the present specification and the shape of the unit magnet constituting the magnet array body, respectively.

1 to 4, a sputtering apparatus 100 capable of rotating a substrate includes a chamber 110, a substrate 120, a rotation mechanism 130, a target 140, and a power source unit 150. In some other embodiments, the sputter apparatus 100 may optionally further include a movement mechanism 160. In some other embodiments, the sputtering apparatus 100 may optionally further include a magnet array 170. In some other embodiments, the sputtering apparatus 100 may optionally further include a support 180. In some other embodiments, the sputter apparatus 100 may optionally further include a power section 190.

The chamber 110 is an external and shielded space where the sputtering proceeds, and is kept in a vacuum state under a predetermined pressure to perform a thin film deposition process.

The substrate 120 has a tubular shape, is disposed within the chamber 110, and rotates about a central axis. As long as the substrate 120 can rotate around the center axis, it can have various shapes such as a cylindrical shape, a polygonal columnar shape, and a tubular shape having one end closed. As the material of the substrate 120, various materials such as a metal material, a glass material, and a magnetic material can be used.

The substrate 120 may be disposed within the chamber 110 in a variety of ways. For example, the substrate 120 can be drawn into and withdrawn from the chamber 110 through the load lock chamber 10, the unload lock chamber 20, and the like, in order to achieve the efficiency of the thin film deposition process. More specifically, the substrate 120 may be first introduced into the load lock chamber 10 through the inlet 10a. When the substrate 120 is disposed in the load lock chamber 10, the load lock chamber 10 after the closing of the inlet port 10a opens the valve 12a so that a low vacuum pump such as a rotary pump, , 12). The substrate 120 can then enter the chamber 110 after closing the valve 12a and opening the inlet 10b. As illustrated in the figure, the substrate 120 may be introduced into the chamber 110 through the first transfer part 210. The substrate 120 mounted on the first mounting table 212 can be moved laterally or longitudinally through the first transfer part 210. In addition, the substrate 120 mounted on the first mount table 212 can be raised or lowered through the first transfer unit 210. The substrate 120 mounted on the first mounting table 212 through the first transfer part 210 can be stably drawn into the chamber 110. [ After a predetermined vacuum condition is established using a low vacuum pump 12 or a high vacuum pump 112 in the chamber 110 and a thin film deposition process is completed, a thin film deposition process is performed through the outlet 20a The advanced substrate 120 can be drawn to the unloading lock chamber 20. As illustrated in the figure, the substrate 120 may be drawn to the unloading chamber 20 through the second transfer part 220. The substrate 120 mounted on the second mount 222 can move in the lateral direction or the longitudinal direction through the second transfer part 220. In addition, the substrate 120 mounted on the second platform 222 can be raised or lowered through the second transfer unit 220. The substrate 120 mounted on the second holder 222 through the second transfer part 220 can be stably drawn out from the chamber 110. [ In this case, when the substrate 110 is drawn out, the air flows backward due to a pressure difference between the chamber 110 and the unloading chamber 20 and the chamber 110 is contaminated or the low vacuum pump 12 or the high vacuum pump 112 May be damaged. In order to prevent this, the unloading lock chamber 20 may be set to a low vacuum state through the low vacuum pump 12 in advance. After the substrate 120 is taken out of the unloading lock chamber 20, the outflow opening 20a is closed and the substrate 120 can be taken out through the outflow opening 20b.

The rotation mechanism 130 rotates the substrate 120 about the central axis. The rotating mechanism 130 may include, for example, a motor (not shown) that is electrically driven to rotate the central axis. Alternatively, the rotating mechanism 130 may include a motor (not shown) and a belt (not shown). The substrate 120 may be directly driven by the motor or may be driven by the belt that receives the rotational force by the motor. The rotation mechanism 130 rotates the substrate 120 so that the film deposited on the surface of the substrate 120 by sputtering has a predetermined uniformity. The longer the time for depositing the film on the substrate 120, the more the substrate 120 can be heated by the collision with the target atoms scattered by sputtering. The substrate 120 may be rotated through the rotation mechanism 130 to prevent the substrate 120 from being damaged by heating. Conventionally, many researches have been made on a substrate moving type sputtering apparatus for moving a substrate in order to prevent damage to the substrate due to heat generated in a deposition target substrate during a deposition process. In the case of the conventional substrate movable type sputtering apparatus, thermal damage of the substrate by continuous sputtering can be minimized. However, in the case of a conventional substrate moving type sputtering apparatus, the distance between the substrate and the target changes during the movement of the substrate, thereby changing the deposition rate of the thin film deposited on the substrate. That is, the density distribution of target atoms scattered by sputtering and reaching the substrate changes according to the distance between the substrate and the target. The density distribution of the target atoms varies according to the movement of the substrate in the case of the conventional substrate moving type sputtering apparatus, and it is difficult to precisely control the uniformity of the film deposited on the substrate. Alternatively, the sputtering apparatus 100 capable of rotating the substrate disclosed herein is capable of precisely controlling the uniformity of the film deposited on the substrate 120, since the substrate 120 rotates or rotates at a predetermined position. In addition, it is possible to prevent the substrate 120 from being damaged by heating through the rotation of the substrate 120. [ In order to effectively prevent damage to the substrate 120 due to heating, a fluid passage (not shown) through which fluid can flow may be formed inside the rotation mechanism 130. The fluid flowing through the fluid transfer path can receive heat from the substrate 120 and discharge it to the outside, thereby effectively cooling the substrate 120. In the drawing, the rotating mechanism 130 arranged in the moving mechanism 160 is shown as an example.

The target 140 is disposed on one side of the substrate 120, and deposits a film on the surface of the substrate 120 by sputtering. As the material of the target 140, various metal materials, alloy materials, and oxide materials can be used. The target atoms scattered by sputtering may be deposited on the surface of the substrate 120 to form a film or may be deposited on the surface of the substrate 120 to react with reactive gas ions implanted into the chamber 110 to form a film . For example, an aluminum (Al) film may be formed on the substrate 120 when aluminum (Al) is used as the material of the target 140 and argon (Ar) gas is injected into the chamber 110. As another example, a target 140, using a material of aluminum (Al), and the substrate 120 in the case of injecting argon (Ar) gas and oxygen (O 2) gas into the chamber 110 include aluminum oxide (Al x of O y ) film can be formed. The above examples are examples for understanding, and various materials and gases other than the above-described examples may be used as the material of the target 140 and the reactive gas, respectively.

The power supply unit 150 generates a plasma in the chamber 110 by applying a voltage between the substrate 120 and the target 140. The voltage applied by the power supply unit 150 may be a DC voltage, a pulse DC voltage, an AC voltage, or the like. Through this, a film can be deposited on the substrate 120 using various materials as a target 140 regardless of whether or not the target 140 has conductivity.

A process of depositing a film on the surface of the substrate 120 in cooperation with the power source unit 150 will be described in detail as follows.

When a voltage is applied to the target 140 through the power supply unit 150 in a state where a vacuum atmosphere is formed inside the chamber 110, plasma is generated around the target 140. The plasma is formed by the gas injected into the chamber 110. In the figure, argon (Ar) and oxygen (O 2 ) are given as an example of the gas. The gas can be injected into the chamber 110 from the storage tank by adjusting the amount thereof by a regulator or the like. On the other hand, in the figure, argon (Ar) is used as a non-reactive gas and oxygen (O 2 ) is used as a reactive gas. As another example, an inert gas other than argon (Ar) may be used as the non-reactive gas, and another gas such as nitrogen (N 2 ) may be used as the reactive gas. A reactive gas may be injected into the chamber 110 to perform reactive sputtering.

Cations in the plasma discharge region, such as Ar ions, are accelerated by the electric field formed between the substrate 120 and the target 140 to travel with the target 140. As a result, the target atoms are discharged from the target 140, and the target atoms are coated on the surface of the substrate 120 to form a film. In this process, electrons in the plasma discharge region may collide with the thin film formed on the substrate 120 or the substrate 120. [ The collision of the former with the thin film formed on the substrate 120 or the substrate 120 may cause damage to the thin film and raise the temperature of the substrate 120. In order to prevent this, a magnetron sputtering method in which a permanent magnet or an electromagnet is installed on the back surface of the target 140 is used. The magnetron sputtering method can reduce the collision of electrons with the thin film formed on the substrate 120 or the substrate 120 as well as trap electrons in the region adjacent to the one side of the target 140 in the sputtering process, , For example, Ar cations. For convenience of explanation, the region adjacent to the one surface of the target 140 will be referred to as an electron trap region. When the generation of positive ions in the electron trap region is promoted, the deposition of the film formed on the substrate 120 can be accelerated by promoting the generation of scattered atoms of the target 140 by colliding with the positive ions. In addition, the uniformity of the film formed on the substrate 120 can be easily controlled through the proper arrangement of the permanent magnet or the electromagnet.

The transfer mechanism 160 may move the substrate 120 in a direction substantially parallel to the sputtered surface of the target 140. [ A substrate 120 on which a film having a desired thickness is deposited is drawn out of the chamber 110 and a substrate 120 on which a new film is desired to be deposited is transferred to the chamber 110 through the moving mechanism 160, It can be pulled in. The moving mechanism 160 may be embodied as a belt structure (not shown) driven by a motor (not shown), for example. In the drawing, a moving mechanism 160 disposed on the lifting unit 200 is shown as an example. As an example for the sake of understanding, the above example is not limited in the structure of the moving mechanism 160 as long as it can move the substrate 120 in a direction substantially parallel to the sputtered surface of the target 140.

The magnet array 170 is disposed opposite to the other surface of the target 140 and generates a magnetic field to trap electrons in the plasma into the electron trap region to increase the electron density in the electron trap region, Thereby increasing the density of the plasma. The electrons trapped in the electron trap region vortex by a magnetic field generated by the magnet array 170 and an electric field formed between the substrate 120 and the target 140. The electrons are trapped in the electron trap region by the vortex motion, and the trapped electrons collide with the gas in the chamber 110, thereby increasing the plasma density in the electron trap region. Thereby increasing the sputtering rate.

In one embodiment, the magnet arrangement 170 may include an inner magnet 172, an outer magnet 174, and a non-magnetic member 176. [ The inner magnet 172 may extend in a direction substantially perpendicular to the one side of the target 140 and may be disposed such that the N pole or S pole is opposite the target 140. The outer magnet 174 extends in a direction substantially perpendicular to the one side of the target 140 and is spaced from the inner magnet 172 to surround the inner magnet 172 and a magnetic pole opposite to the inner magnet 172 And may be disposed to face the target 140. The nonmagnetic member 176 is disposed between the inner magnet 172 and the outer magnet 174 and can function to maintain the gap between the inner magnet 172 and the outer magnet 174. [ The inner magnet 172 and the outer magnet 174 are obtained by arranging a plurality of circular permanent magnets or by arranging a plurality of rectangular permanent magnets as shown in the example of FIG. 4 (b) , And a single lump permanent magnet. Alternatively, unlike the drawings, the inner magnet 172 and the outer magnet 174 may be implemented utilizing an electromagnet. As an example for the sake of understanding, the inner magnet 172 and the outer magnet 174 may be implemented by various shapes of permanent magnets, electromagnets, and combinations thereof.

3 and 4, the structure of the magnet array 170 is shown as an example. FIG. 3 (a) is a view showing an example of the structure of a conventional magnet array body, FIG. 3 (b) is a view showing an example of the structure of a magnet array 170 applied to the sputter 100 disclosed in this specification to be. 4A and 4B are views showing examples of the structure of the magnet array 170 disclosed in the present specification and the shape of a unit magnet constituting the magnet array 170, respectively.

Referring to FIGS. 3 and 4, a magnetic field is formed between the inner magnet 172 and the outer magnet 174, which are opposite to the target 140, as shown in the drawing. The magnetic field extends through the target 140 to the chamber 110 to form a magnetic field forming the electron trap region as shown in FIG. In the case of the conventional magnet array, that is, the magnet array having a race track shape, which is shown as an example in FIG. 3 (a), electrons are likely to come out from the vicinity of the corner portion to the outside of the electron trap region. Therefore, there is a tendency that the electron density in the vicinity of the corner portion is lowered. Especially, as shown in FIG. 3 (a), when a plurality of racetrack-shaped magnet arrays are arranged in parallel to realize a large-area cathode, the tendency that the electron density in the vicinity of the corner portion is lowered is accelerated . Further, when a plurality of racetrack-shaped magnet arrays are used to realize a large-area cathode, the magnets of the magnet array used may be different from each other, which may cause a problem that the uniformity of the magnetic field can not be sufficiently satisfied. Further, in the case of a race-track-shaped magnet array, the range of the effective magnetic field is small and it is difficult to secure a range of the effective magnetic field for the large-area cathode even when a plurality of them are connected in parallel.

In order to solve such a problem, the magnet arrangement 170 used in the sputtering apparatus 100 disclosed in this specification is formed by a pattern protruding in the direction of the inner magnet 172, as shown in the example of FIG. 3 (b) Which is spaced apart from the protruding pattern of the outer magnet 174 and the outer magnet 174 having the meandering shape of the outer magnet 174 and alternately connected around the protruding pattern of the outer magnet 174, And may include an inner magnet 172. In this case, the magnet array 170 can increase the area of the electron trap region through the meandering shape, thereby realizing a large-area cathode. In other words, by using the magnetic arrangement 170 of the meander shape, electrons can make continuous cyclone movement in the region adjacent to the target 140 or in the electron trap region. Thereby increasing the density of the plasma that provides the cations used for sputtering. In addition, since the magnet array 170 having the meander shape can minimize the corner portion unlike the magnet array realized through the multiple magnet array of the race track shape, the problem caused by the decrease in the electron density in the vicinity of the corner portion Can be reduced. In addition, since the shape of the inside magnet 172 and the outside magnet 174, the spacing and the like of the magnet array 170 having the meander shape can be adjusted, the effective magnetic field range for the large area cathode can be easily secured can do.

A target 140 and a magnet array 170 may be disposed on the support 180. The target 140 may be disposed on the support 180 such that the one side of the target 140 faces the substrate 120. The magnet array 170 may be disposed on the support 180 against the other surface of the target 140. In this case, the magnet array 170 may be disposed in the support 180 such that the inner magnet 172 and the outer magnet 174 extend in a direction substantially perpendicular to the one side of the target 140. The magnet array 170 can stably apply a magnetic field to the electron trap region through the support portion 180.

The power section 190 may rotate the target 140 or the magnet array 170 or provide a tilt to the target 140 or the magnet array 170. In this case, the power section 190 acts directly on the target 140 or the magnet array 170, acts on the support 180 to indirectly rotate the target 140 or the magnet array 170, 140 or the magnet array 170. In this case,

The power unit 190 may include a rotating unit 192, a moving unit 194, and a first rotating shaft 196a. In some other embodiments, the power section 190 may optionally further include a second rotational axis 196b. In some other embodiments, the power section 190 may optionally further include an angled section (not shown).

The rotation unit 192 may rotate the target 140 or the magnet array 170 by transmitting a rotational force to the first rotation axis 196a or the second rotation axis 196b. Rotation of target 140 or magnet array 170 may be continuous or intermittent. In one example, the target 140 and the magnet array 170 may rotate together at the same speed by the rotating portion 192. As another example, the target 140 and the magnet array 170 may be rotated at different speeds by the rotating portion 192. As another example, the target 140 and the magnet array 170 may be rotated in different directions by the rotating portion 192. In this case, the rotational speeds of the target 140 and the magnet array 170 may be equal to or different from each other. The position of the erosion region on the target 140 generated in the sputtering process can be adjusted by adjusting the rotation direction or rotation speed of the target 140 and the magnet array 170. Thereby increasing the availability of the target 140 and the service life of the target 140.

The moving part 194 can adjust the position of the target 140 or the magnet array 170. That is, the moving unit 194 may simultaneously or selectively act on the first rotation axis 196a or the second rotation axis 196b to adjust the position of the target 140 or the magnet array 170. The distance between the substrate 140 and the target 140 can be adjusted by adjusting the position of the target 140 so that the density of the target atoms reaching the substrate 140 can be adjusted by scattering from the target 140. The position of the electron trap region can be adjusted by adjusting the position of the magnet array member 170. This can control the density of the plasma.

The ramp portion can adjust the angle of the target 140 or the magnet array 170 facing the substrate 140. Through which the density of target atoms reaching the substrate 140 can be controlled by scattering from the target 140.

The lift unit 200 may be connected to the rotation mechanism 130 or the movement mechanism 160 and may adjust the distance between the substrate 120 and the target 140.

On the other hand, although not shown in the figure, the sputtering apparatus 100 may include a shutter. The shutter is spaced apart from the target 140 and may be moved to face the target 140 at the time the deposition process is completed to prevent further deposition of the film on the substrate 120. The film deposited on the substrate 120 can be kept constant. In addition, the shutter can move so that the target 140 and the substrate 120 face each other after a predetermined time has elapsed after plasma is formed in the chamber 110. Thereby preventing the impurities formed on the surface of the target 140 from being scattered to the surface of the substrate 120 to maintain the purity of the film deposited on the substrate 120.

Referring back to the drawings, the operation of the sputtering apparatus 100 capable of rotating the substrate described in this specification will be described. The sputtering apparatus 100 uses a rotatable substrate 120. The substrate 120 can be rotated and moved by the rotating mechanism 130 and the moving mechanism 160. [ In this case, movement and rotation can be carried out separately or simultaneously. Since the substrate 120 can be rotated or rotated at a predetermined position, it is easy to precisely control the uniformity of the film deposited on the substrate 120. In addition, it is possible to prevent the substrate 120 from being damaged by heating through the rotation of the substrate 120. [

The sputtering apparatus 100 may also include a magnet array 170. The magnet array 170 is disposed opposite to the other surface of the target 140 and generates a magnetic field to trap electrons in the plasma into the electron trap region to increase the electron density in the electron trap region, Thereby increasing the density of the plasma. Thereby increasing the sputtering rate.

The sputter apparatus 100 may also include a power section 190 that rotates the target 140 or the magnet array 170 or provides a tilt to the target 140 or magnet array 170. The rotation direction or the rotation speed of the target 140 and the magnet array 170 is adjusted through the rotation part 192 of the power unit 190 so that the position of the erosion area on the target 140 generated in the sputtering process Can be adjusted. Thereby increasing the availability of the target 140 and the service life of the target 140. The distance between the substrate 140 and the target 140 can be adjusted through the moving part 194 of the power unit 190 to control the density of the target atoms scattered from the target 140 and reaching the substrate 140 have. Further, the position of the electron trap region can be adjusted by adjusting the position of the magnet array 170 through the moving portion 194 of the power unit 190. This can control the density of the plasma. The angle of the target 140 or the magnet array 170 facing the substrate 140 can be adjusted through the inclined portion of the power unit 190. Through which the density of target atoms reaching the substrate 140 can be controlled by scattering from the target 140.

The sputter apparatus 100 disclosed in this specification having the above-described advantages can provide an apparatus capable of a sputtering process that provides high film uniformity under high film deposition rates. In addition, the sputtering apparatus 100 disclosed in this specification is applicable to the pulse direct current sputtering system. Further, the sputtering apparatus 100 disclosed in this specification is also applicable to the AC sputtering system. Further, the sputtering apparatus 100 disclosed in this specification can increase the film deposition rate by utilizing the magnet array body 170. [

From the foregoing it will be appreciated that various embodiments of the present disclosure have been described for purposes of illustration and that there are many possible variations without departing from the scope and spirit of this disclosure. And that the various embodiments disclosed are not to be construed as limiting the scope of the disclosed subject matter, but true ideas and scope will be set forth in the following claims.

10: Load lock chamber
10a:
10b: Inlet
12: Low vacuum pump
12a: Valve
12b: valve
20: Unloading lock chamber
20a:
20b:
100: sputtering device capable of rotating substrate
110: chamber
112: High vacuum pump
120: substrate
130: Rotation mechanism
140: target
150:
160:
170: magnet array
172: inner magnet
174: outer magnet
176: Nonmagnetic member
180: Support
190:
192:
194:
196a:
196b:
200:
210: First transfer part
220: Second transfer part

Claims (6)

chamber;
A tubular substrate disposed within the chamber and rotating about a central axis;
A rotating mechanism for rotating the substrate about the central axis;
A target disposed on one side of the substrate and configured to deposit a film on a surface of the substrate by sputtering; And
And a power source for generating a plasma in the chamber by applying a voltage between the substrate and the target,
Wherein the rotating mechanism is capable of rotating a substrate by rotating the substrate so that the film deposited on the surface of the substrate by sputtering has a predetermined uniformity. The method according to claim 1,
Further comprising a moving mechanism for moving the substrate in a direction substantially parallel to the sputtered surface of the target. 3. The method according to any one of claims 1 to 3,
And a magnetic field is generated to capture electrons in the plasma in a region adjacent to the one surface of the target, hereinafter referred to as an electron trap region, to increase the electron density in the electron trap region, Further comprising a magnet arrangement to increase the density of the plasma in the electron trap region,
The magnet array
An inner magnet extending in a direction substantially perpendicular to the one surface of the target and having an N pole or an S pole opposite to the target;
An outer magnet extending in a direction substantially perpendicular to the one surface of the target and spaced apart from the inner magnet to surround the inner magnet and a magnetic pole opposite to the inner magnet is opposed to the target; And
And a non-magnetic member disposed between the inner magnet and the outer magnet, the non-magnetic member maintaining the gap between the inner magnet and the outer magnet. The method of claim 3,
Wherein the outer magnet has a pattern protruding in the direction of the inner magnet, the inner magnet is spaced apart from the protruding pattern of the outer magnet, and is alternately connected about the protruding pattern of the outer magnet, , meander)
And the substrate can be rotated by increasing the area of the electron trap region through the shape of the meander. The method of claim 3,
Further comprising a support on which the target and the magnet array are disposed,
Wherein the target is disposed on the support portion such that the one surface of the target is opposed to the substrate,
Wherein the magnet array is disposed on the support portion in opposition to the other surface of the target,
Wherein the magnet array is arranged on the support so that the inner magnet and the outer magnet extend in a direction substantially perpendicular to the one surface of the target. 6. The method of claim 5,
Further comprising a power portion for rotating the target or the magnet array or for providing a tilt to the target or the magnet array,
Wherein the power section is a sputter device capable of directing the target or the magnet array or acting on the support to rotate the target or magnet array indirectly or to provide a tilt to the target or magnet arrangement .
KR1020150092887A 2015-03-31 2015-06-30 sputter with rotatable substrate KR101773668B1 (en)

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