KR20160109171A - Plasma Cleaning device and cleaning method of substrate for blankmask using the same - Google Patents

Plasma Cleaning device and cleaning method of substrate for blankmask using the same Download PDF

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Publication number
KR20160109171A
KR20160109171A KR1020150033126A KR20150033126A KR20160109171A KR 20160109171 A KR20160109171 A KR 20160109171A KR 1020150033126 A KR1020150033126 A KR 1020150033126A KR 20150033126 A KR20150033126 A KR 20150033126A KR 20160109171 A KR20160109171 A KR 20160109171A
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South Korea
Prior art keywords
substrate
plasma
cleaning
atmospheric pressure
unit
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KR1020150033126A
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Korean (ko)
Inventor
남기수
강은태
하효준
안성용
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주식회사 에스앤에스텍
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Priority to KR1020150033126A priority Critical patent/KR20160109171A/en
Publication of KR20160109171A publication Critical patent/KR20160109171A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning In General (AREA)

Abstract

The present invention provides a plasma cleaning apparatus capable of cleaning a blank mask substrate without using a separate vacuum apparatus by using an atmospheric pressure plasma, thereby minimizing the production cost, and a method of cleaning a blank mask substrate using the plasma cleaning apparatus.
The present invention can simultaneously clean both sides of a substrate by using an atmospheric pressure plasma cleaning apparatus, and it is possible to prevent re-contamination of the upper surface of the substrate due to contaminant diffusion on the lower surface of the substrate generated in the cleaning process.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plasma cleaning apparatus and a method of cleaning a substrate using the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma cleaning apparatus and a cleaning method for a blank mask substrate using the same, and more particularly, to a plasma cleaning apparatus and a plasma cleaning method for simultaneously cleaning upper and lower surfaces of a transparent substrate for manufacturing a blank mask, And a method for cleaning a substrate for a blank mask using the same.

In a lithography process for manufacturing a flat panel display (hereinafter referred to as FPD) device or a large scale integrated circuit (LSI) device, a pattern using a photomask commonly manufactured from a blank mask Is transferred. A photomask for manufacturing an FPD device is manufactured using a transparent substrate having a relatively large size as compared with a photomask for manufacturing an LSI device with a side length of 300 mm or more.

In recent years, as FPD devices have become finer in design rule for high integration in the same manner as LSI devices having a high degree of integration, patterning of photomasks used for fine pattern formation has also been required to be finer. In order to achieve high-precision FPD devices, a method has been proposed in which a phase reversal film is formed on a blank mask and a photomask, or a hard film is added as an etching mask for a metal film.

On the other hand, the state of the surface of the transparent substrate for forming a metal film is also considered important for high-definition FPD devices. When a contaminant is present on the surface of the transparent substrate, the contaminant acts as a defect source when the thin film is formed to form a blank mask, thereby impeding the deposition of the metal film, resulting in a defect of the thin film or pattern .

Accordingly, the blank mask and the transparent substrate for the photomask are subjected to a cleaning process for removing organic substances and particles on the surface before forming a thin film such as a metal film, and the cleaning process can roughly be divided into wet cleaning and dry cleaning.

The wet cleaning is carried out using SC-1, SC-2, SPM (Piranha) or DHF (Dilute HF) according to the combination of pure water, various additives and chemical liquids, and each washing liquid may be used alone, To remove organic matter. The SC-1 cleaning solution can most effectively remove particles and organic substances on the substrate surface by using ammonia (NH 4 OH) and hydrogen peroxide (H 2 O 2 ). The SPM cleaning solution contains sulfuric acid (H 2 SO 4 ) Hydrogen peroxide (H 2 O 2 ) is used to remove organic matter from the substrate surface. However, the wet cleaning is very unstable when the cleaning solution is used at a high temperature, and problems such as re-contamination of the substrate due to the cleaning liquid and deterioration of the cleaning ability due to chemical fume in the equipment have occurred.

Dry cleaning has been developed to overcome the disadvantages of wet cleaning, and dry cleaning is advantageous in that it can prevent recontamination in the cleaning process and can be cleaned even at a low temperature, thereby stabilizing the process. Dry cleaning can be performed by UV / O 3 , laser or plasma cleaning depending on the gas used and the energy applied.

The UV / O 3 Cleaning is a photochemical decontamination method that can remove organic substances most effectively. It can remove organic substances, carbides (carbon, hydrocarbons, etc.), and protects the substrate surface by forming an oxide film on the surface after cleaning. However, there is a problem that productivity is deteriorated due to an increase in the time required for irradiation as environmental contamination and area due to the generation of ozone (O 3 ) in the equipment become wider.

Recently, a cleaning method using a plasma in a vacuum chamber has been developed, which has an effect of increasing the roughness of a large area substrate by plasma treatment on the substrate and increasing the adhesion of the thin film by increasing the hydrophilicity. However, since a separate vacuum device is required and the production cost is increased, it is not widely used for excellent cleaning effect.

In addition, the conventional plasma cleaning apparatus is mainly easy to clean the upper surface of the substrate, which makes it difficult to clean the lower surface of the substrate. Accordingly, when cleaning the upper surface of the substrate, contaminants on the lower surface are diffused and the upper surface is contaminated again.

The present invention provides a plasma cleaning apparatus capable of cleaning a substrate for a blank mask without using a separate vacuum apparatus using an atmospheric plasma.

The present invention also provides a substrate for a blank mask capable of simultaneously cleaning one surface or both surfaces of a substrate using an atmospheric pressure plasma cleaning apparatus, and preventing contaminants on the lower surface of the substrate from diffusing to the upper surface.

A plasma cleaning apparatus according to the present invention comprises a substrate fixing unit for fixing a substrate, a plasma apparatus, and an apparatus control unit, wherein the plasma apparatus is positioned above and below a substrate, Clean with a plasma.

The plasma apparatus includes a plasma generator, a gas supplier, a power supply, and an exhaust unit.

The plasma generating portion has an atmospheric pressure plasma cleaning width of 20 mm or more.

The plasma generating part has an interval of 1 mm to 100 mm from the surface of the transparent substrate.

The substrate fixing part is adjustable according to the size of the substrate.

The substrate fixing part is configured to expose upper and lower surfaces of the substrate, and the substrate fixing part has an L shape so that the upper surface is exposed.

The substrate fixing portion has a contact portion of 7 mm or less at the edge of the substrate.

The present invention provides a plasma cleaning apparatus that minimizes an increase in production cost by cleaning a substrate for a blank mask using an atmospheric pressure plasma without a separate vacuum apparatus, and a method for cleaning a substrate for a blank mask using the plasma cleaning apparatus.

In addition, the present invention can simultaneously clean one side or both sides of a substrate using an atmospheric pressure plasma cleaning apparatus, thereby preventing contamination of the top surface of the substrate due to contaminant diffusion on the bottom surface of the substrate generated during the cleaning process.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a simplified view of an atmospheric pressure plasma cleaning apparatus according to an embodiment of the present invention; FIG.
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an apparatus for cleaning an atmospheric plasma,

Hereinafter, the present invention will be described in detail with reference to the drawings, but it should be understood that the present invention is not limited to these embodiments. For example, And is not intended to limit the scope of the invention. Therefore, it will be understood by those skilled in the art that various modifications and other equivalent embodiments may be made by those skilled in the art. Accordingly, the true scope of protection of the present invention should be determined by the technical matters of the claims.

FIG. 1 is a view schematically showing an atmospheric pressure plasma cleaning apparatus according to an embodiment of the present invention, and FIG. 2 is a view schematically showing a substrate fixing section of an atmospheric pressure plasma cleaning apparatus according to an embodiment of the present invention.

Referring to FIGS. 1 and 2, a plasma cleaning apparatus 100 according to the present invention includes a substrate fixing unit 120 in which a transparent substrate 110 is disposed for cleaning, and an atmospheric plasma cleaning apparatus 130. The atmospheric pressure plasma cleaning apparatus 130 includes a gas supply unit 132, a power supply unit 134, a plasma generation unit 136, an exhaust unit 138, and a device control unit 140.

The transparent substrate 110 is made of quartz glass, synthetic quartz glass, fluorine-doped quartz glass, or the like having various sizes of 300 mm or more on one side as a substrate for manufacturing a large-area blank mask and a photomask.

The substrate fixing part 120 serves to fix the blank mask substrate 110 for cleaning and is made of various materials including metal and non-metal, but is preferably made of a non-metallic material. 2 (a) and 2 (b), the substrate fixing unit 120 may be configured to fix a vertex portion of the substrate 110, or may be configured in various ways, such as by fixing an edge portion of the substrate 110, The substrate 110 for a blank mask is movable so as to match the size of the substrate 110 as it has various sizes.

In the conventional plasma cleaning apparatus, only the upper surface of the substrate is cleaned so that the entire lower surface of the substrate forms a contact surface with the substrate fixing portion. However, in the plasma cleaning apparatus 100 according to the present invention, And has a shape that can expose the upper and lower surfaces so that the plasma can be cleaned at the same time, and preferably has an L (L) shape.

The substrate fixing unit 120 is preferably configured to have a minimum contact surface so that contaminants on the bottom surface of the substrate 110 can be cleansed together with cleaning when the transparent substrate 110 is cleaned. And preferably has a size and shape contacting within 7 mm, preferably within 5 mm.

The plasma apparatus 130 is disposed in a pair so as to face each other on the upper surface and the lower surface of the transparent substrate 110 so as to simultaneously clean the upper surface and the lower surface of the transparent substrate 110. Accordingly, as the upper and lower surfaces of the transparent substrate 110 are simultaneously cleaned by the pair of plasma devices 130, contaminants such as particles on the lower surface move to the upper surface and are prevented from acting as another contaminant. The atmospheric pressure plasma apparatus 130 can clean only one surface of the upper surface or the lower surface of the transparent substrate 110 by operating only one of the upper surface and the lower surface.

In addition, when the substrate is cleaned on both sides of the substrate by using an in-line type device, the size of the substrate has increased more than twice as the size of the substrate has increased. However, in the plasma apparatus 130 according to the present invention, the plasma generating unit 136 is positioned above and below the substrate, and the substrate or the plasma apparatus 130 is moved and cleaned, thereby enabling efficient utilization of the space.

The gas supply part 132 is a part for supplying a gas for generating the atmospheric pressure plasma and includes a reactive gas such as oxygen (O 2 ), methane (CH 4 ), nitrogen (N 2 ), helium (He) And the reactive gas and the inert gas are injected singly or in combination to generate an atmospheric pressure plasma. The gas supply unit 132 may be connected to a mass flow controller (MFC) 133 to control the supply of necessary gas appropriately. The gas supply unit 132 may supply the reactive gas and the inert gas at a flow rate of 1 sccm to 1,000 sccm Supply.

The power supply unit 134 is a part for supplying a power source for generating atmospheric pressure plasma, and can use either a direct current or alternating current method, and supplies power of 2 kW to 20 kW.

The plasma generating unit 136 generates an atmospheric pressure plasma to remove organic substances from the substrate 110 and improve the adhesion of the substrate 110 to the thin film.

In detail, the plasma generating unit 136 generates nitrogen (N 2 ) and CDA gas injected through the gas supply unit 132 and nitrogen (N) radicals having high reactivity with the voltage applied to the electrode through the power supply unit 134, (O) < / RTI > radicals. The nitrogen (N) radical exerts a physical effect on the surface of the substrate to activate an organic substance such as carbon (C) on the substrate surface and an oxygen (O) radical to an organic substance such as carbon (C) By forming a group (-OH, -RCOOH), the hydrophobic surface of the substrate is made hydrophilic and the organic matter is chemically decomposed to clean the substrate.

The discharge unit 138 serves to discharge gases such as oxygen (O) and ozone (O 3 ) generated during plasma generation to the outside of the plasma apparatus 130. The exhaust portion 138 is exhausted at a pressure of 1 Pa to 1500 Pa, preferably at a pressure of 10 Pa to 1000 Pa. When the exhaust pressure of the exhaust part 138 exceeds 1500 Pa, exhaust gas such as nitrogen (N 2 ) and CDA (clean dry air) injected for generating plasma may be exhausted and adversely affect plasma generation.

The atmospheric pressure plasma formed from the plasma generating section 136 has a cleaning width of 20 mm or more, and preferably has a cleaning width of 50 mm or more. When the plasma cleaning width is 20 mm or less, it takes a long time to perform plasma cleaning processing on a substrate having 300 mm or more on one side, resulting in lower productivity.

The plasma generating unit 136 is disposed so that the edge portions of the plasma generating unit 136 facing the surface of the transparent substrate 110 are spaced from each other by an interval of 1 mm to 100 mm. In order to maximize the cleaning power during the cleaning process, It is possible to adjust the distance from the center.

The device control unit 140 controls the substrate fixing unit 120, the gas supply unit 132, the power supply unit 134, the plasma generation unit 136, and the exhaust unit 138. The apparatus control unit 140 controls the arrangement of the substrate fixing unit 120 to match the size of the substrate 110 and controls the plasma generating unit 136, the gas supplying unit 132, the power supplying unit 134, And controls all parts for cleaning the both sides of the substrate, such as moving the plasma device 130 and operating the base 138.

Hereinafter, cleaning of both sides of a substrate using a plasma apparatus according to an embodiment of the present invention will be described in detail.

(Example)

Atmospheric pressure plasma  Evaluation of substrate characteristics by cleaning

The substrate for blank mask was processed according to each condition using the atmospheric pressure plasma cleaning apparatus according to the present invention, and the characteristics were compared and evaluated.

In Example 1, N 2 : CDA = 800 sccm: 300 sccm was injected as the feed gas, the process power was 15 kV, the exhaust gas was 1,000 Pa, and the atmospheric plasma treatment was performed for 10 minutes.

In Example 2, N 2 : CDA = 500 sccm: 300 sccm was injected into the feed gas, the process power was 15 kV, the exhaust gas was 1,000 Pa, and the atmospheric plasma treatment was performed for 10 minutes.

Comparative Example 1 is the atmospheric pressure plasma, and ultraviolet (UV / O 3) was used as a transparent substrate without a treatment, Comparative Example 2 did not have atmospheric pressure plasma treatment, an ultraviolet (UV / O 3; 185㎚: 254㎚ = 1: 5) treatment for 30 minutes was used.

Table 1 shows contact angle, surface roughness and adhesive force evaluation results for the transparent substrates for blank masks of Examples 1 to 2 and Comparative Examples 1 and 2 described above.

Example 1 Example 2 Comparative Example 1 Comparative Example 2 Contact angle (°) 7.1 5.5 35.2 12 Surface roughness (Ra) 0.85 0.81 1.3 1.08 Adhesion (kg / cm2) 145 149 55 120

Referring to Table 1, in the case of Examples 1 and 2, the contact angles were 7.1 ° and 5.5 °, which were smaller than 35.2 ° and 12 ° in Comparative Examples 1 and 2, and thus the atmospheric pressure plasma of Examples 1 and 2 It can be seen that few organic matter remains on the surface of the cleaned substrate.

Further, as a result of evaluating the surface roughness, the values of 0.85Ra and 0.81Ra in Examples 1 and 2 were better than 1.3Ra and 1.08Ra of Comparative Examples 1 and 2, which is also related to adhesive strength Thus, it can be confirmed that the adhesive strengths of Examples 1 and 2 are superior.

The cross-sectional or both-sided atmospheric pressure plasma  Electrostatic Evaluation of Substrate by Cleaning

The surface or both sides of the substrate were plasma cleaned using the atmospheric pressure plasma cleaning apparatus according to the present invention, and the static electricity of the substrate and the number of particles on the substrate and the bottom were measured. In Examples 1 and 2 and Comparative Examples 1 and 2, only the upper surface of the substrate was cleaned.

In Example 3, the top and bottom surfaces of the substrate were simultaneously plasma-cleaned under the same conditions as in Example 1, N 2 : CDA = 800 sccm: 300 sccm was injected as a supply gas, the process power was 15 kV, And subjected to atmospheric pressure plasma treatment for 10 minutes.

Table 2 shows the electrostatic and particle measurement results for the transparent substrates for the blank masks of Examples 1 to 3 and Comparative Examples 1 and 2 described above.

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Static electricity (kV) 0.09 0.05 0.02 0.22 0.17 Substrate top surface
Particle 0 ea 0 ea 0 ea 5 ea 12 ea When the substrate
Particle 7 ea 5 ea 0 ea 22 ea 17 ea

Referring to Table 2, the static electricity measurement results of Examples 1 to 3 show static electricity values of 0.02 kV to 0.09 kV, which are lower than those of Comparative Examples 1 and 2, which is lower than 0.17 kV and 0.22 kV, Of these, Example 3 exhibited lower electrostatic values than Example 1, and it was confirmed that plasma cleaning simultaneously on both sides of the substrate was superior to plasma cleaning of the cross section of the substrate.

In addition, the static electricity also affected the particles of the substrate, and 0 to 7 particles remained in Examples 1 to 3, whereas in Comparative Examples 1 and 2, 5 to 22 particles were detected and atmospheric plasma cleaning was performed We could see that few particles appeared.

While the present invention has been described with reference to the preferred embodiments, the technical scope of the present invention is not limited to the range described in the above embodiments. It will be readily apparent to those skilled in the art that various changes and modifications can be made to the embodiments described above. It is apparent from the description of the claims that the form of such modification or improvement can be included in the technical scope of the present invention.

100: Plasma cleaning device according to the present invention
110: substrate
120: substrate fixing section
130: Plasma device
132:
133: mass flow controller
134: Power supply
136: Plasma generator
138:
140:

Claims (9)

1. A plasma cleaning apparatus comprising a substrate fixing section for fixing a substrate, a plasma apparatus, and a device control section,
Wherein the plasma apparatus is located above and below the substrate, and simultaneously at least one of upper and lower surfaces of the substrate is cleaned by the atmospheric plasma.
The method according to claim 1,
Wherein the plasma apparatus includes a plasma generating unit, a gas supplying unit, a power supplying unit, and an exhaust unit.
The method according to claim 1,
Wherein the plasma generating portion has an atmospheric pressure plasma cleaning width of 20 mm or more.
The method according to claim 1,
Wherein the plasma generating portion has an interval of 1 mm to 100 mm from the surface of the transparent substrate.
The method according to claim 1,
Wherein the substrate fixing part is adjustable according to the size of the substrate.
The method according to claim 1,
Wherein the substrate fixing unit is configured to expose upper and lower surfaces of the substrate,
Wherein the substrate fixing portion has an L shape so as to expose the upper surface.
The method according to claim 1,
Wherein the substrate fixing portion has a contact portion of 7 mm or less at the edge of the substrate.
A plasma cleaning method using the plasma cleaning apparatus according to any one of claims 1 to 6.
A substrate for a blank mask cleaned using the plasma cleaning apparatus according to any one of claims 1 to 7.
KR1020150033126A 2015-03-10 2015-03-10 Plasma Cleaning device and cleaning method of substrate for blankmask using the same KR20160109171A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10135277B2 (en) 2015-11-16 2018-11-20 Twomi Co., Ltd. System and method for rapidly charging battery while considering thermal stability

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10135277B2 (en) 2015-11-16 2018-11-20 Twomi Co., Ltd. System and method for rapidly charging battery while considering thermal stability

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