KR20160107764A - Etching solution composition and manufacturing method of an array substrate for Liquid crystal display using the same - Google Patents

Abstract

The present invention relates to an etching solution composition and a method for producing an array substrate for liquid crystal display devices using the same. More specifically, the present invention relates to an etching solution composition containing persulfate; a fluorine-containing compound; inorganic acid; a cyclic amine compound; a chlorine compound; a metal salt including aurum (Au) or platinum (Pt) or a metal salt including copper (Cu); organic acid or an organic acid salt; and water. According to the present invention, the etching solution composition can integrally etch metal films and N-doped amorphous silicone layers. The present invention further relates to a method for producing an array substrate for liquid crystal display devices using the same.

Description

[0001] The present invention relates to an etching solution composition and an array substrate for a liquid crystal display using the same,

The present invention relates to an etchant composition and a method of manufacturing an array substrate for a liquid crystal display using the same. More particularly, the present invention relates to an etchant composition for forming an etchant, An organic acid or an organic acid salt, and water, and a method for producing an array substrate for a liquid crystal display device using the same.

In the case of flat panel displays such as LCDs, PDPs and OLEDs, in particular, in the case of TFT-LCDs, a single film of copper or copper alloy, or copper or copper alloy, in order to reduce the wiring resistance and increase the adhesion with the silicon insulating film, An alloy / other metal, an intermetallic alloy or a metal oxide has been widely studied. For example, a copper / molybdenum film, a copper / titanium film, or a copper / molybdenum-titanium film can form a source / drain wiring constituting a gate wiring and a data line of the TFT-LCD, It can contribute to the big screen.

A typical example of an electronic circuit for driving a liquid crystal display device is a thin film transistor (TFT) circuit. In the fabrication of a TFT-LCD, first, an etching process for laminating a metal layer with a wiring material for a gate and a source / drain electrode on a glass substrate and shaving the metal layer into a corrosive gas or solution, I will follow.

In order to prevent unwanted electrical shorting between the TFT substrate and the TFT substrate, the cut side of the etched substrate, that is, the gently tapered shape that is wider than the upper side while the etching profile is evenly dispersed .

Also, the source / drain electrodes are formed through the first and second etching processes. After the etching, the N-doped amorphous silicon layer of the lower amorphous silicon layer should be etched.

However, at present, the etching of the N-type doped amorphous silicon layer is performed by dry etching, and additional processing steps are required after etching the source / drain electrode, so that there is a problem that the processing time and cost can not be saved.

Korean Patent Laid-Open No. 10-2010-0123131 and Korean Patent Laid-Open No. 10-2012-0111636 disclose an etchant composition for etching gate and source / drain electrodes. However, the N-type doped amorphous silicon layer is further subjected to dry etching So that the process is complicated and additional costs are incurred.

Accordingly, it is necessary to develop an etching solution composition capable of batch etching the N-type doped amorphous silicon layer with the source / drain electrodes without further processing.

Korean Patent Publication No. 10-2010-0123131 Korean Patent Publication No. 10-2012-0111636

It is an object of the present invention to provide an etchant composition capable of collectively etching a metal film forming a source / drain electrode and an N-type doped amorphous silicon layer under the metal film.

It is another object of the present invention to reduce the manufacturing steps and cost of an array substrate for a liquid crystal display manufactured using the etchant composition by using the etchant composition.

In order to achieve the above object,

The present invention relates to a process for producing an etchant composition,

0.5-20% by weight persulfate,

0.01 to 2% by weight of a fluorine compound,

1 to 10% by weight of an inorganic acid,

0.5 to 5% by weight of a cyclic amine compound,

0.1 to 5% by weight of a chlorine compound,

0.01 to 5% by weight of a metal salt containing Au or Pt, or 0.2 to 1.5% by weight of a metal salt containing Cu,

0.1 to 10% by weight of an organic acid or an organic acid salt and

Wherein the etchant composition comprises a residual amount of water such that the total weight of the etchant composition is 100% by weight.

(1) forming an amorphous silicon layer on a substrate;

(2) N-type doping the surface of the amorphous silicon layer to form an N-type doped amorphous silicon layer on the surface of the amorphous silicon layer;

(3) stacking a metal film on the N-type doped amorphous silicon layer;

(4) selectively leaving a photoreactive material on the metal film; And

(5) A metal film and an N-type doped amorphous silicon layer etching method comprising collectively etching the metal film and the N-type doped amorphous silicon layer using the etchant composition of the present invention.

The present invention also provides a method of manufacturing a semiconductor device, comprising: (1) forming a gate wiring on a substrate;

(2) forming a gate insulating layer on the substrate including the gate wiring;

(3) forming an amorphous silicon layer on the gate insulating layer;

(4) N-type doping the surface of the amorphous silicon layer to form an N-type doped amorphous silicon layer on the surface of the amorphous silicon layer;

(5) forming source and drain electrodes on the N-type doped amorphous silicon layer; And

(6) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:

In the step (5), a metal film is formed on the N-type doped amorphous silicon layer, and the source and drain electrodes are formed by collectively etching the metal film and the N-type doped amorphous silicon layer with the etchant composition In addition,

Wherein the etchant composition is an etchant composition of the present invention.

The present invention also provides an array substrate for a liquid crystal display manufactured by the manufacturing method of the present invention.

The etchant composition of the present invention can collectively etch the metal film forming the source / drain electrode and the N-type doped amorphous silicon layer under the metal film.

Accordingly, it is possible to reduce the step of dry-etching the N-type doped amorphous silicon layer after forming the source / drain electrode by etching the metal film, thereby reducing the time and cost in the process.

In addition, the etching composition of the present invention has the effects of preventing the overheating phenomenon, preventing the overexcitation angle, maintaining the etching characteristic, and preventing the etching speed from being lowered due to the number of treatments.

1 is a schematic diagram showing the etching process sequence of the currently used source / drain metal film and N-type doped amorphous silicon layer and the etching process sequence of the source / drain metal film and N-type doped amorphous silicon layer of the present invention .
2 is a schematic diagram showing a cross section of a thin film transistor (TFT) array substrate.
3 is a SEM photograph of the surface of the N-type doped amorphous silicon layer etched with the etchant composition of the embodiment.
4 is a SEM photograph of the surface of the N-type doped amorphous silicon layer etched with the etchant composition of the comparative example.

Hereinafter, the present invention will be described in more detail.

The present invention relates to a process for producing an etchant composition,

0.5-20% by weight persulfate,

0.01 to 2% by weight of a fluorine compound,

1 to 10% by weight of an inorganic acid,

0.5 to 5% by weight of a cyclic amine compound,

0.1 to 5% by weight of a chlorine compound,

0.01 to 5% by weight of a metal salt containing Au or Pt, or 0.2 to 1.5% by weight of a metal salt containing Cu,

0.1 to 10% by weight of an organic acid or an organic acid salt and

To an etchant composition comprising a residual amount of water such that the total weight of the etchant composition is 100% by weight.

Conventionally, in the manufacture of an array substrate for a liquid crystal display device, an additional step of dry-etching the N-type doped amorphous silicon layer under the metal film after forming a source / drain electrode by etching the metal film with the etchant composition is required The process steps were complicated, resulting in a large amount of process time and cost.

However, the etchant composition of the present invention has the effect of reducing the processing time and cost because the metal film forming the source / drain electrode and the N-type doped amorphous silicon layer below can be etched in a batch.

In the present invention, the metal film forming the source / drain electrode is a double film composed of a copper-based metal film and a titanium-based metal film.

The copper-based metal film is a copper film or a copper alloy film, and the titanium-based metal film is a titanium film or a titanium alloy film, and the alloy film includes a nitride film or an oxide film.

Further, the metal film forming the source / drain electrode is most preferably a copper / titanium double film.

Hereinafter, each component of the etchant composition of the present invention will be described.

The persulfate contained in the etchant composition of the present invention is a main component for etching the copper-based metal film, and the persulfate is selected from potassium persulfate (K ₂ S ₂ O ₈ ), sodium persulfate (Na ₂ S ₂ O ₈ ) and ammonium persulfate ((NH ₄ ) ₂ S ₂ O ₈ ).

The persulfate is included in an amount of 0.5 to 20% by weight, preferably 5 to 15% by weight based on the total weight of the etchant composition. If the persulfate is contained in an amount of less than 0.5% by weight, the copper-based metal film is not etched or exhibits a very slow etching rate. If the persulfate is contained in an amount exceeding 20% by weight, the etch rate becomes entirely faster and it becomes difficult to control the process.

The fluorine compound contained in the etchant composition of the present invention is a main component for etching the titanium-based metal film and serves to remove residues that may be formed during etching. It also serves to etch the N-type doped amorphous silicon layer.

The fluorinated compound is a compound in which fluorine ion or polyatomic fluorine ion is dissociated in a solution. Preferably, the fluorinated compound is selected from the group consisting of ammonium fluoride, sodium fluoride, potassium fluoride, at least one selected from the group consisting of ammonium bifluoride, sodium bifluoride, and potassium bifluoride.

The fluorinated compound is contained in an amount of 0.01 to 2% by weight, preferably 0.3 to 1% by weight based on the total weight of the etchant composition. If the content of the fluorine compound is less than 0.01% by weight, the etching rate of the titanium-based metal film may be lowered and residues may be generated. If the content of the fluorine compound is more than 2% by weight, May be damaged, and the amorphous silicon layer under the metal wiring may be damaged.

The inorganic acid included in the etchant composition of the present invention serves as a copper-based metal film and a co-oxidant for etching the titanium-based metal film.

The inorganic acid preferably includes at least one selected from the group consisting of nitric acid, sulfuric acid, phosphoric acid, and perchloric acid.

The inorganic acid is included in an amount of 1 to 10% by weight, preferably 2 to 7% by weight based on the total weight of the etching solution composition. If the content of the inorganic acid is less than 1% by weight, the etch rate of the copper-based metal film and the titanium-based metal film may be lowered, resulting in poor etching profile and residue. If the content of the inorganic acid exceeds 10% by weight, Resist cracks may occur, and the wiring may be short-circuited by the penetration of the chemical liquid.

The cyclic amine compound contained in the etchant composition of the present invention has a role of controlling the etching rate of the copper-based metal film.

The cyclic amine compound may be a triazole compound, a tetrazole compound, an imidazole compound, an indole compound, a purine compound, a pyrazole compound, a pyridine compound, It is preferable to include at least one member selected from the group consisting of pyrimidine, pyrrole, pyrrolidine and pyrroline groups, , And most preferably 5-methyl tetrazole in the tetrazole system. By using the above-mentioned 5-methyltetrazole, the problem of the conventional cyclic amine compound in which precipitates are generated can be solved.

The cyclic amine compound is contained in an amount of 0.5 to 5% by weight, preferably 1 to 3% by weight based on the total weight of the etchant composition. If the content of the cyclic amine compound is less than 0.5% by weight, the etching rate of copper can not be controlled, and an overeating angle may occur. If the content of the cyclic amine compound is more than 5% by weight, The time can be prolonged, and the production efficiency can be reduced.

The chlorine compound contained in the etchant composition of the present invention serves as a co-oxidant for etching the copper-based metal film. Generally, when the angle of the metal wiring is low, it is difficult to realize the color because the electric movement is delayed. In the present invention, the angle of the metal wiring can be adjusted by including the chlorine compound.

The chlorine compound means a compound capable of dissociating into chlorine ions and includes at least one compound selected from the group consisting of hydrochloric acid (HCl), sodium chloride (NaCl), potassium chloride (KCl) and ammonium chloride (NH ₄ Cl) .

The chlorine compound is contained in an amount of 0.1 to 5% by weight, preferably 1 to 3% by weight based on the total weight of the etchant composition. If the content of the chlorine compound is less than 0.1% by weight, the etching rate of the copper-based metal film is lowered and the etching profile becomes poor. If the chlorine compound content is more than 5% by weight, , Can be lost.

The Au or Pt-containing metal salt or Cu-containing metal salt contained in the etchant composition of the present invention plays a role of controlling the catalytic role and the etching rate when the fluorine compound etches the N-type doped amorphous silicon layer do.

A metal salt containing the Au is preferred to include at least one member selected from the group consisting of AuCl, AuCl _3, HAuCl ₄ and AuI.

The metal salt containing Pt preferably includes at least one selected from the group consisting of H ₂ PtCl ₆ , PtO ₂ , and H ₆ Cl ₂ N ₂ Pt.

Metal salts including the Cu is preferred to include a copper chloride (CuCl _2), copper iodide (CuI), copper nitrate (Cu (NO _{3) 2)} and one or more selected from the group consisting of copper sulfate (CuSO ₄₎ Do.

The metal salt containing Au or Pt is contained in an amount of 0.01 to 5% by weight, preferably 0.1 to 3% by weight based on the total weight of the etchant composition. If the metal salt containing Au or Pt is contained in an amount of less than 0.01% by weight, the etching rate of the N-type doped amorphous silicon layer is too slow to be etched, and if it exceeds 5% by weight, The etching is performed outside the proper range, and the etching process becomes difficult to control.

In addition, the metal salt containing Cu is contained in an amount of 0.2 to 1.5% by weight, preferably 0.5 to 1% by weight based on the total weight of the etchant composition. If the Cu-containing metal salt is contained in an amount less than 0.2% by weight, the etching rate of the N-type doped amorphous silicon layer is too low to be etched, and if it exceeds 1.5% by weight, It is etched out of the range, and it is difficult to control the etching process.

The organic acid or organic acid salt contained in the etchant composition of the present invention prevents the etchant composition from being affected by the chelating action with the etched metal ions, thereby increasing the number of etchings of the metal layer.

The organic acid may be selected from the group consisting of acetic acid, butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, oxalic acid, pentanoic acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, lactic acid, It is preferable to include at least one selected from the group consisting of citric acid, malic acid, tartaric acid, isocitric acid, propenoic acid, iminodiacetic acid and ethylenediaminetetraacetic acid (EDTA).

The organic acid salt preferably includes at least one selected from the group consisting of sodium salts, potassium salts and ammonium salts of the organic acid.

The organic acid or organic acid salt is included in an amount of 0.1 to 10% by weight, preferably 1 to 5% by weight based on the total weight of the etchant composition. If the content of the organic acid or the organic acid salt is less than 0.1% by weight, the effect of increasing the number of treatments is not obtained. If the content is more than 10% by weight, overcorrection may occur.

The water contained in the etchant composition of the present invention is contained in a residual amount such that the total weight of the composition is 100% by weight. The water is not particularly limited, but it is preferable to use deionized water. The water is preferably deionized water having a resistivity value of 18 M OMEGA. Or more to show the degree of removal of ions in the water.

In addition, the etchant composition of the present invention may further include at least one selected from the group consisting of metal ion sequestrants and corrosion inhibitors. In addition, the additives are not limited thereto, and various other additives known in the art may be selected and added for better effect of the present invention.

The components of the etchant composition of the present invention can be prepared by a conventionally known method and are preferably used in purity for semiconductor processing.

In addition,

(1) forming an amorphous silicon layer on a substrate;

(2) N-type doping the surface of the amorphous silicon layer to form an N-type doped amorphous silicon layer on the surface of the amorphous silicon layer;

(3) stacking a metal film on the N-type doped amorphous silicon layer;

(4) selectively leaving a photoreactive material on the metal film; And

(5) a metal film and an N-type doped amorphous silicon layer etching method comprising collectively etching the metal film and the N-type doped amorphous silicon layer using the etchant composition of the present invention.

The N-type doping of the amorphous silicon layer may use an ordinary method to form an N-type doped amorphous silicon layer on the surface of the amorphous silicon layer.

The metal film is a double film composed of a copper-based metal film and a titanium-based metal film.

The copper-based metal film is a copper film or a copper alloy film, and the titanium-based metal film is a titanium film or a titanium alloy film, and the alloy film includes a nitride film or an oxide film.

Further, the metal film forming the source / drain electrode is most preferably a copper / titanium double film.

Further, in the etching method of the present invention, the photoreactive material is preferably a conventional photoresist material, and may be selectively left by a conventional exposure and development process.

In addition,

(1) forming a gate wiring on a substrate;

(2) forming a gate insulating layer on the substrate including the gate wiring;

(3) forming an amorphous silicon layer on the gate insulating layer;

(4) N-type doping the surface of the amorphous silicon layer to form an N-type doped amorphous silicon layer on the surface of the amorphous silicon layer;

(5) forming source and drain electrodes on the N-type doped amorphous silicon layer; And

(6) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:

In the step (5), a metal film is formed on the N-type doped amorphous silicon layer, and the source and drain electrodes are formed by collectively etching the metal film and the N-type doped amorphous silicon layer with the etchant composition In addition,

Wherein the etchant composition is the etchant composition of the present invention.

The N-type doping of the amorphous silicon layer may use an ordinary method to form an N-type doped amorphous silicon layer on the surface of the amorphous silicon layer.

The metal film is a double film composed of a copper-based metal film and a titanium-based metal film.

The copper-based metal film is a copper film or a copper alloy film, and the titanium-based metal film is a titanium film or a titanium alloy film, and the alloy film includes a nitride film or an oxide film.

Further, the metal film forming the source / drain electrode is most preferably a copper / titanium double film.

The source and drain electrodes of step (5) can be formed by collectively etching the metal film and the N-type doped amorphous silicon layer with the etchant composition of the present invention.

Conventionally, a source / drain electrode is formed by etching a metal film with an etchant composition and then a dry etching process is performed on the N-type doped amorphous silicon layer. In the present invention, a metal film and an N-type doped amorphous silicon layer The source / drain electrodes can be formed by batch etching, thereby shortening the manufacturing steps of the array substrate for a liquid crystal display device, thereby reducing manufacturing cost and time.

In addition, the array substrate for a liquid crystal display may be a thin film transistor (TFT) array substrate.

The present invention also relates to an array substrate for a liquid crystal display manufactured by the above manufacturing method.

The array substrate for a liquid crystal display comprises source and drain electrodes etched using the etchant composition of the present invention.

Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.

< Etchant  Composition Preparation>

Example  1 to 16 and Comparative Example  1 to 5.

The etchant compositions of Examples 1 to 16 and Comparative Examples 1 to 5 were prepared according to the compositions shown in Table 1 below, and the remaining amount of water was included so that the total weight of the etchant composition was 100% by weight.

(Unit: wt%) division SPS ABF HNO ₃ ATZ AcOH NaCl CuSO ₄ CuCl ₂ HAuCl ₄ PtO ₂ H ₂ O Example 1 10 0.5 3 1.5 3 1.5 0.2 - - - Example 2 10 0.5 3 1.5 3 1.5 0.6 - - - Example 3 10 0.5 3 1.5 3 1.5 One - - - Example 4 10 0.5 3 1.5 3 1.5 1.5 - - - Example 5 10 0.5 3 1.5 3 1.5 - 0.2 - - Example 6 10 0.5 3 1.5 3 1.5 - 0.6 - - Example 7 10 0.5 3 1.5 3 1.5 - One - - Example 8 10 0.5 3 1.5 3 1.5 - 1.5 - - Example 9 10 0.5 3 1.5 3 1.5 - - 0.2 - Example 10 10 0.5 3 1.5 3 1.5 - - One - Example 11 10 0.5 3 1.5 3 1.5 - - 3 - Example 12 10 0.5 3 1.5 3 1.5 - - 5 - Example 13 10 0.5 3 1.5 3 1.5 - - - 0.2 Example 14 10 0.5 3 1.5 3 1.5 - - - One Example 15 10 0.5 3 1.5 3 1.5 - - - 3 Example 16 10 0.5 3 1.5 3 1.5 - - - 5 Comparative Example 1 10 0.5 3 1.5 3 1.5 - - - - Comparative Example 2 10 0.5 3 1.5 3 1.5 - - - 6 Comparative Example 3 10 0.5 3 1.5 3 1.5 - - 6 - Comparative Example 4 10 0.5 3 1.5 3 1.5 0.1 - - - Comparative Example 5 10 0.5 3 1.5 3 1.5 1.7 - - -

SPS: Sodium persulfate

ABF: Ammonium bifluoride

ATZ: 5-aminotetrazole

AcOH: Acetic acid

Experimental Example  One. Etchant  Of the composition Etching  evaluation

After depositing an amorphous silicon layer (a-Si: H) on a glass substrate (100 mm x 100 mm), the surface was N-type doped. A Cu / Ti film is deposited on the N-type doped amorphous silicon layer (n ⁺ a-Si: H), and then a photoresist having a predetermined pattern is formed on the substrate through a photolithography process Then, etching processes were performed on the n ⁺ a-Si: H / Cu / Ti films using the etching composition compositions of Examples 1 to 16 and Comparative Examples 1 to 5, respectively.

(ETCHER (TFT), manufactured by SEMES) was used as the etchant, and the temperature of the etchant composition was set to about 25 ° C during the etching process. However, the optimum temperature was determined according to other process conditions and other factors can be changed. The etching time may vary depending on the etching temperature, but is normally about 100 to 500 seconds in the LCD etching process.

In this etching process, whether or not the n ⁺ a-Si: H / Cu / Ti films were collectively etched was observed using an SEM (Hitachi, model name: S-4700). The results are shown in Table 2 below.

division n ⁺ a-Si: H / Cu / Ti etching result Example 1 Batch etching Example 2 Batch etching Example 3 Batch etching Example 4 Batch etching Example 5 Batch etching Example 6 Batch etching Example 7 Batch etching Example 8 Batch etching Example 9 Batch etching Example 10 Batch etching Example 11 Batch etching Example 12 Batch etching Example 13 Batch etching Example 14 Batch etching Example 15 Batch etching Example 16 Batch etching Comparative Example 1 n ⁺ a-Si: H not etched Comparative Example 2 n ⁺ a-Si: H / Cu / Ti Overeating angle Comparative Example 3 n ⁺ a-Si: H / Cu / Ti Overeating angle Comparative Example 4 n ⁺ a-Si: H / Cu / Ti heterogeneous etching Comparative Example 5 n ⁺ a-Si: H / Cu / Ti Overeating angle

From the results of Table 2, Example 1, the etching liquid composition of to 8 n ⁺ a-Si containing metal salt containing Cu by 0.2 to 1.5% by weight relative to the etching liquid composition total weight: H / Cu / Ti film bulk etch (Fig. 3).

Also, it is confirmed that the etchant compositions of Examples 9 to 16 including the metal salt containing Au or Pt in an amount of 0.01 to 5% by weight based on the total weight of the etchant composition also etch the n ⁺ a-Si: H / Cu / (Fig. 3).

However, the etchant composition of Comparative Example 1, which does not contain a metal salt containing Au, Pt, or Cu, did not etch the n ⁺ a-Si: H film and the metal salt containing Au or Pt was added to the etchant composition in an amount of 5 The etchant compositions of Comparative Examples 2 and 3 containing more than 1 wt.% Resulted in over-etching of the n ⁺ a-Si: H / Cu / Ti film.

In Comparative Example 4 in which the metal salt containing Cu was less than 0.2 wt% based on the total weight of the etchant composition, the n ⁺ a-Si: H / Cu / Ti film was unevenly etched, It was confirmed that the etching solution composition of Comparative Example 5 containing more than 1.5% by weight based on the weight had an over-etching of the n ⁺ a-Si: H / Cu / Ti film (FIG.

Accordingly, the etchant composition of the present invention containing 0.01 to 5% by weight of metal salt containing Au or Pt in the total weight of the etchant composition, or containing 0.2 to 1.5% by weight of the metal salt containing Cu, based on the total weight of the etchant composition, The metal film and the N-type doped amorphous silicon layer under the metal film can be simultaneously etched.

Claims (18)

Based on the total weight of the etchant composition,
0.5-20% by weight persulfate,
0.01 to 2% by weight of a fluorine compound,
1 to 10% by weight of an inorganic acid,
0.5 to 5% by weight of a cyclic amine compound,
0.1 to 5% by weight of a chlorine compound,
0.01 to 5% by weight of a metal salt containing Au or Pt, or 0.2 to 1.5% by weight of a metal salt containing Cu,
0.1 to 10% by weight of an organic acid or an organic acid salt and
Wherein the etchant composition comprises a residual amount of water such that the total weight of the etchant composition is 100% by weight. The etchant composition of claim 1, wherein the persulfate comprises at least one selected from the group consisting of potassium persulfate, sodium persulfate, and ammonium persulfate. The etchant composition according to claim 1, wherein the fluorinated compound includes at least one selected from the group consisting of ammonium fluoride, sodium fluoride, potassium fluoride, ammonium fluoride, sodium fluoride, and potassium fluoride. The etchant composition of claim 1, wherein the inorganic acid comprises at least one selected from the group consisting of nitric acid, sulfuric acid, phosphoric acid, and perchloric acid. [4] The method according to claim 1, wherein the cyclic amine compound is at least one selected from the group consisting of triazole, tetrazole, imidazole, indole, pyridine, pyrazole, pyridine, pyrimidine, pyrrole, pyrrolidine and pyrroline compounds Wherein the etchant composition comprises at least one selected from the group consisting of: The etchant composition according to claim 1, wherein the chlorine compound comprises at least one selected from the group consisting of hydrochloric acid, sodium chloride, potassium chloride, and ammonium chloride. The etchant composition according to claim 1, wherein the metal salt containing Au comprises at least one selected from the group consisting of AuCl, AuCl ₃ , AuI, and HAuCl ₄ . The etchant composition according to claim 1, wherein the metal salt containing Pt comprises at least one selected from the group consisting of H ₂ PtCl ₆ , PtO ₂ , and H ₆ Cl ₂ N ₂ Pt. The etchant composition according to claim 1, wherein the metal salt containing Cu comprises at least one selected from the group consisting of copper chloride, copper iodide, copper nitrate and copper sulfate. The method of claim 1, wherein the organic acid is selected from the group consisting of acetic acid, butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, oxalic acid, pentanoic acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, At least one selected from the group consisting of glyceric acid, succinic acid, malic acid, tartaric acid, isocitric acid, propenoic acid, iminodiacetic acid and ethylenediaminetetraacetic acid,
Wherein the organic acid salt is at least one selected from the group consisting of a potassium salt, a sodium salt and an ammonium salt of the organic acid. The etchant composition of claim 1, wherein the etchant composition further comprises at least one selected from the group consisting of a sequestering agent and a corrosion inhibitor. (1) forming an amorphous silicon layer on a substrate;
(2) N-type doping the surface of the amorphous silicon layer to form an N-type doped amorphous silicon layer on the surface of the amorphous silicon layer;
(3) stacking a metal film on the N-type doped amorphous silicon layer;
(4) selectively leaving a photoreactive material on the metal film; And
(5) A method for etching a metal film and an N-type doped amorphous silicon layer, which comprises collectively etching the metal film and the N-type doped amorphous silicon layer using the etching liquid composition according to any one of claims 1 to 11 . 13. The method of claim 12, wherein the photoreactive material is a photoresist material and is selectively left by an exposure and development process. 13. The method of claim 12, wherein the metal film is a copper / titanium double film. (1) forming a gate wiring on a substrate;
(2) forming a gate insulating layer on the substrate including the gate wiring;
(3) forming an amorphous silicon layer on the gate insulating layer;
(4) N-type doping the surface of the amorphous silicon layer to form an N-type doped amorphous silicon layer on the surface of the amorphous silicon layer;
(5) forming source and drain electrodes on the N-type doped amorphous silicon layer; And
(6) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:
In the step (5), a metal film is formed on the N-type doped amorphous silicon layer, and the source and drain electrodes are formed by collectively etching the metal film and the N-type doped amorphous silicon layer with the etchant composition In addition,
Wherein the etchant composition is the etchant composition according to any one of claims 1 to 11. A method for manufacturing an array substrate for a liquid crystal display device, 16. The method according to claim 15, wherein the metal film is a copper / titanium double film. 16. The method of manufacturing an array substrate for a liquid crystal display according to claim 15, wherein the array substrate for a liquid crystal display is a thin film transistor (TFT) array substrate. The array substrate for a liquid crystal display according to claim 15.

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