KR20160101311A - Manufacturing method of micro-nano hierarchical structure - Google Patents
Manufacturing method of micro-nano hierarchical structure Download PDFInfo
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- KR20160101311A KR20160101311A KR1020150023559A KR20150023559A KR20160101311A KR 20160101311 A KR20160101311 A KR 20160101311A KR 1020150023559 A KR1020150023559 A KR 1020150023559A KR 20150023559 A KR20150023559 A KR 20150023559A KR 20160101311 A KR20160101311 A KR 20160101311A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
- B81C1/00079—Grooves not provided for in groups B81C1/00063 - B81C1/00071
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/00714—Treatment for improving the physical properties not provided for in groups B81C1/0065 - B81C1/00706
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
- B82B3/0019—Forming specific nanostructures without movable or flexible elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0095—Manufacture or treatments or nanostructures not provided for in groups B82B3/0009 - B82B3/009
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/015—Imprinting
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- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
Description
The present invention relates to a method of forming a micro-nano hierarchical structure, and more particularly, to a method of forming a micro-nano hierarchical structure capable of manufacturing a micro-nano hierarchical structure having a high degree of alignment in a large area.
A multi-scale hierarchical structure can be used for surface wettability control. The surface wettability is expressed by the water droplet contact angle on the surface. Surfaces having a contact angle of 5 DEG or less are defined as superhydrophilic surfaces. Superhydrophilic surfaces can be used in windows, mirrors or shower screens where anti-fogging, anti-fouling, self-cleaning, etc. are required. In contrast, a surface having a contact angle of 150 DEG or greater is defined as a superhydrophobic surface. The superhydrophobic surface is water repellent and self-cleaning. Such superhydrophobic surfaces can be widely applied to self-cleaning windows, waterproof fibers, anti-pollution paints, anti-snow film, anti-fingerprint film, antireflection coating, anti-corrosion coating, and separation of water and oil.
The above-mentioned surface wettability can be superhydrophilic or superhydrophobic through control of a multi-scale hierarchical structure. The multi-scale hierarchical structure can be formed through a top-down process or a bottom-up process.
The bottom-up process may be performed by a variety of techniques including self-assembly, layer-by-layer assembly, micelle aggregation, phase separation, electrochemical deposition, atmospheric plasma deposition pressure plasma (APP) deposition). This bottom-up process is easy and efficient in forming a large-scale, multi-scale hierarchical structure. In addition, the bottom-up process can produce a nanostructure having a shape size of several tens of nanometers in a hierarchical structure without using expensive and sophisticated processes. However, it is difficult to design a multi-scale hierarchical structure because the bottom-up process forms a non-oriented hierarchical structure. In addition, since the bottom-up process is difficult to precisely control geometric parameters such as the size, shape, pitch, height, etc. of a pattern when forming a micro-nano structure, its application field is limited.
The top-down process includes photolithography, mold-based lithography techniques, and surface plasma processing. Such a top-down process forms a hierarchical structure using a predetermined pattern such as a mask or a mold, so that a multi-scale hierarchical structure having various geometric structures as compared with a bottom-up process can be controlled according to a design shape. However, the top-down process has many disadvantages in preparation for the bottom-up process, so its application range is limited. For example, photolithography is expensive and has the disadvantage that it can only be applied to small, flat surfaces or certain materials. Mold-based lithography techniques are an economical and reliable method for fabricating microstructures and can provide an accuracy of about 8 nm. However, when mold-based lithography techniques are applied to nanoscale pattern formation, a high degree of skill is required to control mold-based lithography techniques to prevent damage to samples and high-quality molds. Plasma processing can be used to fabricate superhydrophobic surfaces on various substrates and materials. However, plasma treatment in a vacuum requires a lot of trial and error in order to create a surface with complex irregularities. In addition, the area of the hierarchical structure formed through plasma processing is limited by the size of the vacuum chamber.
As described above, it is difficult to economically and effectively fabricate a large-area, precise control of geometric parameters of a multi-scale hierarchical structure, especially a micro-nano hierarchical structure, by using conventional methods.
The present invention provides a method of forming a micro-nano hierarchical structure having nanoscale irregularities on a microstructure.
The present invention provides a method of forming a micro-nano hierarchical structure capable of precisely controlling the geometrical parameters of a micro-nano hierarchical structure to form a micro-nano hierarchical structure in a large area.
The present invention provides a method of forming a micro-nano hierarchical structure capable of controlling the geometric parameters of a micro-nano hierarchical structure to enable ultra-hydrophilic and super-hydrophobic implementations.
A method of forming a micro-nanostructure structure according to an embodiment of the present invention includes: forming a microstructure using mold-based lithography; And forming a nanostructure on the surface of the microstructure using atmospheric pressure plasma etching.
The mold-based lithography can include replica molding, nanoimprint lithography, and roll-to-roll imprint processes.
Wherein the step of forming the microstructure comprises the steps of: applying on a substrate a photo-curable composition comprising a photo-curable silicone compound, a photo-curable organic compound, and a photoinitiator; Pressing the photocurable composition with a master mold comprising a micropattern; And irradiating light onto the pressed photocurable composition to form the microstructures constituted by photocured patterns.
The photo-curable silicone compound may be selected from the group consisting of silsesquioxane acrylate, silsesquioxane methacrylate, silsesquioxane vinyl, silsesquioxane oxetane, silsesquioxane glycidyl ether, silsesquioxane epoxy, silicone (Si-SSQA), siliconized silsesquioxane methacrylate, siliconized siliconized silsesquioxane vinyl, siliconized silsesquioxane oxetane, siliconized silsesquioxane glycide And may include any one of diallyl ether, siliconized silsesquioxane epoxy, silicone acrylate, silicone methacrylate, silicone vinyl, silicone oxetane, silicone glycidyl ether, and silicone epoxy. The photocurable silicone compound may include at least one of a monofunctional, bifunctional, trifunctional, and multifunctional silicone compound.
The photocurable organic compound may have functional groups such as acrylate, methacrylate, vinyl, glycidyl ether, epoxy, and oxetane. The photocurable organic compound may include at least one monofunctional, bifunctional, trifunctional, multifunctional monomer or polymer.
The microstructure may be formed of a mixture of a photo-curable silicone compound and a photo-curable organic compound.
The surface roughness of the microstructure by the nanostructure can be controlled by adjusting the concentration of the photo-curable silicone compound.
The surface roughness of the microstructure formed by the atmospheric pressure plasma etching may be controlled by controlling the number of times of the atmospheric pressure plasma etching.
The layer structure including the nanostructure and the microstructure may have a superhydrophilic surface.
The layer structure including the nanostructure and the microstructure may have a superhydrophobic surface.
According to the present invention, the surface of a microstructure formed through mold-based lithography can be etched by atmospheric pressure plasma to uniformly control geometrical parameters to form a micro-nano hierarchical structure having a uniformity in a large area.
The present invention uses a mold-based lithography and a plasma etching technique capable of progressing in an atmospheric pressure atmosphere, so that mold-based lithography and plasma etching can be performed at the same time, so that a large-area micro-nano hierarchical structure can be formed in a short time.
The present invention can control the specific material concentration of the photo-curable composition used in mold-based lithography, or control the repetition times of the plasma etching to realize the geometric parameters of the micro-nano hierarchical structure as super-hydrophilic or super-hydrophobic.
1 and 2 are views for explaining a method of forming a micro-nano hierarchical structure according to an embodiment of the present invention.
3 is a view for explaining a photocurable composition according to an embodiment of the present invention.
FIGS. 4A and 4B are atomic force micrographs and scanning electron micrographs of a master mold used in mold-based lithography according to an embodiment of the present invention.
4C and 4D are scanning electron micrographs of a first duplicate and a second duplicate formed using mold-based lithography.
5A-5F are scanning electron micrographs and graphs illustrating the surface roughness of various samples.
FIGS. 6A to 6D are cross-sectional micrographs and graphs illustrating the change in surface roughness according to the photocuring composition and the number of repetitions of plasma etching. FIG.
Figures 7A-7L are scanning electron micrographs illustrating the surface roughness changes of various first replica samples having a convex lens shape.
Figures 8A-8L are scanning electron micrographs illustrating the surface roughness changes of various second duplicate samples having a concave lens shape.
9A and 9B are views for explaining the hierarchical surface characteristics after the plasma etching process.
Figures 10a-l are optical images showing the droplet contact angle after plasma etching and perfluorooctyl trichlorosilane monomolecular film treatment for various first duplicate samples.
Figures 11a-l are optical images showing the droplet contact angle after plasma etching and perfluorooctyl trichlorosilane monomolecular film treatment for various second duplicate samples.
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. It is to be noted that the technical spirit of the present invention is specifically described in accordance with the following preferred embodiments, but it is for the purpose of explanation and not for the purpose of limitation. Therefore, it will be understood by those of ordinary skill in the art that various hierarchical structures can be invented within the spirit of the invention.
The technical spirit of the present invention will become more apparent through the following drawings and detailed description, and those skilled in the art will readily understand the technical idea of the present invention. In the following description, a detailed description of known technologies related to the present invention will be omitted when it is determined that the gist of the present invention may be unnecessarily blurred. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 and 2 are views for explaining a method of forming a micro-nano hierarchical structure according to an embodiment of the present invention.
Referring to FIGS. 1 and 2, a method of forming a micro-nano hierarchical structure according to an embodiment of the present invention includes forming microstructures 101P1, 101P2, and 101P on a
The above-described mold-based lithography and atmospheric pressure plasma etching can be carried out in an atmospheric pressure atmosphere, so that they can be carried out continuously in one chamber and can be carried out at the same time. Accordingly, the embodiment of the present invention can shorten the manufacturing time of the micro-nano structure, and can form a large-area micro-nano structure.
Mold-based lithography may include nanoimprint lithography and soft lithography using a
The mold-based lithography can be performed by a roll-to-roll imprint process using a
The mold-based lithographic process comprises the steps of applying a
The
The
The atmospheric plasma etching is performed on the surface of the
1 (a) to 1 (d) show the steps of forming a microstructure of a first copy 101P1 or a second copy 101P2 using a photo-
3 is a view for explaining a photocurable composition according to an embodiment of the present invention. FIG. 3 illustrates an example of a photocurable composition to be described in the following embodiments, and the photocurable composition according to an embodiment of the present invention is not limited thereto.
Referring to FIG. 3, the photo-curable composition may be a mixture of Si-SSQA, TeEGDMS, and a photoinitiator. The photoinitiator may comprise Darocur 1173 (2-Hydroxy-2-methyl-1-phenyl-1-propanone). In the photocurable composition, the photoinitiator is fixed at a concentration of 5%, Si-SSQA is changed to a concentration of 2.5% to 30%, and TeEGDMS can be controlled in concentration depending on the concentration of Si-SSQA. Si-SSQA acts as an etching mask during atmospheric pressure plasma etching. Silsesquioxane or silicon-acrylate-based compounds containing a silicon component may be used as a material capable of acting as an etching mask. TeEGDMS is an example of one of various acrylate compounds and can be replaced by various organic acrylic compounds other than TeEGDMS. The photo-curable composition may be composed of a mixture of cation-curable silsesquioxane, a silicone compound, an organic compound, and the like. Cationic curable functional groups include glycidyl ethers, epoxies, vinyl ethers, and the like.
FIGS. 4A and 4B are atomic force micrographs and scanning electron micrographs of a master mold used in mold-based lithography according to an embodiment of the present invention. 4C and 4D are scanning electron micrographs of a first duplicate and a second duplicate formed using mold-based lithography.
Referring to FIGS. 4A and 4B, the master mold may have a concave lens shape. The master mold used in the following examples has a spacing of about 2 [mu] m and a height of about 700 nm. The geometric parameters of the master mold described above are one example, and the present invention is not limited thereto. That is, the geometric parameters of the master mold can be variously changed.
The mold-based lithography process using the master mold shown in Figs. 4A and 4B can be used to form a first replica of a convex lens shape as shown in Fig. 4C, or to form a second replica of a concave lens shape as shown in Fig. Can be formed. The second copy may be formed through a mold-based lithography process using the first copy as the master mold.
5A-5F are scanning electron micrographs and graphs illustrating the surface roughness of various samples. More specifically, Figures 5A through 5E are SEM images after performing atmospheric plasma etching on a photocured pattern by a mold-based lithography process. FIG. 5F is a graph showing a surface roughness of a nano structure measured by an atomic force microscope.
The photocured pattern associated with Figures 5A-5F includes a Si-SSQA concentration of 2.5% and a TeEG DMS concentration of 97.5%. The atmospheric pressure plasma etching according to FIGS. 5A to 5F was carried out using Ar and O 2 gas, the flow rate of Ar was fixed to 6 slm, and the flow rate of O 2 was changed for each sample as shown in Table 1 below. In addition, the atmospheric pressure plasma etching related to Figs. 5A to 5F was repeated 40 times by applying a voltage of 150W. The distance between the plasma head and the sample is 30 nm, and the moving speed of the plasma head is 12 mm / s.
Referring to FIGS. 5A to 5E, it can be seen that a nanoscale concavo-convex structure is formed on the surface of the microstructure which is photo-cured by the atmospheric pressure plasma etching treatment. Referring to FIGS. 5A to 5F and Table 1, when the flow rate of O 2 changes, the surface roughness of the nanoscale irregular structure is changed. When the flow rate of O 2 is 40 sccm, It can be seen that the roughness becomes maximum.
FIGS. 6A to 6D are cross-sectional micrographs and graphs illustrating the change in surface roughness according to the photocuring composition and the number of repetitions of plasma etching. FIG. More specifically, Figures 6A-6C are cross-sectional nuclear micrographs after atmospheric pressure plasma etching is performed on the photocured pattern by a mold-based lithography process. 6D is a graph showing the composition of the photocured pattern and the surface roughness according to the repetition number of plasma etching.
The photocured pattern associated with Figures 6A-6C includes a 2.5% concentration of Si-SSQA and a 97.5% concentration of TeEGDMS. Figure 6a to the atmospheric pressure plasma etching related to Figure 6d was carried out using Ar and O 2 gas, the flow rate of Ar was fixed at 6 slm, the flow rate of O 2 was fixed to 40 sccm. The number of repetitions of atmospheric pressure plasma etching was varied for each sample as shown in Table 2 below.
6A to 6D and Table 2, it can be seen that the surface roughness increases as the Si-SSQA concentration is lower and the number of repetitions of atmospheric plasma etching is higher. That is, the surface roughness of the microstructure can be controlled by adjusting the concentration of the photo-curable silicone compound or the number of times of the atmospheric pressure plasma etching.
Figures 7A-7L are scanning electron micrographs illustrating the surface roughness changes of various first replica samples having a convex lens shape. More specifically, FIGS. 7A-7L are scanning electron micrographs after atmospheric pressure plasma etching for a first copy of a microbolic lens shape formed using mold-based lithography.
The first replicas related to Figures 7A-7L are microstructures consisting of photocured patterns comprising Si-SSQA and TeEGDMS. The Si-SSQA concentrations of the first replicates were varied on a sample-by-sample basis as shown in Table 3 below. The concentration of TeEGDMS varies with the concentration of Si-SSQA. 7A-7I were performed using Ar and O 2 gas, the flow rate of Ar was fixed at 6 slm, and the flow rate of O 2 was fixed at 40 sccm. The number of repetitions of atmospheric plasma etching was varied for each sample as shown in Table 3 below.
Figures 8A-8L are scanning electron micrographs illustrating the surface roughness changes of various second duplicate samples having a concave lens shape. More specifically, FIGS. 8A-8L are SEM images after atmospheric pressure plasma etching for a second replica of the micro-concave lens shape formed using mold-based lithography.
The second replicas related to Figures 8A-8L are microstructures made up of photocured patterns comprising Si-SSQA and TeEGDMS. The Si-SSQA concentration of the second replicates was varied on a sample-by-sample basis as shown in Table 3 below. The concentration of TeEGDMS varies with the concentration of Si-SSQA. The atmospheric pressure plasma etching according to FIGS. 8A to 8L was performed using Ar and O 2 gas, the flow rate of Ar was fixed at 6 slm, and the flow rate of O 2 was fixed at 40 sccm. The number of repetitions of atmospheric plasma etching was varied for each sample as shown in Table 3 below.
7A to 7L and 8A to 8L, atmospheric pressure plasma etching is performed on microstructures containing various concentrations of Si-SSQA formed through mold-based lithography to form nanoscale uneven nano-structures on the microstructure Micro-nano hierarchical structure can be formed.
Referring to Table 3, FIG. 7A to FIG. 7L and FIG. 8A to FIG. 81, it can be seen that the surface roughness of the micro-nano hierarchical structure increases as the Si-SSQA concentration is lower and the repetition rate of the atmospheric pressure plasma etching is higher have.
9A and 9B are views for explaining the hierarchical surface characteristics after the plasma etching process. More specifically, FIG. 9A is an optical image after dropping water droplets on a first replica subjected to atmospheric pressure plasma etching one month after the atmospheric pressure plasma etching treatment for the first replica of the micro-convex lens shape. 9B is a graph of an energy dispersive X-ray spectrometer after atmospheric plasma treatment of a second replica composed of 5Si-SSQA / 95TeEGDMA.
9A, after the atmospheric pressure plasma etching treatment, the
Figures 10a-l are optical images showing the droplet contact angle after plasma etching and perfluorooctyl trichlorosilane monomolecular film treatment for various first duplicate samples. More specifically, the first replica samples related to Figs. 10A-101 are microstructures having a convex lens shape formed using mold-based lithography.
Figures 11a-l are optical images showing the droplet contact angle after plasma etching and perfluorooctyl trichlorosilane monomolecular film treatment for various second duplicate samples. More specifically, the second replica samples related to Figs. 11A-11L are microstructures having a concave lens shape formed using mold-based lithography.
The first and second replica samples in Figures 10A-10L and 11A-11L are microstructures consisting of photocured patterns comprising Si-SSQA and TeEGDMS. The Si-SSQA concentrations of the first and second replica samples differ from sample to sample as in Table 3 above. The concentration of TeEGDMS varies with the concentration of Si-SSQA. Atmospheric pressure plasma etching was performed using Ar and O 2 gas, Ar flow rate was fixed at 6 slm, and O 2 flow rate was fixed at 40 sccm. The repetition times of the atmospheric pressure plasma etching are different for each sample as shown in Table 3 above.
As shown in FIGS. 10A to 10L and 11A to 11L, the contact angle of water is higher for the first copy and the second copy, as the Si-SSQA concentration is lower and the number of repetitions of the atmospheric pressure plasma etching is larger, Lt; RTI ID = 0.0 > concave < / RTI > duplicate than the convex first duplicate. In particular, the second duplicate samples containing less than 10% Si-SSQA all show superhydrophobicity. The results show that the surface roughness of the micro-nano hierarchical structure is high, and the contact angle increases as the contact area between water and the micro-nano hierarchical structure is narrowed. It can be seen that various uniform geometric parameters can be designed by controlling the concentration of Si-SSQA and the repetition frequency of atmospheric plasma etching. In addition, the surface of the micro-nano hierarchical structure can be super-hydrophilic or super-hydrophobic by controlling the concentration of Si-SSQA and the repetition frequency of the atmospheric plasma etching in forming the micro-nano hierarchical structure.
101: Photocurable composition 102: Master mold
103: light source 104: substrate
105: Atmospheric pressure plasma head
Claims (10)
And forming a nanostructure on the surface of the microstructure using atmospheric pressure plasma etching.
Wherein said mold-based lithography includes replica molding, nanoimprint lithography, and roll-to-roll imprinting processes.
The step of forming the microstructure
Applying a photo-curable composition comprising a photo-curable silicone compound, a photo-curable organic compound, and a photoinitiator onto a substrate;
Pressing the photocurable composition with a master mold comprising a micropattern; And
And irradiating light onto the photo-curable composition that has been pressed to form the microstructure constituted by a photocured pattern.
The photo-curable silicone compound
Silsesquioxane acrylate, silsesquioxane acrylate, silsesquioxane acrylate, silsesquioxane methacrylate, silsesquioxane methacrylate, silsesquioxane vinyl, silsesquioxane oxetane, silsesquioxane glycidyl ether, silsesquioxane epoxy, (Si-SSQA), siliconized silsesquioxane methacrylate, siliconized siliconized silsesquioxane vinyl, siliconized silsesquioxane oxetane, siliconized silsesquioxane glycidyl ether, siliconized silicate Wherein the epoxy resin comprises any one of epoxy resin, sesquioxane epoxy, silicone acrylate, silicone methacrylate, silicone vinyl, silicone oxetane, silicone glycidyl ether,
A method for forming a micro-nano hierarchical structure comprising at least one of monofunctional, bifunctional, trifunctional, and multifunctional silicone compounds.
The photocurable organic compound
Acrylate, methacrylate, vinyl, glycidyl ether, epoxy, oxetane and the like,
A method for forming a micro-nano hierarchical structure comprising at least one monofunctional, bifunctional, trifunctional, multifunctional monomer or polymer.
Wherein the microstructure is formed of a mixture of a photo-curable silicone compound and a photo-curable organic compound.
And adjusting the concentration of the photo-curable silicone compound to adjust the surface roughness of the microstructure by the nanostructure formed by the atmospheric pressure plasma etching.
And adjusting the number of times of the atmospheric pressure plasma etching to adjust the surface roughness of the microstructure by the nanostructure formed by the atmospheric pressure plasma etching.
Wherein the hierarchical structure comprising the nanostructure and the microstructure has a superhydrophilic surface.
Wherein the hierarchical structure comprising the nanostructure and the microstructure has a superhydrophobic surface.
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