KR20160094583A - In-Cell Touch Type Display Device and Method for Manufacturing the same - Google Patents

Abstract

The present invention discloses an in-cell touch type display device and a method of manufacturing the same. According to the present invention, the disclosed in-cell touch type display device includes a substrate in which a plurality of pixel areas (P) are defined, and a plurality of touch blocks are defined, wherein the touch blocks have some of the pixel areas (P) belonging to one group. The display device includes a gate line and a data line crossing each other to define each pixel area (P), a thin film transistor provided in an intersection between the data line and the gate line, a first protective layer provided on the thin film transistor, a touch wire overlapping with the data line, a second protective layer provided on the touch wire, and a common electrode and a pixel electrode provided on the second protective layer while overlapping with each other. Accordingly, the in-cell device is formed on the substrate in the manufacturing process of the display device, so that the manufacturing process can be simplified and manufacturing costs can be reduced.

Description

[0001] The present invention relates to an in-cell touch-type display device and a method of manufacturing the same.

The present invention relates to an in-cell touch-type display device, and more particularly, to an in-cell touch-type display device having a touch function built in a display device and a method of manufacturing the same.

[0002] As portable electronic devices such as mobile communication terminals and notebook computers are developed, a demand for a display device that can be applied to the portable electronic devices is gradually increasing. Among them, a liquid crystal display device The application field is expanding due to the advantages of the technology, the ease of driving means, the high image quality and the large screen realization.

A general liquid crystal display device includes a lower substrate and an upper substrate bonded together to face each other with a liquid crystal layer sandwiched therebetween. The transmissivity of light passing through each liquid crystal layer of each of a plurality of pixels is controlled according to a data voltage, As shown in Fig. 2. Description of the Related Art In recent years, a touch screen capable of inputting information directly to a screen by using a finger or a pen has been applied in place of an input device such as a mouse or a keyboard that has been conventionally applied as an input device of a liquid crystal display device.

The touch screen may include a monitor such as navigation, an industrial terminal, a notebook computer, a financial automation device, a game machine, a portable terminal such as a mobile phone, MP3, PDA, PMP, PSP, portable game machine, DMB receiver, Appliances such as a microwave oven, a microwave oven, a microwave oven, a microwave oven, a microwave oven, a microwave oven, a microwave oven, a microwave oven, a microwave oven, a microwave oven,

However, since the touch screen type display device is manufactured by manufacturing a touch screen (touch panel) separate from the display panel, the process is complicated and the manufacturing cost is increased.

In addition, since the touch screen type display device attaches the touch screen to the entire surface of the display panel, there is a limit in manufacturing the display device in the form of light weight and short time.

In addition, the touch screen type display device has a limitation in reducing a bezel area by providing a plurality of signal lines outside the display panel in order to supply a sensing signal to the touch screen.

An object of the present invention is to provide an in-cell touch-type display device and a method of manufacturing the in-cell touch-type display device in which an in-cell touch device is directly formed on a substrate in a display device manufacturing process to simplify the process and reduce the manufacturing cost.

It is another object of the present invention to provide an in-cell touch-type display device and a method of manufacturing the in-cell touch-type display device, which can reduce a bezel area and a bezel area by forming an inshell touch device directly inside a display panel.

According to an aspect of the present invention, there is provided an in-cell touch-type display device including a plurality of pixel regions, a plurality of pixel regions, A gate line and a data line intersecting each other to define each pixel region (P), and arranged in an intersecting region of the gate line and the data line And a second protective layer disposed on the touch wiring, the second protective layer including a first protective layer disposed on the thin film transistor, the second protective layer including a touch wiring arranged to overlap with the data line, And a common electrode and a pixel electrode disposed on the second passivation layer so as to overlap with each other, thereby forming an inshell touch element directly on the substrate in a display device manufacturing process, And the manufacturing cost is reduced.

A method of manufacturing an in-cell touch-type display device according to the present invention is characterized in that a plurality of pixel regions (P) are defined and a plurality of pixel regions (P) of a plurality of pixel regions Providing a substrate on which a touch block is defined, forming gate lines and data lines cross-arranged to define each pixel region, and forming a thin film transistor in an intersection region of the gate line and the data line Forming a first protective layer on the substrate on which the thin film transistor is formed and forming a touch wiring on the first protective layer so as to overlap with the data line, And a step of forming a common electrode and a pixel electrode on the second passivation layer, thereby forming an in-cell touch element directly inside the display panel So that it is possible to reduce the area of bezel thinning and the bezel area.

The in-line touch-type display device and the method of manufacturing the same according to the present invention have the effect of simplifying the process and reducing the manufacturing cost by forming the in-cell touch device directly on the substrate in the display device manufacturing process.

In addition, since the in-cell touch display device and the method of manufacturing the same according to the present invention directly form an inshell touch device in the display panel, it is possible to reduce the area of bezel thinning and bezel.

1 is a schematic view illustrating an in-cell touch display device according to an embodiment of the present invention.
FIG. 2 is a view showing a structure of a touch block and a touch wiring in FIG.
3 is a pixel cross-sectional view of an in-cell touch display device according to an embodiment of the present invention.
4A to 4E are views showing a process of manufacturing an in-line touch display device according to the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if a temporal posterior relationship is described by 'after', 'after', 'after', 'before', etc., 'May not be contiguous unless it is used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

Further, the embodiment of the present invention can be applied to both flat panel display devices. Here, the case of a liquid crystal display device, particularly a Fringe Field Switching Mode liquid crystal display device, will be mainly described.

FIG. 1 is a schematic view illustrating an in-cell touch-type display device according to an embodiment of the present invention, and FIG. 2 is a diagram illustrating a structure of a touch block and a touch wiring in FIG.

1 and 2, the in-line touch-type display device 100 according to the present invention includes a touch-display panel 110 having an active area 160 on which a screen is displayed, First and second gate drivers 120a and 120b, a data driver 130, and a mux portion 140 disposed along the periphery of the first gate driver 120a and the second gate driver 120b.

The touch display panel 110 is divided into an active region 160 corresponding to the display region and a non-display region around the display region, and the first and second gate drivers 120a and 120b, (130) and a mux portion (140) are disposed.

Although not shown in the figure, the touch driver may be formed as one chip together with the data driver 130. [

The touch display panel 110 may be formed of an in-cell touch type that can detect a touch by implementing a plurality of touch blocks (TB) in a liquid crystal display panel.

The data driver 130 converts a video signal DATA input from a timing control IC disposed in an external system (not shown) into digital video data R, G, and B for each frame, R, G, B) into an analog data voltage and supplies the analog data voltage to the touch display panel 110.

The first and second gate drivers 120a and 120b may be formed on a lower substrate (not shown) of the touch display panel 110 in a GIP (Gate In Plane) manner. As another example, the gate driver may be formed in such a manner that a separate driver IC is mounted on a printed circuit board (PCB). The gate driver generates a scan signal (gate drive signal) for driving the thin film transistor (TFT) formed on each pixel of the touch display panel 110 based on the control signal from the data driver 130, To the panel (110).

The active area 160 of the touch display panel 110 includes a plurality of pixel areas P and a part of the plurality of pixel areas P is divided into blocks to be divided into touch blocks TB.

Accordingly, the active area 160 is divided into a plurality of touch blocks TB, and the common electrode 180 is formed to correspond to each of the touch blocks TB. A touch wiring 170 for detecting a change in capacitance of a capacitance which is changed when touching the common electrode 180 separated by the touch block TB is transmitted to the sensing circuit through the common electrode 180, And is disposed under the electrode 180.

In addition, the common electrode 180 separated by the touch block TB and the touch wirings 170 are selectively connected.

That is, when the touch wiring 170 is connected to one of the touch blocks TB, the common electrode 180 located within the first touch block, and the touch contact unit C, And is not connected to the common electrode 180 of the other touch block TB other than the common electrode 180 of the block.

The touch wirings 170 are independently connected to the common electrode 180 disposed in each of the touch blocks TB. In the display period, a common voltage is supplied to each pixel region through the touch wirings 170 , The touch sensing signal is supplied in the non-display period to detect whether or not the touch is made.

The touch sensing signal supplied through the touch wiring 170 may be a plurality of clock signals CLK. When a user touches the display area using a finger, Touch capacitances are formed between the touch capacitances according to the touch of the user and the reference capacitances are compared with each other to detect the touch position of the user, and operations according to the detected touch positions are performed.

At this time, the coordinates of the portion where the user's touch is generated are recognized through comparison of the touch capacitance and the reference capacitance, and the operation represented by the coordinates of the touch generation portion is performed.

Accordingly, the touch-in-cell type liquid crystal display device 100 including the array substrate according to the embodiment of the present invention displays an image by supplying a common voltage to the common electrode 180 during a display period for displaying an image, The common electrode 180 is used as a touch electrode for touch detection of a user.

3 is a pixel cross-sectional view of an in-cell touch display device according to an embodiment of the present invention.

Referring to FIG. 3 together with FIG. 3, an in-line touch in-cell type liquid crystal display device according to an embodiment of the present invention includes a plurality of gate lines 103 and a plurality of data lines 230, And a plurality of pixel regions P are defined.

Also, a plurality of touch blocks (TB) are defined by grouping some pixel regions in the plurality of pixel regions (P).

A thin film transistor TFT is disposed in an intersection region of the gate line (not shown) and the data line 230 and a pixel electrode 260 and a common electrode 180 are disposed in each pixel region P.

As described above, the common electrode 180 is patterned in units of touch blocks (TB), and one common electrode 180 is common to a plurality of pixel regions P included in the touch block TB Is used.

The common electrode 180 has a predetermined open (OP) region in the thin film transistor (TFT) region in order to reduce the parasitic capacitance formed between the thin film transistor TFT and the common electrode 180.

Therefore, the common electrodes 180 are arranged separately in units of one touch block (TB), and have a predetermined open (OP) region in a region corresponding to the thin film transistor (TFT) region of the pixel region P .

A light shield layer 200 is disposed on a TFT area of the array substrate 101 and a buffer layer 105 is disposed on the light shield layer 200. A semiconductor layer 113 composed of a first semiconductor region 113a forming a channel and a second semiconductor region 113b doped with impurities at high concentration on both sides of the first semiconductor region 113a; A gate insulating film 106 disposed on the semiconductor layer 113, a gate electrode 120 disposed on the gate insulating film 106 corresponding to the semiconductor layer 113, A thin film transistor (TFT) including an insulating film 123 and source and drain electrodes 133 and 136 electrically connected to the second semiconductor layer 113b region through a contact hole is disposed.

Although a thin film transistor (TFT) of a top gate structure is shown in the drawing, it may be implemented as a bottom gate thin film transistor (TFT).

A first passivation layer 223 is disposed on the array substrate 101 on which the TFTs are disposed and a second passivation layer 119 is disposed on the first passivation layer 223.

A touch wiring 170 is disposed between the first passivation layer 223 and the second passivation layer 119. The touch wiring 170 overlaps the data line 230, TB), the touch wiring 170 is connected to the common electrode 180. In this case, C is a touch contact portion, which is a region where the common electrode 180 of the touch block (TB) unit and the touch wiring 170 are connected.

In the region A, the touch wiring 170 overlaps the data line 230. The touch wiring 170 and the common electrode 180 are overlapped with each other except for the touch contact portion C, . The touch wiring 170 overlapped on the source electrode 133 shown in FIG. 3 is not electrically connected to the upper common electrode 180 and the touch wiring 170, unlike in the touch contact area C .

As described above, the common electrode 180 is integrally formed so as to correspond to each touch block TB, but has a predetermined open (OP) region in the thin film transistor (TFT) region of each pixel region.

A third passivation layer 182 is disposed on the common electrode 180 and a pixel electrode 260 is disposed on the third passivation layer 182. The pixel electrode 260 is electrically connected to the drain electrode 126 through a contact hole formed in a region of the drain electrode 136.

The pixel electrode 260 is formed in a plurality of slit bars in the pixel region P. [

As described above, according to the present invention, there is an advantage that an in-cell touch-type display device can be realized by adding only a process of forming a thin film transistor and then forming a touch wiring 170 in a manufacturing process of a liquid crystal display device.

In addition, in the present invention, the touch wiring 170 can be formed like the gate line or the data line 230, and the touch sensing can be performed through the pad at the edge of the touch wiring 170, It is possible to reduce the bezel area.

4A to 4E are views showing a process of manufacturing an in-line touch display device according to the present invention.

Referring to Figs. 4A to 4E together with Fig. 2, an array substrate 101 formed of a transparent insulating substrate is divided into a display region having a plurality of pixel regions and a non-display region around the display region, A plurality of pixel blocks (P) are defined as a group and a plurality of touch blocks (TB) are defined.

As shown in the figure, a light blocking layer 200 is formed in a thin film transistor region of a pixel region P having a metal film formed on the array substrate 101. As described above, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is formed on the array substrate 101 on which the light blocking layer 200 is formed to form the buffer layer 105.

When the amorphous silicon is recrystallized from polysilicon, the buffer layer 105 may be formed of alkali ions such as potassium ions (K +), sodium ions (K +), and the like, which are present in the array substrate 101 due to heat generated by laser irradiation or heat treatment. Ion (Na < + >) may be generated. In order to prevent the film characteristic of the semiconductor layer made of polysilicon from being deteriorated by such an alkali ion. At this time, the buffer layer 105 may be omitted.

Next, a pure amorphous silicon layer (not shown) is formed on the buffer layer 105 by depositing pure amorphous silicon, and an excimer laser annealing (ELA) method using a excimer laser, a sequential lateral solidification (SLS) crystallization method, The amorphous silicon layer (not shown) is crystallized into a polysilicon layer (not shown) by performing a crystallization process of any one of AMFC and Alternating Magnetic Field Crystallization (AMFC).

Thereafter, a mask process is performed to pattern the polysilicon layer (not shown) to form a semiconductor layer 113 of a pure polysilicon state on the light blocking layer 200.

However, the semiconductor layer 113 may be formed of an oxide semiconductor layer. That is, it may be composed of an amorphous oxide containing at least one of indium (In), zinc (Zn), gallium (Ga), and hafnium (Hf). For example, when a Ga-In-Zn-O oxide semiconductor is formed by a sputtering process, each target formed of In2O3, Ga2O3, and ZnO may be used, or a single target of Ga-In-Zn oxide may be used. When the hf-In-Zn-O oxide semiconductor is formed by a sputtering process, each target formed of HfO 2, In 2 O 3, and ZnO may be used, or a single target of Hf-In-Zn oxide may be used.

An inorganic insulating material such as silicon oxide (SiO 2) or silicon nitride (SiN x) is deposited on the semiconductor layer 113 of the pure polysilicon to form a gate insulating film 106.

Next, a metal material such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (MoTi) A first metal layer (not shown) having a single layer or a multilayer structure is formed as a material.

Thereafter, the first metal layer (not shown) is masked and patterned to form gate electrodes 120 corresponding to the central portions of the respective semiconductor layers 113, and at the same time, the gate electrodes 120 are formed on the gate insulating film 106, (Not shown) connected to the gate electrode 120 formed in the device region and extending in one direction is formed at the boundary of the region P.

At this time, a gate link line (not shown) connected to one end of the gate line is formed in the non-display region, and a gate pad line (not shown) connected to one end of the gate line (Not shown).

Then, impurities are doped on the entire surface of the array substrate 101 by using each of the gate electrodes 120 as a blocking mask so that the impurity is doped in a portion of the semiconductor layer 113 located outside the gate electrode 120 Doped second semiconductor region 113b and a portion corresponding to the gate electrode 120, which is blocked by doping of the impurity, forms a first semiconductor region 113a of pure polysilicon.

Then, an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiO2) is deposited on the entire surface of the semiconductor layer 113 divided into the first and second semiconductor regions 113a and 113b, An insulating film 123 is formed.

Then, the interlayer insulating layer 123 is patterned to form contact holes exposing the second semiconductor regions 113b of the semiconductor layers 113, respectively.

(Al), an aluminum alloy (AlNd), copper (Cu), a copper alloy, molybdenum (Mo), or moly titanium (MoTi) is formed on the array substrate 101 on which the contact holes are formed. Or a second metal layer (not shown) of a single layer or multilayer structure is formed as two or more materials.

Subsequently, the metal layer (not shown) is patterned to form source and drain electrodes 133 and 136 which are in contact with the second semiconductor region 113b through the contact hole and are spaced apart from each other.

At the same time, a data line 230 connected to the source electrode 133 of the thin film transistor and crossing the gate line (not shown) is formed on the interlayer insulating layer 123 at the boundary of the pixel region P.

A data link line (not shown) connected to the data line 230 is formed on the interlayer insulating layer 123 in the non-display area. The data link line (not shown) is formed on the interlayer insulating layer 223, A data pad electrode (not shown) is formed.

As described above, when the source electrode 133 and the drain electrode 136 are formed on the array substrate 101, the first protective film 223 is formed on the entire surface of the array substrate 101.

A metal film is formed on the array substrate 101 on which the first protective film 223 is formed and a touch wiring 170 is formed to overlap the source electrode 133 and the data line 230 according to a mask process.

The touch wiring 170 is electrically connected to the common electrode 180 of each touch block TB as shown in FIG.

As described above, when the touch wiring 170 is formed on the array substrate 101, an insulating material such as photo acryl or benzocyclobutene (BCB) is formed on a region of the array substrate 101 excluding the pad portion. To form a second protective layer 119 having a flat surface.

A part of the first passivation layer 223 and the second passivation layer 119 corresponding to the drain electrode 136 of the thin film transistor are removed so that a part of the drain electrode 136 is exposed, . At this time, a contact hole is formed in the second passivation layer 119 corresponding to the touch wiring 170.

As described above, when the contact hole is formed on the second passivation layer 119, a transparent conductive material film is formed on the entire surface of the array substrate 101, as shown in FIG. 4D. The transparent conductive material layer may be a transparent conductive material such as tin oxide (TO), indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide have.

As described above, when the transparent conductive material layer is formed, the common electrode 180 is formed on the second passivation layer 119 according to a mask process. The common electrode 180 is electrically connected to the lower touch wiring 170 through a contact hole formed in the touch contact area C.

Therefore, when the display device is touched, the capacitance is changed between the touching means (e.g., a finger or a pen) and the common electrode 180 and is recognized through the touch wiring 170, Detect.

4E, when the common electrode 180 is formed on the array substrate 101, an insulating material is formed on the entire surface of the array substrate 101 to form the third protective layer 182, . Then, a contact hole is formed in the third passivation layer 182 corresponding to the drain electrode 136.

Then, a transparent conductive material layer is formed on the entire surface of the array substrate 101, and a pixel electrode 260 is formed on the third passivation layer 182 according to a mask process.

The transparent conductive material layer may be a transparent conductive material such as tin oxide (TO), indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide have.

The in-line touch-type display device and the method of manufacturing the same according to the present invention have the effect of simplifying the process and reducing the manufacturing cost by forming the in-cell touch device directly on the substrate in the display device manufacturing process.

In addition, since the in-cell touch display device and the method of manufacturing the same according to the present invention directly form an inshell touch device in the display panel, it is possible to reduce the area of bezel thinning and bezel.

100: Insel-touch display device
160: Active area
110: Touch display panel
120a: a first gate driver
120b: second gate driver
130: Data driver
140: Muppets
170: Touch wiring
180: common electrode

Claims (8)

A substrate on which a plurality of pixel regions (P) are defined and on which a plurality of touch blocks having a certain group of pixel regions (P) among the plurality of pixel regions (P) are defined;
A gate line and a data line cross-arranged to define each pixel region (P);
A thin film transistor disposed at a crossing region of the gate line and the data line;
A first protective layer disposed on the thin film transistor;
A touch wiring arranged to overlap with the data line;
A second protection layer disposed on the touch wiring; And
And a common electrode and a pixel electrode arranged on the second passivation layer so as to overlap each other.
The in-line touch-type display device according to claim 1, wherein the common electrodes are disposed in units of the touch blocks.
The in-line touch display device of claim 2, wherein the touch wiring is electrically connected to the common electrode in units of the touch block.
The in-cell touch-type display device according to claim 1, wherein the common electrode and the pixel electrode overlap each other with a third protective layer interposed therebetween.
Providing a substrate on which a plurality of pixel regions (P) are defined and a plurality of touch blocks having a certain group of pixel regions (P) among the plurality of pixel regions (P) are defined;
Forming gate lines and data lines cross-arranged to define the respective pixel regions, and forming thin-film transistors at intersections of the gate lines and the data lines;
Forming a first protective layer on a substrate on which the thin film transistor is formed, and forming a touch wiring on the first protective layer so as to overlap with the data line; And
Forming a second protective layer on the substrate on which the touch wiring is formed, and forming a common electrode and a pixel electrode on the second protective layer.
6. The method of claim 5, further comprising forming a third passivation layer between the common electrode and the pixel electrode.
6. The method of claim 5, wherein the touch wiring is electrically connected to the common electrode in units of the touch block.
The method as claimed in claim 7, wherein the common electrode is divided into individual touch block units.

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