KR20160085432A - Manufacturing method of substrate graphene growth and substrate graphene growth and manufacturing device - Google Patents

Abstract

Provided are a manufacturing method of substrate grown graphene, substrate grown graphene, and an electronic part comprising the same. The manufacturing method of substrate grown graphene of the present invention comprises the following steps of: a. arranging a metal layer on a substrate; b. providing an etching gas and a carbon-containing gas, and conducting electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD); c. supplying an etching gas for the metal layer when supplying the carbon-containing gas, and growing graphene on the metal layer; and d. continuously conducting ECR-CVD from the process of the step c, and growing graphene on the substrate without the metal layer by continuously removing all of the metal in the metal layer by the etching gas.

Description

Technical Field The present invention relates to a method for manufacturing a substrate graphene and a method for manufacturing the same,

The present invention relates to a method of manufacturing a substrate growth graphene, a substrate growth graphene, and an electronic component including the same.

The present invention also relates to an apparatus for producing a substrate growth graphene.

Graphene is a hexagonal material consisting of a single layer of carbon atoms, which transports electrons 100 times faster than silicon.

In addition, a method of growing graphene is mainly performed by introducing a gaseous carbon source to form activated carbon, and then growing graphene on the catalyst layer due to the activated carbon.

Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.

Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.

In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.

Therefore, there is a need for a technique for manufacturing graphene that directly contacts the surface of a substrate without leaving a catalyst metal on the substrate.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a method for manufacturing a substrate growth graphene, a substrate growth graphene and an electronic component including the same.

It is another object of the present invention to provide a substrate growing graphene manufacturing apparatus which solves the above problems.

Therefore, in order to solve the above-described problem, the present invention requires a technique for manufacturing graphene that directly contacts the surface of a substrate without leaving a catalyst metal on the substrate. Further, a technique for manufacturing a graphene of a single crystal as large as possible was required. For that reason,

a. Providing a metal layer on the substrate Thereafter,

b. A carbon-containing gas and an etching gas, and performing an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD)

c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,

d. In the step c, a continuous electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) is performed, and the metal of the metal layer is continuously removed by the etching gas, Growing the graphene on the substrate without including the graphene; And a method for manufacturing a substrate growth graphene.

The present invention also provides a method for producing a substrate growth graphene.

In addition,

With substrate growth graphene,

Wherein the substrate growth graphene directly contacts the surface of the substrate,

The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,

The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; Lt; RTI ID = 0.0 > graphenes < / RTI >

In addition,

With substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,

Wherein the substrate growth graphene has a grain boundary along a second direction parallel to the surface,

The substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; Lt; RTI ID = 0.0 > graphenes < / RTI >

In addition,

With substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,

Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a second direction parallel to the surface,

The substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; Lt; RTI ID = 0.0 > graphenes < / RTI >

In addition,

A gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to heat a region of a substrate having a metal layer; And

An electron cyclotron resonance forming apparatus for forming an electron cyclotron resonance by applying a microwave power; To

The present invention also provides a substrate growing graphene manufacturing apparatus,

The present invention provides a method for producing a substrate growth graphene in which graphenes are grown on a substrate.

The present invention also provides substrate growth graphenes.

The present invention also provides a method for manufacturing a substrate growth graphene, a substrate growth graphene, and an electronic part including the same.

The present invention also provides an apparatus for producing a substrate growth graphene.

1
1,
(One). Substrate,
(2). Providing a metal layer on the substrate Thereafter,
(3). A carbon-containing gas and an etching gas, and performing an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD)
(4). Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,
(5). In the process of (4), a continuous electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) is performed, and the metal of the metal layer is continuously removed by the etching gas Growing graphene on the substrate without a metal layer,
(1) to (5), wherein the method for producing the substrate grafting grains is carried out in the following manner.
2
Sectional view showing a first example of the substrate growth graphene provided in the method of manufacturing the substrate growth graphene shown in one embodiment of the present invention.
3
The description of FIG. 3 is explained with (1) or (2) described below.
(One). If the concentration distribution of the carbon-containing gas in the metal layer is nonuniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, the position where the crystal of graphene starts to grow and the direction of growth can be controlled.
In one embodiment of the present invention, the carbon-containing gas may only be selected from a compound containing carbon or a gas capable of forming activated carbon, with the concentration distribution of the hydrogen gas being kept constant. have.
(2). The carbon-containing gas supply may include growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer is uneven; A method for producing a substrate growth graphene
4
The description of FIG. 4 is explained by (1) or (2) described below.
(One). With a rapid removal of the metal, the carbon that can not grow on the rapidly removed metal can grow into graphene on the metal layer where the concentration of the etching gas is low, while maintaining high mobility. In one embodiment of the present invention, nucleation of a new graphene can be inhibited, since carbon with high mobility is transferred to graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.
Therefore, even when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the growth of the graphen starts from a place where the concentration of the etching gas is low, and grows toward the place where the concentration of the etching gas is high.
(2). Supplying the etching gas includes growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer becomes uneven; A method for producing a substrate growth graphene
5
The description of FIG. 5 is explained by (1) or (2) described below.
(One). The method of manufacturing the substrate growth graphenes to be described in this figure can be described as follows.
a. The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.
b. In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.
c. The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.
d. ECR-CVD is performed.
e. Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.
f. If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.
g. Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. In this case, graphenes directly contacting the surface of the substrate can realize a large crystal.
(2). The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the carbon-containing gas in the metal layer,
The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the etching gas in the metal layer,
Growing graphene in a direction parallel to the surface of the substrate; A method for producing a substrate growth graphene
6
The description of FIG. 6 is as follows.
(One). A substrate is prepared. Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.
(2). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is supplied from the top to the bottom, the shape of the metal layer is symmetrical
7
The description of FIG. 7 is as follows.
The metal layer 200 is provided on the substrate provided with the bend. The metal layer 200 may be formed into two small and large rectangular patterns. The two large and small square patterns can have a shape in which a first area made up of a very small square is connected to a vertex at the lower left of a second area made up of a large square (for example, a first area made up of a very small square May refer to a shape in which the center point of the second square is connected to the lower left vertex of the second square area. The thickness of the metal layer 200 is inclined such that the first region is thinner than the second region and thicker from the lower left vertex to the other three vertices in the second region.
In the figure, the metal layer 200 is shown by a shade, and the metal layer 200 is thicker as the shade is thicker as the metal layer 200 is thin and the shade is faint.
8
Fig. 8 is a perspective view showing a first example of a substrate growth graphene production apparatus according to an embodiment of the present invention.
9A
FIG. 9A is a first perspective view showing a second example of the substrate growth graphene production apparatus shown in schematic form in an embodiment of the present invention. FIG.
9B
FIG. 9B is a second perspective view showing a second example schematically showing a substrate growth graphene producing apparatus to be proposed in one embodiment of the present invention. FIG.
9C
Fig. 9C is a detailed view of a second perspective view showing a second example of a substrate growth graphene production apparatus proposed in one embodiment of the present invention.
9D
FIG. 9D is a first perspective view showing a third example of the substrate growth graphene production apparatus shown in schematic form in an embodiment of the present invention. FIG.
9E
FIG. 9E is a first perspective view showing a fourth example of the substrate growth graphene production apparatus shown in schematic form in an embodiment of the present invention. FIG.
10A
10A is a cross-sectional view showing a first example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
10B
10B is a cross-sectional view showing a second example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
11A
11A is a cross-sectional view showing a third example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
11B
11B is a cross-sectional view showing a fourth example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
12A
12A is a cross-sectional view showing a first example of a schematic representation of a proposed solenoid injection system in one embodiment of the present invention.
12B
12B is a cross-sectional view illustrating a second example of a schematic representation of a proposed solenoid injection system in one embodiment of the present invention.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to be exemplary only, and are not intended to limit the scope of the invention.

Substrate growth method of graphene and substrate growth graphene

Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.

Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.

In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.

Therefore, there is a need for a technique for manufacturing graphene that directly contacts the surface of a substrate without leaving a catalyst metal on the substrate.

Thus, in one embodiment of the present invention, a method of manufacturing a substrate growth graphene,

(One). (Or deposition) of a metal layer on a substrate,

(2). A carbon-containing gas and an etching gas, and performing an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD)

(3). Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,

(4). In the step (3), a continuous electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) is performed, and the etching gas is supplied (or the etching gas is continuously supplied) And a method for producing a substrate growth graphene in which the metal of the metal layer is entirely and continuously removed and graphene is in direct contact with the substrate.

To be more specific, the method includes a removing step of removing the metal layer with an etching gas while supplying a carbon-containing gas and an etching gas and maintaining an electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) Growing graphene on the substrate; The method comprising the steps of:

"ECR-CVD" can be represented by " Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-CVD) " The ECR-CVD process proposed in the present invention is an ECR-CVD process as a method for producing substrate growth grains, which is referred to as a new technique in the present invention, in which an etching process of a metal layer is included in an ECR-CVD process to directly grow graphene on a substrate. CVD process.

The "carbon-containing gas" proposed in the present invention forms a compound containing carbon or activated carbon which is provided in a state where the concentration distribution of the hydrogen gas is kept constant, that is, And the gas that can be supplied. Incidentally, the term "carbon-containing gas" may mean only those selected from a compound containing carbon or a gas capable of forming activated carbon.

In one embodiment of the present invention, the "carbon-containing gas" as presented in the present invention may mean that it is described as an integral gas that also includes a compound containing carbon and hydrogen gas.

In one embodiment of the present invention, the "carbon-containing gas" as presented in the present invention may mean that it is described as an integrated gas that includes both a gas capable of forming activated carbon and a hydrogen gas.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene comprises the steps of removing the metal layer while maintaining the ECR-CVD, so that the carbon that can not grow on the removed metal remains on the metal layer It can grow to a pin. In one embodiment of the present invention, nucleation of a new graphene can be inhibited, since carbon with high mobility is transferred to graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.

In one embodiment of the present invention, in the metal layer removing process in the method of manufacturing the substrate growth graphene, an etching gas is supplied to remove the metal layer. When the substrate is etched for a sufficient time until all of the metal layer is removed according to the method of manufacturing the substrate grown graphene, the graphene is brought into contact with the substrate without interposing a metal layer therebetween.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene is also described below. While maintaining the ECR-CVD, the metal layer is removed by an etching gas such as chlorine. Then, on the surface of the metal layer, carbon grows as graphene. If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate.

Therefore, unlike the conventional method using a metal catalyst, graphene can be directly grown on a substrate without containing a metal. In addition, in the conventional method of transferring a pattern of a graphene in advance, even if a small pattern of micrometer scale is tried to be made, damage is caused at the time of transferring. However, in the manufacturing method of the substrate growth graphene proposed in the present invention, the shape of the metal layer can be freely adjusted by performing selective etching to form a graphene pattern having a fine line width on the substrate. In addition, in the conventional method of transferring graphene to a large area of the substrate and then performing patterning by etching, there arises a problem that graphene is not accurately provided when the graphene is applied to a substrate having a structure already formed. However, in the manufacturing method of the substrate growth graphene proposed in the present invention, such a problem does not occur by freely adjusting the shape of the metal layer by performing selective etching. Here, the selective etching means performing the etching process to leave only a desired portion.

In one embodiment of the present invention, in addition to the method of performing the selective etching, the method of forming the metal layer may further include a step of forming a resist mask by dissolving the resist mask after deposition of the metal layer, And removing the metal layer formed on the surface of the metal layer and providing a metal layer having a desired pattern and shape.

In one embodiment of the present invention, the method for manufacturing the substrate growth graphene may be such that, when the supply environment of the carbon-containing gas and the etching gas is appropriately set and the growth of the graphene is performed, have.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene is such that, when the supply environment of the carbon-containing gas and the etching gas and the growth environment of the graphene are set appropriately and the growth of the graphene is performed, Graphene may be provided.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene is performed by appropriately setting the supply environment of the carbon-containing gas and the etching gas, and performing graphene growth, a small number of single crystal graphenes . Of course, in one embodiment of the present invention, a small amount of polycrystal may remain with the single crystal.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene is carried out by appropriately setting the supply environment of the carbon-containing gas and the etching gas and the growth environment of the graphene, Of single crystal graphene. Of course, in one embodiment of the present invention, a small amount of polycrystal may remain with the single crystal.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal of the metal layer is nickel and chlorine can be used as the etching gas. However, in one embodiment of the present invention, the method of manufacturing the substrate growth graphene may use any metal capable of growing carbon into graphene, and an etching gas for the metal. In one embodiment of the present invention, the arbitrary metal may mean a metal selected from a single crystal metal, a polycrystalline metal, and the like. In one embodiment of the present invention, the optional metal may refer to a metal in which the atoms are aligned.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may refer to a metal layer in which the atoms are aligned.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal of the metal layer is made of a pure metal consisting of one metal element capable of being grown as graphene by carbon and being removable by an etching gas, May be used.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the method of manufacturing the substrate growth graphene is performed before (1). Heating the copper layer (metal layer) at about 700 to 800 degrees Celsius; A process for removing oxides on the surface of the copper layer (metal layer) by supplying hydrogen of several tens sccm and applying hydrogen plasma prior to graphene growth can be additionally performed.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer can be subjected to chemical mechanical polishing (CMP) as an additional option to adjust the thickness and flatness of the metal layer to a desirable level .

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may mean a metal layer on which the metal layer is deposited and selectively etched.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may refer to a metal layer that has undergone the deposition of a metal layer and CMP, followed by selective etching.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may refer to a metal layer selected from one or more of a selectively etched metal layer, a metal layer subjected to a CMP process.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the substrate may be placed in an ECR-CVD chamber with a metal layer provided to perform the method of manufacturing the substrate growth graphene.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the step of positioning the substrate includes a load-locked chamber positioning process, a roll-to-roll positioning process, .

In an embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the step of positioning the substrate may comprise a positioning process selected from among an atmospheric pressure wafer transfer system, a vacuum wafer transfer system, and the like.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can appropriately adjust the environment of the substrate in the process before and after the formation of the graphene by using the load-lock chamber.

In one embodiment of the invention, the method of manufacturing the substrate growth graphene can suitably control the graphene forming environment by using a load-lock chamber.

In one embodiment of the present invention, the method of making the substrate growth graphene can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, the pressure, microwave power, ECR-CVD, and the like, as well as the kind of the carbon-containing gas and the etching gas, the supply pressure, the supply range, The temperature and the holding time of the CVD process can act as an important factor.

In one embodiment of the present invention, the method of making the substrate growth graphene can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, in addition to the kind of the carbon-containing gas and the etching gas and the supply pressure, the supply pressure of the hydrogen and inert gas, the supply range, the supply amount, Microwave power, the temperature and the retention time of the ECR-CVD process can serve as important factors.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can operate at a selected temperature of 750 [deg.] C to 800 [deg.] C and a pressure of about 1x10 < ^-3 > mbar as an element of the graphene growth environment.

In an embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the step of providing the metal layer provided on the substrate includes at least one of deposition, electron beam deposition, sputtering, atomic layer deposition (ALD) , Physical vapor deposition (PVD), and chemical vapor deposition (CVD).

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene may include a manufacturing process as described below. In forming graphene by ECR-CVD, instead of a clear flow of hydrogen, methane can be used to generate hydrogen species in the methane cracking process. At this time, the hydrogen partial pressure can be controlled by controlling the effective microwave power.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphenes plays an important role of hydrogen, which can affect the size and nucleation density of graphene crystals.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, hydrogen may be supplied in a state in which the flow of hydrogen is kept constant (for example, (Several sccm) may be included in the manufacturing process of the substrate growth graphene.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene strongly depends on the microwave power in the initial stage of growth.

In one embodiment of the present invention, the method of producing substrate growth graphene utilizes carbon and hydrogen as a source.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can further perform a preheating process for preheating the substrate prior to performing ECR-CVD.

In one embodiment of the present invention, in the method of producing substrate growth graphene, the formation of graphene by ECR-CVD is performed at a low pressure, for example, at a pressure of about 1 x 10 < ^-3 & (Or supplying) an etching gas, and applying a microwave power of several tens W to several hundreds of W to form a plasma in the chamber, thereby forming a carbon-containing gas on the metal layer formed on the substrate in the chamber Graphene is formed by the reaction. Therefore, the method of manufacturing the substrate growth graphene is continuously performed by the above-mentioned electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD), and the etchant gas And the metal layer is completely removed and graphene is directly in contact with the substrate. In the ECR-CVD process, it is important that the carbon-containing gas is uniformly injected in the entire metal layer region to form a uniform plasma. In addition, it is important to uniformly spray the etching gas to uniformly remove the metal layer Do. When the above process is performed, a substrate growth graphene directly contacting graphene on the substrate can be formed.

It is assumed that a certain concentration of etching gas contacts the surface of the metal layer and the metal is etched in the same manner.

In this case, when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the starting point of graphene growth becomes random.

On the other hand, if the concentration distribution of the carbon-containing gas is uneven in the metal layer, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.

Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, the position where the crystal of graphene starts to grow and the direction of growth can be controlled.

In one embodiment of the present invention, the carbon-containing gas may only be selected from a compound containing carbon or a gas capable of forming activated carbon, with the concentration distribution of the hydrogen gas being kept constant. have.

In addition, if the concentration distribution of the etching gas can be set non-uniformly, the removal of the metal becomes faster where the concentration of the etching gas is high.

Thus, with a rapid removal of the metal, the carbon that can not grow on the rapidly removed metal can grow into graphene on a metal layer at a low concentration of the etching gas, while maintaining high mobility. In one embodiment of the present invention, nucleation of a new graphene can be inhibited, since carbon with high mobility is transferred to graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.

Therefore, even when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the growth of the graphen starts from a place where the concentration of the etching gas is low, and grows toward the place where the concentration of the etching gas is high.

Thus, by appropriately setting the concentration distribution of the etching gas, it is possible to control the position where the graphene crystals start to grow and the direction in which the graphene grows.

By controlling the starting point and direction of graphene growth in this manner, the grain boundaries can be controlled to a predetermined position because grain boundaries of graphene are formed only at the growth start point and at the growth end point connected to the graphenes, By reducing the growth starting point of graphene, a large grain size can be realized.

Therefore, in an embodiment of the present invention, if the shape of the metal layer is formed so as to have a three-dimensional height, and the concentration of the etching gas at the high portion of the metal layer is increased to quickly remove the metal, Can realize a large crystal grain size.

It is also possible to appropriately combine the setting of the concentration distribution of the carbon-containing gas and the setting of the concentration distribution of the etching gas in the metal layer as described above to control the position where the growth of graphene crystals starts and the growth direction.

 In one embodiment of the present invention, a method of manufacturing a substrate growth graphene can be described as follows.

(One). The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.

(3). The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.

(4). ECR-CVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. (1) to (7), wherein the graphene directly contacting the surface of the substrate can realize a large grain diameter.

In one embodiment of the present invention, in order to prevent a metal layer from being formed on a portion other than the necessary portion, removal using a resist mask or the like can be carried out as described below. (One). Thereby forming a resist mask. Techniques for forming a resist mask are known to those skilled in the art and are therefore not described further herein, (2). A deposition process is performed to form a metal layer, (3). Next, the resist mask and the metal layer formed on the surface of the resist mask are removed by dissolving the resist mask, and a metal layer having a desired pattern and shape is provided. The steps following the steps (1) to (3) are performed .

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). The concentration of the carbon-containing gas is raised at a low point (point A) on one side of the metal layer in the metal layer.

(5). The concentration of the etching gas is raised so that the metal is quickly removed, and the concentration of the etching gas is low in the lower portion (A point) on one side of the metal layer.

(6). ECR-CVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low point (point A) on one side of the metal layer becomes the start point of the growth of graphene.

(8). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the direction of growth of the graphene grows graphene from low to high in the metal layer (that is, it grows from left to right or from right to left in this embodiment)

(9). (1) to (9), wherein the metal layer is finally removed, and the graphene is brought into direct contact with the surface of the substrate.

<B>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). In the metal layer, the concentration of the carbon-containing gas is raised at the low points (points A and B) of the metal layer.

(5). The concentration of the etching gas is set at a high level on the metal layer so that the metal is quickly removed, and the concentration of the etching gas is set low in the metal layer (points A and B).

(6). ECR-CVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low points (points A and B) of the metal layer are the starting positions for the growth of graphene.

(8). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the direction of growth of the graphene grows graphene from the low to the high position of the metal layer (that is, it grows laterally in this embodiment)

(9). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. In one embodiment of the present invention, the grain boundaries of graphene occur in the central portion where the growth direction collides. In addition, the step (1) to (9), in which the grains of graphene can occur at the beginning of growth, may be provided.

<C>

This embodiment is characterized in that, when the above embodiment B is repeated twice, the direction of the slit mask is rotated by 90 degrees so that the substrate growth graphene having the crystal grain boundaries of the square pattern (or checker pattern) Lt; / RTI &gt;

(One). On the basis of the description of the embodiment B , a slit mask is provided so that the slit is located in the left-right direction. Incidentally, in one embodiment of the present invention, the slits are repeatedly arranged regularly (the width of the slit is narrower than the slit described below).

(2). Then, metal is supplied to form a metal layer in a line. Then, the height of the metal layer changes along the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Based on the description of the above embodiment B , a method of manufacturing a substrate growth graphene is carried out. Then graphene grows up and down.

(4). When all of the metal is removed, the line graphene (s) are formed.

(5). Thereafter, the line of the substrate yes to the upper pin (s) based on the technique described in Example <B>, the slit is linearly arranged yes and parallel to the longitudinal direction of the pin (s), exactly linear graphene (or linearly arranged A slit mask is provided so that the slit is disposed in the middle of the graphenes. Incidentally, the slits are repeatedly arranged regularly.

(6). Then, metal is supplied to form a metal layer. Then, the height of the metal layer changes along the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene (s). Further, a part of the line-shaped graphene (s) may remain in the metal layer by adjusting the amount of the supplied metal, the size of the slit of the slit mask, and the distance from the substrate.

(7). Thereafter, a method for manufacturing a substrate growth graphene is carried out based on the description of the above embodiment <B> . Then, the remaining linear line graphene (s) is set as the starting position, and the plane graphene is moved in the direction orthogonal to the long direction of the slit of the slit mask, that is, perpendicular to the long direction of the linear graphene , And grow in the lateral direction.

(8). (1) to (8), in which a square pattern (or checkered pattern) of plane graphene is formed when all the metal is removed.

Accordingly, in one embodiment of the present invention, the method of manufacturing the substrate growth graphene is such that the graphene is formed by regularly spacing a regular checkered pattern (first direction) As shown in FIG.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene can control the start point and direction of growth of graphene on the substrate. Furthermore, the area of the graphene of the single crystal can be significantly increased as compared with the conventional one. Of course, in one embodiment of the present invention, a small amount of polycrystal may remain with the single crystal.

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). The shape of the metal layer is formed so as to have a three-dimensional height in the vertical direction in a line. For example, the thickness of the metal layer is set from bottom to top, and the thickness gradually increases and rapidly returns to its original shape. That is, the metal layer is formed so as to have three-dimensional height in the vertical direction in a line. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.

(3). The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.

(4). ECR-CVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). (1) to (7), wherein the metal layer is finally removed, and the line-like graphene is brought into direct contact with the surface of the substrate.

<B>

(One). After the description of the embodiment A , the shape of the metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the metal layer is formed so as to have a three-dimensional height in the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, on the basis of the technique described in Example <A>, growth substrate Yes performs the manufacturing method of the pin. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). (1) to (3) in which the metal layer is finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate.

<C>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed into two square patterns of small and large size. The two large and small square patterns can have a shape in which a first area made up of a very small square is connected to a vertex at the lower left of a second area made up of a large square (for example, a first area made up of a very small square May refer to a shape in which the center point of the second square is connected to the lower left vertex of the second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the description of the embodiment < RTI ID = 0.0 > A &lt; / RTI &gt; Then, graphene grows for the first time near the vertices of the first region, that is, the lower left corner of the two small rectangular patterns. The graphenes growing here can generally be polycrystalline.

(3). As a result of continuing the method of manufacturing the substrate growth graphene on the basis of the description of the embodiment A as described above, at least one of the polycrystals becomes a crystal nucleus due to bending near the lower left corner of two large and large square patterns . Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphene is grown such that the single crystal is oriented to the other three vertices in the second region, that is, to the right upper side.

(5). (1) to (5) consisting of two small, large, and square-grained surface grapins.

<D>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed in a checkerboard pattern. The checkerboard pattern may have a first region of a very small square connected to a lower left vertex of a second square region (e.g., a center point of a first region of a very small square center point) may refer to a shape connected to the lower left vertex of a second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the description of the embodiment < RTI ID = 0.0 > A &lt; / RTI &gt; Then, graphene grows for the first time near the apex of the first region, that is, the lower left corner of the checkered pattern. The graphenes growing here can generally be polycrystalline.

(3). Based on the description of the embodiment A , if the method of manufacturing the substrate growth graphene is continued, at least one of the polycrystals is put into the crystal nucleus due to bending near the lower left corner of the checkered pattern. Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphene is grown such that the single crystal is oriented to the other three vertices in the second region, that is, to the right upper side.

(5). (1) to (5), wherein the step (b) comprises the step (b) and the step (c) comprises the step (c).

In one embodiment of the present invention, the shapes of the first region and the second region are not limited to a square, and may be any shape. For example, if the second region has a plane such as a rectangular shape and is inclined so as to become thicker toward the other three apexes from the lower left vertex, which is the first region, a large area graphene can be formed have. On the other hand, the first region may be any arbitrary shape capable of forming a bend, and may have a shape other than a square, such as a circular shape. In one embodiment of the present invention, the metal layer has a shape in which a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate are in contact with the curvature, The thickness of the metal layer may be thinner than the thickness of the second region and the second region may be inclined to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend. (For example, (1) a first region consisting of a very small square extending in parallel to the surface of the substrate and a vertex below the left side of the second region (the apex portion widening parallel to the surface of the substrate) (2) The center point of the first region made up of a very small square is a vertex located at the lower left of the second region made of a large square having a tilt (the apex portion is parallel to the surface of the substrate Widened).

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). The metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. For example, the thickness of the metal layer is set so that the thickness gradually increases from the bottom to the top, and repeats a sudden return to the original state. That is, the metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). In one or more metal layers, the concentration of the carbon-containing gas is increased at the bottom of the at least one metal layer.

(3). The height of the at least one metal layer is set so as to raise the concentration of the etching gas so that the metal is quickly removed and the concentration of the etching gas at the lower portion of the at least one metal layer is low.

(4). ECR-CVD is performed.

(5). Then, with rapid removal of the metal, the carbon that can not grow on the rapidly removed metal grows into graphene at a low concentration of at least one etching gas while maintaining high mobility. That is, the lower part of the at least one metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the line-like graphene comes into direct contact with the surface of the substrate. Therefore, the above-described linear graphene can be provided with the steps (1) to (7) consisting of the grain boundary being formed in the middle.

<B>

(One). After the description of the embodiment A , the shape of the at least one metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the at least one metal layer is formed so as to have a three-dimensional height in the left-right direction in accordance with the grain boundary formed in the middle. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, on the basis of the technique described in Example <A>, growth substrate Yes performs the manufacturing method of the pin. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). (1) to (3) in which the metal layer is finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate.

<C>

(One). The embodiments based on the techniques described in <A>, and one or more linearly arranged yes form the pin, and on the basis of the technique described in Example <B>, may be one or more surfaces Yes form a pin.

(2). Thus, the grain boundaries of the grown portion of the plane graphen grow until it reaches the side plane graphene (the portion where another linear graphene was disposed).

(3). (1) to (3), wherein the graphene is formed in such a manner that the line segments connecting the lattice points close to each other become a grain boundary and are arranged in a lattice pattern.

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). The metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. For example, the thickness of the metal layer is set so that the thickness gradually increases from the bottom to the top, and repeats a sudden return to the original state. That is, the metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). The concentration distribution of the carbon-containing gas in one or more metal layers is uniformly configured.

(3). The height of the at least one metal layer is set so as to raise the concentration of the etching gas so that the metal is quickly removed and the concentration of the etching gas at the lower portion of the at least one metal layer is low.

(4). ECR-CVD is performed.

(5). Then, with rapid removal of the metal, the carbon that can not grow on the rapidly removed metal grows into graphene at a low concentration of at least one etching gas while maintaining high mobility. That is, the lower part of the at least one metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the line-like graphene comes into direct contact with the surface of the substrate. Therefore, the above-described linear graphene can be provided with the steps (1) to (7) consisting of the grain boundary being formed in the middle.

<B>

(One). After the description of the embodiment A , the shape of the at least one metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the at least one metal layer is formed so as to have a three-dimensional height in the left-right direction in accordance with the grain boundary formed in the middle. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, on the basis of the technique described in Example <A>, growth substrate Yes performs the manufacturing method of the pin. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). (1) to (3) in which the metal layer is finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate.

<C>

(One). The embodiments based on the techniques described in <A>, and one or more linearly arranged yes form the pin, and on the basis of the technique described in Example <B>, may be one or more surfaces Yes form a pin.

(2). Thus, the grain boundaries of the grown portion of the plane graphen grow until it reaches the side plane graphene (the portion where another linear graphene was disposed).

(3). (1) to (3), wherein the graphene is formed in such a manner that the line segments connecting the lattice points close to each other become a grain boundary and are arranged in a lattice pattern.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene can be described as follows.

(One). The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(3). The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.

(4). ECR-CVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. (1) to (7), wherein the graphene directly contacting the surface of the substrate can realize a large grain diameter.

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(5). The concentration of the etching gas is raised so that the metal is quickly removed, and the concentration of the etching gas is low in the lower portion (A point) on one side of the metal layer.

(6). ECR-CVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low point (point A) on one side of the metal layer becomes the start point of the growth of graphene.

(8). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the direction of growth of the graphene grows graphene from low to high in the metal layer (that is, it grows from left to right or from right to left in this embodiment)

(9). (1) to (9), wherein the metal layer is finally removed, and the graphene is brought into direct contact with the surface of the substrate.

<B>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(5). The concentration of the etching gas is set at a high level on the metal layer so that the metal is quickly removed, and the concentration of the etching gas is set low in the metal layer (points A and B).

(6). ECR-CVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low points (points A and B) of the metal layer are the starting positions for the growth of graphene.

(8). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the direction of growth of the graphene grows graphene from the low to the high position of the metal layer (that is, it grows laterally in this embodiment)

(9). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. In one embodiment of the present invention, the grain boundaries of graphene occur in the central portion where the growth direction collides. In addition, the step (1) to (9), in which the grains of graphene can occur at the beginning of growth, may be provided.

<C>

This embodiment is characterized in that, when the above embodiment B is repeated twice, the direction of the slit mask is rotated by 90 degrees so that the substrate growth graphene having the crystal grain boundaries of the square pattern (or checker pattern) Lt; / RTI &gt;

(One). On the basis of the description of the embodiment B , a slit mask is provided so that the slit is located in the left-right direction. Incidentally, in one embodiment of the present invention, the slits are repeatedly arranged regularly (the width of the slit is narrower than the slit described below).

(2). Then, metal is supplied to form a metal layer in a line. Then, the height of the metal layer changes along the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Based on the description of the above embodiment B , a method of manufacturing a substrate growth graphene is carried out. Then graphene grows up and down.

(4). When all of the metal is removed, the line graphene (s) are formed.

(5). Thereafter, the line of the substrate yes to the upper pin (s) based on the technique described in Example <B>, the slit is linearly arranged yes and parallel to the longitudinal direction of the pin (s), exactly linear graphene (or linearly arranged A slit mask is provided so that the slit is disposed in the middle of the graphenes. Incidentally, the slits are repeatedly arranged regularly.

(6). Then, metal is supplied to form a metal layer. Then, the height of the metal layer changes along the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene (s). Further, a part of the line-shaped graphene (s) may remain in the metal layer by adjusting the amount of the supplied metal, the size of the slit of the slit mask, and the distance from the substrate.

(7). Thereafter, a method for manufacturing a substrate growth graphene is carried out based on the description of the above embodiment <B> . Then, the remaining linear line graphene (s) is set as the starting position, and the plane graphene is moved in the direction orthogonal to the long direction of the slit of the slit mask, that is, perpendicular to the long direction of the linear graphene , And grow in the lateral direction.

(8). (1) to (8), in which a square pattern (or checkered pattern) of plane graphene is formed when all the metal is removed.

Accordingly, in one embodiment of the present invention, the method of manufacturing the substrate growth graphene is such that the graphene is formed by regularly spacing a regular checkered pattern (first direction) As shown in FIG.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene can control the start point and direction of growth of graphene on the substrate. Furthermore, the area of the graphene of the single crystal can be significantly increased as compared with the conventional one. Of course, in one embodiment of the present invention, a small amount of polycrystal may remain with the single crystal.

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). The shape of the metal layer is formed so as to have a three-dimensional height in the vertical direction in a line. For example, the thickness of the metal layer is set from bottom to top, and the thickness gradually increases and rapidly returns to its original shape. That is, the metal layer is formed so as to have three-dimensional height in the vertical direction in a line. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(3). The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.

(4). ECR-CVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the ECR-CVD, the grown graphene grows further. Since the etching is performed while maintaining the ECR-CVD, the carbon grows to have a crystal structure with the already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). (1) to (7), wherein the metal layer is finally removed, and the line-like graphene is brought into direct contact with the surface of the substrate.

<B>

(One). After the description of the embodiment A , the shape of the metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the metal layer is formed so as to have a three-dimensional height in the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, on the basis of the technique described in Example <A>, growth substrate Yes performs the manufacturing method of the pin. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). (1) to (3) in which the metal layer is finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate.

<C>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed into two square patterns of small and large size. The two large and small square patterns can have a shape in which a first area made up of a very small square is connected to a vertex at the lower left of a second area made up of a large square (for example, a first area made up of a very small square May refer to a shape in which the center point of the second square is connected to the lower left vertex of the second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the description of the embodiment < RTI ID = 0.0 > A &lt; / RTI &gt; Then, graphene grows for the first time near the vertices of the first region, that is, the lower left corner of the two small rectangular patterns. The graphenes growing here can generally be polycrystalline.

(3). As a result of continuing the method of manufacturing the substrate growth graphene on the basis of the description of the embodiment A as described above, at least one of the polycrystals becomes a crystal nucleus due to bending near the lower left corner of two large and large square patterns . Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphene is grown such that the single crystal is oriented to the other three vertices in the second region, that is, to the right upper side.

(5). (1) to (5) consisting of two small, large, and square-grained surface grapins.

<D>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed in a checkerboard pattern. The checkerboard pattern may have a first region of a very small square connected to a lower left vertex of a second square region (e.g., a center point of a first region of a very small square center point) may refer to a shape connected to the lower left vertex of a second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the description of the embodiment < RTI ID = 0.0 > A &lt; / RTI &gt; Then, graphene grows for the first time near the apex of the first region, that is, the lower left corner of the checkered pattern. The graphenes growing here can generally be polycrystalline.

(3). Based on the description of the embodiment A , if the method of manufacturing the substrate growth graphene is continued, at least one of the polycrystals is put into the crystal nucleus due to bending near the lower left corner of the checkered pattern. Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphene is grown such that the single crystal is oriented to the other three vertices in the second region, that is, to the right upper side.

(5). (1) to (5), wherein the step (b) comprises the step (b) and the step (c) comprises the step (c).

In one embodiment of the present invention, the shapes of the first region and the second region are not limited to a square, and may be any shape. For example, if the second region has a plane such as a rectangular shape and is inclined so as to become thicker toward the other three apexes from the lower left vertex, which is the first region, a large area graphene can be formed have. On the other hand, the first region may be any arbitrary shape capable of forming a bend, and may have a shape other than a square, such as a circular shape. In one embodiment of the present invention, the metal layer has a shape in which a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate are in contact with the curvature, The thickness of the metal layer may be thinner than the thickness of the second region and the second region may be inclined to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend. (For example, (1) a first region consisting of a very small square extending in parallel to the surface of the substrate and a vertex below the left side of the second region (the apex portion widening parallel to the surface of the substrate) (2) The center point of the first region made up of a very small square is a vertex located at the lower left of the second region made of a large square having a tilt (the apex portion is parallel to the surface of the substrate Widened).

In one embodiment of the present invention, setting the concentration distribution of the carbon-containing gas can be set to adjust the injection position of the carbon-containing gas.

In one embodiment of the present invention, setting the concentration distribution of the carbon-containing gas can be set to regulate the supply range of the carbon-containing gas.

In one embodiment of the present invention, setting the concentration distribution of the etching gas can be set by adjusting the injection position of the etching gas.

In one embodiment of the present invention, the setting of the concentration distribution of the etching gas can be set by adjusting the supply range of the etching gas.

In one embodiment of the present invention, the setting of the concentration distribution of the carbon-containing gas can be set by adjusting the partial pressure of the carbon-containing gas. In one embodiment of the invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the hydrogen gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the argon gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the inert gas.

In one embodiment of the present invention, the carbon-containing gas may be supplied as hydrogen.

In one embodiment of the present invention, the carbon-containing gas may be supplied as argon.

In one embodiment of the present invention, the carbon-containing gas may be supplied, such as hydrogen and argon.

In one embodiment of the present invention, the concentration distribution of the etching gas is set by adjusting the partial pressure of the etching gas. In one embodiment of the present invention, the partial pressure of the etching gas can be adjusted by diluting chlorine to a desired concentration.

In one embodiment of the present invention, a process of forming the shape of the metal layer to have a three-dimensional height or a process of forming the thickness of the metal layer non-uniformly can be described as follows.

(One). One or more slits are formed on a metal foil or the like, and a slit mask is formed. Then, the slit mask is arranged apart from the substrate by a predetermined distance, and the metal is supplied by sputtering to reach the substrate via the slit mask. Then, the metal layer becomes thick at a portion opposed to the slit of the slit mask, and the metal layer becomes thinner as it moves away from the slit.

(2). One or more slits are formed on a metal foil or the like, and a slit mask is formed. When the slit mask is spaced apart from the substrate by a predetermined distance and the sputtering direction is horizontal with respect to the substrate surface, the metal layer is formed thick in the vicinity of the slit and the thickness of the metal layer Lt; / RTI &gt;

(3). When the slit mask is spaced apart from the substrate by a predetermined distance and the sputtering direction is perpendicular to the surface of the substrate, the metal layer is formed thick in the vicinity of the slit and the thickness of the metal layer is thin Jima,

(4). It is also possible to use a plurality of obstacles in contact with the substrate surface instead of the slit mask. In this case, since the obstacle becomes an obstacle to sputtering, the metal layer becomes thinner in the vicinity of the obstacle, and the metal layer becomes thicker as it gets farther from the obstacle,

(5). In addition, when metal is supplied by sputtering, one or more movable shutters may be provided and the shutter may be closed gradually. (1) to (5), wherein the metal layer in the vicinity of the first closed portion of the shutter is thin and the metal layer in the vicinity of the closed portion at the end of the shutter is thickened. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

In one embodiment of the present invention, after the ECR-CVD process in the method of manufacturing the substrate growth graphene, the cooling process can be performed on the formed graphene. The cooling step is a method for uniformly growing the formed graphenes so that the graphenes can be uniformly arranged. Since rapid cooling may cause cracking of the graphene, it is preferable that the cooling step is gradually cooled at a constant speed. For example, it is possible to use a method such as natural cooling. The natural cooling is obtained by simply removing the heat source used for the heat treatment. Thus, it is possible to obtain a sufficient cooling rate even by removing the heat source.

In one embodiment of the present invention, a method of manufacturing substrate growth graphene may comprise further supplying a reducing gas with the carbon-containing gas and the etching gas. For example, the reducing gas may comprise hydrogen, helium, argon, or nitrogen.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas may refer to an etching gas containing chlorine or chlorine. In one embodiment of the present invention, the etching gas is not limited to an etching gas containing chlorine or chlorine, and can be used as long as it is an etching gas of a metal layer capable of growing graphene.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the number of graphene layers may be several to fifty, but is not limited thereto. The ECR-CVD process, the metal layer removal (etching) process, and the cooling process for providing the number of graphene layers are performed one or more times.

In one embodiment of the present invention, in the method of producing substrate growth graphene, the carbon-containing gas may include, but is not limited to, methane.

In one embodiment of the present invention, in the method of manufacturing substrate growth graphene, the carbon-containing gas is comprised of a hydrogen gas and a gas capable of forming activated carbon.

In one embodiment of the present invention, hydrogen (or hydrogen gas) plays a very important role in determining the size and domain shape of graphene crystals.

In one embodiment of the present invention, hydrogen (or hydrogen gas) plays a very important role. Together with the catalytic metal, determine the decomposition of the hydrocarbon gas and the size and domain shape of the graphene crystals.

In one embodiment of the present invention, in the method for producing substrate growth graphene, the carbon-containing gas may include, but is not limited to, a carbon-containing compound having from about 1 to about 10 carbon atoms. For example, the carbon-containing gas may be selected from cyclopentane, cyclopentadiene, hexane, hexene, cyclohexane, cyclohexadiene, benzene, toluene, carbon monoxide, carbon dioxide, methane, ethane, ethylene, ethanol, acetylene, But are not limited to, those selected from the group consisting of butane, butylene, butadiene, pentane, pentene, pentene, pentadiene, and combinations thereof.

In an embodiment of the present invention, in the method of producing substrate growth graphene, the carbon-containing gas and the etching gas in the chamber of the ECR-CVD apparatus are either only methane gas and etching gas, or inert such as argon, helium, It is also possible to exist with the gas.

In an embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the carbon-containing gas and the etching gas in the chamber of the ECR-CVD apparatus are either only the carbon-containing gas and the etching gas, or argon, helium, And the like.

In one embodiment of the present invention, the carbon-containing gas may be meant to include hydrogen in addition to the compound comprising carbon. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, the carbon-containing gas may mean containing hydrogen along with a gas capable of forming activated carbon. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the thickness of the metal layer may have a thickness selected from about 35 nm to 500 nm, but is not limited thereto.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the thickness of the metal layer may have a thickness selected from a range of from several tens nanometers to several hundreds of micrometers, but is not limited thereto.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene can be provided with a large area graphene by freely adjusting the size of the metal layer. In addition, since the carbon-containing gas and the etching gas are supplied in a gaseous state (supplied in a gaseous state) and there is no restriction on the shape of the metal layer, various types of graphenes can be provided. For example, graphene having a three-dimensional solid shape may also be provided.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can control the thickness of the graphene by controlling the ECR-CVD execution time and the etching execution time.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can control the thickness of the graphene by controlling the ECR-CVD execution time, the etching execution time, and the graphen forming environment.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises providing a metal layer on a substrate, thereafter supplying a carbon-containing gas and an etching gas and performing an electron cyclotron resonance plasma chemical vapor deposition (Microwave Electron Cyclotron Resonance Plasma And removing the metal layer with an etching gas while maintaining an Enhanced Chemical Vapor Deposition (ECR-CVD), thereby growing graphene on the substrate without a metal layer; The method comprising the steps of:

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the substrate is provided with one or more Piezo material, magnetic particles, particles having charge, can do.

In one embodiment of the invention, Piezo refers to the converse piezoelectric effect. That is, mechanical deformation occurs when an electric field is applied.

In one embodiment of the present invention, in the method for producing substrate growth graphene, the metal of the metal layer is nickel and the etching gas is chlorine; The method comprising the steps of:

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &

c. The substrate being sequentially loaded into the deposition chamber and the ECR-CVD chamber using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the invention, the step of cooling the substrate growth graphene can be further included.

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

c. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the invention, the step of cooling the substrate growth graphene can be further included.

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the invention, the step of cooling the substrate growth graphene can be further included.

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

d. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the invention, the step of cooling the substrate growth graphene can be further included.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene may additionally comprise several steps, but it is basically to provide a carbon-containing gas and etch gas with a metal layer and an electron cyclotron resonance plasma chemical vapor deposition (ECR And removing the metal layer with an etching gas while maintaining the metal layer on the substrate.

In one embodiment of the present invention, in the method of making a substrate growth graphene, performing electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) is performed at a point of time when graphene is grown, i.e., at a pressure of about 1 x 10 ^-3 mbar The time from when the etching gas and the carbon-containing gas are supplied to grow graphene is maintained at a sufficient heating temperature (for example, 750 ° C to 800 ° C) by electron cyclotron resonance plasma chemical vapor deposition (ECR- CVD) is performed.

'' -

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Providing a metal layer on the substrate Thereafter,

b. A carbon-containing gas and an etching gas, and performing an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD)

c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,

d. In the step c, a continuous electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) is performed, and the metal of the metal layer is continuously removed by the etching gas, Growing the graphene on the substrate without including the graphene; of

And a method for manufacturing a substrate growth graphene.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the carbon-containing gas supply is configured such that the concentration distribution of the carbon-containing gas in the metal layer is unevenly distributed, Thereby realizing a large crystal graphene; .

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the etching gas supply is performed such that the concentration distribution of the etching gas in the metal layer is made non-uniform and the starting point and direction of the growth of graphene are controlled, Realizing a large crystal of the pin; .

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer has a slope in the thickness of the metal layer, and the etching gas is supplied at a higher portion of the metal layer by increasing the concentration of the etching gas, And the concentration of the etching gas is low in the lower part of the metal layer so that the lower part of the metal layer becomes the starting position of the growth of graphene; .

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal layer has a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate, The thickness of the metal layer is thinner than that of the second region and the thickness of the metal layer is inclined so that the thickness of the metal layer is increased when the second region is away from the bend that; .

In one embodiment of the invention, in the method of manufacturing substrate growth graphene, the metal layer has a slope in the thickness of the metal layer, and the carbon-containing gas supply is configured such that the concentration of the carbon- And the concentration of the carbon-containing gas in the lower portion of the metal layer is higher than that of the metal layer. The etching gas is supplied at a higher portion of the metal layer by increasing the concentration of the etching gas, So that the lower part of the metal layer becomes the starting position of the growth of graphene; .

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal layer has a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate, The thickness of the metal layer is thinner than that of the second region and the thickness of the metal layer is inclined so that the thickness of the metal layer is increased when the second region is away from the bend that; .

In one embodiment of the present invention, in the method of producing substrate growth graphene, the carbon-containing gas supply causes the concentration distribution of the carbon-containing gas in the metal layer to be uneven in a direction parallel to the surface of the substrate Growing graphene in a direction parallel to the surface of the substrate; .

In an embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the etching gas supply causes a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer to be uneven, Growing graphene in a direction parallel to the surface; .

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene,

The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the carbon-containing gas in the metal layer,

The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the etching gas in the metal layer,

Growing graphene in a direction parallel to the surface of the substrate; .

In one embodiment of the present invention, a method of making a substrate growth graphene comprises the method of making a substrate growth graphene described as being selected from the following <A>, <B>, <C> :

<A>

The carbon-containing gas supply may include growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer is uneven; &Lt; / RTI &gt;

<B>

Supplying the etching gas includes growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer becomes uneven; &Lt; / RTI &gt;

<C>

The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the carbon-containing gas in the metal layer,

The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the etching gas in the metal layer,

Growing graphene in a direction parallel to the surface of the substrate; &Lt; / RTI &gt;

In an embodiment of the present invention, in the method for producing substrate growth graphene, the metal of the metal layer is iron, nickel, cobalt or an alloy containing them, and the etching gas is chlorine; .

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &

c. The substrate being sequentially loaded into the deposition chamber and the ECR-CVD chamber using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

c. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

d. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing substrate growth graphene further comprises cooling the graphene grown on the substrate; The method comprising the steps of:

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, growing graphene is performed by a roll-to-roll process; .

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas supply of the metal may be performed before ECR-CVD is performed, and therefore, And a method of manufacturing a substrate growth graphene for performing CVD.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas supply of the metal may be performed before supplying the carbon-containing gas, and thus, And a method of manufacturing a substrate growth graphene for supplying a carbon-containing gas.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;

b. Constituting a concentration distribution of the carbon-containing gas in the metal layer uniformly, and

c. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;

d. Performing ECR-CVD, and

e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And

f. Continuing the etching while maintaining the ECR-CVD, growing carbon so as to form a crystal structure with the already-grown graphene, and

g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and

h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To

The method of manufacturing a substrate growth graphene according to claim 1,

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;

b. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and

c. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;

d. Performing ECR-CVD, and

e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And

f. Continuing the etching while maintaining the ECR-CVD, growing carbon so as to form a crystal structure with the already-grown graphene, and

g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and

h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To

The method of manufacturing a substrate growth graphene according to claim 1,

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;

b. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and

c. So that the etching gas is uniformly injected to uniformly remove the metal layer, and

d. Performing ECR-CVD, and

e. With the removal of the metal, the carbon that can not grow on the metal to be removed remains in high mobility, where the concentration of the carbon-containing gas is high, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And

f. Continuing the etching while maintaining the ECR-CVD, growing carbon so as to form a crystal structure with the already-grown graphene, and

g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and

h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To

The method of manufacturing a substrate growth graphene according to claim 1,

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal layer has a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate, The thickness of the metal layer is thinner than that of the second region and the thickness of the metal layer is inclined so that the thickness of the metal layer is increased when the second region is away from the bend that; .

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene further comprises cooling the graphene directly contacting the surface of the substrate; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface are manufactured by a method for producing a substrate growth graphene,

Preparing surface graphenes growing in a second direction parallel to the surface from the linear graphenes and in direct contact with the surface by a method of manufacturing a substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene further comprises cooling the line graphene and cooling the plane graphene; The method comprising the steps of:

In one embodiment of the present invention, the present invention provides a method of fabricating a substrate having a substrate growth graphene,

Wherein the substrate growth graphene directly contacts the surface of the substrate,

The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,

The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; &Lt; / RTI &gt;

In one embodiment of the present invention, the present invention provides a method of fabricating a substrate having a substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,

Wherein the substrate growth graphene has a grain boundary along a second direction parallel to the surface,

The substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; &Lt; / RTI &gt; In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; &Lt; / RTI &gt;

In one embodiment of the present invention, the present invention provides a method of fabricating a substrate having a substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,

Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a second direction parallel to the surface,

The substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; &Lt; / RTI &gt; In one embodiment of the present invention, in the present invention, the first direction and the second direction are orthogonal, the intervals of the grain boundaries along the first direction are constant, and the grain boundaries along the second direction The spacing is constant; &Lt; / RTI &gt;

In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized by comprising a method of manufacturing a substrate growth graphene.

In one embodiment of the present invention, a method of manufacturing an electronic component may mean a method of manufacturing a transistor, but the present invention is not limited thereto.

In one embodiment of the present invention, a manufacturing method of an electronic component may mean a manufacturing method of a central processing unit (CPU).

In one embodiment of the present invention, a method of manufacturing an electronic component may refer to a method of manufacturing a memory.

In one embodiment of the present invention, the present invention provides an electronic component comprising the method of manufacturing an electronic component, comprising the method of manufacturing a substrate growth graphene.

In one embodiment of the present invention, the present invention comprises an electronic component comprising a substrate growth graphene.

In one embodiment of the present invention, the electronic component is a transistor; But is not limited thereto.

In one embodiment of the present invention, a transistor means a transistor including a graphen transistor.

In one embodiment of the present invention, the electronic component is a central processing unit (CPU); .

In one embodiment of the present invention, the electronic component is a memory; .

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Substrate growth graphene manufacturing equipment

In one embodiment of the present invention, the present invention provides a method for producing a carbon-containing gas, comprising the steps of: supplying a carbon-containing gas and an etching gas; supplying a gas- A heating device arranged to totally and / or partially heat a substrate having a metal layer arranged to be in contact with an ejected carbon-containing gas and an etching gas, and an area of a substrate having a metal layer; and a microwave power And an electron cyclotron resonance forming apparatus for forming an electron cyclotron resonance by applying the electron cyclotron resonance to the substrate.

In one embodiment of the present invention, the present invention provides a gas supply system comprising: a gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to locally heat the region of the substrate comprising the metal layer; And

An electron cyclotron resonance forming apparatus for forming an electron cyclotron resonance by applying a microwave power; And a substrate grafting step for grafting the substrate.

In one embodiment of the present invention, the present invention provides a gas supply system comprising: a gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to heat a region of a substrate having a metal layer; And

An electron cyclotron resonance forming apparatus for forming an electron cyclotron resonance by applying a microwave power; And a substrate grafting step for grafting the substrate.

In one embodiment of the present invention, the present invention provides a gas supply system comprising: a gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to heat a region of a substrate having a metal layer; And

An electron cyclotron resonance forming apparatus for forming an electron cyclotron resonance in a chamber by applying a microwave power; And a substrate grafting step for grafting the substrate.

In one embodiment of the present invention, the present invention further comprises a gas flow controller (gas supply regulator) connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas outlet, Thereby providing a manufacturing apparatus.

In one embodiment of the present invention, the carbon-containing gas and the etching gas further comprise an inert gas and hydrogen gas.

In one embodiment of the present invention, the carbon-containing gas and the etching gas further comprise an inert gas.

In one embodiment of the present invention, the gas ejection portion is characterized by having a storage portion in which the carbon-containing gas and the etching gas are accommodated, and a nozzle portion for ejecting the carbon-containing gas and the etching gas.

In one embodiment of the present invention, the gas ejection portion is characterized by comprising a reservoir in which the carbon-containing gas and the etching gas are accommodated, and a piezo injection system for ejecting the carbon-containing gas and the etching gas.

In one embodiment of the present invention, the gas ejection portion is characterized by comprising a storage portion in which the carbon-containing gas and the etching gas are accommodated, and a solenoid injection system for ejecting the carbon-containing gas and the etching gas.

In one embodiment of the invention, the gas ejector comprises a reservoir in which a carbon-containing gas and an etching gas are received, a heating portion for heating the carbon-containing gas and the etching gas to a predetermined temperature, And a piezo injecting system for injecting the fluid.

In one embodiment of the invention, the gas ejector comprises a reservoir in which a carbon-containing gas and an etching gas are received, a heating portion for heating the carbon-containing gas and the etching gas to a predetermined temperature, And a solenoid injection system for injecting the air into the combustion chamber.

In one embodiment of the present invention, the gas ejecting portion is provided in a form including a region corresponding to a region of the substrate having the metal layer.

In one embodiment of the present invention, the heating device may be arranged to heat a region of the substrate having a metal layer in contact with the jetted carbon-containing gas and the etching gas.

In one embodiment of the present invention, the heating device is provided in a form including a region corresponding to a region of the substrate having the metal layer.

In one embodiment of the present invention, the heating device is provided in the same space as the gas ejecting portion.

In one embodiment of the present invention, the heating device may be provided with a halogen lamp, but is not limited to heating to a certain temperature.

In one embodiment of the present invention, an electron cyclotron resonance forming apparatus is characterized in that it includes an electron cyclotron resonance magnet (Electron Cyclotron Resonance Magnet).

In one embodiment of the present invention, an electron cyclotron resonance forming apparatus is characterized in that it includes a plasma power source and an electron cyclotron resonance magnet (Electron Cyclotron Resonance Magnet).

In one embodiment of the present invention, an electron cyclotron resonance forming apparatus may be referred to as a plasma forming apparatus.

In one embodiment of the present invention, forming an electron cyclotron resonance in the chamber may mean that a plasma is formed.

In an embodiment of the present invention, an electron cyclotron resonance forming apparatus is provided in a space such as a gas ejecting portion.

In one embodiment of the invention, the substrate growth graphene production apparatus comprises (1). Gas spouting part, (2). A substrate comprising a metal layer, (3). Electron Cyclotron Resonance Forming Device, (4). (1) to (4), which are constituted by a heating device and a heating device.

In one embodiment of the present invention, the outer periphery of the substrate growth graphene production apparatus is provided with a pressure holding device for holding the inside of the substrate growth graphene production apparatus at a constant pressure (for example, a pressure of about 1 × 10 ^-3 mbar) .

In one embodiment of the present invention, the pressure holding device may refer to a pumping system, but is not limited in terms of a pressure holding device.

In an embodiment of the present invention, the pressure holding device is not provided as shown in the drawings but is not provided as an exhaust device, but may be separately provided in a substrate growth graphene manufacturing apparatus, (E.g., a pressure of the order of 1 × 10 ^-3 mbar).

In one embodiment of the present invention, the outer periphery of the substrate growth graphene production apparatus is characterized by comprising an exhaust device.

In one embodiment of the present invention, the exhaust device can be used to easily evacuate gas remaining inside the exterior of the substrate growth graphene production apparatus to prevent incorporation of impurity gases in the production of substrate growth graphene.

In one embodiment of the invention, the exhaust system can be used to form a flow of carbon-containing gas and etching gas in the manufacture of substrate growth graphene.

In one embodiment of the present invention, the outer periphery of the substrate growth graphene manufacturing apparatus is connected to a positioning process selected from a load-locked chamber positioning process, a roll-to-roll positioning process, do.

In one embodiment of the present invention, the outer periphery of the substrate growth graphene production apparatus is characterized by being connected to a selected localization process method, such as an atmospheric pressure wafer transfer system, a vacuum wafer transfer system.

In one embodiment of the present invention, the gas ejection portion is characterized by ejecting gas while moving.

In one embodiment of the present invention, the substrate growth graphene fabrication apparatus is characterized by being capable of imparting a change in position to a substrate having a metal layer disposed therein.

In one embodiment of the present invention, a substrate growth graphene fabrication apparatus includes adjusting the position of a substrate having a metal layer disposed therein; .

In an embodiment of the present invention, when constituting the gas ejecting part for ejecting gas while moving, it is preferable to constitute a positioning device using a servo motor.

In one embodiment of the present invention, the apparatus for manufacturing a substrate growth graphene is preferably a positioning apparatus using a servo motor in adjusting the position of a substrate having a metal layer disposed therein.

In an embodiment of the present invention, the apparatus for producing a substrate growth graphene may be provided in such a manner that a heating apparatus for heating a substrate having a metal layer located therein to a predetermined temperature is not disturbed by the production of the substrate growth graphene.

In one embodiment of the present invention,

Providing a metal layer on a substrate; And

Supplying and discharging a carbon-containing gas and an etching gas; And

Performing an electron cyclotron resonance plasma chemical enhanced vapor deposition (ECR-CVD); And

(ECR-CVD) is carried out by continuously performing an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) process. Since the metal of the metal layer is continuously removed by the etching gas, Growing graphene on a substrate; To

The method of manufacturing a substrate growth grapnn comprises the steps of:

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas and an etching gas; And

Performing an electron cyclotron resonance plasma chemical enhanced vapor deposition (ECR-CVD); And

(ECR-CVD) is carried out by continuously performing an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) process. Since the metal of the metal layer is continuously removed by the etching gas, Growing graphene on a substrate; , &Lt; / RTI &

Wherein the steps are controlled by a controller of a substrate growth graphene production apparatus.

In one embodiment of the present invention, the controller of the substrate growth graphene production apparatus may be provided in the form of a computer, but is not limited thereto.

In one embodiment of the present invention, the step of performing the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) may be performed by moving the substrate having the metal layer (catalyst layer) .

In one embodiment of the invention, the substrate growth graphene production apparatus further comprises a cooling section for cooling the area of the substrate growth graphene.

In one embodiment of the present invention, the cooling section is characterized in that it is gradually cooled at a constant speed so that the graphene can uniformly grow and be uniformly arranged.

In one embodiment of the present invention, the cooling section is characterized in that after the ECR-CVD process, the cooling process is performed on the formed graphene.

In one embodiment of the present invention, the substrate growth graphene fabrication device is characterized in that it is included in a process platform that facilitates the fabrication of functional devices that exhibit enhanced reliability with respect to semiconductor material-based devices.

In one embodiment of the present invention, the substrate growth graphene manufacturing apparatus is a process platform that facilitates the fabrication of functional devices that exhibit enhanced reliability with respect to semiconductor material based devices produced by "bottom-up & Is included.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas and an etching gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas, an etching gas and a hydrogen gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas, an etching gas and an inert gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas, an etching gas, a hydrogen gas and an inert gas.

In one embodiment of the present invention, the gas ejector may be provided with a carbon-containing gas and an etching gas, wherein the carbon-containing gas is heated to a predetermined temperature so that the activated carbon can be easily formed.

In an embodiment of the present invention, the gas ejecting portion may be characterized by heating and ejecting the carbon-containing gas and the etching gas to a predetermined temperature.

In an embodiment of the present invention, the gas ejection portion is connected to the gas supply portion by the gas connection pipe.

In one embodiment of the present invention, the gas supply regulator can easily control the amount of gas supplied from the gas supply to the gas spout.

In an embodiment of the present invention, the gas supply regulator may include a solenoid valve to easily control the amount of gas supplied to the gas ejector.

In one embodiment of the present invention, the proposed solenoid refers to an electronic solenoid.

In one embodiment of the present invention, the proposed solenoid refers to an electronically controlled solenoid.

In one embodiment of the present invention, the gas supply regulator includes a pressure control valve to easily control the amount of gas supplied to the gas ejection portion. Here, the pressure control valve means a valve that maintains a constant pressure in the gas connection pipe, controls the maximum pressure, or regulates the pressure of the gas supplied to the gas ejection portion.

In one embodiment of the present invention, the gas supply regulator includes a flow control valve to easily control the amount of gas supplied to the gas ejection portion. Here, the flow control valve means a valve for controlling the flow rate of the gas.

In one embodiment of the present invention, the gas supply regulator can regulate the degree of formation of graphene by appropriately adjusting important factors such as the supply pressure of the etching gas and the carbon-containing gas, the supply range, the supply amount, and the like.

In one embodiment of the present invention, the gas supply regulator can regulate the degree of formation of graphene by appropriately adjusting important factors such as the supply pressure of the etching gas and the carbon-containing gas, the supply range, the supply amount, the injection position,

In an embodiment of the present invention, the gas ejecting portion includes a nozzle module, and the nozzle module may be provided with a nozzle module having a solenoid.

In one embodiment of the invention, the gas ejector may comprise a solenoid ejection system. In one embodiment of the present invention, the solenoid injection system may be provided with a injection system having a solenoid. Alternatively, in an embodiment of the present invention, the solenoid injection system may be provided with a nozzle module having a solenoid.

In one embodiment of the present invention, a nozzle module with solenoids is an apparatus that instantaneously sprays gas into the substrate growth graphene fabrication device, which may comprise a very small aperture and a device for opening and closing it .

In one embodiment of the present invention, a nozzle module having a solenoid is an apparatus for instantaneously injecting gas into a substrate growth graphene production apparatus, which comprises a very small hole, a device for opening and closing it, and a needle Can be characterized.

In one embodiment of the present invention, the solenoid injection system is controlled by a controller of the substrate growth graphene production apparatus.

In one embodiment of the present invention, the arrangement of the solenoid injection system may basically adopt a grid-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the arrangement of the solenoid injection system may basically adopt a matrix-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the solenoid injection system regulates the injection amount of the carbon-containing gas.

In one embodiment of the present invention, the solenoid injection system adjusts the injection amount of the etching gas.

In one embodiment of the invention, the solenoid injection system regulates the amount of carbon-containing gas injected and the amount of etch gas injected.

In one embodiment of the present invention, the solenoid injection system has the following operation sequence. (One). Voltage application (current connection), (2). Solenoid valve module operation, (3). Piston module operation, (4). Needle opening, (5). (1) to (5), which consist of gas injection, and the like.

In one embodiment of the present invention, the solenoid injection system has the following operation sequence. (One). Voltage interruption (current interruption), (2). Solenoid valve module stop, (3). Piston module stop, (4). Needle closure, (5). (1) to (5) in which the gas injection stop is performed.

In one embodiment of the present invention, a solenoid refers to a device that includes a configuration that moves a plunger within a coil when a current is applied to the coil to provide mechanical movement.

In one embodiment of the present invention, a solenoid refers to a module that includes a configuration that moves a plunger within a coil when a current is applied to the coil and has mechanical motion.

In one embodiment of the present invention, the solenoid injection system senses a change in gas due to repetitive injection, and enables precise injection control in consideration of the difference. This precise injection control detects the change of the gas due to the repetitive injection of the solenoid injection system and makes a determination after analysis in the control apparatus of the substrate growth graphene manufacturing apparatus, It can be said to perform injection control.

In one embodiment of the present invention, detecting a change in gas may mean detecting a change in pressure of the gas ejected to the pressure measurement sensor in real time and / or intermittently.

In an embodiment of the present invention, the shape of the nozzle may include, but is not limited to, a shape selected from a circle, a rectangle, a rectangle, an elongated circle, an elongated rectangle, and an elongated rectangle.

In one embodiment of the present invention, the solenoid injection system can control the degree of graphene generation by appropriately adjusting important factors such as the etching gas and the supply range of the carbon-containing gas, the supply amount, and the like.

In one embodiment of the present invention, the solenoid injection system can control the degree of generation of graphene by appropriately adjusting important factors such as the supply range of the etching gas and the carbon-containing gas, the supply amount, the injection position,

In one embodiment of the present invention, the gas ejector has a nozzle module, and the nozzle module may be provided with a nozzle module or piezo nozzle module having a piezo actuator (for example, a piezo electric actuator).

In one embodiment of the present invention, a piezoelectric actuator (e.g., a piezoelectrical actuator) includes a piezo ceramic layer and an electrode layer, wherein the piezo ceramic layer and the electrode layer are arranged such that one layer is on top of one layer, And are arranged in such a manner as to be aligned with each other.

In one embodiment of the present invention, the piezo actuator (e.g., piezo electric actuator) may be characterized as comprising a piezo crystal material, but is not limited in that it is a piezo material.

In one embodiment of the invention, the gas ejection portion may comprise a piezo injection system. In one embodiment of the invention, the piezo injection system may comprise a injection system with a piezo actuator (e.g. piezo electric actuator). Alternatively, in one embodiment of the present invention, the piezo injection system may be provided with a nozzle module or piezo nozzle module having a piezo actuator (e.g., piezo electric actuator).

In one embodiment of the present invention, since the piezo injection system can control the operation time to be not more than 100 microseconds in injection time, the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- .

In one embodiment of the present invention, since the piezo injection system can control the operation time to be not more than 100 microseconds, the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer useful.

In one embodiment of the present invention, since the piezo injection system can control the operation time to be not more than 100 microseconds in injection time, the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- , And is useful for making the concentration distribution in the direction parallel to the surface of the substrate uneven among the concentration distribution of the etching gas in the metal layer.

In one embodiment of the invention, the piezo injection system can precisely control the injection timing by reducing the time of injection compared to the conventional nozzle system, and significantly less noise and vibration than conventional nozzle systems.

In one embodiment of the present invention, the piezo injection system senses a change in gas due to repetitive injection and enables precise injection control taking into account the difference.

In one embodiment of the invention, the piezo injection system has the following sequence of operations. (One). Electric charging (or application of voltage), (2). Piezo actuator operation, (3). Hydraulic coupler hydraulic pressure increase, (4). Pressure control valve open, (5). Needle opening, (6). (1) to (6), which consist of gas injection, and gas injection.

In one embodiment of the invention, the piezo injection system has the following sequence of operations. (One). Electric discharge (or interruption of voltage), (2). Piezo actuator stop, (3). Hydraulic coupler hydraulic pressure reduction, (4). Pressure control valve closed, (5). Needle closure, (6). (1) to (6) in which the gas injection is stopped.

In one embodiment of the present invention, the arrangement of the piezo injection system can basically adopt a grid-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the arrangement of the piezo injection system can basically adopt a matrix-like arrangement, but is not limited thereto.

In one embodiment of the invention, the piezo injection system is controlled by a controller of the substrate growth graphene production apparatus.

In one embodiment of the invention, the piezo injection system regulates the amount of carbon-containing gas injected.

In one embodiment of the present invention, the piezo injection system adjusts the injection amount of the etching gas.

In one embodiment of the invention, the piezo injection system adjusts the injection amount of the carbon-containing gas and the injection amount of the etching gas.

In an embodiment of the present invention, the shape of the nozzle may include, but is not limited to, a shape selected from a circle, a rectangle, a rectangle, an elongated circle, an elongated rectangle, and an elongated rectangle.

In one embodiment of the present invention, the piezo injection system can control the degree of formation of graphene by appropriately adjusting important components such as the etching gas and the carbon-containing gas supply range, feed rate, and the like.

In one embodiment of the present invention, the piezo injection system can control the degree of graphene formation by appropriately adjusting important elements such as the range of supply of the etching gas and the carbon-containing gas, the feed rate, the injection position,

In one embodiment of the invention, the substrate growth graphene production apparatus may further comprise various detection devices. Such an example may include an apparatus for detecting and / or discriminating the state of a substrate provided with a substrate growth graphene having a photo-detecting device.

In one embodiment of the present invention, the substrate growth graphene manufacturing apparatus may be configured to transport the wafer or substrate from the storage device, without bringing the device or apparatus for exporting the wafer or substrate from the storage device into and out of the storage device in detail And a mechanism (device) for taking out the substrate to the storage device are provided in the substrate growth graphene production apparatus are well known to those skilled in the art and therefore may not be described in detail in the present invention. Here, the storage device may refer to a storage device in which a wafer or a substrate is stored and transferred to the wafer transfer system.

In one embodiment of the present invention, the apparatus for producing a substrate growth graphene does not describe or schematize a mechanism for bringing the wafer or substrate into and out of the substrate growth graphene production apparatus It is well known to those skilled in the art that a mechanism for transferring the wafer or substrate into the substrate growing graphene manufacturing apparatus and taking it out of the substrate growing graphening apparatus is provided in the substrate growing graphening apparatus, It may not be described in detail.

In one embodiment of the present invention, an apparatus (device) for carrying a wafer or substrate from a storage device to a carry-in and storage device may mean, but is not limited to, a wafer handler (or wafer transfer robot).

In one embodiment of the present invention, an apparatus for transferring a wafer or a substrate into the substrate growth graphene production apparatus and for taking it out of the substrate growth graphene production apparatus may mean a wafer handler (or a wafer transfer robot) , But is not limited thereto.

In one embodiment of the present invention, the substrate growth graphene fabrication apparatus may additionally include a plurality of devices, but basically it supplies etch gas and carbon-containing gas and maintains electron cyclotron resonance plasma chemical vapor deposition (ECR-CVD) And a removing step of removing the metal layer with the etching gas while the metal layer is being removed, so as to perform the step of growing the graphene on the substrate without the metal layer.

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In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to heat a region of a substrate having a metal layer; And

An electron cyclotron resonance forming apparatus for forming an electron cyclotron resonance in a chamber by applying a microwave power; To

And a substrate graphene producing apparatus.

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to heat a region of a substrate having a metal layer; And

An electron cyclotron resonance forming apparatus for forming an electron cyclotron resonance by applying a microwave power; To

And a substrate graphene producing apparatus.

In one embodiment of the present invention, an electron cyclotron resonance forming apparatus that forms an electron cyclotron resonance by applying a microwave power includes an MW (2.45 GHz) plasma power source .

In one embodiment of the present invention,

Further comprising a gas supply regulator connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout; And a substrate graphene producing apparatus.

In one embodiment of the invention, the gas supply regulator may be characterized as comprising a solenoid valve.

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A nozzle portion for ejecting a carbon-containing gas and an etching gas; .

In an embodiment of the present invention, the shape of the nozzle portion may include, but is not limited to, a shape selected from a circle, a rectangle, a rectangle, an elongated circle, an elongated rectangle, and an elongated rectangle.

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A piezo-jet system for ejecting carbon-containing gas and etch gas; .

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

A piezo-jet system for ejecting carbon-containing gas and etch gas; .

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

A solenoid injection system for ejecting carbon-containing gas and etching gas; .

In one embodiment of the present invention, the heating unit provided in the gas ejection unit may be characterized in that the carbon-containing gas is heated to a predetermined temperature so that the activated carbon can be easily formed.

In one embodiment of the present invention, the heating portion provided in the gas ejecting portion may be characterized by heating the carbon-containing gas and the etching gas to a predetermined temperature.

In an embodiment of the present invention, the heating unit included in the gas ejecting unit may include a heating wire, but the present invention is not limited thereto.

In one embodiment of the present invention, the heating section provided in the gas ejection section is controlled by a control device of the substrate growth graphene production apparatus; .

In one embodiment of the present invention,

And a region corresponding to a region of the substrate having the metal layer; .

In one embodiment of the present invention,

And a region corresponding to a region of the substrate having the metal layer; .

In one embodiment of the present invention, an electron cyclotron resonance forming apparatus is provided in a space such as a gas ejecting portion; .

In one embodiment of the present invention, the gas ejection portion ejects gas while moving; .

In one embodiment of the present invention,

Adjusting the position of the substrate comprising the metal layer; And a substrate graphene producing apparatus.

In one embodiment of the present invention,

Further comprising a cooling unit for slowly cooling the substrate growth graphene at a constant speed so that the graphenes can uniformly grow and be uniformly arranged; And a substrate graphene producing apparatus.

In one embodiment of the present invention, the present invention comprises a substrate growth graphene fabrication apparatus; And a process platform.

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

Including solenoid injection systems; And a gas discharge portion.

In one embodiment of the present invention,

The solenoid injection system

The concentration distribution of the carbon-containing gas in the metal layer in the direction parallel to the surface of the substrate is uneven; .

In one embodiment of the present invention,

The solenoid injection system

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

The solenoid injection system

Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

The solenoid injection system being controlled by a controller of the substrate growth graphene production apparatus; .

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

Comprising a piezo injection system with a piezo electric actuator; And a gas discharge portion.

In one embodiment of the present invention,

Piezoelectric actuators

A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; .

In one embodiment of the present invention,

The piezo injection system being controlled by a controller of the substrate growth graphene production apparatus; .

In one embodiment of the present invention,

The piezo injection system

The concentration distribution of the carbon-containing gas in the metal layer in the direction parallel to the surface of the substrate is uneven; .

In one embodiment of the present invention,

The piezo injection system

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

The piezo injection system

Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

A gas ejection portion, and

A substrate having a metal layer, and

Heating device, and

A substrate growth graphene device housing an electron cyclotron resonance forming device; And a substrate graphene producing apparatus.

In one embodiment of the present invention,

Wherein the outer surface of the substrate growing graphene production apparatus is provided with an exhaust device; .

In one embodiment of the present invention,

The outer edge of the substrate growing graphene production apparatus is provided with an exhaust device and a pressure holding device; .

In one embodiment of the present invention,

Wherein the outer periphery of the substrate growing graphene manufacturing apparatus is provided with a pressure holding device for keeping the pressure inside the substrate growing graphene manufacturing apparatus constant; .

In one embodiment of the present invention,

Substrate growth The graphene fabrication device exterior

Linked to a method of positioning selected from a load-locked chamber positioning process, a roll-to-roll positioning process, or the like; .

In one embodiment of the present invention,

Substrate growth The graphene fabrication device exterior

Connected to atmospheric pressure wafer transfer system, vacuum wafer transfer system, selected locating process method; .

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas and an etching gas; And

Performing an electron cyclotron resonance plasma chemical enhanced vapor deposition (ECR-CVD); And

(ECR-CVD) is carried out by continuously performing an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) process. Since the metal of the metal layer is continuously removed by the etching gas, Growing graphene on a substrate; , &Lt; / RTI &

Said steps being controlled by a controller of a substrate growth graphene production apparatus; The method comprising the steps of:

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

A solenoid injection system for ejecting carbon-containing gas and etching gas; And a gas discharge portion.

In one embodiment of the invention, the solenoid injection system

Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

Including an injection system for ejecting carbon-containing gases and etch gases; . The injection system described above may refer to a injection system not limited to the piezo injection system, the solenoid injection system, and the like, which are presented in the present invention.

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Here, "to be described" means "to be enumerated or described and described as it is with the contents and features of the object or process".

The present invention has been described as an upper group, a group, a range of a group, a lower range of a group, and an inclusion range of a group.

Advantages and features of the present invention and methods for accomplishing the same will become apparent with reference to the embodiments described in detail in the foregoing. However, the present invention is not limited to the embodiments described in detail, but may be embodied in various forms.

In one embodiment of the present invention, generally known methods, generally known mathematical formulas, generally known laws, generally known descriptions, generally known sequences and generally known techniques, The present invention can be applied to an embodiment of the present invention which is widely disclosed without relying on the use of the present invention.

In one embodiment of the present invention, methods, orders, and techniques that are known in the art, such as those specifically known to those skilled in the art, are not intended to be applied to the embodiments of the present invention.

Those skilled in the art will readily appreciate that a person skilled in the art will be able to carry out the invention without departing from the scope of the present invention, It will be appreciated that the invention is feasible.

The terms and expressions which have been employed herein are used as terms of the detailed description of the invention but are not intended to be limiting and are not intended to limit the terms or expressions of the described or illustrated features. However, various modifications are possible within the scope of the present invention. It is, therefore, to be understood that the exemplary embodiments and optional features, as well as modifications and variations of the concepts described herein, may be resorted to by the prior art and the like, even though the invention has been described by some preferred embodiments, Variations may be considered within the scope of the invention as defined by the appended claims.

In one embodiment of the present invention, the specific embodiments provided are illustrative of useful embodiments of the present invention, and those of ordinary skill in the art should understand that changes may be made to the elements, As will be appreciated by those skilled in the art.

Those skilled in the art will appreciate that in one embodiment of the invention particular embodiments of the invention may be used including various optional configurations and methods and steps.

The specific nomenclature of the components described or illustrated herein may be resorted to as an example, insofar as those of ordinary skill in the art to which the invention pertains may specifically refer to the specific names of the same components. Accordingly, the specific names of the components described or illustrated herein should be understood based on the overall description of the invention as set forth.

In one embodiment of the present invention, it is contemplated that combinations of the described or described groups of the present invention may be used to practice the present invention, if not otherwise stated.

In one embodiment of the present invention, combinations of the groups described or described that may be included in a higher group of the present invention may be used within a higher group of the present invention, unless otherwise stated.

In an embodiment of the present invention, individual values that may be included in the scope of the group described or described above as well as when the scope of the group described or described is given in detail may be used in the scope of the above described or described group.

In an embodiment of the present invention, combinations of groups that can be included in the scope of the groups described or described above, as well as when the scope of the groups described or described is given in detail, may be used in the scope of the groups described or described above .

In an embodiment of the present invention, when a range of the described or described group is given in detail, a group which can be included in the range of the above described or described group can be used in the range of the above described or described group.

In one embodiment of the present invention, equivalently known components or variants of the components described or illustrated can be used to practice the invention without intending to be mentioned otherwise.

In one embodiment of the present invention, the contents of the present invention have been described at the level of those skilled in the art.

In one embodiment of the invention, the description set forth in the context of groups, ranges of groups, sub-ranges of groups, and ranges of groups can be realized within the scope of the description of a possible higher group of the invention.

Those skilled in the art will appreciate that the various ways of practicing the invention may be employed in the practice of the invention without undue experimentation.

Further, those skilled in the art will appreciate that those skilled in the art can make and use the embodiments of the present invention in the context of the present invention, which is fully capable of describing the group, the scope of the group, the sub-scope of the group, You can see that it can be.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

It is also to be understood that the present invention which is properly illustrated schematically is merely illustrative and that those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention . Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

In one embodiment of the present invention, methods known equivalently to the described methods may be used in an embodiment of the present invention without intending to do so. .............

100: substrate
200: metal layer
300: Carbon-containing gas
310: Etching gas of metal
500: Grain Pins
1001: Graphene device
1002: Graphene
1003: substrate
1600: Etching gas introduction direction
3001: Slit mask
3002: slit
3005: metal direction supplied by sputtering
5000A, 5100A, 5100B, 5100C: substrate growth graphene manufacturing apparatus
5010, 5110: Substrate growth Graphene manufacturing device Outer part
5020, 5120: gas supply part
5021, 5022, 5023, 5121, 5122, 5123: gas supply device
5030, 5131, 5132: gas supply regulator
5041, 5042, 5043, 5044, 5141, 5142, 5143, 5144:
5051, 5151: Electron Cyclotron Resonance Magnet (Electron Cyclotron Resonance Magnet)
5052, 5152: Plasma power source
5060, 5160: substrate on which a catalyst layer is formed
5070, 5170: substrate growth graphene
5080, 5180, 5181: Pressure holding device and exhaust device
5090, 5190: Control device of substrate growth graphene manufacturing equipment
5095, 5195: Heating device
5098, 5099: Rollers
5197: wafer (substrate) vacuum transfer system
5198: Wafer (substrate) transport system
6100A, 6100B, 6200A, 6200B: piezo injection system
6110, 6210: Piezoelectric actuator module
6120, 6220: accumulator
6130: Needle operation amplifier
6140: Needle
6250: Coupling module
6260: Control Valve Module
6270: Nozzle module
7100A, 7100B: Solenoid injection system
7110: Solenoid module (or solenoid valve module)
7120: accumulator
7130: Piston module
7140: Needle

Claims (58)

a. Providing a metal layer on the substrate Thereafter,
b. A carbon-containing gas and an etching gas, and performing an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD)
c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,
d. In the step c, a continuous electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) is performed, and the metal of the metal layer is continuously removed by the etching gas, Growing the graphene on the substrate without including the graphene; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the metal layer is made non-uniform,
Controlling the starting point and direction of growth of graphene to realize a large crystal of graphene; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
The etching gas supply
The concentration distribution of the etching gas in the metal layer is made non-uniform,
Controlling the starting point and direction of growth of graphene to realize a large crystal of graphene; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
Wherein the metal layer has a slope in the thickness of the metal layer,
The etching gas is supplied in such a manner that the metal is rapidly removed by raising the concentration of the etching gas at a high portion of the metal layer and the concentration of the etching gas is low at the low portion of the metal layer,
The lower part of the metal layer becomes the starting position of the growth of graphene; of
Characterized by a method for producing a substrate grown graphene The method of claim 4,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing substrate growth graphene by feature
The method according to claim 1,
Wherein the metal layer has a slope in the thickness of the metal layer,
The carbon-containing gas supply is configured such that the concentration of the carbon-containing gas is high at the upper portion of the metal layer, the concentration of the carbon-containing gas at the lower portion of the metal layer is high,
The etching gas is supplied in such a manner that the metal is rapidly removed by raising the concentration of the etching gas at a high portion of the metal layer and the concentration of the etching gas is low at the low portion of the metal layer,
The lower part of the metal layer becomes the starting position of the growth of graphene; of
Characterized by a method for producing a substrate grown graphene The method of claim 6,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing substrate growth graphene by feature
The method according to claim 1,
Wherein the carbon-containing gas supply causes grains to grow in a direction parallel to the surface of the substrate as the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- that; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
Wherein the etching gas supply is performed by growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer is made non-uniform; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
Wherein the carbon-containing gas supply causes a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer to be uneven,
The etching gas supply causes a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer to be uneven,
Growing graphene in a direction parallel to the surface of the substrate; of
Characterized by a method for producing a substrate grown graphene
The method according to claim 1,
The metal of the metal layer is iron, nickel, cobalt, or an alloy containing them,
The etching gas is chlorine; of
Characterized by a method for producing a substrate grown graphene a. Loading the substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the ECR-CVD chamber using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene a. Loading the substrate into a deposition chamber to form a metal layer on the substrate; And
b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And
c. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene a. Loading the substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And
c. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene a. Loading the substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And
c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And
d. Loading the substrate into an ECR-CVD chamber, supplying the carbon-containing gas and etch gas and forming substrate growth graphene by ECR-CVD; , &Lt; / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
Further comprising cooling the grown graphene on the substrate; of
Characterized by a method for producing a substrate grown graphene
a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Constituting a concentration distribution of the carbon-containing gas in the metal layer uniformly, and
c. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;
d. Performing ECR-CVD, and
e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And
f. Continuing the etching while maintaining the ECR-CVD, growing carbon so as to form a crystal structure with the already-grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method of manufacturing a substrate growth graphene
a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and
c. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;
d. Performing ECR-CVD, and
e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And
f. Continuing the etching while maintaining the ECR-CVD, growing carbon so as to form a crystal structure with the already-grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method of manufacturing a substrate growth graphene a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and
c. So that the etching gas is uniformly injected to uniformly remove the metal layer, and
d. Performing ECR-CVD, and
e. With the removal of the metal, the carbon that can not grow on the metal to be removed remains in high mobility, where the concentration of the carbon-containing gas is high, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And
f. Continuing the etching while maintaining the ECR-CVD, growing carbon so as to form a crystal structure with the already-grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method of manufacturing a substrate growth graphene The method according to any one of claims 17 to 19,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing substrate growth graphene by feature A linear graphene growing in a first direction parallel to the surface of the substrate and directly in contact with the surface is produced by the method for producing a substrate growth graft according to claim 8,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method for producing a substrate growth graphene according to claim 8; of
Characterized by a method for producing a substrate grown graphene Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface are produced by the method for producing a substrate growth graft according to claim 9,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method of manufacturing the substrate growth graphenes according to claim 9; of
Characterized by a method for producing a substrate grown graphene A linear graphene growing in a first direction parallel to the surface of the substrate and in direct contact with the surface is produced by the method for producing a substrate growth graft according to claim 10,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method for producing a substrate growth graphene according to claim 10; of
Characterized by a method for producing a substrate grown graphene The method according to any one of claims 21 to 23,
Cooling the line graphene, and
Further comprising cooling said planar graphene; of
Characterized by a method for producing a substrate grown graphene
With substrate growth graphene,
Wherein the substrate growth graphene directly contacts the surface of the substrate,
The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,
The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; of
A substrate growth graphene characterized
With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,
Wherein the substrate growth graphene has a grain boundary along a second direction parallel to the surface,
The substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; of
A substrate growth graphene characterized
26. The method of claim 26,
The first direction and the second direction being orthogonal; of
A substrate growth graphene characterized
With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,
Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a second direction parallel to the surface,
The substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; of
A substrate growth graphene characterized
29. The method of claim 28,
Wherein the first direction and the second direction are orthogonal to each other,
The interval of the grain boundaries along the first direction is constant,
The intervals of the grain boundaries along the second direction are constant; of
A substrate growth graphene characterized
A method of manufacturing an electronic component characterized by comprising a method for manufacturing a substrate growth graphene according to claim 1, claim 17, claim 18, claim 19, claim 21, claim 22 or claim 23 A method of manufacturing an electronic component, comprising the method of manufacturing a substrate growth graphene according to claim 1, claim 17, claim 18, claim 19, claim 21, claim 22 or claim 23 An electronic component Characterized in that it comprises a substrate growth graphene according to claim 25, claim 26 or claim 28
A gas supply unit for supplying a carbon-containing gas and an etching gas;
A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;
A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And
A heating device arranged to heat a region of a substrate having a metal layer; And
An electron cyclotron resonance forming apparatus for forming an electron cyclotron resonance in a chamber by applying a microwave power; To
The substrate grafting apparatus of claim 1,
A gas supply unit for supplying a carbon-containing gas and an etching gas;
A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;
A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And
A heating device arranged to heat a region of a substrate having a metal layer; And
An electron cyclotron resonance forming apparatus for forming an electron cyclotron resonance by applying a microwave power; To
The substrate grafting apparatus of claim 1,
37. The method of any one of claims 33-34,
Further comprising a gas supply regulator connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A nozzle portion for ejecting a carbon-containing gas and an etching gas; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A piezo-jet system for ejecting carbon-containing gas and etch gas; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and
A piezo-jet system for ejecting carbon-containing gas and etch gas; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
And a region corresponding to a region of the substrate having the metal layer; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The heating device
And a region corresponding to a region of the substrate having the metal layer; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The electron cyclotron resonance forming apparatus includes:
Provided in the same space as the gas ejection portion; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
Jetting gas while moving; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
Adjusting the position of the substrate comprising the metal layer; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
Further comprising a cooling unit for slowly cooling the substrate growth graphene at a constant speed so that the graphenes can uniformly grow and be uniformly arranged; of
Characterized in that the substrate growing graphene device
Comprising a substrate growth graphene production apparatus according to any one of claims 33 to 34; of
Characterized process platform
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and
Comprising a piezo injection system with a piezo electric actuator; of
The gas-
47. The method of claim 46,
The piezo electric actuator
A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; of
The gas-
47. The method of claim 46,
The piezo injection system
Controlled by a controller of the substrate growth graphene production apparatus; of
The gas-
47. The method of claim 46,
The piezo injection system
The concentration distribution of the carbon-containing gas in the metal layer in the direction parallel to the surface of the substrate is uneven; of
The gas-
47. The method of claim 46,
The piezo injection system
The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; of
The gas-
47. The method of claim 46,
The piezo injection system
Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,
The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; of
The gas-

A gas ejection portion, and
A substrate having a metal layer, and
Heating device, and
A substrate growth graphene device housing an electron cyclotron resonance forming device; of
Characterized in that the substrate growing graphene device
53. The method of claim 52,
Wherein the outer periphery of the substrate growth graphene production apparatus includes an exhaust device and a pressure holding device; of
Characterized in that the substrate growing graphene device
53. The method of claim 52,
The outer edge of the substrate growth graphene manufacturing apparatus
Linked to a method of positioning selected from a load-locked chamber positioning process, a roll-to-roll positioning process, or the like; of
Characterized in that the substrate growing graphene device
53. The method of claim 52,
The outer edge of the substrate growth graphene manufacturing apparatus
Connected to atmospheric pressure wafer transfer system, vacuum wafer transfer system, selected locating process method; of
Characterized in that the substrate growing graphene device
Supplying and discharging a carbon-containing gas and an etching gas; And
Performing an electron cyclotron resonance plasma chemical enhanced vapor deposition (ECR-CVD); And
(ECR-CVD) is carried out by continuously performing an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD) process in which the metal of the metal layer is continuously removed by the etching gas, Growing graphene on a substrate; , &Lt; / RTI &
Said steps being controlled by a controller of a substrate growth graphene production apparatus; of
Characterized by a method for producing a substrate grown graphene
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and
A solenoid injection system for ejecting carbon-containing gas and etching gas; of
The gas-
65. The method of claim 57,
The solenoid injection system
Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,
The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; of
The gas-

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