KR20160050209A

KR20160050209A - Manufacturing method of low-temperature substrate graphene growth and low-temperature substrate graphene growth and manufacturing device

Info

Publication number: KR20160050209A
Application number: KR1020140147863A
Authority: KR
Inventors: 이윤택
Original assignee: 이윤택
Priority date: 2014-10-29
Filing date: 2014-10-29
Publication date: 2016-05-11

Abstract

According to the present invention,
a. Providing a metal layer on the substrate Thereafter,
b. A carbon-containing gas and an etching gas are supplied at a temperature of 500 ° C or lower and inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed,
c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,
d. In step c), continuous inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed, wherein the metal of the metal layer is continuously removed by the etching gas, Growing the graphene on the substrate in a state where the graphene is not formed; The method comprising the steps of:
In addition,
With low temperature substrate growth graphene,
Wherein the low temperature substrate growth graphene directly contacts the surface of the substrate,
The crystal grain size in the first direction parallel to the surface of the low temperature substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the low temperature substrate growth graphene,
The crystal grain size in the first direction of the low temperature substrate growth grains is larger than that in a direction perpendicular to the surface of the graphene; Lt; RTI ID = 0.0 > low-temperature < / RTI > substrate growth graphene.
In addition,
With low temperature substrate growth graphene,
The low temperature substrate growth graphene directly contacts the surface of the substrate,
The low temperature substrate growth grains having a grain boundary along a first direction parallel to the surface,
The low temperature substrate growth grains having a grain boundary along a second direction parallel to the surface,
The low-temperature substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; Lt; RTI ID = 0.0 > low-temperature < / RTI > substrate growth graphene.
In addition,
With low temperature substrate growth graphene,
The low temperature substrate growth graphene directly contacts the surface of the substrate,
The low-temperature substrate growth graphene has a plurality of crystal grain boundaries in a first direction parallel to the surface,
Wherein the low temperature substrate growth grains have a plurality of crystal grain boundaries in a second direction parallel to the surface,
The low-temperature substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; Lt; RTI ID = 0.0 > low-temperature < / RTI > substrate growth graphene.
In addition,
A gas supply unit for supplying a carbon-containing gas and an etching gas;
A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;
A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And
A heating device arranged to heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; And
An inductively coupled plasma (hereinafter referred to as " inductively coupled plasma ") forming apparatus that forms a plasma by an induction magnetic field formed by applying a high frequency power; To
The present invention also provides a low-temperature substrate growth graphene manufacturing apparatus.

Description

TECHNICAL FIELD The present invention relates to a method for manufacturing a low-temperature substrate graphene and a low-temperature substrate graphene growth and manufacturing device,

The present invention relates to a method for producing low-temperature substrate growth graphene, a low-temperature substrate growth graphene and an electronic component including the same.

The present invention also relates to a low temperature substrate growth graphene production apparatus.

Graphene is a hexagonal material consisting of a single layer of carbon atoms, which transports electrons 100 times faster than silicon.

In addition, a growth method using a catalyst layer is mainly used as a method of growing graphene.

Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.

Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.

In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.

Therefore, there is a need for a technique for manufacturing graphene that directly contacts the surface of a substrate without leaving a catalyst metal on the substrate.

In addition, there was a need for a technique to grow graphene at low temperature, which is the temperature at which a CMOS process can be formed, since it should not cause thermal budget problems that are problematic at the formation temperature of the CMOS process and graphene.

The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a low-temperature substrate growth graphene production method, a low-temperature substrate growth graphene and an electronic component including the same.

It is another object of the present invention to provide a low-temperature substrate growth graphene manufacturing apparatus which solves the above-mentioned problems.

Therefore, in order to solve the above-described problem, the present invention requires a technique for manufacturing graphene that directly contacts the surface of a substrate without leaving a catalyst metal on the substrate. In addition, there is a need for a technique to grow graphene at low temperature, which is the temperature at which a CMOS process can be formed, since no thermal budget problem should occur in the CMOS process. Further, a technique for manufacturing a graphene of a single crystal as large as possible was required. For that reason,

a. Providing a metal layer on the substrate Thereafter,

b. A carbon-containing gas and an etching gas are supplied at a temperature of 500 ° C or lower and inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed,

c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,

d. In the step c), continuous inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed, and the metal of the metal layer is continuously removed by the etching gas, Growing the graphene on the substrate in a state where the graphene is not formed; A method for manufacturing a low-temperature substrate growth graphene is provided.

The present invention also provides a method for producing low temperature substrate growth graphenes.

In addition,

With low temperature substrate growth graphene,

Wherein the low temperature substrate growth graphene directly contacts the surface of the substrate,

The crystal grain size in the first direction parallel to the surface of the low temperature substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the low temperature substrate growth graphene,

The crystal grain size in the first direction of the low temperature substrate growth grains is larger than that in a direction perpendicular to the surface of the graphene; Lt; RTI ID = 0.0 > low-temperature < / RTI > substrate growth graphene.

In addition,

With low temperature substrate growth graphene,

The low temperature substrate growth graphene directly contacts the surface of the substrate,

The low temperature substrate growth grains having a grain boundary along a first direction parallel to the surface,

The low temperature substrate growth grains having a grain boundary along a second direction parallel to the surface,

The low-temperature substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; Lt; RTI ID = 0.0 > low-temperature < / RTI > substrate growth graphene.

In addition,

With low temperature substrate growth graphene,

The low-temperature substrate growth graphene has a plurality of crystal grain boundaries in a first direction parallel to the surface,

Wherein the low temperature substrate growth grains have a plurality of crystal grain boundaries in a second direction parallel to the surface,

The low-temperature substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; Lt; RTI ID = 0.0 > low-temperature < / RTI > substrate growth graphene.

In addition,

A gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; And

An inductively coupled plasma (hereinafter referred to as " inductively coupled plasma ") forming apparatus that forms a plasma by an induction magnetic field formed by applying a high frequency power; To

Temperature substrate growth graphene.

The present invention provides a method for producing a low-temperature substrate growth graphene in which graphene is grown on a substrate at a low temperature.

The present invention also provides low temperature substrate growth graphenes.

The present invention also provides a method for manufacturing a low temperature substrate growth graphene, a low temperature substrate growth graphene, and an electronic part including the same.

The present invention also provides an apparatus for producing a low-temperature substrate growth graphene.

1
1,
(One). Substrate,
(2). Providing a metal layer on the substrate Thereafter,
(3). A carbon-containing gas and an etching gas are supplied at a temperature of 500 ° C or lower and inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed,
(4). Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,
(5). In the process of (4), continuous inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed, wherein the metal of the metal layer is continuously removed by the etching gas, Growing the graphene on the substrate without including it,
(1) to (5), wherein the low-temperature substrate growth graphene is composed of a low-temperature substrate growth graphene and a low-temperature substrate growth graphene.
2A,
In one embodiment of the present invention, it is a plan view showing a first example of a low-temperature substrate growth graphene provided by the present invention for producing a low-temperature substrate growth graphene.
2B
Sectional view showing a first example of the low-temperature substrate growth graphene provided in the manufacturing method of the low-temperature substrate growth graphene in one embodiment of the present invention.
3
In one embodiment of the present invention, it is a plan view showing a second example of a low temperature substrate growth graphene provided by the present invention for producing a low temperature substrate growth graphene.
4
In one embodiment of the present invention, it is a plan view for explaining at least one linear graphene provided in a manufacturing method of a low temperature substrate growth graphene and a growing direction thereof.
5
In one embodiment of the present invention, it is a plan view for explaining one or more planar graphenes provided in a manufacturing method of a low temperature substrate growth graphene and a growth direction thereof.
6A
The description of FIG. 6A is described by (1) or (2) described below.
(One). If the concentration distribution of the carbon-containing gas in the metal layer is nonuniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, the position where the crystal of graphene starts to grow and the direction of growth can be controlled.
(2). The carbon-containing gas supply may include growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer is uneven; A method for producing a low-temperature substrate growth graphene
6B
The description of FIG. 6B is explained with (1) or (2) described below.
(One). With a rapid removal of the metal, the carbon that can not grow on the rapidly removed metal can grow into graphene on the metal layer where the concentration of the etching gas is low, while maintaining high mobility. In one embodiment of the present invention, nucleation of a new graphene can be inhibited, since carbon with high mobility is transferred to graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.
Therefore, even when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the growth of the graphen starts from a place where the concentration of the etching gas is low, and grows toward the place where the concentration of the etching gas is high.
(2). Supplying the etching gas includes growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer becomes uneven; A method for producing a low-temperature substrate growth graphene
6C
The description of FIG. 6C is explained with (1) or (2) described below.
(One). The manufacturing method of the low temperature substrate growth graphene to be described in this drawing can be described as follows.
a. The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.
b. In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.
c. The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.
d. ICP-CVD is performed.
e. Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.
f. If the etching is continued while maintaining the ICP-CVD, the grown graphene grows further. The etching is performed while ICP-CVD is maintained. Therefore, carbon grows to have a crystal structure with already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.
g. Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. In this case, graphenes directly contacting the surface of the substrate can realize a large crystal.
(2). The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the carbon-containing gas in the metal layer,
The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the etching gas in the metal layer,
Growing graphene in a direction parallel to the surface of the substrate; A method for producing a low-temperature substrate growth graphene
7
The description of FIG. 7 is as follows.
(One). A substrate is prepared. Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.
(2). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is supplied from the top to the bottom, the shape of the metal layer is symmetrical
8
The description of FIG. 8 is as follows.
The metal layer 200 is provided on the substrate provided with the bend. The metal layer 200 may be formed into two small and large rectangular patterns. The two large and small square patterns can have a shape in which a first area made up of a very small square is connected to a vertex at the lower left of a second area made up of a large square (for example, a first area made up of a very small square May refer to a shape in which the center point of the second square is connected to the lower left vertex of the second square area. The thickness of the metal layer 200 is inclined such that the first region is thinner than the second region and thicker from the lower left vertex to the other three vertices in the second region.
In the figure, the metal layer 200 is shown by a shade, and the metal layer 200 is thicker as the shade is thicker as the metal layer 200 is thin and the shade is faint.
9
Fig. 9 is a perspective view showing a first example of a schematic representation of a proposed low temperature substrate growth graphene production apparatus in one embodiment of the present invention. Fig.
10A
FIG. 10A is a first perspective view showing a second example of a schematic structure of a proposed low temperature substrate growth graphene production apparatus in one embodiment of the present invention. FIG.
10B
Fig. 10B is a second perspective view showing a second example of a schematic representation of a proposed low temperature substrate growth graphene production apparatus in one embodiment of the present invention. Fig.
10C
Fig. 10C is a detailed view of a second perspective view showing a second example of the present invention, schematically showing the proposed low temperature substrate growth graphene production apparatus. Fig.
11A
11A is a cross-sectional view illustrating a first example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
11B
11B is a cross-sectional view illustrating a second example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
12A
12A is a cross-sectional view illustrating a third example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
12B
12B is a cross-sectional view showing a fourth example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to be exemplary only, and are not intended to limit the scope of the invention.

Method for manufacturing low-temperature substrate-grown graphene and low-temperature substrate-grown graphene

Thus, in one embodiment of the present invention, the proposed method of producing low temperature substrate growth grains,

(One). (Or deposition) of a metal layer on a substrate,

(2). A carbon-containing gas and an etching gas are supplied at a temperature of 500 ° C or lower and inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed,

(3). Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,

(4). In the step (3), the inductively coupled plasma-chemical vapor deposition (ICP-CVD) is continuously performed, and the etching gas is supplied (or the etching gas is continuously supplied) There is provided a manufacturing method of a low-temperature substrate growth graphene in which a metal is continuously and completely removed and graphene directly contacts a substrate.

To be more specific, the method includes a removing step of removing the metal layer with an etching gas while supplying a carbon-containing gas and an etching gas at a low temperature of 500 ° C or less and maintaining inductively coupled plasma chemical vapor deposition (ICP-CVD) Growing the graphene on the substrate without including the graphene; The method comprising the steps of: Here, the low temperature of 500 DEG C or lower means the temperature at which ICP-CVD is performed.

"Inductively Coupled Plasma-Chemical Vapor Deposition (ICP-CVD)" as presented in the present invention can be expressed by "ICP-CVD ". The ICP-CVD process proposed in the present invention is an ICP-CVD process as a process for producing low-temperature substrate growth grains, which is referred to as a new technique in the present invention, in which graphenes are directly grown on a substrate by including an etching process of a metal layer in an ICP- -CVD process.

In one embodiment of the present invention, the method of manufacturing low-temperature substrate growth graphene comprises the steps of: removing the metal layer while maintaining the ICP-CVD, so that the carbon that can not grow on the removed metal remains on the metal layer It can grow into graphene. In one embodiment of the present invention, nucleation of a new graphene can be inhibited, since carbon with high mobility is transferred to graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.

In one embodiment of the present invention, in the metal layer removing process in the method of manufacturing low-temperature substrate growth graphene, an etching gas is supplied to remove the metal layer. When etching is performed for a sufficient time until the metal layer is completely removed in accordance with the manufacturing method of the low temperature substrate growth graphene, the graphen comes into contact with the substrate without interposing the metal layer therebetween.

In one embodiment of the present invention, the method of manufacturing the low temperature substrate growth grains is also described below. With the ICP-CVD maintained, the metal layer is removed by an etching gas such as chlorine. Then, on the surface of the metal layer, carbon grows as graphene. If the etching is continued while maintaining the ICP-CVD, the grown graphene grows further. The etching is performed while ICP-CVD is maintained. Therefore, carbon grows to have a crystal structure with already-grown graphene. Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate.

Therefore, unlike the conventional method using a metal catalyst, graphene can be directly grown on a substrate without containing a metal. In addition, in the conventional method of transferring a pattern of a graphene in advance, even if a small pattern of micrometer scale is tried to be made, damage is caused at the time of transferring. However, in the method of manufacturing a low-temperature substrate growth graphene according to the present invention, a graphene pattern having a fine line width can be formed on a substrate by freely adjusting the shape of the metal layer by performing selective etching. In addition, in the conventional method of transferring graphene to a large area of the substrate and then performing patterning by etching, there arises a problem that graphene is not accurately provided when the graphene is applied to a substrate having a structure already formed. However, in the method of manufacturing low-temperature substrate growth graphene disclosed in the present invention, the problem is not caused by freely adjusting the shape of the metal layer by performing selective etching. Here, the selective etching means performing the etching process to leave only a desired portion.

In one embodiment of the present invention, in addition to the method of performing the selective etching, the method of forming the metal layer may further include a step of forming a resist mask by dissolving the resist mask after deposition of the metal layer, And removing the metal layer formed on the surface of the metal layer and providing a metal layer having a desired pattern and shape.

In one embodiment of the present invention, the method of manufacturing the low temperature substrate growth graphene is performed by appropriately setting the supply environment of the carbon-containing gas and the etching gas, and performing the growth of the graphene, .

In one embodiment of the present invention, the method of manufacturing low-temperature substrate growth graphene is carried out by appropriately setting the supply environment of the carbon-containing gas and the etching gas and the growth environment of the graphene, A single crystal of graphene may be provided.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the metal of the metal layer is nickel and chlorine can be used as the etching gas. However, in one embodiment of the present invention, the method of manufacturing the low temperature substrate growth graphene may use any metal capable of growing carbon to graphene, and an etching gas for the metal. In one embodiment of the present invention, the arbitrary metal may mean a metal selected from a single crystal metal, a polycrystalline metal, and the like. In one embodiment of the present invention, the optional metal may refer to a metal in which the atoms are aligned.

In one embodiment of the present invention, in the method of manufacturing low temperature substrate growth graphene, the metal layer may refer to a metal layer in which the atoms are aligned.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the metal of the metal layer may be a pure metal composed of one metallic element capable of being grown as graphene by carbon, An alloy composed of elements can be used.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the metal layer may be subjected to chemical mechanical polishing (CMP) as an additional option to adjust the thickness and flatness of the metal layer to a desirable level have.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the metal layer may mean a metal layer on which the metal layer is deposited and the selective etching is performed.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the metal layer may mean a metal layer which has undergone the deposition of a metal layer and CMP, followed by selective etching.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the metal layer may mean a metal layer selected from one or more of a selectively etched metal layer, a metal layer subjected to a CMP process.

In one embodiment of the present invention, in the method of manufacturing low-temperature substrate growth graphene, the substrate may be placed into an ICP-CVD chamber with a metal layer provided to perform the method of manufacturing low-temperature substrate growth graphene.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the step of positioning the substrate includes a load-locked chamber positioning process, a roll-to-roll positioning process, Method can be provided.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the step of positioning the substrate may comprise a method of positioning selected among an atmospheric pressure wafer transfer system, a vacuum wafer transfer system.

In one embodiment of the present invention, the method of manufacturing the low temperature substrate growth graphene can appropriately adjust the environment of the substrate in the process before and after the formation of the graphene by using the load-lock chamber.

In one embodiment of the present invention, the method of manufacturing low temperature substrate growth graphene can suitably control the graphene forming environment by using a load-lock chamber.

In one embodiment of the present invention, the method of making low temperature substrate growth grains can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, the temperature and the holding time of the ICP-CVD process are important factors in addition to the kind of the carbon-containing gas and the etching gas, the supply pressure, the supply range, the supply amount, Lt; / RTI >

In one embodiment of the present invention, the method of making low temperature substrate growth grains can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, in addition to the kind of the carbon-containing gas and the etching gas and the supply pressure, the supply pressure of the hydrogen and the inert gas, the supply range, the supply amount, Temperature and holding time can be an important factor.

In one embodiment of the present invention, in the method of making the low temperature substrate growth graphene, the inert gas may be supplied with the carbon-containing gas while performing the method of manufacturing the low temperature substrate growth grains, have.

In an embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the step of providing the metal layer provided on the substrate includes at least one of deposition, electron beam deposition, sputtering, atomic layer deposition (ALD ), A physical vapor deposition (PVD) method, and a chemical vapor deposition (CVD) method.

In one embodiment of the present invention, in the method of manufacturing low temperature substrate growth graphene, forming graphene by ICP-CVD means generating high density plasma at low pressure to form graphene. The chamber of the ICP-CVD apparatus may be formed by injecting (or supplying) a carbon-containing gas and an etching gas while maintaining a degree of vacuum of, for example, several to several hundreds of mTorr and applying a high frequency power of several hundred kHz to several hundred MHz And the graphene is formed by the reaction of the carbon-containing gas on the metal layer formed on the substrate in the chamber. Therefore, the low-temperature substrate growth graphene is continuously subjected to the inductively coupled plasma-chemical vapor deposition (ICP-CVD), and the etching gas is continuously supplied And a method of manufacturing low-temperature substrate growth grains in which the metal layer is entirely removed and graphene is directly in contact with the substrate. In the ICP-CVD process, it is important that the carbon-containing gas is uniformly injected in the entire metal layer region to form a uniform plasma. In addition, it is important to uniformly spray the etching gas to uniformly remove the metal layer Do. By performing the above process, the temperature of the substrate can be maintained at a low temperature of 500 ° C or less, and the low temperature substrate growth grains in which the graphene directly contacts the substrate can be formed.

It is assumed that a certain concentration of etching gas contacts the surface of the metal layer and the metal is etched in the same manner.

In this case, when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the starting point of graphene growth becomes random.

On the other hand, if the concentration distribution of the carbon-containing gas is uneven in the metal layer, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.

Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, the position where the crystal of graphene starts to grow and the direction of growth can be controlled.

In addition, if the concentration distribution of the etching gas can be set non-uniformly, the removal of the metal becomes faster where the concentration of the etching gas is high.

Thus, with a rapid removal of the metal, the carbon that can not grow on the rapidly removed metal can grow into graphene on a metal layer at a low concentration of the etching gas, while maintaining high mobility. In one embodiment of the present invention, nucleation of a new graphene can be inhibited, since carbon with high mobility is transferred to graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.

Therefore, even when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the growth of the graphen starts from a place where the concentration of the etching gas is low, and grows toward the place where the concentration of the etching gas is high.

Thus, by appropriately setting the concentration distribution of the etching gas, it is possible to control the position where the graphene crystals start to grow and the direction in which the graphene grows.

By controlling the starting point and direction of graphene growth in this manner, the grain boundaries can be controlled to a predetermined position because grain boundaries of graphene are formed only at the growth start point and at the growth end point connected to the graphenes, By reducing the growth start point of graphene, a very large grain size can be realized.

Therefore, in an embodiment of the present invention, if the shape of the metal layer is formed so as to have a three-dimensional height, and the concentration of the etching gas at the high portion of the metal layer is increased to quickly remove the metal, Can realize a large crystal grain size.

It is also possible to appropriately combine the setting of the concentration distribution of the carbon-containing gas and the setting of the concentration distribution of the etching gas in the metal layer as described above to control the position where the growth of graphene crystals starts and the growth direction.

In one embodiment of the present invention, a method for producing low temperature substrate growth graphene can be described as follows.

(One). The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.

(3). The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.

(4). ICP-CVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the ICP-CVD, the grown graphene grows further. The etching is performed while ICP-CVD is maintained. Therefore, carbon grows to have a crystal structure with already-grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. (1) to (7), wherein the graphene directly contacting the surface of the substrate can realize a large grain diameter.

In one embodiment of the present invention, in order to prevent a metal layer from being formed on a portion other than the necessary portion, removal using a resist mask or the like can be carried out as described below. (One). Thereby forming a resist mask. Techniques for forming a resist mask are known to those skilled in the art and are therefore not described further herein, (2). A deposition process is performed to form a metal layer, (3). Next, the resist mask and the metal layer formed on the surface of the resist mask are removed by dissolving the resist mask, and a metal layer having a desired pattern and shape is provided. The steps following the steps (1) to (3) are performed .

In one embodiment of the present invention, this embodiment is a method for producing low-temperature substrate growth graphene in which graphene is grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the low temperature substrate growth grains is described as <A>, , <C> below.

<A>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). The concentration of the carbon-containing gas is raised at a low point (point A) on one side of the metal layer in the metal layer.

(5). The concentration of the etching gas is raised so that the metal is quickly removed, and the concentration of the etching gas is low in the lower portion (A point) on one side of the metal layer.

(6). ICP-CVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low point (point A) on one side of the metal layer becomes the start point of the growth of graphene.

(8). If the etching is continued while maintaining the ICP-CVD, the grown graphene grows further. The etching is performed while ICP-CVD is maintained. Therefore, carbon grows to have a crystal structure with already-grown graphene. At this time, the direction of growth of the graphene grows graphene from low to high in the metal layer (that is, it grows from left to right or from right to left in this embodiment)

(9). (1) to (9), wherein the metal layer is finally removed, and the graphene is brought into direct contact with the surface of the substrate.

(One). A substrate is prepared.

(4). In the metal layer, the concentration of the carbon-containing gas is raised at the low points (points A and B) of the metal layer.

(5). The concentration of the etching gas is set at a high level on the metal layer so that the metal is quickly removed, and the concentration of the etching gas is set low in the metal layer (points A and B).

(6). ICP-CVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low points (points A and B) of the metal layer are the starting positions for the growth of graphene.

(8). If the etching is continued while maintaining the ICP-CVD, the grown graphene grows further. The etching is performed while ICP-CVD is maintained. Therefore, carbon grows to have a crystal structure with already-grown graphene. At this time, the direction of growth of the graphene grows graphene from the low to the high position of the metal layer (that is, it grows laterally in this embodiment)

(9). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. In one embodiment of the present invention, the grain boundaries of graphene occur in the central portion where the growth direction collides. In addition, the step (1) to (9), in which the grains of graphene can occur at the beginning of growth, may be provided.

<C>

This embodiment is characterized in that when repeating the above embodiment B twice, by rotating the direction of the slit mask by 90 degrees, a low-temperature substrate growth graphene (hereinafter referred to as " graphene grains " .

(One). On the basis of the description of the embodiment B , a slit mask is provided so that the slit is located in the left-right direction. Incidentally, in one embodiment of the present invention, the slits are repeatedly arranged regularly (the width of the slit is narrower than the slit described below).

(2). Then, metal is supplied to form a metal layer in a line. Then, the height of the metal layer changes along the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(3). Based on the description of the above embodiment , a method of manufacturing low temperature substrate growth graphene is carried out. Then graphene grows up and down.

(4). When all of the metal is removed, the line graphene (s) are formed.

(5). Thereafter, the line of the substrate yes to the upper pin (s) based on the technique described in Example , the slit is linearly arranged yes and parallel to the longitudinal direction of the pin (s), exactly linear graphene (or linearly arranged A slit mask is provided so that the slit is disposed in the middle of the graphenes. Incidentally, the slits are repeatedly arranged regularly.

(6). Then, metal is supplied to form a metal layer. Then, the height of the metal layer changes along the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene (s). Further, a part of the line-shaped graphene (s) may remain in the metal layer by adjusting the amount of the supplied metal, the size of the slit of the slit mask, and the distance from the substrate.

(7). Thereafter, a manufacturing method of the low temperature substrate growth graphene is carried out based on the description of the above embodiment . Then, the remaining linear line graphene (s) is set as the starting position, and the plane graphene is moved in the direction orthogonal to the long direction of the slit of the slit mask, that is, perpendicular to the long direction of the linear graphene , And grow in the lateral direction.

(8). (1) to (8) in which, when the metal is completely removed, plane grains are formed which are divided into crystal grains of a square pattern (or checker pattern).

Therefore, in one embodiment of the present invention, the method of manufacturing the low-temperature substrate growth graphene is characterized in that the graphene is arranged at regular intervals by a vertical method (first direction) and a lateral method (second direction) Or the like. That is, graphene made of a single crystal of a square can be formed so as to cover the substrate.

In one embodiment of the present invention, since the method of manufacturing low-temperature substrate growth grains can control the start point and direction of growth of graphene on the substrate, it is possible to control the grain boundaries in various shapes such as a square shape or a rectangular shape . Furthermore, the area of the graphene of the single crystal can be significantly increased as compared with the conventional one. Of course, in one embodiment of the present invention, a small amount of polycrystal may remain with the single crystal.

<A>

(One). The shape of the metal layer is formed so as to have a three-dimensional height in the vertical direction in a line. For example, the thickness of the metal layer is set from bottom to top, and the thickness gradually increases and rapidly returns to its original shape. That is, the metal layer is formed so as to have three-dimensional height in the vertical direction in a line. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(4). ICP-CVD is performed.

(7). (1) to (7), wherein the metal layer is finally removed, and the line-like graphene is brought into direct contact with the surface of the substrate.

(One). After the description of the embodiment A , the shape of the metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the metal layer is formed so as to have a three-dimensional height in the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, based on the description of the embodiment A , a method of manufacturing the low temperature substrate growth graphene is carried out. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). (1) to (3) in which the metal grains are finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate, wherein the surface graphenes are formed of a single crystal. have.

<C>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed into two square patterns of small and large size. The two large and small square patterns can have a shape in which a first area made up of a very small square is connected to a vertex at the lower left of a second area made up of a large square (for example, a first area made up of a very small square May refer to a shape in which the center point of the second square is connected to the lower left vertex of the second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the techniques described in Example <A>, the low temperature growth substrate Yes performs the manufacturing method of the pin. Then, graphene grows for the first time near the vertices of the first region, that is, the lower left corner of the two small rectangular patterns. The graphenes growing here can generally be polycrystalline.

(3). Continuing the manufacturing method of the low-temperature substrate growth graphene based on the description of the embodiment A as described above, at least one of the polycrystals due to the bending near the lower left corner of the two large and large square patterns, Respectively. Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphene is grown such that the single crystal is oriented to the other three vertices in the second region, that is, to the right upper side.

(5). (1) to (5), in which the crystal nuclei are grown by bending, and thus, the finally obtained small and large square grains having a square pattern form a single crystal. Followed by a subsequent step.

<D>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed in a checkerboard pattern. The checkerboard pattern may have a first region of a very small square connected to a lower left vertex of a second square region (e.g., a center point of a first region of a very small square center point) may refer to a shape connected to the lower left vertex of a second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the techniques described in Example <A>, the low temperature growth substrate Yes performs the manufacturing method of the pin. Then, graphene grows for the first time near the apex of the first region, that is, the lower left corner of the checkered pattern. The graphenes growing here can generally be polycrystalline.

(3). And anyway based on the technique described in Example <A>, the low-temperature substrate growth yes least one of poly-crystalline by bending in the vicinity of the apex of Continuing the manufacturing method of the pin, the left side of the grid pattern under the encased by a nucleation . Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(5). (1) to (5), in which the crystal grains to be grown here are embedded by bending, so that the finally obtainable checkerboard pattern graphene is a single crystal. can do.

In one embodiment of the present invention, the shapes of the first region and the second region are not limited to a square, and may be any shape. For example, if the second region has a plane such as a rectangular shape and is inclined so as to become thicker toward the other three apexes from the lower left vertex, which is the first region, a large area graphene can be formed have. On the other hand, the first region may be any arbitrary shape capable of forming a bend, and may have a shape other than a square, such as a circular shape. In one embodiment of the present invention, the metal layer has a shape in which a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate are in contact with the curvature, The thickness of the metal layer may be thinner than the thickness of the second region and the second region may be inclined to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend. (For example, (1) a first region consisting of a very small square extending in parallel to the surface of the substrate and a vertex below the left side of the second region (the apex portion widening parallel to the surface of the substrate) (2) The center point of the first region made up of a very small square is a vertex located at the lower left of the second region made of a large square having a tilt (the apex portion is parallel to the surface of the substrate Widened).

<A>

(One). The metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. For example, the thickness of the metal layer is set so that the thickness gradually increases from the bottom to the top, and repeats a sudden return to the original state. That is, the metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

(2). In one or more metal layers, the concentration of the carbon-containing gas is increased at the bottom of the at least one metal layer.

(3). The height of the at least one metal layer is set so as to raise the concentration of the etching gas so that the metal is quickly removed and the concentration of the etching gas at the lower portion of the at least one metal layer is low.

(4). ICP-CVD is performed.

(5). Then, with rapid removal of the metal, the carbon that can not grow on the rapidly removed metal grows into graphene at a low concentration of at least one etching gas while maintaining high mobility. That is, the lower part of the at least one metal layer becomes the starting position of the growth of graphene.

(7). Finally, the metal layer is completely removed and the line-like graphene comes into direct contact with the surface of the substrate. Therefore, the above-described linear graphene can be provided with the steps (1) to (7) consisting of the grain boundary being formed in the middle.

(One). After the description of the embodiment A , the shape of the at least one metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the at least one metal layer is formed so as to have a three-dimensional height in the left-right direction in accordance with the grain boundary formed in the middle. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(3). (1) to (3) in which the metal layer is finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate.

<C>

(One). The embodiments based on the techniques described in <A>, and one or more linearly arranged yes form the pin, and on the basis of the technique described in Example , may be one or more surfaces Yes form a pin.

(2). Thus, the grain boundaries of the grown portion of the plane graphen grow until it reaches the side plane graphene (the portion where another linear graphene was disposed).

(3). When graphenes are formed in this way, line segments connecting lattice points close to each other become grain boundaries, and single crystals are arranged in a lattice pattern. Here, the smaller the size of the checkered pattern, the smaller the graphene crystal size, but the shorter the manufacturing time for covering the substrate. Therefore, the size and number of the checkered pattern can be appropriately selected according to the application and the manufacturing cost, and can include the process leading to (1) to (3).

<A>

(2). The concentration distribution of the carbon-containing gas in one or more metal layers is uniformly configured.

(4). ICP-CVD is performed.

<C>

(2). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(4). ICP-CVD is performed.

<A>

(One). A substrate is prepared.

(4). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(6). ICP-CVD is performed.

(One). A substrate is prepared.

(6). ICP-CVD is performed.

<C>

(4). When all of the metal is removed, the line graphene (s) are formed.

<A>

(4). ICP-CVD is performed.

<C>

<D>

In one embodiment of the present invention, the setting of the concentration distribution of the carbon-containing gas can be set by adjusting the partial pressure of the carbon-containing gas. In one embodiment of the invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the hydrogen gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the argon gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the inert gas.

In one embodiment of the present invention, the carbon-containing gas may be supplied as hydrogen.

In one embodiment of the present invention, the carbon-containing gas may be supplied as argon.

In one embodiment of the present invention, the carbon-containing gas may be supplied, such as hydrogen and argon.

In one embodiment of the present invention, the concentration distribution of the etching gas is set by adjusting the partial pressure of the etching gas. In one embodiment of the present invention, the partial pressure of the etching gas can be adjusted by diluting the chlorine to a desired concentration, but is not limited thereto.

In one embodiment of the present invention, a process of forming the shape of the metal layer to have a three-dimensional height or a process of forming the thickness of the metal layer non-uniformly can be described as follows.

(One). One or more slits are formed on a metal foil or the like, and a slit mask is formed. Then, the slit mask is arranged apart from the substrate by a predetermined distance, and the metal is supplied by sputtering to reach the substrate via the slit mask. Then, the metal layer becomes thick at a portion opposed to the slit of the slit mask, and the metal layer becomes thinner as it moves away from the slit.

(2). One or more slits are formed on a metal foil or the like, and a slit mask is formed. When the slit mask is spaced apart from the substrate by a predetermined distance and the sputtering direction is horizontal with respect to the substrate surface, the metal layer is formed thick in the vicinity of the slit and the thickness of the metal layer Lt; / RTI >

(3). When the slit mask is spaced apart from the substrate by a predetermined distance and the sputtering direction is perpendicular to the surface of the substrate, the metal layer is formed thick in the vicinity of the slit and the thickness of the metal layer is thin Jima,

(4). It is also possible to use a plurality of obstacles in contact with the substrate surface instead of the slit mask. In this case, since the obstacle becomes an obstacle to sputtering, the metal layer becomes thinner in the vicinity of the obstacle, and the metal layer becomes thicker as it gets farther from the obstacle,

(5). In addition, when metal is supplied by sputtering, one or more movable shutters may be provided and the shutter may be closed gradually. (1) to (5), wherein the metal layer in the vicinity of the first closed portion of the shutter is thin and the metal layer in the vicinity of the closed portion at the end of the shutter is thickened. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from being formed at a portion other than the necessary portion.

In one embodiment of the present invention, after the ICP-CVD process in the method of manufacturing the low temperature substrate growth graphene, the cooling process may be performed on the formed graphene. The cooling step is a method for uniformly growing the formed graphenes so that the graphenes can be uniformly arranged. Since rapid cooling may cause cracking of the graphene, it is preferable that the cooling step is gradually cooled at a constant speed. For example, it is possible to use a method such as natural cooling. The natural cooling is obtained by simply removing the heat source used for the heat treatment. Thus, it is possible to obtain a sufficient cooling rate even by removing the heat source.

In an embodiment of the present invention, the method of manufacturing the low temperature substrate growth graphene may further comprise supplying a reducing gas together with the carbon-containing gas and the etching gas. For example, the reducing gas may comprise hydrogen, helium, argon, or nitrogen.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the etching gas may mean an etching gas containing chlorine or chlorine. In one embodiment of the present invention, the etching gas is not limited to an etching gas containing chlorine or chlorine, and can be used as long as it is an etching gas of a metal layer capable of growing graphene.

In one embodiment of the present invention, in the method of manufacturing low temperature substrate growth graphene, the number of graphene layers may be several to fifty, but is not limited thereto. The ICP-CVD process, the metal layer removal (etching) process and the cooling process for providing the number of graphene layers are performed at least once.

In one embodiment of the present invention, in the method of making the low temperature substrate growth graphene, the carbon-containing gas can mean a carbon-containing compound having from about 1 to about 10 carbon atoms, but is not limited thereto. For example, the carbon-containing gas may be selected from cyclopentane, cyclopentadiene, hexane, hexene, cyclohexane, cyclohexadiene, benzene, toluene, carbon monoxide, carbon dioxide, methane, ethane, ethylene, ethanol, acetylene, But are not limited to, those selected from the group consisting of butane, butylene, butadiene, pentane, pentene, pentene, pentadiene, and combinations thereof.

In an embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the carbon-containing gas and the etching gas in the chamber of the ICP-CVD apparatus are either only the carbon-containing gas and the etching gas, , &Lt; / RTI > and the like. Further, in one embodiment of the present invention, the carbon-containing gas and the etching gas may comprise hydrogen in addition to the carbon-containing gas and the etching gas.

In one embodiment of the present invention, the carbon-containing gas may be meant to include hydrogen in addition to the compound comprising carbon. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, the carbon-containing gas may mean containing hydrogen along with a gas capable of forming activated carbon. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas such as argon, helium, etc., in addition to the compound comprising carbon.

In one embodiment of the invention, the carbon-containing gas may be meant to include an inert gas, such as argon, helium, etc., along with a gas capable of forming activated carbon.

In one embodiment of the present invention, in the method of manufacturing low temperature substrate growth graphene, the thickness of the metal layer may have a thickness selected from the range of about 35 nm to 500 nm, but is not limited thereto.

In one embodiment of the present invention, in the method of manufacturing low temperature substrate growth graphene, the thickness of the metal layer may have a thickness selected from a range of from about several tens nanometers to several tens of micrometers, but is not limited thereto.

In one embodiment of the present invention, the method of manufacturing the low temperature substrate growth graphene can be provided with a large area graphene by freely adjusting the size of the metal layer. In addition, since the carbon-containing gas and the etching gas are supplied in a gaseous state (supplied in a gaseous state) and there is no restriction on the shape of the metal layer, various types of graphenes can be provided. For example, graphene having a three-dimensional solid shape may also be provided.

In one embodiment of the present invention, the method of manufacturing the low temperature substrate growth graphene can control the thickness of the graphene by controlling the ICP-CVD execution time and the etching execution time.

In one embodiment of the present invention, the method of manufacturing the low temperature substrate growth graphene can control the thickness of the graphene by simultaneously controlling the ICP-CVD execution time and the etching execution time.

In one embodiment of the present invention, a method of fabricating a low temperature substrate growth graphene includes providing a metal layer on a substrate, thereafter supplying a carbon-containing gas and an etch gas at a low temperature of 500 DEG C or less, and performing an inductively coupled plasma chemical vapor deposition And a removal step of removing the metal layer with an etching gas while maintaining an inductively coupled plasma-chemical vapor deposition (ICP-CVD), thereby growing graphene on the substrate without a metal layer; The method comprising the steps of:

In one embodiment of the present invention, in a method of manufacturing a low temperature substrate growth graphene, the substrate is provided with one or more Piezo material, magnetic particles, particles having charge, It can mean.

In one embodiment of the invention, Piezo refers to the converse piezoelectric effect. That is, mechanical deformation occurs when an electric field is applied.

In one embodiment of the present invention, in the method of manufacturing low temperature substrate growth graphene, the metal of the metal layer is nickel and the etching gas is chlorine; The method comprising the steps of:

In one embodiment of the present invention, the method of making the low temperature substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into an ICP-CVD chamber, supplying the carbon-containing gas and etch gas and forming a low temperature substrate growth graphene by ICP-CVD; , &Lt; / RTI &

c. Wherein the substrate is sequentially loaded into the deposition chamber and the ICP-CVD chamber using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, it may further comprise cooling the low temperature substrate growth graphene.

b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

c. Loading the substrate into an ICP-CVD chamber, supplying the carbon-containing gas and etch gas and forming a low temperature substrate growth graphene by ICP-CVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, it may further comprise cooling the low temperature substrate growth graphene.

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

d. Loading the substrate into an ICP-CVD chamber, supplying the carbon-containing gas and etch gas and forming a low temperature substrate growth graphene by ICP-CVD; , &Lt; / RTI &

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, it may further comprise cooling the low temperature substrate growth graphene.

In one embodiment of the present invention, the method of manufacturing the low temperature substrate growth graphene may additionally include several steps, but it is basically to provide a carbon-containing gas and an etching gas at a low temperature of 500 DEG C or less, And removing the metal layer with an etching gas while maintaining plasma chemical vapor deposition (ICP-CVD), thereby growing graphene on the substrate without the metal layer.

In one embodiment of the present invention, the method of manufacturing the low temperature substrate growth graphene may additionally include several steps, but it is also possible to provide an etching gas and a carbon-containing gas at a low temperature of 500 DEG C or lower, And removing the metal layer with an etching gas while maintaining plasma chemical vapor deposition (ICP-CVD), thereby growing graphene on the substrate without the metal layer.

'' -

a. Providing a metal layer on the substrate Thereafter,

d. In the step c), continuous inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed, and the metal of the metal layer is continuously removed by the etching gas, Growing the graphene on the substrate in a state where the graphene is not formed; of

The present invention also provides a method for manufacturing a low-temperature substrate growth graphene.

In one embodiment of the present invention, in the method of producing low temperature substrate growth graphene, the carbon-containing gas supply is configured to non-uniformly distribute the concentration distribution of the carbon-containing gas in the metal layer, To realize a large crystal graphene; .

In one embodiment of the present invention, in the method of manufacturing a low-temperature substrate growth graphene, the etching gas supply is performed such that the concentration distribution of the etching gas in the metal layer is made non-uniform and the starting point and direction of the growth of graphene are controlled, Realizing a large decision of graphene; .

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the metal layer has a slope in the thickness of the metal layer, and the etching gas supply is performed such that the concentration of the etching gas is increased at the high portion of the metal layer, And the concentration of the etching gas is low in the lower part of the metal layer so that the lower part of the metal layer becomes the starting position of the growth of graphene; .

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the metal layer has a first region spreading parallel to the surface of the substrate and a second region spreading parallel to the surface of the substrate, Wherein the first region is inclined with respect to the thickness of the metal layer so that the thickness of the metal layer is thinner than the second region and the second region is thicker than the bend Being; .

In one embodiment of the invention, in the method of manufacturing low temperature substrate growth graphene, the metal layer has a slope in the thickness of the metal layer, and the carbon-containing gas supply is such that the concentration of the carbon- The concentration of the carbon-containing gas is set to a low level in the metal layer, and the concentration of the carbon-containing gas is set to a low level in the metal layer. The concentration of the gas is set to be low so that the lower portion of the metal layer becomes the starting position of the growth of graphene; .

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the carbon-containing gas supply is performed in such a manner that the concentration distribution in the direction parallel to the surface of the substrate is uneven among the concentration distribution of the carbon- Thus, growing graphene in a direction parallel to the surface of the substrate; .

In one embodiment of the present invention, in the method of manufacturing the low-temperature substrate growth grains, the etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer to be uneven, Growing the graphene in a direction parallel to the surface of the graphene; .

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene,

The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the carbon-containing gas in the metal layer,

The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the etching gas in the metal layer,

Growing graphene in a direction parallel to the surface of the substrate; .

In one embodiment of the present invention, a method of making a low temperature substrate growth graphene comprises a method of making a low temperature substrate growth graphene described as being selected from the following <A>, , <C> :

<A>

The carbon-containing gas supply may include growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer is uneven; Wherein the low-temperature substrate growth graphene is a low-temperature substrate grown graphene.

Supplying the etching gas includes growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer becomes uneven; Wherein the low-temperature substrate growth graphene is a low-temperature substrate grown graphene.

<C>

Growing graphene in a direction parallel to the surface of the substrate; Wherein the low-temperature substrate growth graphene is a low-temperature substrate grown graphene.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the metal of the metal layer is iron, nickel, cobalt or an alloy containing them, and the etching gas is chlorine; .

In one embodiment of the present invention, a method of manufacturing low temperature substrate growth grains,

c. Wherein the substrate is sequentially loaded into the deposition chamber and the ICP-CVD chamber using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the low temperature substrate growth graphene; The method comprising the steps of:

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the low temperature substrate growth graphene; The method comprising the steps of:

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the low temperature substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of making a low temperature substrate growth graphene further comprises cooling the graphene grown on the substrate; The method comprising the steps of:

In one embodiment of the present invention, in the method of producing low temperature substrate growth graphene, growing graphene is performed by a roll-to-roll process; .

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;

b. Constituting a concentration distribution of the carbon-containing gas in the metal layer uniformly, and

c. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;

d. Performing ICP-CVD, and

e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And

f. Etching is continued while ICP-CVD is maintained to grow carbon so as to form a crystal structure with already-grown graphene, and

g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and

h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To

The method of manufacturing a low-temperature substrate growth graphene according to claim 1,

b. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and

d. Performing ICP-CVD, and

c. So that the etching gas is uniformly injected to uniformly remove the metal layer, and

d. Performing ICP-CVD, and

e. With the removal of the metal, the carbon that can not grow on the metal to be removed remains in high mobility, where the concentration of the carbon-containing gas is high, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And

In one embodiment of the present invention, in the method of manufacturing the low-temperature substrate growth graphene, the supply of the etching gas of the metal may be performed before the ICP-CVD is performed, and therefore, A method of manufacturing low-temperature substrate growth graphene performing ICP-CVD may be provided.

In one embodiment of the present invention, in the method of manufacturing the low temperature substrate growth graphene, the etching gas supply of the metal may be performed before supplying the carbon-containing gas, and therefore, And a method of manufacturing a low-temperature substrate growth graphene supplying carbon-containing gas on the way.

In one embodiment of the present invention, a method of making a low temperature substrate growth graphene further comprises cooling the graphene directly contacting the surface of the substrate; The method comprising the steps of:

Linear graphenes which grow in a first direction parallel to the surface of the substrate and are in direct contact with the surface are produced by a process for producing low-

Producing planar graphenes growing in a second direction parallel to the surface from the linear graphenes and in direct contact with the surface by a process for producing low-temperature substrate growth grains; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing low temperature substrate growth graphene further comprises cooling the line graphene and cooling the plane graphene; The method comprising the steps of:

In one embodiment of the present invention, the present invention provides a method of fabricating a substrate having low temperature substrate growth graphene,

The crystal grain size in the first direction of the low temperature substrate growth grains is larger than that in a direction perpendicular to the surface of the graphene; Temperature substrate growth graphene.

The low-temperature substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; Temperature substrate growth graphene. In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Temperature substrate growth graphene.

The low-temperature substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; Temperature substrate growth graphene. In one embodiment of the present invention, in the present invention, the first direction and the second direction are orthogonal, the intervals of the grain boundaries along the first direction are constant, and the grain boundaries along the second direction The spacing is constant; Temperature substrate growth graphene.

In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized by comprising a method of manufacturing a low temperature substrate growth graphene.

In one embodiment of the present invention, a method of manufacturing an electronic component may mean a method of manufacturing a transistor, but the present invention is not limited thereto.

In one embodiment of the present invention, a manufacturing method of an electronic component may mean a manufacturing method of a central processing unit (CPU).

In one embodiment of the present invention, a method of manufacturing an electronic component may refer to a method of manufacturing a memory.

In one embodiment of the present invention, the present invention provides an electronic component comprising the method of manufacturing an electronic component, characterized by comprising a method of manufacturing a low-temperature substrate growth graphene.

In one embodiment of the present invention, the present invention comprises an electronic component characterized by comprising a low temperature substrate growth graphene.

In one embodiment of the present invention, the electronic component is a transistor; But is not limited thereto.

In one embodiment of the present invention, a transistor means a transistor including a graphen transistor.

In one embodiment of the present invention, the electronic component is a central processing unit (CPU); .

In one embodiment of the present invention, the electronic component is a memory; .

''

Low-temperature substrate growth graphene manufacturing equipment

In one embodiment of the present invention, the present invention provides a method for producing a carbon-containing gas, comprising the steps of: supplying a carbon-containing gas and an etching gas; supplying a gas- And a metal layer disposed in contact with the ejected carbon-containing gas and the etching gas, and a metal layer in contact with the ejected carbon-containing gas and the etching gas. A heating device, and an inductively coupled plasma (hereinafter referred to as " inductively coupled plasma ") forming device for forming a plasma by an induction magnetic field formed by applying a high frequency power.

In one embodiment of the present invention, the present invention provides a gas supply system comprising: a gas supply unit for supplying a carbon-containing gas and an etching gas;

A heating device arranged to locally heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; And

An inductively coupled plasma (hereinafter referred to as " inductively coupled plasma ") forming apparatus that forms plasma in a chamber by an induction field formed by applying a high frequency power; The present invention provides a low-temperature substrate growth graphene manufacturing apparatus.

An inductively coupled plasma (hereinafter referred to as " inductively coupled plasma ") forming apparatus that forms a plasma by an induction magnetic field formed by applying a high frequency power; The present invention provides a low-temperature substrate growth graphene manufacturing apparatus.

In one embodiment of the present invention, the present invention further comprises a gas flow controller (gas supply regulator) connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas outlet, To provide a pin manufacturing apparatus.

In one embodiment of the present invention, the carbon-containing gas and the etching gas further comprise an inert gas and hydrogen gas.

In one embodiment of the present invention, the carbon-containing gas and the etching gas further comprise an inert gas.

In one embodiment of the present invention, the gas ejection portion is characterized by having a storage portion in which the carbon-containing gas and the etching gas are accommodated, and a nozzle portion for ejecting the carbon-containing gas and the etching gas.

In one embodiment of the present invention, the gas ejection portion is characterized by comprising a reservoir in which the carbon-containing gas and the etching gas are accommodated, and a piezo injection system for ejecting the carbon-containing gas and the etching gas.

In one embodiment of the present invention, the gas ejection portion is characterized by comprising a storage portion in which the carbon-containing gas and the etching gas are accommodated, and a solenoid injection system for ejecting the carbon-containing gas and the etching gas.

In one embodiment of the invention, the gas ejector comprises a reservoir in which a carbon-containing gas and an etching gas are received, a heating portion for heating the carbon-containing gas and the etching gas to a predetermined temperature, And a piezo injecting system for injecting the fluid.

In one embodiment of the invention, the gas ejector comprises a reservoir in which a carbon-containing gas and an etching gas are received, a heating portion for heating the carbon-containing gas and the etching gas to a predetermined temperature, And a solenoid injection system for injecting the air into the combustion chamber.

In one embodiment of the present invention, the gas ejecting portion is provided in a form including a region corresponding to a region of the substrate having the metal layer.

In one embodiment of the present invention, the heating device is provided in a form including a region corresponding to a region of the substrate having the metal layer.

In one embodiment of the present invention, the heating device is provided in the same space as the gas ejecting portion.

In one embodiment of the present invention, the heating device may be provided with a halogen lamp, but is not limited to heating to a certain temperature.

In one embodiment of the present invention, an apparatus for forming an inductively coupled plasma is provided in a space such as a gas ejection portion.

In one embodiment of the present invention, a low temperature substrate growth graphene production apparatus comprises (1). Gas spouting part, (2). A substrate comprising a metal layer, (3). (Inductively Coupled Plasma) forming apparatus, (4). (1) to (4), which are constituted by a heating device and a heating device.

In one embodiment of the present invention, the exterior portion of the low temperature substrate growth graphene production apparatus is characterized by having an exhaust device.

In one embodiment of the present invention, the evacuation device can be used to easily evacuate gas remaining inside the exterior of the low temperature substrate growth graphene production apparatus to prevent incorporation of impurity gases in the manufacture of low temperature substrate growth graphene.

In one embodiment of the present invention, an exhaust device may be used to form a flow of carbon-containing gas and etch gas during the manufacture of the low temperature substrate growth graphene.

In one embodiment of the present invention, the outer periphery of the low temperature substrate growth graphene manufacturing apparatus is connected to a positioning process selected from a load-locked chamber positioning process and a roll-to-roll positioning process .

In one embodiment of the present invention, the exterior of the low temperature substrate growth graphene manufacturing apparatus is characterized by being connected to a method of localization selected from an atmospheric pressure wafer transfer system, a vacuum wafer transfer system.

In one embodiment of the present invention, the gas ejection unit comprises (1). Top and bottom, (2). Left and right, (3). (1), (2), (3), (3), and (3). In this case, the direction in which the substrate having the metal layer is inserted into the low temperature substrate growth graphene production apparatus and taken out is defined as the previous direction.

In one embodiment of the present invention, a low temperature substrate growth graphene manufacturing apparatus includes a substrate having a metal layer disposed therein. Top and bottom, (2). Left and right, (3). Back and forth, (4). (1), (2), (3), (4), and (4). In this case, the direction in which the substrate having the metal layer is inserted into the low temperature substrate growth graphene production apparatus and taken out is defined as the previous direction.

In one embodiment of the present invention, the gas ejecting portion ejects gas while moving in a moving direction selected from at least one of an upper, a lower, a left, a right, a front, and a back; .

In one embodiment of the present invention, the low temperature substrate growth graphene production apparatus includes a substrate having a metal layer disposed thereon, the substrate having at least one selected from top, bottom, left, right, front, back, To adjust the position to; .

In one embodiment of the present invention,

Providing a metal layer on a substrate; And

Supplying and discharging a carbon-containing gas and an etching gas; And

Performing inductively coupled plasma-chemical vapor deposition (ICP-CVD) at a temperature of 500 ° C or lower; And

The inductively coupled plasma-chemical vapor deposition (ICP-CVD) is continuously performed, and the metal of the metal layer is continuously removed by the etching gas, Growing graphene; To

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas and an etching gas; And

The inductively coupled plasma-chemical vapor deposition (ICP-CVD) is continuously performed, and the metal of the metal layer is continuously removed by the etching gas, Growing graphene; , &Lt; / RTI &

Wherein the steps are controlled by a controller of the low temperature substrate growth graphene production apparatus.

In one embodiment of the present invention, the controller of the low-temperature substrate growth graphene production apparatus may be provided in the form of a computer, but the present invention is not limited thereto.

In one embodiment of the present invention, the control device of the low-temperature substrate growth graphene production apparatus may be adopted as a basis for connection with the low temperature substrate growth graphene production apparatus by wire, but is not limited thereto, and may be wired and / .

In one embodiment of the present invention, the step of performing ICP-CVD at a temperature of 500 ° C or less may be performed by using a substrate having a metal layer (catalyst layer) And is carried out while moving.

In one embodiment of the invention, the low temperature substrate growth graphene production apparatus further comprises a cooling section for cooling the area of the low temperature substrate growth graphene.

In one embodiment of the present invention, the cooling section is characterized in that it is gradually cooled at a constant speed so that the graphene can uniformly grow and be uniformly arranged.

In one embodiment of the present invention, the cooling section is characterized in that after the ICP-CVD process, the cooling process is performed on the formed graphene.

In one embodiment of the present invention, the low temperature substrate growth graphene fabrication apparatus is characterized by being included in a process platform that facilitates the fabrication of a functional device that exhibits enhanced reliability with respect to semiconductor material based devices.

In one embodiment of the present invention, the low temperature substrate growth graphene production apparatus includes a process that facilitates the fabrication of a functional device that exhibits enhanced reliability with respect to semiconductor material based devices produced by "bottom-up & And is included in the platform.

In one embodiment of the invention, the control device of the low temperature substrate growth graphene production device may be included in the control device of the process platform which facilitates the production of a functional device showing enhanced reliability with respect to the semiconductor material based device . In one embodiment of the present invention, the above description may mean that the process manager is a system that performs overall equipment control of the process platform in one place.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas and an etching gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas, an etching gas and a hydrogen gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas, an etching gas and an inert gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas, an etching gas, a hydrogen gas and an inert gas.

In one embodiment of the present invention, the gas ejector may be provided with a carbon-containing gas and an etching gas, wherein the carbon-containing gas is heated to a predetermined temperature so that the activated carbon can be easily formed.

In an embodiment of the present invention, the gas ejecting portion may be characterized by heating and ejecting the carbon-containing gas and the etching gas to a predetermined temperature.

In one embodiment of the present invention, the gas ejection portion is connected to the gas supply portion by the gas connection pipe.

In one embodiment of the present invention, the gas supply regulator can easily control the amount of gas supplied from the gas supply to the gas spout.

In an embodiment of the present invention, the gas supply regulator may include a solenoid valve to easily control the amount of gas supplied to the gas ejector.

In one embodiment of the present invention, the proposed solenoid refers to an electronic solenoid.

In one embodiment of the present invention, the proposed solenoid refers to an electronically controlled solenoid.

In an embodiment of the present invention, the gas ejecting portion includes a nozzle module, and the nozzle module may be provided with a nozzle module having a solenoid.

In one embodiment of the invention, the gas ejector may comprise a solenoid ejection system. In one embodiment of the present invention, the solenoid injection system may be provided with a injection system having a solenoid. Alternatively, in an embodiment of the present invention, the solenoid injection system may be provided with a nozzle module having a solenoid.

In one embodiment of the present invention, the solenoid injection system is controlled by a controller of the substrate growth graphene production apparatus.

In one embodiment of the present invention, the solenoid injection system regulates the injection amount of the carbon-containing gas.

In one embodiment of the present invention, the solenoid injection system adjusts the injection amount of the etching gas.

In one embodiment of the invention, the solenoid injection system regulates the amount of carbon-containing gas injected and the amount of etch gas injected.

In one embodiment of the present invention, the arrangement of the solenoid injection system may basically adopt a grid-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the arrangement of the solenoid injection system may basically adopt a matrix-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the solenoid injection system senses a change in gas due to repetitive injection, and enables precise injection control in consideration of the difference. This precise injection control detects the change of the gas due to the repetitive injection of the solenoid injection system and determines the result of the analysis in the control apparatus of the low temperature substrate growth graphene manufacturing apparatus and determines the difference in the control apparatus of the low temperature substrate growth graphene manufacturing apparatus Can be regarded as performing precise injection control in consideration of the injection amount.

In one embodiment of the present invention, detecting a change in gas may mean detecting a change in pressure of the gas ejected to the pressure measurement sensor in real time and / or intermittently.

In one embodiment of the present invention, the gas ejector has a nozzle module, and the nozzle module may be provided with a nozzle module or piezo nozzle module having a piezo actuator (for example, a piezo electric actuator).

In one embodiment of the present invention, a piezoelectric actuator (e.g., a piezoelectrical actuator) includes a piezo ceramic layer and an electrode layer, wherein the piezo ceramic layer and the electrode layer are arranged such that one layer is on top of one layer, And are arranged in such a manner as to be aligned with each other.

In one embodiment of the present invention, the piezo actuator (e.g., piezo electric actuator) may be characterized as comprising a piezo crystal material, but is not limited in that it is a piezo material.

In one embodiment of the invention, the gas ejection portion may comprise a piezo injection system. In one embodiment of the invention, the piezo injection system may comprise a injection system with a piezo actuator (e.g. piezo electric actuator). Alternatively, in one embodiment of the present invention, the piezo injection system may be provided with a nozzle module or piezo nozzle module having a piezo actuator (e.g., piezo electric actuator).

In one embodiment of the present invention, since the piezo injection system can control the operation time to be not more than 100 microseconds in injection time, the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- .

In one embodiment of the present invention, since the piezo injection system can control the operation time to be not more than 100 microseconds, the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer useful.

In one embodiment of the present invention, since the piezo injection system can control the operation time to be not more than 100 microseconds in injection time, the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- , And is useful for making the concentration distribution in the direction parallel to the surface of the substrate uneven among the concentration distribution of the etching gas in the metal layer.

In one embodiment of the invention, the piezo injection system can precisely control the injection timing by reducing the time of injection compared to the conventional nozzle system, and significantly less noise and vibration than conventional nozzle systems.

In one embodiment of the present invention, the piezo injection system senses a change in gas due to repetitive injection and enables precise injection control taking into account the difference. This precise injection control detects the change of the gas due to the repetitive injection of the piezo injection system and makes a determination after analysis in the control apparatus of the low temperature substrate growth graphene manufacturing apparatus and the difference in the control apparatus of the low temperature substrate growth graphene manufacturing apparatus Can be regarded as performing precise injection control in consideration of the injection amount.

In one embodiment of the invention, the piezo injection system has the following sequence of operations. (One). Electric charging (or application of voltage), (2). Piezo actuator operation, (3). Hydraulic coupler hydraulic pressure increase, (4). Pressure control valve open, (5). Needle opening, (6). (1) to (6), which consist of gas injection, and gas injection.

In one embodiment of the invention, the piezo injection system has the following sequence of operations. (One). Electric discharge (or interruption of voltage), (2). Piezo actuator stop, (3). Hydraulic coupler hydraulic pressure reduction, (4). Pressure control valve closed, (5). Needle closure, (6). (1) to (6) in which the gas injection is stopped.

In one embodiment of the present invention, the arrangement of the piezo injection system can basically adopt a grid-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the arrangement of the piezo injection system can basically adopt a matrix-like arrangement, but is not limited thereto.

In one embodiment of the invention, the piezo injection system is controlled by a controller of the substrate growth graphene production apparatus.

In one embodiment of the invention, the piezo injection system regulates the amount of carbon-containing gas injected.

In one embodiment of the present invention, the piezo injection system adjusts the injection amount of the etching gas.

In one embodiment of the invention, the piezo injection system adjusts the injection amount of the carbon-containing gas and the injection amount of the etching gas.

In one embodiment of the present invention, the low temperature substrate growth graphene production apparatus may further comprise various detection devices. Such an example may include an apparatus for detecting and / or discriminating the state of a substrate provided with a low-temperature substrate growth graphene provided with a photo-detecting apparatus.

In one embodiment of the present invention, the low temperature substrate growth graphene production apparatus may additionally include a plurality of devices, but basically, an etching gas and a carbon-containing gas are supplied and inductively coupled plasma chemical vapor deposition And removing the metal layer with the etching gas while maintaining the ICP-CVD process, thereby growing the graphene on the substrate without the metal layer.

''

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas and an etching gas;

An inductively coupled plasma (hereinafter referred to as " inductively coupled plasma ") forming apparatus that forms plasma in a chamber by an induction field formed by applying a high frequency power; To

And a low-temperature substrate growth graphene production apparatus.

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas and an etching gas;

And a low-temperature substrate growth graphene production apparatus.

In one embodiment of the present invention,

Further comprising a gas supply regulator connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout; And a low-temperature substrate growth graphene production apparatus.

In one embodiment of the invention, the gas supply regulator may be characterized as comprising a solenoid valve.

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A nozzle portion for ejecting a carbon-containing gas and an etching gas; .

In one embodiment of the present invention,

A piezo-jet system for ejecting carbon-containing gas and etch gas; .

In one embodiment of the present invention,

A solenoid injection system for ejecting carbon-containing gas and etching gas; .

In one embodiment of the present invention,

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

A piezo-jet system for ejecting carbon-containing gas and etch gas; .

In one embodiment of the present invention,

In one embodiment of the present invention, the heating unit provided in the gas ejection unit may be characterized in that the carbon-containing gas is heated to a predetermined temperature so that the activated carbon can be easily formed.

In one embodiment of the present invention, the heating portion provided in the gas ejecting portion may be characterized by heating the carbon-containing gas and the etching gas to a predetermined temperature.

In one embodiment of the present invention,

And a region corresponding to a region of the substrate having the metal layer; .

In one embodiment of the present invention,

In one embodiment of the present invention, an apparatus for forming an inductively coupled plasma (hereinafter referred to as " inductively coupled plasma ") is provided in a space such as a gas ejector; .

In one embodiment of the present invention, the gas ejection portion ejects gas while moving; .

In one embodiment of the present invention,

Adjusting the position of the substrate comprising the metal layer; And a low-temperature substrate growth graphene production apparatus.

In one embodiment of the present invention,

Further comprising a cooling unit for slowly cooling the substrate at a constant speed so that the low-temperature substrate growth grains can uniformly grow and be uniformly arranged; And a low-temperature substrate growth graphene production apparatus.

In one embodiment of the present invention, the present invention comprises a low temperature substrate growth graphene manufacturing apparatus; And a process platform.

In one embodiment of the present invention,

Including solenoid injection systems; And a gas discharge portion.

In one embodiment of the present invention,

The solenoid injection system

The concentration distribution of the carbon-containing gas in the metal layer in the direction parallel to the surface of the substrate is uneven; .

In one embodiment of the present invention,

The solenoid injection system

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

The solenoid injection system

Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,

In one embodiment of the present invention,

The solenoid injection system being controlled by a controller of the substrate growth graphene production apparatus; .

In one embodiment of the present invention,

Comprising a piezo injection system with a piezo electric actuator; And a gas discharge portion.

In one embodiment of the present invention,

Piezoelectric actuators

A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; .

In one embodiment of the present invention,

The piezo injection system being controlled by a controller of the low temperature substrate growth graphene production apparatus; .

In one embodiment of the present invention,

The piezo injection system

In one embodiment of the present invention,

The piezo injection system

In one embodiment of the present invention,

The piezo injection system

In one embodiment of the present invention,

A gas ejection portion, and

A substrate having a metal layer, and

Heating device, and

Having a low temperature substrate growth graphene manufacturing device outer periphery to accommodate an inductively coupled plasma ("inductively coupled") forming device; And a low-temperature substrate growth graphene production apparatus.

In one embodiment of the present invention,

The low temperature substrate growing graphene manufacturing apparatus comprising an exhaust unit having an exhaust device; .

In one embodiment of the present invention,

Low Temperature Substrate Growth

Linked to a method of positioning selected from a load-locked chamber positioning process, a roll-to-roll positioning process, or the like; .

In one embodiment of the present invention,

Low Temperature Substrate Growth

Connected to atmospheric pressure wafer transfer system, vacuum wafer transfer system, selected locating process method; .

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas and an etching gas; And

The steps being controlled by a controller of the low temperature substrate growth graphene production apparatus; The method comprising the steps of:

In one embodiment of the present invention,

A solenoid injection system for ejecting carbon-containing gas and etching gas; And a gas discharge portion.

In one embodiment of the invention, the solenoid injection system

''

Here, "to be described" means "to be enumerated or described and described as it is with the contents and features of the object or process".

The present invention has been described as an upper group, a group, a range of a group, a lower range of a group, and an inclusion range of a group.

Advantages and features of the present invention and methods for accomplishing the same will become apparent with reference to the embodiments described in detail in the foregoing. However, the present invention is not limited to the embodiments described in detail, but may be embodied in various forms.

Rather than being specifically described herein, generally known methods, generally known devices, generally known materials, and generally known techniques may be applied to embodiments of the present invention that are widely apparent without resort to unnecessary experimentation. The methods, apparatuses, materials, sequences, and particularly techniques known in the art, as described herein, can be applied to embodiments of the present invention without intending to be so.

It will be understood by those skilled in the art that the present invention may be practiced without recourse to any undue explanation.

The terms and expressions which have been employed herein are used as terms of the detailed description of the invention but are not intended to be limiting and are not intended to limit the terms or expressions of the described or illustrated features. However, various modifications are possible within the scope of the present invention. It is therefore to be understood that, although the present invention has been described by means of some preferred embodiments, it is to be understood that the exemplary embodiments and optional features, modifications and variations of the concepts described herein can be reclassified by conventional techniques and the like, May be considered within the scope of the invention as defined by the appended claims.

It is apparent that the specific embodiments provided herein are illustrative of useful embodiments of the present invention and that the present invention may be practiced using many variations of the devices, components, and method steps.

Useful embodiments of the invention presented herein may include various optional configurations and methods and steps.

Here, when a higher group is described, individual members that can be included in the higher group and combinations of lower groups that can be included in the higher group are feasible within the described range of the higher group. Thus, when a parent group is described herein, it should be understood that it includes the possible subgroup combinations and individual members of the group. Also, when a parent group is described, it should be understood that the individual members that can be included in the parent group and the combination of the child groups that can be included in the parent group are included in the described range of the parent group.

Additionally, where no other description is required, it will be understood that, in one embodiment of the present invention, a variant of the presented material is included in the applicant's variant without intending to be bound by the important combination claimed herein.

In an embodiment of the invention, what has been described in the singular can mean plural.

In one embodiment of the present invention, when a manufacturing process is presented, the manufacturing process may refer to a manufacturing process that is performed more than once.

The specific names of the materials or components of the components described or illustrated herein are to be construed as merely exemplary insofar as those of ordinary skill in the art to which the invention pertain may denote specific names of materials or components of the same component Can be called. Accordingly, the specific names of the materials or components of the components described or illustrated herein should be understood based on the overall description of the invention as set forth.

Combinations of groups described or described herein may be used to practice the invention, although not otherwise mentioned.

Combinations of groups described or described herein that may be included within an upper group may be used to practice the invention, if not otherwise stated.

The individual values that may be included in the ranges of the groups described or described above as well as when the ranges of the groups described or described herein are given are intended to be included within the scope of the above described or described group.

Combinations of groups that may be included in the ranges of the groups described or described above as well as when the ranges of the groups described or illustrated herein are given are intended to be included within the scope of the groups described or illustrated above.

In one embodiment of the present invention, equivalently known components or synthetic combinations or compounds of the components described or illustrated can be used to practice the invention without intending to be mentioned otherwise.

It will be appreciated that the scope of the description of the groups described herein may not appear in the claims herein.

It will be understood that the groups described herein may not appear in the claimed claims herein.

In one embodiment of the present invention, the contents of the present invention have been described at the level of those skilled in the art.

In one embodiment of the present invention, the present invention, which is described in terms of groups, ranges of groups, sub-ranges of groups, and ranges of groups, can be realized within the scope of the description of a possible higher group of the present invention.

Those skilled in the art will appreciate that the various ways of practicing the invention may be employed in the practice of the invention without undue experimentation.

In addition, those skilled in the art will recognize that the description set forth in the present invention in the context of a group, a group of sub-ranges, a group of sub-ranges and a group, You can see that it is.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

In addition, the present invention, which is suitably and schematically illustrated, may be realized without the need for any elements or components, or without limitation or limitation, which are not described in detail.

It is also to be understood that the present invention which is properly illustrated schematically is merely illustrative and that those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention . Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

In one embodiment of the present invention, any materials and methods known equivalently to the materials and methods described in the present invention may be included in an embodiment of the invention inadvertently.

100: substrate
200: metal layer
300: Carbon-containing gas
310: Etching gas of metal
500: Grain Pins
1001: Graphene device
1002: Graphene
1003: substrate
1004: grain boundary
1500: Grain growth direction
1600: Etching gas introduction direction
2000: Line graphene
2001: Surface graphene
3001: Slit mask
3002: slit
3005: metal direction supplied by sputtering
5000A, 5000B, 5100A: low-temperature substrate growth graphene production equipment
5010, 5110: Low Temperature Substrate Growth Graphene Manufacturing Apparatus
5020, 5120: gas supply part
5021, 5022, 5023, 5121, 5122, 5123: gas supply device
5030, 5131, 5132: gas supply regulator
5041, 5042, 5141, 5142, 5143, 5144:
5051, 5052, 5151, 5152: Inductively Coupled Plasma
5060, 5160: substrate on which a catalyst layer is formed
5070, 5170: Low temperature substrate growth graphene
5080, 5180: Exhaust system
5090, 5190: Control device of low-temperature substrate growth graphene production equipment
5095, 5195, 5196: Heating device
5098, 5099: Rollers
5197: wafer (substrate) vacuum transfer system
6100A, 6100B, 6200A, 6200B: piezo injection system
6110, 6210: Piezoelectric actuator module
6120, 6220: accumulator
6130: Needle operation amplifier
6140: Needle
6250: Coupling module
6260: Control Valve Module
6270: Nozzle module

Claims

a. Providing a metal layer on the substrate Thereafter,
b. A carbon-containing gas and an etching gas are supplied at a temperature of 500 ° C or lower and inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed,
c. Supplying an etchant gas of a metal together in the carbon-containing gas supply, growing graphene on the metal layer,
d. In step c), continuous inductively coupled plasma-chemical vapor deposition (ICP-CVD) is performed, wherein the metal of the metal layer is continuously removed by the etching gas, Growing the graphene on the substrate in a state where the graphene is not formed; of
Method for manufacturing low-temperature substrate growth graphene

The method according to claim 1,
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the metal layer is made non-uniform,
Controlling the starting point and direction of growth of graphene to realize a large crystal of graphene; of
Method for manufacturing low-temperature substrate growth graphene

The method according to claim 1,
The etching gas supply
The concentration distribution of the etching gas in the metal layer is made non-uniform,
Controlling the starting point and direction of growth of graphene to realize a large crystal of graphene; of
Method for manufacturing low-temperature substrate growth graphene

The method according to claim 1,
Wherein the metal layer has a slope in the thickness of the metal layer,
The etching gas is supplied in such a manner that the metal is rapidly removed by raising the concentration of the etching gas at a high portion of the metal layer and the concentration of the etching gas is low at the low portion of the metal layer,
The lower part of the metal layer becomes the starting position of the growth of graphene; of
Method for manufacturing low-temperature substrate growth graphene

The method of claim 4,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing low-temperature substrate graphene by feature

The method according to claim 1,
Wherein the metal layer has a slope in the thickness of the metal layer,
The carbon-containing gas supply is configured such that the concentration of the carbon-containing gas is high at the upper portion of the metal layer, the concentration of the carbon-containing gas at the lower portion of the metal layer is high,
The etching gas is supplied in such a manner that the metal is rapidly removed by raising the concentration of the etching gas at a high portion of the metal layer and the concentration of the etching gas is low at the low portion of the metal layer,
The lower part of the metal layer becomes the starting position of the growth of graphene; of
Method for manufacturing low-temperature substrate growth graphene

The method of claim 6,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing low-temperature substrate graphene by feature

The method according to claim 1,
Wherein the carbon-containing gas supply causes grains to grow in a direction parallel to the surface of the substrate as the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- that; of
Method for manufacturing low-temperature substrate growth graphene

The method according to claim 1,
Wherein the etching gas supply is performed by growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer is made non-uniform; of
Method for manufacturing low-temperature substrate growth graphene

The method according to claim 1,
Wherein the carbon-containing gas supply causes a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer to be uneven,
The etching gas supply causes a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer to be uneven,
Growing graphene in a direction parallel to the surface of the substrate; of
Method for manufacturing low-temperature substrate growth graphene

The method according to claim 1,
The metal of the metal layer is iron, nickel, cobalt, or an alloy containing them,
The etching gas is chlorine; of
Method for manufacturing low-temperature substrate growth graphene

a. Loading the substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into an ICP-CVD chamber, supplying the carbon-containing gas and etch gas and forming a low temperature substrate growth graphene by ICP-CVD; , &Lt; / RTI &
c. Wherein the substrate is sequentially loaded into the deposition chamber and the ICP-CVD chamber using a load-locked chamber; of
Method for manufacturing low-temperature substrate growth graphene

a. Loading the substrate into a deposition chamber to form a metal layer on the substrate; And
b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And
c. Loading the substrate into an ICP-CVD chamber, supplying the carbon-containing gas and etch gas and forming a low temperature substrate growth graphene by ICP-CVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing low-temperature substrate growth graphene

a. Loading the substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And
c. Loading the substrate into an ICP-CVD chamber, supplying the carbon-containing gas and etch gas and forming a low temperature substrate growth graphene by ICP-CVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing low-temperature substrate growth graphene

a. Loading the substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And
c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And
d. Loading the substrate into an ICP-CVD chamber, supplying the carbon-containing gas and etch gas and forming a low temperature substrate growth graphene by ICP-CVD; , &Lt; / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing low-temperature substrate growth graphene

The method according to claim 1,
Further comprising cooling the grown graphene on the substrate; of
Method for manufacturing low-temperature substrate growth graphene

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Constituting a concentration distribution of the carbon-containing gas in the metal layer uniformly, and
c. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;
d. Performing ICP-CVD, and
e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And
f. Etching is continued while ICP-CVD is maintained to grow carbon so as to form a crystal structure with already-grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method for producing low-temperature substrate growth graphene

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and
c. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;
d. Performing ICP-CVD, and
e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And
f. Etching is continued while ICP-CVD is maintained to grow carbon so as to form a crystal structure with already-grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method for producing low-temperature substrate growth graphene

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and
c. So that the etching gas is uniformly injected to uniformly remove the metal layer, and
d. Performing ICP-CVD, and
e. With the removal of the metal, the carbon that can not grow on the metal to be removed remains in high mobility, where the concentration of the carbon-containing gas is high, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And
f. Etching is continued while ICP-CVD is maintained to grow carbon so as to form a crystal structure with already-grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method for producing low-temperature substrate growth graphene

The method according to any one of claims 17 to 19,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing low-temperature substrate graphene by feature

Wherein the linear graphene growing in a first direction parallel to the surface of the substrate and in direct contact with the surface is produced by the method of manufacturing the low temperature substrate growth grains described in claim 8,
Producing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method of manufacturing the low temperature substrate growth grains described in claim 8; of
Method for manufacturing low-temperature substrate growth graphene

Wherein the linear graphene is grown in a first direction parallel to the surface of the substrate and is in direct contact with the surface thereof is produced by the method of manufacturing the low temperature substrate growth graphene described in claim 9,
Producing plane graphenes growing in a second direction parallel to the surface from the linear graphenes and directly contacting the surfaces by the method of manufacturing the low temperature substrate growth grains described in claim 9; of
Method for manufacturing low-temperature substrate growth graphene

Wherein the linear graphenes grow in a first direction parallel to the surface of the substrate and are in direct contact with the surfaces thereof are produced by the method of manufacturing the low temperature substrate growth grains described in claim 10,
Producing surface graphenes growing in a second direction parallel to the surface from the line graphene and in direct contact with the surface by the method of manufacturing the low temperature substrate growth graphene according to claim 10; of
Method for manufacturing low-temperature substrate growth graphene

The method according to any one of claims 21 to 23,
Cooling the line graphene, and
Further comprising cooling said planar graphene; of
Method for manufacturing low-temperature substrate growth graphene

With low temperature substrate growth graphene,
Wherein the low temperature substrate growth graphene directly contacts the surface of the substrate,
The crystal grain size in the first direction parallel to the surface of the low temperature substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the low temperature substrate growth graphene,
The crystal grain size in the first direction of the low temperature substrate growth grains is larger than that in a direction perpendicular to the surface of the graphene; of
Feature low-temperature substrate growth graphene

With low temperature substrate growth graphene,
The low temperature substrate growth graphene directly contacts the surface of the substrate,
The low temperature substrate growth grains having a grain boundary along a first direction parallel to the surface,
The low temperature substrate growth grains having a grain boundary along a second direction parallel to the surface,
The low-temperature substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; of
Feature low-temperature substrate growth graphene

26. The method of claim 26,
The first direction and the second direction being orthogonal; of
Feature low-temperature substrate growth graphene

With low temperature substrate growth graphene,
The low temperature substrate growth graphene directly contacts the surface of the substrate,
The low-temperature substrate growth graphene has a plurality of crystal grain boundaries in a first direction parallel to the surface,
Wherein the low temperature substrate growth grains have a plurality of crystal grain boundaries in a second direction parallel to the surface,
The low-temperature substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; of
Feature low-temperature substrate growth graphene

29. The method of claim 28,
Wherein the first direction and the second direction are orthogonal to each other,
The interval of the grain boundaries along the first direction is constant,
The intervals of the grain boundaries along the second direction are constant; of
Feature low-temperature substrate growth graphene

A method of manufacturing an electronic component, characterized by comprising a method of manufacturing a low temperature substrate growth graphene according to claim 1, claim 17, claim 18, claim 19, claim 21, claim 22 or claim 23

A method of manufacturing an electronic component characterized by comprising a method of manufacturing a low temperature substrate growth graphene according to claim 1, claim 17, claim 18, claim 19, claim 21, claim 22 or claim 23 And an electronic component

Characterized in that it comprises a low temperature substrate growth graphene according to claim 25, claim 26 or claim 28

A gas supply unit for supplying a carbon-containing gas and an etching gas;
A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;
A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And
A heating device arranged to heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; And
An inductively coupled plasma (hereinafter referred to as " inductively coupled plasma ") forming apparatus that forms plasma in a chamber by an induction field formed by applying a high frequency power; To
A low temperature substrate growth graphene manufacturing apparatus

A gas supply unit for supplying a carbon-containing gas and an etching gas;
A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;
A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And
A heating device arranged to heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; And
An inductively coupled plasma (hereinafter referred to as " inductively coupled plasma ") forming apparatus that forms a plasma by an induction magnetic field formed by applying a high frequency power; To
A low temperature substrate growth graphene manufacturing apparatus

37. The method of any one of claims 33-34,
Further comprising a gas supply regulator connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout; of
Low-temperature substrate growth graphene manufacturing system

37. The method of any one of claims 33-34,
The gas-
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A nozzle portion for ejecting a carbon-containing gas and an etching gas; of
Low-temperature substrate growth graphene manufacturing system

37. The method of any one of claims 33-34,
The gas-
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A piezo-jet system for ejecting carbon-containing gas and etch gas; of
Low-temperature substrate growth graphene manufacturing system

37. The method of any one of claims 33-34,
The gas-
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and
A piezo-jet system for ejecting carbon-containing gas and etch gas; of
Low-temperature substrate growth graphene manufacturing system

37. The method of any one of claims 33-34,
The gas-
And a region corresponding to a region of the substrate having the metal layer; of
Low-temperature substrate growth graphene manufacturing system

37. The method of any one of claims 33-34,
The heating device
And a region corresponding to a region of the substrate having the metal layer; of
Low-temperature substrate growth graphene manufacturing system

37. The method of any one of claims 33-34,
The apparatus for forming an inductively coupled plasma (Inductively Coupled Plasma)
Provided in the same space as the gas ejection portion; of
Low-temperature substrate growth graphene manufacturing system

37. The method of any one of claims 33-34,
The gas-
Jetting gas while moving; of
Low-temperature substrate growth graphene manufacturing system

37. The method of any one of claims 33-34,
Adjusting the position of the substrate comprising the metal layer; of
Low-temperature substrate growth graphene manufacturing system

37. The method of any one of claims 33-34,
Further comprising a cooling unit for slowly cooling the substrate at a constant speed so that the low-temperature substrate growth grains can uniformly grow and be uniformly arranged; of
Low-temperature substrate growth graphene manufacturing system

Comprising a low temperature substrate growth graphene production apparatus according to any one of claims 33 to 34; of
Characterized process platform

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and
Comprising a piezo injection system with a piezo electric actuator; of
The gas-

47. The method of claim 46,
The piezo electric actuator
A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; of
The gas-

47. The method of claim 46,
The piezo injection system
Controlled by a controller of the low temperature substrate growth graphene production apparatus; of
The gas-

47. The method of claim 46,
The piezo injection system
The concentration distribution of the carbon-containing gas in the metal layer in the direction parallel to the surface of the substrate is uneven; of
The gas-

47. The method of claim 46,
The piezo injection system
The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; of
The gas-

47. The method of claim 46,
The piezo injection system
Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,
The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; of
The gas-

A gas ejection portion, and
A substrate having a metal layer, and
Heating device, and
Having a low temperature substrate growth graphene manufacturing device outer periphery to accommodate an inductively coupled plasma ("inductively coupled") forming device; of
Low-temperature substrate growth graphene manufacturing system

53. The method of claim 52,
Wherein the outer surface of the low temperature substrate growth graphene manufacturing apparatus has an exhaust device; of
Low-temperature substrate growth graphene manufacturing system

53. The method of claim 52,
The low temperature substrate growth graphene manufacturing apparatus
Linked to a method of positioning selected from a load-locked chamber positioning process, a roll-to-roll positioning process, or the like; of
Low-temperature substrate growth graphene manufacturing system

53. The method of claim 52,
The low temperature substrate growth graphene manufacturing apparatus
Connected to atmospheric pressure wafer transfer system, vacuum wafer transfer system, selected locating process method; of
Low-temperature substrate growth graphene manufacturing system

Supplying and discharging a carbon-containing gas and an etching gas; And
Performing inductively coupled plasma-chemical vapor deposition (ICP-CVD) at a temperature of 500 ° C or lower; And
The inductively coupled plasma-chemical vapor deposition (ICP-CVD) is continuously performed, and the metal of the metal layer is continuously removed by the etching gas, Growing graphene; , &Lt; / RTI &
The steps being controlled by a controller of the low temperature substrate growth graphene production apparatus; of
Method for manufacturing low-temperature substrate growth graphene

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and
A solenoid injection system for ejecting carbon-containing gas and etching gas; of
The gas-

65. The method of claim 57,
The solenoid injection system
Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,
The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; of
The gas-