KR20160002262U - Manufacturing method of substrate graphene growth and substrate graphene growth and manufacturing device - Google Patents

Abstract

In the present invention,
a. Providing a metal layer on the substrate Thereafter,
b. An etching gas and a carbon-containing gas are supplied and atmospheric pressure chemical vapor deposition (APCVD) is performed,
c. Supplying a carbon-containing gas in the etching gas supply, growing graphene on the metal layer,
d. In the step c), continuous atmospheric pressure chemical vapor deposition (APCVD) is performed, and the metal of the metal layer is entirely and continuously removed by the etching gas, Growing graphene; The method comprising the steps of:
In addition,
With substrate growth graphene,
Wherein the substrate growth graphene directly contacts the surface of the substrate,
The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,
The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; Lt; RTI ID = 0.0 > graphenes < / RTI >
In addition,
With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,
Wherein the substrate growth graphene has a grain boundary along a second direction parallel to the surface,
The substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; Lt; RTI ID = 0.0 > graphenes < / RTI >
In addition,
With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,
Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a second direction parallel to the surface,
The substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; Lt; RTI ID = 0.0 > graphenes < / RTI >
In addition,
A gas supply unit for supplying a carbon-containing gas and an etching gas;
A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;
A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And
A heating device arranged to heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; To
The present invention also provides a substrate growing graphene manufacturing apparatus, comprising:

Description

Technical Field The present invention relates to a method for manufacturing a substrate graphene and a method for manufacturing the same,

The present invention relates to a method of manufacturing a substrate growth graphene, a substrate growth graphene, and an electronic component including the same.

The present invention also relates to a substrate growth graphene manufacturing apparatus.

Graphene is a hexagonal material consisting of a single layer of carbon atoms, which transports electrons 100 times faster than silicon.

In addition, a method of growing graphene is mainly performed by introducing a gaseous carbon source to form activated carbon, and then growing graphene on the catalyst layer due to the activated carbon.

Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.

Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.

In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.

Therefore, there is a need for a technique for manufacturing graphene that directly contacts the surface of a substrate without leaving a catalyst metal on the substrate.

The present invention has been made to solve the above problems, and it is an object of the present invention to provide a method of manufacturing a substrate growth graphene, a substrate growth graphene, and an electronic part including the same.

The present invention also aims at providing a substrate growing graphene producing apparatus which solves the above problems.

Therefore, in order to solve the above-described problem, the present invention requires a technique for manufacturing graphene that directly contacts the surface of a substrate without leaving a catalyst metal on the substrate. Further, a technique for manufacturing a graphene of a single crystal as large as possible was required. For that reason,

a. Providing a metal layer on the substrate Thereafter,

b. An etching gas and a carbon-containing gas are supplied and atmospheric pressure chemical vapor deposition (APCVD) is performed,

c. Supplying a carbon-containing gas in the etching gas supply, growing graphene on the metal layer,

d. In the step c), continuous atmospheric pressure chemical vapor deposition (APCVD) is performed, and the metal of the metal layer is entirely and continuously removed by the etching gas, Growing graphene; And a method for manufacturing a substrate growth graphene.

The present invention also proposes a method for manufacturing a substrate grown graphene.

In addition,

With substrate growth graphene,

Wherein the substrate growth graphene directly contacts the surface of the substrate,

The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,

The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; Lt; RTI ID = 0.0 > graphenes < / RTI >

In addition,

With substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,

Wherein the substrate growth graphene has a grain boundary along a second direction parallel to the surface,

The substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; Lt; RTI ID = 0.0 > graphenes < / RTI >

In addition,

With substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,

Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a second direction parallel to the surface,

The substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; Lt; RTI ID = 0.0 > graphenes < / RTI >

In addition,

A gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; To

The present invention also provides a substrate growing graphene manufacturing apparatus,

The present invention provides a method for manufacturing a substrate growth graphene in which graphenes are grown on a substrate.

The present invention also provides substrate growth graphenes.

The present invention also provides a method for manufacturing a substrate growth graphene, a substrate growth graphene, and an electronic part including the same.

The present invention further provides a substrate growing graphene manufacturing apparatus.

1
1,
(One). Substrate,
(2). Providing a metal layer on the substrate Thereafter,
(3). An etching gas and a carbon-containing gas are supplied and atmospheric pressure chemical vapor deposition (APCVD) is performed,
(4). Supplying a carbon-containing gas in the etching gas supply, growing graphene on the metal layer,
(5). In the step (4), atmospheric pressure chemical vapor deposition (APCVD) is continuously performed, and the metal of the metal layer is continuously removed entirely due to the etching gas, Growing graphene on the substrate,
(1) to (5), wherein the method for producing the substrate grafting grains is carried out in the following manner.
2A,
1 is a plan view showing a first example of a substrate growth graphene provided in a method of manufacturing a substrate growth graphene according to an embodiment of the present invention;
2B
Sectional view showing a first example of a substrate growth graphene provided in a method of manufacturing a substrate growth graphene according to an embodiment of the present invention.
3
1 is a plan view showing a second example of a substrate growth graphene provided in a method of manufacturing a substrate growth graphene according to an embodiment of the present invention;
4
In one embodiment of the present invention, it is a plan view for explaining at least one linear graphene provided in a method of manufacturing a substrate growth graphene to be presented and a growth direction thereof.
5
In one embodiment of the present invention, it is a plan view for explaining at least one plane-shaped graphene provided by a method for producing a substrate growth graphene to be presented and a growth direction thereof.
6A
The description of FIG. 6A is described by (1) or (2) described below.
(One). If the concentration distribution of the carbon-containing gas in the metal layer is nonuniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, the position where the crystal of graphene starts to grow and the direction of growth can be controlled.
Here, the carbon-containing gas may be selected from a compound containing carbon or a gas capable of forming activated carbon while the concentration distribution of hydrogen gas is kept constant.
Alternatively, in one embodiment of the present invention, the carbon-containing gas may be formed in a state where the flow of hydrogen is kept constant (e.g., several sccm) It can only mean to be selected from among the gases available.
Alternatively, in one embodiment of the present invention, the carbon-containing gas may collectively mean a hydrogen gas and a gas capable of forming an inert gas and activated carbon.
(2). The carbon-containing gas supply may include growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer is uneven; A method for producing a substrate growth graphene
6B
The description of FIG. 6B is explained with (1) or (2) described below.
(One). With a rapid removal of the metal, the carbon that can not grow on the rapidly removed metal can grow into graphene on the metal layer where the concentration of the etching gas is low, while maintaining high mobility. In one embodiment of the present invention, the nucleation of a new graphene can be inhibited because carbon with high mobility is transferred to the graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.
Therefore, even when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the growth of the graphen starts from a place where the concentration of the etching gas is low, and grows toward the place where the concentration of the etching gas is high.
(2). Supplying the etching gas includes growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer becomes uneven; A method for producing a substrate growth graphene
6C
The description of FIG. 6C is explained with (1) or (2) described below.
(One). The method of manufacturing the substrate growth graphenes to be described in this figure can be described as follows.
a. The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.
b. The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.
c. In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.
d. APCVD is performed.
e. Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.
f. If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.
g. Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. In this case, graphenes directly contacting the surface of the substrate can realize a large crystal.
(2). The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the carbon-containing gas in the metal layer,
The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the etching gas in the metal layer,
Growing graphene in a direction parallel to the surface of the substrate; A method for producing a substrate growth graphene
7
The description of FIG. 7 is as follows.
(One). A substrate is prepared. Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.
(2). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is supplied from the top to the bottom, the shape of the metal layer is symmetrical
8
The description of FIG. 8 is as follows.
The metal layer 200 is provided on the substrate provided with the bend. The metal layer 200 may be formed into two small and large rectangular patterns. The two large and small square patterns can have a shape in which a first area made up of a very small square is connected to a vertex at the lower left of a second area made up of a large square (for example, a first area made up of a very small square May refer to a shape in which the center point of the second square is connected to the lower left vertex of the second square area. The thickness of the metal layer 200 is inclined such that the first region is thinner than the second region and thicker from the lower left vertex to the other three vertices in the second region.
In the figure, the metal layer 200 is shown by a shade, and the metal layer 200 is thicker as the shade is thicker as the metal layer 200 is thin and the shade is faint.
9
FIG. 9 is a perspective view showing a first example of a substrate growth graphene production apparatus shown schematically in an embodiment of the present invention. FIG.
10A
FIG. 10A is a first perspective view showing a second example of a substrate growth graphene production apparatus shown in a schematic form in an embodiment of the present invention. FIG.
10B
FIG. 10B is a second perspective view showing a second example of the substrate growth graphene producing apparatus proposed in the present embodiment in a schematic manner. FIG.
10C
FIG. 10C is a detailed view of a second perspective view showing a second example of a substrate growth graphene production apparatus shown in a schematic form in an embodiment of the present invention; FIG.
10d
Fig. 10D is a first perspective view showing a third example of the substrate growth graphene producing apparatus proposed in the embodiment of the present invention, schematically showing the third example. Fig.
10E
FIG. 10E is a first perspective view showing a fourth example of the substrate growth graphene production apparatus shown in the outline in a schematic embodiment of the present invention; FIG.
11A
11A is a cross-sectional view showing a first example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
11B
11B is a cross-sectional view showing a second example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
12A
12A is a cross-sectional view showing a third example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
12B
FIG. 12B is a cross-sectional view showing a fourth example schematically showing the proposed piezo injection system in one embodiment of the present invention. FIG.
13A
FIG. 13A is a cross-sectional view showing a first example of a schematic representation of a proposed solenoid injection system in one embodiment of the present invention; FIG.
13B
13B is a cross-sectional view showing a second example of the solenoid injection system shown schematically in an embodiment of the present invention.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

Substrate growth method of graphene and substrate growth graphene

Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.

Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.

In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.

Therefore, there is a need for a technique for manufacturing graphene that directly contacts the surface of a substrate without leaving a catalyst metal on the substrate.

Thus, in one embodiment of the present invention, the method of manufacturing a substrate growth graphene,

(One). (Or deposition) of a metal layer on a substrate,

(2). An etching gas and a carbon-containing gas are supplied and atmospheric pressure chemical vapor deposition (APCVD) is performed,

(3). Supplying a carbon-containing gas in the etching gas supply, growing graphene on the metal layer,

(4). In the step (3), atmospheric pressure chemical vapor deposition (APCVD) is continuously performed, but the metal of the metal layer is continuously removed by etching gas (or by continuously supplying an etching gas) And a method of manufacturing a substrate growth graphene in which graphenes are directly in contact with a substrate.

In other words, there is provided a removal process for removing the metal layer with an etching gas while supplying an etching gas and a carbon-containing gas and maintaining atmospheric pressure chemical vapor deposition (APCVD). Growing pins; The method comprising the steps of:

Here, performing Atmospheric Pressure Chemical Vapor Deposition (APCVD) may include a step of raising the temperature (for example, up to 1000 캜) before supplying the etching gas and the carbon-containing gas, It is to be understood that the present invention is not limited to the above-described embodiments, but may be understood by those skilled in the art. Also, in one embodiment of the present invention, performing atmospheric pressure chemical vapor deposition (APCVD) may be performed in a state where the flow of hydrogen is kept constant (for example, several sccm) That is,

&Quot; Atmospheric Pressure Chemical Vapor Deposition (APCVD) "proposed in the present invention can be expressed as" APCVD ". The APCVD process proposed in the present invention refers to an APCVD process as a method for manufacturing substrate growth grains, which is referred to as a new technique in the present invention, in which an etching process of a metal layer is included in an APCVD process to directly grow graphene on a substrate.

The "carbon-containing gas" proposed in the present invention is a gas containing a carbon-containing compound or activated carbon formed in a state where the concentration distribution of the hydrogen gas is kept constant, that is, And the gas that can be supplied. Incidentally, the term "carbon-containing gas" may mean only those selected from a compound containing carbon or a gas capable of forming activated carbon.

In one embodiment of the present invention, the "carbon-containing gas" presented in the present invention is a gas having a constant concentration of hydrogen gas, i.e., A compound containing carbon or a gas capable of forming activated carbon, provided in several sccm. Incidentally, the term "carbon-containing gas" may mean only those selected from a compound containing carbon or a gas capable of forming activated carbon.

In one embodiment of the present invention, the "carbon-containing gas" as presented in the present specification may mean that it is described as an integrated gas that also includes a compound containing carbon and hydrogen gas.

In one embodiment of the present invention, the "carbon-containing gas" presented in this specification may mean that it is described as a compound gas containing carbon and an integrated gas containing both hydrogen gas and inert gas.

In one embodiment of the present invention, the "carbon-containing gas" as presented in the present specification may mean that it is described as an integral gas that includes both a gas capable of forming activated carbon and hydrogen gas.

In one embodiment of the present invention, the "carbon-containing gas" as presented in the present specification may mean a gas capable of forming activated carbon and an integrated gas including hydrogen gas and inert gas.

In one embodiment of the present invention, the method of fabricating the substrate growth graphene comprises the steps of removing the metal layer while maintaining the APCVD, maintaining the high mobility of the carbon that is unable to grow on the metal to be removed, It can grow. In one embodiment of the present invention, the nucleation of a new graphene can be inhibited because carbon with high mobility is transferred to the graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, an etching gas is supplied to remove the metal layer in the metal layer removing step. When the substrate is etched for a sufficient time until all of the metal layer is removed according to the method of manufacturing the substrate grown graphene, the graphene is brought into contact with the substrate without interposing a metal layer therebetween.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphenes is also described below. With the APCVD maintained, the metal layer is removed by an etching gas such as chlorine. Then, on the surface of the metal layer, carbon grows as graphene. If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate.

Therefore, unlike the conventional method using a metal catalyst, graphene can be directly grown on a substrate without containing a metal. In addition, in the conventional method of transferring a pattern of a graphene in advance, even if a small pattern of micrometer scale is tried to be made, damage is caused at the time of transferring. However, in the manufacturing method of the substrate growth graphene proposed in the present invention, the shape of the metal layer can be freely adjusted by performing selective etching to form a graphene pattern having a fine line width on the substrate. In addition, in the conventional method of transferring graphene to a large area of the substrate and then performing patterning by etching, there arises a problem that graphene is not accurately provided when the graphene is applied to a substrate having a structure already formed. However, in the manufacturing method of the substrate growth graphene proposed in the present invention, such a problem does not occur by freely adjusting the shape of the metal layer by performing selective etching. Here, the selective etching means performing the etching process to leave only a desired portion. Techniques for performing the etch process are known to those skilled in the art and are therefore not further described herein.

In one embodiment of the present invention, in addition to the method of performing the selective etching, the method of forming the metal layer may include a step of forming a resist mask by dissolving the resist mask after deposition of the metal layer, And removing the metal layer formed on the surface of the metal layer and providing a metal layer having a desired pattern and shape.

In one embodiment of the present invention, the method of manufacturing a substrate growth graphene includes setting a supply environment of an etching gas and a carbon-containing gas appropriately, and performing graphene growth so that a small number of single crystal graphenes .

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene is such that when the supply environment of the etching gas and the carbon-containing gas and the growth environment of the graphene are set appropriately and the growth of the graphene is performed, Of single crystal graphene.

In one embodiment of the present invention, in the method for producing substrate growth graphene, the metal of the metal layer is nickel and chlorine can be used as an etching gas. However, in one embodiment of the present invention, the method of manufacturing the substrate growth graphene may use any metal capable of growing carbon to graphene and an etching gas for the metal. In one embodiment of the present invention, the optional metal may refer to a metal selected from a single crystal metal, a polycrystalline metal, and the like. In one embodiment of the present invention, the optional metal may refer to a metal in which the atoms are aligned.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal layer may refer to a metal layer in which the atoms are aligned.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal of the metal layer is a pure metal composed of one metal element capable of growing into graphene by carbon and capable of being removed by an etching gas, May be used.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the method of manufacturing the substrate growth graphene comprises: (1) before performing the method of manufacturing the substrate growth graphene; Heating the copper layer (metal layer) at about 700 to 800 degrees Celsius; A process for removing oxides on the surface of the copper layer (metal layer) by supplying hydrogen of several tens sccm and applying hydrogen plasma prior to graphene growth can be additionally performed.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer can be subjected to chemical mechanical polishing (CMP) as an additional option to adjust the thickness and flatness of the metal layer to a desired level .

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may mean a metal layer on which a metal layer is deposited and selectively etched.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may refer to a metal layer which has undergone the deposition of a metal layer and CMP, followed by selective etching.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the metal layer may refer to a metal layer selected from one or more of a selectively etched metal layer, a metal layer subjected to a CMP process.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the substrate may be placed into the APCVD chamber with a metal layer provided to perform the method of manufacturing the substrate growth graphene.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the step of positioning the substrate includes a load-locked chamber positioning process, a roll-to-roll positioning process, .

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can appropriately adjust the environment of the substrate in the process before and after the graphene formation by using the load-lock chamber.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can appropriately adjust the graphene forming environment by using a load-lock chamber.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, besides the kind of the etching gas and the carbon-containing gas, the supply pressure, the supply range, the supply amount, the kind of the metal layer and the size of the chamber, Lt; / RTI >

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, in addition to the kind of the etching gas and the carbon-containing gas, the supply pressure, the supply range, the supply amount, the type of the metal layer, and the size of the chamber, , The temperature and the holding time of the APCVD process can be important factors.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the step of providing the metal layer provided on the substrate includes at least one of evaporation, electron beam evaporation, sputtering, atomic layer deposition (ALD) , Physical vapor deposition (PVD), and chemical vapor deposition (APCVD).

In one embodiment of the present invention, in the method of producing substrate growth graphene, hydrogen can affect the size and nucleation density of graphene crystals.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, hydrogen may be supplied in a state in which the flow of hydrogen is kept constant (for example, (Several sccm) may be included in the manufacturing process of the substrate growth graphene.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, a state in which the concentration distribution of hydrogen is kept constant during the process of manufacturing the substrate growth graphene, This may mean that it is included in the manufacturing process of graphene.

In one embodiment of the present invention, in the method of making a substrate growth graphene, the inert gas may be supplied with the carbon-containing gas during the method of manufacturing the substrate growth graphene, although not specifically described.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the formation of graphene by APCVD may be performed by, for example, heating to a temperature of about 1000 캜 and then injecting an etching gas and a carbon- (Or supply) the graphene by reaction of the carbon-containing gas on the metal layer formed on the substrate in the chamber. Therefore, the method of manufacturing the substrate growth graphene is continuously performed by the above Atmospheric Pressure Chemical Vapor Deposition (APCVD), but the metal layer is completely removed by the etching gas (or continuously supplying the etching gas) , And a method for manufacturing a substrate growth graphene in which graphenes are directly in contact with the substrate.

In one embodiment of the present invention, in the method of making a substrate growth graphene, the formation of graphene by APCVD can be achieved, for example, by heating to a temperature of about 900 to 1000 占 폚, Graphene is formed by the reaction of the carbon-containing gas on the metal layer formed on the substrate in the chamber. Therefore, the method of manufacturing the substrate growth graphene is continuously performed by the above Atmospheric Pressure Chemical Vapor Deposition (APCVD), but the metal layer is completely removed by the etching gas (or continuously supplying the etching gas) , And a method for manufacturing a substrate growth graphene in which graphenes are directly in contact with the substrate. In the APCVD process, it is important that the carbon-containing gas is uniformly injected in the entire metal layer region to form uniform graphene. In addition, it is important to uniformly spray the etching gas to uniformly remove the metal layer . When the above process is performed, a substrate growth graphene directly contacting graphene on the substrate can be formed.

It is assumed that a certain concentration of etching gas contacts the surface of the metal layer and the metal is etched in the same manner.

In this case, when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the starting point of graphene growth becomes random.

On the other hand, if the concentration distribution of the carbon-containing gas is uneven in the metal layer, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.

Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, the position where the crystal of graphene starts to grow and the direction of growth can be controlled.

In one embodiment of the present invention, the carbon-containing gas may only be selected from a compound containing carbon or a gas capable of forming activated carbon, with the concentration distribution of the hydrogen gas being kept constant. have.

In one embodiment of the present invention, the carbon-containing gas means a gas selected from a compound containing carbon or a gas capable of forming activated carbon in a state in which the concentration distribution of the hydrogen gas is kept constant, and an inert gas can do.

In one embodiment of the present invention, the carbon-containing gas is a gas comprising a carbon-containing compound or a gas capable of forming activated carbon, in a state where the flow of hydrogen is kept constant (e.g., several sccm) , Can only mean being selected.

In one embodiment of the present invention, the carbon-containing gas is a gas comprising a carbon-containing compound or a gas capable of forming activated carbon, in a state where the flow of hydrogen is kept constant (e.g., several sccm) , And inert gas.

In one embodiment of the present invention, the carbon-containing gas can mean a gaseous state selected from 30, 50, 70, 100 ppm consisting of hydrogen and methane.

In one embodiment of the present invention, the carbon-containing gas can mean a gaseous state selected from 30, 50, 70, 100 ppm consisting of methane.

In addition, if the concentration distribution of the etching gas can be set non-uniformly, the removal of the metal becomes faster where the concentration of the etching gas is high.

Thus, with a rapid removal of the metal, the carbon that can not grow on the rapidly removed metal can grow into graphene on a metal layer at a low concentration of the etching gas, while maintaining high mobility. In one embodiment of the present invention, the nucleation of a new graphene can be inhibited because carbon with high mobility is transferred to the graphene nucleated for the first time by metal layer (metal) removal, The crystal grain size of the fin can be increased.

Therefore, even when the concentration distribution of the carbon-containing gas in the metal layer is uniform, the growth of the graphen starts from a place where the concentration of the etching gas is low, and grows toward the place where the concentration of the etching gas is high.

Thus, by appropriately setting the concentration distribution of the etching gas, it is possible to control the position where the graphene crystals start to grow and the direction in which the graphene grows.

By controlling the starting point and direction of graphene growth in this manner, the grain boundaries can be controlled to a predetermined position because grain boundaries of graphene are formed only at the growth start point and at the growth end point connected to the graphenes, By reducing the growth start point of graphene, a very large grain size can be realized.

Therefore, in one embodiment of the present invention, if the shape of the metal layer is formed to have a three-dimensional height and the metal is rapidly removed by increasing the concentration of the etching gas at a high portion of the metal layer, Can realize a large crystal grain size.

It is also possible to appropriately combine the setting of the concentration distribution of the carbon-containing gas and the setting of the concentration distribution of the etching gas in the metal layer as described above to control the position where the growth of graphene crystals starts and the growth direction.

 In one embodiment of the present invention, a method of manufacturing a substrate growth graphene can be described as follows.

(One). The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(2). The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.

(3). In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.

(4). APCVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. (1) to (7), wherein the graphene directly contacting the surface of the substrate can realize a large grain diameter.

In one embodiment of the present invention, in order to prevent a metal layer from being formed in a portion other than the necessary portion, removal using a resist mask or the like can be carried out as described below. (One). Thereby forming a resist mask. Techniques for forming a resist mask are known to those skilled in the art and are therefore not described further herein, (2). A deposition process is performed to form a metal layer, (3). Next, the resist mask and the metal layer formed on the surface of the resist mask are removed by dissolving the resist mask, and a metal layer having a desired pattern and shape is provided. The steps following the steps (1) to (3) are performed .

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). The concentration of the etching gas is raised so that the metal is quickly removed, and the concentration of the etching gas is low in the lower portion (A point) on one side of the metal layer.

(5). The concentration of the carbon-containing gas is raised at a low point (point A) on one side of the metal layer in the metal layer.

(6). APCVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low point (point A) on one side of the metal layer becomes the start point of the growth of graphene.

(8). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the direction of growth of the graphene grows graphene from low to high in the metal layer (that is, it grows from left to right or from right to left in this embodiment)

(9). (1) to (9), wherein the metal layer is finally removed, and the graphene is brought into direct contact with the surface of the substrate.

<B>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). The concentration of the etching gas is set at a high level on the metal layer so that the metal is quickly removed, and the concentration of the etching gas is set low in the metal layer (points A and B).

(5). In the metal layer, the concentration of the carbon-containing gas is raised at the low points (points A and B) of the metal layer.

(6). APCVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low points (points A and B) of the metal layer are the starting positions for the growth of graphene.

(8). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the direction of growth of the graphene grows graphene from the low to the high position of the metal layer (that is, it grows laterally in this embodiment)

(9). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. In one embodiment of the present invention, the grain boundaries of graphene occur in the central portion where the growth direction collides. In addition, the step (1) to (9), in which the grains of graphene can occur at the beginning of growth, may be provided.

<C>

This embodiment is characterized in that, when the above embodiment B is repeated twice, the direction of the slit mask is rotated by 90 degrees so that the substrate growth graphene having the crystal grain boundaries of the square pattern (or checker pattern) Lt; / RTI &gt;

(One). On the basis of the description of the embodiment B , a slit mask is provided so that the slit is located in the left-right direction. Incidentally, in one embodiment of the present invention, the slits are repeatedly arranged regularly (the width of the slit is narrower than the slit described below).

(2). Then, metal is supplied to form a metal layer in a line. Then, the height of the metal layer changes along the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(3). Based on the description of the above embodiment B , a method of manufacturing a substrate growth graphene is carried out. Then graphene grows up and down.

(4). When all of the metal is removed, the line graphene (s) are formed.

(5). Thereafter, the line of the substrate yes to the upper pin (s) based on the technique described in Example <B>, the slit is linearly arranged yes and parallel to the longitudinal direction of the pin (s), exactly linear graphene (or linearly arranged A slit mask is provided so that the slit is disposed in the middle of the graphenes. Incidentally, the slits are repeatedly arranged regularly.

(6). Then, metal is supplied to form a metal layer. Then, the height of the metal layer changes along the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene (s). Further, a part of the line-shaped graphene (s) may remain in the metal layer by adjusting the amount of the supplied metal, the size of the slit of the slit mask, and the distance from the substrate.

(7). Thereafter, a method for manufacturing a substrate growth graphene is carried out based on the description of the above embodiment <B> . Then, the remaining linear line graphene (s) is set as the starting position, and the plane graphene is moved in the direction orthogonal to the long direction of the slit of the slit mask, that is, perpendicular to the long direction of the linear graphene , And grow in the lateral direction.

(8). (1) to (8) in which, when the metal is completely removed, plane grains are formed which are divided into crystal grains of a square pattern (or checker pattern).

Therefore, in one embodiment of the present invention, the method of manufacturing the substrate growth graphene is such that the graphene has a regular checkered pattern (first direction) and a regular checkered pattern As shown in FIG. That is, graphene made of a single crystal of a square can be formed so as to cover the substrate.

In one embodiment of the present invention, since the method of manufacturing a substrate growth graphene can control the starting point and direction of growth of graphene on the substrate, the grain boundary can be formed into various shapes such as a square or a rectangle can do. Furthermore, the area of the graphene of the single crystal can be significantly increased as compared with the conventional one. Of course, in one embodiment of the present invention, a small amount of polycrystalline may remain with the single crystal.

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). The shape of the metal layer is formed so as to have a three-dimensional height in the vertical direction in a line. For example, the thickness of the metal layer is set from bottom to top, and the thickness gradually increases and rapidly returns to its original shape. That is, the metal layer is formed so as to have three-dimensional height in the vertical direction in a line. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(2). The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is set low at a low level of the metal layer.

(3). In the metal layer, the concentration of the carbon-containing gas is raised at the lower part of the metal layer.

(4). APCVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). (1) to (7), wherein the metal layer is finally removed, and the line-like graphene is brought into direct contact with the surface of the substrate.

<B>

(One). After the description of the embodiment A , the shape of the metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the metal layer is formed so as to have a three-dimensional height in the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, on the basis of the technique described in Example <A>, growth substrate Yes performs the manufacturing method of the pin. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). (1) to (3) in which the metal grains are finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate, wherein the surface graphenes are formed of a single crystal. have.

<C>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed into two square patterns of small and large size. The two large and small square patterns can have a shape in which a first area made up of a very small square is connected to a vertex at the lower left of a second area made up of a large square (for example, a first area made up of a very small square May refer to a shape in which the center point of the second square is connected to the lower left vertex of the second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the description of the embodiment < RTI ID = 0.0 > A &lt; / RTI &gt; Then, graphene grows for the first time near the vertices of the first region, that is, the lower left corner of the two small rectangular patterns. The graphenes growing here can generally be polycrystalline.

(3). As a result of continuing the method of manufacturing the substrate growth graphene on the basis of the description of the embodiment A as described above, at least one of the polycrystals becomes a crystal nucleus due to bending near the lower left corner of two large and large square patterns . Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphen grows such that the single crystal is grown as nuclei at the other three vertexes in the second region, that is, widened in the right upper direction.

(5). (1) to (5), in which the crystal nuclei are grown by bending, and thus, the finally obtained small and large square grains having a square pattern form a single crystal. Followed by a subsequent step.

<D>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed in a checkerboard pattern. The checkerboard pattern may have a first region of a very small square connected to a lower left vertex of a second square region (e.g., a center point of a first region of a very small square center point) may refer to a shape connected to the lower left vertex of a second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the description of the embodiment < RTI ID = 0.0 > A &lt; / RTI &gt; Then, graphene grows for the first time near the apex of the first region, that is, the lower left corner of the checkered pattern. The graphenes growing here can generally be polycrystalline.

(3). Based on the description of the embodiment A , if the method of manufacturing the substrate growth graphene is continued, at least one of the polycrystals is put into the crystal nucleus due to bending near the lower left corner of the checkered pattern. Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphen grows such that the single crystal is grown as nuclei at the other three vertexes in the second region, that is, widened in the right upper direction.

(5). (1) to (5), in which the crystal grains to be grown here are embedded by bending, so that the finally obtainable checkerboard pattern graphene is a single crystal. can do.

In one embodiment of the present invention, the shapes of the first region and the second region are not limited to a square, and any shape can be used. For example, if the second region has a plane such as a rectangular shape and is inclined so as to become thicker toward the other three apexes from the lower left vertex, which is the first region, a large area graphene can be formed have. On the other hand, the first region may be any arbitrary shape capable of forming a bend, and may have a shape other than a square, such as a circular shape. In one embodiment of the present invention, the metal layer has a shape in which a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate are in contact with the curvature, The thickness of the metal layer may be thinner than the thickness of the second region and the second region may be inclined to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend. (For example, (1) a first region consisting of a very small square extending in parallel to the surface of the substrate and a vertex below the left side of the second region (the apex portion widening parallel to the surface of the substrate) (2) The center point of the first region made up of a very small square is a vertex located at the lower left of the second region made of a large square having a tilt (the apex portion is parallel to the surface of the substrate Widened).

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). The metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. For example, the thickness of the metal layer is set so that the thickness gradually increases from the bottom to the top, and repeats a sudden return to the original state. That is, the metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(2). The height of the at least one metal layer is set so as to raise the concentration of the etching gas so that the metal is quickly removed and the concentration of the etching gas at the lower portion of the at least one metal layer is low.

(3). In one or more metal layers, the concentration of the carbon-containing gas is increased at the bottom of the at least one metal layer.

(4). APCVD is performed.

(5). Then, with rapid removal of the metal, the carbon that can not grow on the rapidly removed metal grows into graphene at a low concentration of at least one etching gas while maintaining high mobility. That is, the lower part of the at least one metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the line-like graphene comes into direct contact with the surface of the substrate. Therefore, the above-described linear graphene can be provided with the steps (1) to (7) consisting of the grain boundary being formed in the middle.

<B>

(One). After the description of the embodiment A , the shape of the at least one metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the at least one metal layer is formed so as to have a three-dimensional height in the left-right direction in accordance with the grain boundary formed in the middle. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, on the basis of the technique described in Example <A>, growth substrate Yes performs the manufacturing method of the pin. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). (1) to (3) in which the metal layer is finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate.

<C>

(One). The embodiments based on the techniques described in <A>, and one or more linearly arranged yes form the pin, and on the basis of the technique described in Example <B>, may be one or more surfaces Yes form a pin.

(2). Thus, the grain boundaries of the grown portion of the plane graphen grow until it reaches the side plane graphene (the portion where another linear graphene was disposed).

(3). When graphenes are formed in this way, line segments connecting lattice points close to each other become grain boundaries, and single crystals are arranged in a lattice pattern. Here, the smaller the size of the checkered pattern, the smaller the graphene crystal size, but the shorter the manufacturing time for covering the substrate. Therefore, the size and number of the checkered pattern can be appropriately selected according to the application and the manufacturing cost, and can include the process leading to (1) to (3).

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). The metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. For example, the thickness of the metal layer is set so that the thickness gradually increases from the bottom to the top, and repeats a sudden return to the original state. That is, the metal layer is formed so as to have at least one line-shaped three-dimensional height in the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(2). The height of the at least one metal layer is set so as to raise the concentration of the etching gas so that the metal is quickly removed and the concentration of the etching gas at the lower portion of the at least one metal layer is low.

(3). The concentration distribution of the carbon-containing gas in one or more metal layers is uniformly configured.

(4). APCVD is performed.

(5). Then, with rapid removal of the metal, the carbon that can not grow on the rapidly removed metal grows into graphene at a low concentration of at least one etching gas while maintaining high mobility. That is, the lower part of the at least one metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the line-like graphene comes into direct contact with the surface of the substrate. Therefore, the above-described linear graphene can be provided with the steps (1) to (7) consisting of the grain boundary being formed in the middle.

<B>

(One). After the description of the embodiment A , the shape of the at least one metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the at least one metal layer is formed so as to have a three-dimensional height in the left-right direction in accordance with the grain boundary formed in the middle. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, on the basis of the technique described in Example <A>, growth substrate Yes performs the manufacturing method of the pin. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). (1) to (3) in which the metal layer is finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate.

<C>

(One). The embodiments based on the techniques described in <A>, and one or more linearly arranged yes form the pin, and on the basis of the technique described in Example <B>, may be one or more surfaces Yes form a pin.

(2). Thus, the grain boundaries of the grown portion of the plane graphen grow until it reaches the side plane graphene (the portion where another linear graphene was disposed).

(3). When graphenes are formed in this way, line segments connecting lattice points close to each other become grain boundaries, and single crystals are arranged in a lattice pattern. Here, the smaller the size of the checkered pattern, the smaller the graphene crystal size, but the shorter the manufacturing time for covering the substrate. Therefore, the size and number of the checkered pattern can be appropriately selected according to the application and the manufacturing cost, and can include the process leading to (1) to (3).

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene can be described as follows.

(One). The shape of the metal layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(2). The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.

(3). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(4). APCVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. (1) to (7), wherein the graphene directly contacting the surface of the substrate can realize a large grain diameter.

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). The concentration of the etching gas is raised so that the metal is quickly removed, and the concentration of the etching gas is low in the lower portion (A point) on one side of the metal layer.

(5). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(6). APCVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low point (point A) on one side of the metal layer becomes the start point of the growth of graphene.

(8). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the direction of growth of the graphene grows graphene from low to high in the metal layer (that is, it grows from left to right or from right to left in this embodiment)

(9). (1) to (9), wherein the metal layer is finally removed, and the graphene is brought into direct contact with the surface of the substrate.

<B>

(One). A substrate is prepared.

(2). Then, a slit mask (for example, a slit provided on a metal foil or the like) is disposed at a predetermined distance from the substrate, and the metal is supplied by sputtering via the slit. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(3). Then, the metal layer is formed to be high in the vicinity of the slit, and the metal layer is formed to be low when the slit is moved away from the slit. In this embodiment, since the metal is fed from the top to the bottom, the shape of the metal layer is symmetrical (points A and B).

(4). The concentration of the etching gas is set at a high level on the metal layer so that the metal is quickly removed, and the concentration of the etching gas is set low in the metal layer (points A and B).

(5). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(6). APCVD is performed.

(7). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the low points (points A and B) of the metal layer are the starting positions for the growth of graphene.

(8). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the direction of growth of the graphene grows graphene from the low to the high position of the metal layer (that is, it grows laterally in this embodiment)

(9). Finally, the metal layer is completely removed and the graphene comes into direct contact with the surface of the substrate. In one embodiment of the present invention, the grain boundaries of graphene occur in the central portion where the growth direction collides. In addition, the step (1) to (9), in which the grains of graphene can occur at the beginning of growth, may be provided.

<C>

This embodiment is characterized in that, when the above embodiment B is repeated twice, the direction of the slit mask is rotated by 90 degrees so that the substrate growth graphene having the crystal grain boundaries of the square pattern (or checker pattern) Lt; / RTI &gt;

(One). On the basis of the description of the embodiment B , a slit mask is provided so that the slit is located in the left-right direction. Incidentally, in one embodiment of the present invention, the slits are repeatedly arranged regularly (the width of the slit is narrower than the slit described below).

(2). Then, metal is supplied to form a metal layer in a line. Then, the height of the metal layer changes along the vertical direction. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(3). Based on the description of the above embodiment B , a method of manufacturing a substrate growth graphene is carried out. Then graphene grows up and down.

(4). When all of the metal is removed, the line graphene (s) are formed.

(5). Thereafter, the line of the substrate yes to the upper pin (s) based on the technique described in Example <B>, the slit is linearly arranged yes and parallel to the longitudinal direction of the pin (s), exactly linear graphene (or linearly arranged A slit mask is provided so that the slit is disposed in the middle of the graphenes. Incidentally, the slits are repeatedly arranged regularly.

(6). Then, metal is supplied to form a metal layer. Then, the height of the metal layer changes along the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene (s). Further, a part of the line-shaped graphene (s) may remain in the metal layer by adjusting the amount of the supplied metal, the size of the slit of the slit mask, and the distance from the substrate.

(7). Thereafter, a method for manufacturing a substrate growth graphene is carried out based on the description of the above embodiment <B> . Then, the remaining linear line graphene (s) is set as the starting position, and the plane graphene is moved in the direction orthogonal to the long direction of the slit of the slit mask, that is, perpendicular to the long direction of the linear graphene , And grow in the lateral direction.

(8). (1) to (8) in which, when the metal is completely removed, plane grains are formed which are divided into crystal grains of a square pattern (or checker pattern).

Therefore, in one embodiment of the present invention, the method of manufacturing the substrate growth graphene is such that the graphene has a regular checkered pattern (first direction) and a regular checkered pattern As shown in FIG. That is, graphene made of a single crystal of a square can be formed so as to cover the substrate.

In one embodiment of the present invention, since the method of manufacturing a substrate growth graphene can control the starting point and direction of growth of graphene on the substrate, the grain boundary can be formed into various shapes such as a square or a rectangle can do. Furthermore, the area of the graphene of the single crystal can be significantly increased as compared with the conventional one. Of course, in one embodiment of the present invention, a small amount of polycrystalline may remain with the single crystal.

In one embodiment of the present invention, this embodiment is a method for manufacturing a substrate growth graphene in which graphenes are grown in a desired direction from a desired position as the thickness of the metal layer is unevenly formed. The method of manufacturing the substrate growth graphene is described below as <A>, <B>, <C> .

<A>

(One). The shape of the metal layer is formed so as to have a three-dimensional height in the vertical direction in a line. For example, the thickness of the metal layer is set from bottom to top, and the thickness gradually increases and rapidly returns to its original shape. That is, the metal layer is formed so as to have three-dimensional height in the vertical direction in a line. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

(2). The concentration of the etching gas is set so that the metal is quickly removed at a high level of the metal layer and the concentration of the etching gas is low at the low level of the metal layer.

(3). The concentration distribution of the carbon-containing gas in the metal layer is uniformly formed.

(4). APCVD is performed.

(5). Then, with the rapid removal of the metal, the carbon that can not grow on the rapidly removed metal is grown to the graphene at a low concentration of the etching gas while maintaining high mobility. That is, the lower part of the metal layer becomes the starting position of the growth of graphene.

(6). If the etching is continued while maintaining the APCVD, the grown graphene grows further. Since the etching is performed while maintaining the APCVD, carbon grows to have a crystal structure with the already grown graphene. At this time, the growth direction of the graphene grows from the low to the high position of the metal layer.

(7). (1) to (7), wherein the metal layer is finally removed, and the line-like graphene is brought into direct contact with the surface of the substrate.

<B>

(One). After the description of the embodiment A , the shape of the metal layer is formed so as to have a three-dimensional height in the lateral direction. For example, the thickness of the metal layer is directed from right to left, and the thickness gradually increases to return to the original state. That is, the metal layer is formed so as to have a three-dimensional height in the lateral direction. In addition, a resist mask or the like may be suitably used to remove the metal layer from being formed on the line-shaped graphene. Further, by adjusting the amount of the metal to be supplied, the size of the slit of the slit mask, and the distance from the substrate, a part of the line-like graphene may remain in the metal layer.

(2). Then, on the basis of the technique described in Example <A>, growth substrate Yes performs the manufacturing method of the pin. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). (1) to (3) in which the metal grains are finally removed, and the surface graphenes are brought into direct contact with the surface of the substrate, wherein the surface graphenes are formed of a single crystal. have.

<C>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed into two square patterns of small and large size. The two large and small square patterns can have a shape in which a first area made up of a very small square is connected to a vertex at the lower left of a second area made up of a large square (for example, a first area made up of a very small square May refer to a shape in which the center point of the second square is connected to the lower left vertex of the second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the description of the embodiment < RTI ID = 0.0 > A &lt; / RTI &gt; Then, graphene grows for the first time near the vertices of the first region, that is, the lower left corner of the two small rectangular patterns. The graphenes growing here can generally be polycrystalline.

(3). As a result of continuing the method of manufacturing the substrate growth graphene on the basis of the description of the embodiment A as described above, at least one of the polycrystals becomes a crystal nucleus due to bending near the lower left corner of two large and large square patterns . Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphen grows such that the single crystal is grown as nuclei at the other three vertexes in the second region, that is, widened in the right upper direction.

(5). (1) to (5), in which the crystal nuclei are grown by bending, and thus, the finally obtained small and large square grains having a square pattern form a single crystal. Followed by a subsequent step.

<D>

(One). A metal layer is provided on the substrate provided with the bend. The metal layer may be formed in a checkerboard pattern. The checkerboard pattern may have a first region of a very small square connected to a lower left vertex of a second square region (e.g., a center point of a first region of a very small square center point) may refer to a shape connected to the lower left vertex of a second square area. The thickness of the metal layer is inclined such that the first region is thinner than the second region and is thicker from the lower left vertex to the other three vertices in the second region.

(2). Based on the description of the embodiment < RTI ID = 0.0 > A &lt; / RTI &gt; Then, graphene grows for the first time near the apex of the first region, that is, the lower left corner of the checkered pattern. The graphenes growing here can generally be polycrystalline.

(3). Based on the description of the embodiment A , if the method of manufacturing the substrate growth graphene is continued, at least one of the polycrystals is put into the crystal nucleus due to bending near the lower left corner of the checkered pattern. Therefore, the width of the bending is made sufficiently small. Then, the graphen that grows in the portion in contact with the curvature of the second region becomes a single crystal.

(4). In the present invention, graphen grows such that the single crystal is grown as nuclei at the other three vertexes in the second region, that is, widened in the right upper direction.

(5). (1) to (5), in which the crystal grains to be grown here are embedded by bending, so that the finally obtainable checkerboard pattern graphene is a single crystal. can do.

In one embodiment of the present invention, the shapes of the first region and the second region are not limited to a square, and any shape can be used. For example, if the second region has a plane such as a rectangular shape and is inclined so as to become thicker toward the other three apexes from the lower left vertex, which is the first region, a large area graphene can be formed have. On the other hand, the first region may be any arbitrary shape capable of forming a bend, and may have a shape other than a square, such as a circular shape. In one embodiment of the present invention, the metal layer has a shape in which a first region spreading in parallel to the surface of the substrate and a second region spreading in parallel to the surface of the substrate are in contact with the curvature, The thickness of the metal layer may be thinner than the thickness of the second region and the second region may be inclined to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend. (For example, (1) a first region consisting of a very small square extending in parallel to the surface of the substrate and a vertex below the left side of the second region (the apex portion widening parallel to the surface of the substrate) (2) The center point of the first region made up of a very small square is a vertex located at the lower left of the second region made of a large square having a tilt (the apex portion is parallel to the surface of the substrate Widened).

In one embodiment of the present invention, the setting of the concentration distribution of the carbon-containing gas can be set by adjusting the partial pressure of the carbon-containing gas. In one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas with hydrogen gas to a desired concentration. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the argon gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the inert gas.

In one embodiment of the present invention, the carbon-containing gas may be supplied with hydrogen.

In one embodiment of the present invention, the carbon-containing gas may be supplied as argon.

In one embodiment of the present invention, the carbon-containing gas may be supplied, such as hydrogen and argon. For example, the carbon-containing gas may mean a carbon-containing gas of about 1000 ppm (2.5% hydrogen and 0.3% methane and the balance gas comprises argon).

In one embodiment of the present invention, the concentration distribution of the etching gas can be set by adjusting the partial pressure of the etching gas. In one embodiment of the present invention, the partial pressure of the etching gas can be adjusted by diluting the chlorine to a desired concentration.

In one embodiment of the present invention, a process of forming the shape of the metal layer to have a three-dimensional height or a process of forming the thickness of the metal layer non-uniformly can be described as follows.

(One). One or more slits are formed on a metal foil or the like, and a slit mask is formed. Then, the slit mask is arranged apart from the substrate by a predetermined distance, and the metal is supplied by sputtering to reach the substrate via the slit mask. Then, the metal layer becomes thick at a portion opposed to the slit of the slit mask, and the metal layer becomes thinner as it moves away from the slit.

(2). One or more slits are formed on a metal foil or the like, and a slit mask is formed. When the slit mask is spaced apart from the substrate by a predetermined distance and the sputtering direction is horizontal with respect to the substrate surface, the metal layer is formed thick in the vicinity of the slit and the thickness of the metal layer Lt; / RTI &gt;

(3). When the slit mask is spaced apart from the substrate by a predetermined distance and the sputtering direction is perpendicular to the surface of the substrate, the metal layer is formed thick in the vicinity of the slit and the thickness of the metal layer is thin Jima,

(4). In addition, it is also possible to use the obstacle in place of the slit mask by disposing the obstacle in contact with the substrate surface. In this case, since the obstacle becomes an obstacle to sputtering, the metal layer becomes thinner in the vicinity of the obstacle, and the metal layer becomes thicker as it gets farther from the obstacle,

(5). In addition, when metal is supplied by sputtering, one or more movable shutters may be provided and the shutter may be closed gradually. (1) to (5), wherein the metal layer in the vicinity of the first closed portion of the shutter is thin and the metal layer in the vicinity of the closed portion at the end of the shutter is thickened. In one embodiment of the present invention, a resist mask or the like may be used to remove the metal layer from the portion other than the necessary portion.

In one embodiment of the present invention, after the APCVD process in the method of manufacturing the substrate growth graphene, the cooling process may be performed on the formed graphene. The cooling step is a method for uniformly growing the formed graphenes so that the graphenes can be uniformly arranged. Since rapid cooling may cause cracking of the graphene, it is preferable that the cooling step is gradually cooled at a constant speed. For example, it is possible to use a method such as natural cooling. The natural cooling is obtained by simply removing the heat source used for the heat treatment. Thus, it is possible to obtain a sufficient cooling rate even by removing the heat source.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene may comprise further supplying argon with the etching gas and the carbon-containing gas.

In one embodiment of the present invention, the method of manufacturing substrate growth graphene may comprise further supplying a reducing gas with an etching gas and a carbon-containing gas. For example, the reducing gas may comprise hydrogen, helium, argon, or nitrogen.

In one embodiment of the present invention, in the method of manufacturing substrate growth graphene, the etching gas may refer to an etching gas comprising chlorine or chlorine. In one embodiment of the present invention, the etching gas is not limited to an etching gas containing chlorine or chlorine, but can be used if it is an etching gas of a metal layer capable of growing graphene.

In one embodiment of the present invention, in the method of manufacturing substrate growth graphene, the number of graphene layers may be several to fifty, but is not limited thereto. The APCVD process, the metal layer removal (etching) process, and the cooling process for providing the number of graphene layers are performed one or more times.

In one embodiment of the present invention, in the method of producing substrate growth graphene, the carbon-containing gas may include, but is not limited to, methane.

In one embodiment of the present invention, in the method for producing substrate growth graphene, the carbon-containing gas is composed of a hydrogen gas and a gas capable of forming activated carbon.

In one embodiment of the present invention, in the method of manufacturing substrate growth graphene, the carbon-containing gas is supplied in a state in which the concentration distribution of the hydrogen gas is kept constant, that is, A compound containing carbon, or a gas capable of forming activated carbon. However, it is also possible to exist with an inert gas (for example, argon).

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the carbon-containing gas is in a state in which the concentration distribution of the hydrogen gas is kept constant, that is, For example, a compound comprising carbon or a gas capable of forming activated carbon, provided in several sccm. However, it is also possible to exist with an inert gas (for example, argon).

In one embodiment of the present invention, hydrogen (or hydrogen gas) can play a role in determining the size and domain shape of graphene crystals.

In one embodiment of the present invention, in the method for producing substrate growth graphene, the carbon-containing gas may include, but is not limited to, a carbon-containing compound having from about 1 to about 10 carbon atoms. For example, the carbon-containing gas may be selected from cyclopentane, cyclopentadiene, hexane, hexene, cyclohexane, cyclohexadiene, benzene, toluene, carbon monoxide, carbon dioxide, methane, ethane, ethylene, ethanol, acetylene, But are not limited to, those selected from the group consisting of butane, butylene, butadiene, pentane, pentene, pentene, pentadiene, and combinations thereof.

In one embodiment of the present invention, in the method of manufacturing substrate growth graphene, the etching gas and the carbon-containing gas in the chamber of the APCVD apparatus are either only the etching gas and the carbon-containing gas, It is also possible to exist with an inert gas.

In one embodiment of the present invention, the carbon-containing gas may only be selected from a compound containing carbon or a gas capable of forming activated carbon, with the concentration distribution of the hydrogen gas being kept constant. have. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, the carbon-containing gas is a gas comprising a carbon-containing compound or a gas capable of forming activated carbon, in a state where the flow of hydrogen is kept constant (e.g., several sccm) , Can only mean being selected. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, the carbon-containing gas may be meant to include hydrogen in addition to the carbon-containing compound. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, the carbon-containing gas may mean containing hydrogen along with a gas capable of forming activated carbon. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the thickness of the metal layer may have a thickness selected from a range of from about several tens nanometers to several tens of micrometers, but is not limited thereto.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can be provided with a large area graphene by freely adjusting the size of the metal layer. In addition, various types of graphenes may be provided since the etching gas and the carbon-containing gas are supplied in a gaseous state (supplied in a gaseous state) and there is no restriction on the shape of the metal layer. For example, graphene having a three-dimensional solid shape may also be provided.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can control the thickness of the graphene by controlling the APCVD execution time and the etching execution time.

In one embodiment of the present invention, the method of manufacturing the substrate growth graphene can control the thickness of the graphene by simultaneously adjusting the APCVD execution time and the etching execution time.

In one embodiment of the present invention, a method of fabricating a substrate growth graphene comprises providing a metal layer on a substrate, thereafter supplying an etch gas and a carbon-containing gas and performing atmospheric pressure chemical vapor deposition (APCVD) And removing the metal layer with an etching gas while maintaining the metal layer on the substrate, the method comprising: growing graphene on a substrate without a metal layer; The method comprising the steps of:

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the substrate is provided with one or more Piezo material, magnetic particles, charge-bearing particles, can do.

In one embodiment of the present invention, Piezo refers to the converse piezoelectric effect. That is, mechanical deformation occurs when an electric field is applied.

In one embodiment of the present invention, in the method of producing substrate growth graphene, the metal of the metal layer is nickel and the etching gas is chlorine; The method comprising the steps of:

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &

c. The substrate being sequentially loaded into the deposition chamber and the APCVD chamber using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the invention, the method of manufacturing the substrate growth graphene may further comprise cooling the substrate growth graphene.

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

c. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the invention, the method of manufacturing the substrate growth graphene may further comprise cooling the substrate growth graphene.

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the invention, the method of manufacturing the substrate growth graphene may further comprise cooling the substrate growth graphene.

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

d. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the invention, the method of manufacturing the substrate growth graphene may further comprise cooling the substrate growth graphene.

In one embodiment of the present invention, the method of fabricating the substrate growth graphene may additionally comprise several steps, but it is basically to provide a metal layer, to supply an etch gas and a carbon-containing gas and to maintain atmospheric pressure chemical vapor deposition (APCVD) And a removing step of removing the metal layer with an etching gas while the metal layer is being formed on the substrate so as to grow the graphene on the substrate without the metal layer.

In one embodiment of the present invention, performing atmospheric pressure chemical vapor deposition (APCVD) in the method of making substrate growth graphene is performed at a point in time when graphene is grown, i.e., at a sufficient heating temperature (APCVD) from the point at which the etching gas and the carbon-containing gas are supplied to grow the graphene.

'' -

In one embodiment of the present invention, a method of making a substrate growth graphene comprises

a. Providing a metal layer on the substrate Thereafter,

b. An etching gas and a carbon-containing gas are supplied and atmospheric pressure chemical vapor deposition (APCVD) is performed,

c. Supplying a carbon-containing gas in the etching gas supply, growing graphene on the metal layer,

d. In the step c), continuous atmospheric pressure chemical vapor deposition (APCVD) is performed, and the metal of the metal layer is entirely and continuously removed by the etching gas, Growing graphene; of

And a method for manufacturing a substrate growth graphene.

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the carbon-containing gas supply is configured such that the concentration distribution of the carbon-containing gas in the metal layer is unevenly distributed, Thereby realizing a large crystal graphene; .

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the etching gas supply is performed such that the concentration distribution of the etching gas in the metal layer is made non-uniform and the starting point and direction of the growth of graphene are controlled, Realizing a large crystal of the pin; .

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal layer has a slope with respect to the thickness of the metal layer, and the etching gas is supplied at a higher portion of the metal layer by increasing the concentration of the etching gas, And the concentration of the etching gas is low in the lower part of the metal layer so that the lower part of the metal layer becomes the starting position of the growth of graphene; .

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal layer has a first region spreading parallel to the surface of the substrate and a second region spreading parallel to the surface of the substrate, The thickness of the metal layer is thinner than that of the second region and the thickness of the metal layer is inclined so that the thickness of the metal layer is increased when the second region is away from the bend that; .

In one embodiment of the present invention, in the method of manufacturing substrate growth graphene, the metal layer has a slope in the thickness of the metal layer, and the carbon-containing gas supply is configured such that the concentration of the carbon- And the concentration of the carbon-containing gas in the lower portion of the metal layer is higher than that of the metal layer. The etching gas is supplied at a higher portion of the metal layer by increasing the concentration of the etching gas, So that the lower part of the metal layer becomes the starting position of the growth of graphene; .

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal layer has a first region spreading parallel to the surface of the substrate and a second region spreading parallel to the surface of the substrate, The thickness of the metal layer is thinner than that of the second region and the thickness of the metal layer is inclined so that the thickness of the metal layer is increased when the second region is away from the bend that; .

In one embodiment of the present invention, in the method of producing substrate growth graphene, the carbon-containing gas supply causes the concentration distribution of the carbon-containing gas in the metal layer to be uneven in a direction parallel to the surface of the substrate Growing graphene in a direction parallel to the surface of the substrate; .

In one embodiment of the present invention, in the method for manufacturing a substrate growth graphene, the etching gas supply causes a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer to be uneven, Growing graphene in a direction parallel to the surface; .

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene,

The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the carbon-containing gas in the metal layer,

The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the etching gas in the metal layer,

Growing graphene in a direction parallel to the surface of the substrate; .

In one embodiment of the present invention, a method of making a substrate growth graphene comprises the method of making a substrate growth graphene described as being selected from the following <A>, <B>, <C>:

<A>

The carbon-containing gas supply may include growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer is uneven; &Lt; / RTI &gt;

<B>

Supplying the etching gas includes growing a graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer becomes uneven; &Lt; / RTI &gt;

<C>

The carbon-containing gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the carbon-containing gas in the metal layer,

The etching gas supply causes the concentration distribution in the direction parallel to the surface of the substrate to be uneven among the concentration distribution of the etching gas in the metal layer,

Growing graphene in a direction parallel to the surface of the substrate; &Lt; / RTI &gt;

In one embodiment of the present invention, in the method for producing a substrate growth graphene, the metal of the metal layer is iron, nickel, cobalt or an alloy containing them and the etching gas is chlorine; .

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &

c. The substrate being sequentially loaded into the deposition chamber and the APCVD chamber using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

c. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And

b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And

c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And

d. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the grown graphene on the substrate after performing the method of manufacturing the substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene further comprises cooling the graphene grown on the substrate; The method comprising the steps of:

In one embodiment of the present invention, in the method of making a substrate growth graphene, growing graphene is performed by a roll-to-roll process; .

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas supply of the metal may be performed prior to performing the APCVD, and thus the present invention may be implemented by performing APCVD during the etching of the metal A method of manufacturing a substrate growth graphen may be provided.

In one embodiment of the present invention, in the method of manufacturing the substrate growth graphene, the etching gas supply of the metal is performed before supplying the carbon-containing gas, and thus, -Containing gas to the substrate.

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;

b. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;

c. Constituting a concentration distribution of the carbon-containing gas in the metal layer uniformly, and

d. Performing APCVD, and

e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And

f. Continuing etching with APCVD maintained, growing carbon so as to form a crystal structure with already grown graphene, and

g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and

h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To

The method of manufacturing a substrate growth graphene according to claim 1,

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;

b. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;

c. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and

d. Performing APCVD, and

e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And

f. Continuing etching with APCVD maintained, growing carbon so as to form a crystal structure with already grown graphene, and

g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and

h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To

The method of manufacturing a substrate growth graphene according to claim 1,

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;

b. So that the etching gas is uniformly injected to uniformly remove the metal layer, and

c. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and

d. Performing APCVD, and

e. With the removal of the metal, the carbon that can not grow on the metal to be removed remains in high mobility, where the concentration of the carbon-containing gas is high, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And

f. Continuing etching with APCVD maintained, growing carbon so as to form a crystal structure with already grown graphene, and

g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and

h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To

The method of manufacturing a substrate growth graphene according to claim 1,

In one embodiment of the present invention, in the method of manufacturing a substrate growth graphene, the metal layer has a first region spreading parallel to the surface of the substrate and a second region spreading parallel to the surface of the substrate, The thickness of the metal layer is thinner than that of the second region and the thickness of the metal layer is inclined so that the thickness of the metal layer is increased when the second region is away from the bend that; .

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene further comprises cooling the graphene directly contacting the surface of the substrate; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene comprises:

Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface are manufactured by a method for producing a substrate growth graphene,

Preparing surface graphenes growing in a second direction parallel to the surface from the linear graphenes and in direct contact with the surface by a method of manufacturing a substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a substrate growth graphene further comprises cooling the line graphene and cooling the plane graphene; The method comprising the steps of:

In one embodiment of the present invention, the present invention provides a substrate having a substrate growth graphene,

Wherein the substrate growth graphene directly contacts the surface of the substrate,

The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,

The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; &Lt; / RTI &gt;

In one embodiment of the present invention, the present invention provides a substrate having a substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,

Wherein the substrate growth graphene has a grain boundary along a second direction parallel to the surface,

The substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; &Lt; / RTI &gt; In one embodiment of the present invention, the present design is such that the first direction and the second direction are orthogonal; &Lt; / RTI &gt;

In one embodiment of the present invention, the present invention provides a substrate having a substrate growth graphene,

The substrate growth graphene directly contacts the surface of the substrate,

Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,

Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a second direction parallel to the surface,

The substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; &Lt; / RTI &gt; In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal, the interval of the grain boundaries along the first direction is constant, and the grain boundaries The spacing is constant; &Lt; / RTI &gt;

In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component characterized by comprising a method of manufacturing a substrate growth graphene.

In one embodiment of the present invention, a method of manufacturing an electronic component may mean a method of manufacturing a transistor, but the present invention is not limited thereto.

In one embodiment of the present invention, a manufacturing method of an electronic component may mean a manufacturing method of a central processing unit (CPU).

In one embodiment of the present invention, a manufacturing method of an electronic component may mean a manufacturing method of a memory.

In one embodiment of the present invention, the present invention provides an electronic component comprising the method of manufacturing an electronic component characterized by comprising a method of manufacturing a substrate growth graphene.

In one embodiment of the present invention, the present invention comprises an electronic component characterized in that it comprises a substrate growth graphene.

In one embodiment of the present invention, the electronic component is a transistor; But is not limited thereto.

In one embodiment of the present invention, a transistor means a transistor including a graphen transistor.

In one embodiment of the present invention, the electronic component is a central processing unit (CPU); .

In one embodiment of the present invention, the electronic component is a memory; .

''

Substrate growth graphene manufacturing equipment

In one embodiment of the present invention, the present invention provides a gas supply system comprising a gas supply unit for supplying a carbon-containing gas and an etching gas, a gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit, And a metal layer disposed in contact with the ejected carbon-containing gas and the etching gas, and a metal layer in contact with the ejected carbon-containing gas and the etching gas. And a heating device.

In one embodiment of the present invention, the present invention relates to a gas supply system for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to locally heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; And a substrate grafting step for grafting the substrate.

In one embodiment of the present invention, the present invention relates to a gas supply system for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; And a substrate grafting step for grafting the substrate.

In one embodiment of the present invention, the apparatus further comprises a gas flow regulator (gas supply regulator) connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout, Thereby providing a manufacturing apparatus.

In one embodiment of the present invention, the carbon-containing gas and the etching gas further comprise hydrogen gas.

In one embodiment of the present invention, the carbon-containing gas and the etching gas further comprise an inert gas and a hydrogen gas.

In one embodiment of the present invention, the gas ejection portion is characterized by having a storage portion in which the carbon-containing gas and the etching gas are accommodated, and a nozzle portion for ejecting the carbon-containing gas and the etching gas.

In one embodiment of the present invention, the gas ejector comprises a reservoir in which the carbon-containing gas and the etching gas are contained, and a piezo injection system for ejecting the carbon-containing gas and the etching gas.

In one embodiment of the present invention, the gas ejection portion is characterized by comprising a storage portion in which the carbon-containing gas and the etching gas are accommodated, and a solenoid injection system for ejecting the carbon-containing gas and the etching gas.

In one embodiment of the present invention, the gas ejector comprises a reservoir in which a carbon-containing gas and an etchant gas are received, a heating portion for heating the carbon-containing gas and the etching gas to a predetermined temperature, And a piezo injecting system for injecting the fluid.

In one embodiment of the present invention, the gas ejector comprises a reservoir in which a carbon-containing gas and an etchant gas are received, a heating portion for heating the carbon-containing gas and the etching gas to a predetermined temperature, And a solenoid injection system for injecting the air into the combustion chamber.

In one embodiment of the present invention, the gas ejecting portion is provided in a form including a region corresponding to a region of the substrate having the metal layer.

In one embodiment of the present invention, the heating device is provided in a form including a region corresponding to a region of the substrate having the metal layer.

In one embodiment of the present invention, the heating device is provided in the same space as the gas ejecting portion.

In one embodiment of the present invention, the heating device may be characterized by having a halogen lamp, but it is not limited to heating to a certain temperature (for example, 1000 DEG C).

In one embodiment of the present invention, the substrate growth graphene fabrication apparatus comprises (1). Gas spouting part, (2). A substrate comprising a metal layer, (3). (1) to (3), which are constituted by a heating device and a heating device.

In one embodiment of the present invention, the outer periphery of the substrate growth graphene production apparatus is characterized by having an exhaust device.

In one embodiment of the present invention, the exhaust system can be used to easily evacuate gas remaining inside the exterior of the substrate growth graphene production apparatus to prevent incorporation of impurity gases in the production of substrate growth graphene.

In one embodiment of the present invention, the exhaust system can be used to form a flow of carbon-containing gas and etching gas in the manufacture of substrate growth graphene.

In one embodiment of the present invention, the outer periphery of the substrate growth graphene manufacturing apparatus is connected to a positioning process selected from a load-locked chamber positioning process, a roll-to-roll positioning process, do.

In one embodiment of the present invention, the outer periphery of the substrate growth graphene fabrication apparatus is characterized in that it is connected to a method of positioning selected among an atmospheric pressure wafer transfer system, a vacuum wafer transfer system, and the like.

In one embodiment of the present invention, the gas spouting unit comprises (1). Top and bottom, (2). Left and right, (3). (1), (2), (3), (3), and (3). In this case, the direction in which the substrate having the metal layer is inserted into the substrate growing graphene producing apparatus and taken out is defined as the forward direction.

In one embodiment of the present invention, a substrate growth graphene manufacturing apparatus comprises a substrate having a metal layer disposed therein. Top and bottom, (2). Left and right, (3). Back and forth, (4). (1), (2), (3), (4), and (4). In this case, the direction in which the substrate having the metal layer is inserted into the substrate growing graphene producing apparatus and taken out is defined as the forward direction.

In one embodiment of the present invention, the gas ejection portion ejects a gas while moving in a moving direction selected from at least one of an upper, a lower, a left, a right, a front, and a back; .

In one embodiment of the present invention, the substrate growth graphene fabrication apparatus includes a substrate having a metal layer disposed therein, the substrate being formed of at least one selected from top, bottom, left, right, front, back, Adjusting the position; .

In one embodiment of the present invention, in constructing the gas ejecting portion that ejects gas while moving in the moving direction in which at least one of the upper, lower, left, right, front, and rear is selected, It is preferable to constitute a positioning apparatus.

In one embodiment of the present invention, the substrate growth graphene fabrication apparatus includes a substrate having a metal layer disposed therein, the substrate being formed of at least one selected from top, bottom, left, right, front, back, In order to adjust the position, it is preferable to use a positioning device using a servo motor.

In one embodiment of the present invention,

Providing a metal layer on a substrate; And

Supplying and discharging a carbon-containing gas and an etching gas; And

Performing atmospheric pressure chemical vapor deposition (APCVD); And

And performing atmospheric pressure chemical vapor deposition (APCVD) on the surface of the substrate, wherein the etching gas is used to continuously remove all of the metal from the metal layer, thereby growing graphene on the substrate without the metal layer ; To

The method of manufacturing a substrate growth grapnn comprises the steps of:

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas and an etching gas; And

Performing atmospheric pressure chemical vapor deposition (APCVD); And

And performing atmospheric pressure chemical vapor deposition (APCVD) on the surface of the substrate, wherein the etching gas is used to continuously remove all of the metal from the metal layer, thereby growing graphene on the substrate without the metal layer ; , &Lt; / RTI &

Wherein the steps are controlled by a controller of a substrate growth graphene production apparatus.

In one embodiment of the present invention, the controller of the substrate growth graphene production apparatus may be provided in the form of a computer, but is not limited thereto.

In one embodiment of the present invention, the control device of the substrate growth graphene production apparatus may be basically adopted as a wire connection with the substrate growth graphene production apparatus, but the present invention is not limited thereto, and may be wired and / .

In one embodiment of the present invention, the step of performing Atmospheric Pressure Chemical Vapor Deposition (APCVD) is characterized in that the substrate having the metal layer (catalyst layer) and / or the gas ejection portion are carried out while moving.

In one embodiment of the present invention, the substrate growth graphene fabrication apparatus further comprises a cooling section for cooling the area of the substrate growth graphene.

In one embodiment of the present invention, the cooling section is characterized in that the grains are slowly cooled at a constant rate so that the graphenes can uniformly grow and be uniformly arranged.

In one embodiment of the present invention, the cooling section is characterized in that after the APCVD process, the cooling process is performed on the formed graphene.

In one embodiment of the present invention, the substrate growth graphene fabrication device is characterized in that it is included in a process platform that facilitates the fabrication of a functional device that exhibits enhanced reliability with respect to a semiconductor material-based device.

In one embodiment of the present invention, the substrate growth graphene fabrication apparatus is a process platform that facilitates fabrication of functional devices that exhibit enhanced reliability with respect to semiconductor material-based devices produced by "bottom-up & Is included.

In one embodiment of the present invention, the control device of the substrate growth graphene fabrication device may be included in a control device of the process platform that facilitates the fabrication of a functional device exhibiting enhanced reliability with respect to the semiconductor material based device. In one embodiment of the present invention, the above description may mean that the process manager is a system that performs overall equipment control of the process platform in one place.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas, an etching gas and a hydrogen gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas, an etching gas, a hydrogen gas and an inert gas.

In one embodiment of the present invention, the gas ejection unit may be characterized in that the carbon-containing gas and the etching gas are supplied, and the carbon-containing gas is heated to a predetermined temperature so that the activated carbon can be easily formed.

In one embodiment of the present invention, the gas ejecting portion may be characterized by ejecting the carbon-containing gas and the etching gas by heating them to a predetermined temperature.

In one embodiment of the present invention, the gas ejection portion is connected to the gas supply portion by a gas connection pipe.

In one embodiment of the present invention, the gas supply regulator can easily control the amount of gas supplied from the gas supply to the gas spout.

In one embodiment of the present invention, the gas supply regulator includes a solenoid valve to easily control the amount of gas supplied to the gas ejection portion.

In one embodiment of the present invention, the proposed solenoid refers to an electronic solenoid.

In one embodiment of the present invention, the presented solenoid refers to an electronically controlled solenoid.

In one embodiment of the present invention, the gas supply regulator includes a pressure control valve to easily control the amount of gas supplied to the gas ejection portion. Here, the pressure control valve means a valve that maintains a constant pressure in the gas connection pipe, controls the maximum pressure, or regulates the pressure of the gas supplied to the gas ejection portion.

In one embodiment of the present invention, the gas supply regulator includes a flow control valve to easily control the amount of gas supplied to the gas ejection portion. Here, the flow control valve means a valve for controlling the flow rate of the gas.

In one embodiment of the present invention, the gas supply regulator can control the degree of formation of graphene by appropriately adjusting important factors such as the supply pressure of the etching gas and the carbon-containing gas, the supply range, the supply amount, and the like.

In one embodiment of the present invention, the gas ejector includes a nozzle module, and the nozzle module may be provided with a nozzle module having a solenoid.

In one embodiment of the present invention, the gas ejector may comprise a solenoid ejection system. In one embodiment of the present invention, the solenoid injection system may be provided with a injection system having a solenoid. Alternatively, in one embodiment of the present invention, the solenoid injection system may be provided with a nozzle module having a solenoid.

In one embodiment of the present invention, the nozzle module with a solenoid is an apparatus that instantaneously injects gas into the substrate growth graphene fabrication apparatus, which comprises a very small hole and a device for opening and closing it .

In one embodiment of the present invention, a nozzle module with a solenoid is an apparatus for instantaneously ejecting gas into the substrate growth graphene production apparatus, which comprises a very small hole, a device for opening and closing it, and a needle Can be characterized.

In one embodiment of the present invention, the solenoid injection system is controlled by a controller of the substrate growth graphene production apparatus.

In one embodiment of the present invention, the arrangement of the solenoid injection system may basically adopt a grid-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the arrangement of the solenoid injection system may basically adopt a matrix-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the solenoid injection system controls the injection amount of the carbon-containing gas.

In one embodiment of the present invention, the solenoid injection system controls the injection amount of the etching gas.

In one embodiment of the present invention, the solenoid injection system controls the injection amount of the carbon-containing gas and the injection amount of the etching gas.

In one embodiment of the present invention, the solenoid injection system has the following operation sequence. (One). Voltage application (current connection), (2). Solenoid valve module operation, (3). Piston module operation, (4). Needle opening, (5). (1) to (5), which consist of gas injection, and the like.

In one embodiment of the present invention, the solenoid injection system has the following operation sequence. (One). Voltage interruption (current interruption), (2). Solenoid valve module stop, (3). Piston module stop, (4). Needle closure, (5). (1) to (5) in which the gas injection stop is performed.

In one embodiment of the present invention, the solenoid refers to a device that includes a configuration that moves the plunger within the coil when the current is applied to the coil and has mechanical motion.

In one embodiment of the present invention, a solenoid refers to a module that includes a configuration that moves the plunger within the coil when the current is applied to the coil, and has mechanical motion.

In one embodiment of the present invention, the solenoid injection system senses a change in gas due to repetitive injection and enables precise injection control taking into account the difference. This precise injection control detects the change of the gas due to the repetitive injection of the solenoid injection system and makes a determination after analysis in the control apparatus of the substrate growth graphene manufacturing apparatus, It can be said to perform injection control.

In one embodiment of the present invention, detecting the change in gas may mean detecting a change in pressure of the gas ejected to the pressure measurement sensor in real time and / or intermittently.

In one embodiment of the present invention, the solenoid injection system can control the degree of formation of graphene by appropriately adjusting important factors such as the supply range of the etching gas and the carbon-containing gas, the supply amount, and the like.

In one embodiment of the present invention, the gas ejection portion includes a nozzle module, and the nozzle module may be provided with a nozzle module or a piezo nozzle module having a piezo actuator (for example, a piezo electric actuator).

In one embodiment of the present invention, a piezo actuator (e.g., a piezoelectrical actuator) includes a piezo ceramic layer and an electrode layer, wherein the piezo ceramic layer and the electrode layer are arranged such that one layer is on top of one layer, And are arranged in such a manner as to be aligned with each other.

In one embodiment of the present invention, the piezo actuator (e.g., piezo electric actuator) may be characterized as comprising a piezo crystal material, but is not limited in that it is a piezo material.

In one embodiment of the present invention, the gas ejection portion may comprise a piezo injection system. In one embodiment of the present invention, the piezo injection system may include a propulsion system having a piezo actuator (e.g., piezo electric actuator). Alternatively, in one embodiment of the present invention, the piezo injection system may be provided with a nozzle module or piezo nozzle module having a piezo actuator (e.g., piezo electric actuator).

In one embodiment of the present invention, since the piezo injection system can control the operation time to be not more than 100 microseconds, the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- .

In one embodiment of the present invention, since the piezo injection system can control the operation time to be not more than 100 microseconds in injection time, the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer useful.

In one embodiment of the present invention, since the piezo injection system can control the operation time to be not more than 100 microseconds, the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- , And is useful for making the concentration distribution in the direction parallel to the surface of the substrate uneven among the concentration distribution of the etching gas in the metal layer.

In one embodiment of the present invention, the piezo injection system can precisely control the injection timing by reducing the time of injection compared to conventional nozzle systems, and significantly less noise and vibration than conventional nozzle systems.

In one embodiment of the present invention, the piezo injection system senses changes in gas due to repetitive injection and allows precise injection control taking into account the differences. This precise injection control detects the change of the gas due to repetitive injection of the piezo injection system and makes a determination after analysis in the control apparatus of the substrate growth graphene manufacturing apparatus, It can be said to perform injection control.

In one embodiment of the present invention, detecting the change in gas may mean detecting a change in pressure of the gas ejected to the pressure measurement sensor in real time and / or intermittently.

In one embodiment of the present invention, the piezo injection system has the following sequence of operations. (One). Electric charging (or application of voltage), (2). Piezo actuator operation, (3). Hydraulic coupler hydraulic pressure increase, (4). Pressure control valve open, (5). Needle opening, (6). (1) to (6), which consist of gas injection, and gas injection.

In one embodiment of the present invention, the piezo injection system has the following sequence of operations. (One). Electric discharge (or interruption of voltage), (2). Piezo actuator stop, (3). Hydraulic coupler hydraulic pressure reduction, (4). Pressure control valve closed, (5). Needle closure, (6). (1) to (6) in which the gas injection is stopped.

In one embodiment of the present invention, the arrangement of the piezo injection system can basically adopt a grid-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the arrangement of the piezo injection system may, but is not limited to, essentially adopt a matrix-like arrangement.

In one embodiment of the present invention, the piezo injection system is controlled by a controller of the substrate growth graphene production apparatus.

In one embodiment of the present invention, the piezo injection system controls the injection amount of the carbon-containing gas.

In one embodiment of the present invention, the piezo injection system controls the injection amount of the etching gas.

In one embodiment of the present invention, the piezo injection system adjusts the injection amount of the carbon-containing gas and the injection amount of the etching gas.

In one embodiment of the present invention, the piezo injection system can control the degree of graphene formation by appropriately adjusting the critical components of the etch gas and the carbon-containing gas supply range, feed rate, and the like.

In one embodiment of the present invention, the substrate growth graphene production apparatus may further comprise various detection devices. Such an example may include an apparatus for detecting and / or discriminating the state of a substrate provided with a substrate growth graphene having a photo-detecting device.

In one embodiment of the present invention, the substrate growth graphene fabrication apparatus is capable of transferring the wafer or substrate from the storage device, without bringing the device or apparatus for exporting the wafer or substrate from the storage device into and out of the storage device in detail And a mechanism (device) for carrying out the process to a storage device are provided in the substrate growth graphene production apparatus are well known to those skilled in the art and therefore may not be described in detail in the present invention. Here, the storage device may refer to a storage device in which a wafer or a substrate is stored and transferred to the wafer transfer system.

In one embodiment of the present invention, the substrate growth graphene manufacturing apparatus is not described or illustrated in detail in terms of a mechanism (device) for bringing the wafer or substrate into and out of the substrate growth graphene manufacturing apparatus It is well known to a person skilled in the art that a mechanism for transferring the wafer or substrate into the substrate growing graphene producing apparatus and taking it out of the substrate growing graphening apparatus is provided in the substrate growing graphening apparatus, It may not be described in detail.

In one embodiment of the present invention, the substrate growth graphene fabrication apparatus may additionally include a plurality of devices, but it may also include a metal layer, basically comprising a metal layer, supplying an etch gas and a carbon-containing gas and maintaining atmospheric pressure chemical vapor deposition (APCVD) And removing the metal layer with an etching gas while growing the graphene on the substrate without the metal layer.

''

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to locally heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; To

And a substrate graphene producing apparatus.

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas and an etching gas;

A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;

A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And

A heating device arranged to heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; To

And a substrate graphene producing apparatus.

In one embodiment of the present invention, the heating device may be composed of a main heating device and a sub-heating device.

In one embodiment of the present invention, the heating device may refer to a plurality of heating devices that heat to a temperature for performing Atmospheric Pressure Chemical Vapor Deposition (APCVD).

In one embodiment of the present invention,

Further comprising a gas supply regulator connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout; And a substrate graphene producing apparatus.

In one embodiment of the present invention, the gas supply regulator may be characterized as comprising a solenoid valve.

In one embodiment of the present invention, the gas-

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A nozzle portion for ejecting a carbon-containing gas and an etching gas; .

In one embodiment of the present invention, the gas-

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A piezo-jet system for ejecting carbon-containing gas and etch gas; .

In one embodiment of the present invention, the gas-

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A solenoid injection system for ejecting carbon-containing gas and etching gas; .

In one embodiment of the present invention, the gas-

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

A piezo-jet system for ejecting carbon-containing gas and etch gas; .

In one embodiment of the present invention, the gas-

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

A solenoid injection system for ejecting carbon-containing gas and etching gas; .

In one embodiment of the present invention, the heating unit provided in the gas spouting unit may be characterized in that the carbon-containing gas is heated to a predetermined temperature so that the activated carbon can be easily formed.

In one embodiment of the present invention, the heating portion provided in the gas ejecting portion may be characterized by heating the carbon-containing gas and the etching gas to a predetermined temperature.

In one embodiment of the present invention, the heating unit provided in the gas spouting unit may include a heating wire, but the present invention is not limited thereto.

In one embodiment of the present invention, the heating section provided in the gas ejection section is controlled by a control device of the substrate growth graphene production apparatus; .

In one embodiment of the present invention, the gas-

And a region corresponding to a region of the substrate having the metal layer; .

In one embodiment of the present invention,

And a region corresponding to a region of the substrate having the metal layer; .

In one embodiment of the present invention, the heating device is provided in the same space as the gas ejecting portion; .

In one embodiment of the present invention, the gas ejector is configured to eject gas while moving; .

In one embodiment of the present invention,

Adjusting the position of the substrate comprising the metal layer; And a substrate graphene producing apparatus.

In one embodiment of the present invention,

Further comprising a cooling unit for slowly cooling the substrate growth graphene at a constant speed so that the graphenes can uniformly grow and be uniformly arranged; And a substrate graphene producing apparatus.

In one embodiment of the present invention, the design comprises a substrate growth graphene fabrication apparatus; And a process platform.

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

Including solenoid injection systems; And a gas discharge portion.

In one embodiment of the present invention,

The solenoid injection system

The concentration distribution of the carbon-containing gas in the metal layer in the direction parallel to the surface of the substrate is uneven; .

In one embodiment of the present invention,

The solenoid injection system

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

The solenoid injection system

Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

The solenoid injection system being controlled by a controller of the substrate growth graphene production apparatus; .

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

Comprising a piezo injection system with a piezo electric actuator; And a gas discharge portion.

In one embodiment of the present invention,

Piezoelectric actuators

A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; .

In one embodiment of the present invention,

The piezo injection system being controlled by a controller of the substrate growth graphene production apparatus; .

In one embodiment of the present invention,

The piezo injection system

The concentration distribution of the carbon-containing gas in the metal layer in the direction parallel to the surface of the substrate is uneven; .

In one embodiment of the present invention,

The piezo injection system

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

The piezo injection system

Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

In one embodiment of the present invention,

A gas ejection portion, and

A substrate having a metal layer, and

Having a substrate growth graphene manufacturing apparatus exterior portion accommodating a heating device; And a substrate graphene producing apparatus.

In one embodiment of the present invention,

Wherein the outer surface of the substrate growing graphene production apparatus is provided with an exhaust device; .

In one embodiment of the present invention,

Substrate growth The graphene fabrication device exterior

Linked to a method of positioning selected from a load-locked chamber positioning process, a roll-to-roll positioning process, or the like; .

In one embodiment of the present invention, the load-locked chamber may mean a dual load-locked chamber.

In one embodiment of the present invention,

Substrate growth The graphene fabrication device exterior

Connected to atmospheric pressure wafer transfer system, vacuum wafer transfer system, selected locating process method; .

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas and an etching gas; And

Performing atmospheric pressure chemical vapor deposition (APCVD); And

And performing atmospheric pressure chemical vapor deposition (APCVD) on the surface of the substrate, wherein the etching gas is used to continuously remove all of the metal from the metal layer, thereby growing graphene on the substrate without the metal layer ; , &Lt; / RTI &

Said steps being controlled by a controller of a substrate growth graphene production apparatus; The method comprising the steps of:

In one embodiment of the present invention,

A storage portion in which the carbon-containing gas and the etching gas are accommodated, and

A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and

A solenoid injection system for ejecting carbon-containing gas and etching gas; And a gas discharge portion.

In one embodiment of the present invention, the solenoid injection system

Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,

The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; .

''

Here, "to be described" means "to be enumerated or described and described as it is with the contents and features of the object or process".

This design is described as the upper group, the group, the scope of the group, the sub-scope of the group, and the scope of the group.

The advantages and features of the present invention, and how to accomplish them, will become apparent with reference to the embodiments detailed in detail. However, the present invention is not limited to the embodiments described in detail, but may be embodied in various forms.

Generally known methods, generally known devices, generally known materials, and generally known techniques, rather than those specifically described in the present invention, may be applied to embodiments of the present invention that are broadly disclosed without resorting to unnecessary experimentation. The methods, devices, materials, sequences, and particularly techniques known in the art, as described herein, can be applied to embodiments of the present invention without intending to be so.

Those of ordinary skill in the art will appreciate that the present invention is feasible without resorting to overexploitation.

The terms and expressions employed herein are used as terms of a detailed description of the inventive concept, and are not intended to limit the meaning or limitations of the terms or expressions of the described or illustrated features. However, various modifications are possible within the scope of the present invention. It is therefore to be understood that, although the subject matter has been described by way of some preferred embodiments, it is to be understood that the exemplary embodiments and optional features, modifications and variations of the concepts described herein may be reclassified by conventional techniques and the like, May be considered within the scope of the present invention as defined by the appended claims.

It is apparent that the specific embodiments provided herein are illustrative of useful embodiments of the present invention and that the present invention may be practiced using many variations of the devices, components, and method steps.

Useful embodiments of the present invention presented herein may include various optional configurations and methods and steps.

Here, when a higher group is described, individual members that can be included in the higher group and combinations of lower groups that can be included in the higher group are feasible within the described range of the higher group. Thus, when a parent group is described herein, it should be understood that it includes the possible subgroup combinations and individual members of the group. Also, when a parent group is described, it should be understood that the individual members that can be included in the parent group and the combination of the child groups that can be included in the parent group are included in the described range of the parent group.

Additionally, where no other description is required, it is understood that in one embodiment of the present invention, a variant of the presented material is intended to encompass a variant of the applicant not intended to be an important combination claimed herein.

In one embodiment of the present invention, what is described in the singular can mean plural.

In one embodiment of the present invention, when a manufacturing process is presented, the manufacturing process may refer to a manufacturing process that is performed more than once.

The specific designations of the materials or components of the components described or illustrated herein are to be construed as exemplary of the invention insofar as those skilled in the art will be able to designate the specific names of the materials or components of the same component Can be called. Accordingly, the specific names of the materials or components of the components described or described herein should be understood based on the overall contents of the described technique.

Combinations of groups described or described herein may be used to carry out the present design, unless otherwise stated.

Combinations of groups described or described herein that may be included in a higher group may be used to carry out the present design, unless otherwise stated.

The individual values that may be included in the ranges of the groups described or described above as well as when the ranges of the groups described or described herein are given are intended to be included within the scope of the above described or described group.

Combinations of groups that may be included in the ranges of the groups described or described above as well as when the ranges of the groups described or illustrated herein are given are intended to be included within the scope of the groups described or illustrated above.

In one embodiment of the present invention, equivalently known components or synthetic combinations or compounds of the components described or described may be used to carry out the present invention without intention or inadvertent disclosure.

It will be appreciated that the scope of the description of the groups described herein may not appear in the claims herein.

It will be understood that the groups described herein may not appear in the claimed claims herein.

In one embodiment of the present invention, the contents of this invention have been described at the level of those skilled in the art to which this invention belongs.

In one embodiment of the present invention, the present invention, which is described in terms of groups, ranges of groups, sub-ranges of groups, and ranges of groups, can be realized within the scope of the description of the upper group of the present invention.

Those of ordinary skill in the art to which this invention belongs will recognize that various ways of practicing the present invention may be employed in the practice of the present invention without resort to undue experimentation.

Those skilled in the art will also appreciate that descriptions of groups, groups, sub-ranges, and groups of sub-ranges may be employed in the implementation of a higher group of the invention You can see that it is.

Although the present invention has been described in detail, the present invention is not limited to the above description, and various modifications may be made. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

Also, the present invention, which is appropriately and diagrammatically illustrated, may be implemented in the absence of any elements or components, limitations or limitations not specifically described.

It is also to be understood that the present invention, which is appropriately and diagrammatically illustrated, is merely illustrative and that those skilled in the art will readily appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention . Accordingly, the true scope of technical protection of the present invention should be determined by the technical idea of the appended utility model registration claim scope.

In one embodiment of the present invention, any materials and methods known equivalently to the materials and methods described in this specification may be included in an embodiment of the present invention by way of illustration and not of limitation.

100: substrate
200: metal layer
300: Carbon-containing gas
310: Etching gas of metal
500: Grain Pins
1001: Graphene device
1002: Graphene
1003: substrate
1004: grain boundary
1500: Grain growth direction
1600: Etching gas introduction direction
2000: Line graphene
2001: Surface graphene
3001: Slit mask
3002: slit
3005: metal direction supplied by sputtering
5000B, 5100A, 5100B, 5100C: substrate growth graphene manufacturing apparatus
5010, 5110: Substrate growth Graphene manufacturing device Outer part
5020, 5120: gas supply part
5021, 5022, 5023, 5121, 5122, 5123: gas supply device
5030, 5131, 5132: gas supply regulator
5041, 5042, 5141, 5142, 5143, 5144:
5051, 5052, 5151, 5152: main heating device
5060, 5160: a substrate on which a catalyst layer (metal layer)
5070, 5170: substrate growth graphene
5080, 5180, 5181: Exhaust system
5090, 5190: Control device of substrate growth graphene manufacturing equipment
5095, 5195, 5196: Sub-heating device
5098, 5099: Rollers
5197: wafer (substrate) vacuum transfer system
5198: Wafer (substrate) transport system
6100A, 6100B, 6200A, 6200B: piezo injection system
6110, 6210: Piezoelectric actuator module
6120, 6220: accumulator
6130: Needle operation amplifier
6140: Needle
6250: Coupling module
6260: Control valve module
6270: Nozzle module
7100A, 7100B: Solenoid injection system
7110: Solenoid module (or solenoid valve module)
7120: accumulator
7130: Piston module
7140: Needle

Claims (58)

a. Providing a metal layer on the substrate Thereafter,
b. An etching gas and a carbon-containing gas are supplied and atmospheric pressure chemical vapor deposition (APCVD) is performed,
c. Supplying a carbon-containing gas in the etching gas supply, growing graphene on the metal layer,
d. In the step c), continuous atmospheric pressure chemical vapor deposition (APCVD) is performed, and the metal of the metal layer is entirely and continuously removed by the etching gas, Growing graphene; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the metal layer is made non-uniform,
Controlling the starting point and direction of growth of graphene to realize a large crystal of graphene; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
The etching gas supply
The concentration distribution of the etching gas in the metal layer is made non-uniform,
Controlling the starting point and direction of growth of graphene to realize a large crystal of graphene; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
Wherein the metal layer has a slope in the thickness of the metal layer,
The etching gas is supplied in such a manner that the metal is rapidly removed by raising the concentration of the etching gas at a high portion of the metal layer and the concentration of the etching gas is low at the low portion of the metal layer,
The lower part of the metal layer becomes the starting position of the growth of graphene; of
Characterized by a method for producing a substrate grown graphene The method of claim 4,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing substrate growth graphene by feature
The method according to claim 1,
Wherein the metal layer has a slope in the thickness of the metal layer,
The carbon-containing gas supply is configured such that the concentration of the carbon-containing gas is high at the upper portion of the metal layer, the concentration of the carbon-containing gas at the lower portion of the metal layer is high,
The etching gas is supplied in such a manner that the metal is rapidly removed by raising the concentration of the etching gas at a high portion of the metal layer and the concentration of the etching gas is low at the low portion of the metal layer,
The lower part of the metal layer becomes the starting position of the growth of graphene; of
Characterized by a method for producing a substrate grown graphene The method of claim 6,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing substrate growth graphene by feature
The method according to claim 1,
Wherein the carbon-containing gas supply causes grains to grow in a direction parallel to the surface of the substrate as the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- that; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
Wherein the etching gas supply is performed by growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer is made non-uniform; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
Wherein the carbon-containing gas supply causes a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the metal layer to be uneven,
The etching gas supply causes a concentration distribution in a direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer to be uneven,
Growing graphene in a direction parallel to the surface of the substrate; of
Characterized by a method for producing a substrate grown graphene
The method according to claim 1,
The metal of the metal layer is iron, nickel, cobalt, or an alloy containing them,
The etching gas is chlorine; of
Characterized by a method for producing a substrate grown graphene a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the APCVD chamber using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And
b. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And
c. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And
c. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene a. Loading a substrate into a deposition chamber to form a metal layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the metal layer formed on the substrate; And
c. Selectively etching the metal layer formed on the substrate by sequentially loading the substrate into the chambers for performing selective etching; And
d. Loading the substrate into an APCVD chamber, supplying the etch gas and carbon-containing gas and forming substrate growth graphene by APCVD; , &Lt; / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; of
Characterized by a method for producing a substrate grown graphene The method according to claim 1,
Further comprising cooling the grown graphene on the substrate; of
Characterized by a method for producing a substrate grown graphene
a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;
c. Constituting a concentration distribution of the carbon-containing gas in the metal layer uniformly, and
d. Performing APCVD, and
e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And
f. Continuing etching with APCVD maintained, growing carbon so as to form a crystal structure with already grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method of manufacturing a substrate growth graphene
a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. Forming a metal layer on the upper portion of the metal layer so as to increase the concentration of the etching gas so as to rapidly remove the metal layer and lower the concentration of the etching gas in the metal layer;
c. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and
d. Performing APCVD, and
e. With rapid removal of the metal, the carbon that can not grow on the rapidly removed metal maintains high mobility, where the concentration of the etching gas is low, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And
f. Continuing etching with APCVD maintained, growing carbon so as to form a crystal structure with already grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method of manufacturing a substrate growth graphene a. Forming a metal layer on the substrate such that the shape of the metal layer formed on the substrate is inclined to the thickness of the metal layer;
b. So that the etching gas is uniformly injected to uniformly remove the metal layer, and
c. Increasing the concentration of the carbon-containing gas in the lower portion of the metal layer in the metal layer, and
d. Performing APCVD, and
e. With the removal of the metal, the carbon that can not grow on the metal to be removed remains in high mobility, where the concentration of the carbon-containing gas is high, i.e., the low point of the metal layer becomes the starting position of the growth of graphene, And
f. Continuing etching with APCVD maintained, growing carbon so as to form a crystal structure with already grown graphene, and
g. The growth direction of graphene is a step in which graphen grows from a low place to a high place in the metal layer, and
h. Finally removing all of the metal layer and bringing the graphene directly into contact with the surface of the substrate; To
A method of manufacturing a substrate growth graphene The method according to any one of claims 17 to 19,
Wherein the metal layer has a shape in which a first region extending in parallel to the surface of the substrate and a second region extending in parallel to the surface of the substrate are in contact with the bend, The second region being sloped with respect to the thickness of the metal layer so that the thickness of the metal layer becomes thicker when the second region is away from the bend; of
Method of manufacturing substrate growth graphene by feature A linear graphene growing in a first direction parallel to the surface of the substrate and directly in contact with the surface is produced by the method for producing a substrate growth graft according to claim 8,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method for producing a substrate growth graphene according to claim 8; of
Characterized by a method for producing a substrate grown graphene Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface are produced by the method for producing a substrate growth graft according to claim 9,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method of manufacturing the substrate growth graphenes according to claim 9; of
Characterized by a method for producing a substrate grown graphene A linear graphene growing in a first direction parallel to the surface of the substrate and in direct contact with the surface is produced by the method for producing a substrate growth graft according to claim 10,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method for producing a substrate growth graphene according to claim 10; of
Characterized by a method for producing a substrate grown graphene The method according to any one of claims 21 to 23,
Cooling the line graphene, and
Further comprising cooling said planar graphene; of
Characterized by a method for producing a substrate grown graphene
With substrate growth graphene,
Wherein the substrate growth graphene directly contacts the surface of the substrate,
The crystal grain size in the first direction parallel to the surface of the substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the substrate growth graphene,
The grain size of the grains in the first direction of the substrate growth grains is larger than that in a direction perpendicular to the surface of the grains; of
A substrate growth graphene characterized
With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a grain boundary along a first direction parallel to the surface,
Wherein the substrate growth graphene has a grain boundary along a second direction parallel to the surface,
The substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; of
A substrate growth graphene characterized
26. The method of claim 26,
The first direction and the second direction being orthogonal; of
A substrate growth graphene characterized
With substrate growth graphene,
The substrate growth graphene directly contacts the surface of the substrate,
Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a first direction parallel to the surface,
Wherein the substrate growth graphene has a plurality of crystal grain boundaries along a second direction parallel to the surface,
The substrate growth graphene is a single crystal in each of the regions surrounded by the crystal grain boundaries; of
A substrate growth graphene characterized
29. The method of claim 28,
Wherein the first direction and the second direction are orthogonal to each other,
The interval of the grain boundaries along the first direction is constant,
The intervals of the grain boundaries along the second direction are constant; of
A substrate growth graphene characterized
A method of manufacturing an electronic component characterized by comprising a method for manufacturing a substrate growth graphene according to claim 1, claim 17, claim 18, claim 19, claim 21, claim 22 or claim 23 A method of manufacturing an electronic component, comprising the method of manufacturing a substrate growth graphene according to claim 1, claim 17, claim 18, claim 19, claim 21, claim 22 or claim 23 An electronic component Characterized in that it comprises a substrate growth graphene according to claim 25, claim 26 or claim 28
A gas supply unit for supplying a carbon-containing gas and an etching gas;
A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;
A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And
A heating device arranged to locally heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; To
The substrate grafting apparatus of claim 1,
A gas supply unit for supplying a carbon-containing gas and an etching gas;
A gas spouting unit for supplying and discharging the carbon-containing gas and the etching gas from the gas supply unit;
A substrate provided with a carbon-containing gas ejected from the gas ejection portion and a metal layer disposed in contact with the etching gas; And
A heating device arranged to heat a region of the substrate having a metal layer in contact with the ejected carbon-containing gas and the etching gas; To
The substrate grafting apparatus of claim 1,
37. The method of any one of claims 33-34,
Further comprising a gas supply regulator connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A nozzle portion for ejecting a carbon-containing gas and an etching gas; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A piezo-jet system for ejecting carbon-containing gas and etch gas; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and
A piezo-jet system for ejecting carbon-containing gas and etch gas; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
And a region corresponding to a region of the substrate having the metal layer; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The heating device
And a region corresponding to a region of the substrate having the metal layer; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The heating device
Provided in the same space as the gas ejection portion; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
The gas-
Jetting gas while moving; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
Adjusting the position of the substrate comprising the metal layer; of
Characterized in that the substrate growing graphene device
37. The method of any one of claims 33-34,
Further comprising a cooling unit for slowly cooling the substrate growth graphene at a constant speed so that the graphenes can uniformly grow and be uniformly arranged; of
Characterized in that the substrate growing graphene device
Comprising a substrate growth graphene production apparatus according to any one of claims 33 to 34; of
Characterized process platform
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and
Comprising a piezo injection system with a piezo electric actuator; of
The gas-
47. The method of claim 46,
The piezo electric actuator
A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; of
The gas-
47. The method of claim 46,
The piezo injection system
Controlled by a controller of the substrate growth graphene production apparatus; of
The gas-
47. The method of claim 46,
The piezo injection system
The concentration distribution of the carbon-containing gas in the metal layer in the direction parallel to the surface of the substrate is uneven; of
The gas-
47. The method of claim 46,
The piezo injection system
The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; of
The gas-
47. The method of claim 46,
The piezo injection system
Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,
The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; of
The gas-

A gas ejection portion, and
A substrate having a metal layer, and
Having a substrate growth graphene manufacturing apparatus exterior portion accommodating a heating device; of
Characterized in that the substrate growing graphene device
53. The method of claim 52,
Wherein the outer periphery of the substrate growth graphene fabrication apparatus comprises an exhaust device; of
Characterized in that the substrate growing graphene device
53. The method of claim 52,
The outer edge of the substrate growth graphene manufacturing apparatus
Linked to a method of positioning selected from a load-locked chamber positioning process, a roll-to-roll positioning process, or the like; of
Characterized in that the substrate growing graphene device
53. The method of claim 52,
The outer edge of the substrate growth graphene manufacturing apparatus
Connected to atmospheric pressure wafer transfer system, vacuum wafer transfer system, selected locating process method; of
Characterized in that the substrate growing graphene device
Supplying and discharging a carbon-containing gas and an etching gas; And
Performing atmospheric pressure chemical vapor deposition (APCVD); And
And performing atmospheric pressure chemical vapor deposition (APCVD) continuously, wherein the etching gas is used to continuously remove all of the metal in the metal layer, thereby growing graphene on the substrate without the metal layer ; , &Lt; / RTI &
Said steps being controlled by a controller of a substrate growth graphene production apparatus; of
Characterized by a method for producing a substrate grown graphene
A storage portion in which the carbon-containing gas and the etching gas are accommodated, and
A heating section for heating the carbon-containing gas and the etching gas to a predetermined temperature, and
A solenoid injection system for ejecting carbon-containing gas and etching gas; of
The gas-
65. The method of claim 57,
The solenoid injection system
Among the concentration distribution of the carbon-containing gas in the metal layer, the concentration distribution in the direction parallel to the surface of the substrate is made non-uniform,
The concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the etching gas in the metal layer; of
The gas-

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