KR20160083547A - Organic light emitting display device and method for fabricating the same - Google Patents

Abstract

The present invention relates to an organic light emitting display device including a moisture permeation preventing layer, which eliminates a mask process when forming the moisture permeation preventing layer so as to reduce manufacturing costs, and is easy to design a narrow bezel, and to a manufacturing method thereof. According to the present invention, the organic light emitting display device comprises: an thin film transistor array arranged in a display area on a substrate; an organic light emitting element provided on the thin film transistor array; a pad unit arranged in a non-display area of the substrate; and the moisture permeation preventing layer having a pad hole exposing the pad unit while covering the organic light emitting element at the same time.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light emitting display, and more particularly, to an organic light emitting display including a moisture permeation preventive film and a method of manufacturing the same.

Organic light emitting devices can be driven at a low voltage, are easy to be thinned, have a wide viewing angle, and have a fast response speed. Accordingly, an organic light emitting display device using an organic light emitting device has been widely applied to TVs, monitors, and mobile information devices.

1, the organic light emitting device includes a first electrode 10 and a second electrode 22, and a hole injection layer (not shown) provided between the first and second electrodes 10 and 22 a hole injection layer (HIL) 12, a hole transport layer (HTL) 14, an emission layer (EML) 16, an electron transport layer (ETL) , And an electron injection layer (EIL) 20. Such an organic light emitting device is driven as follows. That is, when positive and negative voltages are applied to the first and second electrodes 10 and 22, holes injected into the hole injection layer 12 are injected into the hole transport layer 14, And the electrons injected into the electron injection layer 20 are transported to the emission layer 16 through the electron transport layer 18. [ Then, the holes and electrons transported in the light emitting layer are coupled with each other to generate excitons, and the excitons transit from an excited state to a ground state to generate light.

However, the organic light emitting device is easily deteriorated when moisture and oxygen are introduced, and the lifetime of the organic light emitting device is deteriorated. Therefore, the conventional organic light emitting display device covers the organic light emitting element by using a moisture barrier layer to protect the organic light emitting element from moisture permeation and permeation. Forming a moisture barrier layer on the substrate; depositing an insulating layer on the entire surface of the substrate on which the organic light emitting diode is formed; removing only a region of the insulating layer deposited on the non- Thereby exposing the pad portion.

However, the process of forming the moisture barrier layer of the OLED display according to the related art has the following problems.

First, a lot of manufacturing cost is required by using the mask process.

Secondly, in the mask process, the shadow region is generated due to the angle between the evaporation source and the mask and the thickness of the mask in the mask process, and the thickness uniformity of the moisture permeation prevention film is lowered in the shadow region. Therefore, a margin in consideration of the shadow region is required in the non-display region of the substrate. Therefore, the prior art has a disadvantage in that the narrow bezel design for reducing the area of the non-display area is not easy.

SUMMARY OF THE INVENTION The present invention has been devised to solve the above-described problems, and it is an object of the present invention to provide an organic light emitting display device and a method of manufacturing the same that can reduce the manufacturing cost and simplify the design of the narrow bezel by forming a moisture- do.

Other features and advantages of the invention will be set forth in the description which follows, or may be obvious to those skilled in the art from the description and the claims.

According to an aspect of the present invention, there is provided an organic light emitting diode display comprising: a thin film transistor array disposed on a display region of a substrate; an organic light emitting diode disposed on the thin film transistor array; And a moisture barrier layer having a pad hole for covering the organic light emitting element and exposing the pad portion.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display, including forming a thin film transistor array on a substrate, forming an organic light emitting diode on the thin film transistor array, Forming a moisture barrier layer on the entire surface of the substrate including a device and a pad portion provided in a non-display region of the substrate; and forming a pad hole exposing the pad portion by selectively removing the moisture barrier layer using a laser process Step < / RTI >

According to the solution of the above-mentioned problems, the present invention has the following effects.

The present invention can reduce the manufacturing cost by eliminating the masking process when forming the moisture barrier layer. Further, as the mask process is eliminated, the margins of the non-display area can be reduced in consideration of the shadow area, so that the narrow bezel design is easy. Further, since the moisture barrier layer is formed to cover not only the organic light emitting element but also the entire surface of the non-display area except the pad part, the moisture permeation preventing effect is excellent, and the lifetime and reliability of the organic light emitting element can be improved.

In addition to the effects of the present invention mentioned above, other features and advantages of the present invention will be described below, or may be apparent to those skilled in the art from the description and the description.

FIG. 1 is a configuration diagram of a general organic light emitting device.
2 is a plan view schematically showing an organic light emitting diode display according to a first embodiment of the present invention.
3 is a cross-sectional view schematically illustrating an organic light emitting display according to a first embodiment of the present invention.
4 is a plan view showing a pad hole disposed in the integrated circuit bonding portion shown in FIG.
5 is a schematic plan view of the integrated circuit bonding portion shown in Fig.
FIG. 6 is a cross-sectional view illustrating the organic light emitting display shown in FIG. 2. Referring to FIG.
7A to 7E are views for explaining a method of manufacturing an organic light emitting display according to a first embodiment of the present invention.
8 is a view for explaining an optimal laser wavelength band for selective etching.
9 is a cross-sectional view illustrating an organic light emitting display according to a second embodiment of the present invention.
FIGS. 10A to 10F are views for explaining a method of manufacturing an organic light emitting display according to a second embodiment of the present invention.

The meaning of the terms described herein should be understood as follows. The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms. It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof. It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one. The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of the organic light emitting diode display and the method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

The driving circuit of the OLED display according to the present invention includes a data driving circuit for supplying a data voltage to the data lines DL of the display panel 100, And a gate driving circuit for supplying a signal. These driving circuits are integrated in the form of an integrated circuit (IC) and are connected to the non-display area NA of the display panel 100 by a TCP (Tape Carrier Package) method, a COF (Chip On Film) Can be bonded. In the following embodiments, it is assumed that the driver circuit is bonded to the display panel 100 in a COG (Chip on Glass) manner for convenience of explanation. However, the present invention is not limited to the COG method.

2 is a plan view schematically showing an organic light emitting diode display according to a first embodiment of the present invention. 3 is a cross-sectional view schematically illustrating an organic light emitting display according to a first embodiment of the present invention. 4 is a plan view showing a pad hole PDH disposed in the integrated circuit bonding portion 120 shown in FIG. 5 is a schematic plan view of the integrated circuit bonding portion 120 shown in FIG.

2 and 3, the OLED display according to the first embodiment of the present invention includes a display panel 100, a driving integrated circuit 110 and a flexible printed circuit 130). The display panel 100 is divided into a display area AA and a non-display area NA and the driving integrated circuit 110 and the flexible printed circuit 130 are bonded to the non-display area NA.

The display panel 100 includes a substrate SUB, a thin film transistor array 70 disposed in a display area AA on the substrate SUB, and an organic light emitting element 70 disposed on the thin film transistor array 70 And a pad portion PD disposed in a non-display area NA of the substrate SUB.

The thin film transistor array 70 includes a plurality of gate lines GL and a plurality of data lines DL and a plurality of gate lines GL and data lines DL arranged in a spaced- And a plurality of pixels P arranged in each of the regions defined by the intersections of the plurality of pixels DL. Each of the pixels P includes at least one thin film transistor and is connected to the gate line GL and the data line DL. The pixel P receives a data signal applied to the data line DL in response to a scan signal provided from the gate line GL, and displays an image corresponding to the data signal.

The organic light emitting diode OLED includes a first electrode, a second electrode, and an organic light emitting layer provided between the first and second electrodes. Here, the first electrode may be an anode electrode, and the second electrode may be a cathode electrode. The organic light emitting layer includes a hole injection layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injection layer. At least one selected from the group consisting of an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer may be omitted or a plurality of the organic emission layers may be provided. That is, the organic light emitting layer of the present invention can be applied to a stacked structure of all known organic light emitting devices (OLEDs).

The non-display area NA is provided with an integrated circuit bonding part 120 to which the driving integrated circuit 110 is bonded and a circuit film bonding part 132 to which the flexible printed circuit 130 is bonded, A plurality of pad portions PD are disposed in the bonding portion 120 and the circuit film bonding portion 132.

The driving integrated circuit 110 and the flexible printed circuit 130 are bonded to the pad portion PD by an ACF (Anisotropic Conductive Film) according to a TAB (Tape Automated Bonding) . The driving integrated circuit 110 may include driving circuits for driving the gate line GL and the data line DL of the thin film transistor array 70. [

The pad portion PD includes a pad electrode PE disposed on the same layer as the gate electrode or the data electrode of the thin film transistor array 70 and an upper transparent electrode TE contacting the front surface of the pad electrode PE. . 3, the pad portion PD is disposed in the integrated circuit bonding portion 120 of the non-display region NA, and the driving integrated circuit 110 is bonded. Accordingly, the pad unit PD exchanges various driving voltages and driving signals with the driving integrated circuit 110. It plays a role. Further, the pad portion PD is disposed in the circuit film bonding portion 132 of the non-display area NA, and the flexible printed circuit 130 is bonded. Accordingly, the pad unit PD exchanges various driving voltages and driving signals with the substrate SUB of the flexible printed circuit 130.

The display panel 100 includes a moisture barrier layer MPB covering the entire surface of the substrate SUB including the organic light emitting diode OLED and the pad portion PD. The moisture barrier layer MPB includes a display region AA) as well as the non-display area NA to protect the organic light emitting diode OLED from moisture that can be introduced from the outside. The moisture barrier layer MPB is provided with a pad hole PDH for exposing the pad portion PD in the non-display area NA, and will be described in detail as follows.

Referring to FIG. 4, the moisture barrier layer MPB covers not only the display area AA but also the non-display area NA. The moisture barrier layer (MPB) is selectively removed in the non-display area (NA) through a laser process, thereby forming a pad hole (PDH) exposing the pad part (PD). That is, the pad hole PDH exposes the upper transparent electrode TE of the pad portion PD through the moisture barrier layer MPB. Accordingly, the present invention can reduce the manufacturing cost by eliminating the masking process when forming the moisture-barrier film (MPB). Further, since the margin of the non-display area NA can be reduced in consideration of the shadow area as the mask process is deleted, the narrow bezel design is easy. Since the moisture barrier layer MPB is formed so as to cover the entire surface of the non-display area NA except for the organic light emitting device OLED as well as the pad part PD, Reliability can be improved.

5 is a plan view schematically showing the integrated circuit bonding portion 120 shown in FIG.

5, the integrated circuit bonding portion 120 includes a plurality of pad portions PD, and the plurality of pad portions PD include an output pad portion PD and an input pad portion PD .

The output pad portion OPP includes first and second gate output pad portions GOP1 and GOP2 and a data output pad portion DOP. The first and second gate output pad portions GOP1 and GOP2 are disposed with a data output pad portion DOP therebetween. Each of the first and second gate output pad portions GOP1 and GOP2 includes a gate pad electrode electrically connected to the gate line GL through a gate connection portion GCP and a gate pad electrode electrically connected to the gate pad GL, And a gate pad GP including an upper gate transparent electrode electrically connected to the electrode. The data output pad portion PD includes a data pad electrode electrically connected to the data line DL and a data pad including an upper data transparent electrode electrically connected to the data pad electrode by covering a part of the front surface of the data pad electrode DP).

The input pad unit IPP is electrically connected to the flexible printed circuit 130 through the input link line ILL so that the driving power supplied from the flexible printed circuit 130, And a plurality of input pad units IP supplied thereto. Each of the plurality of input pad portions IP includes an input pad electrode electrically connected to the input link line and an upper input transparent electrode electrically connected to the input pad electrode by covering a part of the front surface of the input pad electrode.

Hereinafter, the liquid crystal display according to the first embodiment of the present invention will be described more specifically.

FIG. 6 is a cross-sectional view illustrating the organic light emitting display shown in FIG. 2. Referring to FIG. 6 is a cross-sectional view showing the display area AA of the display panel 100 shown in Fig. 2 and the non-display area NA where the pad portion PD is formed.

Referring to FIG. 6, the organic light emitting display according to the first embodiment of the present invention includes a thin film transistor ST and a thin film transistor DT formed in a display area AA, an organic light emitting element The substrate SUB on which the thin film transistors ST and DT and the organic light emitting devices OLED are formed and the front film FS, And a substrate ES.

The thin film transistors ST and DT include a switching TFT ST, a driving TFT DT connected to the switching TFT ST and an organic light emitting diode OLED connected to the driving TFT DT.

The switching TFT ST is disposed in a region where the gate line GL and the data line DL cross each other. The switching TFT ST includes a gate electrode SG, a semiconductor layer SA, a source electrode SS and a drain electrode SD which branch off from the gate line GL. This switching TFT ST functions to select the pixel P. [

The driving TFT DT includes a gate electrode DG connected to the drain electrode SD of the switching TFT ST, a source electrode DS connected to the semiconductor layer DA, the driving current transfer wiring VDD, (DD). The drain electrode DD of the driving TFT DT is connected to the anode electrode ANO of the organic light emitting element OLED. This driving TFT DT serves to drive the anode electrode ANO (first electrode) of the pixel P selected by the switching TFT ST.

Meanwhile, a top gate structure and a bottom gate structure can be applied to the thin film transistors ST and DT according to the first embodiment of the present invention. However, for convenience of description, the first embodiment of the present invention will be described with reference to FIG. 6 with reference to a thin film transistor of a top gate structure.

The semiconductor layer DA of the switching TFT ST and the semiconductor layers DA of the driving TFT DT are formed first on the buffer layer BUF of the substrate SUB and the gate insulating film GI covering the top of the buffer layer BUF, The gate electrodes SG and DG are formed so as to overlap the center portions of the semiconductor layers SA and DA. The source electrodes SS and DS and the drain electrodes SD and DD are formed on the insulating film IN covering the gate electrodes SG and DG. The source electrodes SS and DS and the drain electrodes SD and DD are connected to the semiconductor layers SA and DA through the insulating film IN and the contact holes passing through the gate insulating film GI.

The protective film PAS and the planarizing film PL are coated on the substrate SUB on which the driving TFT DT and the switching TFT ST are formed. A contact hole exposing the drain electrode DD of the driving TFT DT is formed in the protective film PAS and the planarizing film PL and the anode electrode ANO of the organic light emitting element OLED is driven through the contact hole And is electrically connected to the drain electrode DD of the TFT DT.

A bank BANK is formed on the substrate SUB excluding the pixel P region in the display region AA. This bank BANK serves to divide the pixel P region.

Meanwhile, the pixel P region is formed with an organic light emitting diode (OLED). The organic light emitting diode OLED is formed by depositing a conductive material on the entire surface of the display area AA including the anode electrode ANO, the organic light emitting layer OLE formed on the anode electrode ANO, the bank BANK, and the organic light emitting layer OLE. And a cathode electrode (CAT).

The moisture barrier layer MPB is deposited on the substrate SUB including the organic light emitting diode OLED. The moisture barrier layer (MPB) may have a single layer or a multilayer structure in which an inorganic film and an organic film are selectively laminated.

In the organic light emitting display having the above structure, the front film FS is coated on the entire surface of the display area AA, and the sealing substrate ES is bonded together via the front film FS.

On the other hand, a pad portion PD is formed in the non-display area NA. Specifically, the pad portion PD is disposed in an integrated circuit bonding portion 120 to which the driving integrated circuit 110 is bonded and a circuit film bonding portion 132 to which the flexible printed circuit 130 is bonded.

The pad portion PD includes a pad electrode PE provided on the same layer as the gate electrodes SG and DG or the data electrodes SS, SD, DS and DD of the thin film transistor array 70, And an upper transparent electrode TE which is electrically connected to the pad electrode PE. For example, the pad electrode PE may be provided on the same layer as the data electrodes SS, SD, DS, and DD, as shown in FIG. The upper transparent electrode TE may be provided on the same layer as the anode electrode ANO of the organic light emitting diode OLED. The non-display area NA around the pad part PD is coated with the moisture permeation preventive film MPB, but the pad part PD is opened through the pad hole PDH of the moisture permeation preventive film MPB.

Hereinafter, a method of manufacturing an organic light emitting diode display according to a first embodiment of the present invention will be described with reference to FIGS. 7A to 7E. 7A to 7E are views for explaining a method of manufacturing the organic light emitting display according to the first embodiment of the present invention.

First, as shown in FIG. 7A, thin film transistors ST and DT and a pad electrode PE of a pad portion PD are formed on a substrate SUB. A protective film PAS is deposited on the entire surface of the substrate SUB including the thin film transistors ST and DT and the pad electrode PE. The thin film transistors ST and DT are formed to have a top gate structure and the pad electrode PE is connected to the data electrodes of the thin film transistors ST and DT, that is, the source electrodes SS and DS, (SD, DD).

Subsequently, as shown in FIG. 7B, after the planarization film PL is deposited, a drain electrode DD of the driver TFT DT and a contact hole exposing the pad electrode PE are formed. The anode electrode ANO connected to the drain electrode DD of the driving TFT DT through the contact hole and the anode electrode ANO connected to the pad electrode PE by covering the entire surface of the pad electrode PE through the other contact hole. Thereby forming a transparent electrode TE.

Next, as shown in FIG. 7C, a bank BANK and an organic light emitting layer OLE are formed, and a cathode electrode CAT is deposited on the bank BANK and the organic light emitting layer OLE. In this way, the moisture barrier layer (MPB) is deposited on the organic light emitting diode OLED. At this time, the moisture barrier layer MPB is deposited not only in the display area AA but also in the non-display area NA.

7D, the moisture barrier layer MPB is selectively removed from the non-display area NA using a laser process to form a pad hole PDH exposing the upper transparent electrode TE . The laser process will be described later in detail.

7E, a front film FS is applied to the entire surface of the display area AA, and the sealing substrate ES is attached to the front surface of the display area AA via the front film FS.

FIG. 8 is a view for explaining an optimal laser wavelength band for selective etching, showing the absorptance according to the laser wavelength (nm) of SiON, SiNx, MoTi and ITO materials.

As can be seen from FIG. 8, the laser absorption rate of SiON or SiNx is remarkably lowered at 355 nm or 532 nm, whereas the laser absorption rate of SiON or SiNx is at least 20% at 248 nm or 266 nm. Also, it can be seen that the laser absorption rate of ITO is higher than that of SiON or SiNx.

Therefore, when a laser beam having a wavelength of 248 nm or 266 nm is irradiated to the pad portion PD in the laser process for forming the pad hole PDH, only the moisture-permeable barrier layer (MPB) made of SiNx or SiON, which is relatively weak to heat, is etched, The upper transparent electrode TE made of strong ITO remains. Accordingly, the moisture barrier layer (MPB) covering the pad portion PD can be selectively removed using a laser to form the pad hole (PDH).

The laser may use an excimer laser having a deep UV wavelength, and the deep UV wavelength is preferably a wavelength range of 100 nm to 300 nm. In particular, it may be optimal to use an excimer laser with a wavelength of 248 nm.

9 is a cross-sectional view illustrating an organic light emitting display according to a second embodiment of the present invention.

Referring to FIG. 9, the organic light emitting display according to the second embodiment of the present invention differs from the first embodiment in the structure of the pad portion PD, and the remaining components are the same. Therefore, only the pad portion PD will be described as a configuration that varies in the second embodiment.

The pad portion PD includes a pad electrode PE and a pad electrode PE provided in the same layer as the gate electrodes SG and DG or the data electrodes SS, SD, DS and DD of the thin film transistor array 70, And an upper transparent electrode TE which is electrically connected to the pad electrode PE by covering both the front surface and the side surface of the pad electrode PE. As described above, in the second embodiment, the upper transparent electrode TE covers the entire surface and the side surface of the pad electrode PE, so that the adhesion area between the pad electrode PE and the upper transparent electrode TE is widened. This is to prevent the upper transparent electrode TE from being lost during the laser process for forming the pad hole PDH.

Specifically, the interfacial adhesion force between the upper transparent electrode TE and the protective film PAS is lower than the interfacial adhesion force between the upper transparent electrode TE and the pad electrode PE. Therefore, when the upper transparent electrode TE covers only a part of the front surface of the pad electrode PE as in the first embodiment, the problem that the upper transparent electrode TE is lost during the laser process for forming the pad hole PDH Lt; / RTI > In the second embodiment, the upper transparent electrode TE covers both the front surface and the side surface of the pad electrode PE, thereby widening the bonding area between the pad electrode PE and the upper transparent electrode TE, It is possible to prevent the loss of the upper transparent electrode TE which may be generated in the laser process for forming the upper transparent electrode TE.

Hereinafter, a method of manufacturing an organic light emitting diode display according to a second embodiment of the present invention will be described with reference to FIGS. 10A to 10F. FIGS. 10A to 10F are views for explaining a method of manufacturing an organic light emitting display according to a second embodiment of the present invention.

First, as shown in FIG. 10A, thin film transistors ST and DT and a pad electrode PE of a pad portion PD are formed on a substrate SUB. A protective film PAS is deposited on the entire surface of the substrate SUB including the thin film transistors ST and DT and the pad electrode PE. The thin film transistors ST and DT are formed to have a top gate structure and the pad electrode PE is connected to the data electrodes of the thin film transistors ST and DT, that is, the source electrodes SS and DS, (SD, DD).

10B, after the planarization film PL is deposited, a drain electrode DD of the driver TFT DT and a contact hole exposing the pad electrode PE are formed. At this time, the contact hole formed in the pad portion PD is formed to expose both the front surface and the side surface of the pad electrode PE.

10C, an anode electrode ANO connected to the drain electrode DD of the driving TFT DT through the contact hole and a front surface and a side surface of the pad electrode PE through another contact hole Thereby forming an upper transparent electrode TE connected to the pad electrode PE.

Next, as shown in FIG. 10D, a bank BANK and an organic light emitting layer OLE are formed, and a cathode electrode CAT is deposited on the bank BANK and the organic light emitting layer OLE. In this way, the moisture barrier layer (MPB) is deposited on the organic light emitting diode OLED. At this time, the moisture barrier layer MPB is deposited not only in the display area AA but also in the non-display area NA.

Next, as shown in FIG. 10E, the moisture barrier layer MPB is selectively removed from the non-display area NA using a laser process to form a pad hole PDH exposing the upper transparent electrode TE .

10F, a front film FS is applied to the entire surface of the display area AA, and the sealing substrate ES is attached to the front surface of the display area AA via the front film FS.

As described above, the present invention can reduce the manufacturing cost by eliminating the masking process in the formation of the moisture barrier layer (MPB). Further, since the margin of the non-display area NA can be reduced in consideration of the shadow area as the mask process is deleted, the narrow bezel design is easy. Since the moisture barrier layer MPB is formed so as to cover the entire surface of the non-display area NA except for the organic light emitting device OLED as well as the pad part PD, Reliability can be improved.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents. Will be clear to those who have knowledge of. Therefore, the scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention.

MPB: moisture barrier film
PDH: Pad hole
FS: front film
ES: encapsulation substrate
PD: pad portion
110: drive integrated circuit
PE: pad electrode
TE: upper transparent electrode

Claims (9)

A thin film transistor array disposed in a display region on a substrate;
An organic light emitting device provided on the thin film transistor array;
A pad portion disposed in a non-display region of the substrate; And
And a moisture barrier layer covering the organic light emitting device and having pad holes exposing the pad unit. The method according to claim 1,
The pad portion
A pad electrode provided on the same layer as the gate electrode or the data electrode of the thin film transistor array; And
And an upper transparent electrode covering a part of the front surface of the pad electrode. The method according to claim 1,
Wherein the upper transparent electrode covers the entire front and side surfaces of the pad electrode. 3. The method of claim 2,
And the pad hole penetrates the moisture barrier layer to expose the upper transparent electrode. Forming a thin film transistor array on a substrate;
Forming an organic light emitting device on the thin film transistor array; And
Forming a moisture barrier layer on the entire surface of the substrate including the organic light emitting device and a pad portion provided in a non-display region of the substrate; And
And forming a pad hole exposing the pad portion by selectively removing the moisture barrier layer using a laser process. 6. The method of claim 5,
The step of forming the pad portion
Forming a pad electrode on the substrate;
Forming an insulating layer on the entire surface of the substrate including the pad electrode, and then selectively removing the insulating layer to expose a part of the front surface of the pad electrode; And
And forming an upper transparent electrode to cover a part of a front surface of the pad electrode. 6. The method of claim 5,
The step of forming the pad portion
Forming a pad electrode on the substrate;
Forming an insulating layer on the entire surface of the substrate including the pad electrode, and then selectively removing the insulating layer to expose the entire front and side surfaces of the pad electrode; And
And forming an upper transparent electrode to cover the entire front and side surfaces of the pad electrode. The method according to claim 6,
Wherein the pad electrode is formed simultaneously with a gate electrode or a data electrode of the thin film transistor array of the thin film transistor array,
Wherein the upper transparent electrode is formed simultaneously with the anode electrode of the organic light emitting device. 6. The method of claim 5,
Wherein the laser process employs an excimer laser having a wavelength range of 100 nm to 300 nm.

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