KR20160070687A - Method of removing resist film, resist film removing apparatus and storage medium - Google Patents

Abstract

The purpose of the present invention is to control, with high precision, the shape of a region where a resist film is removed, in removing the resist film in a linear region on a substrate having a cutout formed on an outer circumference. A resist film removing method comprises the processes of: exposing a first region to light by arranging, in the first region, a light radiation region for locally exposing a substrate; obtaining image data by photographing a first substrate, and obtaining positional data about relation among a position where the substrate is exposed to light, the position of the cutout and the central position of the substrate based on the image data; placing the radiation region in a second region having the position thereof corrected from a region corresponding to the first region, based on the positional data with respect to a second substrate; exposing a linear region including the second region to light by relatively moving the radiation region with respect to the second substrate; and removing a resist film in the linear region by developing the substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to a resist film removal method, a resist film removal method,

The present invention relates to a resist film removing method, a resist film removing apparatus, and a storage medium for removing a resist film in a region along a straight line of a substrate.

In a photolithography process in a semiconductor device manufacturing process, a resist coating process for forming a resist film on a semiconductor wafer (hereinafter referred to as a wafer), an exposure process (pattern exposure process) for exposing the resist film to a predetermined pattern, And a series of developing processes for developing the resist film are successively performed to form a predetermined resist pattern on the resist film. For example, the resist coating process and the developing process are performed in the coating and developing apparatus, and the pattern exposure processing is performed in the exposure apparatus connected to the coating and developing apparatus, respectively.

In this photolithography process, it has been studied to expose a portion near the cutout (notch) formed on the outer periphery of the wafer along a straight line, and thereafter to remove the resist film in the exposed linear region by development processing.

Patent Document 1 discloses a peripheral exposure module for exposing a periphery of a wafer to the periphery of the wafer, which is provided in the coating and developing apparatus, and the linear region is exposed using, for example, a peripheral exposure module And the like. Further, in the exposure of the linear region, in order to prevent the influence on the formation region of the semiconductor device in the surface of the wafer, the position to be exposed is controlled with high precision, thereby controlling the shape of the region where the resist film is removed with high precision Is required. In addition, the Patent Document 1 does not describe a technique for exposing a linear region.

Conventionally, the developed wafer is transported to a measuring instrument provided outside the coating and developing apparatus, and measurement is carried out to determine whether or not the exposure position on the wafer is appropriate, and the operation of the module is corrected according to the determination there was. However, it is troublesome to carry the wafer to the measuring instrument like this, and there is a possibility that a long time is required until correction is performed.

Japanese Patent Application Laid-Open No. 2014-91105

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and provides a technique for precisely controlling the shape of a region in which a resist film is removed, in removing a resist film in a linear region on a substrate having a cutout formed on the outer periphery.

In the resist film removing method of the present invention,

A light irradiation region for locally exposing the substrate is disposed in a first region of a first substrate of a first substrate and a second substrate on which a resist film is formed on a surface of each of the first region and the second region, Exposing the photoresist film to light,

Acquiring image data of the first substrate to acquire image data and acquiring positional data relating to a relationship between a position where the substrate is exposed, a position of the cutout, and a center position of the substrate, based on the image data;

Positioning the irradiation region on the second substrate in a second region whose position is corrected from an area corresponding to the first region, based on the position data;

A step of relatively moving the irradiation region with respect to the second substrate to expose a linear region including the second region,

A step of developing the substrate to remove the resist film in the linear region

And a control unit.

An apparatus for removing a resist film according to the present invention comprises an exposure unit for forming a notch on the outer periphery and locally exposing a substrate on which a resist film is formed,

An imaging unit for imaging the substrate to acquire image data;

A moving mechanism for relatively moving the irradiation region with respect to the substrate;

A development module for developing the substrate exposed by the exposure section to remove the resist film in the exposed area,

The method comprising the steps of: exposing a first region of a first substrate by the exposure section; imaging the first substrate to acquire image data; and based on the image data, A position of the second region is corrected based on the positional data with respect to the second substrate, the position of the second region being corrected from the region corresponding to the first region, A step of moving the irradiation region relative to the second substrate to expose a linear region including the second region; and a step of developing the substrate to form the resist A control section for outputting a control signal so that the steps of removing the film are performed in order,

And a control unit.

A storage medium according to the present invention is a storage medium storing a computer program used in a resist film removing apparatus for locally exposing a substrate on which a resist film is formed on a surface thereof and removing a resist film in an exposed area,

The computer program is characterized in that step groups are formed to execute the resist film removing method.

According to the present invention, the substrate is picked up to acquire data on the center of the substrate, the section results formed on the substrate, and the positional relationship between the exposure areas, and the linear region of the subsequent substrate is exposed based on the data. Therefore, the shape of the region where the resist film is removed can be controlled with high accuracy.

1 is a schematic configuration diagram of a coating and developing apparatus 1 for carrying out a coating film removing method of the present invention.
2 is a longitudinal side view of an optional exposure module constituting the coating and developing apparatus.
3 is a cross-sectional plan view of the selective exposure module.
4 is a flow chart for explaining exposure of a wafer by the selective exposure module.
5 is a process diagram for explaining exposure of a wafer by the selective exposure module.
6 is a process diagram for explaining exposure of a wafer by the selective exposure module.
7 is a process diagram for explaining exposure of a wafer by the selective exposure module.
8 is an explanatory view showing a state in which the wafer moves and rotates when exposed.
9 is a longitudinal side view of the inspection module constituting the coating and developing apparatus.
10 is an explanatory diagram showing an image of a wafer picked up by the inspection module.
11 is an explanatory view showing an image of a wafer picked up by the inspection module.
12 is a flowchart for correcting the position of the linear exposure.
13 is a longitudinal side view of a selective exposure module according to another configuration example.
14 is a cross-sectional plan view of the selective exposure module.
15 is an explanatory view showing a state in which the wafer moves and rotates when exposed.
16 is an explanatory view showing an image of a wafer picked up by the inspection module.
17 is a process diagram for explaining exposure of a wafer by the selective exposure module.
18 is a process diagram for explaining exposure of a wafer by the selective exposure module.
19 is a process diagram for explaining exposure of a wafer by the selective exposure module.
20 is a process diagram for explaining exposure of a wafer by the selective exposure module.
21 is an explanatory diagram showing an image of a wafer picked up by the inspection module.
22 is a plan view of the coating and developing apparatus.
23 is a perspective view of the coating and developing apparatus.
24 is a schematic longitudinal side view of the coating and developing apparatus.

Fig. 1 shows a schematic configuration of a system including a coating and developing apparatus 1 for carrying out the resist film removing method of the present invention. The wafer W to be processed in this system is a circular substrate, and on the outer periphery thereof, a notch N, which is a fan-shaped notch, is formed so as to indicate the direction of the wafer W and to the center side of the wafer W. In the figure, "C" denotes a carrier which stores the wafer W and applies it to the developing apparatus 1. In the figure, reference numeral 11 denotes a resist coating module, which applies a resist to the surface of the wafer W to form a resist film as a coating film.

Reference numeral 21 in the drawing denotes an optional exposure module. The selective exposure module is a peripheral exposure module described in the background section, and selectively exposes a peripheral region of the wafer W and a linear region in the plane of the wafer W. [ Reference numeral 12 in the drawing denotes a developing module which supplies a developing solution to the wafer W to dissolve and develop the resist film in the exposed area. In the figure, reference numeral 41 denotes an inspection module, which picks up an image of the surface of the developed wafer W for inspection. In the coating and developing apparatus 1, an exposure apparatus 13 for exposing the surface of the resist film along a predetermined pattern is connected. The exposure by the exposure apparatus 13 may be referred to as pattern exposure in order to distinguish it from the exposure by the selective exposure module 21. [ In the figure, reference numeral 14 denotes a transport mechanism of the wafer W to be provided in the coating and developing apparatus 1.

In the normal processing operation, the carrier mechanism 14, the resist application module 11, the selective exposure module 21, the exposure device 13, the development module 13, The wafer W is carried in the order of the wafer 12, the inspection module 41, and the carrier C, and a resist pattern is formed on the wafer W, and an image for performing the inspection is obtained. The coating and developing apparatus 1 is provided with a transport mechanism 14 and a control unit 10 which is a computer for controlling the operation of each module. An example of a more detailed configuration of the coating and developing apparatus 1 will be described later.

2 and 3 show a longitudinal side view and a cross sectional top view of the selective exposure module 21, respectively. In the figure, reference numeral 22 denotes a housing, and a carrying port 23 of the wafer W is formed on the side wall of the housing 22. [ Reference numeral 24 in the drawing denotes a moving and rotating mechanism that linearly moves in the horizontal direction between the front side (the side of the conveying mouth 23) and the inside of the housing 22 along the guide 25. The moving / rotating mechanism 24 is provided with a stage 26 of the wafer W. The wafer W placed horizontally on the stage 26 is rotated about the vertical axis by the moving / rotating mechanism 24. [

On the inside of the housing 22, a peripheral end portion detection sensor 27 for a wafer W, which is a transmission type sensor constituting a peripheral end portion detection portion, is provided. The peripheral edge detecting sensor 27 includes a transparent portion 27A and a light receiving portion 27B provided so as to be spaced apart from each other in the vertical direction and is provided with a peripheral portion of the wafer W rotated by the stage 26, 27A to the light receiving portion 27B, and a part of the irradiated light is blocked at the peripheral end portion of the wafer W. The light receiving section 27B transmits a detection signal to the control section 10 in accordance with the size of the area receiving the light. Based on the detection signal output during one rotation of the wafer W, the control unit 10 detects the position of the peripheral edge around the entire wafer W, and detects the position of the edge of the stage 26 (Eccentricity) between the center of the wafer W and the center of rotation of the stage 26 and the center of the wafer W is detected. The eccentricity includes information on the distance (displacement amount) of the center of the wafer W with respect to the rotation center of the stage 26 and the direction of the deviation. The direction of the deviation is, for example, Is an inclination in the direction from the center of the wafer W to the rotation center with respect to the direction from the center toward the apex of the notch N. [

An exposed portion 31 is provided on the inner side of the housing 22. The exposure unit 31 includes a light source, a shutter for switching between a state of passing light in an optical path of light emitted from the light source and a state of blocking light, and a horizontal plate mask provided on the downstream side of the shutter in the optical path . The light source and the shutter are shown as light irradiating part 32 in the figure, and the mask is shown as 33. [ A rectangular opening 34 is formed in the mask 33 and light from the light irradiating portion 32 which has passed through the opening 34 is irradiated onto the wafer W. [

4 to 7, exposure of a linear region (referred to as linear exposure in some cases) may be described with respect to the exposure of the peripheral portion of the resist film formed on the wafer W by the selective exposure module 21 ) Is performed. In these drawings, a large number of dots are taken in the unexposed area of the resist film in the exposure module 21, and dots are not taken in the exposed area. The center of the wafer W is denoted by P1 and the area irradiated with the light irradiated to the wafer W via the mask 33 of the exposure section 31 is denoted by reference numeral 101 and the center of the irradiated region 101 by P2 . The irradiation region 101 is rectangular in correspondence with the shape of the opening 34 of the mask 33. 5 to 7, a virtual straight line passing through the center P1 of the wafer W and the vertex of the notch N is indicated by a reference numeral 102, and a virtual straight line 102, which is spaced from the center P1 by a predetermined distance A virtual straight line passing through the point orthogonal to the imaginary straight line 102 is indicated by the reference numeral 103. [ In Figs. 6 and 7, an area exposed in the linearly exposed area is indicated by the reference numeral 104. Fig.

The peripheral edge position of the wafer W is first detected by the peripheral edge detecting sensor 27 and based on this, the direction of the vertex of the notch N, the center position of the wafer W and the eccentricity are detected. Then, as shown in Fig. 4, while the wafer W is rotating, peripheral exposure is performed in which the periphery of the wafer W is exposed by the exposure portion 31 in a ring shape. The peripheral exposure is performed in a linear direction while the stage 26 is rotating according to the center position and eccentricity of the detected wafer W so that the widths of the respective portions of the exposed ring-shaped region become uniform.

Subsequently, based on the detected vertex of the notch N, the center position of the wafer W, and the eccentricity, the irradiation region 101 is arranged such that its center P2 is located at the intersection of the imaginary straight lines 102 and 103 5). When the position of the irradiation region 101 arranged as described above is set at the start position of the linear exposure, the irradiation region 101 disposed at the starting position is irradiated with light and exposed, Is stopped once. Then, the stage 26 linearly moves and rotates to move the irradiation region 101 from the starting position.

Thereafter, linear movement and rotation of the stage 26 are stopped (Fig. 6). The amount of the linear movement and the amount of rotation are set so that the center P2 of the irradiation area 101 is positioned on the imaginary straight line 103 at the time of stopping. 101 are irradiated with light, and a region shifted from the start position is exposed. Likewise, after the irradiation of the light is stopped, the position of the irradiation area 101 on the wafer W is similarly moved by a predetermined amount of linear movement and the center P2 is stopped on the virtual straight line 103 Light is irradiated. Intermittent movement of the irradiation region 101 and intermittent irradiation of light to the irradiation region 101 are repeatedly performed so that a linear region along the imaginary straight line 103 is formed at one end of the wafer W To the other end. In such a linear exposure, since the linear region corresponding to the start position is exposed, the accuracy of the start position affects the accuracy of the position of the entire region exposed by the linear exposure.

4 to 7, when the irradiation region 101 is arranged at each position on the surface of the wafer W, the shorter sides and longer sides of the irradiation region 101 are aligned with the virtual straight lines 102 and 103, respectively The direction of the irradiation area 101 in each part of the wafer W differs because the irradiation area 101 moves by the inclination and rotation of the stage 26 only. In other words, in reality, the short side and the long side of the irradiation region 101 with respect to the imaginary straight lines 102 and 103 vary depending on the position of the wafer W on the irradiation region 101, but the illustration is omitted.

The starting position of the linear exposure will be further described. The center of the wafer W is placed so as to overlap with the center of rotation of the stage 26 in the selective exposure module 21 without any eccentricity in the wafer W. That is, The position of the wafer W when the stage 23 makes one revolution is used as the reference position and the position of the stage 23 at this time is set as the rotation position for peripheral end detection. The direction of the wafer W when the notch N is oriented in a predetermined direction at the reference position is set as a reference direction. For example, FIG. 2 shows the wafer W positioned at the reference position and the stage 26 positioned at the rotational position for peripheral end detection. Further, the direction of the wafer W shown in Fig. 2 is set as the reference direction of the wafer W, for example.

5, the start position of the linear exposure, that is, the center P2 of the irradiation area 101 is preliminarily set in advance in the memory 100 constituting the control unit 10, for example, A movement distance X0 in the linear direction of the stage 26 necessary for moving the wafer W to a position superimposed on the intersection of the set virtual lines 102 and 103 and a movement distance X2 necessary for rotating the wafer W from the reference direction to the start position of linear exposure And the rotation angle R0 of the stage 33 (see the upper part of Fig. 8). Based on the data X0 and R0 and the data of the eccentricity of the detected notch N and the data of the eccentricity, the control unit 10 determines the position at which the linear exposure is started on the wafer W from the rotational position for detecting the peripheral edge of the stage 26 And the rotation angle R1 in the straight line direction. The movement and rotation of the stage 26 in the linear direction are controlled based on these X1 and R1, and the irradiation area 101 is disposed at the start position of the linear exposure (refer to the bottom of Fig. 8). In Fig. 8, the center of rotation of the stage 26 is indicated as P3.

Next, the inspection module 41 will be described with reference to Fig. In the drawing, reference numeral 42 denotes a stage, which horizontally loads the wafer W and moves horizontally in a linear direction. In the figure, reference numeral 43 denotes a half mirror provided above the moving path of the wafer W loaded on the stage 42. [ In the figure, reference numeral 44 denotes a camera serving as an image pickup unit, which picks up an image pickup area 45 in the moving path of the wafer W through the half mirror 43 to obtain image data, . The image data includes data concerning the luminance of the image sensing area 45. [ In the figure, reference numeral 46 denotes illumination provided above the half mirror 43, and irradiates the imaging region 45 with light through the half mirror 43. [

The size of the imaging area 45 is such that a part of the wafer W is included and the size of the imaging area 45 is set to be a constant value by the camera 44 during the passage of the wafer W through the imaging area 45 by the stage 42 And the entire surface of the wafer W is picked up. Thereby, the control section 10 can acquire image data of the entire surface of the wafer W. [ The imaging region 45 is configured so that the outside of the wafer W in the acquired image data has a lower luminance than in the plane of the wafer W. [

In the coating and developing apparatus 1, when performing an operation (hereinafter referred to as a normal processing operation) for performing a process on the wafer W in order to manufacture a semiconductor device, as described in FIG. 1, And the selective exposure module 21 performs peripheral exposure and linear exposure as described in Figs. 4 to 7. Further, the coating and developing apparatus 1 performs a correcting operation for correcting the position at which the linear exposure is performed, before performing such normal processing operation.

Hereinafter, the correction operation of the position of the linear exposure will be described. In this correction operation, for example, the wafer W is not transferred to the exposure apparatus 13, and the carrier C, the resist coating module 11, the selective exposure module 21, the developing module 12, the inspection module 31 ) → carrier C in this order. In the selective exposure module 21, for example, after the peripheral edge exposure is performed in the same manner as in the normal processing operation, the irradiation region 101 is disposed at the start position of the linear exposure as described in FIG. 5, , Thereafter the region deviated from the start position is not exposed, and the wafer W is carried out of the selective exposure module 21. [

10 and 11 show an example of the image of the wafer W captured and acquired by the inspection module 41 in the above-described correction operation. The area exposed in the selective exposure module 21 is developed in the development module 12, and the resist film is removed, so that the brightness in the image is larger than in the unexposed area. In addition, as described above, the brightness within the plane of the wafer W is larger than the outside of the wafer W.

The control unit 10 can specify the position of the removed region 106 of the resist film corresponding to the start position of the linear exposure within the plane of the wafer W from the acquired image data. Then, it is determined whether or not the position of the removal area 106 of the resist film is proper. If it is determined that the position of the removal area 106 of the resist film is not appropriate, the wafer W in the direction of reference, And corrects for the movement distance X0 and the rotation angle R0 in the linear direction for moving to the position. Whereby the start position of the linear exposure on the wafer W is corrected.

Since the irradiation region 101 of the exposure section 31 moves along the straight line with respect to the start position as described above, the position of the entire linearly exposed region of the wafer W is corrected by correcting the start position. The reason for carrying out the correction in this manner is that, in the case of moving the wafer W to the start position of linear exposure after detecting the eccentricity of the wafer W or the direction of the notch N as described above, for example, There is an error between the linear movement amount and the rotation amount of the stage 26 in design and the actual linear movement amount and the rotation amount from the limit of the processing accuracy of each part of the apparatus and the like, Is displaced from the position described in the bottom of Fig. 5 and Fig. 8.

Returning to Fig. 10 and Fig. 11, description will be continued. The upper and lower ends of Fig. 10 show an image when the position of the removal region 106 of the resist film is proper. In the figure, P4 indicates the center of the resist film removal area 106, and therefore its position corresponds to the position of the center P2 of the irradiation area 101 at the start position of the linear exposure. More specifically, the apex of the notch N, the center P3 of the removal region 106 and the center P1 of the wafer W are arranged in a straight line, and the center P4 and the center P4 of the wafer W The center P1 is at a predetermined distance. In each drawing, a virtual straight line passing through the center P1 and the vertex of the notch N is denoted by reference numeral 107. [

11 shows an image when the position of the removal region 106 of the resist film is not proper. Here, the top of the notch N, the center P4 of the removal region 106, and the center P1 of the wafer W Are not arranged on a straight line. A virtual straight line 107 connecting the apex of the notch N and the center P1 of the wafer W and a virtual straight line connecting the center P4 of the resist film removal region 106 and the center P1 11, the angle &thetas; 1 is 0 DEG (although the angle &thetas; 1 is not shown in FIG. 11 because it is 0 DEG) . The control unit 10 calculates this angle? 1 from the image data to determine whether or not the position of the removal region 106 of the resist film is appropriate. That is, the control unit 10 obtains the positional relationship between the notch N, the center of the wafer W, and the irradiation region 102 (first region) corresponding to the removal region 106. [

Hereinafter, each step in the correction operation of the position of the linear exposure and the subsequent normal processing operation will be described in order with reference to the flowchart of Fig. The preceding wafer W (referred to as a wafer W1 for convenience) having the resist film formed thereon is transferred to the selective exposure module 21 in the resist coating module 11. [ Then, the stage 26, which has received the wafer W1, rotates at the rotation position for detecting the peripheral edge, and light is irradiated to the peripheral edge of the wafer W1 by the peripheral edge detection sensor 27. [ When the wafer W makes one revolution, the rotation is stopped, and the position of the peripheral edge of the wafer W1 is detected by the detection signal output from the peripheral edge detecting sensor 27. [ The direction and eccentricity of the vertex of the notch N are detected based on the position of the peripheral edge (step S1).

After the rotation of the wafer W1 is stopped, the moving distance X0 and the rotation angle R0 in the linear direction stored in the memory 100 of the control unit 10, the direction of the vertex of the detected notch N, Based on the eccentricity, the linear movement distance X1 and the rotation angle R1 for moving the wafer W from the rotation position for detecting the peripheral end to the position for starting the linear exposure on the wafer W are calculated. Subsequently, as described with reference to Fig. 3, the wafer W is rotated once to perform peripheral exposure. Thereafter, the stage 26 is linearly moved so as to be spaced apart from the rotational position for detecting the peripheral edge by X1, and the detection of the peripheral edge of the wafer W is terminated and the rotation of the stage 26 is stopped. The stage 26 rotates so that the angle is changed by R1. That is, the stage 26 is linearly moved and rotated so that the irradiation area 101 of the exposure section 31 is located at the start position of the predetermined linear exposure of the wafer W as described with reference to Fig. Thereafter, the start position is exposed (step S2).

Thereafter, the wafer W1 is transferred to the developing module 12 for development processing, and the resist film at the start position is removed to form the resist film removal area 106. [ Thereafter, the inspection module 31 picks up the image data of the entire surface of the wafer W illustrated in Figs. 10 and 11 (step S3). Then, the center P1 of the wafer W and the vertex of the notch N are detected by using the difference between the brightness of the wafer W and the brightness of the outside of the image obtained from this image data. In addition, the center P4 of the removal region 106 is detected using the difference in brightness in the plane of the wafer W (step S4). The virtual straight line 107 passing through the center P1 of the wafer W and the vertex of the notch N shown in Fig. 11 and the imaginary straight line 108 passing through the center P1 of the wafer W and the center P4 of the removal region 106 The angle? 1, and the distance between the center P1 of the wafer W and the center P4 of the removal region 106 are calculated (Step S5).

It is determined that the position of the removal region 106 is appropriate if the angle? 1 is 0 占 and the distance between the center P1 of the wafer W and the center P4 of the removal region 106 is a set value. In this case, The correction of the linear movement distance X0 and the rotation angle R0 within the range is not performed. It is determined that the position of the removal region 106 is not proper if the angle &thetas; 1 is not 0 DEG or the distance between the center P1 of the wafer W and the center P4 of the removal region 106 is not the set value.

When the angle &thetas; 1 is not 0 DEG, the rotation angle R0 stored in the memory of the control section 10 is corrected so that the angle &thetas; 1 becomes 0 DEG according to the angle &thetas; Based on the thus corrected rotation angle R0, the distance between the center P4 of the wafer W and the center P4 of the removed region 106 in the case where the exposure is performed in the step S2 is calculated. If the distance is out of the set value , The value of the moving distance X0 in the linear direction is corrected as the distance value and the set value are shifted. When the angle &thetas; 1 is 0 DEG and the distance from the center P4 of the removal area 106 is deviated from the set value, the value of the movement distance X0 in the linear direction is corrected by the deviation of the distance value from the set value (step S6) .

If it is determined that correction is not necessary in this way, or if correction is performed for the linear movement distance X0 and / or the rotation angle R0, the correction operation for the linear exposure position is completed, and the subsequent wafer W ), A normal processing operation is started. The wafer W2 is transferred to the resist coating module 11 to form a resist film in the module 11, and then is transferred to the selective exposure module 21. [

The detection of the position of the peripheral edge portion of the wafer W2, the direction of the vertex of the notch N based on the position of the peripheral edge thereof, and the eccentricity detection of the wafer W are performed in the same manner as in Steps S1 and S2 performed on the wafer W1, The moving distance X1 and the rotation angle R1 in the linear direction are calculated based on the distance X0, the rotation angle R0, and the direction and eccentricity of the apex of the notch N. [ After the peripheral edge exposure is performed, the stage 26 is linearly moved so as to be spaced apart from the rotational position for detecting the peripheral edge by X1, and the detection of the peripheral edge of the wafer W is completed and the rotation of the stage 26 is stopped The stage 26 is rotated such that the angle is changed by R1.

X0 and R0 used for calculating the movement distance X1 and the rotation angle R1 with respect to the wafer W2 are corrected values when the correction is performed in the step S6. Therefore, when the movement and rotation of the stage 26 are completed, The center P2 of the region 101 is fitted to the intersection of the imaginary straight lines 102 and 103 described in Fig. 5 with high accuracy. That is, the irradiation area 101 is adjusted to the start position of the predetermined linear exposure with high accuracy. After the start position (second area) is exposed, the irradiation area 101 moves along the virtual straight line 103 as described with reference to Figs. 6 and 7, and the wafer W2 is linearly exposed (step 7).

When the linear exposure is completed, the wafer W2 is transferred to the exposure apparatus 13 and pattern-exposed. The resist film in the linear region developed along the periphery and the imaginary straight line 103 exposed in the selective exposure module 21 is developed in the developing module 12 and a resist pattern is formed in the outer resist film in the linear region . The above-described operations of the detection, data acquisition, calculation, correction, and determination of each value in each step of the processing for the wafers W1 and W2 are performed by the control unit 10. [

According to the coating and developing apparatus 1, since the position of the wafer W in the region to be linearly exposed by the selective exposure module 21 is controlled with high accuracy as described above, the region where the resist film is removed by this linear exposure Is controlled with high accuracy. Therefore, it is possible to prevent the region resist film for forming the semiconductor device on the wafer W from being removed, or the resist film to remain in the region where the resist film should be removed. As a result, the yield of the semiconductor device can be improved. Further, since the exposed wafer W does not need to be applied and conveyed to the external measuring device of the developing apparatus 1, it is possible to reduce the labor of conveying the wafer W, and delay the operation correction of the selective exposure module 21 by the time required for the conveyance .

(Second Embodiment)

The second embodiment will be described with a focus on differences from the first embodiment. Figs. 13 and 14 are longitudinal sectional side views and transverse plan views of the selective exposure module 21 of the second embodiment, respectively, with respect to the configuration of the selective exposure module 21 in the second embodiment. Fig. Respectively.

The selective exposure module 21 of the second embodiment includes an exposure section 51 instead of the exposure section 31. [ The mask 33 of the exposure section 51 has an inner cylindrical section 52 rising from the outside of the opening section 34. In the figure, reference numeral 53 denotes a flange 53 provided on the inner cylindrical portion 52. The light irradiating unit 32 has an outer cylindrical portion 54 surrounding the outer side of the inner cylindrical portion 52. The inner cylindrical surface of the outer cylindrical portion 54 is engaged with the flange 53, And a groove for supporting it is formed. In the figure, reference numeral 55 denotes a rotation drive mechanism provided outside the outer cylindrical portion 54, and is configured to rotate the circular rotary body 56 around the vertical axis. The outer periphery of the rotating body 56 is in contact with the outer periphery of the mask 33 and the mask 33 is rotated around the vertical axis by the rotation of the rotating body 56. [ The center of rotation of the mask 33 coincides with the center of the opening 34 of the mask 33.

The reason why the mask 33 is configured to be rotatable as described above will be described. Fig. 15 shows an example of the operation of the selective exposure module 21 for the wafer W in the correction operation described in the first embodiment. Therefore, in the description of FIG. 15, it is assumed that the wafer W is exposed by the exposure unit 31. FIG. 15 shows a state where the stage 26 on which the wafer W1 is mounted is located at the rotation position for detecting the peripheral edge and the center P1 of the wafer W1 is eccentric with respect to the rotation center P3 of the stage 26 . The lower end of Fig. 15 shows a state in which the stage 26 is moved so that the irradiation region 101 is disposed at the start position of the linear exposure from the state shown in the upper part of Fig. 15, in order to clarify the positional relationship between the irradiation region 101, the notch N and the center P1 of the wafer W1 on the outer side of the entire view of the wafer W1, As shown in Fig.

When the stage 26 moves so that the irradiation region 101 is disposed at the start position of the linear exposure as shown in the lower end of Fig. 15 due to the presence of the eccentricity, The long side of the irradiation area 101 and the virtual straight line 103 on which the center P2 of the irradiation area 101 is disposed are inclined with respect to each other. In the case of exposing the wafer W2 in the normal processing operation, similarly to the case of exposing the wafer W2 in the normal processing operation, between the longer side of the irradiation region 101 and the virtual straight line 103 A slope occurs. In addition to the presence of eccentricity as described above, even when the installation accuracy of the exposure section 31 is low, the long side of the irradiation area 101 disposed at the start position and the virtual straight line 103 are similarly inclined. The angle formed by the long side of the irradiation area 101 and the imaginary straight line 103 is the same as that of the irradiation area 101. Therefore, (101).

As described above, in the description of the first embodiment, the long side of the irradiation area 101 and the imaginary straight line 103 are shown as being parallel to each other in each part of the wafer W for the purpose of simplifying the illustration and facilitating the understanding of the explanation. But they are not actually limited to being parallel. That is, in the second embodiment, the direction around the center P2 of the irradiation area 101 is adjusted by rotating the mask 33, and the position of the irradiation area 101 at each position of the wafer W including the start position of the linear exposure The long sides and the imaginary straight line 103 are made to be parallel to each other so that the edge of the region where the resist film is removed can surely be made parallel to the virtual straight line 103. [

The correction operation of the position of the linear exposure in the second embodiment and the normal processing operation will be described focusing on the difference from the first embodiment. In the correction operation of the position of the linear exposure, a resist film is formed on the wafer W1 in the resist application module 11. Thereafter, the peripheral end position of the wafer W1 is detected by the selective exposure module 21, The data of the direction of the apex of the notch N and the eccentricity of the wafer W are obtained in the same manner as in step S1. Thereafter, the same operation as that in steps S2 and S3 is performed. That is, the light is irradiated from the exposure section 51 to the start position of the linear exposure, the start position is exposed, and the wafer W1 is picked up by the inspection module 41 after the development, and the image data of the wafer W1 is acquired. Fig. 16 shows an example of an image of the wafer W1 thus picked up.

If it is determined that the position of the removal region 106 of the resist film is appropriate based on the acquired image and it is determined that the position of the removal region 106 is not proper, the linear movement distance X0 of the stage 34 and / The rotation angle R0 is corrected. That is, the operations in steps S4 to S6 are performed. In the second embodiment, on the basis of the acquired image data, for example, a virtual straight line 107 connecting the apex of the notch N and the center P1 of the wafer W, The angle [theta] 2 (see FIG. 16) is calculated.

The angle? 2 is determined by the eccentricity of the wafer W1 and the direction of the irradiation region 101 at the time of exposure in Step S2. The calculated angle? 2 and the calculated eccentricity are obtained from the obtained eccentricity in the direction of the irradiation region 101 . Concretely, for example, the angle? 3 between the longer side of the irradiation area 101 and the virtual straight line 103 at the start position of the linear exposure is calculated (see the bottom of FIG. 15). If θ3 is 0 °, that is, if the long side of the irradiation area 101 and the virtual straight line 103 are parallel to each other, the irradiation area 101 is determined to be normal and the direction of the mask 33 at the start position Is not corrected. When? 3 is not 0, the direction of the irradiation area 101 is judged to be abnormal, and the mask 33 is rotated by the amount corresponding to? 3, so that the direction of the irradiation area 101 is corrected. Thereby, when the irradiation region 101 is arranged at the start position of the linear exposure, the long side of the irradiation region 101 and the virtual straight line 103 become parallel to each other.

Thereafter, the normal processing operation is started, and the wafer W2 on which the resist film is formed is transferred to the selective exposure module 21, and the detection of the position of the peripheral edge portion, like the wafer W1, Direction and the eccentricity of the wafer W2 are detected. Based on the direction and eccentricity of the vertex of the notch N and the data X0 and R0 in the memory 100 of the control unit 10 as described in the first embodiment, the movement distance X1 and the rotation angle R1 for moving the wafer W2 After the peripheral exposure, the stage 26 is linearly moved and rotated based on the X1 and R1, and the irradiation area 101 is moved to the start position of the linear exposure (Fig. 17). The long side of the irradiation area 101 and the imaginary straight line 103 are parallel to each other because correction is made with respect to the direction of the mask 33 as necessary as described above.

The stage 26 is rotated by a predetermined amount (Fig. 18), the stage 26 is moved by a predetermined amount in a straight line (Fig. 19), and the mask 33) rotates by a predetermined amount. Thereby, the irradiation region 101 moves from the starting position along the virtual straight line 103, and the longer side of the irradiation region 101 becomes parallel to the virtual straight line 103 (Fig. 20). Thereafter, light irradiation to the irradiation area 101 is performed. In the drawings of Figs. 18 to 20, the rotation of the stage 26, the linear movement of the stage, and the rotation of the irradiation area 101 are shown in order to facilitate understanding. However, for example, Are performed in parallel with each other.

As shown in Fig. 7, the irradiation of the irradiation region 101 and the adjustment of the direction of the irradiation region 101 and the irradiation of light to the irradiation region 101 are performed in this manner, so that a virtual straight line extending from one end of the wafer W to the other end 103 are exposed. After exposure is performed from the one end to the other end along the imaginary straight line 103, the wafer W2 is developed and the resist film in the exposed area is removed. According to the second embodiment, by performing exposure by rotating the mask 33 as described above, the exposed position of the wafer W is controlled with higher accuracy, and as a result, Can be controlled.

In the above example, when the stage 26 is moved, the irradiation region 101 rotates by a predetermined amount so that when the irradiation region 101 is irradiated with light, the irradiation region 101 moves in the same direction with respect to the virtual straight line 103 And the direction of the irradiation area 101 at the starting position is corrected in advance to make the edge part of the linearly exposed area parallel to the virtual straight line 103. [ Fig. 21 is an example showing a linearly-exposed area in the case where exposure is performed without correcting the direction of the irradiation area 101 at such a starting position. In the example shown in Fig. 21, by irradiating the irradiation region 101 obliquely with respect to the imaginary straight line 103, the region A1 is exposed in the rectilinearly exposed region twice repeatedly, This relatively small area A2 is formed. If the amount of exposure is too small, there is a possibility that the resist film may not be removed. Therefore, in order to increase the uniformity of the exposure amount in each portion of the linearly exposed region and more reliably remove the resist film in the exposed region, It is effective to correct the direction of the mask 33 in advance.

In order to correct the direction of the irradiation area 101, the irradiation part 32 including the light source may be rotated together with the mask 33. [ However, as described above, by only rotating the mask 33, it is possible to prevent the configuration of the rotating mechanism 55 from becoming large. The area to be exposed is not limited to the above example, and the entire periphery of the wafer W may be exposed along the rim of the device forming area in the surface of the wafer W. [ In the above example, the vertex of the notch N is detected from the image data. However, the present invention is not limited to detecting the vertex. For example, the center of gravity of the notch N may be detected.

Although the entire periphery of the wafer W is optically detected as described above, this optical detection is not limited to the use of the transmission type sensor. For example, a plurality of reflection type sensors are arranged in a line from the inside to the outside of the wafer W. The output signals from the respective reflection type sensors to the control unit irradiate light to the inside of the wafer W and those to which the light is irradiated to the outside of the wafer W. The control unit 10 The peripheral edge of the wafer W may be detected. As another optical detection, a peripheral end portion of the wafer W may be imaged using a camera, and the control section 10 may detect the peripheral end portion of the wafer W from the obtained image data.

For example, before transferring the wafer W to the stage 26 of the selective exposure module 21, alignment of the wafer W with respect to the transfer mechanism 14 is performed, and the transfer mechanism 14 transfers the wafer W in a predetermined direction The wafers W1 and W2 are transferred to the stage 26. When the stage 26 is positioned at the rotation position for peripheral end detection, the wafers W1 and W2 are directed toward the reference direction, As shown in Fig. More specifically, for example, a module provided with a stage 26 and a peripheral edge detection sensor 27 rotatable on the front end of the selective exposure module 21 is disposed, And detects the end portion. The transport mechanism 14 receives the wafer W so that the center of the wafer W detected from the peripheral end thereof is positioned at a predetermined position. When receiving, the notch N should be oriented in a predetermined direction.

In the case where the wafers W1 and W2 are directed toward the reference direction and are located at the reference position when the stage 26 is positioned at the rotation position for peripheral edge detection as described above, In order to correct the irradiation area 101 at the start position of the linear exposure, the peripheral edge portion of the selective exposure module 21 need not be detected to determine the direction of the notch N and the eccentricity with respect to the wafers W1 and W2. Further, only one of the wafers W1 and W2 may be aligned and aligned on the stage 26 as described above. In this case, the detection of the peripheral edge in the selective exposure module 21 may be performed only for the wafer W whose direction alignment and alignment are not performed.

In the above example, the irradiation region 101 moves along the straight line as the stage 26 moves with respect to the exposure units 31 and 51. However, the exposure units 31 and 51 move instead of the stage 26, Area 101 may be moved along a straight line. Further, in the above example, when the wafer W1 is developed after exposure but a chemical reaction occurs in the resist film due to exposure, and the brightness of the exposed area of the resist film changes, The irradiation area 10 can identify the irradiation area 101 concerned. In such a case, even if the wafer W1 is not developed, the inspection module 41 can specify the exposed area, so that the development of the wafer W1 may not necessarily be performed.

22 to 24 show an example of a detailed configuration of the coating and developing apparatus 1 constituting the resist film removing apparatus. 22, 23, and 24 are a plan view, a perspective view, and a schematic longitudinal sectional side view of the coating device, the developing device 1, respectively. The coating and developing apparatus 1 is constituted by linearly connecting the carrier block D1, the processing block D2 and the interface block D3. And the exposure apparatus 13 is connected to the interface block D3. In the following description, the arrangement directions of the blocks D1 to D3 are referred to as forward and backward directions. The carrier block D1 is configured to coat the carrier C and carry it in and out of the developing apparatus 1 and to carry the wafer W from the carrier C through the carrier 61, the opening and closing part 62, And a mobile mounting mechanism 63 are provided.

The processing block D2 is constituted by laminating the first to sixth unit blocks E1 to E6 for performing the liquid processing on the wafer W in order from the bottom. For convenience of explanation, the process of forming the anti-reflection film on the lower layer side of the wafer W is called " BCT ", the process of forming a resist film on the wafer W is called " COT ", the process of forming a resist pattern on the wafer W after exposure is called & Respectively. In this example, as shown in Fig. 23, the BCT layer, the COT layer, and the DEV layer are stacked in layers from the bottom. The wafer W is transferred and processed in parallel with each other in the same unit block.

Here, the COT layer E3 as a representative unit block will be described with reference to FIG. A plurality of shelf units U are arranged in the front and rear direction on one side of the transfer area 64 from the carrier block D1 to the interface block D3 and on the other side are provided a resist coating module 11 and a protective film forming module ITC As shown in Fig. The protective film forming module ITC supplies a predetermined treatment liquid onto the resist film to form a protective film for protecting the resist film. The lathe unit U includes a heating module and the selective exposure module 21. In the transfer region 64, a transfer arm F3, which is a transfer mechanism of the wafer W, is provided.

The other unit blocks E1, E2, E5, and E6 are configured similarly to the unit blocks E3 and E4 except that the chemical liquid to be supplied to the wafer W is different. The unit blocks E1 and E2 include an antireflection film forming module instead of the resist film forming module COT, and the unit blocks E5 and E6 include a developing module 12. [ In Fig. 24, the carrying arms of the unit blocks E1 to E6 are indicated as F1 to F6.

On the side of the carrier block D1 in the processing block D2, there are provided a tower T1 extending vertically over each unit block E1 to E6 and a transfer arm 65 serving as a transferable mechanism for transferring the wafer W to the tower T1 Is installed. A module installed at each height of the unit blocks E1 to E6 can transfer the wafer W to and from the respective transfer arms F1 to F6 of the unit blocks E1 to E6 have. In addition to the inspection module 41, the modules include a transfer module TRS installed at a height position of each unit block, a temperature control module CPL for adjusting the temperature of the wafer W, a buffer module for temporarily storing a plurality of wafers W, And a hydrophobic processing module for hydrophobizing the surface of the wafer W and the like. In order to simplify the explanation, the hydrophobic processing module, the temperature control module, and the buffer module are not shown.

The interface block D3 includes towers T2, T3, and T4 that extend up and down over the unit blocks E1 to E6. The interface block D3 includes an interface arm (not shown) for transferring the wafer W to the towers T2 and T3 An interface arm 67 as a transferable mechanism for transferring the wafer W to the tower T2 and the tower T4, an interface arm 67 for transferring the wafer W between the tower T2 and the exposure apparatus 13, And an arm 68 is provided.

The tower T2 includes a transfer module TRS, a buffer module that stores and holds a plurality of wafers W before exposure processing, a buffer module that stores a plurality of wafers W after exposure processing, and a temperature control module that performs temperature adjustment of the wafer W The buffer module and the temperature control module are not shown here. In the coating and developing apparatus 1, a place where the wafer W is loaded is referred to as a module. Although the modules are also provided in the towers T3 and T4, the description thereof is omitted here. The transport mechanism 14 described in Fig. 1 is constituted by the transport arms F1 to F6, the interface arms 61 to 63, the movement mounting mechanism 63, and the delivery arm 65.

The conveying path of the wafer W when the normal processing operation of the system consisting of the coating device, the developing device 1 and the exposure device 13 is performed will be described. The wafer W is transferred from the carrier C to the transfer module TRS0 of the tower T1 in the processing block D2 by the moving mounting mechanism 63. [ The wafer W is transferred from the transfer module TRS0 to the unit blocks E1 and E2. For example, when transferring the wafer W to the unit block E1, the transfer module TRS1 (transfer module capable of transferring the wafer W by the transfer arm F1) corresponding to the unit block E1 among the transfer modules TRS of the tower T1 The wafer W is transferred from TRS0. When transferring the wafer W to the unit block E2, the wafer W is transferred from the TRS0 to the transfer module TRS2 corresponding to the unit block E2 among the transfer modules TRS of the tower T1. The transfer of the wafer W is carried out by the transfer arm 65.

The thus allocated wafers W are transferred in the order of TRS1 (TRS2) - > antireflection film forming module - > heating module - TRS1 (TRS2), and then transferred by the transfer arm 65 to the transfer module TRS3 And a transfer module TRS4 corresponding to the unit block E4.

The wafers W allocated to the TRS 3 and the TRS 4 are arranged in the order of TRS 3 (TRS 4) → resist coating module 11 → heating module → selective exposure module 21 → protective film forming module ITC → heating module → transfer module TRS of the tower T 2 . Thereafter, this wafer W is carried into the exposure apparatus D4 by the interface arms 66 and 68 through the tower T3. The wafer W after exposure is transferred between the towers T2 and T4 by the interface arm 67 and transported to the transfer modules TRS5 and TRS6 of the tower T2 corresponding to the unit blocks E5 and E6, respectively. Thereafter, the wafer is returned to the carrier C through the moving mounting mechanism 63 after being transferred from the heating module to the developing module, the heating module, the inspection module 41 of the tower T1, and the transfer module TRS. When the positional correction operation of the linear exposure is performed, the wafer W is transported in the same transport path as the transport path except that it is not transported to the exposure apparatus 13. [

The control unit 10 of the coating and developing apparatus 1 will be further described. The control unit 10 includes a program, a memory, and a data processing unit including a CPU. The program is provided with a command for sending a control signal to each section of the coating and developing apparatus 1, controlling the operation thereof, and executing the respective steps. The program is stored in a storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk) and a memory card, and installed in the control unit 10.

N: Notch
W: Wafer
P1: center of the wafer
P2: Center of irradiation area
P3: center of rotation of the stage
1: Coating and developing device
10:
21: Selective exposure module
24: Moving and rotating mechanism
26: stage
31: Exposure
33: Mask
41: Inspection module
44: camera
100: Memory
101: irradiation area
102, 103: virtual straight line

Claims (12)

A light irradiation region for locally exposing the substrate is disposed in a first region of a first substrate of a first substrate and a second substrate on which a resist film is formed on a surface of each of the first region and the second region, Exposing the photoresist film to light,
Acquiring image data of the first substrate to acquire image data and acquiring positional data relating to a relationship between a position where the substrate is exposed, a position of the cutout, and a center position of the substrate, based on the image data;
Positioning the irradiation region on the second substrate in a second region whose position is corrected from an area corresponding to the first region, based on the position data;
A step of relatively moving the irradiation region with respect to the second substrate to expose a linear region including the second region,
A step of developing the substrate to remove the resist film in the linear region
And removing the resist film. The method according to claim 1,
And a step of developing the first substrate to remove the resist film in the first region before imaging the first substrate. 3. The method according to claim 1 or 2,
Before the irradiation region is positioned in the second region, a circumferential end portion of the second substrate is optically measured in order to obtain a displacement amount of the second substrate with respect to the cutting direction of the second substrate and the position of the reference, Comprising:
Wherein the step of positioning the irradiation region in the second region is performed based on the position data and the peripheral edge of the detected second substrate. 3. The method according to claim 1 or 2,
Optically detecting a circumferential end of the first substrate in order to obtain a displacement amount of the first substrate with respect to a cutting direction of the first substrate and a position of the reference,
Wherein the step of positioning the irradiation region in the second region is performed based on the position data and the peripheral edge of the detected first substrate. 5. The method of claim 4,
Detecting the inclination with respect to the reference direction of the irradiation area based on the image data and the detected peripheral edge of the first substrate;
The step of positioning the irradiation region in the second region includes:
And changing the direction of the irradiation region to expose the linear region so as to face the direction of the reference. 6. The method of claim 5,
And changing the direction of the irradiation region before exposing another region after exposing one region in the linear region. 6. The method of claim 5,
And changing a direction of the mask having an opening for transmitting light from the light source to the light source so as to change the direction of the irradiation region. An exposure section for forming a notch in the outer periphery and locally exposing a substrate on which a resist film is formed on the surface thereof,
An imaging unit for imaging the substrate to acquire image data;
A moving mechanism for relatively moving the irradiation region with respect to the substrate;
A development module for developing the substrate exposed by the exposure section to remove the resist film in the exposed area,
The method comprising the steps of: exposing a first region of a first substrate by the exposure section; imaging the first substrate to acquire image data; and based on the image data, A position of the second region is corrected based on the positional data with respect to the second substrate, the position of the second region being corrected from the region corresponding to the first region, A step of moving the irradiation region relative to the second substrate to expose a linear region including the second region, and a step of developing the substrate to form a resist A control section for outputting a control signal so that the steps of removing the film are performed in order,
And removing the resist film from the resist film. 9. The method of claim 8,
Wherein,
Wherein a control signal is outputted so that the step of developing the first substrate and removing the resist film in the first region is performed before imaging the first substrate. 10. The method according to claim 8 or 9,
A peripheral end detecting portion for optically detecting the peripheral end portion of the substrate is provided,
Wherein,
Before the irradiation region is positioned in the second region, a circumferential end portion of the second substrate is optically measured in order to obtain a displacement amount of the second substrate with respect to the cutting direction of the second substrate and the position of the reference, And the step of detecting,
Wherein the step of positioning the irradiation region in the second region outputs a control signal so as to be performed based on the position data and the detected peripheral edge of the second substrate. 10. The method according to claim 8 or 9,
A peripheral end detecting portion for optically detecting the peripheral end portion of the substrate is provided,
Wherein,
A step of optically detecting a circumferential end portion of the first substrate is performed in order to obtain a displacement amount of the first substrate with respect to a cutting direction of the first substrate and a position of the reference placed on the stage for exposing the substrate,
Wherein the step of positioning the irradiation region in the first region outputs a control signal so as to be performed based on the position data and the detected peripheral edge of the first substrate. A computer program for use in a resist film removing apparatus for locally exposing a substrate on which a resist film has been formed to remove a resist film in an exposed region,
The computer program is characterized in that step groups are provided to execute the resist film removing method according to any one of claims 1 to 3.

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