KR20160068581A - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

Provided is an organic light emitting display (LED) device. The organic LED device comprises an over coating layer, a first organic LED arranged in the over coating layer, a second organic LED, and a first partition arranged in the over coating layer between the first organic LED and the second organic LED. The first organic LED comprises a first lower organic LED, a first upper organic LED, and a first buffer layer. The first lower organic LED comprises a first lower anode, a first lower organic light emitting layer, and a first lower cathode. The first upper organic LED is arranged in the first lower organic LED and comprises the first upper anode, the first upper organic light emitting layer, and the first upper cathode. The first buffer layer is arranged between the first lower organic LED and the first upper organic LED. The second organic LED comprises a second lower organic LED, a second upper organic LED, and a second buffer layer. The second lower organic LED comprises a second lower anode, a second lower organic light emitting layer, and a second lower cathode. The second upper organic LED is arranged in the second lower organic LED and comprises a second upper anode, a second upper light emitting layer, and a second upper cathode. The second buffer layer is arranged between the second lower organic LED and the second upper organic LED. The first upper organic light emitting layer and the second upper organic light emitting layer are connected to one layer. According to an embodiment of the present invention, the penetrability of the organic LED device can be improved by increasing a surface of a penetration region in the organic LED device.

Description

Technical Field [0001] The present invention relates to an organic light emitting diode (OLED) display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED) display and a method of manufacturing the same. More particularly, the present invention relates to an organic light emitting display and a method of manufacturing the same.

An organic light emitting display (OLED) is a self-luminous display device, and unlike a liquid crystal display (LCD), a separate light source is not required, so that it can be manufactured in a light and thin shape. Further, the organic light emitting display device is not only advantageous from the viewpoint of power consumption by low voltage driving, but also excellent in color implementation, response speed, viewing angle, and contrast ratio (CR), and is being studied as a next generation display.

In recent years, there has been an attempt to fabricate an organic light emitting diode display as a transparent organic light emitting display capable of transmitting light according to various demands of users. A pixel of a transparent organic light emitting device is divided into a light emitting region which is a region where an organic light emitting element emits light and displays an image and a transmissive region which is a region transmitting external light, Transparency in the display device is ensured through the transmissive area.

The sizes of the pixels constituting the transparent organic light emitting device are the same, and when the pixel size is constant, the light emitting region and the transmissive region are efficiently arranged, and the light emitting region and the transmissive region are maximally ensured. However, when the size of the area occupied by one pixel is constant, the transmissive area is relatively reduced when the light emitting area is widely expanded. Accordingly, there is a problem in expanding the emission region to the area of the transmissive region while securing a certain level of emission region in the transparent organic light emitting display device.

Therefore, there is a need for a method that can improve the aperture ratio of the transmissive area while maintaining the aperture ratio of the light emitting area in the transparent organic light emitting display.

[Related Technical Literature]

One. Organic electroluminescence display device and method of manufacturing the same (Patent Application No. 10-2012-0158717)

2. An active matrix organic electroluminescent display device (Patent Application No. 10-2003-0066038)

The inventors of the present invention have proposed a new structure of an organic light emitting diode display including a stack structure of organic light emitting diodes using a barrier structure in order to solve the problem of difficulty in securing a transmissive region in the organic light emitting display as described above And a manufacturing method thereof.

Accordingly, an object of the present invention is to provide an organic light emitting display device and a method of manufacturing an organic light emitting display device capable of emitting three colors with only two light emitting regions by independently driving an upper organic light emitting device and a lower organic light emitting device .

Another problem to be solved by the present invention is to provide an organic light emitting display device and an organic light emitting display device manufacturing method which can extend the area of the transmissive area while maintaining or expanding the area of the light emitting area including only two light emitting areas will be.

The problems of the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

An organic light emitting display according to an embodiment of the present invention is provided. The organic light emitting diode display includes a first barrier rib disposed on an overcoat layer between an overcoat layer, a first organic light emitting diode and a second organic light emitting diode disposed on the overcoat layer, and a first organic light emitting diode and a second organic light emitting diode. do. The first organic light emitting device includes a first lower organic light emitting device, a first upper organic light emitting device, and a first buffer layer. The first lower organic light emitting device includes a first lower anode, a first lower organic emission layer, and a first lower cathode. The first upper organic light emitting device is disposed on the first lower organic light emitting device and includes a first upper anode, a first upper organic emission layer, and a first upper cathode. The first buffer layer is disposed between the first lower organic light emitting device and the first upper organic light emitting device. The second organic light emitting device includes a second lower organic light emitting device, a second upper organic light emitting device, and a second buffer layer. The second lower organic light emitting device includes a second lower anode, a second lower organic emission layer, and a second lower cathode. The second upper organic light emitting device is disposed on the second lower organic light emitting device, and includes a second upper anode, a second upper organic light emitting layer, and a second upper cathode. The second buffer layer is disposed between the second lower organic light emitting device and the second upper organic light emitting device. The first upper organic emission layer and the second upper organic emission layer are connected in a single layer. In the OLED display according to an embodiment of the present invention, the transmissive area of the transmissive area is increased to improve the transmissivity of the OLED display.

According to another aspect of the present invention, there is provided a semiconductor device comprising: a lower bank layer disposed to cover a side portion of a first lower anode and a second lower anode, respectively; and an upper bank layer disposed on a portion of the lower bank layer, Further comprising:

According to still another aspect of the present invention, the first upper anode and the second upper anode are electrically connected.

According to another aspect of the present invention, there is provided a plasma display panel further comprising a first connection anode disposed under the first barrier rib and electrically connecting the first upper anode and the second upper anode.

According to another aspect of the present invention, the first upper organic emission layer and the second upper organic emission layer are formed of a material for emitting the same color.

According to another aspect of the present invention, the first upper anode and the second upper anode are connected to the same thin film transistor.

According to another aspect of the present invention, the first upper anode and the second upper anode are formed of a transparent conductive layer.

According to another aspect of the present invention, the first lower anode and the second lower anode are made of the same material as the first upper anode and the second upper anode.

According to another aspect of the present invention, the first lower anode and the second lower anode further include a reflective layer.

According to another aspect of the present invention, the first buffer layer and the second buffer layer are made of the same material as at least one of the first lower organic emission layer, the second lower organic emission layer, the first upper organic emission layer, and the second upper organic emission layer .

According to another aspect of the present invention, the organic light emitting device further includes a second partition at one side of the first organic light emitting device or the second organic light emitting device.

According to another aspect of the present invention, there is provided a plasma display panel further comprising a first connection anode disposed under the first barrier rib and a second connection anode disposed under the second barrier rib, wherein one of the first connection anode and the second connection anode And the second upper anode is electrically connected to the first upper anode, and the other is electrically connected to the second upper anode.

According to another aspect of the present invention, the first connection anode and the second connection anode are electrically connected to different thin film transistors.

According to another aspect of the present invention, the first upper organic emission layer and the second upper organic emission layer are formed of materials for emitting different colors.

According to another aspect of the present invention, there is provided a semiconductor device comprising: a lower bank layer disposed to cover a side portion of a first lower anode and a second lower anode, respectively; and a lower bank layer disposed on a portion of the lower bank layer and covering the first bank and the second bank And further comprising an upper bank layer disposed thereon.

According to another aspect of the present invention, there is provided an organic light emitting display comprising: a light emitting region including a first organic light emitting element and a second organic light emitting element; and a transmissive region transmitting external light and disposed apart from the light emitting region .

According to another embodiment of the present invention, there is provided a method of fabricating an OLED display device, comprising: forming a first lower anode, a first connection anode, and a second lower anode spaced apart from each other on an overcoat layer for planarizing an upper portion of the TFT; Forming a lower bank layer to cover the anode and the second lower anode side, forming a first bank on the first connection anode, forming a first lower organic emission layer on at least the first lower anode, Forming a second lower organic emission layer on the second lower anode, forming a second lower cathode on the first lower cathode and the second lower organic emission layer on the first lower organic emission layer, Forming a second buffer layer on the first buffer layer and the second lower cathode, forming a first upper anode on the first buffer layer and a second upper anode on the second buffer layer, Forming an upper bank layer on the lower bank layer, the lower bank layer, and the first bank, forming a first upper organic emission layer and a second upper organic emission layer on at least the first upper anode and the second upper anode, And forming a first upper cathode and a second upper cathode on the upper organic emission layer, the second upper organic emission layer, and the upper bank layer. According to another exemplary embodiment of the present invention, an organic light emitting device capable of independently emitting light in one light emitting region may be formed in a stack structure, Light of different colors can be emitted through the device, and the light emitting region can be expanded to improve the aperture ratio of the light emitting region.

According to another aspect of the present invention, forming the upper bank layer includes forming an upper bank layer using ink-jet printing or nozzle printing.

According to another aspect of the present invention, the upper bank layer is formed of at least one of polyimide, polyacryl, and photoresist.

According to still another aspect of the present invention, the step of forming the first upper anode and the second upper anode includes electrically connecting the first upper anode and the second upper anode to the first connection anode do.

According to still another aspect of the present invention, the step of forming the first lower anode, the first connection anode and the second lower anode includes forming a second connection anode simultaneously with the first lower anode, the first connection anode and the second lower anode The method comprising the steps of:

According to another aspect of the present invention, the forming of the first bank includes forming the second bank on the second connection anode concurrently with the first bank.

According to still another aspect of the present invention, the step of forming the first upper anode and the second upper anode includes the steps of: one of the first upper anode and the second upper anode being electrically connected to the first connection anode; And electrically connecting the first and second connection anodes to each other.

The details of other embodiments are included in the detailed description and drawings.

The present invention relates to an organic light emitting diode (OLED) display device in which two light emitting regions and one transmissive region are formed per pixel and an organic light emitting element arranged in a stacked structure in one light emitting region can be independently driven Can be produced.

In addition, the present invention can manufacture an organic light emitting display in which the transmissive area is enlarged to improve the transmittance.

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the specification.

1 is a schematic plan view for explaining an organic light emitting display according to an embodiment of the present invention.
2 is a cross-sectional view of the organic light emitting diode display cut along the line II-II 'of FIG.
3 is a schematic plan view illustrating an OLED display according to another embodiment of the present invention.
4 is a cross-sectional view of the organic light emitting display device taken along line IV-IV 'of FIG.
FIG. 5 is a flowchart illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention. Referring to FIG.
6A to 6E are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. Where the terms "comprises", "having", "done", and the like are used in this specification, other portions may be added unless "only" is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

It will be understood that when an element or layer is referred to as being on another element or layer, it encompasses the case where it is directly on or intervening another element or intervening another element or element.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

Like reference numerals refer to like elements throughout the specification.

The sizes and thicknesses of the individual components shown in the figures are shown for convenience of explanation and the present invention is not necessarily limited to the size and thickness of the components shown.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other partially or entirely and technically various interlocking and driving is possible as will be appreciated by those skilled in the art, It may be possible to cooperate with each other in association.

Various embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

1 is a schematic plan view for explaining an organic light emitting display according to an embodiment of the present invention. 2 is a cross-sectional view of the organic light emitting diode display cut along the line II-II 'of FIG.

1, an OLED display 100 includes a plurality of pixels PX1, each pixel PX1 includes a first light emitting region EAA, a second light emitting region EAB, Area TA. Here, the first luminescent region EAA and the second luminescent region EAB are separated by the barrier ribs 165. The first light emitting region EAA includes a first upper light emitting region UEAA and a first lower light emitting region LEAA and a second light emitting region EAB includes a second upper light emitting region UEAB and a second lower light emitting region E- Area (LEAB). Also, the first lower light emitting area LEAA may be included in the first upper light emitting area UEAA, and the second lower light emitting area LEAB may be included in the second upper light emitting area UEAB. In this specification, a transparent organic light emitting display device including a transmissive region together with a light emitting region will be described as a reference, but the same except for the transmissive region can be applied to an organic light emitting display device having no transmissive region.

Referring to FIG. 2, the first upper light emitting area UEAA is a region in which light emitted by the first upper organic light emitting device 150A is emitted, and the first lower light emitting area LEAA is a region Emitting region 130A is emitted. The second upper light emitting area UEAB is a region in which light emitted by the second upper organic light emitting device 150B is emitted and the second lower light emitting area LEAB is a region in which light emitted by the second upper organic light emitting device 150B is emitted. Is a region in which light emitted by the light source is emitted.

Referring to FIG. 2, a thin film transistor (TFT) is disposed on a substrate 110 in the OLED display 100. The thin film transistor TFT is a driving thin film transistor for controlling the driving of the organic light emitting element and is arranged to correspond to the first light emitting area EAA, the second light emitting area EAB, and the lower part of the partition 165. Although only the driving thin film transistor for driving the organic light emitting device is shown in FIG. 2, the thin film transistor may further include additional thin film transistors for the first light emitting region EAA, the second light emitting region EAB, and the barrier ribs 165. In order to planarize the upper surface of the thin film transistor (TFT), an overcoat layer 120 is arranged to cover the thin film transistor (TFT).

Referring to FIG. 2, the first organic light emitting devices 130A and 150A are disposed on an overcoat layer 120 for planarizing a top of a thin film transistor (TFT) in a first light emitting area EAA. Specifically, a first buffer layer 140A is disposed on the first lower organic light emitting device 130A, and a first upper organic light emitting device 150A is disposed on the first buffer layer 140A. Here, the first organic light emitting devices 130A and 150A include a first lower organic light emitting device 130A and a first upper organic light emitting device 150A.

The first lower organic light emitting device 130A includes a first lower anode 131A, a first lower organic emission layer 132A, and a first lower cathode 133A. Specifically, the first lower organic emission layer 132A is disposed on the first lower anode 131A, and the first lower cathode 133A is disposed on the first lower organic emission layer 132A.

The first lower anode 131A is disposed on the overcoat layer 120 in the first light emitting area EAA. Specifically, the first lower anode 131A is arranged to be electrically connected to the thin film transistor TFT through a contact hole of the overcoat layer 120 in the first emission region EAA.

The first lower anode 131A is made of a conductive material having a high work function in order to supply holes to the first lower organic emission layer 132A. For example, the first lower anode 131A may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide, tin oxide, But not limited to, a transparent conductive oxide (TCO) including a combination of a transparent conductive oxide (TCO). Here, the first lower anode 131A may further include a reflective layer to emit upward light emitted from the first lower organic emission layer 132A. That is, the first lower anode 131A may emit light by arranging a reflective layer below the transparent conductive layer.

The first lower organic emission layer 132A recombines holes and electrons to form an exciton to emit light. Here, the first lower organic emission layer 132A is made of an organic material that emits one of red (R) light, green (G) light, and blue (B) light.

The first lower cathode 133A is made of a conductive material having a low work function to supply electrons to the first lower organic emission layer 132A. For example, the first lower cathode 133A may be formed of an alloy of silver (Ag), titanium (Ti), aluminum (Al), molybdenum (Mo), or an alloy of silver (Ag) and magnesium (Mg) But are not limited to, carbon nanotubes (CNTs) and / or graphene-based materials. As such, the first lower cathode 133A may be made of a material having a low step coverage. Since the first lower cathode 133A has a low step coverage, the first lower organic light emitting layer 132A is formed only on a part of the lower bank layer 161 adjacent to the first bank 165 by the first bank 165 .

The first buffer layer 140A is disposed between the first lower organic light emitting device 130A and the first upper organic light emitting device 150A. In detail, the first buffer layer 140A is disposed on the first lower cathode 133A to isolate the first lower organic light emitting device 130A and the first upper organic light emitting device 150A. That is, the first buffer layer 140A electrically separates the voltage applied to the first lower cathode 133A and the voltage applied to the first upper anode 151A, thereby forming the first lower organic light emitting device 130A and the first So that the upper organic light emitting device 150A can be independently driven.

The first buffer layer 140A is made of an organic material having an insulating property. Specifically, the first buffer layer 140A is the same as at least one of the first lower organic emission layer 132A, the second lower organic emission layer 132B, the first upper organic emission layer 152A, and the second upper organic emission layer 152B. ≪ / RTI > Here, the first buffer layer 140A may not emit light.

The first upper organic light emitting device 150A includes a first upper anode 151A, a first upper organic emission layer 152A, and a first upper cathode 153A. Specifically, a first upper organic emission layer 152A is disposed on the first upper anode 151A, and a first upper cathode 153A is disposed on the first upper organic emission layer 152A.

The first upper anode 151A may be made of the same material as the first lower anode 131A. Here, the first upper anode 151A does not include a reflective layer. The first upper anode 151A may be made of a transparent conductive oxide (TCO) material which is the same material as the first lower anode 131A, which corresponds to a material with high step coverage. The first upper anode 151A is conformally formed along the shape of the lower bank layer 161 and is electrically connected to the first connection anode 155 disposed under the first bank 165 .

The first upper organic emission layer 152A may be formed of an organic material that emits one of red light, green light, and blue light. Here, the first upper organic emission layer 152A is made of an organic material that emits light of a color different from that of light emitted by the first lower organic emission layer 132A. In particular, the first upper organic emission layer 152A may be formed of an organic material that emits blue light.

The first upper light emitting region emits light in a region wider than the region where light is emitted in the first lower light emitting region. At present, a fluorescent organic material is used to form blue light, which has a longer lifetime even if the luminous efficiency is somewhat lower than that of a phosphorescent organic material having excellent luminous efficiency. Therefore, by allowing the light of the other color to emit in the first lower light emitting region and causing the blue light to emit in the first upper light emitting region, the lifetime and luminance of the blue light in the first upper light emitting region are different from each other It is possible to have a level similar to the lifetime and the luminance of the color light.

The first upper organic emission layer 152A may be conformally disposed along the top of the first upper anode 151A and the upper bank layer 163.

The first upper cathode 153A is conformally disposed along the shape of the upper portion of the first upper organic emission layer 152A and may be made of the same material as the first lower cathode 133A.

Referring to FIG. 2, a thin film transistor (TFT), an overcoat layer 120 for planarizing a top of a thin film transistor (TFT), a second organic light emitting element 130B , 150B are disposed. The second organic light emitting devices 130B and 150B disposed in the second light emitting area EAB include first organic light emitting devices 130A and 130B disposed in the first light emitting area EAA with reference to the first bank 165, 150A. The configuration and arrangement of the second organic light emitting devices 130B and 150B are substantially the same as those of the first organic light emitting devices 130A and 150A.

The second lower anode 131B is formed on the overcoat layer 120 in the second light emitting region EBB through the contact hole of the overcoat layer 120 like the first lower anode 131A, And is arranged to be electrically connected to the transistor (TFT).

The second lower organic emission layer 132B is made of an organic material that emits one of red (R) light, green (G) light, and blue (B) light. Here, the second lower organic emission layer 132B is formed of an organic material that emits light different from that of the first lower organic emission layer 132A, the first upper organic emission layer 152A, and the second upper organic emission layer 152B. For example, when the first lower organic emission layer 132A is formed of an organic material that emits red light and the first upper organic emission layer 152A and the second upper organic emission layer 152B are organic materials that emit blue light And the second lower organic emission layer 132B may be formed of an organic material emitting green light.

The second lower cathode 133B may be made of a material having a low step coverage such as the first lower cathode 133A and may be made of the same material as the second lower organic emission layer 132B But may be disposed only on a part of the lower bank layer 161 adjacent to the first bank 165.

The second buffer layer 140B is formed of the same material as at least one of the first lower organic emission layer 132A, the second lower organic emission layer 132B, the first upper organic emission layer 152A, and the second upper organic emission layer 152B. And may be made of the same material as the first buffer layer 140A. Here, the second buffer layer 140B may not emit light.

The second upper anode 151B may be made of the same material as the first upper anode 151A. Specifically, the second upper anode 151B may be made of a transparent conductive oxide (TCO) having a high step coverage. The second upper anode 151B is disposed to be electrically connected to the first connection anode 155 disposed under the first partition 165 and the first upper anode 151A is also connected to the first connection anode 155 The first upper anode 151A and the second upper anode 151B are electrically connected through the first connection anode 155. [

The second upper organic light emitting layer 152B is formed of the same material as that of the first upper organic light emitting layer 152A and the second upper organic light emitting layer 152B is formed of the light emitted by the first lower organic light emitting layer 132A and the second lower organic light emitting layer 132B And is made of an organic material that emits light of a color different from that of the color. The second upper organic emission layer 152B may be formed of an organic material that emits light of the same color as that of the first upper organic emission layer 152A. For example, when the first lower organic emission layer 132A is formed of an organic material that emits red light and the second lower organic emission layer 132B is formed of an organic material that emits green light, May be made of an organic material that emits blue light, which is the same material as the first upper organic emission layer 152A.

The second upper organic emission layer 152B is arranged to be connected to the first upper organic emission layer 152A on the upper bank layer 163. That is, the second upper organic emission layer 152B is formed of one layer with the first upper organic emission layer 152A, and is formed of the same material. Accordingly, the second upper organic emission layer 152B is formed of a material that emits one light together with the first upper organic emission layer 152A, and the first upper emission area UEAA and the second upper emission area UEAB, The light of the same color can be emitted. For example, the second upper organic emission layer 152B may be formed of an organic material that emits blue light, such as the first upper organic emission layer 152A.

As the light of the same color is emitted in the first upper light emitting area UEAA and the second upper light emitting area UEAB, the color of the light emitted from the first upper light emitting area UEAA and the second upper light emitting area UEAB The amount of light emission for the light emitting diode can be greatly increased. Accordingly, when organic materials emitting blue light having low luminous efficiency generally constitute the first upper organic light emitting layer 152A and the second upper organic light emitting layer 152B, the amount of light of blue light having low light emitting efficiency may be increased , The luminance of blue light may increase or the lifetime of the OLED display 100 may increase.

The second upper cathode 153B is arranged to be connected to the first upper cathode 153A on the upper bank layer 163 as disposed on the second upper organic emission layer 152B. That is, the second upper cathode 153B may be formed as a single layer with the first upper cathode 153A and may be a common electrode.

Referring to FIG. 2, the lower bank layer 161 is disposed on the overcoat layer 120 so as to cover the sides of the first lower anode 131A and the second lower anode 151A. Accordingly, the lower bank layer 161 can define the first lower light emitting area LEAA and the second lower light emitting area LEAB.

The lower bank layer 161 is made of a photoresist material. For example, the lower bank layer 161 may be made of a positive photoresist material. Accordingly, the lower bank layer 161 may have a regular taper shape.

Referring to FIG. 2, the first connection anode 155 is disposed on the overcoat layer 120 so as to be spaced apart from the first lower anode 131A and the second lower anode 131B. Specifically, the first connection anode 155 is disposed under the first partition 165 and is arranged to electrically connect the first upper anode 151A and the second upper anode 151B. The first connection anode 155 is electrically connected to the thin film transistor TFT through the contact hole of the overcoat layer 120 between the first emission region EAA and the second emission region EAB. Accordingly, the first upper anode 151A and the second upper anode 151B are electrically connected to the thin film transistors (TFTs) disposed below the first connection anodes 155.

The first connection anode 155 is made of a conductive material having a high work function as the first lower anode 131A and the second lower anode 131B. Also, the first connection anode 155 may be made of the same material as the first upper anode 151A and the second upper anode 151B.

Referring to FIG. 2, the first barrier rib 165 is disposed on the first connection anode 155. The first barrier ribs 165 are disposed on the overcoat layer 120 between the first organic light emitting devices 130A and 150A and the second organic light emitting devices 130B and 150B.

The first barrier rib 165 is made of a photoresist which is an insulating material. Specifically, the barrier rib 165 may be formed of a negative photoresist. Accordingly, the first barrier ribs 165 may be formed in an inverted tapered shape. The first lower organic light emitting layer 132A, the second lower organic light emitting layer 132B, and the second lower organic light emitting layer 132 are formed on the first connection anode 155 along the side of the first bank 165 by the reverse tapered shape of the first bank 165. It becomes difficult for the lower cathode 133A, the second lower cathode 133B, the first buffer layer 140A and the second buffer layer 140B to be disposed on the first connection anode 155. [ Only the first upper anode 151A and the second upper anode 151B may be arranged to be electrically connected to the first connection anode 155 by the first barrier rib 165. [

Referring to FIG. 2, the upper bank layer 163 is disposed on a part of the lower bank layer 161, and is disposed to cover the first bank 165. Specifically, the upper bank layer 163 includes a first buffer layer 140A and a second buffer layer 140B disposed on the side portions of the first upper anode 151A and the second upper anode 151B, the lower bank layer 161, And the first barrier ribs 165. In this embodiment, A first upper organic emission layer 152A, a second upper organic emission layer 152B, a first upper cathode 153A, and a second upper cathode 153B are disposed on the upper bank layer 163.

The upper bank layer 163 may define a first upper light emitting area UEAA and a second upper light emitting area UEAB and the first upper light emitting area UEAA may define wider than the first lower light emitting area LEAA. And the second upper emission area UEAB may be defined to be wider than the second lower emission area LEAB. Accordingly, the first light emitting region EAA and the second light emitting region EAB can be distinguished from one pixel PX1 by the upper bank layer 163.

The upper bank layer 163 may be made of an organic material and may be made of at least one material selected from the group consisting of polyimide, polyacryl, and photoresist. The material forming the upper bank layer 163 and the forming method thereof will be described later with reference to FIGS. 5 to 6F.

The first emission region EAA and the second emission region EAB are divided by the first barrier rib 165 and the first upper anode 151A is divided into the first emission region EAA and the second emission region EAB by the first barrier rib 165. In the OLED display 100 according to an exemplary embodiment of the present invention, And the second upper anode 151B are electrically connected to the first connection anode 155 disposed under the first barrier rib 165. [ Specifically, the first barrier rib 165 is formed between the first light emitting region EAA including the first lower organic light emitting device 130A and the first upper organic light emitting device 150A and the second lower organic light emitting device 130B, And a second light emitting region EAB including a second upper organic light emitting device 150B. The first upper anode 151A and the second upper anode 151B are connected to the first connection anode 155 and the first connection anode 155 by the first barrier rib 165, As shown in FIG. Accordingly, the first upper organic light emitting device 150A and the second upper organic light emitting device 150B can simultaneously emit light of the same color by a thin film transistor (TFT) disposed under the first connection anode 155 have. That is, light of different colors is emitted through the first lower light emitting area LEAA and the second lower light emitting area LEAB, and light of different colors is emitted through the first upper light emitting area UEAA and the second upper light emitting area UEAB Color light can be emitted at the same time. Accordingly, the first lower light emitting area LEAA, the second lower light emitting area LEAB, and the upper light emitting areas UEAA and UEAB are independently driven and emit light of different colors, respectively.

In the OLED display 100 according to an exemplary embodiment of the present invention, only the first emission region EAA and the second emission region EAB may be disposed in one pixel PX1. The area of the transmissive region TA can be increased by arranging only two light emitting regions in one pixel PX1 and the transmittance of the organic light emitting display 100 is improved.

3 is a schematic plan view illustrating an OLED display according to another embodiment of the present invention. 4 is a cross-sectional view of the organic light emitting display device taken along line IV-IV 'of FIG. The OLED display 300 of FIG. 3 is different from the OLED display 100 of FIG. 1 in that the structure of the second connection anode 355 and the second barrier rib 365 is added, , So redundant explanations are omitted.

3 and 4, in the OLED display 300, each pixel PX3 includes a first light emitting area EAA, a second light emitting area EAB, and one transmissive area TA . Here, the first luminescent region EAA and the second luminescent region EAB are separated by the first partition wall 165 and the second partition wall 365. That is, the first barrier rib 165 may be disposed on one side of the first emission region EAA and the second barrier rib 365 may be disposed on one side of the second emission region EAB.

Referring to FIG. 4, the second connection anode 355 is disposed on the overcoat layer 120 away from the first lower anode 131A. Specifically, the second connection anode 355 is arranged to be electrically connected to the thin film transistor under the second bank 365. The second connection anode 355 is electrically connected to the first upper anode 151A so that the first upper anode 151A is electrically connected to the thin film transistor TFT disposed below the second connection anode 355 Lt; / RTI >

The second connection anode 355 is made of the same material as the first connection anode 155. That is, the second connection anode 355 is made of a conductive material having a high work function, like the first connection anode 155, the first lower anode 131A, and the second lower anode 131B. In addition, the second connection anode 355 may be made of the same material as the first upper anode 151A and the second upper anode 151B.

Referring to FIGS. 3 and 4, the second bank 365 is disposed on the second connection anode 355. Specifically, the second bank 365 is disposed on the overcoat layer 120 away from one side of the first organic light emitting devices 130A and 150A. For example, the second barrier ribs 365 are disposed apart from the left side of the first emission region EAA, and the first barrier ribs 165 are disposed between the first emission region EAA and the second emission region EAB .

The second barrier ribs 365 are made of the same material as the first barrier ribs 165. The first lower organic emission layer 132A and the first lower cathode 133A are formed on the second connection anode 355 along the side of the second partition 165 by the reverse tapered shape of the second partition 365. [ And the first buffer layer 140A are difficult to be placed on the second connection anode 355. [ The second lower organic emission layer 132B, the second lower cathode 133B and the second buffer layer 140B are formed on the first connection anode 155 by the first partition 165 to the first connection anode 155 As shown in Fig. That is, the second upper anode 151B may be arranged to be electrically connected to the first connection anode 155 by the first partition 165, and the second upper anode 151B may be electrically connected to the first connection anode 155 by the second partition wall 365. [ 151A may be arranged to be electrically connected to the second connection anode 355. The upper bank layer 163 is disposed on a part of the lower bank layer 161 and is disposed so as to cover the second bank 365 as well.

4, a second connection anode 355 is electrically connected to the first top anode 151A, and a first connection anode 155 is electrically connected to the second top anode 151B. The first upper anode 151A is electrically connected to the thin film transistor disposed under the second partition wall 365 through the second connection anode 355 and the second upper anode 151B is electrically connected to the first partition 165 And a first connection anode 155. The first connection anode 155 is electrically connected to the thin film transistor. That is, the first upper organic light emitting device 150A is controlled by a thin film transistor disposed under the second bank 365, and the second upper organic light emitting device 150B is controlled by the thin film transistor disposed under the first bank 165 . In other words, the first upper organic light emitting device 150A and the second upper organic light emitting device 150B may be electrically connected to different thin film transistors and independently driven.

Also, the first upper organic emission layer 152A and the second upper organic emission layer 152B may be made of materials emitting light of different colors. In this case, the light emitted from the first upper light emitting area UEAA and the second upper light emitting area UEAB can be independently emitted and emitted in different colors. That is, light of different colors is emitted in the first upper light emitting area UEAA and the second upper light emitting area UEAB as well as the first lower light emitting area LEAA and the second lower light emitting area LEAB, And may be independently emitted by the thin film transistor.

The second barrier ribs 365 and the second connection anodes 355 are disposed in the organic light emitting display 300 according to another embodiment of the present invention to form the first upper light emitting area UEAA and the first lower light emitting area LEAA, The second upper light emitting area LEAA and the second lower light emitting area LEAB are independently driven and emit different colors. Specifically, the first barrier rib 165 and the first connection anode 155 are disposed between the first emission region EAA and the second emission region EAB, and the second barrier rib 365 and the second connection anode 355 are disposed apart from one side of the first light emitting area EAA. Also, only the second upper anode 151B is electrically connected to the thin film transistor (TFT) disposed under the first connection anode 155 through the first connection anode 155 by the first barrier rib 165, Only the first upper anode 151A is electrically connected to the thin film transistor (TFT) disposed under the second connection anode 355 through the second connection anode 255 by the two barrier ribs. The first upper organic light emitting device 150A is emitted by the thin film transistor TFT disposed under the second connection anode 355 and the second upper organic light emitting device 150B is emitted by the first connection anode 155 (TFTs) disposed under the TFTs. That is, the first upper organic light emitting device 150A, the first lower organic light emitting device 130A, the second upper organic light emitting device 150B, and the second lower organic light emitting device 130B are formed of different thin film transistors (TFT) Lt; / RTI > Accordingly, each of the first lower light emitting area LEAA, the second lower light emitting area LEAB, the first upper light emitting area UEAA, and the second lower light emitting area UEAB can be independently emitted, The light can be emitted.

In the OLED display 300 according to another embodiment of the present invention, only the first emission region EAA and the second emission region EAB may be disposed in one pixel PX3. The area of the transmissive region TA can be increased and the transmittance of the organic light emitting display 300 is improved by arranging only two light emitting regions in one pixel PX3.

FIG. 5 is a flowchart illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention. Referring to FIG. 6A to 6E are cross-sectional views illustrating a method of manufacturing an organic light emitting display according to an embodiment of the present invention. 6A to 6E are process cross-sectional views for explaining a method of manufacturing the organic light emitting display 100 shown in FIG. 1, and redundant description of the components described with reference to FIG. 1 will be omitted.

First, the first lower anode 131A, the first connection anode 155 and the second lower anode 131B are formed on the overcoat layer 120 for planarizing the upper portion of the thin film transistor TFT (S510) .

Referring to FIG. 6A, a first lower anode 131A, a first connection anode 155, and a second lower anode 131B are formed on each of the thin film transistors (TFT) on the overcoat layer 120. FIG. That is, each of the thin film transistors TFT is electrically connected to the first lower anode 131A, the first connection anode 155 and the second lower anode 131B through the contact holes of the overcoat layer 120, respectively. Here, the first lower anode 131A, the first connection anode 155 and the second lower anode 131B are patterned using FMM (fine metal mask) to be formed on the overcoat layer 120 .

Subsequently, a lower bank layer 161 is formed to cover the sides of the first lower anode 131A and the second lower anode 131B (S515). Then, a first barrier rib 165 is formed on the first connection anode 155 (S520).

Referring to FIG. 6B, the lower bank layer 161 is formed to have a constant taper shape after patterning using a positive photoresist. The first bank 165 is formed to have a reverse taper shape after patterning using a negative photoresist. The first barrier ribs 165 may be formed on the first connection anodes 155 between the lower bank layers 161 and the height of the first barrier ribs 165 may be higher than the lower bank layer 161.

Subsequently, a first lower organic emission layer 132A is formed on at least the first lower anode 131A (S525). Subsequently, a second lower organic emission layer 132B is formed on at least the second lower anode 131B (S530). Subsequently, a second lower cathode 133B is formed on the first lower cathode 133A and the second lower organic emission layer 132B on the first lower organic emission layer 132A (S535). Next, a first buffer layer 140A is formed on the first lower cathode 133A and a second buffer layer 140B is formed on the second lower cathode 133B (S540).

Referring to FIG. 6C, the first lower organic emission layer 132A and the second lower organic emission layer 132B are formed of different materials. Specifically, the first lower organic emission layer 132A and the second lower organic emission layer 132B are sequentially disposed of different materials by patterning. For example, in the first lower organic emission layer 132A, the organic material that emits red light is first patterned to be formed on the first lower anode 131A, and the second lower organic emission layer 132B is formed on the first lower organic emission layer 132A, The organic material emitting green light may be patterned and formed on the second lower anode 131B. Here, the order in which the first lower organic emission layer 132A and the second lower organic emission layer 132B are patterned and formed may be changed and is not limited by the illustrative description. The first lower organic emission layer 132A and the second lower organic emission layer 132B may be patterned and partially formed on the lower bank layer 161. [ The first lower organic emission layer 132A and the second lower organic emission layer 132B may be partially disposed on the first partition 165 but may be disposed on the first connection anode 155 by the first partition 165 Do not.

The first lower cathode 133A and the second lower cathode 133B may be formed on the first lower organic emission layer 132A, the second lower organic emission layer 132B and the first partition 165 without being patterned. The first lower cathode 133A and the second lower cathode 133B are formed of materials having poor step coverage so that the first lower anode 133A and the second lower cathode 133B are formed on the first connection anode 155 disposed under the first partition 615 Or only a small portion may be formed on the first connection anode 155. [

The first buffer layer 140A and the second buffer layer 140B may be formed on the first lower cathode 133A, the second lower cathode 133B and the first bank 165 without being patterned. Since the first buffer layer 140A and the second buffer layer 140B are made of materials having poor step coverage, the first buffer layer 140A and the second buffer layer 140B are not formed on the first connection anode 155 disposed under the first barrier rib 615, May be formed on the first connection anode (155).

Next, a first upper anode 151A is formed on the first buffer layer 140A and a second upper anode 151B is formed on the second buffer layer 140B (S545).

Referring to FIG. 6D, the first upper anode 151A and the second upper anode 151B are patterned on the first buffer layer 140A and the second buffer layer 140B. Specifically, the first upper anode 151A and the second upper anode 151B may be simultaneously formed by FMM patterning. Each of the first upper anode 151A and the second upper anode 151B may be patterned to be formed on the lower bank layer 161 formed at a position distant from the first bank 165.

The first upper anode 151A and the second upper anode 151B may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide, tin oxide ), And combinations thereof, which correspond to materials with high step coverage. The first upper anode 151A and the second upper anode 151B are conformally formed on the first buffer layer 140A and the second buffer layer 140B along the shape of the lower bank layer 161, And may be formed to be electrically connected to the first connection anode 155 disposed under the first barrier rib 165.

The first upper anode 151A and the second upper anode 151B are formed of a single material and are electrically connected to the first connection anode 155 to form a thin film transistor TFT). Accordingly, the first upper anode 151A and the second upper anode 151B can receive a voltage by the same thin film transistor (TFT).

Next, an upper bank layer 163 is formed on the lower bank layer 161 and the first bank 165 (S550).

Referring to FIG. 6E, the upper bank layer 163 is formed to cover the upper portion of the lower bank layer 161 and the first bank 165. Specifically, the upper bank layer 163 may be formed using ink-jet printing or nozzle printing, and may be formed by patterning using a mask.

The upper bank layer 163 is made of at least one of polyimide, polyacryl, and photoresist. For example, the upper bank layer 163 may be formed by inkjet printing or nozzle printing of polyimide, polyacryl, and the arrangement and shape of the upper bank layer 163 may be determined by patterning using a mask. In addition, the upper bank layer 163 may be formed by patterning a positive photoresist. Accordingly, the upper bank layer 163 may be formed to have a constant taper shape, and may define a first upper light emitting area UEAA and a second upper light emitting area UEAB.

Subsequently, a first upper organic emission layer 152A and a second upper organic emission layer 152B are formed on at least the first upper anode 151A and the second upper anode 151B (S555). Next, a first upper cathode 153A and a second upper cathode 153B are formed on the first upper organic emission layer 152A, the second upper organic emission layer 152B, and the upper bank layer 163 (S560).

6F, the first upper organic light emitting layer 152A and the second upper organic light emitting layer 152B are formed to have the same shape as the upper bank layer 163, the first upper anode 151A and the second upper anode 151B And conformationally formed. Here, the first upper organic emission layer 152A and the second upper organic emission layer 152B are made of an organic material emitting the same color, and may be formed as a single layer. Accordingly, the first upper organic light emitting device 150A and the second upper organic light emitting device 150B emit light of the same color in the first upper light emitting area UEAA and the second upper light emitting area UEAB.

The first upper cathode 153A and the second upper cathode 153B are formed to cover the first upper organic emission layer 152A and the second upper organic emission layer 152B. That is, the first upper cathode 153A and the second upper cathode 153B are formed as common electrodes of the first upper organic light emitting device 150A and the second upper organic light emitting device 150B.

In the method of fabricating an OLED display device according to an embodiment of the present invention, the first upper organic light emitting device 150A and the first lower organic light emitting device 130A are stacked in a first light emitting area EAA, The organic light emitting devices 130A and 150A are formed and the second organic light emitting device 150B and the second organic light emitting device 130B are stacked in the second light emitting area EAB. (130B, 150B) are formed. Specifically, the first barrier rib 165 is disposed between the first emission region EAA and the second emission region EAB so that the first emission region EAA and the second emission region EAB are separated from each other. The first lower organic emission layer 132A, the first lower cathode 133A, the second lower organic emission layer 132B, the second lower cathode 133B, the first buffer layer 140A, and the second buffer layer 140B, The first lower organic light emitting device 130A and the second lower organic light emitting device 130B are separately formed by the first barrier ribs 165. In addition, The first upper anode 151A and the second upper anode 151B are formed of a material having excellent step coverage by sputtering so that the first upper anode 151A and the second upper anode 151B are connected to the first connection anode (TFT) disposed under the first connection anode 155 through the first connection anode 155. The first connection anode 155 and the second connection anode 155 are electrically connected to each other. Accordingly, the first upper organic light emitting element 150A and the second upper organic light emitting element 150B are simultaneously emitted by the same thin film transistor (TFT). Since the first upper organic light emitting layer 152A and the second upper organic light emitting layer 152B are formed as a single layer on the upper bank layer 163 and are made of an organic material emitting the same color, (UEAA) and the second upper emission region (UEAB) can emit light of the same color by the same thin film transistor (TFT).

Accordingly, only one of the two emission regions EAA and EAB is included in one pixel PX1, so that the area of the transmission region TA can be widened. That is, the transmittance of the OLED display 100 is improved by the OLED display manufacturing method according to an embodiment of the present invention.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100, 300: organic light emitting display
110: substrate
120: overcoat layer
130A: a first lower organic light emitting element
131A: a first lower anode
132A: a first lower organic emission layer
133A: Second lower cathode
130B: a second lower organic light emitting element
131B: the second lower anode
132B: a second lower organic emission layer
133B: Second lower cathode
140A: first buffer layer
140B: second buffer layer
150A: a first upper organic light emitting element
151A: a first upper anode
152A: a first upper organic emission layer
153A: first upper cathode
155: first connecting anode
150B: a second upper organic light emitting element
151B: the second upper anode
152B: a second upper organic light emitting layer
153B: the second upper cathode
161: Lower bank layer
163: upper bank layer
165: first partition
355: second connection anode
365: second partition

Claims (23)

An overcoat layer;
A first organic light emitting device and a second organic light emitting device disposed on the overcoat layer; And
And a first barrier rib disposed on the overcoat layer between the first organic light emitting device and the second organic light emitting device,
Wherein the first organic light emitting device comprises:
A first lower organic light emitting diode including a first lower anode, a first lower organic emission layer, and a first lower cathode;
A first upper organic light emitting element disposed on the first lower organic light emitting element and including a first upper anode, a first upper organic light emitting layer, and a first upper cathode; And
And a first buffer layer disposed between the first lower organic light emitting device and the first upper organic light emitting device,
Wherein the second organic light emitting device comprises:
A second lower organic light emitting element including a second lower anode, a second lower organic emission layer, and a second lower cathode;
A second upper organic light emitting device disposed on the second lower organic light emitting device and including a second upper anode, a second upper organic light emitting layer, and a second upper cathode; And
And a second buffer layer disposed between the second lower organic light emitting device and the second upper organic light emitting device,
Wherein the first upper organic emission layer and the second upper organic emission layer are connected in a single layer. The method according to claim 1,
A lower bank layer disposed to cover the side portions of the first lower anode and the second lower anode, respectively; And
And an upper bank layer disposed on a portion of the lower bank layer and disposed to cover the first bank. The method according to claim 1,
And the first upper anode and the second upper anode are electrically connected to each other. The method of claim 3,
Further comprising a first connection anode disposed below the first bank and electrically connecting the first upper anode and the second upper anode. The method according to claim 1,
Wherein the first upper organic emission layer and the second upper organic emission layer are made of a material for emitting the same color. The method according to claim 1,
Wherein the first upper anode and the second upper anode are connected to the same thin film transistor. The method according to claim 1,
Wherein the first upper anode and the second upper anode are made of a transparent conductive layer. 8. The method of claim 7,
Wherein the first lower anode and the second lower anode are made of the same material as the first upper anode and the second upper anode. 9. The method of claim 8,
Wherein the first lower anode and the second lower anode further comprise a reflective layer. The method according to claim 1,
Wherein the first buffer layer and the second buffer layer are made of the same material as at least one of the first lower organic emission layer, the second lower organic emission layer, the first upper organic emission layer, and the second upper organic emission layer. Organic light emitting display. The method according to claim 1,
Further comprising a second barrier rib on one side of the first organic light emitting device or the second organic light emitting device. 12. The method of claim 11,
A first connection anode disposed below the first bank; And
And a second connection anode disposed below the second barrier,
Wherein one of the first connection anode and the second connection anode is electrically connected to the first upper anode and the other is electrically connected to the second upper anode. 13. The method of claim 12,
Wherein the first connection anode and the second connection anode are electrically connected to different thin film transistors. 12. The method of claim 11,
Wherein the first upper organic emission layer and the second upper organic emission layer are made of materials for emitting different colors. 12. The method of claim 11,
A lower bank layer disposed to cover the side portions of the first lower anode and the second lower anode, respectively; And
And an upper bank layer disposed on a part of the lower bank layer and disposed to cover the first bank and the second bank. The method according to claim 1,
A light emitting region including the first organic light emitting device and the second organic light emitting device; And
And a transmissive region that transmits external light and is disposed apart from the light emitting region. Forming a first lower anode, a first connection anode, and a second lower anode, which are spaced apart from each other on an overcoat layer for planarizing a top of the thin film transistor;
Forming a lower bank layer to cover the first lower anode and the second lower anode side;
Forming a first bank on the first connection anode;
Forming a first lower organic emission layer on at least the first lower anode;
Forming a second lower organic emission layer on at least the second lower anode;
Forming a first lower cathode on the first lower organic emission layer and a second lower cathode on the second lower organic emission layer;
Forming a first buffer layer on the first lower cathode and a second buffer layer on the second lower cathode;
Forming a first top anode on the first buffer layer and a second top anode on the second buffer layer;
Forming an upper bank layer on the lower bank layer and the first bank;
Forming a first upper organic emission layer and a second upper organic emission layer on at least the first upper anode and the second upper anode; And
And forming a first upper cathode and a second upper cathode on the first upper organic emission layer, the second upper organic emission layer, and the upper bank layer. 18. The method of claim 17,
Wherein forming the upper bank layer comprises forming the upper bank layer using ink-jet printing or nozzle printing. ≪ RTI ID = 0.0 & . 18. The method of claim 17,
Wherein the upper bank layer is made of at least one of polyimide, polyacryl, and photoresist. 18. The method of claim 17,
Wherein forming the first top anode and the second top anode comprises:
And electrically connecting the first upper anode and the second upper anode to the first connection anode. 18. The method of claim 17,
The step of forming the first lower anode, the first connection anode and the second lower anode may include forming a second connection anode at the same time as the first lower anode, the first connection anode, and the second lower anode Wherein the organic light emitting display device is manufactured by a method comprising the steps of: 22. The method of claim 21,
Wherein forming the first barrier ribs includes forming a second barrier rib on the second connection anode concurrently with the first barrier ribs. 22. The method of claim 21,
Wherein forming the first top anode and the second top anode comprises:
Characterized in that one of the first top anode and the second top anode is electrically connected to the first connection anode and the other is electrically connected to the second connection anode. Device manufacturing method.

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