KR20160061879A - Mask for deposition, manufacturing method for the mask for deposition and manufacturing method for a display apparatus - Google Patents

Abstract

According to an embodiment of the present invention, disclosed is a mask for deposition which comprises: a mask main body having a plurality of pattern holes; a plurality of protrusions protruding from the mask main body; and a plurality of grooves dented in the mask main body. A grain size of the mask main body is 10-1000 nm. A difference between the highest height of the protrusions and the deepest depth of the grooves is smaller than or equal to 0.5 μm.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a mask for vapor deposition, a method for manufacturing a mask for vapor deposition, and a manufacturing method of a display device,

Embodiments of the present invention relate to an evaporation mask, a method of manufacturing an evaporation mask, and a display device manufacturing method.

Electronic devices based on mobility are widely used. In addition to small electronic devices such as mobile phones, tablet PCs are widely used as mobile electronic devices.

The portable electronic device includes a display unit for providing the user with visual information such as an image or an image in order to support various functions. In recent years, as the size of other parts for driving the display unit has been reduced, the weight of the display unit in the electronic apparatus has been gradually increasing, and a structure capable of bending to have a predetermined angle in a flat state has been developed.

In order to form the display portion as described above, various layers can be formed by various methods. At this time, each layer may be formed by a deposition method, a photomask process, or the like.

In the case of vapor deposition of the evaporation material and deposition by spraying, the evaporation source is generally disposed at the bottom, the deposition source is provided with a mask, a substrate is disposed on the mask, Can be deposited on the substrate.

On the other hand, in order to manufacture a display panel requiring large size and high resolution, it is necessary that the pattern hole formed in the mask and passing the deposition material be finely processed. The accuracy of such pattern holes can influence the accuracy of the pattern of the deposition material deposited on the substrate. Particularly, the pattern of the evaporation material as described above is a very important problem with respect to the resolution or performance of the display portion, and it can influence the quality of the product. Therefore, various devices and methods have been applied to increase the precision of the pattern of the deposition material.

For example, the base material of the mask is manufactured by a rolling method, and then the mask can be finally manufactured through an etching process or a laser irradiation process for processing the pattern hole.

The background art described above is technical information acquired by the inventor for the derivation of the embodiments of the present invention or obtained in the derivation process and can not necessarily be known technology disclosed to the general public before the application of the embodiments of the present invention none.

However, when the mask is manufactured using the mask base material manufactured by the rolling method, there is a problem that the pattern holes are not formed in the region where the pattern holes are to be formed, or the shape is defective.

Accordingly, embodiments of the present invention provide an apparatus for manufacturing a mask for mask and a method of manufacturing a mask for mask using the same, for solving the above problems.

An embodiment of the present invention includes a mask body having a plurality of pattern holes, a plurality of protrusions protruding from the mask body, and a plurality of grooves recessed in the mask body, wherein a grain size of the mask body is 10 Nm to 1000 nm, and the difference between the maximum height of the plurality of projections and the maximum depth of the plurality of grooves is 0.5 占 퐉 or less.

In this embodiment, the mask body may comprise an invar alloy containing 30 wt% to 50 wt% nickel.

In the present embodiment, the thickness of the mask body may be 5 占 퐉 to 50 占 퐉.

In this embodiment, the radius of curvature of the edge of the pattern hole may be smaller than the radius of the laser beam for processing the pattern hole.

In this embodiment, the cross-sectional area of the pattern holes in the horizontal direction may be different along the vertical direction of the pattern holes.

In the present embodiment, the inner surface of the pattern hole may include an inclined surface.

According to another embodiment of the present invention, there is provided a method of manufacturing a mask, comprising the steps of: machining a mask base material by an electro-forming process; forming a mask base material between the stage and the light- A step of disposing an optical mirror for transmitting at least a part of a plurality of laser beams between the mask base material and the light diffusing portion; And irradiating a part of the mask base material exposed by the mirror with a plurality of laser beams to process pattern holes in the mask base material.

In this embodiment, the grain size of the mask base material may be 10 nm to 1000 nm

In the present embodiment, the mask base material includes a plurality of protrusions protruding from the surface of the mask base material, and a plurality of grooves recessed from the surface of the mask base material, wherein the difference between the maximum height of the plurality of protrusions and the maximum depth of the plurality of grooves is Or less.

In this embodiment, the mask preform may comprise an invar alloy containing 30 wt% to 50 wt% nickel.

In the present embodiment, the thickness of the mask base material may be from 5 탆 to 50 탆.

In this embodiment, the cross-sectional area of the pattern holes in the horizontal direction may be different along the vertical direction of the pattern holes.

In the present embodiment, the inner surface of the pattern hole may include an inclined surface.

In this embodiment, the step of disposing the mask base material between the stage and the light-splitting portion may include a step of adsorbing the mask base material by an electrostatic chuck disposed between the stage and the mask base material.

In the present embodiment, the step of arranging the optical mirror between the mask base material and the light-splitting portion includes the steps of aligning the first mark formed on the optical mirror and the position of the second mark formed so as to correspond to the shape of the first mark on the mask base material . ≪ / RTI >

In this embodiment, it may further include monitoring the position of the optical mirror and the mask base material, and aligning the optical mirror and the mask base material by moving at least one of the optical mirror and the mask base material.

In this embodiment, a first mark is formed on the optical mirror, a second mark formed on the mask base material so as to correspond to the shape of the first mark, at least one of the optical mirror and the mask base material moves, The position of the second mark can be aligned.

In this embodiment, a plurality of laser beams passed through the scanner can be irradiated in a direction perpendicular to the mask base material.

In this embodiment, the optical mirror includes a transmissive layer that transmits a portion of the plurality of laser beams, and a reflective layer that reflects another portion of the plurality of laser beams, and the reflective layer includes an opening corresponding to the shape of the pattern hole .

In this embodiment, the transmissive layer may include at least one of quartz and glass.

In this embodiment, the reflective layer may comprise an opaque metal.

In this embodiment, the radius of curvature of the edge of the opening may be less than the radius of the plurality of laser beams.

According to another embodiment of the present invention, there is provided a method of manufacturing a display device including a pixel electrode and a counter electrode opposite to each other on a substrate, and an organic film provided between the pixel electrode and the counter electrode, Wherein the deposition mask comprises a mask body having a plurality of pattern holes, a plurality of protrusions protruding from the mask body, and a plurality of grooves recessed in the mask body, And the difference between the maximum height of the plurality of projections and the maximum depth of the plurality of grooves is 0.5 占 퐉 or less.

In this embodiment, the mask body may comprise an invar alloy containing 30 wt% to 50 wt% nickel.

In the present embodiment, the thickness of the mask body may be 5 占 퐉 to 50 占 퐉.

In this embodiment, the deposition mask may be manufactured by irradiating one or more laser beams onto a mask base material produced by an electro-forming method to process the pattern holes.

In this embodiment, the radius of curvature of the edge of the pattern hole may be smaller than the radius of the laser beam for processing the pattern hole.

In this embodiment, the cross-sectional area of the pattern hole in the horizontal direction can be gradually widened along the vertical direction of the pattern hole.

In the present embodiment, the inner surface of the pattern hole may include an inclined surface.

Other aspects, features, and advantages will become apparent from the following drawings, claims, and detailed description of the invention.

According to an embodiment of the present invention as described above, a vapor deposition mask, a vapor deposition mask manufacturing method, and a display device manufacturing method that can precisely process a pattern hole of a vapor deposition mask through which a vapor deposition material passes can be realized.

Of course, the scope of the present invention is not limited by these effects.

FIG. 1 is a perspective view schematically showing a mask base material in a state before manufacturing a deposition mask according to an embodiment of the present invention. FIG.
FIG. 2 is an enlarged sectional view taken along the line II 'in FIG.
FIG. 3 is a conceptual view schematically showing an apparatus for manufacturing a mask for vapor deposition according to another embodiment of the present invention. FIG.
FIG. 4 is an enlarged cross-sectional view taken along line II-II 'of FIG. 3; FIG.
5 is an enlarged perspective view showing the area A of FIG. 3 in an enlarged manner.
Fig. 6 is an enlarged plan view showing the area B in Fig. 5 enlargedly.
Fig. 7 is an enlarged perspective view showing another modification of the optical mirror of Fig. 5;
8 is a view showing a display device manufactured using the deposition mask shown in FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention and methods of achieving them will be apparent with reference to the embodiments described in detail below with reference to the drawings. However, the present invention is not limited to the embodiments described below, but may be implemented in various forms.

In the following embodiments, the terms first, second, and the like are used for the purpose of distinguishing one element from another element, not the limitative meaning. Also, the singular expressions include plural expressions unless the context clearly dictates otherwise. Also, the terms include, including, etc. mean that there is a feature, or element, recited in the specification and does not preclude the possibility that one or more other features or components may be added.

Also, in the drawings, for convenience of explanation, the components may be exaggerated or reduced in size. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings. Also, if an embodiment is otherwise feasible, the particular process sequence may be performed differently than the sequence described. For example, two processes that are described in succession may be performed substantially concurrently, and may be performed in the reverse order of the order described.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like or corresponding components throughout the drawings, and a duplicate description thereof will be omitted .

FIG. 1 is a perspective view schematically showing a mask base material before a deposition mask according to an embodiment of the present invention is manufactured, and FIG. 2 is an enlarged sectional view taken along line I-I 'of FIG.

1 and 2, the mask base material 50 may include a plurality of protrusions 53a projecting from the mask body 51 and a plurality of grooves 53b recessed from the mask body 51 . It is preferable that the difference between the maximum height h _a of the plurality of projections 53a and the maximum depth h _b of the plurality of grooves 53b is 0.5 탆 or less.

A plurality of protrusions 53a and grooves 53b may be formed on the surface of the mask body 51, respectively. Here, the protrusions 53a and the grooves 53b shown in FIG. 1 are enlarged views of a part of the mask body 51. Although not specifically shown in the drawing, more numbers can be formed.

1, the protrusions 53a and the grooves 53b are shown as hemispherical protrusions or recesses protruding from the surface of the mask body 51. However, But the shape is not limited thereto. That is, the projections 53a and the grooves 53b formed on the surface of the mask body 51 may be formed to extend in the longitudinal direction (X-axis direction) or the width direction (Y-axis direction) of the mask base material 50 have. Hereinafter, for convenience of description, description will be made on the basis that hemispherical protrusions 53a and grooves 53b are formed on the surface of the mask body 51. FIG.

The mask base material 50 shown in Figs. 1 and 2 can be generally manufactured by rolling. Specifically, the rolling process is a process of processing a metal sheet by passing a metal material of high or normal temperature between two rotating rolls using plasticity of the metal. Such a rolling method is fast and has a low production cost. However, when the mask base material 50 shown in FIG. 1 is manufactured by the rolling method, a structure similar to the projections 53a and the grooves 53b having a height difference of 0.5 mu m is obtained I can not.

Instead, the mask base material 50 according to an embodiment of the present invention shown in FIG. 1 may be manufactured by electro-forming. More specifically, the electroforming process is a process of processing a metal electrodeposited layer by utilizing a phenomenon that metal ions are discharged and electrodeposited in a negative electrode when a negative electrode and a positive electrode are opposed to each other in an electrolytic solution. When the mask base material 50 is produced by such electroforming, the maximum height difference between the projections 53a and the grooves 53b can be formed to 0.5 mu m or less, and the surface of the mask body 51 is relatively more As shown in FIG.

As will be described later, the mask base material 50 is irradiated with the laser beam LB to manufacture the evaporation mask 150. In the case of irradiating the laser beam toward the mask base material produced by the rolling process, the laser beam is irradiated onto the mask base material by the step structure due to the height difference between the protrusions and grooves existing on the mask base material, -focusing occurs. When the focal point of the laser beam irradiated to the mask base material is deviated in this manner, there is a high possibility that the shape of the pattern hole processed by the laser beam is deformed and defective.

However, when the mask base material 50 is processed by electroforming according to the embodiments of the present invention, since the surface of the mask main body 51 is uniformly formed, the defect rate of the pattern holes formed in the mask base material 50 is remarkably improved can do.

On the other hand, according to the current trend of demanding a large-sized and high-resolution display, it is required that the thickness of an evaporation mask used for depositing various evaporation materials on a panel of a display device is thinned. In general, as a deposition mask having a thickness greater than 50 탆, it is impossible to manufacture a display device with a high resolution resolution of UHD (Ultra-HD) or higher. However, according to the embodiments of the present invention, the mask base material 50, which is processed by electroforming, can be produced with a thickness t of 5 to 50 mu m, and has a thickness t of 5 to 50 mu m The mask mask 150 can be manufactured by irradiating the mask base material 50 with a laser beam to form the pattern holes 152. [

On the other hand, the mask base material 50 manufactured by electroforming may include an invar alloy containing 30 wt% to 50 wt% of nickel. Specifically, the mask base material 50 made of Invar can be formed to have a grain size of 10 nm to 1000 nm.

In detail, the crystal grain size is a measure indicating the average size of crystal grains, which is an aggregate of crystals having different crystal orientations. This crystal grain size can be determined by measuring a two-dimensional number of crystal grains included in a positive area (635 mm 2) of 25 mm in length on one side by a microscope photograph in which crystal grains are enlarged.

In general, Invar produced through a rolling process has a grain size of several tens of micrometers (占 퐉). When a mask base material having a crystal grain size of several tens of micrometers is used to manufacture an evaporation mask, the pattern hole can not be finely processed in the mask base material, resulting in an untreated area. This is because, during the process of abrading a part of the mask base material by the laser beam, a part of the mask base material remains in the form of dust and blocks the optical path of the laser beam.

On the other hand, when the evaporation mask 150 is manufactured using the mask base material 50 having a crystal grain size of 10 nm to 1000 nm processed by electroforming, a pattern hole 152 is formed in the mask base material 50 It can be finely processed. Specifically, considering the factors such as the manufacturing cost, the convenience of the process, and the time required, it is preferable that the mask base material 50 be processed to have a crystal grain size of 10 nm or more. In order to finely pattern the pattern hole 152 so as to prevent the occurrence of an untreated area, it is preferable that the mask base material 50 be processed to have a grain size of 1000 nm or less.

FIG. 3 is a conceptual view schematically showing an apparatus for manufacturing a mask for vapor deposition according to another embodiment of the present invention. FIG.

3, the deposition mask manufacturing apparatus 10 includes a laser oscillating unit 100, a light splitting unit 200, a scanner 300, and an optical mirror 400.

The laser oscillating unit 100 can oscillate the laser beam L that is the energy source for processing the pattern hole 152 in the mask base material 50 to be described later toward the light splitting unit 200. [

The spectroscopic unit 200 can disperse the laser light L emitted from the laser oscillation unit 100 into a plurality of laser beams LB. Each of the plurality of spectroscopic laser beams LB is used to process a pattern hole (refer to FIG. 4) 152, which will be described later. In detail, each laser beam LB is partially reflected by the optical mirror 400 to be described later, and the other part is irradiated to the mask base material 50 to process the pattern hole 152. [ The plurality of laser beams LB emitted from the light splitting unit 200 may be irradiated in a direction perpendicular to the mask base material 50. [

The scanner 300 can control the irradiation direction of the plurality of laser beams LB passing through the light splitting unit 200. [ More specifically, the mask base material 50 is fixed to the stage 25 during the process of irradiating the mask base material 50 with the laser beam LB to process the pattern holes 152. The scanner 300 can be driven to move within a range corresponding to the area of the pattern hole 152 to be processed. By driving the scanner 300, the laser beam LB is precisely irradiated onto the mask base material 50, so that the pattern hole 152 can be finely processed.

Next, the optical mirror 400 is disposed between the scanner 300 and the mask base material 50, and can transmit a part of the plurality of laser beams LB that have passed through the scanner 300. The optical mirror 400 may include a transmissive layer 410 that transmits a portion of the plurality of laser beams LB and a reflective layer 420 that reflects other portions of the plurality of laser beams LB .

In addition, the deposition mask manufacturing apparatus 10 may further include an electrostatic chuck 30 for adsorbing the mask base material 50. [ The electrostatic chuck 30 may be embedded in the stage 25 supporting the mask base material 50 as shown in Fig. 3, but is not limited thereto. For example, the electrostatic chuck 30 may be disposed on the stage 25 as a separate member between the stage 25 and the mask base material 50. The electrostatic chuck 30 sucks the mask base material 50 so as to prevent the mask base material 50 from moving on the stage 25 during the process of processing the pattern hole 152 in the mask base material 50. [ To the stage 250, as shown in FIG.

On the other hand, in order to precisely irradiate the laser beam LB to the position of the pattern hole 152 to be processed in the mask base material 50, it is necessary to accurately align the optical mirror 400 and the mask base material 50.

The mask making apparatus 10 includes a camera unit (not shown) for monitoring the position of the optical mirror 400 and the mask base material 50 and a camera unit (not shown) for monitoring the position of the optical mirror 400 and the mask base material 50. [ (Not shown) for aligning the positions of the optical mirror 400 and the mask base material 50 by moving at least one of the optical mirror 400 and the optical mirror 400.

Although not shown, the camera section is disposed in a chamber (not shown) in which the vapor deposition mask manufacturing apparatus 10 is accommodated, so that the position of the optical mirror 40 and the mask base material 50 can be monitored Installation is possible. The driving unit may be connected to the mask base material 50 so as to bring the mask base material 50 into the chamber and may be connected to the optical mirror 400 to move the optical mirror 400 relative to the mask base material 50 It is possible.

Hereinafter, the transmission layer 410 and the reflection layer 420 of the optical mirror 400 will be described in detail with reference to FIGS. 4 to 6. FIG. The vapor deposition mask 150 shown in FIG. 4 shows a state after the patterning hole 152 is formed in the mask base material 50 by processing the mask base material 50 shown in FIG. 3 with a laser beam LB.

FIG. 4 is an enlarged cross-sectional view taken along the line II-II 'of FIG. 3, and FIG. 5 is an enlarged perspective view of the region A of FIG. Fig.

The optical mirror 400 can generally be manufactured by a photolithography process. For example, in the photolithography process, a photoresist is thinly coated on a surface of a structure stacked with a plurality of layers, a light exposure is performed while a photomask having a pattern to be formed is placed on the photoresist, And then selectively etching the exposed region and the unexposed region to obtain a desired pattern. The opening 425 may be formed by partially etching the reflective layer 420 disposed on the transmissive layer 410 through such a photolithography process.

On the other hand, since the transmissive layer 410 is continuously exposed to the laser beam LB during the process of forming the pattern hole 152 in the mask base material 50, it is preferable that the transmissive layer 410 is formed of a material having excellent heat resistance and light transmittance. For example, the transmissive layer 410 may include at least one of quartz and glass which is excellent in heat resistance and can transmit the simultaneous light.

Next, the reflective layer 420 may be formed of an opaque metal that is positioned between the transmissive layer 410 and the scanner 300 and can reflect a part of the laser beam LB. The opening 425 formed in the reflective layer 420 may be formed through the reflective layer 420 to allow the laser beam LB to pass therethrough.

A plurality of openings 425 formed in the reflective layer 420 may be formed on the mask base material 50 to correspond to the shape of the pattern holes 152 formed in the matrix base material 50. Only the six openings 425 are shown in FIG. 5 because only a predetermined region (reference symbol A in FIG. 3) of the optical mirror 400 is shown in an enlarged scale. Therefore, the opening 425 formed in the optical mirror 400, The number of the laser beams LB irradiated from the light splitting unit 200 may correspond to the number of the laser beams LB.

The transmissive layer 410 is disposed to support the reflective layer 420 on which the opening 425 is formed and the remaining region except for the area exposed by the opening 425 is disposed to be covered by the reflective layer 420. The transmissive layer 410 can be exposed to the laser beam LB only by a portion of the transmissive layer 410 corresponding to the shape of the pattern hole 152 to be formed in the mask base material 50 by the opening 425 of the reflective layer 420 have.

The laser beam LB irradiating the opening 425 does not reach the reflective layer 420 and the reflective layer 420 and the laser beam LB irradiated to the opening 425 are not reflected. Transmissive layer 410 through the mask base material 50 in order.

The laser beam LB irradiated to the interface between the surface 421 of the reflection layer 420 and the opening 425, that is, a part of one laser beam LB is irradiated to the surface 421 of the reflection layer 420 Only the other part of the laser beam LB irradiated to the opening 425 is transmitted through the transmissive layer 410 through the opening 425 to form the mask base material 50). ≪ / RTI >

The horizontal cross-sectional area of the pattern hole 152 processed by the laser beam LB may be formed to be different along the vertical direction of the pattern hole 152. Here, the horizontal direction means the X axis direction, which is the longitudinal direction of the evaporation mask 150, and the vertical direction, the + Z axis direction, which is the thickness direction of the evaporation mask 150. That is, the inner surface of the pattern hole 152 may include an inclined surface.

5 and 6, the openings 425 are formed in a rectangular shape, and the openings 425 may be spaced apart from each other by a reference G. Referring to FIG. The shape of the opening 425 is not limited to this, and it is needless to say that the opening 425 can be formed into various shapes such as a polygonal shape, a circular shape, and an elliptical shape in addition to the rectangular shape as shown in FIGS. However, for convenience of explanation, the case where the opening 425 is rectangular will be described in detail below.

In detail, the gap G between the openings 425 may vary depending on the length of the radius of curvature R of each opening 425. That is, as the radius of curvature R of each opening 425 is smaller, the corner of the opening 425 is formed to be close to a right angle. Thus, if the corner of the opening 425 is formed to be close to a right angle, 425 are also relatively close (see reference character G ').

Conversely, when the radius of curvature R of each of the openings 425 is increased, a gap of d can be further formed as compared with the case where the opening 425 is formed in a quadrangle (see G ') . In this case, the gap between the openings 425 is formed to be 2d more apart than when the openings 425 are formed in a square shape.

If the laser beam LB is irradiated directly onto the mask base material 50 without the optical mirror 400, the respective edges of the pattern holes 152 formed in the mask base material 50 are irradiated with the laser beam LB Shape. This is because the edge of the pattern hole 152 has to be formed so as to correspond to the shape of the laser beam LB due to the characteristic of the laser beam LB formed into a circular shape having a predetermined diameter.

In order to solve such a problem, the vapor deposition mask manufacturing apparatus 10 includes an optical mirror 400 which selectively transmits the laser beam LB. As described above, the optical mirror 400 can selectively transmit or reflect the laser beam LB irradiated in the direction of the mask base material 50.

Therefore, if the radius of curvature R of the edge of the opening 425 formed in the reflection layer 420 of the optical mirror 400 is made smaller than the radius R _LB of the laser beam LB, A portion of the laser beam LB irradiated on the surface 421 of the reflective layer 420 among the laser beams LB irradiated on the opening 425 is reflected The pattern hole 152 can be processed by transmitting the laser beam LB.

This pattern so as to correspond to a radius of curvature (R) of the opening 425 to the edge shape of the laser beam (LB) when the formed smaller than the radius (R _LB), the laser beam (LB), the opening (425), regardless of the shape of the The edge of the hole 152 can be machined. Therefore, if the curvature radius R of the corner of the opening 425 is formed to be smaller than the radius R _LB of the laser beam LB, preferably, if the corner of the opening 425 is formed to be close to a right angle, The shape of the edge of the pattern 152 can also be formed to be close to a right angle, and as a result, the interval between the pattern holes 152 can be minimized.

Here, the reason why the edge of the pattern hole 152 is formed so as to be 'substantially close to the right angle' is because it is practically impossible for the corner of the pattern hole 152 to be formed at a right angle. In other words, the shape of the opening 425 and the pattern hole 152 can be seen by the naked eye as a quadrangle, but the opening 425 and the pattern hole 152 are formed very finely, When the corner of the hole 152 is observed, the corner of the opening 425 and the pattern hole 152 may be formed in a shape having a predetermined radius of curvature R rather than a right angle.

Hereinafter, an effect obtained by forming the shape of the pattern hole 152 close to a quadrangle will be described.

First, the pattern hole 152 serves to pass the deposition material in a process of depositing the deposition material on a display panel (not shown). Therefore, the shape of the pattern hole 152 is formed to correspond to the shape of the light emitting portion (not shown) deposited on the display panel. Therefore, the closer the shape of the pattern hole 152 is to a quadrangle, the more the deposition material can be deposited on the display panel in a shape close to a quadrangle.

In general, in order to realize a high resolution display of UHD (ultra high definition) or higher, it is necessary to maximize a region occupied by a light emitting portion that emits visible light within a predetermined region of a display panel. The light emitting portion is formed of a deposition material that passes through the pattern hole 152 and is deposited on the display panel. The gap G between the openings 425 can be minimized by forming each of the openings 425 for determining the shape of the pattern hole 152 close to a quadrangle as described above, It is possible to maximize the area occupied by the light emitting portion within a predetermined region of the light emitting portion.

Therefore, when the laser beam LB is irradiated directly onto the mask base material 50 without the optical mirror 400, the radius of curvature R of the pattern hole 152 to be processed is set to the radius R _LB of the laser beam _LB When the optical mirror 400 is provided in the mask making apparatus 10 and the optical mirror 400 is disposed on the mask base material 50 when the pattern hole 152 is machined, The radius of curvature R of the laser beam 152 can be smaller than the radius R _LB of the laser beam LB. Further, organic substances may be deposited on the display panel in a shape close to a quadrangle, thereby maximizing the area of the light emitting portion within a predetermined region of the display panel.

Fig. 7 is an enlarged perspective view showing another modification of the optical mirror of Fig. 5;

7, the optical mirror 401 may be provided with a first mark 422 having a cross shape for facilitating the alignment of the optical mirror 401 with the mask base material 50. A second mark (not shown) having a shape corresponding to the shape of the first mark 422 may be formed on the mask base material 50. However, the shapes of the first mark 422 and the second mark are not limited thereto For example, a circular shape, an elliptical shape, or a polygonal shape.

The first mark 422 may be formed on at least one of the transmissive layer 410 and the reflective layer 420 of the optical mirror 401 but is preferably formed in the reflective layer 420. This is because the transmissive layer 410 is made of a material such as quartz or glass that can transmit the laser, and can transmit the laser beam LB without forming the first mark 422. The second mark may be formed in the mask base material 50 so as to correspond to the shape and position of the first mark 422. [

The camera unit (not shown) and the driving unit (not shown) monitor the positions of the first mark 422 formed on the optical mirror 401 and the second mark formed on the mask base material 50, The laser beam LB is irradiated onto the mask base material 50 by aligning the positions of the first mark 422 and the second mark by moving any one of the first mark 421 and the second mask 421 and the mask base material 50, Preparation for processing can be performed.

Next, a description will be made of a method for manufacturing an evaporation mask in which an evaporation mask is manufactured by processing a pattern hole 152 in a mask base material 50 with an evaporation mask production apparatus 10.

First, the mask base material 50 is disposed between the stage 25 and the spectroscopic sections 200 for spectrally dividing the laser light L oscillated by the laser oscillation section 100 into a plurality of laser beams LB. At this time, the stage 25 is provided so as to be movable in the longitudinal direction of the mask base material 50, and one mask base material 50 is introduced into the chamber (not shown) to process the pattern holes 152, The driving can be repeatedly performed.

The deposition mask manufacturing apparatus 10 may further include an electrostatic chuck 30. The electrostatic chuck 30 sucks the mask base material 50 so that the mask base material 50 is adhered to the stage 25 .

Next, the optical mirror 400 is disposed between the mask base material 50 and the light splitting section 200. Here, the detailed description of the optical mirror 400 has been described above in detail, and a detailed description thereof will be omitted or outlined.

In detail, the optical mirror 400 is disposed on the mask base material 50, and a first mark 422 formed on the optical mirror 400 and a second mark (not shown) formed on the mask base material 50 are aligned . When the first mark 422 is aligned with the second mark, the camera unit monitors the positions of the optical mirror 400 and the mask base material 50, and the driving unit (not shown) 50 may be moved to align the positions of the first mark 422 and the second mark.

Here, aligning the optical mirror 400 on the mask base material 50 means that the shape of the opening 425 formed in the reflection layer 420 of the optical mirror 400 is different from that of the pattern hole To correspond to the shape of the protrusion 152.

After the mask base material 50 and the optical mirror 400 are aligned and arranged on the stage 25, the laser oscillating portion 100 is driven. The laser light L emitted from the laser oscillating unit 100 is split into a plurality of laser beams LB at the light splitting unit 200 and delivered to the scanner 300. The scanner 300 irradiates a part of the mask base material 50 exposed by the optical mirror 400 to a pattern hole 152 in the mask base material 50 by irradiating a plurality of laser beams LB, ).

At this time, the scanner 300 can adjust the irradiation direction of the plurality of laser beams LB passing through the light splitting unit 200. More specifically, the laser beam LB irradiated toward the mask base material 50 from the side of the light splitting part 200 to process the pattern hole 152 is scanned by the scanner 300 in a direction corresponding to the size of the pattern hole 152 The pattern hole 152 can be formed by moving freely in the longitudinal direction and the width direction of the mask base material 50 in the region.

In detail, the cross-sectional area in the horizontal direction of the pattern hole 152 processed by this laser beam LB can be formed to be different along the vertical direction of the pattern hole 152. [ That is, the inner surface of the pattern hole 152 may include an inclined surface. The irradiation time of the laser beam LB is increased from the edge area of the opening 425 toward the central area of the opening 425 or the laser beam LB is irradiated to the central area of the opening 425, It is possible to irradiate the central region of the opening 425 with a stronger energy.

The laser beam LB irradiated to the opening 425 passes through the opening 425 and the transmission layer 410 and is guided to the mask base material 50 by the laser beam LB irradiated to the edge area of the opening 425 Can be investigated. On the other hand, the laser beam LB irradiated on the reflective layer 420 adjacent to the opening 425 is reflected by the reflective layer 420 and is not used to process the mask base material 50.

Therefore, regardless of the shape of the laser beam LB, the shape of the pattern hole 152 can be formed to correspond to the shape of the opening 425. [ This means that the shape of the edge of the pattern hole 152 can also be formed to correspond to the shape of the edge of the opening 425. [ That is, as described above, the pattern hole 152 can be formed by using the optical mirror 400 to form the pattern hole 152 in a shape close to a quadrangle.

The effect obtained by forming the shape of the pattern hole 152 close to a quadrangle is described in detail in detail above, so a detailed description thereof will be omitted here.

FIG. 8 is a view showing a display device manufactured using the deposition mask shown in FIGS. 1 and 2. FIG.

Referring to FIG. 8, the display device 500 may include a substrate 510 and a display unit (not shown). In addition, the display device 500 may include a thin film sealing layer E or an encapsulating substrate (not shown) formed on the display portion. At this time, the encapsulation substrate is the same as or similar to that used in a general display device, and a detailed description thereof will be omitted. Hereinafter, the display device 500 will be described in detail with reference to the case where the thin film encapsulation layer E is included for convenience of explanation.

The display portion may be formed on the substrate 510. [ At this time, the display unit includes a thin film transistor (TFT), a passivation film 570 is formed to cover the passivation film 570, and an organic light emitting device 580 may be formed on the passivation film 570.

At this time, the substrate 510 may be made of a glass material, but not limited thereto, and a plastic material or a metal material such as SUS or Ti may be used. The substrate 510 may be formed of polyimide (PI). Hereinafter, the substrate 510 is formed of a glass material for convenience of explanation.

A buffer layer 520 made of an organic compound and / or an inorganic compound is further formed on the upper surface of the substrate 510 and may be formed of SiOx (x? 1) or SiNx (x? 1).

After the active layer 530 is formed on the buffer layer 520 in a predetermined pattern, the active layer 530 is buried by the gate insulating layer 540. The active layer 530 has a source region 531 and a drain region 533 and further includes a channel region 525 therebetween.

The active layer 530 may be formed to contain various materials. For example, the active layer 530 may contain an inorganic semiconductor material such as amorphous silicon or crystalline silicon. As another example, the active layer 530 may contain an oxide semiconductor. As another example, the active layer 530 may contain an organic semiconductor material. Hereinafter, the active layer 530 is formed of amorphous silicon for convenience of explanation.

The active layer 530 may be formed by forming an amorphous silicon film on the buffer layer 520, forming the amorphous silicon film into a polycrystalline silicon film by patterning the amorphous silicon film, and patterning the polycrystalline silicon film. The active layer 530 is doped with impurities in its source region 531 and drain region 533 depending on the type of the TFT, such as a driving TFT (not shown) and a switching TFT (not shown).

On the upper surface of the gate insulating layer 540, a gate electrode 550 corresponding to the active layer 530 and an interlayer insulating layer 560 filling the gate electrode 550 are formed.

After the contact hole H1 is formed in the interlayer insulating layer 560 and the gate insulating layer 540, the source electrode 571 and the drain electrode 572 are formed on the interlayer insulating layer 560 in the source region 531 and the drain region 533, respectively.

A passivation film 570 is formed on the upper portion of the thin film transistor thus formed and a pixel electrode 581 of the organic light emitting diode OLED is formed on the passivation film 570. This pixel electrode 581 is contacted to the drain electrode 572 of the TFT by the via hole H2 formed in the passivation film 570. [ The passivation film 570 may be formed of a single layer or two or more layers of an inorganic material and / or an organic material, and may be formed of a planarizing film such that the top surface is flat regardless of the bending of the bottom film, And may be formed so as to have a curved shape. The passivation film 570 is preferably formed of a transparent insulator so as to achieve a resonance effect.

After the pixel electrode 581 is formed on the passivation film 570, the pixel defining film 590 is formed of an organic material and / or an inorganic material so as to cover the pixel electrode 581 and the passivation film 570, The electrode 581 is opened to be exposed.

An intermediate layer 582 and a counter electrode 583 are formed on at least the pixel electrode 581.

The pixel electrode 581 functions as an anode electrode and the counter electrode 583 functions as a cathode electrode. Of course, the polarities of the pixel electrode 581 and the counter electrode 583 may be reversed.

The pixel electrode 581 and the counter electrode 583 are insulated from each other by the intermediate layer 582 and voltages of different polarities are applied to the intermediate layer 582 to cause the organic light emitting layer to emit light. Here, the intermediate layer 582 can be deposited using the deposition mask 150 according to an embodiment of the present invention shown in FIG.

Specifically, the intermediate layer 582 may have an organic light emitting layer. As another alternative, the intermediate layer 582 may include an organic emission layer, and may further include a hole injection layer (HIL), a hole transport layer (Hole transport layer), an electron transport layer And an electron injection layer may be further included.

Meanwhile, the thin film encapsulation layer E may include a plurality of inorganic layers, or may include an inorganic layer and an organic layer.

The organic layer of the thin film encapsulating layer (E) may be a single film or a laminated film formed of a polymer and preferably formed of any one of polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene and polyacrylate. More preferably, the organic layer may be formed of polyacrylate, and specifically, a monomer composition containing a diacrylate monomer and a triacrylate monomer may be polymerized. The monomer composition may further include a monoacrylate monomer. The monomer composition may further include a known photoinitiator such as TPO, but is not limited thereto.

The inorganic layer of the thin-film encapsulating layer (E) may be a single film or a laminated film containing a metal oxide or a metal nitride. Specifically, the inorganic layer may include any one of SiNx, Al2O3, SiO2, and TiO2.

The uppermost layer exposed to the outside of the thin film encapsulation layer (E) may be formed of an inorganic layer to prevent moisture permeation to the organic light emitting element.

The thin film encapsulation layer (E) may include at least one sandwich structure in which at least one organic layer is interposed between at least two inorganic layers. As another example, the thin film encapsulation layer (E) may include at least one sandwich structure in which at least one inorganic layer is interposed between at least two organic layers. As another example, the thin-film encapsulation layer (E) may include a sandwich structure in which at least one organic layer is interposed between at least two inorganic layers, and a sandwich structure in which at least one inorganic layer is interposed between at least two organic layers .

The thin film encapsulation layer E may include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, and a third inorganic layer sequentially from the top of the organic light emitting diode OLED.

As another example, the thin film encapsulation layer (E) may include a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, a third inorganic layer, a third organic layer , And a fourth inorganic layer.

A halogenated metal layer including LiF may be further included between the organic light emitting element OLED and the first inorganic layer. The metal halide layer can prevent the organic light emitting diode OLED from being damaged when the first inorganic layer is formed by a sputtering method.

The area of the first organic layer may be smaller than the area of the second inorganic layer and the area of the second inorganic layer may be smaller than the area of the third inorganic layer.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the exemplary embodiments, and that various changes and modifications may be made therein without departing from the scope of the present invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: mask-making mask manufacturing apparatus 200:
25: Stage 300: Scanner
30: electrostatic chuck 400, 401: optical mirror
50: mask base material 410: transparent layer
51, 151: mask body 420: reflective layer
53: projection 421: surface
100: laser oscillation section 422: first mark
150: vapor deposition mask 425: opening
152: pattern hole

Claims (29)

A mask body having a plurality of pattern holes;
A plurality of projections projecting from the mask body; And
And a plurality of grooves recessed in the mask body,
The crystal grain size of the mask body is 10 nm to 1000 nm,
Wherein a difference between a maximum height of the plurality of projections and a maximum depth of the plurality of grooves is 0.5 占 퐉 or less. The method according to claim 1,
Wherein the mask body comprises an invar alloy containing 30 wt% to 50 wt% nickel. The method according to claim 1,
Wherein the thickness of the mask body is 5 占 퐉 to 50 占 퐉. The method according to claim 1,
Wherein a radius of curvature of an edge of the pattern hole is smaller than a radius of a laser beam for processing the pattern hole. The method according to claim 1,
Wherein the cross-sectional area of the pattern hole in the horizontal direction is different along the vertical direction of the pattern hole. 6. The method of claim 5,
Wherein the inner surface of the pattern hole includes an inclined surface. Processing the mask base material by an electro-forming process;
Disposing the mask base material between a stage and a spectroscopic section for spectrally splitting a laser beam emitted from the laser oscillation section into a plurality of laser beams;
Disposing an optical mirror between the mask base material and the minute portion to transmit at least a part of the plurality of laser beams; And
A pattern hole is formed in the mask base material by irradiating a part of the mask base material exposed by the optical mirror with the plurality of laser beams through a scanner which adjusts the irradiation direction of the plurality of laser beams passed through the spectroscopic unit, The method comprising the steps of: 8. The method of claim 7,
Wherein a grain size of the mask base material is 10 nm to 1000 nm. 8. The method of claim 7,
The mask base material,
A plurality of protrusions protruding from the surface of the mask base material,
And a plurality of grooves recessed from the surface of the mask base material,
Wherein a difference between a maximum height of the plurality of projections and a maximum depth of the plurality of grooves is 0.5 占 퐉 or less. 8. The method of claim 7,
Wherein the mask preform comprises an invar alloy containing 30 wt% to 50 wt% nickel. 8. The method of claim 7,
Wherein the thickness of the mask base material is 5 占 퐉 to 50 占 퐉. 8. The method of claim 7,
Wherein the cross-sectional area of the pattern hole in the horizontal direction is different along the vertical direction of the pattern hole. 13. The method of claim 12,
And the inner surface of the pattern hole includes an inclined surface. 8. The method of claim 7,
Wherein the step of disposing the mask base material between the stage and the light-
And an electrostatic chuck disposed between the stage and the mask base material to adsorb the mask base material. 8. The method of claim 7,
Wherein the step of disposing the optical mirror between the mask base material and the light-
And aligning a position of a first mark formed on the optical mirror and a position of a second mark formed on the mask base material so as to correspond to the shape of the first mark. 8. The method of claim 7,
Monitoring the position of the optical mirror and the mask base material,
Further comprising moving at least one of the optical mirror and the mask preform to align the mask preform with the optical mirror. 17. The method of claim 16,
A first mark is formed on the optical mirror,
A second mark corresponding to the shape of the first mark is formed on the mask base material,
Wherein at least one of the optical mirror and the mask base material moves to align the positions of the first mark and the second mark. 8. The method of claim 7,
And the plurality of laser beams passed through the scanner are irradiated in a direction perpendicular to the mask base material. 8. The method of claim 7,
The optical mirror includes:
A transmissive layer for transmitting a part of the plurality of laser beams,
And a reflective layer for reflecting another portion of the plurality of laser beams,
Wherein the reflective layer includes an opening corresponding to the shape of the pattern hole. 20. The method of claim 19,
Wherein the transmissive layer comprises at least one of quartz and glass. 20. The method of claim 19,
Wherein the reflective layer comprises an opaque metal. 20. The method of claim 19,
Wherein the radius of curvature of the edge of the opening is less than the radius of the plurality of laser beams. A method of manufacturing a display device including a pixel electrode and a counter electrode opposite to each other on a substrate, and an organic film provided between the pixel electrode and the counter electrode,
The organic film is deposited using an evaporation mask,
Wherein the vapor deposition mask comprises:
A mask body having a plurality of pattern holes,
A plurality of protrusions protruding from the mask body,
And a plurality of grooves recessed in the mask body,
The crystal grain size of the mask body is 10 nm to 1000 nm,
Wherein a difference between a maximum height of the plurality of projections and a maximum depth of the plurality of grooves is 0.5 占 퐉 or less. 24. The method of claim 23,
Wherein the mask body comprises an invar alloy containing 30 wt% to 50 wt% nickel. 24. The method of claim 23,
Wherein the mask body has a thickness of 5 占 퐉 to 50 占 퐉. 24. The method of claim 23,
Wherein the vapor deposition mask comprises:
Wherein the pattern hole is manufactured by irradiating at least one laser beam onto a mask base material manufactured by an electro-forming method to form the pattern hole. 24. The method of claim 23,
Wherein a radius of curvature of an edge of the pattern hole is smaller than a radius of a laser beam for processing the pattern hole. 24. The method of claim 23,
Wherein a cross-sectional area of the pattern hole in a horizontal direction is different along a vertical direction of the pattern hole. 24. The method of claim 23,
And the inner surface of the pattern hole includes an inclined surface.

Images