KR20160058356A - Organic electro luminescent device and method of fabricating the same - Google Patents

Abstract

The present invention relates to an organic electroluminescence element capable of increasing light efficiency. The organic electroluminescence element comprises: a substrate having multiple light emitting areas; a thin film transistor provided on the substrate; a metal pattern provided by the light emitting areas on the same layer on which one electrode of the thin film transistor is provided; a protective layer positioned on the electrode of the thin film transistor and the metal pattern; a first electrode provided on the protective layer by the light emitting areas and having a portion at which the metal pattern is formed with a convex uneven structure; a bank overlapped with an edge of the first electrode and surrounding each of the multiple light emitting areas; an organic light emitting layer provided on the first electrode in each of the multiple light emitting areas surrounded by the bank; and a second electrode provided on the organic light emitting layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device and a method of fabricating the same,

The present invention relates to an organic electroluminescent device, and more particularly, to an organic electroluminescent device capable of improving light efficiency and a method of manufacturing the same.

An organic electroluminescent device, which is one of flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, since it is a self-luminous type that emits light by itself, it has a large contrast ratio, can realize an ultra-thin display, can realize a moving image with a response time of several microseconds (μs), has no viewing angle limit, And it is driven with a low voltage of 5 V to 15 V direct current, so that it is easy to manufacture and design a driving circuit.

Therefore, the organic electroluminescent device having the advantages as described above has recently been used in various IT devices such as a TV, a monitor, and a mobile phone.

Hereinafter, the basic structure of the organic electroluminescent device will be described in more detail.

1 is a schematic cross-sectional view of a portion of a display region of a conventional organic electroluminescent device.

The organic electroluminescent device 1 is mainly composed of a first substrate having an array element and an organic electroluminescent diode E and a second substrate 70 for encapsulation facing the first substrate.

The array element included in the organic EL device substrate 10 includes a switching thin film transistor (not shown) connected to a gate and a data line, and a driving thin film transistor DTr connected to the organic light emitting diode E And the organic electroluminescent diode E comprises a first electrode 47 connected to the driving thin film transistor DTr and an organic light emitting layer 55 and a second electrode 58.

In the organic electroluminescent device 1 having such a configuration, light generated from the organic light emitting layer 55 is emitted toward the first electrode 47 or the second electrode 58 to display an image. In the organic electroluminescent device 1, an array device is provided under the organic electroluminescent diode, and in consideration of the aperture ratio and the like, the organic electroluminescent device 1 is provided with an upper light emitting mode for displaying an image using light emitted toward the second electrode 58 .

In the conventional organic electroluminescent device 1 having such a configuration, when a voltage is applied to the first and second electrodes 47 and 58, electrons and holes are supplied to the organic light emitting layer 55 And recombination is performed in the organic light emitting layer 55 to generate light.

The light emitted from the organic light emitting layer 55 is emitted toward the first electrode 47 and the second electrode 58 and passes through the first substrate 10 in the case of the bottom emission type through the internal reflection, In the case of the top emission type, light is emitted to the outside through the second substrate 70, and the user can view the image.

However, since the light generated in the organic light emitting layer 55 passes through the components located above and below the organic light emitting layer 55, a loss is generated therein, so that light incident on the user's eye substantially passes through the organic light emitting layer 55 to about 20 to 30% of the light emitted from the light source.

More specifically, the light generated in the organic light emitting layer 55 passes through the elements included in the organic electroluminescent device 1, and satisfies the total reflection condition due to the Snell's law at a certain angle or more The light totally reflected on the surface of the organic electroluminescent device 1 as if it passes through the waveguide so that the wave guide phenomenon disappears and disappears finally .

Therefore, in the conventional organic electroluminescent device 1, there is a large amount of light that disappears through the side surface of the first electrode 47 due to the wave guide as described above. In particular, the light efficiency is lowered. The organic electroluminescent device 1 is required to improve the luminous efficiency.

SUMMARY OF THE INVENTION The present invention has been conceived to solve the problems described above, and it is an object of the present invention to provide an organic electroluminescent device and method of manufacturing the same, which can improve light efficiency by minimizing light, The purpose.

According to an aspect of the present invention, there is provided an organic electroluminescent device including a substrate having a plurality of emission regions defined therein, a thin film transistor provided on the substrate, A metal pattern provided for each of the light emitting regions, a protective layer disposed on one electrode of the thin film transistor and over the metal pattern, and a convex-concave structure provided for each light emitting region on the protective layer, A plurality of light emitting regions formed on the first electrodes, and a plurality of light emitting regions formed in the plurality of light emitting regions, And a second electrode provided on the organic light emitting layer.

At this time, the metal pattern has a lattice shape corresponding to the inside of each light emitting region or a plurality of dot patterns arranged at a predetermined interval.

The metal pattern has the same thickness as one electrode of the thin film transistor.

The metal pattern may include a first portion having a lattice shape or a plurality of dot patterns spaced apart from each other by a predetermined distance corresponding to the inside of each luminescent region and a first portion surrounding each luminescent region, Wherein the second portion has a first thickness equal to that of the source and drain electrodes, and the first portion has a thickness equal to that of the source and drain electrodes, And a second thickness that is less than the first thickness, wherein the first thickness is 1000 to 3000 angstroms, and the second thickness is 20 to 900 angstroms.

One electrode of the thin film transistor is an electrode provided at the top of the laminated structure of the thin film transistor.

A method of manufacturing an organic electroluminescent device according to an embodiment of the present invention includes forming a plurality of light emitting regions on a substrate, Forming a protective layer on the electrode and the metal pattern, forming a metal pattern on the protective layer, and forming a metal pattern on the protective layer, Forming a bank that surrounds the plurality of light emitting regions and overlaps the edge of the first electrode; forming a plurality of light emitting regions in the plurality of light emitting regions surrounded by the banks, Forming a light emitting layer, and forming a second electrode on the organic light emitting layer.

At this time, one electrode of the thin film transistor and the metal pattern are formed to have the same thickness.

The metal pattern may include a first portion having a lattice shape or a plurality of dot patterns spaced apart from each other by a predetermined distance corresponding to the inside of each light emitting region and a first portion surrounding each light emitting region, And one end of the thin film transistor is formed as a second part that is exposed to the outside of the bank. In this case, one electrode of the thin film transistor and one electrode of the thin film transistor are spaced apart The step of forming a metal pattern corresponding to each of the plurality of light emitting regions may include forming a metal material layer having a first thickness on the insulating layer and then performing a patterning process including diffraction exposure or halftone exposure, Wherein one electrode of the thin film transistor and the second portion have the first thickness and the second portion has the second thickness, 1 < / RTI > thickness.

The top emission type organic electroluminescent device according to an embodiment of the present invention has a concavo-convex structure in each light emission region by a pattern in which a first electrode serving as an anode electrode is formed at a lower portion, And the light radiated to the side of the first electrode itself is suppressed so as to reduce the amount of light radiated to the side of the first electrode. Thus, the amount of light passing through the first substrate or the second substrate surface to the outside is reduced Thereby improving the light efficiency.

1 is a schematic cross-sectional view of a portion of a display region of a conventional organic electroluminescent device
2 is a circuit diagram of one pixel of a general organic electroluminescent device.
3 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a first embodiment of the present invention.
FIGS. 4A, 4B, 4C, and 4D are diagrams illustrating various plan views of a metal pattern provided in one light emitting region in an organic electroluminescent device according to an embodiment of the present invention; FIGS.
FIG. 5 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a first embodiment of the present invention, in which the metal pattern disclosed in FIG. 4a or 4c is provided.
FIG. 6 is a cross-sectional view of a first electrode in a conventional organic electroluminescent device according to an embodiment of the present invention and a comparative example. FIG. 6 also shows progress of light totally reflected inside the first electrode.
FIG. 7 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a second embodiment of the present invention, in which a metal pattern including first and second portions is provided. FIG.
FIG. 8 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a second embodiment of the present invention, in which a metal pattern having only a lattice pattern or a plurality of dot pattern patterns is provided.
FIGS. 9A to 9K are views illustrating a method of driving an organic electroluminescent device according to a first embodiment of the present invention and forming a metal pattern together with source and drain electrodes of a thin film transistor and forming an organic light emitting diode Cross-section.
FIGS. 10A to 10F are cross-sectional views illustrating a step of forming a metal pattern together with a source and a drain electrode of a thin film transistor in an organic electroluminescent device according to a second embodiment of the present invention. FIG.

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the drawings.

First, the basic structure and operating characteristics of the organic electroluminescent device will be described in detail with reference to the drawings.

2 is a circuit diagram of one pixel of a general organic light emitting device.

As shown in the figure, each pixel defined as an area surrounded by a gate wiring and a data wiring in an organic electroluminescent device includes a gate wiring, a data wiring, a power wiring, a switching thin film transistor STr, A thin film transistor DTr, a storage capacitor StgC, and an organic light emitting diode E.

The gate line GL is formed in the first direction and is formed in the second direction intersecting with the first direction to define the pixel regions P A data line DL is formed, and a power supply line PL for applying a power source voltage is formed at a distance from the data line DL.

A switching thin film transistor STr is formed in a portion of each pixel where the data line DL and the gate line GL cross each other and a driving thin film transistor ST2 electrically connected to the switching thin film transistor STr DTr) are formed.

At this time, the first electrode, which is one terminal of the organic electroluminescent diode E, is connected to the drain electrode of the driving thin film transistor DTr, the second electrode which is the other terminal is connected to the power supply line PL, The power supply line PL transfers a power supply voltage to the organic light emitting diode E.

A storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on and the signal of the data line DL is transmitted to the gate electrode of the driving thin film transistor DTr, The thin film transistor DTr is turned on so that light is output through the organic light emitting diode E.

At this time, when the driving thin film transistor DTr is turned on, the level of a current flowing from the power supply line PL to the organic light emitting diode E is determined, It becomes possible to implement a gray scale.

The storage capacitor StgC maintains a constant gate voltage of the driving thin film transistor DTr when the switching thin film transistor STr is turned off so that the switching thin film transistor STr is turned off the level of the current flowing through the organic electroluminescent diode E can be maintained constant until the next frame even if the off state is established.

Hereinafter, the structure of the organic electroluminescent device according to the embodiment of the present invention for displaying an image by such driving will be described.

≪ Embodiment 1 >

3 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a first embodiment of the present invention. In this case, for convenience of description, a region where a switching thin film transistor (not shown) is formed in each pixel region P is referred to as a switching region (not shown), a region where a driving thin film transistor DTr is formed is referred to as a driving region DA , And a region where the organic light emitting layer 155 is provided is defined as a light emitting region (EA).

The organic EL device 101 according to the first embodiment of the present invention includes a driving and switching thin film transistor DTr (not shown), a first electrode 147, an organic light emitting layer 155, And a second substrate 170 for protecting and encapsulating the organic electroluminescent diode E. The first substrate 110 includes an organic electroluminescent diode E formed of a light emitting diode 165, At this time, the second substrate 170 may be replaced with an inorganic insulating film and / or an organic insulating film, or may be omitted by attaching a film.

First, the structure of the first substrate 110 including the driving and switching thin film transistor DTr (not shown) and the organic electroluminescent diode E will be described.

On the first substrate 110, a driving region DA and a switching region (not shown) in each pixel region P are made of pure polysilicon, and a central portion thereof is formed with a first region 113a in which a channel is formed, A semiconductor layer 113 is formed on both sides of the first region 113a and includes a second region 113b doped with a high concentration of impurities.

A buffer layer (not shown) made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is formed between the semiconductor layer 113 and the first substrate 110, May be further formed.

The buffer layer (not shown) prevents the deterioration of the characteristics of the semiconductor layer 113 due to the release of alkali ions from the inside of the first substrate 110 when the semiconductor layer 113 is crystallized.

A gate insulating layer 116 is formed on the entire surface of the first substrate 110 so as to cover the semiconductor layer 113. In the driving region DA and the switching region (not shown), the gate insulating layer 116 A gate electrode 120 is formed to correspond to the first region 113a of the semiconductor layer 113. [

The gate insulating layer 116 is connected to a gate electrode (not shown) of a switching thin film transistor (not shown) and extends in one direction to form a gate wiring (not shown). At this time, the gate electrode 120 (not shown) and the gate wiring (not shown) constituting the driving and switching thin film transistor DTr (not shown) are formed of a metal material having a low resistance property such as aluminum (Al) AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy (MoTi), or a combination of two or more materials.

In addition, an interlayer insulating film 123 is formed on the entire surface of the first substrate 110 over the gate electrode 120 (not shown) and the gate wiring (not shown). The interlayer insulating layer 123 and the gate insulating layer 116 under the semiconductor layer contact hole 125 expose the second regions 113b located on both sides of the first region 113a .

A data line 130 is formed on the interlayer insulating layer 123 including the semiconductor layer contact hole 125 so as to intersect the gate line (not shown) to define the pixel regions P.

The first region 113b and the second region 113b are separated from each other in the driving region DA and the switching region (not shown) above the interlayer insulating layer 123 and are exposed through the semiconductor layer contact hole 125, And drain electrodes 133 and 136 are formed.

A semiconductor layer 113 including the source and drain electrodes 133 and 136 and a second region 113b contacting the electrodes 133 and 136 and a gate electrode The insulating film 116 and the gate electrode 120 constitute a driving thin film transistor DTr and a switching thin film transistor (not shown), respectively.

The source and drain electrodes 133 and 136 spaced apart from the data line 130 may also be formed of a metal material having low resistance characteristics such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy (MoTi), or a single layer or a multilayer structure.

The switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate wiring (not shown) and the data wiring 130, and the data wiring (not shown) The driving TFT DTr is connected to the power supply line (not shown) and the organic light emitting diode E (not shown).

In the organic EL device 101 according to the first embodiment of the present invention, the driving thin film transistor DTr and the switching thin film transistor (not shown) have a polysilicon semiconductor layer 113 and a top gate type type) is shown as an example.

However, the driving and switching thin film transistor (DTr) (not shown) may be a bottom gate type having a semiconductor layer made of amorphous silicon or an oxide semiconductor material.

A gate insulating film, a semiconductor layer made of an amorphous silicon ohmic contact layer spaced apart from the active layer of pure amorphous silicon, and a source electrode spaced apart from the source electrode, And a gate electrode, a gate insulating film, an oxide semiconductor layer, an etch stopper, and a stacked structure of source and drain electrodes spaced from each other on the etch stopper and contacting the oxide semiconductor layer, respectively, .

In the case of the first substrate on which the bottom gate type driving and switching thin film transistor is formed, the gate wiring is formed to be connected to the gate electrode of the switching thin film transistor in the same layer on which the gate electrode is formed, And the source electrode of the second transistor is connected to the source electrode.

Further, in the case where the semiconductor layer is formed of an oxide semiconductor layer, the source and drain electrodes are positioned at the lowest layered structure, the oxide semiconductor layer is located between the source and drain electrodes and the spaced apart region thereof, and the gate insulating film is interposed Or a top gate structure in which a gate electrode is formed.

On the other hand, a power wiring (not shown) is formed on the same layer on which the gate wiring (not shown) is formed or the same layer on which the data wiring (not shown) is formed. DTr).

One of the most characteristic structures of the organic electroluminescent device 101 according to the first embodiment of the present invention is an electrode provided at the top of the driving and switching thin film transistor DTr (not shown) The light emitting region EA of the same layer on which the electrodes 133 and 136 are formed is formed of the same metal material as the source and drain electrodes 133 and 136 of the driving and switching thin film transistor DTr And a metal pattern 138 is formed on the surface of the substrate. The metal pattern 138 is spaced apart from the source and drain electrodes 133 and 136.

Although the metal pattern 138 is formed on the same layer on which the source and drain electrodes 133 and 136 are formed, the metal pattern 138 is not limited to the layer on which the source and drain electrodes 133 and 136 are formed And a gate electrode (for example, a thin film transistor having a top gate structure including an oxide semiconductor layer) is disposed on the uppermost layer of the driving or switching thin film transistor Dtr (not shown) .

FIGS. 4A, 4B, 4C, and 4D are views showing various plan views of a metal pattern provided in one light emitting region in the organic electroluminescent device according to the embodiment of the present invention.

A metal pattern 138 made of the same metal material as the source and drain electrodes (133 and 136 in FIG. 3) is formed in the same layer on which the source and drain electrodes 133 and 136 are formed, . As shown in FIG. 4A, the metal pattern 138 may be formed in a lattice shape within each light emitting region EA, or may be formed in a lattice shape in each light emitting region EA, And a second portion 138b connecting the first portion 138a and the lattice-shaped end of the light emitting region EA to each other. At this time, the second portion 138b overlaps with the bank 150 defining the light emitting region EA by being positioned at the boundary of the light emitting region EA. Further, the second portion 138b overlaps the bank 150, It is characterized by being exposed. That is, the second portion 138b is overlapped with the bank 150 at one end and exposed at the other end.

Alternatively, as shown in FIG. 4C, the metal pattern 138 may be formed in a dot shape having a predetermined interval in each light emitting area EA.

 4D, the metal pattern 138 is divided into two portions, and a first portion 138a and a second portion 138b are formed in the light emitting region EA, (EA) extending from the boundary to the inside of the light emitting area (EA) by a predetermined width and including a boundary of each light emitting area (EA) (138b). The second portion 138b overlaps with the bank 150 defining the light emitting region EA and has a side edge exposed to the outside of the bank 150 at a predetermined width . That is, the second portion 138b overlaps the bank 150 with one end, and the other end is exposed.

4A and 4B illustrate that the metal pattern 138 is formed in a rectangular shape in each light emitting region EA. However, the metal pattern 138 may have a rectangular shape, The metal pattern 138 may be formed to have a rhombic or parallelogram shape.

On the other hand, in FIG. 3, for example, the metal pattern 138 having the planar shape shown in FIG. 4B or 4d composed of the first portion 138a and the second portion 138b is provided, And a second portion 138b of the light emitting region EA which is formed so as to surround the light emitting region EA with respect to the boundary of the light emitting region EA. Portion 138a is provided.

FIG. 5 is a cross-sectional view of a portion of a display region of the organic electroluminescent device 101 according to the first embodiment of the present invention, in which the metal pattern 138 shown in FIG. 4A or FIG. 4C is provided. Here, in FIG. 5, the first electrode 147 has a single-layer structure as an example.

5, all the components except for the metal pattern 138 are the same as those shown in Fig. 3, except that the metal pattern 138 is formed in each luminescent region EA as shown in Fig. 4A or 4C, Type or a plurality of dot patterns spaced apart from each other by a predetermined interval. The metal pattern 138 may be in the form of a lattice or a plurality of dot patterns without a second portion 138b which rims on the respective light emitting regions EA so that any metal pattern 138 is formed on the portion overlapping the bank 150. [ Is not formed. Other components are the same as those described with reference to FIG. 3, and thus description of other components will be omitted.

3 and 5, the metal pattern 138 may have the same lattice size or the same spacing in each luminescent region EA, so that the metal pattern 138 may be formed at the same position for each luminescent region EA, It is characterized by being formed with sex.

In this case, in the organic light emitting device 101 according to the first embodiment of the present invention, the metal pattern 138 provided in each of the light emitting regions EA is formed in the same layer And has the same thickness as the source and drain electrodes 133 and 136.

The formation of the metal pattern 138 in each of the light emitting regions EA can be performed at the same time when the source and drain electrodes 133 and 136 are formed, so that no additional process is required. The first electrode 147 provided with a protective layer is affected by the metal pattern 138 to have a regular irregular structure without having a flat surface. The reason why the surface of the first electrode 147 has a concavo-convex structure will be described later.

The drain electrode 136 of the driving thin film transistor DTr is exposed on the front surface of the first substrate 110 on the driving and switching thin film transistor DTr and the metal pattern 138, A first passivation layer 140 having a contact hole 143 is formed.

The first passivation layer 140 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x) that can be deposited through a chemical vapor deposition apparatus, Is formed by reflecting the step difference.

That is, the first passivation layer 140 is provided on the metal pattern 138 corresponding to each light emitting area EA, and the metal pattern 138 is formed in a convex shape on the part where the metal pattern 138 is formed, (EA) is characterized in that its surface has a concavo-convex structure.

Although only one first passivation layer 140 is shown in the drawing, the organic insulating material may be formed of a photoacid, for example, by a coating method on the first passivation layer 140 And a second protective layer (not shown) having a thickness similar to that of the first protective layer 140 may be further provided.

The first passivation layer 140 made of an inorganic insulating material is formed by reflecting the lower step as it is by the nature of being formed by vapor deposition, while the second passivation layer (not shown) is an organic insulating material made of an organic insulating material. The effect of alleviating the step generated by the lower component is realized and at the same time, the sharp step is smoothly formed as if it is rounded. When the second protective layer (not shown) is formed, a drain contact hole exposing the drain electrode of the driving TFT is formed corresponding to the first passivation layer 140 and the second passivation layer (not shown).

Next, the drain electrode 136 of the driving thin film transistor DTr and the drain contact 136 of the driving thin film transistor DTr are formed on the first passivation layer 140 (the second passivation layer (not shown) when a second passivation layer And the first electrode 147 is formed for each light emitting region (EA) region through the hole (143).

At this time, the first electrode 147 has a double layer structure or a single layer structure.

When the first electrode 147 has a double layer structure, the organic light emitting device 101 of the upper emission type is formed. In this case, the lower layer may include a metal material such as an aluminum alloy (AlNd) ), APC (Ag, Pd, Cu alloy), and the upper layer is made of a transparent conductive material having a high work function value such as indium-tin-oxide (ITO), indium-zinc- -Oxide (SnO ₂ ), and zinc-oxide (ZnO ₂ ), thereby serving as an anode electrode.

When the first electrode 147 has a single layer structure, the organic light emitting device 101 of the lower emission type is formed. A transparent conductive material having a high work function value, for example, indium-tin oxide So as to serve as an anode electrode.

In FIG. 3, the first electrode 147 has a double layer structure. In FIG. 5, the first electrode 147 has a single layer structure made of a transparent conductive material having a high work function value For example.

The first electrode 147 is one of the most characteristic structures of the organic electroluminescent device 101 according to the embodiment of the present invention. The first electrode 147 has a metal pattern 138 (Or a second protective layer (not shown)) having a concavo-convex structure due to the influence of the first protective layer 140 (or the second protective layer (not shown)).

When the first electrode 147 is formed to have a concavo-convex structure, the wave guide phenomenon is suppressed, so that the light emitted from the side of the organic electroluminescent device 101 disappears due to waveguiding through total internal reflection in the first electrode 147 The light emitted from the organic light emitting layer 155 is appropriately scattered or refracted so as to be emitted toward the front surface viewed by the user so that the light emitted from the organic light emitting layer 155 can be emitted toward the user in the direction in which the first substrate 110 or the second substrate is viewed, So that the light efficiency is improved.

6 is a cross-sectional view of the organic electroluminescent device 101 according to an embodiment of the present invention and a comparative example of the conventional organic electroluminescent device 101, showing the progress of the total internal light in the first electrode 147 Fig. At this time, in the embodiment of the present invention, only the first electrode 147 having a single layer structure made of a transparent conductive material capable of internal waveguiding or only the upper layer in a double layer structure is shown.

Referring to the drawings, the first electrode 47 included in the conventional organic electroluminescent device of the comparative example has a plate shape having a flat surface. Therefore, the total reflection of the light incident on the first electrode 47 is totally reflected, so that there is no component for changing the path of the totally reflected light. Therefore, The light is emitted to the side of the organic electroluminescent device and disappears.

On the other hand, in the case of the organic electroluminescent device according to the embodiment of the present invention, since the metal pattern 138 is provided on the lower part, the first electrode 147 itself has a convex-concave structure, The total reflection light of the light incident on the inside of the first electrode 147 reaches the convex portion and the reflection angle is changed to change the light path so that the total reflection condition is overcome, The light efficiency is increased.

The first electrode 147 of the portion corresponding to the portion where the metal pattern 138 is formed is formed such that the side surface of the step portion is not completely perpendicular to the first substrate surface but inclined at a predetermined angle, The reflection angle is changed and the total reflection condition is canceled. In addition, when a second protective layer (not shown) made of an organic insulating material is further provided on the metal pattern 138 in addition to the first protective layer 140, the uneven portion of the first electrode 147 itself may have a smooth surface The reflection angle of the light can be further changed by repeating the total reflection condition inside the first electrode and the light is emitted to the surface of the first electrode 147, have.

3, the light emitting region EA overlaps with the edge of the first electrode 147 on the first electrode 147 having the above-described shape, and on the first passivation layer 140, A bank 150 in the form of a dam is formed at the periphery of the light emitting region EA.

4B and 4D), the bank 150 may be formed with the second portion 138b in the case where the metal pattern 138 includes the second portion 138b And is exposed to the other end of the second portion 138b by a predetermined width.

On the other hand, in the metal pattern 138, the bank 150 is overlapped with one side end and the other side is exposed to the outside of the bank 150 to a predetermined width. This is because the upper side of the first electrode 147 To reduce the pile-up phenomenon of the organic light-emitting layer 155 provided in the organic light-

The 'pile-up phenomenon' is a phenomenon in which when the organic luminescent layer 155 is formed by using an ink jet apparatus, the organic luminescent material is sprayed or dropped on each luminescent region EA and then dried The periphery of the organic luminescent material including the portion contacting with the bank 150 during the drying and curing process is not parallel to the surface of the first substrate 110 but has a predetermined angle The organic luminescent material migrates to the edge portion of each luminescent region EA internally as it is dried from the central portion of each luminescent region EA and finally dried in this state, It means that it is formed to be thick in contrast.

Due to the pile-up phenomenon, the organic light emitting layer 155 is formed flat in the central region of each light emitting region EA. However, the thickness of the organic light emitting layer 155 gradually increases toward the portion adjacent to the bank 150 Sectional shape.

Accordingly, as a method for suppressing such a file-up phenomenon, a method of depositing a material having hydrophilic properties into a first bank having a first width and a material having a hydrophobic property on the first bank, And the organic light emitting layer 155 is formed so as to overlap the upper portion of the first bank. In this case, the first bank is formed along the rim of the light emitting region (EA), so that when the organic light emitting material is dropped for forming the organic light emitting layer 155, the organic light emitting material is collected at the center of each light emitting region Thereby reducing the phenomenon that the thickness of the organic light emitting layer 155 located at the edge portion of the light emitting region EA adjacent to the bank becomes thicker than the center portion of each pixel region.

In order to form such a dual-layered bank, one bank of the characteristic bank made of different materials must be formed and then the second bank must be formed. Therefore, one masking process is further required, resulting in a low productivity per unit time due to the addition of the manufacturing process. The manufacturing cost is increased.

However, the organic electroluminescent device 101 having the metal pattern 138 including the second portion 138b of the light emitting region EA of the organic electroluminescent device 101 according to the embodiment of the present invention Since the second portion 138b of the metal pattern 138 serves as a first bank of the double layer structure, the organic electroluminescent device 101 having the banks of the double layer structure without forming a separate first bank, It is possible to realize the effect of increasing the aperture ratio of the light emitting area EA by increasing the file up and reducing the luminance by the increase of the aperture ratio.

The organic light emitting layer 155 may be formed by thermal evaporation using a shadow mask without using an inkjet apparatus. When the organic light emitting layer 155 is formed by thermal evaporation using the shadow mask, As shown in Fig. 4A or Fig. 4C, only the inside of the luminescent region EA is replaced with the second portion 138b which rims each luminescent region EA instead of the metal pattern 138 having the second portion, It is preferable that a metal pattern 138 having only a grid shape or a plurality of dot pattern shapes is formed.

3 and 5, an organic light emitting layer 155 is formed on the first electrode 147 in each of the light emitting regions EA surrounded by the banks 150. Referring to FIG. At this time, the organic light emitting layer 155 may be made of a material that emits red, green, or blue light in a sequential manner with respect to each pixel region P, or may be formed of a material that emits white Or an organic light emitting material that emits light.

The organic light emitting layer 155 may be formed by spraying or dropping a liquid organic light emitting material through an ink jet apparatus or a nozzle coating apparatus, drying and curing the organic light emitting layer 155, or may be formed by thermal evaporation using a shadow mask It is possible.

 Although the organic light emitting layer 155 is shown as a single layer composed only of an organic light emitting material in the drawing, the organic light emitting layer 155 may have a multi-layer structure to enhance the light emitting efficiency.

When the organic emission layer 155 has a multilayer structure, a hole injection layer, a hole transport layer (hole injection layer), a hole injection layer layer structure of a hole transporting layer, an electron transporting layer, and an electron injection layer, or a hole transporting layer, an organic electroluminescent layer, A hole injection layer, an emitting material layer, an electron transporting layer, and an electron injection layer, and further, a hole transporting layer, an emitting material layer, layer, and an electron transporting layer.

A second electrode 165 is formed on the entire surface of the organic emission layer 155. The second electrode 165 may be formed of a metal having a relatively low work function value such as aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg) Gold (Au), aluminum magnesium alloy (AlMg), and serves as a cathode electrode.

In this case, the first electrode 147, the organic light emitting layer 155, and the second electrode 165, which are sequentially stacked on the light emitting region EA, form an organic light emitting diode E.

Meanwhile, a second substrate 170 for encapsulation is provided corresponding to the first substrate 110 of the organic electroluminescent device 101 according to the embodiment of the present invention.

The first substrate 110 and the second substrate 170 are provided with an adhesive agent (not shown) made of a sealant or a frit along an edge thereof. The adhesive agent (not shown) And the second substrate 170 is adhered to maintain the panel state. At this time, a vacuum state is formed between the first substrate 110 and the second substrate 170 which are spaced apart from each other, or an inert gas atmosphere may be obtained by being filled with an inert gas.

In this case, the second substrate 170 for the encapsulation may be made of plastic having a flexible property, or may be made of a glass substrate.

Meanwhile, although the organic EL device 101 according to the above-described embodiment includes the second substrate 170 for encapsulation in a state of being separated from the first substrate 110, The substrate 170 may be configured to contact the second electrode 165 provided on the uppermost layer of the first substrate 110 in the form of a film including an adhesive layer, A capping layer (not shown) may be formed by further providing an organic insulating layer (not shown) or an inorganic insulating layer (not shown). The organic insulating layer (not shown) (Not shown). In this case, the second substrate 170 may be omitted.

In the organic electroluminescent device 101 according to the first embodiment of the present invention having such a structure, when the first electrode 147 has a single layer structure made of a transparent conductive material having a relatively high work function value, And the first electrode 147 is driven by a top emission type when a lower layer made of a metal material having a high reflection efficiency and an upper layer made of a transparent conductive material having a relatively high work function value have a double layer structure.

Therefore, the metal pattern 138, which is a characteristic feature of the present invention, can be applied to the organic light emitting device 101 of the upper light emitting type or the lower light emitting type.

≪ Embodiment 2 >

7 and 8 are sectional views of a portion of a display region of the organic electroluminescent device 201 according to the second embodiment of the present invention, in which the metal pattern 138 including the first and second portions 138b is provided (See FIG. 7) and a metal pattern 138 having a lattice pattern or a plurality of dot pattern patterns (see FIG. 8). At this time, the first electrodes 147 all have a bilayer structure. For convenience of explanation, a region where a switching thin film transistor (not shown) is formed in each pixel region P is referred to as a switching region (not shown), and a region where a driving thin film transistor DTr is formed is defined as a driving region DA And a region where the organic light emitting layer 155 is provided is defined as a light emitting region EA.

The organic electroluminescent device 201 according to the second embodiment of the present invention has a structure in which only the sectional shape of the metal pattern 138 is the same as that of the organic electroluminescent device according to the first embodiment of the present invention Only the sectional shape of the metal pattern 138 will be briefly described because the other components are the same as those of the organic electroluminescent device according to the first embodiment of the present invention (FIGS. 3 and 5).

Referring to FIG. 7, the first and second portions 238a and 238b are formed of the same metal material as the source and drain electrodes 133 and 136 in the same layer in which the source and drain electrodes 133 and 136 are formed. A first portion 238a having a lattice shape or a plurality of dot pattern shapes is provided inside each light emitting region EA and each luminescent region EA is surrounded by a metal pattern 238 And a second portion 238b which is overlapped with the bank 150 at one end and the other end exposed to the outside of the bank 150 is provided.

3 and FIG. 5) is that the first portion 238a of the metal pattern 238 is thicker than the thickness of the source and drain electrodes 133 and 136 And the second portion 238b has a first thickness t1 that is the same as the source and drain electrodes 133 and 136. The second portion 238b has a second thickness t2 that is smaller than the first thickness t1.

The first thickness t1 of the source and drain electrodes 133 and 136 is usually about 1000 to 3000 ANGSTROM for smoothly performing the role of the electrode, (20 to 900 ANGSTROM), which is sufficient to form the concavo-convex structure of the substrate.

When the metal pattern 238 provided in each of the light emitting regions EA has the same first thickness t1 as that of the source and drain electrodes 133 and 136, The light emitting efficiency of the organic light emitting layer 155 may be reduced. In this case, in order to prevent such a problem from occurring, The thickness of the first portion 238a of the metal pattern 238 is configured to have a second thickness t2 that is thinner than the first thickness t1 as described above.

The second portion 238b of the metal pattern 238 is formed to have the same thickness as the first thickness t1 of the source and drain electrodes 133 and 136 because the organic light emitting layer 155 is formed by an ink jet or nozzle coating apparatus Layer structure according to the comparative example, the thickness of the first bank is typically several hundreds to several thousands of angstroms. In order to reflect this, the metal pattern 238 are configured to have a first thickness t1 equal to the thickness of the source and drain electrodes 133,

8, the organic electroluminescent device 201 according to the second embodiment of the present invention, in which the second portion is omitted and the metal pattern 238 is formed only in the form of a lattice pattern or a plurality of dot patterns, It can be seen that the source and drain electrodes 133 and 136 have a first thickness t1 and the metal pattern 238 has a second thickness t2 that is thinner than the first thickness t1 have.

Hereinafter, a method of manufacturing the organic electroluminescent device according to the first and second embodiments of the present invention will be described. In this case, the organic electroluminescent device according to the first and second embodiments of the present invention is characterized by having a metal pattern. In a switching and driving thin film transistor, The manufacturing method of the organic electroluminescent device is the same as that of the organic electroluminescent device. Therefore, the description thereof will be omitted or briefly described, and the method for forming the metal pattern will be mainly described.

≪ Method of Manufacturing Organic Electroluminescent Device 101 According to First Embodiment >

9A to 9K show the organic light emitting display according to the first embodiment of the present invention in which the source and drain electrodes 133 and 136 of the driving and switching thin film transistor DTr (not shown) 138), and forming an organic electroluminescent diode (E). In this case, for convenience of description, a region where a switching thin film transistor (not shown) is formed in each pixel region P is referred to as a switching region (not shown), a region where a driving thin film transistor DTr is formed is referred to as a driving region DA , And a region where the organic light emitting layer 155 is provided is defined as a light emitting region (EA).

First, as shown in FIG. 9A, gate wirings (not shown) and data wirings (not shown) crossing each other and a gate wiring (not shown) are formed on a first substrate 110 made of a transparent material, (Not shown) are formed in the switching region (not shown) and the driving region DA, and the semiconductor layer 113 of polysilicon sequentially stacked and the gate insulating film 116 An interlayer insulating film 123 having a gate electrode 120 and a semiconductor layer contact hole 125 exposing the semiconductor layer 113 of polysilicon are formed.

Although a polysilicon semiconductor layer 113 is formed on the gate electrode 120 and the gate electrode 120 is formed on the polysilicon semiconductor layer 113, the gate electrode 120 may be formed on the polysilicon semiconductor layer 113. It is possible. At this time, the semiconductor layer may have a structure of an amorphous silicon active layer and an impurity amorphous silicon ohmic contact layer thereon, or an oxide semiconductor material to form a single-layer oxide semiconductor layer. In this case, And an etch stopper exposing both ends thereof on the layer may further be provided.

Next, as shown in FIG. 9B, a metal material such as aluminum (Al), an aluminum alloy (AlNd), or the like is formed on the entire surface of the first substrate 110 over the interlayer insulating film 123 (or the semiconductor layer and the gate insulating film) A metal material layer 131 having a first thickness t1 is formed by depositing at least one of copper (Cu), copper alloy, molybdenum (Mo), and molybdenum alloy (MoTi).

Then, a photoresist layer 188 is formed on the metal material layer 131 by applying a photoresist to the entire surface of the first substrate 110.

Next, an exposure mask 191 having a transmissive area TA and a blocking area BA is placed on the photoresist layer 180, and the photoresist layer 180 is irradiated with the exposure mask 191 Exposure is performed. At this time, when the photoresist layer 180 is of a negative type, the photoresist layer 180 is formed so that the transmissive areas TA correspond to the portions where the source and drain electrodes 133 and 136 of FIG. 9K and the metal pattern 138 of FIG. And the exposure mask 191 is positioned so that the blocking region BA corresponds to the other regions, and the exposure proceeds. When the photoresist layer 180 is of a positive type, the blocking regions BA correspond to the portions where the source and drain electrodes 133 and 136 of FIG. 9K and the metal pattern 138 of FIG. The exposure mask 191 is positioned so that the transmissive area TA corresponds to the other areas, and then the exposure progresses. In the drawing, the negative type photoresist layer 180 is shown as an example.

Next, as shown in FIG. 9C, a photoresist pattern 181 is formed on the exposed metal layer 131 by performing a developing process on the exposed photoresist layer 180 (FIG. 9B).

Next, as shown in FIG. 9D, etching is performed on the metal material layer (131 in FIG. 9C) exposed outside the photoresist pattern 181 to form the driving regions DA and In the switching region (not shown), source and drain electrodes 133 and 136, which are in contact with the semiconductor layer 113 of the polysilicon through the semiconductor layer contact hole 125 and have a first thickness t1, And at the same time, the metal pattern 138 having the first thickness t1 is formed in each light emitting region EA. Here, the metal pattern 138 may have any planar shape as shown in Figs. 4A to 4D. In the drawing, the metal pattern 138 including the first portion 138a and the second portion 138b shown in FIG. 4B or FIG. 4D is formed by way of example.

At this time, the polysilicon semiconductor layer 113, the gate insulating film 116, the gate electrode 120, and the semiconductor layer contact hole 125, which are sequentially stacked in the switching and driving regions (not shown) And source and drain electrodes 133 and 136 spaced apart from each other form a switching and driving thin film transistor (not shown) (DTr).

Next, as shown in FIG. 9E, the photoresist pattern (181 in FIG. 9D) formed on the source and drain electrodes 133 and 136 and the metal pattern 138 is ashed or striped .

Next, as shown in FIG. 9F, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the source and drain electrodes 133 and 136 and the metal pattern 138, A protective layer 140 is formed and patterned to form a drain contact hole 143 for exposing the drain electrode 136 of the driving thin film transistor DTr in the driving region DA. The first passivation layer 140 is characterized in that the surface of the first passivation layer 140 has an irregular convexo-concave structure by the metal pattern 138 provided under the light emitting area EA.

Although not shown in the drawing, an organic insulating material is applied on the first passivation layer 140 to form a second passivation layer (not shown) before forming the drain contact hole 143, The drain electrode 143 may be formed by patterning the layer (not shown) and the first passivation layer 140 simultaneously. At this time, the second protective layer (not shown) also has a concavo-convex structure formed by the metal pattern 138 on its surface. In the case where the second protective layer (not shown) is formed, the height or depth of the concave and convex portions can be made smaller than that of the first protective layer 140 alone, and the side surface of the concave and convex portions can also be curved.

Next, as shown in FIG. 9G, a metal material such as an aluminum alloy (AlNd), silver (Ag), or the like is deposited on the first passivation layer 140 (or the second passivation layer (ITO), indium-zinc-oxide (IZO), indium-zinc-oxide (IZO), or the like, having a high work function value, A conductive layer (not shown) having a bilayer structure of a lower layer and an upper layer may be formed by depositing any one of tin-oxide (SnO ₂ ) and zinc-oxide (ZnO ₂ ) (Not shown) having a high work function value is deposited on the second passivation layer (not shown) to form a conductive layer (not shown) having a single layer structure, and patterned to form the drain contact hole 143 which are in contact with the drain electrode 136 of the driving thin film transistor DTr through the first electrode 147, Forms. In the drawing, the first electrode 147 has a bilayer structure.

The first electrode 147 is formed in the light emitting region EA itself in a convex-concave structure due to the influence of the irregularities provided on the surface of the first passivation layer 140 provided below the first electrode 147 . That is, the first electrode 147 is formed to be convex in correspondence with the portion where the metal pattern 138 is formed, and is formed in a concave shape corresponding to a portion where the metal pattern 138 is not formed.

Next, as shown in FIG. 9H, the first electrode 147 is coated with a photosensitive material such as polyimide (polyimide) containing a fluorine (F) polymer having a photosensitive property and further having a hydrophobic property. A bank material layer (not shown) is formed by applying a mixture of any one or more of the above materials (for example, polyvinylidene fluoride), styrene, methyl mathacrylate, and polytetrafluoroethylene.

Then, the bank material layer (not shown) having such a photosensitive characteristic is patterned to form a dam-shaped bank 150 which overlaps the edge of the first electrode 147 with a predetermined width at the boundary of each light emitting area EA do.

Next, as shown in FIG. 9I, after the bank 150 is formed, an organic light emitting material is jetted or dropped using an ink jet apparatus or a nozzle coating apparatus, The organic light emitting layer 155 may be formed by drying the droplet organic luminescent material or may be formed by thermal evaporation of the organic luminescent material through a shadow mask having an opening corresponding to each light emitting region EA, The organic light emitting layer 155 is formed on the light emitting layer EA.

Although not shown, the organic light emitting layer 155 may have a single layer structure, or may include a hole injection layer, a hole transporting layer, an emitting material layer A hole transporting layer, an emitting material layer, and an electron transporting layer may be formed in a five-layer structure including a hole transport layer, an electron transporting layer, and an electron injection layer. a hole transporting layer, an emitting material layer and an electron transporting layer may be formed as a hole transporting layer, a hole transporting layer, an electron transporting layer, and an electron injection layer. It may be formed to have an intermediate layer structure.

 Next, as shown in FIG. 9J, a metal material having a low work function value such as aluminum (Al), an aluminum alloy (AlNd), silver (Ag), magnesium (Mg ), Gold (Au), and aluminum magnesium alloy (AlMg) are thermally deposited to form the second electrode 165.

At this time, the first electrode 147, the organic light emitting layer 155, and the second electrode 165, which are sequentially stacked on the respective light emitting regions EA, form an organic light emitting diode E.

Next, as shown in FIG. 9K, a film (not shown) may be attached to the upper portion of the second electrode 165, a capping layer (not shown) may be formed of an organic insulating layer or an inorganic insulating layer, And the second substrate 170 is bonded together to complete the organic light emitting device 101 according to the embodiment of the present invention.

<Manufacturing Method of Organic Electroluminescent Device 101 According to Second Embodiment>

FIGS. 10A to 10F are cross-sectional views illustrating a step of forming a metal pattern together with source and drain electrodes of a thin film transistor and driving the organic light emitting device according to the second embodiment of the present invention. The other components are the same as those of the organic electroluminescent device according to the first embodiment of the present invention (101 in FIG. 3 or FIG. 5). In this case, for convenience of description, a region where a switching thin film transistor (not shown) is formed in each pixel region P is referred to as a switching region (not shown), a region where a driving thin film transistor DTr is formed is referred to as a driving region DA , And a region where the organic light emitting layer 155 is provided is defined as a light emitting region (EA).

Next, as shown in FIG. 10A, a metal material layer 131 having a first thickness t1 is formed on the entire surface of the first substrate 110 on the interlayer insulating film 123 (or the semiconductor layer and the gate insulating film) A photoresist layer 180 is formed on the entire surface of the first substrate 110 by successively forming a photoresist on the metal material layer 131.

Next, an exposure mask 192 having a transmissive area TA, a blocking area BA and a transflective area HTA is placed on the photoresist layer 180, The resist layer 180 is exposed. At this time, when the photoresist layer 180 is a negative type, a portion of the source and drain electrodes (133 and 136 in FIG. 10F) and a second portion (238b in FIG. 10F) of the metal pattern The transflective region TA corresponds to the region where the first portion (238a in FIG. 10F) of the metal pattern (238a in FIG. 10F) is to be formed so as to correspond to the transmissive region TA, The exposure mask 192 is positioned so as to correspond to the blocking region BA, and the exposure proceeds.

If the photoresist layer 180 is of the positive type, the source and drain electrodes (133 and 136 in FIG. 10F) and the second portion (238b in FIG. 10F) of the metal pattern The semi-transmissive area HTA is made to correspond to the area where the first part (238a in FIG. 10F) of the metal pattern (238a in FIG. 10F) The exposure mask 192 is positioned so that the transmissive area TA corresponds to the area, and the exposure progresses. In the drawing, the negative type photoresist layer 180 is shown as an example.

Exposure using the exposure mask 192 including the transflective region HTA is referred to as diffraction exposure or halftone exposure. When the diffraction exposure or the halftone exposure is performed, the photoresist layer 180 is irradiated with the transmissive area TA, the blocking area BA, and the transflective area HTA of the exposure mask 192 When a subsequent development process is performed on the photoresist layer 180 having such a different exposure amount due to a difference in light amount, photoresist patterns having different thicknesses can be formed.

10B, a first photoresist pattern 181a having a third thickness is formed on the metal material layer 131 by performing a developing process on the exposed photoresist layer 180 (FIG. 10A) And a second photoresist pattern 181b having a fourth thickness that is thinner than the third thickness. At this time, the first photoresist pattern 181a is located at a portion where the source and drain electrodes (133 and 136 in FIG. 10F) and the second portion (238b in FIG. 10F) of the metal pattern The second photoresist pattern 181b is located at a portion where a first portion (238a in FIG. 10F) of the metal pattern (238 in FIG. 10F) is to be formed.

Next, as shown in FIG. 10C, etching is performed on the metal material layer (131 in FIG. 10B) exposed to the outside of the first and second photoresist patterns 181a and 181b, The source and drain electrodes having a first thickness t1 and spaced apart from each other and contacting the semiconductor layer 113 of the polysilicon through the semiconductor layer contact hole 125 in the switching region DA and the switching region The first portion 238a having the first thickness t1 and the metal pattern 238 of the second portion 237 having the first thickness t1 in the present state are formed in the respective light emitting regions EA, .

Then, ashing is performed to remove the second photoresist pattern (181b in FIG. 10C) having the fourth thickness, as shown in FIG. 10D, so that the first thickness t1 The first portion 237 is exposed. At this time, the thickness of the first photoresist pattern 181a becomes thin, but it still remains in correspondence with the source and drain electrodes 133 and 136 and the second portion 238b of the metal pattern 238. [

 Next, as shown in Figs. 10E and 10F, the first portion of the metal pattern 238 having the first thickness t1 exposed by removing the second photoresist pattern (181b in Fig. 10C) The second portion having the first thickness t1 according to the second embodiment of the present invention is formed by etching the second portion 237 to reduce the thickness thereof to have a second thickness t2 that is thinner than the first thickness t1. And a first portion 238a having a first thickness 238b and a second thickness t2. Thereafter, the strip is advanced to remove the first photoresist pattern 181a.

The process after forming the metal pattern 238 of the second portion 238b having the first thickness t1 and the first portion 238a having the second thickness t2 is the same as that of the organic electroluminescent device according to the first embodiment Is the same as the manufacturing process of the light emitting element (101 of FIG.

The present invention is not limited to the above-described embodiments and modifications, and various modifications may be made without departing from the spirit of the present invention.

101: organic electroluminescent device 110: first substrate
113: semiconductor layer 113a: first region
113b: second region 116: gate insulating film
120: gate electrode (of the driving thin film transistor)
123: interlayer insulating film 125: semiconductor layer contact hole
133: source electrode (of the driving thin film transistor)
136: drain electrode (of the driving thin film transistor)
138: metal pattern 138a: first part (of the metal pattern)
138b: second part (of the metal pattern)
140: first protective layer 143: drain contact hole
147: first electrode 147a: lower layer (of the first electrode)
147b: upper layer (of the first electrode) 150: bank
155: organic light emitting layer 165: second electrode
170: second substrate DTr: driving thin film transistor
DA: driving region E: organic light emitting diode
EA: light emitting region P: pixel region

Claims (11)

A substrate on which a plurality of light emitting regions are defined;
A thin film transistor provided on the substrate;
A metal pattern provided for each light emitting region in the same layer having one electrode of the thin film transistor;
A protective layer located on one electrode of the thin film transistor and on a metal pattern;
A first electrode formed on the passivation layer for each of the light emitting regions and having a convex and concave structure with a portion where the metal pattern is formed;
A bank which overlaps the edge of the first electrode and surrounds each of the plurality of light emitting regions;
An organic light emitting layer provided on the first electrode in each of the plurality of light emitting regions surrounded by the banks;
The second electrode provided on the organic light-
And an organic electroluminescent device.
The method according to claim 1,
Wherein the metal pattern has a lattice shape or a plurality of dot patterns spaced apart from each other by a predetermined distance corresponding to the inside of each light emitting region.
3. The method of claim 2,
Wherein the metal pattern has the same thickness as one electrode of the thin film transistor.
3. The method of claim 2,
Wherein the metal pattern includes a first portion in a lattice shape or a plurality of dot patterns spaced apart from each other by a predetermined distance corresponding to the inside of each light emitting region and a second portion surrounding each of the light emitting regions, Wherein the second portion is exposed outside the bank.
5. The method of claim 4,
Wherein the second portion of the metal pattern has a first thickness equal to that of the source and drain electrodes and the first portion has a second thickness that is less than the first thickness.
6. The method of claim 5,
Wherein the first thickness is 1000 to 3000 ANGSTROM and the second thickness is 20 to 900 ANGSTROM.
The method according to claim 1,
Wherein one electrode of the thin film transistor is an electrode provided at the top of the laminated structure of the thin film transistor.
Forming a metal pattern corresponding to each of the plurality of light emitting regions on a substrate on which a plurality of light emitting regions are defined, spaced apart from one electrode of the thin film transistor and one electrode of the thin film transistor;
Forming a protective layer on the electrode and the metal pattern;
Forming a first electrode on the protective layer, the first electrode having a convex-concave structure on a portion of the light emitting region where the metal pattern is formed;
Forming a bank that overlaps the edge of the first electrode and surrounds each of the plurality of light emitting regions;
Forming an organic light emitting layer on the first electrode in each of the plurality of light emitting regions surrounded by the banks;
Forming a second electrode on the organic light emitting layer
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
9. The method of claim 8,
Wherein one electrode of the thin film transistor and the metal pattern are formed to have the same thickness.
9. The method of claim 8,
Wherein the metal pattern includes a first portion in a lattice shape or a plurality of dot patterns spaced apart from each other by a predetermined distance corresponding to the inside of each light emitting region and a second portion surrounding each of the light emitting regions, Is formed to have a second portion that is exposed to the outside of the bank.
11. The method of claim 10,
The step of forming a metal pattern corresponding to each of the plurality of light emitting regions on a substrate having a plurality of light emitting regions separated from one electrode of the thin film transistor and one electrode of the thin film transistor,
A metal material layer having a first thickness is formed on the insulating layer, and a patterning process including diffraction exposure or halftone exposure is performed on the metal material layer, so that one electrode and the second portion of the thin film transistor have the first thickness And the second portion has a second thickness that is thinner than the first thickness.

Images