KR20160053755A - Heater for chemical vapor deposition and chemical vapor deposition apparatus using the same - Google Patents

Heater for chemical vapor deposition and chemical vapor deposition apparatus using the same Download PDF

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Publication number
KR20160053755A
KR20160053755A KR1020150077806A KR20150077806A KR20160053755A KR 20160053755 A KR20160053755 A KR 20160053755A KR 1020150077806 A KR1020150077806 A KR 1020150077806A KR 20150077806 A KR20150077806 A KR 20150077806A KR 20160053755 A KR20160053755 A KR 20160053755A
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KR
South Korea
Prior art keywords
heater
wafer
heater housing
vapor deposition
chemical vapor
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Application number
KR1020150077806A
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Korean (ko)
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KR101707103B1 (en
Inventor
오충석
김종훈
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(주)에스아이
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Publication of KR20160053755A publication Critical patent/KR20160053755A/en
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Publication of KR101707103B1 publication Critical patent/KR101707103B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

The present invention relates to a heater for chemical vapor deposition and a chemical vapor deposition apparatus using the same. The chemical vapor deposition apparatus comprises: a chamber having a plurality of reaction chambers stacked in a vertical direction; a heater for chemical vapor deposition, provided in a lower part of each reaction chamber; a wafer rotating apparatus provided in an upper part of each heater for chemical vapor deposition, and rotating a wafer; and a gas spray nozzle included on a side part of each wafer rotating apparatus so as to supply reaction gas to each reaction chamber. The heater for chemical vapor deposition includes a heater housing prepared in a lower part of the wafer; heating wires prepared in an interior space of the heater housing; a fire proofing wall interposed between the heater housing and the heating wires, and surrounding at least one side of the heating wires; and an adiabatic wall interposed between the heater housing and the fire proofing wall, and surrounding at least one side of the fire proofing wall. A vertical thickness of the heater housing can be formed to be equal to or less than a predetermined value. Accordingly, a temperature ramping rate can accelerate, a stacked structure is possible, so productivity per area of the same facilities can be more improved.

Description

TECHNICAL FIELD [0001] The present invention relates to a chemical vapor deposition (CVD) heater, and a chemical vapor deposition apparatus using the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition heater and a chemical vapor deposition apparatus using the same. More particularly, the present invention relates to a chemical vapor deposition apparatus using a metal organic precursor to deposit metal and metal chemicals on a wafer And a chemical vapor deposition apparatus using the same.

Generally, a method of depositing a thin film is divided into a physical vapor deposition (PVD) using a physical collision and a chemical vapor deposition (CVD) using a chemical reaction.

PVD includes sputtering, and the CVD includes thermal CVD using heat and plasma enhanced CVD (PECVD) using plasma.

On the other hand, a metal thin film used as a wiring of a semiconductor device or a flat panel display device is mainly deposited by sputtering. In sputtering and PVD, step coverage is low, so that a thin film may be disconnected at a step portion. Recently, as the design rule (critical dimension) is rapidly reduced, a thin film of a fine pattern is required and a step of a region where a thin film is formed is greatly increased, so that it is difficult to satisfy such a design rule by a conventional sputtering method.

For this reason, metal organic chemical vapor deposition (MOCVD) has recently been used for depositing metal and metal compounds by a CVD method using an organic metal precursor.

The temperature condition must be satisfied so that the nitride film can be smoothly grown on the wafer by vapor deposition.

In the chemical vapor deposition apparatus used in chemical vapor deposition, a hot wall type or cold wall type RF heater is used as a heater for heating the wafer to a reaction temperature condition.

However, the conventional chemical vapor deposition apparatus using a hot wall type or a cold wall type RF heater has a problem in that the productivity is lowered. More specifically, the conventional hot wall type furnace has a problem that it takes a considerable time to heat the wall to a predetermined temperature, and it takes a considerable time to cool the furnace after the completion of the process. That is, the temperature ramping rate is too slow. As a result, the productivity is lowered. On the other hand, in the conventional cold wall type RF heater, although the temperature ramping rate is fast, the heating structure is complicated, and in order to prevent the breakdown of the chamber of the heater or the chemical vapor deposition apparatus due to thermal shock, There is a problem that the thickness must be formed to be considerably thick. As a result, a plurality of RF heaters can not be laminated, so that they can be produced only in a single-layer structure, and the productivity is lowered.

Accordingly, it is an object of the present invention to provide a chemical vapor deposition heater capable of improving productivity and a chemical vapor deposition apparatus using the same.

In order to achieve the above object, the present invention provides a chemical vapor deposition apparatus for forming a thin film on a wafer, comprising: a heater housing provided below the wafer; A heating wire provided in an inner space of the heater housing; A refractory wall interposed between the heater housing and the heat line and surrounding at least one side of the heat line; And a heat insulating wall interposed between the heater housing and the refractory wall and surrounding at least one side of the refractory wall, wherein the thickness of the heater housing in a vertical direction is set to a predetermined value or less, to provide.

The heater housing is seated on the bottom surface of the reaction chamber where the wafer is disposed, and the thickness of the heater housing in the up-and-down direction may be less than half the vertical height of the reaction chamber.

The thickness of the heater housing in the up and down direction may be 50 mm or less.

A spacing member may be formed between the hot wire and the refractory wall to separate the hot wire and the refractory wall from each other.

The refractory wall may be formed of a ceramic material, the heat insulating wall may be formed of a fumed silica material, and the heater housing may be formed of a corrosion resistant material.

The heater housing is seated on the bottom surface of the reaction chamber where the wafer is disposed, and a cooling passage may be formed on the bottom surface of the reaction chamber.

The heater housing may be provided with a gas port for introducing an inert gas into the heater housing.

The hot wire may be formed of a metal or a non-metal material.

The hot wire includes: a first hot wire portion for heating a region facing the wafer; And a second hot wire portion for heating an area not facing the wafer, wherein the first hot wire portion is heated to a higher temperature than the second hot wire portion.

Further, the present invention provides a chamber comprising: a chamber having a plurality of reaction chambers stacked in a vertical direction; A heater provided at the bottom of each reaction chamber; A wafer rotating device provided on each of the heaters for rotating the wafer; And a gas injection nozzle provided at a side of each wafer rotating device to supply a reaction gas to each reaction chamber, wherein the heater can be formed of the chemical vapor deposition heater.

The heater may be formed of a hot wire heater or an RF heater, and the temperature raising rate may be 50 ° C or higher per minute and the cooling rate may be 30 ° C or higher per minute.

A chemical vapor deposition apparatus and a chemical vapor deposition apparatus using the same according to the present invention are characterized in that a plurality of reaction chambers are stacked in a vertical direction and independently controlled at the bottom of each reaction chamber, The thickness of the heater (heater housing) in the up-and-down direction may be less than a predetermined value by providing a heat wire inside the heater housing, a refractory wall surrounding the heat wire, and a heat insulating wall surrounding the refractory wall. have. Thus, the temperature ramping rate is increased and the lamination structure is possible, so that productivity per unit area can be improved. In addition, the temperature of each wafer can be maintained at an equivalent level.

1 is a perspective view showing a chemical vapor deposition apparatus according to an embodiment of the present invention,
FIG. 2 is a top view of the reaction chamber of FIG. 1,
Fig. 3 is a perspective view showing the heater of Fig. 1,
4 is a sectional view taken along the line I-I in Fig. 3,
5 is a sectional view taken along the line II-II in Fig.

Hereinafter, a chemical vapor deposition heater according to the present invention and a chemical vapor deposition apparatus using the same will be described in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view illustrating a chemical vapor deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a top plan view of the reaction chamber of FIG. 1.

1 and 2, a chemical vapor deposition apparatus according to an embodiment of the present invention includes a chamber 1 having a plurality of reaction chambers S stacked in a vertical direction, A wafer rotating device 3 provided at an upper portion of each heater 2 for rotating the wafer W and a reaction chamber S for supplying a reaction gas to the respective reaction chambers S, And a gas injection nozzle 4 provided at the side of the nozzle 3.

The chamber 1 may include an outer wall 11 forming an outer shape and a laminated partition plate 12 defining a plurality of reaction chambers S by partitioning an inner space of the outer wall 11. [

The outer wall 11 may include a base wall 111 seated on the ground surface, a side wall 112 erected from the outer periphery of the base wall 111 and a top wall 113 covering the top side of the side wall 112 have.

The side wall 112 may be formed so that one side thereof can be opened and closed so that the wafer W can be carried in and out.

A plurality of the laminated partition plates 12 may be provided, and the plurality of laminated partition plates 12 may be arranged in the vertical direction. In addition, a cooling passage (not shown) is formed inside the laminated partition plate 12 and the cooling fluid flows constantly, so that the cooling effect can be further improved.

Meanwhile, the chamber may be formed to be sealed so that the pressure of the reaction chamber is maintained in a range of normal pressure to vacuum.

In addition, the chamber may be formed of SUS material to enhance the safety in chemical vapor deposition.

FIG. 3 is a perspective view showing the heater of FIG. 1, FIG. 4 is a sectional view taken along a line I-I of FIG. 3, and FIG. 5 is a sectional view taken along a line II-II of FIG.

3 to 5, the heater 2 is formed of a material having high corrosion resistance (for example, quartz, ceramic, silicon carbide-coated graphite or the like) to prevent corrosion of the reaction gas A heater housing 21 and a tungsten heater, a rhenium heater, or an RF heater, which are provided in the inner space of the heater housing 21 and include a heat ray 22 generated by receiving power.

The heater housing 21 includes a base plate 211 (hereinafter, referred to as a heater housing base plate) 211 that is seated on the upper surface of the laminated partition plate 12, a side plate (hereinafter referred to as a heater housing side plate ) 212 and an upper plate (hereinafter, referred to as a heater housing upper plate) 213 covering the upper portion of the heater housing side plate 212. That is, the heater housing 21 may be formed in a rectangular box type to facilitate stacking.

An opening 2131 may be formed in the heater housing upper plate 213 so that the wafer rotating apparatus 3 penetrates the upper plate of the heater housing 21 and is supported by a fireproof wall 23 to be described later.

The heater housing side plate 212 is provided with a power port 2121 for supplying power to the heating wire 22 and a gas for supplying an inert gas (for example, nitrogen gas) to the inner space of the heater housing 21 A port 2122 may be formed. Here, the inert gas supplied to the gas port 2122 may block the introduction of the reaction gas into the heater 2, and increase the cooling rate of the heater 2 after the process.

The heat ray 22 may be formed of a material (e.g., rhenium, tungsten, or RF coil) that generates heat upon receiving power.

The hot wire 22 may be wound in a spiral shape from the reference point corresponding to the center of the opening 2131, or may be wound in a symmetrical shape.

The heating wire 22 may include a first heating wire portion for heating a region facing the wafer W and a second heating wire portion for heating a region not opposed to the wafer W. [ Here, the wafer W is rotated by the wafer rotating device 3, and the locus of the wafer W can be formed in an annular shape centered on the reference point of the heat ray 22, And the second hot wire portion may be a portion of the hot wire 22 that is not opposed to the locus of the wafer W. The second hot wire portion may be a portion of the hot wire 22 opposed to the locus of the wafer W,

The heating wire 22 is heated to a temperature higher than the temperature of the second heating wire so as to efficiently heat the wafer W in accordance with the growth temperature condition, And may be formed to be heated to a temperature.

The heat line 22 is formed by a spacing member 27 interposed between the heat ray 22 and a refractory wall 23 to be described later so as to reduce the thermal shock applied to the refractory wall 23 (Not shown).

The heater 2 has a refractory wall 23 for enclosing the heat ray 22 inside the heater housing 21 and a refractory wall 23 for enclosing the heat ray 22 in order to reduce the thickness of the heater 2 in the vertical direction And a heat insulating wall 24 surrounding the heat insulating wall 24. At this time, the refractory wall 23 is formed of a ceramic material, and the heat insulating wall 24 may be formed of a fumed silica material.

Here, when the thickness of the heater 2 in the up-and-down direction is reduced, the heater housing 21 and the chamber 1 may be damaged due to the thermal shock caused by the hot wire 22. However, in the case of this embodiment, the refractory wall 23 made of a ceramic material and the heat insulating wall 24 made of a fumed silica material are provided so that the thermal shock is reduced, and the heater housing 21 and the chamber 1 The thickness of the heater 2 in the up-and-down direction can be reduced. The heater 2 is provided with a cooling water channel (not shown) inside the chamber 1 (more precisely, the laminated partition plate 12) so that the thickness of the heater 2 in the vertical direction is made thinner . That is, since the cooling water channel (not shown) relaxes the thermal shock, even if a relatively large thermal shock is applied, the heater 2 and the chamber 1 may not be damaged. In other words, even if the thickness of the heater 2 is formed to be thinner than the thickness of the refractory wall 23 of the ceramic material and the heat insulating wall 24 of the fumed silica material, the heater housing 21 And the chamber 1 may not be damaged. With this configuration, the heater 2 can be formed such that the thickness of the heater 2 in the up-and-down direction is less than about half of the height in the vertical direction of the reaction chamber S. In this embodiment, the thickness of the heater 2 may be 50 mm or less.

The refractory wall 23 includes a base plate 231 located below the heat ray 22 and a side plate 234 rising from the outer periphery of the refractory wall base plate 231 232). That is, in the refractory wall 23, the lower portion of the heat ray 22 is surrounded by the refractory wall base plate 231, the side portion of the heat ray 22 is surrounded by the refractory wall side plate 232, And the upper part of the heat line 22 may be formed to be opened.

The heat insulating wall 24 includes a base plate (hereinafter referred to as a heat insulating wall base plate) 241 seated on the heater housing base plate 211 and a side plate (hereinafter referred to as an insulating wall side plate) 242). That is, in the heat insulating wall 24, the refractory wall base plate 231 is surrounded by the heat insulating wall base plate 241, the refractory wall side plate 232 is surrounded by the heat insulating wall side plate 242, And the upper part of the heat line 22 may be formed to be opened.

The refractory wall side plate 232 is provided on the refractory wall side plate 232 so that the wafer rotating apparatus 3 is supported so as to overlap with the heat insulating wall side plate 242 in the radial direction of the wafer rotating apparatus 3, The front end face 2321 of the heat insulating wall side plate 242 may be stepped with the front end face 2421 of the heat insulating wall side plate 242.

The heater 2 may be independently controlled in each reaction chamber S so that the temperatures of the wafers W in the reaction chambers S are maintained at the same level.

The wafer rotating device 3 is mounted on the upper surface of the heater 2 (more precisely, through the opening 2131 of the heater housing 21 to form the front end face 2321 of the refractory wall side plate 232) A susceptor 32 provided on the base 31 and a wafer seating member 33 provided on the susceptor 32 and on which the wafer W is mounted, . ≪ / RTI > Here, the susceptor 32 is rotated with respect to the base 31, and the wafer seating member 33 can be rotated by the susceptor 32. Thus, the wafer W can revolve with respect to the center of the susceptor 32 while rotating about the center of the wafer seating member 33.

The gas injection nozzle 4 can uniformly supply the reaction gas into the reaction chamber S through a gas injection header 42 having a plurality of injection holes (not shown). The reaction gas may be, for example, GaCl gas and NH3 gas.

Hereinafter, the operation and effect of the chemical vapor deposition apparatus according to the present embodiment will be described.

That is, in the chemical vapor deposition apparatus according to the present embodiment, the wafer W is heated by the heater 2, and the reaction gas is sprayed onto the wafer W by the gas injection nozzle 4 , The wafer W can be rotated (rotated) by the wafer rotating device 3 to deposit (grow) a thin film on the upper surface of the wafer W.

Here, a plurality of reaction chambers S are provided, and a plurality of the wafers W are provided for each reaction chamber S, so that the productivity can be increased.

The heater 2 is formed of a cold wall type heater (a hot wire heater (the hot wire material may vary depending on the use environment such as tungsten, molybdenum, or carbon) or an RF heater) and is provided at the bottom of each reaction chamber S. , The temperature ramping rate can be accelerated. That is, the time required for heating to a predetermined temperature for the process and the time required for cooling after completion of the process can be significantly reduced. In the case of this embodiment, the heating rate may be 50 deg. C or higher per minute and the cooling rate may be 30 deg. C or higher per minute.

The plurality of reaction chambers S are stacked in the vertical direction. Since the thickness of the heater 2 is thin, space utilization can be improved. That is, the entire vertical height of the chemical vapor deposition apparatus can be reduced on the basis of the same production amount. Alternatively, more reaction chambers S can be stacked on the basis of the same height, so that the production amount can be further increased.

1: chamber 2: heater
3: Wafer rotation device 4: Gas injection nozzle
21: heater housing 22: hot wire
23: fireproof wall 24: insulating wall
27: spacing member 2122: gas port
S: Reaction chamber

Claims (11)

1. A chemical vapor deposition apparatus for forming a thin film on a wafer, comprising: a heater housing provided below the wafer;
A heating wire provided in an inner space of the heater housing;
A refractory wall interposed between the heater housing and the heat line and surrounding at least one side of the heat line; And
And a heat insulating wall interposed between the heater housing and the refractory wall and surrounding at least one side of the refractory wall,
Wherein a thickness of the heater housing in a vertical direction is formed to be a predetermined value or less. The method according to claim 1,
The heater housing is seated on the bottom surface of the reaction chamber where the wafer is provided,
Wherein a thickness of the heater housing in a vertical direction is less than a half of a height of the reaction chamber in a vertical direction. 3. The method of claim 2,
Wherein a thickness of the heater housing in a vertical direction is 50 mm or less. The method according to claim 1,
And a spacing member is formed between the heat line and the refractory wall to separate the heat line and the refractory wall from each other. The method according to claim 1,
The refractory wall is formed of a ceramic material,
The heat insulating wall is formed of a fumed silica material,
Wherein the heater housing is formed of a corrosion-resistant material. The method according to claim 1,
The heater housing is seated on the bottom surface of the reaction chamber where the wafer is provided,
And a cooling channel is formed on the bottom surface of the reaction chamber. The method according to claim 1,
Wherein the heater housing is provided with a gas port for introducing an inert gas into the heater housing. The method according to claim 1,
Wherein the heating wire is formed of a metal or a non-metal material. The method according to claim 1,
The heating wire,
A first heating wire portion for heating a region facing the wafer; And
And a second heating wire portion for heating an area not opposed to the wafer,
And the first heat conducting portion is formed to be heated to a temperature higher than that of the second heat conducting portion. A chamber having a plurality of reaction chambers stacked in a vertical direction;
A heater provided at the bottom of each reaction chamber;
A wafer rotating device provided on each of the heaters for rotating the wafer; And
And a gas injection nozzle provided at a side of each wafer rotating device to supply a reaction gas to each reaction chamber,
Wherein the heater is formed of the chemical vapor deposition heater according to any one of claims 1 to 9. 11. The method of claim 10,
The heater
Formed by a hot wire heater or an RF heater,
Wherein the rate of temperature increase is 50 DEG C or more per minute and the rate of cooling is 30 DEG C or more per minute.
KR1020150077806A 2014-11-05 2015-06-02 Heater for chemical vapor deposition and chemical vapor deposition apparatus using the same KR101707103B1 (en)

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Application Number Priority Date Filing Date Title
KR20140152801 2014-11-05
KR1020140152801 2014-11-05

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KR101707103B1 KR101707103B1 (en) 2017-02-27

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180079592A (en) * 2016-12-30 2018-07-11 세메스 주식회사 Apparatus for supporting substrate, System for treating substrate, and Method for treating substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002190372A (en) * 2000-12-20 2002-07-05 Ibiden Co Ltd Hot plate unit
KR101136892B1 (en) * 2011-07-15 2012-04-20 주식회사 비아트론 Ceramic plate heater for semiconductor and display device manufacturing process
KR20130128612A (en) * 2012-05-17 2013-11-27 (주)엠에스아이코리아 Ceramic heater using insulating tube
KR20140005819A (en) * 2012-07-06 2014-01-15 도쿄엘렉트론가부시키가이샤 Film forming apparatus and film forming method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002190372A (en) * 2000-12-20 2002-07-05 Ibiden Co Ltd Hot plate unit
KR101136892B1 (en) * 2011-07-15 2012-04-20 주식회사 비아트론 Ceramic plate heater for semiconductor and display device manufacturing process
KR20130128612A (en) * 2012-05-17 2013-11-27 (주)엠에스아이코리아 Ceramic heater using insulating tube
KR20140005819A (en) * 2012-07-06 2014-01-15 도쿄엘렉트론가부시키가이샤 Film forming apparatus and film forming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180079592A (en) * 2016-12-30 2018-07-11 세메스 주식회사 Apparatus for supporting substrate, System for treating substrate, and Method for treating substrate

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