KR20160047287A - Multichannel Wavelength Tunable External Cavity Laser - Google Patents

Multichannel Wavelength Tunable External Cavity Laser Download PDF

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Publication number
KR20160047287A
KR20160047287A KR1020140143534A KR20140143534A KR20160047287A KR 20160047287 A KR20160047287 A KR 20160047287A KR 1020140143534 A KR1020140143534 A KR 1020140143534A KR 20140143534 A KR20140143534 A KR 20140143534A KR 20160047287 A KR20160047287 A KR 20160047287A
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KR
South Korea
Prior art keywords
band
wavelength
optical waveguide
semiconductor gain
tunable laser
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Application number
KR1020140143534A
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Korean (ko)
Inventor
이학규
박준오
서준규
박수현
이형종
안진형
Original Assignee
(주)켐옵틱스
주식회사 쏠리드시스템스
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Priority to KR1020140143534A priority Critical patent/KR20160047287A/en
Publication of KR20160047287A publication Critical patent/KR20160047287A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08086—Multiple-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
    • H01S3/10015—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by monitoring or controlling, e.g. attenuating, the input signal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention relates to a multichannel wavelength tunable external cavity laser, and more specifically, to a multichannel wavelength tunable external cavity laser in which a wavelength tunable external cavity laser is capable of simultaneously outputting various wavelengths, and moreover, capable of tuning the wavelengths. The multichannel wavelength tunable external cavity laser includes: a semiconductor gain chip; an optical waveguide; a Bragg grating; a thin film heater for tuning wavelengths; and a temperature control unit.

Description

Multichannel Wavelength Tunable External Cavity Laser [0002]

The present invention relates to a multichannel external resonance type tunable laser, and more particularly, to a multichannel external resonance type tunable laser capable of simultaneously outputting various wavelengths, To a wavelength tunable laser.

Wavelength Division Multiplexing (WDM) optical communication technology is applied to most backbone networks and metro networks, and is a technology for transmitting a plurality of high-speed signals through wavelength division multiplexing to an optical line composed of one optical fiber.

In addition, efforts have been made to reduce the inventory burden and the operating cost while increasing the flexibility of the transmission network by using a tunable laser for the wavelength division multiplexing transmission network described above.

In the tunable laser, a laser utilizing a DFB (Distributed Feed Back) structure has been developed and utilized. However, since the wavelength tunable range of the DFB laser is as small as 10 nm or less, all wavelengths within the C- band (1535 nm to 1565 nm) There is a disadvantage of using 3-4 sets of tunable DFB laser modules.

In addition, since the tunable transponder using the DFB laser requires a multichannel transponder for backup because the light source is expensive, it does not provide an efficient solution for reducing the inventory burden on the network operator.

Therefore, an external resonator-type wavelength variable using a tunable filter that provides a wide-band tunable function that can change all the wavelengths of a required WDM band (for example, C-band, L-band, and S-band) It is necessary to develop a light source.

However, the wavelength tunable laser module has not been developed so far.

This is not only very difficult to make wavelength tunable reflectors varying from 40 nm to 100 nm, but also can be problematic in the case of semiconductor gain chips used in the above wavelength range.

FIG. 1 shows a configuration diagram of an external resonator type tunable laser in which a conventional laser diode chip and an optical waveguide are directly butt-coupled. As shown in FIG. 1, in the case of an external resonator type laser, light emitted from the laser diode chip 1 for a broadband light source is composed of an optical waveguide 2 including a polymer Bragg grating. In such a tunable laser, the degree of the variable wavelength is limited by the bandwidth and flatness of the semiconductor gain chip and the tunable bandwidth of the Bragg grating, which is a variable wavelength reflector. So far, there is a problem that the maximum is about 32 nm or 40 nm.

On the other hand, Korean Patent No. 10-1038264 ("external resonance type tunable laser module ", 2011.06.01.) Discloses a wavelength tunable laser diode having an extremely high stability and reproducibility of oscillation wavelength under wavelength tuning and excellent thermal, optical, mechanical stability and durability. A resonant wavelength tunable laser module is disclosed.

Korean Patent No. 10-1038264 ("Outer Resonant Tunable Laser Module ", 2011.06.01.)

SUMMARY OF THE INVENTION The present invention has been conceived to solve the problems as described above, and it is an object of the present invention to provide a wavelength tunable laser diode capable of increasing a wavelength tunable bandwidth of a single laser resonator by a selected unit, Channel external resonant wavelength capable of providing a 120 nm tunable laser that can provide an 80 nm variable retarder capable of changing the wavelength of a band (1571 nm to 1611 nm) as well as an S-band (1471 to 1530 nm) Thereby providing a variable laser.

A multi-channel external resonance tunable laser according to the present invention includes a semiconductor gain chip formed on a substrate to generate a broadband light, the number of which is equal to a selected number of wavelengths to be generated; An optical waveguide formed on the substrate so as to be spaced apart from the semiconductor gain chip by a predetermined distance and formed to be optically coupled with the semiconductor gain chip; A Bragg grating formed on the optical waveguide; A wavelength-shifting thin film heater provided on the optical waveguide for adjusting a reflection band of the Bragg grating by a thermo-optic effect; And a temperature controller including a temperature sensor and a thermoelectric cooler.

In particular, the multichannel external resonance type tunable laser further includes a selection switch for selecting a wavelength band to be selected.

The selection switch is characterized by selecting a wavelength band as a total reflection phenomenon using a thermo-optic effect.

The multichannel external resonant wavelength tunable laser according to the present invention can be realized by combining a semiconductor gain chip and an optical waveguide by butt coupling and using a polymer Bragg grating filter having a high thermooptic coefficient, It has the advantage of generating all the wavelengths in the band.

In particular, the multichannel external resonant wavelength tunable laser according to the present invention can broaden the bandwidth and improve the size and efficiency of the entire laser by using a plurality of tunable lasers having different wavelength bands in one bundle on the planar waveguide There is an advantage to be able to do.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing a conventional external resonance type tunable laser. Fig.
2 is a view showing a multi-channel external resonance type tunable laser according to the present invention.
FIG. 3 is another diagram showing a multi-channel external resonance type tunable laser according to the present invention. FIG.
4 is a view showing an embodiment of a multi-channel external resonance type tunable laser according to the present invention.

Hereinafter, a multichannel external resonance tunable laser according to the present invention will be described in detail with reference to the accompanying drawings.

Prior to this, terms and words used in the present specification and claims should not be construed in a conventional or dictionary sense, and the inventor should appropriately define the concept of the term to describe its invention in the best possible way The present invention should be construed in accordance with the spirit and concept of the present invention.

Therefore, the embodiments described in the present specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention, and not all of the technical ideas of the present invention are described. Therefore, It is to be understood that equivalents and modifications are possible.

FIG. 2 is a view showing a multichannel external resonance type tunable laser according to the present invention. FIG. 3 is a schematic view of a multichannel external resonance type tunable laser according to the present invention. 4 is a view showing an embodiment of a multichannel external resonance type tunable laser according to the present invention.

2 to 3, a multichannel external resonant tunable laser 1000 according to the present invention includes a semiconductor gain chip 100, an optical waveguide 200, a bragg grating 300, And a wavelength tuning thin film heater 400 and a temperature control unit 500.

The semiconductor gain chip 100 is formed on the substrate 10 to generate broadband light, and is formed by the number of selected wavelengths to be generated.

At this time, the substrate 10 is formed for physical support, and the substrate can be made of various materials such as a silicon substrate, a polymer plate, or a glass plate.

The optical waveguide 200 is a path through which the light output from the semiconductor gain chip 100 is condensed and inputted, and may include an upper clad for inducing total reflection, a lower clad, and a core for transmitting light .

The optical waveguide 200 is formed on the substrate 10 at a certain distance from the semiconductor gain chip 100 and is optically coupled to the semiconductor gain chip 100 in correspondence with the semiconductor gain chip 100.

That is, if the number of wavelengths to be generated by the semiconductor gain chip 100 is three, the optical waveguide 200 is also formed in three corresponding to the semiconductor gain chip 200.

At this time, it is recommended that the semiconductor gain chip 100 and the optical waveguide 200 are coupled by butt coupling. By combining the semiconductor gain chip 100 and the optical waveguide 200 by means of butt coupling, the length of the resonator can be minimized, And the like.

The Bragg grating 300 is formed on the optical waveguide 200 and changes the wavelength of light input to the optical waveguide 200 according to changes in external conditions including temperature and intensity.

In this case, the multichannel external resonant tunable laser 1000 according to the present invention may be not only the optical waveguide 200 but also the polymer Bragg grating formed of the polymer material.

The polymer forming the optical waveguide 200 and the Bragg grating 300 includes a halogen element and may include a functional group protected by ultraviolet rays or heat.

The wavelength tuning thin film heater 400 is formed on the optical waveguide 200 having the Bragg grating 300 and the wavelength tuning thin film heater 400 is formed on the reflection surface of the Bragg grating 300 The band can be adjusted.

In this case, since the wavelength-shifting thin film heater 400 is also formed on each optical waveguide 200, it is formed in the same number corresponding to the number of semiconductor gain chips 100 formed.

The temperature controller 500 includes a temperature sensor 510 and a thermoelectric cooler 520. The temperature controller 510 controls the temperature of the Bragg grating 300 based on the temperature measured through the temperature sensor 510, Can be adjusted.

At this time, it is recommended that the temperature sensor 510 be provided on the optical waveguide 200 to measure the temperature of the optical waveguide 200 in real time and adjust the current applied to the wavelength-shifting thin film heater 400 do.

In addition, the thermoelectric cooler 520 controls the amount of heat for the power applied to the thin film heater 400 independently of the external environmental temperature to provide a precise thermo-optical effect. The thermoelectric cooler 520 is disposed below the optical waveguide 200 Is recommended.

However, it is needless to say that the present invention is not limited to the above-described positions, as various embodiments are possible other than the above-described positions.

4, an embodiment of a multichannel external resonance tunable laser 1000 according to the present invention will be described.

The multichannel external resonant tunable laser 1000 according to the present invention includes a S-band tunable laser, a C-band tunable laser, and an L-band tunable laser, Variable wavelength is possible.

4, the semiconductor gain chip 100 includes an S-band semiconductor gain chip 110, a C-band semiconductor gain chip 120, and an L-band semiconductor gain chip 130, Band semiconductor gain chip 110, the C-band semiconductor gain chip 120, and the L-band semiconductor gain chip 130. The S- A waveguide 210, a C-band optical waveguide 220, and an L-band optical waveguide 230.

Of course, on the S-band optical waveguide 210, the C-band optical waveguide 220, and the L-band optical waveguide 230, there are provided an S-band Bragg grating, a C- Band wavelength tunable thin film heater 410, and an S-band wavelength tunable thin film heater are formed on the S-band optical waveguide 210, the C-band optical waveguide 220 and the L-band optical waveguide 230, The C-band wavelength tunable thin film heater 420 and the L-band tunable thin film heater 430 are formed.

That is, the multichannel external resonant tunable laser 1000 according to the present invention can provide a tunable laser of 80 nm which can change the wavelength of C-band (1531 nm to 1570 nm) and L-band (1571 nm to 1611 nm) However, there is an advantage in that it is possible to provide a 120-nm tunable laser that extends to S-band (1471 ~ 1530 nm).

That is, the conventional single tunable laser can change the wavelength to about 40 nm, whereas the multichannel external resonance tunable laser 1000 according to the present invention can provide a 120 nm tunable laser.

In addition, by using a plurality of tunable lasers having different wavelength bands as one on a planar waveguide, the bandwidth can be widened and the size and efficiency of the entire lasers can be enhanced.

The multichannel external resonant tunable laser 1000 according to the present invention further includes a selection switch (not shown) capable of selecting a wavelength band of S-band, C-band, and L-band.

In addition, since the Bragg grating 300, the optical waveguide 200, and the selection switch formed in accordance with the selected wavelength band can be manufactured at once, the process can be more easily performed than the laser using the conventional single Bragg grating 300 Or because the configuration is not complicated, there is no cause of cost increase and the whole manufacturing cost is not increased.

At this time, the selection switch is characterized by selecting a wavelength band as a total reflection phenomenon using a thermo-optic effect.

That is, the selection switch selects the wavelength band as the total reflection phenomenon by using the thermo-optic effect rather than the selection by the mechanical movement, so that the selection switch has a high reliability compared to the mechanical movement.

It is needless to say that the position of the selection switch is not limited, and various embodiments are possible.

1000: multichannel external resonance type tunable laser
100: Semiconductor gain chip
200: optical waveguide
300: Bragg grating
400: Thin film heater for changing wavelength
500:
510: Temperature sensor
520: thermoelectric cooler
10: substrate
110: Semiconductor gain chip for S-band
120: Semiconductor gain chip for C-band
130: Semiconductor gain chip for L-band
210: Optical waveguide for S-band
220: Optical waveguide for C-band
230: Optical waveguide for L-band
410: Thin film heater for S-band wavelength conversion
420: Thin film heater for wavelength conversion for C-band
430: Thin film heater for wavelength conversion for L-band

Claims (3)

A semiconductor gain chip (100) formed on the substrate (10) to form a number of selected wavelengths to generate and generate a broadband light;
An optical waveguide (200) formed on the substrate (10) at a distance from the semiconductor gain chip (100) and formed to be optically coupled with the semiconductor gain chip (100);
A Bragg grating 300 formed on the optical waveguide 200;
A wavelength-shifting thin film heater 400 provided on the optical waveguide 200 for adjusting a reflection band of the Bragg grating 300 by a thermo-optic effect;
And a temperature controller (500) including a temperature sensor (510) and a thermoelectric cooler (520).
The method according to claim 1,
The multi-channel external resonance type tunable laser 1000 includes:
Further comprising a selection switch (not shown) for selecting a wavelength band to be selected.
3. The method of claim 2,
Wherein the selection switch selects a wavelength band as a total reflection phenomenon using a thermo-optic effect.
KR1020140143534A 2014-10-22 2014-10-22 Multichannel Wavelength Tunable External Cavity Laser KR20160047287A (en)

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Application Number Priority Date Filing Date Title
KR1020140143534A KR20160047287A (en) 2014-10-22 2014-10-22 Multichannel Wavelength Tunable External Cavity Laser

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