KR20160046884A - Adhesive tape for semiconductor processing - Google Patents

Abstract

Even when the cleaning liquid for cleaning the adhesive residue bonded to the semiconductor wafer by the support member is in contact with the pressure-sensitive adhesive in the process of manufacturing the semiconductor element using the support member, there is no case where the pressure- Provided is a pressure-sensitive adhesive tape for semiconductor processing which has solid adhesion required for physical and mechanical peeling of a support member. The pressure-sensitive adhesive tape for semiconductor processing according to the present invention is a pressure-sensitive adhesive tape for semiconductor processing, in which a radiation-curable pressure-sensitive adhesive layer is formed on at least one surface of a base resin film. The pressure-sensitive adhesive layer has a gel fraction of 65% Further, the peak value of the probe tack test before the ultraviolet irradiation of the pressure-sensitive adhesive layer is 100 to 600 kPa.

Description

ADHESIVE TAPE FOR SEMICONDUCTOR PROCESSING [0002]

The present invention relates to a pressure-sensitive adhesive tape for semiconductor processing used for dicing a semiconductor wafer in a process of manufacturing a semiconductor device. More particularly, the present invention relates to a pressure-sensitive adhesive tape for semiconductor processing used for manufacturing a semiconductor device using a support member.

In order to protect the pattern surface of the semiconductor wafer and fix the semiconductor wafer itself, a protective sheet is attached to the pattern surface, and then the back surface of the semiconductor wafer on which the wiring pattern is formed is polished and ground It is common to perform thinning processing. As such a protective sheet, it is generally used that an acrylic pressure-sensitive adhesive or the like is coated on a substrate including a plastic film. In recent years, however, the thickness of the semiconductor chip has been required to be 50 占 퐉 or less due to the thinning and miniaturization of the IC card and the portable telephone. In the conventional process using the protective tape, It is difficult to handle semiconductor wafers due to warping of semiconductor wafers after grinding and warping during storage in wafer cassettes, which makes it difficult to automate handling and transportation.

To solve this problem, a method has been proposed in which a glass substrate, a ceramic substrate, a silicon wafer substrate, or the like is bonded to a semiconductor wafer via an adhesive to give support to the semiconductor wafer (see, for example, Patent Document 1). By using a support member such as a glass substrate, a ceramic substrate, or a silicon wafer substrate in place of the protective sheet, the handling performance of the semiconductor wafer is greatly improved, and automation of transportation can be achieved.

In the case of handling the semiconductor wafer by using the support member, a step of peeling the support member from the semiconductor wafer after the back grinding of the semiconductor wafer is required. The separation of the support member is performed by a method such as (1) dissolving or decomposing the adhesive between the support member and the semiconductor wafer with a chemical agent, or (2) irradiating an adhesive agent between the support member and the semiconductor wafer by photolysis . However, in the method (1), a long time is required to diffuse the chemical in the adhesive, and in the method (2), there is a problem that long-time treatment is required for laser scanning. In either method, there is a problem that it is necessary to prepare a special substrate as the support member.

For this reason, a method has been proposed in which, after the starting point of peeling is formed at the time of peeling of the support member, the peeling is performed physically and mechanically (see, for example, Patent Documents 2 and 3). This method eliminates the need for long-time processing required for dissolution or decomposition by conventional chemical agents of the adhesive, or photodecomposition by laser scanning, and enables short-time processing. After removing the support member from the semiconductor wafer, the residue of the adhesive on the semiconductor wafer, which is generated when the support member is peeled off, is thereafter cleaned with a chemical agent.

The back-side semiconductor wafer is then transferred to a dicing step and cut into individual chips. As described above, when the thickness of the semiconductor chip is 50 mu m or less, It is very difficult to handle the semiconductor wafer due to warping of the semiconductor wafer or warping when stored in the wafer cassette. Therefore, prior to peeling of the support member immediately after the back grinding of the semiconductor wafer, It is common that the singing tapes are joined and fixed to the ring frame. Therefore, the cleaning of the residue of the adhesive agent on the semiconductor wafer, which occurs at the time of peeling off the support member, is carried out with the semiconductor wafer adhered to the dicing tape, and the dicing tape is required to have high solvent resistance.

As a dicing tape having a high solvent resistance, it has been proposed to include an energy radiation curable acrylic resin composition in a pressure-sensitive adhesive layer, and further to make the gel fraction 70% or more (for example, see Patent Document 4).

Japanese Patent Laid-Open No. 2006-135272 Japanese Patent Publication No. 2011-510518 U.S. Patent Application Publication No. 2011/0272092 Japanese Patent Application Laid-Open No. 2009-224621

However, the adhesive tape for semiconductor processing disclosed in Patent Document 4 does not have the solid adhesion required for the physical and mechanical peeling of the support member as shown in the above-described Patent Documents 2 and 3, There is a problem that the semiconductor wafer is peeled off from the adhesive tape for semiconductor processing.

Therefore, in the manufacturing process of a semiconductor element using a support member, even when a cleaning liquid for cleaning an adhesive residue that has adhered to a semiconductor wafer touches the pressure-sensitive adhesive, even if the pressure-sensitive adhesive is dissolved and the semiconductor element is contaminated And a solid adhesive property required for physical and mechanical peeling of the support member. The present invention also provides a pressure-sensitive adhesive tape for semiconductor processing.

DISCLOSURE OF THE INVENTION The inventors of the present invention have made intensive investigations to achieve the above object and as a result have found that a pressure-sensitive adhesive tape for semiconductor processing having a pressure-sensitive adhesive layer on a base resin film has a gel fraction of a specific value, In the manufacturing process of the semiconductor element including the physical and mechanical peeling step of the support member, even when the cleaning liquid comes into contact with the pressure-sensitive adhesive, the pressure-sensitive adhesive does not dissolve to contaminate the semiconductor element, And it is possible to provide a solid adhesive property required for peeling. The present invention is based on this finding.

That is, the pressure-sensitive adhesive tape for semiconductor processing according to the present invention is a pressure-sensitive adhesive tape for semiconductor processing, in which a radiation-curable pressure-sensitive adhesive layer is formed on at least one surface of a base resin film, wherein the pressure-sensitive adhesive layer has a gel fraction of 65% And the peak value of the probe tack test before the ultraviolet irradiation of the pressure-sensitive adhesive layer is 200 to 600 kPa.

The pressure-sensitive adhesive layer for semiconductor processing is characterized in that the pressure-sensitive adhesive layer contains at least an acrylic polymer having a radiation-curable carbon-carbon double bond in its molecule, a photopolymerization initiator and a polypropylene oxide, Is preferably contained in an amount of not less than 0.1 mass% and not more than 2.0 mass% with respect to the total solid content of the pressure-sensitive adhesive layer.

In the adhesive tape for semiconductor processing, the polypropylene oxide preferably has a number average molecular weight of more than 3000 and not more than 10,000.

The adhesive tape for semiconductor processing preferably has a parallel light ray transmittance of a light ray having a wavelength of 1064 nm incident from the base resin film side of 88% or more and less than 100%.

It is preferable that the surface roughness Ra of the base resin film on the side opposite to the pressure-sensitive adhesive layer is 0.1 占 퐉 or more and 0.3 占 퐉 or less. The surface roughness Ra is more preferably 0.12 탆 or more and 0.19 탆 or less.

According to the present invention, even in the case where the cleaning liquid for cleaning the adhesive residue, which has adhered the support member to the semiconductor wafer, touches the pressure-sensitive adhesive in the process of manufacturing the semiconductor element using the support member, And it is also possible to provide a solid adhesive property required for physical and mechanical peeling of the support member.

Hereinafter, embodiments of the present invention will be described in detail.

In the pressure-sensitive adhesive tape for semiconductor processing according to the embodiment of the present invention, at least one pressure-sensitive adhesive layer is formed on at least one side of the base resin film.

In the pressure-sensitive adhesive tape for semiconductor processing according to the embodiment of the present invention, the gel fraction of the pressure-sensitive adhesive layer is 65% or more, preferably 70% or more, more preferably 80% or more. The gel fraction is a gel fraction for a drug for dissolving or decomposing an adhesive used for bonding a support member to a semiconductor wafer during back grinding of a semiconductor wafer, and preferably a gel fraction for methyl isobutyl ketone. When the gel fraction is too low, the chemical resistance of the pressure-sensitive adhesive layer is low, and in the process of manufacturing a semiconductor device in which the pressure-sensitive adhesive tape for semiconductor processing is likely to be exposed to chemicals such as methyl isobutyl ketone and derivatives thereof, The pressure sensitive adhesive tends to contaminate the semiconductor chip.

In the present invention, the gel fraction refers to the ratio of crosslinked pressure-sensitive adhesive component excluding the crosslinked component in the pressure-sensitive adhesive layer. For the calculation of the gel fraction, the following method was used. In the present invention, the gel fraction is measured in the state that the surface of the pressure-sensitive adhesive layer is protected with a separator or the like immediately after the pressure-sensitive adhesive layer is formed, and the pressure-sensitive adhesive layer before the energy ray irradiation.

(Calculation of gel fraction)

The separator was removed from the adhesive tape for semiconductor processing cut into a size of 50 mm x 50 mm, and the mass A thereof was weighed. Next, a sample of the weighed adhesive tape for semiconductor processing was immersed in, for example, 100 g of methyl isobutyl ketone (MIBK) for 48 hours, dried in a constant temperature layer at 50 캜, and its mass B was weighed. Further, the pressure sensitive adhesive layer of the sample was wiped off using 100 g of ethyl acetate, and the mass C of the sample was weighed, and the gel fraction was calculated by the following equation (1).

The peak value of the probe tack test before the irradiation of the pressure-sensitive adhesive layer with the radiation is 200 to 600 kPa. If the peak value of the probe tack test is too small, the adhesion of the pressure sensitive adhesive layer to the adherend is insufficient, making it difficult to peel off the support member. If the peak value of the probe tack test is too large, pool residue and chipping tend to occur. For the measurement of the probe tag, the following method is used.

(Measurement of probe tag)

The measurement of the probe tack is performed using, for example, a TAC-II tacking machine of Resuka Corporation. In the measurement mode, the probe is pressed to the set pressure value, and Constant Load is used to continuously control the pressure value until the set time elapses. After peeling the separator, the pressure sensitive adhesive layer of the pressure-sensitive adhesive tape is set up, and a probe made of SUS304 having a diameter of 3.0 mm is brought into contact from the upper side. The speed at which the probe is brought into contact with the measurement sample is 30 mm / min, the contact load is 0.98 N, and the contact time is 1 second. Thereafter, the probe is moved upward with a peeling speed of 600 mm / min, and the force required to release is measured. The probe temperature is 23 占 폚 and the plate temperature is 23 占 폚.

Hereinafter, each component of the adhesive tape for semiconductor processing of the present embodiment will be described in detail.

(Base resin film)

As the base resin film, when UV is used as the radiation for curing the pressure-sensitive adhesive layer, the base resin film must be light-transmissive. In addition, when it becomes necessary to enter the laser beam over the adhesive tape for semiconductor processing, it is required to be similarly transmissive. In order to allow the laser to be incident on the adhesive tape for semiconductor processing, the parallel light transmittance of the adhesive tape for semiconductor processing needs to be not less than 88% and less than 100%. However, since the diffused light can be reduced by applying the adhesive layer, There is no need to consider diffused light, and the parallel light transmittance of the base resin film does not necessarily have to be more than 88% and less than 100%.

On the other hand, when it is not necessary to form a modified region on a semiconductor wafer by using an electron beam as radiation and entering a laser beyond the adhesive tape for semiconductor processing, the base resin film does not necessarily have to be light transmissive.

Examples of the material constituting the base resin film include polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymer and polybutene, ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer and ethylene- (meth) Ethylene copolymers such as polyethylene terephthalate, polybutylene terephthalate, polycarbonate, engineering plastics such as methyl polymethacrylate, flexible polyvinyl chloride, semi-rigid polyvinyl chloride, polyester, polyurethane, Polyamide, polyimide natural rubber, and synthetic rubber. Further, a mixture of two or more kinds selected from these groups may be mixed or a layered structure may be selected, and it may be arbitrarily selected depending on the adhesiveness with the pressure-sensitive adhesive layer. As the base resin film, a film made of an ionomer of an ethylene-acrylic acid copolymer is more preferable.

The thickness of the base resin film is not particularly limited, but is preferably 10 to 500 占 퐉, more preferably 40 to 400 占 퐉, and particularly preferably 70 to 250 占 퐉.

The surface roughness (arithmetic mean roughness Ra) of the surface of the base resin film opposite to the surface to which the pressure-sensitive adhesive layer is in contact is not particularly limited. However, when it becomes necessary to enter the laser over the adhesive tape for semiconductor processing, More preferably 0.12 to 0.19 탆. When the surface roughness (arithmetic mean roughness Ra) of the surface of the base resin film opposite to the side contacting with the pressure-sensitive adhesive layer is larger than 0.3 占 퐉 when it becomes necessary to enter the laser over the adhesive tape for semiconductor processing, A laser light having transmittance with respect to the dicing tape is incident on the back surface of the semiconductor wafer through the dicing tape by aligning the light-converging point inside the semiconductor wafer with the dicing tape adhered to the back surface of the semiconductor wafer, , A method of forming a modified region by multiphoton absorption in a semiconductor wafer along a line along which a semiconductor wafer is to be cut along a line along which the semiconductor wafer is to be cut and dividing the semiconductor wafer along the line along which the object is intended to be cut starting from the modified region So that the incident laser light is irradiated onto the surface of the base resin film which is in contact with the pressure- Is spread on the surface of the facets on the other side, it is not possible to efficiently form a modified region caused by multiphoton absorption within the semiconductor wafer. On the other hand, if the surface roughness (arithmetic average roughness Ra) of the surface of the base resin film opposite to the surface contacting with the pressure-sensitive adhesive layer is less than 0.1 탆, the slidability of the surface of the base resin film opposite to the surface tangent to the pressure- It becomes difficult to uniformly extend the chip interval when the intervals of the divided chips are expanded by the expansion process. The surface roughness of the surface of the base resin film opposite to the side contacting with the pressure-sensitive adhesive layer can be controlled by adjusting the surface roughness of the cooling roll at the time of film extrusion in the case of T-die method or calender method, Can be controlled by adjusting the surface roughness of the belt. It can also be controlled by coating various resins with a film having an arbitrary surface roughness.

The surface of the base resin film in contact with the pressure-sensitive adhesive layer may be subjected to a corona treatment or a treatment such as a primer in order to improve the adhesion.

(Pressure-sensitive adhesive layer)

The pressure-sensitive adhesive layer is formed by using an acrylic radiation-curable acrylic resin composition containing an acrylic compound having an unsaturated double bond in its molecule as its main component and a photopolymerization initiator and a curing agent as a subcomponent.

Examples of the acrylic compound having an unsaturated double bond in the molecule include, for example, pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, hexyl acrylate, Octyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, methoxy ethyl acrylate, ethoxy ethyl acrylate, or similar methacrylates thereof, acrylic acid having a functional group, methacrylic acid, But are not limited to, acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, hydroxyalkyl acrylates, hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, Acrylamides, acrylamides, acrylamides, acrylamides, methacrylamides, acrylamides, acrylamides, Acrylate, vinyl acetate, styrene, acrylonitrile, vinyl chloride, maleic anhydride, maleic anhydride, maleic anhydride, maleic anhydride, maleic anhydride, maleic anhydride, maleic anhydride, (Hereinafter referred to as " (compound 1) "), which is obtained by introducing a photopolymerizable carbon-carbon double bond into a mixture of one kind or plural kinds of polymers selected from the group consisting of alcohols,

Here, in order to increase the gel fraction of the pressure-sensitive adhesive layer, when a general method of selecting a high-molecular weight acrylic resin composition as proposed in Patent Document 4 and bridging them with a crosslinking agent is used, The toughness tends to deteriorate, which results in deteriorating the firm adhesion required for the physical and mechanical peeling of the support member.

Therefore, the acrylic compound having a functional group copolymerized with (Compound 1) is not particularly limited, but it is preferable to increase the molecular weight of the acrylic pressure-sensitive adhesive containing the acrylic compound and the curing agent (that is, , The acrylic compound having a functional group preferably has a large molecular weight and the molecular weight thereof is preferably 100 or more, more preferably 115 or more. For example, when a hydroxyalkyl acrylate is used as the acrylic compound having a functional group, 2-hydroxypropyl acrylate (molecular weight 130) rather than 2-hydroxyethyl acrylate (molecular weight 116), 4-hydroxybutyl Acrylate (molecular weight 144), and 1,4-cyclohexanedimethanol monoacrylate (molecular weight 198). When hydroxyalkylacrylamides are used as acrylic compounds having functional groups, N- (2-hydroxyethyl) acrylamide (molecular weight: 115), N (hydroxymethyl) acrylamide - (2-hydroxypropyl) acrylamide (molecular weight: 129) is preferred. By using a monomer having a large molecular weight as an acrylic compound having a functional group, the molecular movement of the crosslinking point is facilitated and flexibility can be obtained by the pressure-sensitive adhesive layer.

(Compound 1), a method of introducing a photopolymerizable carbon-carbon double bond by reacting a compound having a functional group at the side chain of the compound (Compound 1) and having a functional group capable of addition reaction with the compound and a photopolymerizable carbon- 1). (Meth) acrylate and the like, when the side chain to be subjected to the addition reaction is a carboxyl group or an acid anhydride, examples of the compound having a functional group capable of addition reaction with the compound (compound 1) and a photopolymerizable carbon-carbon double bond include glycidyl (Meth) acrylic acid and the like. When the side chain to be subjected to the addition reaction is a hydroxyl group, 2-isocyanatoalkyl (meth) acrylate and the like can be used. .

The acrylic compound having an unsaturated double bond in the molecule preferably has a weight average molecular weight of 100000 to 2000000, more preferably a weight average molecular weight of 300000 to 1500000 in terms of chemical resistance. When the weight average molecular weight is less than 100000, the chemical resistance of the resin is low, so that the pressure-sensitive adhesive layer is dissolved by the cleaning liquid used for removing the support member, and the semiconductor substrate may be contaminated. On the other hand, a high molecular weight polymer having a weight average molecular weight of 1,000,000 or more has a very high viscosity, and therefore, it is difficult to prepare the polymer in a state suitable for use as a pressure-sensitive adhesive.

The photopolymerization initiator usable in the present invention is not particularly limited and any conventionally known photopolymerization initiator can be used. Examples thereof include benzophenones such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone and 4,4'-dichlorobenzophenone, acetophenone, diethoxyacetophenone and the like Anthraquinones such as acetophenone, 2-ethyl anthraquinone and t-butyl anthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triaryl An imidazole dimer (lopin dimer), an acridine compound, etc. These may be used alone or in combination of two or more.

The amount of the photopolymerization initiator to be added is preferably 0.1 to 15 parts by mass, more preferably 0.5 to 12 parts by mass, per 100 parts by mass of the acrylic compound into which the photopolymerizable carbon-carbon double bond is introduced.

The curing agent is a compound selected from polyisocyanates, melamine-formaldehyde resin, and epoxy resin, and these can be used alone or in combination of two or more. The cross-linking structure resulting from the reaction with the acrylic compound increases the molecular weight of the acrylic pressure-sensitive adhesive containing the acrylic compound and the curing agent, so that the solvent resistance can be improved after application of the pressure-sensitive adhesive.

The polyisocyanates are not particularly limited and include, for example, 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'-diphenyl ether diisocyanate, Aromatic isocyanates such as 2,2-bis (4-phenoxyphenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, isophorone diisocyanate, Dicyclohexylmethane diisocyanate, dicyclohexylmethane diisocyanate, lysine diisocyanate, and lysine triisocyanate. Specific examples of the commercially available products include Coronate L (manufactured by Nippon Polyurethane Industry Co., Ltd.) ) Can be used.

Specific examples of commercially available melamine formaldehyde resins include Nigalak MX-45 (manufactured by Sanwa Chemical Co., Ltd.) and melan (manufactured by Hitachi Kasei Kabushiki Kaisha).

In the present invention, it is particularly preferable to use a polyisocyanate.

The type of crosslinking agent is not particularly limited, but as described above, the molecular weight of the acrylic pressure-sensitive adhesive containing the acrylic compound and the curing agent (that is, the increase of the crosslinking score) and the acrylic pressure-sensitive adhesive containing the acrylic compound and the curing agent at the time of forming the crosslinked structure obtained by reacting with the And the flexibility (tacking force) of the copper-based pressure-sensitive adhesive, it is preferable that the molecular weight per one functional group is large, and the molecular weight per one functional group of the crosslinking agent is preferably 150 or more, more preferably 200 or more. For example, when a polyisocyanate is used as the crosslinking agent, it is preferable that the molecular weight per one isocyanate group is large. It is preferable to use an allophanate type or an adduct type rather than a burette type or isocyanurate type. When the acrylic pressure sensitive adhesive containing the acrylic compound and the curing agent has the same crosslinking score, that is, when the acrylic pressure sensitive adhesive containing the acrylic compound and the curing agent has substantially the same molecular weight after the crosslinked structure is formed, the acrylic pressure sensitive adhesive containing the acrylic compound and the curing agent The acrylic pressure sensitive adhesive containing the acrylic compound and the curing agent becomes more flexible, and the tacking force is increased to a large extent because the molecular movement of the crosslinking point becomes easier when the one having a larger molecular weight per isocyanate group is used can do.

The amount of the curing agent to be added is not particularly limited, but is preferably 0.1 to 15 parts by mass, more preferably 1 to 10 parts by mass, per 100 parts by mass of the acrylic compound having an unsaturated double bond in the molecule. If the amount is less than 0.1 part by mass, the effect of improving the cohesive strength tends to be insufficient. If the amount is more than 15 parts by mass, the curing reaction proceeds rapidly during the compounding of the pressure-sensitive adhesive and the coating operation to form a crosslinked structure, There is a case.

The ratio of the acrylic compound having an unsaturated double bond in the molecule and the crosslinking agent capable of reacting with the acrylic compound to the total solid content of the pressure-sensitive adhesive layer is preferably 85% by mass or more.

The adhesive tape for semiconductor processing is bonded to the grinding surface of the semiconductor wafer immediately prior to the separation of the support member immediately after the rear surface grinding of the semiconductor wafer. In the adhesive tape for semiconductor processing disclosed in Patent Document 4, There is a problem that it becomes difficult to peel off the wafer after it has been bonded to the wafer surface. Therefore, even in the case of joining to the wafer surface before the formation of the oxide film immediately after the back side grinding, it is preferable to add polypropylene oxide in order to facilitate the subsequent peeling.

The polypropylene oxide is not particularly limited and may be appropriately selected from conventional polypropylene oxides. The number average molecular weight of the polypropylene oxide is preferably more than 3000 and not more than 10,000, more preferably 4000 to 10,000. If the number average molecular weight of the polypropylene oxide is too large, the affinity between the polypropylene oxide and the acrylic polymer (X) is poor and the adherend is contaminated. When the number average molecular weight of the polypropylene oxide is too small, the water resistance of the pressure-sensitive adhesive layer becomes insufficient, and the pressure-sensitive adhesive layer swells due to the cutting water, resulting in the occurrence of meandering of the dicing line.

From the viewpoint of contamination to an adherend, polyoxypropylene-glyceryl ether having a number average molecular weight of more than 3000 and less than 10,000, more preferably 4000 to 10000 is preferable. The use of polyoxypropylene-glyceryl ether having a number average molecular weight within this range increases the number of hydroxyl groups in the polypropylene oxide molecule from 2 to 3, so that the reaction of the polypropylene oxide with the crosslinking agent, such as polyisocyanate, The polypropylene oxide shifts to the adherend interface and the contamination on the surface of the adherend can be reduced.

Examples of polypropylene oxides having a number average molecular weight of more than 3000 and not more than 10000 include Uniol D-4000 (number average molecular weight 4000) ((trade name), manufactured by Nichiyu Corporation), Prinin S4007 (number average molecular weight 5000) (Product name) manufactured by Asahi Glass Co., Ltd.) and Prinin S4011 (number average molecular weight 10000) (product name, manufactured by Asahi Glass Co., Ltd.). As the polyoxypropylene-glyceryl ether having a number-average molecular weight of more than 3000 and not more than 10,000, there can be mentioned a polyester polyol having a number average molecular weight of 4000 (trade name, (Product name) manufactured by Asahi Glass Co., Ltd.), Prismol S3011 (number average molecular weight 10,000) ((product name), manufactured by Asahi Glass Co., Ltd.), and the like. .

The blending amount of the polypropylene oxide having a number average molecular weight of more than 3000 and not more than 10,000 is preferably from 0.1 to 3.0 mass parts per 100 parts by mass of the acrylic polymer (X) having a radiation-curable carbon-carbon double bond in the molecule and / Preferably 0.5 to 2.0 parts by mass, per 100 parts by mass of the resin. When the blending amount of the polypropylene oxide is too small, the thin semiconductor chip can be efficiently removed from the large diameter semiconductor wafer when the dicing adhesive tape or sheet is bonded to the unstable wafer grinding surface in which the natural oxide film is not formed entirely Can not be picked up. If the blending amount of the polypropylene oxide is too large, the tackiness before the radiation curing becomes insufficient, the end of the chip is peeled off at the time of dicing, and the cutting dust is attached to the back of the chip.

The pressure-sensitive adhesive composition for forming the pressure-sensitive adhesive layer may contain, if necessary, a known pressure-sensitive adhesive composition such as a tackifier, an anti-aging agent, a filler, a colorant, a flame retardant, an antistatic agent, a softener, an ultraviolet absorber, an antioxidant, a plasticizer, Additives and the like may be included.

The acrylic resin composition for forming the pressure-sensitive adhesive layer used in the present invention may contain an ultraviolet curable monomer, an ultraviolet-curable oligomer, a tackifier, a pressure-sensitive adhesive adjuster, a surfactant or the like or other modifiers as needed, The addition of the material may reduce the gel fraction of the pressure-sensitive adhesive and deteriorate the chemical resistance. Therefore, it is preferably 20 parts by mass or less based on 100 parts by mass of the acrylic compound having an unsaturated double bond in the molecule, More preferably 10 parts by mass or less, further preferably 5 parts by mass or less.

The thickness of the pressure-sensitive adhesive layer is preferably from 5 탆 to 70 탆, more preferably from 8 탆 to 50 탆, and further preferably from 10 탆 to 30 탆. If the pressure-sensitive adhesive layer is too thin, it is not possible to follow the irregularities of the electrode, and there is a problem that the cutting water and the cutting chips are infiltrated during the dicing process. On the other hand, if it is too thick, The quality of the product deteriorates.

In the present invention, as the energy ray for curing the pressure-sensitive adhesive layer, radiation is preferable, and examples of radiation include light rays such as ultraviolet (UV) rays, electron rays and the like.

In the present invention, the pressure-sensitive adhesive layer preferably contains both of the following compounds (a) to (c).

(a) an acrylic compound having an unsaturated double bond comprising the following compounds (a1) to (a3), which has a weight average molecular weight of 100000 to 2000000

(a1) acrylates such as pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, hexyl acrylate, n-octyl acrylate, isooctyl acrylate, Methacrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, hydroxyalkyl acrylates, methacrylic acid, methacrylic acid, methacrylic acid, N-methylol acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-methylol acrylamide, N- Alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl Glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, vinyl acetate, styrene, acrylonitrile, one kind of or plural kinds selected from a vinyl alcohol polymer, or the mixture of the polymer myeotjong

(a2) Acrylic compounds having a functional group copolymerized with the compound (a1), which are hydroxyalkyl acrylates or hydroxyalkyl acrylamides and which have a molecular weight of 100 or more

(a3) a compound having a functional group capable of addition reaction with the compound (a1) and a photopolymerizable carbon-carbon double bond, when the side chain to be subjected to the addition reaction is a carboxyl group or an acid anhydride, glycidyl (meth) acrylate (Meth) acrylic acid when the side chain to be subjected to the addition reaction is an epoxy group, and 2-isocyanatoalkyl (meth) acrylate when the side chain to be subjected to the addition reaction is a hydroxyl group

(b) a photopolymerization initiator

(c) from 0.1 to 15 parts by mass of polyisocyanates relative to 100 parts by mass of the compound (a)

The method of forming the pressure-sensitive adhesive layer on the base resin film is not particularly limited. For example, the acrylic resin composition may be coated on a base resin film by a commonly used coating method, dried and formed, And then transferring a pressure-sensitive adhesive layer to a base resin film by bonding it to a base resin film.

Further, if necessary, a synthetic resin film, which is usually used as a separator, may be adhered to the pressure-sensitive adhesive layer side to protect the pressure-sensitive adhesive layer until it is used for practical use. Examples of the constituent material of the synthetic resin film include synthetic resin films such as polyethylene, polypropylene, and polyethylene terephthalate, and paper. The surface of the synthetic resin film may be subjected to a peeling treatment such as a silicone treatment, a long-chain alkyl treatment, or a fluorine treatment, if necessary, in order to improve the peeling property from the pressure-sensitive adhesive layer 3. The thickness of the synthetic resin film is usually about 10 to 100 占 퐉, preferably about 25 to 50 占 퐉.

Further, in the case where it is required to cause the laser beam to be incident on the adhesive tape for semiconductor processing according to the embodiment of the present invention beyond the adhesive tape for semiconductor processing, for example, in the case where it is provided in a method called stealth dicing as described above, A parallel light ray transmittance of a light beam having a wavelength of 1064 nm incident from the side of the resin film is preferably 88% or more and less than 100% to prevent attenuation or diffusion of the laser beam before it reaches the semiconductor wafer, . Of course, there is no particular limitation on the parallel light transmittance of a light beam having a wavelength of 1064 nm when there is no need to enter the laser light beyond the adhesive tape for semiconductor processing.

Next, the support member will be described.

(Support member)

The support member includes a material selected from the group consisting of silicon, sapphire, quartz, metal (for example, aluminum, copper, steel), various glasses and ceramics. The surface of the support member on which the adhesive is adhered may include another material deposited. For example, it is also possible to deposit silicon nitride on a silicon wafer, thereby changing the bonding characteristics.

(Attachment of Support Member)

In attaching the support member, an adhesive agent solution of an adhesive described later is applied to a circuit formation surface of a semiconductor wafer, and then the applied adhesive is dried in an oven or a hot plate. Further, in order to obtain a necessary thickness of the adhesive (adhesive layer), the application of the adhesive liquid and the preliminary drying may be repeated plural times.

Further, in applying the adhesive liquid of the adhesive to the circuit-forming surface of the semiconductor wafer, it is preferable that before the application of the adhesive liquid of the adhesive, as disclosed in Japanese Patent Application Laid-Open No. 2009-528688, The plasma polymer separating layer may be peeled off between the circuit forming surface of the semiconductor wafer and the plasma polymer separating layer at the time of peeling off the support member.

Further, when the adhesive liquid is coated on the circuit formation surface of the semiconductor wafer by a spin coater, there is a case where a bead portion having a higher level is formed on the periphery. In this case, it is preferable to remove the bead portion with a solvent before preliminarily drying the adhesive solution.

(glue)

As the adhesive, commercially available ones can be used in the present invention. For example, a WaferBONDTM material (WaferBONDTM HT 10.10 for slide bonding process, WaferBONDTM CR200 for chemical bonding process) sold by Brewer Science (Lola, MO) and ELASTOSIL LR 3070 made by WACKER .

In addition, a resin or a polymer which exhibits a high adhesive force to a semiconductor material, glass or metal is also preferably used. Particularly preferably, (a) is a high solids content, and is a UV curable resin such as reactive epoxies and acrylics, (B) a thermosetting resin of the same kind as a two-component epoxy or a silicone adhesive, (c) a polymer or copolymer of thermoplastic acrylic resin, styrene resin, vinyl halide (not containing fluorine) resin or vinyl ester, , A polyimide, a polysulfone, a polyether sulfone, or a polyurethane, in a molten state or as a solution coating film, and is baked and baked after the application, thereby making the support member and the semiconductor wafer one- D) Tackifiers based on cyclic olefins, polyolefin rubbers (for example, polyisobutylene) or (e) hydrocarbons It may be a flow.

As the adhesive, since water is used at the time of polishing, a water-insoluble polymer compound is preferable, and a high softening point is preferable. Examples of such a polymer compound include novolak resins, epoxy resins, amide resins, silicone resins, acrylic resins, urethane resins, polystyrene, polyvinyl ethers, polyvinyl acetate and modified products thereof or mixtures thereof in a solvent. Among them, an acrylic resin material is preferable because it has heat resistance of 200 占 폚 or more, less gas is generated, and cracks are less likely to occur. The novolak resin also has no scum, and the heat resistance, the amount of generated gas and cracks are lower than those of the acrylic resin material, but the softening point is high and the peeling of the adhesive after peeling is also preferable. In addition to this, a plasticizer may be mixed to prevent cracking during film formation.

As the solvent, it is preferable that the resin can be dissolved and uniformly formed on the wafer, and it is preferable to use a ketone (for example, acetone, methyl ethyl ketone, cyclohexane, methyl isobutyl ketone, , 2-heptanone, etc.), polyhydric alcohols or derivatives thereof (for example, ethylene glycol, propylene glycol, diethylene glycol, ethylene glycol monoacetate, propylene glycol monoacetate, diethylene glycol monoacetate, , Monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether), cyclic ethers (e.g. dioxane), esters (e.g., ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, Methyl pyruvate, ethyl pyruvate, methyl methoxypropionate and ethyl ethoxypropionate) or aromatic hydrocarbons (for example, benzene, Toluene, xylene, etc.). Of these, ketones or derivatives thereof are particularly preferable.

These may be used alone or in combination of two or more. In order to improve the uniformity of the film thickness, an activator may be added to these.

(Cleaning liquid for adhesive residues)

As the cleaning liquid for removing the adhesive residue remaining on the semiconductor wafer 1 after peeling off the adhesive agent and the support member from the semiconductor wafer, monohydric alcohols (for example, methanol, ethanol, (E.g., propanol, isopropanol, butanol, etc.), lactones (e.g.,? -Butyrolactone), lactams Etc.), aldehydes (for example, dimethylformaldehyde, dimethylacetaldehyde, etc.) may be used. Among them, the aforementioned ketones or derivatives thereof are particularly preferable.

These may be used alone or in combination of two or more. Further, in order to efficiently perform cleaning of the adhesive residue, an activator may be added to these.

Next, the present invention will be described in more detail based on examples. Hereinafter, the present invention will be described by way of examples, but the present invention is not limited to these examples.

(Example 1)

Hydroxypropyl acrylate side chain OH group was added to a copolymer of 2-ethylhexyl acrylate (70 mol%), methacrylic acid (1 mol%) and 2-hydroxypropyl acrylate (29 mol% (A1: molecular weight 700000) having a photopolymerizable carbon-carbon double bond in which an NCO group of 2-methacryloyloxyethyl isocyanate was subjected to addition reaction was obtained as a compound having a carbon double bond and a functional group. 1 part by mass of trimethylolpropane-modified hexamethylene diisocyanate as a polyisocyanate and 5.0 parts by mass of Irgacure-184 manufactured by BASF Corporation as a photopolymerization initiator were added to 100 parts by mass of the compound (A1) to obtain a radiation curable pressure- To prepare a resin composition. The resin composition was coated on the release treated surface of the polyethylene terephthalate separator previously subjected to the release treatment so that the thickness of the pressure sensitive adhesive layer after drying was 10 占 퐉 and dried at 80 占 폚 for 10 minutes, And the pressure-sensitive adhesive was transferred to the base resin film to prepare a pressure-sensitive adhesive tape for semiconductor processing.

(Example 2)

Hydroxybutyl acrylate side chain OH groups of a copolymer of ethyl acrylate (70 mol%), methacrylic acid (1 mol%) and 4-hydroxybutyl acrylate (29 mol% And an NCO group of 2-methacryloyloxyethyl isocyanate was added as a compound having a functional group to obtain an acrylic compound having a photopolymerizable carbon-carbon double bond (A2: molecular weight: 180,000). 1 part by mass of trimethylolpropane-modified hexamethylene diisocyanate as a polyisocyanate and 5 parts by mass of Irgacure-184 manufactured by BASF Corporation as a photopolymerization initiator were added to 100 parts by mass of the compound (A2) to obtain a radiation curable pressure- To prepare a resin composition. The resin composition was coated on the release treated surface of the polyethylene terephthalate separator previously subjected to the release treatment so that the thickness of the pressure sensitive adhesive layer after drying was 10 占 퐉 and dried at 80 占 폚 for 10 minutes, (Base resin film) of the ethylene-acrylic acid copolymer prepared so as to have a surface roughness of 0.3 on the side opposite to that of the surface of the substrate, and transferring the pressure-sensitive adhesive onto the base resin film, Respectively.

(Example 3)

A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1 except that 3 parts by mass of trimethylolpropane-modified hexamethylene diisocyanate was used as polyisocyanate.

(Example 4)

A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1 except that 0.1 part by mass of trimethylolpropane-modified hexamethylene diisocyanate was added as polyisocyanate.

(Example 5)

A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that 20.0 parts by mass of pentaerythritol tetraacrylate was further blended as the ultraviolet ray-curable resin into the radiation curable pressure sensitive adhesive of Example 1.

(Example 6)

A radiation curable pressure-sensitive adhesive of Example 1 was prepared in the same manner as in Example 1, except that 0.1 part by mass of PREMINOL S3011 (number average molecular weight 10,000) manufactured by Asahi Glass Co., Ltd. was further blended as polypropylene oxide, Thereby producing an adhesive tape.

(Example 7)

A radiation curable pressure-sensitive adhesive of Example 1 was prepared in the same manner as in Example 1 except that 1.0 part by mass of PREMINOL S3006 (number average molecular weight: 5000) manufactured by Asahi Glass Co., Ltd. was used as polypropylene oxide, Thereby producing an adhesive tape.

(Example 8)

A radiation curable pressure-sensitive adhesive of Example 1 was prepared in the same manner as in Example 1, except that 2.0 parts by mass of UNIOL TG-4000 (number average molecular weight: 4,000) as a polypropylene oxide, manufactured by Nichiyu K.K., A pressure-sensitive adhesive tape for processing was produced.

(Example 9)

Except that 2.5 parts by mass of PREMINOL S3006 (number average molecular weight: 5000) manufactured by Asahi Glass Co., Ltd. was further blended as the polypropylene oxide into the radiation-curable pressure-sensitive adhesive of Example 1, Thereby producing an adhesive tape.

(Example 10)

As the base resin film, a pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that low density polyethylene prepared in advance was subjected to corona treatment and surface roughness of the surface on the opposite side was 0.19 占 퐉.

(Example 11)

The same procedure as in Example 1 was carried out except that an ionomer film of an ethylene-acrylic acid copolymer prepared so as to have a surface subjected to corona treatment in advance and having a surface roughness of 0.12 탆 on the opposite side was used as the base resin film, A pressure-sensitive adhesive tape for processing was produced.

(Example 12)

Except that an ethylene-methacrylic acid copolymer prepared so as to have a surface subjected to corona treatment in advance and having a surface roughness of 0.1 mu m on the surface opposite to the surface was used as the base resin film, A tape was produced.

(Example 13)

Except that an ethylene-vinyl acetate copolymer film prepared in advance so that the surface thereof was corona-treated and the surface of the opposite side thereof had a surface roughness of 0.08 mu m was used as the base resin film, A tape was produced.

(Comparative Example 1)

A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that 30.0 parts by mass of pentaerythritol tetraacrylate was further blended as the ultraviolet ray curable resin in the radiation curable pressure sensitive adhesive of Example 1.

(Comparative Example 2)

Hydroxyethyl acrylate side chain OH group was added to a copolymer of 2-ethylhexyl acrylate (75 mol%), methacrylic acid (1 mol%) and 2-hydroxyethyl acrylate (24 mol% (A1: molecular weight 800000) having a photopolymerizable carbon-carbon double bond in which an NCO group of 2-methacryloyloxyethyl isocyanate was subjected to addition reaction was obtained as a compound having a carbon double bond and a functional group. 1 part by mass of Coronate L manufactured by Nippon Polyurethane Industry Co., Ltd. as a polyisocyanate and 5.0 parts by mass of Irgacure-184 manufactured by BASF Corporation as a photopolymerization initiator were added to 100 parts by mass of the compound (A1) To prepare a radiation curable pressure-sensitive adhesive resin composition. This resin composition was coated on the releasably treated surface of the polyethylene terephthalate separator previously subjected to the releasing treatment so that the thickness of the pressure sensitive adhesive layer after drying was 10 占 퐉, dried at 80 占 폚 for 10 minutes, (Base resin film) prepared so as to have a surface roughness of 0.41 on the side opposite to the surface of the substrate, and the pressure-sensitive adhesive was transferred to the base resin film to produce a pressure-sensitive adhesive tape for semiconductor processing Respectively.

(Comparative Example 3)

Sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1 except that 5 parts by mass of trimethylolpropane-modified hexamethylene diisocyanate was blended as polyisocyanate.

(Comparative Example 4)

A pressure-sensitive adhesive tape for semiconductor processing was produced in the same manner as in Example 1, except that 0.05 parts by mass of trimethylolpropane-modified hexamethylene diisocyanate (manufactured by Nippon Polyurethane Industry Co., Ltd.) as polyisocyanate was blended.

For each of the samples of Examples 1 to 13 and Comparative Examples 1 to 4, the gel fraction, the probe tack, the solvent resistance, the peelability of the support member, the pickup property, the adhesion of the adhesive to the back surface of the semiconductor chip With respect to the invasion of the dust, an evaluation test was conducted as follows. The obtained results are summarized in Tables 1 and 2 below.

<Gel fraction>

The separator was removed from the adhesive tape for semiconductor processing cut into a size of 50 mm x 50 mm, and the mass A thereof was weighed. Next, this weighed sample of the dicing tape for semiconductor processing was left in a state of immersed in 100 g of methyl isobutyl ketone (MIBK) for 48 hours, dried in a constant temperature layer at 50 DEG C, and its mass B was weighed. Further, the pressure sensitive adhesive layer of the sample was wiped off using 100 g of ethyl acetate, and the mass C of the sample was weighed, and the gel fraction was calculated by the following equation (1).

&Quot; (1) &quot;

<Probe tag>

Was carried out using a TAC-II tacking tester of Resuka Corporation. In the measurement mode, "Constant Load" was used to press the probe to the set pressure value and to continue to maintain the pressure value until the set time elapsed. After the separator was peeled off, a pressure-sensitive adhesive layer of the adhesive tape for semiconductor processing was raised, and a probe made of SUS304 having a diameter of 3.0 mm was contacted from above. The speed at which the probe is brought into contact with the measurement sample is 30 mm / min, the contact load is 0.98 N, and the contact time is 1 second. Thereafter, the probe was moved upward with a peeling speed of 600 mm / min, and the force required to release was measured, and the peak value was read. The probe temperature was 23 占 폚 and the plate temperature was 23 占 폚.

<Surface roughness Ra>

EXAMPLES The adhesive tapes for semiconductor processing obtained in Examples and Comparative Examples were fixed by bonding the adhesive side to the mirror wafer on which the applied side was smoothed and the arithmetic surface roughness Ra on the side not coated with the adhesive was measured with a surface roughness meter (MD direction) of the base resin film was measured at five arbitrary positions in the base resin film using a commercially available product (trade name: Surf Test SJ-301, manufactured by Mitsutoyo Co., Ltd.).

<Parallel light transmittance>

EXAMPLES The parallel light transmittance at a wavelength of 1064 nm was measured from the surface of the pressure-sensitive adhesive tape for semiconductor processing obtained in Examples and Comparative Examples without applying the pressure-sensitive adhesive using a transmittance meter (trade name: UV3101PC & MPC-3100 manufactured by Shimadzu Seisakusho Co., Ltd.) The mean values were obtained at five sites. This apparatus is a device capable of measuring the total light transmittance with an integrating sphere type light receiving unit. The parallel light ray transmittance was measured by separating the fixed position of the sample by 70 mm from the incidence window of the integrating sphere.

<Solvent resistance>

The adhesive tape for semiconductor processing obtained in Examples and Comparative Examples was bonded to an 8-inch semiconductor wafer, fixed to the ring frame, and then rotated at 20 rpm while spraying methylisobutylketone (MIBK) as an organic solvent from the semiconductor wafer side Spin cleaning was carried out. After the completion of washing and drying, the pressure-sensitive adhesive layer in the region where the semiconductor wafer was not adhered was observed on the dicing tape for semiconductor processing, and when it was judged that the pressure-sensitive adhesive was not dissolved or swollen, And the result was rejected.

&Lt; Support member peelability >

By using the method disclosed in U.S. Patent Application Publication No. 2011/0272092, a plasma polymer separation layer, a silicone rubber adhesive layer, and a glass plate having a thickness of 2.5 mm as a support member are formed on a silicon wafer of 6 inches, Thereby obtaining the structure 1 laminated in this order. The pressure-sensitive adhesive tape for semiconductor processing obtained in Examples and Comparative Examples was bonded to the wafer back surface (surface on which the plasma polymer separation layer and the like were not laminated) of the structure 1 thus obtained, and fixed on the ring frame. To the De-Bonder DB 12T of Example 1, the releasability of the support member was evaluated. The adhesion between the plasma polymer separating layer of the support member and the wafer surface was judged as &quot; Good &quot;, and the adhesion between the plasma polymer separation layer and the wafer surface was evaluated. And the result was rejected.

<Pickup property>

The pickup performance was evaluated according to the following procedure.

(1) An 8-inch semiconductor wafer was ground to a thickness of 50 탆 under the following conditions.

(Grinding condition)

Grinder: "DFG-840" manufactured by DISCO Corporation

1 axis: # 600 grinding wheel (rotational speed: 4800 rpm, down speed: P1: 3.0 탆 / sec, P2: 2.0 탆 / sec)

2 axis: # 2000 grindstone (revolution: 5500 rpm, down speed: P1: 0.8 占 퐉 / sec, P2: 0.6 占 sec)

After the back surface of the silicon wafer was ground 30 占 퐉 in two axes, the silicon wafer was ground to a final thickness of 50 占 퐉.

(2) The dicing tape of each example was applied to the above-mentioned ((i), (ii), and Bonded to the grinding surface of the semiconductor wafer obtained in (1), and fixed to the ring frame.

(3) The semiconductor wafer fixed to the ring frame in (2) was cut into 15 x 10 mm sides along the line to be divided with the following conditions using a dicing machine (DAD340 manufactured by DISCO Corporation) .

(Dicing conditions)

&Quot; DFD-340 &quot;, manufactured by DISCO Corporation,

Blade: "27HECC" manufactured by Disco Co., Ltd.

Blade revolution: 40000 rpm

Dicing speed: 100mm / sec

Dicing depth: 25 탆

Cut mode: Down cut

Dicing size: 10.0 x 10.0 mm

(4) After 7 days from adhering the adhesive tape for semiconductor processing, the pressure-sensitive adhesive layer was cured by irradiating ultraviolet rays of 100 mJ / mm 2 from the base resin film side of the adhesive tape for semiconductor processing, And picked up using a picker device (CAP-300II manufactured by Canon Machinery Inc.). 50 semiconductor chips were picked up under the following pickup conditions and the number of semiconductor chips that were successfully picked up was counted and when all of the fifty semiconductor chips were successfully picked up under all of the conditions (i) and (ii) , The pickup of all the fifty semiconductor chips in the condition (i) succeeded. In the condition (ii), the occurrence of the pick-up mistake was evaluated as O and the occurrence of the pick-up mistake in the condition (i) ○ was passed and x was rejected.

(Pickup condition)

Die bonder: &quot; CAP-300II &quot; manufactured by Canon Machinery Inc.

Number of pins: 4

Pin spacing: 7.8 x 7.8 mm

Fin end curvature: 0.25 mm

Pin push-up amount: 0.40 mm

<Full residue>

The back surface of the semiconductor chip obtained by the evaluation of the pick-up property was observed with a microscope, and it was judged that it was acceptable when there was no residual remnant and it was judged that the remnant occurred.

<Cutting Dust Intrusion>

The back surface of the semiconductor chip obtained by the evaluation of pick-up properties was observed under a microscope to determine that there was no penetration of cutting dust, and when it was found that some cutting dust invasion had occurred but there was no problem in actual use, And X indicating that there is a possibility of occurrence of a problem in actual use is denoted as &quot; Failure &quot;.

&Lt; Chip Partition Ratio >

The adhesive tape for semiconductor processing obtained in Examples and Comparative Examples was bonded to an 8-inch semiconductor wafer having a thickness of 100 m and fixed to a ring frame. Then, under the stealth dicing conditions shown below, a laser was irradiated over the adhesive tape for semiconductor processing After forming the modified region inside the semiconductor wafer, the adhesive tape for semiconductor processing was expanded by using an expanding device (DDS2300, manufactured by Kabushiki Kaisha Disco Co., Ltd.) under conditions of 300 mm / sec and 10 mm extension, Respectively. Thereafter, the number of completely separated chips was counted by the naked eye to judge that 98% or more of the chips were completely divided, and that satisfying 90% or more and less than 98% was acceptable for practical use. And those with less than 90% were rated as x and rejected.

<Stealth Dicing Condition>

· Device: Nd-YAG laser

· Wavelength: 1064 nm

· Repetition frequency: 100kHz

· Pulse width: 30ns

· Cutting speed: 100 mm / sec

· Cut chip size: 5mm × 5mm

<Chip interval ratio>

The semiconductor wafers used for evaluation of the chip fractionation rate were observed using an optical microscope, and the chip intervals between the 20 chips randomly extracted from the succeeding chips and the chips adjacent to the upper, lower, left, and right sides of the chips were measured. Of these chip intervals, the ratio of the average value of the chip intervals to the chips adjacent to the upper and lower chips and the average value of the chip intervals between the chips adjacent to the right and left sides (the average value of chip intervals between adjacent chips / Of not less than 0.6 and not more than 0.6%, and not less than 1.67 and not more than 2.5, and satisfies the following condition: &lt; EMI ID = 1.0 &gt;Quot; DELTA &quot; practically acceptable, and it was judged that the test was acceptable. Other tests were conducted, and those that failed in evaluating the chip fractionation rate were evaluated as &quot; C &quot;

As shown in Tables 1 and 2, in Examples 1 to 13, in which the gel fraction of the pressure-sensitive adhesive layer was 65% or more and the peak value of the probe tack test before ultraviolet irradiation of the pressure-sensitive adhesive layer was 200 to 600 kPa, The tape can be used without any problem in practical use in the production of a semiconductor device including a glass support step as an acceptance judgment for all evaluation items. In particular, it is preferable that the pressure-sensitive adhesive layer comprises at least an acrylic polymer having a radiation-curable carbon-carbon double bond in its molecule, a photopolymerization initiator and a polypropylene oxide, wherein the polypropylene oxide has a total solids content of the radiation curable pressure- In Examples 6 to 8, which were not less than 0.1% by mass and not more than 2.0% by mass, were more excellent in pick-up properties and were excellent in no occurrence of cutting dust invasion. In Example 9 in which the polypropylene oxide was more than 2.0% by mass with respect to the total solid content of the radiation-curable pressure-sensitive adhesive layer, the pick-up property was superior to those in Examples 1 to 5. However, Level. In Examples 1 to 13, in which the parallel light ray transmittance of a light beam having a wavelength of 1064 nm entered from the base resin film side of the adhesive tape for semiconductor processing was 88% or more and less than 100%, all of the chip division ratios , And the modified region was formed inside the semiconductor wafer by irradiating a laser over an adhesive tape for semiconductor processing, and then the wafer was suitably used for stealth dicing in which the wafer was divided into chip units by using an expanding apparatus. Particularly, in Examples 10 to 13 in which the parallel light transmittance was 93 to 99%, all of the chip division ratios were excellent. In Examples 1 to 12, in which the surface roughness Ra of the base resin film on the side opposite to the pressure-sensitive adhesive layer was 0.1 占 퐉 or more and 0.3 占 퐉 or less, excellent results were obtained in the chip spacing ratio.

On the other hand, in Comparative Example 1 in which the gel fraction of the pressure-sensitive adhesive layer was less than 65%, dissolution or swelling of the pressure-sensitive adhesive was observed in the solvent resistance test, and in Comparative Examples 2 and 3 in which the tack force was less than 200 kPa, separation of the support member failed, In Comparative Example 3, which is larger than 600 kPa, a full remnant occurred on the back surface of the chip, and all of them appeared unsuitable for the production of a semiconductor device including a glass support step. In Comparative Example 2 in which the parallel light ray transmittance of a light beam having a wavelength of 1064 nm incident from the base resin film side of the adhesive tape for semiconductor processing was less than 88%, the chip division ratio was insufficient.

Claims (6)

A method for manufacturing a semiconductor device, comprising: after a back surface of a semiconductor wafer is bonded to a support member for providing support to a semiconductor wafer, the support member is bonded to a polishing surface of the semiconductor wafer prior to peeling of the support member, A pressure-sensitive adhesive tape for semiconductor processing used for dicing a semiconductor wafer,
A radiation curable pressure-sensitive adhesive layer is formed on at least one surface of the base resin film,
Wherein the pressure-sensitive adhesive layer contains both of the following compounds (a) to (c)
(a) an acrylic compound having an unsaturated double bond comprising the following compounds (a1) to (a3), which has a weight average molecular weight of 100000 to 2000000
(a1) acrylates such as pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, hexyl acrylate, n-octyl acrylate, isooctyl acrylate, Acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, hydroxyalkyl acrylates, methacrylic acid, methacrylic acid, methacrylic acid, N-methylol acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-methylol acrylamide, N- Alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl Methacrylate, glycidyl methacrylate, allyl glycidyl ether, vinyl acetate, styrene, acrylonitrile, one kind of or plural kinds selected from a vinyl alcohol polymer, or a mixture of several polymers
(a2) Acrylic compounds having a functional group copolymerized with the compound (a1), which are hydroxyalkyl acrylates or hydroxyalkyl acrylamides and which have a molecular weight of 100 or more
(a3) a compound having a functional group capable of addition reaction with the compound (a1) and a photopolymerizable carbon-carbon double bond, when the side chain to be subjected to the addition reaction is a carboxyl group or an acid anhydride, glycidyl (meth) acrylate (Meth) acrylic acid when the side chain to be subjected to the addition reaction is an epoxy group, and 2-isocyanatoalkyl (meth) acrylate when the side chain to be subjected to the addition reaction is a hydroxyl group
(b) a photopolymerization initiator
(c) from 0.1 to 15 parts by mass of polyisocyanates relative to 100 parts by mass of the compound (a)
The gel fraction of methyl isobutyl ketone as a cleaning liquid for cleaning the residue of the adhesive used for bonding the support member before ultraviolet irradiation of the pressure-sensitive adhesive layer is 65% or more and 100% or less,
Further, a probe made of SUS304 having a diameter of 3.0 mm at 23 占 폚 before the ultraviolet irradiation of the pressure-sensitive adhesive layer was contacted for 1 second at a speed of 30 mm / min and a contact load of 0.98 N, and then the probe was moved at a speed of 600 mm / (A) to (c) of the pressure-sensitive adhesive layer is adjusted such that the peak value of the probe tack test for measuring the force required to be lifted up at the peeling speed is adjusted to 200 to 600 kPa. . The pressure-sensitive adhesive sheet according to claim 1, wherein the pressure-sensitive adhesive layer further comprises polypropylene oxide,
Wherein the polypropylene oxide is contained in an amount of not less than 0.1 mass% and not more than 2.0 mass% with respect to the total solid content of the pressure-sensitive adhesive layer. The pressure-sensitive adhesive tape for semiconductor processing according to claim 2, wherein the polypropylene oxide has a number average molecular weight of more than 3000 and not more than 10,000. The pressure-sensitive adhesive tape for semiconductor processing according to any one of claims 1 to 3, wherein a parallel light ray transmittance of a ray of light having a wavelength of 1064 nm incident from the base resin film side is 88% or more and less than 100%. The pressure-sensitive adhesive tape for semiconductor processing according to any one of claims 1 to 4, wherein the surface roughness Ra of the base resin film on the side opposite to the pressure-sensitive adhesive layer is 0.1 탆 or more and 0.3 탆 or less. The pressure-sensitive adhesive tape for semiconductor processing according to any one of claims 1 to 5, wherein the surface roughness Ra of the base resin film on the side opposite to the pressure-sensitive adhesive layer is 0.12 탆 or more and 0.19 탆 or less.