KR20160035533A - Up and down device, method and apparatus for forming an EMI-shielding layer using the same - Google Patents

Abstract

Disclosed are a fabrication method of an electromagnetic wave shielding film and a device thereof. The device to form the shielding film comprises: a chamber body; a target module arranged in the chamber body, including at least one magnet unit which generates a magnetic field; and an elevation member which elevates an object subject to be coated, separating the object from a conveying tray when forming a shielding film on at least one of an upper face and sides of the object with respect to sputtering the target module. The device of the present invention is able to prevent peeling in advance, and is able to form a shielding film on an outer circumference of a chip.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an EMI shielding layer forming method and a method of forming an EMI shielding layer using the same,

A method of forming an EMI shielding film and an apparatus therefor are disclosed.

The sputtering apparatus refers to a device for sputtering a target for a deposition process. Korean Patent Laid-Open Publication No. 2012-39856 and the like, there are many sputtering apparatuses, but a majority of the cases in which the lifetime of the target is short and the deposition thickness deviation of the deposited material is severe.

In general, when a deposition process is performed using a sputtering apparatus, the position of the target is fixed, and a shielding film is formed only on a top surface of a chip or a substrate. As a result, a problem of flowing into the chip through the side surface of the chip may occur. Further, when the shielding film is formed on the outer circumferential surface of the chip, there is a problem that the shielding film is damaged due to the peeling phenomenon in the process of separating the chip.

An object of the present invention is to provide a method for forming an EMI shielding film capable of forming a shielding film on the outer circumferential surface of a chip by previously preventing a peeling phenomenon and an apparatus therefor.

According to an aspect of the present invention, there is provided an electromagnetic wave shielding film forming apparatus capable of forming a shielding film on an outer circumferential surface of a chip by previously preventing a peeling phenomenon.

According to the first embodiment, the chamber body; A target module positioned within the chamber body and including at least one magnet unit for generating a target and a magnetic field; And an elevating member for elevating and separating the object to be deposited when forming a shielding film on at least one of the upper surface and the side surface of the object to be deposited by sputtering the target module and separating the object from the transfer tray.

The transfer tray is provided with a plurality of holes, and the elevating member can elevate the deposited material through the holes.

The elevating member includes: a support portion on which a material to be deposited is supported; And a tray for fixing the support portion, wherein the support portion can be arranged corresponding to a plurality of holes formed in the conveyance tray.

The tray is fixed, and the support part can move up and down by moving up and down.

The support part is fixed, and the tray can be moved up and down to lift and raise the deposited material.

The shielding film is formed of a plurality of vapor deposition films on the material to be deposited, and the material can be raised and lowered each time the plurality of vapor deposition films are formed on the material to be deposited.

According to the second embodiment, the supporting member on which the deposited material is supported; And at least one of the supporting portion and the tray is moved up and down so that the deposited material and the transport tray are separated from each other when the shielding film is formed on at least one of the upper surface and the side surfaces of the material to be deposited by a sputtering process The elevating member can be provided.

The elevating member may be fixed to the lower surface of the conveying tray.

The tray is fixed, and the support part can move up and down by moving up and down.

At least one of the supporting portion and the tray does not lift the deposited material during the deposition process of the material to be deposited.

According to a third embodiment, there is provided a method of manufacturing a semiconductor device, comprising: forming a first deposition layer on a top surface and on at least one side of a material deposit with a target material separated from a target module in a first location; Elevating the deposited material on which the first deposition layer is formed; Forming a second evaporation layer on the first evaporation layer of the evaporation material with a target material separated from the target module moved from the first position to the second position to form a shielding film; And a step of raising and lowering the deposited material on which the shielding film is formed.

The shielding film can be formed on the outer circumferential surface of the chip by preventing the peeling phenomenon in advance by providing the electromagnetic wave shielding film forming method and apparatus according to an embodiment of the present invention.

Accordingly, the present invention can minimize process defects and further reduce the defect rate of chips.

1 is a cross-sectional view illustrating a shielding film forming structure for shielding electromagnetic waves according to an embodiment of the present invention;
Fig. 2 is a view for explaining the phenomenon of peeling. Fig.
3 is a view schematically showing an internal configuration of a shielding film forming apparatus according to an embodiment of the present invention.
4 illustrates a delivery tray according to an embodiment of the present invention.
5 is a sectional view of an elevating member according to an embodiment of the present invention;
6 is a view for explaining lifting and lowering of a material to be deposited according to an operation of an elevating member according to an embodiment of the present invention;
7 is a view illustrating a process of forming a shielding film for shielding electromagnetic waves using a shielding film forming apparatus according to an embodiment of the present invention.
FIG. 8 is a view for explaining each deposition process and the separation of a deposited material according to an embodiment of the present invention; FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

The present invention relates to a method and apparatus for forming a shielding film (for example, a metal film) for shielding electromagnetic interference (EMI) using a sputtering process, for example.

Generally, the shielding film is formed only on the upper surface of the chip. In this case, electromagnetic waves may flow into the chip through the side surface of the chip.

Therefore, the shielding film may be formed on the side surface of the chip in order to shield the electromagnetic wave through the side surface of the chip. That is, the shielding film of the present invention can be formed on both the top surface and the side surfaces of the chip. Particularly, the present invention can form the shielding film in consideration of the thickness deviation and the flatness of the top and side surfaces of the chip.

According to the first embodiment, the present invention can prevent the peeling phenomenon by moving the chip up and down during the deposition process. At this time, the shielding films formed on the upper and side surfaces of the chip can be sequentially deposited without being deposited all at once. For example, when the thickness of the shielding film formed on the side surface of the chip is 2 탆, the shielding film can be formed twice in order of 1 탆.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a sectional view showing a shielding film forming structure for shielding electromagnetic waves according to the first embodiment, and FIG. 2 is a view for explaining peeling phenomenon.

As shown in FIG. 1, the shielding film structure 100 includes a material to be deposited 105 and a shielding film 102 formed on the material to be deposited. Here, the material to be deposited 105 may be a semiconductor chip. sure. The deposited material 105 may be variously modified in addition to a semiconductor chip, a substrate of a display panel, a semiconductor substrate, a communication device, and the like. That is, the material to be deposited 105 may be applied without limitation as long as it includes a semiconductor element.

Generally, the shielding film is formed only on the upper surface of the material to be deposited 105. This causes a problem that the electromagnetic wave flows into the inside of the chip through the side surface of the chip.

Therefore, in the first embodiment, as shown in FIG. 1, the shielding film 102 can be formed on at least one of the upper surface and the side surfaces of the material to be deposited 105. Preferably, the shielding film 102 may be formed on both the upper surface and the side surfaces of the deposited material 100.

The shielding film 102 may be formed on the outer circumferential surface of the material to be deposited 105 with a single shielding film and a plurality of shielding films may be sequentially formed along the outer circumferential surface of the material to be deposited 105.

However, in the case of forming the shielding film on the side surface of the chip, after the step of forming the shielding film on the outer circumferential surface of the chip is completed, in the process of separating the chip from the side of the chip, .

Hereinafter, a configuration of a device capable of forming a shielding film on the outer circumferential surface of the chip without peeling will be described with reference to FIG.

FIG. 3 is a view schematically showing the internal structure of the shielding film forming apparatus according to the first embodiment. FIG. 4 is a view showing a transfer tray according to the first embodiment, And FIG. 6 is a view for explaining lifting and lowering of a material to be deposited according to the operation of the lifting member according to the first embodiment.

According to the first embodiment, the shielding film formed on the deposited material 105 can be formed through a sputtering process. Therefore, the shielding film forming apparatus 300 described below may be a sputtering apparatus.

3, the shielding film forming apparatus 300 includes a chamber body 310, a transfer tray 315, an elevating member 320, a mask 325, a target module 330, and a power source unit 335, do.

 Of course, the chamber body 310 may further include a gas inlet, a substrate inlet, and a gas outlet, but this is a well-known configuration and thus will not be described.

The transfer tray 315 is a means for arranging the objects to be deposited and moving the objects to be arranged in the designated direction.

Although not shown in detail in FIG. 3, the transfer tray 315 moves a material to be deposited from the outside of the chamber to the inside of the chamber, and when the target material is deposited on the outer circumferential surface (that is, the upper surface and both surfaces) of the material to be deposited, It is possible to move out of the chamber.

Further, the transfer tray 315 is formed with a plurality of holes as shown in Fig. Here, the material to be deposited 105 may be arranged in each hole formed in the transfer tray 315. The plurality of holes formed in the transfer tray 315 are formed to have a smaller size than the material to be deposited because the transfer tray 315 moves the objects to be deposited while supporting the objects to be deposited.

In FIG. 4, holes formed in the transfer tray 315 are shown as being square. However, the present invention is equally applicable to a case where the objects to be deposited can be raised and lowered through the holes.

The deposited material 105 supported by the conveyance tray 315 can be lifted by the elevating member 320 through the hole and separated from the conveyance tray 315. [

The lifting member 320 is a means for lifting the deposited material in the process of depositing the target material on the outer circumferential surface (i.e., the upper surface and both the surfaces) of the deposited material.

5, the lifting member 320 includes a support 510 and a tray 520 on which the support 510 is fixed to support and lift the article to be deposited 105 supported by the conveying tray 315 ).

The supporting portion 510 is a means for supporting the material to be deposited 105 when the material to be deposited 105 is moved up and down by the lifting member 320. [ The support portions 510 may be arranged corresponding to the holes formed in the conveyance tray 315. [

The supporting portion 510 may be formed to be smaller than the hole formed in the conveyance tray 315 because the supporting portion 510 has to raise or lower the material to be deposited 105 through holes formed in the conveyance tray 315 .

The shielding film formed on the material to be deposited 105 during the deposition process may be formed by a plurality of deposition films. At this time, the lifting member 320 can be lifted and separated from the transport tray 315 each time a deposition film is formed on the material to be deposited 105. In this case, when the deposited material 105 on which the shielding film is formed is separated from the transfer tray 315 after the deposition process is completed, the peeling phenomenon occurs as described above.

Thereby, each time the deposition film is formed on the material to be deposited 105, the material to be deposited 105 can be separated from the transfer tray 315 so that the peeling phenomenon can be prevented in advance.

In addition, the support portion 510 is fixedly arranged on the tray 520. Fig.

According to the first embodiment, only the support part 510 is lifted and lowered while the tray 520 is fixed, and the support part 510 is lifted by supporting the material to be deposited 105 through the hole of the conveying tray 315, The tray 315 can be removed. When the support portion 510 is lowered after a predetermined period of time has elapsed, the deposit 105 may be placed on the transfer tray 315. Since the size of the support portion 510 is smaller than the hole formed in the transfer tray 315 and the material to be deposited 105 is large so that the material to be deposited 105 is not transferred to the transfer tray 315 even if the support portion 510 is lowered, It does not descend through the hole of the plate.

According to the second embodiment, in a state in which the support portion 510 is fixed to the tray 520, the support portion 510 does not move up and down, and the tray 520 itself can be moved up and down.

In this case, since the material supporting portion 510 is fixed to the support tray 520, the material to be deposited can be lifted and lowered through the holes formed in the transfer tray 315 by lifting and lowering the support tray 520 itself.

Accordingly, in one embodiment of the present invention, the process of depositing a target material (evaporation film or shielding film) on the outer circumferential surface of the evaporation material is repeated a plurality of times, and a peeling section is set between the evaporation steps to elevate the elevation member 320 So that the deposited material can be lifted and lowered.

That is, when the thickness of the target material (that is, the shielding film) formed on the outer circumferential surface of the material to be deposited is relatively thin by performing the deposition process separately, the material can be raised and lowered by lifting the lift member 320 to prevent the peeling phenomenon There is an advantage. This can be understood more clearly by the following description.

A mask 325 is arranged between the transfer tray 315 and the target module 330 within the chamber.

The mask 325 serves to form a shielding film 102 or a deposition film on a desired one of the surfaces of the object to be deposited 105 during the deposition process

That is, when the material to be deposited is deposited on the target material (that is, the shielding film) while the material to be deposited is moved in the designated direction through the transfer tray 315, the mask 325 exists on the transfer tray 315, The thickness of the target material (that is, the shielding film) formed on the top and sides of the deposition target can be easily controlled by forming the target material only on a part of the deposition target.

The target module 330 includes a target 331, which is a target material to be deposited, and can function as a cathode. The target 331 includes a material (target material) to be deposited on the deposited material 105, and has a circular shape or the like.

This target module 330 can move within a predetermined range within the chamber. That is, the target module 330 moves from the first position to the second position during the deposition process of the material to be deposited 105, returns to the first position from the second position, and then moves from the first position to the third position, Process can be performed.

For example, the first deposition layer can be formed on the top surface and at least one side surface of the material deposit 105 by sputtering the target module 330 at the first position. After the first deposition layer is formed on the deposit 105, the lift member 320 raises the deposit 105 and then descends after a predetermined time has elapsed.

Subsequently, the second deposition layer may be formed on the first deposition layer by moving the target module 330 from the first position to the second position and sputtering the target module 330 at the second position. After the second deposition film is formed, the lifting member 320 raises the material to be deposited 105, and then descends after a predetermined time has elapsed.

During the deposition process in which the first deposition layer and the second deposition layer are formed, the deposition target 105 can be moved by a predetermined distance in the first direction by the transfer member.

At this time, the material to be deposited 105 may be sequentially moved in the first direction by the transfer member, and may be moved after each deposition process is completed in a predetermined interval.

Thus, when the first deposition process and the second deposition process are completed, the target module 230 returns again from the second position to the first position, and as the target module 230 is sputtered at the first position, A third deposition layer may be formed on the deposition layer. After the third deposition film is formed, the lifting member 320 raises the material to be deposited 105 and then descends after a predetermined time has elapsed.

After the third deposition layer is formed, the target module 330 moves from the first position to the third position, and the fourth deposition layer may be formed on the third deposition layer by sputtering the target module 330 at the third position. After the fourth deposition film is formed, the lifting member 320 raises the material to be deposited 105, and then descends after a predetermined time has elapsed.

As described above, the shielding film may be formed on at least one of the upper surface and the side surfaces of the material to be deposited 105 depending on the position of the target module 330.

Also, although not shown in detail in FIG. 3, the target 331 included in the target module 330 may be rotated within a predetermined range during the sputtering process. The rotational range of the target module 330 may be, for example, from 0 degrees to 360 degrees.

By rotating the target 331 within a predetermined range during the sputtering process, the target 331 can be evenly sputtered, and consequently, the life of the target 331 can be prolonged.

The target module 330 includes a backing plate 332 and a magnet 333 as shown in FIG.

The backing plate 332 serves to support the target 331 and is made of metal. The backing plate 332 may have a circular or oval shape. Power is directly or indirectly applied to the backing plate 332 from the power supply unit 335, so that the backing plate 332 can function as a cathode.

The target 331 includes a material to be deposited as a material to be deposited (hereinafter, referred to as a target material). Further, the target 331 has a circular shape or the like, and may be formed on the outer peripheral surface of the backing plate.

The magnet portion 333 is positioned on the opposite side of the target 331 with respect to the backing plate 332. In addition, the magnet unit 333 may include at least one magnet unit 333-1. Here, the magnet unit 333-1 may have NSN polarity. That is, the magnet unit 333-1 is an element for generating a magnetic field, and may be a permanent magnet or an electromagnet. Further, the magnet unit 333-1 may be arranged to face the conveyance tray 315. [

Since the magnet unit 333-1 generates a magnetic field, it is possible to determine the range of deposition in which the ions due to the glow discharge are concentrated in the magnetic field region and target fluorine classified from the target 331 spreads.

3, the magnet unit 333 includes one magnet unit 333-1. However, it is needless to say that the magnet unit 333 may include a plurality of magnet units.

Further, the magnet portion 333 may be rotated by itself or may swing within a certain range.

According to the first embodiment, since the deposition material (i.e., shielding film) is formed on both the upper surface and the side surface of the material to be deposited, the magnet portion 333 can be rotated 360 degrees so as to facilitate side deposition.

In addition, the position of the magnet unit 333 can be varied according to the position of the target module 330.

The power supply unit 335 functions to provide power for operating the internal configuration of the shielding film forming apparatus 300.

FIG. 7 is a view illustrating a process of forming a shielding film for shielding electromagnetic waves using the shielding film forming apparatus according to the first embodiment. FIG. 8 is a cross- Fig.

In order to facilitate understanding and explanation, it is assumed that a shielding film is formed on the upper surface of the evaporation material by 4 mu m and a shielding film is formed on the side surface by 2 mu m, respectively.

It is also assumed that a shielding film is formed on at least one of the upper surface and the side surface of the material to be deposited with a thickness of 1 탆 in the deposition step.

In step 710, the shielding film forming apparatus 300 moves the transfer tray 315 into the chamber with the deposited material 105 supported.

Next, in step 715, the shielding film forming apparatus 300 turns the inside of the chamber into a vacuum state and injects the sputtering gas into the chamber. Here, the sputtering gas may be, for example, argon (Ar) gas, which is an inert gas. The sputtering gas is ionized by a glow discharge caused by a potential difference between the cathode and the anode. That is, the sputtering gas is changed into a plasma state.

In step 720, the shielding film forming apparatus 300 positions the target module 330 in the first position, generates a magnetic field to concentrate the ions, and sputtering the target module 330 in the first position, A first deposition layer is formed on the upper surface and at least one side of the deposition target 105 with a separated target material (first deposition process).

The shielding film forming apparatus 300 rotates the target so that the target is uniformly sputtered during the deposition process. That is, the ions generated by the ionization collide with the surface of the target, thereby causing the target material (i.e., deposition material) separated from the target to be deposited into the deposition material. At this time, due to the magnetic field generated by the magnet unit, most of the ions are concentrated in the deposition range, collide with the target, and the corresponding portion is sputtered.

Accordingly, when the shielding film forming apparatus 200 rotates the target, the target can be uniformly sputtered, and as a result, the whole target is uniformly sputtered during the deposition process, thereby extending the life of the target.

Further, when the lifetime of the target becomes longer, the cost of the shielding film forming apparatus can be reduced as a result.

The magnet section also rotates or swings while the target rotates.

The reason why the magnet 233 is rotated or swung with the rotation of the target 231 is that the plasma region is wider than the magnet 233 does not rotate or swing while the target 231 rotates.

That is, by rotating or swinging the magnet unit 233 together with the rotation of the target 231, the angle of incidence of the target material (deposition material) can be advantageously widened. In addition, there is an advantage that the deviation of the deposition thickness of the shielding film deposited on the top and sides of the deposition target can be reduced by not rotating the swinging magnet 233 together with the target 231 to fix the angle of incidence of the target material .

The deposited material 105 can be moved in the first direction while the target module 330 is sputtered at the first position.

Alternatively, the shielding film forming apparatus 300 may be configured such that when the deposition process of the material to be deposited 105 is completed in accordance with the sputtering process of the target module 330 at the first position, the transfer material on which the material to be deposited 105 is placed is moved in the first direction Quot ;. < / RTI >

1 mu m of deposition material may be formed on the upper surface and the right surface of the material to be deposited 105 by the above-described first deposition process.

During such a deposition process, the target 331 may continue to rotate and the magnet portion 333 may also swing at a specified angle while the target 331 is rotating.

During the first deposition process, as shown in 810 of FIG. 8, the lifting member 320 is fixed in a state of being neither raised nor lowered.

After the first deposition process is completed, the shielding film forming apparatus 300 raises the elevating member 320 to separate the conveying tray 315 from the material to be deposited, and then descends the elevating member 320 again Separation process).

8, the shielding film forming apparatus 300 raises the lifting member 320 during the peeling prevention period after the first deposition process is completed, separates the deposited material from the conveying tray 315, And then the elevating member 320 can be lowered. The process of raising and lowering the elevating member 320 to separate the conveying tray 315 from the material to be deposited is referred to as a separating process.

During the separation process, the conveying member may not move the material to be deposited 105 and may not move.

The shielding film forming apparatus 300 moves the target module 330 from the first position to the second position after the first separation process is completed and sputtering the target module 330 at the second position, Thereby forming a second deposition film (second deposition process).

When the first deposition layer is formed according to the first deposition process, the target module 330 is moved from the first position to the second position to form a second deposition layer on the first deposition layer. Here, the second position may be a designated position 45 degrees downward from the first position.

As the target module 330 moves from the first position to the second position, the magnet portion 333 can rotate to adjust the deposition range of the target material.

As a result of the second deposition process, a deposition film of 2 탆 is formed on the upper surface of the deposited material 105, and a deposition film of 1 탆 is formed on the left side and the right side.

During the second deposition process, the transport tray 315 on which the deposit 105 is placed can be moved by a predetermined interval in the first direction.

Of course, as with the first deposition process, once the second deposition process is completed, the transfer member on which the material to be deposited 105 is placed can be moved by a designated section in the first direction.

820 of FIG. 8 shows the moving state of the material to be deposited in the second-step deposition process. As shown in 820 of FIG. 8, during each deposition process, the lifting member 320 does not raise the deposited material.

In step 735, the shielding film forming apparatus 300 separates the material to be deposited from the transfer tray 315 by raising the elevation member when the second deposition process is completed, and then performs the separation process by descending the elevation member 320 again 2 separation process) (see 825 in FIG. 8). In FIG. 8, although the deposition process and the separation process are respectively shown in two stages, the four-stage deposition process and the separation process may be repeated in an embodiment of the present invention.

After the second separation process is completed, the shielding film forming apparatus 300 returns the target module 330 from the second position to the first position in step 740, and sputtering the target module 330 in the first position, And a third vapor deposition film is formed on the vapor deposition film (third vapor deposition process).

In the third deposition process, the conveying member on which the material to be deposited 105 is placed can move the object to be deposited 105 in a second direction opposite to the first direction by a designated interval. Similarly, after the third deposition process is completed, the transfer member on which the deposition target 105 is placed may move the target material 105 in a second direction opposite to the first direction by a predetermined interval.

Also, as the target module 330 moves from the second position to the first position, the magnet portion 333 may also be rotated by a specified interval to adjust the deposition range of the material to be deposited 105.

According to the third deposition process, a deposition film having a thickness of 1 mu m may be further formed on the upper surface and the right side surface of the material to be deposited 105, respectively. As a result, a deposition film of 3 mu m is formed on the upper surface of the deposited material, a deposition film of 1 mu m is formed on the left side, and a deposition film of 2 mu m is formed on the right side.

After the third deposition process is completed, the shielding film forming apparatus 300 raises the elevating member to separate the conveying tray 315 from the material to be deposited and then separates the elevating member 320 again 3 separation process).

When the third separation process is completed, the shielding film forming apparatus 300 moves the target module 330 from the first position to the third position in step 750 and sputtering the target module 330 in the third position, (Fourth deposition step).

Thus, 1 mu m of deposition material may be further formed on the top and left surfaces of the material to be deposited.

As a result, a deposition material of 4 탆 is formed on the upper surface of the deposited material, and a deposition material of 2 탆 is formed on the left and right surfaces, respectively.

After the fourth deposition process is completed, the shielding film forming apparatus 300 raises the elevating member 320 to separate the conveying tray 315 from the material to be deposited, and then descends the elevating member 320 again fair).

As described above, the position of the target module is changed, the magnet part is rotated, the deposited material is moved in the scan mode, the shielding film is formed in a stepwise manner on the deposited material, and the deposited film is separated from the transfer tray 315, There is an advantage that the peeling phenomenon can be prevented in advance when the deposited material is separated after completion.

Further, the thickness of the shielding film formed on the side of the evaporated film can be precisely controlled by implementing a part of the magnet portion 333 in a sharp shape.

Meanwhile, the electromagnetic wave shielding film forming method according to an embodiment of the present invention may be implemented in a form of a program command that can be executed through a variety of means for electronically processing information, and may be recorded in a storage medium. The storage medium may include program instructions, data files, data structures, and the like, alone or in combination.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It will be understood that the invention may be varied and varied without departing from the scope of the invention.

300: Shielding film forming device
310: chamber body
315: Feed tray
320:
325: Mask
330: target module
335:

Claims (11)

Chamber body;
A target module positioned within the chamber body and including at least one magnet unit for generating a target and a magnetic field; And
And an elevating member for separating the deposited material from the transfer tray when the deposited material is formed on at least one of the upper surface and the side surfaces of the deposited material by sputtering the target module when forming the shielding film. The method according to claim 1,
The transfer tray has a plurality of holes,
Wherein the lifting member lifts and deposits the material to be deposited through the hole. The method according to claim 1,
The elevating member
A support portion on which the deposited material is supported; And
And a tray for fixing the support portion,
Wherein the support portion is arranged corresponding to a plurality of holes formed in the conveyance tray. The method of claim 3,
Wherein the tray is fixed, and the support part elevates and lifts the material to be deposited. The method of claim 3,
Wherein the support portion is fixed, and the tray is moved up and down to lift and lower the material to be deposited. The method according to claim 1,
Wherein the shielding film is formed of a plurality of vapor deposition films on the deposited material,
Wherein the elevating member elevates the deposited material each time the plurality of evaporated films are formed on the deposited material. A support portion on which the deposited material is supported; And
And a tray for fixing the support portion,
Wherein at least one of the supporting portion and the tray elevates and descends so that the material to be deposited and the transfer tray are separated when the shielding film is formed on at least one of the upper surface and side surfaces of the material to be deposited by the sputtering process. 8. The method of claim 7,
And the elevating member is fixed to the lower surface of the conveyance tray. 8. The method of claim 7,
Wherein the tray is fixed, and the supporting part lifts up and down the material to be deposited. 8. The method of claim 7,
Wherein at least one of the support portion and the tray does not lift the material to be deposited during the deposition process of the material to be deposited. Forming a first deposition layer on a top surface and at least one side of a deposition material with a target material separated from a target module at a first location;
Elevating the deposited material on which the first deposition layer is formed;
Forming a second evaporation layer on the first evaporation layer of the evaporation material with a target material separated from the target module moved from the first position to the second position to form a shielding film; And
And raising and lowering the evaporation material on which the shielding film is formed.

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