KR20160029996A - Liquid crystal display dvice and method of manufacturing the same - Google Patents

Abstract

The liquid crystal display device of the present invention is directed to a liquid crystal display device capable of improving a charging property and uniformity and preventing a light-leakage phenomenon. The liquid crystal display device is arranged to be opposite to a thin film transistor array by interposing a liquid crystal layer therebetween, and comprises a color filter array including a black matrix and color filters. The thin film transistor array is formed in each of a plurality of gate lines and a plurality of data lines arranged to cross each other on a substrate, a plurality of thin film transistors formed in each of the crossed portions of a plurality of gate lines and data lines, and pixel domains defined by crossing a plurality of gate lines and data lines, and comprises a plurality of pixel electrodes in contact with each of a plurality of thin film transistors at an interval of a first protective film, and a common electrode arranged to overlap with the plurality of pixel electrodes at an interval of a second protective film. The first protective film comprises a concave portion formed in an area corresponding to the pixel domain and a convex portion corresponding to the black matrix. The second protective film comprises a plane portion and a projection part alternately arranged in the area corresponding to the concave portion of the first protective film. In addition, the common electrode is arranged in the plane portion of the second protective film.

Description

TECHNICAL FIELD [0001] The present invention relates to a liquid crystal display (LCD)

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method of manufacturing the same, and more particularly, to a liquid crystal display device and a method of manufacturing the same which can improve the transmissivity, improve the capacitance of a storage capacitor and reduce the number of mask processes.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. As a result, it has rapidly developed into a flat panel display unit (FPD) that can replace a bulky cathode ray tube (CRT) with a thin, light and large area. The flat panel display includes a liquid crystal display (LCD), a plasma display panel (PDP), an organic light emitting display (OLED), a field emission display : FED), and electrophoretic display (ED) display devices have been developed and utilized.

Of these, liquid crystal display devices are widely used in recent years because they have excellent image quality, light weight, thinness, and low power. A liquid crystal display device is an apparatus that displays an image by controlling the light transmittance of a liquid crystal having dielectric anisotropy using an electric field.

Hereinafter, a conventional liquid crystal display device will be described with reference to FIGS. 1 to 3. FIG. FIG. 1 is a perspective view schematically showing a conventional liquid crystal display, FIG. 2 is a plan view showing one pixel region of the thin film transistor array of FIG. 1, and FIG. 3 is a cross-sectional view taken along line I-I ' Fig.

Referring to FIG. 1, a liquid crystal display includes a thin film transistor array (TFTA) and a liquid crystal display panel (LCP) having a color filter array (CFA) formed with a liquid crystal layer (not shown) interposed therebetween.

The thin film transistor array TFTA includes a plurality of gate lines G1 and G2 formed on a first substrate SUB1 in a first direction (for example, x direction), a plurality of gate lines G1, The data lines D1 and D2 formed to be parallel to each other in the second direction (e.g., the y direction) so as to intersect with the gate lines G1 and G2, the gate lines G1 and G2 and the data lines D1 and D2, A plurality of pixel electrodes Px for charging a data voltage to the liquid crystal cells, and common electrodes (not shown) arranged to face the plurality of pixel electrodes Px (Not shown).

The color filter array CFA includes a black matrix and a color filter (not shown) formed on the second substrate SUB2. Polarizers POL1 and POL2 are attached to the outer surfaces of the first substrate SUB1 and the second substrate SUB2 of the liquid crystal display panel LCP and the polarizers POL1 and POL2 are attached to the outer surfaces of the first and second substrates SUB1 and SUB2 And an orientation film (not shown) for setting the pretilt angle of the liquid crystal is formed on the inner surface. A column spacer for maintaining a cell gap of the liquid crystal cell may be formed between the color filter array CFA and the thin film transistor array TFTA of the liquid crystal display panel LCP.

2 and 3, a conventional liquid crystal display includes a liquid crystal display panel having a thin film transistor array (TFTA) and a color filter array (CFA) formed with a liquid crystal layer LC interposed therebetween.

The thin film transistor array TFTA includes a plurality of gate lines G1 and G2 formed on a first substrate SUB1 in a first direction (for example, x direction), a plurality of gate lines G1, The data lines D1 and D2 formed to be parallel to each other in the second direction (e.g., the y direction) so as to intersect with the gate lines G1 and G2, the gate lines G1 and G2 and the data lines D1 and D2, A plurality of pixel electrodes Px for charging a data voltage to liquid crystal cells, and common electrodes (not shown) arranged to face the plurality of pixel electrodes Px COM).

The color filter array CFA includes a black matrix BM and a color filter CF formed on the second substrate SUB2. A polarizing plate (not shown) is attached to the outer surfaces of the first substrate SUB1 and the second substrate SUB2 of the liquid crystal display panel and the first and second substrates SUB1 and SUB2 in contact with the liquid crystal layer LC And an orientation film (not shown) for setting the pretilt angle of the liquid crystal is formed on the inner surface. A column spacer CS for maintaining a cell gap of the liquid crystal cell is formed between the color filter array CFA and the thin film transistor array TFTA of the liquid crystal display panel.

The thin film transistor T formed in the thin film transistor array TFTA includes a gate electrode G, a source electrode S and a drain electrode D.

A gate electrode G is formed on the first substrate SUB1 and extends from the gate lines G1 and G2. The gate lines G1 and G2 and the gate electrode G are covered with a gate insulating layer GI. A semiconductor active layer (A) is formed on the gate insulating film (GI) so as to overlap the gate electrode (G).

The source electrode (S) and the drain electrode (D) are formed separately so as to face each other on the semiconductor active layer (A). The source electrode S is connected to the data lines D1 and D2 and the drain electrode D is connected to the pixel electrode Px.

The pixel electrode Px is disposed in an area defined by the intersection of the gate lines Gl1 and G2 and the data lines DL1 and D2. The pixel electrode Px is formed on the first insulating film INS covering the thin film transistor T and the second insulating film INS2 for planarization. The pixel electrode Px is connected to the drain electrode D of the thin film transistor T through the contact hole CH passing through the first and second insulating films INS1 and INS2.

The common electrode COM is formed on the passivation film PAS that covers the pixel electrode Px and overlaps the pixel electrode Px. The common electrode COM is formed to have a plurality of slits SL so as to form a horizontal electric field in the liquid crystal of the liquid crystal layer together with the pixel electrode Px.

However, the above-described conventional liquid crystal display device has a problem that the first mask process for forming the gate lines G1 and G2 and the gate electrode G, the w second mask process for forming the semiconductor active layer A, A third mask process for forming the source and drain electrodes D1 and D2 and the source and drain electrodes S and D and a fourth mask process for forming contact holes in the first and second insulating layers INS1 and INS2 A fifth mask process for forming the pixel electrode Px, and a sixth mask process for forming the common electrode COM are performed through at least six to seven mask processes. Therefore, there is a need to reduce the masking process, which is costly and time-consuming to produce the product.

In addition, due to the recent tendency to demand a high pixel-per-inch (PPI) according to the pursuit of high quality of a liquid crystal display device, the load of signal lines of the liquid crystal display device increases and the storage capacitance becomes small, There is a demand for a solution against degradation.

In the conventional liquid crystal display device, a column spacer CS is disposed to maintain a cell gap between the color filter array CFA and the thin film transistor array TFTA. In the conventional liquid crystal display device, an external force is applied to the color filter array CFA of the liquid crystal display device The column spacer CS is shifted due to the pressing and bending of the panel or the like as shown in FIG. 4, so that the alignment of the liquid crystal located around the column spacer CS is destroyed to cause light leakage there was.

Disclosure of the Invention The present invention has been made to solve the above problems and it is an object of the present invention to provide a liquid crystal display device capable of reducing the number of mask processes and improving the charging characteristics and uniformity by improving the capacitance of the storage capacitor, And a method for producing the same.

The liquid crystal display device of the present invention for achieving the above object is provided with a color filter array arranged opposite to the thin film transistor array with a liquid crystal layer therebetween and including a black matrix and color filters. The thin film transistor array includes a plurality of gate lines arranged to cross each other on a substrate, a plurality of thin film transistors formed at intersections of the plurality of data lines, a plurality of gate lines and data lines, a plurality of gate lines, A plurality of pixel electrodes respectively formed in pixel regions defined by intersections of data lines and respectively connected to the plurality of thin film transistors with a first protective film interposed therebetween; And a common electrode arranged to overlap the pixel electrodes. The first protective film has a concave portion formed in a region corresponding to the pixel region and a convex portion corresponding to the black matrix, and the second protective film has a flat portion alternately arranged in an area corresponding to the concave portion of the first protective film, And has protrusions. Further, the common electrode is disposed in the flat portion of the second protective film.

The color filter array of the liquid crystal display device includes a thin film transistor array and a plurality of column spacers for maintaining a cell gap, and a plurality of column spacers are arranged in a region corresponding to both concave portions around the convex portions of the first protective film, As shown in Fig.

Another liquid crystal display device of the present invention for achieving the above object is provided with a color filter array arranged opposite to the thin film transistor array with a liquid crystal layer therebetween, and including a black matrix and color filters. The thin film transistor array includes a plurality of gate lines arranged to cross each other on a substrate, a plurality of thin film transistors formed at intersections of the plurality of data lines, a plurality of gate lines and data lines, A common electrode formed on the first protective film and a plurality of thin film transistors connected to the plurality of thin film transistors through the contact holes passing through the first and second protective films, Of pixel electrodes. The first protective film has a concave portion formed in a region corresponding to the pixel region, and the second protective film has a flat portion and a protruding portion which are alternately arranged in a region corresponding to the concave portion of the first protective film. Further, each of the plurality of pixel electrodes is disposed in the flat portion of the second protective film.

The color filter array of such a liquid crystal display device includes a thin film transistor array and a plurality of column spacers for maintaining a cell gap, and a plurality of column spacers are alternately arranged at positions corresponding to convex portions and concave portions of the first protective film.

In addition, the method for manufacturing a liquid crystal display of the present invention for achieving the above object includes first through fourth mask processes. The first mask process is a process of depositing a first conductive metal material on a substrate and then forming a gate electrode. The second mask process includes the steps of forming a gate insulating film covering the gate electrode, sequentially applying a semiconductor material and a second conductive metal material on the gate insulating film, and a second mask process using a first halftone mask, Forming a data line, a source electrode, and a drain electrode. The third mask process may include applying an organic insulating material on the gate insulating layer on which the semiconductor active layer, the data line, the source electrode, and the drain electrode are formed, exposing the step and drain electrodes by a third mask process using the second halftone mask, Forming a first protective film having a first contact hole, applying a first transparent conductive material on the first protective film, and forming a pixel electrode in a pixel region by a ashing process using a photoresist. In the fourth mask process, an inorganic insulating material is coated on the first protective film on which the pixel electrode is formed, and a fourth mask process using a third halftone mask forms a second protective film having a flat portion and a protruding portion in the pixel region Applying a second transparent conductive material on top of the first protective film, and forming a common electrode in the flat portion of the second protective film by a lift process.

Another method of manufacturing a liquid crystal display device according to the present invention for achieving the above object includes first through fourth mask processes. The first mask process is a process of depositing a first conductive metal material on a substrate and then forming a gate electrode. The second mask process includes the steps of forming a gate insulating film covering the gate electrode, sequentially applying a semiconductor material and a second conductive metal material on the gate insulating film, and a second mask process using a first halftone mask, Forming a data line, a source electrode, and a drain electrode. The third mask process is a process of applying an organic insulating material on a gate insulating film on which a semiconductor active layer, a data line, a source electrode, and a drain electrode are formed, a step of exposing the step and drain electrodes by a third mask process using a second halftone mask, Forming a first protective film having one contact hole, applying a first transparent conductive material on the first protective film, and forming a common electrode by a ashing process using a photoresist. In addition, the fourth mask process may include a step of applying an inorganic insulating material on the first protective film on which the common electrode is formed, a fourth mask process using the third halftone mask, a step of forming a flat portion and a protrusion in the pixel region, Forming a second protective film having an overlapping second contact hole, applying a second transparent conductive material on the second protective film, and forming a pixel electrode in the flat portion of the second protective film by a lift-off process .

According to the liquid crystal display device of the present invention, since the capacitance between the common electrode and the pixel electrode can be reduced to improve the capacitance of the storage capacitor, it is possible to improve the charging characteristic and the uniformity of the liquid crystal display device.

In addition, since the column spacer is alternately arranged in the zigzag form in the region corresponding to the concave portion and the convex portion of the first protective film, the destruction of the liquid crystal alignment due to the shift of the column spacer can be prevented and the light leakage can be prevented .

1 is a perspective view schematically showing a conventional liquid crystal display device,
FIG. 2 is a plan view showing one pixel region of the thin film transistor array of FIG. 1;
3 is a cross-sectional view taken along the line I-I 'shown in FIG. 2,
4 is a view for explaining the principle that the column spacer is shifted by the external force applied to the liquid crystal display device to cause light leakage
5 is a plan view showing one pixel region of the thin film transistor array of the liquid crystal display device according to the first embodiment of the present invention,
6 is a cross-sectional view taken along line II-II 'of FIG. 5,
FIG. 7A is a sectional view showing a liquid crystal display device according to the first embodiment of the present invention,
7B is a schematic view of the position of a column spacer of a liquid crystal display according to the first embodiment of the present invention,
8A is a plan view showing a first mask process of the liquid crystal display device according to the first embodiment of the present invention,
8B is a cross-sectional view showing a first mask process of the liquid crystal display device according to the first embodiment of the present invention,
9A is a plan view showing a second mask process of the liquid crystal display device according to the first embodiment of the present invention,
9B and 9C are cross-sectional views showing a second mask process of the liquid crystal display device according to the first embodiment of the present invention,
10A is a plan view showing a third mask process of the liquid crystal display device according to the first embodiment of the present invention,
10B to 10D are cross-sectional views showing a third mask process of the liquid crystal display device according to the first embodiment of the present invention,
11A is a plan view showing a fourth mask process of the liquid crystal display device according to the first embodiment of the present invention,
11B to 11E are cross-sectional views illustrating a fourth mask process of the liquid crystal display device according to the first embodiment of the present invention,
12 is a plan view showing one pixel region of a thin film transistor array of a liquid crystal display according to a second embodiment of the present invention,
13 is a cross-sectional view taken along line III-III 'of FIG. 12,
14A is a cross-sectional view showing a liquid crystal display device according to a second embodiment of the present invention,
14B schematically shows the position of the column spacer of the liquid crystal display according to the second embodiment of the present invention,
15A is a plan view showing a first mask process of the liquid crystal display device according to the second embodiment of the present invention,
FIG. 15B is a cross-sectional view showing a first mask process of the liquid crystal display device according to the second embodiment of the present invention,
16A is a plan view showing a second mask process of the liquid crystal display device according to the second embodiment of the present invention,
17B and 17C are cross-sectional views showing a second mask process of the liquid crystal display device according to the first embodiment of the present invention,
10A is a plan view showing a third mask process of the liquid crystal display device according to the first embodiment of the present invention,
10B to 10D are cross-sectional views showing a third mask process of the liquid crystal display device according to the first embodiment of the present invention,
11A is a plan view showing a fourth mask process of the liquid crystal display device according to the first embodiment of the present invention,
11B to 11E are cross-sectional views illustrating a fourth mask process of the liquid crystal display device according to the first embodiment of the present invention,
FIG. 19A is a view showing a region of a black matrix in a conventional liquid crystal display device, FIG. 19B is a view showing a region of a black matrix in the liquid crystal display according to the first and second embodiments of the present invention,
20 is a view for comparing the aperture ratio obtained by the conventional liquid crystal display device with the aperture ratio obtained by the liquid crystal display device according to the first and second embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals refer to like elements throughout the specification. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description, a detailed description of known technologies or configurations related to the present invention will be omitted when it is determined that the gist of the present invention may be unnecessarily obscured.

The liquid crystal display according to the first embodiment of the present invention will be described with reference to FIGS. 5 and 6. FIG. FIG. 5 is a plan view showing one pixel region of the thin film transistor array of the liquid crystal display according to the first embodiment of the present invention, and FIG. 6 is a sectional view taken along line II-II 'of FIG.

5 and 6, a thin film transistor array (TFTA) of a liquid crystal display according to a first embodiment of the present invention includes a first substrate SUB1, a first substrate SUB1, And a thin film transistor T formed in each pixel region defined by the intersection of the gate line GL and the data line DL and the gate line GL and the data line DL.

The thin film transistor T includes a gate electrode G extending from the gate line GL, a source electrode S extending from the data line DL, a drain electrode D opposed to the source electrode S, And a semiconductor active layer A which overlaps the gate electrode G on the insulating film GI and forms a channel between the source electrode S and the drain electrode D.

The thin film transistor array of the liquid crystal display according to the first embodiment of the present invention includes a first protective film PAS1 covering the thin film transistor T, a pixel electrode Px formed on the first protective film PAS1, And a common electrode COM arranged to overlap the pixel electrode Px on the second protective film PAS2 covering the pixel electrode Px.

The first protective film PAS1 may include an insulating film and a planarizing film. In the liquid crystal display device according to the first embodiment of the present invention, a single protective film is described as an example. The first protective film PAS1 has a contact hole CH exposing the drain electrode D of the thin film transistor T. [ The first protective film PAS1 is formed so that a first region corresponding to the black matrix BM of the color filter array and a second region corresponding to the pixel region have step differences. That is, the first region of the first protective film PAS1 is formed to be high and the second region to be low, so that the first region is formed as a convex portion and the second region is formed as a concave portion.

The pixel electrode Px is formed in the pixel region defined by the intersection of the gate line GL and the data line DL. The pixel electrode Px is connected to the drain electrode D exposed through the contact hole CH passing through the first protective film PAS1. The pixel electrode Px is supplied with a data voltage supplied from the data line DL through the thin film transistor T. [

The second protective film PAS2 is formed to cover the pixel electrode Px and includes a flat portion FP and a flat portion FP thereof in a pixel region defined by the intersection of the gate line GL and the data line DL. And at least two protruding portions (EP) protruding from the upper portion at regular intervals.

The common electrode COM is formed on the second protective film PAS2 except for the protrusion EP. That is, the common electrode COM is formed so as to expose the protrusion EP, and is formed to be positioned below the upper end of the protrusion EP. The common electrode COM is connected to a common line CL arranged in parallel with the gate line GL. The common electrode COM is supplied with a reference voltage (or a common voltage) for driving the liquid crystal through the common line CL.

Since the common electrode COM is not formed on the protruding portion EP of the second protective film PAS2 as described above, a fringe field is formed between the pixel electrode Px and the pixel electrode Px overlapping over the second protective film PAS2 . Therefore, the liquid crystal molecules arranged in the horizontal direction between the thin film transistor array TYFTA and the color filter array CFA are rotated by dielectric anisotropy. Accordingly, the transmittance of light passing through the pixel region is changed according to the degree of rotation of the liquid crystal molecules, thereby realizing the gradation.

According to the liquid crystal display device according to the first embodiment of the present invention, since the common electrode COM is formed on the flat portion FP between the protruding portions EP of the second protective film PAS2, The distance between the pixel electrodes Px becomes close to each other. Since the electrostatic capacitance is inversely proportional to the distance between the two electrodes, the electrostatic capacitance of the storage capacitor formed of the common electrode COM and the pixel electrode Px increases. Therefore, the effect of improving the charging characteristic and the uniformity of the liquid crystal display device can be obtained.

The first protective film PAS1 has a stepped portion by a first region corresponding to the black matrix BM and a second region corresponding to the pixel region and the column spacers adjacent to each other are arranged on the upper side of the gate line overlapping with the black matrix, Even if an external force is applied to the liquid crystal display device and the column spacer is shifted, the influence of the mutual shift can be compensated for by the different arrangement of the adjacent column spacers, thereby preventing the alignment of the liquid crystal located around the column spacer from being destroyed So that it is possible to prevent the occurrence of light leakage.

Next, the prevention of light leakage induced by the liquid crystal display according to the first embodiment of the present invention will be described in more detail with reference to FIGS. 7A and 7B. FIG. 7A is a cross-sectional view illustrating a liquid crystal display device according to a first embodiment of the present invention, and FIG. 7B is a view schematically showing a position of a column spacer of a liquid crystal display device according to the first embodiment of the present invention.

7A and 7B, a liquid crystal display according to the first embodiment of the present invention includes a color filter array CFA (color filter array) facing the thin film transistor array TFTA shown in FIG. 6 with a liquid crystal layer LC therebetween, ).

The color filter array CFA includes a color filter CF formed on the second substrate SUB2 and a black matrix BM partitioning the color filter CF. The color filter array (CFA) also includes a thin film transistor array (TFTA) and a column spacer (CS) for maintaining a cell gap of the liquid crystal cell.

The column spacer CS is disposed corresponding to the convex portion of the first protective film PAS1 corresponding to the black matrix BM as shown in Figs. 7A and 7B. More specifically, the column spacer is disposed in a region corresponding to the black matrix BM and the gain line GL. In the liquid crystal display device according to the first embodiment of the present invention, the first spacers CS among the column spacers adjacent to each other are arranged to correspond to the upper side in the width direction of the gate line GL, And is arranged to correspond to the lower side in the width direction. According to this configuration, even if the external force is applied to the liquid crystal display device and the first and second column spacers CS and CS 'are shifted to one side, the first and second column spacers CS and CS' One of the two (for example, the first column spacer CS) is present at a position corresponding to the convex portion of the first protective film PAS1. Therefore, even if the other column spacer (for example, the second column spacer CS ') is shifted to the pixel region, the gap with the common electrode COM can be maintained by the first column spacer CS . Accordingly, the second column spacer CS ', which is shifted toward the pixel region, comes into contact with the common electrode COM, thereby destroying the alignment of the liquid crystal located around the column spacer CS, thereby preventing the occurrence of light leakage.

Next, a method of manufacturing a liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIGS. 8A to 11E. Hereinafter, for convenience of description, only one pixel region will be described. One pixel region is formed in a pair of upper and lower gate lines and a pair of left and right data lines. However, in order to simplify the description, only one gate line and two data lines are shown in the following description of the manufacturing method.

First, with reference to FIGS. 8A and 8B, a first mask process for forming the gate line and the gate electrode of the liquid crystal display device according to the first embodiment of the present invention and the gate line including the common line will be described do. FIG. 8A is a plan view showing a first mask process of the liquid crystal display according to the first embodiment of the present invention, FIG. 8B is a sectional view showing a first mask process of the liquid crystal display according to the first embodiment of the present invention to be.

Referring to FIGS. 8A and 8B, a first conductive metal material is deposited on a transparent first substrate SUB1, and then a first photoresist is coated on the entire surface. Then, a first photoresist pattern is formed by performing a photolithography process using the first photomask. Then, the gate metal is etched using the first photoresist pattern as a mask, the gate line GL arranged in the first direction (for example, the lateral direction) by removing the first photoresist pattern, A gate electrode GE extending to the region, and a common line CL arranged in parallel with the gate line GL are formed.

The first conductive metal includes a low-resistance metal material such as copper (Cu) or aluminum (Al) and a metal material resistant to corrosion such as titanium (Ti), nickel (Ni), or molybdenum (Mo). As another example, it may have a structure in which a copper layer and a titanium-molybdenum alloy layer are laminated, a structure in which a molybdenum layer and an aluminum-neodymium alloy layer are laminated, or a double layer structure in which a copper layer and a molybdenum layer are laminated. As another example, it may have a triple-layer structure in which a nickel layer, a copper layer, and a titanium-molybdenum alloy layer are laminated.

Next, a data line DL, a semiconductor active layer A, a source electrode S, and a drain electrode D of the liquid crystal display device according to the first embodiment of the present invention are included with reference to FIGS. 9A to 9C And a second mask process for forming the second conductive metal layer will be described. FIG. 9A is a plan view showing a second mask process of the liquid crystal display according to the first embodiment of the present invention, and FIGS. 9B and 9C are views showing a second mask process of the liquid crystal display according to the first embodiment of the present invention Fig.

9A and 9B, an insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx) is applied to the entire surface of a first substrate SUB1 on which a first conductive metal layer is formed to form a gate insulating film GI . Next, as shown in FIGS. 16A and 16C, a semiconductor material and a second conductive metal material are sequentially applied on the entire surface of the gate insulating film GI, and then the semiconductor active layers A, The semiconductor active layer and the second conductive metal layer including the data line DL, the source electrode S, and the drain electrode D are formed.

More specifically, the second mask process is performed using a halftone mask. For this purpose, the semiconductor material sequentially deposited on the gate insulating film (GI) and the second photoresist are coated on the second conductive metal material. As the second conductive metal material, the same material as the first conductive metal material is used. Then, a photolithography process using a halftone mask (second photomask) is performed to form a second photoresist pattern. Then, the semiconductor material and the source / drain metal are etched using the second photoresist pattern as a mask, and the second photoresist pattern is removed to remove the second photoresist pattern in a second direction (for example, A source electrode S extending from the data line DL to the pixel region and a drain electrode D disposed opposite to the source electrode S with a predetermined gap therebetween, And a semiconductor active layer (A) overlapping the second conductive metal pattern are formed on the second conductive metal pattern. The thin film transistor T is formed by the gate electrode G, the semiconductor active layer A, the source electrode S and the drain electrode D formed by the first mask process and the second mask process.

Next, a third mask process for forming the pixel electrode of the liquid crystal display device according to the first embodiment of the present invention will be described with reference to FIGS. 10A to 10D. FIG. 10A is a plan view showing a third mask process of the liquid crystal display according to the first embodiment of the present invention, and FIGS. 10B to 10D are cross-sectional views showing a third mask process of the liquid crystal display device according to the first embodiment of the present invention Fig.

10A and 10B, an organic insulating material having a low dielectric constant is coated on a gate insulating film GI having a semiconductor active layer and a second conductive metal layer formed thereon, and a photolithography process using a third mask process is performed to form a convex portion PT. And a first protective film PAS1 including a concave portion GR and contact holes CH1 and CH2. 10C to 10D, after the first transparent conductive metal material is applied to the entire surface of the first protective film PAS1, the first transparent conductive metal material remains on the concave portion GR of the first protective film PAS1, The pixel electrode Px which contacts the drain electrode D is formed through the contact hole CH2 of the pixel electrode PAS1.

More specifically, the third mask process is performed using a halftone mask. That is, an organic insulating material having a low dielectric constant is coated on the gate insulating film GI on which the semiconductor active layer and the second conductive metal layer are formed, and then a photolithography process using a halftone mask (third photomask) Thereby forming a pattern. In the third photoresist pattern, for example, a region where a contact hole is to be formed is exposed, a region where a concave portion GR of the first protective film PAS1 is to be formed has a first thickness, and a convex portion PT is formed The region is formed to have a thickness greater than the first thickness. Then, the organic insulating material is etched using the third photoresist pattern as a mask, and the third photoresist pattern is removed to form the convex portion PT, the concave portion GR, and the contact holes CH1, CH2) is formed on the first protective film PAS1.

Next, as shown in FIG. 10C, an ITO (Indium Tin Oxide) film, an IZO (indium tin oxide) film, and a PZT film are formed on the entire surface of the first passivation film PAS1 having the convex portion PT, the concave portion GR and the contact holes CH1 and CH2, (Indium Zinc Oxide), or GZO (Gallium-doped Zinc Oxide). After the photoresist PR is applied on the first protective film PAS1 and ashing is performed to the photoresist PR to expose the convex portion PT of the first protective film PAS1, Thereby forming a pattern. Then, the first transparent conductive material is patterned using the fourth photoresist pattern as a mask, and the fourth photoresist pattern is removed to form a concave portion GR of the first protective film PAS1, Thereby forming the pixel electrode Px formed in the holes CH. At this time, the contact hole CH1 for exposing the drain electrode D is shallower than the depth of the contact hole CH2 exposing the common line CL, so that the first transparent conductive material fills only a part of the contact hole CH2 .

Next, a third mask process for forming the common electrode of the liquid crystal display device according to the first embodiment of the present invention will be described with reference to FIGS. 11A to 11E. FIG. 11A is a plan view showing a fourth mask process of the liquid crystal display according to the first embodiment of the present invention, and FIGS. 11B to 11E show a fourth mask process of the liquid crystal display according to the first embodiment of the present invention Fig.

11A to 11C, an inorganic insulating material PAS2M and a photoresist are sequentially coated on a first protective film PAS1 on which a pixel electrode Px is formed, and then a fourth mask process and an ashing process are performed to form a flat A second protective film PAS2 having a part FP and a protruding part EP is formed. Then, as shown in Figs. 11D and 11E, a second transparent conductive material of the same material as the first transparent conductive material is deposited on the flat portion FP of the second protective film PAS2 and the photoresist pattern PR " The common electrode COM formed on the flat portion FP of the second protective film PAS2 is formed by lifting off the photoresist pattern PR ".

More specifically, the fourth mask process is performed using a halftone mask. That is, the inorganic insulating material PAS2M and the photoresist are sequentially coated on the first protective film PAS1 on which the pixel electrode Px is formed, and then a photolithography process using a halftone mask (fourth photomask) is performed A fifth photoresist pattern PR 'having concave portions and convex portions is formed as shown in FIG. 11B. 11C, a second protective film PAS2 having a flat portion FP and a protruding portion EP is formed by ashing the fifth photoresist pattern PR 'and the inorganic insulating material PAS2M in order, The second photoresist pattern PR "remaining on the protruding portion EP of the second protective film PAS2 is formed.

Next, a second transparent conductive material (COMM) such as ITO, IZO, or GZO is deposited to cover the second protective film PAS2 and the sixth photoresist pattern PR ". Then, the second protective film PAS2 The sixth photoresist pattern PR "remaining on the projecting portion EP is lifted off to remove the sixth photoresist pattern PR " and the second transparent conductive material COMM thereon, The common electrode COM remaining in the flat portion of the second protective film PAS2 is formed as shown in FIG.

According to the method of manufacturing a liquid crystal display according to the first embodiment of the present invention, it is possible to manufacture a thin film transistor array (TFTA) of a liquid crystal display device by only a 4-mask process, so that at least two mask processes are omitted . Since each mask process includes many processes such as a thin film deposition process, a cleaning process, a photolithography process, an etching process, and a photoresist pattern peeling process, the manufacturing cost and time can be reduced.

Hereinafter, a liquid crystal display according to a second embodiment of the present invention will be described with reference to FIGS. 12 and 13. FIG. FIG. 12 is a plan view showing one pixel region of the thin film transistor array of the liquid crystal display according to the second embodiment of the present invention, and FIG. 13 is a sectional view taken along line III-III 'of FIG.

12 and 13, a thin film transistor array (TFTA) of a liquid crystal display according to a second embodiment of the present invention includes a first substrate SUB1, a first substrate SUB1, a second substrate SUB2, And a thin film transistor T formed in each pixel region defined by the intersection of the gate line GL and the data line DL and the gate line GL and the data line DL.

The thin film transistor T includes a gate electrode G extending from the gate line GL, a source electrode S extending from the data line DL, a drain electrode D opposed to the source electrode S, And a semiconductor active layer A which overlaps the gate electrode G on the insulating film GI and forms a channel between the source electrode S and the drain electrode D.

The thin film transistor array of the liquid crystal display according to the second embodiment of the present invention includes a first protective film PAS1 covering the thin film transistor T, a common electrode COM formed on the first protective film PAS1, And a pixel electrode Px arranged to overlap the common electrode COM on the second protective film PAS2 covering the common electrode COM.

The first protective film PAS1 may include an insulating film and a planarizing film. In the liquid crystal display device according to the second embodiment of the present invention, a single protective film is described as an example. The first protective film PAS1 has a contact hole CH exposing the drain electrode D of the thin film transistor T. [ The first protective film PAS1 is formed so that a first region corresponding to the black matrix BM of the color filter array and a second region corresponding to the pixel region have step differences. That is, the first region of the first protective film PAS1 is formed to be high and the second region to be low, so that the first region is formed as a convex portion and the second region is formed as a concave portion. The contact hole CH is formed in the first region of the first protective film PAS1.

The common electrode COM is formed in the region except for the region where the thin film transistor T is formed. The common electrode COM is connected to the common line CL arranged in parallel with the gate line GL through the contact hole CH2 passing through the first protective film PAS. The common electrode COM is supplied with a reference voltage (or a common voltage) for driving the liquid crystal through the common line CL.

The second protective film PAS2 is formed to cover the common electrode COM and has a flat portion FP and a flat portion FP in the pixel region defined by the intersection of the gate line GL and the data line DL. And at least two protruding portions (EP) protruding from the upper portion at regular intervals.

The pixel electrode Px is formed on the second protective film PAS2 except for the protrusion EP. That is, the pixel electrode Px is formed so as to expose the protrusion EP and is positioned below the upper end of the protrusion EP. The pixel electrode Px is connected to the drain electrode D of the thin film transistor T through the contact hole CH passing through the first and second protective films PAS1 and PAS2. The pixel electrode Px is supplied with a data voltage supplied from the data line DL through the thin film transistor T. [

Since the pixel electrode Px is not formed on the protruding portion EP of the second protective film PAS2 as described above, a fringe field is formed between the pixel electrode Px and the common electrode COM superimposed over the second protective film PAS2 . Therefore, the liquid crystal molecules arranged in the horizontal direction between the thin film transistor array TYFTA and the color filter array CFA are rotated by dielectric anisotropy. Accordingly, the transmittance of light passing through the pixel region is changed according to the degree of rotation of the liquid crystal molecules, thereby realizing the gradation.

According to the liquid crystal display device of the second embodiment of the present invention, the pixel electrode Px is formed on the flat portion FP between the protruding portions EP of the second protective film PAS2, The distance between the pixel electrodes Px becomes close to each other. Since the electrostatic capacitance is inversely proportional to the distance between the two electrodes, the electrostatic capacitance of the storage capacitor formed of the common electrode COM and the pixel electrode Px increases. Therefore, the effect of improving the charging characteristic and the uniformity of the liquid crystal display device can be obtained.

In addition, since the first protective film PAS1 has a step by the first region corresponding to the black matrix BM and the second region corresponding to the pixel region, even if an external force is applied to the liquid crystal display device and the column spacer is shifted, Since the influence of the mutual shift can be compensated for by the different arrangement of the spacers, it is possible to prevent the orientation of the liquid crystal located around the column spacer from being destroyed, thereby preventing the occurrence of light leakage.

Next, the prevention of light leakage induced by the liquid crystal display according to the second embodiment of the present invention will be described in more detail with reference to FIGS. 14A and 14B. 14A is a cross-sectional view illustrating a liquid crystal display according to a second embodiment of the present invention, and FIG. 14B is a view schematically showing a position of a column spacer of a liquid crystal display according to a second embodiment of the present invention.

14A and 14B, a liquid crystal display according to a second embodiment of the present invention includes a color filter array CFA (color filter array) opposite to the thin film transistor array TFTA shown in FIG. 16 with a liquid crystal layer LC therebetween, ).

The color filter array CFA includes a color filter CF formed on the second substrate SUB2 and a black matrix BM partitioning the color filter CF. The color filter array (CFA) also includes a thin film transistor array (TFTA) and a column spacer (CS) for maintaining a cell gap of the liquid crystal cell.

The column spacer CS is located in a region corresponding to the concave portion of the first protective film PAS1 corresponding to the black matrix BM as shown in Figs. 14A and 14B. More specifically, the column spacers CS are arranged in regions corresponding to the black matrix BM and the data lines DL. In the liquid crystal display device according to the second embodiment of the present invention, the first spacer CS among the column spacers adjacent to each other overlaps the data line DL at a position corresponding to the concave portion on the convex portion of the first protective film PAS1 The other second spacer CS is arranged to overlap the data line DL at a position corresponding to the concave portion on the lower side of the convex portion of the first protective film PAS1. According to this structure, the first and second column spacers CS and CS 'are disposed on opposite sides of the convex portion of the first protective film PAS1. Therefore, even if an external force is applied to the liquid crystal display device and the first and second column spacers CS and CS 'are shifted to either side, one of the two is prevented from being shifted by the convex portion of the first passivation film PAS1. Therefore, since none of the first and second column spacers CS and CS 'can contact the common electrode COM, the alignment of the liquid crystal located around the column spacers CS and CS' is broken to thereby cause light leakage The phenomenon can be prevented.

Next, a method of manufacturing a liquid crystal display device according to a second embodiment of the present invention will be described with reference to FIGS. 15A to 18E. Hereinafter, for convenience of description, only one pixel region will be described. One pixel region is formed in a pair of upper and lower gate lines and a pair of left and right data lines. However, in order to simplify the description, only one gate line and two data lines are shown in the following description of the manufacturing method.

First, with reference to FIGS. 15A and 15B, a first mask process for forming the gate line and the gate electrode of the liquid crystal display device according to the second embodiment of the present invention and the gate line including the common line will be described do. FIG. 15A is a plan view showing a first mask process of a liquid crystal display according to a second embodiment of the present invention, and FIG. 15B is a sectional view showing a first mask process of the liquid crystal display device according to the second embodiment of the present invention to be.

Referring to FIGS. 15A and 15B, a first conductive metal material is deposited on a transparent first substrate SUB1, and then a first photoresist is entirely coated. Then, a first photoresist pattern is formed by performing a photolithography process using the first photomask. Then, the gate metal is etched using the first photoresist pattern as a mask, the gate line GL arranged in the first direction (for example, the lateral direction) by removing the first photoresist pattern, A gate electrode GE extending to the region, and a common line CL arranged in parallel with the gate line GL are formed.

The first conductive metal includes a low-resistance metal material such as copper (Cu) or aluminum (Al) and a metal material resistant to corrosion such as titanium (Ti), nickel (Ni), or molybdenum (Mo). As another example, it may have a structure in which a copper layer and a titanium-molybdenum alloy layer are laminated, a structure in which a molybdenum layer and an aluminum-neodymium alloy layer are laminated, or a double layer structure in which a copper layer and a molybdenum layer are laminated. As another example, a nickel layer, a copper layer, and a titanium-molybdenum alloy layer may have a laminated triple-layer structure.

Next, the data line DL, the semiconductor active layer A, the source electrode S, and the drain electrode D of the liquid crystal display device according to the first embodiment of the present invention are included with reference to Figs. 16A to 16C And a second mask process for forming the semiconductor active layer and the second conductive metal layer will be described. FIG. 16A is a plan view showing a second mask process of the liquid crystal display device according to the second embodiment of the present invention, and FIGS. 11B and 11C are views showing a second mask process of the liquid crystal display device according to the second embodiment of the present invention Fig.

16A and 16B, an insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx) is applied to the entire surface of a first substrate SUB1 on which a first conductive metal layer is formed to form a gate insulating film GI . Next, as shown in FIGS. 16A and 16C, a semiconductor material and a second conductive metal material are sequentially applied on the entire surface of the gate insulating film GI, and then the semiconductor active layers A, The semiconductor active layer and the second conductive metal layer including the data line DL, the source electrode S, and the drain electrode D are formed.

More specifically, the second mask process is performed using a halftone mask. For this purpose, the semiconductor material sequentially deposited on the gate insulating film (GI) and the second photoresist are coated on the second conductive metal material. As the second conductive metal material, the same material as the first conductive metal material is used. Then, a photolithography process using a halftone mask (second photomask) is performed to form a second photoresist pattern. Then, the semiconductor material and the second conductive metal material are etched using the second photoresist pattern as a mask, and the second photoresist pattern is removed to remove the second photoresist pattern in the second direction (e.g., the transverse direction) A source electrode S extending from the data line DL to the pixel region, and a drain electrode (for example, a vertical direction) D) and a semiconductor active layer (A) overlapping the second conductive metal pattern are formed. The thin film transistor T is formed by the gate electrode G, the semiconductor active layer A, the source electrode S and the drain electrode D formed by the first mask process and the second mask process.

Next, a third mask process for forming the common electrode of the liquid crystal display device according to the second embodiment of the present invention will be described with reference to FIGS. 17A to 17D. FIG. 17A is a plan view showing a third mask process of the liquid crystal display according to the second embodiment of the present invention, and FIGS. 17B to 10D are views showing a third mask process of the liquid crystal display device according to the second embodiment of the present invention Fig.

17A and 17B, an organic insulating material having a low dielectric constant is coated on a gate insulating film GI having a semiconductor active layer and a second conductive metal layer formed thereon, and a photolithography process using a third mask process, And a first protective film PAS1 including a concave portion GR and contact holes CH1 and CH2. 17C to 17D, after the first transparent conductive metal material is applied to the entire surface of the first protective film PAS1, the first transparent conductive metal material is deposited on the first protective film PAS1, remaining on the concave portion GR of the first protective film PAS1, A common electrode COM is formed in contact with the common line CL through the contact hole CH2 of the pixel PAS1.

More specifically, the third mask process is performed using a halftone mask. That is, an organic insulating material having a low dielectric constant is coated on the gate insulating film GI on which the semiconductor active layer and the second conductive metal layer are formed, and then a photolithography process using a halftone mask (third photomask) Thereby forming a pattern. In the third photoresist pattern, for example, a region where a contact hole is to be formed is exposed, a region where a concave portion GR of the first protective film PAS1 is to be formed has a first thickness, and a convex portion PT is formed The region is formed to have a thickness greater than the first thickness. Then, the organic insulating material is etched using the third photoresist pattern as a mask, and the third photoresist pattern is removed to form the convex portion PT, the concave portion GR, and the contact holes CH1, CH2) is formed on the first protective film PAS1.

Next, as shown in FIG. 17C, an ITO (Indium Tin Oxide) film, an IZO (indium tin oxide) film, and a PZT film are formed on the entire surface of the first passivation film PAS1 having the convex portion PT, the concave portion GR and the contact holes CH1 and CH2, (Indium Zinc Oxide), or GZO (Gallium-doped Zinc Oxide). After the photoresist PR is applied on the first protective film PAS1 and ashing is performed to the photoresist PR to expose the convex portion PT of the first protective film PAS1, Thereby forming a pattern. Then, the first transparent conductive material is patterned using the fourth photoresist pattern as a mask, and the fourth photoresist pattern is removed to form a concave portion GR of the first protective film PAS1, Thereby forming a common electrode COM formed in the holes CH1 and CH2. At this time, since the contact hole CH1 exposing the drain electrode is deeper than the depth of the contact hole CH2 exposing the common line CL, the first transparent conductive material fills only a part of the contact hole CH1.

Next, a third mask process for forming the common electrode of the liquid crystal display device according to the second embodiment of the present invention will be described with reference to FIGS. 18A to 11E. 18A is a plan view showing a fourth mask process of the liquid crystal display device according to the second embodiment of the present invention, and FIGS. 18B through 18E are views showing a fourth mask process of the liquid crystal display device according to the second embodiment of the present invention Fig.

18A to 18C, an inorganic insulating material PAS2M and a photoresist are sequentially coated on a first protective film PAS1 on which a common electrode COM is formed, and then a fourth mask process and an ashing process are performed, A second protective film PAS2 having a part FP and a protruding part EP is formed. Then, as shown in Figs. 18D and 18E, a second transparent conductive material of the same material as the first transparent conductive material is deposited on the flat portion FP of the second protective film PAS2 and the photoresist pattern PR " The pixel electrode Px formed on the flat portion FP of the second protective film PAS2 is formed by lifting off the photoresist pattern PR ".

More specifically, the fourth mask process is performed using a halftone mask. To this end, an inorganic insulating material PAS2M and a photoresist are sequentially coated on the first protective film PAS1 on which the common electrode COM is formed, and then a photolithography process using a halftone mask (fourth photomask) is performed A fifth photoresist pattern PR 'having concave portions and convex portions is formed as shown in FIG. 18B. A second protective film PAS2 having a flat portion FP and a protruding portion EP as shown in FIG. 18C is formed by successively ashing the fifth photoresist pattern PR 'and the inorganic insulating material PAS2M, The second photoresist pattern PR "remaining on the protruding portion EP of the second protective film PAS2 is formed.

Next, a second transparent conductive material (PxM) such as ITO, IZO, or GZO is deposited to cover the second protective film PAS2 and the sixth photoresist pattern PR ". Then, the second protective film PAS2 The sixth photoresist pattern PR "remaining on the projection EP is lifted off and the sixth photoresist pattern PR " and the second transparent conductive material COMM thereon are removed, The pixel electrode Px remaining in the flat portion FP of the second protective film PAS2 and the contact holes CH1 and CH2 is formed.

According to the method of manufacturing a liquid crystal display device according to the second embodiment of the present invention, since the thin film transistor array (TFTA) of the liquid crystal display device can be manufactured by only the 4-mask process, at least two masking processes are omitted . Since each mask process includes many processes such as a thin film deposition process, a cleaning process, a photolithography process, an etching process, and a photoresist pattern peeling process, the manufacturing cost and time can be reduced.

According to the liquid crystal display device according to the first and second embodiments of the present invention described above, since the margin area of the black matrix, which has been formed to prevent light leakage in the area around the column spacer, can be eliminated, Can be obtained.

19A is a view showing a region of a black matrix having a margin region in order to prevent light leakage in the region around the column spacer in the conventional liquid crystal display device, and FIG. 19B is a view showing regions of the liquid crystal display according to the first and second embodiments of the present invention Fig. 5 is a diagram showing an area of a black matrix in which no spare area is provided in the apparatus. 20 (a) is a view for explaining the aperture ratio obtained by the conventional liquid crystal display device. 20 (b) is a view for explaining the aperture ratio obtained by the liquid crystal display device according to the first embodiment of the present invention, and FIG. 20 (c) is a view for explaining the aperture ratio obtained by the liquid crystal display device according to the second embodiment of the present invention And Fig.

19A, 19B and 20, according to the liquid crystal display according to the first and second embodiments of the present invention, as compared with the conventional liquid crystal display, The margin area of the black matrix can be removed, so that the aperture ratio can be secured.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the present invention should not be limited to the details described in the detailed description, but should be defined by the claims.

T: thin film transistor SUB1, SUB2: substrate
GL: gate line CL: common line
DL: Data line Px: Pixel electrode
COM: common electrode A: semiconductor active layer
G: gate electrode S: source electrode
D: drain electrode GI: gate insulating film
PAS1, PAS2: Shield

Claims (6)

A liquid crystal display device comprising a color filter array arranged opposite a thin film transistor array with a liquid crystal layer interposed therebetween and including a black matrix and color filters,
The thin film transistor array includes a plurality of gate lines and a plurality of data lines arranged to cross each other on a substrate;
A plurality of thin film transistors formed at intersections of the plurality of data lines and the plurality of gate lines;
A plurality of pixel electrodes respectively formed in pixel regions defined by the intersection of the plurality of gate lines and the data lines and connected to the plurality of thin film transistors through a first protective film; And
And a common electrode arranged to overlap the plurality of pixel electrodes with a second protective film interposed therebetween,
Wherein the first protective film has a concave portion formed in a region corresponding to the pixel region and a convex portion corresponding to the black matrix,
Wherein the second protective film has a flat portion and a protruding portion that are alternately arranged in a region corresponding to the concave portion of the first protective film,
And the common electrode is disposed in the flat portion of the second protective film.
The method according to claim 1,
Wherein the color filter array includes a plurality of column spacers for maintaining a cell gap with the thin film transistor array,
Wherein the plurality of column spacers are arranged alternately in correspondence with the upper side and the lower side in the width direction of the gate line in a region corresponding to the convex portion of the first protective film.
A liquid crystal display device comprising a color filter array arranged opposite a thin film transistor array with a liquid crystal layer interposed therebetween and including a black matrix and color filters,
A plurality of gate lines and a plurality of data lines arranged on the substrate so as to cross each other;
A plurality of thin film transistors formed at intersections of the plurality of data lines and the plurality of gate lines;
A common electrode formed on a first protective film covering the plurality of thin film transistors; And
And a plurality of pixel electrodes arranged to overlap the common electrode with a second protective film interposed therebetween and connected to the plurality of thin film transistors through contact holes passing through the first and second protective films,
Wherein the first protective film has a concave portion formed in a region corresponding to the pixel region,
Wherein the second protective film has a flat portion and a protruding portion that are alternately arranged in a region corresponding to the concave portion of the first protective film,
Wherein each of the plurality of pixel electrodes is disposed in a flat portion of the second protective film.
The method of claim 3,
Wherein the color filter array further comprises a plurality of column spacers for maintaining a cell gap with the thin film transistor array,
Wherein the plurality of column spacers are alternately arranged so as to overlap the data lines in regions corresponding to both concave portions around the convex portions of the first protective film.
Depositing a first conductive metal material on the substrate and forming a gate electrode in a first mask process;
Forming a gate insulating film covering the gate electrode;
Forming a semiconductor active layer, a data line, a source electrode, and a drain electrode by a second mask process using a first halftone mask after sequentially applying a semiconductor material and a second conductive metal material on the gate insulating layer;
An organic insulating material is applied to the gate insulating film on which the semiconductor active layer, the data line, the source electrode, and the drain electrode are formed, and then a third mask process using a second halftone mask exposes the step and the drain electrode. Forming a first passivation layer having a first contact hole, applying a first transparent conductive material on the first passivation layer, and forming a pixel electrode in a pixel region by an ashing process using a photoresist;
Forming a second protective film having a planar portion and a protruding portion in the pixel region by a fourth mask process using a third halftone mask after applying an inorganic insulating material on the first protective film on which the pixel electrode is formed, And forming a common electrode in the flat portion of the second protective film by a lift process after applying the second transparent conductive material to the second protective film.
Depositing a first conductive metal material on the substrate and forming a gate electrode in a first mask process;
Forming a gate insulating film covering the gate electrode;
Forming a semiconductor active layer, a data line, a source electrode, and a drain electrode by a second mask process using a first halftone mask after sequentially applying a semiconductor material and a second conductive metal material on the gate insulating layer;
An organic insulating material is applied to the gate insulating film on which the semiconductor active layer, the data line, the source electrode, and the drain electrode are formed, and then a third mask process using a second halftone mask exposes the step and the drain electrode. Forming a first protective layer having a first contact hole, applying a first transparent conductive material on the first protective layer, and forming a common electrode by ashing using a photoresist;
A third masking process using a third halftone mask after applying an inorganic insulating material on the first protective film on which the common electrode is formed, forming a flat portion and a protruding portion in the pixel region, and a second portion overlapping the first contact hole, Forming a second protective film having a contact hole, applying a second transparent conductive material on the second protective film, and forming a pixel electrode in a flat portion of the second protective film by a lift-off process, A method of manufacturing a display device.

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