KR20160016003A - Resist stripper composition and a method of stripping resist using the same - Google Patents
Resist stripper composition and a method of stripping resist using the same Download PDFInfo
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- KR20160016003A KR20160016003A KR1020140099098A KR20140099098A KR20160016003A KR 20160016003 A KR20160016003 A KR 20160016003A KR 1020140099098 A KR1020140099098 A KR 1020140099098A KR 20140099098 A KR20140099098 A KR 20140099098A KR 20160016003 A KR20160016003 A KR 20160016003A
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- Prior art keywords
- resist
- ether
- compound
- composition
- stripping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention provides a resist stripping liquid composition comprising an amide compound represented by the following formula (1), an organic amine compound, and a glycol ether compound, and a method for stripping a resist using the same.
[Chemical Formula 1]
In this formula,
X is O or NR, wherein R is hydrogen, an aliphatic hydrocarbon of 1 to 4 carbons or an aldehyde group.
Description
The present invention relates to a resist stripping liquid composition and a stripping method of a resist using the resist stripping liquid composition. More particularly, the present invention relates to a resist stripping liquid composition capable of effectively removing a resist pattern deformed by etching during the manufacturing process of a flat panel display, And a resist peeling method.
In recent years, efforts have been made to increase the number of pixels per unit area as the demand for high-resolution implementation of flat panel displays increases. In accordance with this tendency, reduction of the wiring width is also required, and in order to cope with this, the dry etching process has been introduced, and the process conditions have become increasingly severe. In addition, due to the enlargement of the flat panel display device, an increase in the signal speed in the wiring is also required, and copper having a lower resistivity than aluminum is now being used as a wiring material. Accordingly, the required performance of the stripping solution used in the stripping process, which is a resist stripping process, is increasing. Specifically, a considerable level of exfoliation property with respect to the removal force of deformed resist generated after the dry etching process and the corrosion inhibiting ability against the metal wiring is required. In addition, in order to secure price competitiveness, it is required to improve the process speed, increase the number of storable days of the composition, and increase the number of processed substrates.
In response to the needs of such industries, new technologies are being disclosed, including:
Korean Patent No. 10-1304723 discloses an amide compound represented by the following general formula (1), a water-soluble organic amine compound, a hydroxylamine salt compound, a water-soluble polar aprotic solvent, an alkylene glycol alkyl ether compound, Roxy compounds, and deionized water.
[Chemical Formula 1]
(2)
Korean Patent Laid-Open No. 10-2003-0026822 discloses a process for the preparation of N-methyl-pyrrolidone (N-methyl-2-pyrrolidone), N, N-dimethyl-acetamide, dimethyl- Amide, and an amine compound capable of dissolving in water. The present invention also provides a resist stripper comprising a composition comprising a high-polarity solvent containing at least one member selected from the group consisting of amines,
The peeling liquids are characterized in that they contain an amide compound. However, considering the physical properties such as polarity, reactivity with amine, and boiling point of the amide compounds contained, It is thought that improvement is necessary.
SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art as described above, and it is an object of the present invention to provide a resist pattern forming method and a resist pattern forming method which are excellent in the ability to remove a resist pattern deformed after wet or dry etching, And a resist stripping method using the same.
According to the present invention,
There is provided a resist stripping liquid composition comprising an amide compound represented by the following formula (1), an organic amine compound, and a glycol ether compound:
[Chemical Formula 1]
In this formula,
X is O or NR, wherein R is hydrogen, an aliphatic hydrocarbon of 1 to 4 carbons or an aldehyde group.
In addition,
(I) depositing a conductive metal film on a flat panel display substrate,
(II) forming a resist film on the conductive metal film;
(III) selectively exposing the resist film;
(IV) developing the exposed resist film to form a resist pattern;
(V) etching the conductive metal film using the resist pattern as a mask; And
(VI) a step of peeling the resist, which is denatured and cured by the resist pattern formation and etching after the etching process, from the substrate using the resist stripping liquid composition of the present invention.
In addition,
There is provided a method of manufacturing a flat panel display device and a method of manufacturing a flat panel display device, which comprises a step of peeling off a resist for a flat panel substrate using the resist stripping liquid composition of the present invention.
The resist stripping liquid composition of the present invention has an excellent polarity of the amide compound contained in the stripping liquid and thus provides an excellent effect in removing the resist pattern deformed by etching.
It also provides excellent storage stability and provides the effect of minimizing process losses.
According to the present invention,
The present invention relates to a resist stripper composition comprising an amide compound represented by the following formula (1), an organic amine compound, and a glycol ether compound:
[Chemical Formula 1]
In this formula,
X is O or NR, wherein R is hydrogen, an aliphatic hydrocarbon of 1 to 4 carbons or an aldehyde group.
The present invention is characterized by including an amide compound represented by the above formula (1). That is, since the compound of formula (1) has two heteroatoms in the ring and has a formamide structure with the highest polarity among the amide compounds, it has a high polarity. Therefore, when a resist composed of a highly polar novolak resin is peeled It is possible to improve the rate of penetration of the stripping liquid onto the resist and to stably dissolve the stripped resist, thereby providing an effect of increasing the stripping speed. In addition, due to the steric hindrance caused by the hexacyclic ring, the substitution reaction of formamide with the amine is suppressed, thereby improving the stability over time, and the boiling point is high at 230 DEG C or higher, so that the vapor pressure at the process temperature is lowered, Minimize evaporation loss.
In the compound of Formula 1, the aliphatic hydrocarbon having 1 to 4 carbons may be selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, s-butyl, and t-butyl.
Examples of specific compounds are:
The amide compound represented by Formula 1 may be contained in an amount of 5 to 50% by weight, and more preferably 10 to 40% by weight based on the total weight of the composition. When the amide compound of formula (1) is contained in an amount of less than 5% by weight, the effect of increasing the peeling speed on the resist decreases. When the amount exceeds 50% by weight, Can cause problems. Further, since the amide compound is relatively expensive, it is disadvantageous in terms of cost.
The organic amine compound serves to decompose the resist crosslinked product into small structural units, which are deformed or not deformed by etching.
As the organic amine compound, materials known in this field can be used.
Specific examples thereof include primary amines such as methylamine, ethylamine, monoisopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine and pentylamine; Examples of the secondary amine such as dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine and methylisobutylamine Amine; Tertiary amines such as trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine and methyldipropylamine; But are not limited to, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, N-methyldiethanolamine, , N, N-diethylaminoethanol, 2- (2-aminoethylamino) -1-ethanol, 1-amino-2-propanol, Alkanolamines such as amino-1-butanol and dibutanolamine; (Methoxymethyl) dimethylamine, (methoxymethyl) dimethylamine, (butoxymethyl) dimethylamine, (isobutoxymethyl) dimethylamine, (methoxymethyl) diethanolamine (Methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol and the like Alkoxyamine; A morpholine compound such as morpholine, N- (3-aminopropyl) morpholine, N- (methoxymethyl) morpholine, N- (butoxymethyl) morpholine, N- (2-hydroxyethyl) ; 1-methylpiperazine, 1-methylpiperazine, 1,4-dimethylpiperazine, 1,4-diethylpiperazine, 1- (2-hydroxyethyl) piperazine, 1- Amino-4-methylpiperazine, 1-benzylpiperazine, 1-phenylpiperazine, N, N'-di ( (Butoxymethyl) piperazine, N, N'-di (butoxymethyl) piperazine, di (butoxymethyl) piperazine, etc. These compounds may be used singly or in combination of two or more Can be used.
In particular, amine compounds containing a hydroxyl group in the molecule can be more preferably used. This is because amines with small molecular weights and no hydroxy groups can cause process LOSS.
The organic amine compound may be contained in an amount of 2 to 25% by weight, more preferably 3 to 7% by weight based on the total weight of the composition. When the organic amine compound is contained in an amount of less than 2% by weight, the peeling effect on the resist is insufficient. When the organic amine compound is more than 25% by weight, the corrosion rate to the metal wiring can be increased.
The glycol ether compound serves to dissolve the gelled resist polymer by assisting the amide compound and facilitates the removal of the exfoliation liquid by water in the DI rinse process after the exfoliation of the resist to re-precipitate the dissolved resist in the exfoliation liquid. Minimize it. And acts to improve the performance of the organic amine compound, penetrating into the degraded or cross-linked resist and breaking the bonds existing in the molecule or between the molecules.
As the glycol ether compound, materials known in this field can be used.
Specific examples thereof include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisopropyl Ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, Propylene glycol monomethyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and alcohols having a cyclic ether bond. May be used alone or in combination of two or more.
The glycol ether compound may be included in an amount such that the total weight of the composition is 100% by weight.
The release liquid composition of the present invention may contain 5 to 50% by weight of the amide compound represented by the formula (1), 2 to 25% by weight of the organic amine compound, and the remaining amount of the glycol ether compound, based on the total weight of the composition.
In addition to the above components, the release liquid composition of the present invention may further include components commonly used in the field such as surfactants, corrosion inhibitors, non-polar polar solvents, and water.
Examples of the surfactant include anionic surfactants, cationic surfactants and nonionic surfactants. Of these, nonionic surfactants having excellent wettability and less bubble formation are preferably used.
Examples of the nonionic surfactant include polyoxyethylene alkyl ether type, polyoxyethylene alkyl phenyl ether type, polyoxyethylene polyoxypropylene alkyl ether type, polyoxyethylene polyoxybutylene alkyl ether type, polyoxyethylene alkylamino ether Polyoxyethylene alkylamido ether type, polyethylene glycol fatty acid ester type, sorbitan fatty acid ester type, glycerin fatty acid ester type, alkyrol amide type and glycerin ester type surfactants. These surfactants may be used singly or in combination of two or more. More than one species can be used together.
The surfactant is preferably contained in an amount of 0.001 to 1.0 wt% based on the total weight of the composition. When it is contained in the above-mentioned content range, it is advantageous to uniformly peel off the substrate, and at the same time, it is advantageous to prevent the tendency that handling of the peeling liquid becomes difficult due to severe foaming.
The corrosion inhibitor may be selected from the group consisting of benzotriazole, methyl gallate, tolythriazole, methyltolytriazole, 2,2 '- [[[benzotriazole] methyl] imino] bisethanol, 2,2' - [ Methyl] imino] bis-methanol, 2,2 '- [[[ethyl-1-hydrogen benzotriazol- 2,2 '- [[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol, 2,2'
Benzimidazol-1-yl] methyl] imino] biscarboxylic acid, 2,2'- And azole compounds such as 2,2 '- [[[amine-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol. These compounds may be used singly or as a mixture of two or more Can be used.
The corrosion inhibitor is excellent in the corrosion inhibiting ability of a metal wiring including aluminum and / or a metal wiring including copper, and is particularly excellent in corrosion resistance against copper and a metal containing the same.
The corrosion inhibitor is preferably contained in an amount of 0.01 to 5% by weight based on the total weight of the composition. If the content of the corrosion inhibitor is less than 0.01% by weight, corrosion may occur in the copper or the metal wiring including the copper or rhenium in the rinsing process by peeling or deionized water. When the corrosion inhibitor is added in an amount exceeding 5% by weight, The effect is not improved because it is no longer improved.
The resist stripping composition of the present invention can be prepared by mixing the above-mentioned compounds in an appropriate amount, and the mixing method is not particularly limited and various known methods can be applied without limitation.
The present invention also provides a resist stripping method characterized by using the resist stripper composition of the present invention. The above-mentioned resist peeling method is a method for peeling a resist,
(I) depositing a conductive metal film on a flat panel display substrate,
(II) forming a resist film on the conductive metal film;
(III) selectively exposing the resist film;
(IV) developing the exposed resist film to form a resist pattern;
(V) etching the conductive metal film using the resist pattern as a mask; And
(VI) A step of peeling the resist, which has been modified and cured by the resist pattern formation and etching after the etching process, from the substrate using the resist stripping liquid composition of the present invention.
In addition, the removing method of the present invention may be carried out by performing a dry etching process such as an etchback process or a CMP (Chemical Mechanical Polishing) process without performing a resist pattern forming process using a mask, And a method of peeling off with the peeling liquid composition of the invention.
The formation of the resist film, exposure, development, etching, and peeling in the peeling method can be performed by a method commonly known in the art.
Examples of the types of the resist include positive and negative g-line, i-line and deep ultraviolet (DUV) resists, electron beam resists, X-ray resists, and ion beam resists. , The resist to which the resist stripping composition of the present invention is effectively applied is a photoresist film composed of a novolak-based phenol resin and a photoactive compound based on diazonaphthoquinone, and is also effective for a photoresist film composed of a mixture thereof .
As a method for removing the resist on the flat panel display substrate, the modified or cured resist, and the dry etching residue by using the resist stripping liquid composition of the present invention, a method of immersing the substrate coated with the resist in the stripping liquid, And a method of spraying onto a substrate. In this case, physical treatment such as irradiation of ultrasonic waves, rotation, or contact with a brush that rocks to the left and right may be used in combination. After the removing solution treatment, the removing solution remaining on the substrate can be removed by the subsequent cleaning treatment. The cleaning step is the same as the peeling step except that water or isopropyl alcohol is used in place of the peeling solution.
The peeling method may be a deposition method, a spraying method, or a deposition and spraying method. In the case of peeling by immersion, spraying or immersion and spraying, the temperature for peeling is usually from 15 to 100 캜, preferably from 30 to 70 캜, and the immersion, spraying or immersion and spraying time is usually from 30 seconds to 40 minutes, Preferably 1 minute to 20 minutes, but is not strictly applied in the present invention, and can be modified in a condition that is easy and suitable for a person skilled in the art. If the temperature of the release liquid composition applied on the substrate to which the resist is applied is less than 15 캜, the time required to remove the modified or cured resist film may become excessively long. If the temperature of the composition exceeds 100 占 폚, the lower film layer of the resist film may be damaged, resulting in difficulty in handling the exfoliation liquid.
The resist stripping composition of the present invention and the stripping method using the resist stripping composition of the present invention can be used not only for general resist removal but also for removal of resist and etching residue which are modified or cured by etching gas and high temperature.
In addition,
There is provided a method of manufacturing a flat panel for a display device, which comprises a step of peeling off a resist for a flat panel substrate using the resist stripping liquid composition of the present invention.
In addition,
There is provided a method of manufacturing a flat panel display device, which comprises a step of peeling off a resist for a flat panel substrate using the resist stripping liquid composition of the present invention.
The flat panel and the flat panel display device for a display device manufactured by the above manufacturing method are excellent in the removal of the resist in the manufacturing process and the corrosion of the metal wiring including aluminum and / Respectively.
Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.
Example 1 to 7 and Comparative Example 1 to 2: Resist Peeling liquid Preparation of composition
The components and contents described in Table 1 below were mixed to prepare a resist stripper composition.
[weight%]
[weight%]
[weight%]
week)
(2)
(3)
[Chemical Formula 4]
[Chemical Formula 5]
[Chemical Formula 6]
(7)
DGA: 2- (2-aminoethoxy) ethanol
DEA: diethanolamine
EDG: diethylene glycol monoethyl ether
MTG: triethylene glycol monomethyl ether
Test Example One: Resist Removal performance evaluation
In order to confirm the peeling effect of the resist stripping composition prepared in Examples 1 to 7 and Comparative Examples 1 and 2, a photoresist was applied to a 4-inch bare glass substrate to a thickness of about 2 μm, (Hard-bake) for 10 minutes to prepare a substrate coated with a resist under a severe condition. The substrate was cut into 1.5 cm (width) .times.1.5 cm (length), immersed in the stock solution of resist stripper composition at 50.degree. C., washed and dried to remove the resist completely, The time not observed was measured. The resist stripping time was measured five times for each of the prepared stripping liquid compositions, and the range of time for complete stripping is shown in Table 2 below.
As shown in Table 2, the resist stripper compositions of Examples 1 to 7 had a very short resist stripping time. However, in Comparative Examples 1 and 2, the resist stripping time was relatively longer.
Test Example 2: Evaluation of storage stability (storage property)
Changes in the contents of the organic amine compounds were measured by gas chromatography (GC) while the peeling liquid compositions of Examples 1 to 7 and Comparative Examples 1 and 2 were stored at 70 캜 for 96 hours. The results are shown in Table 3 below Respectively.
As shown in Table 3, it was confirmed that the peeling liquid compositions of Examples 1 to 7 of the present invention exhibited better storage stability because the content of the amine compound was smaller in comparison with the peeling liquid compositions of Comparative Examples 1 and 2 .
Test Example 3: Evaluation of weight change by evaporation loss
100 g of the release liquid composition of Examples 1 to 7 and Comparative Examples 1 and 2 was placed in each container and the weight change due to the evaporation loss was measured while being stored under the temperature condition of 70 캜.
As shown in Table 4, the peeling liquid compositions of Examples 1 to 7 of the present invention exhibited lower evaporation loss than the peeling liquid compositions of Comparative Examples 1 and 2. In fact, although the release liquid composition of the present invention was inadequate, the amount of evaporation loss of the release liquid compositions of Comparative Examples 1 and 2 was not too much to be used.
Claims (9)
[Chemical Formula 1]
In this formula,
X is O or NR, wherein R is hydrogen, an aliphatic hydrocarbon of 1 to 4 carbons or an aldehyde group.
Wherein the amide compound represented by the formula (1) is contained in an amount of 5 to 50% by weight, the organic amine compound is contained in an amount of 2 to 25% by weight, and the glycol ether compound is present in a remaining amount based on the total weight of the composition.
Wherein the aliphatic hydrocarbons of the hydrocarbons 1 to 4 are selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, s-butyl, and t-butyl.
Wherein the organic amine compound is at least one selected from the group consisting of a primary amine, a secondary amine, a tertiary amine, an alkanolamine, an alkoxyamine, a morpholine compound, and a piperazine compound.
Wherein the glycol ether compound is selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monoisopropyl Ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, Propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and alcohols having a cyclic ether linkage Resist stripper composition, characterized in that at least one member selected from.
The resist stripping composition may further comprise at least one member selected from the group consisting of a surfactant, a corrosion inhibitor, an aprotic polar solvent, and water Wherein the resist stripper composition is a resist stripper composition.
(II) forming a resist film on the conductive metal film;
(III) selectively exposing the resist film;
(IV) developing the exposed resist film to form a resist pattern;
(V) etching the conductive metal film using the resist pattern as a mask; And
(VI) A method for stripping a resist, comprising the step of, after the etching process, stripping a resist denatured and cured by the resist pattern formation and etching using the resist stripping liquid composition of any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140099098A KR20160016003A (en) | 2014-08-01 | 2014-08-01 | Resist stripper composition and a method of stripping resist using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140099098A KR20160016003A (en) | 2014-08-01 | 2014-08-01 | Resist stripper composition and a method of stripping resist using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160016003A true KR20160016003A (en) | 2016-02-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| KR1020140099098A KR20160016003A (en) | 2014-08-01 | 2014-08-01 | Resist stripper composition and a method of stripping resist using the same |
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| Country | Link |
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| KR (1) | KR20160016003A (en) |
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2014
- 2014-08-01 KR KR1020140099098A patent/KR20160016003A/en not_active Application Discontinuation
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