KR20160003689U - A packaging structure for a laser diode - Google Patents

A packaging structure for a laser diode Download PDF

Info

Publication number
KR20160003689U
KR20160003689U KR2020150002449U KR20150002449U KR20160003689U KR 20160003689 U KR20160003689 U KR 20160003689U KR 2020150002449 U KR2020150002449 U KR 2020150002449U KR 20150002449 U KR20150002449 U KR 20150002449U KR 20160003689 U KR20160003689 U KR 20160003689U
Authority
KR
South Korea
Prior art keywords
laser diode
packaging structure
structure used
thermally conductive
laser
Prior art date
Application number
KR2020150002449U
Other languages
Korean (ko)
Inventor
호우-치에 리
순-푸 리
Original Assignee
호우-치에 리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호우-치에 리 filed Critical 호우-치에 리
Priority to KR2020150002449U priority Critical patent/KR20160003689U/en
Publication of KR20160003689U publication Critical patent/KR20160003689U/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02272

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention relates to a packaging structure for use in a laser diode, comprising: an insulating thermally conductive substrate having an electronic circuit on top; A laser diode chip mounted on an electronic circuit of the insulating thermally conductive substrate, the laser diode chip having an anode and a cathode, each connected to an external soldering pad via the electronic circuit and connected to external power; And a thermally conductive base mounted on the surface of the insulating thermally conductive substrate to transfer heat generated from the laser diode chip to the thermally conductive base from the insulating thermally conductive substrate for dissipating heat, Side light emission of the insulating thermally conductive substrate, wherein an area of the bonding surface between the insulating thermal conductive substrate and the heat conductive base is 6 mm < 2 >

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a packaging structure used for a laser diode,

The present invention relates to a packaging structure for use in a laser diode, and more particularly, to a submount for mounting a laser diode chip, which is a thermal conduction component, and a packaging structure for providing a larger heat conduction area The heat generated in the production of the laser diode chip can be quickly and effectively dispersed.

1, a packaging structure 10 of a laser diode includes a laser diode chip 110 having an optical axis 101 at the center of a laser beam capable of emitting a pyramidal laser beam 100; A submount 120; Wherein the submount 120 and the heat conduction base 130 are both made of a copper alloy and the laser chip 110 is a semiconductor chip and a bonding agent 118 The submount 120 mounts the laser diode chip 110 while supporting the laser diode chip 110 and transfers the heat to the thermally conductive sheet 130. Here, the thermally conductive sheet itself is not large, Is not large enough to allow heat to escape into the air itself, so that a larger external radiating mechanism 191 (e.g., a tool outer case made of aluminum or And a dedicated radiating fin). In order to effectively dissipate heat, the main heat conduction base surface 192 is used as a flat and large area, and in general, the main heat conduction base surface 192 and the lens surface of the condenser lens 105 are parallel (that is, The main thermal conductive base surface 192 and the condenser lens 105 are disposed on the main thermal conductive base surface 192 so that the main thermal conductive base surface 192 and the condenser lens 105 are in contact with each other, Since the heat dissipation effect is comparatively excellent only when the area is made relatively large, the mechanism is generally adopted for low output laser diode packaging. The packaging structure is difficult to use in a high power laser diode packaging structure because a high output laser diode generates a significant amount of heat and has two or three connecting leg pillars beside the submount and a gold wire, There is a problem in that there is no space for enlarging the submount and the heat conduction area of the entire heat conduction path must be minimized since the laser chip is brought close to the chip by connecting the laser chip by wire bonding. That is, as shown in Fig. 1, there is no way to enlarge the heat conduction area even though the joining surface (section A-A) 190 of the submount 120 and the heat conduction base 130 is excessively small. FIG. 2, including FIGS. 2A and 2B, illustrates a packaging structure 20 of a laser diode, the size of which is in millimeters. As shown in FIG. 2A, a laser diode chip 210 capable of emitting a laser beam 200 on an optical axis 201; Submount 220; (A cross section AA) of the sub-mount 220 and the heat conduction base 230 in the packaging structure 20 of the TO-5 laser diode including the heat conduction base 230 and the connecting leg pillars 227 290) is at most 1.3 mm x 3.3 mm = 4.29 mm 2, and does not exceed 6 mm 2, so that the bonding surface (AA) (290) area between the submount and the heat conduction base is too small to allow heat transfer, It becomes difficult to transfer heat from the heat dissipating body 210 to the heat dissipating body. In other words, it must pass through the heat conduction base 130 and pass through the main heat transfer base surface 292 to the external radiating mechanism.

Further, as shown in FIG. 2B, another C-Mount packaging structure 20 'of the laser diode chip generally includes the major components shown in FIG. 2A (the reference numerals are changed from 1xx to 2xx ), The joint surface (short side AA) 290 of the thermal conduction is 1.8 mm x 2.0 mm = 3.6 mm 2, and does not exceed 6 mm 2.

According to the physics, those skilled in the art will recognize that the heat transfer rate is directly proportional to the heat conduction area. In the packaging of the laser diode, the heat transfer area of the submount (that is, the area of the bonding surface described above) ) Is excessively small, it can be seen that the high heat generated in the laser diode chip can not be transmitted from the submount to the packaged heat conduction base to be diverted. In addition, since the heat sink is installed in a limited space, the submount heat conduction area can not be expanded to enhance the heat dissipation effect. Therefore, the greatest difficulty in the thermal conduction of the conventional laser diode packaging structure is that the submount heat conduction area is too small.

More preferably, as shown in Fig. 1 and Fig. 2, all the laser diodes adopt a single package in the shape of a cylinder. In addition to not being able to expand the submount as described above, There is no space for accommodating chips and / or other electronic components at all. That is, in the packaging structure, one or more laser diodes can not be used for the laser diode, and there is no space for installing other electronic parts for improving the performance.

1 and 2, in the laser diode chip packaging structure 10 and 20, the laser beams 100 and 200 and the optical axes 101 and 201 are connected to the main heat conduction base surfaces 192 and 292, And is not parallel to the vertical direction. Further, in the conventional laser diode packaging method, there is no additional space in the packaging structure that can be used to improve the laser diode performance. For example, a photodiode for measuring the light emission output of the laser diode, a static electricity protection diode, and / (reverse bias) There is no room for additional parts of the protection diode. In addition, since the LED diode chip is a front emission type, it is advantageous for heat dissipation of a high output when a flat type packaging method is adopted. However, since most of the laser diode chips are side luminescent, Is not easy to adopt. That is, since the side-emitting laser diode chip packaging does not adopt flat plate type packaging, parts with large thermal conduction can not be used.

Accordingly, it is necessary to improve the conventional laser diode packaging structure as described above, and it is urgent to develop a packaging structure capable of solving the problem of high heat conduction generated in a laser diode chip of high output side light emission.

In this invention, an insulating thermally conductive substrate is provided, which is similar to a submount of a conventional laser diode, but the arrangement, shape and size (area) It is completely different from the submount.

The present invention relates to a packaging structure for use in a laser diode, and more particularly to a packaging structure for use in a laser diode, which can be used for a high power laser diode, has a bonding surface between a relatively large insulating thermal conductive substrate and a thermal conductive base, The output size can be arbitrarily adjusted and the shape can be a rectangle, a square or other irregular shape, and the amount of heat generated in the laser diode chip can be quickly and effectively radiated, thereby improving the service life of the laser diode The heat dissipation effect can be improved and the light output of the laser diode can be increased at the same drive current.

In addition, the present invention relates to a packaging structure used in a laser diode. Since the optical axis of the laser diode chip emission is substantially parallel to the surface of the insulating thermally conductive substrate, the assembly can be simplified and the packaging cost can be reduced.

The present invention also relates to a packaging structure for use in a laser diode, wherein the packaging structure has a sufficient space and is provided with a photodiode for measuring the emission output of the laser diode, a reverse bias protection diode and / So that the performance and lifetime of the laser diode can be improved.

In addition, the present invention relates to a packaging structure used in a laser diode. Since the insulating thermal conductive substrate and the thermal conductive base overlap each other and can be made into one independent insulating thermal conductive component, heat can be effectively conducted and dissipated, Can be saved.

The present invention relates to a packaging structure for use in a laser diode, comprising: an insulating thermally conductive substrate having an electronic circuit on top; A laser diode chip mounted on an electronic circuit of the insulating thermally conductive substrate, the laser diode chip having an anode and a cathode, each connected to an external soldering pad via the electronic circuit and connected to external power; And a thermally conductive base mounted on the surface of the insulating thermally conductive substrate to transfer heat generated from the laser diode chip to the thermally conductive base from the insulating thermally conductive substrate for dissipating heat, The area of the bonding surface of the insulating thermal conductive substrate and the thermal conductive base is relatively preferably 6 mm2 to 5,000 mm2, but the output size of the laser diode can be adjusted as needed.

The present invention also relates to a packaging structure for use in a laser diode, comprising: an insulating thermally conductive substrate having an electronic circuit on top; A laser diode chip mounted on an electronic circuit of the insulated thermally conductive substrate, having a positive electrode and a negative electrode, and connected to external soldering pads via the electronic circuit to connect to external power; And a thermally conductive base mounted on the surface of the insulating thermally conductive substrate to transfer heat generated from the laser diode chip to the thermally conductive base from the insulating thermally conductive substrate for dissipating heat, Side light emission of the insulating thermally conductive substrate, and the optical axis of the laser diode chip is substantially parallel to the surface of the insulating thermally conductive substrate.

According to the present invention, it is possible to overcome the drawbacks of the conventional laser diode packaging structure, that is, the junction area of the submount and the heat conduction base is too small to compensate the disadvantage of the thermal conduction image which can not control the laser diode output size, It is possible to provide a packaging structure capable of solving the problem of high heat conduction generated in the laser diode chip of light emission.

FIG. 1 is an explanatory view of an overall structure of a packaging structure 10 used for a laser diode.
2A and 2B are explanatory diagrams of the overall structure of the TO-5 packaging structure 20 and the C-mounting packaging structure 20 used for laser diodes, respectively.
Fig. 3A is an explanatory view of the entire structure of the embodiment in the packaging structure of the laser diode of the present invention. Fig.
3B is an explanatory diagram of yet another embodiment of the packaging structure of the laser diode of the present invention.
4A is a structural view of the embodiment of the packaging structure of the laser diode shown in FIG. 3A.
4B is a structural view of the packaging structure of the laser diode shown in FIG.
4C is a structural view of yet another embodiment of the packaging structure of the laser diode shown in Fig. 4A.

The embodiments of the present invention are intended to further illustrate the present invention and do not limit the scope of protection of the present invention.

In order to compensate for the disadvantage of the conventional thermal conduction image which can not control the laser diode output size because the junction area of the submount and the heat conduction base is excessively small, the present invention proposes the packaging structure 30 shown in Fig. 3A . The packaging structure (30) includes an insulating thermally conductive substrate (320) having an electronic circuit (321) on top; And has solder pads 411 and 412 (as shown in FIG. 4A) of an anode and a cathode, which are mounted on the electronic circuit 321 of the insulated thermally conductive substrate 320. The electronic circuit 321 A laser diode chip 310 connected to external soldering pads 313 and 314 via external power lines and connected to external power; Is placed on the surface 322 of the insulating thermally conductive substrate 320 to transfer the amount of heat generated in the laser diode chip 310 from the insulating thermally conductive substrate 320 to the heat conduction base 330, Wherein the laser diode chip 310 is a side light emission of the insulating thermally conductive substrate 320 and the laser beam 300 emitted from the laser diode chip 310 is a pyramid- And the center of the laser beam is such that the optical axis 301 is substantially parallel to the surface 322 of the insulating thermally conductive substrate 320 and / or generally parallel to the main thermally conductive base surface 392. Here, the insulating thermal conductive board 330 is similar to the submount of the conventional laser diode packaging structure, but has an actual structure different from that of the conventional thermal conductive board, and the size of the insulating thermal conductive board can be greatly extended according to the output size. For example, 2.4 mm x 2.4 mm with a heat transfer area of 5.76 mm 2; 2 mm x 3 mm or 3 mm x 2 mm with a thermal conductivity area of 6 mm 2; 6 mm x 6 mm with a thermal conductivity area of 36 mm 2; 70 mm x 70 mm, and the heat conduction area may be 5,000 mm 2 (see the cross-section A'-A 'in the above bonding surface). That is, the bonding surface area of the present invention can be arbitrarily adjusted to 6 mm 2 to 5,000 mm 2, and the bonding surface 390 (see section A '-A') between the insulating thermally conductive substrate 320 and the thermal conductive base 330 is sufficient Since there is a heat conduction area, there is no longer a problem with heat conduction. Since the insulating thermally conductive substrate 330 is manufactured by using the circuit board manufacturing technology to manufacture the electronic circuit 321 and the soldering pads 311 and 312 to connect the laser diode chip anode and cathode to the electronic circuit, Since the substrate 330 is not limited by the connecting leg pillars, any extension is possible. For example, in the case of a single 1W laser diode, in a comparatively preferred embodiment, the length and width of the insulating thermally conductive substrate are already sufficient, respectively 10 mm, and the area of the main thermal conductive base surface 392 is already sufficient to be 100 mm 2. In addition, since the insulating thermally conductive substrate 320 of the present invention can be largely extended, besides the heat conduction performance is greatly improved, the following advantages can be obtained.

1. In the structure of the present invention, since the insulating thermally conductive substrate is sufficiently large to provide a plurality of screw holes, a non-welding fixing method using screws can be used for the thermally conductive substrate, Not only can it be utilized, but also assembly costs are reduced. In addition, in the present invention, an insulated thermally conductive substrate on which a laser diode chip has already been packaged can be directly fixed to an external heat sink made of aluminum without using a conventional thermally conductive base.

2. Since the submount of the laser diode is so small that the surface used to seat the component is fairly small (for example, for a TO-18 packaging structure, the maximum surface area is 1.3 mm x 1.85 mm = 2.4 mm 2) And other electronic components are difficult to install; In the structure of the present invention, other components can be easily accommodated in the insulated thermally conductive substrate. For example, a diode for protecting static electricity or a reverse bias, a photodiode for measuring the emission output of a laser diode, It can be mounted on the substrate, so that the laser life can be greatly improved, and the cost can be reduced and the area can be reduced.

FIG. 3B is an explanatory view of another embodiment in the packaging structure of the laser diode shown in FIG. 3A of the present invention. In the laser diode packaging structure 30 'of another embodiment, The insulating thermal conductive substrate 320 and the main thermal conductive base surface 392 do not necessarily have to be parallel to each other as shown in FIG. The inner surface of the insulating thermal conductive board 320 and the main thermal conductive base surface 392 can be adjusted in a stepped or other shape together with the outer radializing mechanism 391 according to the optical axis 301, It is possible to arbitrarily change the coarse angle of the main heat conduction base surface 392 from 0 DEG to 180 DEG. In addition, in the present invention, the size of the laser diode chip output It is possible to generate a good heat conduction effect is to provide a heat transfer area of the partition as long as, you can adjust and change the angle of the optical axis. In the conventional packaging structure, the optical axis can not be adjusted because it is generally perpendicular to the main heat conduction base surface.

Example

Fig. 4A is an actual structure of the embodiment (Fig. 3A shows this) in the packaging structure used for the laser diode of the present invention. As shown in the embodiment of FIG. 4A, the present invention relates to a packaging structure 40 for use in a laser diode, which is used for emitting a laser beam 400 having an optical axis 401, An insulated thermally conductive substrate 420 (similar to a submount of a laser diode packaging as described above) with an insulator 421; And is connected to external soldering pads 413 and 414 through the electronic circuit 421 to be connected to external power sources 413 and 414. The solder pads 411 and 412 are disposed on the electronic circuit 421 and have positive and negative electrodes, A laser diode chip 410 connected thereto; And is placed on the surface 422 of the insulating thermally conductive substrate 420 to transfer the amount of heat generated in the laser diode chip 410 from the insulating thermally conductive substrate 420 to the heat conduction base 430, Wherein the laser diode chip 410 is a side light emission of the insulating thermal conductive board 420 and is a side light emitting surface of the insulating thermal conductive board 420 and the heat conductive base 430 490) (i.e., the section A'-A ') can be adjusted based on the output size of the laser diode, and the area size of the bonding surface can be 6 mm 2 to 5,000 mm 2. As described above, in the present invention, the bonding surface area (section A'-A ') between the insulating thermal conductive substrate 422 and the thermal conductive base 430 of the laser diode is determined by the laser diode submounts 120 and 220, (Section A'-A ') of the bonding surfaces 130 and 230, and by adjusting both the shape and the size, it is possible to solve the problem of the conventional packaging heat transfer path and the area narrowing.

4B, the thermal conductive base 430 and the laser diode chip 410 are mounted on different surfaces of the insulating thermal conductive board 422, respectively, as shown in the laser diode packaging structure 40 of FIG. 4B, The thermal conductive base 430 and the laser diode chip 410 are respectively placed on the same surface as the insulating thermal conductive board 422 as shown in the laser diode packaging structure 40 ' The heat conduction base 430 has a plurality of gaps 480 and is used to seat the laser diode chip 410 and to connect the external connection soldering pad with external power.

In the present invention, the area size of the heat conduction base is adjusted according to the demand of the output size of the laser diode, and the bonding surface area (section A'-A ') of the thermal conduction is 6 mm2 to 5,000 mm2, Can be enlarged or reduced according to the output size of the laser diode.

As shown in FIG. 3B, in the laser diode packaging structure 30 'of the present invention, the insulating thermal conductive board 320 and the thermal conductive base 330 are superimposed to be integrally formed. The bonding surface 390 of the insulating thermally conductive substrate 320 and the thermally conductive base 330 forms a certain angle with the main thermally conductive base surface 392 and the angle ranges from 0 ° to 180 °, The main heat conduction base surface 392 is a bonding surface between the heat conduction base 330 and the external radiating mechanism 391.

In the present invention, the insulating thermal conductive boards 320 and 420 and the thermal conductive bases 330 and 430 may be rectangular, square, or other irregular shapes.

4A, in the laser diode packaging structure 40 according to the present invention, a plurality of the laser diode chips 410 may be mounted, and the laser diode chips may be mounted on the electronic circuit, And may be connected to external power through an external soldering pad via the electronic circuit 421.

The laser diode packaging structure 40 of the present invention may more preferably comprise a photodiode 440 and the photodiode 440 may be coupled to the laser diode chip 440. For example, (Not shown in the figure) of the laser diode, and is used to measure the light intensity of the laser diode, and controls the light emission output of the laser diode. And a reverse bias protection diode 450 connected in parallel with the laser diode and arranged in a reverse direction to protect the laser diode by operating when the reverse voltage between the laser diode anodes exceeds a predetermined value, And an electrostatic protection diode 460 arranged in parallel with the laser diode to protect the laser diode when the voltage between the positive and negative electrodes of the laser diode exceeds a predetermined value. Here, the photodiode 440 has an anode and a cathode and is connected to another soldering pad 441 and 442, respectively, and the other soldering pad is used to connect to external power by being disposed in the electronic circuit.

In addition, in the laser diode packaging structure of the present invention, the heat conduction base 430 is more preferably used to seat further disposed electronic components including a plurality of gaps 480, The electronic component is a photodiode 440, a reverse bias protection diode 450 and / or an electrostatic protection diode 460.

In the laser diode packaging structure of the present invention, the insulating thermal conductive substrate 420 may be a ceramic substrate, an insulating thermal conductive carbon substrate, or an aluminum circuit substrate. The thermal conductive base may be a copper alloy plate, an aluminum alloy plate, And the ceramic substrate is an aluminum nitride substrate or an aluminum oxide substrate.

In the present invention, the same reference numerals denote the same parts in Figs. 4A, 4B and 4C.

3A, 3B and 4A, the present invention relates to a laser diode packaging structure 30 or 40, comprising: an insulating thermally conductive substrate 320 or 420 having an electronic circuit 321 or 421 on top; And is mounted on an electronic circuit 321 or 421 of the insulated thermal conductive board 320 or 420 and has positive and negative soldering pads 411 and 412. The electronic circuit 421 is connected to an external soldering pad 313, 314, 413, or 414) and connected to external power; Is placed on the surface 322 or 422 of the insulated thermally conductive substrate 320 or 420 so that the amount of heat generated in the laser diode chip 310 or 410 is transferred from the insulated thermally conductive substrate 320 or 420 to the thermally conductive base 330 or 430 The laser diode chip 410 is a side light emission of the insulating thermally conductive substrate 420. The laser diode chip 410 is a side light emission of the insulated thermally conductive substrate 420, (301 or 401) is generally parallel to the surface (322 or 422) of the insulating thermally conductive substrate (320 or 420).

4A and 4B, the thermal conductive base 430 and the laser diode chip 410 are respectively placed on different surfaces of the insulating thermal conductive board 420 The thermal conductive base 430 and the laser diode chip 410 are respectively mounted on the same surface of the insulating thermal conductive board 422 as shown in FIG. Gap 480 and is used to couple the laser diode chip 410 and / or other electronic components to external power by exposing an externally connected solder pad.

In the packaging structure of the laser diode, a plurality of the laser diode chips are mounted on the electronic circuit. Each of the laser diodes has an anode and a cathode, and is connected to the external soldering pad via the electronic circuit, And the like.

The packaging structure of the laser diode further preferably includes a photodiode 440 and has soldering pads 441 and 442. The photodiode 440 is connected to the main emission direction of the laser diode chip 410 (Not shown in the figure) to control the light emission output of the laser diode; And a reverse bias protection diode 450 connected in parallel with the laser diode and arranged in a reverse direction to protect the laser diode by operating when an inverse voltage between the laser diode anodes exceeds a predetermined value, Or an electrostatic protection diode 460 arranged in parallel with the laser diode to protect the laser diode when the voltage between the electrodes of the laser diode exceeds a predetermined value.

10, 20, 30, 40, 40 ': Packaging structure of laser diode
100, 200, 300, 400: laser beam
101, 201, 301, 401: optical axis
105: condenser lens
110, 210, 310, 410: laser diode chip
118: Bonding agent
120, 220: Submount
127, 227: connecting bridge pillars
320, 420: Isolation thermally conductive substrate
321, 421: Electronic circuit
322, 422: surface of an insulating thermally conductive substrate
130, 230, 330, 430: Heat conduction base
440: a photosensitive diode,
450: reverse bias protection diode
460: Static protection diode
411 and 412: laser diode anode, negative electrode soldering pad,
313, 314, 413, 414: laser diode anode, cathode external connection soldering pad
216: conductor
441, 442: photosensitive diode external connection soldering pad
270, 470: Position fixing groove
480: gap
190, 290: The junction surface of the submount and the heat conducting base (section AA)
390, 490: bonding surface (section A'-A ') between the insulating thermally conductive substrate and the heat conduction base,
191, 391: External radializing mechanism
192, 292, 392, 492: main heat conduction base surface (bonding surface of heat conduction base and external heat dissipating device)

Claims (23)

An insulating thermally conductive substrate having an electronic circuit on top;
A laser diode chip mounted on an electronic circuit of the insulating thermal conductive board and having welding points each having an anode and a cathode and connected to an external soldering pad via the electronic circuit and connected to external power;
And a thermal conductive base used to transfer the heat generated from the laser diode chip to the thermal conductive base from the insulating thermal conductive board and to dissipate the heat generated by the laser diode chip placed on the surface of the insulating thermal conductive board. ,
Wherein the area of the bonding surface between the insulating thermal conductive substrate and the heat conductive base is 6 mm < 2 > to 5,000 mm < 2 >
The packaging structure used for laser diodes.
The method according to claim 1,
The thermal conductive base and the laser diode chip are respectively mounted on different surfaces of the insulating thermally conductive substrate
The packaging structure used for laser diodes.
The method according to claim 1,
The thermal conductive base and the laser diode chip 410 are each placed on the same surface as the insulating thermal conductive substrate, wherein the thermal conductive base has a plurality of gaps and is used for seating the laser diode chip, Used to connect external power by exposing the pad.
The packaging structure used for laser diodes.
The method according to claim 1,
The insulating thermal conductive board and the heat conductive base are superimposed to be integrally manufactured
The packaging structure used for laser diodes.
The method according to claim 1,
The insulated thermally conductive substrate and the thermally conductive base may be rectangular, square, or other irregularly shaped
The packaging structure used for laser diodes.
The method according to claim 1,
Wherein each of the laser diode chips has an anode and a cathode and is connected to an external power through an external soldering pad via the electronic circuit,
The packaging structure used for laser diodes.
The method according to claim 1,
The photodiode may be mounted on the insulated thermally conductive substrate and may be positioned behind the main light emitting direction of the laser diode chip to measure the light intensity of the laser diode.
The packaging structure used for laser diodes.
The method according to claim 1,
The insulated thermally conductive substrate may further include a reverse bias protection diode connected in parallel with the laser diode and arranged in a reverse direction so that when the reverse voltage between the laser diode anodes exceeds a predetermined value, doing
The packaging structure used for laser diodes.
The method according to claim 1,
The insulating thermally conductive substrate may further include an electrostatic protection diode arranged in parallel with the laser diode so as to protect the laser diode when the voltage between the electrodes of the laser diode exceeds a predetermined value
The packaging structure used for laser diodes.
8. The method of claim 7,
The photodiode has an anode and a cathode and is connected to another soldering pad, and the other soldering pad is disposed in the electronic circuit to connect to external power.
The packaging structure used for laser diodes.
The method of claim 3,
The thermally conductive base further preferably includes a plurality of gaps and is further disposed on the insulating thermally conductive substrate to be used for accommodating the electronic component
The packaging structure used for laser diodes.
12. The method of claim 11,
The further disposed electronic component may be a photodiode, a reverse bias protection diode and / or an electrostatic protection diode
The packaging structure used for laser diodes.
The method according to claim 1,
The insulating thermally conductive substrate may be a ceramic substrate, an insulating thermally conductive carbon substrate, or an aluminum circuit substrate
The packaging structure used for laser diodes.
The method according to claim 1,
The heat conduction base may be a copper alloy plate, an aluminum alloy plate, an iron alloy plate, or a carbon thermal conductive substrate
The packaging structure used for laser diodes.
14. The method of claim 13,
The ceramic substrate may be an aluminum nitride substrate or an aluminum oxide substrate
The packaging structure used for laser diodes.
An insulating thermally conductive substrate having an electronic circuit on top;
A laser diode chip mounted on an electronic circuit of the insulating thermal conductive board and having welding points each having an anode and a cathode and connected to external soldering pads via the electronic circuit to connect to external power;
And a thermal conductive base used to transfer the heat generated from the laser diode chip to the thermal conductive base from the insulating thermal conductive board and to dissipate the heat generated by the laser diode chip placed on the surface of the insulating thermal conductive board. ,
Wherein the laser diode chip is a side light emission of the insulating thermally conductive substrate, and an optical axis of the laser diode chip is substantially parallel to a surface of the insulating thermally conductive substrate
The packaging structure used for laser diodes.
17. The method of claim 16,
The thermal conductive base and the laser diode chip 410 are respectively placed on different surfaces of the insulating thermally conductive substrate
The packaging structure used for laser diodes.
17. The method of claim 16,
The thermal conductive base and the laser diode chip 410 are each placed on the same surface as the insulating thermal conductive substrate, wherein the thermal conductive base has a plurality of gaps to accommodate the laser diode chip and / External connection Used to connect external power by exposing the solder pad.
The packaging structure used for laser diodes.
17. The method of claim 16,
The plurality of laser diode chips are mounted on the electronic circuit. Each laser diode has an anode and a cathode. The laser diode is connected to the external power through an external soldering pad via the electronic circuit.
The packaging structure used for laser diodes.
17. The method of claim 16,
The narrow angle between the optical axis of the laser diode chip and the main heat conduction base surface is 0 to 180 degrees
The packaging structure used for laser diodes.
17. The method of claim 16,
The packaging structure used for the laser diode further preferably includes the photosensitive diode, and the photosensitive diode is placed behind the main light emitting direction of the laser diode chip to measure the light intensity of the laser diode
The packaging structure used for laser diodes.
17. The method of claim 16,
The packaging structure used for the laser diode further preferably includes a reverse bias protection diode connected in parallel with the laser diode and arranged in a reverse direction so that when the reverse voltage between the anode and the cathode of the laser diode exceeds a predetermined value, Protecting the laser diode
The packaging structure used for laser diodes.
17. The method of claim 16,
The packaging structure used in the laser diode further preferably includes an electrostatic protection diode arranged in parallel with the laser diode so as to operate when the voltage between the electrodes of the laser diode exceeds a predetermined value to protect the laser diode doing
The packaging structure used for laser diodes.
KR2020150002449U 2015-04-16 2015-04-16 A packaging structure for a laser diode KR20160003689U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2020150002449U KR20160003689U (en) 2015-04-16 2015-04-16 A packaging structure for a laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2020150002449U KR20160003689U (en) 2015-04-16 2015-04-16 A packaging structure for a laser diode

Publications (1)

Publication Number Publication Date
KR20160003689U true KR20160003689U (en) 2016-10-26

Family

ID=57234279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2020150002449U KR20160003689U (en) 2015-04-16 2015-04-16 A packaging structure for a laser diode

Country Status (1)

Country Link
KR (1) KR20160003689U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210154403A (en) * 2020-06-12 2021-12-21 주식회사 만도 Board structure for transmitting and receiving in lidar device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210154403A (en) * 2020-06-12 2021-12-21 주식회사 만도 Board structure for transmitting and receiving in lidar device

Similar Documents

Publication Publication Date Title
JP3202736U (en) Package structure for laser diode
US9559491B2 (en) Laser diode with cooling along even the side surfaces
JP2005354067A (en) High power led package
JP6545991B2 (en) Light source module
JP5038355B2 (en) Optical semiconductor device module
JP2022009833A (en) Light-emitting device
CN109314170B (en) LED metal pad configuration for optimized thermal resistance, solder reliability and SMT process yield
US10707643B2 (en) Laser light source module
JP5235105B2 (en) Light emitting device
TWI604584B (en) Chip-scale package and semiconductor device assembly
JP2019062033A (en) Semiconductor laser device
KR20160003689U (en) A packaging structure for a laser diode
KR102056471B1 (en) Printed circuit board for led lighting apparatus with improved heat dissipation performance
JP6667149B1 (en) Semiconductor laser light source device
JPWO2017145229A1 (en) Laser light source device and method of manufacturing laser light source device
JP2011254106A (en) Semiconductor device module and heat conduction chip for use therein
US11588296B2 (en) Package, light-emitting device, and laser device
TWI580139B (en) A packaging structure for a laser diode
JP2020181997A (en) Light-emitting module
JP2008147592A (en) Semiconductor laser device
JP6380314B2 (en) Light emitting device
JP2014157898A (en) Light source module
KR101259876B1 (en) Led package having a thermoelectric element and method for manufacturin thereof
CN116314526A (en) LED metal pad configuration for optimized thermal resistance, solder reliability and SMT process yield
WO2020044882A1 (en) Semiconductor laser device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
AMND Amendment
E902 Notification of reason for refusal
X601 Decision of rejection after re-examination