KR20150134535A - A vaporizer for the substrate processing apparatus - Google Patents

Abstract

The present invention relates to a vaporizer for a substrate processing apparatus to improve productivity in forming a thin film of a substrate by effectively vaporizing a reaction raw material of a liquid atomized by ultrasonic vibration, and to maximize efficiency in forming a thin film of a substrate by supplying the vaporized reaction raw material to a substrate processing device at a stable pressure. To achieve such an object, the present invention relates to a vaporizer for a substrate processing apparatus which performs a process of depositing a thin film on a semiconductor device. The vaporizer for a substrate processing apparatus comprises: an atomization unit which has a box shape and has a vibrator; a reaction raw material flowing in through a reaction raw material inflow device provided to inject a solution reaction raw material by ultrasonic vibration; a vaporization unit which includes a heater provided in the outer circumference of a pipe-shaped tube to keep the reaction raw gas supplied by the atomization unit at high temperatures while being atomized to microparticles; and a carrying gas inflow device which injects carrying gas to easily vaporize the reaction raw gas kept at high temperatures by the heater, at one end of the tube; and one or more gas discharge units which has one end connected to an end piece provided at the tube end to discharge the reaction raw gas vaporized by the vaporization unit at a predetermined pressure. Accordingly, productivity in forming a thin film of a substrate by effectively vaporizing a solution reaction raw material atomized by ultrasonic vibration is improved, and efficiency in forming a thin film of a substrate by supplying the vaporized reaction raw material to a substrate processing device at a stable pressure can be maximized.

Description

[0001] A VAPORIZER FOR THE SUBSTRATE PROCESSING APPARATUS [0002]

More particularly, the present invention relates to a vaporizer, and more particularly, to a vaporizer that vaporizes liquid raw material, which is atomized into fine particles by ultrasonic vibration in an atomizing section and introduced into a vaporizing section, The present invention relates to a vaporizer for a substrate processing apparatus,

2. Description of the Related Art In general, a substrate processing apparatus for performing a metal organic chemical vapor deposition (MOCVD) process for depositing a thin film using a Metal Orgarnic Source in a semiconductor device manufacturing process, A bubbling method of depositing a thin film on a substrate by replacing a raw material for reaction (hereinafter referred to as " reaction raw material ") with a vapor phase has been mainly used.

That is, a container provided with a predetermined amount of reaction material is heated so as to obtain a sufficient vapor pressure necessary for the reaction, and then a carrier gas such as nitrogen or argon is blown into the vaporized reaction material in the vessel, In a reactor furnace.

However, in the conventional vaporization method as described above, since the reaction raw material is maintained at a high temperature for a long time, the reaction raw material is deteriorated and the deposition process can not be reproducibly performed, and reliable thin film formation is not performed .

Further, when the thin film deposition process of the substrate is completed and the thin film deposition process of another substrate is carried out, defects such as varying of the thickness of the substrate due to the residual reaction material used in the previous process frequently occur.

In order to solve the above-described problems, recently developed vaporizing apparatuses use a liquid flash evaporation method in which a reaction raw material is heated in a liquid state by a vaporizer to be heated at a high temperature. However, There is a problem that the amount of the reaction raw material supplied to the vaporizer is not fully vaporized and the reaction raw material solidified in various places inside the vaporizer is clogged due to repeated use.

(01) Korea Registered Utility Model No. 20-0419924 (02) Korean Patent Publication No. 10-0152702

SUMMARY OF THE INVENTION The present invention has been made in order to solve the conventional problems as described above, and it is an object of the present invention to improve the productivity of the substrate thin film formation by effectively vaporizing the liquid reaction raw material which has been made into fine particles by ultrasonic vibration.

Another object of the present invention is to supply vaporized liquid reaction materials to a substrate processing apparatus at a stable pressure to maximize the efficiency of substrate thin film formation.

It is still another object of the present invention to prevent the source of defective substrates from affecting the next process by quickly discharging the remaining reaction material still remaining in the vaporizing tank after completing one process.

According to an aspect of the present invention,

The present invention relates to a vaporizer for a substrate processing apparatus that performs a process of depositing a thin film on a semiconductor device,

The vaporizer includes:

A reaction material inlet device for injecting a liquid reaction material in a longitudinal direction of one end of the first and second cases through the center of the first and second cases, An atomizer having a vibrator for atomizing the reaction raw material introduced through the ultrasonic vibrator;

A heater provided on the outer periphery of the tubular tube in order to maintain the reaction raw material supplied in the atomized state in the atomized state at a high temperature, and a carrier gas for facilitating vaporization of the reaction raw material maintained at a high temperature by the heater A carrier gas introducing device for introducing the carrier gas into one end of the tube;

And at least one gas discharging part having one end coupled to a tail end of the tube end so as to discharge the reaction raw material vaporized in the vaporizing part at a predetermined pressure.

The reaction material inlet device may further comprise:

And an inlet pipe provided in a longitudinal direction of the center of the atomization unit and having a coupling flange at one end thereof for engaging with the second case.

In addition,

And a clamp provided at both ends of the tube to support both ends of the heat insulating member and the heater.

In addition, the carrier gas inflow device may include:

A second engaging portion provided at one end of the first engaging portion and coupled to an inner circumference of one end of the tube of the vaporizing portion, and a second engaging portion provided at one end of the first engaging portion, A plurality of gas introduction grooves formed in the intermediate portion of the second coupling portion and formed in an annular groove, and a plurality of gas supply holes radially provided on one side wall of the gas introduction groove such that gas is supplied into the tube, A connection tube having a sphere formed therein;

A cover provided on the outer side of the gas inlet groove and a gas supply pipe having one end coupled to the cover to facilitate feeding of the carrier gas into the gas inlet groove.

In addition,

A first outlet having a nozzle at an end thereof so as to supply the reaction raw material gasified into the substrate processing facility;

And a second discharge port having a nozzle at an end thereof for discharging residual gas remaining in the vaporization unit when the thin film process of the substrate processing facility is completed.

The diameter of the nozzle provided in the first outlet is not less than 0.1 and not more than 2.0;

And the diameter of the nozzle provided at the second outlet is? 3 or more and? 7 or less.

In addition,

And a third discharge port which is provided under the same condition as the first discharge port and is provided so as to be able to be tested and discharged at the same pressure as the pressure of the gas supplied to the substrate processing facility.

In addition,

And a pipeline including one end connected to the vaporizing portion and the other end branched to the first and second outlets or the first, second and third outlets, respectively.

Further, the pipeline of the gas discharging portion may include:

And an opening control valve provided to discharge the source gas to one of the first and second outlets or the first, second and third outlets.

Further, the oscillation frequency of the oscillator is 40 to 400 kHz.

As described above, according to the present invention, there is an effect that the productivity of the substrate thin film formation is improved by effectively vaporizing the solution reaction raw material that has been made into fine particles by ultrasonic vibration.

In addition, there is an effect of maximizing the efficiency of forming a substrate thin film by supplying the vaporized liquid reaction raw material to the substrate processing equipment at a stable pressure.

Further, by rapidly discharging the remaining reaction material after the completion of one process, there is an effect of originally blocking the cause of the failure of the substrate in the next process.

In addition, by matching the pressure of the gas supplied to the substrate processing equipment so as to smoothly form the thin film, the cause of the defect in the formation of the thin film of the substrate is originally cut off and the productivity is improved have.

1 is a perspective view showing the outline of a first embodiment of a vaporizer for a substrate processing apparatus according to the present invention,
Fig. 2 is a cross-sectional view taken along the line " A " - " A " in Fig. 1 showing the internal structure of a vaporizer for a substrate processing apparatus according to the present invention,
Fig. 3 is a detail view of the line " B " of Fig. 2 locally enlarged
4 is a perspective view showing a second embodiment of a vaporizer for a substrate processing apparatus according to the present invention,
5A and 5B are perspective views showing a third embodiment of the vaporizer for a substrate processing apparatus according to the present invention,
6A and 6B are perspective views showing a fourth embodiment of the vaporizer for a substrate processing apparatus according to the present invention.

Referring to FIGS. 2 and 3, a vaporizer 10 (hereinafter referred to as a "vaporizer") for a substrate processing apparatus according to a first embodiment of the present invention includes an atomizing unit 100, (200) and a gas discharge unit (300).

The atomization unit 100 includes first and second cases 110 and 130, a reaction material introduction device 150 and a vibrator 170.

The first and second cases 110 and 130 have a box-like outer shape. The first case 110 has a cylindrical shape. One end of the first case 110 has a through-hole A through hole 111 is formed so as to facilitate this.

The other end opposite to the through hole 111 is opened to facilitate coupling with a second case 130, which will be described later, and a female screw 113 is formed on the inner periphery of the end.

The second case 130 is configured to be symmetrically coupled to the first case 110. The second case 130 has a cylindrical shape and has an outer periphery at one end thereof to facilitate screwing with the female screw 113 of the first case 110, And a mounting hole 133 is formed at the opposite end thereof.

A plurality of tabs 135 are radially formed on the outer periphery of the mounting hole 133 so as to facilitate bolt fastening with the first engaging portion 231a of the carrier gas inflow device 230 described later.

The reaction material inlet device 150 is provided in the center longitudinal direction of the first and second cases 110 and 130 thus coupled.

The reaction material inlet device 150 comprises an inlet pipe 151 and a nipple 153.

The inlet pipe 151 is provided at its one end with a coupling flange 151a for engaging with the second case 130 and both ends of the inlet pipe 151 are projected to both sides of the first and second cases 110 and 130. [

In addition, a nipple 153 is provided at one end of the inflow pipe 151 for facilitating the supply of the reaction raw material by a feeding device (not shown).

The vibrator 170 is provided at one side of the coupling flange 151a of the inlet pipe 151 of the reaction material inlet device 150 having the above-described structure.

The vibrator 170 is also referred to as a piezoelectric element as a piezoelectric element. Piezoelectric elements include quartz, tourmaline, rochelite, lead zirconate-titanite (PZT) Have been used as piezoelectric elements since early, and artificial crystals such as barium titanate, ammonium dihydrogen phosphate, and ethylene diamine tartarate, which have been recently developed, are also widely used.

The principle of such a piezoelectric element is a piezoelectric, which is a phenomenon in which positive and negative charges appear on both sides of a plate when pressure is applied to a certain kind of crystal plate in a certain direction, proportional to the external force.

Such a piezoelectric device has been proved to increase the amount of overlapping a plurality of sheets while inserting a metal foil. When electricity is applied to the piezoelectric device, vibration corresponding to the inherent frequency of the crystal plate is generated.

Therefore, since the reaction raw material supplied in the liquid state by the ultrasonic vibration of the vibrator 170 according to the present invention is atomized into a particulate state within 30 占 퐉, vaporization in the vaporization part 200 described later is easy.

It is preferable that the vibration frequency of the vibrator 170 is maintained in the range of 40 to 400 kHz so that the atomization can be easily performed in the fine particle state within 30 m.

The vaporization unit 200 is provided at one side of the atomization unit 100 as described above.

The vaporizing unit 200 includes a tube 201, a heater 210, a carrier gas inflow unit 230, a heat insulating member 240, and a clamp 250.

The tube 201 is a tube formed of a cylindrical shape and has one end connected to the carrier gas inflow device 230 to be described later and the other end provided with a tail 203. The end 203 and the gas discharge (Not shown).

A heater 210 is provided on the outer circumference of the tube 201. A heat insulating member 240 is provided on the outer circumference of the heater 210 to prevent heat loss of the heater 210, A cover 260 is provided.

The clamp 210 is provided at both ends of the tube 201 so that the flow of the heater 210, the heat insulating member 240, and the cover 260 is prevented and stably fixed.

The clamp 250 has a ring-shaped outer shape and is provided with a cutout 251 at one side and is fixed to both ends of the tube 201 by elasticity of the cutout 251 toward the inner diameter side.

Meanwhile, a carrier gas inflow device 230 is provided between the atomization unit 100 and the vaporization unit 200.

The carrier gas inlet device 230 includes a connection pipe 231, a cover 233, and a gas supply pipe 235.

The connection pipe 231 includes first and second coupling portions 231a and 231b and a through hole 231c and a gas inlet groove 231d and a gas inlet 231e.

The first coupling portion 231a is formed in a disk-like flange shape so as to be coupled to one end of the outer circumference of the second case 130 of the atomization portion 100 described above, and a bolt mounting groove 231aa is radially formed on the rim thereof .

The bolt BT inserted into the bolt receiving groove 231aa is screwed and fixed to the tab 135 formed in the second case 130 described above.

The second coupling portion 231b is formed in a cylindrical shape at one end of the first coupling portion 231a and is coupled to one end of a tube 201 of a vaporization portion 200 to be described later, (231a) and (231b).

A gas inlet groove 231d is formed at an intermediate portion of the second engaging portion 231b with an annular groove and a plurality of gas supply holes 231e are formed radially on one side wall of the gas inlet groove 231d, So that supply of the carrier gas into one tube 201 is facilitated.

One end of the gas supply pipe 235 is connected to the cover 233 and the gas inflow groove 231d and the gas supply port 231e are connected to each other. Thereby facilitating the supply of the carrier gas to the inside of the tube 201.

At least one gas discharging unit 300 having one end coupled to a tail wheel 203 provided at the tube end is provided to discharge the source gas vaporized to one side of the gasification unit 200 at a predetermined pressure.

The gas outlet 300 is formed of first and second outlets 310 and 330 which are connected to the first and second outlets 310 and 330 to supply gasified source gas to a substrate processing facility And the respective nozzles 311 and 331 are provided at the ends thereof.

The diameter of the nozzle 311 provided in the first discharge port 310 is not less than 0 and not more than 2.0 and the diameter of the nozzle 331 provided in the second discharge port 330 is not less than 3 and not more than 7.

The reason why the nozzles 311 and 331 having different diameters are provided is that most of the semiconductor process proceeds in a vacuum state under a very low pressure condition so that the vaporizer 10 according to the present invention also requires This is because it is necessary to operate in the proper pressure condition range.

Details will be described with reference to the experimental data in Table 1 below.

First, when the minimum pressure at which the liquid reaction material can be vaporized by the ultrasonic vibration of the vibrator 170 according to the present invention is 50 Torr or more and 50 Torr or less, the ultrasonic vibration of the vibrator 170 is neutralized, And as a result, the vaporization action associated with it is also practically difficult to achieve.

That is, the first discharge port 310 to which the diameter? 1 nozzle 311 is applied will be described by way of example. (See the thick line area)

When the carrier gas of 600 sccm (Standard Cubic centimeters per minute: cm 3 / min) is introduced into the vaporizing tube, that is, the vaporizing part 200 according to the present invention, and heated to 100 ° C. by the carrier gas, It is measured in the pressure gauge that basically the pressure of 51 Torr is reached in the state where the water of the reaction raw material is not yet introduced into the vaporizer.

Further, when the above-mentioned water is introduced and the ultrasonic vibration by the vibrator 170 according to the present invention acts, the water receiving the vibration energy is atomized into a fine particulate state and the amount of the introduced water (25,50,75 g / min) The amount of atomized fine particles increases proportionally.

In addition, as the vaporization effect is smoothly connected, the pressure value displayed on the pressure gauge increases in proportion to the amount of water flowing in and the amount of atomized fine particles.

Therefore, it is preferable to apply the diameter of the first outlet 310 according to the present invention to the range of? 0.1 to? 2.0 as described above by the test data as shown in Table 1.

The source gas discharged through the nozzle 311 of the first outlet 310 having a diameter as described above is pressurized to a pressure higher than the pressure of the substrate processing equipment (not shown) (typically about 0.1 to 5.0 Torr) , More specifically, 50 to 760 Torr, and is supplied into the substrate processing apparatus.

In other words, the appropriate pressure range inside the cylinder is 50 to 760 Torr.

Meanwhile, the second outlet 330 is connected to the second outlet 330 of the evaporator 10 in a state where the supply of the source gas through the first outlet 310 is completed, And is made to have a larger diameter than the first outlet 310 so that rapid discharge can be achieved regardless of the pressure.

The first and second outlets 310 and 330 are automatically opened and closed by having an opening / closing valve (for example, a solenoid valve) opened and closed by a controller (not shown).

Next, the operation and effect of the vaporizer 10 according to the present invention will be described with reference to the drawings.

At this time, the reaction material passing through the inlet pipe 151 of the reaction material inlet device 150 is supplied to the reaction material inlet device 150 through the reaction material inlet device 150, Fine particles of 30 μm or less are formed by ultrasonic vibration and are discharged to the inflow pipe 151.

At the same time, the carrier gas is introduced through the carrier gas inflow device 230. The carrier gas supplied to the gas inflow groove 231d through the connection pipe 231 is primarily filled in the gas inflow groove 231d Is supplied to the tube 201 of the gasification unit 200 through a gas supply port 231e formed radially on one side wall of the gas introduction groove 231d.

The supplied carrier gas facilitates vaporization of the reaction raw material maintained at a high temperature by the heater 240 of the vaporization part 200.

 (Hereinafter referred to as a source gas) is supplied to the substrate processing facility through the nozzle 311 of the first discharge port 310 at the same pressure as the pressure in the substrate processing facility in a vacuum state And the process proceeds.

When the process in the substrate processing facility is completed, the first discharge port 310 is closed by an open / close valve (for example, a solenoid valve) not shown and the supply of the source gas is stopped. At the same time, The nozzle 331 of the vaporizer 330 is opened and the reaction material and the carrier gas remaining in the tube 201 of the vaporizer 10 according to the present invention are discharged by a pump not shown.

At this time, the nozzle 331 provided in the second outlet 330 has a large diameter as described above, so that the remaining reaction material and the carrier gas can be quickly discharged.

Accordingly, the ultrasonic vibration generated in the vibrator 170 according to the present invention effectively vaporizes the liquid reaction raw material into fine particles, thereby improving the productivity of the substrate thin film formation. Pressure to maximize the efficiency of substrate thin film formation.

In addition, by rapidly discharging the remaining reaction material and carrier gas after the completion of one process, the causes of process defects that may occur in the next process are essentially blocked.

FIG. 4 shows a second embodiment of the vaporizer 10 according to the present invention, and further includes a third outlet 350 in the above-described structure.

As described above, the third outlet 350 is for discharging the test material until the condition of the source gas to be newly added is satisfied after the discharge of the residual reaction material and the carrier gas is completed, When the vaporization is completed, the third outlet 350 is automatically closed by an on-off valve (not shown), the first outlet 310 is opened, and the source gas is supplied to the substrate processing equipment, .

5A and 5B illustrate a third embodiment of the vaporizer 10 according to the present invention. The first, second and third outlets 310, 330, and 350 of the above- In the third embodiment, one pipeline P is provided and the first, second and third outlets 310 (first and second outlets 310 and 310) are provided at the ends of the pipeline P 330) 350 are branched from each other.

Hereinafter, the operation and effects of the vaporizer 10 according to the present invention are the same as those described above, so that a description thereof will be omitted.

6A and 6B show a fourth embodiment of the vaporizer 10 according to the present invention, which is a modification of the third embodiment described above.

That is, a throttle valve or a throttle valve is provided in the middle of the first and second outlets 310 and 330 or the first, second and third outlets 310, 330 and 350, And an opening control valve 400 composed of a piezo control valve. Openness here means openness.

That is to say, by controlling the opening degree of the opening control valve 400, it is possible to control the flow rate of the source gas to any one of the first and second outlets 310 and 330 or the first, second and third outlets 310, 330 and 350, .

On the other hand, the opening control valve 400 can achieve the desired object of the present invention by using a valve that can be automatically opened and closed by controlling a controller (not shown) other than the above-described throttle valve or piezo control valve, Of course.

It is to be understood that the present invention is not limited to the specific exemplary embodiments described above and that various modifications may be made by those skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims. And such modified embodiments are within the scope of the claims of the present invention.

10: vaporizer for substrate processing equipment 100: atomizer
110, 130: first and second cases 150: reaction material inlet device
170: Vibrator 200:
210: heater 230: carrier gas inlet device
240: Insulation member 250: Clamp
300: gas discharger 310, 330: first and second outlets
400: opening control valve

Claims (10)

A reaction material inlet device for injecting a liquid reaction material in a longitudinal direction of one end of the first and second cases through the center of the first and second cases, An atomizer having a vibrator for atomizing the reaction raw material introduced through the ultrasonic vibrator;
A heater provided on the outer periphery of the tubular tube in order to maintain the reaction raw material supplied in the atomized state in the atomized state at a high temperature, and a carrier gas for facilitating vaporization of the reaction raw material maintained at a high temperature by the heater A carrier gas introducing device for introducing the carrier gas into one end of the tube;
And at least one gas discharging part having one end connected to the tail end of the tube end so as to discharge the reaction raw material vaporized in the vaporizing part at a predetermined pressure. The method according to claim 1,
The reaction material inlet device comprises:
And an inlet pipe provided in a longitudinal direction of the center of the atomization unit and having a coupling flange at one end thereof for engaging with the second case. The method according to claim 1,
Wherein the vaporizing unit comprises:
A heat insulating member provided on the outer periphery to surround the outside of the heater and a clamp provided at both ends of the tube to support both ends of the heat insulating member and the heater. The method according to claim 1,
The carrier gas inlet device comprises:
A second engaging portion provided at one end of the first engaging portion and coupled to an inner circumference of one end of the tube of the vaporizing portion, and a second engaging portion provided at one end of the first engaging portion, A plurality of gas introduction grooves formed in the intermediate portion of the second coupling portion and formed in an annular groove, and a plurality of gas supply holes radially provided on one side wall of the gas introduction groove such that gas is supplied into the tube, A connection tube having a sphere formed therein;
A cover provided outside the gas inlet groove, and a gas supply pipe having one end coupled to the cover so as to facilitate supply of a carrier gas to the gas inlet groove. The method according to claim 1,
The gas discharger includes:
A first outlet having a nozzle at an end thereof so as to supply the reaction raw material gasified into the substrate processing facility;
And a second discharge port having a nozzle at an end thereof for discharging the remaining gas remaining in the vaporization unit when the thin film process of the substrate processing facility is completed. 6. The method of claim 5,
The diameter of the nozzle provided at the first outlet is not less than 0.1 and not more than 2.0;
And the diameter of the nozzle provided at the second outlet is? 3 or more and? 7 or less. 6. The method of claim 5,
The gas discharger includes:
Further comprising a third discharge port provided under the same condition as the first discharge port and provided so as to be able to be tested and discharged at the same pressure as the pressure of the gas supplied to the substrate processing facility. 6. The method of claim 5,
The gas discharger includes:
Further comprising a pipeline including one end connected to the vaporizing portion and the other end branched to branch the first and second outlets or the first, second and third outlets, respectively. 9. The method of claim 8,
The pipeline of the gas discharging portion includes:
Further comprising an opening control valve provided to discharge the source gas to one of the first, second, or first, second, and third outlets. The method according to claim 1,
Wherein the vibration frequency of the vibrator is 40 to 400 kHz.

Images