KR20150134080A - Fouced Ion Beam Apparatus - Google Patents

Abstract

The present invention provides a focused ion beam device. The device comprises: a chamber which maintains vacuum; a focused ion beam source which is vertically arranged to the chamber and provides an ion beam progressing in -z axis direction; an electronic beam source which is slantly arranged in the chamber and provides an electronic beam, which progresses at a predetermined angle to the ion beam, onto x-z plane; and a scanning stage which rotates on x-z plane around the cross point of the ion beam and the electronic beam.

Description

[0001] FOUNDED ION BEAM APPARATUS [0002]

FIELD OF THE INVENTION The present invention relates to a Fourier Ion Beam Apparatus (FIB Apparatus), and more particularly to a device incorporating an SEM-FIB.

Focused ion beam (FIB) technology is used to process nanometer-level static materials. Ions are generated by the gas at a high temperature or by short wavelengths of light such as electric discharge or ultraviolet rays. The ions are accelerated by the electric field, and the accelerated ions are in a high energy state. These high energy ions may be provided to the material to remove the surface of the material or to process the deposited material. The most widely used ion beam source is liquid-metal ion sources (LMIS). Gallium is mainly used as a liquid-metal ion source. When the FIB device irradiates the surface of the sample with a gallium ion beam, secondary electrons are generated. In addition, since gallium ions are heavier than electrons, atomic frame sputtering that constitutes a sample can be performed.

The gallium ion source has a low beam brightness. The beam brightness is the current density per unit solid angle. Since the gallium ion source has low beam brightness, it is suitable as a source for high resolution images. However, the gallium ion source is not suitable as an apparatus for surface processing because it has a small beam luminance.

Thus, recently, an induction plasma ion source having high beam luminance has been developed as an ion source. The inductively coupled plasma ion source is not constant in energy of the ion beam due to the fluctuation of the floating potential. An inductively coupled plasma ion source is disclosed in U.S. Patent Publication No. 2014 / 0077699A1. The inductively coupled plasma ion beam has a constant line width energy and has a large chromatic abberation during focusing. Therefore, the diameter of the beam is turned on after focusing, and precision machining is difficult.

Also, in an inductively coupled plasma ion source, when a deflection octopole using an electric field or a magnetic field is applied, there is a difficulty in space scanning due to the high beam luminance and the line width of the beam. Inductively coupled plasma ion sources require a new spatial scanning system.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a structurally simple FIB apparatus capable of processing a large sample.

A focused ion beam apparatus according to one embodiment of the present invention includes a chamber maintained in vacuum; A focused ion beam source disposed perpendicular to the chamber and providing an ion beam traveling in a -z axis direction; An electron beam source disposed in the chamber with an inclination and providing an electron beam traveling in the x-z plane at an angle with the ion beam; And a scanning stage rotating in an x-z plane about an intersection of the ion beam and the electron beam.

In one embodiment of the present invention, the focused ion beam source may be an inductively coupled plasma ion source.

In one embodiment of the present invention, the scanning stage includes: a y-axis stage that linearly moves in the y-axis direction in an xy plane perpendicular to the ion beam; An inclined stage mounted on the y-axis stage and rotating on a circumference having a constant radius around an intersection of the ion beam and the electron beam; A z-axis stage mounted on the inclined stage and moving in the z-axis direction; An x-axis stage mounted on the z-axis stage and moving in the x-axis direction; And a rotating stage mounted on the x-axis stage and providing rotational motion about the z-axis.

In one embodiment of the present invention, each of the y-axis stage, the tilting stage, the z-axis stage, the x-axis stage, and the rotating stage may be driven by respective motors disposed outside the chamber via links.

In one embodiment of the present invention, the y-axis stage includes a y-axis lower plate disposed in the xy plane; A lower y-axis rail fixedly coupled to the y-axis lower plate and extending in the y-axis direction; An upper y-axis rail slidably engaged with the lower y-axis rail and linearly moving in the y-axis direction; A y-axis upper plate fixedly coupled to the upper y-axis rail; And a y-axis driving unit for providing a force in the y-axis direction to the y-axis upper plate using a driving shaft having a bolt structure fixed to the y-axis lower plate and rotating and a nut unit having a nut structure.

In one embodiment of the present invention, the tilting stage is a worm mounted on the y-axis stage and rotating about an x-axis; A worm gear cut into an arc shape and engaged with the worm; An arc-shaped inclined rail mounted on the y-axis stage and having a constant radius; And a guide portion fixedly coupled to the worm gear and coupled to the inclined rail to guide the worm gear to change the polar angle.

In one embodiment of the present invention, the z-axis stage includes a reference plate mounted on the tilt stage and disposed in the xz plane; A z-axis reference rail extending in the z-axis direction fixedly coupled to the reference plate; A z-axis moving rail coupled to the z-axis reference rail and moving in the z-axis direction; A moving plate fixedly coupled to the z-axis moving rail; And a z-axis driving unit for providing a force in the z-axis direction to the moving plate using a driving shaft having a bolt structure fixed to the side surface of the reference plate and a nut having a nut structure.

In one embodiment of the present invention, the x-axis stage includes an x-axis lower plate fixedly coupled to the moving plate and disposed in the xy plane; An x-axis lower rail attached to the x-axis lower plate and extending in the x-axis direction; An x-axis upper rail coupled to the x-axis lower rail and moving in the x-axis direction; An x-axis top plate fixedly coupled to the x-axis upper rail; And an x-axis driving unit for providing a force in the x-axis direction to the x-axis upper plate by using a drive shaft having a bolt structure fixed to the upper surface of the x-axis upper plate and rotating and a nut unit having a nut structure.

In one embodiment of the present invention, the rotating stage includes a rotating worm mounted on the x-axis stage; And a rotating worm gear mounted on the x-axis stage and gear-coupled to the worm.

In one embodiment of the present invention, the apparatus may further include a gas injection unit injecting an inert gas at an intersection of the ion beam and the electron beam.

In one embodiment of the present invention, the angle of rotation of the inclined stage may be between -5 degrees and 95 degrees.

In one embodiment of the present invention, the focused ion beam source comprises an ion accelerator for generating an accelerated ion beam; And an Einzel lens for focusing an accelerated ion beam, and an ion beam gate valve may be disposed between the Einzel lens and the ion accelerator.

In one embodiment of the present invention, an exhaust gate valve connected to the chamber; A vibration damper connected to a rear end of the exhaust gate valve; A high vacuum pump connected to a rear end of the vibration damping unit; A first low vacuum valve connected to a rear end of the high vacuum pump; A second low vacuum valve connected to the chamber; And a low vacuum pump connected to a rear end of the second low vacuum valve and connected to a rear end of the second low vacuum valve.

The focused ion beam apparatus according to an embodiment of the present invention can process samples in the range of 10 to 1000 micron. Conventional FIB devices typically process a 10 nm level region. Therefore, in order to process a large area, an inductively coupled plasma ion source having high luminance was used as the ion beam source. On the other hand, a scanning stage has been developed for spatial scanning of an ion beam using a stage. The scanning stage is large. A conventional magnetic lens having a high magnification can interfere with the scanning stage. In order to reduce the interference, a very small electrostatic lens (Einzel lens) was used. The azimuth lens has a small structure without complicated structure, and a gate valve can be mounted between the electrostatic lens and the ion beam source. Accordingly, an exhaust structure using a single high vacuum pump without using a plurality of high vacuum pumps has been proposed.

1 is a perspective view illustrating a focused ion beam apparatus according to an embodiment of the present invention.
2 is a conceptual diagram illustrating the focused ion beam apparatus of FIG.
3 is a perspective view illustrating the scanning stage of FIG.
Figs. 4 to 6 are conceptual diagrams for explaining the operation principle of the scanning stage. Fig.

According to one embodiment of the present invention, a FIB device using an inductively coupled plasma ion source can be combined with a scanning electron microscope (SEM) device to perform ion milling and imaging simultaneously or continuously. The SEM device has its own electromagnetics spatial scanning system. On the other hand, FIB space scanning requires a stage that provides spatial scanning. However, the electron beam of the SEM and the ion beam of the FIB device cross each other at a predetermined angle. The stage provides spatial scanning for processing or imaging of the ion beam. In addition, the stage provides a function of changing the measurement position of the sample. The SEM device is a device

The stage may be changed in polar angle or tilt relative to the spherical coordinate system to provide a sample surface perpendicular to the SEM beam. On the other hand, when an inclined stage for changing the polar angle is used to change the polar angle, the position of the sample is arbitrarily changed, and the position of the sample is hardly specified.

Thus, a special stage is required for the coordinates of the spatial scanning of the FIB device to easily match the measurement coordinates for the SEM image. In a dual beam device according to an embodiment of the present invention, a special stage is provided that can use the same coordinates for any beam.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are being provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the components have been exaggerated for clarity. Like numbers refer to like elements throughout the specification.

1 is a perspective view illustrating a focused ion beam apparatus according to an embodiment of the present invention.

2 is a conceptual diagram illustrating the focused ion beam apparatus of FIG.

3 is a perspective view illustrating the scanning stage of FIG.

Figs. 4 to 6 are conceptual diagrams for explaining the operation principle of the scanning stage. Fig.

1 to 6, a focused ion beam apparatus 100 according to an embodiment of the present invention includes a chamber 10 maintained in vacuum, a chamber 10 vertically disposed in the chamber 10, , An electron beam source (30) disposed at an angle to the chamber (10) and providing an electron beam traveling in the xz plane at an angle with the ion beam, And a scanning stage (200) rotating in the xz plane about an intersection (F) of the ion beam and the electron beam.

The chamber 100 may be a seven-sided chamber. The chamber 100 may be chamfered along one side of the top of the rectangular hexahedron chamber. An electron beam source 30 may be mounted on one side of the chamfer. Also, a focused ion beam source 20 may be mounted on the upper surface of the chamber.

An optical microscope may be disposed on the chamfered surface of the chamber. The cross-section of the chamber in the xy plane may be pentagonal. A door 12 is disposed on one side and a surface on which the door 12 is mounted can face a side on which the window 14 is mounted. The surface on which the window 14 is mounted may be continuously connected to the chamfered surface. Power transmission parts 50 and 59 for transmitting power to the scanning stage can be mounted on the other side of the door 12 that is not facing the door 12. The power transmission unit may include a link 50 connecting the motor 59 and the driving unit of the stage. The link 50 may be a four-bar link or a five-bar link. The link may connect one stepping motor and one stage driving part.

The focused ion beam source (20) comprises an ion accelerator (21) for generating an accelerated ion beam; And an Einzel lens 23 for focusing the accelerated ion beam. The ion beam gate valve 47 may be disposed between the Einzel lens 23 and the ion accelerator 21. The ion accelerator 21 can generate a plasma through the inductively coupled plasma. In the generated plasma, ions are extracted through the ion extraction unit. The extracted ions are then accelerated through the electrodes. The accelerated ions are focused through the Einzel lens 23. The Einzel lens 23 may be composed of three electrodes arranged continuously. The Einzel lens may be mounted inside the connection part 22. The connection portion 22 may connect the ion beam gate valve and the through hole formed in the upper surface of the chamber.

The ion beam gate valve 47 can separate the ion accelerating section 21 and the Einzel lens 23 from each other. Accordingly, when the chamber 10 is kept at atmospheric pressure by the air, the ion beam gate valve 47 is closed, and the ion accelerating section 21 can maintain a low vacuum state. Meanwhile, while the ion accelerator 21 generates ions, the ion beam gate valve 47 is opened and can be pumped by the high vacuum pump 44 mounted in the chamber 10. The ion accelerating unit 21 generates an ion by discharging an inert gas such as xenon (Xe) injected to the outside. The pressure of the ion accelerator 21 may be several milli-torr or more, and the pressure of the chamber 10 may be 0.1 milli-torr or less.

When the deflection octopole is applied, the ion beam gate valve 47 is difficult to apply. However, when the deflection octopole is removed and the scanning stage 200 is used, the ion beam gate valve 47 can be used. Accordingly, a separate high vacuum pump used in the structure to which the deflection octopole is applied can be removed.

The electron beam source may be (30) an electron beam source used in a conventional scanning electron microscope (SEM). SEM is a device that generates a secondary electron by scanning a thin electron beam onto a sample to obtain a surface image of the sample. An electron beam having a diameter of 10 nm or less is injected into the sample. The sensing unit 34 collects secondary electrons generated from the sample. The electron beam may use scan coils for scanning.

The electron beam and the ion beam may be arranged in the xz plane. Specifically, the ion beam travels in the -z direction, and the electron beam can be incident at an angle of about 45 degrees with respect to the -z direction.

A typical focused ion beam source includes a Deflection Octopole for spatially scanning the beam. However, in the case of an inductively coupled plasma ion source, the plasma potential of the plasma fluctuates, so that the energy of the ion beam has a line width of about 10 eV. This wide line width ion beam is difficult to scan by Deflection Octopole. In addition, the ion beam of such a wide line width is difficult to be focused at one point by the magnetic lens.

According to one embodiment of the present invention, a scanning stage for a new space scanning is proposed, replacing the conventional Deflection Octopole, while using an inductively coupled plasma source.

When a double beam of an electron beam and an ion beam is used, an intersection of the path of the ion beam and the path of the electron beam is generated. The electron beam can be controlled through the electrostatic lens 33 to focus on the intersection. Further, the ion beam can be controlled to focus on the intersection through the Einzel lens 23. [ The scanning stage 200 includes an inclined stage 220. The inclined stage 220 may rotate in the x-z plane about the intersection of the ion beam and the electron beam. In this case, the ion beam can move on the moving axis of the scanning stage 200 to perform surface processing of the sample. After completion of the surface processing of the sample, the inclined stage 220 may be rotated at a predetermined inclination angle to obtain a surface image of the sample. In this case, the predetermined coordinates used for the surface machining can be used as the coordinates of the position for obtaining the SEM image. Therefore, an SEM image can be easily obtained. To this end, the center of rotation of the tilting stage may be initially aligned so as to coincide with the intersection of the path of the ion beam and the path of the electron beam.

The scanning stage 200 includes a y-axis stage 210 which linearly moves in the y-axis direction in an xy plane perpendicular to the ion beam, a scanning unit 200 mounted on the y- A z-axis stage 230 mounted on the inclined stage and moving in the z-axis direction, an x-axis stage mounted on the z-axis stage and moving in the x-axis direction, (240), and a rotation stage (250) mounted on the x-axis stage and providing rotational motion about the z-axis.

Each of the y-axis stage 210, the tilting stage 220, the z-axis stage 230, the x-axis stage 240 and the rotation stage 250 is disposed outside the chamber 10 via the link 50 (Not shown).

The y-axis stage 210 includes a y-axis lower plate 211 disposed in the xy plane, a lower y-axis rail 212 fixedly coupled to the y-axis lower plate 211 and extending in the y- A y-axis upper plate 214 fixedly coupled to the upper y-axis rail, and a drive shaft (not shown) fixedly coupled to the y-axis lower plate and rotated in a y- And a y-axis driving unit 215 for applying a force in the y-axis direction to the y-axis upper plate 214 using the nut portion 215c having the nut structure.

The y-axis lower plate 211 is disposed in the xy plane, and may be a square plate. The lower y-axis rail 212 and the upper y-axis rail 213 extend in the y-axis direction side by side while being in contact with each other, and can slide with each other. The lower y-axis rail 212 is fixedly coupled to the y-axis lower plate, and the upper y-axis rail 213 is coupled to the y-axis upper plate. The lower y-axis rail 212 and the upper y-axis rail 213 may be two pairs. The y-axis top plate can be moved in the y-axis direction by the y-axis driving unit 215 in the form of a square plate.

The y-axis drive unit 215 may include a support unit 215a for supporting the drive shaft 215b at both ends thereof. The support portion 215a may be fixed at the edge of the y-axis lower plate 211. [ As the drive shaft 215b rotates through the link 51, the nut portion 215c can move in the y-axis direction along the drive shaft. The fixing portion 215d fixedly coupled to the nut portion may be fixed to the y-axis upper plate 214. [ Accordingly, the y-axis upper plate 214 can be moved. The leak 51 may rotate the drive shaft 215b.

When the y-axis stage 210 moves, the intersection F of the ion beam and the electron beam is not changed. Thus, the y-axis stage 210 may be used for initial alignment. Alternatively, after the y-axis stage 210 returns to the initial position, the inclined stage may be rotated.

The inclined stage 220 includes a worm 221 mounted on the y-axis upper plate 214 and rotating about the x axis, a worm gear 222 cut into an arc shape and engaged with the worm 221, An arc-shaped inclined rail 223 mounted on the shaft stage 210 and having a predetermined radius, and an inclined rail 223 fixedly coupled to the worm gear 222 and coupled to the inclined rail 223 to change a polar angle And a guide part 225 for guiding the guide part 225.

 The angle of rotation (?) Of the inclined stage 220 may be between -5 degrees and 95 degrees. The angle of rotation of the inclined stage 220 may be defined as an angle between the traveling direction of the ion beam and the perpendicular direction of the sample plane.

 The worm 221 is in the form of a male screw, and both ends of the shaft of the worm can be fixed to the support portion 226. The support 226 may provide rotational movement of the worm 221 through the bay ring. The support portion 226 may be fixed at the edge of the y-axis top plate 214. The worm gear 222 may have an arc shape in which a circumference of a predetermined radius is cut. The center angle of the arc may be 90 to 110 degrees. The inclined rail 223 may be fixed to the y-axis upper plate 214. The inclined rail may have an arcuate shape and have a central angle such as the worm gear. The guide part 225 may rotate along the slope rail 223 as the worm gear 222. The center of rotation of the worm gear 222 may coincide with the intersection F of the electron beam and the ion beam. The inclined rail 223 is supported by an inclined rail support (not shown), and the inclined rail support can be fixed to the y-axis upper plate. The inclined rails 223 may be two, and may be disposed to be spaced apart from each other in the y-axis direction. The arrangement plane of the inclined rail 223 may be an xz plane. The link 52 can rotate the worm 221.

The tilting stage 220 may be used to measure an SEM image. Alternatively, the tilting stage 220 can be used when a three-dimensional object (e.g., a screw) is processed using an ion beam.

The z-axis stage 230 includes a reference plate 231 fixed to the guide unit 225 and disposed in the xz plane, a z-axis reference rail (not shown) extending in the z-axis direction fixedly coupled to the reference plate 231 A z-axis moving rail 233 coupled to the z-axis reference rail 232 and moving in the z-axis direction, a moving plate 234 fixedly coupled with the z-axis moving rail 233, And a z-axis driving unit 235 that provides a force in the z-axis direction to the moving plate using a driving shaft having a bolt structure fixedly coupled to the side surface of the moving plate 231 and a nut unit having a nut structure.

The reference plate 231 is disposed in the xz plane and is fixedly coupled to the guide unit 225. Accordingly, as the polar angle of the reference plate 225 changes, the reference plate 231 rotates. As the reference plate 231 rotates, the center portion of the y-axis upper plate 214 may be depressed without engaging the reference plate 231 with the y-axis upper plate 214. The z-axis reference rail 232 is fixed to the reference plate 231 and can extend in the z-axis direction. In addition, the z-axis moving rail 233 and the z-axis reference rail 232 can be locally extended and engaged with each other while sliding. The z-axis moving rail 233 can be fixedly coupled to the moving plate 234. [ The z-axis moving rail and the z-axis reference rail may be two pairs. A pair of each of the z-axis moving rails and the z-axis reference rail may be disposed apart from the other pair of the z-axis moving rails and the z-axis reference rails in the x-axis direction.

The z-axis driving unit 235 includes a link guide unit 235a fixed to the side surface of the reference plate 231, a first bevel gear (not shown) coupled to the link guide unit 235a, A vertical drive shaft 235d for receiving the rotational force of the second bevel gear 235b and a second drive shaft 235b for transmitting the rotational force while supporting the vertical drive shaft 235d, And a power transmitting portion 235e that receives the rotational force of the vertical driving shaft 235d and transmits power to the moving plate 234. The vertical driver 235d has a bolt shape. Accordingly, the vertical support 235c can maintain its position despite the rotation of the vertical drive through the bearing. The vertical support 235c may be fixedly coupled to the side surface of the reference plate 231. [ The power transmitting portion 235e may receive a rotational force from the screw-shaped vertical driving portion to provide vertical movement to the moving plate. The link may rotate the first bevel gear.

The x-axis stage 240 includes an x-axis lower plate 241 fixed to the moving plate 234 and disposed in the xy plane, an x-axis lower rail 242 mounted on the x-axis lower plate and extending in the x- An x-axis upper rail 243 coupled to the x-axis lower rail and moving in the x-axis direction, an x-axis upper plate 244 fixedly coupled to the x-axis upper rail, And an x-axis driving unit 245 for providing a force in the x-axis direction to the x-axis upper plate by using a drive shaft of a rotating bolt structure and a nut unit of a nut structure.

The x-axis lower plate 241 disposed on the xy plane can be fixedly coupled to the moving plate 234 of the z-axis stage. Accordingly, when the z-axis stage performs the z-axis movement, the x-axis lower plate 241 may be moved together. An x-axis lower rail 242 may be mounted on the x-axis lower plate 241 so as to extend in the x-axis direction. The x-axis lower rail 242 can be fixedly coupled to the x-axis lower plate 241. The x-axis upper rail 243 may be mounted on the x-axis upper plate 244 so as to extend in the x-axis direction. The x-axis upper rail 243 and the x-axis lower rail 242 may be slidably coupled with each other in the x-axis direction.

The x-axis driving unit 245 may include a first bevel gear 245b and a second bevel gear 245c gear-coupled with the first bevel gear 245b. The central axis of the first bevel gear 245b may be arranged in the y-axis direction, and the central axis of the second bevel gear 245c may be arranged in the x-axis direction. The first bevel gear 245b may be supported by the first bevel gear support 245a. The first bevel gear support portion 245a may be fixedly coupled to the x-axis lower plate 241 directly or indirectly. The second bell gear 245c rotates the screw shaft 245e. The x drive shaft 245e may have a bolt shape. The portion 245f receiving the nut-shaped rotational force can be fixedly coupled to the x-axis upper plate 244. [ Both ends of the x drive shaft 245c may be fixed by a support portion 245d including a bearing. The link 54 may rotate the first bevel gear 245b.

The rotary stage 250 includes a rotary worm 251 mounted on the x-axis upper plate 244 of the x-axis stage and a rotary worm gear 252 mounted on the x-axis stage and engaged with the rotary worm 251, . ≪ / RTI > The rotary worm 251 may extend in the y-axis direction. The rotary worm 251 is mounted on the x-axis upper plate 244, and both ends of the rotary worm 251 can be supported through bearings. The rotary worm gear 252 can rotate 360 degrees about the z axis in a disk shape, and the rotary shaft can be fixed to the x-axis upper plate 244. The rotating worm gear 252 may be disposed in the xy plane. Means capable of mounting a sample can be mounted on the upper portion of the rotating worm gear 252. The rotating worm 251 may receive rotational force from the motor via the link 55.

An exhaust gate valve may be connected to the chamber to evacuate the chamber. The operating pressure of the chamber is preferably 0.1 milliTorr or less. The exhaust gate valve may be connected through a port formed in the lower surface of the chamber.

A vibration damper may be connected to a rear end of the exhaust gate valve. Accordingly, the vibration damping portion can suppress transmission of the vibration energy generated in the high vacuum pump or the low vacuum pump to the chamber. The high vacuum pump may be connected to the rear end of the vibration damping portion. The high vacuum pump may be a large-capacity turbo molecular pump (TMP). The rear end of the high vacuum pump may be connected to a low vacuum pump. Further, a first low vacuum valve may be disposed between the high vacuum pump and the low vacuum pump. In addition, the second low vacuum valve may be connected to the chamber through a separate exhaust line. The second low vacuum valve may be connected to the low vacuum pump.

The first pressure gauge 47 measures the pressure of the chamber, and the second pressure gauge 48 measures the pressure of the rear end of the high vacuum pump.

According to one embodiment of the present invention, the entire system can be operated using one high vacuum pump and one low vacuum pump. Specifically, the exhaust gate valve and the ion beam gate bur are closed, and the door of the chamber is opened, and the sample is loaded.

Subsequently, as the second low vacuum valve is opened, the low vacuum pump pumps the chamber to a low vacuum.

Subsequently, the second low vacuum valve is closed, the exhaust gate valve is opened, and the first gate valve is opened. Accordingly, the high vacuum pump and the low vacuum pump pump the chamber to a low vacuum.

Then, the ion beam gate valve is opened and an ion beam is irradiated onto the sample. When the sample processing is completed, the ion beam gate valve is closed again. Therefore, the high vacuum pump always operates in the ON state, and the load of the high vacuum pump is reduced. In addition, it is possible to maintain a stable FIB system in vacuum.

Ion beams are not scanned using Deflection Octopole. Therefore, the intensity or brightness of the ion beam is constant, and the incident angle to the sample is constant. Stable ion milling can be performed because the ion beam has a different etching rate or sputtering rate depending on the incident angle.

  According to a modified embodiment of the present invention, when the surface is ground using the ion beam, another gas can be injected into the focus of the ion beam. The gas jetting unit 18 may inject an inert gas at an intersection of the ion beam and the electron beam. In this case, the inert gas is injected only into the focal point of the ion beam, and the injected gas can collide with the ion beam. Accordingly, the ion beam can scatter and sputter an area other than the focus. Therefore, the surface of the sample can be uniformly ground. The inert gas may be an inert gas such as xenon, argon, or krypton.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And all of the various forms of embodiments that can be practiced without departing from the technical spirit.

10: chamber
20: ion beam source
30: electron beam source
200: scanning stage

Claims (13)

A chamber maintained in vacuum;
A focused ion beam source disposed perpendicular to the chamber and providing an ion beam traveling in a -z axis direction;
An electron beam source disposed in the chamber with an inclination and providing an electron beam traveling in the xz plane at an angle with the ion beam; And
And a scanning stage rotating in an xz plane about an intersection of the ion beam and the electron beam. The method according to claim 1,
Wherein the focused ion beam source is an inductively coupled plasma ion source. 3. The method according to claim 1 or 2,
The scanning stage includes:
A y-axis stage linearly moving in the y-axis direction in an xy plane perpendicular to the ion beam;
An inclined stage mounted on the y-axis stage and rotating on a circumference having a constant radius around an intersection of the ion beam and the electron beam;
A z-axis stage mounted on the inclined stage and moving in the z-axis direction;
An x-axis stage mounted on the z-axis stage and moving in the x-axis direction; And
And a rotating stage mounted on the x-axis stage and providing rotational motion about a z-axis. The method of claim 3,
wherein each of the y-axis stage, the tilting stage, the z-axis stage, the x-axis stage, and the rotation stage is driven by a corresponding motor disposed outside the chamber via a link. The method of claim 3,
The y-axis stage is:
a y-axis bottom plate disposed in the xy plane;
A lower y-axis rail fixedly coupled to the y-axis lower plate and extending in the y-axis direction;
An upper y-axis rail slidably engaged with the lower y-axis rail and linearly moving in the y-axis direction;
A y-axis upper plate fixedly coupled to the upper y-axis rail; And
And a y-axis driving unit for providing a force in the y-axis direction to the y-axis upper plate by using a driving shaft having a bolt structure fixed to the y-axis lower plate and rotating and a nut unit having a nut structure. The method of claim 3,
The inclined stage comprises:
A worm mounted on the y-axis stage and rotating about an x-axis;
A worm gear cut into an arc shape and engaged with the worm;
An arc-shaped inclined rail mounted on the y-axis stage and having a constant radius; And
And a guide unit fixedly coupled to the worm gear and coupled to the inclined rail to guide a change in polar angle. The method according to claim 6,
The z-axis stage includes:
A reference plate mounted on the inclined stage and disposed in the xz plane;
A z-axis reference rail extending in the z-axis direction fixedly coupled to the reference plate;
A z-axis moving rail coupled to the z-axis reference rail and moving in the z-axis direction;
A moving plate fixedly coupled to the z-axis moving rail; And
And a z-axis driving unit for providing a force in the z-axis direction to the moving plate by using a drive shaft having a bolt structure fixed to the side surface of the reference plate and rotating and a nut part having a nut structure. 8. The method of claim 7,
The x-axis stage is:
An x-axis lower plate fixedly coupled to the moving plate and disposed in an xy plane;
An x-axis lower rail attached to the x-axis lower plate and extending in the x-axis direction;
An x-axis upper rail coupled to the x-axis lower rail and moving in the x-axis direction;
An x-axis top plate fixedly coupled to the x-axis upper rail; And
And an x-axis driving unit for providing a force in the x-axis direction to the x-axis upper plate using a drive shaft having a bolt structure fixed to the upper surface of the x-axis upper plate and rotating and a nut unit having a nut structure. Beam device. 9. The method of claim 8,
The rotating stage comprises:
A rotary worm mounted on the x-axis stage; And
And a rotating worm gear mounted on the x-axis stage and gear-coupled to the worm. The method according to claim 1,
Further comprising a gas injection unit injecting an inert gas at an intersection of the ion beam and the electron beam. The method according to claim 1,
Wherein the rotation angle of the inclined stage is in the range of -5 to 95 degrees. The method according to claim 1,
The focused ion beam source
An ion accelerator for generating an accelerated ion beam; And
And an Einzel lens for focusing the accelerated ion beam,
And an ion beam gate valve is disposed between the Einzel lens and the ion accelerating unit. The method according to claim 1,
An exhaust gate valve connected to the chamber;
A vibration damper connected to a rear end of the exhaust gate valve;
A high vacuum pump connected to a rear end of the vibration damping unit;
A first low vacuum valve connected to a rear end of the high vacuum pump;
A second low vacuum valve connected to the chamber; And
Further comprising a low vacuum pump connected to a downstream end of the second low vacuum valve and connected to a downstream end of the second low vacuum valve.

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