JP4149249B2 - Ion implantation method, ion implantation apparatus, and beam transport tube for ion implantation apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an ion implantation method, an ion implantation apparatus, and a beam transport tube for an ion implantation apparatus. More specifically, the present invention relates to a substrate to be processed in order to control the range and implantation distribution of implanted ions in the substrate to be processed. The present invention relates to an ion implantation method in which ions are inclined and implanted, an ion implantation apparatus, and a beam transport tube for the ion implantation apparatus.
[0002]
[Prior art]
In recent ion implantation, when a crystalline substrate such as a silicon wafer or a gallium-arsenic substrate is used as a substrate to be processed, the depth distribution of dopants such as boron (B), phosphorus (P), and arsenic (As) with respect to the substrate Therefore, the ion implantation is performed by controlling the ion implantation angle with respect to the substrate to be processed.
[0003]
Therefore, in a conventional ion implantation apparatus, a tilting mechanism for a substrate to be processed is provided on a stage or a platen that holds the substrate to be processed, and the ion implantation angle of the substrate to be processed is controlled by adjusting the tilting mechanism. ing.
[0004]
Further, in recent years, as shown in FIG. 11, the incident angle θ of the ion beam IB with respect to the substrate to be processed W can be arbitrarily set, and the substrate S can be rotated intermittently or continuously. In addition, an ion implantation apparatus provided with a rotation mechanism has become mainstream (see Patent Document 1 below). In the figure, symbol T is a shutter for dividing the ion implantation region of the substrate W to be processed.
[0005]
On the other hand, a conductive mask member (hereinafter also referred to as “stencil mask”) having an opening for defining an ion implantation region is disposed opposite to the substrate to be processed, and an ion beam is applied to the surface of the substrate to be processed through the stencil mask. An ion implantation apparatus that performs irradiation and ion implantation is known (see Patent Document 2 below). In this ion implantation apparatus, the process of forming a resist mask on the substrate to be processed, which has been conventionally required, is unnecessary, and a desired ion implantation process can be performed only by exchanging the stencil mask. Cost reduction can be achieved.
[0006]
[Patent Document 1]
JP-A-9-245722 [Patent Document 2]
Japanese Patent Laid-Open No. 2002-176005
[Problems to be solved by the invention]
[0008]
However, in order to control the depth distribution of implanted ions, if a tilting mechanism or a rotating mechanism is provided on the stage that holds the substrate to be processed, there is a problem that the stage structure becomes complicated and the apparatus cost increases. .
[0009]
Even when ion implantation is performed on a substrate to be processed using a stencil mask, if the stage is tilted and rotated in order to control the ion implantation angle, the stencil mask disposed opposite to the substrate to be processed is also Since it becomes necessary to tilt and rotate under the same conditions as the stage, there is a problem that the mechanism for holding the stencil mask becomes complicated and large.
[0010]
In addition to this, since the stencil mask needs to be arranged with a gap of about several tens of μm with respect to the substrate to be processed, a high-accuracy positioning mechanism is required to ensure in-plane uniformity of the gap. Become. In addition, when ion implantation is performed on a substrate to be processed in units of one element using a stencil mask, positioning accuracy in the rotation direction between the substrate to be processed and the stencil mask is also required.
[0011]
The present invention has been made in view of the above-described problems, and can control the ion implantation angle without complicating the configuration of the stage for holding the substrate to be processed. Even when ion implantation is performed using a stencil mask, the present invention can be applied. It is an object of the present invention to provide an ion implantation method, an ion implantation apparatus, and a beam transport tube for an ion implantation apparatus that can control an ion implantation angle without requiring high positioning accuracy between a processing substrate and a stencil mask.
[0012]
[Means for Solving the Problems]
In solving the above problems, the ion implantation method of the present invention is an ion implantation method in which ions are implanted by irradiating a substrate to be processed with a deflector, and the deflection is performed with respect to a stationary substrate to be processed. A tilting step of tilting the beam exit surface of the vessel, and an implantation step of irradiating an ion beam from the tilted beam exit surface and implanting ions into the substrate to be processed.
[0013]
That is, the ion implantation method of the present invention differs greatly from the conventional method in which the incident angle of the ion beam is set by tilting the stage that holds the substrate to be processed in adjusting the ion implantation angle. Ion implantation is performed with the beam exit surface of the deflector to be inclined with respect to the substrate to be processed. According to the present invention, no stage tilting mechanism is required, and the configuration of the stage can be greatly simplified.
[0014]
Further, when ion implantation is performed using a stencil mask, the substrate to be processed is always stationary during the ion implantation, so that a highly accurate positioning mechanism for the stencil mask is not required.
[0015]
On the other hand, an ion implantation apparatus of the present invention includes a beam transport unit that mass-separates ions extracted from an ion source in a high-voltage terminal and converges and deflects an ion beam, and a stage that supports a substrate to be processed. A parallel movement mechanism for moving the beam transport portion parallel to the upper surface of the stage, and a rotation mechanism for tilting the beam exit surface of the beam transport portion with respect to the upper surface of the stage. Features.
[0016]
According to the present invention, the beam exit surface of the beam transport unit that irradiates the ion beam to the substrate to be processed fixed on the stage is set to an arbitrary angle with respect to the substrate to be processed by the parallel movement mechanism and the rotation mechanism. Since it can be inclined, a desired ion implantation angle can be given to the region on the substrate to be processed. This makes it possible to arbitrarily set the ion implantation angle with respect to the substrate to be processed without tilting the stage.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0018]
1 and 2 are a side view and a plan view of an ion implantation apparatus 1 according to an embodiment of the present invention, and FIG. 3 is an overall schematic diagram illustrating the internal configuration of the ion implantation apparatus 1.
[0019]
The ion implantation apparatus 1 according to the present embodiment includes a mass separator 12 and a beam converging unit between a high-voltage terminal 11 that houses an ion source 2 and an end station 15 that positions and holds a semiconductor substrate W as a substrate to be processed. A beam transport tube 21 having a configuration in which a device 13 and a deflector 14 are sequentially connected in series is provided.
[0020]
The beam transport tube 21 according to the present invention has a function of mass-separating ions extracted from the ion source 2 and focusing and deflecting the ion beam to irradiate the semiconductor substrate W. It also has a function of controlling the incident angle of the ion beam.
[0021]
First, a schematic configuration of the ion implantation apparatus 1 will be described with reference to FIG.
[0022]
An ion source 2 is installed at the high voltage terminal 11. As the ion source 2, a hot cathode type ion source such as a Bernas type or a Freeman type, an ECR (electron cyclotron resonance) type ion source, or the like is used. Ions extracted from the ion source 2 are accelerated to a predetermined energy by the acceleration tube 3 and introduced into the mass separator 12.
[0023]
The mass separation unit 12 is provided with an electromagnet (not shown) for mass-separating ions accelerated by the accelerating tube 3, and extracts only ions of a target mass number to the beam converging unit 13 at the subsequent stage. Introduce.
[0024]
In the beam converging unit 13, the ion beam has a predetermined diameter by the variable aperture 4. The converging lens 5 is for converging the ion beam, and the beam scanner 6 is for scanning the ion beam at a minute angle. The converging lens 5 and the beam scanner 6 are composed of, for example, electrostatic or magnetic quadrupole lenses.
[0025]
The deflector 14 functions as a collimator lens for collimating the ion beam and leading it to the end station 15 side, and at the same time, removes ions and neutral particles whose charges have changed by colliding with the residual gas in the beam path. . Details of the configuration of the deflector 14 will be described later.
[0026]
In the end station 15, for example, a stage 8 that holds a semiconductor substrate W is installed as a substrate to be processed. The stage 8 is movable in the X direction, the Y direction, and the Z direction by the XYZ drive mechanism 7 inside the end station 15. Above the semiconductor substrate W, a stencil mask 9 having an opening 9a for defining an ion implantation region is disposed oppositely through a gap G of about 10 to 20 μm, for example.
[0027]
In the ion implantation apparatus 1 according to the present embodiment, as described above, the beam transport tube 21 including the mass separator 12, the beam converging unit 13, and the deflector 14 has an ion beam incident angle with respect to the semiconductor substrate W. It has a function to control.
[0028]
4A to 4C are front views of the deflector 14 schematically showing a control procedure of the incident angle θ of the ion beam IB with respect to the semiconductor substrate W on the stage 8 by the beam transport tube 21.
[0029]
As shown in FIG. 4A, initially, the beam exit surface 14a of the deflector 14 is set at a position parallel to the semiconductor substrate W on the stage 8. Since the ion beam IB irradiated to the semiconductor substrate W from the deflector 14 is emitted perpendicularly to the beam exit surface 14a of the deflector 14, the ion beam IB is directed to the semiconductor substrate W in the state shown in FIG. 4A. Incident vertically. At this time, the ion implantation angle with respect to the semiconductor substrate W is 90 °.
[0030]
Therefore, in order to incline the direction of ion implantation into the semiconductor substrate W, the beam transport tube 21 including the deflector 14 is translated by a predetermined distance with respect to the semiconductor substrate W on the upper surface of the stage 8 as shown in FIG. As shown in FIG. 4C, control is performed to rotate the deflector 14 by an angle θ. As a result, the beam exit surface 14 a of the deflector 14 is inclined by an angle θ with respect to the semiconductor substrate W, so that the ion beam IB emitted from the beam exit surface 14 a is θ with respect to the normal direction of the semiconductor substrate W. It is irradiated at an incident angle.
[0031]
As described above, the ion implantation angle θ with respect to the semiconductor substrate W is controlled. The injection angle θ can be adjusted within a range of 7 ° to 30 °, for example.
[0032]
The rotating operation of the deflector 14 is performed independently from the mass separator 12 and the beam converging device 13. Further, the axial center position of the rotation operation of the deflector 14 is set to the beam axis of the ion beam IB passing through the beam converging device 13, thereby eliminating the vertical fluctuation of the beam line due to the rotation of the deflector 14. ing. Hereinafter, a specific configuration for causing the beam transport tube 21 to perform the above-described operation will be described.
[0033]
First, the parallel movement mechanism of the beam transport tube 21 will be described.
[0034]
As shown in FIG. 2, the parallel movement of the beam transport tube 21 is performed by integrating the mass separator 12, the beam converging device 13, and the deflector 14 that constitute the beam transport tube 21. Among these, the mass separator 12 and the beam converging unit 13 are installed on a common base 22, and are driven by guide motors M1 and M2 such as pulse motors along guide rails 23A and 23B laid on the base 22, respectively. It can be translated. One deflector 14 is installed on a dedicated base 24 and can be translated by a drive motor M3 such as a pulse motor along a guide rail 25 laid on the base 24.
[0035]
The drive motors M1 to M3 and the guide rails 23A, 23B, and 25 constitute a “parallel movement mechanism” according to the present invention. The entire beam transport tube 21 may be installed on a single base, or may be translated by a single drive motor.
[0036]
The parallel movement direction of the beam transport tube 21 is an acceleration direction of ions by the acceleration tube 3, that is, an ion extraction direction from the high voltage terminal 11. Although the acceleration tube 3 is integrally fixed to the side wall of the high voltage terminal 11, the acceleration tube 3 and the mass separator 12 are connected to each other by a bellows pipe 17 which is a telescopic vacuum pipe. The relative movement of the beam transport tube 21 with respect to 3 is enabled.
[0037]
Note that the bellows pipes 18, 19, and 20 are also connected between the mass separator 12 and the beam converging unit 13, between the beam converging unit 13 and the deflector 14, and between the deflector 14 and the end station 15, respectively. However, the connection between the former two may be constituted by a non-stretchable vacuum pipe.
[0038]
5 to 8 show the configuration of the deflector 14 constituting the beam transport tube 21. Here, FIG. 5 is a plan view of the deflector 14, FIG. 6 is a side view thereof, A shows a state before rotation, and B shows a state after rotation. 7A and 7B are diagrams showing the configuration and operation of an actuator that rotates the deflector 14, and FIG. 8 is a cross-sectional view showing the internal structure of the deflector 14. FIG. Hereinafter, the configuration of the deflector 14 will be described.
[0039]
The deflector 14 includes a housing 31 in which a vacuum chamber 32 is defined. A pair of electromagnets 30 are arranged opposite to each other on the inner wall surface of the vacuum chamber 32, and the ion beam IB introduced from the right side in FIG.
[0040]
The casing 31 is supported at the approximate center of a square base 24 configured to form a void 26 inward. Rotating shafts 35a and 35b are connected to the left and right side surface portions of the casing 31 in FIG. 5, and these axial centers are aligned with the beam axis of the ion beam IB introduced into the casing 31. Is arranged. The internal space of one rotating shaft 35 a constitutes a part of the beam transport path and communicates with the vacuum chamber 32.
[0041]
On the other hand, guide rails 25a and 25b are laid on both the left and right sides of the base 24 in FIG. 5, and a pair of movable plates 33a and 33b movable via the linear guides 27a and 27b are arranged thereon. Yes. Side plates 34a and 34b are erected on the upper surfaces of the movable plates 33a and 33b, and rotary shafts 35a and 35b connected to the casing 31 are rotatably supported at the upper ends of the side plates 34a and 34b. ing.
[0042]
Ball screws 29a and 29b are connected to the movable plates 33a and 33b, and the driving force of the driving motor M3 is transmitted through the gear boxes 37a and 37b and the connecting shaft 36. Thus, a parallel movement mechanism of the deflector 14 is configured to convert the rotational driving force of the drive motor M3 into the parallel movement of the movable plates 33a and 33b.
[0043]
Next, the rotation mechanism of the deflector 14 will be described. The turning mechanism of the deflector 14 includes turning shafts 35a and 35b and a pair of actuators 40a and 40b that press the casing 31 around the turning shafts 35a and 35b.
[0044]
The actuators 40a and 40b are fixed on support plates 38a and 38b arranged at upper end portions of the movable plates 33a and 33b in FIG. Directly above the actuators 40a and 40b are blade plates 39a and 39b that project laterally from the outer wall surface of the casing 31 in FIG. 5, and are driven by the actuators 40a and 40b via the blade plates 39a and 39b. Then, as shown in FIG. 6B from the state shown in FIG. 6A, the casing 31 is lifted upward and rotated around the rotation shafts 35a and 35b.
[0045]
FIG. 7 is a diagram schematically showing a configuration of a main part of the actuator 40b, in which A indicates before the casing 31 is rotated and B indicates after the rotation. The actuator 40b is provided between the base 24 and the casing 31 via the two pin members 41 and 42, and the casing 31 is moved by the vertical movement of the lever 43 disposed between the pin members 41 and 42. Is configured to rotate.
[0046]
One pin member 41 is provided between the pin receiving portion 44 on the base 24 and the base plate 46 of the actuator 40b. The other pin member 42 is provided between the pin receiving portion 45 of the blade 39 b of the casing 31 and the lever 43 of the actuator 40 b. The base plate 46 is fixed integrally with the main body 48 of the actuator 40 b and accommodates a drive gear 47 that meshes with a gear portion 43 a formed on the side of the lever 43. The lever 43 is movable up and down with respect to the main body 48 by receiving the rotational driving force of the driving gear 47 connected to the motor 49.
[0047]
The actuator 40a on the other side is configured in the same manner as described above. As shown in FIG. 7A, when the initial position of the lever 43 is inclined with respect to the base 24, the casing 31 can be rotated more smoothly than when the lever 43 is arranged vertically. Can do.
[0048]
As described above, the rotation shafts 35a and 35b and the actuators 40a and 40b constitute the “rotation mechanism” according to the present invention. The rotation amount of the deflector 14 (housing 31) by this rotation mechanism can be controlled by the rotation amount of the drive gear 47. In the present embodiment, a scale indicating the rotation amount (angle) is displayed at the end of the rotation shaft 35b, and the rotation amount is checked using an imaging means such as a CCD (Charge Coupled Device). Like to do.
[0049]
FIG. 8 is a cross-sectional view schematically showing the internal structure of the deflector 14. The ion beam IB introduced into the deflector 14 crosses the magnetic field formed by the magnetic poles of the pair of electromagnets 30 and 30 that are arranged to face each other with the vacuum chamber 32 interposed therebetween, so that a Lorentz force F acts on the ion beam IB. It is deflected in the direction shown in FIG. This direction is applied to the subsequent semiconductor substrate W by tilting the angle θ with respect to the vertical line by the rotation of the deflector 14 (see FIG. 4C).
[0050]
Incidentally, it is necessary to confirm whether or not the irradiation angle θ of the ion beam IB adjusted by the above operation of the beam transport tube 21 matches the incident angle with respect to the semiconductor substrate W. Therefore, in the present embodiment, a step of measuring the incident angle of the ion beam IB with respect to the semiconductor substrate W is provided after the beam emitting surface 14a of the deflector 14 is inclined and before ion implantation into the semiconductor substrate W. ing.
[0051]
As a method for measuring the incident angle of the ion beam IB, a conventionally known beam measuring method can be used. As an example, the incident angle of the ion beam can be measured from the current value obtained by arranging the Faraday cup on the upper surface of the stage 7. This is based on the fact that the amount of ion beam entering the Faraday cup fluctuates corresponding to the beam incident angle. Based on the calibration curve prepared in advance, the beam incident angle is calculated from the detected current value. Identified.
[0052]
Subsequently, the stencil mask 9 disposed to face the semiconductor substrate W will be described. FIG. 9 schematically shows a process of implanting ions into the semiconductor substrate W through the stencil mask 9.
[0053]
The stencil mask 9 is made of, for example, silicon (Si), and has an opening 9a that defines an ion implantation region. In the present embodiment, ion implantation is performed on the semiconductor substrate W in units of one element (one chip). Accordingly, the stencil mask 9 has an opening 9a that defines an ion implantation region for one element. . The stencil mask 9 is electrostatically or mechanically held by the mask holder 10, and the relative position of the stencil mask 9 with respect to the semiconductor substrate W is determined by the movement of the mask holder 10.
[0054]
According to the present embodiment, since the ion implantation angle θ with respect to the semiconductor substrate W is controlled by inclining the beam emission surface 14a of the deflector 14, the stage for supporting the semiconductor substrate W as in the prior art. Thus, a desired ion implantation angle can be obtained without providing a tilting mechanism, and the structure of the stage can be simplified.
[0055]
In addition, since it is not necessary to provide an inclination mechanism in the mask holder 10 that holds the stencil mask 9, the configuration of the mask holder 10 can be simplified, and an advanced positioning mechanism for the stencil mask 9 with respect to the semiconductor substrate W is not required. It becomes.
[0056]
The ion beam IB is irradiated onto the surface of the semiconductor substrate W at an incident angle θ through the opening 9a of the stencil mask 9 as shown in FIG. At this time, depending on the magnitude of the incident angle θ, a deviation may occur between the target ion implantation region on the semiconductor substrate W and the projection position of the mask opening 9a. This deviation becomes a problem in the process. In such a case, ion implantation may be performed in the manner shown in FIGS. 10A and 10B.
[0057]
That is, as shown in FIG. 10A, the opening 9a of the stencil mask 9 is arranged in a position offset in advance by an amount of deviation to the opposite side of the deviation position with respect to the ion implantation region D of the semiconductor substrate W. For example, the displacement of the implantation position due to the ion implantation can be reduced. Further, as shown in FIG. 10B, by forming the side wall of the opening 9a of the stencil mask 9 on a tapered surface along the ion implantation direction, the deviation of the implantation position due to the ion implantation can be reduced.
[0058]
The embodiment of the present invention has been described above. Of course, the present invention is not limited to this, and various modifications can be made based on the technical idea of the present invention.
[0059]
For example, in the above embodiment, the step of inclining the beam exit surface 14a of the deflector 14 is performed after the parallel movement of the deflector 14. However, the turning operation of the deflector 14 is performed before the parallel movement of the deflector 14. Alternatively, it may be performed during translation.
[0060]
In the embodiment, the example in which ion implantation is performed on the semiconductor substrate W through the stencil mask 9 has been described. However, the present invention is not limited to this, and the case where ion implantation is performed through a resist mask formed on the semiconductor substrate. The present invention is also applicable. Moreover, although the semiconductor substrate W was used as a to-be-processed substrate, this invention is applicable also to the glass substrate etc. for liquid crystal display panels, for example.
[0061]
In the above-described embodiment, the example in which the link mechanism is employed for the actuators 40a and 40b constituting the rotation mechanism of the deflector 14 has been described. However, it is also possible to configure this by a hydraulic cylinder, for example.
[0062]
【The invention's effect】
As described above, according to the present invention, ion implantation is performed by tilting the beam exit surface of the deflector serving as the ion beam irradiation source with respect to the substrate to be processed, so that the substrate to be processed is supported. Inclined ion implantation can be performed without providing a tilting mechanism on the stage to be performed, and this makes it possible to greatly simplify the configuration of the stage as compared with the prior art.
[Brief description of the drawings]
FIG. 1 is a side view showing an entire ion implantation apparatus 1 according to an embodiment of the present invention.
2 is a plan view of the ion implantation apparatus 1. FIG.
FIG. 3 is a schematic configuration diagram of an ion implantation apparatus 1;
4 is a diagram showing a relationship between a deflector 14 and a semiconductor substrate W for explaining a beam irradiation angle setting step of the ion implantation apparatus 1; FIG.
5 is a plan view of the deflector 14. FIG.
FIGS. 6A and 6B are side views of the deflector 14, in which A indicates before rotation and B indicates after rotation.
7A and 7B are schematic views of a main part of an actuator that constitutes a rotation mechanism of the deflector 14. FIG. 7A shows a state before the rotation operation, and B shows a state after the rotation operation.
8 is a cross-sectional view schematically showing the internal structure of the deflector 14. FIG.
FIG. 9 is a side sectional view for explaining an ion implantation step into the semiconductor substrate W using the stencil mask 9;
10 is a side sectional view showing a modification of the configuration of the stencil mask 9. FIG.
FIG. 11 is a conceptual diagram for explaining a conventional ion implantation method.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Ion implantation apparatus 2 Ion source 3 Acceleration tube 8 Stage 9 Stencil mask 11 High voltage terminal 12 Mass separator 13 Beam converging device 14 Deflector 14a Beam exit surface 15 End station 17 Bellows piping 21 Beam transport tube 30 Electromagnet 31 Housing 32 Vacuum chamber 35a Rotating shaft 35b Rotating shaft 40a Actuator 40b Actuator M1-M3 Drive motor W Semiconductor substrate

Claims (15)

An ion source, a mass separation unit for mass separation by deflecting ions extracted from the ion source in a second direction that intersects a first direction that is the extraction direction of the ions, and an ion beam composed of mass-separated ions An ion implantation method using an ion implantation apparatus including a deflector that irradiates a substrate to be processed with a deflection in a third direction that intersects the first direction and the second direction, respectively ,
By rotating the deflector about the second direction, and wherein the step of tilting the beam exit surface of said deflector with respect to the substrate to be processed,
Ion implantation method and a step of injecting the ions from the beam exit surface to the substrate to be treated is irradiated with the ion beam. The ion implantation method according to claim 1,
An ion implantation method further comprising: converging the ion beam before deflecting the ion beam from the second direction to the third direction . The ion implantation method according to claim 2,
The ion implantation method further comprising the step of translating the deflector in the first direction . The ion implantation method according to claim 1,
An ion implantation method further comprising a step of measuring an incident angle of the ion beam with respect to the substrate to be processed before the step of implanting the ions. The ion implantation method according to claim 1,
The step of implanting ions includes an ion implantation method in which a mask member having an opening for defining an ion implantation region is disposed opposite to the surface of the substrate to be processed , and the ions are implanted . The ion implantation method according to claim 5,
The mask member is disposed at a position where the opening is offset from the ion implantation region. The ion implantation method according to claim 5,
An ion implantation method in which a side wall of the opening is a tapered surface along an ion implantation direction. A high voltage terminal having an ion source;
The ions extracted from the ion source are deflected in a second direction intersecting the first direction, which is the extraction direction of the ions, mass-separated , the ion beam is converged , and the ion beam is A beam transport that deflects in a direction and a third direction that respectively intersects the second direction ;
A stage that is disposed at a subsequent stage of the beam transport section and supports a substrate to be processed that is irradiated with an ion beam emitted from the beam transport section ;
A translation mechanism for moving the beam transport portion in parallel in the first direction ;
A rotation mechanism for inclining the beam exit surface of the beam transport section with respect to the upper surface of the stage;
An ion implantation apparatus comprising: The ion implantation apparatus according to claim 8,
An ion implanter further comprising a telescopic vacuum pipe connected between the high voltage terminal and the beam transport section. The ion implantation apparatus according to claim 8,
The beam transport unit includes a mass separator , a beam converging unit, and a beam deflector connected in series ,
The rotation mechanism, an ion implantation device for rotating the beam deflector to the upper surface of the mass separator and said beam said stage independently of the concentrator. The ion implantation apparatus according to claim 10,
The rotation mechanism has a rotation axis that is a rotation center of the beam deflector,
Interior of the rotary shaft, an ion implantation apparatus which constitutes a part of the beam transport path. The ion implantation apparatus according to claim 11,
The beam deflector is
Wherein comprises a housing defining a vacuum chamber therein is supported by a pivot shaft, and a pair of magnetic poles disposed opposite each other across the vacuum chamber,
The rotation mechanism, an ion implantation apparatus further comprising an actuator for pressing the housing around the rotating shaft. A mass separator that deflects ions extracted from an ion source in a second direction that intersects a first direction that is the extraction direction of the ions and performs mass separation ;
A beam concentrator connected to a subsequent stage of the mass separation unit for focusing the ion beam;
And which is connected downstream of the beam converging unit, a beam deflector for irradiating the ion beam in the first direction and the second direction and the third is deflected to the direction target substrate intersecting respectively,
A translation mechanism for translating the mass separator, the beam converging device and the beam deflector in the first direction ;
A rotating mechanism for rotating the beam deflector about said second direction
A beam transport tube for an ion implantation apparatus. A beam transport tube for an ion implanter according to claim 13,
The rotation mechanism has a rotation axis that is a rotation center of the beam deflector,
The inside of the rotation shaft constitutes a part of a beam transport path. A beam transport tube for an ion implantation apparatus. A beam transport tube for an ion implanter according to claim 14,
The beam deflector is
Wherein comprises a housing defining a vacuum chamber therein is supported by a pivot shaft, and a pair of magnetic poles disposed opposite each other across the vacuum chamber,
The said rotation mechanism further has an actuator which presses the said housing | casing around the said rotating shaft. The beam transport tube for ion implantation apparatuses.

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